WO2000065659A1

WO2000065659A1 - Production method for micro-machine

Info

Publication number: WO2000065659A1
Application number: PCT/JP2000/002739
Authority: WO
Inventors: Masayoshi Esashi; Takao Murakoshi; Shigeru Nakamura; Nobuo Takeda
Original assignee: Tokimec Inc.; Ball Semiconductor Limited
Priority date: 1999-04-27
Filing date: 2000-04-27
Publication date: 2000-11-02
Also published as: AU4142600A; CA2371669A1

Abstract

A method of producing a floating sphere type measuring device having a floatable sphere and electrodes surrounding the sphere, comprising the steps of forming a first sacrificing film on the surface of the sphere, forming electrode patterns consisting of a conductive film on the first sacrificing film, forming a second sacrificing film so as to cover the electrode patterns-formed first sacrificing film, forming groove patterns in the second sacrificing film to expose the electrode patterns, forming an insulating film for connection between a plurality of exposed electrode patterns, and removing the first and second sacrificing films.

Description

Specification

Manufacturing method of micromachine

〔Technical field〕

The present invention relates to a method for manufacturing a micromachine or a spherical sensor-type measuring device comprising a microspherical sensor portion and a peripheral portion or an surrounding electrode surrounding the microspherical sensor portion, and particularly to a microsphere having a diameter of several millimeters or less and a microsphere. The present invention relates to a method for manufacturing a micro electrode body.

(Background technology)

2. Description of the Related Art Conventionally, there has been known a method and an apparatus for detecting an external force, acceleration, and the like by floating a minute sphere electrostatically or magnetically so as not to come into contact with the surroundings and detecting displacement of the sphere. Such a device typically includes a microsphere, an electric or magnetic field generator for levitating the microsphere, and a pickup for detecting displacement of the sphere. In some cases, the levitated sphere is rotated at high speed. The electric or magnetic field generator and the displacement detection pickup typically have a plurality of electrodes, and these electrodes are arranged close to the microsphere.

Traditionally, microspheres and surrounding electrodes have been manufactured and assembled separately. Therefore, a suitable method for precisely manufacturing the microspheres and the surrounding electrodes simultaneously and placing them closely and accurately is unknown.

2. Description of the Related Art In the field of semiconductor device manufacturing, various methods and techniques for manufacturing a fine chip and forming a fine circuit pattern in a multilayered manner are known. These methods include, for example, lithography, etching, chemical vapor deposition (CVD), and electron beam exposure drawing. However, these methods can produce a flat substrate or chip, but cannot form a microsphere and a microelectrode arranged close to its periphery. Accordingly, an object of the present invention is to provide a method for accurately and easily manufacturing a microsphere and a microelectrode arranged in the vicinity of the microsphere.

An object of the present invention is to provide a method for manufacturing a microsphere and a microsphere surrounding the microsphere, and forming an electrode on the inner surface of the microsphere.

[Disclosure of the Invention]

In the method of manufacturing a micromachine comprising a sphere and a surrounding portion surrounding the sphere according to the present invention, a sacrificial film is formed so as to cover the sphere, and a structural film for forming a surrounding portion is formed on the sacrificial film. Forming a hole in the structural film to expose the sacrificial film; and removing the sacrificial film.

Therefore, the sphere and the electrode arranged close to it can be manufactured simultaneously and accurately. In particular, microspheres and microelectrodes can be manufactured simultaneously and precisely.

According to the present invention, in the method for manufacturing a micromachine, the sacrificial film includes a step of completely covering the entire surface of the sphere, and the sphere is removed by removing the sacrificial film. Completely separated from the head. Or forming a hole in the sacrificial film to expose the sphere, and forming the structural film so as to connect to the exposed sphere, and removing the sacrificial film. Thus, the sphere is supported by the support from the periphery. Alternatively, by partially removing the sacrificial film, the sphere is supported by columns from the peripheral portion.

According to the present invention, a method for manufacturing a sphere and an electrode body includes: a step of forming a sacrificial film on the surface of the sphere; a step of forming a plurality of electrode patterns made of a conductive film on the sacrificial film; Forming an insulating film so as to crosslink, and removing the sacrificial film. Including.

