WO1987006027A2 - An etch technique for metal mask definition - Google Patents
An etch technique for metal mask definition Download PDFInfo
- Publication number
- WO1987006027A2 WO1987006027A2 PCT/GB1987/000210 GB8700210W WO8706027A2 WO 1987006027 A2 WO1987006027 A2 WO 1987006027A2 GB 8700210 W GB8700210 W GB 8700210W WO 8706027 A2 WO8706027 A2 WO 8706027A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- etchant
- technique
- layer
- masking material
- resist
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Definitions
- the present invention concerns improvements in or relating to etch techniques for metal mask definition.
- Chrome metal coated mask plates are widely used in the manufacture of microelectronic devices. Images on the mask plate are replicated in photoresists on wafers of different kinds. Replication is usually by means of exposure of the resist to U.V. light with the mask plate in contact with the resist, or by imaging the mask plate with a lens, again using U.V. light.
- a wet isotroptic etchant is used to delineate features in the chrome coating of the mask, through a layer of patterned resist, there will be undercutting of the resist image by an amount comparable with the thickness of the chrome coating (typically 800 ⁇ ). Thus a slot developed in the resist will be broadened by about 0.2 micron when transferred to the chrome coating.
- chrome features eg. holes
- a dry etching technique such as reactive ion etching
- RIE reactive ion etching
- the present invention is intended as an improved dry etch technique wherein chrome or like metal mask features may be defined to a high degree of accuracy.
- the solution provided here is to use a masking layer in place of the electron resist alone, in particular a masking layer of a material which will not erode significantly during plasma or reactive ion etching of the chrome or like metal coating, but which can be patterned readily by electron-lithography.
- an etch technique for metal mask definition comprising:- providing a mask blank of metal-coated material; forming, in contact with the metal coating on the surface of the mask blank, a layer of selectively non-erodable masking material patterned using electron resist and electron-lithography; dry etching the metal coating using a first etchant, an etchant that is selective with respect to the metal coating; and, removing the layer of masking material using a second etchant, an etchant that is selective with respect to the masking material. It is an advantage of the technique aforesaid that the selectively non-erodable material can be patterned to a high resolution to serve thereafter as a more satisfactory masking material during subsequent dry etching.
- Suitable selectively non-erodable materials include oxides and metals, particularly, but not exclusively: silicon dioxide; silicon; titanium; germanium; nickel; and, aluminium.
- Various methods may be employed as a means of patterning the layers of masking material.
- a full planar layer of the masking material may be provided on the surface of the metal coating and covered by electron resist. The latter then is patterned electronlithographically and the image, thus formed, transferred to the underlying masking material by subsequent etching.
- a full planar layer of electron resist may be provided on the surface of the metal coating and patterned by electron-lithography. This layer, now patterned, is then covered by deposited masking material and then removed to float-off surplus masking material leaving a patterned layer of the remaining masking material in relief.
- Figures 6 to 9 are cross-section illustrations showing a metal-coated mask blank at successive steps of a second and alternative technique performed likewise in accord with this invention.
- the comparative data given is for an RIE configuration in which the plate to be etched is placed on the driven elect rode.
- the layer of electron resist 7 may be applied first. This layer 7 thus may be spun onto the surface of the chrome Cr coating 3, exposed and developed in normal manner, and the silicon dioxide SiO 2 layer pattern 1 formed by a process of deposition and float-off.
- the technique described is not limited to the use of silicon dioxide SiO 2 as masking material. Indeed there can be advantages in using aluminium Al in place of silicon dioxide SiO 2 , especially where a float-off process is used.
- FIG. 6 As shown in the first of these figures, figure 6, a layer 7 of PMMA positive electron resist, typically 0.5 microns thick, has been spun onto the surface of the chrome Cr metal film coating 3. This resist layer 7 has been patterned electron-lithographically and a 0.1 to 0.2 micron thick layer 9 of aluminium evaporated onto the surface of the resist layer 7. The exposed parts of the chrome metal Cr coating 3 are also covered by aluminium Al 11.
- aluminium Al The advantage here of using aluminium Al is that it can be easily evaporated at a relatively low temperature and this will be deposited without causing any undue thermal distortion of the resist pattern 7.
- a chlorine based dry etchant (for example chlorine Cl, boron trichloride BCl 3 , or carbon tetrachloride CCl 4 plasma) may then be used to remove the masking aluminium material 11.
- the chosen plasma etchants show good selectivity for aluminium Al and therefore etch the same without appreciable effect upon the chrome metal Cr pattern 3.
- the chrome metal Cr pattern 3 is thus left on the surface of the mask 5 (figure 9).
- the aluminium Al can be removed by a selective wet etching procedure.
