US20140361664A1 - Acoustic wave device - Google Patents
Acoustic wave device Download PDFInfo
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- US20140361664A1 US20140361664A1 US14/275,597 US201414275597A US2014361664A1 US 20140361664 A1 US20140361664 A1 US 20140361664A1 US 201414275597 A US201414275597 A US 201414275597A US 2014361664 A1 US2014361664 A1 US 2014361664A1
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- 239000000758 substrate Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 3
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 329
- 239000010409 thin film Substances 0.000 description 51
- 230000008878 coupling Effects 0.000 description 17
- 238000010168 coupling process Methods 0.000 description 17
- 238000005859 coupling reaction Methods 0.000 description 17
- 238000005530 etching Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000004088 simulation Methods 0.000 description 10
- 229910020177 SiOF Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
Definitions
- a certain aspect of the present invention relates to an acoustic wave device.
- Piezoelectric thin film resonators using a Bulk Acoustic Wave are used for filters and duplexers of wireless devices such as mobile phones.
- the piezoelectric thin film resonator has a structure designed to have a lower electrode and an upper electrode facing each other across a piezoelectric film. A region in which the lower electrode and the upper electrode face each other across the piezoelectric film is a resonance region.
- the piezoelectric film of the piezoelectric thin film resonator generally has a negative temperature coefficient of elastic constant. Therefore, the resonant frequency of the piezoelectric thin film resonator is shifted to a low frequency side as temperature increases. As described above, in an acoustic wave device using the piezoelectric thin film resonator, the resonant frequency, the anti-resonant frequency, and the passband change due to temperature.
- piezoelectric thin film resonators using an insulating film with a temperature coefficient of elastic constant opposite in sign to that of the piezoelectric film as a temperature compensation film as disclosed in Japanese Patent Application Publication Nos. 58-137317, 2013-38471, 2013-34130, and 2013-38658.
- piezoelectric thin film resonators including short-circuited conductive films formed on the upper and lower surfaces of a temperature compensation film and piezoelectric thin film resonators including a temperature compensation film embedded in the lower electrode or the upper electrode as disclosed in Japanese Patent Application Publication No.
- an acoustic wave device including: a piezoelectric film located on a substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film; a temperature compensation film located on a surface, which is opposite to the piezoelectric film, of at least one of the lower electrode and the upper electrode and having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric film; and an additional film located on a surface of the temperature compensation film opposite to the piezoelectric film and having an acoustic impedance greater than an acoustic impedance of the temperature compensation film.
- FIG. 1A is a top view illustrating a piezoelectric thin film resonator in accordance with a first embodiment
- FIG. 1B is a cross-sectional view taken along line A-A in FIG. 1A
- FIG. 1A is a top view illustrating a piezoelectric thin film resonator in accordance with a first embodiment
- FIG. 1B is a cross-sectional view taken along line A-A in FIG. 1A
- FIG. 1B is a cross-sectional view taken along line A-A in FIG. 1A
- FIG. 1C is an enlarged schematic cross-sectional view of a resonance region
- FIG. 2A through FIG. 2D are schematic cross-sectional views (No. 1) illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the first embodiment
- FIG. 3A through FIG. 3C are schematic cross-sectional views (No. 2) illustrating the method of fabricating the piezoelectric thin film resonator in accordance with the first embodiment
- FIG. 4A and FIG. 4B are diagrams illustrating temperature dependence of resonant frequencies and anti-resonant frequencies of the piezoelectric thin film resonators in accordance with a first comparative example and the first embodiment;
- FIG. 5A illustrates simulation results of the Q value of the resonant frequency
- FIG. 5B illustrates simulation results of the Q value of the anti-resonant frequency
- FIG. 5C illustrates simulation results of an electromechanical coupling coefficient
- FIG. 6A illustrates measurement results of the Q value of the resonant frequency
- FIG. 6B illustrates measurement results of the Q value of the anti-resonant frequency
- FIG. 6C illustrates measurement results of the electromechanical coupling coefficient
- FIG. 7A is a top view illustrating a piezoelectric thin film resonator in accordance with a second embodiment
- FIG. 7B is a cross-sectional view taken along line A-A in FIG. 7A
- FIG. 7C is an enlarged schematic cross-sectional view of a resonance region
- FIG. 8A through FIG. 8D are schematic cross-sectional views (No. 1) illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the second embodiment
- FIG. 9A through FIG. 9C are schematic cross-sectional views (No. 2) illustrating the method of fabricating the piezoelectric thin film resonator in accordance with the second embodiment
- FIG. 10A illustrates measurement results of the Q value of the resonant frequency
- FIG. 10B illustrates measurement results of the Q value of the anti-resonant frequency
- FIG. 10C illustrates measurement results of the electromechanical coupling coefficient
- FIG. 11A is a top view illustrating a piezoelectric thin film resonator in accordance with a third embodiment
- FIG. 11B is a cross-sectional view taken along line A-A in FIG. 11A
- FIG. 11C is an enlarged schematic cross-sectional view of a resonance region
- FIG. 12A through FIG. 12D are schematic cross-sectional views (No. 1) illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the third embodiment
- FIG. 13A through FIG. 13D are schematic cross-sectional views (No. 2) illustrating the method of fabricating the piezoelectric thin film resonator in accordance with the third embodiment
- FIG. 14A is a top view illustrating a piezoelectric thin film resonator in accordance with a fourth embodiment, and FIG. 14B is a cross-sectional view taken along line A-A in FIG. 14A ;
- FIG. 15A is a top view illustrating a piezoelectric thin film resonator in accordance with a fifth embodiment
- FIG. 15B is a cross-sectional view taken along line A-A in FIG. 15A ;
- FIG. 16 is a circuit diagram illustrating a ladder-type filter in accordance with a sixth embodiment.
- a first embodiment describes a piezoelectric thin film resonator having an FBAR (Film Bulk Acoustic Resonator) structure employed in an acoustic wave device such as a filter.
- FIG. 1A is a top view illustrating a piezoelectric thin film resonator in accordance with the first embodiment
- FIG. 1B is a cross-sectional view taken along line A-A in FIG. 1A
- FIG. 1C is an enlarged schematic cross-sectional view of a resonance region. As illustrated in FIG. 1A through FIG.
- an additional film 12 is located on a substrate 10 made of, for example, a silicon (Si) substrate so that an air-space 30 having a dome-shaped bulge is formed between the additional film 12 and the upper surface of the substrate 10 .
- the dome-shaped bulge has a shape in which the height of the air-space 30 is low in the periphery of the air-space 30 and the height of the air-space 30 increases at closer distance to the center of the air-space 30 .
- a temperature compensation film 14 is located on the additional film 12 .
- a lower electrode 16 is located on the temperature compensation film 14 .
- the additional film 12 , the temperature compensation film 14 , and the lower electrode 16 have the same shape.
- the additional film 12 has an acoustic impedance greater than that of the temperature compensation film 14 .
- the additional film 12 is, for example, a metal film formed by stacking a chrome (Cr) film and a ruthenium (Ru) film in this order from the substrate 10 side.
- the temperature compensation film 14 has a temperature coefficient of elastic constant opposite in sign to that of a piezoelectric film 18 .
- the temperature compensation film 14 is, for example, a silicon oxide film to which fluorine is added (an SiOF film).
- the lower electrode 16 is made of, for example, a Ru film.
- the temperature compensation film 14 is located between the additional film 12 and the lower electrode 16 , and thereby the additional film 12 and the lower electrode 16 do not make contact with each other and are not short-circuited. Accordingly, the additional film 12 does not electrically contribute to the excitation of the acoustic wave.
- the piezoelectric film 18 made of aluminum nitride (AlN) having a main axis in a (002) direction is located on the lower electrode 16 and the substrate 10 .
- An upper electrode 20 is located on the piezoelectric film 18 so as to have a region (a resonance region 32 ) facing the lower electrode 16 .
- the resonance region 32 is a region having an elliptical shape and in which the acoustic wave in a thickness extension mode resonates.
- the upper electrode 20 is made of, for example, a metal film formed by stacking a Ru film and a Cr film in this order from the piezoelectric film 18 side.
- An introduction path 34 for etching a sacrifice layer is formed in a stacked portion in which the additional film 12 , the temperature compensation film 14 , and the lower electrode 16 are stacked.
- the sacrifice layer is a layer for forming the air-space 30 .
- the piezoelectric film 18 does not cover the vicinity of the tip of the introduction path 34 , and the stacked portion has a hole portion 36 at the tip of the introduction path 34 .
- An aperture 38 for providing an electrical connection to the lower electrode 16 is formed in the piezoelectric film 18 .
- An underlayer for bumps made of gold (Au) for external connection may be located on the lower electrode 16 located at the bottom of the aperture 38 .
- the substrate 10 may be a quartz substrate, a glass substrate, a ceramic substrate, or a gallium arsenide (GaAs) substrate instead of a Si substrate.
