US7806077B2 - Plasma nozzle array for providing uniform scalable microwave plasma generation - Google Patents
Plasma nozzle array for providing uniform scalable microwave plasma generation Download PDFInfo
- Publication number
- US7806077B2 US7806077B2 US10/902,435 US90243504A US7806077B2 US 7806077 B2 US7806077 B2 US 7806077B2 US 90243504 A US90243504 A US 90243504A US 7806077 B2 US7806077 B2 US 7806077B2
- Authority
- US
- United States
- Prior art keywords
- microwave
- microwaves
- microwave cavity
- gas flow
- flow tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004020 conductor Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000003491 array Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 94
- 210000002381 plasma Anatomy 0.000 description 72
- 230000001954 sterilising effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000004659 sterilization and disinfection Methods 0.000 description 11
- 241000894007 species Species 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001580 bacterial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012567 medical material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000000813 microbial effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/4622—Microwave discharges using waveguides
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
- A61L2/02—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
- A61L2/14—Plasma, i.e. ionised gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Epidemiology (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Apparatus For Disinfection Or Sterilisation (AREA)
Abstract
Description
Claims (19)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/902,435 US7806077B2 (en) | 2004-07-30 | 2004-07-30 | Plasma nozzle array for providing uniform scalable microwave plasma generation |
RU2007107371/28A RU2342734C2 (en) | 2004-07-30 | 2005-07-21 | Plasma nozzle array for generating homogenous expanding microwave plasma |
CA002574114A CA2574114A1 (en) | 2004-07-30 | 2005-07-21 | Plasma nozzle array for providing uniform scalable microwave plasma generation |
CN2005800250650A CN101066000B (en) | 2004-07-30 | 2005-07-21 | Plasma nozzle array for providing uniform scalable microwave plasma generation |
JP2007523689A JP4896880B2 (en) | 2004-07-30 | 2005-07-21 | Method for constructing microwave plasma nozzle array, microwave plasma nozzle array unit and microwave plasma system |
KR1020077002194A KR100871475B1 (en) | 2004-07-30 | 2005-07-21 | Microwave plasma nozzle array unit, method for configuring nozzle array and microwave plasma system, for providing uniform scalable microwave plasma generation |
EP05773639A EP1790201B1 (en) | 2004-07-30 | 2005-07-21 | Plasma nozzle array for providing uniform scalable microwave plasma generation |
AU2005269581A AU2005269581B2 (en) | 2004-07-30 | 2005-07-21 | Plasma nozzle array for providing uniform scalable microwave plasma generation |
DE602005026300T DE602005026300D1 (en) | 2004-07-30 | 2005-07-21 | PLASMASTER GROUP FOR PROVIDING AN EQUAL |
PCT/US2005/026280 WO2006014862A2 (en) | 2004-07-30 | 2005-07-21 | Plasma nozzle array for providing uniform scalable microwave plasma generation |
US11/658,356 US20080073202A1 (en) | 2004-07-30 | 2005-07-21 | Plasma Nozzle Array for Providing Uniform Scalable Microwave Plasma Generation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/902,435 US7806077B2 (en) | 2004-07-30 | 2004-07-30 | Plasma nozzle array for providing uniform scalable microwave plasma generation |
Publications (2)
Publication Number | Publication Date |
---|---|
US20060021581A1 US20060021581A1 (en) | 2006-02-02 |
US7806077B2 true US7806077B2 (en) | 2010-10-05 |
Family
ID=35197707
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/902,435 Active US7806077B2 (en) | 2004-07-30 | 2004-07-30 | Plasma nozzle array for providing uniform scalable microwave plasma generation |
US11/658,356 Abandoned US20080073202A1 (en) | 2004-07-30 | 2005-07-21 | Plasma Nozzle Array for Providing Uniform Scalable Microwave Plasma Generation |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/658,356 Abandoned US20080073202A1 (en) | 2004-07-30 | 2005-07-21 | Plasma Nozzle Array for Providing Uniform Scalable Microwave Plasma Generation |
Country Status (10)
Country | Link |
---|---|
US (2) | US7806077B2 (en) |
EP (1) | EP1790201B1 (en) |
JP (1) | JP4896880B2 (en) |
KR (1) | KR100871475B1 (en) |
CN (1) | CN101066000B (en) |
AU (1) | AU2005269581B2 (en) |
CA (1) | CA2574114A1 (en) |
DE (1) | DE602005026300D1 (en) |
RU (1) | RU2342734C2 (en) |
WO (1) | WO2006014862A2 (en) |
Cited By (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100074810A1 (en) * | 2008-09-23 | 2010-03-25 | Sang Hun Lee | Plasma generating system having tunable plasma nozzle |
US20100330300A1 (en) * | 2008-01-30 | 2010-12-30 | Stowell Michael W | System and method for pre-ionization of surface wave launched plasma discharge sources |
US9067273B1 (en) * | 2012-05-17 | 2015-06-30 | Clemson University | High density atmospheric plasma jet devices by jet-to-jet interaction |
US9472417B2 (en) | 2013-11-12 | 2016-10-18 | Applied Materials, Inc. | Plasma-free metal etch |
US9472412B2 (en) | 2013-12-02 | 2016-10-18 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9478432B2 (en) | 2014-09-25 | 2016-10-25 | Applied Materials, Inc. | Silicon oxide selective removal |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9564296B2 (en) * | 2014-03-20 | 2017-02-07 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9607856B2 (en) | 2013-03-05 | 2017-03-28 | Applied Materials, Inc. | Selective titanium nitride removal |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9659792B2 (en) | 2013-03-15 | 2017-05-23 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9754800B2 (en) | 2010-05-27 | 2017-09-05 | Applied Materials, Inc. | Selective etch for silicon films |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9842744B2 (en) | 2011-03-14 | 2017-12-12 | Applied Materials, Inc. | Methods for etch of SiN films |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9885117B2 (en) | 2014-03-31 | 2018-02-06 | Applied Materials, Inc. | Conditioned semiconductor system parts |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9978564B2 (en) | 2012-09-21 | 2018-05-22 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10032606B2 (en) | 2012-08-02 | 2018-07-24 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10062578B2 (en) | 2011-03-14 | 2018-08-28 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10062587B2 (en) | 2012-07-18 | 2018-08-28 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10424464B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
US10465294B2 (en) | 2014-05-28 | 2019-11-05 | Applied Materials, Inc. | Oxide and metal removal |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11273491B2 (en) | 2018-06-19 | 2022-03-15 | 6K Inc. | Process for producing spheroidized powder from feedstock materials |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11311938B2 (en) | 2019-04-30 | 2022-04-26 | 6K Inc. | Mechanically alloyed powder feedstock |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11577314B2 (en) | 2015-12-16 | 2023-02-14 | 6K Inc. | Spheroidal titanium metallic powders with custom microstructures |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US11590568B2 (en) | 2019-12-19 | 2023-02-28 | 6K Inc. | Process for producing spheroidized powder from feedstock materials |
