UST953005I4 - Schottky barrier diode having chargeable floating gate - Google Patents

Schottky barrier diode having chargeable floating gate Download PDF

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Publication number
UST953005I4
UST953005I4 US05/647,284 US64728476A UST953005I4 US T953005 I4 UST953005 I4 US T953005I4 US 64728476 A US64728476 A US 64728476A US T953005 I4 UST953005 I4 US T953005I4
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US
United States
Prior art keywords
schottky barrier
gate
barrier diode
diode
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US05/647,284
Inventor
Narasipur G. Anantha
Robert C. Dockerty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US05/647,284 priority Critical patent/UST953005I4/en
Application granted granted Critical
Publication of UST953005I4 publication Critical patent/UST953005I4/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A Schottky barrier diode having an encircling floating polycrystalline silicon gate which becomes charged upon avalanche breakdown of the diode. The gate is self-aligned with respect to the Schottky barrier diode metal so that the gate uniformly overhangs the depletion area in the semiconductor when the diode is reverse biased. The gate is insulated from the semiconductor material and from the metal by dielectric layers including silicon dioxide and silicon nitride.
US05/647,284 1976-01-07 1976-01-07 Schottky barrier diode having chargeable floating gate Pending UST953005I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/647,284 UST953005I4 (en) 1976-01-07 1976-01-07 Schottky barrier diode having chargeable floating gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/647,284 UST953005I4 (en) 1976-01-07 1976-01-07 Schottky barrier diode having chargeable floating gate

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US43712074A Continuation 1974-01-28 1974-01-28

Publications (1)

Publication Number Publication Date
UST953005I4 true UST953005I4 (en) 1976-12-07

Family

ID=24596337

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/647,284 Pending UST953005I4 (en) 1976-01-07 1976-01-07 Schottky barrier diode having chargeable floating gate

Country Status (1)

Country Link
US (1) UST953005I4 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130221415A1 (en) * 2012-02-24 2013-08-29 The Regents Of The University Of California Field-Effect P-N Junction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130221415A1 (en) * 2012-02-24 2013-08-29 The Regents Of The University Of California Field-Effect P-N Junction
US9024367B2 (en) * 2012-02-24 2015-05-05 The Regents Of The University Of California Field-effect P-N junction

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