WO1993015878A1

WO1993015878A1 - Abrading device and abrading method employing the same

Info

Publication number: WO1993015878A1
Application number: PCT/JP1993/000173
Authority: WO
Inventors: Toshiyasu Beppu; Junji Watanabb
Original assignee: Sumitomo Metal Industries Limited
Priority date: 1992-02-12
Filing date: 1993-02-12
Publication date: 1993-08-19
Also published as: EP0607441A1; EP0607441B1; EP0607441A4; DE69322491T2; DE69322491D1

Abstract

A device for abrading a large-scale flat substrate such as a silicon wafer, a quartz substrate, a glass substrate, and a metallic substrate. A sample (B) is abraded and worked by means of an abrading surface plate (1) while it is fixed by means of a vacuum chuck (4) on a sample holding table (3) with an abrasive (8) being supplied from an abrasive supplying nozzle (7). An elastic body (201) is secured to the underside of the abrading surface plate (1), and an abrasive cloth (2) is then secured to the underside of the elastic body. Since a hard type of abrasive cloth (2) is used, micro recessed and raised portions of the sample (B) can be worked to become smooth, and the elastic body (201) acts to realize uniform working.

Description

Akira

Polishing apparatus and polishing method using the same

ι £ art field

The present invention relates to a polishing apparatus fi for polishing a large-sized flat substrate, particularly a silicon wafer, a quartz substrate, a glass substrate, a ceramic substrate, a metal substrate, a wafer during an LSI manufacturing process, and the like. Background art

FIG. 1 is a perspective view of a conventional polishing apparatus for polishing a large flat substrate. In the figure, reference numeral 1 denotes a circular polishing table, which can be rotated horizontally by a rotary spindle 6. A polishing cloth 2, which is a nonwoven cloth of polyurethane or the like, is adhered to the surface with an adhesive 21. Above the polishing cloth 2, a disk-shaped sample holder 3 smaller than 1 is arranged at a position arrested and separated from the polishing cloth 2 IS. Horizontal rotation and horizontal movement are enabled by the holding table rotating shaft 5.

Further, a polishing agent supply nozzle 7 for spraying a polishing agent 8 is fixed to the side of the sample holder 3 and above the polishing table 1. The sample B is held on the lower surface of the sample holding table 3 by bonding or a vacuum chuck, and the sample B is pressed onto the polishing pad 2 with a polishing load W. Rotate the polishing table 1 and horizontally rotate and horizontally move the sample holder 3 to polish the surface of the sample B while applying the polishing agent 8 from the polishing agent supply nozzle 7 onto the polishing cloth 2.

When the sample is polished by the above-described polishing apparatus, the polishing cloth 2 is a non-woven fabric such as polyurethane and has a low elastic modulus and is easily deformed by pressure, so that the surface of the polishing cloth 2 becomes uneven. . Therefore, an attempt was made to easily attach a sheet having a thickness of approximately 0.51 DIB to the polishing pad 2 and the polishing pad 1 to increase the flatness of the polishing pad surface, but the polishing pad 2 was not uniform in thickness. Adhesive 21 Because the thickness is not uniform, the surface of the polishing cloth This condition was not effective because the contact state became locally uneven and the flatness of the polished surface was reduced.

In addition, since the entire polishing surface of the specimen is in contact with the polishing cloth surface, the peripheral portion of the sample is more easily polished than the inner peripheral portion, and there is a problem that the sample polishing surface is not uniformly polished. When the load W applied to the sample B is increased to make the contact state between the polishing cloth surface and the sample polishing surface uniform, scratches (scratches) are introduced on the polishing surface and polishing distortion occurs. Therefore, there was a problem that the original physical properties of the sample were lost.

