US4565979A - Double dielectric resonator stabilized oscillator - Google Patents
Double dielectric resonator stabilized oscillator Download PDFInfo
- Publication number
- US4565979A US4565979A US06/679,852 US67985284A US4565979A US 4565979 A US4565979 A US 4565979A US 67985284 A US67985284 A US 67985284A US 4565979 A US4565979 A US 4565979A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1864—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator
- H03B5/187—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device
- H03B5/1876—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/01—Varying the frequency of the oscillations by manual means
- H03B2201/014—Varying the frequency of the oscillations by manual means the means being associated with an element comprising distributed inductances and capacitances
- H03B2201/017—Varying the frequency of the oscillations by manual means the means being associated with an element comprising distributed inductances and capacitances the element being a dielectric resonator
Definitions
- This invention pertains to the field of frequency stabilized electronic oscillators, particularly those operating at microwave frequencies.
- U.S. Pat. No. 3,475,642 discloses the use of several dielectric resonators as a slow wave structure.
- a double dielectric resonator (1) is used to stabilize the frequency of an electronic oscillator which is typically operating at a microwave frequency.
- the oscillator may be of the reflection type (FIG. 1), the parallel feedback type (FIG. 2), or the series feedback type (FIG. 3).
- the resonator (1) comprises lower and upper dielectric elements (3, 5, respectively) separated by a nonzero magnetically couplable distance (d) and having principal axes (43, 45, respectively) that are aligned, or else parallel but slightly offset.
- Fine tuning is achieved by means of a tuning screw (37) rigidly affixed to the upper dielectric element (5).
- the screw (37) is preferably fabricated of a material having a thermal coefficient of expansion between those of the dielectric elements (3, 5) and conductive enclosure supporting walls (33, 35), to compensate for frequency drift caused by said components (3, 5, 33, 35) having different thermal coefficients of expansion.
- the oscillator may be tuned over a wider frequency
- the frequency range of the oscillator has a region which is substantially linear, simplifying frequency adjustments
- the oscillator may be temperature compensated by automatically changing the separation (d) between the dielectric elements (3, 5);
- the double dielectric resonator (1) has a higher Q than single dielectric resonators tuned with metal screws, producing a narrower and higher output power spike at the desired frequency of operation.
- FIG. 1 is a circuit diagram showing the double dielectric resonator 1 of the present invention used to stabilize a reflection type oscillator;
- FIG. 2 is a circuit diagram showing the double dielectric resonator 1 of the present invention used to stabilize a parallel feedback oscillator;
- FIG. 3 is a circuit diagram showing the double dielectric resonator 1 of the present invention used to stabilize a series feedback oscillator;
- FIG. 4 is an exploded isometric view showing the electrical (E) and magnetic (M) field lines coursing through double dielectric resonator 1;
- FIG. 5 is a graph showing the resonant frequency of double dielectric resonator 1, and hence the resonant frequency of the oscillator, as a function of the separation d between the dielectric elements 3, 5;
- FIG. 6 is a side view not to scale, partially in cross-section, showing resonator 1 in use in a microstrip oscillator circuit
- FIG. 7 is a graph showing reflected and non-reflected power in the FIG. 1 circuit.
- FIG. 8 is a graph showing the output power obtained from the FIG. 1 circuit when a double dielectric resonator 1 is employed as taught herein.
- This invention has its greatest applicability, and will be illustrated, in conjunction with circuits operating at microwave frequencies, i.e., frequencies higher than 1 GHz.
- the oscillator depicted in FIG. 1 is of the self-oscillating reflection type.
- a negative impedance device 7, shown as a dotted box in FIG. 1, generates an unstable sinusoidal RF oscillation along output line 13, which is depicted as a microstrip conductor.
- Negative impedance device 7 may be a field effect transistor 9 as depicted in FIG. 1, a bipolar transistor, or a negative impedance diode, such as a Gunn diode or Impatt diode.
- input microstrip conductor stub 11 is coupled to the gate of FET 9 and has a length that will produce a negative impedance.
