US20120154018A1 - High frequency semiconductor switch - Google Patents
High frequency semiconductor switch Download PDFInfo
- Publication number
- US20120154018A1 US20120154018A1 US13/355,257 US201213355257A US2012154018A1 US 20120154018 A1 US20120154018 A1 US 20120154018A1 US 201213355257 A US201213355257 A US 201213355257A US 2012154018 A1 US2012154018 A1 US 2012154018A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- high frequency
- terminal side
- contact
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
Definitions
- the present invention relates to a high frequency semiconductor switch, and more particularly, to a high frequency semiconductor switch used in wireless communications apparatuses.
- a front end of wireless communications apparatuses such as mobile phones, PCs, and the like, has had a high frequency semiconductor switch mounted therein.
- the high frequency semiconductor switch includes a plurality of field effect transistors (FETs).
- FETs field effect transistors
- a FET is used for each terminal, for example, a transmission terminal and a reception terminal in a time division multiple communications mode and a transmission terminal and a reception terminal in a frequency division multiple communications mode, or the like, (for example, see Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-194891).
- the FETs used for each terminal are generally designed to have the same configuration. Therefore, there is little difference between the terminals in terms of characteristics thereof.
- the FETs used for each terminal are designed to have the same configuration, but to have a difference in terms of the characteristics required between the terminals. For example, characteristics required for the transmission terminal and the reception terminal may be different.
- An aspect of the present invention provides a high frequency semiconductor switch having FETs designed in consideration of characteristics required for a transmission terminal and a reception terminal.
- a high frequency semiconductor switch having a plurality of field effect transistors able to implement wireless communications by switching an application of voltage to a gate of each field effect transistor
- the high frequency semiconductor switch being characterized in that, the plurality of field effect transistors each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate so as to be disposed at the predetermined distance, a source contact formed on the substrate so as to be connected with the source region, and a drain contact formed on the substrate so as to be connected with the drain region, and among the plurality of field effect transistors, a distance between a source contact and a drain contact of a reception terminal side transistor connected with a reception terminal side is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor connected with a transmission terminal side.
- the high frequency semiconductor switch at the transmission side having a relatively short distance, on resistance may be relatively small. Therefore, relatively high insertion loss characteristics required at the transmission side may be obtained. Meanwhile, at the reception side having a relatively long distance, a distance between the gate and the contact may be relatively long and crosstalk therebetween may be relatively small. Therefore, relatively high isolation characteristics required at the reception side may be obtained.
- FIG. 1 is a diagram showing an example of a schematic circuit configuration of a high frequency semiconductor switch according to an embodiment of the present invention
- FIG. 2 is a schematic plan view showing a wiring of an FET included in a switch according to the embodiment of the present invention.
- FIG. 3 is a schematic cross-sectional view of the FET taken along line 3 -A and 3 -B of FIG. 2 .
- FIG. 1 is a diagram showing an example of a schematic circuit configuration of a high frequency semiconductor switch according to an embodiment of the present invention.
- a high frequency semiconductor switch 10 may include four series switches 20 a to 20 d .
- the series switches 20 a to 20 d may be disposed between an antenna terminal 30 and RF terminals 40 a to 40 d .
- the series switches 20 a to 20 d may include at least one field effect transistor 50 (hereinafter, referred to as ‘FET’).
- FET field effect transistor 50
- gates of a plurality of FETs 50 included in the same series switches 20 a to 20 d may simultaneously receive voltage applied thereto. Therefore, conduction between the antenna terminal 30 and the RF terminals 40 a to 40 d may be controlled by switching an application of voltage to the gates for each series switch, 20 a to 20 d .
- a body of the FET may also have voltage applied thereto.
- the RF terminals 40 a and 40 b may be transmission terminals Tx and the RF terminals 40 c and 40 d may be reception terminals Rx.
- the transmission and reception terminals maybe, for example, a terminal having different frequencies for a frequency division multiple communications mode or a terminal to be switched every time for a time division multiple communications mode.
- a frequency of 900 MHz maybe transmitted, and as the series switch 20 c is turned-on and other series switches 20 a , 20 b , and 20 d are turned-off, a frequency of 900 MHz may be received.
