US3810794A - Preparation of gap-si heterojunction by liquid phase epitaxy - Google Patents

Preparation of gap-si heterojunction by liquid phase epitaxy Download PDF

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US3810794A
US3810794A US00075001A US7500170A US3810794A US 3810794 A US3810794 A US 3810794A US 00075001 A US00075001 A US 00075001A US 7500170 A US7500170 A US 7500170A US 3810794 A US3810794 A US 3810794A
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gap
solution
substrate
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saturated
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G Antypas
F Rosztoczy
W Stein
Szeremy S Von
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Varian Medical Systems Inc
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Varian Associates Inc
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Priority to NL7113128A priority patent/NL7113128A/xx
Priority to FR7134385A priority patent/FR2108499A5/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/059—Germanium on silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Definitions

  • the molten, saturated solution was brought into contact with a Si single crystal substrate and cooled, causing the GaP to form an epitaxial layer on the Si surface.
  • the crystal lattice structure and dimensions of Si and GaP crystals are very similar.
  • the preferred physical properties of the solvent are: a relatively high solubility for GaP; a relatively low solubility for Si; and a relatively low solubility of the selected solvent in the epitaxially grown GaP.
  • This invention relates to the epitaxial growth of GaP on Si by liquid phase epitaxy and more particularly to the use of Pb and/or Sn as solvents for that purpose.
  • FIG. 1 is a sectional view of a tiltable furnace tube in the standby position showing the saturated solution and the silicon substrate before contact;
  • FIG. 2 is a sectional view of the tiltable furnace in the growing position showing the saturated solution covering the Si substrate during epitaxy;
  • FIG. 3 is a plot of temperature versus time depicting the thermal cycle employed by the apparatus of FIG. 1 and 2.
  • FIG. 1 there is shown a tiltable furnace tube 10 in a first or standby position, containing a boat 12.
  • Boat 12 is made of a refractory material, for example,
  • a solution 14 of GaP and Si in a solvent is shown at the lower end of boat 12.
  • the solution is preferably saturated with GaP to expedite epitaxial growth later.
  • Solution 14 is maintained in the molten state by a furnace (not shown).
  • Excess GaP 15 on solution 14 assures that the solution is saturated.
  • a Si wafer or substrate 16 is mounted at the upper end of boat 12 by means of a refractory hold down screw 18 which is also a refractory material. It is preferable that Si substrate 16 be a single crystal having a crystal orientation of (111) or A flow of inert gas, preferably H is maintained through furnace tube 10 to prevent oxidation of molten solution 14.
  • FIG. 1 Contact between solution 14 and substrate 16 is established by tilting furnace tube 10 into a second or growing position as shown in FIG. 2.
  • Solution 14 rolls to the opposite end of furnace tube 10' and covers substrate 16 causing a GaP crystal 20 to form.
  • the apparatus of FIG. 1 is similar in design to the H. Nelson apparatus described in RCSA Review, vol. 24, page 603 (1963). Clearly other types of solution-substrate contacting apparatus may be employed.
  • FIG. 3 depicts the thermal cycle employed in growing GaP layer 20 on substrate 16 using the apparatus of FIG. 1.
  • the temperature is elevated with furnace tube 10 in the standby position.
  • time t furnace is maintained at a preselected constant temperature Thigh to melt the initial charge and form saturated solution 14.
  • Thigh a preselected constant temperature
  • the temperature is slowly decreased to T causing GaP to form an epitaxial layer onto substrate 16.
  • the lattice constant of GaP is 5.4505 and the lattice constant of Si is 5.43072, sufficiently matched to permit GaP to epitaxially grow on the surface of Si substrate 16.
  • a scraper apparatus not shown.
  • the solvent or carrier material in saturated solution 14 may be formed by more than one material, and is selected on the basis of the following physical properties:
  • Pb solvent embodiment Pb is a suitable solvent for the present technique.
  • Pb has a low solubility coefficient for Si (about 0.1 mol percent at 950 C.) and a high solubility coeflicient of GaP (about 2 mol percent at 950 C.).
  • saturated solution 14 was prepared by thoroughly mixing 13 grams of Pb and 0.3 gram of GaP. The amount of GaP is more than can be dissolved in 13 grams of Pb at the Thigh involved which guaranteed that the solution was saturated. The mixture was placed in boat 12 and maintained at 950 C. for 60 minutes. A small portion of the Ga? remained undissolved. The system was quenched and subsequently saturated with Si at 950 C. for 60 minutes to prevent Si substrate 16 from dissolving into solution 14 during the FIG.
  • Thigh (in this case preferably 950 C.) is not critical and is a function of the solubility coefficients of the materials and the desired composition of solution 14.
  • solution 14 should be about 1% by weight of GaP.
  • the concentration of GaP can be as low as .1% by weight, in which case the epitaxial growth proceeds very slowly.
  • the concentration of GaP may be as high as 20% or even higher.
  • T in this case preferably 800 C.
  • time periods described above are representative of the time required for the solution to reach equilibrium without external agitation. Atomic diffusion was the primary means through which equilibrium was obtained. The time periods may be shortened considerably by agitating solution 14 or rocking boat 12. In any event the time periods are not generally critical.
  • Sn is also a suitable solvent having a relatively low solubility coefiicient for Si and a relatively high solubility coefiicient of GaP.
  • a saturated solution of GaP in Sn was prepared by placing grams of Sn and 0.5 gram of GaP in boat 12 (more than sufiicient GaP for the temperature involved) and maintaining the temperature at 850 C. for a period of 60 minutes.
  • Solution 14 was quenched and Si saturated as described in the Pb embodiment and brought into contact with substrate 16. The temperature was lowered to 650 C. over a period of 3 hours, resulting in a micron GaP layer epitaxially grown on Si.
  • the quenching steps can be eliminated by initially placing all of solution 14 constituents (GaP, Pb and/or Sn, Si) at the lower end of the boat in the standby position. Si substrate 16 is then mounted at the upper end of boat 12. The temperature of the system is cycled only once as depicted in FIG. 3.
  • the resulting GaP-Si heterojunction has a low cost Si base.
  • the price of the Si substrate is approximately 1000 4 times less than the price of suitable GaP substrates.
  • the uncoated side of the Si substrate is also suitable for use as part of the integrated circuit employed in conjunction with the GaP layer.
  • a vertical structure may be employed wherein the substrate is dipped into the solution (see F. E. -Rosztoczy, Varian Technical Journal, No. 3, page 1 (Spring 1970).
  • a steady state-temperature gradient technique may be employed which does not employ a thermal cycle as depicted in FIG. 3. Instead, the substrate is maintained at a constant temperature slightly lower than the source of GaP causing a gradient across the solution.
  • concentration by weight of GaP in the solution is from about 0.1% to about 20%.

