US8450188B1 - Method of removing back metal from an etched semiconductor scribe street - Google Patents
Method of removing back metal from an etched semiconductor scribe street Download PDFInfo
- Publication number
- US8450188B1 US8450188B1 US13/136,459 US201113136459A US8450188B1 US 8450188 B1 US8450188 B1 US 8450188B1 US 201113136459 A US201113136459 A US 201113136459A US 8450188 B1 US8450188 B1 US 8450188B1
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- US
- United States
- Prior art keywords
- metal layer
- support
- wafer
- semiconductor material
- scribe streets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002184 metal Substances 0.000 title claims abstract description 92
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 92
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 52
- 238000005520 cutting process Methods 0.000 claims abstract description 49
- 239000010410 layer Substances 0.000 claims description 96
- 239000002985 plastic film Substances 0.000 claims description 22
- 229920006255 plastic film Polymers 0.000 claims description 19
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 9
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 51
- 238000005530 etching Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 4
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Definitions
- the metal layer is a base layer and positioned underneath the semiconductor material layer when the wafer is supported by the first support.
- the method includes the step of turning the wafer upside down prior to the step of cutting the metal layer along the scribe streets to position the metal layer above the semiconductor material layer.
- FIG. 2 is a top, perspective view illustrating a second plastic film and frame structure being lowered into position with respect to the wafer, plastic sheet and frame illustrated in FIG. 1 ;
- FIG. 3 is an enlarged, cross-sectional view taken along the line 3 - 3 of FIG. 1 ;
- FIG. 10 is a perspective view of an alternative form of cutting tool which may be employed to cut the metal layer of the wafer
- the wafer 10 , film 30 and frame 28 are then placed on an apparatus of the type disclosed, for example, by Lindsey, et al. (U.S. Pat. No. 6,826,840) that has the ability to align the scribe streets with the direction of travel of a cutting tool, the ability to move a cutting tool rapidly the length of the scribe streets, and the ability to step precisely from scribe street to scribe street.
- Lindsey, et al. U.S. Pat. No. 6,826,840
- FIG. 9 illustrates one suitable form of cutting tool 40 in the form of a non-rotatable blade having a sharp edge 42 with a leading edge portion 44 positioned above the outer surface of the metal layer during the cutting operation.
- the shape of the tool results in no abrupt edges or corners on the tool that might catch on the corner of a die and cause it to be damaged or displaced from its position as the cutting tool passes.
- An alternate cutting tool is a wheel 46 ( FIG. 10 ) with the entire periphery thereof honed to a sharp edge, wheel 46 having the characteristics described above of a leading cutting edge and a trailing cutting edge higher than the cutting edge near the middle of the tool.
- the mode of cutting incorporated in the use of the tool may vary. If the metal layer is composed of a brittle material, the tool is positioned in the etched scribe street to a depth such that the tool penetrates completely through the metal layer but is not intentionally made to touch the sides or top of the etched scribe street ( FIG. 12 ). If the metal layer is composed of a ductile metal, the tool is pressed using a constant force against the corner formed by the top of the wafer and side edge of the etched scribe street as the tool is moved across the wafer in the scribe street ( FIG. 13 ). The force placed on the tool is chosen such that it is sufficient to shear the metal at this edge but not so large that it causes damage to the edge of the semiconductor device.
- Another film (not shown) is mounted on a frame.
- the new film is placed so that it comes in contact with the bottom side of the wafer and the adhesive firmly attaches the bottom side of the wafer to this film.
- This film is chosen for its properties that allow the film to be stretched or expanded to allow the spacing between the die to be increased.
- the assembly is then turned over and exposed to ultraviolet radiation, releasing the wafer from the first UV film and frame.
- the semiconductor wafer, mounted face up on the new frame and film, is now ready for a pick-and-place operation.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
Description
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/136,459 US8450188B1 (en) | 2011-08-02 | 2011-08-02 | Method of removing back metal from an etched semiconductor scribe street |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/136,459 US8450188B1 (en) | 2011-08-02 | 2011-08-02 | Method of removing back metal from an etched semiconductor scribe street |
Publications (1)
Publication Number | Publication Date |
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US8450188B1 true US8450188B1 (en) | 2013-05-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/136,459 Active 2032-01-10 US8450188B1 (en) | 2011-08-02 | 2011-08-02 | Method of removing back metal from an etched semiconductor scribe street |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130248099A1 (en) * | 2012-03-23 | 2013-09-26 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device and substrate separating apparatus |
US8906745B1 (en) | 2013-09-12 | 2014-12-09 | Micro Processing Technology, Inc. | Method using fluid pressure to remove back metal from semiconductor wafer scribe streets |
JP2017162870A (en) * | 2016-03-07 | 2017-09-14 | 日東電工株式会社 | Substrate transfer method and substrate transfer device |
US20180005916A1 (en) * | 2016-06-30 | 2018-01-04 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US9917013B2 (en) | 2014-03-21 | 2018-03-13 | Semiconductor Components Industries, Llc | Method of separating electronic devices having a back layer |
US10056297B1 (en) | 2016-06-20 | 2018-08-21 | Paul C. Lindsey, Jr. | Modified plasma dicing process to improve back metal cleaving |
US10373869B2 (en) | 2017-05-24 | 2019-08-06 | Semiconductor Components Industries, Llc | Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus |
US20200243391A1 (en) * | 2019-01-25 | 2020-07-30 | Semiconductor Components Industries, Llc | Backside metal patterning die singulation system and related methods |
US10796963B2 (en) * | 2019-01-25 | 2020-10-06 | Semiconductor Components Industries, Llc | Backside metal patterning die singulation systems and related methods |
US10872775B2 (en) | 2017-06-05 | 2020-12-22 | Spts Technologies Limited | Methods of plasma etching and plasma dicing |
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-
2011
- 2011-08-02 US US13/136,459 patent/US8450188B1/en active Active
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Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8771456B2 (en) * | 2012-03-23 | 2014-07-08 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device and substrate separating apparatus |
US20130248099A1 (en) * | 2012-03-23 | 2013-09-26 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device and substrate separating apparatus |
US8906745B1 (en) | 2013-09-12 | 2014-12-09 | Micro Processing Technology, Inc. | Method using fluid pressure to remove back metal from semiconductor wafer scribe streets |
US9917013B2 (en) | 2014-03-21 | 2018-03-13 | Semiconductor Components Industries, Llc | Method of separating electronic devices having a back layer |
US10446446B2 (en) | 2014-03-21 | 2019-10-15 | Semiconductor Components Industries, Llc | Method of separating electronic devices having a back layer and apparatus |
US10950503B2 (en) | 2014-03-21 | 2021-03-16 | Semiconductor Components Industries, Llc | Method of separating electronic devices having a back layer and apparatus |
TWI707818B (en) * | 2016-03-07 | 2020-10-21 | 日商日東電工股份有限公司 | Substrate transfer method and substrate transfer apparatus |
JP2017162870A (en) * | 2016-03-07 | 2017-09-14 | 日東電工株式会社 | Substrate transfer method and substrate transfer device |
WO2017154304A1 (en) * | 2016-03-07 | 2017-09-14 | 日東電工株式会社 | Substrate transfer method and substrate transfer device |
CN108713247A (en) * | 2016-03-07 | 2018-10-26 | 日东电工株式会社 | substrate transfer method and substrate transfer device |
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