- the number of series switches 20 and RF terminals 40 may be appropriately increased or reduced according to transmitting and receiving modes or necessary diversity.
- FIG. 2 is a schematic plan view showing a wiring of an FET included in a switch according to the embodiment of the present invention.
- FIG. 2A shows the wiring of the FET of the transmission terminal side switch and
- FIG. 2B shows the wiring of the FET of the reception terminal side switch.
- FIG. 3 is a schematic cross-sectional view of the FET taken along line 3 -A and 3 -B of FIG. 2 .
- FIG. 3A is a cross-sectional view of the FET of the transmission terminal side switch and
- FIG. 3B is a cross-sectional view of the FET of the reception terminal side switch.
- FIGS. 2A and 3A show, for example, an FET 50 a surrounded by a dotted line in the series switch 20 a of FIG. 1 and FIGS. 2B and 3B show, for example, an FET 50 c surrounded by a dotted line in the series switch 20 c of FIG. 1 .
- any one of FETs 50 a and 50 c may be formed on a silicon on insulator (SOI) substrate.
- a silicon oxide insulating film 110 may be formed on any conductive (for example, a P type) silicon substrate 100 .
- a semiconductor layer 120 on the insulating film 110 maybe formed with conductive (for example, an N type) source region 130 and drain region 140 different from the substrate.
- the gate 160 may be formed on the semiconductor region (body) between the source region 130 and the drain region 140 , having an oxide film 150 interposed therebetween.
- a source wiring 170 may be formed on the source region 130 .
- the source region 130 and the source wiring 170 may be electrically connected to each other through a source contact 172 .
- a drain wiring 180 may be formed on the drain region 140 .
- the drain region 140 and the drain wiring 180 may be electrically connected to each other through a drain contact 182 .
- FIGS. 2A and 2B are compared with FIGS. 3A and 3B .
- the width of the gate 160 is the same.
- an interval Lt between the source contact 172 and the drain contact 182 of the transmission terminal side FET 50 a shown in FIGS. 2 (A) and 3 (A) may be shorter than an interval Lr between the source contact 172 and the drain contact 182 of the reception terminal side FET 50 c shown in FIGS. 2(B) and 3(B) .
- the internal resistance (on-resistance) of the FET may be relatively small when signal (current) is applied.
- the voltage resistance is relatively small due to the on resistance, and therefore, the insertion loss may be relatively small.
- the path of current may be relatively long, and therefore, the insertion loss may be increased, but the distance between the gate 160 and the source contact 172 or the drain contact 182 may be relatively long. Since the contacts 172 and 182 are spaced apart from the gate 160 , crosstalk may be relatively reduced therebetween such that isolation characteristics are increased.
- the relatively small insertion loss (insertion loss characteristics) may be required.
- the insertion loss characteristics needs to be set appropriately and the isolation characteristics are required.
- the distance between the source contact 172 and the drain contact 182 of the transmission terminal side FET 50 a and the reception terminal side FET 50 c may be controlled.
- the distance Lt needs to be relatively short, and at the reception terminal side FET 50 c , the distance Lr needs to be relatively long. Therefore, relatively high insertion loss characteristics may be obtained at the transmission terminal side FET 50 a , and relatively high isolation characteristics may be obtained at the reception terminal side FET 50 c.
- the embodiment of the present invention describes the case in which a total of four RF terminals including two transmission terminals and two reception terminals are used.
- the number of transmission terminals and reception terminals are not limited to the above embodiment of the present invention.
- the embodiment of the present invention may be applied to different terminals.
- the source contact 172 and the drain contact 182 are disposed in a stepping stone manner. However, they are not limited to the above-mentioned manner.
- the contact lengthily extending along the source wiring 170 or the drain wiring 180 may be formed.
- the high frequency semiconductor switch having the FETs matching the characteristics required for the transmission terminal and the reception terminal may be implemented.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
- 1. Field of the Invention
- The present invention relates to a high frequency semiconductor switch, and more particularly, to a high frequency semiconductor switch used in wireless communications apparatuses.