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Abstract

A SATURATED MOLTEN SOLUTION OF GAP AND SI IN A SITUABLE SOLVENT (PB,SN) WAS PREPARED. THE MOLTEN, SATURATED SOLUTION WAS BROUGHT INTO CONTACT WITH A SI SINGLE CRYSTAL SUBSTRATE AND COOLED, CAUSING THE GAP TO FORM AN EPITAXIAL LAYER ON THE SI SURFACE. THE CRYSTAL LATTICE STRUCTURE AND DIMENSIONS OF SI AND GAP CRYSTALS ARE VERY SIMILAR. THE PREFERRED PHYSICAL PROPERTIES OF THE SOLVENT ARE: A RELATIVELY HIGH SOLUBILITY FOR GAP; A RELATIVELY LOW SOLUBILITY FOR SI; AND A RELATIVELY LOW SOLUBILITY OF THE SELECTED SOLVENT IN THE EPITAXIALLY GROWN GAP.

Description

May 14, 1914 TEMPERATURE G. A.A YPAS ETAL 3.3%,794 PREPARATION OF GAP- HETEROJUNCTION UY LlQUJD PHASE EPITAXY Filed Sept. 24, 1970 TILTABLE TILT TOGROW POSITION I E I RETURN TO E" I ig fi'w GEORKQEVAEEZ$PAS 1 I FERENC eaqszmcw EIEHGIQDEO NE EMY I l D E United States Patent O US. Cl. 148172 9 Claims ABSTRACT OF THE DISCLOSURE A saturated molten solution of GaP and Si in a suitable solvent (Pb, Sn) was prepared. The molten, saturated solution was brought into contact with a Si single crystal substrate and cooled, causing the GaP to form an epitaxial layer on the Si surface. The crystal lattice structure and dimensions of Si and GaP crystals are very similar. The preferred physical properties of the solvent are: a relatively high solubility for GaP; a relatively low solubility for Si; and a relatively low solubility of the selected solvent in the epitaxially grown GaP.
FIELD OF THE INVENTION This invention relates to the epitaxial growth of GaP on Si by liquid phase epitaxy and more particularly to the use of Pb and/or Sn as solvents for that purpose.
DESCRIPTION OF THE PRIOR ART It is known to epitaxially deposit GaP onto Si by fused salt electrolysis as reported by I. J. Cuomo and R. J. Gambino, J. Electrochem. Soc: Vol. 115, page 755 (July 1968). Further, liquid phase epitaxy has been employed to produce heterojunctions such as Ge-Si as reported by K. Kurata and T. Hirai, J. Electrochem. Soc.: Vol. 115, page 869 (August 1968), and Ge on GaAs as reported by F. Rosztoczy, J. Electrochem. Soc: Vol. 115, page 3280 (1968).
Gas phase heteroepitaxy has also been reported by Robert W. Thomas, J. Electrochem. Soc: Vol. 116, No. 10, (1969) wherein epitaxy of GaP on single crystal silicon was achieved using gallium and phosphorous alkyls.
Further hereteroepitaxial growth of GaP on single crystal silicon was achieved by Osamu Igaroshi as reported in Journal of Applied Physics, Vol. 41, page 3190 (1970), This technique involved the evaporation of the compound onto a suitably prepared silicon substrate.
SUMMARY OF THE INVENTION BRIEF DESCRIPTION OF THE DRAWING Further objects and advantages of the present invention and the method of growing GaP on Si will become apparent from the following detailed description taken in conjunction with the, drawings in which:
FIG. 1 is a sectional view of a tiltable furnace tube in the standby position showing the saturated solution and the silicon substrate before contact;
FIG. 2 is a sectional view of the tiltable furnace in the growing position showing the saturated solution covering the Si substrate during epitaxy; and
FIG. 3 is a plot of temperature versus time depicting the thermal cycle employed by the apparatus of FIG. 1 and 2.
Referring to FIG. 1, there is shown a tiltable furnace tube 10 in a first or standby position, containing a boat 12.
Boat 12 is made of a refractory material, for example,
graphite, BN, or quartz. A solution 14 of GaP and Si in a solvent is shown at the lower end of boat 12. The solution is preferably saturated with GaP to expedite epitaxial growth later. Solution 14 is maintained in the molten state by a furnace (not shown). Excess GaP 15 on solution 14 assures that the solution is saturated. A Si wafer or substrate 16 is mounted at the upper end of boat 12 by means of a refractory hold down screw 18 which is also a refractory material. It is preferable that Si substrate 16 be a single crystal having a crystal orientation of (111) or A flow of inert gas, preferably H is maintained through furnace tube 10 to prevent oxidation of molten solution 14. Contact between solution 14 and substrate 16 is established by tilting furnace tube 10 into a second or growing position as shown in FIG. 2. Solution 14 rolls to the opposite end of furnace tube 10' and covers substrate 16 causing a GaP crystal 20 to form. The apparatus of FIG. 1 is similar in design to the H. Nelson apparatus described in RCSA Review, vol. 24, page 603 (1963). Clearly other types of solution-substrate contacting apparatus may be employed.
FIG. 3 depicts the thermal cycle employed in growing GaP layer 20 on substrate 16 using the apparatus of FIG. 1. From t to t the temperature is elevated with furnace tube 10 in the standby position. From time I, to time t furnace is maintained at a preselected constant temperature Thigh to melt the initial charge and form saturated solution 14. At time furnace tube 10 is tilted into the growth position and solution 14 rolls across boat 12 and covers substrate 16. The temperature is slowly decreased to T causing GaP to form an epitaxial layer onto substrate 16. The lattice constant of GaP is 5.4505 and the lattice constant of Si is 5.43072, sufficiently matched to permit GaP to epitaxially grow on the surface of Si substrate 16. At time t furnace tube 10 is tilted back to the standby position causing solution 14 to return to its original position. The excess solution is removed from the surface of substrate 16 by a scraper apparatus (not shown).
The solvent or carrier material in saturated solution 14 may be formed by more than one material, and is selected on the basis of the following physical properties:
(1) Relatively low solubility coefl-lcient for -Si.-This limits the amount of Si that dissolves into the solution 14. In this way the doping and other effects of silicon can be minimized.
(l) Relatively high solubility coefficient for GaP.-- This permits the GaP to go into solution for epitaxial growth onto the substrate.
(2) Relatively high solubility coefiicient for GaP.--This permits the Ga? to go into solution for epitaxial growth onto the substrate.
(3) A low solubility coefiicient into the GaP crystal which is being grown.-This limits the concentration of solvent included in the GaP crystal which minimized the doping effect of the solvent.
(4') Preferably removable by cleaning solvent such as H01 and HNO .--After the GaP-Si junction has been prepared, it may be desirable to clean the Ga? surface to remove any carrier solvent which was not removed by scraping molten solution 14 in furnace tube 10.
Pb solvent embodiment Pb is a suitable solvent for the present technique. Pb has a low solubility coefficient for Si (about 0.1 mol percent at 950 C.) and a high solubility coeflicient of GaP (about 2 mol percent at 950 C.). In this embodiment saturated solution 14 was prepared by thoroughly mixing 13 grams of Pb and 0.3 gram of GaP. The amount of GaP is more than can be dissolved in 13 grams of Pb at the Thigh involved which guaranteed that the solution was saturated. The mixture Was placed in boat 12 and maintained at 950 C. for 60 minutes. A small portion of the Ga? remained undissolved. The system was quenched and subsequently saturated with Si at 950 C. for 60 minutes to prevent Si substrate 16 from dissolving into solution 14 during the FIG. 2 contact step. The system was quenched again and Si substrate 16 was placed in boat 12 at the opposite end thereof from saturated solution 14. The quenching steps are not shown in FIG. 3. The temperature of the system was raised to 950 C. (T and maintained for 30 minutes. Furnace tube 10 was tilted into the growing position and solution 14 came in contact with substrate 16. The temperature was dropped to 800 C. (T over a period of 60 minutes. Furnace tube 10 was tilted back to the standby position. The resulting epitaxial layer 20 was approximately 10 microns thick.
Thigh (in this case preferably 950 C.) is not critical and is a function of the solubility coefficients of the materials and the desired composition of solution 14. Preferably solution 14 should be about 1% by weight of GaP. The concentration of GaP can be as low as .1% by weight, in which case the epitaxial growth proceeds very slowly. The concentration of GaP may be as high as 20% or even higher. At the high GaP concentrations, the epitaxial growth proceeds rapidly causing defects in the crystal lattice and incorporation of impurities from the solution. T (in this case preferably 800 C.) was selected on the basis of the required thickness of GaP layer 20. Slower cooling rates tend to produce higher quality crystals, and of course avoid the possibility of constitutional super cooling. Subject to these considerations, the temperatures and cooling rate are not critical.
The time periods described above are representative of the time required for the solution to reach equilibrium without external agitation. Atomic diffusion was the primary means through which equilibrium was obtained. The time periods may be shortened considerably by agitating solution 14 or rocking boat 12. In any event the time periods are not generally critical.
Sn solvent embodiment Sn is also a suitable solvent having a relatively low solubility coefiicient for Si and a relatively high solubility coefiicient of GaP. A saturated solution of GaP in Sn was prepared by placing grams of Sn and 0.5 gram of GaP in boat 12 (more than sufiicient GaP for the temperature involved) and maintaining the temperature at 850 C. for a period of 60 minutes. Solution 14 was quenched and Si saturated as described in the Pb embodiment and brought into contact with substrate 16. The temperature was lowered to 650 C. over a period of 3 hours, resulting in a micron GaP layer epitaxially grown on Si.
If desired, the quenching steps can be eliminated by initially placing all of solution 14 constituents (GaP, Pb and/or Sn, Si) at the lower end of the boat in the standby position. Si substrate 16 is then mounted at the upper end of boat 12. The temperature of the system is cycled only once as depicted in FIG. 3.
The resulting GaP-Si heterojunction has a low cost Si base. The price of the Si substrate is approximately 1000 4 times less than the price of suitable GaP substrates. The uncoated side of the Si substrate is also suitable for use as part of the integrated circuit employed in conjunction with the GaP layer.
Clearly various changes may be made in the structude and embodiments shown herein without departing from the concept of the present invention. In addition to the horizontal apparatus of FIGS. 1 and 2, a vertical structure may be employed wherein the substrate is dipped into the solution (see F. E. -Rosztoczy, Varian Technical Journal, No. 3, page 1 (Spring 1970). Further a steady state-temperature gradient technique may be employed which does not employ a thermal cycle as depicted in FIG. 3. Instead, the substrate is maintained at a constant temperature slightly lower than the source of GaP causing a gradient across the solution.
What is claimed is:
1. In a method for forming a binary GaP layer on a Si substrate through liquid phase epitaxy comprising the steps of:
providing a solution of GaP in a solvent at a first temperature wherein the solvent is at least one element selected from the group consisting of Pb and Sn; providing a suitable Si substrate;
establishing contact between the Si substrate and the solution; and
causing the Ga? in solution to epitaxially form binary GaP over the Si substrate by lowering the temperature of at least that part of the solution proximate the substrate to a second temperature which is lower than the first temperature.
2. The method of claim 1 wherein the solvent is Pb.
3. The method of claim 2 wherein the first temperature is 950 C. and the second temperature is 800 C.
4. The method of claim 1 wherein the solvent is Sn.
5. The method of claim 4 wherein the first temperature is 850 C. and the second temperature is 650 C.
6. The method of claim 1 wherein the solution of GaP and solvent is saturated with GaP and the Si substrate is a single Si crystal.
7. The method of claim 6 wherein the solution of GaP and solvent is saturated with Si before contact with the Si substrate.
8. The method of claim 6 wherein the concentration by weight of GaP in the solutionis from about 0.1% to about 20%.
9. The method of claim 6 wherein the concentration by weight of GaP in the solution is about 1%.
References Cited UNITED STATES PATENTS 3,278,342 10/1966 John et al 1481.6
OTHER REFERENCES Woodall, Growth of Ga in P on Si substrates, IBM Technical Disclosure Bulletin, vol. 12, No. 11, April 1970I p. 1834.
J. Electrochem. Soc., vol. 115, pp. 755-9, July 1968.
J. Electrochem. Soc., vol. 116, No. 10, pp. 1449-50.
Journal of Applied Physics, vol. 41, pp. 3190-2 (1970).
GEORGE T. OZAKI, Primary Examiner U.S. c1. X.R. 14s 171, 173; 117-201 5
US00075001A 1970-09-24 1970-09-24 Preparation of gap-si heterojunction by liquid phase epitaxy Expired - Lifetime US3810794A (en)

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GB4114571A GB1332389A (en) 1970-09-24 1971-09-03 Preparation of gap-si heterojunction by liquid phase epitaxy
DE19712144828 DE2144828A1 (en) 1970-09-24 1971-09-08 Process for forming a GaP layer on a Si support
NL7113128A NL7113128A (en) 1970-09-24 1971-09-23
FR7134385A FR2108499A5 (en) 1970-09-24 1971-09-24

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128440A (en) * 1978-04-24 1978-12-05 General Electric Company Liquid phase epitaxial method of covering buried regions for devices
US4591408A (en) * 1982-11-16 1986-05-27 Stauffer Chemical Company Liquid phase growth of crystalline polyphosphide
WO1987007313A1 (en) * 1986-05-28 1987-12-03 Massachusetts Institute Of Technology Epitaxial growth
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
US5057287A (en) * 1988-11-01 1991-10-15 Sfa, Inc. Liquid encapsulated zone melting crystal growth method and apparatus
US5278452A (en) * 1991-02-13 1994-01-11 Koito Manufacturing Co., Ltd. Lighting apparatus for vehicular discharge lamp

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DE4310612C1 (en) * 1993-03-31 1994-11-10 Max Planck Gesellschaft Liquid phase heteroepitaxy method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128440A (en) * 1978-04-24 1978-12-05 General Electric Company Liquid phase epitaxial method of covering buried regions for devices
US4591408A (en) * 1982-11-16 1986-05-27 Stauffer Chemical Company Liquid phase growth of crystalline polyphosphide
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FR2108499A5 (en) 1972-05-19
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GB1332389A (en) 1973-10-03

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