Also, when a wiring pattern is formed on a wafer substrate during the LSI manufacturing process, and an insulating film is deposited over the entire surface of the wiring pattern, the presence or absence of the wiring pattern will result in an unexpected problem! ! Irregularities occur on the surface. When polishing the insulation of such a wafer, it is necessary to perform the polishing so that the thickness of the starting film is uniform on a macro scale and the surface is flat on a micro scale. is there. However, when a conventional polishing apparatus uses a soft polishing cloth, the polishing cloth follows the uneven surface of the insulating film due to the elastic deformation of the polishing cloth, and polishes not only the convex portions but also the concave portions. No. 2 is a schematic cross-sectional view showing the state SS of contact between a soft polishing cloth and a wafer. Wires 84, 84... Are formed on the wafer substrate 81, and a wire film 83 is formed thereon. When such a wafer surface is polished, the soft polishing pad 82 contacts and polishes a concave portion of the wafer surface due to its elastic deformation. For this reason, it took time to become flat (the difference in the height of the unevenness was zero), and it was necessary to make the thickness of the insulating film larger than usual. However, in practice, there is a limit to increasing the thickness of the insulating film, and the insulating film cannot be completely flattened, and there is a problem that the flatness is low in microscopic view.

Therefore, it is conceivable to use an extremely hard polishing cloth instead of a soft polishing cloth. Figure 3 shows the connection between the extremely hard polishing cloth and the wafer. FIG. 8 is a schematic cross-sectional view showing (Tactile). Wiring (not shown) is formed on the wafer substrate 81, and the wiring is formed on the wafer substrate 81. When such a wafer surface is polished, the extremely hard polishing cloth 82 has a high elastic modulus, so that it comes into contact with a convex portion of the wafer surface viewed in terms of σ regardless of the flatness of the wafer surface, Polish only the contact area. For this reason, there is a problem that the insulating film 83 is not polished to a uniform thickness like a matrix.

One object of the present invention is to level the contact streaks between the polishing cloth surface and the material polishing surface, to improve the uniform polishing and flatness of the material, and to reduce the load applied to the sample. It is an object of the present invention to provide a polishing apparatus which improves the smoothness of the polishing and reduces polishing distortion, and a polishing method using the same.

Another object of the present invention is to provide a polishing apparatus g which performs uniform polishing according to the shape of the material surface in terms of the mask α, and improves the flatness in terms of the microstructure, and a polishing method using the same. is there. Disclosure of the invention

In one polishing apparatus of the present invention and a polishing method using the same, an elastic portion is easily interposed between a polishing platen and a polishing cloth. Since the ring-shaped elastic body is interposed as the elastic part, the polishing cloth surface comes into contact in a narrow area of the sample polishing surface, so that the streak between the polishing cloth surface and the sample polishing surface becomes uniform, and the polishing cloth The surface is polished without applying extra load to the sample periphery. In another polishing apparatus of the present invention and a polishing method using the same, a disc-shaped elastic body is interposed in place of a disc-shaped elastic body, and thus a disc-shaped elastic body is interposed. Since the central part of the sample comes in contact with the polishing surface, the polishing cloth surface does not apply extra load to the periphery of the sample. Therefore, the concept of contact with the polished surface is uniform.

The other polishing apparatus of the present invention and the polishing method using the The fluid-filled part filled with a diamond is interposed between the circle-shaped polishing adjustment and the polishing cloth attached to the glare polishing platen, so that the shape of the fluid-filled part is spherical. The polishing cloth faces only the central part of the polishing cloth surface and is in contact with the sample polishing surface, so that the polishing cloth surface does not apply an extra load to the periphery of the sample. Therefore, the “contact state with the polishing surface” is uniform. Further, since the pressure of the fluid in the pre-E fluid sealing portion can be controlled, the polishing can be performed with a contact shape suitable for the sample.

In another polishing apparatus fi of the present invention and a polishing method using the same, a sample contacting surface of a polishing cloth has a second elastic body in which resin pellets and / or abrasive particles are embedded or attached. Since the surface of the polishing cloth is deformed in accordance with the flatness of the sample, the surface of the sample is polished uniformly, and the flatness of the sample is polished to improve the flatness.

According to another polishing apparatus of the present invention and a polishing method using the same, the surface of the polishing cloth has a convex portion, a concave portion, or a groove portion provided on the second elastic body. Deforms according to the specimen's natural flatness, and selectively polishes the material's π-like protrusions.

According to another polishing apparatus of the present invention and a polishing method using the same, a resin pellet and / or abrasive particles are embedded in a second elastic body in which a material contact surface of a polishing cloth is interposed with the elastic portion. Or the second elastic body is provided with protrusions, depressions or grooves, so that the contact between the polishing surface of the sample and the polishing cloth is uniform, and the surface of the sample is reduced in terms of Mac α. The polishing is performed uniformly, and the protrusions are selectively polished microscopically to improve the flatness. Simple sharps of the drawing

10 is a perspective view showing the structure of a conventional polishing apparatus S, FIG. 2 is a schematic cross section showing a part of the conventional polishing apparatus, and FIG. FIG. 40 is a partial sectional front view showing a polishing apparatus according to a first embodiment of the present invention, FIG. 40 is a schematic sectional view showing a part of a polishing sample, FIG. Is a partial cross-sectional front view showing a polishing apparatus according to a second embodiment of the invention, FIG. 7 is a partial cross-sectional front view showing a polishing apparatus g according to a third embodiment of the invention, and FIG. 8 is a fourth embodiment of the present invention. FIG. 9 is a schematic cross-sectional view showing a part of a polishing apparatus of an example, FIG. 9 is a schematic cross-sectional view showing a part of a polishing apparatus IB of a fifth embodiment of the present invention, and FIG. 10 is a polishing apparatus of a fourth embodiment. It is the graph which measured the level difference of the sample surface every time polishing was performed. BEST MODE FOR CARRYING OUT THE INVENTION

(First embodiment)

Hereinafter, the present invention will be specifically described with reference to the drawings showing a first embodiment. No. 40 is a partial sectional front view showing a polishing apparatus S of the present invention.

In the EI, 1 is a flat polishing table, and 3 is a disk-shaped sample holder. The polishing platen 1 has its upper surface center connected to the lower part of the rotary spindle 6 so that it can be rotated horizontally.

Below the polishing table 1, a sample holder 3 mounted on a spindle 55 capable of horizontal rotation and horizontal movement is provided. The spindle 55 is arranged at a position that is stiff with the polishing platen 1. The center of rotation of the spindle 55 is from the peripheral part of the polishing cloth 2 by the approximate radius of the sample B in the direction in which it sculpts from the center of the polishing plate 1. Can move horizontally.

A concentric peripheral groove is formed on the lower surface of the polishing table 1. An elastic body 201 in the form of a rosary plate thicker than its depth is fitted into this circumferential groove, and has a shape protruding from the polishing platen 1. A step is formed on the lower surface of the polishing outer periphery, and a fixing ring 102 is fitted. The polishing cloth 2 has its peripheral part sandwiched by fixing rings 102, 103, 103,..., And its central part is attached to the lower surface of the elastic body 201. Polishing fixed Are fixed by rings 102, 103 and bolts 104, 104,... Through which the polishing table 1 is inserted, and the tension of the polishing cloth 2 can be adjusted by the bolts 104, 104,.

A central portion of the polishing cloth 2 is fixed to the polishing set 1 by a fixing pin 101 having a thickness smaller than the thickness of the elastic body 201 protruding from the polishing platen, thereby forming a recess. Near the center of the polishing cloth 2, an abrasive supply nozzle 7 for ejecting an abrasive 8 is arranged.

Hereinafter, one example of specific conditions for performing polishing using this apparatus S will be described.

A large-diameter silicon wafer with a diameter of 8 inches was fixed as a sample B on a sample holder 3 by a vacuum chuck 4. Chloroprene rubber was used for the elastic body 201 (thickness approximately 15 aim to 20 ma, H, = 65, tensile strength 80 kgZcm). ² ) For the polishing cloth 2, a mixture of polyurethane resin and fiber is used, and the tension is adjusted so that the elastic body 201 is deformed by about 0.1 mm. First, an abrasive 8 in which Si 0 and ultrafine particles (average particle size from 0.1 in to 0.2) are suspended in a weak alkali (from pHIO to 12) solution is applied to the polished surface in 3 liters Z minutes. While supplying, rotate the polishing table 1 at 2000 rpm and the sample holder 3 on which the sample B is placed at 200 rpm.

Next, the sample holder 3 is moved to a position β where the peripheral part of the polishing pad 2 is located vertically above the rotation center. Lower the polishing setting 1 to the point ft where the polishing cloth 2 comes into contact with the sample Β. This contact position is determined by detecting the motor output load of the rotary spindle 6 that rotates the polishing table 1.

By this contact position ft, the polishing constant Si is further reduced to a position where the elastic body 201 is substantially O.Smm deformed. The sample holder 3 on which the sample B is placed is horizontally oscillated by a distance substantially equal to the radius of the sample B in a direction away from the center of the polishing stage 1, and the sample B is polished. The sample B can be uniformly polished by such polishing. Further, by performing the polishing with the rotary spindle 6 for rotating the polishing table 1 being rotated several degrees in the vertical direction, the peripheral portion of the subject B can be polished more uniformly.

Further, unlike the above-described method, after the polishing table 1 is brought into contact with the surface of the sample B, the polishing may be performed without reducing the polishing table 1. In this case, a water film of the polishing agent 8 is formed on the surface of the sample B by the polishing settling 1 and the rotation of the sample holder 3, and the pressure of the water deforms the elastic body 201, and the polishing surface of the sample B and the polishing cloth A gap of several IDs occurs between the two surfaces. The gap allows the polishing cloth 2 and the sample B polishing surface to be insensitive to each other or to be polished in a state close to this. In this way, the polished surface of sample B can be polished more uniformly than the above-mentioned method.

In the case where the sample B is a wafer having a wiring and an insulating film formed on a silicon wafer substrate, a method of polishing using the above-described polishing apparatus will be described below. The 50th is a schematic sectional view showing the structure of Sample B. The flatness of the large-diameter silicon wafer substrate 31 having a diameter of 8 inches is 2 to 3βΐη, and boat brans 34, 34,... Are formed thereon, and an insulating film 33 is deposited so as to cover them. The thickness distribution of the insulating film 33 is 10 mm, and the flatness of the sample Β is 3 to 4 nm. Such a sample B is fixed on the sample holder 3 by the vacuum chuck 4. The elastic body 201 is made of silicone rubber (thickness of about 15 to 20 lots, H, = 55, tensile strength 80 kg / cm ^s ), and the polishing cloth 2 is made of a mixture of polyurethane resin and fiber. Adjust the tension so that 201 deforms by approximately 0.1 mm, and make the thickness of the polishing pad 2 0.8 mm or less, and if possible, 0.5 or less. First Si 0 ₂ ultrafine particulate abrasive (average particle diameter 0. 1 # m 0, 2 ju n up) a (from pHIO to 12) weakly alkaline solution suspension ¾8 abrasive 8 obtained by the three re-flop Torr / min While supplying to the surface, rotate the polishing table 1 at 2000 rpn and the sample holder 3 on which fibrous material B is loaded with a 200r pin. Since the polishing cloth 2 has a hard thickness of 0.8 BID or less, the polishing cloth 2 and the elastic body 201 follow the macro unevenness of the contact surface of the sample B, and the polishing cloth 2 Since the shape does not follow the micro α-like irregularities on the contact surface of the material B, the material can be efficiently micro-planarized over the entire surface. When the polishing cloth 2 is made of a soft material such as black pi-prene sponge, the change in the amount of deformation of the elastic body 201 is 3 to 4 zm and the change in pressure of the polishing plate 1 is 20. It is desirable to set it to be less than%.

In addition to the materials shown in the above-described embodiment, the polishing cloth 2 may be made of a sheet made of Teflon, a non-woven cloth, foamed polyurethane resin, oxide particles such as cerium oxide, or diamond. I one der such榭脂of particle-filled _good! β

(Second embodiment)

FIG. 6 is a partial sectional front view showing a second embodiment of the present invention. In the case of polishing 1, the center of the upper surface is linked to the lower end of the rotary spindle 6, and can be rotated horizontally. Below the polishing table 1, there is provided a material holder 3 cut on a spindle 55 capable of horizontal rotation and horizontal movement. The spindle 55 is arranged at a position concentric with the polishing tangent 1, and the rotation center of the spindle 55 can move horizontally about the radius of the sample from the center of the polishing cloth 2 in the direction of the circumference.

A concentric circular recess is formed on the lower surface of the polishing table 1. An RS-shaped elastic body 202 having a spherical surface on one side is fitted into the recess. The peripheral portion is thicker than the depth of the depression, and the elastic body 202 has a shape protruding from the polishing surface 1.

The polishing pad 2 is fixed over the elastic body 202 in the same manner as in the first embodiment. When polishing is performed by such instrumentation fi, first the _β and specimen holder 3 Sample B is fi Court on specimen holder 3, the center is polished Polishing from the center of definition 1 by approximately the radius of sample B. 1 Polishing by moving horizontally in the peripheral direction. Thus, the polished surface of sample B can be uniformly polished. In addition, polishing is performed by using the rotating spindle 6 that rotates the polishing constant 1 several times in the vertical direction to avoid concentration of the contact position fi of the polishing cloth 2 on the sample B, and polishing is performed. The wear resistance of the cloth 2 can be improved.

(Third embodiment)

Seventh embodiment is a partial sectional front view showing the third embodiment of the present invention.

In the figure, reference numeral 1 denotes a circular polishing table, the center of the upper surface is connected by the lower part of the rotary spindle 6, and can be rotated horizontally. Below the polishing table 1, a circular sample holder 3 for mounting a sample mounted on a spindle 55 capable of horizontal rotation and horizontal movement is provided. The spindle 55 is arranged concentrically with the polishing table 1 so that the center of rotation of the spindle 55 can move horizontally from the center of the polishing cloth 2 in the direction of at least the radius of the sample.

On the lower surface of the polishing table 1, a concentric circular recess is formed. Under the polishing table 1, the peripheral edge of the polishing cloth 2 is fixed by fixing rings 102, 103, 103,... And bolts 104, 104, as in the first embodiment. An enclosing bag 9 is inserted between the polishing table 1 and the polishing cloth 2. The supply duct 10 for supplying the liquid 203 to the encapsulating bag 9 is attached to the center of the upper surface of the encapsulating bag 9 through the center portion of the rotating spindle 6 _beta

The liquid 203 is injected from the supply duct 10 into the enclosing bag 9, and a fluid enclosing portion having a spherical shape is formed on the polishing pad 1 and the polishing pad 2, and the polishing is performed near the center of the polishing pad 2. An abrasive supply nozzle 7 that ejects a polishing agent 8 is provided. When polishing with such a device g, first, the sample B is placed on the sample holding table 3. And the supply duct 10 By injecting the liquid 203 into the enclosing bag 9 using a constant-pressure pump (not shown), the pressure of the liquid 203 in the enclosing bag 9 can be adjusted. At this time, the lower surface of the polishing pad 2 is substantially spherical due to the shape of the liquid sealing portion.

Next, the sample holder 3 is moved to a position where the rotation axis of the sample holder 3 and the rotation axis of the polishing platen 1 are on the same vertical line, and the respective rotations are started to perform polishing. In this manner, uniform polishing can be achieved by pressing each position fi of the polished surface of the sample B with a substantially constant pressure. The sample holder 3 may be polished while being fixed at a position g where the rotation is the same as the polishing rate S 1 as described above, or may be polished while moving in the radial direction of the sample. Although the liquid is sealed in the sealing bag 9 in this embodiment, gas may be sealed instead of the liquid.

(Fourth embodiment)

FIG. 8 is a schematic partial cross-sectional view of a polishing apparatus showing a fourth embodiment of the present invention, which is the first embodiment described above. The polishing cloth 2 of the polishing apparatus shown in FIG. FIG. 2 is an enlarged sectional view of an elastic body 201 and a sample B of FIG. As shown in FIG. 8 (a), the polishing cloth 2 has a structure in which resin belts 205, 205,... Are embedded on the side of the second elastic body 204, such as soft urethane rubber, which is in contact with the sample B. An elastic body 201 made of black pi-prene rubber is interposed between the polishing cloth 2 and the polishing platen 1 (FIG. 4). For the resin pellets 205, a spherical one made of vinyl chloride or polyethylene and having a diameter of 0.3 mm is used. The sample B has a structure in which the wiring 54, 54... And the insulating film 53 are formed on a silicon wafer 51. Polish the insulating film 53. The surface of the sample B is made uneven by K bran 54, 54, and so on. The convex part is selectively polished and does not contact the concave part. Thereby, the flatness of the family B from the microscopic viewpoint is improved.

FIG. 8) is a schematic cross-sectional view macroscopically showing the polishing pad 2, the current plate-shaped elastic body 201, and the sample B of FIG. 8 (a). The resin pellets 205, 205 ... and distributions 54, 54 ... are omitted. When the surface of the sample B was polished, the elastic deformation of the second elastic body 204 of the polishing cloth 2 caused the shape of the polishing cloth 2 to follow the shape of the surface of the sample B in terms of the Mac α, and the polishing of the sample 表面 surface The degree becomes uniform.

Note that the resin pellets described above are preferably harder than the second elastic body, and a spherical one made of vinyl chloride or polyethylene and having a diameter of 0.3 mm is used, but is not limited thereto. The following particles such as A 1, O i, Ce 0, or diamond may be contained in vinyl chloride or polyethylene.

The fourth embodiment described above describes a case where the resin pellets 205, 205,... Of the polishing pad 2 are embedded in the surface of the second flexible body 204 on the material B side. The first elastic body 204 may be fixed to the adhesive surface provided on the surface of the sample B side of the second elastic body 204, and may be attached to the surface 1R.

(Fifth embodiment)

Next, FIG. 9 is a schematic partial cross-sectional view of a polishing apparatus showing a fifth embodiment of the present invention, which is a polishing cloth 2 of the polishing apparatus shown in FIG. FIG. 2 is an enlarged cross-sectional view of a sheet-like elastic body 201 and a sample B. As shown in Fig. 9, the polishing cloth 2 is formed of a second elastic body 206 having concave portions 206a, 206a '"on the contact side with the sample B. The second elastic body 206 For example, a pad with a thickness of 1,5 thighs made of a nonwoven fabric impregnated with urethane rubber and hardened, with an opening of O.lMi X 0.1 and a depth of 1.4 咖recesses 206a, 206a ... are provided at a pitch 1.5 mm. sample B is of structure Hai鏃54, 54 ... and the insulating film 53 is formed on the silicon wafer 51, S i 0 ₂ than Fine particles (Average particle size Polishing while suspending the polishing agent 8 at a rate of 3 liters / min from 0.05.05 // Π to 0.2 / £ fli) in a weak alkali (from PH 10 to 12) solution. The platen 1 is rotated at 2000 rpm, and the sample holder 3 on which the sample B is placed is rotated at 200 rpm. Then, polishing is performed in the same manner as in the first embodiment. At this time, since the second elastic body 206 of the polishing pad 2 is hard, the second elastic body 206 does not follow the micro unevenness of the sample B, and the micron-like flatness of the sample B is improved. Also, since the portions 206a, 206a,... Are formed on the second elastic body 2D6 of the polishing cloth 2, the polishing amount on the surface of the sample B becomes uniform macroscopically along the shape of the surface of the sample B.

The opening of the concave portion formed in the second elastic body 206 of the polishing pad 2 used in the above-described embodiment 5 has a size of O.lmtnx O.lmra, but it is not necessary to pay attention to this. Instead, a clear concave portion may be used. Further, a convex portion may be provided on the surface of the second elastic body 206 on the sample B side.

Next, the results of polishing the wafer on which the SiO ₂ film was deposited using the above-described fourth embodiment device fi and measuring the flatness thereof are shown. FIG. 10 is a graph showing the results obtained by measuring the level difference on the surface of the sample B each time polishing is performed by the polishing apparatus partially shown in FIG. 8 (a). The vertical axis shows the surface step, and the horizontal axis shows the fi (dimension) of the K 锒 pattern. As is clear from the graph, the level difference of about 2 / im before polishing slightly decreased to 0.5 / zm with the number of times of polishing, indicating that the flatness was improved. Industrial applicability

As described above, according to the present invention, a disc-shaped elastic body or a fluid having a spherical surface on one side is interposed between the polishing platen and the polishing cloth, so that the polishing cloth surface and the sample are interposed. The streak-like streak with the polished surface becomes uniform, and the flatness of the sample can be improved. Also, since the pressure of the fluid can be controlled, the pressing force of the polishing cloth surface to the sample polishing surface can be easily controlled. It has the effect of being able to troll.

Further, according to the present invention, a gap is provided between the polishing cloth surface and the sample polishing surface, and polishing is performed by supplying an abrasive to the gap, so that the load applied to the sample is reduced and the sample is smoothened. This has the effect of improving polishing properties and reducing polishing strain.

Further, according to the present invention, the second elastic body is used for the polishing cloth, and the resin velvet and / or the abrasive particles are embedded or attached on the sample contacting surface side of the elastic body. The sample is polished to a uniform thickness macroscopically, and the microscopic flatness of the polished surface is improved. In addition, the sample is polished to a uniform thickness in the shape of a α by using a second abrasive polishing cloth provided with a convex portion, a concave portion, or a clean portion on the sample contact surface, and the sample polished surface has a microscopic flatness. This has the effect of improving the performance.

Further, according to the present invention, the elasticity is interposed between the polishing surface and the polishing cloth, and the second elastic body is used for the polishing cloth, so that the flatness of the sample can be improved. .

Claims

Claim aspects

1. Abrasive is applied between the flat sample held by the rotating sample holder and the polishing cloth applied to the rotating polishing plate to polish the flat sample. A polishing apparatus g, characterized in that in the polishing apparatus, a viscous portion is interposed between the polishing platen and the polishing cloth.

2. The polishing apparatus according to claim 1, wherein the elastic portion is a plate-like elastic body.

8. The elastic member according to claim 1, wherein the elastic portion is a circular elastic member having a spherical surface on one surface, and the spherical surface is interposed on the polishing cloth side. Polishing equipment.

4. The polishing device fi according to item 1, wherein the elastic portion is a fluid needle insertion portion in which a fluid is sealed.

5. The polishing machine according to IS, item 4, SB, which is required to provide a means for controlling the pressure of the fluid in the fluid filling section.

6. Abrasive for supplying an abrasive to the flat sample held on the rotating sample holder and the polishing cloth applied on the rotating polishing table to polish the flat sample. In the polishing apparatus IS, the polishing cloth is characterized in that the polishing pad is provided with a resin pellet and a second elastic body in which abrasive particles or abrasive particles are embedded or attached to a sample contact surface.

7. Abrasive is supplied between the flat sample held by the rotating sample holding table and the polishing cloth adhered to the rotating polishing plate S to polish the flat sample. In the polishing device fit, the polishing cloth is characterized in that the polishing cloth has a second elastic body provided with a convex portion, a concave portion, or a cleaning portion on a material contact surface.

8. The pre-E polishing cloth is characterized in that the sample contact surface is provided with a second elastic body in which resin pellets and Z or abrasive particles are embedded or attached to the sample contact surface. Item 8, 4, or 5 Polishing equipment fi on IS.

9. The polishing cloth according to claim 2, 3, 4 or 5, wherein the second elastic body provided with a convex portion, a concave portion or a tongue is bonded to a sample contact surface. Polishing equipment.

10. A polishing method characterized by using the polishing apparatus according to claim 1 and polishing the flat plate by independently rotating the polishing table and the polishing table.

1 1. The polishing method according to item 10 above, wherein the elastic portion is a ring-shaped elastic body. One '

1 2. The range of claim 10 wherein the elastic portion is a disc-shaped elastic body having a spherical surface on one side, and the spherical surface is interposed on the polishing cloth side. The polishing method as described above.

1 3. The polishing method according to item 10 of the range of finished products, wherein the pre-equilibrium part is a fluid-enclosed part in which a fluid is enclosed.

14. The polishing method according to claim 13, further comprising means for controlling the pressure of the fluid in the fluid sealing portion.

1 5. A polishing method characterized by using the polishing apparatus S according to claim 6 and rotating the polishing platen and the sample holder independently to polish a flat sample.

1 6. A polishing method characterized by using the polishing apparatus according to claim 7 and polishing the flat sample by independently rotating the polishing table and the sample holder.

1 7. The polishing cloth according to claim 1, wherein the sample contact surface is provided with a second elastic body in which a wood pellet and / or abrasive particles are embedded or attached. Polishing method described in 12, 13, or 14.

18. The polishing cloth according to claim IB, wherein the polishing cloth is provided with a second elastic body provided with a convex portion, a concave portion, or a groove portion on a sample contact surface. 13. The polishing method according to item 13, 13 or 14.