Further, in the method for manufacturing a sphere and an electrode body, the step of forming the insulating film includes: forming a second sacrificial film so as to cover the sacrificial film on which the electrode pattern is formed; Forming a groove pattern on the substrate to expose the electrode pattern, and forming an insulator film so as to connect the plurality of exposed electrode patterns, wherein the step of removing the sacrificial film includes: This includes removing the two sacrificial films.

In the method for producing a sphere and an electrode according to the present invention, the sphere is made of single crystal or polycrystalline gay. The first and second sacrificial films are gay silicon dioxide films. The conductor film is a polycrystalline gay film. The insulator film is a gay nitride film or a high-resistance polycrystalline gay film.

In the method for producing a sphere and an electrode body according to the present invention, the sacrificial film is formed so as to completely cover the entire surface of the sphere, and the sphere is removed by removing the sacrificial film. More complete separation.

A spherical sensor-type measuring device according to the present invention includes: a sphere functioning as a sensor; a peripheral portion having a spherical inner surface surrounding the sphere; and a plurality of electrode portions formed on the spherical inner surface.

[Brief description of drawings]

FIG. 1 is a sectional view showing the structure of a flying sphere type measuring apparatus according to the present invention. FIG. 2 is a diagram showing the appearance of a flying sphere type measuring apparatus according to the present invention. FIG. 3 is a view showing an electric circuit pattern of the flying sphere type measuring apparatus of the present invention.

FIG. 4 is an explanatory diagram for explaining a method of manufacturing the flying sphere type measuring device of the present invention. FIG. 5 is an explanatory diagram for explaining a method of manufacturing the flying sphere type measuring device of the present invention. FIG. 6 is an explanatory diagram for explaining a method of manufacturing a flying sphere measuring device of the present invention. FIG. 7 shows the configuration of the present invention. It is sectional drawing which shows the structure of a flying sphere type measuring device.

FIG. 8 is an explanatory diagram for explaining a method of manufacturing the non-floating sphere type measuring apparatus of the present invention in FIG.

[Best mode for carrying out the invention]

First, before describing the manufacturing method of the present invention, the structure of a flying sphere type measuring device manufactured by the manufacturing method of the present invention will be described with reference to FIGS. Accelerometers, gyroscopes, etc. are examples of flying sphere measuring devices. As shown in FIG. 1, the apparatus of this example includes a spherical mass 10 and a surrounding spherical casing 100 surrounding it. The outer diameter of the mass 10 is It is slightly smaller than the inner diameter of the spherical inner surface of 00. When the mass 10 is levitated by a suitable method, for example, an electrostatic or magnetic method, a gap 11 is formed around the mass 10. This gap 11 is a closed space and may be a vacuum, but may be filled with a suitable inert gas. The diameter of the mass 10 is less than a few millimeters, and the thickness of the gap 11 can be several micrometers.

On the spherical inner surface of the casing 100, there are six electrodes 101, 102, 103, 104, 105, 106 (in FIG. 1, electrodes 101, 106). 102, 105, and 106 are shown) and a shield electrode 107 arranged therebetween. The six electrodes 101 to 106 may be used for power supply and control, for example, and the shield electrode 107 may be used for grounding. The six electrodes 101 to 106 and the shield electrode 107 are separated from each other by narrow grooves, but are connected to each other by a bridge 130 provided on the outer surface thereof, It forms an integral structure.

These seven electrodes 101 to 106 and 107 are formed of a conductor, and the bridge 130 is formed of an insulator. Ke An insulating protective film 132 is formed on the outer surface of the substrate 100. Terminals 111 to 116 and 117 (see FIG. 2B) are connected to these electrodes 101 to L06 and 107, respectively. These terminals 11 1 to 1 16 and 1 17 will be described below.

This will be described with reference to FIG. As shown, it takes the origin 0 at the center of the mass portion 1 0, on a horizontal plane - X ₂ axis and - taking Y 2 axis. Take the axis Z i-Z, vertically. Figure 2 A is a diagram of the apparatus of the present embodiment as seen along the Y i axis Direction, Figure 2 B is a diagram viewed along the Z ₂ axial direction. Figure 1 shows a cross section taken along the vertical plane X-Z plane. FIG. 3 is an external view of the apparatus of this example.

