US9556514B2 - Spatial deposition of material using short-distance reciprocating motions - Google Patents
Spatial deposition of material using short-distance reciprocating motions Download PDFInfo
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- US9556514B2 US9556514B2 US14/604,332 US201514604332A US9556514B2 US 9556514 B2 US9556514 B2 US 9556514B2 US 201514604332 A US201514604332 A US 201514604332A US 9556514 B2 US9556514 B2 US 9556514B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Definitions
- the present disclosure relates to depositing one or more layers of materials on a substrate using vapor phase deposition.
- An atomic layer deposition is a thin film deposition technique for depositing one or more layers of material on a substrate.
- ALD uses two types of chemical, one is a source precursor and the other is a reactant precursor.
- ALD includes four stages: (i) injection of a source precursor, (ii) removal of a physical adsorption layer of the source precursor, (iii) injection of a reactant precursor, and (iv) removal of a physical adsorption layer of the reactant precursor.
- ALD can be a slow process that can take an extended amount of time or many repetitions before a layer of desired thickness can be obtained.
- a vapor deposition reactor with a unit module (so-called a linear injector), as described in U.S. Patent Application Publication No. 2009/0165715 or other similar devices may be used to expedite ALD process.
- the unit module may include an injection unit and an exhaust unit for a source material (collectively a source module), and an injection unit and an exhaust unit for a reactant (collectively a reactant module).
- a source module an injection unit and an exhaust unit for a source material
- a reactant module collectively a reactant module
- a spatial ALD vapor deposition chamber has one or more sets of reactors for performing spatial ALD on substrates.
- Spatial ALD refers to a process where source precursor, purge gas, reactant precursor and purge gas are sequentially injected onto a moving substrate to form a layer of film thereon. As the substrate passes below the reactors, the substrate is exposed to the source precursor, a purge gas and the reactant precursor. The source precursor molecules deposited on the substrate reacts with reactant precursor molecules or the source precursor molecules are replaced with the reactant precursor molecules to deposit a layer of material on the substrate. After exposing the entire substrate to the source precursor or the reactant precursor, the substrate may be exposed to the purge gas to remove excess source precursor molecules or reactant precursor molecules from the substrate.
- the substrate and the reactors may be moved by a reciprocating movement where the substrate is exposed to the precursor molecules in a different sequence during a forward stroke and a backward stroke.
- the substrate or the reactor may have to travel a long distance.
- the vapor deposition reactor may be very large to accommodate the reciprocal movement of the substrate or the reactor.
- Embodiments relate to depositing a layer of material on a substrate by using short-distance reciprocating movements. Relative movements between a substrate and reactors in a first direction and relative movements between the substrate and the reactors in a second direction by a second distance are repeated for a predetermined number of times. The first distance is shorter than a length of the substrate but longer than the second distance. The first direction is opposite to the second direction. Then, a relative movement between the substrate and the reactors in the first direction by a third distance shorter than the length of the substrate and a relative movement between the substrate and the reactors in the second direction by a fourth distance longer than the third distance are made. Gas or radicals are injected by each of the reactors during the relative movements of the substrate and the reactors.
- the relative movement by the third distance and the relative movement by the fourth distance are repeated for a predetermined number of times.
- the first and fourth distances are the same, and the second and third distances are the same.
- a difference between the first and second distances is the same as a different between the fourth and third distances.
- an offset representing the difference between the first distance and the second distance is smaller than a width of a reactor.
- a first subset of the reactors injects source precursor onto the substrate.
- a second subset of the reactors injects reactant precursor onto the substrate.
- a third subset of the reactors injects purge gas onto the substrate.
- the layers of material are deposited on the substrate by spatial atomic layer deposition (ALD) or chemical vapor deposition (CVD).
- ALD spatial atomic layer deposition
- CVD chemical vapor deposition
- Embodiments also relate to a deposition device that causes a substrate to make short-distance reciprocating motions during the injection of gas onto the substrate by reactors.