US11611130B2 (en) | 2019-04-30 | 2023-03-21 | 6K Inc. | Lithium lanthanum zirconium oxide (LLZO) powder |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11717886B2 (en) | 2019-11-18 | 2023-08-08 | 6K Inc. | Unique feedstocks for spherical powders and methods of manufacturing |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US11839919B2 (en) | 2015-12-16 | 2023-12-12 | 6K Inc. | Spheroidal dehydrogenated metals and metal alloy particles |
US11855278B2 (en) | 2020-06-25 | 2023-12-26 | 6K, Inc. | Microcomposite alloy structure |
US11919071B2 (en) | 2020-10-30 | 2024-03-05 | 6K Inc. | Systems and methods for synthesis of spheroidized metal powders |
US11963287B2 (en) | 2020-09-24 | 2024-04-16 | 6K Inc. | Systems, devices, and methods for starting plasma |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7164095B2 (en) * | 2004-07-07 | 2007-01-16 | Noritsu Koki Co., Ltd. | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
US7271363B2 (en) * | 2004-09-01 | 2007-09-18 | Noritsu Koki Co., Ltd. | Portable microwave plasma systems including a supply line for gas and microwaves |
US20060052883A1 (en) * | 2004-09-08 | 2006-03-09 | Lee Sang H | System and method for optimizing data acquisition of plasma using a feedback control module |
KR101022507B1 (en) * | 2006-01-30 | 2011-03-16 | 사이안 가부시키가이샤 | Work processing system and plasma generating apparatus |
JP2007220479A (en) * | 2006-02-16 | 2007-08-30 | Noritsu Koki Co Ltd | Work processing device and plasma generator |
JP2007220480A (en) * | 2006-02-16 | 2007-08-30 | Noritsu Koki Co Ltd | Plasma generator and workpiece treatment device |
JP2007220499A (en) * | 2006-02-17 | 2007-08-30 | Noritsu Koki Co Ltd | Plasma generator and workpiece treatment device using the same |
JP4837394B2 (en) * | 2006-02-17 | 2011-12-14 | 株式会社サイアン | Plasma generating apparatus and work processing apparatus using the same |
JP4680091B2 (en) * | 2006-02-23 | 2011-05-11 | 株式会社サイアン | Plasma generator and work processing apparatus |
JP4647566B2 (en) * | 2006-08-30 | 2011-03-09 | 株式会社サイアン | Plasma generating apparatus and work processing apparatus using the same |
TW200742506A (en) * | 2006-02-17 | 2007-11-01 | Noritsu Koki Co Ltd | Plasma generation apparatus and work process apparatus |
JP4699235B2 (en) * | 2006-02-20 | 2011-06-08 | 株式会社サイアン | Plasma generating apparatus and work processing apparatus using the same |
JP2007220589A (en) * | 2006-02-20 | 2007-08-30 | Noritsu Koki Co Ltd | Plasma generation nozzle, plasma generator, and workpiece treatment device used for the same |
JP2007227069A (en) * | 2006-02-22 | 2007-09-06 | Noritsu Koki Co Ltd | Method and device for generating plasma, and workpiece treatment device using the same |
JP2007227071A (en) * | 2006-02-22 | 2007-09-06 | Noritsu Koki Co Ltd | Plasma generating device and workpiece processing device using same |
JP2007227201A (en) * | 2006-02-24 | 2007-09-06 | Noritsu Koki Co Ltd | Plasma generating device and workpiece treatment device |
JP4619966B2 (en) * | 2006-02-27 | 2011-01-26 | 株式会社サイアン | Work processing device |
JP4525929B2 (en) * | 2006-02-28 | 2010-08-18 | ノーリツ鋼機株式会社 | Work processing device |
JP4724572B2 (en) * | 2006-02-28 | 2011-07-13 | 株式会社サイアン | Work processing device |
JP4680095B2 (en) * | 2006-02-28 | 2011-05-11 | 株式会社サイアン | Work processing apparatus and plasma generating apparatus |
JP4619967B2 (en) * | 2006-02-28 | 2011-01-26 | 株式会社サイアン | Work processing device |
JP4619973B2 (en) * | 2006-03-29 | 2011-01-26 | 株式会社サイアン | Plasma generating apparatus and work processing apparatus using the same |
JP4724625B2 (en) * | 2006-08-30 | 2011-07-13 | 株式会社サイアン | Plasma generating apparatus and work processing apparatus using the same |
TW200816881A (en) * | 2006-08-30 | 2008-04-01 | Noritsu Koki Co Ltd | Plasma generation apparatus and workpiece processing apparatus using the same |
JP4620015B2 (en) * | 2006-08-30 | 2011-01-26 | 株式会社サイアン | Plasma generating apparatus and work processing apparatus using the same |
JP2008066059A (en) * | 2006-09-06 | 2008-03-21 | Noritsu Koki Co Ltd | Plasma generating device and work treatment device using it |
JP2008066058A (en) * | 2006-09-06 | 2008-03-21 | Noritsu Koki Co Ltd | Plasma generation nozzle, plasma generating device, and work treatment device using it |
JP2008066159A (en) * | 2006-09-08 | 2008-03-21 | Noritsu Koki Co Ltd | Plasma generator and workpiece treatment device using it |
JP2008071500A (en) * | 2006-09-12 | 2008-03-27 | Noritsu Koki Co Ltd | Plasma generating device and work processing device using it |
TW200830945A (en) * | 2006-09-13 | 2008-07-16 | Noritsu Koki Co Ltd | Plasma generator and work processing apparatus provided with the same |
JP4629068B2 (en) * | 2007-05-25 | 2011-02-09 | 株式会社サイアン | Work processing device |
JP4719184B2 (en) * | 2007-06-01 | 2011-07-06 | 株式会社サイアン | Atmospheric pressure plasma generator and work processing apparatus using the same |
KR20080111801A (en) * | 2007-06-20 | 2008-12-24 | 삼성전자주식회사 | Plasma processing apparatus and method thereof |
GB0718721D0 (en) | 2007-09-25 | 2007-11-07 | Medical Device Innovations Ltd | Surgical resection apparatus |
ES2688300T3 (en) * | 2007-11-06 | 2018-10-31 | Creo Medical Limited | Applicator for plasma sterilization by microwave |
GB2454461B (en) * | 2007-11-06 | 2012-11-14 | Creo Medical Ltd | A system to treat and/or kill bacteria and viral infections using microwave atmospheric plasma |
WO2009060214A1 (en) * | 2007-11-06 | 2009-05-14 | Microoncology Limited | Hydroxyl radical producing plasma sterilisation apparatus |
GB2464501A (en) * | 2008-10-17 | 2010-04-21 | Microoncology Ltd | Plasma Applicators for Sterilisation |
GB2459461B (en) * | 2008-04-23 | 2012-08-01 | Creo Medical Ltd | A non-thermal microwave plasma sterilisation system using automatic tuning contained within the hand-piece of the applicator |
US7921804B2 (en) * | 2008-12-08 | 2011-04-12 | Amarante Technologies, Inc. | Plasma generating nozzle having impedance control mechanism |
US20100201272A1 (en) * | 2009-02-09 | 2010-08-12 | Sang Hun Lee | Plasma generating system having nozzle with electrical biasing |
US20100254853A1 (en) * | 2009-04-06 | 2010-10-07 | Sang Hun Lee | Method of sterilization using plasma generated sterilant gas |
WO2010129277A2 (en) | 2009-04-28 | 2010-11-11 | Trustees Of Tufts College | Microplasma generator and methods therefor |
JP2012089334A (en) * | 2010-10-19 | 2012-05-10 | Tokyo Electron Ltd | Microwave plasma source and plasma processing apparatus |
US20120326803A1 (en) * | 2011-06-24 | 2012-12-27 | Amarante Technologies, Inc. | Microwave resonant cavity |
WO2013016497A2 (en) | 2011-07-28 | 2013-01-31 | Trustees Of Tufts College | Microplasma generating array |
WO2013119313A2 (en) * | 2011-12-09 | 2013-08-15 | Trustees Of Tufts College | Microplasma generator with array of tapered microstrips |
JP6255590B2 (en) * | 2011-12-28 | 2018-01-10 | イマジニアリング株式会社 | Plasma gas generator |
ES2489292B1 (en) * | 2013-02-18 | 2015-03-06 | Tridogen S L | Procedure of supplying energy to a corresponding material and device |
JP5725574B2 (en) * | 2013-03-05 | 2015-05-27 | 東京エレクトロン株式会社 | Microwave waveguide device, plasma processing apparatus, and plasma processing method |
TWI568317B (en) * | 2013-03-15 | 2017-01-21 | 東京威力科創股份有限公司 | Plasma tuning rods in microwave resonator processing systems |
CN104726850B (en) * | 2013-12-23 | 2017-08-25 | 朱雨 | A kind of microwave plasma CVD equipment |
US9627167B2 (en) | 2014-02-25 | 2017-04-18 | Electronics And Telecommunications Research Institute | Apparatus for generating plasma |
CN106061090B (en) * | 2016-05-31 | 2019-03-12 | 吉林大学 | A kind of secondary coupled microwave plasma reformer |
CN105979693A (en) * | 2016-06-12 | 2016-09-28 | 浙江大学 | High-power microwave plasma generation device |
KR102137913B1 (en) * | 2019-10-29 | 2020-07-24 | 주식회사 기가레인 | Plasma antenna module |
CN112996209B (en) * | 2021-05-07 | 2021-08-10 | 四川大学 | Structure and array structure for microwave excitation of atmospheric pressure plasma jet |
Citations (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB792085A (en) * | 1954-09-27 | 1958-03-19 | Alca France Ets | Improvements in or relating to devices for packing and unpacking bottles to and frombottle-racks and the like |
US3353060A (en) * | 1964-11-28 | 1967-11-14 | Hitachi Ltd | High-frequency discharge plasma generator with an auxiliary electrode |
US3417287A (en) * | 1965-10-08 | 1968-12-17 | Hitachi Ltd | Low power high frequency discharge plasma generator |
US4185213A (en) * | 1977-08-31 | 1980-01-22 | Reynolds Metals Company | Gaseous electrode for MHD generator |
US4207286A (en) | 1978-03-16 | 1980-06-10 | Biophysics Research & Consulting Corporation | Seeded gas plasma sterilization method |
US4378806A (en) * | 1980-08-12 | 1983-04-05 | Henley Cohn Julian L | Gapped resonant microwave apparatus for producing hyperthermia therapy of tumors |
JPS6350478A (en) | 1986-08-21 | 1988-03-03 | Tokyo Gas Co Ltd | Formation of thin film |
US4976920A (en) | 1987-07-14 | 1990-12-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
JPH0370375A (en) | 1989-08-10 | 1991-03-26 | Sanyo Electric Co Ltd | Driving method for solid-stage pickup element |
JPH03241739A (en) | 1988-08-15 | 1991-10-28 | Res Dev Corp Of Japan | Atmospheric pressure plasma reaction method |
US5084239A (en) | 1990-08-31 | 1992-01-28 | Abtox, Inc. | Plasma sterilizing process with pulsed antimicrobial agent treatment |
US5170098A (en) | 1989-10-18 | 1992-12-08 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus for use in carrying out the same |
US5188862A (en) * | 1989-09-26 | 1993-02-23 | Idemitsu Petrochemical Company Limited | Microwave plasma generating apparatus and process for the preparation of diamond thin film utilizing same |
JPH0582449A (en) | 1991-09-20 | 1993-04-02 | Mitsubishi Heavy Ind Ltd | Electron cycrotron resonance plasma cvd equipment |
JPH05275191A (en) | 1992-03-24 | 1993-10-22 | Semiconductor Energy Lab Co Ltd | Atmospheric pressure discharge method |
JPH065384A (en) | 1992-06-17 | 1994-01-14 | Hitachi Ltd | Torch tube for generation of microwave plasma |
DE4408301A1 (en) | 1993-03-12 | 1994-09-15 | Sando Iron Works Co | Device for sterilising the interior of a container |
JPH0740056A (en) | 1993-07-28 | 1995-02-10 | Komatsu Ltd | Plasma torch |
JPH07153593A (en) | 1993-12-01 | 1995-06-16 | Daido Steel Co Ltd | Microwave plasma treating device |
US5449412A (en) * | 1991-12-17 | 1995-09-12 | Crystallume | Apparatus and method for controlling plasma size and position in plasma-activated chemical vapor deposition processes |
US5503676A (en) | 1994-09-19 | 1996-04-02 | Lam Research Corporation | Apparatus and method for magnetron in-situ cleaning of plasma reaction chamber |
JPH08508362A (en) | 1992-12-17 | 1996-09-03 | フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー.ファオ. | Method for performing a stable low pressure glow process |
US5565118A (en) * | 1994-04-04 | 1996-10-15 | Asquith; Joseph G. | Self starting plasma plume igniter for aircraft jet engine |
US5573682A (en) | 1995-04-20 | 1996-11-12 | Plasma Processes | Plasma spray nozzle with low overspray and collimated flow |
JPH08319553A (en) | 1995-02-14 | 1996-12-03 | General Electric Co <Ge> | Plasma coating method improved in adhesion of coating film to substrate |
US5741460A (en) | 1995-06-07 | 1998-04-21 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US5750072A (en) | 1995-08-14 | 1998-05-12 | Sangster; Bruce | Sterilization by magnetic field stimulation of a mist or vapor |
WO1998035618A1 (en) | 1997-02-15 | 1998-08-20 | Helica Instruments Limited | Medical apparatus for generating an ionised gas plasma flame |
US5825485A (en) | 1995-11-03 | 1998-10-20 | Cohn; Daniel R. | Compact trace element sensor which utilizes microwave generated plasma and which is portable by an individual |
US5843236A (en) * | 1994-09-16 | 1998-12-01 | Daihen Corporation | Plasma processing apparatus for radiating microwave from rectangular waveguide through long slot to plasma chamber |
JPH118093A (en) | 1997-06-17 | 1999-01-12 | Yokogawa Electric Corp | Microwave induction plasma ignition device |
JPH1121496A (en) | 1997-06-30 | 1999-01-26 | Nippon Shokubai Co Ltd | Material for forming protective membrane and temporarily protecting treatment of base material |
WO1999004606A2 (en) | 1997-07-14 | 1999-01-28 | Lam Research Corporation | Compact microwave downstream plasma system |
US5869401A (en) | 1996-12-20 | 1999-02-09 | Lam Research Corporation | Plasma-enhanced flash process |
US5928527A (en) | 1996-04-15 | 1999-07-27 | The Boeing Company | Surface modification using an atmospheric pressure glow discharge plasma source |
US5938854A (en) | 1993-05-28 | 1999-08-17 | The University Of Tennessee Research Corporation | Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure |
JPH11224795A (en) | 1998-02-10 | 1999-08-17 | Shin Seiki:Kk | Method and apparatus for generating plasma, plasma-applied surface treatment method and gas treatment method |
US5961921A (en) | 1996-04-04 | 1999-10-05 | Johnson & Johnson Medical, Inc. | Method of sterilization in diffusion restricted environments |
US5977715A (en) | 1995-12-14 | 1999-11-02 | The Boeing Company | Handheld atmospheric pressure glow discharge plasma source |
US5980768A (en) | 1997-03-07 | 1999-11-09 | Lam Research Corp. | Methods and apparatus for removing photoresist mask defects in a plasma reactor |
US6017825A (en) | 1996-03-29 | 2000-01-25 | Lam Research Corporation | Etch rate loading improvement |
US6016766A (en) | 1997-12-29 | 2000-01-25 | Lam Research Corporation | Microwave plasma processor |
JP2000150484A (en) | 1998-11-11 | 2000-05-30 | Chemitoronics Co Ltd | Plasma etching device and etching method |
JP2000353689A (en) | 1999-06-10 | 2000-12-19 | Nec Yamagata Ltd | Dry etching system and dry etching method |
US6165910A (en) | 1997-12-29 | 2000-12-26 | Lam Research Corporation | Self-aligned contacts for semiconductor device |
US6170668B1 (en) | 1998-05-01 | 2001-01-09 | Mse Technology Applications, Inc. | Apparatus for extraction of contaminants from a gas |
WO2001006402A1 (en) | 1999-07-20 | 2001-01-25 | Tokyo Electron Limited | Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma |
WO2001006268A1 (en) | 1999-07-20 | 2001-01-25 | Tokyo Electron Limited | Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator |
JP2001054556A (en) | 1999-08-18 | 2001-02-27 | Shikoku Kakoki Co Ltd | Atmospheric pressure low-temperature plasma sterilization method |
US6200651B1 (en) | 1997-06-30 | 2001-03-13 | Lam Research Corporation | Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source |
US6209551B1 (en) | 1997-06-11 | 2001-04-03 | Lam Research Corporation | Methods and compositions for post-etch layer stack treatment in semiconductor fabrication |
US6221792B1 (en) | 1997-06-24 | 2001-04-24 | Lam Research Corporation | Metal and metal silicide nitridization in a high density, low pressure plasma reactor |
US6228330B1 (en) | 1999-06-08 | 2001-05-08 | The Regents Of The University Of California | Atmospheric-pressure plasma decontamination/sterilization chamber |
US6235640B1 (en) | 1998-09-01 | 2001-05-22 | Lam Research Corporation | Techniques for forming contact holes through to a silicon layer of a substrate |
WO2001043512A1 (en) | 1999-12-09 | 2001-06-14 | Agrodyn Hochspannungstechnik Gmbh | Plasma nozzle |
JP2001281284A (en) | 2000-03-30 | 2001-10-10 | Makoto Hirano | Nondestructive measuring instrument for complex dielectric constant |
US6309979B1 (en) | 1996-12-18 | 2001-10-30 | Lam Research Corporation | Methods for reducing plasma-induced charging damage |
US6337277B1 (en) | 2000-06-28 | 2002-01-08 | Lam Research Corporation | Clean chemistry low-k organic polymer etch |
US6363882B1 (en) | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
US6410451B2 (en) | 1999-09-27 | 2002-06-25 | Lam Research Corporation | Techniques for improving etching in a plasma processing chamber |
US6441554B1 (en) | 2000-11-28 | 2002-08-27 | Se Plasma Inc. | Apparatus for generating low temperature plasma at atmospheric pressure |
US20030000823A1 (en) * | 2001-06-15 | 2003-01-02 | Uhm Han Sup | Emission control for perfluorocompound gases by microwave plasma torch |
JP2003135571A (en) | 2001-11-07 | 2003-05-13 | Toshiba Corp | Plasma sterilization apparatus |
US6573731B1 (en) | 1999-07-20 | 2003-06-03 | Tokyo Electron Limited | Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator |
DE10164120A1 (en) | 2001-12-24 | 2003-07-03 | Pierre Flecher | Method for sterilization plastic bottles using microwave plasma comprises introduction of the bottles into a vacuum container made of metal and production of plasma by means of a plasma head |
JP2003210556A (en) | 2002-01-18 | 2003-07-29 | Toshiba Corp | Pipe sterilizer with plasma |
US6635997B2 (en) * | 1998-10-23 | 2003-10-21 | Mitsubishi Heavy Industries, Ltd. | Microwave plasma generator, method of decomposing organic halide, and system for decomposing organic halide |
US6652709B1 (en) * | 1999-11-02 | 2003-11-25 | Canon Kabushiki Kaisha | Plasma processing apparatus having circular waveguide, and plasma processing method |
JP2004045262A (en) | 2002-07-12 | 2004-02-12 | Aet Japan:Kk | Method for measuring complex dielectric constant using resonator, and instrument for executing the method |
US6696662B2 (en) * | 2000-05-25 | 2004-02-24 | Advanced Energy Industries, Inc. | Methods and apparatus for plasma processing |
US6727148B1 (en) | 1998-06-30 | 2004-04-27 | Lam Research Corporation | ULSI MOS with high dielectric constant gate insulator |
US6792742B2 (en) | 2002-09-09 | 2004-09-21 | Phoenix Closures, Inc. | Method for storing and/or transporting items |
US20050127068A1 (en) * | 2003-09-08 | 2005-06-16 | Washington State University Research Foundation | Apparatus and method for heating objects with microwaves |
US7164095B2 (en) * | 2004-07-07 | 2007-01-16 | Noritsu Koki Co., Ltd. | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01161600A (en) * | 1987-12-18 | 1989-06-26 | Oki Electric Ind Co Ltd | Vehicle drive supporting device |
JPH0633679Y2 (en) * | 1988-05-02 | 1994-08-31 | 株式会社三社電機製作所 | Torch for induction plasma |
JPH01299777A (en) * | 1988-05-24 | 1989-12-04 | Komatsu Ltd | Structure of plasma torch |
US5083004A (en) * | 1989-05-09 | 1992-01-21 | Varian Associates, Inc. | Spectroscopic plasma torch for microwave induced plasmas |
JPH0470136A (en) * | 1990-07-11 | 1992-03-05 | Fujitsu Ltd | Signaling transmission control system |
US5111111A (en) * | 1990-09-27 | 1992-05-05 | Consortium For Surface Processing, Inc. | Method and apparatus for coupling a microwave source in an electron cyclotron resonance system |
JPH084103Y2 (en) * | 1990-10-24 | 1996-02-07 | 新日本無線株式会社 | Microwave plasma equipment |
DE4037091C2 (en) * | 1990-11-22 | 1996-06-20 | Leybold Ag | Device for generating a homogeneous microwave field |
JP3129814B2 (en) * | 1992-01-17 | 2001-01-31 | 新日本無線株式会社 | Microwave plasma device |
JP3158715B2 (en) * | 1992-03-30 | 2001-04-23 | 株式会社ダイヘン | Plasma processing equipment |
EP0578047B1 (en) * | 1992-06-23 | 1998-05-13 | Nippon Telegraph And Telephone Corporation | Plasma processing apparatus |
JP3149002B2 (en) * | 1992-12-18 | 2001-03-26 | 和夫 杉山 | Coaxial microwave plasma generator |
US5793013A (en) * | 1995-06-07 | 1998-08-11 | Physical Sciences, Inc. | Microwave-driven plasma spraying apparatus and method for spraying |
CZ147698A3 (en) * | 1998-05-12 | 2000-03-15 | Přírodovědecká Fakulta Masarykovy Univerzity | Method of making physically and chemically active medium by making use of plasma nozzle and the plasma nozzle per se |
JP2000192244A (en) * | 1998-10-16 | 2000-07-11 | Canon Inc | Device and method for forming deposited film |
JP2000260596A (en) * | 1999-03-11 | 2000-09-22 | Hitachi Ltd | Plasma apparatus |
KR19990068381A (en) * | 1999-05-11 | 1999-09-06 | 허방욱 | microwave plasma burner |
FR2798552B1 (en) * | 1999-09-13 | 2001-11-30 | Centre Nat Rech Scient | DEVICE FOR PROVIDING A PREDETERMINED MICROWAVE POWER DIVISION ON A PLURALITY OF LOADS, PARTICULARLY FOR THE PRODUCTION OF PLASMA |
JP2002100499A (en) * | 2000-09-25 | 2002-04-05 | Shibaura Mechatronics Corp | Plasma processing apparatus |
JP4020679B2 (en) * | 2002-04-09 | 2007-12-12 | シャープ株式会社 | Plasma process equipment |
JP2003318689A (en) * | 2002-04-23 | 2003-11-07 | Kanazawa Inst Of Technology | Matching circuit and reflected wave detecting circuit |
JP4103565B2 (en) * | 2002-11-29 | 2008-06-18 | 松下電工株式会社 | Surface treatment apparatus and surface treatment method |
US20040173316A1 (en) * | 2003-03-07 | 2004-09-09 | Carr Jeffrey W. | Apparatus and method using a microwave source for reactive atom plasma processing |
KR101022507B1 (en) * | 2006-01-30 | 2011-03-16 | 사이안 가부시키가이샤 | Work processing system and plasma generating apparatus |
-
2004
- 2004-07-30 US US10/902,435 patent/US7806077B2/en active Active
-
2005
- 2005-07-21 DE DE602005026300T patent/DE602005026300D1/en active Active
- 2005-07-21 KR KR1020077002194A patent/KR100871475B1/en not_active IP Right Cessation
- 2005-07-21 US US11/658,356 patent/US20080073202A1/en not_active Abandoned
- 2005-07-21 CN CN2005800250650A patent/CN101066000B/en not_active Expired - Fee Related
- 2005-07-21 CA CA002574114A patent/CA2574114A1/en not_active Abandoned
- 2005-07-21 RU RU2007107371/28A patent/RU2342734C2/en not_active IP Right Cessation
- 2005-07-21 JP JP2007523689A patent/JP4896880B2/en not_active Expired - Fee Related
- 2005-07-21 EP EP05773639A patent/EP1790201B1/en not_active Not-in-force
- 2005-07-21 WO PCT/US2005/026280 patent/WO2006014862A2/en active Application Filing
- 2005-07-21 AU AU2005269581A patent/AU2005269581B2/en not_active Ceased
Patent Citations (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB792085A (en) * | 1954-09-27 | 1958-03-19 | Alca France Ets | Improvements in or relating to devices for packing and unpacking bottles to and frombottle-racks and the like |
US3353060A (en) * | 1964-11-28 | 1967-11-14 | Hitachi Ltd | High-frequency discharge plasma generator with an auxiliary electrode |
US3417287A (en) * | 1965-10-08 | 1968-12-17 | Hitachi Ltd | Low power high frequency discharge plasma generator |
US4185213A (en) * | 1977-08-31 | 1980-01-22 | Reynolds Metals Company | Gaseous electrode for MHD generator |
US4207286A (en) | 1978-03-16 | 1980-06-10 | Biophysics Research & Consulting Corporation | Seeded gas plasma sterilization method |
US4378806A (en) * | 1980-08-12 | 1983-04-05 | Henley Cohn Julian L | Gapped resonant microwave apparatus for producing hyperthermia therapy of tumors |
JPS6350478A (en) | 1986-08-21 | 1988-03-03 | Tokyo Gas Co Ltd | Formation of thin film |
US4976920A (en) | 1987-07-14 | 1990-12-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
JPH03241739A (en) | 1988-08-15 | 1991-10-28 | Res Dev Corp Of Japan | Atmospheric pressure plasma reaction method |
JPH0370375A (en) | 1989-08-10 | 1991-03-26 | Sanyo Electric Co Ltd | Driving method for solid-stage pickup element |
US5188862A (en) * | 1989-09-26 | 1993-02-23 | Idemitsu Petrochemical Company Limited | Microwave plasma generating apparatus and process for the preparation of diamond thin film utilizing same |
US5170098A (en) | 1989-10-18 | 1992-12-08 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus for use in carrying out the same |
US5084239A (en) | 1990-08-31 | 1992-01-28 | Abtox, Inc. | Plasma sterilizing process with pulsed antimicrobial agent treatment |
JPH0582449A (en) | 1991-09-20 | 1993-04-02 | Mitsubishi Heavy Ind Ltd | Electron cycrotron resonance plasma cvd equipment |
US5449412A (en) * | 1991-12-17 | 1995-09-12 | Crystallume | Apparatus and method for controlling plasma size and position in plasma-activated chemical vapor deposition processes |
JPH05275191A (en) | 1992-03-24 | 1993-10-22 | Semiconductor Energy Lab Co Ltd | Atmospheric pressure discharge method |
JPH065384A (en) | 1992-06-17 | 1994-01-14 | Hitachi Ltd | Torch tube for generation of microwave plasma |
JPH08508362A (en) | 1992-12-17 | 1996-09-03 | フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー.ファオ. | Method for performing a stable low pressure glow process |
DE4408301A1 (en) | 1993-03-12 | 1994-09-15 | Sando Iron Works Co | Device for sterilising the interior of a container |
JPH06263120A (en) | 1993-03-12 | 1994-09-20 | Sando Iron Works Co Ltd | Sterilizer of inside of container |
US5938854A (en) | 1993-05-28 | 1999-08-17 | The University Of Tennessee Research Corporation | Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure |
JPH0740056A (en) | 1993-07-28 | 1995-02-10 | Komatsu Ltd | Plasma torch |
JPH07153593A (en) | 1993-12-01 | 1995-06-16 | Daido Steel Co Ltd | Microwave plasma treating device |
US5565118A (en) * | 1994-04-04 | 1996-10-15 | Asquith; Joseph G. | Self starting plasma plume igniter for aircraft jet engine |
US5843236A (en) * | 1994-09-16 | 1998-12-01 | Daihen Corporation | Plasma processing apparatus for radiating microwave from rectangular waveguide through long slot to plasma chamber |
US5503676A (en) | 1994-09-19 | 1996-04-02 | Lam Research Corporation | Apparatus and method for magnetron in-situ cleaning of plasma reaction chamber |
JPH08319553A (en) | 1995-02-14 | 1996-12-03 | General Electric Co <Ge> | Plasma coating method improved in adhesion of coating film to substrate |
US5573682A (en) | 1995-04-20 | 1996-11-12 | Plasma Processes | Plasma spray nozzle with low overspray and collimated flow |
US5741460A (en) | 1995-06-07 | 1998-04-21 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US5750072A (en) | 1995-08-14 | 1998-05-12 | Sangster; Bruce | Sterilization by magnetic field stimulation of a mist or vapor |
US5825485A (en) | 1995-11-03 | 1998-10-20 | Cohn; Daniel R. | Compact trace element sensor which utilizes microwave generated plasma and which is portable by an individual |
US5977715A (en) | 1995-12-14 | 1999-11-02 | The Boeing Company | Handheld atmospheric pressure glow discharge plasma source |
US6017825A (en) | 1996-03-29 | 2000-01-25 | Lam Research Corporation | Etch rate loading improvement |
US6068817A (en) | 1996-04-04 | 2000-05-30 | Ethicon, Inc. | Method for sterilizing an interior of an article |
US5961921A (en) | 1996-04-04 | 1999-10-05 | Johnson & Johnson Medical, Inc. | Method of sterilization in diffusion restricted environments |
US6030579A (en) | 1996-04-04 | 2000-02-29 | Johnson & Johnson Medical, Inc. | Method of sterilization using pretreatment with hydrogen peroxide |
US5928527A (en) | 1996-04-15 | 1999-07-27 | The Boeing Company | Surface modification using an atmospheric pressure glow discharge plasma source |
US6221268B1 (en) | 1996-04-15 | 2001-04-24 | The Boeing Company | Surface modification using an atmospheric pressure glow discharge plasma source |
US6309979B1 (en) | 1996-12-18 | 2001-10-30 | Lam Research Corporation | Methods for reducing plasma-induced charging damage |
US5869401A (en) | 1996-12-20 | 1999-02-09 | Lam Research Corporation | Plasma-enhanced flash process |
US6225593B1 (en) | 1997-02-15 | 2001-05-01 | Helica Instruments Limited | Medical apparatus for generating an ionised gas plasma flame |
WO1998035618A1 (en) | 1997-02-15 | 1998-08-20 | Helica Instruments Limited | Medical apparatus for generating an ionised gas plasma flame |
US5980768A (en) | 1997-03-07 | 1999-11-09 | Lam Research Corp. | Methods and apparatus for removing photoresist mask defects in a plasma reactor |
US6209551B1 (en) | 1997-06-11 | 2001-04-03 | Lam Research Corporation | Methods and compositions for post-etch layer stack treatment in semiconductor fabrication |
JPH118093A (en) | 1997-06-17 | 1999-01-12 | Yokogawa Electric Corp | Microwave induction plasma ignition device |
US6221792B1 (en) | 1997-06-24 | 2001-04-24 | Lam Research Corporation | Metal and metal silicide nitridization in a high density, low pressure plasma reactor |
US6200651B1 (en) | 1997-06-30 | 2001-03-13 | Lam Research Corporation | Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source |
JPH1121496A (en) | 1997-06-30 | 1999-01-26 | Nippon Shokubai Co Ltd | Material for forming protective membrane and temporarily protecting treatment of base material |
WO1999004606A2 (en) | 1997-07-14 | 1999-01-28 | Lam Research Corporation | Compact microwave downstream plasma system |
US6080270A (en) | 1997-07-14 | 2000-06-27 | Lam Research Corporation | Compact microwave downstream plasma system |
US6165910A (en) | 1997-12-29 | 2000-12-26 | Lam Research Corporation | Self-aligned contacts for semiconductor device |
US6016766A (en) | 1997-12-29 | 2000-01-25 | Lam Research Corporation | Microwave plasma processor |
JPH11224795A (en) | 1998-02-10 | 1999-08-17 | Shin Seiki:Kk | Method and apparatus for generating plasma, plasma-applied surface treatment method and gas treatment method |
US6170668B1 (en) | 1998-05-01 | 2001-01-09 | Mse Technology Applications, Inc. | Apparatus for extraction of contaminants from a gas |
US6727148B1 (en) | 1998-06-30 | 2004-04-27 | Lam Research Corporation | ULSI MOS with high dielectric constant gate insulator |
US6235640B1 (en) | 1998-09-01 | 2001-05-22 | Lam Research Corporation | Techniques for forming contact holes through to a silicon layer of a substrate |
US6635997B2 (en) * | 1998-10-23 | 2003-10-21 | Mitsubishi Heavy Industries, Ltd. | Microwave plasma generator, method of decomposing organic halide, and system for decomposing organic halide |
JP2000150484A (en) | 1998-11-11 | 2000-05-30 | Chemitoronics Co Ltd | Plasma etching device and etching method |
US6228330B1 (en) | 1999-06-08 | 2001-05-08 | The Regents Of The University Of California | Atmospheric-pressure plasma decontamination/sterilization chamber |
JP2000353689A (en) | 1999-06-10 | 2000-12-19 | Nec Yamagata Ltd | Dry etching system and dry etching method |
US6573731B1 (en) | 1999-07-20 | 2003-06-03 | Tokyo Electron Limited | Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator |
WO2001006402A1 (en) | 1999-07-20 | 2001-01-25 | Tokyo Electron Limited | Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma |
WO2001006268A1 (en) | 1999-07-20 | 2001-01-25 | Tokyo Electron Limited | Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator |
JP2001054556A (en) | 1999-08-18 | 2001-02-27 | Shikoku Kakoki Co Ltd | Atmospheric pressure low-temperature plasma sterilization method |
US6410451B2 (en) | 1999-09-27 | 2002-06-25 | Lam Research Corporation | Techniques for improving etching in a plasma processing chamber |
US6652709B1 (en) * | 1999-11-02 | 2003-11-25 | Canon Kabushiki Kaisha | Plasma processing apparatus having circular waveguide, and plasma processing method |
WO2001043512A1 (en) | 1999-12-09 | 2001-06-14 | Agrodyn Hochspannungstechnik Gmbh | Plasma nozzle |
US6677550B2 (en) | 1999-12-09 | 2004-01-13 | Plasmatreat Gmbh | Plasma nozzle |
US6363882B1 (en) | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
JP2001281284A (en) | 2000-03-30 | 2001-10-10 | Makoto Hirano | Nondestructive measuring instrument for complex dielectric constant |
US6696662B2 (en) * | 2000-05-25 | 2004-02-24 | Advanced Energy Industries, Inc. | Methods and apparatus for plasma processing |
US6337277B1 (en) | 2000-06-28 | 2002-01-08 | Lam Research Corporation | Clean chemistry low-k organic polymer etch |
US6441554B1 (en) | 2000-11-28 | 2002-08-27 | Se Plasma Inc. | Apparatus for generating low temperature plasma at atmospheric pressure |
US20030000823A1 (en) * | 2001-06-15 | 2003-01-02 | Uhm Han Sup | Emission control for perfluorocompound gases by microwave plasma torch |
JP2003135571A (en) | 2001-11-07 | 2003-05-13 | Toshiba Corp | Plasma sterilization apparatus |
DE10164120A1 (en) | 2001-12-24 | 2003-07-03 | Pierre Flecher | Method for sterilization plastic bottles using microwave plasma comprises introduction of the bottles into a vacuum container made of metal and production of plasma by means of a plasma head |
JP2003210556A (en) | 2002-01-18 | 2003-07-29 | Toshiba Corp | Pipe sterilizer with plasma |
JP2004045262A (en) | 2002-07-12 | 2004-02-12 | Aet Japan:Kk | Method for measuring complex dielectric constant using resonator, and instrument for executing the method |
US6792742B2 (en) | 2002-09-09 | 2004-09-21 | Phoenix Closures, Inc. | Method for storing and/or transporting items |
US20050127068A1 (en) * | 2003-09-08 | 2005-06-16 | Washington State University Research Foundation | Apparatus and method for heating objects with microwaves |
US7164095B2 (en) * | 2004-07-07 | 2007-01-16 | Noritsu Koki Co., Ltd. | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
Non-Patent Citations (12)
Title |
---|
B. Park et al., "Sterilization Using a Microwave-Induced Argon Plasma System at Atmospheric Pressure", Physics of Plasmas, Nov. 2003, pp. 4539-4544, vol. 10, No. 11, American Institute of Physics. |
C. Kuruger et al., "Nonequilibrium Discharges in Air and Nitrogen Plasmas at Atmospheric Pressure", Pure Applied Chemistry, 2002, pp. 337-347, vol. 74, No. 3, IUPAC. |
D. Korzec et al., "Free-Standing Microwave Excited Plasma Beam", Plasma Sources Science and Technology, Aug. 2003, pp. 523-532, vol. 12, Institute of Physics Publishing. |
I. Sorosnenko et al., "Sterilization of Medical Products in Low-Pressure Glow Discharges", Plasma Physics Reports, 2000, pp. 792-800, vol. 26, No. 9, MAIK "Nauka/Interperiodica". |
J. Gerling, "Equipment and Methods for Waveguide Power Measurements in Microwave Heating Applications", 2002, pp. 1-8, Gerling Applied Engineering, Inc. |
J. Gerling, "Waveguide Components and Configurations for Optimal Performance in Microwave Hearing Systems", 2000, pp. 1-8, Gerling Applied Engineering, Inc. |
K. Kelly-W et al., "Room Temperature Sterilization of Surfaces and Fabrics With a One Atmosphere Uniform Glow Discharge Plasma", Journal of Industrial Microbiology & Biotechnology, 1998, pp. 69-74, vol. 20, Society for Industrial & Microbiology. |
K. Kelly-W et al., "Use of a One Atmosphere Uniform Glow Discharge Plasma to Kill a Broad Spectrum of Microorganisms", Journal of Vacuum Science Technology, Jul./Aug. 1999, pp. 1539-1544, vol. 17 No. 4, American Vacuum Society. |
P. Woskov et al., "Large Electrodless Plasmas at Atmospheric Pressure Sustained by a Microwave Waveguide", Plasma Science and Fusion Center, Massachusetts Institute of Technology, Jan. 2002, pp. 1-8, to be published in IEEE Transactions on Plasma Science. |
S. Moon et al., "Characteristics of an Atmospheric Microwave-Induced Plasma Generated in Ambient Air by an Argon Discharge Excited in an Open-Ended Dielectric Discharge Tube", Physics of Plasmas, Sep. 2002, pp. 4045-4051, vol. 9, No. 9, American Institute of Physics. |
T. Wu et al., "A Large-Area Plasma Source Excited by a Tunable Surface Wave Cavity", Review of Scientific Instruments, May 1999, pp. 2331-2337, vol. 70, No. 5, American Institute of Physics. |
V. Khomich et al., "Investigation of Principal Factors of the Sterilization by Plasma DC Glow Discharge", Institute of Physics NAS Ukraine, Ukraine. |
Cited By (158)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100330300A1 (en) * | 2008-01-30 | 2010-12-30 | Stowell Michael W | System and method for pre-ionization of surface wave launched plasma discharge sources |
US20100074810A1 (en) * | 2008-09-23 | 2010-03-25 | Sang Hun Lee | Plasma generating system having tunable plasma nozzle |
US9754800B2 (en) | 2010-05-27 | 2017-09-05 | Applied Materials, Inc. | Selective etch for silicon films |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US10062578B2 (en) | 2011-03-14 | 2018-08-28 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US9842744B2 (en) | 2011-03-14 | 2017-12-12 | Applied Materials, Inc. | Methods for etch of SiN films |
US9067273B1 (en) * | 2012-05-17 | 2015-06-30 | Clemson University | High density atmospheric plasma jet devices by jet-to-jet interaction |
US10062587B2 (en) | 2012-07-18 | 2018-08-28 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US10032606B2 (en) | 2012-08-02 | 2018-07-24 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US10354843B2 (en) | 2012-09-21 | 2019-07-16 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9978564B2 (en) | 2012-09-21 | 2018-05-22 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US11264213B2 (en) | 2012-09-21 | 2022-03-01 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US11024486B2 (en) | 2013-02-08 | 2021-06-01 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9607856B2 (en) | 2013-03-05 | 2017-03-28 | Applied Materials, Inc. | Selective titanium nitride removal |
US9659792B2 (en) | 2013-03-15 | 2017-05-23 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9704723B2 (en) | 2013-03-15 | 2017-07-11 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9711366B2 (en) | 2013-11-12 | 2017-07-18 | Applied Materials, Inc. | Selective etch for metal-containing materials |
US9472417B2 (en) | 2013-11-12 | 2016-10-18 | Applied Materials, Inc. | Plasma-free metal etch |
US9472412B2 (en) | 2013-12-02 | 2016-10-18 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9837249B2 (en) | 2014-03-20 | 2017-12-05 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9564296B2 (en) * | 2014-03-20 | 2017-02-07 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9885117B2 (en) | 2014-03-31 | 2018-02-06 | Applied Materials, Inc. | Conditioned semiconductor system parts |
US10465294B2 (en) | 2014-05-28 | 2019-11-05 | Applied Materials, Inc. | Oxide and metal removal |
US9773695B2 (en) | 2014-07-31 | 2017-09-26 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9837284B2 (en) | 2014-09-25 | 2017-12-05 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9478432B2 (en) | 2014-09-25 | 2016-10-25 | Applied Materials, Inc. | Silicon oxide selective removal |
US10490418B2 (en) | 2014-10-14 | 2019-11-26 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10707061B2 (en) | 2014-10-14 | 2020-07-07 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10796922B2 (en) | 2014-10-14 | 2020-10-06 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US11158527B2 (en) | 2015-08-06 | 2021-10-26 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10147620B2 (en) | 2015-08-06 | 2018-12-04 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10468276B2 (en) | 2015-08-06 | 2019-11-05 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US10607867B2 (en) | 2015-08-06 | 2020-03-31 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US10424464B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US11476093B2 (en) | 2015-08-27 | 2022-10-18 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US11577314B2 (en) | 2015-12-16 | 2023-02-14 | 6K Inc. | Spheroidal titanium metallic powders with custom microstructures |
US11839919B2 (en) | 2015-12-16 | 2023-12-12 | 6K Inc. | Spheroidal dehydrogenated metals and metal alloy particles |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US11735441B2 (en) | 2016-05-19 | 2023-08-22 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10224180B2 (en) | 2016-10-04 | 2019-03-05 | Applied Materials, Inc. | Chamber with flow-through source |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10541113B2 (en) | 2016-10-04 | 2020-01-21 | Applied Materials, Inc. | Chamber with flow-through source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US11049698B2 (en) | 2016-10-04 | 2021-06-29 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US10319603B2 (en) | 2016-10-07 | 2019-06-11 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10186428B2 (en) | 2016-11-11 | 2019-01-22 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10770346B2 (en) | 2016-11-11 | 2020-09-08 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10600639B2 (en) | 2016-11-14 | 2020-03-24 | Applied Materials, Inc. | SiN spacer profile patterning |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10903052B2 (en) | 2017-02-03 | 2021-01-26 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10529737B2 (en) | 2017-02-08 | 2020-01-07 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10325923B2 (en) | 2017-02-08 | 2019-06-18 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11361939B2 (en) | 2017-05-17 | 2022-06-14 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10593553B2 (en) | 2017-08-04 | 2020-03-17 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US11101136B2 (en) | 2017-08-07 | 2021-08-24 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10861676B2 (en) | 2018-01-08 | 2020-12-08 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10699921B2 (en) | 2018-02-15 | 2020-06-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US11004689B2 (en) | 2018-03-12 | 2021-05-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US11273491B2 (en) | 2018-06-19 | 2022-03-15 | 6K Inc. | Process for producing spheroidized powder from feedstock materials |
US11465201B2 (en) | 2018-06-19 | 2022-10-11 | 6K Inc. | Process for producing spheroidized powder from feedstock materials |
US11471941B2 (en) | 2018-06-19 | 2022-10-18 | 6K Inc. | Process for producing spheroidized powder from feedstock materials |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US11311938B2 (en) | 2019-04-30 | 2022-04-26 | 6K Inc. | Mechanically alloyed powder feedstock |
US11633785B2 (en) | 2019-04-30 | 2023-04-25 | 6K Inc. | Mechanically alloyed powder feedstock |
US11611130B2 (en) | 2019-04-30 | 2023-03-21 | 6K Inc. | Lithium lanthanum zirconium oxide (LLZO) powder |
US11717886B2 (en) | 2019-11-18 | 2023-08-08 | 6K Inc. | Unique feedstocks for spherical powders and methods of manufacturing |
US11590568B2 (en) | 2019-12-19 | 2023-02-28 | 6K Inc. | Process for producing spheroidized powder from feedstock materials |
US11855278B2 (en) | 2020-06-25 | 2023-12-26 | 6K, Inc. | Microcomposite alloy structure |
US11963287B2 (en) | 2020-09-24 | 2024-04-16 | 6K Inc. | Systems, devices, and methods for starting plasma |
US11919071B2 (en) | 2020-10-30 | 2024-03-05 | 6K Inc. | Systems and methods for synthesis of spheroidized metal powders |
Also Published As
Publication number | Publication date |
---|---|
CN101066000B (en) | 2010-12-08 |
DE602005026300D1 (en) | 2011-03-24 |
CN101066000A (en) | 2007-10-31 |
EP1790201A2 (en) | 2007-05-30 |
CA2574114A1 (en) | 2006-02-09 |
US20060021581A1 (en) | 2006-02-02 |
JP2008508683A (en) | 2008-03-21 |
EP1790201B1 (en) | 2011-02-09 |
AU2005269581B2 (en) | 2009-07-16 |
RU2342734C2 (en) | 2008-12-27 |
US20080073202A1 (en) | 2008-03-27 |
WO2006014862A2 (en) | 2006-02-09 |
KR20070027750A (en) | 2007-03-09 |
JP4896880B2 (en) | 2012-03-14 |
WO2006014862A3 (en) | 2007-01-18 |
RU2007107371A (en) | 2008-09-10 |
AU2005269581A1 (en) | 2006-02-09 |
KR100871475B1 (en) | 2008-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7806077B2 (en) | Plasma nozzle array for providing uniform scalable microwave plasma generation | |
WO2006014809A1 (en) | System and method for controllng a power distribution within a microwave cavity | |
US7164095B2 (en) | Microwave plasma nozzle with enhanced plume stability and heating efficiency | |
US7271363B2 (en) | Portable microwave plasma systems including a supply line for gas and microwaves | |
CA2235648A1 (en) | Device for exciting a gas by a surface wave plasma and gas treatment apparatus incorporating such a device | |
US20080093358A1 (en) | Portable Microwave Plasma Discharge Unit | |
US7189939B2 (en) | Portable microwave plasma discharge unit | |
US20070290620A1 (en) | Portable Microwave Plasma Systems Including A Supply Line For Gas And Microwave | |
US20070145020A1 (en) | Methods and arrangement for creating a highly efficient downstream microwave plasma system | |
Biewer et al. | Utilization of OXB mode conversion of 28 GHz microwaves to heat core electrons in the upgraded Proto-MPEX | |
US7562638B2 (en) | Methods and arrangement for implementing highly efficient plasma traps | |
KR960012182A (en) | Microwave Plasma Generator | |
US20220409758A1 (en) | Microwave-Plasma Disinfector (Origreen) | |
JP2007234298A (en) | Plasma generating device and workpiece processing device using it | |
KR101858867B1 (en) | Plasma processing apparatus for generating a plasma by emitting a microwave in a chamber | |
KR101690625B1 (en) | Large scale ecr plasma generating device | |
KR20230060100A (en) | Plasma accelerator using e×b force | |
Yugo et al. | Quasi-optical ECRH beam system for MFTF-B | |
Verhaeghe et al. | THE FEASIBILITY OF GENERATING A MICROWAVE POWERED PLASMA | |
JPS62290041A (en) | Gyrotron device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NORITSU KOKI CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LEE, SANG HUN;KIM, JAY JOONGSOO;REEL/FRAME:015907/0817 Effective date: 20040930 Owner name: IMAGINEERING, INC., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LEE, SANG HUN;KIM, JAY JOONGSOO;REEL/FRAME:015907/0817 Effective date: 20040930 Owner name: AMARANTE TECHNOLOGIES, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LEE, SANG HUN;KIM, JAY JOONGSOO;REEL/FRAME:015907/0817 Effective date: 20040930 |
|
AS | Assignment |
Owner name: NORITSU KOKI CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:IMAGINEERING, INC.;REEL/FRAME:016669/0985 Effective date: 20050524 Owner name: AMARANTE TECHNOLOGIES, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:IMAGINEERING, INC.;REEL/FRAME:016669/0985 Effective date: 20050524 |
|
AS | Assignment |
Owner name: AMARANTE TECHNOLOGIES, INC., CALIFORNIA Free format text: CHANGE OF ASSIGNEE'S ADDRESS;ASSIGNOR:AMARANTE TECHNOLOGIES, INC.;REEL/FRAME:018756/0793 Effective date: 20070108 |
|
AS | Assignment |
Owner name: SAIAN CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NORITSU KOKI CO., LTD.;REEL/FRAME:024812/0226 Effective date: 20100713 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: NOXILIXER, INC., MARYLAND Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SAIAN CORPORATION;REEL/FRAME:030902/0276 Effective date: 20130621 Owner name: RECARBON, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AMARANTE TECHNOLOGIES, INC.;REEL/FRAME:030902/0216 Effective date: 20130701 |
|
AS | Assignment |
Owner name: NOXILIZER, INC., MARYLAND Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE NAME OF THE ASSIGNEE WHICH WAS MISPELLED PREVIOUSLY RECORDED ON REEL 030902 FRAME 0276. ASSIGNOR(S) HEREBY CONFIRMS THE NAME OF THE ASSIGNEE TO BE CORRECTED;ASSIGNOR:SAIAN CORPORATION;REEL/FRAME:031188/0797 Effective date: 20130621 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY Free format text: PAT HOLDER CLAIMS SMALL ENTITY STATUS, ENTITY STATUS SET TO SMALL (ORIGINAL EVENT CODE: LTOS); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: ALJ INVESTMENTS LLC, MARYLAND Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:041803/0157 Effective date: 20170329 |
|
AS | Assignment |
Owner name: MCDONALD, CAPERS W., MARYLAND Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042477/0699 Effective date: 20170427 Owner name: PENSCO TRUST COMPANY, CUSTODIAN FBO CHARLES T. HAL Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042478/0130 Effective date: 20170427 Owner name: GRAY, C. BOYDEN, NORTH CAROLINA Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042478/0306 Effective date: 20170427 Owner name: LASCELLE, WILLIAM A., MARYLAND Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042479/0084 Effective date: 20170427 Owner name: GORDON GRAY TRUST FBO C. BOYDEN GRAY, NORTH CAROLI Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042478/0598 Effective date: 20170427 Owner name: JOHNSON, BLANCHE M., MARYLAND Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042479/0084 Effective date: 20170427 Owner name: CLAPP, DAVID, MARYLAND Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042479/0255 Effective date: 20170427 Owner name: ANDERSON, M. JEAN, WYOMING Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042478/0841 Effective date: 20170427 Owner name: SAMUEL, MATHIAS, MINNESOTA Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042479/0490 Effective date: 20170427 |
|
AS | Assignment |
Owner name: SUZANNE P. MURPHY TRUST, NORTH CAROLINA Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042488/0307 Effective date: 20170427 |
|
AS | Assignment |
Owner name: EUGENE C. PULLIAM TRUST FBO SUZANNE P. MURPHY, OHI Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042508/0093 Effective date: 20170427 |
|
AS | Assignment |
Owner name: PENSCO TRUST COMPANY, CUSTODIAN, FBO JERRY L. PARR Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042517/0273 Effective date: 20170516 Owner name: PENSCO TRUST COMPANY, CUSTODIAN, FBO JERRY L. PARR Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042517/0141 Effective date: 20170410 |
|
AS | Assignment |
Owner name: THE ABELL FOUNDATION, INC., MARYLAND Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042877/0611 Effective date: 20170629 Owner name: SHEETS, JOHN RICHARD, NORTH CAROLINA Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042877/0459 Effective date: 20170626 |
|
AS | Assignment |
Owner name: GORDON GRAY TRUST FBO C. BOYDEN GRAY, NORTH CAROLI Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042915/0581 Effective date: 20170626 Owner name: EUGENE C. PULLIAM TRUST FBO SUZANNE P. MURPHY, OHI Free format text: SECURITY INTEREST;ASSIGNOR:NOXILIZER, INC.;REEL/FRAME:042915/0613 Effective date: 20170626 |
|
FEPP | Fee payment procedure |
Free format text: 7.5 YR SURCHARGE - LATE PMT W/IN 6 MO, SMALL ENTITY (ORIGINAL EVENT CODE: M2555) |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2552) Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
FEPP | Fee payment procedure |
Free format text: 11.5 YR SURCHARGE- LATE PMT W/IN 6 MO, SMALL ENTITY (ORIGINAL EVENT CODE: M2556); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2553); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY Year of fee payment: 12 |