The six electrodes 101 to 106 are circular as indicated by broken lines, and are each arranged along three orthogonal axes. The remaining part of the six electrodes 101 to 106 is a shield electrode 107.

Terminals 111 to 116 and 117 are arranged at positions corresponding to the electrodes 101 to 106 and 107, respectively, and each electrode and the corresponding terminal are electrically connected. From these terminals 11 1 to 1 16 and 1 17, circuit patterns 12 1 to 12 6 and 12 7 (FIG. 2B) extend.

As shown in FIG. 2B, the tips of the electric circuit patterns 121 to 126, 127 are concentrated on the lower side of the outer surface of the casing 100. The distal ends of the electrical circuit patterns 121 to 126, 127 are arranged along the same circle, for example, as shown in the figure. In this manner, the six electrodes 101 to 106 and the shield electrode 107 are connected to an external device (not shown) having electrode terminals similarly arranged along the same circle. be able to.

In this example, although not shown in detail, six electrodes 10 1 to 10

Each of 6 comprises a pair of electrode parts, and accordingly, the terminals 111 to 116 connected to the electrodes 101 to 106 each comprise a pair of terminals. Therefore, the circuit pattern extending from these terminals is Including two. The number of terminals 117 connected to the shield electrode 107 and the number of electric circuit patterns 127 extending therefrom are one each.

The manufacturing method according to the present invention will be described with reference to FIG. 4, FIG. 5, and FIG. First, as shown in FIG. 4A, a sphere 10 composed of a gay element S i, preferably a single-crystal gay element S i is prepared. This is 10 parts by mass. Next, as shown in FIG. 4 B, the first insulator film on the surface of a sphere 1 0, for example, a film 1 2 of silicon dioxide S i 0 _2. This may be done by chemical vapor deposition (CVD).

In the next step, an electrode pattern made of a conductor film is formed. First, as shown in FIG. 4C, a conductor film, for example, a polycrystalline silicon Si film 14 is formed on the entire surface so as to cover the first insulator film 12. Next, an electrode pattern groove 15 is formed in the polycrystalline silicon Si film 14 by etching. The electrode pattern grooves 15 are formed in six thin annular shapes corresponding to the shapes of the six electrodes 101 to 106. Thus, an electrode pattern is formed inside the six annular grooves.

A shield electrode pattern is formed on the outside.

It should be noted that various shapes other than the circular shape in this example can be considered as the electrode pattern. Further, the shield electrode pattern may have a shape other than this example.

Next, as shown in FIG. 5A, a second insulator film, that is, a film 16 of the _second gay silicon dioxide Sio ₂ is formed. This may be done by chemical vapor deposition (CVD). In this case silicon dioxide S i 0 ₂ is Ru is Takashi塡in Figure 4 C electrode Bata Ichinmizo 1 5 formed in step. Therefore, the first silicon dioxide film 12 and the second silicon dioxide film 16 are connected via the electrode pattern groove 15.

The first and second insulator films 12 and 16 made of silicon dioxide are called a dummy film or a sacrificial film because they are removed later.

In the next step, connect the electrode pattern and shield electrode pattern To form an insulator bridge. First, as shown in FIG. 5B, a bridge pattern groove 17 is formed in the second silicon dioxide film 16 by etching. An appropriate number of bridge pattern grooves 17 are provided on both sides of the electrode pattern groove 15 that forms the boundary between the six electrode patterns and the shield electrode pattern. The conductor film, that is, the film 14 of polycrystalline silicon S i is exposed in the portion of the groove 17.

Next, as shown in FIG. 5C, an insulating film, for example, a silicon nitride S

A film 18 of 13 N ₄ is formed. The gay nitride film 18 is formed along the electrode pattern groove 15 and so as to cover the bridge pattern groove 17 formed in the second silicon dioxide film 16. Thus, the exposed electrode pattern and the shield electrode pattern are connected by the silicon nitride Si ₃ N ₄ .