- the evaporation process must take place at a sufficiently low temperature to prevent thermal distortion of the resist pattern. Otherwise a deposition technique other than thermal evaporation should be adopted. As in the case of aluminium, discussed above, it must be possible to etch the chrome film on the mask with a plasma or other dry etch process which etches the masking material only very slowly. Titanium, silicon, germanium and nickel are other materials that can be chosen for the masking layer.
- This "float-off" process allows one to effectively "reverse” the polarity of the image. Thus one will obtain the inverse of the pattern that would have resulted if the resist pattern had been used as the etch mask. This can be beneficial if, for example, a high resolution light-field pattern is required. Ordinarily, to obtain a light-field pattern a negative resist would be used. These generally have a resolution inferior to positive resists however.
- the advantage of a "float-off" process, such as that described above, in this context, is that a positive resist can be used to achieve high resolution, and image reversal performed to obtain an image in the correct polarity.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8607950A GB2189903A (en) | 1986-04-01 | 1986-04-01 | An etch technique for metal mask definition |
GB8607950 | 1986-04-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1987006027A2 true WO1987006027A2 (en) | 1987-10-08 |
WO1987006027A3 WO1987006027A3 (en) | 1987-12-30 |
Family
ID=10595491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1987/000210 WO1987006027A2 (en) | 1986-04-01 | 1987-03-27 | An etch technique for metal mask definition |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0261195A1 (en) |
GB (1) | GB2189903A (en) |
WO (1) | WO1987006027A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991001516A2 (en) * | 1989-07-21 | 1991-02-07 | Board Of Regents, The University Of Texas System | Pattern forming and transferring processes |
US6090719A (en) * | 1998-01-09 | 2000-07-18 | Lg Semicon Co., Ltd. | Dry etching method for multilayer film |
US7186480B2 (en) | 2003-12-10 | 2007-03-06 | Micron Technology, Inc. | Method for adjusting dimensions of photomask features |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6645677B1 (en) * | 2000-09-18 | 2003-11-11 | Micronic Laser Systems Ab | Dual layer reticle blank and manufacturing process |
US6919167B2 (en) | 2002-11-14 | 2005-07-19 | Micell Technologies | Positive tone lithography in carbon dioxide solvents |
JP6282466B2 (en) * | 2013-12-27 | 2018-02-21 | マクセルホールディングス株式会社 | Metal mask for screen printing and manufacturing method thereof |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3975252A (en) * | 1975-03-14 | 1976-08-17 | Bell Telephone Laboratories, Incorporated | High-resolution sputter etching |
US4098917A (en) * | 1976-09-08 | 1978-07-04 | Texas Instruments Incorporated | Method of providing a patterned metal layer on a substrate employing metal mask and ion milling |
EP0021095A1 (en) * | 1979-06-29 | 1981-01-07 | International Business Machines Corporation | Direct process for the production of chrome masks with a pattern generator |
JPS56130750A (en) * | 1980-03-18 | 1981-10-13 | Mitsubishi Electric Corp | Manufacture of mask |
JPS56130751A (en) * | 1980-03-18 | 1981-10-13 | Mitsubishi Electric Corp | Manufacture of mask |
JPS56133738A (en) * | 1980-03-25 | 1981-10-20 | Mitsubishi Electric Corp | Forming method for pattern of photomask |
JPS57112025A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Formation of pattern |
EP0056845A2 (en) * | 1981-01-27 | 1982-08-04 | Siemens Aktiengesellschaft | Formation of metal oxide masks, especially by reactive ion etching |
JPS58152241A (en) * | 1982-03-08 | 1983-09-09 | Toshiba Corp | Manufacture of high-precision mask |
EP0101752A1 (en) * | 1982-08-25 | 1984-03-07 | Ibm Deutschland Gmbh | Reversal process for the production of chromium masks |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5593225A (en) * | 1979-01-10 | 1980-07-15 | Hitachi Ltd | Forming method of minute pattern |
GB2139781B (en) * | 1983-05-13 | 1986-09-10 | American Telephone & Telegraph | Mask structure for vacuum ultraviolet lithography |
-
1986
- 1986-04-01 GB GB8607950A patent/GB2189903A/en not_active Withdrawn
-
1987
