US20140043923A1 - Memory Programming Methods and Memory Programming Devices - Google Patents
Memory Programming Methods and Memory Programming Devices Download PDFInfo
- Publication number
- US20140043923A1 US20140043923A1 US14/058,994 US201314058994A US2014043923A1 US 20140043923 A1 US20140043923 A1 US 20140043923A1 US 201314058994 A US201314058994 A US 201314058994A US 2014043923 A1 US2014043923 A1 US 2014043923A1
- Authority
- US
- United States
- Prior art keywords
- memory cell
- substrate
- memory
- programming
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
Abstract
Memory programming devices include a print head that moves across a substrate to deposit memory material on the substrate to form an array of memory cells and programming circuitry coupled to the print head so that the programming circuitry moves across the substrate along with the print head and that, for individual memory cells of the array, is positioned proximate the individual memory cell and writes data to the individual memory cell. Memory programming methods include depositing memory material above a first portion of an electrically conductive bitline printed on a substrate to form a memory cell and using programming circuitry positioned proximate the memory cell, storing data in the memory cell by altering a characteristic of the memory cell, the characteristic remaining altered after the programming circuitry is moved away from the memory cell.
Description
- This application is related to and entirely incorporates by reference U.S. patent application Ser. No. 13/081,434 filed Apr. 6, 2011, now U.S. Pat. No. 8,469,280 issued Jun. 25, 2013; U.S. patent application Ser. No. 13/082,367 filed Apr. 7, 2011, now U.S. Pat. No. 8,523,071 issued Sep. 3, 2013; and U.S. patent application Ser. No. 13/082,380 filed Apr. 7, 2011, now U.S. Pat. No. 8,469,271 issued Jun. 25, 2013. This application is a Continuation of U.S. patent application Ser. No. 13/080,830 filed Apr. 6, 2011, which is a Continuation-In-Part of U.S. patent application Ser. No. 12/604,300 filed Oct. 22, 2009, now U.S. Pat. No. 8,047,443 issued Nov. 1, 2011, which claims benefit of U.S. Provisional Patent Application Ser. No. 61/321,801 filed Apr. 7, 2010, the entirety of each of which is incorporated by reference herein.
- The present disclosure, in various embodiments, relates to memory programming methods and memory programming devices.
- It is now possible to create electronic memory capable of storing electronic data by printing electrically active ink on various substrates, such as paper, using standard printing technology, such as inkjet, flexographic, rotogravure, and screen printing.
- Preferred embodiments of the disclosure are described below with reference to the following accompanying drawings.
-
FIG. 1 illustrates a cross sectional view of a memory cell on a substrate and a memory programming device in accordance with an embodiment. -
FIG. 2 illustrates a cross sectional view of a memory cell on a substrate in accordance with an embodiment. -
FIG. 3 illustrates a top view of an array of memory cells in accordance with an embodiment. -
FIG. 4 illustrates a piece of paper comprising an array of memory cells and a data interface in accordance with an embodiment. - Described herein are methods of programming printed memory with desired electronic data (e.g., music, a picture, a brochure, etc.) during the printing process, such that upon curing, the printed memory contains the desired electronic data.
- Printed memory can take various forms. In one implementation, a material having specific electrical properties is layered between conductive traces such that a memory cell storing one bit of information is formed at each trace intersection. The conductive traces and the material are printed onto a substrate, for example a paper substrate. This memory may or may not be reprogrammable depending on the materials used in the memory cell. Other memory can be formed by simply creating a pattern of short circuits between a positive voltage and ground. Each short to ground may be considered one data value (e.g., a zero), and each short to the positive voltage may be considered another data value (e.g., a one). This memory would typically not be reprogrammable.
- According to one embodiment of a method, a print head deposits a first material at the intersection of a pair of conductive traces if the intersection is to represent a digital zero and deposits a different second material at the intersection if the intersection is to represent a digital one. The electrical phenomenon measured to “read” the memory may differ depending on the properties of the first and second materials. The first and second materials may be conductive, magnetic, capacitive, resistive, inductive, or some combination of these various phenomena. Example materials include magnetic ink and ferromagnetic liquid.
- In another embodiment of the invention, each memory cell may be programmed with a bit value during the deposition of a material (which may be in the form of an ink) at the intersection of a pair of traces that forms the memory cell by applying an electric field and/or magnetic field to the material as or after the material is printed onto the substrate (e.g., paper substrate) and/or while the material is curing (e.g., drying). For example, a print head used to deposit the material on the substrate may include programming circuitry that can selectively program an individual memory cell by applying an electric and/or magnetic field that orients magnetic portions of the material in a particular way. The print head may be configured to program the bit to be a digital zero by orienting the magnetic portions of the material in a first direction. Similarly, the print head may be configured to program the bit to be a digital one by orienting the magnetic portions of the material in a second direction different from the first direction, for example, a direction opposite that of the first direction. Alternatively, the print head may be configured to program the bit to be a digital zero by changing a resistance of the material to a relatively high-resistance state and may be configured to program the bit to be a digital one by changing the resistance of the material to a relatively low-resistance state in relation to the high resistance state.
- Other techniques may also be used. For example, the print head may be configured to program the bit to be a digital zero by storing a relatively large amount of charge in the material and may be configured to program the bit to be a digital one by storing a relatively small amount of charge in the material.