Next, as shown in FIG. 6A, the two sacrificial films, ie, the first and second silicon dioxide films 12, 16 are removed. Of course, the silicon dioxide filling the electrode pattern grooves 15 formed in the polycrystalline silicon film 14 is also removed. Thereby, the sphere 10 of single-crystal gayon is separated from the surrounding part, and a mass part 10 is formed.

Removal of silicon dioxide is achieved by using an appropriate solution that dissolves silicon dioxide but does not dissolve single crystal silicon spheres 10, polycrystalline silicon film 14, and silicon nitride film 18. . This solution first dissolves the second silicon dioxide film 16 and then dissolves the silicon dioxide filling the electrode pattern groove 15. Further, the first silicon dioxide film 12 is dissolved through the groove 15.

Next, a protective film made of an insulator film is formed. As shown in FIG. 6B, a third silicon dioxide film is formed so as to cover the entire casing 100.

Form 2 0. Similarly, this may be done by chemical vapor deposition (CVD). By forming the protective film in this way, the mass The gap 11 formed outside the portion 10 becomes a closed space. This closed space may be vacuum, as described above, but may be filled with a suitable inert gas. Further, a terminal pattern groove 21 is formed in the third silicon dioxide film 20. The terminal pattern grooves 21 are provided at positions corresponding to the six electrode patterns and the shield electrodes.

Finally, a wiring pattern made of a metal thin film is formed on the third silicon dioxide film 20. Thereby, the terminal 22 is formed as shown in FIG. 6C. The terminals 22 are formed so as to be connected to the six electrode patterns and the shield electrode pattern, respectively. Although not shown in FIG. 6C, an electric circuit pattern (see FIG. 2) extending from the terminal 22 is also formed.

Another example of the present invention will be described with reference to FIG. The device of the present example includes a spherical mass portion 10 and a surrounding spherical casing 100 surrounding the mass portion 10. The mass portion 10 is supported by a supporting column 110 to form a peripheral spherical casing. Supported by Thing 100. The support 1 110 is

Along the Z-axis, ie, at the south pole and the north pole. In the case of this example, there is no need to provide a device for generating an electrostatic force or a magnetic force or the like for levitating the mass unit 10 like the floating sphere type measuring device in the example of FIG.

With reference to FIG. 8, a method for manufacturing the device of FIG. 7 will be described. First, as shown in FIG. 8A, a sphere 10 made of a gay element S i, preferably a single crystal gay element S i is prepared. This is the mass 10. Next, as shown in FIG. 8 B, the first insulator film on the surface of a sphere 1 0, for example, a film 1 2 of silicon dioxide S i 0 _2. This may be done by chemical vapor deposition (CVD). Next, the first insulator film 1

2, a groove 13 is formed at a position where the column 11 is to be formed by etching, and the sphere 10 is exposed.

The following steps are the same as those in the method of manufacturing the device shown in FIG. Next step Then, an electrode pattern made of a conductor film is formed. First, as shown in FIG. 8C, a conductive film, for example, a polycrystalline silicon Si film 14 is formed on the entire surface so as to cover the first insulating film 12. In this step, the polycrystalline silicon Si is filled in the groove 13 of the first insulator film 12. The following is the same as the above-described manufacturing method.

Next, an electrode pattern groove 15 is formed in the polycrystalline silicon Si film 14 by etching. The electrode butter grooves 15 are formed in six thin annular shapes corresponding to the shapes of the six electrodes 101 to 106. Thus, an electrode pattern is formed inside the six annular grooves, and a shield electrode pattern is formed outside thereof.

Next, the method described with reference to FIGS. 5 and 6 holds as it is. As shown in FIG. 5 A, the second insulating film, i.e., the second layer 1 6 dioxide Geimoto S i 0 ₂ formed, as shown in FIG. 5 B, a second silicon dioxide film 1 A bridge pattern groove 17 is formed in 6. Next, as shown in FIG. 5C, an insulator film, for example, a silicon nitride Si ₃ N

A film 18 of ₄ is formed.

Next, as shown in FIG. 6A, the two sacrificial films, that is, the first and second silicon dioxide films 12, 16 are removed. As a result, the single crystal silicon sphere 10 is separated from the surrounding part except for the support pillar 110 to form a mass 10.

As shown in FIG. 6B, a third silicon dioxide film 20 is formed, and as shown in FIG. 6C, a wiring pattern made of a metal thin film is formed on the third silicon dioxide film 20. As a result, terminals 22 are formed.o

In the above example, the support 110 is a conductive film, that is, polycrystalline silicon.

It is formed in the step of forming the Si 14 film. Therefore, the support 110 is made of a conductor like the electrodes 101 to 106 and 107. However, the support 110 is replaced with a first insulator film, It may be formed by the element S i 0 2.

Although the embodiments of the present invention have been described in detail above, it is easy for those skilled in the art that the present invention is not limited to the above-described embodiments and can adopt various other configurations without departing from the gist of the present invention. Understand it.

ADVANTAGE OF THE INVENTION According to this invention, it has the advantage that a spherical body and its surrounding electrode can be manufactured simultaneously.

ADVANTAGE OF THE INVENTION According to this invention, it has the advantage that the clearance gap between a spherical body and the electrode of the periphery can be formed accurately and easily.

ADVANTAGE OF THE INVENTION According to this invention, although the size of a microsphere and the electrode around it is extremely small, it has the advantage that it can be manufactured accurately.

Claims

The scope of the claims

. Forming a sacrificial film to cover the sphere;

Forming a structural film for forming a peripheral portion on the sacrificial film;

Forming a hole in the structural film to expose the sacrificial film; removing the sacrificial film;

A method for manufacturing a micromachine comprising a sphere containing a sphere and a surrounding part surrounding the sphere.

2. The method for manufacturing a micromachine according to claim 1,

The sacrificial film is formed so as to completely cover the entire surface of the sphere,

And removing the sacrificial film so that the sphere is completely separated from the surrounding portion.

3. The method for manufacturing a micromachine according to claim 1,

Forming a hole in the sacrificial film to expose the sphere; forming the structural film to connect to the exposed sphere;

A method for manufacturing a micromachine, comprising: removing the sacrificial film, whereby the sphere is supported by a pillar from the peripheral portion.

4. The method for manufacturing a micromachine according to claim 1,

A method for manufacturing a micromachine, wherein the sphere is supported by a pillar from the periphery by partially removing the sacrificial film.

5. forming a sacrificial film on the surface of the sphere;

Forming a plurality of electrode patterns made of a conductor film on the sacrificial film; Forming an insulating film so as to bridge the electrode pattern, and removing the sacrificial film,

And a method for producing an electrode body.

6. The method for producing a sphere and an electrode according to claim 5,

The step of forming the insulating film includes:

Forming a second sacrificial film so as to cover the sacrificial film on which the electrode pattern is formed;

Forming a groove pattern in the second sacrificial film to expose the electrode butter;

Forming an insulator film so as to connect the plurality of exposed electrode patterns,

Including

The step of removing the sacrificial film includes removing the two sacrificial films.

A method for producing a sphere and an electrode body.

7. The method for producing a sphere and an electrode according to claim 5,

A method for producing a sphere and an electrode, wherein the sphere is made of a single crystal or polycrystalline gay.

8. The method for producing a sphere and an electrode according to claim 5,

The method for producing a sphere and an electrode, wherein the first and second sacrificial films are silicon dioxide films.

9. The method for producing a sphere and an electrode according to claim 5,

A method for producing a sphere and an electrode, wherein the conductive film is a polycrystalline gay film.

10. The method for manufacturing a sphere and an electrode according to claim 5, wherein the insulator film is a gay nitride film or a high-resistance polycrystalline GaN film.

1. The method for manufacturing a sphere and an electrode according to claim 5, wherein the sacrificial film is formed so as to completely cover the entire surface of the sphere.

A method for producing a sphere and an electrode, wherein the sphere is completely separated from the electrode by removing the sacrificial film.

2. A spherical sensor-type measuring device comprising: a sphere functioning as a sensor; a peripheral portion having a spherical inner surface surrounding the sphere; and a plurality of electrode portions formed on the spherical inner surface.