US5577051A - Static memory long write test - Google Patents
Static memory long write test Download PDFInfo
- Publication number
- US5577051A US5577051A US08/173,197 US17319793A US5577051A US 5577051 A US5577051 A US 5577051A US 17319793 A US17319793 A US 17319793A US 5577051 A US5577051 A US 5577051A
- Authority
- US
- United States
- Prior art keywords
- bitline
- memory
- load
- complement
- true
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
Landscapes
- Static Random-Access Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (34)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/173,197 US5577051A (en) | 1993-12-22 | 1993-12-22 | Static memory long write test |
US08/251,565 US5629943A (en) | 1993-12-22 | 1994-05-31 | Integrated circuit memory with double bitline low special test mode control from output enable |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/173,197 US5577051A (en) | 1993-12-22 | 1993-12-22 | Static memory long write test |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/251,565 Continuation-In-Part US5629943A (en) | 1993-12-22 | 1994-05-31 | Integrated circuit memory with double bitline low special test mode control from output enable |
Publications (1)
Publication Number | Publication Date |
---|---|
US5577051A true US5577051A (en) | 1996-11-19 |
Family
ID=22630938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/173,197 Expired - Lifetime US5577051A (en) | 1993-12-22 | 1993-12-22 | Static memory long write test |
Country Status (1)
Country | Link |
---|---|
US (1) | US5577051A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5703816A (en) * | 1995-06-28 | 1997-12-30 | Samsung Electronics Co., Ltd. | Failed memory cell repair circuit of semiconductor memory |
US5745405A (en) * | 1996-08-26 | 1998-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd | Process leakage evaluation and measurement method |
US5745432A (en) * | 1996-01-19 | 1998-04-28 | Sgs-Thomson Microelectronics, Inc. | Write driver having a test function |
US5845059A (en) * | 1996-01-19 | 1998-12-01 | Stmicroelectronics, Inc. | Data-input device for generating test signals on bit and bit-complement lines |
US5848018A (en) * | 1996-01-19 | 1998-12-08 | Stmicroelectronics, Inc. | Memory-row selector having a test function |
EP0907185A2 (en) * | 1997-09-25 | 1999-04-07 | Siemens Aktiengesellschaft | Floating bitline test mode with digitally controllable bitline equalizers |
US5982687A (en) * | 1997-05-13 | 1999-11-09 | Micron Technology, Inc. | Method of detecting leakage within a memory cell capacitor |
US6122760A (en) * | 1998-08-25 | 2000-09-19 | International Business Machines Corporation | Burn in technique for chips containing different types of IC circuitry |
US6330697B1 (en) * | 1999-04-20 | 2001-12-11 | International Business Machines Corporation | Apparatus and method for performing a defect leakage screen test for memory devices |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4460978A (en) * | 1981-11-19 | 1984-07-17 | Mostek Corporation | Nonvolatile static random access memory cell |
US5051948A (en) * | 1988-02-23 | 1991-09-24 | Mitsubishi Denki Kabushiki Kaisha | Content addressable memory device |
US5255230A (en) * | 1991-12-31 | 1993-10-19 | Intel Corporation | Method and apparatus for testing the continuity of static random access memory cells |
US5289475A (en) * | 1990-11-29 | 1994-02-22 | Sgs-Thomson Microelectronics, Inc. | Semiconductor memory with inverted write-back capability and method of testing a memory using inverted write-back |
US5329175A (en) * | 1992-11-13 | 1994-07-12 | Advanced Micro Devices, Inc. | Reduced noise, low power, high speed output buffer |
US5347483A (en) * | 1992-03-06 | 1994-09-13 | Sharp Kabushiki Kaisha | Non-volatile associative memory with low transistor count |
-
1993
- 1993-12-22 US US08/173,197 patent/US5577051A/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4460978A (en) * | 1981-11-19 | 1984-07-17 | Mostek Corporation | Nonvolatile static random access memory cell |
US5051948A (en) * | 1988-02-23 | 1991-09-24 | Mitsubishi Denki Kabushiki Kaisha | Content addressable memory device |
US5289475A (en) * | 1990-11-29 | 1994-02-22 | Sgs-Thomson Microelectronics, Inc. | Semiconductor memory with inverted write-back capability and method of testing a memory using inverted write-back |
US5255230A (en) * | 1991-12-31 | 1993-10-19 | Intel Corporation | Method and apparatus for testing the continuity of static random access memory cells |
US5347483A (en) * | 1992-03-06 | 1994-09-13 | Sharp Kabushiki Kaisha | Non-volatile associative memory with low transistor count |
US5329175A (en) * | 1992-11-13 | 1994-07-12 | Advanced Micro Devices, Inc. | Reduced noise, low power, high speed output buffer |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5703816A (en) * | 1995-06-28 | 1997-12-30 | Samsung Electronics Co., Ltd. | Failed memory cell repair circuit of semiconductor memory |
US5745432A (en) * | 1996-01-19 | 1998-04-28 | Sgs-Thomson Microelectronics, Inc. | Write driver having a test function |
US5845059A (en) * | 1996-01-19 | 1998-12-01 | Stmicroelectronics, Inc. | Data-input device for generating test signals on bit and bit-complement lines |
US5848018A (en) * | 1996-01-19 | 1998-12-08 | Stmicroelectronics, Inc. | Memory-row selector having a test function |
US5745405A (en) * | 1996-08-26 | 1998-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd | Process leakage evaluation and measurement method |
US6188622B1 (en) | 1997-05-13 | 2001-02-13 | Micron Technology, Inc. | Method of identifying a defect within a memory circuit |
US6600687B2 (en) | 1997-05-13 | 2003-07-29 | Micron Technology, Inc. | Method of compensating for a defect within a semiconductor device |
US5982687A (en) * | 1997-05-13 | 1999-11-09 | Micron Technology, Inc. | Method of detecting leakage within a memory cell capacitor |
US5982686A (en) * | 1997-05-13 | 1999-11-09 | Micron Technology, Inc. | Memory circuit voltage regulator |
US6011736A (en) * | 1997-05-13 | 2000-01-04 | Micron Technology, Inc. | Device and method for testing a circuit |
US6011731A (en) * | 1997-05-13 | 2000-01-04 | Micron Technology, Inc. | Cell plate regulator |
US6026040A (en) * | 1997-05-13 | 2000-02-15 | Micron Technology, Inc. | Method of altering the margin affecting a memory cell |
US6028799A (en) * | 1997-05-13 | 2000-02-22 | Micron Technology, Inc. | Memory circuit voltage regulator |
US6052322A (en) * | 1997-05-13 | 2000-04-18 | Micron Technology, Inc. | Memory circuit voltage regulator |
US7054208B2 (en) | 1997-05-13 | 2006-05-30 | Micron Technology, Inc. | Method and device for testing a sense amp |
US6181617B1 (en) | 1997-05-13 | 2001-01-30 | Micron Technology, Inc. | Method and apparatus for testing a semiconductor device |
US20050152195A1 (en) * | 1997-05-13 | 2005-07-14 | Beigel Kurt D. | Method and device for testing a sense amp |
US6198676B1 (en) | 1997-05-13 | 2001-03-06 | Micron Technology, Inc. | Test device |
US6226210B1 (en) | 1997-05-13 | 2001-05-01 | Micron Technology, Inc. | Method of detecting a short from a digit line pair to ground |
US6262927B1 (en) | 1997-05-13 | 2001-07-17 | Micron Technology, Inc. | Current saturation test device |
US6882587B2 (en) | 1997-05-13 | 2005-04-19 | Micron Technology, Inc. | Method of preparing to test a capacitor |
US6335888B2 (en) | 1997-05-13 | 2002-01-01 | Micron Technology, Inc. | Margin-range apparatus for a sense amp's voltage-pulling transistor |
US6353564B1 (en) | 1997-05-13 | 2002-03-05 | Micron Technology, Inc. | Method of testing a memory array |
US6418071B2 (en) | 1997-05-13 | 2002-07-09 | Micron Technology, Inc. | Method of testing a memory cell |
US6445629B2 (en) | 1997-05-13 | 2002-09-03 | Micron Technology, Inc. | Method of stressing a memory device |
US6452846B1 (en) | 1997-05-13 | 2002-09-17 | Micron Technology, Inc. | Driver circuit for a voltage-pulling device |
US6469944B2 (en) | 1997-05-13 | 2002-10-22 | Micron Technology, Inc. | Method of compensating for a defect within a semiconductor device |
US20040240286A1 (en) * | 1997-05-13 | 2004-12-02 | Beigel Kurt D. | Method of preparing to test a capacitor |
US20040095822A1 (en) * | 1997-05-13 | 2004-05-20 | Beigel Kurt D. | Circuit and method for voltage regulation in a semiconductor device |
US6778452B2 (en) | 1997-05-13 | 2004-08-17 | Micron Technology, Inc. | Circuit and method for voltage regulation in a semiconductor device |
EP0907185A3 (en) * | 1997-09-25 | 1999-09-15 | Siemens Aktiengesellschaft | Floating bitline test mode with digitally controllable bitline equalizers |
EP0907185A2 (en) * | 1997-09-25 | 1999-04-07 | Siemens Aktiengesellschaft | Floating bitline test mode with digitally controllable bitline equalizers |
US6122760A (en) * | 1998-08-25 | 2000-09-19 | International Business Machines Corporation | Burn in technique for chips containing different types of IC circuitry |
US6330697B1 (en) * | 1999-04-20 | 2001-12-11 | International Business Machines Corporation | Apparatus and method for performing a defect leakage screen test for memory devices |
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Legal Events
Date | Code | Title | Description |
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AS | Assignment |
Owner name: SGS-THOMSON MICROELECTRONICS, INC., TEXAS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MCCLURE, DAVID CHARLES;REEL/FRAME:006820/0828 Effective date: 19931216 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
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FPAY | Fee payment |
Year of fee payment: 4 |
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FPAY | Fee payment |
Year of fee payment: 8 |
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FPAY | Fee payment |
Year of fee payment: 12 |
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AS | Assignment |
Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:STMICROELECTRONICS, INC. (FORMERLY KNOWN AS SGS-THOMSON MICROELECTRONICS, INC.);REEL/FRAME:030740/0481 Effective date: 20120523 |
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AS | Assignment |
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT, CALIFORNIA Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001 Effective date: 20160426 Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001 Effective date: 20160426 |
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Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT, MARYLAND Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001 Effective date: 20160426 Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001 Effective date: 20160426 |
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AS | Assignment |
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT, CALIFORNIA Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001 Effective date: 20160426 Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001 Effective date: 20160426 |
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AS | Assignment |
Owner name: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT, ILLINOIS Free format text: SECURITY INTEREST;ASSIGNORS:MICRON TECHNOLOGY, INC.;MICRON SEMICONDUCTOR PRODUCTS, INC.;REEL/FRAME:047540/0001 Effective date: 20180703 Owner name: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT, IL Free format text: SECURITY INTEREST;ASSIGNORS:MICRON TECHNOLOGY, INC.;MICRON SEMICONDUCTOR PRODUCTS, INC.;REEL/FRAME:047540/0001 Effective date: 20180703 |
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Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT;REEL/FRAME:047243/0001 Effective date: 20180629 |
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Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT;REEL/FRAME:050937/0001 Effective date: 20190731 |
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AS | Assignment |
Owner name: MICRON SEMICONDUCTOR PRODUCTS, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:051028/0001 Effective date: 20190731 Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:051028/0001 Effective date: 20190731 |