- Although a bit may be programmed at the time of printing to be a digital zero, it may later be reprogrammed to be a digital one by using the programming circuitry of the print head (or other programming circuitry of a programming device not associated with a print head) to apply an electric and/or magnetic field to the material of the memory cell. In one embodiment, the programming circuitry may be positioned proximate the memory cell to be programmed so that the electric and/or magnetic field produced by the programming circuitry intersects the material of the memory cell. While applying the electric and/or magnetic field to the memory cell, other memory cells adjacent the memory cell might not be affected by the electric and/or magnetic field. As a result, the memory cell may be re-programmed by the electric and/or magnetic field but other memory cells adjacent the memory cell are not re-programmed by the electric and/or magnetic field.
- In yet another embodiment of the invention, multiple memory cells of an array of memory cells may be programmed in parallel (e.g., substantially simultaneously), as or shortly after they are printed on the substrate, by a suitably configured, one-dimensional or two-dimensional array of electrical, magnetic, or electro-magnetic fields positioned proximate to the memory cells so that individual of the fields are aligned with individual memory cells. The fields could add or remove charge to individual memory cells, or flip magnetic domains in individual memory cells, change resistance of the memory cells, or a combination of the above, to accomplish the arbitrary configuration of the memory array with the data desired.
- In yet another embodiment of the invention, careful controlling the environment during printing and curing may be used to induce the various memory cells to assume arbitrary values of zero or one once cured. In this embodiment, various combinations of external influences such as magnetic fields, electric fields, vacuum, pressure, gasses of various sorts, and light may also be brought to bear to create the desired outcome. The external influences may affect the amount of charge stored by a memory cell, the resistance of the memory cell, the conductivity of the memory cell, the orientation of magnetic material of the memory cell, or other characteristics of the memory cell. In one embodiment, memory cells programmed in this manner may be one-time programmable rather than reprogrammable.
- In another embodiment of the invention, each memory cell may be programmed with a bit value during the deposition of a material (which may be in the form of an ink) at the intersection of a pair of traces that forms the memory cell by applying an light beam (e.g., from a laser) to the material as or after the material is printed onto the substrate (e.g., paper substrate) and/or while the material is curing (e.g., drying). For example, a print head used to deposit the material on the substrate may include programming circuitry that can selectively program an individual memory cell by applying light that changes a characteristic (e.g., amount of charge stored, resistance, orientation of magnetic poles of portions of the material, etc.) of the material in a particular way.
- In yet another embodiment, multiple memory cells of an array of memory cells may be programmed in parallel (e.g., substantially simultaneously) while the array is being printed by a suitably configured, one-dimensional or two-dimensional array of light beams positioned in proximity to the multiple memory cells. In this case, the individual light beams may be aligned with individual memory cells.
- Referring to
FIG. 1 , a cross sectional view of amemory cell construction 10 is illustrated according to one embodiment. An electricallyconductive bitline 14 is formed on asubstrate 12.Bitline 14 may extend horizontally and may be shared with other memory cells not illustrated inFIG. 1 . -
Substrate 12 may comprise paper andbitline 14 may be formed onsubstrate 12 by printing electrically conductive ink onsubstrate 12. In formingbitline 14, an electrically conductive ink may be deposited onsubstrate 12 in a desired pattern by a print head. In one embodiment,substrate 12 may be a lamination of several layers of paper and adhesive. In other embodiments,substrate 12 might not comprise paper, but may comprise plastic, Mylar, or other flexible, suitable for printing with ink by a printer. - In one embodiment, an electrically
insulative material 20 is printed on top of portions ofbitline 14 andmemory cell 22 is printed on top of portions ofbitline 14. In one embodiment,memory cell 22 is printed before insulativematerial 20. In other embodiments,insulative material 20 is printed beforememory cell 22. Inprinting memory cell 22, memory material, such as the memory materials described herein, may be deposited onsubstrate 12 in a desired pattern by a print head. - An electrically
conductive wordline 18 is printed abovememory cell 22 using electrically conductive ink.Wordline 18 may extend into and out of the page in a direction orthogonal to the direction that bitline 14 extends. In formingwordline 18, an electrically conductive ink may be deposited onsubstrate 12 in a desired pattern byprint head 26. - In the embodiment illustrated in
FIG. 1 ,wordline 18 andbitline 14 may both be in direct physical contact withmemory cell 22 and may both be ohmically connected tomemory cell 22.Memory cell 22 may store data and may be programmed using one or more of the methods described herein. - Also illustrated in
FIG. 1 ismemory programming device 16 which includesprogramming circuitry 24 andprint head 26.Memory programming device 16 is positionedproximate memory cell 22 and is configured to alter a characteristic ofmemory cell 22. For example, in one embodiment,programming circuitry 24 may include a coil or other circuitry configured to generate a magnetic field directed downward that intersectsmemory cell 22.Print head 26 is configured to deposit ink or other materials onsubstrate 12.Programming circuitry 24 andprint head 26 may be moved relative tosubstrate 12.Programming circuitry 24 andprint head 26 are represented as functional blocks inFIG. 1 . - Referring to