- 2. Description of the Related Art
- A front end of wireless communications apparatuses such as mobile phones, PCs, and the like, has had a high frequency semiconductor switch mounted therein. The high frequency semiconductor switch includes a plurality of field effect transistors (FETs). A FET is used for each terminal, for example, a transmission terminal and a reception terminal in a time division multiple communications mode and a transmission terminal and a reception terminal in a frequency division multiple communications mode, or the like, (for example, see Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-194891).
- The FETs used for each terminal are generally designed to have the same configuration. Therefore, there is little difference between the terminals in terms of characteristics thereof.
- The FETs used for each terminal are designed to have the same configuration, but to have a difference in terms of the characteristics required between the terminals. For example, characteristics required for the transmission terminal and the reception terminal may be different.
- An aspect of the present invention provides a high frequency semiconductor switch having FETs designed in consideration of characteristics required for a transmission terminal and a reception terminal.
- According to an aspect of the present invention, there is provided a high frequency semiconductor switch having a plurality of field effect transistors able to implement wireless communications by switching an application of voltage to a gate of each field effect transistor, the high frequency semiconductor switch being characterized in that, the plurality of field effect transistors each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate so as to be disposed at the predetermined distance, a source contact formed on the substrate so as to be connected with the source region, and a drain contact formed on the substrate so as to be connected with the drain region, and among the plurality of field effect transistors, a distance between a source contact and a drain contact of a reception terminal side transistor connected with a reception terminal side is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor connected with a transmission terminal side.
- According to the high frequency semiconductor switch, at the transmission side having a relatively short distance, on resistance may be relatively small. Therefore, relatively high insertion loss characteristics required at the transmission side may be obtained. Meanwhile, at the reception side having a relatively long distance, a distance between the gate and the contact may be relatively long and crosstalk therebetween may be relatively small. Therefore, relatively high isolation characteristics required at the reception side may be obtained.
- The above and other aspects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
-
FIG. 1 is a diagram showing an example of a schematic circuit configuration of a high frequency semiconductor switch according to an embodiment of the present invention; -
FIG. 2 is a schematic plan view showing a wiring of an FET included in a switch according to the embodiment of the present invention; and -
FIG. 3 is a schematic cross-sectional view of the FET taken along line 3-A and 3-B ofFIG. 2 . - Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In explaining the drawings, like reference numerals will denote like elements throughout the specification and the overlapped explanation thereof will be omitted. Further, dimension rates of the drawings may be exaggerated for convenience so that they may be different from actual rates thereof. In addition, expressions “formed on ˜” may include a case in which any element is formed indirectly formed thereon through other object as well as a case in which any element is formed directly formed thereon.
-
FIG. 1 is a diagram showing an example of a schematic circuit configuration of a high frequency semiconductor switch according to an embodiment of the present invention. - As shown in
FIG. 1 , a highfrequency semiconductor switch 10 may include fourseries switches 20 a to 20 d. The series switches 20 a to 20 d may be disposed between anantenna terminal 30 andRF terminals 40 a to 40 d. The series switches 20 a to 20 d may include at least one field effect transistor 50 (hereinafter, referred to as ‘FET’). As shown inFIG. 1 , gates of a plurality ofFETs 50 included in the same series switches 20 a to 20 d may simultaneously receive voltage applied thereto. Therefore, conduction between theantenna terminal 30 and theRF terminals 40 a to 40 d may be controlled by switching an application of voltage to the gates for each series switch, 20 a to 20 d. Alternatively, a body of the FET may also have voltage applied thereto. - In an example shown in
FIG. 1 , in theRF terminals 40 a to 40 d, theRF terminals RF terminals - For example, as the