- Output line 13 is coupled to the drain of FET 9, whose source is grounded. When a bipolar transistor is used for device 7, the collector usually takes the place of the drain and the emitter usually takes the place of the source.
- Optional series L/C circuit 15, 17, coupled between the gate and drain of FET 9, provides a low Q feedback path to enhance oscillations.
- D.c. blocking bias setting capacitor 21 is coupled between output conductor 13 and the output terminal.
- Double dielectric resonator 1 is magnetically loosely coupled to output line 13 at a point approximately a half wavelength from the output port (here the drain) of negative impedance device 9, and, acting as a bandstop filter, serves to reflect back a certain amount of power to injection lock the power appearing at the output conductor 13 at the resonant frequency of resonator 1. This is graphically illustrated in FIGS. 7 and 8.
- a double dielectric resonator 1 is tightly coupled to output line 13.
- tight coupling means that more than 3 dB of power is reflected back to device 7.
- the second curve differs from the first curve in that it has a dip surrounding the resonant frequency of resonator 1, representing the power reflected back to device 7.
- a third curve illustrated in FIG. 7 depicts the case in which double dielectric resonator 1 is loosely coupled to output line 13.
- loose coupling means that between 0.5 dB and 3 dB of power is reflected back to device 7.
- the third curve differs from the first curve in that it has a dip adjacent the resonant frequency of resonator 1, representing the amount of power reflected by resonator 1 back to device 7. Compared with the case of tight coupling, it can be seen that the reflected power occurs over a relatively narrow range of frequencies.
- FIG. 8 shows the power appearing at the output terminal side of output conductor 13 of the FIG. 1 oscillator for the tight and loose coupling cases illustrated in FIG. 7.
- the frequency scales of FIGS. 7 and 8 are aligned. It can be seen from FIG. 8 that for the tight coupling case, the output power is diffused over a relatively wide range of frequencies, whereas for the loose coupling case, the power is concentrated at a relatively narrow range of frequencies as desired for any oscillator.
- the desired degree of coupling between the resonator 1 and the conductor(s) 13-15 is best determined experimentally, and is a function of circuit parameters, including width of the conductor(s) 13-15.
- Resonator 1 may be spaced apart from the conductor(s) 13-15 (as illustrated in the Figs.) or overlap the conductor(s) 13-15, as long as not centered thereover, for then no coupling would occur.
- FIG. 2 illustrates a parallel feedback oscillator circuit employing the present invention.
- This oscillator as contrasted with the oscillators of FIGS. 1 and 3, does not self-oscillate; rather, it is an amplifier circuit.
- This type of oscillator requires that resonator 1 be magnetically coupled to the input as well as the output of the active device 9, which may be an FET or bipolar transistor. Power FETs 9 are appropriate because they have excellent phase noise characteristics. When a bipolar transistor is used for device 9, the collector can occupy the place of the drain and the emitter can occupy the place of the source, or vice versa.
- a not necessarily vertical coupling stub 14 is connected to horizontal output line 13 to provide a region at the device 9 output for coupling to resonator 1. Coupling between resonator 1 and the input of device 9 is accomplished by means of input stub 15, connected to the gate of the illustrated FET 9.
- Capacitors 19 and 21 are d.c. blocking bias setting capacitors connected to those ends of input line 15 and output line 13, respectively, that are remote from FET 9. As in FIG. 1, the source of FET 9 is grounded. Resistor 23, coupled between input blocking capacitor 19 and ground, has a value equal to the characteristic impedance of input conductor 15, usually 50 ohms. Use of the resistor 23 terminated gate assures good out-of-band stability and prevents the oscillator from engaging in spurious oscillations and mode jumping.
- Double dielectric resonator 1 is experimentally positioned with respect to the input line 15 and output stub 14 so that the power coupling coefficient times the gain of FET 9 equals 1, a necessary condition to sustain oscillations in this type of oscillator.
- FIG. 3 illustrates the invention in use with an oscillator of the series feedback type. Out of the three oscillator circuits depicted, this is the preferred approach, because (1) it is more convenient to couple the double dielectric resonator 1 to just one conductor 15 as compared with two conductors 14, 15 for the FIG. 2 circuit, and (2) it is not as sensitive to output loads as the FIG. 1 circuit, since resonator 1 is isolated from the output terminal by device 9.
- Device 9 may be a field effect or bipolar transistor.
- a reverse channel FET 9 is appropriate for high or medium power applications.
- the series feedback oscillator depicted in FIG. 3 is capable of self-oscillation.
- the FIG. 3 circuit is like that of FIG. 2 except that resonator 1 is not coupled to the output of device 9; rather, resonator 1 is coupled to just input line 15, at a point along line 15 determined by the desired frequency of self-oscillation. Resonator 1 should also be tuned to this same frequency, and serves to create a very high Q open circuit at this point.
- microstrip conductor 17 is positioned between the source of FET 9 and ground to enhance RF grounding. This is not necessary for the FIG. 2 circuit.
- FIG. 4 illustrates details of double dielectric resonator 1, which comprises lower and upper dielectric elements 3 and 5, respectively.
- Elements 3 and 5 preferably although not necessarily have the same physical dimensions and dielectric constant.
- elements 3 and 5 have the shape of solid cylindrical disks. The cylindrical shape is preferred because when an element 3, 5 is rotated by means of a tuning screw 37, just the separation d changes; the imaginary wall 47 surrounding resonator 1 does not change shape. This facilitates frequency tuning of the oscillator.
- axes 43 and 45 are denominated 43 and 45, respectively, and may be aligned as shown in FIG. 4. Alternatively, axes 43, 45 may be parallel but slightly offset as shown in FIGS. 1, 2, 3, and 6, in order to enhance the linearization of the curve of oscillator frequency versus separation d (FIG. 5).
- FIG. 4 shows that the electrical (E) field lines in each cylinder 3, 5 follow circular paths parallel to the plane in which the cylinder 3, 5 lies.
- the magnetic (M) field lines pass through each cylinder 3, 5 in large circles that are perpendicular to the planes in which cylinders 3, 5 lie.
- FIG. 4 illustrates the case where resonator 1 is not proximate large electrically conductive objects. The presence of such objects, e.g., ground planes 27 and 29, compresses the magnetic field lines, increasing the resonant frequency of resonator 1.
- the cylindrical boundary 47 of resonator 1 is a magnetic wall, i.e., an imaginary wall that short circuits the magnetic field.
- the dielectric elements 3, 5 are separated by a distance d which is greater than zero but not so great as to eliminate magnetic coupling between elements 3, 5. Additionally, d is less than D-a-b, where D is the available opening of the enclosure surrounding the oscillator (see FIG. 6), a is the thickness of element 3 and b is the thickness of element 5.
- Holes are optionally bored through cylinders 3 and 5, turning them into toroids, to increase the frequency spacing between the fundamental mode and spurious modes.
- FIG. 5 shows that the resonant frequency of resonator 1 as a function of separation distance d has a linear region bounded by frequencies f1 and f2.
- the resonator 1 resonant frequency controls the frequency of the oscillator for all thre oscillator types (FIGS. 1-3). It is often convenient to operate the oscillator in this linear region to facilitate linearly changing the frequency thereof. Thus, d is preferably chosen within this region.
- the Fiedziuszko et al. paper, supra illustrates how one calculates the resonant frequency of the resonator 1 from its physical dimensions (including d) and dielectric constant.
- FIG. 6 illustrates the embodiment in which the oscillator, as represented by microstrip conductor 25, is embodied in microstrip.
- the thin (typically about a mil thick) conductor portions 25 are spaced apart from an upper electrically conductive ground plane 27 and positioned on a dielectric substrate 31 which, in turn, rests on a lower electrically conductive ground plane 29.
- Electrically conductive walls 33, 35, which support and connect the ground planes 27, 29, are remote from the active elements (1, 25) of the oscillator.
- the invention can be used in other circuits, e.g., suspended substrate, in which substrate 31 and ground plane 29 are spaced apart, or waveguide circuits, in which conductive walls 33, 35 are proximate the active elements (1, 25) of the oscillator.
- Elements 3 and 5 should be fabricated of a material having a high Q (to focus the output power of the oscillator over a narrow frequency range), high temperature stability, and a high dielectric constant (to minimize the physical dimensions of the elements 3, 5). Normally there is an inverse relationship between a material's Q and its dielectric loss tangent. Suitable materials for elements 3, 5 are ResomicsTM R-03C and R-04C, manufactured by Murata Manufacturing Company. R-03C has an unloaded Q of 15,000 and a dielectric constant of 30. It consists of Ba(NiTa)0 3 -Ba(ZrZnTa)0 3 with added perovskite. R-04C has an unloaded Q of 8000 and a dielectric constant of 37. It consists of (ZrSn)Ti0 4 .
- Ground planes 27 and 29, as well as supporting walls 33 and 35, are typically fabricated of aluminum.
- Substrate 31 should have a dielectric constant substantially less than that of resonator 1.
- Suitable materials for substrate 31, which is typically about 10 mils thick, are alumina and DuroidTM (fiberglas filled teflon).
- Tuning screw 37 is preferably dielectric rather than metal, to avoid lowering the Q of resonator 1.
- Screw 37 is rigidly affixed to the top of dielectric element 5.
- Screw 37 has threads 39 which mate with threads 41 surrounding a hole through upper ground plane 27.
- the oscillator be temperature stabilized.
- the material for resonator 1 should be selected, if possible, with built-in temperature compensation, e.g., doping, to compensate for the fact that the material normally expands with increasing temperature, causing a corresponding frequency shift.
- resonator 1 When the materials for resonator 1 do not have built-in temperature compensation, or when this compensation is inadequate, some additional temperature compensation may be necessary.
- walls 33, 35 are fabricated of aluminum, which has a thermal expansion coefficient of approximately 23 ppm/°C.
- resonator 1 is fabricated of R-03C or R-04C, which have a thermal expansion coefficient of approximately 6 ppm/°C., as the temperature increases, d increases, raising the frequency of the oscillator.
- This can be compensated for by fabricating screw 37 of a material having a thermal expansion coefficient greater than that of resonator 1, but less than that of walls 33, 35.
- the reason for screw 37 to have a thermal expansion coefficient greater than that of resonator 1 is so that the spacing between element 5 and ground plane 27 will increase with temperature, decreasing d.
- the reason for screw 37 to have a thermal expansion coefficient less than that of walls 33, 35, is that increasing the spacing between element 5 and ground plane 27 in itself lowers the resonant frequency, because element 5 is more remote from ground plane 27, and thus the magnetic field lines of resonator 1 are not as compressed.
- An alternative method for accomplishing temperature compensation is for the two dielectric elements 3, 5 to have different resonant frequency temperature coefficients.
- the edge of element 3 was placed 0.032" from the near edge of input line 15, at a distance 0.400" from the gate of FET 9, a Toshiba S8803 reverse channel power FET.
- Conductor 15 was 0.090" wide.
- the separation distance d was varied from 0.001" to 0.035", resulting in an oscillator tuning range of 5.8 GHz to 6.3 GHz.
- Output power of the oscillator was 300 milliwatts.
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US06/679,852 US4565979A (en) | 1984-12-10 | 1984-12-10 | Double dielectric resonator stabilized oscillator |
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US06/679,852 US4565979A (en) | 1984-12-10 | 1984-12-10 | Double dielectric resonator stabilized oscillator |
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US4565979A true US4565979A (en) | 1986-01-21 |
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Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4692714A (en) * | 1986-10-20 | 1987-09-08 | Raytheon Company | Single resonator push-push oscillator |
US4982167A (en) * | 1988-09-02 | 1991-01-01 | Yukio Mori | Zone reflection type microwave oscillator |
WO1992020116A1 (en) * | 1991-05-09 | 1992-11-12 | Nokia Telecommunications Oy | Dielectric resonator |
EP0519308A2 (en) * | 1991-06-19 | 1992-12-23 | Siemens Telecomunicazioni S.P.A. | Resonating microwave cavity with double dielectric resonator and tunable resonance frequency |
US5204641A (en) * | 1992-03-11 | 1993-04-20 | Space Systems/Loral, Inc. | Conducting plane resonator stabilized oscillator |
US5219032A (en) * | 1992-03-13 | 1993-06-15 | Fairbanks Inc. | Microwave electronic load measuring system |
WO1996011511A1 (en) * | 1994-10-05 | 1996-04-18 | Nokia Telecommunications Oy | Dielectric resonator |
WO1996011509A1 (en) * | 1994-10-05 | 1996-04-18 | Nokia Telecommunications Oy | Dielectric resonator |
US5578969A (en) * | 1995-06-13 | 1996-11-26 | Kain; Aron Z. | Split dielectric resonator stabilized oscillator |
US5859576A (en) * | 1996-03-29 | 1999-01-12 | Illinois Superconductor Corporation | Extended spring loaded tuner |
US6011446A (en) * | 1998-05-21 | 2000-01-04 | Delphi Components, Inc. | RF/microwave oscillator having frequency-adjustable DC bias circuit |
US6147577A (en) * | 1998-01-15 | 2000-11-14 | K&L Microwave, Inc. | Tunable ceramic filters |
US6297708B1 (en) | 1999-02-18 | 2001-10-02 | Itron, Inc. | Temperature compensated high performance oscillator |
US6362708B1 (en) | 1998-05-21 | 2002-03-26 | Lucix Corporation | Dielectric resonator tuning device |
US6504440B2 (en) * | 2000-02-03 | 2003-01-07 | Sharp Kabushiki Kaisha | Dielectric resonance oscillation circuit |
US20040028501A1 (en) * | 2000-07-14 | 2004-02-12 | Tony Haraldsson | Tuning screw assembly |
US20040041661A1 (en) * | 2002-06-12 | 2004-03-04 | Takehiko Yamakawa | Dielectric filter, communication apparatus, and method of controlling resonance frequency |
US20060152306A1 (en) * | 2003-02-24 | 2006-07-13 | Nec Corporation | Dielectric resonator, dielectric resonator frequency adjusting method, and dielectric resonator integrated circuit |
CN102386847A (en) * | 2011-09-21 | 2012-03-21 | 张家港保税区灿勤科技有限公司 | Dielectric resonator oscillator with high stability and low noise |
EP2809003A3 (en) * | 2013-05-08 | 2015-02-25 | STEINEL GmbH | High frequency oscillator device |
US20220149514A1 (en) * | 2020-11-11 | 2022-05-12 | Yazaki Corporation | Thin antenna |
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Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4692714A (en) * | 1986-10-20 | 1987-09-08 | Raytheon Company | Single resonator push-push oscillator |
US4982167A (en) * | 1988-09-02 | 1991-01-01 | Yukio Mori | Zone reflection type microwave oscillator |
WO1992020116A1 (en) * | 1991-05-09 | 1992-11-12 | Nokia Telecommunications Oy | Dielectric resonator |
US5315274A (en) * | 1991-05-09 | 1994-05-24 | Nokia Telecommunications Oy | Dielectric resonator having a displaceable disc |
AU650746B2 (en) * | 1991-05-09 | 1994-06-30 | Nokia Telecommunications Oy | Dielectric resonator |
EP0519308A2 (en) * | 1991-06-19 | 1992-12-23 | Siemens Telecomunicazioni S.P.A. | Resonating microwave cavity with double dielectric resonator and tunable resonance frequency |
EP0519308A3 (en) * | 1991-06-19 | 1993-08-04 | Siemens Telecomunicazioni S.P.A. | Resonating microwave cavity with double dielectric resonator and tunable resonance frequency |
AU650545B2 (en) * | 1991-06-19 | 1994-06-23 | Siemens Telecomunicazioni S.P.A. | Resonating microwave cavity with double dielectric resonator and tunable resonance frequency |
US5204641A (en) * | 1992-03-11 | 1993-04-20 | Space Systems/Loral, Inc. | Conducting plane resonator stabilized oscillator |
US5219032A (en) * | 1992-03-13 | 1993-06-15 | Fairbanks Inc. | Microwave electronic load measuring system |
WO1993018374A1 (en) * | 1992-03-13 | 1993-09-16 | Fairbanks, Inc. | Microwave electronic load measuring system |
AU687260B2 (en) * | 1994-10-05 | 1998-02-19 | Nokia Telecommunications Oy | Dielectric resonator |
US5677653A (en) * | 1994-10-05 | 1997-10-14 | Nokia Telecommunications Oy | Combined coarse and fine dielectric resonator frequency tuning mechanism |
US5703548A (en) * | 1994-10-05 | 1997-12-30 | Nokia Telecommunications Oy | Dielectric resonator having adjustment plates movable with respect to resonator disc and each other |
WO1996011511A1 (en) * | 1994-10-05 | 1996-04-18 | Nokia Telecommunications Oy | Dielectric resonator |
AU687258B2 (en) * | 1994-10-05 | 1998-02-19 | Nokia Telecommunications Oy | Dielectric resonator |
WO1996011509A1 (en) * | 1994-10-05 | 1996-04-18 | Nokia Telecommunications Oy | Dielectric resonator |
US5578969A (en) * | 1995-06-13 | 1996-11-26 | Kain; Aron Z. | Split dielectric resonator stabilized oscillator |
US5859576A (en) * | 1996-03-29 | 1999-01-12 | Illinois Superconductor Corporation | Extended spring loaded tuner |
US6147577A (en) * | 1998-01-15 | 2000-11-14 | K&L Microwave, Inc. | Tunable ceramic filters |
US6362708B1 (en) | 1998-05-21 | 2002-03-26 | Lucix Corporation | Dielectric resonator tuning device |
US6011446A (en) * | 1998-05-21 | 2000-01-04 | Delphi Components, Inc. | RF/microwave oscillator having frequency-adjustable DC bias circuit |
US6297708B1 (en) | 1999-02-18 | 2001-10-02 | Itron, Inc. | Temperature compensated high performance oscillator |
US6504440B2 (en) * | 2000-02-03 | 2003-01-07 | Sharp Kabushiki Kaisha | Dielectric resonance oscillation circuit |
US7227434B2 (en) * | 2000-07-14 | 2007-06-05 | Allgon Ab | Tuning screw assembly |
US20040028501A1 (en) * | 2000-07-14 | 2004-02-12 | Tony Haraldsson | Tuning screw assembly |
US20040041661A1 (en) * | 2002-06-12 | 2004-03-04 | Takehiko Yamakawa | Dielectric filter, communication apparatus, and method of controlling resonance frequency |
US20060152306A1 (en) * | 2003-02-24 | 2006-07-13 | Nec Corporation | Dielectric resonator, dielectric resonator frequency adjusting method, and dielectric resonator integrated circuit |
US7378925B2 (en) * | 2003-02-24 | 2008-05-27 | Nec Corporation | Dielectric resonator, dielectric resonator frequency adjusting method, and dielectric resonator integrated circuit |
CN102386847A (en) * | 2011-09-21 | 2012-03-21 | 张家港保税区灿勤科技有限公司 | Dielectric resonator oscillator with high stability and low noise |
EP2809003A3 (en) * | 2013-05-08 | 2015-02-25 | STEINEL GmbH | High frequency oscillator device |
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US20220149514A1 (en) * | 2020-11-11 | 2022-05-12 | Yazaki Corporation | Thin antenna |
US11784400B2 (en) * | 2020-11-11 | 2023-10-10 | Yazaki Corporation | Thin antenna |
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