FIG. 2 , a cross sectional view of another embodiment of amemory cell construction 11 is illustrated according to one embodiment.Construction 11 is similar toconstruction 10, except thatinsulative material 20 is printed betweenbitline 14 andmemory cell 22 and betweenmemory cell 22 andwordline 18. In this embodiment,bitline 14 andwordline 18 are not ohmically connected tomemory cell 22. However, a current may still be induced inbitline 14 as a result of a voltage or current present inwordline 18 depending on the programmed state ofmemory cell 22. - Referring to
FIG. 3 , a top view of anarray 30 ofmemory cells 22 formed onsubstrate 12 is illustrated according to one embodiment. Thearray 30 includes a plurality ofbitlines 14 extending in a direction perpendicular to an array ofwordlines 18. Memory cells 22 (22 a, 22 b, 22 c, 22 d, 22 e, 22 f, 22 g, 22 h, and 22 i) are formed at the intersections ofbitlines 14 andwordlines 18. When storing data in amemory cell 22 ofarray 30, programming circuitry may direct a field or light beam in a target area 32. - For example, to store data in
memory cell 22 e, programming circuitry may direct a magnetic field intarget area 32 e. In doing so, the magnetic field may be configured so that portions of the magnetic field that intersecttarget areas memory cells - Referring to
FIG. 4 , a laminated piece ofpaper 40 is illustrated which comprisesmemory array 30, as well as connectingcircuitry 44 anddata interface 42. Laminatedpaper 40 may include two layers of paper. A first layer of paper on whicharray 30 is printed and a second layer ofpaper covering array 30. The first and second layers of paper may be laminated together so as to makearray 30 inaccessible. - Connecting
circuitry 44 may be printed on the first layer of paper anddata interface 42 may be printed on the second layer of paper and may be electrically connected to connectingcircuitry 44. In one embodiment,data interface 42 may be a Universal Serial Bus (USB) interface suitable for connecting to a computer or other data communication device. The computer or other data communication device may send data tomemory array 30 viadata interface 42. In some embodiments,paper 40 may be folded, cut, or otherwise modified so that data interface 42 fits within a standard USB receptacle. - In one embodiment,
data interface 42 may more broadly comprise connectingcircuitry 44 as well as a circuitry printed on the first layer, such as buffers. In this embodiment,data interface 42 may be configured to receive data from the computer or other data communication device and buffer the received data prior to the data being written tomemory array 30. For example,data interface 42 may be a USB interface configured to receive data via a USB protocol and to buffer the data prior to the data being written tomemory array 30. - According to one embodiment, memory programming methods include depositing memory material (e.g., the material of memory cell 22) above a first portion of an electrically conductive bitline (e.g., bitline 14) printed on a substrate (e.g. substrate 12) to form a memory cell (e.g., memory cell 22) and using programming circuitry positioned proximate the memory cell, storing data in the memory cell by altering a characteristic of the memory cell, the characteristic remaining altered after the programming circuitry is moved away from the memory cell.
- In one embodiment, the substrate may comprise paper, and the memory material may be magnetic ink. The depositing of the memory material may include depositing the memory material with an ink jet print head. In one embodiment, the method may include forming the wordline before storing the data. For example,
memory cell 22 ofFIG. 1 may be programmed before wordline 18 is printed. Alternatively, the method may include forming (e.g., printing)wordline 18 after storing the data inmemory cell 22. - The programming circuitry may be free of physical contact with the memory cell during the altering of the characteristic. For example,
programming circuitry 24 may be positioned abovememory cell 22 and may be spaced frommemory cell 22 as illustrated inFIG. 1 . However, the programming circuitry may be positioned proximate the memory cell so that a field (e.g., electric and/or magnetic field) or light beam (e.g., laser beam) generated by the programming circuitry may intersect the memory cell. Accordingly, the programming circuitry may be free of ohmic contact with the memory cell during the altering of the characteristic. Further, in one embodiment, the programming circuitry may be in physical contact with the memory cells, for example, when the memory material is deposited on the substrate, but might not be in ohmic contact with the memory cell. - The altering of the characteristic of the memory cell may include altering the characteristic while at least a portion of the memory cell is in a liquid state (e.g., before the memory material of
FIG. 1 cures to form memory cell 22). Alternatively, the altering may take place after the memory material has cured. One or more of several different characteristics may be altered to store the data. For example, the characteristic may be one or more of the following characteristics: a magnetic orientation of the memory cell, an electrical resistance of the memory cell, an electrical inductance of the memory cell, or an electrical capacitance of the memory cell. Alternatively, the characteristic altered may be some other physical phenomenon of the memory material. - The characteristic may be altered in one or more of a number of different ways. The altering of the characteristic may include the programming circuitry applying an electric field, a magnetic field, and/or an electromagnetic field to the memory cell. Alternatively or additionally, the altering of the characteristic may include the programming circuitry changing an amount of electrical charge stored by the memory cell, for example by increasing the amount of electrical charge stored by the memory cell or decreasing the amount of electrical charge stored by the memory cell.
- In one embodiment, the altering of the characteristic may include the programming circuitry applying a magnetic field to the memory cell. The magnetic field may orient magnetic poles of the memory cell in a direction. The application of the magnetic field to the memory cell by the programming circuitry may then be ceased, but the magnetic poles of the memory cell may retain the orientation despite the ceasing of the application of the magnetic field. Accordingly, the memory cell may be described as being non-volatile since it retains the data by way of the orientation of the magnetic poles of the memory cell even when the magnetic field is not present.
