US20130193562A1 - Structure and method for topography free soi integration - Google Patents
Structure and method for topography free soi integration Download PDFInfo
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- US20130193562A1 US20130193562A1 US13/827,463 US201313827463A US2013193562A1 US 20130193562 A1 US20130193562 A1 US 20130193562A1 US 201313827463 A US201313827463 A US 201313827463A US 2013193562 A1 US2013193562 A1 US 2013193562A1
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- 238000000034 method Methods 0.000 title description 23
- 230000010354 integration Effects 0.000 title 1
- 238000012876 topography Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 203
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 4
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 239000012212 insulator Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Abstract
A semiconductor structure is provided that includes a semiconductor oxide layer having features. The semiconductor oxide layer having the features is located between an active semiconductor layer and a handle substrate. The semiconductor structure includes a planarized top surface of the active semiconductor layer such that the semiconductor oxide layer is beneath the planarized top surface. The features within the semiconductor oxide layer are mated with a surface of the active semiconductor layer.
Description
- This application is a divisional of U.S. patent application Ser. No. 12/958,429, filed Dec. 2, 2010 the entire content and disclosure of which is incorporated herein by reference.
- The present disclosure relates to a method of manufacturing a semiconductor structure and a resulting semiconductor structure that is formed by the method. More particularly, the present disclosure provides a method of manufacturing a semiconductor-on-insulator (SOI) substrate including a semiconductor oxide layer having features buried between two semiconductor materials.
- A semiconductor substrate of a semiconductor chip or semiconductor device may be a semiconductor-on-insulator (SOI) substrate. In some instances, an SOI substrate includes an insulating layer, such as a semiconductor oxide, grown on a conventional semiconductor wafer, followed by growing a semiconductor body to sandwich the insulating layer between two semiconductor materials. The insulating layer may typically be composed of silicon oxide, and the semiconductor wafer and semiconductor body may both be comprised of silicon. In a typical SOI substrate, the insulating layer that is located between the two semiconductor materials has a planar first surface and an opposing planar second surface.
- An SOI substrate may also be formed by utilizing a technique such as, for example, SIMOX (Separation by Implanted Oxygen). In a typical SIMOX process, oxygen ions are implanted into a bulk semiconductor wafer. In yet another method of forming an SOI substrate, a layer transfer method, which may include at least one wafer bonding step, can be used.
- In the semiconductor industry, research indicates that the conduction speed of an SOI substrate is faster than a conventional bulk semiconductor substrate. A semiconductor device formed on an SOI substrate is preferable in the industry for applications requiring high breakdown voltage. For these and other reasons, SOI devices are sought after in the industry.
- It would therefore be desirable to provide a semiconductor-on-insulator substrate which is less susceptible to unwanted exposure and damage during semiconductor processing. Similarly, a method of semiconductor manufacturing is needed to provide the semiconductor-on-insulator substrate described above.
- A semiconductor structure is provided that contains a semiconductor oxide layer including features. By “features” it is meant that one surface of the semiconductor oxide layer is non-planar having recessed regions adjacent to non-recessed regions. The semiconductor oxide layer having the features can be, for example, a silicon oxide layer or a germanium oxide layer.
- The semiconductor oxide layer which contains the features is located between an active semiconductor layer and a handle substrate. The active semiconductor layer has a planarized top surface such that the semiconductor oxide layer containing the features is beneath the planarized top surface. In the structure provided, the non-planar surface of the semiconductor oxide layer is in direct contact with the active semiconductor layer.
- Specifically, and in one aspect of the present disclosure, a semiconductor structure is provided that includes a semiconductor oxide layer having features located between an active semiconductor layer and a handle substrate. The semiconductor oxide layer having the features includes a non-planar surface in direct contact with a surface of the active semiconductor layer and an opposing planar surface is in direct contact with an upper surface of the handle substrate. The surface of the active semiconductor layer that is in direct contact with the non-planar surface of the semiconductor oxide layer opposes a planar top surface of the active semiconductor layer.
- In another aspect of the present disclosure, a method of manufacturing a semiconductor structure is provided. The method of the present disclosure includes forming a semiconductor oxide layer on a top surface of a semiconductor substrate using a first thermal oxidation. The semiconductor oxide layer is patterned to expose portions of the semiconductor substrate. A second thermal oxidation is performed to form a semiconductor oxide layer having features therein. A top surface of the semiconductor oxide layer having the features is then planarized. A handle substrate is bonded to the planarized top surface of the semiconductor oxide layer to form a semiconductor structure. An exposed surface of the semiconductor substrate is then planarized to provide an active semiconductor layer of the semiconductor structure. The semiconductor oxide layer having the features is beneath the planarized top surface of the active semiconductor layer, and the semiconductor oxide layer having the features is located between the active semiconductor layer and the handle substrate. As mentioned above, the semiconductor oxide layer having the features includes a non-planar surface that is in direct contact with a surface of the active semiconductor layer, and a planar surface in direct contact with an upper surface of the handle substrate.
- The features and advantages of the present disclosure will become apparent from the following detailed description of illustrative embodiments thereof, which is to be read in connection with the accompanying drawings. The various features of the drawings are not to scale as the illustrations are for clarity in facilitating one skilled in the art in understanding the disclosure in conjunction with the detailed description. In the drawings:
-
FIG. 1 is a cross sectional side elevational view depicting an initial semiconductor substrate according to the present disclosure; -
FIG. 2 is a cross sectional side elevational view of the initial semiconductor substrate shown inFIG. 1 including a semiconductor oxide layer after thermal oxidation; -
FIG. 3 is a cross sectional side elevational view of the semiconductor substrate shown inFIG. 2 depicting patterning in the semiconductor oxide layer; -
FIG. 4 is a cross sectional side elevational view of the semiconductor substrate shown inFIG. 3 depicting the patterned semiconductor oxide layer after another thermal oxidation which forms a semiconductor oxide layer having features therein; -
FIG. 5 is a cross sectional side elevational view depicting the semiconductor substrate shown inFIG. 4 after planarization of the semiconductor oxide layer having the features; -
FIG. 6 is a cross sectional side elevational view of the semiconductor substrate shown inFIG. 5 with a hydrogen implant and hydrogen layer within the semiconductor substrate; -
FIG. 7 is a cross sectional side elevational view of the semiconductor substrate shown inFIG. 6 including a bonded handle substrate, and the formed semiconductor structure which includes the semiconductor substrate being inverted; -
FIG. 8 is a cross sectional side elevational view of the semiconductor structure shown inFIG. 7 depicting splitting the semiconductor substrate at the hydrogen layer; and -
FIG. 9 is a cross sectional side elevational view depicting a planarized semiconductor structure according to an embodiment of the disclosure. - The present disclosure will now be described in greater detail by referring to the following discussion and drawings that accompany the present application. The drawings of the present application, which are referred to herein below in greater detail, are provided for illustrative purposes and, as such, they are not drawn to scale.
- In the following description, numerous specific details are set forth, such as particular structures, components, materials, dimensions, processing steps and techniques, in order to provide a thorough understanding of the present disclosure. However, it will be appreciated by one of ordinary skill in the art that the present disclosure may be practiced without these specific details. In other instances, well-known structures or processing steps have not been described in detail in order to avoid obscuring the present disclosure.
- It will be understood that when an element as a layer, region or substrate is referred to as being “on” or “over” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or “directly over” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.
- Referring to
FIGS. 1-9 , according to an illustrative embodiment of the present disclosure, a method for processing a semiconductor structure is shown. Specifically,FIGS. 1-9 illustrate a method of manufacturing a semiconductor structure, i.e., a semiconductor-on-insulator substrate, that includes a semiconductor oxide layer having features located between an active semiconductor layer and a handle substrate. The features of the semiconductor substrate, which are represented by a non-planar surface, are mated with a surface of the active semiconductor layer. - The method of the present disclosure includes providing an
initial structure 10, which includes asemiconductor substrate 14 that may be embodied as a first semiconductor layer, for example, a silicon (Si) wafer or substrate, as inFIG. 1 . Alternative embodiments may include a silicon carbon substrate. Still other alternative semiconductor materials for thesemiconductor substrate 14 may include SiGe, SiGeC, Ge alloys, GaAs, InAs, InP and other III/IV or II/VI compound semiconductors may be used. Alternatively, thesemiconductor substrate 14 may also be a layered semiconductor such as, for example, Si/SiGe, Si/SiC, or silicon germanium-on-insulators (SGOIs), as well as, silicon-on-insulators (SOIs). The insulating material can be an organic insulator, an inorganic insulator or a combination thereof including multilayers. - Referring to
FIG. 2 , a thermal oxidation process is applied to the top of thesemiconductor substrate 14 to produce asemiconductor oxide layer 18, for example, a silicon oxide or germanium oxide layer, on the top of thesemiconductor substrate 14. In one embodiment of the present disclosure, the thermal oxidation is a growing process using a Si substrate and oxygen implantation, for example, using either a wet or dry oxidation method. The thermal oxidation that can be employed in the present disclosure includes conditions that are well known to those skilled in the art. - In alternative embodiments, when using a carbon or quartz substrate, a deposit of an oxide is typically used as the oxide cannot be grown as with silicon. Alternatively, an oxide layer may include rare earth metals that are crystalline, or aluminum oxide.
- Referring to
FIG. 3 , photolithography and etching are used to pattern thesemiconductor oxide layer 18 into a patternedsemiconductor oxide layer 22. The photolithography process that can be employed in this disclosure includes applying a photoresist (not shown) to the surface of thesemiconductor oxide layer 18, exposing the photoresist to a pattern of radiation, and then developing the pattern into the photoresist utilizing a conventional resist developer. Once the patterning of the photoresist is completed, portions of thesemiconductor oxide layer 18 that are covered by the photoresist are protected, while other portions of thesemiconductor oxide layer 18 are exposed. The exposed portions of the semiconductor oxide layer that are not protected by the patterned photoresist are removed using a selective etching process. - In one embodiment, a dry etch such as, for example, reactive ion etching, plasma etching, ion beam etching or laser ablation can be used to selectively remove the exposed portions of the semiconductor oxide layer that are not protected by the patterned photoresist. In another embodiment, a wet etch can be used to selectively remove the exposed portions of the semiconductor oxide layer that are not protected by the patterned photoresist. When a wet etch is employed, a chemical etchant selectively removes oxide compared to photoresist material and semiconductor substrate.
- Following the removal of the exposed portions of the semiconductor oxide layer, the patterned photoresist is typically stripped from the structure utilizing a conventional resist stripping process such as, for example, ashing.
- The foregoing steps of photolithography and etching leaves a patterned
semiconductor oxide layer 22 on the upper surface ofsemiconductor substrate 14. The patternedsemiconductor oxide layer 22 includes remaining semiconductor oxide layer that was not removed during the etching process described above. As shown inFIG. 3 , the patternedsemiconductor oxide layer 22 includes, for example, raisedportions 24 and etchedportions 25. In some embodiments, theetched portions 25 can have a small amount of semiconductor oxide left in the defined trenches, i.e., etchedportions 25 between the raisedportions 24, on thesemiconductor substrate 14. In other embodiments, no semiconductor oxide is left in the etchedportions 25. The patternedsemiconductor oxide layer 22 may be developed into electrical components or connections. - Referring to
FIG. 4 , additional semiconductor oxide can be grown on the exposed surfaces of thesemiconductor substrate 14 utilizing a second thermal oxidation process. The second thermal oxidation process forms a semiconductor oxide layer that contains features; this layer is referred to hereinafter as “feature layer 26” for short. In thefeature layer 26, semiconductor oxide has expanded upward from the patterned semiconductor oxide layer 22 (as shown inFIG. 3 ), and anoxide layer 27 is formed in the etched portions 25 (or defined trenches) between the raisedportions 24; note that theoxide layer 27 also consumes an upper portion of the exposed portions of thesemiconductor substrate 14. As shown,feature layer 26 at this point of the method has opposing surfaces that are both non-planar. - Referring to
FIG. 5 , an oxide chemical-mechanical polishing (CMP) is applied to the exposed non-planar surface of thefeature layer 26 shown inFIG. 4 , resulting in a planarsemiconductor oxide layer 30. The planarsemiconductor oxide layer 30 is planar on a top side and has features (i.e., is non-planar) on the side mating with thesemiconductor substrate 14. - Referring to
FIG. 6 , a technique for wafer splitting includes, a hydrogen (H+)ion implantation 37 which can be performed to create ahydrogen layer 38 beneath the surface of thesemiconductor substrate 14. Thehydrogen layer 38 bifurcates thesemiconductor substrate 14. Thehydrogen ion implantation 37 may be performed using a specified energy level and hydrogen dosage to result in a predetermined hydrogen layer depth. - Referring to
FIG. 7 , ahandle substrate 42 is positioned and bonded over the planarsemiconductor oxide layer 30 ofFIG. 6 , and a resultingplanarized semiconductor structure 34 is inverted. Once inverted, theplanarized semiconductor structure 34 includes anupper portion 15 of thesemiconductor substrate 14 above thehydrogen layer 38, and anactive semiconductor layer 16 beneath thehydrogen layer 38 which communicates with the planarsemiconductor oxide layer 30. Abond 44 between the planarsemiconductor oxide layer 30 and thehandle substrate 42 may be an oxide silicon bond. As shown, the non-planar surface of the planarsemiconductor oxide layer 30 is in direct contact with a surface of theactive semiconductor layer 16. - The
handle substrate 42 may include one of the semiconductor materials mentioned above forsubstrate 14. In one embodiment, thehandle substrate 42 and thesemiconductor substrate 14 are both comprised of Si. Bonding may occur using any bonding technique which is well known to those skilled in the art. - Referring to
FIG. 8 , theplanarized semiconductor structure 34 is heated, and thestructure 34 is split at thehydrogen layer 38 to remove theupper portion 15 of theplanarized semiconductor structure 34. The finalplanarized semiconductor structure 50 is shown inFIG. 9 . - The final
planarized semiconductor structure 50 shown inFIG. 9 includes the planarsemiconductor oxide layer 30 between theactive semiconductor layer 16 of thesemiconductor substrate 14, and thehandle substrate 42. The finalplanarized semiconductor structure 50 is planarized at itssurface 46 while the features of the planarsemiconductor oxide layer 30 are beneath thesurface 46 of the finalplanarized semiconductor structure 50. Moreover, the non-planar surface of the planarsemiconductor oxide layer 30 is in direct contact with a surface of theactive semiconductor layer 16, while the planar surface of the planarsemiconductor oxide layer 30 is in direct contact with an upper surface of thehandle substrate 42. - One advantage of the final
planarized semiconductor structure 50 is, for example, during a complementary metal-oxide-semiconductor (CMOS) manufacturing procedure, the finalplanarized semiconductor structure 50 is more easily processed because the features of theoxide layer 30, for example an SiO2 layer, are not exposed to unwanted processing either directly or indirectly. Further, the planarsemiconductor oxide layer 30 of the finalplanarized semiconductor structure 50 is not exposed to accidental damage as if the planarsemiconductor oxide layer 30 was exposed. Additionally, the finalplanarized semiconductor structure 50 includes thin and thick (partially and fully depleted) Silicon on Insulator (SOI), which enables both partially and fully depleted devices on the finalplanarized semiconductor structure 50. - The present disclosure can further be used with Microelectromechanical systems (MEMS) technology, bipolar devices, and bio sensors.
- While the present disclosure has been particularly shown and described with respect to preferred embodiments thereof, it will be understood by those skilled in the art that changes in forms and details may be made without departing from the spirit and scope of the present application. It is therefore intended that the present disclosure not be limited to the exact forms and details described and illustrated herein, but falls within the scope of the appended claims.
Claims (20)
1. A semiconductor structure, comprising:
a semiconductor oxide layer having features located between an active semiconductor layer and a handle substrate, wherein the semiconductor oxide layer having features includes a non-planar surface being in direct contact with a surface of the active semiconductor layer and an opposing planar surface being in direct contact with an upper surface of the handle substrate.
2. The semiconductor structure of claim 1 , wherein the active semiconductor layer includes silicon.
3. The semiconductor structure of claim 1 , wherein the active semiconductor layer includes silicon and carbon.
4. The semiconductor structure of claim 1 , wherein the active semiconductor layer includes quartz.
5. The semiconductor structure of claim 1 , wherein the active semiconductor layer has a planar top surface.
6. The semiconductor structure of claim 1 , wherein the semiconductor oxide layer includes silicon oxide.
7. The semiconductor structure of claim 1 , wherein the semiconductor oxide layer includes germanium oxide.
8. The semiconductor structure of claim 1 , wherein semiconductor oxide layer comprising a thermal oxide.
9. The semiconductor structure of claim 1 , wherein said features comprises raised portions and trench portions.
10. The semiconductor structure of claim 9 , wherein some of the raised portions have a different width.
11. The semiconductor structure of claim 10 , wherein some of the trench portions have a different width.
12. A semiconductor structure, comprising:
a semiconductor oxide layer having features, the semiconductor oxide layer located between an active semiconductor layer and a handle substrate, wherein the features of the semiconductor oxide layer are mated with a surface of the active semiconductor layer.
13. The structure of claim 12 , wherein the active semiconductor layer and the handle substrate are both comprised of silicon, and the semiconductor oxide layer is comprised of silicon oxide.
14. The semiconductor structure of claim 12 , wherein the active semiconductor layer includes silicon.
15. The semiconductor structure of claim 12 , wherein the active semiconductor layer includes silicon and carbon.
16. The semiconductor structure of claim 12 , wherein the active semiconductor layer includes quartz.
17. The semiconductor structure of claim 12 , wherein the active semiconductor layer has a planar top surface.
18. The semiconductor structure of claim 12 , wherein the semiconductor oxide layer includes germanium oxide.
19. The semiconductor structure of claim 12 , wherein said features comprises raised portions and trench portions.
20. The semiconductor structure of claim 19 , wherein some of the raised portions have a different width, and wherein some of the trench portions have a different width.
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US13/827,463 US20130193562A1 (en) | 2010-12-02 | 2013-03-14 | Structure and method for topography free soi integration |
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US12/958,429 US8936996B2 (en) | 2010-12-02 | 2010-12-02 | Structure and method for topography free SOI integration |
US13/827,463 US20130193562A1 (en) | 2010-12-02 | 2013-03-14 | Structure and method for topography free soi integration |
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US12/958,429 Division US8936996B2 (en) | 2010-12-02 | 2010-12-02 | Structure and method for topography free SOI integration |
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US13/827,463 Abandoned US20130193562A1 (en) | 2010-12-02 | 2013-03-14 | Structure and method for topography free soi integration |
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US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
US20070259528A1 (en) * | 2004-10-06 | 2007-11-08 | Commissariat A L'energie Atomique | Method for Providing Mixed Stacked Structures, with Various Insulating Zones and/or Electrically Conductiong Zones Vertically Localized |
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US6013954A (en) * | 1997-03-31 | 2000-01-11 | Nec Corporation | Semiconductor wafer having distortion-free alignment regions |
JP2001196566A (en) * | 2000-01-07 | 2001-07-19 | Sony Corp | Semiconductor substrate and method of manufacturing the same |
FR2850487B1 (en) * | 2002-12-24 | 2005-12-09 | Commissariat Energie Atomique | PROCESS FOR PRODUCING MIXED SUBSTRATES AND STRUCTURE THUS OBTAINED |
FR2876220B1 (en) * | 2004-10-06 | 2007-09-28 | Commissariat Energie Atomique | METHOD FOR PRODUCING MIXED STACKED STRUCTURES, VARIOUS INSULATING AREAS AND / OR LOCALIZED VERTICAL ELECTRICAL CONDUCTION ZONES. |
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- 2010-12-02 US US12/958,429 patent/US8936996B2/en not_active Expired - Fee Related
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US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
US20070259528A1 (en) * | 2004-10-06 | 2007-11-08 | Commissariat A L'energie Atomique | Method for Providing Mixed Stacked Structures, with Various Insulating Zones and/or Electrically Conductiong Zones Vertically Localized |
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US20120139085A1 (en) | 2012-06-07 |
US8936996B2 (en) | 2015-01-20 |
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