US5977828A - Multiple-tail transconductance switchable gain amplifer - Google Patents
Multiple-tail transconductance switchable gain amplifer Download PDFInfo
- Publication number
- US5977828A US5977828A US08/989,653 US98965397A US5977828A US 5977828 A US5977828 A US 5977828A US 98965397 A US98965397 A US 98965397A US 5977828 A US5977828 A US 5977828A
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- gain
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45098—PI types
- H03F3/45103—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45371—Indexing scheme relating to differential amplifiers the AAC comprising parallel coupled multiple transistors at their source and gate and drain or at their base and emitter and collector, e.g. in a cascode dif amp, only those forming the composite common source transistor or the composite common emitter transistor respectively
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45466—Indexing scheme relating to differential amplifiers the CSC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors
Definitions
- the present invention relates to variable gain amplifiers.
- the system is particularly useful for communication systems where a wide range of signal levels needs to be handled.
- An object of this invention is to provide an improved variable gain amplifier.
- variable gain amplifier circuit comprising:
- control unit in operative relationship with said array of amplification gain elements to activate a selected one of said gain elements in dependence of a desired level of signal amplification
- a parasitic capacitance isolation element in said second electrical pathway between said array of amplification gain elements and said output node, said parasitic capacitance isolation element decreasing a capacitive feedback admittance of said output node.
- variable gain amplifier includes two or more amplifier stages, the number of stages being sufficient to provide an adequate range of signal amplification.
- Each amplifier stage includes two branches, each branch receiving one terminal (V in +, V in -) of the input signal pathway.
- Each branch includes a bipolar junction transistor, the two transistors forming a differential pair. The input signal is applied to the base terminals of the transistors to modulate the current flow in the branches.
- a transimpedance buffer is placed between the output node of the amplifier and the array of amplifier stages to form an isolation element reducing the capacitive feedback admittance as seen from the output node.
- the transimpedance buffer can comprise simple transistors that are in constant conduction (turned on) by an independent voltage source.
- variable gain amplifier circuit comprising:
- each gain element including a gain element input and a gain element output, an input signal impressed at said gain element input causing said gain element to impress at said gain element output an output signal related to said input signal by a certain gain value
- each gain element also including a solid state switch responsive to a signal to activate the gain element and permit the generation of said output signal upon application of said input signal at said gain element input.
- control input including:
- each actuation channel being connected to a solid state switch of a corresponding gain element
- each output channel being connected to the gain element output of a respective gain element
- control unit being responsive to a control signal indicative of a desired gain value to:
- FIG. 1 is a block diagram showing a dual-gain emitter-coupled differential pair amplifier
- FIG. 2 is a block diagram showing several stages of dual-gain amplifiers stacked in series;
- FIG. 3 is a block diagram of a multiple-tail transconductance switchable gain amplifier in accordance with the invention.
- FIG. 4 is a block diagram of a multiple-tail transconductance switchable gain amplifier with cascode stage
- FIG. 5 is a block diagram of a common-base switchable gain amplifier using a parallel connection of emitters.
- the present invention provides an improved switchable gain amplifier that is particularly well suited for use in communication networks where multiple levels of gain must be handled.
- FIG. 1 illustrates a dual-gain emitter-coupled differential pair amplifier, which is well known to those skilled in the art.
- the emitter-degenerated differential pair e.g. transistors 102 and 104 with R E1 108 or transistors 100 and 106 with R R2 110
- This current signal then goes into the collector resistors R c 112 and 114 to produce a differential output voltage signal.
- gain select circuitry 116 By switching the cell current I 1 or I 2 on, through the use of gain select circuitry 116, two different transconductance cells are switched in, and as a result, two different values of gain are realized. These values can be calculated according to: ##EQU1##
- FIG. 2 shows a block diagram illustrating this embodiment with three dual-gain amplifiers 200, 202 and 204 in series.
- This embodiment permits eight different gain values since each dual-gain amplifier permits two gain values.
- the gain select circuitry 210 receives the input digital control signal and determines, by digital decoding, the gain selection for each dual-gain amplifier in order to achieve the required overall gain value.
- DC level shifters 206 and 208 are required between each dual-gain amplifier in order that the DC voltage is kept in the functioning range of the dual-gain amplifiers. Another point to note concerning this circuit is that, when it is in operation, one differential pair in each dual-gain amplifier must be turned on for each gain setting.
- FIG. 3 a block diagram of a variable gain amplifier in accordance with the invention is shown.
- This embodiment is rendered possible through the use of multiple-tail transconductance elements.
- the basic idea is to use a parallel structure instead of the series structure shown in FIG. 2.
- the gain select circuitry 316 receives the digital control word and determines, by digital decoding, which differential pair (transistors 302 and 304 with resistor R E1 308 to transistors 300 and 306 with resistor R En 310) should be turned on in order to achieve the required overall gain value.
- a differential pair is turned on by switching its tail current on (I 1 to I n ).
- the gain for this amplifier can be calculated as: ##EQU2##
- the values of the resistors R E1 308 to R En 310 are chosen in order to achieve the required gain values.
- the number of gain settings may be increased by adding more transconductance elements to the circuit.
- this circuit is that, as the number of parallel transistors increases, the capacitance at the output nodes increase as well. As a result, the operating frequency bandwidth of the circuit decreases.
- a cascode stage is added to the multiple-tail transconductance switchable gain amplifier as shown in FIG. 4.
- the cascode stage is an isolation element that reduces the capacitive feedback admittance of the circuit, thus allowing the circuit to operate over an extended bandwidth.
- the feedback admittance would be a measure of the capacity of the circuit to let alternating current flow between its output and its input.
- the isolation element includes transimpedance buffers (solid state switches transferring the voltage signal into a current signal) in the form of transistors Q C1 400 and Q C2 402 that are connected to the collectors of the transistors 404 to 410, respectively.
- the function of transistors Q C1 and Q C2 is to separate the output nodes from the high capacitance nodes. As a result, the bandwidth of the circuit is much less affected by its parallel structure.
- the gain select circuitry 416 functions in the same manner as in the embodiment described at FIG. 2.
- the amplifiers described in the preceding figures are all variable-gain amplifiers with tail current switching. However, the general technique described of adding gain elements in parallel is equally applicable to other variants of variable gain circuits.
- the common-base differential amplifier shown in FIG. 5 is such an adaptation of the parallel structure.
- This circuit includes a series of collector resistors R C1 500 to R C2 506, a series of transistors 508 to 514, two emitter resistors R E 518 and 520, a multiplexer 522 and a gain control circuit 516, the multiplexer 522 and the gain select circuit 516 forming a control element.
- the gain select circuit includes a plurality of actuation channels S 1 to S n connected to the base terminals of the respective gain elements to enable selective actuation of the gain elements by current injection in the respective transistor base terminals.
- the multiplexer includes a plurality of input channels K 1 to K n , each input channel being connected to the output of a respective gain element.
- the multiplexer also includes an output node 524. The purpose of the multiplexer is to transfer the output voltage generated by the selected gain element to the output node.
- the gain select circuitry 516 receives the digital control signal and determines, by digital decoding, the multiplexer 522 control selection and the transistor control voltage (G 1 to G n ) in order to achieve the required overall gain value.
- the multiplexer is an analog switch device that can transfer to the output node V out + and V out - the voltage across the collectors of any one of the amplifier stages, in dependence upon the control signal.
- This control signal is preferably digital in nature, the bit combination defining the amplifier stage whose output is to be transferred.
- the gain select circuitry also injects a current in the base terminals of the selected amplifier stage through the actuation channels S 1 to S n .
- the input to the multiplexer 522 and the base terminals conductors S 1 to S n are therefore synchronized, the actuation of one particular base terminal conductor pair associated to a given amplifier stage, corresponding to the selection at the multiplexer 522 of the same amplifier stage output.
- the gain select circuit 516 may be constructed in a number of ways. Implementation by using only hardware is preferred for reasons of simplicity.
- the gain select circuit 516 can be constructed as a switch array, impressing a voltage at the actuation channel in response to the digital code impressed at the input of the gain select circuit 516.
- a suitable voltage or current source will be required (this source is not shown in the drawings).
- CMOS complementary metal oxide semiconductor
- R c collector loads
- R E emitter degeneration
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
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US08/989,653 US5977828A (en) | 1997-12-12 | 1997-12-12 | Multiple-tail transconductance switchable gain amplifer |
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US08/989,653 US5977828A (en) | 1997-12-12 | 1997-12-12 | Multiple-tail transconductance switchable gain amplifer |
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US5977828A true US5977828A (en) | 1999-11-02 |
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US08/989,653 Expired - Lifetime US5977828A (en) | 1997-12-12 | 1997-12-12 | Multiple-tail transconductance switchable gain amplifer |
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Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6181206B1 (en) * | 1998-06-23 | 2001-01-30 | Stmicroelectronics S.R.L. | Low noise RF amplifier with programmable gain |
US6445251B1 (en) * | 1998-09-30 | 2002-09-03 | Conexant Systems, Inc. | Variable gain amplifier with high linearity and low noise |
DE10132800C1 (en) * | 2001-07-06 | 2003-01-30 | Infineon Technologies Ag | Low noise amplifier circuit |
WO2003012975A1 (en) * | 2001-08-01 | 2003-02-13 | Sige Semiconductor Inc. | Automatic gain control for a voltage controlled oscillator |
US6577187B1 (en) * | 2000-06-15 | 2003-06-10 | Upstate Audio | Powered transducer preamplifier with DC level shifting circuit |
WO2002063761A3 (en) * | 2001-02-05 | 2003-11-27 | Em Microelectronic Marin Sa | Photodetector preamplifier circuit having a rotating input stage |
WO2004008630A2 (en) * | 2002-07-10 | 2004-01-22 | Infineon Technologies Ag | Amplifying circuit with adjustable amplification and transmitter system comprising such an amplifying circuit |
WO2004064250A1 (en) * | 2003-01-09 | 2004-07-29 | Thomson Licensing S.A. | Controllable rf broadband amplifier with a constant input impedance |
US20040198402A1 (en) * | 2002-08-29 | 2004-10-07 | Lutz Dathe | Electronic circuit with improved current stabilisation |
US6812771B1 (en) | 2003-09-16 | 2004-11-02 | Analog Devices, Inc. | Digitally-controlled, variable-gain mixer and amplifier structures |
US20060044064A1 (en) * | 2004-08-26 | 2006-03-02 | Stmicroelectronics S.R.I. | Low noise amplifier |
US20060049875A1 (en) * | 2004-08-17 | 2006-03-09 | Zdravko Boos | Controllable amplifier circuit with a variable discrete-value gain, use of the amplifier circuit and method for operation of an amplifier whose gain can be adjusted in discrete values |
US20070273438A1 (en) * | 2006-05-24 | 2007-11-29 | Hickman Barton T | Mode selection amplifier circuit usable in a signal acquisition probe |
WO2014018124A1 (en) * | 2012-07-27 | 2014-01-30 | Xilinx, Inc. | Receiver having a wide common mode input range |
US20140145790A1 (en) * | 2012-11-28 | 2014-05-29 | Motorola Solutions, Inc. | Method and apparatus for implementing a low noise amplifier with associated gain and input impedance |
US9899973B2 (en) * | 2016-03-18 | 2018-02-20 | Inphi Corporation | Split cascode circuits and related communication receiver architectures |
EP3672074A1 (en) * | 2018-12-18 | 2020-06-24 | NXP USA, Inc. | Configurable switched power amplifier for efficient high/low output power |
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US4460872A (en) * | 1981-12-03 | 1984-07-17 | Inventab Audio Kb | Low noise differential amplifier |
US5216384A (en) * | 1991-05-24 | 1993-06-01 | Alcatel Espace | Programmable amplifier device |
US5313172A (en) * | 1992-12-11 | 1994-05-17 | Rockwell International Corporation | Digitally switched gain amplifier for digitally controlled automatic gain control amplifier applications |
US5420538A (en) * | 1994-06-10 | 1995-05-30 | Northern Telecom Limited | Linear bipolar junction transistor amplifier |
US5461342A (en) * | 1994-07-13 | 1995-10-24 | Texas Instruments Incorporated | Wide bandwidth, phase-stable amplifier circuit and method |
US5619169A (en) * | 1994-09-30 | 1997-04-08 | Ando Electric Co., Ltd. | Variable gain differential amplifier |
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1997
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US4460872A (en) * | 1981-12-03 | 1984-07-17 | Inventab Audio Kb | Low noise differential amplifier |
US5216384A (en) * | 1991-05-24 | 1993-06-01 | Alcatel Espace | Programmable amplifier device |
US5313172A (en) * | 1992-12-11 | 1994-05-17 | Rockwell International Corporation | Digitally switched gain amplifier for digitally controlled automatic gain control amplifier applications |
US5420538A (en) * | 1994-06-10 | 1995-05-30 | Northern Telecom Limited | Linear bipolar junction transistor amplifier |
US5461342A (en) * | 1994-07-13 | 1995-10-24 | Texas Instruments Incorporated | Wide bandwidth, phase-stable amplifier circuit and method |
US5619169A (en) * | 1994-09-30 | 1997-04-08 | Ando Electric Co., Ltd. | Variable gain differential amplifier |
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RF-Heterodyne Receiver Design Technique for Digital Cellular Wireless Systems, Josef Fenk, Siemens, 1995, pp. 1-85. |
Cited By (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6181206B1 (en) * | 1998-06-23 | 2001-01-30 | Stmicroelectronics S.R.L. | Low noise RF amplifier with programmable gain |
US6445251B1 (en) * | 1998-09-30 | 2002-09-03 | Conexant Systems, Inc. | Variable gain amplifier with high linearity and low noise |
US6577187B1 (en) * | 2000-06-15 | 2003-06-10 | Upstate Audio | Powered transducer preamplifier with DC level shifting circuit |
WO2002063761A3 (en) * | 2001-02-05 | 2003-11-27 | Em Microelectronic Marin Sa | Photodetector preamplifier circuit having a rotating input stage |
US6657487B2 (en) | 2001-02-05 | 2003-12-02 | Em(Us) Design, Inc | Photodetector preamplifier circuit having a rotating input stage |
DE10132800C1 (en) * | 2001-07-06 | 2003-01-30 | Infineon Technologies Ag | Low noise amplifier circuit |
US7057457B2 (en) | 2001-07-06 | 2006-06-06 | Infineon Technologies Ag | Low-noise amplifying circuit |
US20050068106A1 (en) * | 2001-07-06 | 2005-03-31 | Robert-Grant Irvine | Low-noise amplifying circuit |
WO2003012975A1 (en) * | 2001-08-01 | 2003-02-13 | Sige Semiconductor Inc. | Automatic gain control for a voltage controlled oscillator |
US6680655B2 (en) | 2001-08-01 | 2004-01-20 | Sige Semiconductor Inc. | Automatic gain control for a voltage controlled oscillator |
WO2004008630A2 (en) * | 2002-07-10 | 2004-01-22 | Infineon Technologies Ag | Amplifying circuit with adjustable amplification and transmitter system comprising such an amplifying circuit |
WO2004008630A3 (en) * | 2002-07-10 | 2004-07-29 | Infineon Technologies Ag | Amplifying circuit with adjustable amplification and transmitter system comprising such an amplifying circuit |
US7109796B2 (en) * | 2002-07-10 | 2006-09-19 | Infineon Technologies Ag | Amplifying circuit with adjustable amplification and transmitter system comprising such an amplifying circuit |
DE10231181A1 (en) * | 2002-07-10 | 2004-01-29 | Infineon Technologies Ag | Amplifier circuit with adjustable gain and transmitter arrangement with the amplifier circuit |
US20050174175A1 (en) * | 2002-07-10 | 2005-08-11 | Bernhard Heigelmayer | Amplifying circuit with adjustable amplification and transmitter system comprising such an amplifying circuit |
US20040198402A1 (en) * | 2002-08-29 | 2004-10-07 | Lutz Dathe | Electronic circuit with improved current stabilisation |
DE10239813B4 (en) * | 2002-08-29 | 2005-09-29 | Advanced Micro Devices, Inc., Sunnyvale | Electronic circuit with improved current stabilization |
US7020485B2 (en) | 2002-08-29 | 2006-03-28 | Advanced Micro Devices, Inc. | Electronic circuit with improved current stabilization |
KR101007579B1 (en) * | 2003-01-09 | 2011-01-14 | 톰슨 라이센싱 | An amplifier arrangement, a broadcast radio receiver, and a receiver for data signals |
WO2004064250A1 (en) * | 2003-01-09 | 2004-07-29 | Thomson Licensing S.A. | Controllable rf broadband amplifier with a constant input impedance |
US20060125565A1 (en) * | 2003-01-09 | 2006-06-15 | Heinrich Schemmann | Controllable rf broadband and amplifier with a constant input impedance |
US6812771B1 (en) | 2003-09-16 | 2004-11-02 | Analog Devices, Inc. | Digitally-controlled, variable-gain mixer and amplifier structures |
US7242251B2 (en) * | 2004-08-17 | 2007-07-10 | Infineon Technologies Ag | Controllable amplifier circuit with a variable discrete-value gain, use of the amplifier circuit and method for operation of an amplifier whose gain can be adjusted in discrete values |
US20060049875A1 (en) * | 2004-08-17 | 2006-03-09 | Zdravko Boos | Controllable amplifier circuit with a variable discrete-value gain, use of the amplifier circuit and method for operation of an amplifier whose gain can be adjusted in discrete values |
US7332963B2 (en) * | 2004-08-26 | 2008-02-19 | Stmicroelectronics S.R.L. | Low noise amplifier |
US20060044064A1 (en) * | 2004-08-26 | 2006-03-02 | Stmicroelectronics S.R.I. | Low noise amplifier |
US20070273438A1 (en) * | 2006-05-24 | 2007-11-29 | Hickman Barton T | Mode selection amplifier circuit usable in a signal acquisition probe |
US7408406B2 (en) | 2006-05-24 | 2008-08-05 | Tektronix, Inc. | Mode selection amplifier circuit usable in a signal acquisition probe |
US9306509B2 (en) | 2012-07-27 | 2016-04-05 | Xilinx, Inc. | Receiver having a wide common mode input range |
CN104541450A (en) * | 2012-07-27 | 2015-04-22 | 吉林克斯公司 | Receiver having a wide common mode input range |
WO2014018124A1 (en) * | 2012-07-27 | 2014-01-30 | Xilinx, Inc. | Receiver having a wide common mode input range |
CN104541450B (en) * | 2012-07-27 | 2016-08-24 | 吉林克斯公司 | There is the receptor of wide common-mode input range |
US20140145790A1 (en) * | 2012-11-28 | 2014-05-29 | Motorola Solutions, Inc. | Method and apparatus for implementing a low noise amplifier with associated gain and input impedance |
US8810316B2 (en) * | 2012-11-28 | 2014-08-19 | Motorola Solutions, Inc. | Method and apparatus for implementing a low noise amplifier with associated gain and input impedance |
US9899973B2 (en) * | 2016-03-18 | 2018-02-20 | Inphi Corporation | Split cascode circuits and related communication receiver architectures |
EP3672074A1 (en) * | 2018-12-18 | 2020-06-24 | NXP USA, Inc. | Configurable switched power amplifier for efficient high/low output power |
US10951171B2 (en) | 2018-12-18 | 2021-03-16 | Nxp Usa, Inc. | Configurable switched power amplifier for efficient high/low output power |
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