series switch 20 a is turned-on and theother series switches series switch 20 c is turned-on andother series switches series switches 20 and RF terminals 40 may be appropriately increased or reduced according to transmitting and receiving modes or necessary diversity. -
FIG. 2 is a schematic plan view showing a wiring of an FET included in a switch according to the embodiment of the present invention.FIG. 2A shows the wiring of the FET of the transmission terminal side switch andFIG. 2B shows the wiring of the FET of the reception terminal side switch.FIG. 3 is a schematic cross-sectional view of the FET taken along line 3-A and 3-B ofFIG. 2 .FIG. 3A is a cross-sectional view of the FET of the transmission terminal side switch andFIG. 3B is a cross-sectional view of the FET of the reception terminal side switch. -
FIGS. 2A and 3A show, for example, an FET 50 a surrounded by a dotted line in theseries switch 20 a ofFIG. 1 andFIGS. 2B and 3B show, for example, an FET 50 c surrounded by a dotted line in theseries switch 20 c ofFIG. 1 . - As shown in
FIGS. 2 and 3 , any one ofFETs insulating film 110 may be formed on any conductive (for example, a P type)silicon substrate 100. Asemiconductor layer 120 on theinsulating film 110 maybe formed with conductive (for example, an N type)source region 130 anddrain region 140 different from the substrate. Thegate 160 may be formed on the semiconductor region (body) between thesource region 130 and thedrain region 140, having anoxide film 150 interposed therebetween. - A
source wiring 170 may be formed on thesource region 130. Thesource region 130 and thesource wiring 170 may be electrically connected to each other through asource contact 172. Adrain wiring 180 may be formed on thedrain region 140. Thedrain region 140 and thedrain wiring 180 may be electrically connected to each other through adrain contact 182. -
FIGS. 2A and 2B are compared withFIGS. 3A and 3B . The width of thegate 160 is the same. However, an interval Lt between thesource contact 172 and thedrain contact 182 of the transmissionterminal side FET 50 a shown inFIGS. 2 (A) and 3 (A) may be shorter than an interval Lr between thesource contact 172 and thedrain contact 182 of the receptionterminal side FET 50 c shown inFIGS. 2(B) and 3(B) . - In the transmission
terminal side FET 50 a having a short interval Lt, since the path of current is relatively short, the internal resistance (on-resistance) of the FET may be relatively small when signal (current) is applied. The voltage resistance is relatively small due to the on resistance, and therefore, the insertion loss may be relatively small. Meanwhile, in the receptionterminal side FET 50 c having the long interval Lr, the path of current may be relatively long, and therefore, the insertion loss may be increased, but the distance between thegate 160 and thesource contact 172 or thedrain contact 182 may be relatively long. Since thecontacts gate 160, crosstalk may be relatively reduced therebetween such that isolation characteristics are increased. - Since a high power signal is applied to the transmission terminal, the relatively small insertion loss (insertion loss characteristics) may be required. On the other hand, since a relatively low power signal is applied to the reception terminal, the insertion loss characteristics needs to be set appropriately and the isolation characteristics are required. As described above, in consideration of the above requirements, the distance between the
source contact 172 and thedrain contact 182 of the transmissionterminal side FET 50 a and the receptionterminal side FET 50 c may be controlled. That is, in consideration of a trade off relation of the insertion loss characteristics and the isolation characteristics for the distance between thesource contact 172 and thedrain contact 182, at the transmissionterminal side FET 50 a, the distance Lt needs to be relatively short, and at the receptionterminal side FET 50 c, the distance Lr needs to be relatively long. Therefore, relatively high insertion loss characteristics may be obtained at the transmissionterminal side FET 50 a, and relatively high isolation characteristics may be obtained at the receptionterminal side FET 50 c. - The embodiment of the present invention describes the case in which a total of four RF terminals including two transmission terminals and two reception terminals are used. However, the number of transmission terminals and reception terminals are not limited to the above embodiment of the present invention. The embodiment of the present invention may be applied to different terminals.
- As shown in
FIG. 2 , thesource contact 172 and thedrain contact 182 are disposed in a stepping stone manner. However, they are not limited to the above-mentioned manner. The contact lengthily extending along thesource wiring 170 or thedrain wiring 180 may be formed. - As set forth above, according to the embodiments of the present invention, the high frequency semiconductor switch having the FETs matching the characteristics required for the transmission terminal and the reception terminal may be implemented.