- 1987-03-27 WO PCT/GB1987/000210 patent/WO1987006027A2/en not_active Application Discontinuation
- 1987-03-27 EP EP19870902125 patent/EP0261195A1/en not_active Withdrawn
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3975252A (en) * | 1975-03-14 | 1976-08-17 | Bell Telephone Laboratories, Incorporated | High-resolution sputter etching |
US4098917A (en) * | 1976-09-08 | 1978-07-04 | Texas Instruments Incorporated | Method of providing a patterned metal layer on a substrate employing metal mask and ion milling |
EP0021095A1 (en) * | 1979-06-29 | 1981-01-07 | International Business Machines Corporation | Direct process for the production of chrome masks with a pattern generator |
JPS56130750A (en) * | 1980-03-18 | 1981-10-13 | Mitsubishi Electric Corp | Manufacture of mask |
JPS56130751A (en) * | 1980-03-18 | 1981-10-13 | Mitsubishi Electric Corp | Manufacture of mask |
JPS56133738A (en) * | 1980-03-25 | 1981-10-20 | Mitsubishi Electric Corp | Forming method for pattern of photomask |
JPS57112025A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Formation of pattern |
EP0056845A2 (en) * | 1981-01-27 | 1982-08-04 | Siemens Aktiengesellschaft | Formation of metal oxide masks, especially by reactive ion etching |
JPS58152241A (en) * | 1982-03-08 | 1983-09-09 | Toshiba Corp | Manufacture of high-precision mask |
EP0101752A1 (en) * | 1982-08-25 | 1984-03-07 | Ibm Deutschland Gmbh | Reversal process for the production of chromium masks |
Non-Patent Citations (11)
Title |
---|
IBM Techical Disclosure Bulletin, Volume 21, No. 8, January 1979, (New York, US), D.E. COX: "Reducing the Thickness of Resist Milling Masks", pages 3406-3408 see the whole document * |
Japanese Journal of Applied Physics, Volume 20, No. 11, November 1981, (Tokyo, JP), T. YAMAZAKI et al.: "An all Dry Mask Making Process by Gas Plasma", pages 2191-2195 see the whole document * |
Journal of the Electrochemical Society, Volume 130, No. 11, November 1983, (Manchester, New Hampshire, US), B.J. CURTIS et al.: "Plasma Processing of Thin Chromium Films for Photomasks", pages 2242-2249 see the whole document * |
PATENT ABSTRACTS OF JAPAN, Volume 5, No. 134 (P-77) (806), 26 August 1981, & JP, A, 5672444 (Nippon Denki K.K.) 16 June 1981 * |
PATENT ABSTRACTS OF JAPAN, Volume 6, No. 205 (E-136) (1083), 16 October 1982, see the whole Abstract & JP, A, 57112025 (Fujitsu K.K.) 12 July 1982 * |
PATENT ABSTRACTS OF JAPAN, Volume 6, No. 5 (P-97) (883), 13 January 1982, see the whole Abstract & JP, A, 56130750 (Mitsubishi Denki K.K.) 13 October 1981 * |
PATENT ABSTRACTS OF JAPAN, Volume 6, No. 5 (P-97) (883), 13 January 1982, see the whole Abstract & JP, A, 56130751 (Mitsubishi Denki K.K.) 13 October 1981 * |
PATENT ABSTRACTS OF JAPAN, Volume 6, No. 8 (P-98) (886), 19 January 1982, see the whole Abstract & JP, A, 56133738 (Mitsubishi Denki K.K.) 20 October 1981 * |
PATENT ABSTRACTS OF JAPAN, Volume 7, No. 138 (P-204) (1283), 16 June 1983, & JP,A, 5852641 (Tokyo Shibaura Denki K.K.) 28 March 1983 * |
PATENT ABSTRACTS OF JAPAN, Volume 7, No. 200 (E-196) (1345), 3 September 1983, see the whole Abstract & JP, A, 5898931 (Mitsubishi Denki K.K.) 13 June 1983 * |
PATENT ABSTRACTS OF JAPAN, Volume 7, No. 274 (P-241) (1419), 7 December 1983, see the whole Abstract & JP, A, 58152241 (Tokyo Shibaura Denki K.K.) 9 September 1983 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991001516A2 (en) * | 1989-07-21 | 1991-02-07 | Board Of Regents, The University Of Texas System | Pattern forming and transferring processes |
WO1991001516A3 (en) * | 1989-07-21 | 1991-04-18 | Univ Texas | Pattern forming and transferring processes |
US5178989A (en) * | 1989-07-21 | 1993-01-12 | Board Of Regents, The University Of Texas System | Pattern forming and transferring processes |
US6090719A (en) * | 1998-01-09 | 2000-07-18 | Lg Semicon Co., Ltd. | Dry etching method for multilayer film |
US7186480B2 (en) | 2003-12-10 | 2007-03-06 | Micron Technology, Inc. | Method for adjusting dimensions of photomask features |
US7749663B2 (en) | 2003-12-10 | 2010-07-06 | Micron Technology, Inc. | Method for adjusting dimensions of photomask features |
Also Published As
Publication number | Publication date |
---|---|
GB2189903A (en) | 1987-11-04 |
GB8607950D0 (en) | 1986-05-08 |
EP0261195A1 (en) | 1988-03-30 |
WO1987006027A3 (en) | 1987-12-30 |
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