US20150007650A1 - Sensors for measuring temperature, pressure transducers including temperature sensors and related assemblies and methods - Google Patents
Sensors for measuring temperature, pressure transducers including temperature sensors and related assemblies and methods Download PDFInfo
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- US20150007650A1 US20150007650A1 US13/934,058 US201313934058A US2015007650A1 US 20150007650 A1 US20150007650 A1 US 20150007650A1 US 201313934058 A US201313934058 A US 201313934058A US 2015007650 A1 US2015007650 A1 US 2015007650A1
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- temperature sensor
- pressure transducer
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Images
Classifications
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- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
- E21B47/06—Measuring temperature or pressure
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- E21B47/065—
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- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
- E21B47/06—Measuring temperature or pressure
- E21B47/07—Temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0092—Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
- G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
- G01L9/0022—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element
Definitions
- Embodiments of the present disclosure relate to sensors for measurement of temperature and, more particularly, to electronic temperature sensors for measurement of temperature for use in, for example, downhole assemblies including one or more quartz resonator sensors and to related assemblies and methods thereof.
- Quartz resonator pressure sensors typically have a crystal resonator located inside a housing exposed to ambient bottom-hole fluid pressure and temperature. Electrodes on the resonator element coupled to a high frequency power source drive the resonator and result in shear deformation of the crystal resonator. The electrodes also detect the resonator response to pressure and temperature and are electrically coupled to conductors extending to associated power and processing electronics isolated from the ambient environment.
- a quartz resonator sensor as disclosed in U.S. Pat. Nos. 3,561,832 and 3,617,780, includes a cylindrical design with the resonator formed in a unitary fashion in a single piece of quartz. End caps of quartz are attached to close the structure.
- a thickness shear mode quartz resonator sensor assembly may include a first sensor in the form of a primarily pressure sensitive thickness shear mode quartz crystal resonator exposed to ambient pressure and temperature, a second sensor in the form of a temperature sensitive quartz crystal resonator exposed only to ambient temperature, a third reference crystal in the form of quartz crystal resonator exposed only to ambient temperature, and supporting electronics.
- the first sensor changes frequency in response to changes in applied external pressure and temperature with a major response component being related to pressure changes, while the output frequency of the second sensor is used to temperature compensate temperature-induced frequency excursions in the first sensor.
- the reference crystal if used, generates a reference signal, which is only slightly temperature-dependent, against or relative to which the pressure- and temperature-induced frequency changes in the first sensor and the temperature-induced frequency changes in the second sensor can be compared.
- Such comparison may be achieved by, for example, frequency mixing frequency signals and using the reference frequency to count the signals from the first and second sensors for frequency measurement.
- Prior art devices of the type referenced above including one or more thickness shear mode quartz resonator sensors exhibit a high degree of accuracy even when implemented in an environment such as a downhole environment exhibiting high pressures and temperatures.
- each of the quartz resonator sensors that are included in a pressure transducer may be relatively expensive to fabricate, as each quartz resonator sensor must be individually manufactured.
- the overall size and positioning requirements of the multiple quartz resonator sensors in a pressure transducer may limit the size, shape, and configuration of the assembly.
- the present disclosure includes a quartz resonator pressure transducer for use in a subterranean borehole.
- the quartz resonator pressure transducer includes a pressure housing comprising at least one chamber, an electronics housing comprising an electronics assembly, and a quartz pressure sensor in communication with the at least one chamber and for measuring pressure of a fluid disposed within the at least one chamber.
- the electronics assembly is configured to drive the quartz pressure sensor at a selected frequency and to sense a pressure-related frequency response from the quartz pressure sensor.
- the quartz resonator pressure transducer further includes an electronic temperature sensor electrically coupled to the electronics assembly and configured to output a temperature signal to the electronics assembly.
- the present disclosure includes a temperature sensor.
- the temperature sensor includes a constant current generator configured to generate a constant current (ICONST), a proportional to absolute temperature (PTAT) current generator configured to generate a PTAT current, and a relaxation oscillator operably coupled to the constant current generator and the PTAT current generator.
- the relaxation oscillator is configured to charge and discharge a capacitor responsive to a complementary to absolute temperature current comprising a difference between the constant current and the PTAT current.
- the present disclosure includes a pressure transducer that may include a temperature sensor as described above.
- the present disclosure includes a method of monitoring pressure in a subterranean borehole.
- the method includes resonating a quartz pressure sensor at at least one frequency with an electronics assembly of a pressure transducer under an applied fluid pressure, monitoring a frequency output of the quartz pressure sensor with the electronics assembly, resonating a quartz reference sensor at at least one frequency with the electronics assembly, monitoring a frequency output of the quartz reference sensor with the electronics assembly, powering an electronic temperature sensor with the electronics assembly, and monitoring a frequency output of the electronic temperature sensor with the electronics assembly.
- FIG. 1 is a partial cross-sectional view of pressure transducer including an electronic temperature sensor in accordance with an embodiment of the present disclosure
- FIG. 2A is a schematic block diagram of an electronic sensor according to an embodiment of the present disclosure.
- FIG. 2B is a schematic block diagram of the current generators of FIG. 2A .
- FIG. 2C is a simplified schematic block diagram of the relaxation oscillator of FIG. 2A .
- FIG. 3 is a schematic block diagram of an electronic sensor according to an embodiment of the present disclosure.
- FIG. 4 is a partial cross-sectional view of pressure transducer including an electronic temperature sensor in accordance with another embodiment of the present disclosure
- FIG. 5 is a side perspective view of an electrical temperature sensor package for use in, for example, the pressure transducer shown in FIG. 4 ;
- FIG. 6 is a side perspective view of the electrical temperature sensor package shown in FIG. 5 with the cover removed;
- FIG. 7 is another side perspective view of the electrical temperature sensor package shown in FIG. 5 ;
- FIG. 8 is a partial cross-sectional view of pressure transducer including an electronic temperature sensor in accordance with yet another embodiment of the present disclosure.
- FIG. 9 is a partial cross-sectional view of pressure transducer including an electronic temperature sensor in accordance with yet another embodiment of the present disclosure.
- FIG. 1 is a perspective view of a pressure transducer 100 including an electronic temperature sensor.
- the pressure transducer 100 may include a pressure housing 102 having a pressure sensor 104 disposed in a chamber 106 in the pressure housing 102 .
- the chamber 106 in the pressure housing 102 may be in communication with an environment exterior to the pressure transducer 100 in order to determine one or more environmental conditions in the exterior environments (e.g., a pressure and/or temperature of the exterior environment).
- the chamber 106 may be in fluid communication with an isolation element 108 (e.g., a diaphragm assembly, a bladder assembly, a bellows assembly, and combinations thereof).
- an isolation element 108 e.g., a diaphragm assembly, a bladder assembly, a bellows assembly, and combinations thereof.
- the isolation element 108 may act to transmit pressure and/or temperature exterior to the pressure transducer 100 to sensors within the pressure transducer 100 (e.g., via a fluid within the pressure transducer).
- the chamber 106 in the pressure housing 102 may be in fluid communication with isolation element 108 (e.g., via channel 110 ). Fluid may be disposed in the chamber 106 around the pressure sensor 104 , in the channel 110 , and in the isolation element 108 to transmit the pressure and/or temperature from the exterior of the pressure transducer 100 .
- the fluid within pressure transducer 100 may comprise a highly incompressible, low thermal expansion fluid such as, for example, oil (e.g., a Paratherm or sebacate oil). The pressure and thermal expansion of the fluid may be sensed by the pressure sensor 104 (e.g., a quartz crystal sensing element).
- the pressure transducer 100 may include one or more additional sensors that are utilized along with the pressure sensor 102 to determine environmental conditions.
- the pressure transducer 100 may include a temperature sensor 112 that is at least partially isolated from (e.g., by a pressure feedthrough portion 114 that includes bulkhead 115 ) from the fluid within the pressure housing 102 that is in communication with the exterior environment.
- the temperature sensor 112 is utilized to sense the temperature of the exterior environment (e.g., as is it transmitted to temperature sensor 112 through the housing of the pressure transducer 100 ).
- the pressure transducer 100 may include a reference sensor 116 that is at least partially isolated from (e.g., by the pressure bulkhead 114 ) from the fluid within the pressure housing 102 that is in communication with the exterior environment.
- a reference sensor 116 may be utilized for comparison with other sensors (e.g., the pressure sensor 102 , the temperature sensor 112 , or combinations thereof).
- An electronics housing 118 is coupled to the pressure housing 102 .
- the electronics housing 118 include an electronics assembly 120 that is at least partially isolated from the fluid within the pressure housing 102 that is in communication with the exterior environment.
- the electronics assembly 120 may be electrically coupled to each of the sensors 102 , 112 , 116 in the pressure transducer 100 (e.g., via electrical feedthrough pins (not shown)) and may be utilized to operate (e.g., drive) one or more of the sensors 102 , 112 , 116 and to receive the output of the sensors 102 , 112 , 116 .
- pressure transducers in accordance with the instant disclosure may include methods of fabrication, orientations, quartz structures, electronics, assemblies, housings, reference sensors, and components similar to the sensors and transducers disclosed in, for example, U.S. Pat. No. 6,131,462 to EerNisse et al., U.S. Pat. No. 5,471,882 to Wiggins, U.S. Pat. No. 5,231,880 to Ward et al., U.S. Pat. No. 4,550,610 to EerNisse et al., and U.S. Pat. No. 3,561,832 to Karrer et al., the disclosure of each of which patents is hereby incorporated herein in its entirety by this reference.
- pressure sensor 102 may comprise a quartz crystal sensing element.
- a pressure transducer having a quartz crystal pressure sensor e.g., such as that described in U.S. Pat. No. 6,131,462 to EerNisse et al.
- the temperature sensor 112 may comprise an electronic temperature sensor (e.g., a silicon temperature sensor using, for example, integrated electronic circuits to monitor temperature rather than a sensor exhibiting temperature-dependent variable mechanical characteristics (e.g., frequency changes of a resonator element) such as a quartz crystal resonator).
- the pressure transducer 100 may include a quartz crystal pressure sensor 102 , a quartz crystal reference sensor 116 , and an electronic temperature sensor 112 as discussed below in greater detail.
- the electronic temperature sensor may utilize electronic circuits to detect temperature as opposed to a mechanical sensor (e.g., a quartz sensor) that monitors one or more mechanical properties of the mechanical sensor (e.g., frequency response of a quartz crystal) to detect temperature.
- a mechanical sensor e.g., a quartz sensor
- the mechanical sensor e.g., a quartz sensor
- the electronic temperature sensor 112 may comprise an integrated circuit (IC) that is utilized, at least in part, to generate a proportional to absolute temperature (PTAT) current (i.e., a PTAT sensor).
- IC integrated circuit
- PTAT proportional to absolute temperature
- such an electronic sensor may provide a temperature sensing range of about 25° C. to 250° C.
- FIG. 2A is a schematic block diagram of an electronic sensor 200 according to an embodiment of the present disclosure.
- the electronic temperature sensor 200 may be an embodiment for the electronic temperature sensor 112 of FIG. 1 or other electronic temperature sensors described herein.
- the electronic temperature sensor 200 includes current generators 210 operably coupled with a relaxation oscillator 220 in order to generate an output signal 240 indicating a temperature.
- the output signal 240 may be used to determine a temperature of an object.
- the current generators 210 may be configured to generate a PTAT current (I PTAT ) and a relatively constant current (I CONST ) that are received by the relaxation oscillator 220 .
- the relaxation oscillator 220 may be configured to generate the output signal 240 responsive to charging and discharging a capacitor (not shown in FIG. 2A ) with a complementary to absolute temperature current (I CTAT ).
- the current generators 210 and the relaxation oscillator 220 will be described more fully below with respect to FIGS. 2B and 2C .
- the electronic temperature sensor 200 may also be referred to herein as a “PTAT sensor” because it generates and uses a PTAT current to contribute to its temperature sensing function. However, it is recognized that the electronic sensor 200 may also generate a constant current that may contribute to its temperature sensing function. Therefore, the term “PTAT sensor” should not be interpreted to be limited to embodiments that only have PTAT current.
- FIG. 2B is a schematic block diagram of the current generators 210 of FIG. 2A .
- the current generators 210 include a first current generator 212 configured to generate I PTAT , and a second current generator 216 configured to generate I CONST .
- the first current generator 212 may include an operational amplifier 214 having a first input (e.g., non-inverting input) coupled to resistor R 1 and transistor Q 1 , and a second input (e.g., inverting input) coupled to transistor Q 2 .
- the second current generator 216 may include an operational amplifier 218 having a first input (e.g., inverting input) coupled to resistor R 2 and transistor Q 3 , and a second input (e.g., non-inverting input) coupled to resistor R 3 .
- first input e.g., inverting input
- second input e.g., non-inverting input
- the first current generator 212 generates I PTAT , which also contributes to the generation of a reference voltage V REF (e.g., bandgap voltage) that is received on the node coupled to the first input of the operational amplifier 218 of the second current generator 216 .
- V REF reference voltage
- the second current generator 216 generates I CONST .
- Transistors M 1 , M 2 , M 3 , and M 4 may assist in the transmission of I PTAT and I CONST to the relaxation oscillator 220 .
- I PTAT and I CONST may be defined as below:
- FIG. 2C is a simplified schematic block diagram of the relaxation oscillator 220 of FIG. 2A .
- the relaxation oscillator 220 may include a comparator 222 that receives a first voltage V CAP and a second voltage V TRIP for comparison and generation of the output signal 240 .
- the output signal 240 may be a digital pulse indicating a temperature, such that the comparator 222 acts as an analog-to-digital converter.
- the relaxation oscillator 220 may further include additional transistors 224 , 226 , 228 that are enabled to control current flow of the relaxation oscillator 220 .
- the relaxation oscillator 220 may include one or more inverters 230 coupled to the output of the comparator 222 that are configured to generate the control signals to the transistors 224 , 226 , 228 .
- the first voltage V CAP is the voltage on the capacitor C that is coupled to an input (e.g., non-inverting input) of the comparator 222 .
- the second voltage V TRIP is a voltage on the resistor R 4 that is coupled to an input (e.g., inverting input) of the comparator 222 .
- V TRIP may act as a trip point for the comparator 222 as will be discussed more fully below.
- the CTAT current (I CTAT ) is the difference between I CONST and I PTAT as subtracted at the node coupled to the capacitor C.
- I CTAT charges and discharges the capacitor C depending on the phase of operation of the relaxation oscillator 220 .
- the phase of operation may be controlled by the outputs of the comparator 222 and the inverter 230 .
- the output of the comparator 222 may be unasserted (e.g., a logic low) and the output of the inverter 230 may be asserted (e.g., a logic high).
- the transistors 224 and 228 may be enabled and the transistor 226 may be disabled.
- the capacitor may be charging (i.e., V CAP may be increasing), with I CTAT sourcing the current of the capacitor C.
- transistor 228 is enabled, the current K*I CONST flows through resistor R 4 .
- the current flowing through resistor R 4 may be (K+M)*I CONST because of contributions from both current paths M*I CONST and K*I CONST . Therefore, V TRIP may have a first level during the first phase:
- V TRIP 1 ( K+M ) I CONST *R 4 (3).
- V TRIP may have a second level during the second phase:
- V TRIP 2 MI CONST *R 4 (4).
- the second level (V TRIP2 ) may be less than the first level (V TRIP1 ) that is responsive to additional current (K*I CONST ) either flowing through resistor R 4 or not flowing through resistor R 4 depending on the phase of the output of the comparator 222 .
- the output signal 240 may have a sufficient peak-to-peak voltage for detection responsive to the charging and discharging of the capacitor C.
- V CAP may either charge or discharge responsive to the I CTAT , which is the difference of I CONST and I CTAT.
- Including a constant current (I CONST ) in that determination may enable increased the sensitivity and control of the offset and the slope control of the electronic temperature sensor 200 by controlling both the resistor R 4 and capacitor C as potentiometers.
- the comparator 222 may operate between at least two trip points that are responsive to the phase of the relaxation oscillator 220 by adding a current (e.g., K*I CONST ) to raise the trip point voltage during one of the phases.
- the output signal 240 may indicate a given temperature.
- the frequency of the output signal 240 may be used to determine the temperature of an object.
- the frequency may be measured and correlated to a temperature, but may also be understood as:
- FIG. 3 is a schematic block diagram of an electronic temperature sensor 300 according to an embodiment of the present disclosure.
- the electronic temperature sensor 300 may be an embodiment for the electronic temperature sensor 112 of FIG. 1 or other electronic temperature sensors described herein.
- the electronic temperature sensor 300 may include the current generators 210 and the relaxation oscillator 220 that are configured to operate generally as described above.
- the electronic sensor 300 of FIG. 3 further includes an example of a configuration that includes transistors M 5 -M 19 that perform the current source, sink, and mirroring functions that are described above in a more simplified form. It is contemplated that the current source, sink, and mirroring functions may be implemented by various configurations, and that the example shown herein is presented as an example of such an implementation of embodiments of the present disclosure.
- transistors M 8 , M 10 , M 14 , and M 15 may perform the functionality described in FIG. 2C with respect to transistors 224 , 226 .
- the output of the comparator 222 may be coupled to one or more inverters 230 , 232 .
- a first inverter 230 and a second inverter 232 are coupled to the output of the comparator 222 .
- the output of the comparator 222 may enable transistors M 8 and M 15 , while transistors M 10 and M 14 are disabled.
- transistor M 6 is enabled causing additional current to flow through resistor R 4 and V TRIP to have a relatively higher trip point.
- the output of the first transistor 230 may enable transistors M 10 and M 14 , while transistors M 8 and M 15 are disabled.
- I CTAT decreases.
- I CTAT increases. The temperature may be detected as indicated by the output signal 240 .
- FIG. 4 is a partial cross-sectional view of pressure transducer 400 including an electronic temperature sensor 412 .
- the pressure transducer 400 may be the same or somewhat similar to and may include one or more features of the pressure transducer 100 discussed above with regard to FIG. 1 .
- the pressure transducer 400 may include a pressure housing 402 having a quartz crystal pressure sensor 104 disposed therein and the electronic temperature sensor 412 and a quartz crystal reference sensor 116 .
- An electronics housing 418 of the pressure transducer 400 may be coupled to the pressure housing 402 and include the electronics assembly 120 for operating the sensors 104 , 412 , 116 .
- the electronic temperature sensor 412 may comprise a silicon temperature chip (e.g., a PTAT sensor) and may be disposed in an electronic temperature sensor assembly 422 .
- the electronic temperature sensor assembly 422 may comprise the electronic temperature sensor 412 disposed in a transistor outline (TO) package 424 .
- FIGS. 5 , 6 , and 7 show a side perspective view of the electronic temperature sensor assembly 422 , a side perspective view of the electronic temperature sensor assembly 422 with a cover 426 of the transistor outline package 424 removed, and another side perspective view of the electronic temperature sensor assembly 422 , respectively. Referring to FIGS.
- the electronic temperature sensor assembly 422 includes the electronic temperature sensor 412 housed within the transistor outline package 424 .
- the electronic temperature sensor 412 is coupled to a base portion 428 of the transistor outline package 424 and positioned between the base portion 428 and the cover 426 , which extends around a majority of the base portion 428 and the electronic temperature sensor 412 .
- the electronic temperature sensor 412 is electrically connected to one or more feedthrough pins 430 (e.g., via one or more bond wires 432 ) that may be electrically coupled to the electronics assembly 120 ( FIG. 4 ) to provide electrical communication between the electronic temperature sensor 412 and the electronics assembly 120 .
- the electronic temperature sensor 412 may be positioned in the pressure feedthrough portion 414 of the pressure transducer 400 proximate the pressure housing 402 and the pressure sensor 104 and adjacent the bulkhead 415 .
- the electronic temperature sensor assembly 422 may be positioned between the pressure sensor 104 and the reference sensor 116 (e.g., between the reference sensor 116 and the bulkhead 415 separating the pressure sensor 102 from the reference sensor 116 and the temperature sensor 412 ).
- the electronic temperature sensor assembly 422 may be at least partially embedded in the bulkhead 415 .
- the electronic temperature sensor assembly 422 and the reference sensor 116 may be positioned longitudinally adjacent to each other (e.g., along a longitudinal axis L 400 of the pressure transducer 400 ). In such an embodiment, the electronic temperature sensor assembly 422 may be positioned relatively closer to the pressure sensor 104 than the reference sensor 116 . Such positioning may enable the temperature sensor 412 to sense temperature substantially similar to the temperature at the pressure sensor 102 . In some embodiments, such positioning may reduce transients experienced by one or more portions of the pressure transducer 400 (e.g., the temperature sensor 412 ) due to temperature gradients within the pressure transducer 400 .
- the electronic temperature sensor assembly 422 and the reference sensor 116 may be positioned laterally adjacent to each other (e.g., in a direction transverse to the longitudinal axis L 400 of the pressure transducer 400 ).
- the reference sensor 116 may also be housed in a transistor outline package 434 .
- the transistor outline package 424 of the electronic temperature sensor assembly 422 may be relatively smaller in size than (e.g., having a smaller volume than) the transistor outline package 434 of the quartz crystal reference sensor 116 .
- FIG. 8 is a partial cross-sectional view of pressure transducer 500 including an electronic temperature sensor 512 .
- the pressure transducer 500 may be the same or somewhat similar to and may include one or more features of the pressure transducers 100 , 400 discussed above with regard to FIGS. 1 and 4 through 7 .
- the pressure transducer 500 may include a pressure housing 502 having a quartz crystal pressure sensor 104 disposed therein and the electronic temperature sensor 512 and a quartz crystal reference sensor 116 .
- An electronics housing 518 of the pressure transducer 500 may be coupled to the pressure housing 502 and include the electronics assembly 520 for operating the sensors 104 , 512 , 116 .
- the electronic temperature sensor 512 may comprise a silicon temperature chip (e.g., a PTAT sensor) and may be positioned in the electronics housing 518 of the pressure transducer 500 .
- the electronic temperature sensor 512 may be positioned at (e.g., on or integrated with) the electronics assembly 520 in the electronics housing 518 of the pressure transducer 500 .
- the electronic temperature sensor 512 may be coupled (e.g., electrically and mechanically coupled) to an application specific integrated circuit (ASIC) of the electronics assembly 520 that also operates and monitors the quartz crystal pressure sensor 104 and the quartz crystal reference sensor 116 .
- ASIC application specific integrated circuit
- the electronic temperature sensor 512 may be positioned on the ASIC of the electronics assembly 520 , which assembly 520 also performs one or more of the functions of driving the quartz crystal pressure sensor 104 and the quartz crystal reference sensor 116 at one or more selected frequencies, receiving the output (e.g., frequency output) form the quartz crystal pressure sensor 104 and the quartz crystal reference sensor 116 , monitoring the output (e.g., frequency output) of the electronic temperature sensor 512 , and powering the electronic temperature sensor 512 .
- the output e.g., frequency output
- the reference sensor 116 may be positioned between the electronic temperature sensor 512 and the pressure sensor 104 (e.g., in a direction along a longitudinal axis L 500 of the pressure transducer 500 ). Stated in other way, the electronic temperature sensor 512 may be positioned on a first end portion of the pressure transducer 500 in the electronics housing 518 . The pressure sensor 104 may be positioned on a second end portion of the pressure transducer 500 , opposing the first end portion, in the pressure housing 502 . The reference sensor 116 may be positioned between the electronic temperature sensor 512 in the electronics housing 518 and the pressure sensor 104 in the pressure housing 502 (e.g., in the pressure housing 502 separated from the pressure sensor 104 by the bulkhead 515 .
- FIG. 9 is a partial cross-sectional view of pressure transducer 600 including an electronic temperature sensor 612 .
- the pressure transducer 600 may be the same or somewhat similar to and may include one or more features of the pressure transducers 100 , 400 , 500 discussed above with regard to FIGS. 1 and 4 through 8 .
- the pressure transducer 600 may include a pressure housing 602 having a quartz crystal pressure sensor 104 disposed therein and the electronic temperature sensor 612 and a quartz crystal reference sensor 116 .
- An electronics housing 618 of the pressure transducer 600 may be coupled to the pressure housing 602 and include the electronics assembly 120 for operating the sensors 104 , 612 , 116 .
- the electronic temperature sensor 612 (e.g., a silicon temperature chip such as a PTAT sensor) may be positioned in the pressure housing 602 of the pressure transducer 600 between the pressure sensor 104 and the reference sensor 116 (e.g., in a direction along a longitudinal axis L 600 of the pressure transducer 600 ).
- the electronic temperature sensor 612 may be positioned proximate the pressure sensor 102 in the pressure housing 602 on the same side of bulkhead 615 as the pressure sensor 102 .
- the electronic temperature sensor 612 may be positioned within a chamber 606 in the pressure housing 602 in which the pressure sensor 102 and the fluid for communication of one or more of pressure and temperature from an exterior environment is disposed.
- the electronic temperature sensor 612 disposed directly in (e.g., in direct thermal communication with) a working fluid of the pressure transducer 600 rather than being isolated from the working fluid as discussed above.
- the electronic temperature sensor 612 may be coupled to a first side of the bulkhead 615 adjacent the pressure sensor 102 and may be electrically coupled to one or more feedthrough pins 624 that electrically couple the electronic temperature sensor 612 to the electronics assembly 120 .
- the reference sensor 116 may be positioned on a second side of the bulkhead 615 opposing the first side (e.g., proximate the electronics housing 618 ).
- the electronic temperature sensor 612 may be placed in direct communication (e.g., fluid communication) with the working fluid of the pressure transducer 600 enabling the electronic temperature sensor 612 to directly measure the temperature of the working fluid (which temperature is transmitted to the working fluid by the environment exterior to the pressure transducer 600 ). Such positioning may enable the temperature sensor 612 to sense temperature substantially similar to the temperature at the pressure sensor 102 . In some embodiments, such positioning may reduce transients experienced by one or more portions of the pressure transducer 600 (e.g., the temperature sensor 612 ) due to temperature gradients within the pressure transducer 600 .
- the electronic temperature sensor 612 may be positioned within an opening formed in spacer 626 (e.g., a dielectric spacer that at least partially isolates the pressure sensor 102 from the bulkhead 615 ) positioned on the same side of the bulkhead 615 as the pressure sensor 102 .
- spacer 626 e.g., a dielectric spacer that at least partially isolates the pressure sensor 102 from the bulkhead 615
- Embodiments of the present disclosure may be particularly useful in providing electronic temperature sensors having a robust applicability in many different applications.
- such electronic temperature sensors when implemented in a pressure transducer for downhole pressure-sensing applications, may provide additional flexibility in positioning the electronic temperature sensor within the pressure transducer and may improve the reliability, sensitivity, and ease of maintenance and replacement as compared to pressure transducers having a quartz crystal temperature sensor.
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Abstract
Description
- Embodiments of the present disclosure relate to sensors for measurement of temperature and, more particularly, to electronic temperature sensors for measurement of temperature for use in, for example, downhole assemblies including one or more quartz resonator sensors and to related assemblies and methods thereof.
- Thickness shear mode quartz resonator sensors have been used successfully in the downhole environment of oil and gas wells for several decades and are still an accurate means of determining bottom-hole pressure. Quartz resonator pressure sensors typically have a crystal resonator located inside a housing exposed to ambient bottom-hole fluid pressure and temperature. Electrodes on the resonator element coupled to a high frequency power source drive the resonator and result in shear deformation of the crystal resonator. The electrodes also detect the resonator response to pressure and temperature and are electrically coupled to conductors extending to associated power and processing electronics isolated from the ambient environment. Ambient pressure and temperature are transmitted to the resonator, via a substantially incompressible fluid within the housing, and changes in the resonator frequency response are sensed and used to determine the pressure and/or temperature and interpret changes in same. For example, a quartz resonator sensor, as disclosed in U.S. Pat. Nos. 3,561,832 and 3,617,780, includes a cylindrical design with the resonator formed in a unitary fashion in a single piece of quartz. End caps of quartz are attached to close the structure.
- Generally, a thickness shear mode quartz resonator sensor assembly may include a first sensor in the form of a primarily pressure sensitive thickness shear mode quartz crystal resonator exposed to ambient pressure and temperature, a second sensor in the form of a temperature sensitive quartz crystal resonator exposed only to ambient temperature, a third reference crystal in the form of quartz crystal resonator exposed only to ambient temperature, and supporting electronics. The first sensor changes frequency in response to changes in applied external pressure and temperature with a major response component being related to pressure changes, while the output frequency of the second sensor is used to temperature compensate temperature-induced frequency excursions in the first sensor. The reference crystal, if used, generates a reference signal, which is only slightly temperature-dependent, against or relative to which the pressure- and temperature-induced frequency changes in the first sensor and the temperature-induced frequency changes in the second sensor can be compared. Such comparison may be achieved by, for example, frequency mixing frequency signals and using the reference frequency to count the signals from the first and second sensors for frequency measurement.
- Prior art devices of the type referenced above including one or more thickness shear mode quartz resonator sensors exhibit a high degree of accuracy even when implemented in an environment such as a downhole environment exhibiting high pressures and temperatures. However, each of the quartz resonator sensors that are included in a pressure transducer may be relatively expensive to fabricate, as each quartz resonator sensor must be individually manufactured. Further, the overall size and positioning requirements of the multiple quartz resonator sensors in a pressure transducer may limit the size, shape, and configuration of the assembly.
- In some embodiments, the present disclosure includes a quartz resonator pressure transducer for use in a subterranean borehole. The quartz resonator pressure transducer includes a pressure housing comprising at least one chamber, an electronics housing comprising an electronics assembly, and a quartz pressure sensor in communication with the at least one chamber and for measuring pressure of a fluid disposed within the at least one chamber. The electronics assembly is configured to drive the quartz pressure sensor at a selected frequency and to sense a pressure-related frequency response from the quartz pressure sensor. The quartz resonator pressure transducer further includes an electronic temperature sensor electrically coupled to the electronics assembly and configured to output a temperature signal to the electronics assembly.
- In additional embodiments, the present disclosure includes a temperature sensor. The temperature sensor includes a constant current generator configured to generate a constant current (ICONST), a proportional to absolute temperature (PTAT) current generator configured to generate a PTAT current, and a relaxation oscillator operably coupled to the constant current generator and the PTAT current generator. The relaxation oscillator is configured to charge and discharge a capacitor responsive to a complementary to absolute temperature current comprising a difference between the constant current and the PTAT current.
- In yet additional embodiments, the present disclosure includes a pressure transducer that may include a temperature sensor as described above.
- In yet additional embodiments, the present disclosure includes a method of monitoring pressure in a subterranean borehole. The method includes resonating a quartz pressure sensor at at least one frequency with an electronics assembly of a pressure transducer under an applied fluid pressure, monitoring a frequency output of the quartz pressure sensor with the electronics assembly, resonating a quartz reference sensor at at least one frequency with the electronics assembly, monitoring a frequency output of the quartz reference sensor with the electronics assembly, powering an electronic temperature sensor with the electronics assembly, and monitoring a frequency output of the electronic temperature sensor with the electronics assembly.
- While the specification concludes with claims particularly pointing out and distinctly claiming what are regarded as embodiments of the present disclosure, various features and advantages of embodiments of the disclosure may be more readily ascertained from the following description of example embodiments of the disclosure provided with reference to the accompanying drawings, in which:
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FIG. 1 is a partial cross-sectional view of pressure transducer including an electronic temperature sensor in accordance with an embodiment of the present disclosure; -
FIG. 2A is a schematic block diagram of an electronic sensor according to an embodiment of the present disclosure. -
FIG. 2B is a schematic block diagram of the current generators ofFIG. 2A . -
FIG. 2C is a simplified schematic block diagram of the relaxation oscillator ofFIG. 2A . -
FIG. 3 is a schematic block diagram of an electronic sensor according to an embodiment of the present disclosure. -
FIG. 4 is a partial cross-sectional view of pressure transducer including an electronic temperature sensor in accordance with another embodiment of the present disclosure; -
FIG. 5 is a side perspective view of an electrical temperature sensor package for use in, for example, the pressure transducer shown inFIG. 4 ; -
FIG. 6 is a side perspective view of the electrical temperature sensor package shown inFIG. 5 with the cover removed; -
FIG. 7 is another side perspective view of the electrical temperature sensor package shown inFIG. 5 ; -
FIG. 8 is a partial cross-sectional view of pressure transducer including an electronic temperature sensor in accordance with yet another embodiment of the present disclosure; and -
FIG. 9 is a partial cross-sectional view of pressure transducer including an electronic temperature sensor in accordance with yet another embodiment of the present disclosure. - In the following detailed description, reference is made to the accompanying drawings that depict, by way of illustration, specific embodiments in which the disclosure may be practiced. However, other embodiments may be utilized, and structural, logical, and configurational changes may be made without departing from the scope of the disclosure. The illustrations presented herein are not meant to be actual views of any particular sensor or component thereof, but are merely idealized representations that are employed to describe embodiments of the present disclosure. The drawings presented herein are not necessarily drawn to scale. Additionally, elements common between drawings may retain the same numerical designation.
- Although some embodiments of electronic temperature sensors of the present disclosure are depicted as being used and employed in quartz resonator sensor assemblies, persons of ordinary skill in the art will understand that the embodiments of the present disclosure may be employed in any application where electronic measurement of temperature is desirable (e.g., in a downhole assembly or otherwise).
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FIG. 1 is a perspective view of apressure transducer 100 including an electronic temperature sensor. As shown inFIG. 1 , thepressure transducer 100 may include apressure housing 102 having apressure sensor 104 disposed in achamber 106 in thepressure housing 102. Thechamber 106 in thepressure housing 102 may be in communication with an environment exterior to thepressure transducer 100 in order to determine one or more environmental conditions in the exterior environments (e.g., a pressure and/or temperature of the exterior environment). For example, thechamber 106 may be in fluid communication with an isolation element 108 (e.g., a diaphragm assembly, a bladder assembly, a bellows assembly, and combinations thereof). Theisolation element 108 may act to transmit pressure and/or temperature exterior to thepressure transducer 100 to sensors within the pressure transducer 100 (e.g., via a fluid within the pressure transducer). Thechamber 106 in thepressure housing 102 may be in fluid communication with isolation element 108 (e.g., via channel 110). Fluid may be disposed in thechamber 106 around thepressure sensor 104, in thechannel 110, and in theisolation element 108 to transmit the pressure and/or temperature from the exterior of thepressure transducer 100. In some embodiments, the fluid withinpressure transducer 100 may comprise a highly incompressible, low thermal expansion fluid such as, for example, oil (e.g., a Paratherm or sebacate oil). The pressure and thermal expansion of the fluid may be sensed by the pressure sensor 104 (e.g., a quartz crystal sensing element). - As further depicted in
FIG. 1 , thepressure transducer 100 may include one or more additional sensors that are utilized along with thepressure sensor 102 to determine environmental conditions. Thepressure transducer 100 may include atemperature sensor 112 that is at least partially isolated from (e.g., by apressure feedthrough portion 114 that includes bulkhead 115) from the fluid within thepressure housing 102 that is in communication with the exterior environment. Thetemperature sensor 112 is utilized to sense the temperature of the exterior environment (e.g., as is it transmitted totemperature sensor 112 through the housing of the pressure transducer 100). - In some embodiments, the
pressure transducer 100 may include areference sensor 116 that is at least partially isolated from (e.g., by the pressure bulkhead 114) from the fluid within thepressure housing 102 that is in communication with the exterior environment. As known in the art,such references sensors 116 may be utilized for comparison with other sensors (e.g., thepressure sensor 102, thetemperature sensor 112, or combinations thereof). - An
electronics housing 118 is coupled to thepressure housing 102. As depicted, theelectronics housing 118 include anelectronics assembly 120 that is at least partially isolated from the fluid within thepressure housing 102 that is in communication with the exterior environment. Theelectronics assembly 120 may be electrically coupled to each of thesensors sensors sensors - In some embodiments, pressure transducers in accordance with the instant disclosure may include methods of fabrication, orientations, quartz structures, electronics, assemblies, housings, reference sensors, and components similar to the sensors and transducers disclosed in, for example, U.S. Pat. No. 6,131,462 to EerNisse et al., U.S. Pat. No. 5,471,882 to Wiggins, U.S. Pat. No. 5,231,880 to Ward et al., U.S. Pat. No. 4,550,610 to EerNisse et al., and U.S. Pat. No. 3,561,832 to Karrer et al., the disclosure of each of which patents is hereby incorporated herein in its entirety by this reference.
- As mentioned above,
pressure sensor 102 may comprise a quartz crystal sensing element. Conventionally, a pressure transducer having a quartz crystal pressure sensor (e.g., such as that described in U.S. Pat. No. 6,131,462 to EerNisse et al.) will also include a quartz crystal reference sensor and a quartz crystal temperature sensor that are utilized in comparing the outputs of the crystal sensors (e.g., via frequency mixing and/or using the reference frequency to count the signals from the other two crystals). However, in embodiments of the instant disclosure, thetemperature sensor 112 may comprise an electronic temperature sensor (e.g., a silicon temperature sensor using, for example, integrated electronic circuits to monitor temperature rather than a sensor exhibiting temperature-dependent variable mechanical characteristics (e.g., frequency changes of a resonator element) such as a quartz crystal resonator). For example, thepressure transducer 100 may include a quartzcrystal pressure sensor 102, a quartzcrystal reference sensor 116, and anelectronic temperature sensor 112 as discussed below in greater detail. As mentioned above, the electronic temperature sensor may utilize electronic circuits to detect temperature as opposed to a mechanical sensor (e.g., a quartz sensor) that monitors one or more mechanical properties of the mechanical sensor (e.g., frequency response of a quartz crystal) to detect temperature. - In some embodiments, the
electronic temperature sensor 112 may comprise an integrated circuit (IC) that is utilized, at least in part, to generate a proportional to absolute temperature (PTAT) current (i.e., a PTAT sensor). In some embodiments, such an electronic sensor may provide a temperature sensing range of about 25° C. to 250° C. -
FIG. 2A is a schematic block diagram of anelectronic sensor 200 according to an embodiment of the present disclosure. Theelectronic temperature sensor 200 may be an embodiment for theelectronic temperature sensor 112 ofFIG. 1 or other electronic temperature sensors described herein. - The
electronic temperature sensor 200 includescurrent generators 210 operably coupled with arelaxation oscillator 220 in order to generate anoutput signal 240 indicating a temperature. In other words, theoutput signal 240 may be used to determine a temperature of an object. Thecurrent generators 210 may be configured to generate a PTAT current (IPTAT) and a relatively constant current (ICONST) that are received by therelaxation oscillator 220. Therelaxation oscillator 220 may be configured to generate theoutput signal 240 responsive to charging and discharging a capacitor (not shown inFIG. 2A ) with a complementary to absolute temperature current (ICTAT). Thecurrent generators 210 and therelaxation oscillator 220 will be described more fully below with respect toFIGS. 2B and 2C . Theelectronic temperature sensor 200 may also be referred to herein as a “PTAT sensor” because it generates and uses a PTAT current to contribute to its temperature sensing function. However, it is recognized that theelectronic sensor 200 may also generate a constant current that may contribute to its temperature sensing function. Therefore, the term “PTAT sensor” should not be interpreted to be limited to embodiments that only have PTAT current. -
FIG. 2B is a schematic block diagram of thecurrent generators 210 ofFIG. 2A . Thecurrent generators 210 include a firstcurrent generator 212 configured to generate IPTAT, and a secondcurrent generator 216 configured to generate ICONST. The firstcurrent generator 212 may include anoperational amplifier 214 having a first input (e.g., non-inverting input) coupled to resistor R1 and transistor Q1, and a second input (e.g., inverting input) coupled to transistor Q2. The secondcurrent generator 216 may include anoperational amplifier 218 having a first input (e.g., inverting input) coupled to resistor R2 and transistor Q3, and a second input (e.g., non-inverting input) coupled to resistor R3. - In operation, the first
current generator 212 generates IPTAT, which also contributes to the generation of a reference voltage VREF (e.g., bandgap voltage) that is received on the node coupled to the first input of theoperational amplifier 218 of the secondcurrent generator 216. The secondcurrent generator 216 generates ICONST. Transistors M1, M2, M3, and M4 may assist in the transmission of IPTAT and ICONST to therelaxation oscillator 220. - The values for IPTAT and ICONST may be defined as below:
-
-
FIG. 2C is a simplified schematic block diagram of therelaxation oscillator 220 ofFIG. 2A . Therelaxation oscillator 220 may include acomparator 222 that receives a first voltage VCAP and a second voltage VTRIP for comparison and generation of theoutput signal 240. Theoutput signal 240 may be a digital pulse indicating a temperature, such that thecomparator 222 acts as an analog-to-digital converter. Therelaxation oscillator 220 may further includeadditional transistors relaxation oscillator 220. In addition, therelaxation oscillator 220 may include one ormore inverters 230 coupled to the output of thecomparator 222 that are configured to generate the control signals to thetransistors - The first voltage VCAP is the voltage on the capacitor C that is coupled to an input (e.g., non-inverting input) of the
comparator 222. The second voltage VTRIP is a voltage on the resistor R4 that is coupled to an input (e.g., inverting input) of thecomparator 222. VTRIP may act as a trip point for thecomparator 222 as will be discussed more fully below. - The CTAT current (ICTAT) is the difference between ICONST and IPTAT as subtracted at the node coupled to the capacitor C. As a result, ICTAT charges and discharges the capacitor C depending on the phase of operation of the
relaxation oscillator 220. The phase of operation may be controlled by the outputs of thecomparator 222 and theinverter 230. - During a first phase, the output of the
comparator 222 may be unasserted (e.g., a logic low) and the output of theinverter 230 may be asserted (e.g., a logic high). As a result, thetransistors transistor 226 may be disabled. At the node of the capacitor C, the capacitor may be charging (i.e., VCAP may be increasing), with ICTAT sourcing the current of the capacitor C. Becausetransistor 228 is enabled, the current K*ICONST flows through resistor R4. Thus, the current flowing through resistor R4 may be (K+M)*ICONST because of contributions from both current paths M*ICONST and K*ICONST. Therefore, VTRIP may have a first level during the first phase: -
V TRIP 1=(K+M)I CONST *R 4 (3). - As VCAP increases and rises above VTRIP1, the output of the
comparator 222 switches, and the capacitor begins discharging. During this second phase of thecomparator 222, the output of thecomparator 222 may be asserted (e.g., a logic high) and the output of theinverter 230 may be unasserted (e.g., a logic low). As a result, thetransistors transistor 226 may be enabled. At the node of the capacitor C, the capacitor may be discharging (i.e., VCAP may be decreasing), with ICTAT sinking the current of the capacitor C. In addition, becausetransistor 228 is disabled, the current K*ICONST may not flow through resistor R4. Thus, the current flowing through resistor R4 may be M*ICONST because the only contribution may come from the current paths M*ICONST. Therefore, VTRIP may have a second level during the second phase: -
V TRIP 2 =MI CONST *R 4 (4). - Thus, the second level (VTRIP2) may be less than the first level (VTRIP1) that is responsive to additional current (K*ICONST) either flowing through resistor R4 or not flowing through resistor R4 depending on the phase of the output of the
comparator 222. As a result, theoutput signal 240 may have a sufficient peak-to-peak voltage for detection responsive to the charging and discharging of the capacitor C. - In summary, VCAP may either charge or discharge responsive to the ICTAT, which is the difference of ICONST and ICTAT. Including a constant current (ICONST) in that determination may enable increased the sensitivity and control of the offset and the slope control of the
electronic temperature sensor 200 by controlling both the resistor R4 and capacitor C as potentiometers. In addition, thecomparator 222 may operate between at least two trip points that are responsive to the phase of therelaxation oscillator 220 by adding a current (e.g., K*ICONST) to raise the trip point voltage during one of the phases. - As a result, the
output signal 240 may indicate a given temperature. For example, the frequency of theoutput signal 240 may be used to determine the temperature of an object. The frequency may be measured and correlated to a temperature, but may also be understood as: -
-
FIG. 3 is a schematic block diagram of anelectronic temperature sensor 300 according to an embodiment of the present disclosure. Theelectronic temperature sensor 300 may be an embodiment for theelectronic temperature sensor 112 ofFIG. 1 or other electronic temperature sensors described herein. Theelectronic temperature sensor 300 may include thecurrent generators 210 and therelaxation oscillator 220 that are configured to operate generally as described above. Theelectronic sensor 300 ofFIG. 3 further includes an example of a configuration that includes transistors M5-M19 that perform the current source, sink, and mirroring functions that are described above in a more simplified form. It is contemplated that the current source, sink, and mirroring functions may be implemented by various configurations, and that the example shown herein is presented as an example of such an implementation of embodiments of the present disclosure. - As shown in
FIG. 3 , transistors M8, M10, M14, and M15 may perform the functionality described inFIG. 2C with respect totransistors comparator 222 may be coupled to one ormore inverters FIG. 3 , afirst inverter 230 and asecond inverter 232 are coupled to the output of thecomparator 222. During a first phase, the output of thecomparator 222 may enable transistors M8 and M15, while transistors M10 and M14 are disabled. As a result, ICONST sources current from transistor M11 and IPTAT sinks current from transistor M17 causing the net difference between the two currents to charge the capacitor C. In addition, transistor M6 is enabled causing additional current to flow through resistor R4 and VTRIP to have a relatively higher trip point. During the second phase, the output of thefirst transistor 230 may enable transistors M10 and M14, while transistors M8 and M15 are disabled. As a result, IPTAT sources current from transistor M11, and ICONST sinking current from transistor M17 causing the net difference between the two currents to discharge the capacitor C. In other words, during the two phases the currents IPTAT and ICONST switch positions. As temperature increases, ICTAT decreases. As temperature decreases, ICTAT increases. The temperature may be detected as indicated by theoutput signal 240. -
FIG. 4 is a partial cross-sectional view ofpressure transducer 400 including anelectronic temperature sensor 412. Thepressure transducer 400 may be the same or somewhat similar to and may include one or more features of thepressure transducer 100 discussed above with regard toFIG. 1 . As shown inFIG. 4 , thepressure transducer 400 may include apressure housing 402 having a quartzcrystal pressure sensor 104 disposed therein and theelectronic temperature sensor 412 and a quartzcrystal reference sensor 116. An electronics housing 418 of thepressure transducer 400 may be coupled to thepressure housing 402 and include theelectronics assembly 120 for operating thesensors - As depicted in
FIG. 4 , theelectronic temperature sensor 412 may comprise a silicon temperature chip (e.g., a PTAT sensor) and may be disposed in an electronictemperature sensor assembly 422. For example, the electronictemperature sensor assembly 422 may comprise theelectronic temperature sensor 412 disposed in a transistor outline (TO)package 424.FIGS. 5 , 6, and 7, show a side perspective view of the electronictemperature sensor assembly 422, a side perspective view of the electronictemperature sensor assembly 422 with acover 426 of thetransistor outline package 424 removed, and another side perspective view of the electronictemperature sensor assembly 422, respectively. Referring toFIGS. 5 , 6, and 7, the electronictemperature sensor assembly 422 includes theelectronic temperature sensor 412 housed within thetransistor outline package 424. For example, theelectronic temperature sensor 412 is coupled to abase portion 428 of thetransistor outline package 424 and positioned between thebase portion 428 and thecover 426, which extends around a majority of thebase portion 428 and theelectronic temperature sensor 412. - The
electronic temperature sensor 412 is electrically connected to one or more feedthrough pins 430 (e.g., via one or more bond wires 432) that may be electrically coupled to the electronics assembly 120 (FIG. 4 ) to provide electrical communication between theelectronic temperature sensor 412 and theelectronics assembly 120. - Referring back to
FIG. 4 , the electronic temperature sensor 412 (e.g., the electronictemperature sensor assembly 422 including theelectronic temperature sensor 412 in the transistor outline package 424) may be positioned in thepressure feedthrough portion 414 of thepressure transducer 400 proximate thepressure housing 402 and thepressure sensor 104 and adjacent thebulkhead 415. For example, the electronictemperature sensor assembly 422 may be positioned between thepressure sensor 104 and the reference sensor 116 (e.g., between thereference sensor 116 and thebulkhead 415 separating thepressure sensor 102 from thereference sensor 116 and the temperature sensor 412). In some embodiments, the electronictemperature sensor assembly 422 may be at least partially embedded in thebulkhead 415. - In some embodiments, the electronic
temperature sensor assembly 422 and thereference sensor 116 may be positioned longitudinally adjacent to each other (e.g., along a longitudinal axis L400 of the pressure transducer 400). In such an embodiment, the electronictemperature sensor assembly 422 may be positioned relatively closer to thepressure sensor 104 than thereference sensor 116. Such positioning may enable thetemperature sensor 412 to sense temperature substantially similar to the temperature at thepressure sensor 102. In some embodiments, such positioning may reduce transients experienced by one or more portions of the pressure transducer 400 (e.g., the temperature sensor 412) due to temperature gradients within thepressure transducer 400. - In other embodiments, such as that shown in
FIG. 1 , the electronictemperature sensor assembly 422 and thereference sensor 116 may be positioned laterally adjacent to each other (e.g., in a direction transverse to the longitudinal axis L400 of the pressure transducer 400). - In some embodiments, the
reference sensor 116 may also be housed in atransistor outline package 434. In such an embodiment, thetransistor outline package 424 of the electronictemperature sensor assembly 422 may be relatively smaller in size than (e.g., having a smaller volume than) thetransistor outline package 434 of the quartzcrystal reference sensor 116. -
FIG. 8 is a partial cross-sectional view ofpressure transducer 500 including anelectronic temperature sensor 512. Thepressure transducer 500 may be the same or somewhat similar to and may include one or more features of thepressure transducers FIGS. 1 and 4 through 7. As shown inFIG. 8 , thepressure transducer 500 may include apressure housing 502 having a quartzcrystal pressure sensor 104 disposed therein and theelectronic temperature sensor 512 and a quartzcrystal reference sensor 116. An electronics housing 518 of thepressure transducer 500 may be coupled to thepressure housing 502 and include theelectronics assembly 520 for operating thesensors - As depicted in
FIG. 8 , theelectronic temperature sensor 512 may comprise a silicon temperature chip (e.g., a PTAT sensor) and may be positioned in the electronics housing 518 of thepressure transducer 500. For example, theelectronic temperature sensor 512 may be positioned at (e.g., on or integrated with) theelectronics assembly 520 in the electronics housing 518 of thepressure transducer 500. In some embodiments, theelectronic temperature sensor 512 may be coupled (e.g., electrically and mechanically coupled) to an application specific integrated circuit (ASIC) of theelectronics assembly 520 that also operates and monitors the quartzcrystal pressure sensor 104 and the quartzcrystal reference sensor 116. In other words, theelectronic temperature sensor 512 may be positioned on the ASIC of theelectronics assembly 520, whichassembly 520 also performs one or more of the functions of driving the quartzcrystal pressure sensor 104 and the quartzcrystal reference sensor 116 at one or more selected frequencies, receiving the output (e.g., frequency output) form the quartzcrystal pressure sensor 104 and the quartzcrystal reference sensor 116, monitoring the output (e.g., frequency output) of theelectronic temperature sensor 512, and powering theelectronic temperature sensor 512. - The
reference sensor 116 may be positioned between theelectronic temperature sensor 512 and the pressure sensor 104 (e.g., in a direction along a longitudinal axis L500 of the pressure transducer 500). Stated in other way, theelectronic temperature sensor 512 may be positioned on a first end portion of thepressure transducer 500 in theelectronics housing 518. Thepressure sensor 104 may be positioned on a second end portion of thepressure transducer 500, opposing the first end portion, in thepressure housing 502. Thereference sensor 116 may be positioned between theelectronic temperature sensor 512 in theelectronics housing 518 and thepressure sensor 104 in the pressure housing 502 (e.g., in thepressure housing 502 separated from thepressure sensor 104 by thebulkhead 515. -
FIG. 9 is a partial cross-sectional view ofpressure transducer 600 including anelectronic temperature sensor 612. Thepressure transducer 600 may be the same or somewhat similar to and may include one or more features of thepressure transducers FIGS. 1 and 4 through 8. As shown inFIG. 9 , thepressure transducer 600 may include apressure housing 602 having a quartzcrystal pressure sensor 104 disposed therein and theelectronic temperature sensor 612 and a quartzcrystal reference sensor 116. An electronics housing 618 of thepressure transducer 600 may be coupled to thepressure housing 602 and include theelectronics assembly 120 for operating thesensors - As depicted in
FIG. 9 , the electronic temperature sensor 612 (e.g., a silicon temperature chip such as a PTAT sensor) may be positioned in thepressure housing 602 of thepressure transducer 600 between thepressure sensor 104 and the reference sensor 116 (e.g., in a direction along a longitudinal axis L600 of the pressure transducer 600). For example, theelectronic temperature sensor 612 may be positioned proximate thepressure sensor 102 in thepressure housing 602 on the same side ofbulkhead 615 as thepressure sensor 102. Theelectronic temperature sensor 612 may be positioned within achamber 606 in thepressure housing 602 in which thepressure sensor 102 and the fluid for communication of one or more of pressure and temperature from an exterior environment is disposed. Stated in other way, theelectronic temperature sensor 612 disposed directly in (e.g., in direct thermal communication with) a working fluid of thepressure transducer 600 rather than being isolated from the working fluid as discussed above. For example, theelectronic temperature sensor 612 may be coupled to a first side of thebulkhead 615 adjacent thepressure sensor 102 and may be electrically coupled to one or more feedthrough pins 624 that electrically couple theelectronic temperature sensor 612 to theelectronics assembly 120. Thereference sensor 116 may be positioned on a second side of thebulkhead 615 opposing the first side (e.g., proximate the electronics housing 618). In such an embodiment, theelectronic temperature sensor 612 may be placed in direct communication (e.g., fluid communication) with the working fluid of thepressure transducer 600 enabling theelectronic temperature sensor 612 to directly measure the temperature of the working fluid (which temperature is transmitted to the working fluid by the environment exterior to the pressure transducer 600). Such positioning may enable thetemperature sensor 612 to sense temperature substantially similar to the temperature at thepressure sensor 102. In some embodiments, such positioning may reduce transients experienced by one or more portions of the pressure transducer 600 (e.g., the temperature sensor 612) due to temperature gradients within thepressure transducer 600. - In some embodiments, the
electronic temperature sensor 612 may be positioned within an opening formed in spacer 626 (e.g., a dielectric spacer that at least partially isolates thepressure sensor 102 from the bulkhead 615) positioned on the same side of thebulkhead 615 as thepressure sensor 102. - Embodiments of the present disclosure may be particularly useful in providing electronic temperature sensors having a robust applicability in many different applications. For example, such electronic temperature sensors, when implemented in a pressure transducer for downhole pressure-sensing applications, may provide additional flexibility in positioning the electronic temperature sensor within the pressure transducer and may improve the reliability, sensitivity, and ease of maintenance and replacement as compared to pressure transducers having a quartz crystal temperature sensor.
- While the disclosure may be susceptible to various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and have been described in detail herein. However, it should be understood that the disclosure is not intended to be limited to the particular forms disclosed. Rather, the disclosure encompasses all modifications, variations, combinations, and alternatives falling within the scope of the disclosure as defined by the following appended claims and their legal equivalents.
Claims (25)
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