- While the present invention has been shown and described in connection with the above-described embodiments, it will be apparent to those in the art that modifications and variations can be made without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (1)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010283723A JP5735268B2 (en) | 2010-12-20 | 2010-12-20 | High frequency semiconductor switch |
JP2010-283723 | 2010-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20120154018A1 true US20120154018A1 (en) | 2012-06-21 |
US8482337B2 US8482337B2 (en) | 2013-07-09 |
Family
ID=46233584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/355,257 Active US8482337B2 (en) | 2010-12-20 | 2012-01-20 | High frequency semiconductor switch |
Country Status (3)
Country | Link |
---|---|
US (1) | US8482337B2 (en) |
JP (1) | JP5735268B2 (en) |
KR (1) | KR101228652B1 (en) |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140327474A1 (en) * | 2012-05-29 | 2014-11-06 | Life Technologies Corporation | System for reducing noise in a chemical sensor array |
US9239313B2 (en) | 2010-06-30 | 2016-01-19 | Life Technologies Corporation | Ion-sensing charge-accumulation circuits and methods |
US9269708B2 (en) | 2006-12-14 | 2016-02-23 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US9404920B2 (en) | 2006-12-14 | 2016-08-02 | Life Technologies Corporation | Methods and apparatus for detecting molecular interactions using FET arrays |
US9614520B2 (en) | 2015-03-13 | 2017-04-04 | Kabushiki Kaisha Toshiba | Semiconductor switch |
US9618475B2 (en) | 2010-09-15 | 2017-04-11 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US9671363B2 (en) | 2013-03-15 | 2017-06-06 | Life Technologies Corporation | Chemical sensor with consistent sensor surface areas |
US9823217B2 (en) | 2013-03-15 | 2017-11-21 | Life Technologies Corporation | Chemical device with thin conductive element |
US9835585B2 (en) | 2013-03-15 | 2017-12-05 | Life Technologies Corporation | Chemical sensor with protruded sensor surface |
US9841398B2 (en) | 2013-01-08 | 2017-12-12 | Life Technologies Corporation | Methods for manufacturing well structures for low-noise chemical sensors |
US9852919B2 (en) | 2013-01-04 | 2017-12-26 | Life Technologies Corporation | Methods and systems for point of use removal of sacrificial material |
US9927393B2 (en) | 2009-05-29 | 2018-03-27 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US9951382B2 (en) | 2006-12-14 | 2018-04-24 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US9960253B2 (en) | 2010-07-03 | 2018-05-01 | Life Technologies Corporation | Chemically sensitive sensor with lightly doped drains |
US9964515B2 (en) | 2008-10-22 | 2018-05-08 | Life Technologies Corporation | Integrated sensor arrays for biological and chemical analysis |
US9970984B2 (en) | 2011-12-01 | 2018-05-15 | Life Technologies Corporation | Method and apparatus for identifying defects in a chemical sensor array |
US9995708B2 (en) | 2013-03-13 | 2018-06-12 | Life Technologies Corporation | Chemical sensor with sidewall spacer sensor surface |
US10077472B2 (en) | 2014-12-18 | 2018-09-18 | Life Technologies Corporation | High data rate integrated circuit with power management |
US10100357B2 (en) | 2013-05-09 | 2018-10-16 | Life Technologies Corporation | Windowed sequencing |
US10379079B2 (en) | 2014-12-18 | 2019-08-13 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US10451585B2 (en) | 2009-05-29 | 2019-10-22 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US10458942B2 (en) | 2013-06-10 | 2019-10-29 | Life Technologies Corporation | Chemical sensor array having multiple sensors per well |
US10605767B2 (en) | 2014-12-18 | 2020-03-31 | Life Technologies Corporation | High data rate integrated circuit with transmitter configuration |
US10641729B2 (en) | 2010-06-30 | 2020-05-05 | Life Technologies Corporation | Column ADC |
US10718733B2 (en) | 2009-05-29 | 2020-07-21 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US20210408248A1 (en) * | 2020-06-30 | 2021-12-30 | Samsung Electro-Mechanics Co., Ltd. | Radio frequency switch |
US11231451B2 (en) | 2010-06-30 | 2022-01-25 | Life Technologies Corporation | Methods and apparatus for testing ISFET arrays |
US11307166B2 (en) | 2010-07-01 | 2022-04-19 | Life Technologies Corporation | Column ADC |
US11339430B2 (en) | 2007-07-10 | 2022-05-24 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US11362655B2 (en) | 2020-03-04 | 2022-06-14 | Db Hitek Co., Ltd. | RF switch device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101952857B1 (en) * | 2013-12-20 | 2019-02-27 | 삼성전기주식회사 | Switching circuit and high frequency switch including the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5548239A (en) * | 1993-05-21 | 1996-08-20 | Sony Corporation | Radio receiver-transmitter apparatus and signal changeover switch |
US5774792A (en) * | 1994-08-29 | 1998-06-30 | Hitachi, Ltd. | Low distortion switch |
US8244199B2 (en) * | 2009-01-29 | 2012-08-14 | Renesas Electronics Corporation | Semiconductor device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3441236B2 (en) * | 1995-04-24 | 2003-08-25 | ソニー株式会社 | Semiconductor integrated circuit device |
JPH09232827A (en) * | 1996-02-21 | 1997-09-05 | Oki Electric Ind Co Ltd | Semiconductor device and transmission/reception changeover antenna switch circuit |
JP2005038958A (en) * | 2003-07-17 | 2005-02-10 | Oki Electric Ind Co Ltd | Semiconductor device and manufacturing method thereof |
JP2007073815A (en) * | 2005-09-08 | 2007-03-22 | Toshiba Corp | Semiconductor device |
JP4106376B2 (en) * | 2005-09-30 | 2008-06-25 | 富士通株式会社 | Switch circuit and integrated circuit |
JP2009194891A (en) | 2008-01-15 | 2009-08-27 | Toshiba Corp | High frequency switching circuit |
US20090181630A1 (en) | 2008-01-15 | 2009-07-16 | Kabushiki Kaisha Toshiba | Radio frequency switch circuit |
-
2010
- 2010-12-20 JP JP2010283723A patent/JP5735268B2/en not_active Expired - Fee Related
-
2011
- 2011-08-30 KR KR1020110087275A patent/KR101228652B1/en active IP Right Grant
-
2012
- 2012-01-20 US US13/355,257 patent/US8482337B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5548239A (en) * | 1993-05-21 | 1996-08-20 | Sony Corporation | Radio receiver-transmitter apparatus and signal changeover switch |
US5774792A (en) * | 1994-08-29 | 1998-06-30 | Hitachi, Ltd. | Low distortion switch |
US8244199B2 (en) * | 2009-01-29 | 2012-08-14 | Renesas Electronics Corporation | Semiconductor device |
Cited By (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9951382B2 (en) | 2006-12-14 | 2018-04-24 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US10816506B2 (en) | 2006-12-14 | 2020-10-27 | Life Technologies Corporation | Method for measuring analytes using large scale chemfet arrays |
US10415079B2 (en) | 2006-12-14 | 2019-09-17 | Life Technologies Corporation | Methods and apparatus for detecting molecular interactions using FET arrays |
US9269708B2 (en) | 2006-12-14 | 2016-02-23 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US9404920B2 (en) | 2006-12-14 | 2016-08-02 | Life Technologies Corporation | Methods and apparatus for detecting molecular interactions using FET arrays |
US10203300B2 (en) | 2006-12-14 | 2019-02-12 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US9989489B2 (en) | 2006-12-14 | 2018-06-05 | Life Technnologies Corporation | Methods for calibrating an array of chemically-sensitive sensors |
US11732297B2 (en) * | 2006-12-14 | 2023-08-22 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US10633699B2 (en) | 2006-12-14 | 2020-04-28 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US20220340965A1 (en) * | 2006-12-14 | 2022-10-27 | Life Technologies Corporation | Methods and Apparatus for Measuring Analytes Using Large Scale FET Arrays |
US11435314B2 (en) | 2006-12-14 | 2022-09-06 | Life Technologies Corporation | Chemically-sensitive sensor array device |
US10502708B2 (en) | 2006-12-14 | 2019-12-10 | Life Technologies Corporation | Chemically-sensitive sensor array calibration circuitry |
US11339430B2 (en) | 2007-07-10 | 2022-05-24 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US9964515B2 (en) | 2008-10-22 | 2018-05-08 | Life Technologies Corporation | Integrated sensor arrays for biological and chemical analysis |
US11137369B2 (en) | 2008-10-22 | 2021-10-05 | Life Technologies Corporation | Integrated sensor arrays for biological and chemical analysis |
US10451585B2 (en) | 2009-05-29 | 2019-10-22 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US9927393B2 (en) | 2009-05-29 | 2018-03-27 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US10809226B2 (en) | 2009-05-29 | 2020-10-20 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US11692964B2 (en) | 2009-05-29 | 2023-07-04 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US10718733B2 (en) | 2009-05-29 | 2020-07-21 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US11768171B2 (en) | 2009-05-29 | 2023-09-26 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US10481123B2 (en) | 2010-06-30 | 2019-11-19 | Life Technologies Corporation | Ion-sensing charge-accumulation circuits and methods |
US11231451B2 (en) | 2010-06-30 | 2022-01-25 | Life Technologies Corporation | Methods and apparatus for testing ISFET arrays |
US10641729B2 (en) | 2010-06-30 | 2020-05-05 | Life Technologies Corporation | Column ADC |
US9239313B2 (en) | 2010-06-30 | 2016-01-19 | Life Technologies Corporation | Ion-sensing charge-accumulation circuits and methods |
US11307166B2 (en) | 2010-07-01 | 2022-04-19 | Life Technologies Corporation | Column ADC |
US9960253B2 (en) | 2010-07-03 | 2018-05-01 | Life Technologies Corporation | Chemically sensitive sensor with lightly doped drains |
US9618475B2 (en) | 2010-09-15 | 2017-04-11 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US9958415B2 (en) | 2010-09-15 | 2018-05-01 | Life Technologies Corporation | ChemFET sensor including floating gate |
US9958414B2 (en) | 2010-09-15 | 2018-05-01 | Life Technologies Corporation | Apparatus for measuring analytes including chemical sensor array |
US9970984B2 (en) | 2011-12-01 | 2018-05-15 | Life Technologies Corporation | Method and apparatus for identifying defects in a chemical sensor array |
US10365321B2 (en) | 2011-12-01 | 2019-07-30 | Life Technologies Corporation | Method and apparatus for identifying defects in a chemical sensor array |
US10598723B2 (en) | 2011-12-01 | 2020-03-24 | Life Technologies Corporation | Method and apparatus for identifying defects in a chemical sensor array |
US20140327474A1 (en) * | 2012-05-29 | 2014-11-06 | Life Technologies Corporation | System for reducing noise in a chemical sensor array |
US10404249B2 (en) | 2012-05-29 | 2019-09-03 | Life Technologies Corporation | System for reducing noise in a chemical sensor array |
US9985624B2 (en) | 2012-05-29 | 2018-05-29 | Life Technologies Corporation | System for reducing noise in a chemical sensor array |
US9270264B2 (en) * | 2012-05-29 | 2016-02-23 | Life Technologies Corporation | System for reducing noise in a chemical sensor array |
US9852919B2 (en) | 2013-01-04 | 2017-12-26 | Life Technologies Corporation | Methods and systems for point of use removal of sacrificial material |
US10436742B2 (en) | 2013-01-08 | 2019-10-08 | Life Technologies Corporation | Methods for manufacturing well structures for low-noise chemical sensors |
US9841398B2 (en) | 2013-01-08 | 2017-12-12 | Life Technologies Corporation | Methods for manufacturing well structures for low-noise chemical sensors |
US9995708B2 (en) | 2013-03-13 | 2018-06-12 | Life Technologies Corporation | Chemical sensor with sidewall spacer sensor surface |
US9671363B2 (en) | 2013-03-15 | 2017-06-06 | Life Technologies Corporation | Chemical sensor with consistent sensor surface areas |
US10481124B2 (en) | 2013-03-15 | 2019-11-19 | Life Technologies Corporation | Chemical device with thin conductive element |
US9823217B2 (en) | 2013-03-15 | 2017-11-21 | Life Technologies Corporation | Chemical device with thin conductive element |
US9835585B2 (en) | 2013-03-15 | 2017-12-05 | Life Technologies Corporation | Chemical sensor with protruded sensor surface |
US10422767B2 (en) | 2013-03-15 | 2019-09-24 | Life Technologies Corporation | Chemical sensor with consistent sensor surface areas |
US10100357B2 (en) | 2013-05-09 | 2018-10-16 | Life Technologies Corporation | Windowed sequencing |
US10655175B2 (en) | 2013-05-09 | 2020-05-19 | Life Technologies Corporation | Windowed sequencing |
US11028438B2 (en) | 2013-05-09 | 2021-06-08 | Life Technologies Corporation | Windowed sequencing |
US10816504B2 (en) | 2013-06-10 | 2020-10-27 | Life Technologies Corporation | Chemical sensor array having multiple sensors per well |
US11774401B2 (en) | 2013-06-10 | 2023-10-03 | Life Technologies Corporation | Chemical sensor array having multiple sensors per well |
US11499938B2 (en) | 2013-06-10 | 2022-11-15 | Life Technologies Corporation | Chemical sensor array having multiple sensors per well |
US10458942B2 (en) | 2013-06-10 | 2019-10-29 | Life Technologies Corporation | Chemical sensor array having multiple sensors per well |
US10077472B2 (en) | 2014-12-18 | 2018-09-18 | Life Technologies Corporation | High data rate integrated circuit with power management |
US10379079B2 (en) | 2014-12-18 | 2019-08-13 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US11536688B2 (en) | 2014-12-18 | 2022-12-27 | Life Technologies Corporation | High data rate integrated circuit with transmitter configuration |
US10767224B2 (en) | 2014-12-18 | 2020-09-08 | Life Technologies Corporation | High data rate integrated circuit with power management |
US10605767B2 (en) | 2014-12-18 | 2020-03-31 | Life Technologies Corporation | High data rate integrated circuit with transmitter configuration |
US9614520B2 (en) | 2015-03-13 | 2017-04-04 | Kabushiki Kaisha Toshiba | Semiconductor switch |
US11362655B2 (en) | 2020-03-04 | 2022-06-14 | Db Hitek Co., Ltd. | RF switch device |
US20210408248A1 (en) * | 2020-06-30 | 2021-12-30 | Samsung Electro-Mechanics Co., Ltd. | Radio frequency switch |
Also Published As
Publication number | Publication date |
---|---|
KR20120069528A (en) | 2012-06-28 |
JP5735268B2 (en) | 2015-06-17 |
JP2012134252A (en) | 2012-07-12 |
US8482337B2 (en) | 2013-07-09 |
KR101228652B1 (en) | 2013-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8482337B2 (en) | High frequency semiconductor switch | |
US9065164B2 (en) | High frequency switch | |
US10298222B2 (en) | High performance radio frequency switch | |
US10535607B2 (en) | Field-effect transistor, method of manufacturing the same, and radio-frequency device | |
US8441304B2 (en) | High-frequency switch circuit | |
US8779840B2 (en) | High frequency switch | |
KR101309384B1 (en) | High frequency switch | |
US8970279B2 (en) | Radio frequency switch circuit | |
US8818298B2 (en) | High frequency switch | |
CN103595380A (en) | RF switch with complementary switching devices | |
US20150381168A1 (en) | High frequency switching circuit | |
JP5652946B2 (en) | High frequency switch | |
US9035716B2 (en) | High frequency switch | |
US8674415B2 (en) | High frequency semiconductor switch | |
US20230009677A1 (en) | Body contact fet | |
US10672877B2 (en) | Method of boosting RON*COFF performance | |
KR101309445B1 (en) | High frequency switch | |
JP2018046116A (en) | Semiconductor device | |
CN103219977A (en) | High-frequency semiconductor switch | |
US20190115913A1 (en) | Traveling-wave switch with multiple source nodes | |
CN103219974A (en) | High-frequency switch | |
JP2008211083A (en) | High-frequency switch |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SAMSUNG ELECTRO-MECHANICS CO., LTD., KOREA, REPUBL Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SUGIURA, TSUYOSHI;REEL/FRAME:027570/0853 Effective date: 20120110 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: AIRBUS OPERATIONS GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SIEBEN, MARTIN;REEL/FRAME:040464/0873 Effective date: 20161129 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |