WO1998011764A1 - Radio frequency plasma generator - Google Patents
Radio frequency plasma generator Download PDFInfo
- Publication number
- WO1998011764A1 WO1998011764A1 PCT/GB1997/002144 GB9702144W WO9811764A1 WO 1998011764 A1 WO1998011764 A1 WO 1998011764A1 GB 9702144 W GB9702144 W GB 9702144W WO 9811764 A1 WO9811764 A1 WO 9811764A1
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- WO
- WIPO (PCT)
- Prior art keywords
- chamber
- plasma
- antenna
- plasma generator
- generator according
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
Definitions
- the present invention relates to plasma generators of the type in which electromagnetic energy is coupled inductively into a gaseous medium so as to excite the gaseous medium into a plasma state.
- Inductively-coupled plasma generators are well- known. See, for example GB 2 231 197; EP 0 217 361; EP 0 379 828; EP 0 689 226; US 4 948 458 and US 5 397 962.
- an object of the invention is to produce a plasma which is as uniform as possible over as large a diameter as practicable, in order to maximise the size of workpiece which can be exposed to the plasma.
- this is achieved by using an antenna in the form of a flat spiral, or involute.
- EP 0 379 428 and EP 0 689 226) this is achieved by the use of a multiplicity of antennas.
- insulating windows are required to enable the radio frequency electro-magnetic field to penetrate into the chamber in which the gaseous medium to be excited into the gaseous state is contained.
- these windows can provide a source of mechanical weakness, particularly when large flat antennas are used.
- the flat antenna configuration although simple, has another disadvantage in that it produces an electromagnetic field whose intensity falls off rapidly in the plane perpendicular to the antenna. Consequently, the plasma density perpendicular to the plane of the antennas also falls off rapidly.
- US Patent 5 309 063 shows an inductively coupled plasma generator including an antenna which has a flat spirally wound portion and a helical portion extending from the flat portion.
- the antenna is mounted m the centre of a cylindrical plasma generator chamber and projects into the chamber.
- the antenna is separated from the gaseous medium in the chamber by a cup-shaped window. It is claimed that this antenna configuration gives a radial plasma density profile which is flatter than that produced by a flat spiral antenna. However, no indication is given of the plasma density profile in the axial direction.
- an inductively-coupled radio frequency plasma generator including a chamber having means for admitting to the chamber a gaseous medium to be excited into a plasma state, and a source of r.f. power connected to an antenna mounted in an end wall of the chamber, characterised in that the antenna comprises an open-ended helical coil surrounded by a shroud made of an insulating material having a low radio- frequency absorption coefficient, and there is provided also a plurality of magnets so disposed about the periphery of the chamber so as to confine the plasma to the central region of the chamber.
- magnets disposed on the end wall of the chamber so as to prevent the charged species from the plasma impinging on the end wall of the chamber.
- Figure 1 is a schematic longitudinal section of one embodiment of the invention
- Figure 2 is a transverse cross-section of the embodiment of Figure 1 showing the disposition of plasma confining magnets in which the magnets are arranged in columns along the length of the source around the wall of a plasma chamber forming part of the embodiment of Figure 1
- Figure 3 is a schematic longitudinal section of a second embodiment of the invention m which the magnets are arranged in rings or columns oriented perpendicular to the axis of the source,
- Figure 4 is a schematic longitudinal section of a third embodiment of the invention.
- Figure 5 shows a plot of the normalised plasma current density across the plasma chamber of the embodiments of Figures 1 to 4.
- a plasma processing apparatus embodying the invention consists of a cylindrical or rectangular chamber 1 which has an upper end wall 2 and is closed at the lower end by a base plate 3. The junction between the chamber 1 and the base plate 3 is sealed by an '0' ring 3'. Mounted in the base plate 3 is a support 4 for a workpiece 5 to be processed by charged species derived from a plasma produced in a gaseous medium contained in the chamber 1. Mounted axially in the end wall 2 of the chamber 3 is an helical antenna 6. The antenna 6 is surrounded by a shroud 7 which is made of an insulating material which is transparent to radio- frequency radiation.
- Adjacent to the shroud 7 is an inlet 8 for the gaseous medium which is to be excited into the plasma state.
- An outlet 9 in the base plate 3 enables the chamber 1 to be evacuated by a vacuum system (not shown) prior to the admission of the gaseous medium to the chamber 1 and for a suitable pressure to be maintained dynamically in the chamber 1 during its operation.
- a vacuum system not shown
- magnets 10 Surrounding the cylindrical wall of the chamber 1 is a plurality of magnets 10 the poles of which are disposed as shown in Figure 2 or alternatively, as shown in Figure 3.
- Further magnets 11 are disposed on the outside of the end wall 2 of the chamber 1. The formation of the magnets 10 and 11 is to produce a magnetic field which both shapes and confines the plasma in the chamber. In particular, the magnets 11 prevent the drift of the plasma towards the end wall 2 of the chamber 1.
- the antenna 6 is connected to an r.f. power generator.
- the shroud 7 is closed by a membrane 12 so that in the event of the shroud 7 cracking, no air will enter the chamber 1.
- Electrical feed- throughs 13 enable the antenna 6 to be connected to an r.f. power generator 14 via a matching circuit 15.
- An electrical feed-through 16 in the base plate 3 enables the workpiece support 4 to be connected to a source 17 of ac bias potential via a capacitive coupling 18.
- the bias potential source 17 may operate at the same frequency as the power generator 14, but not necessarily so.
- Suitable materials for the chamber 1 are aluminium alloys, stainless steels, copper or ceramics, the material in any particular case being chosen to be compatible with the gaseous medium used to generate the plasma and the process to be carried out on the workpieces .
- the power generator 14 can operate at any frequency in the range 100 Khz - 100 MHz at kw power levels, although the standard industrial frequency of 13.5 MHz is preferred for reasons of convenience.
- the antenna 6 preferably is made of copper and may be hollow to enable a coolant to be circulated through it and is plated with silver or gold to reduce its power loss.
- suitable dimensions for the antenna 6 are : 60 mm diameter; 50 mm long and 6.5 turns, giving an inductance of about 2 ⁇ H .
- the chamber 1 may have any transverse dimension greater than about twice that of the antenna 6, although the effiency of plasma production decreases as the diameter or equivalent transverse dimension of the chamber 1 is increased. Thus a higher power will be needed to maintain a given on flux density. Eventually, more than one antenna 6, as in the larger prior art systems, will be required to distribute the r.f. power in the gaseous medium in the chamber.
- a suitable inside diameter for the chamber 1 is 350 mm, which permits a uniform plasma having a diameter in the range 200 to 250 mm to be generated.
- a suitable height for a chamber having a diameter of 350 mm is about 250 mm which allows sufficient drift space below the antenna 6 for a uniform plasma to be generated.
- the power input to the workpiece 5 is arranged to be less than that supplied to the antenna 6 so that the antenna 6 determines the ion flux density and the workpiece power supply determines the ion energy via the bias potential generated at the workpiece support 4 (typically 30 V to 100 V) .
- the source 17 of the bias potential is chosen to operate at the same frequency as the power supply to the antenna 6 it can be operated at other frequencies so as to reduce electrical interference between the power supplies, or to optimise the processing of the workpiece 4.
- Figure 4 shows schematically, a second embodiment of the invention which is adapted to function as an ion gun or ion beam generator. Those components which are common to both embodiments have the same reference numerals.
- the orientation of the magnets in this embodiment can be either longitudinal, as . n Figure 1, or perpendicular to the axis, as in Figure 3.
- the upper part of the plasma generator is the same as m the first embodiment of the invention, but the base plate 3 and its associated items are replaced by a series of on extraction elements 31 which in use are maintained at a potential appropriate to the ions which it is desired to extract from the plasma within the chamber 1.
- the gaseous medium is chosen according to the purpose to which the plasma generator is to be put.
- the gaseous medium is chosen according to the purpose to which the plasma generator is to be put.
- hydrogen, chlorine or chlorinated or fluo ⁇ na ed hydrocarbon compounds such as carbon tetrachloride, or carbon tetra fluoride or hydrogen bromide can be used.
- any appropriate gaseous molecule can be used.
- the most usual gases are hydrogen, nitrogen, helium, neon or argon.
- boron hexahydride, boron tetrafluoride or arsenic trihydride can be used.
- ion fluxes in the range 1 to 100 mA cm are generated in both embodiments of the invention.
- Figure 5 shows a normalised plot of the plasma current density against the normalised distance from the longitudinal axis of the plasma chamber 1.
- Comparison with Figure 4 of US patent specification 5,309,063 shows how highly effective is the configuration of the antenna and confirming magnetic field of the present invention.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A radio frequency plasma generator including an antenna in the form of a helical coil positioned within a chamber and a system of magnets disposed about the side and end wall of the chamber so as to confine the plasma to the central region of the chamber.
Description
Radio Frequency Plasma Generator
The present invention relates to plasma generators of the type in which electromagnetic energy is coupled inductively into a gaseous medium so as to excite the gaseous medium into a plasma state.
Inductively-coupled plasma generators are well- known. See, for example GB 2 231 197; EP 0 217 361; EP 0 379 828; EP 0 689 226; US 4 948 458 and US 5 397 962. In all the above specifications, an object of the invention is to produce a plasma which is as uniform as possible over as large a diameter as practicable, in order to maximise the size of workpiece which can be exposed to the plasma. In some cases (GB 2 231 197; EP 0 379 878 and US 4 948 458) this is achieved by using an antenna in the form of a flat spiral, or involute. In others (EP 0 379 428 and EP 0 689 226) this is achieved by the use of a multiplicity of antennas.
The above types of plasma generators have their disadvantages, for example, in the case of those designs which use external antennas, insulating windows are required to enable the radio frequency electro-magnetic field to penetrate into the chamber in which the gaseous medium to be excited into the gaseous state is contained. As most suitable materials are brittle, these windows can provide a source of mechanical weakness, particularly when large flat antennas are used. The flat antenna configuration although simple, has another disadvantage in that it produces an electromagnetic field whose intensity falls off rapidly in the plane perpendicular to the antenna. Consequently, the plasma density perpendicular to the plane of the antennas also falls off rapidly.
US Patent 5 309 063 shows an inductively coupled plasma generator including an antenna which has a flat spirally wound portion and a helical portion extending from the flat portion. The antenna is mounted m the centre of a cylindrical plasma generator chamber and projects into the chamber. The antenna is separated from the gaseous medium in the chamber by a cup-shaped window. It is claimed that this antenna configuration gives a radial plasma density profile which is flatter than that produced by a flat spiral antenna. However, no indication is given of the plasma density profile in the axial direction.
According to the present invention there is provided an inductively-coupled radio frequency plasma generator including a chamber having means for admitting to the chamber a gaseous medium to be excited into a plasma state, and a source of r.f. power connected to an antenna mounted in an end wall of the chamber, characterised in that the antenna comprises an open-ended helical coil surrounded by a shroud made of an insulating material having a low radio- frequency absorption coefficient, and there is provided also a plurality of magnets so disposed about the periphery of the chamber so as to confine the plasma to the central region of the chamber.
Preferably there are included magnets disposed on the end wall of the chamber so as to prevent the charged species from the plasma impinging on the end wall of the chamber.
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
Figure 1 is a schematic longitudinal section of one embodiment of the invention,
Figure 2 is a transverse cross-section of the embodiment of Figure 1 showing the disposition of plasma confining magnets in which the magnets are arranged in columns along the length of the source around the wall of a plasma chamber forming part of the embodiment of Figure 1, Figure 3 is a schematic longitudinal section of a second embodiment of the invention m which the magnets are arranged in rings or columns oriented perpendicular to the axis of the source,
Figure 4 is a schematic longitudinal section of a third embodiment of the invention, and
Figure 5 shows a plot of the normalised plasma current density across the plasma chamber of the embodiments of Figures 1 to 4.
Referring to Figure 1, a plasma processing apparatus embodying the invention consists of a cylindrical or rectangular chamber 1 which has an upper end wall 2 and is closed at the lower end by a base plate 3. The junction between the chamber 1 and the base plate 3 is sealed by an '0' ring 3'. Mounted in the base plate 3 is a support 4 for a workpiece 5 to be processed by charged species derived from a plasma produced in a gaseous medium contained in the chamber 1. Mounted axially in the end wall 2 of the chamber 3 is an helical antenna 6. The antenna 6 is surrounded by a shroud 7 which is made of an insulating material which is transparent to radio- frequency radiation. Adjacent to the shroud 7 is an inlet 8 for the gaseous medium which is to be excited into the plasma state. An outlet 9 in the base plate 3 enables the chamber 1 to be evacuated by a vacuum system
(not shown) prior to the admission of the gaseous medium to the chamber 1 and for a suitable pressure to be maintained dynamically in the chamber 1 during its operation. Surrounding the cylindrical wall of the chamber 1 is a plurality of magnets 10 the poles of which are disposed as shown in Figure 2 or alternatively, as shown in Figure 3. Further magnets 11 are disposed on the outside of the end wall 2 of the chamber 1. The formation of the magnets 10 and 11 is to produce a magnetic field which both shapes and confines the plasma in the chamber. In particular, the magnets 11 prevent the drift of the plasma towards the end wall 2 of the chamber 1.
The antenna 6 is connected to an r.f. power generator.
The shroud 7 is closed by a membrane 12 so that in the event of the shroud 7 cracking, no air will enter the chamber 1. Electrical feed- throughs 13 enable the antenna 6 to be connected to an r.f. power generator 14 via a matching circuit 15. An electrical feed-through 16 in the base plate 3 enables the workpiece support 4 to be connected to a source 17 of ac bias potential via a capacitive coupling 18. The bias potential source 17 may operate at the same frequency as the power generator 14, but not necessarily so.
Suitable materials for the chamber 1 are aluminium alloys, stainless steels, copper or ceramics, the material in any particular case being chosen to be compatible with the gaseous medium used to generate the plasma and the process to be carried out on the workpieces .
In principle, the power generator 14 can operate at any frequency in the range 100 Khz - 100 MHz at kw power levels, although the standard industrial frequency of 13.5 MHz is preferred for reasons of convenience.
The antenna 6 preferably is made of copper and may be hollow to enable a coolant to be circulated through it and is plated with silver or gold to reduce its power loss. For use with a power generator 14 operating at the standard industrial frequency of 13.56 MHz, suitable dimensions for the antenna 6 are : 60 mm diameter; 50 mm long and 6.5 turns, giving an inductance of about 2 μH .
The chamber 1 may have any transverse dimension greater than about twice that of the antenna 6, although the effiency of plasma production decreases as the diameter or equivalent transverse dimension of the chamber 1 is increased. Thus a higher power will be needed to maintain a given on flux density. Eventually, more than one antenna 6, as in the larger prior art systems, will be required to distribute the r.f. power in the gaseous medium in the chamber. For the antenna size quoted, a suitable inside diameter for the chamber 1 is 350 mm, which permits a uniform plasma having a diameter in the range 200 to 250 mm to be generated. A suitable height for a chamber having a diameter of 350 mm is about 250 mm which allows sufficient drift space below the antenna 6 for a uniform plasma to be generated.
The power input to the workpiece 5 is arranged to be less than that supplied to the antenna 6 so that the antenna 6 determines the ion flux density and the workpiece power supply determines the ion energy via the bias potential generated at the workpiece support 4 (typically 30 V to 100 V) . Although usually the source
17 of the bias potential is chosen to operate at the same frequency as the power supply to the antenna 6 it can be operated at other frequencies so as to reduce electrical interference between the power supplies, or to optimise the processing of the workpiece 4.
Figure 4 shows schematically, a second embodiment of the invention which is adapted to function as an ion gun or ion beam generator. Those components which are common to both embodiments have the same reference numerals.
The orientation of the magnets in this embodiment can be either longitudinal, as . n Figure 1, or perpendicular to the axis, as in Figure 3.
Referring to Figure 4, the upper part of the plasma generator is the same as m the first embodiment of the invention, but the base plate 3 and its associated items are replaced by a series of on extraction elements 31 which in use are maintained at a potential appropriate to the ions which it is desired to extract from the plasma within the chamber 1.
The gaseous medium is chosen according to the purpose to which the plasma generator is to be put. For example, in the case of the plasma processing apparatus of Figure 1 or Figure 3, if the apparatus is to be used for plasma etching, hydrogen, chlorine or chlorinated or fluoπna ed hydrocarbon compounds such as carbon tetrachloride, or carbon tetra fluoride or hydrogen bromide can be used.
In the case of the ion source of Figure 4, any appropriate gaseous molecule can be used. In addition to those described above for etching, the most usual gases are hydrogen, nitrogen, helium, neon or argon. For ion implantation into a workpiece consisting of a semi
conductor substrate, boron hexahydride, boron tetrafluoride or arsenic trihydride can be used.
-4
When operated at gas pressures in the range 10 to
-2 -2 10 mb, ion fluxes in the range 1 to 100 mA cm are generated in both embodiments of the invention.
Figure 5 shows a normalised plot of the plasma current density against the normalised distance from the longitudinal axis of the plasma chamber 1. Comparison with Figure 4 of US patent specification 5,309,063 shows how highly effective is the configuration of the antenna and confirming magnetic field of the present invention.
Claims
1. An inductively-coupled radio frequency plasma generator including a chamber having means for admitting to the chamber a gaseous medium to be excited into a plasma state, and a source of r.f. power connected to an antenna mounted in an end wall of the chamber, characterised in that the antenna comprises an open-ended helical coil (6) surrounded by a shroud (7) made of an insulating material having a low radio-frequency absorption coefficient, and there is provided also a plurality of magnets (10, 11) so disposed about the periphery of the chamber (1) so as to confine the plasma to the central region of the chamber (1).
2. A plasma generator according to claim 1 characterised in that there is included a plurality of magnets (11) so disposed on or close to the end wall of the chamber (1) as to oppose movement of charged species from the plasma towards the end wall of the chamber (1).
3. A plasma generator according to claim 1 or claim 2 characterised in that the ratio between the diameters of the chamber (1) and the antenna (6) has a maximum value of approximately 6:1.
4. A plasma generator according to any of claims 1 to 3 characterised in that the chamber (1) has an internal diameter of about 350 mm.
5. A plasma generator according to claim 3 or claim 4 characterised in that the antenna (6) has a diameter of 60 mm.
6. A plasma generator according to any preceding claim characterised in that the source (14) of a.c. power connected to the antenna is adapted to operate at a frequency in the range 100 Hz to 100 Mhz.
7. A plasma generator according to claim 6 characterised in that the source (14) of ac power is adapted to operate at a frequency of 13.56 Mhz.
8. A plasma generator according to claim 7 characterised in that the antenna (6) comprises a helical coil having a diameter of 60 mm, a length of 50 mm, 6.5 turns and an inductance of about 2 μH.
9. A plasma processing apparatus characterised in that there is included a plasma generator (1, 6, 7, 14, 10, 11) according to any preceding claim in association with a workpiece support (4) at the opposite end of the chamber (1) to the antenna and means (17, 18) for applying an ac bias potential to a workpiece (5) situated on the workpiece support (4).
10. A plasma processing apparatus according to claim 9 characterised m that the means (17, 18) for applying an ac bias potential to a workpiece (5) situated on the workpiece support (4) is adapted to produce an ac bias potential in the range 30 V to 100 V.
11. A plasma processing apparatus according to claim 9 or claim 10 characterised in that the means (17, 18) for applying an ac potential to a workpiece (5) on the workpiece support (4) is adapted to operate at the same frequency as the source (14) of ac power connected to the antenna ( 16) .
12. A method of operating a plasr~a processing apparatus according to any of claims 9 to 11 characterised m that the gaseous medium admitted to the chamber (1) is hydrogen, chlorine, a chlorinated or fluorinated hydrocarbon or hydrogen bromide.
13. A method according to claim 12 characterised in that the chlorinated or fluorinated hydrocarbon is carbon tetrachloride, or carbon tetrafluoride.
14. A method of operating a plasma processing apparatus according to any of claims 9 to 11 characterised in that the gaseous medium admitted to the chamber (1) is boron hexahycloride, boron tetraf luoride or arsenic trihydride.
15. An ion beam generator characterised in that there is included a plasma generator (1, 6, 7, 10, 11) according to any of claims 1 to 8 in association with at least one ion extraction electrode (31) situated at the opposite end of the chamber (1) to the antenna (6) .
16. An ion beam generator according to claim 15 characterised in that there is included at least one ion beam shaping and accelerating electrode (31).
17. A method of operating an ion beam generator according to claim 15 or claim 16 characterised in that the gaseous medium admitted to the chamber (1) is hydrogen, nitrogen, helium, neon or argon.
18. A method of operating an apparatus including a plasma generator according to any of claims 1 to 8 characterised in that the gaseous medium in the chamber
-4
(1) is maintained at a pressure in the range 10 mb to
-2
10 mbar .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU38573/97A AU3857397A (en) | 1996-09-13 | 1997-08-08 | Radio frequency plasma generator |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9619141.6 | 1996-09-13 | ||
| GB9619141A GB2317265A (en) | 1996-09-13 | 1996-09-13 | Radio frequency plasma generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1998011764A1 true WO1998011764A1 (en) | 1998-03-19 |
Family
ID=10799881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB1997/002144 WO1998011764A1 (en) | 1996-09-13 | 1997-08-08 | Radio frequency plasma generator |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU3857397A (en) |
| GB (1) | GB2317265A (en) |
| WO (1) | WO1998011764A1 (en) |
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|---|---|---|---|---|
| US7943204B2 (en) | 2005-08-30 | 2011-05-17 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| US8062965B2 (en) | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8138071B2 (en) | 2009-10-27 | 2012-03-20 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8779383B2 (en) | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| US9012874B2 (en) | 2010-02-26 | 2015-04-21 | Entegris, Inc. | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
| US9205392B2 (en) | 2010-08-30 | 2015-12-08 | Entegris, Inc. | Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates |
| US9938156B2 (en) | 2011-10-10 | 2018-04-10 | Entegris, Inc. | B2F4 manufacturing process |
| US9960042B2 (en) | 2012-02-14 | 2018-05-01 | Entegris Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| US10497569B2 (en) | 2009-07-23 | 2019-12-03 | Entegris, Inc. | Carbon materials for carbon implantation |
| US11062906B2 (en) | 2013-08-16 | 2021-07-13 | Entegris, Inc. | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| TWI801963B (en) * | 2020-09-11 | 2023-05-11 | 日商國際電氣股份有限公司 | Substrate processing apparatus, semiconductor device manufacturing method, and plasma generating apparatus |
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| US7454974B2 (en) | 2006-09-29 | 2008-11-25 | General Electric Company | Probe system, ultrasound system and method of generating ultrasound |
| US7605595B2 (en) * | 2006-09-29 | 2009-10-20 | General Electric Company | System for clearance measurement and method of operating the same |
| EP2068304A1 (en) * | 2007-12-05 | 2009-06-10 | General Electric Company | Probe system, ultrasound system and method of generating ultrasound |
| CN106025546B (en) * | 2016-05-25 | 2019-03-08 | 哈尔滨工业大学 | The device of using plasma modulation enhancing miniaturization omni-directional antenna electromagnetic radiation |
| WO2023047497A1 (en) * | 2021-09-22 | 2023-03-30 | 株式会社Kokusai Electric | Substrate processing device, plasma generation device, method for manufacturing semiconductor device, and program |
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-
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- 1996-09-13 GB GB9619141A patent/GB2317265A/en not_active Withdrawn
-
1997
- 1997-08-08 AU AU38573/97A patent/AU3857397A/en not_active Abandoned
- 1997-08-08 WO PCT/GB1997/002144 patent/WO1998011764A1/en active Application Filing
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| DATABASE WPI Section Ch Week 8725, Derwent World Patents Index; Class G08, AN 87-173041, XP002043697 * |
| PATENT ABSTRACTS OF JAPAN vol. 010, no. 329 (E - 452) 8 November 1986 (1986-11-08) * |
| PATENT ABSTRACTS OF JAPAN vol. 012, no. 252 (C - 512) 15 July 1988 (1988-07-15) * |
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| US8389068B2 (en) | 2005-08-30 | 2013-03-05 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| US7943204B2 (en) | 2005-08-30 | 2011-05-17 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| US10497569B2 (en) | 2009-07-23 | 2019-12-03 | Entegris, Inc. | Carbon materials for carbon implantation |
| US8062965B2 (en) | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8138071B2 (en) | 2009-10-27 | 2012-03-20 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
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| US9142387B2 (en) | 2009-10-27 | 2015-09-22 | Entegris, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US9685304B2 (en) | 2009-10-27 | 2017-06-20 | Entegris, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8779383B2 (en) | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| US9171725B2 (en) | 2010-02-26 | 2015-10-27 | Entegris, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| US9754786B2 (en) | 2010-02-26 | 2017-09-05 | Entegris, Inc. | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
| US9012874B2 (en) | 2010-02-26 | 2015-04-21 | Entegris, Inc. | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
| US9205392B2 (en) | 2010-08-30 | 2015-12-08 | Entegris, Inc. | Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates |
| US9764298B2 (en) | 2010-08-30 | 2017-09-19 | Entegris, Inc. | Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates |
| US9938156B2 (en) | 2011-10-10 | 2018-04-10 | Entegris, Inc. | B2F4 manufacturing process |
| US9960042B2 (en) | 2012-02-14 | 2018-05-01 | Entegris Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| US10354877B2 (en) | 2012-02-14 | 2019-07-16 | Entegris, Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| US11062906B2 (en) | 2013-08-16 | 2021-07-13 | Entegris, Inc. | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| TWI801963B (en) * | 2020-09-11 | 2023-05-11 | 日商國際電氣股份有限公司 | Substrate processing apparatus, semiconductor device manufacturing method, and plasma generating apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| AU3857397A (en) | 1998-04-02 |
| GB2317265A (en) | 1998-03-18 |
| GB9619141D0 (en) | 1996-10-23 |
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