- Alternatively or additionally, the storing of the data may include exposing the memory cell to a laser beam while the memory material is curing. In this case,
programming circuitry 24 may comprise a laser. - The programming methods may further include forming a wordline above the memory cell. The wordline may cross the first portion of the bitline. After the programming circuitry stores the data in the memory cell, the wordline and the bitline may be used to alter the data stored in the memory cell without the use of the programming circuitry. For example, a voltage may be imposed across the wordline and the bitline and a value of the data stored in the memory cell may be determined based on a current carried by the bitline, the current resulting from the voltage imposed across the wordline and bitline.
- According to one embodiment, a memory programming device (e.g., memory programming device 16) includes a print head (e.g., print head 26) that moves across a substrate to deposit memory material on the substrate to form an array of memory cells and programming circuitry (e.g., programming circuitry 24) coupled to the print head so that the programming circuitry moves across the substrate along with the print head. For each individual memory cell of the array, the programming circuitry is positioned proximate the individual memory cell and writes data to the individual memory cell.
- Other memory programming devices may alternatively be used to
program array 30 in which the programming circuitry moves across the substrate independent of the print head such that the print head and programming circuitry are decoupled. - As was mentioned above, the programming circuitry may write data to the individual memory cell by altering a characteristic of the memory cell, the characteristic remaining altered after the programming circuitry is moved away from the individual memory cell.
- The print head may form a first memory cell of the array (e.g.,
memory cell 22 e) and the programming circuitry may write data to the first memory cell of the array prior to the print head forming a second memory cell (e.g.,memory cell 22 i) of the array. In this embodiment, the print head might not form wordlines 18 until after the programming circuitry has written data to the memory cells of the array. - In one embodiment, the programming circuitry may write the data to the memory cells by controlling the print head to deposit a first memory material in memory cells of the array storing a first binary value (e.g., a zero) and to deposit a second memory material in memory cells of the array storing a second binary value (e.g., a one) different from the first binary value. The first memory material may have an electrical characteristic that is different from an electrical characteristic of the second memory material. For example, the first memory material may have a greater electrical resistance than the second memory material.
- The programming circuitry may write data to the individual memory cell (e.g.,
memory cell 22 e) by applying an electric and/or magnetic field to the individual memory cell and the memory programming device may prevent the field from altering data written to other memory cells of the array (e.g.,memory cells memory cell 22 e). In one embodiment, the memory programming device may prevent the field from altering the data written to other memory cells of the array by positioning the programming circuitry closer to the individual memory cell than any other memory cell of the array. - For example, the programming circuitry may be configured to emit a very narrow, directional magnetic field that is positioned so as to intersect one memory cell of the array (e.g.,
memory cell 22 e throughtarget area 32 e), but is sufficiently directional and narrow that other memory cells of the array (e.g.,memory cells - According to another embodiment, a memory programming method includes moving a print head across a substrate to deposit conductive ink on the substrate to form an array of bitlines intersecting an array of wordlines. The method also includes moving a print head across a substrate to deposit memory material to form an array of memory cells, the memory cells being located at the intersections of the bitlines and wordlines. The method further includes iteratively positioning programming circuitry in a plurality of different locations relative to the substrate and in each of the locations of the plurality, using the programming circuitry to write data to a different subset of the memory cells of the array. In one embodiment, each of the subsets of the memory cells may consist of a single memory cell of the array. In other embodiments, each of the subsets of memory cells may comprise a plurality of the memory cells of the array.
- The programming circuitry may write data to a first memory cell of the array by orienting magnetic poles of the first memory cell in a first direction and may write a second memory cell of the array by orienting magnetic poles of the second memory cell in a direction opposite the first direction.
- The data written by the programming circuitry may be referred to as first data and the memory programming method may further include forming a data interface (e.g., data interface 42) on the substrate, for example, a USB interface. The data interface may be configured to receive second data from a data source distinct from the substrate, to buffer the received second data, and to store the buffered second data in the memory cells independent of the programming circuitry by applying voltages and/or currents to the wordlines and bitlines. In one embodiment, the data source may be a computer or other device configured to send and/or receive data.
- The data interface may provide a way to program the memory cells that is distinct from the programming circuitry. In one embodiment, the programming circuitry may program the memory cells of the array as the memory cells are printed on a substrate and before the data interface is ever formed or used. Once the memory array has been fully formed, the data interface may be used to alter the data that the programming circuitry previously stored in the memory cells.
- Accordingly, the programming circuitry may write the first data to the memory cells (e.g., memory cells 22) prior to the forming of the data interface (e.g., data interface 42). The programming circuitry may write the first data to the memory cells prior to the data interface receiving any data from the data source. The programming circuitry may write the first data to the memory cells independent of the data interface. The programming circuitry may write the first data to the memory cells prior to the first time that the data interface is ever used to receive and buffer data from any data source.
- By way of clarification, it should be noted that the data that the programming circuitry writes to the memory cells may include an arbitrary mixture of binary values, rather than all zeros, all ones, or some other predetermined pattern of zeroes and ones. In one embodiment, the data that the programming circuitry writes to the memory cells may be data of an image, video, document, database, email, etc.
- The invention would be typically exercised by (1) applying the various requisite inks in layers onto a substrate (paper, or Mylar film for example), and (2) by controlling the environment and/or bringing the requisite external influences to bear during and/or shortly after printing and/or during curing, such that the finished memory is not blank but contains the desired data.
- By way of example, the methods described herein may be used to program devices such as the devices described in U.S. patent application Ser. No. 12/604,300.
Claims (18)
1. A memory programming device comprising:
a print head that moves across a substrate to deposit memory material on the substrate to form an array of memory cells; and
programming circuitry coupled to the print head so that the programming circuitry moves across the substrate along with the print head and that, for individual memory cells of the array, is positioned proximate the individual memory cell and writes data to the individual memory cell.
2. The device of claim 1 wherein the programming circuitry writes data to the individual memory cell by altering a characteristic of the memory cell, the characteristic remaining altered after the programming circuitry is moved away from the individual memory cell.
3. The device of claim 1 wherein the print head forms a first memory cell of the array and the programming circuitry writes data to the first memory cell of the array prior to the print head forming a second memory cell of the array.
4. The device of claim 1 wherein the programming circuitry writes the data to the memory cells by controlling the print head to deposit a first memory material in memory cells of the array storing a first binary value and to deposit a second memory material in memory cells of the array storing a second binary value different from the first binary value, the first memory material having an electrical characteristic that is different from an electrical characteristic of the second memory material.
5. The device of claim 1 wherein the programming circuitry writes data to the individual memory cell by applying an electric and/or magnetic field to the individual memory cell and the memory programming device prevents the field from altering data written to other memory cells of the array while the programming circuitry is writing data to the individual memory cell.
6. The device of claim 5 wherein the memory programming device prevents the field from altering the data written to other memory cells of the array by positioning the programming circuitry closer to the individual memory cell than any other memory cell of the array.
7. A programming device comprising:
a structure comprising a receiving area configured to receive at least a portion of a substrate in a preset position;
communication circuitry in the structure and configured to receive and transmit data; and
a first set of one or more electrical contacts connected to the communication circuitry and configured to physically contact a corresponding second set of one or more electrical contacts located on the portion of the substrate when the substrate is in the preset position.
8. The device of claim 7 further comprising an indicator configured to indicate that the first and second sets of the one or more electrical contacts are in physical contact.
9. The device of claim 7 further comprising:
a detection device configured for detecting a current position of the substrate relative the preset position; and
an adjustment device configured to reposition the substrate from the current position to the preset position.
10. The device of claim 7 further comprising a biasing structure secured in the structure and configured to force the substrate toward the first set of the one or more electrical contacts.
11. The device of claim 7 wherein the first set of the one or more electrical contacts are movably biased to contact the substrate.
12. The device of claim 7 wherein the communication circuitry comprises circuitry implementing wireless communication.
13. The device of claim 7 wherein the communication circuitry comprises circuitry implementing USB protocols.
14. A programming method comprising:
providing at least one substrate to be programmed, the substrate comprising communication circuitry;
interfacing the communication circuitry with a data storage device comprising program data; and
transmitting the program data via the communication circuitry to the at least substrate.
15. The method of claim 14 wherein:
the data storage device comprises a computer; and
the interfacing comprises providing a structure comprising a set of one or more electrical contacts electrically coupled to the communication circuitry of the substrate.
16. The method of claim 14 wherein:
the at least one substrate comprises a plurality of substrates; and
the transmitting comprises transmitting the program data simultaneously to the plurality of substrates.
17. The method of claim 14 wherein:
the at least one substrate comprises a plurality of substrates; and
the transmitting comprises transmitting the program data serially to the plurality of substrates.
18. The method of claim 14 further comprising verifying the program data transmitted matches the program data stored on the data storage device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/058,994 US20140043923A1 (en) | 2009-10-22 | 2013-10-21 | Memory Programming Methods and Memory Programming Devices |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/604,300 US8047443B2 (en) | 2008-10-23 | 2009-10-22 | Data storage devices |
US32180110P | 2010-04-07 | 2010-04-07 | |
US13/080,830 US8561910B2 (en) | 2009-10-22 | 2011-04-06 | Memory programming methods and memory programming devices |
US14/058,994 US20140043923A1 (en) | 2009-10-22 | 2013-10-21 | Memory Programming Methods and Memory Programming Devices |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/080,830 Continuation US8561910B2 (en) | 2009-10-22 | 2011-04-06 | Memory programming methods and memory programming devices |
Publications (1)
Publication Number | Publication Date |
---|---|
US20140043923A1 true US20140043923A1 (en) | 2014-02-13 |
Family
ID=44763527
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/080,830 Expired - Fee Related US8561910B2 (en) | 2009-10-22 | 2011-04-06 | Memory programming methods and memory programming devices |
US14/058,994 Abandoned US20140043923A1 (en) | 2009-10-22 | 2013-10-21 | Memory Programming Methods and Memory Programming Devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/080,830 Expired - Fee Related US8561910B2 (en) | 2009-10-22 | 2011-04-06 | Memory programming methods and memory programming devices |
Country Status (2)
Country | Link |
---|---|
US (2) | US8561910B2 (en) |
WO (1) | WO2011127183A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8228701B2 (en) | 2009-03-01 | 2012-07-24 | Apple Inc. | Selective activation of programming schemes in analog memory cell arrays |
NZ779667A (en) | 2019-02-06 | 2023-06-30 | Hewlett Packard Development Co | Communicating print component |
US11787173B2 (en) | 2019-02-06 | 2023-10-17 | Hewlett-Packard Development Company, L.P. | Print component with memory circuit |
US11453212B2 (en) | 2019-02-06 | 2022-09-27 | Hewlett-Packard Development Company, L.P. | Print component with memory circuit |
PL3717253T3 (en) | 2019-02-06 | 2022-08-01 | Hewlett-Packard Development Company, L.P. | Memories of fluidic dies |
EP3845386B1 (en) | 2019-02-06 | 2024-04-03 | Hewlett-Packard Development Company, L.P. | Multiple circuits coupled to an interface |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060180674A1 (en) * | 2005-02-14 | 2006-08-17 | Aladdin Knowledge Systems Ltd. | Security card apparatus |
US20060190918A1 (en) * | 2005-01-14 | 2006-08-24 | Cabot Corporation | System and process for manufacturing custom electronics by combining traditional electronics with printable electronics |
US20070251997A1 (en) * | 2006-04-28 | 2007-11-01 | Research In Motion Limited | System and method for managing multiple smart card sessions |
US20070284445A1 (en) * | 2006-06-09 | 2007-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Universal card reader |
Family Cites Families (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD267009S (en) | 1979-04-12 | 1982-11-23 | Sharp Corporation | Magnetic card for microwave oven |
JPS625363U (en) | 1985-03-25 | 1987-01-13 | ||
JPH0696356B2 (en) | 1986-03-17 | 1994-11-30 | 三菱電機株式会社 | Thin semiconductor card |
JPH0821672B2 (en) | 1987-07-04 | 1996-03-04 | 株式会社堀場製作所 | Method for producing sheet-type electrode for measuring ion concentration |
USD320225S (en) | 1989-08-11 | 1991-09-24 | Casio Computer Co., Ltd. | Memory card for electronic calculator |
DE4403513A1 (en) | 1994-02-04 | 1995-08-10 | Giesecke & Devrient Gmbh | Chip card with an electronic module and method for producing such a chip card |
DE19601358C2 (en) | 1995-01-20 | 2000-01-27 | Fraunhofer Ges Forschung | Integrated circuit paper |
US5818030A (en) | 1995-03-07 | 1998-10-06 | Reyes; Rene A. | Credit card system with key module |
JP3519491B2 (en) | 1995-03-31 | 2004-04-12 | 株式会社東海理化電機製作所 | IC card |
DE29518707U1 (en) | 1995-11-25 | 1996-01-18 | Stocko Metallwarenfab Henkels | Contact unit for card-shaped carrier elements of electronic assemblies |
JP3173438B2 (en) | 1997-06-04 | 2001-06-04 | ソニー株式会社 | Memory card and mounting device |
EP0905657B1 (en) | 1997-09-23 | 2003-05-28 | STMicroelectronics S.r.l. | Currency note comprising an integrated circuit |
JPH11144450A (en) | 1997-11-10 | 1999-05-28 | Fujitsu Takamisawa Component Ltd | Memory card |
USD447481S1 (en) | 1998-04-01 | 2001-09-04 | Sandisk Corporation | Memory card for use with portable electronic devices |
US7269004B1 (en) | 2005-04-21 | 2007-09-11 | Super Talent Electronics, Inc. | Low-profile USB device |
WO2001015072A1 (en) | 1999-08-24 | 2001-03-01 | Matsushita Electric Industrial Co., Ltd. | Memory card |
US7213764B2 (en) | 2002-11-07 | 2007-05-08 | American Express Travel Related Services Company, Inc. | Foldable transaction card |
JP4190111B2 (en) | 1999-10-29 | 2008-12-03 | 富士通株式会社 | High frequency module |
DE10006848C1 (en) | 2000-02-16 | 2001-06-21 | Itt Mfg Enterprises Inc | Plug-in circuit card for electronic device has flat rectangular housing enclosing circuit board assembled from parts which are snap-fitted together |
JP2001244016A (en) | 2000-02-29 | 2001-09-07 | Fujitsu Takamisawa Component Ltd | Card peripheral device |
CN1260677C (en) | 2000-04-18 | 2006-06-21 | 松下电器产业株式会社 | Memory card installer |
US6824066B2 (en) | 2000-10-06 | 2004-11-30 | Leon H. Weyant | Electronic access security key card pamphlet |
USD458935S1 (en) | 2001-02-16 | 2002-06-18 | Kabushiki Kaisha Toshiba | Communications card |
US7352199B2 (en) | 2001-02-20 | 2008-04-01 | Sandisk Corporation | Memory card with enhanced testability and methods of making and using the same |
EP1788512A1 (en) | 2001-04-02 | 2007-05-23 | Hitachi, Ltd. | A semiconductor device and a method of manufacturing the same |
US6943773B2 (en) | 2001-05-11 | 2005-09-13 | Palmone, Inc. | Page flicking mechanism for electronic display devices that paginate content |
JP4297633B2 (en) | 2001-07-12 | 2009-07-15 | アルプス電気株式会社 | Card connector device |
TW545653U (en) | 2001-10-30 | 2003-08-01 | Carry Computer Eng Co Ltd | Improved mechanism of electronic signal adapting module for silicon disk |
US6744634B2 (en) | 2001-11-23 | 2004-06-01 | Power Quotient International Co., Ltd. | Low height USB interface connecting device and a memory storage apparatus thereof |
FR2833736B1 (en) | 2001-12-18 | 2004-05-14 | Gemplus Card Int | CHIP CARD TYPE CARD |
JP3861121B2 (en) | 2002-01-18 | 2006-12-20 | 日本圧着端子製造株式会社 | Card connector |
JP4351826B2 (en) | 2002-01-23 | 2009-10-28 | アルプス電気株式会社 | Card connector device |
TW582618U (en) | 2002-02-06 | 2004-04-01 | Carry Computer Eng Co Ltd | Silicon disc card with USB plug |
JP3850812B2 (en) | 2003-05-23 | 2006-11-29 | 三和電気工業株式会社 | Memory card adapter |
US6783060B2 (en) | 2002-05-02 | 2004-08-31 | International Business Machines Corporation | Smart business card system |
USD490814S1 (en) | 2002-06-24 | 2004-06-01 | Jungsoft Co., Ltd. | USB based portable storage device |
US6994263B2 (en) | 2002-06-28 | 2006-02-07 | Matsushita Electric Industrial Co., Ltd. | IC card |
US6865086B2 (en) | 2002-07-09 | 2005-03-08 | Micron Technology, Inc. | Apparatus and method to secure an adaptor to a reduced-sized memory card |
US6665201B1 (en) | 2002-07-24 | 2003-12-16 | Hewlett-Packard Development Company, L.P. | Direct connect solid-state storage device |
US20040087213A1 (en) | 2002-08-16 | 2004-05-06 | Chi-Lei Kao | Plug used for connection with a usb receptacle |
US7083107B2 (en) | 2002-09-30 | 2006-08-01 | Matsushita Electric Industrial Co., Ltd. | Memory card |
JP4236440B2 (en) | 2002-10-09 | 2009-03-11 | 株式会社ルネサステクノロジ | IC card |
US7367503B2 (en) | 2002-11-13 | 2008-05-06 | Sandisk Corporation | Universal non-volatile memory card used with various different standard cards containing a memory controller |
USD487458S1 (en) | 2002-11-22 | 2004-03-09 | Gregoire Alexandre Gentil | Portable electronic storage device |
US7253735B2 (en) | 2003-03-24 | 2007-08-07 | Alien Technology Corporation | RFID tags and processes for producing RFID tags |
US7102891B1 (en) | 2003-07-23 | 2006-09-05 | Amkor Technology, Inc. | Circuit module having interconnects for connecting functioning and non-functioning add ons and method therefor |
US7004794B2 (en) | 2003-09-11 | 2006-02-28 | Super Talent Electronics, Inc. | Low-profile USB connector without metal case |
US7721956B2 (en) | 2003-12-10 | 2010-05-25 | American Express Travel Related Services Company, Inc. | Foldable transaction card systems |
US6908038B1 (en) | 2004-02-27 | 2005-06-21 | Imotion Corp. | Multi-connector memory card with retractable sheath to protect the connectors |
US20060288169A1 (en) | 2004-03-11 | 2006-12-21 | Bertram Steiner | Lighter apparatus with data storage capabilities and a data transfer interface |
USD531181S1 (en) | 2004-04-16 | 2006-10-31 | Sandisk Corporation | Combined memory card and carrier assembly |
US7152801B2 (en) | 2004-04-16 | 2006-12-26 | Sandisk Corporation | Memory cards having two standard sets of contacts |
US7487265B2 (en) | 2004-04-16 | 2009-02-03 | Sandisk Corporation | Memory card with two standard sets of contacts and a hinged contact covering mechanism |
EP1779473B1 (en) | 2004-06-17 | 2012-08-08 | Walletex Microelectronics LTD. | Improved connector and device for flexibly connectable computer systems |
TWI257583B (en) | 2004-07-28 | 2006-07-01 | C One Technology Corp | Expandable reduced-size memory card and corresponding extended memory card |
US7040919B2 (en) | 2004-08-18 | 2006-05-09 | Li-Ho Yao | USB plug with two sides alternately connectable to a USB port |
EP1812893A4 (en) * | 2004-10-18 | 2008-12-10 | Semiconductor Energy Lab | Semiconductor device and driving method of the same |
US20060098485A1 (en) * | 2004-10-29 | 2006-05-11 | Agfa-Gevaert | Printable non-volatile passive memory element and method of making thereof |
US20060118639A1 (en) | 2004-12-06 | 2006-06-08 | First Data Corporation | Punchout contactless transaction card |
USD518483S1 (en) | 2004-12-30 | 2006-04-04 | C-One Technology Corporation | Mixed interface integrated circuit card |
US7381076B2 (en) | 2005-01-10 | 2008-06-03 | Sandisk Il Ltd. | Thin peripheral for mating with thicker connector |
US7392358B2 (en) | 2005-01-14 | 2008-06-24 | Sandisk Corporation | Delivery of a message to a user of a portable data storage device as a condition of its use |
JP2006209497A (en) | 2005-01-28 | 2006-08-10 | Seiko Epson Corp | Rfid tag, print sheet, printer device and rfid system |
US20060255158A1 (en) | 2005-05-10 | 2006-11-16 | Yanki Margalit | Security card apparatus |
USD565572S1 (en) | 2005-02-22 | 2008-04-01 | Power Quotient International Co., Ltd. | Digital multimedia memory card |
JP2006304184A (en) | 2005-04-25 | 2006-11-02 | Lintec Corp | Antenna circuit, ic inlet, ic tag, ic card, manufacturing method of ic tag and ic card |
WO2006120309A2 (en) | 2005-05-11 | 2006-11-16 | Stmicroelectronics Sa | Silicon chips provided with inclined contact pads and an electronic module comprising said silicon chip |
US7377448B2 (en) | 2005-06-01 | 2008-05-27 | Sandisk Il Ltd | Card device for connection to a USB receptacle |
US7334725B2 (en) | 2005-06-01 | 2008-02-26 | San Disk Il Ltd. | Flash memory device within a business card |
US7218528B2 (en) | 2005-06-21 | 2007-05-15 | Power Digital Card Co., Ltd. | Dual connecting interface memory card |
US20070028046A1 (en) | 2005-07-28 | 2007-02-01 | Xerox Corporation | Flash device to external storage adapter |
USD542797S1 (en) | 2005-08-02 | 2007-05-15 | Sandisk Corporation | Memory card with a contact covering lid |
TWM286969U (en) | 2005-10-18 | 2006-02-01 | Datafab Sys Inc | Card reader of memory card type |
EP1798732A1 (en) | 2005-12-15 | 2007-06-20 | Agfa-Gevaert | Ferroelectric passive memory cell, device and method of manufacture thereof. |
US8061623B2 (en) | 2006-02-09 | 2011-11-22 | Vadim Evgenevich Balchaytis | Plastic card provided with electrical contacts |
USD545311S1 (en) | 2006-03-29 | 2007-06-26 | Eric Beare Associates Ltd. | USB flash memory |
US7344072B2 (en) | 2006-04-27 | 2008-03-18 | Sandisk Corporation | Credit card sized USB flash drive |
US20080109309A1 (en) | 2006-10-31 | 2008-05-08 | Steven Landau | Powered Print Advertisements, Product Packaging, and Trading Cards |
USD553130S1 (en) | 2006-12-05 | 2007-10-16 | Ultra Products, Inc. | USB flash memory device and carrier |
US7357655B1 (en) | 2006-12-28 | 2008-04-15 | Hon Hai Precision Ind. Co., Ltd. | Electrical card connector |
JP4582106B2 (en) | 2007-03-27 | 2010-11-17 | ブラザー工業株式会社 | Communication device |
JP5015669B2 (en) | 2007-06-20 | 2012-08-29 | 株式会社リコー | Image reading apparatus, image forming apparatus, electronic paper, and program |
US8256677B2 (en) | 2007-07-10 | 2012-09-04 | Inphase Technologies, Inc. | Enabling holographic media backwards compatibility with dual-use media card connector |
TWM336510U (en) | 2007-09-04 | 2008-07-11 | Genesys Logic Inc | Non-volatile memory storage device |
USD591753S1 (en) | 2007-12-03 | 2009-05-05 | Mitsumi Electric Co., Ltd. | Wireless communication card |
USD612385S1 (en) | 2008-02-28 | 2010-03-23 | Olympus Imaging Corp. | Bar code reader |
TWM366106U (en) | 2009-02-04 | 2009-10-01 | Giga Byte Tech Co Ltd | Notebook |
US8274701B2 (en) * | 2009-05-12 | 2012-09-25 | Ricoh Production Print Solutions LLC | High speed printing system for printing magnetic ink |
-
2011
- 2011-04-06 WO PCT/US2011/031432 patent/WO2011127183A2/en active Application Filing
- 2011-04-06 US US13/080,830 patent/US8561910B2/en not_active Expired - Fee Related
-
2013
- 2013-10-21 US US14/058,994 patent/US20140043923A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060190918A1 (en) * | 2005-01-14 | 2006-08-24 | Cabot Corporation | System and process for manufacturing custom electronics by combining traditional electronics with printable electronics |
US20060180674A1 (en) * | 2005-02-14 | 2006-08-17 | Aladdin Knowledge Systems Ltd. | Security card apparatus |
US20070251997A1 (en) * | 2006-04-28 | 2007-11-01 | Research In Motion Limited | System and method for managing multiple smart card sessions |
US20070284445A1 (en) * | 2006-06-09 | 2007-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Universal card reader |
Also Published As
Publication number | Publication date |
---|---|
US20120075941A1 (en) | 2012-03-29 |
WO2011127183A3 (en) | 2012-03-01 |
US8561910B2 (en) | 2013-10-22 |
WO2011127183A2 (en) | 2011-10-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20140043923A1 (en) | Memory Programming Methods and Memory Programming Devices | |
US7764529B2 (en) | Data storage device | |
US6879512B2 (en) | Nonvolatile memory device utilizing spin-valve-type designs and current pulses | |
US7359230B2 (en) | Nonvolatile memory device | |
KR20010022949A (en) | A ferroelectric data processing device | |
JP2003234454A5 (en) | ||
TW200932559A (en) | An inkjet print head with shared data lines | |
US6857054B2 (en) | Write-once memory storage device | |
US7411814B2 (en) | Programmable magnetic memory device FP-MRAM | |
TWI530949B (en) | Memory programming methods and memory programming devices | |
EP3726531A2 (en) | Method and system for writing to and reading from a memory device | |
US8659852B2 (en) | Write-once magentic junction memory array | |
JP6526628B2 (en) | Device equipped with Skillmion memory and Skillmion memory | |
US20040136234A1 (en) | Magnetic storage element, recording method using the same, and magnetic storage device | |
US20060002183A1 (en) | Magnetic memory with structure providing reduced coercivity | |
JP7485532B2 (en) | Method and system for writing to and reading from a memory device - Patents.com | |
US20080278996A1 (en) | Programmable magnetic read only memory (mrom) | |
TW201203281A (en) | Method of addressing an array and data storage devices addressable by such a method | |
JP2004172155A (en) | Magnetic storage element, its recording method, and magnetic storage device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |