US6815358B2 - Electron beam lithography method for plating sub-100 nm trenches - Google Patents
Electron beam lithography method for plating sub-100 nm trenches Download PDFInfo
- Publication number
- US6815358B2 US6815358B2 US10/108,309 US10830902A US6815358B2 US 6815358 B2 US6815358 B2 US 6815358B2 US 10830902 A US10830902 A US 10830902A US 6815358 B2 US6815358 B2 US 6815358B2
- Authority
- US
- United States
- Prior art keywords
- layer
- dissolution
- undercoat
- resist layer
- narrow trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
- G11B5/1871—Shaping or contouring of the transducing or guiding surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/108,309 US6815358B2 (en) | 2001-09-06 | 2002-03-28 | Electron beam lithography method for plating sub-100 nm trenches |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US31769901P | 2001-09-06 | 2001-09-06 | |
US10/108,309 US6815358B2 (en) | 2001-09-06 | 2002-03-28 | Electron beam lithography method for plating sub-100 nm trenches |
Publications (2)
Publication Number | Publication Date |
---|---|
US20030045110A1 US20030045110A1 (en) | 2003-03-06 |
US6815358B2 true US6815358B2 (en) | 2004-11-09 |
Family
ID=26805765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/108,309 Expired - Fee Related US6815358B2 (en) | 2001-09-06 | 2002-03-28 | Electron beam lithography method for plating sub-100 nm trenches |
Country Status (1)
Country | Link |
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US (1) | US6815358B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050252780A1 (en) * | 2004-05-14 | 2005-11-17 | Driskill-Smith Alexander A G | Methods for improving positioning performance of electron beam lithography on magnetic wafers |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3710795B2 (en) * | 2003-05-16 | 2005-10-26 | 東京応化工業株式会社 | Negative photoresist composition |
US8278220B2 (en) * | 2008-08-08 | 2012-10-02 | Fei Company | Method to direct pattern metals on a substrate |
US8532931B2 (en) * | 2008-09-07 | 2013-09-10 | Edward Lakatos | Calculating sample size for clinical trial |
Citations (15)
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---|---|---|---|---|
DE3635462A1 (en) | 1985-10-21 | 1987-04-23 | Sharp Kk | FIELD EFFECT PRESSURE SENSOR |
US4933743A (en) | 1989-03-11 | 1990-06-12 | Fairchild Semiconductor Corporation | High performance interconnect system for an integrated circuit |
US5185294A (en) | 1991-11-22 | 1993-02-09 | International Business Machines Corporation | Boron out-diffused surface strap process |
US5360698A (en) | 1992-09-21 | 1994-11-01 | Eastman Kodak Company | Deep UV lift-off resist process |
US5604073A (en) | 1994-01-12 | 1997-02-18 | International Business Machines Corporation | Azo dyes as adhesion promotion additive in polydimethylglutarimide |
US5670404A (en) | 1996-06-21 | 1997-09-23 | Industrial Technology Research Institute | Method for making self-aligned bit line contacts on a DRAM circuit having a planarized insulating layer |
US5786253A (en) | 1997-04-18 | 1998-07-28 | United Microelectronics Corporation | Method of making a multi-level ROM device |
US5798559A (en) | 1996-03-29 | 1998-08-25 | Vlsi Technology, Inc. | Integrated circuit structure having an air dielectric and dielectric support pillars |
US5802700A (en) | 1994-04-19 | 1998-09-08 | International Business Machines Corporation | Method of making a planarized thin film magnetic write head with submicron trackwidth |
US5828121A (en) | 1994-07-15 | 1998-10-27 | United Microelectronics Corporation | Multi-level conduction structure for VLSI circuits |
US5972570A (en) * | 1997-07-17 | 1999-10-26 | International Business Machines Corporation | Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby |
EP0651433B1 (en) | 1993-11-02 | 2000-07-12 | Siemens Aktiengesellschaft | Method of making a contact hole to a doped region |
US6218056B1 (en) | 1999-03-30 | 2001-04-17 | International Business Machines Corporation | Method of making highly defined bilayer lift-off mask |
US6303260B1 (en) * | 2000-03-31 | 2001-10-16 | Microchem Corp. | Dissolution rate modifiers for lift-off resists |
US6316360B1 (en) | 1998-04-21 | 2001-11-13 | Micron Technology, Inc. | High aspect ratio metallization structures for shallow junction devices, and methods of forming the same |
-
2002
- 2002-03-28 US US10/108,309 patent/US6815358B2/en not_active Expired - Fee Related
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3635462A1 (en) | 1985-10-21 | 1987-04-23 | Sharp Kk | FIELD EFFECT PRESSURE SENSOR |
US4933743A (en) | 1989-03-11 | 1990-06-12 | Fairchild Semiconductor Corporation | High performance interconnect system for an integrated circuit |
US5185294A (en) | 1991-11-22 | 1993-02-09 | International Business Machines Corporation | Boron out-diffused surface strap process |
EP0543158A2 (en) | 1991-11-22 | 1993-05-26 | International Business Machines Corporation | Method of conducting strap formation in a semiconductor device |
US5360698A (en) | 1992-09-21 | 1994-11-01 | Eastman Kodak Company | Deep UV lift-off resist process |
EP0651433B1 (en) | 1993-11-02 | 2000-07-12 | Siemens Aktiengesellschaft | Method of making a contact hole to a doped region |
US5604073A (en) | 1994-01-12 | 1997-02-18 | International Business Machines Corporation | Azo dyes as adhesion promotion additive in polydimethylglutarimide |
US5802700A (en) | 1994-04-19 | 1998-09-08 | International Business Machines Corporation | Method of making a planarized thin film magnetic write head with submicron trackwidth |
US5828121A (en) | 1994-07-15 | 1998-10-27 | United Microelectronics Corporation | Multi-level conduction structure for VLSI circuits |
US5798559A (en) | 1996-03-29 | 1998-08-25 | Vlsi Technology, Inc. | Integrated circuit structure having an air dielectric and dielectric support pillars |
US5670404A (en) | 1996-06-21 | 1997-09-23 | Industrial Technology Research Institute | Method for making self-aligned bit line contacts on a DRAM circuit having a planarized insulating layer |
US5786253A (en) | 1997-04-18 | 1998-07-28 | United Microelectronics Corporation | Method of making a multi-level ROM device |
US5972570A (en) * | 1997-07-17 | 1999-10-26 | International Business Machines Corporation | Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby |
US6316360B1 (en) | 1998-04-21 | 2001-11-13 | Micron Technology, Inc. | High aspect ratio metallization structures for shallow junction devices, and methods of forming the same |
US6218056B1 (en) | 1999-03-30 | 2001-04-17 | International Business Machines Corporation | Method of making highly defined bilayer lift-off mask |
US6303260B1 (en) * | 2000-03-31 | 2001-10-16 | Microchem Corp. | Dissolution rate modifiers for lift-off resists |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050252780A1 (en) * | 2004-05-14 | 2005-11-17 | Driskill-Smith Alexander A G | Methods for improving positioning performance of electron beam lithography on magnetic wafers |
US7172786B2 (en) * | 2004-05-14 | 2007-02-06 | Hitachi Global Storage Technologies Netherlands B.V. | Methods for improving positioning performance of electron beam lithography on magnetic wafers |
Also Published As
Publication number | Publication date |
---|---|
US20030045110A1 (en) | 2003-03-06 |
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