US6635839B1 - Semiconductor analysis arrangement and method therefor - Google Patents
Semiconductor analysis arrangement and method therefor Download PDFInfo
- Publication number
- US6635839B1 US6635839B1 US09/838,672 US83867201A US6635839B1 US 6635839 B1 US6635839 B1 US 6635839B1 US 83867201 A US83867201 A US 83867201A US 6635839 B1 US6635839 B1 US 6635839B1
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- Prior art keywords
- die
- perturbation
- test chamber
- control
- analysis system
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
Definitions
- the present invention relates generally to semiconductor device analysis and, more particularly, to devices and arrangements for enhancing the operability of semiconductor analysis.
- One type of semiconductor analysis involves conveniently directing perturbation signals, such as laser light, to a semiconductor device under test (DUT).
- DUT semiconductor device under test
- issues include concerns such as laser leakage, calibration problems, and functional deficiencies.
- the present invention is directed to an approach for improving semiconductor analysis.
- the present invention is exemplified in a number of implementations and applications, some of which are summarized below.
- a system is adapted for analyzing a semiconductor die using two or more perturbation devices adapted to perturb the die.
- the system includes a test chamber and a docking arrangement adapted to dock with the test chamber and to hold the semiconductor die for analysis in the test chamber.
- a controller is adapted to control the perturbation, and a response from the die to the perturbation is acquired using a data acquisition arrangement.
- the data is used, for example, to analyze the die and/or to control the analysis system, and can be accomplished in a test chamber using a variety of perturbation devices.
- FIG. 1 is semiconductor analysis system, according to an example embodiment of the present invention.
- FIG. 2 is a system for analyzing a semiconductor die, according to another example embodiment of the present invention.
- FIG. 3 is a system for controlling a semiconductor analysis arrangement, according to another example embodiment of the present invention.
- the present invention is believed to be applicable for a variety of different types of analysis, and the invention has been found particularly suited for semiconductor die analysis involving multiple tools and detectors. While the present invention is not necessarily limited to such devices, various aspects of the invention may be appreciated through a discussion of various examples using this context.
- a semiconductor die analysis system is adapted to analyze a semiconductor die using two or more perturbation devices.
- the system includes a docking arrangement adapted to hold the die and to dock with a test chamber in a manner that presents the die inside of the test chamber.
- a controller is adapted to control the analysis system, such as for activating the perturbation devices and the docking arrangement.
- the perturbation devices are used to perturb the die, and a response of the die to the perturbation is detected using a data acquisition circuit adapted to receive the response. In this manner, the die can be tested using a variety of perturbation types, and a response from the die can be used for analysis.
- FIG. 1 shows a system 100 for analyzing a semiconductor die 102 , according to a more particular example embodiment of the present invention.
- the system includes a docking arrangement 105 adapted to hold the die 102 and to dock with a chamber 110 via a coupling arrangement 140 .
- Various seals, gaskets, locking devices and other implements are adaptable for use in connection with the docking arrangement to dock with and seal the chamber to the docking arrangement.
- a plurality of perturbation devices 101 , 103 and 104 are used to analyze the die.
- the perturbation devices may include, for example, an FIB device, a signal generator, a laser, an electron beam and/or an ion beam device.
- Operation data such as chamber condition, die response, and other data, is provided to a central processing unit (CPU) 115 .
- the CPU is coupled to the docking arrangement and adapted to receive response data from the die, such as electrical data obtained from die outputs, light reflections and emissions from the die.
- the perturbation devices 101 , 103 and 104 are coupled to the CPU 115 , and the CPU is adapted to control and receive feedback from the devices 101 .
- a monitor 120 is coupled to the CPU 115 and adapted to display information such as response data and control data. In one particular implementation, the monitor is used as part of a graphical user interface (GUI) for controlling the system 100 .
- GUI graphical user interface
- the perturbation devices can be used individually or in conjunction with each other for die analysis.
- each device is used to stimulate the die under a selected operating condition, and the response thereto is detected and noted for comparison to a response from a reference die.
- combinations of stimulation can be used to detect a response to the combination and similarly compared to a response from a reference die.
- a signal generator and voltage supply are used to operate the die, one or more of the other perturbation devices is used to perturb the die, and a response from the die is detected.
- various types of analysis such as those employing light induced voltage alteration (LIVA), thermal induced voltage alteration (TIVA), optical beam induced current (OBIC) and critical timing path (CTP) methods can be performed in a single test arrangement.
- LIVA light induced voltage alteration
- TIVA thermal induced voltage alteration
- OBIC optical beam induced current
- CTP critical timing path
- FIG. 2 is a schematic representation of a system 200 adapted to control and effect analysis of a semiconductor die, according to another example embodiment of the present invention.
- the system 200 may, for example, be used in connection with the controller discussed hereinabove.
- Various types of analysis methods such as those employing optical beam, ion beam and electron beam analyses, are controllable using this system.
- the system includes a host controller board 210 coupled to a plurality of individual circuits, modules, control boards, perturbation devices, detection devices and other system control devices.
- the host controller board is coupled to a user interface, such as a computer or a display, and adapted to provide an indication of the response of the die to a user via the interface.
- the response may be displayed at the user interface as a graph showing a relative response of the die to a selected perturbation.
- the perturbation device controllers include a laser control board 220 adapted to provide control signals to a laser perturbation device; an electron and/or ion beam control board 221 adapted to control one or both of an electron and ion beam perturbation device; and a perturbation beam controller 225 coupled to the host controller board 210 and adapted for one or more of acoustic, sonic, microwave and/or radiation perturbation sources.
- the system 200 is adaptable to couple to additional perturbation devices, such as an ion beam, electron beam, light and heat devices.
- the system 200 includes a variety of detection devices and controllers, one or more of which may, for example, be used with the data acquisition circuit discussed above.
- the detection devices include an optical beam induced current (OBIC) interface board 222 adapted for interfacing with an arrangement that optically induces current in the die, and includes a binary pass/fail signal input 245 and an amplifier 240 adapted to amplify analog and flip/flop inputs 241 and 242 .
- the amplified input is provided to the OBIC interface board 222 and may, for example, include an analog response from the die synchronized with the scan of a laser used to stimulate the die via the flip/flop input.
- the binary pass/fail input 245 optionally includes a signal representing a pass or fail state of a die being tested.
- the detection devices also include an electron and/or ion beam acquisition board 226 coupled to an electron and/or ion detector 238 .
- the detector 238 detects electrons and/or ions used in the analysis of the die (e.g., from an electron or ion source and/or from the die).
- the acquisition board 226 uses an output from the detector 238 to acquire a response and supplies that response to the host controller board 210 .
- Another detection device includes a microscope servo controller 229 adapted to control the position of a microscope used to image the die via a servo motor.
- Laser scanning microscope (LSM) camera 232 , emission microscopy camera 231 and optical image camera 230 are adapted to image the die being analyzed.
- the cameras may include, for example, microscopes having servo position control via board 224 .
- Image acquisition board 227 is coupled to cameras 232 , 231 and 230 and acquires image data therefrom.
- the image data is provided to the host controller board 210 and used, for example, to position the die, position the analysis equipment, for detecting defects and other analysis applications.
- the system 200 also includes a variety of other system control devices, including a data storage control device 233 coupled to a hard disk 234 , an external disk 235 (e.g., a zip disk, a laser disk and/or a floppy disk), and a network device 236 .
- the data storage control device is adapted to store a variety of data, including response data from the die and preset data for selected perturbation schemes (e.g., operating the die under selected conditions while perturbing the die with a laser using selected power, frequency and other parameters).
- the data storage control device is used to store and retrieve reference data for perturbing a reference die in a selected manner. The reference data is then used to compare a response from a die being analyzed to the reference die, and a condition of the die being tested is detected therefrom.
- a tester control board 223 is also coupled to the host controller board and adapted to control a test chamber, such as chamber 110 in FIG. 1 .
- Control of the test chamber may include, for example, coupling the docking arrangement 105 with the chamber 110 and initiating a vacuum pump to draw a vacuum on the chamber, power supply to the chamber and other applications.
- a stage servo controller board 224 is adapted to control a servo motor coupled to a stage adapted to hold the die. The servo motor is adapted to move the stage to position the die.
- the stage servo controller board 224 is adapted to position the die in response to one or more of the perturbation devices, detection devices and system control devices.
- the stage servo controller board is adapted to provide position feedback to the host controller board for identifying a position movement or relative position of the die.
- a graphical user interface (GUI) and control board 237 are coupled to the host controller board and adapted to accept inputs from a user for controlling selected ones of the perturbation device controllers, detection device controllers and system controllers. Selections such as the type of analysis to be performed, analysis parameters and system control can be input via the GUI.
- the GUI is adapted to control the direction of a laser beam to a die using the laser control board 220 and the stage servo controller board 224 .
- FIG. 3 is a laser controller 300 , according to a more particular example embodiment of the present invention.
- the laser controller may be used, for example, in connection with the systems and methods described herein, such as in connection with control board 220 in FIG. 2 .
- the laser controller 300 includes a laser control board 302 having a plurality of input and output ports.
- the ports include laser energy control 310 , laser beam selection 312 , laser spot size control 314 , laser pulse duty cycle control 316 , mirror frequency and status input 318 , mirror speed control 320 , interlock 322 , host controller interface 324 , laser beam status 326 and filter position control 328 .
- Each port is used to communicate signals for effecting the control and/or function related to its identification, such as for positioning laser and related equipment, for controlling the power and configuration of the laser and for ensuring interlocks are in place, such as a chamber door being closed.
- the interlock 322 receives a signal that is indicative of an interlock failing (e.g., a detected light leak or an unsealed vacuum)
- the laser energy control port 310 is used to turn the laser off
- a laser beam status 326 is used to verify that the beam is indeed off.
- the laser controller 300 includes a graphical user interface (GUTI) 305 .
- GUI graphical user interface
- the GUI is adapted to make possible operator control of the laser controller 300 , and in one implementation, is included as a part of GUI 237 of FIG. 2 .
- the GUI 305 is adaptable for control of various analysis parameters, such as gas, temperature, cooling, beam focusing, signal latching, test configuration, monitor selections including contrast, brightness and color selection, scanning features, dwell time, scanning rate control, spot control, internal tool selection (e.g., with various analysis techniques, such as a dual-beam arrangement, photon beam analysis, TIVA, LIVA, OBIC, OBIRCH and CTP), and imaging controls such as overlays, labeling images and image processing.
- analysis parameters such as gas, temperature, cooling, beam focusing, signal latching, test configuration, monitor selections including contrast, brightness and color selection, scanning features, dwell time, scanning rate control, spot control, internal tool selection (e.g., with various analysis techniques, such as a dual
Abstract
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US09/838,672 US6635839B1 (en) | 2000-04-19 | 2001-04-19 | Semiconductor analysis arrangement and method therefor |
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US19836500P | 2000-04-19 | 2000-04-19 | |
US09/838,672 US6635839B1 (en) | 2000-04-19 | 2001-04-19 | Semiconductor analysis arrangement and method therefor |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060232284A1 (en) * | 2005-04-15 | 2006-10-19 | International Business Machines Corporation | Sensor differentiated fault isolation |
Citations (2)
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US5646870A (en) * | 1995-02-13 | 1997-07-08 | Advanced Micro Devices, Inc. | Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers |
US6066822A (en) * | 1995-07-28 | 2000-05-23 | Advantest Corporation | Semiconductor device testing apparatus and semiconductor device testing system having a plurality of semiconductor device testing apparatus |
-
2001
- 2001-04-19 US US09/838,672 patent/US6635839B1/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5646870A (en) * | 1995-02-13 | 1997-07-08 | Advanced Micro Devices, Inc. | Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers |
US6066822A (en) * | 1995-07-28 | 2000-05-23 | Advantest Corporation | Semiconductor device testing apparatus and semiconductor device testing system having a plurality of semiconductor device testing apparatus |
Non-Patent Citations (1)
Title |
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D Kahng, T.A. Shankoff, T.T. Sheng and S.E. Haszko; "A Method for Area Saving Palnar Isolation Oxides Using Oxidation Protected Sidewalls", Nov. 1980, J Electrochem. Soc.: Solid State Sceince and Technology; p. 2468-2471. * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060232284A1 (en) * | 2005-04-15 | 2006-10-19 | International Business Machines Corporation | Sensor differentiated fault isolation |
US7202689B2 (en) | 2005-04-15 | 2007-04-10 | International Business Machines Corporation | Sensor differentiated fault isolation |
US20070126450A1 (en) * | 2005-04-15 | 2007-06-07 | Condon Kevin L | Sensor differentiated fault isolation |
US7397263B2 (en) | 2005-04-15 | 2008-07-08 | International Business Machines Corporation | Sensor differentiated fault isolation |
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