- the lower electrode 16 and the upper electrode 20 may be made of a single-layer film of aluminum (Al), titanium (Ti), copper (Cu), molybdenum (Mo), tungsten (W), tantalum (Ta), platinum (Pt), rhodium (Rh), or iridium (Ir) or a multilayered film of them instead of Ru and Cr.
- the piezoelectric film 18 may be made of zinc oxide (ZnO), lead zirconate titanate (PZT), or lead titanate (PbTiO 3 ) instead of AlN.
- the piezoelectric film 18 mainly contains AlN, and may contain other elements to improve resonance characteristics or piezoelectricity.
- Sc scandium
- the temperature compensation film 14 has a temperature coefficient of elastic constant opposite in sign to that of the piezoelectric film 18 to improve temperature characteristics.
- the piezoelectric film 18 has a negative temperature coefficient of elastic constant when made of AlN. Therefore, a material with a positive temperature coefficient of elastic constant such as an SiOF film is used as the temperature compensation film 14 .
- a material with a positive temperature coefficient of elastic constant can be used, and an insulating film such as a silicon oxide film, a silicon nitride film, or a germanium oxide film may be used.
- the aforementioned films may not have a stoichiometric composition.
- the temperature compensation film 14 may be an insulating film mainly containing silicon oxide, silicon nitride, or germanium oxide, and containing other elements to improve resonance characteristics or temperature characteristics such as an SiOF film.
- the temperature compensation film 14 mainly contains silicon oxide, and one or more of fluorine (F), hydrogen (H), CH 3 , CH 2 , chlorine (Cl), carbon (C), nitrogen (N), phosphorus (P), and sulfur (S) may be added.
- fluorine (F) fluorine
- H hydrogen
- CH 3 , CH 2 chlorine
- chlorine Cl
- C carbon
- N nitrogen
- P phosphorus
- S sulfur
- the use of a silicon oxide film to which other elements are added for the temperature compensation film allows the temperature compensation film 14 to have a high temperature-coefficient of elastic constant, and allows the film thickness of the temperature compensation film 14 to be reduced.
- the additional film 12 has an acoustic impedance greater than that of the temperature compensation film 14 .
- the additional film 12 can be made of a Ru film, a Cr film, a multilayered film of Ru and Cr, an aluminum nitride (AlN) film, or an aluminum oxide (Al 2 O 3 ).
- AlN aluminum nitride
- Al 2 O 3 aluminum oxide
- a material same as the material included in the lower electrode 16 , the upper electrode 20 , or the piezoelectric film 18 may be selected for the additional film 12 .
- FIG. 2A through FIG. 3C are schematic cross-sectional views illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the first embodiment.
- the air-space 30 is formed by using a sacrifice layer to fabricate the piezoelectric thin film resonator illustrated in FIG. 1A through FIG. 1C .
- the following describes methods of forming the additional film 12 , the temperature compensation film 14 , the lower electrode 16 , the piezoelectric film 18 , and the upper electrode 20 , and omits the description of other.
- the additional film 12 is formed on the substrate 10 .
- the additional film 12 is formed by, for example, sputtering, vacuum evaporation, or CVD (Chemical Vapor Deposition).
- the temperature compensation film 14 is formed on the additional film 12 .
- the temperature compensation film 14 is formed by, for example, sputtering or CVD.
- the lower electrode 16 is formed on the temperature compensation film 14 .
- the lower electrode 16 is formed by, for example, sputtering, vacuum evaporation, or CVD.
- the additional film 12 , the temperature compensation film 14 , and the lower electrode 16 are integrally-patterned into a desired shape by photolithography and etching. As described above, the integrated processing of the additional film 12 , the temperature compensation film 14 , and the lower electrode 16 simplifies the fabrication process, and makes them have the same shape.
- the piezoelectric film 18 is formed on the lower electrode 16 and the substrate 10 .
- the piezoelectric film 18 is formed by, for example, sputtering, vacuum evaporation, or CVD.
- the upper electrode 20 is formed on the piezoelectric film 18 .
- the upper electrode 20 is formed by, for example, sputtering, vacuum evaporation, or CVD.
- the upper electrode 20 is patterned into a desired shape by photolithography and etching. This process forms the resonance region 32 in which the lower electrode 16 overlaps with the upper electrode 20 .
- the piezoelectric film 18 is etched by using a photoresist (not illustrated) as an etching mask. This process forms the aperture 38 for providing an electrical connection to the lower electrode 16 .
- the upper electrode 20 may be used as an etching mask instead of the photoresist.
- the piezoelectric film 18 is etched by wet etching or dry etching. When the piezoelectric film 18 is made of AlN, a solution including phosphoric acid may be used as an etching liquid for etching the piezoelectric film 18 .
- the piezoelectric thin film resonator of the first embodiment was fabricated, and temperature dependence of frequency was measured.
- the additional film 12 of the fabricated piezoelectric thin film resonator is a metal film formed by stacking a Cr film with a film thickness of 100 nm and a Ru film with a film thickness of 30 nm in this order from the substrate 10 side.
- the temperature compensation film 14 is an SiOF film with a film thickness of 135 nm and a density of F of 9 atm %.
- the lower electrode 16 is a Ru film with a film thickness of 130 nm.
- the piezoelectric film 18 is an AlN film with a film thickness of 1.2 ⁇ m.
- the upper electrode 20 is a metal film formed by stacking a Ru film with a film thickness of 210 nm and a Cr film with a film thickness of 40 nm in this order from the piezoelectric film 18 side.
- fabricated was a piezoelectric thin film resonator of a first comparative example having the same structure as the first embodiment except that the temperature compensation film 14 is not formed, and temperature dependence of frequency thereof was measured.
- FIG. 4A and FIG. 4B are diagrams illustrating temperature dependence of the resonant frequencies and the anti-resonant frequencies of the piezoelectric thin film resonators of the first comparative example and the first embodiment.
- the resonant frequency fr is obtained by measuring reflection characteristics S 11 of the piezoelectric thin film resonator.
- the anti-resonant frequency fa is obtained by measuring pass characteristics S 21 of the piezoelectric thin film resonator.
- FIG. 4A and FIG. 4B illustrate measurement results of S 11 and S 21 of the piezoelectric thin film resonator when S 11 and S 21 were measured at 20° C. intervals from ⁇ 35° C. to 85° C.
- the piezoelectric thin film resonator of the first comparative example has a temperature coefficient of resonant frequency fr of ⁇ 27.3 ppm/° C. and a temperature coefficient of anti-resonant frequency fa of ⁇ 32.1 ppm/° C.
- the piezoelectric thin film resonator of the first embodiment has a temperature coefficient of resonant frequency fr of ⁇ 11.6 ppm/° C. and a temperature coefficient of anti-resonant frequency fa of ⁇ 10.5 ppm/° C.
- the temperature coefficient of the first embodiment increases by approximately 20 ppm/° C. compared to that of the first comparative example.
- the reason why the temperature coefficient of frequency is decreased in the first embodiment is because the temperature compensation film 14 with a temperature coefficient of elastic constant opposite in sign to that of the piezoelectric film 18 is located. As described above, the temperature dependence of the resonant frequency and the anti-resonant frequency can be reduced by locating the temperature compensation film 14 on the surface of the lower electrode 16 opposite to the piezoelectric film 18 .
- Table 1 presents the materials and the film thicknesses of the layers of the piezoelectric thin film resonator used in the simulation.
- the simulation is performed to a piezoelectric thin film resonator of a second comparative example not including the additional film 12 .
- the film thicknesses of the additional film 12 , the temperature compensation film 14 , and the lower electrode 16 are adjusted so that samples 1 to 3 used in the simulation have the same temperature characteristics (a temperature coefficient of resonant frequency of approximately ⁇ 10 ppm/° C.).
- a protective film is located on the upper electrode 20 .
- FIG. 5A illustrates simulation results of the Q value of the resonant frequency
- FIG. 5B illustrates simulation results of the Q value of the anti-resonant frequency
- FIG. 5C illustrates simulation results of the electromechanical coupling coefficient.
- the sample 1 and the sample 2 including the additional film 12 have good Q values of the resonant frequency and the anti-resonant frequency compared to the sample 3 not including the additional film 12 (the second comparative example).
- the reason why the provision of the additional film 12 results in the good Q value is considered as follows.
- the acoustic wave energy is confined between the temperature compensation film 14 and the protective film formed on the upper electrode 20 (not illustrated), and the strength thereof decreases at closer distances to the temperature compensation film 14 and the protective film (not illustrated). Accordingly, the temperature compensation film 14 is located in a part where the acoustic wave energy is low, and the temperature compensation film 14 needs to be thicken to improve temperature characteristics as presented in Table 1.
- the acoustic wave energy is confined between the additional film 12 and the protective film (not illustrated).
- the temperature compensation film 14 is located in a part where the acoustic wave energy is greater than that of a case where the additional film 12 is not provided, and the thickness of the temperature compensation film 14 to improve the temperature characteristics can be reduced as presented in Table 1.
- the provision of the additional film 12 allows the thickness of the temperature compensation film 14 for improving temperature characteristics to be reduced, and thereby, the Q values of the resonant frequency and the anti-resonant frequency are improved in the sample 1 and the sample 2 (the first embodiment).
- the electromechanical coupling coefficient decreases.
- the temperature compensation film 14 is located under the lower electrode 16 , and thereby a good electromechanical coupling coefficient can be obtained as illustrated in FIG. 5C .
- the Q values equivalent to each other and the electromechanical coupling coefficients equivalent to each other are obtained between the cases where the additional film 12 is a Ru film (sample 1) and an AlN film (sample 2) when the mass per unit area is made to be the same between both cases.
- the piezoelectric thin film resonator of the first embodiment was fabricated, and the Q value of the resonant frequency, the Q value of the anti-resonant frequency, and the electromechanical coupling coefficient were measured.
- Table 2 presents the materials and the film thicknesses of the layers of the fabricated piezoelectric thin film resonator.
- the thicknesses of the additional film 12 , the temperature compensation film 14 , and the lower electrode 16 were adjusted so that fabricated samples 4, 5 had the same temperature characteristics (a temperature coefficient of resonant frequency of approximately ⁇ 10 ppm/° C.).
- a protective film was located on the upper electrode 20 .
- FIG. 6A illustrates measurement results of the Q value of the resonant frequency
- FIG. 6B illustrates measurement results of the Q value of the anti-resonant frequency
- FIG. 6C illustrates measurement results of the electromechanical coupling coefficient.
- the sample 4 and the sample 5 obtain good results in the Q value of the resonant frequency, the Q value of the anti-resonant frequency, and the electromechanical coupling coefficient.
- the Q value of the anti-resonant frequency of the sample 5 is greater than that of the sample 4.
- the sample 4 uses only a Cr film for the additional film 12 while the sample 5 uses a Ru film with an acoustic impedance greater than that of Cr for the additional film 12 in addition to the Cr film and reduces the thickness of the lower electrode 16 .
- This allows the sample 5 to reduce the film thickness of the temperature compensation film 14 to obtain the same temperature characteristics compared to the sample 4 because the temperature compensation film 14 in the sample 5 comes closer to the piezoelectric film 18 , and thereby, the Q value of the anti-resonant frequency is improved.
- the thickness of the temperature compensation film 14 can be reduced by using a film with a high acoustic impedance for the additional film 12 and reducing the thickness of the lower electrode 16 , and thereby the resonance characteristics can be improved.
- the first embodiment locates the temperature compensation film 14 on the surface of the lower electrode 16 opposite to the piezoelectric film 18 , and the temperature compensation film 14 has a temperature coefficient of elastic constant opposite in sign to the temperature coefficient of elastic constant of the piezoelectric film 18 .
- This structure allows the reduction in temperature dependence of frequency as illustrated in FIG. 4A and FIG. 4B .
- the additional film 12 is located on the surface of the temperature compensation film 14 opposite to the piezoelectric film 18 , and the additional film 12 has an acoustic impedance greater than that of the temperature compensation film 14 . This structure makes it possible to obtain good resonance characteristics as illustrated in FIG. 5A and FIG. 6C .
- the additional film 12 may include the same material as the lower electrode 16 and the upper electrode 20 . Additionally, when the additional film 12 is made of an insulating material, the additional film 12 may contain the same material as the piezoelectric film 18 .
- the temperature compensation film 14 and the additional film 12 are preferably provided so as to cover the resonance region 32 to reduce temperature dependence of frequency.
- the temperature compensation film 14 and the additional film 12 are preferably provided so as to cover the whole of the resonance region 32 .
- the thickness of the film in the resonance region 32 can be uniform.
- the degradation of resonance characteristics disclosed in Japanese Patent Application Publication No. 2006-109472 can be suppressed.
- FIG. 7A is a top view illustrating a piezoelectric thin film resonator in accordance with the second embodiment
- FIG. 7B is a cross-sectional view taken along line A-A in FIG. 7A
- FIG. 7C is an enlarged schematic cross-sectional view of a resonance region.
- the temperature compensation film 14 is located on the upper electrode 20
- the additional film 12 is located on the temperature compensation film 14 .
- the upper electrode 20 and the additional film 12 are not short-circuited, and the additional film 12 does not electrically contribute to the excitation of the acoustic wave.
- Other structures are the same as those illustrated in FIG. 1A through FIG. 1C of the first embodiment, and a description thereof is omitted.
- FIG. 8A through FIG. 9C are schematic cross-sectional views illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the second embodiment.
- a description will be given of steps of forming the additional film 12 , the temperature compensation film 14 , the lower electrode 16 , the piezoelectric film 18 , and the upper electrode 20 , and a description of other steps is omitted.
- the lower electrode 16 is formed on the substrate 10 . Then, the lower electrode 16 is patterned into a desired shape by photolithography and etching. As illustrated in FIG. 8B , the piezoelectric film 18 is formed on the lower electrode 16 and the substrate 10 . As illustrated in FIG. 8C , the upper electrode 20 is formed on the piezoelectric film 18 . As illustrated in FIG. 8D , the temperature compensation film 14 is formed on the upper electrode 20 .
- the additional film 12 is formed on the temperature compensation film 14 .
- the additional film 12 , the temperature compensation film 14 , and the upper electrode 20 are integrally-patterned into a desired shape by photolithography and etching. This process forms the resonance region 32 in which the lower electrode 16 overlaps with the upper electrode 20 .
- the piezoelectric film 18 is etched by using a photoresist (not illustrated) as an etching mask. This process forms the aperture 38 for providing an electrical connection to the lower electrode 16 .
- the additional film 12 may be used as an etching mask.
- the piezoelectric thin film resonator of the second embodiment was fabricated, and the Q value of the resonant frequency, the Q value of the anti-resonant frequency, and the electromechanical coupling coefficient were measured.
- Table 3 presents the materials and the film thicknesses of the layers of the fabricated piezoelectric thin film resonator.
- the film thicknesses of the additional film 12 , the temperature compensation film 14 , and the upper electrode 20 were adjusted so that the fabricated samples 6, 7 had the same temperature characteristics (a temperature coefficient of resonant frequency of approximately ⁇ 15 ppm/° C.).
- a protective film was located on the additional film 12 .
- FIG. 10A illustrates measurement results of the Q value of the resonant frequency
- FIG. 10B illustrates measurement results of the Q value of the anti-resonant frequency
- FIG. 10C illustrates measurement results of the electromechanical coupling coefficient.
- the Q value of the resonant frequency of the sample 6 decreases compared to that of the sample 7.
- the sample 6 reduces the thickness of the upper electrode 20 to make the temperature compensation film 14 closer to the piezoelectric film 18 , and thereby reduces the thickness of the temperature compensation film 14 to obtain the same temperature characteristics as the sample 7.
- the upper electrode 20 when the upper electrode 20 is too thin, the electric loss due to resistance increases in the excitation of the acoustic wave, and the Q value of the resonant frequency decreases. Therefore, it is now revealed that when the upper electrode 20 and the additional film 12 contain the same material, the upper electrode 20 preferably has a thickness greater than that of the additional film 12 to improve resonance characteristics.
- the mass of the upper electrode 20 is 1, the mass ratio of the additional film 12 is approximately 11 in the sample 6 and approximately 0.5 in the sample 7. This reveals that the resonance characteristics can be improved by making the mass per unit area of the electrode (here, the upper electrode 20 ) to which the additional film 12 is provided greater than that of the additional film 12 .
- the temperature compensation film 14 may be located on the surface of the upper electrode 20 opposite to the piezoelectric film 18
- the additional film 12 may be located on the surface of the temperature compensation film 14 opposite to the piezoelectric film 18 . It is sufficient if the temperature compensation film 14 is located on the surface, which is opposite to the piezoelectric film 18 , of at least one of the lower electrode 16 and the upper electrode 20 , and the additional film 12 is located on the surface of the temperature compensation film 14 opposite to the piezoelectric film 18 .
- the results illustrated in FIG. 10A and FIG. 10C reveal that the electrode (the upper electrode 20 ) to which the additional film 12 is provided preferably has a mass per unit area greater than that of the additional film 12 .
- the second embodiment describes a case where the additional film 12 is a metal film containing the same material as the upper electrode 20 .
- better resonance characteristics can be obtained by meeting the aforementioned condition even when the additional film 12 is made of a metal different from the upper electrode 20 or an insulating material.
- the upper electrode 20 preferably has a thickness greater than that of the additional film 12 to obtain good resonance characteristics.
- the additional film 12 , the temperature compensation film 14 , and the upper electrode 20 are integrally-formed to simplify the production, and thus have the same shape. That is to say, the additional film 12 and the temperature compensation film 14 are provided so as to cover the resonance region 32 in the same manner as the first embodiment.
- FIG. 11A is a top view illustrating a piezoelectric thin film resonator in accordance with a third embodiment
- FIG. 11B is a cross-sectional view taken along line A-A in FIG. 11A
- FIG. 11C is an enlarged schematic cross-sectional view of a resonance region.
- the temperature compensation film 14 located on the lower surface of the lower electrode 16 extends from the resonance region 32 so as to cover the lower surface of the piezoelectric film 18 .
