US8194712B2 - Monolithically integrated laser diode chip having a construction as a multiple beam laser diode - Google Patents
Monolithically integrated laser diode chip having a construction as a multiple beam laser diode Download PDFInfo
- Publication number
- US8194712B2 US8194712B2 US12/217,100 US21710008A US8194712B2 US 8194712 B2 US8194712 B2 US 8194712B2 US 21710008 A US21710008 A US 21710008A US 8194712 B2 US8194712 B2 US 8194712B2
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- US
- United States
- Prior art keywords
- laser diode
- layer
- diode chip
- waveguide
- additional element
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010276 construction Methods 0.000 title claims abstract description 7
- 238000005253 cladding Methods 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 28
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 181
- 230000035882 stress Effects 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 208000010392 Bone Fractures Diseases 0.000 description 2
- 206010017076 Fracture Diseases 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007030062A DE102007030062A1 (en) | 2007-06-29 | 2007-06-29 | Monolithically integrated laser diode chip with a construction as a multi-beam laser diode |
DE102007030062 | 2007-06-29 | ||
DE102007030062.1 | 2007-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20090122823A1 US20090122823A1 (en) | 2009-05-14 |
US8194712B2 true US8194712B2 (en) | 2012-06-05 |
Family
ID=39537107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/217,100 Active 2028-12-04 US8194712B2 (en) | 2007-06-29 | 2008-06-30 | Monolithically integrated laser diode chip having a construction as a multiple beam laser diode |
Country Status (4)
Country | Link |
---|---|
US (1) | US8194712B2 (en) |
EP (1) | EP2009753A1 (en) |
JP (1) | JP5623007B2 (en) |
DE (1) | DE102007030062A1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9360554B2 (en) | 2014-04-11 | 2016-06-07 | Facet Technology Corp. | Methods and apparatus for object detection and identification in a multiple detector lidar array |
US9866816B2 (en) | 2016-03-03 | 2018-01-09 | 4D Intellectual Properties, Llc | Methods and apparatus for an active pulsed 4D camera for image acquisition and analysis |
US10036801B2 (en) | 2015-03-05 | 2018-07-31 | Big Sky Financial Corporation | Methods and apparatus for increased precision and improved range in a multiple detector LiDAR array |
US10203399B2 (en) | 2013-11-12 | 2019-02-12 | Big Sky Financial Corporation | Methods and apparatus for array based LiDAR systems with reduced interference |
US10211370B2 (en) | 2015-09-11 | 2019-02-19 | Azur Space Solar Power Gmbh | Infrared LED |
WO2021133827A2 (en) | 2019-12-24 | 2021-07-01 | Array Photonics, Inc. | Stacked semiconductor lasers with controlled spectral emission |
US11532924B2 (en) * | 2020-07-27 | 2022-12-20 | National Taiwan University | Distributed feedback laser array |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100244099A1 (en) * | 2009-03-31 | 2010-09-30 | Agilent Technolgies, Inc. | Double heterojunction bipolar transistor having graded base region |
JP2022117120A (en) * | 2021-01-29 | 2022-08-10 | 浜松ホトニクス株式会社 | Semiconductor laser element and laser module |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958263A (en) | 1973-11-12 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Stress reduction in algaas-algaasp multilayer structures |
US4984242A (en) * | 1989-09-18 | 1991-01-08 | Spectra Diode Laboratories, Inc. | GaAs/AlGaAs heterostructure laser containing indium |
US5212706A (en) | 1991-12-03 | 1993-05-18 | University Of Connecticut | Laser diode assembly with tunnel junctions and providing multiple beams |
US5617437A (en) | 1994-11-24 | 1997-04-01 | Fuji Photo Film Co., Ltd. | Semiconductor laser |
US5729566A (en) * | 1996-06-07 | 1998-03-17 | Picolight Incorporated | Light emitting device having an electrical contact through a layer containing oxidized material |