- the deposition device includes a susceptor, a set of reactors and an actuator.
- the susceptor holds a substrate.
- the reactors are arranged along a direction in which the susceptor moves. Each reactor injects gas or radicals onto a portion of the substrate.
- the actuator is coupled to the susceptor.
- the susceptor repeats movements of the susceptor in a first direction by a first distance shorter than a length of the substrate and movements of the susceptor in a second direction opposite to the first direction by a second distance shorter than the first distance for a predetermined number of times.
- the susceptor also moves in the first direction by a third distance shorter than the length of the substrate, and moves in the second direction by a fourth distance longer than the third distance.
- Embodiments also relate to a deposition device for a flexible substrate that moves on a support table.
- the support table has a flat top surface.
- a set of reactors is placed over the support table and arranged along the direction in which the flexible substrates moves.
- a roller assembly is fixed relative to the support table and slides a flexible substrate on the flat top surface of the support table in a first direction.
- An actuator assembly causes reciprocating relative movements of the support table relative to the set of reactors in the first direction and in a second direction opposite to the first direction.
- the relative speed of the roller sliding on the flat top surface is lower than the reciprocating speed of the support table.
- FIG. 1 is a cross sectional diagram of a linear deposition device, according to one embodiment.
- FIG. 2 is a perspective view of a linear deposition device, according to one embodiment.
- FIG. 3A is a cross sectional diagram illustrating a reactor, according to one embodiment.
- FIG. 3B is a cross sectional diagram illustrating a reactor according to another embodiment.
- FIG. 4A is a diagram illustrating movements of a substrate to deposit material on the substrate using a short-distance reciprocation, according to one embodiment.
- FIG. 4B is a cross sectional diagram illustrating a configuration of material deposited on a substrate by using the method of FIG. 4A .
- FIG. 5 is a flowchart illustrating a process of depositing material using a short-distance reciprocation and shifting of a substrate, according to one embodiment.
- FIG. 6 is a diagram illustrating movements of a substrate to deposit material on the substrate using short-distance reciprocations and shifting of the substrate, according to one embodiment.
- FIG. 7 is a flowchart illustrating a process of depositing material using short-distance reciprocations with different forward and backward stroke distances, according to one embodiment.
- FIGS. 8 through 11 are diagrams illustrating movements of a substrate to deposit material on the substrate using short-distance reciprocations with different forward and backward stroke distances, according to one embodiment.
- FIG. 12 is a diagram illustrating movements of a substrate to deposit material on the substrate using short-distance reciprocations where the starting and ending points during a forward progress sub-cycle and a backward retreat sub-cycle differ, according to one embodiment.
- FIG. 13A is a schematic diagram of a support table moved to a left end in a deposition device for depositing a material on a film, according to one embodiment.
- FIG. 13B is a schematic diagram of the support table of FIG. 13B moved to a right end in the deposition device, according to one embodiment.
- Embodiments relate to performing deposition of material on a substrate by causing short-distance reciprocating movements of the substrate.
- a series of reactors for injecting material onto the substrate is arranged along the length of the substrate in a repeating manner.
- the susceptor moves a distance shorter than an entire length of the substrate. Portions of the substrate are injected with materials by a subset of reactors. Since the movement of the substrate is smaller, a linear deposition device including the susceptor may be made smaller.
- the short-distance reciprocating motions the consistency and uniformity of the deposited layer can be enhanced by mixing the reciprocating motions with shifting motions or differing the forward and backward moving distances of the substrate during the reciprocating motions.
- the substrate may remain in a stationary location while moving the reactors. Furthermore, both the substrate and the reactors may be moved to deposit material on the substrate.
- ALD atomic layer deposition
- CVD chemical vapor deposition
- FIG. 1 is a cross sectional diagram of a linear deposition device 100 , according to one embodiment.
- FIG. 2 is a perspective view of the linear deposition device 100 (without chamber walls 110 to facilitate explanation), according to one embodiment.
- the linear deposition device 100 may include, among other components, a support pillar 118 , the process chamber 110 and one or more reactors 136 .
- the reactors 136 may include one or more of injectors and radical reactors. Each of the injector modules injects source precursors, reactant precursors, purge gases or a combination of these materials onto the substrate 120 .
- the reactors 136 may be arranged for a spatial ALD process as well as Chemical Vapor Deposition (CVD) process.
- the spatial ALD process may be performed by sequential injecting source precursor, purge gas, reactant precursor and purge gas onto a substrate 120 .
- CVD process can be performed by injecting both source precursor and reactant precursor and mixing these precursors in reactors and then injecting the mixed precursors onto the substrate 120 .
- the process chamber enclosed by the walls 110 may be maintained in a vacuum state to prevent contaminants from affecting the deposition process.
- the process chamber 110 contains a susceptor 128 which receives the substrate 120 .
- the susceptor 128 is placed on a support plate 124 for a sliding movement.
- the support plate 124 may include a temperature controller (e.g., a heater or a cooler) to control the temperature of the substrate 120 .
- the linear deposition device 100 may also include lift pins that facilitate loading of the substrate 120 onto the susceptor 128 or dismounting of the substrate 120 from the susceptor 128 .
- the susceptor 128 is secured to brackets 210 that moves across an extended bar 138 with screws formed thereon.
- the brackets 210 have corresponding screws formed in their holes receiving the extended bar 138 .
- the extended bar 138 is secured to a spindle of a motor 114 , and hence, the extended bar 138 rotates as the spindle of the motor 114 rotates.
- the rotation of the extended bar 138 causes the brackets 210 (and therefore the susceptor 128 ) to make a linear movement on the support plate 124 .
- the linear movement may include short-distance reciprocation or shifting motions of the support plate 124 that cause the substrate to move, as described below in detail with reference to FIGS. 6 and 8 through 12 .
- the speed and direction of the linear movement of the susceptor 128 can be controlled.
- the use of a motor 114 and the extended bar 138 is merely an example of a mechanism for moving the susceptor 128 .
- Various other ways of moving the susceptor 128 e.g., use of gears and pinion at the bottom, top or side of the susceptor 128 ).
- the susceptor 128 may remain stationary and the reactors 136 may be moved.
- FIG. 3A is a diagram illustrating a reactor 310 according to one embodiment.
- the reactor 310 may be an injector for injecting source precursor, reactant precursor, purge gas or a combination thereof onto a substrate 314 .
- the reactor 310 is raised above the substrate 314 by height H 1 (e.g., from 0.5 mm to 3 mm) to provide sufficient clearance for the substrate 314 to pass below the reactor 310 .
- Injector 310 receives source precursor, reactant precursor, purge gas or a combination thereof via a pipe and injects the source precursor into its chamber 316 via a channel 312 and holes 311 formed in the injector 310 .
- source precursor, reactant precursor, purge gas or a combination thereof comes into contact with the substrate 314 .
- the remaining gas is ejected via a constriction zone (having a height of H 2 ) to outlets 318 . In the constriction zone, the speed of the gas flow is increased, facilitating removal of redundant gas from the surface of the substrate 314 .
- FIG. 3B is a diagram illustrating an injector 370 and a radical reactor 374 , according to one embodiment. As illustrated, the injector 370 is raised above the substrate 314 by height H 1 , and the radical reactor 374 is raised above the substrate 314 by height H 4 to provide sufficient clearance for the substrate 314 to pass below the injector 370 and the radical reactor 374 .
- the injector 374 receives gas via a pipe 364 and injects the gas into its chamber 384 via a channel 372 and holes 373 formed in the injector 370 .
- the gas injected via the injector 374 may be a source precursor, a reactant precursor, a purge gas or gases for any other purpose.
- the gas then comes into contact with the substrate 314 and performs the function as precursors or purge gas.
- the remaining gas is discharged via a constriction zone 386 (having height of H 2 ) to an outlet 371 . In the constriction zone 386 , the speed of the gas flow is increased, facilitating removal of redundant gas from the surface of the substrate 314 .
- the radical reactor 374 receives gas via pipe 366 .
- the gas is injected into a cavity 380 between an inner electrode 376 and an outer electrode 378 .
- Voltage is applied across the inner electrode 376 and the outer electrode 378 so that when the gas is injected into the cavity 380 , plasma of the gas generates radicals in the cavity 380 .
- the radicals of the gas are then injected into a chamber 390 where the radicals come in contact with the substrate 314 . Radicals reverted to inactive state as well as some redundant radicals pass through a constriction zone 388 (having height of H 3 ) and are discharged via the outlet 371 .
- the reactors of FIGS. 3A and 3B are merely illustrative. Various other types of reactors may be used in the linear deposition device 100 . In alternative embodiments, the reactors may include only injectors, only radical reactors, more than two injectors and radical reactors or radical reactors/injectors in a different sequence.
- FIG. 4A is a diagram illustrating a series of injectors 136 arranged along the moving direction of a substrate 410 , according to one embodiment.
- the series of injectors may include injectors 418 A through 418 N for injecting source precursor onto the substrate 410 and injectors 422 A through 422 N for injecting reactant precursor onto the substrate 410 .
- Injectors 420 A through 420 N and injectors 423 A through 423 N inject purge gas onto the substrate 410 to remove excessive source or reactant precursor molecules from the substrate 410 .
- all injectors are assumed to have the same width of U.
- radical reactors or injectors for injecting purge gas onto the substrate 410 may also be included in the series of injectors.
- One way of performing atomic layer deposition (ALD) on the substrate 410 is by moving the substrate 410 in one direction (e.g., forward) by a certain stroke distance and then moving back the substrate 410 in the opposite direction (e.g., backward) by the same stroke distance.
- ALD atomic layer deposition
- the substrate 410 may be moved by three unit distances U to the right and then back to the original location where unit distance U corresponds to the width of an injector.
- a portion (denoted by “X” in FIG. 4A ) of the substrate on the right side of the reference point 424 is sequentially injected with a source precursor by injector 418 A, a purge gas by an injector 420 A, a reactant precursor by injector 422 A, and a purge gas by injector 423 A.
- a source precursor by injector 418 A a source precursor by injector 418 A
- a purge gas by an injector 420 A a reactant precursor by injector 422 A
- a purge gas by injector 423 A i.e., a backward stroke
- the same portion of the substrate is exposed to source precursor, purge gas and reactant precursor in a reverse sequence.
- the total distance of movement D M of the substrate 410 in this example is 3 U, which is shorter than the entire length of the substrate 410 .
- the substrate 410 Based on the sequence of the injected material, the substrate 410 include a portion R 1 only adsorbed with source precursor, portions R 2 with an ALD layer at the bottom and source precursor adsorbed on the ALD layer, portions R 3 deposited with two ALD layers, and portions R 4 with ALD layer rich in source precursor at the bottom and a typical ALD layer on the top.
- the deposition of materials on the substrate 410 is uneven and inconsistent across the length (i.e., moving direction) of the substrate 410 .
- Such uneven and inconsistent deposition results in stripe patterns across the top surface of the substrate 410 .
- the uneven and inconsistent deposition of material on the substrate 410 may cause different portions of the substrate to have different properties such as different levels of transparency and a film stress level.
- the transparent deposited layer may show color fringe patterns due to different thicknesses across the substrate.
- different exposure time of either source precursor or plasma across the substrate may result in different composition or residual impurities due to different concentration of adsorbed source precursor or radicals.
- FIG. 5 is a flowchart illustrating a method of depositing a material on a substrate by reciprocating the substrate for a short distance and then shifting the location of substrate, according to one embodiment.
- the substrate is moved 520 in one direction (e.g., forward) by a first distance shorter than the length of the substrate while injectors are injecting the precursor materials onto the substrate.
- a reference point 424 on the substrate 410 is moved 5 units to the right as shown by arrow 616 .
- the substrate is moved in the opposite direction (e.g., backward) by the same first distance while the injectors are injecting the precursor materials onto the substrate.
- the reference point 424 moves to the left 5 units as shown by arrow 616 .
- the location of the susceptor is shifted 540 by a second distance that is shorter than the first distance.
- “Shifting” herein refers to an operation where the substrate is moved with the injectors shut off so that no precursor material is injected onto the surface of the substrate.
- the reference point 424 is shifted in the right direction (i.e., forward) by one unit as shown by arrow 618 .
- the process It is then determined 550 if the termination condition has been satisfied. If so, the process terminates. If not, the process returns to moving 520 susceptor in one direction by the first distance.
- the four reciprocating motions are made to progressively move the substrate 410 to the right (i.e., forward) per each reciprocating motion with a shifting motion performed between each reciprocating motion.
- a single reciprocating motion is made at a location furthest from the original point (as indicated by arrows 640 ), and then subsequent four reciprocating motions are made to progressively move the substrate 410 to the left (i.e., backward).
- Motions indicated in FIG. 6 may be repeated with the reference point 424 initially placed at the same location to deposit additional layers of materials on the substrate 410 .
- the reference point 424 of the substrate 410 may be shifted for a predetermined distance (e.g., 20 units) and then the motions indicated in FIG. 6 may be perform ALD process on a different portion of the substrate.
- the substrate 410 moves in the right direction (i.e., forward direction) by the maximum of 5 units during the reciprocating motions of FIG. 6 .
- the overall moving distance of movement of substrate 410 in FIG. 6 is significantly reduced, and therefore, the size of the vapor deposition reactor can be reduced significantly even if the size of the substrate 410 remains the same.
- the numbers of unit distance for moving the substrate in FIG. 6 is merely illustrative. More or fewer units of distance may be moved during the reciprocating motions. Further, the shifting movement may also be longer or shorter than the unit distance as illustrated in FIG. 6 .
- FIG. 7 is a flowchart illustrating a process of depositing material using short-distance reciprocations with different forward and backward stroke distances, according to one embodiment.
- the process includes a forward process sub-cycle and a backward retreat sub-cycle.
- the substrate is moved 714 in a first direction (e.g., forward) for a first distance that is shorter than the length of the substrate while injectors are injecting the precursor materials onto the substrate.
- a first direction e.g., forward
- the substrate is moved 718 in a second direction (e.g., backward) opposite to the first direction for a second distance that is shorter than the first distance while the injectors are injecting the precursor materials onto the substrate.
- the movement in the second direction concludes a single reciprocating motion of the forward progress sub-cycle.
- the substrate ends at a position progressed toward the first direction after conclusion of each reciprocating motion in the forward progress sub-cycle. Then it is determined 722 if the end point is reached (e.g., forward-most position of the substrate). If not, the process returns to moving 714 the susceptor in the first direction.
- the backward retreat sub-cycle is initiated.
- the substrate is moved 726 in the first direction for the third distance.
- the third distance may be the same as the second distance or different from the second distance.
- the substrate is moved 730 in the second direction for the fourth distance.
- the fourth distance may be the same as the first distance or different from the first distance. Since the fourth distance is longer than the third distance, the substrate ends at a position moved towards the second direction after the reciprocating motion. Then it is determined 734 if the start point is reached (e.g., backward-most position of the substrate). If not, the process returns to moving 726 the susceptor in the first direction by the third distance.
- FIG. 8 is a diagram illustrating reciprocating motions of the substrate 410 , according to one embodiment.
- arrows indicate the starting and ending locations of reference point 424 on the substrate 410 .
- the substrate 410 moves in the right direction (i.e., forward direction) by a first distance of 6 units and then moves in the left direction (i.e., backward direction) by a second distance of 5 units in a single reciprocating cycle.
- a unit described herein corresponds to the width of a single reactor. That is, after concluding a single reciprocating motion, the substrate 410 progresses one unit to the right.
- the substrate 410 repeats such reciprocating motions 5 times, progressing 5 units towards the right (i.e., forward) at the end of the forward progressing sub-cycle.
- 5 reciprocating motions collectively form forward progress sub-cycle.
- a backward retreat sub-cycle is initiated.
- the substrate 410 moves 5 units to the right (i.e., forward) and then moves 6 units to the left (i.e., backward). After repeating such reciprocating movements for 5 times, substrate 410 returns to the original location.
- sub-cycles may be repeated to deposit additional layers of material on the substrate 410 .
- the reference point 424 of the substrate 410 may be shifted for a predetermined distance (e.g., 20 units) and then the motions indicated in FIG. 8 may be perform ALD process on a different portion of the substrate.
- the embodiment of FIG. 8 yields more uniform deposition of material on the substrate 410 .
- stripe patterns are less apparent on the substrate 410 .
- the substrates moves to the right at most by 5 units during the sub-cycles. Further, operations to shut off the injectors are not needed during the forward progress sub-cycle and the backward retreat sub-cycle.
- FIG. 9 is a diagram illustrating reciprocating motions of the substrate 410 , according to one embodiment.
- arrows indicate the starting and ending locations of reference point 424 .
- the forward progress sub-cycle is started by moving the substrate to the right (i.e., forward) by a first distance of 5 units and then moving to the left (i.e., backward) by a second distance of 4 units in a single reciprocating motion. After concluding a single reciprocating cycle, the substrate 410 progresses one unit to the right.
- the substrate 410 repeats such reciprocating motions 4 times, progressing 4 units toward to the right (i.e., forward) at the end of the forward progressing sub-cycle.
- sub-cycles may be repeated to deposit additional layers of material on the substrate 410 .
- the reference point 424 of the substrate 410 may be shifted for a predetermined distance (e.g., 20 units) and then the motions indicated in FIG. 9 may be perform ALD process on a different portion of the substrate.
- the deposition of material becomes more uniform and consistent as the offset between the forward stroke distance and backward stroke distance of the reciprocating movement is reduced. Further, the offset need not be an integer of the unit distance. The offset may be less than one unit as described below in detail with reference to FIGS. 10 and 11 .
- FIG. 10 is a diagram illustrating reciprocating motions of the substrate 410 where the offset is 0.5 unit, according to one embodiment.
- the substrate moves to the right (i.e., forward) by a first distance of 5 units and then moves back to the left (i.e., backward) by a second distance of 4.5 units in a single reciprocating motion. That is, after concluding a single reciprocating cycle, the substrate 410 progresses 0.5 unit.
- the substrate 410 repeats such reciprocating motions 4 times, progressing 2 units toward the right at the end of the forward progressing sub-cycle. Then a backward retreat sub-cycle is initiated during which the substrate 410 moves 5 units to the right and then moves 5.5 units to the left. After repeating such reciprocating movement for 4 times, substrate 410 returns to its original location.
- these sub-cycles may be repeated to deposit additional layers of material on the substrate 410 .
- FIG. 11 is a diagram illustrating reciprocating motions of the substrate 410 where the offset is 1 ⁇ 3 unit, according to one embodiment.
- the substrate 410 moves 4 and 2 ⁇ 3 units by the forward stroke and moves 5 and 1 ⁇ 3 units by the backward stroke during a backward retreat sub-cycle.
- the forward process sub-cycle is repeated 5 times and the backward retreat sub-cycle is also repeated 5 times. After repeating the forward process sub-cycle and the backward retreat sub-cycles, the substrate 410 returns to its original location.
- embodiments described above with reference to FIGS. 8 through 11 has the starting and ending points in the forward progress sub-cycle coinciding with the starting and ending points in the backward retreat sub-cycle
- other embodiments may differ the starting and ending points during the forward process sub-cycle and the backward retreat sub-cycle.
- stripe patterns on the substrate caused by uneven deposition can be removed or alleviated.
- FIG. 12 is a diagram illustrating movements of a substrate to deposit material on the substrate using short-distance reciprocations during which the starting and ending points during a forward progress sub-cycle and a backward retreat sub-cycle differ, according to one embodiment.
- the process is initiated by moving the substrate 424 to the right (i.e., forward) for 6 units and then to the left (i.e., backward) for 6 units.
- the substrate 410 is exposed to source precursor, purge gas and reactant precursor by the injectors.
- the forward progress sub-cycle is initiated by moving the substrate 410 in the right direction (i.e., forward direction) by 7 units and then moving the substrate 410 in the left direction (i.e., backward direction) by 6 units.
- the substrate 410 moves one unit to the right after a single reciprocation motion in the forward progress sub-cycle.
- the reciprocation motions are repeated 4 times to move the substrate 410 in the right direction for 4 units during the forward progress sub-cycle.
- the backward retreat sub-cycle is initiated by moving the substrate 410 to the right for 5.5 units (as shown by arrow 1222 ) and then moving the substrate 410 to the left for 6 units (as shown by arrow 1226 ).
- the substrate 410 ends at a location 0.5 units to the left.
- a second reciprocation motion moves the substrate 410 to the right by 5 units (as shown by arrow 1230 ) and then moves the substrate 410 to the left by 6 units (as shown by arrow 1234 ). Accordingly, the substrate 410 ends at a location 1 unit to the left after concluding the second reciprocation motion.
- the reciprocation motions same as the second reciprocation motion is repeated for three more times during the backward retreat sub-cycle to move the substrate 410 to the left 0.5 units from the original position where the substrate 410 started the forward progress sub-cycle.
- starting and ending points differ in the forward progress sub-cycle and the backward retreat sub-cycle. That is, each reciprocation motion in the forward progress sub-cycle has a different starting and ending location that is different from each reciprocation motion in the backward retreat sub-cycle.
- material may be deposited on the substrate 410 in a more consistently.
- the starting and ending points of the forward progress sub-cycle and the backward retreat sub-cycle may be differed also by making the last reciprocation movement in the forward progress sub-cycle to move in the right direction by a distance that is different from the distance moved in the right direction in other reciprocating movements of the forward progress sub-cycle, instead of making the first reciprocating movement in the backward retreat subs-cycle to move in the left direction by a distance that is different from the distance moved to in the left direction in other reciprocating movements of the backward retreat sub-cycle, as shown in FIG. 12 .
- the substrate 410 may move to the right by 6.5 units or 7.5 units instead of 7 units as described above with reference to the embodiment of FIG. 12 .
- the substrate 410 may move to the left by 6 units and move to the right by 5 units in all reciprocating motions in the backward retreat sub-cycle. It is also possible to move the substrates by irrational number of times of the unit (e.g., 7.1 U or 7.2 U or 7.3 U or 7.4 U) in the forward progress sub-cycle or the backward retreat sub-cycle.
- irrational number of times of the unit e.g., 7.1 U or 7.2 U or 7.3 U or 7.4 U
- TMA Trimethylaluminium
- O* radicals of oxygen
- N* radicals of nitrogen
- TDMAT Tetrakisdimethylaminotitanium: [(CH 3 ) 2 N] 4 Ti
- TiCl 4 may be injected as source precursor, and radicals of oxygen (O*) or nitrogen (N*) may be injected as reactant precursor to deposit a layer of TiO 2 or TiN, respectively, on the substrate.
- SiO 2 film with Diisopropylamidosilane (SiH 3 N(C 3 H 7 ) 2 ))) as source precursor and radicals of oxygen (O*) or remote-plasma with (N 2 O+NH 3 ) mixed gas may be used.
- Metal ALD films can also be deposited using embodiments described herein.
- DMAH Dimethylaluminum-hydride: Al(CH 3 ) 2
- H* radicals of hydrogen
- FIG. 13A is a schematic diagram of a support table 1302 moved to a left end in a deposition device 1300 for depositing a material on a film 1344 , according to one embodiment.
- deposition is performed on flexible film 1344 .
- the deposition device 1300 includes, among other components, one or more reactor 136 , a support table 1302 , an extension plate 1304 , a raising table 1306 , a platform 1308 and roller assemblies 1310 A, 1310 B.
- the reactor 136 of FIG. 13A remains in a fixed location along with the platform 1308 , and has the same structure and function as the reactor 136 of FIG. 1 . Therefore, the detailed description of the reactor 136 is omitted herein for the sake of brevity.
- the support table 1302 , the extension plate 1304 and the raising table 1306 move relative to the reactors 136 and the platform 1308 to expose the film 1344 to materials or radicals injected by the reactors 136 .
- the support table 1302 has a top surface onto which the film 1344 is laid.
- the film 1344 may maintain a flat top surface while laid on the support table 1302 .
- the film 1344 placed on the support table 1302 is unrolled from the roller assembly 1310 A and rolled onto the roller assembly 1310 B during the deposition process.
- the extension plate 1304 is fixed to the support table 1302 and the raising table 1306 , and has the roller assemblies 1310 A, 1310 B attached to both ends of the extension plate 1304 .
- any other types of structures e.g., members may be used to attach the roller assemblies 1310 A, 1310 B at locations away from the support table 1302 .
- the raising table 1306 is placed between the platform 1308 and the support table 1302 .
- the raising table 1306 may include reciprocating mechanism 1314 such as linear motor, rack and pinions and a gear assembly to enable the raising table 1306 , along with the support table 1302 and the extension plate 1304 , to move relative to the reactors 136 and the platform 1308 .
- the raising table 1306 is moved left from the center “C” by a stroke distance of S L .
- FIG. 13B is a schematic diagram of the support table 1302 of FIG. 13B moved to a right end in the deposition device 1300 for depositing a material on the film 1344 , according to one embodiment.
- the raising table 1306 is moved right from the center “C” by a stroke distance of S R .
- the film 1344 is injected with different gases to deposit multiple layers of material.
- different portions of the film 1344 may be deposited with inconsistent and uneven material since different portions of the film are exposed to different materials or radicals and in different sequence.
- the roller assemblies 1310 A, 1310 B unwinds or winds the film 1344 to move the film 1344 as the process of injecting materials or reactants is being performed on the film 1344 .
- the series of reactors arranged along the length of the substrate may also different source precursor and reactant precursor to deposit different layers of material on the substrate.
- the thickness and the composition of materials deposited on the substrate may vary depending on the locations of the substrate.
- the location of the reciprocating motions or making progressive reciprocating motions where the starting points of the reciprocating motions and the ending points of the reciprocating motions differ upper layers with relatively consistent thickness and composition are deposited on the substrate.
- a high quality layer can be deposited on the substrate despite the short-distance reciprocating motions.
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Abstract
Description
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US14/604,332 US9556514B2 (en) | 2014-02-06 | 2015-01-23 | Spatial deposition of material using short-distance reciprocating motions |
TW104103788A TW201534752A (en) | 2014-02-06 | 2015-02-04 | Spatial deposition of material using short-distance reciprocating motions |
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US201461936554P | 2014-02-06 | 2014-02-06 | |
US14/604,332 US9556514B2 (en) | 2014-02-06 | 2015-01-23 | Spatial deposition of material using short-distance reciprocating motions |
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US9556514B2 true US9556514B2 (en) | 2017-01-31 |
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- 2015-01-23 CN CN201580007281.6A patent/CN106103794B/en not_active Expired - Fee Related
- 2015-01-23 WO PCT/US2015/012739 patent/WO2015119794A1/en active Application Filing
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Also Published As
Publication number | Publication date |
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US20150218698A1 (en) | 2015-08-06 |
KR20160106163A (en) | 2016-09-09 |
WO2015119794A1 (en) | 2015-08-13 |
CN106103794A (en) | 2016-11-09 |
CN106103794B (en) | 2018-02-02 |
KR101828928B1 (en) | 2018-02-13 |
TW201534752A (en) | 2015-09-16 |
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