- the temperature compensation film 14 extends so as to cover at least the whole of the lower surface of the piezoelectric film 18 .
- Other structures are the same as those illustrated in FIG. 1A through FIG. 1C of the first embodiment, and a description thereof is omitted.
- the additional film 12 is patterned into the same shape as the lower electrode 16 , but may extend so as to cover the lower surface of the piezoelectric film 18 as the temperature compensation film 14 does.
- FIG. 12A through FIG. 13D are schematic cross-sectional views illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the third embodiment.
- a description will be given of steps of forming the additional film 12 , the temperature compensation film 14 , the lower electrode 16 , the piezoelectric film 18 , and the upper electrode 20 , and a description of other steps is omitted.
- the additional film 12 is formed on the substrate 10 .
- the additional film 12 is patterned into a desired shape by photolithography and etching.
- the temperature compensation film 14 is formed on the additional film 12 and the substrate 10 .
- the lower electrode 16 is formed on the temperature compensation film 14 .
- the lower electrode 16 is patterned into a desired shape by photolithography and etching.
- the piezoelectric film 18 is formed on the lower electrode 16 and the temperature compensation film 14 .
- the upper electrode 20 is formed on the piezoelectric film 18 .
- the upper electrode 20 is patterned into a desired shape by photolithography and etching. This process forms the resonance region 32 in which the lower electrode 16 overlaps with the upper electrode 20 .
- the piezoelectric film 18 is etched by using a photoresist (not illustrated) as an etching mask. This process forms the aperture 38 for providing an electrical connection to the lower electrode 16 .
- the temperature compensation film 14 is located on the surface of the lower electrode 16 opposite to the piezoelectric film 18 , and extends from the resonance region 32 so as to cover the lower surface of the piezoelectric film 18 .
- This structure protects the lower surface of the piezoelectric film 18 by the temperature compensation film 14 , and can suppress the damage inflicted on the piezoelectric film 18 during the fabrication process or after the device is completed, and thus can improve the reliability.
- FIG. 14A is a top view illustrating a piezoelectric thin film resonator in accordance with the fourth embodiment
- FIG. 14B is a cross-sectional view taken along line A-A in FIG. 14A
- a recessed portion is formed in the upper surface of the substrate 10 .
- the additional film 12 , the temperature compensation film 14 , and the lower electrode 16 are flatly formed on the substrate 10 .
- This structure allows the recessed portion of the substrate 10 to function as the air-space 30 .
- the air-space 30 is formed in the resonance region 32 .
- Other structures are the same as those illustrated in FIG. 1A through FIG. 1C of the first embodiment, and a description is omitted.
- the air-space 30 may be formed so as to penetrate through the substrate 10 .
- FIG. 15A is a top view illustrating a piezoelectric thin film resonator in accordance with the fifth embodiment
- FIG. 15B is a cross-sectional view taken along line A-A in FIG. 15A .
- an acoustic reflection film 42 is located on the lower surface of the additional film 12 in the resonance region 32 .
- the acoustic reflection film 42 is a film reflecting the acoustic wave propagating through the piezoelectric film 18 , and is formed by alternately stacking a film 40 a with a low acoustic impedance and a film 40 b with a high acoustic impedance.
- the film 40 a with a low acoustic impedance and the film 40 b with a high acoustic impedance have film thicknesses of approximately ⁇ /4 ( ⁇ is the wavelength of the acoustic wave).
- the number of stacked films 40 a with a low acoustic impedance and stacked films 40 b with a high acoustic impedance can be arbitrarily determined.
- the additional film 12 and the temperature compensation film 14 have film thicknesses sufficiently less than ⁇ /4, and thus do not function as the acoustic reflection film.
- Other structures are the same as those illustrated in FIG. 1A through FIG. 1C of the first embodiment, and a description thereof is omitted.
- the piezoelectric thin film resonator may have an FBAR structure in which the air-space 30 is located below the lower electrode 16 in the resonance region 32 as described in the first through fourth embodiments.
- the piezoelectric thin film resonator may have an SMR (Solidly Mounted Resonator) structure in which the acoustic reflection film 42 is located below the lower electrode 16 in the resonance region 32 .
- the temperature compensation film 14 is located on the lower surface of the lower electrode 16 and the additional film 12 is located on the lower surface of the temperature compensation film 14 as in the first embodiment.
- the temperature compensation film 14 may be located on the upper surface of the upper electrode 20 and the additional film 12 may be located on the upper surface of the temperature compensation film 14 as in the second embodiment.
- the temperature compensation film 14 located on the lower surface of the lower electrode 16 may cover the lower surface of the piezoelectric film 18 in the same manner as the third embodiment.
- FIG. 16 is a circuit diagram illustrating a ladder-type filter in accordance with the sixth embodiment.
- the ladder-type filter includes one or more series resonators S 1 ⁇ S 3 and one or more parallel resonators P 1 ⁇ P 2 .
- the series resonators S 1 ⁇ S 3 are connected in series between input/output terminals T 1 and T 2 .
- the parallel resonators P 1 ⁇ P 2 are connected in parallel between the input/output terminals T 1 and T 2 .
- At least one of the series resonators S 1 ⁇ S 3 and the parallel resonators P 1 ⁇ P 2 can be any one of the piezoelectric thin film resonators described in the first embodiment through the fifth embodiments.
- the series resonator can have a different resonant frequency from the parallel resonator by changing the film thickness of the upper electrode for example.
- a mass load film to separately control the resonant frequency of each resonator may be provided.
- a frequency adjusting film to simultaneously adjust the resonant frequencies of the series resonator and the parallel resonator may be located on the upper electrode including at least the resonance region.
- the frequency adjusting film may be formed of an insulating layer for example.
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Abstract
An acoustic wave device includes: a piezoelectric film located on a substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film; a temperature compensation film located on a surface, which is opposite to the piezoelectric film, of at least one of the lower electrode and the upper electrode and having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric film; and an additional film located on a surface of the temperature compensation film opposite to the piezoelectric film and having an acoustic impedance greater than an acoustic impedance of the temperature compensation film.
Description
- This application is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2013-122085, filed on Jun. 10, 2013, the entire contents of which are incorporated herein by reference.
- A certain aspect of the present invention relates to an acoustic wave device.
- Piezoelectric thin film resonators using a Bulk Acoustic Wave (BAW) are used for filters and duplexers of wireless devices such as mobile phones. The piezoelectric thin film resonator has a structure designed to have a lower electrode and an upper electrode facing each other across a piezoelectric film. A region in which the lower electrode and the upper electrode face each other across the piezoelectric film is a resonance region. The piezoelectric film of the piezoelectric thin film resonator generally has a negative temperature coefficient of elastic constant. Therefore, the resonant frequency of the piezoelectric thin film resonator is shifted to a low frequency side as temperature increases. As described above, in an acoustic wave device using the piezoelectric thin film resonator, the resonant frequency, the anti-resonant frequency, and the passband change due to temperature.
- To suppress the frequency change due to temperature, there has been suggested piezoelectric thin film resonators using an insulating film with a temperature coefficient of elastic constant opposite in sign to that of the piezoelectric film as a temperature compensation film as disclosed in Japanese Patent Application Publication Nos. 58-137317, 2013-38471, 2013-34130, and 2013-38658. To suppress a decrease in electromechanical coupling coefficient caused by the use of the temperature compensation film, there has been suggested piezoelectric thin film resonators including short-circuited conductive films formed on the upper and lower surfaces of a temperature compensation film and piezoelectric thin film resonators including a temperature compensation film embedded in the lower electrode or the upper electrode as disclosed in Japanese Patent Application Publication No. 60-16010, US Patent Application Publication No. 2011/0266925, and U.S. Pat. No. 6,420,820. Additionally, there has been known that resonance characteristics degrade when the peripheral portion of the electrode in the resonance region is thinner than a center portion as disclosed in Japanese Patent Application Publication No. 2006-109472.
- When a temperature compensation film is located in the piezoelectric film to suppress the frequency change due to temperature, the electromechanical coupling coefficient decreases. When a temperature compensation film is embedded in the lower electrode or the upper electrode, electrodes on the upper and lower surfaces of the temperature compensation film are short-circuited, and thus the peripheral portion of the lower electrode or the upper electrode in the resonance region is thinner than the center portion, and resonance characteristics degrade as disclosed in Japanese Patent Application Publication No. 2006-109472.
- According to an aspect of the present invention, there is provided an acoustic wave device including: a piezoelectric film located on a substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film; a temperature compensation film located on a surface, which is opposite to the piezoelectric film, of at least one of the lower electrode and the upper electrode and having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric film; and an additional film located on a surface of the temperature compensation film opposite to the piezoelectric film and having an acoustic impedance greater than an acoustic impedance of the temperature compensation film.
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FIG. 1A is a top view illustrating a piezoelectric thin film resonator in accordance with a first embodiment,FIG. 1B is a cross-sectional view taken along line A-A inFIG. 1A , and -
FIG. 1C is an enlarged schematic cross-sectional view of a resonance region; -
FIG. 2A throughFIG. 2D are schematic cross-sectional views (No. 1) illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the first embodiment; -
FIG. 3A throughFIG. 3C are schematic cross-sectional views (No. 2) illustrating the method of fabricating the piezoelectric thin film resonator in accordance with the first embodiment; -
FIG. 4A andFIG. 4B are diagrams illustrating temperature dependence of resonant frequencies and anti-resonant frequencies of the piezoelectric thin film resonators in accordance with a first comparative example and the first embodiment; -
FIG. 5A illustrates simulation results of the Q value of the resonant frequency,FIG. 5B illustrates simulation results of the Q value of the anti-resonant frequency, andFIG. 5C illustrates simulation results of an electromechanical coupling coefficient; -
FIG. 6A illustrates measurement results of the Q value of the resonant frequency,FIG. 6B illustrates measurement results of the Q value of the anti-resonant frequency, andFIG. 6C illustrates measurement results of the electromechanical coupling coefficient; -
FIG. 7A is a top view illustrating a piezoelectric thin film resonator in accordance with a second embodiment,FIG. 7B is a cross-sectional view taken along line A-A inFIG. 7A , andFIG. 7C is an enlarged schematic cross-sectional view of a resonance region; -
FIG. 8A throughFIG. 8D are schematic cross-sectional views (No. 1) illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the second embodiment; -
FIG. 9A throughFIG. 9C are schematic cross-sectional views (No. 2) illustrating the method of fabricating the piezoelectric thin film resonator in accordance with the second embodiment; -
FIG. 10A illustrates measurement results of the Q value of the resonant frequency,FIG. 10B illustrates measurement results of the Q value of the anti-resonant frequency, andFIG. 10C illustrates measurement results of the electromechanical coupling coefficient; -
FIG. 11A is a top view illustrating a piezoelectric thin film resonator in accordance with a third embodiment,FIG. 11B is a cross-sectional view taken along line A-A inFIG. 11A , andFIG. 11C is an enlarged schematic cross-sectional view of a resonance region; -
FIG. 12A throughFIG. 12D are schematic cross-sectional views (No. 1) illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the third embodiment; -
FIG. 13A throughFIG. 13D are schematic cross-sectional views (No. 2) illustrating the method of fabricating the piezoelectric thin film resonator in accordance with the third embodiment; -
FIG. 14A is a top view illustrating a piezoelectric thin film resonator in accordance with a fourth embodiment, andFIG. 14B is a cross-sectional view taken along line A-A inFIG. 14A ; -
FIG. 15A is a top view illustrating a piezoelectric thin film resonator in accordance with a fifth embodiment, andFIG. 15B is a cross-sectional view taken along line A-A inFIG. 15A ; and -
FIG. 16 is a circuit diagram illustrating a ladder-type filter in accordance with a sixth embodiment. - Hereinafter, a description will be given of embodiments of the present invention with reference to the attached drawings.
- A first embodiment describes a piezoelectric thin film resonator having an FBAR (Film Bulk Acoustic Resonator) structure employed in an acoustic wave device such as a filter.
FIG. 1A is a top view illustrating a piezoelectric thin film resonator in accordance with the first embodiment,FIG. 1B is a cross-sectional view taken along line A-A inFIG. 1A , andFIG. 1C is an enlarged schematic cross-sectional view of a resonance region. As illustrated inFIG. 1A throughFIG. 1C , anadditional film 12 is located on asubstrate 10 made of, for example, a silicon (Si) substrate so that an air-space 30 having a dome-shaped bulge is formed between theadditional film 12 and the upper surface of thesubstrate 10. The dome-shaped bulge has a shape in which the height of the air-space 30 is low in the periphery of the air-space 30 and the height of the air-space 30 increases at closer distance to the center of the air-space 30. - A
temperature compensation film 14 is located on theadditional film 12. Alower electrode 16 is located on thetemperature compensation film 14. Theadditional film 12, thetemperature compensation film 14, and thelower electrode 16 have the same shape. Theadditional film 12 has an acoustic impedance greater than that of thetemperature compensation film 14. Theadditional film 12 is, for example, a metal film formed by stacking a chrome (Cr) film and a ruthenium (Ru) film in this order from thesubstrate 10 side. Thetemperature compensation film 14 has a temperature coefficient of elastic constant opposite in sign to that of apiezoelectric film 18. Thetemperature compensation film 14 is, for example, a silicon oxide film to which fluorine is added (an SiOF film). Thelower electrode 16 is made of, for example, a Ru film. Thetemperature compensation film 14 is located between theadditional film 12 and thelower electrode 16, and thereby theadditional film 12 and thelower electrode 16 do not make contact with each other and are not short-circuited. Accordingly, theadditional film 12 does not electrically contribute to the excitation of the acoustic wave. - The
piezoelectric film 18 made of aluminum nitride (AlN) having a main axis in a (002) direction is located on thelower electrode 16 and thesubstrate 10. Anupper electrode 20 is located on thepiezoelectric film 18 so as to have a region (a resonance region 32) facing thelower electrode 16. Theresonance region 32 is a region having an elliptical shape and in which the acoustic wave in a thickness extension mode resonates. Theupper electrode 20 is made of, for example, a metal film formed by stacking a Ru film and a Cr film in this order from thepiezoelectric film 18 side. - An
introduction path 34 for etching a sacrifice layer is formed in a stacked portion in which theadditional film 12, thetemperature compensation film 14, and thelower electrode 16 are stacked. The sacrifice layer is a layer for forming the air-space 30. Thepiezoelectric film 18 does not cover the vicinity of the tip of theintroduction path 34, and the stacked portion has ahole portion 36 at the tip of theintroduction path 34. Anaperture 38 for providing an electrical connection to thelower electrode 16 is formed in thepiezoelectric film 18. An underlayer for bumps made of gold (Au) for external connection may be located on thelower electrode 16 located at the bottom of theaperture 38. - The
substrate 10 may be a quartz substrate, a glass substrate, a ceramic substrate, or a gallium arsenide (GaAs) substrate instead of a Si substrate. Thelower electrode 16 and theupper electrode 20 may be made of a single-layer film of aluminum (Al), titanium (Ti), copper (Cu), molybdenum (Mo), tungsten (W), tantalum (Ta), platinum (Pt), rhodium (Rh), or iridium (Ir) or a multilayered film of them instead of Ru and Cr. - The
piezoelectric film 18 may be made of zinc oxide (ZnO), lead zirconate titanate (PZT), or lead titanate (PbTiO3) instead of AlN. In addition, thepiezoelectric film 18 mainly contains AlN, and may contain other elements to improve resonance characteristics or piezoelectricity. For example, the use of scandium (Sc) as an additive element improves the piezoelectricity of thepiezoelectric film 18, and improves the effective electromechanical coupling coefficient of the piezoelectric thin film resonator. - The
temperature compensation film 14 has a temperature coefficient of elastic constant opposite in sign to that of thepiezoelectric film 18 to improve temperature characteristics. For example, thepiezoelectric film 18 has a negative temperature coefficient of elastic constant when made of AlN. Therefore, a material with a positive temperature coefficient of elastic constant such as an SiOF film is used as thetemperature compensation film 14. Instead of SiOF, a material with a positive temperature coefficient of elastic constant can be used, and an insulating film such as a silicon oxide film, a silicon nitride film, or a germanium oxide film may be used. The aforementioned films may not have a stoichiometric composition. Additionally, thetemperature compensation film 14 may be an insulating film mainly containing silicon oxide, silicon nitride, or germanium oxide, and containing other elements to improve resonance characteristics or temperature characteristics such as an SiOF film. For example, thetemperature compensation film 14 mainly contains silicon oxide, and one or more of fluorine (F), hydrogen (H), CH3, CH2, chlorine (Cl), carbon (C), nitrogen (N), phosphorus (P), and sulfur (S) may be added. As described above, the use of a silicon oxide film to which other elements are added for the temperature compensation film allows thetemperature compensation film 14 to have a high temperature-coefficient of elastic constant, and allows the film thickness of thetemperature compensation film 14 to be reduced. - The
additional film 12 has an acoustic impedance greater than that of thetemperature compensation film 14. For example, when thetemperature compensation film 14 is made of an SiOF film, theadditional film 12 can be made of a Ru film, a Cr film, a multilayered film of Ru and Cr, an aluminum nitride (AlN) film, or an aluminum oxide (Al2O3). As described above, a material same as the material included in thelower electrode 16, theupper electrode 20, or thepiezoelectric film 18 may be selected for theadditional film 12. -
FIG. 2A throughFIG. 3C are schematic cross-sectional views illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the first embodiment. The air-space 30 is formed by using a sacrifice layer to fabricate the piezoelectric thin film resonator illustrated inFIG. 1A throughFIG. 1C . However, the following describes methods of forming theadditional film 12, thetemperature compensation film 14, thelower electrode 16, thepiezoelectric film 18, and theupper electrode 20, and omits the description of other. - As illustrated in
FIG. 2A , theadditional film 12 is formed on thesubstrate 10. Theadditional film 12 is formed by, for example, sputtering, vacuum evaporation, or CVD (Chemical Vapor Deposition). As illustrated inFIG. 2B , thetemperature compensation film 14 is formed on theadditional film 12. Thetemperature compensation film 14 is formed by, for example, sputtering or CVD. As illustrated inFIG. 2C , thelower electrode 16 is formed on thetemperature compensation film 14. Thelower electrode 16 is formed by, for example, sputtering, vacuum evaporation, or CVD. - As illustrated in
FIG. 2D , theadditional film 12, thetemperature compensation film 14, and thelower electrode 16 are integrally-patterned into a desired shape by photolithography and etching. As described above, the integrated processing of theadditional film 12, thetemperature compensation film 14, and thelower electrode 16 simplifies the fabrication process, and makes them have the same shape. - As illustrated in
FIG. 3A , thepiezoelectric film 18 is formed on thelower electrode 16 and thesubstrate 10. Thepiezoelectric film 18 is formed by, for example, sputtering, vacuum evaporation, or CVD. As illustrated inFIG. 3B , theupper electrode 20 is formed on thepiezoelectric film 18. Theupper electrode 20 is formed by, for example, sputtering, vacuum evaporation, or CVD. Then, theupper electrode 20 is patterned into a desired shape by photolithography and etching. This process forms theresonance region 32 in which thelower electrode 16 overlaps with theupper electrode 20. - As illustrated in
FIG. 3C , thepiezoelectric film 18 is etched by using a photoresist (not illustrated) as an etching mask. This process forms theaperture 38 for providing an electrical connection to thelower electrode 16. Theupper electrode 20 may be used as an etching mask instead of the photoresist. Thepiezoelectric film 18 is etched by wet etching or dry etching. When thepiezoelectric film 18 is made of AlN, a solution including phosphoric acid may be used as an etching liquid for etching thepiezoelectric film 18. - The piezoelectric thin film resonator of the first embodiment was fabricated, and temperature dependence of frequency was measured. The
additional film 12 of the fabricated piezoelectric thin film resonator is a metal film formed by stacking a Cr film with a film thickness of 100 nm and a Ru film with a film thickness of 30 nm in this order from thesubstrate 10 side. Thetemperature compensation film 14 is an SiOF film with a film thickness of 135 nm and a density of F of 9 atm %. Thelower electrode 16 is a Ru film with a film thickness of 130 nm. Thepiezoelectric film 18 is an AlN film with a film thickness of 1.2 μm. Theupper electrode 20 is a metal film formed by stacking a Ru film with a film thickness of 210 nm and a Cr film with a film thickness of 40 nm in this order from thepiezoelectric film 18 side. For comparison, fabricated was a piezoelectric thin film resonator of a first comparative example having the same structure as the first embodiment except that thetemperature compensation film 14 is not formed, and temperature dependence of frequency thereof was measured. -
FIG. 4A andFIG. 4B are diagrams illustrating temperature dependence of the resonant frequencies and the anti-resonant frequencies of the piezoelectric thin film resonators of the first comparative example and the first embodiment. The resonant frequency fr is obtained by measuring reflection characteristics S11 of the piezoelectric thin film resonator. The anti-resonant frequency fa is obtained by measuring pass characteristics S21 of the piezoelectric thin film resonator.FIG. 4A andFIG. 4B illustrate measurement results of S11 and S21 of the piezoelectric thin film resonator when S11 and S21 were measured at 20° C. intervals from −35° C. to 85° C. - As illustrated in
FIG. 4A , the piezoelectric thin film resonator of the first comparative example has a temperature coefficient of resonant frequency fr of −27.3 ppm/° C. and a temperature coefficient of anti-resonant frequency fa of −32.1 ppm/° C. On the other hand, as illustrated inFIG. 4B , the piezoelectric thin film resonator of the first embodiment has a temperature coefficient of resonant frequency fr of −11.6 ppm/° C. and a temperature coefficient of anti-resonant frequency fa of −10.5 ppm/° C. As described above, the temperature coefficient of the first embodiment increases by approximately 20 ppm/° C. compared to that of the first comparative example. The reason why the temperature coefficient of frequency is decreased in the first embodiment is because thetemperature compensation film 14 with a temperature coefficient of elastic constant opposite in sign to that of thepiezoelectric film 18 is located. As described above, the temperature dependence of the resonant frequency and the anti-resonant frequency can be reduced by locating thetemperature compensation film 14 on the surface of thelower electrode 16 opposite to thepiezoelectric film 18. - A description will next be given of a simulation that measures the Q value of the resonant frequency, the Q value of the anti-resonant frequency, and the electromechanical coupling coefficient of the piezoelectric thin film resonator of the first embodiment. Table 1 presents the materials and the film thicknesses of the layers of the piezoelectric thin film resonator used in the simulation. For comparison, the simulation is performed to a piezoelectric thin film resonator of a second comparative example not including the
additional film 12. The film thicknesses of theadditional film 12, thetemperature compensation film 14, and thelower electrode 16 are adjusted so thatsamples 1 to 3 used in the simulation have the same temperature characteristics (a temperature coefficient of resonant frequency of approximately −10 ppm/° C.). In addition, a protective film is located on theupper electrode 20. -
TABLE 1 Piezo- Temperature Protective Upper electric Lower compensation Additional film electrode film electrode film film SiO2 Cr Ru AlN Ru SiOF Ru AlN First Sample 1 50 40 200 1150 135 190 50 — Embodiment Sample 2 50 40 200 1150 135 190 — 181 Second Sample 3 50 40 200 1150 135 410 — — Comparative Example UNIT: nm -
FIG. 5A illustrates simulation results of the Q value of the resonant frequency,FIG. 5B illustrates simulation results of the Q value of the anti-resonant frequency, andFIG. 5C illustrates simulation results of the electromechanical coupling coefficient. As illustrated inFIG. 5A andFIG. 5B , thesample 1 and thesample 2 including the additional film 12 (the first embodiment) have good Q values of the resonant frequency and the anti-resonant frequency compared to thesample 3 not including the additional film 12 (the second comparative example). The reason why the provision of theadditional film 12 results in the good Q value is considered as follows. - That is to say, when the
additional film 12 is not provided, the acoustic wave energy is confined between thetemperature compensation film 14 and the protective film formed on the upper electrode 20 (not illustrated), and the strength thereof decreases at closer distances to thetemperature compensation film 14 and the protective film (not illustrated). Accordingly, thetemperature compensation film 14 is located in a part where the acoustic wave energy is low, and thetemperature compensation film 14 needs to be thicken to improve temperature characteristics as presented in Table 1. On the other hand, when theadditional film 12 is provided, the acoustic wave energy is confined between theadditional film 12 and the protective film (not illustrated). Therefore, thetemperature compensation film 14 is located in a part where the acoustic wave energy is greater than that of a case where theadditional film 12 is not provided, and the thickness of thetemperature compensation film 14 to improve the temperature characteristics can be reduced as presented in Table 1. As described above, the provision of theadditional film 12 allows the thickness of thetemperature compensation film 14 for improving temperature characteristics to be reduced, and thereby, the Q values of the resonant frequency and the anti-resonant frequency are improved in thesample 1 and the sample 2 (the first embodiment). When a temperature compensation film is located in the piezoelectric film as described above, the electromechanical coupling coefficient decreases. However, in thesample 1 and the sample 2 (the first embodiment), thetemperature compensation film 14 is located under thelower electrode 16, and thereby a good electromechanical coupling coefficient can be obtained as illustrated inFIG. 5C . - In addition, as illustrated in
FIG. 5A throughFIG. 5C , the Q values equivalent to each other and the electromechanical coupling coefficients equivalent to each other are obtained between the cases where theadditional film 12 is a Ru film (sample 1) and an AlN film (sample 2) when the mass per unit area is made to be the same between both cases. - The piezoelectric thin film resonator of the first embodiment was fabricated, and the Q value of the resonant frequency, the Q value of the anti-resonant frequency, and the electromechanical coupling coefficient were measured. Table 2 presents the materials and the film thicknesses of the layers of the fabricated piezoelectric thin film resonator. The thicknesses of the
additional film 12, thetemperature compensation film 14, and thelower electrode 16 were adjusted so that fabricatedsamples upper electrode 20. -
TABLE 2 Piezo- Temperature Protective Upper electric Lower compensation Additional film electrode film electrode film film SiO2 Cr Ru AlN Ru SiOF Ru Cr First Sample 4 50 40 210 1200 160 200 — 100 Embodiment Sample 5 50 40 210 1200 130 135 30 100 UNIT: nm -
FIG. 6A illustrates measurement results of the Q value of the resonant frequency,FIG. 6B illustrates measurement results of the Q value of the anti-resonant frequency, andFIG. 6C illustrates measurement results of the electromechanical coupling coefficient. As illustrated inFIG. 6A throughFIG. 6C , thesample 4 and the sample 5 (the first embodiment) obtain good results in the Q value of the resonant frequency, the Q value of the anti-resonant frequency, and the electromechanical coupling coefficient. The Q value of the anti-resonant frequency of thesample 5 is greater than that of thesample 4. This is because thesample 4 uses only a Cr film for theadditional film 12 while thesample 5 uses a Ru film with an acoustic impedance greater than that of Cr for theadditional film 12 in addition to the Cr film and reduces the thickness of thelower electrode 16. This allows thesample 5 to reduce the film thickness of thetemperature compensation film 14 to obtain the same temperature characteristics compared to thesample 4 because thetemperature compensation film 14 in thesample 5 comes closer to thepiezoelectric film 18, and thereby, the Q value of the anti-resonant frequency is improved. As described above, the thickness of thetemperature compensation film 14 can be reduced by using a film with a high acoustic impedance for theadditional film 12 and reducing the thickness of thelower electrode 16, and thereby the resonance characteristics can be improved. - As described above, the first embodiment locates the
temperature compensation film 14 on the surface of thelower electrode 16 opposite to thepiezoelectric film 18, and thetemperature compensation film 14 has a temperature coefficient of elastic constant opposite in sign to the temperature coefficient of elastic constant of thepiezoelectric film 18. This structure allows the reduction in temperature dependence of frequency as illustrated inFIG. 4A andFIG. 4B . In addition, theadditional film 12 is located on the surface of thetemperature compensation film 14 opposite to thepiezoelectric film 18, and theadditional film 12 has an acoustic impedance greater than that of thetemperature compensation film 14. This structure makes it possible to obtain good resonance characteristics as illustrated inFIG. 5A andFIG. 6C . - As presented in Table 1 and
FIG. 5A throughFIG. 5C , good resonance characteristics can be obtained not only when theadditional film 12 is made of a metal but also when theadditional film 12 is made of an insulating material. When theadditional film 12 is made of a metal, theadditional film 12 may include the same material as thelower electrode 16 and theupper electrode 20. Additionally, when theadditional film 12 is made of an insulating material, theadditional film 12 may contain the same material as thepiezoelectric film 18. - As illustrated in
FIG. 1A throughFIG. 1C , thetemperature compensation film 14 and theadditional film 12 are preferably provided so as to cover theresonance region 32 to reduce temperature dependence of frequency. For example, thetemperature compensation film 14 and theadditional film 12 are preferably provided so as to cover the whole of theresonance region 32. When thetemperature compensation film 14 and theadditional film 12 are provided so as to cover theresonance region 32, the thickness of the film in theresonance region 32 can be uniform. Thus, the degradation of resonance characteristics disclosed in Japanese Patent Application Publication No. 2006-109472 can be suppressed. - A second embodiment provides the
additional film 12 and thetemperature compensation film 14 to theupper electrode 20.FIG. 7A is a top view illustrating a piezoelectric thin film resonator in accordance with the second embodiment,FIG. 7B is a cross-sectional view taken along line A-A inFIG. 7A , andFIG. 7C is an enlarged schematic cross-sectional view of a resonance region. As illustrated inFIG. 7A throughFIG. 7C , thetemperature compensation film 14 is located on theupper electrode 20, and theadditional film 12 is located on thetemperature compensation film 14. Theupper electrode 20 and theadditional film 12 are not short-circuited, and theadditional film 12 does not electrically contribute to the excitation of the acoustic wave. Other structures are the same as those illustrated inFIG. 1A throughFIG. 1C of the first embodiment, and a description thereof is omitted. -
FIG. 8A throughFIG. 9C are schematic cross-sectional views illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the second embodiment. In the same manner as the first embodiment, a description will be given of steps of forming theadditional film 12, thetemperature compensation film 14, thelower electrode 16, thepiezoelectric film 18, and theupper electrode 20, and a description of other steps is omitted. - As illustrated in
FIG. 8A , thelower electrode 16 is formed on thesubstrate 10. Then, thelower electrode 16 is patterned into a desired shape by photolithography and etching. As illustrated inFIG. 8B , thepiezoelectric film 18 is formed on thelower electrode 16 and thesubstrate 10. As illustrated inFIG. 8C , theupper electrode 20 is formed on thepiezoelectric film 18. As illustrated inFIG. 8D , thetemperature compensation film 14 is formed on theupper electrode 20. - As illustrated in
FIG. 9A , theadditional film 12 is formed on thetemperature compensation film 14. As illustrated inFIG. 9B , theadditional film 12, thetemperature compensation film 14, and theupper electrode 20 are integrally-patterned into a desired shape by photolithography and etching. This process forms theresonance region 32 in which thelower electrode 16 overlaps with theupper electrode 20. As illustrated inFIG. 9C , thepiezoelectric film 18 is etched by using a photoresist (not illustrated) as an etching mask. This process forms theaperture 38 for providing an electrical connection to thelower electrode 16. Theadditional film 12 may be used as an etching mask. - The piezoelectric thin film resonator of the second embodiment was fabricated, and the Q value of the resonant frequency, the Q value of the anti-resonant frequency, and the electromechanical coupling coefficient were measured. Table 3 presents the materials and the film thicknesses of the layers of the fabricated piezoelectric thin film resonator. The film thicknesses of the
additional film 12, thetemperature compensation film 14, and theupper electrode 20 were adjusted so that the fabricatedsamples additional film 12. -
TABLE 3 Temperature Piezo- Protective Additional compensation Upper electric Lower film film film electrode film electrode SiO2 Cr Ru SiOF Ru AlN Ru Cr Second Sample 6 50 40 200 35 20 1200 160 100 Embodiment Sample 7 50 40 50 140 160 1200 160 100 UNIT: nm -
FIG. 10A illustrates measurement results of the Q value of the resonant frequency,FIG. 10B illustrates measurement results of the Q value of the anti-resonant frequency, andFIG. 10C illustrates measurement results of the electromechanical coupling coefficient. As illustrated inFIG. 10A andFIG. 10C , comparable good results are obtained in the Q value of the anti-resonant frequency and the electromechanical coupling coefficient in both thesamples sample 6 decreases compared to that of thesample 7. Thesample 6 reduces the thickness of theupper electrode 20 to make thetemperature compensation film 14 closer to thepiezoelectric film 18, and thereby reduces the thickness of thetemperature compensation film 14 to obtain the same temperature characteristics as thesample 7. However, when theupper electrode 20 is too thin, the electric loss due to resistance increases in the excitation of the acoustic wave, and the Q value of the resonant frequency decreases. Therefore, it is now revealed that when theupper electrode 20 and theadditional film 12 contain the same material, theupper electrode 20 preferably has a thickness greater than that of theadditional film 12 to improve resonance characteristics. When the mass of theupper electrode 20 is 1, the mass ratio of theadditional film 12 is approximately 11 in thesample 6 and approximately 0.5 in thesample 7. This reveals that the resonance characteristics can be improved by making the mass per unit area of the electrode (here, the upper electrode 20) to which theadditional film 12 is provided greater than that of theadditional film 12. - As described in the second embodiment, the
temperature compensation film 14 may be located on the surface of theupper electrode 20 opposite to thepiezoelectric film 18, and theadditional film 12 may be located on the surface of thetemperature compensation film 14 opposite to thepiezoelectric film 18. It is sufficient if thetemperature compensation film 14 is located on the surface, which is opposite to thepiezoelectric film 18, of at least one of thelower electrode 16 and theupper electrode 20, and theadditional film 12 is located on the surface of thetemperature compensation film 14 opposite to thepiezoelectric film 18. - In addition, the results illustrated in
FIG. 10A andFIG. 10C reveal that the electrode (the upper electrode 20) to which theadditional film 12 is provided preferably has a mass per unit area greater than that of theadditional film 12. This makes it possible to obtain better resonance characteristics. The second embodiment describes a case where theadditional film 12 is a metal film containing the same material as theupper electrode 20. However, better resonance characteristics can be obtained by meeting the aforementioned condition even when theadditional film 12 is made of a metal different from theupper electrode 20 or an insulating material. In addition, when theadditional film 12 contains the same material as theupper electrode 20, theupper electrode 20 preferably has a thickness greater than that of theadditional film 12 to obtain good resonance characteristics. - Also in the second embodiment, the
additional film 12, thetemperature compensation film 14, and theupper electrode 20 are integrally-formed to simplify the production, and thus have the same shape. That is to say, theadditional film 12 and thetemperature compensation film 14 are provided so as to cover theresonance region 32 in the same manner as the first embodiment. -
FIG. 11A is a top view illustrating a piezoelectric thin film resonator in accordance with a third embodiment,FIG. 11B is a cross-sectional view taken along line A-A inFIG. 11A , andFIG. 11C is an enlarged schematic cross-sectional view of a resonance region. As illustrated inFIG. 11A throughFIG. 11C , thetemperature compensation film 14 located on the lower surface of thelower electrode 16 extends from theresonance region 32 so as to cover the lower surface of thepiezoelectric film 18. For example, thetemperature compensation film 14 extends so as to cover at least the whole of the lower surface of thepiezoelectric film 18. Other structures are the same as those illustrated inFIG. 1A throughFIG. 1C of the first embodiment, and a description thereof is omitted. Theadditional film 12 is patterned into the same shape as thelower electrode 16, but may extend so as to cover the lower surface of thepiezoelectric film 18 as thetemperature compensation film 14 does. -
FIG. 12A throughFIG. 13D are schematic cross-sectional views illustrating a method of fabricating the piezoelectric thin film resonator in accordance with the third embodiment. As with the first embodiment, a description will be given of steps of forming theadditional film 12, thetemperature compensation film 14, thelower electrode 16, thepiezoelectric film 18, and theupper electrode 20, and a description of other steps is omitted. - As illustrated in
FIG. 12A , theadditional film 12 is formed on thesubstrate 10. As illustrated inFIG. 12B , theadditional film 12 is patterned into a desired shape by photolithography and etching. As illustrated inFIG. 12C , thetemperature compensation film 14 is formed on theadditional film 12 and thesubstrate 10. As illustrated inFIG. 12D , thelower electrode 16 is formed on thetemperature compensation film 14. - As illustrated in
FIG. 13A , thelower electrode 16 is patterned into a desired shape by photolithography and etching. As illustrated inFIG. 13B , thepiezoelectric film 18 is formed on thelower electrode 16 and thetemperature compensation film 14. As illustrated inFIG. 13C , theupper electrode 20 is formed on thepiezoelectric film 18. Then, theupper electrode 20 is patterned into a desired shape by photolithography and etching. This process forms theresonance region 32 in which thelower electrode 16 overlaps with theupper electrode 20. As illustrated inFIG. 13D , thepiezoelectric film 18 is etched by using a photoresist (not illustrated) as an etching mask. This process forms theaperture 38 for providing an electrical connection to thelower electrode 16. - In the third embodiment, the
temperature compensation film 14 is located on the surface of thelower electrode 16 opposite to thepiezoelectric film 18, and extends from theresonance region 32 so as to cover the lower surface of thepiezoelectric film 18. This structure protects the lower surface of thepiezoelectric film 18 by thetemperature compensation film 14, and can suppress the damage inflicted on thepiezoelectric film 18 during the fabrication process or after the device is completed, and thus can improve the reliability. - A fourth embodiment changes a structure of the air-space.
FIG. 14A is a top view illustrating a piezoelectric thin film resonator in accordance with the fourth embodiment, andFIG. 14B is a cross-sectional view taken along line A-A inFIG. 14A . As illustrated inFIG. 14A andFIG. 14B , a recessed portion is formed in the upper surface of thesubstrate 10. Theadditional film 12, thetemperature compensation film 14, and thelower electrode 16 are flatly formed on thesubstrate 10. This structure allows the recessed portion of thesubstrate 10 to function as the air-space 30. The air-space 30 is formed in theresonance region 32. Other structures are the same as those illustrated inFIG. 1A throughFIG. 1C of the first embodiment, and a description is omitted. The air-space 30 may be formed so as to penetrate through thesubstrate 10. - A fifth embodiment provides an acoustic reflection film instead of the air-space.
FIG. 15A is a top view illustrating a piezoelectric thin film resonator in accordance with the fifth embodiment, andFIG. 15B is a cross-sectional view taken along line A-A inFIG. 15A . As illustrated inFIG. 15A andFIG. 15B , anacoustic reflection film 42 is located on the lower surface of theadditional film 12 in theresonance region 32. Theacoustic reflection film 42 is a film reflecting the acoustic wave propagating through thepiezoelectric film 18, and is formed by alternately stacking afilm 40 a with a low acoustic impedance and afilm 40 b with a high acoustic impedance. Thefilm 40 a with a low acoustic impedance and thefilm 40 b with a high acoustic impedance have film thicknesses of approximately λ/4 (λ is the wavelength of the acoustic wave). The number ofstacked films 40 a with a low acoustic impedance andstacked films 40 b with a high acoustic impedance can be arbitrarily determined. Theadditional film 12 and thetemperature compensation film 14 have film thicknesses sufficiently less than λ/4, and thus do not function as the acoustic reflection film. Other structures are the same as those illustrated inFIG. 1A throughFIG. 1C of the first embodiment, and a description thereof is omitted. - As described above, the piezoelectric thin film resonator may have an FBAR structure in which the air-
space 30 is located below thelower electrode 16 in theresonance region 32 as described in the first through fourth embodiments. As described in the fifth embodiment, the piezoelectric thin film resonator may have an SMR (Solidly Mounted Resonator) structure in which theacoustic reflection film 42 is located below thelower electrode 16 in theresonance region 32. In addition, in the fourth and fifth embodiments, thetemperature compensation film 14 is located on the lower surface of thelower electrode 16 and theadditional film 12 is located on the lower surface of thetemperature compensation film 14 as in the first embodiment. However, thetemperature compensation film 14 may be located on the upper surface of theupper electrode 20 and theadditional film 12 may be located on the upper surface of thetemperature compensation film 14 as in the second embodiment. In addition, thetemperature compensation film 14 located on the lower surface of thelower electrode 16 may cover the lower surface of thepiezoelectric film 18 in the same manner as the third embodiment. - A sixth embodiment uses the piezoelectric thin film resonator of one of the first through fifth embodiments for a filter.
FIG. 16 is a circuit diagram illustrating a ladder-type filter in accordance with the sixth embodiment. As illustrated inFIG. 6 , the ladder-type filter includes one or more series resonators S1˜S3 and one or more parallel resonators P1˜P2. The series resonators S1˜S3 are connected in series between input/output terminals T1 and T2. The parallel resonators P1˜P2 are connected in parallel between the input/output terminals T1 and T2. At least one of the series resonators S1˜S3 and the parallel resonators P1˜P2 can be any one of the piezoelectric thin film resonators described in the first embodiment through the fifth embodiments. - The series resonator can have a different resonant frequency from the parallel resonator by changing the film thickness of the upper electrode for example. In addition, a mass load film to separately control the resonant frequency of each resonator may be provided. Furthermore, a frequency adjusting film to simultaneously adjust the resonant frequencies of the series resonator and the parallel resonator may be located on the upper electrode including at least the resonance region. The frequency adjusting film may be formed of an insulating layer for example.
- Although the embodiments of the present invention have been described in detail, it is to be understood that the various change, substitutions, and alterations could be made hereto without departing from the spirit and scope of the invention.
Claims (11)
1. An acoustic wave device comprising:
a piezoelectric film located on a substrate;
a lower electrode and an upper electrode facing each other across the piezoelectric film;
a temperature compensation film located on a surface, which is opposite to the piezoelectric film, of at least one of the lower electrode and the upper electrode and having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric film; and
an additional film located on a surface of the temperature compensation film opposite to the piezoelectric film and having an acoustic impedance greater than an acoustic impedance of the temperature compensation film.
2. The acoustic wave device according to claim 1 , wherein
a mass per unit of an electrode, to which the additional film is provided, out of the lower electrode and the upper electrode is greater than a mass per unit of the additional film.
3. The acoustic wave device according to claim 1 , wherein
the additional film contains a same material as the lower electrode and the upper electrode.
4. The acoustic wave device according to claim 3 , wherein
an electrode, to which the additional film is provided, out of the lower electrode and the upper electrode has a thickness greater than a thickness of the additional film.
5. The acoustic wave device according to claim 1 , wherein
the additional film is made of an insulating material.
6. The acoustic wave device according to claim 1 , wherein
the temperature compensation film and the additional film are located so as to cover a resonance region in which the lower electrode and the upper electrode face each other.
7. The acoustic wave device according to claim 6 , wherein
the temperature compensation film is located on a surface of the lower electrode opposite to the piezoelectric film, and extends from the resonance region so as to cover a lower surface of the piezoelectric film.
8. The acoustic wave device according to claim 1 , wherein
the temperature compensation film is an insulating film mainly containing silicon oxide, silicon nitride, or germanium oxide.
9. The acoustic wave device according to claim 1 , wherein
the piezoelectric film mainly contains aluminum nitride.
10. The acoustic wave device according to claim 1 , wherein
an air-space is located below the lower electrode in a resonance region where the lower electrode and the upper electrode face each other.
11. The acoustic wave device according to claim 1 , wherein
an acoustic reflection film reflecting an acoustic wave propagating through the piezoelectric film is located below the lower electrode in a resonance region where the lower electrode and the upper electrode face each other.
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JP7385996B2 (en) * | 2019-02-28 | 2023-11-24 | 太陽誘電株式会社 | Piezoelectric thin film resonators, filters and multiplexers |
CN110708035B (en) * | 2019-10-21 | 2022-04-01 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
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US10903817B2 (en) * | 2018-05-17 | 2021-01-26 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator and method of manufacturing the same |
US20210058055A1 (en) * | 2019-08-19 | 2021-02-25 | Wisol Co., Ltd. | Air-gap type film bulk acoustic resonator |
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Also Published As
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CN104242862B (en) | 2018-05-01 |
JP6185292B2 (en) | 2017-08-23 |
CN104242862A (en) | 2014-12-24 |
US9929715B2 (en) | 2018-03-27 |
JP2014239392A (en) | 2014-12-18 |
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