US6434179B1 (en) | 1998-01-30 | 2002-08-13 | Siemens Aktiengesellschaft | Semiconductor laser chip |
US6584130B2 (en) | 1999-07-30 | 2003-06-24 | Osram Opto Semiconductors Gmbh & Co. Ohg | Multiple semiconductor laser structure with narrow wavelength distribution |
US20030161369A1 (en) * | 2002-02-28 | 2003-08-28 | Ying-Lan Chang | Long-wavelength photonic device with GaAsSb quantum-well layer |
US6628694B2 (en) * | 2001-04-23 | 2003-09-30 | Agilent Technologies, Inc. | Reliability-enhancing layers for vertical cavity surface emitting lasers |
US6816524B2 (en) * | 2001-09-05 | 2004-11-09 | Fuji Photo Film Co., Ltd. | InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer |
US6956881B2 (en) * | 2000-11-21 | 2005-10-18 | Osram Opto Semiconductors Gmbh | Stacked semiconductor laser diode |
US20070053396A1 (en) | 2005-08-24 | 2007-03-08 | Nlight Photonics Corporation | Semiconductor lasers utilizing AlGaAsP |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263791A (en) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | Semiconductor laser |
JP2001185810A (en) * | 1999-12-24 | 2001-07-06 | Mitsubishi Chemicals Corp | Semiconductor optical device and manufacturing method therefor |
DE102006010728A1 (en) * | 2005-12-05 | 2007-06-06 | Osram Opto Semiconductors Gmbh | Semiconductor component and laser device |
JP4155997B2 (en) * | 2006-03-30 | 2008-09-24 | 株式会社日立製作所 | Semiconductor laser device |
-
2007
- 2007-06-29 DE DE102007030062A patent/DE102007030062A1/en not_active Ceased
-
2008
- 2008-05-23 EP EP08009484A patent/EP2009753A1/en not_active Withdrawn
- 2008-06-26 JP JP2008167248A patent/JP5623007B2/en active Active
- 2008-06-30 US US12/217,100 patent/US8194712B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958263A (en) | 1973-11-12 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Stress reduction in algaas-algaasp multilayer structures |
US4984242A (en) * | 1989-09-18 | 1991-01-08 | Spectra Diode Laboratories, Inc. | GaAs/AlGaAs heterostructure laser containing indium |
US5212706A (en) | 1991-12-03 | 1993-05-18 | University Of Connecticut | Laser diode assembly with tunnel junctions and providing multiple beams |
US5617437A (en) | 1994-11-24 | 1997-04-01 | Fuji Photo Film Co., Ltd. | Semiconductor laser |
US5729566A (en) * | 1996-06-07 | 1998-03-17 | Picolight Incorporated | Light emitting device having an electrical contact through a layer containing oxidized material |
US6434179B1 (en) | 1998-01-30 | 2002-08-13 | Siemens Aktiengesellschaft | Semiconductor laser chip |
US6584130B2 (en) | 1999-07-30 | 2003-06-24 | Osram Opto Semiconductors Gmbh & Co. Ohg | Multiple semiconductor laser structure with narrow wavelength distribution |
US6956881B2 (en) * | 2000-11-21 | 2005-10-18 | Osram Opto Semiconductors Gmbh | Stacked semiconductor laser diode |
US6628694B2 (en) * | 2001-04-23 | 2003-09-30 | Agilent Technologies, Inc. | Reliability-enhancing layers for vertical cavity surface emitting lasers |
US6816524B2 (en) * | 2001-09-05 | 2004-11-09 | Fuji Photo Film Co., Ltd. | InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer |
US20030161369A1 (en) * | 2002-02-28 | 2003-08-28 | Ying-Lan Chang | Long-wavelength photonic device with GaAsSb quantum-well layer |
US20070053396A1 (en) | 2005-08-24 | 2007-03-08 | Nlight Photonics Corporation | Semiconductor lasers utilizing AlGaAsP |
Non-Patent Citations (4)
Title |
---|
Balakrishnan Ganesh et al.: "2.0 mum wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer", Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, Bd. 84, Nr. 12, Mar. 22, 2004, XP012060834 (3 pages). |
Balakrishnan Ganesh et al.: "2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer", Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, Bd. 84, Nr. 12, Mar. 22, 2004, XP012060834 (3 pages). |
Muller M. et al.: "Monolithically stacked high-power diode laser bars in quasi-continuous-wave operation exceeding 500 W", Proceedings of the SPIE, SPI, Bellingham VA, Bd. 6465, Jan. 24, 2007, XP009102517 (8 pages). |
Search Report dated Jul. 4, 2008 issued for the counterpart European Patent Application No. EP 08 00 9484 (9 pages). |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10203399B2 (en) | 2013-11-12 | 2019-02-12 | Big Sky Financial Corporation | Methods and apparatus for array based LiDAR systems with reduced interference |
US11131755B2 (en) | 2013-11-12 | 2021-09-28 | Big Sky Financial Corporation | Methods and apparatus for array based LiDAR systems with reduced interference |
US10585175B2 (en) | 2014-04-11 | 2020-03-10 | Big Sky Financial Corporation | Methods and apparatus for object detection and identification in a multiple detector lidar array |
US11860314B2 (en) | 2014-04-11 | 2024-01-02 | Big Sky Financial Corporation | Methods and apparatus for object detection and identification in a multiple detector lidar array |
US9360554B2 (en) | 2014-04-11 | 2016-06-07 | Facet Technology Corp. | Methods and apparatus for object detection and identification in a multiple detector lidar array |
US10036801B2 (en) | 2015-03-05 | 2018-07-31 | Big Sky Financial Corporation | Methods and apparatus for increased precision and improved range in a multiple detector LiDAR array |
US11226398B2 (en) | 2015-03-05 | 2022-01-18 | Big Sky Financial Corporation | Methods and apparatus for increased precision and improved range in a multiple detector LiDAR array |
US10211370B2 (en) | 2015-09-11 | 2019-02-19 | Azur Space Solar Power Gmbh | Infrared LED |
US10623716B2 (en) | 2016-03-03 | 2020-04-14 | 4D Intellectual Properties, Llc | Object identification and material assessment using optical profiles |
US10873738B2 (en) | 2016-03-03 | 2020-12-22 | 4D Intellectual Properties, Llc | Multi-frame range gating for lighting-invariant depth maps for in-motion applications and attenuating environments |
US10382742B2 (en) | 2016-03-03 | 2019-08-13 | 4D Intellectual Properties, Llc | Methods and apparatus for a lighting-invariant image sensor for automated object detection and vision systems |
US10298908B2 (en) | 2016-03-03 | 2019-05-21 | 4D Intellectual Properties, Llc | Vehicle display system for low visibility objects and adverse environmental conditions |
US11477363B2 (en) | 2016-03-03 | 2022-10-18 | 4D Intellectual Properties, Llc | Intelligent control module for utilizing exterior lighting in an active imaging system |
US11838626B2 (en) | 2016-03-03 | 2023-12-05 | 4D Intellectual Properties, Llc | Methods and apparatus for an active pulsed 4D camera for image acquisition and analysis |
US9866816B2 (en) | 2016-03-03 | 2018-01-09 | 4D Intellectual Properties, Llc | Methods and apparatus for an active pulsed 4D camera for image acquisition and analysis |
WO2021133827A2 (en) | 2019-12-24 | 2021-07-01 | Array Photonics, Inc. | Stacked semiconductor lasers with controlled spectral emission |
US11532924B2 (en) * | 2020-07-27 | 2022-12-20 | National Taiwan University | Distributed feedback laser array |
Also Published As
Publication number | Publication date |
---|---|
JP5623007B2 (en) | 2014-11-12 |
DE102007030062A1 (en) | 2009-01-02 |
EP2009753A1 (en) | 2008-12-31 |
US20090122823A1 (en) | 2009-05-14 |
JP2009016825A (en) | 2009-01-22 |
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Legal Events
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Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MULLER, MARTIN;GRONNINGER, GUNTHER;BEHRES, ALEXANDER;REEL/FRAME:021720/0606;SIGNING DATES FROM 20081002 TO 20081007 Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MULLER, MARTIN;GRONNINGER, GUNTHER;BEHRES, ALEXANDER;SIGNING DATES FROM 20081002 TO 20081007;REEL/FRAME:021720/0606 |
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