US20110232730A1 - Lattice matchable alloy for solar cells - Google Patents
Lattice matchable alloy for solar cells Download PDFInfo
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- US20110232730A1 US20110232730A1 US12/749,076 US74907610A US2011232730A1 US 20110232730 A1 US20110232730 A1 US 20110232730A1 US 74907610 A US74907610 A US 74907610A US 2011232730 A1 US2011232730 A1 US 2011232730A1
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- 239000000956 alloy Substances 0.000 title claims abstract description 18
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 24
- 229910052738 indium Inorganic materials 0.000 claims abstract description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 21
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 11
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 15
- 238000005286 illumination Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910000756 V alloy Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Definitions
- the present invention relates to multijunction solar cells, and in particular to high efficiency solar cells comprised of III-V semiconductor alloys.
- Multijunction solar cells made primarily of III-V semiconductor alloys are known to produce solar cell efficiencies exceeding efficiencies of other types of photovoltaic materials.
- Such alloys are combinations of elements drawn from columns III and V of the standard Periodic Table, identified hereinafter by their standard chemical symbols, names and abbreviation. (Those of skill in the art can identify their class of semiconductor properties by class without specific reference to their column.)
- the high efficiencies of these solar cells make them attractive for terrestrial concentrating photovoltaic systems and systems designed to operate in outer space.
- Multijunction solar cells with efficiencies above 40% under concentrations equivalent to several hundred suns have been reported.
- the known highest efficiency devices have three subcells with each subcell consisting of a functional p-n junction and other layers, such as front and back surface field layers.
- the known highest efficiency, lattice-matched solar cells typically include a monolithic stack of three functional p-n junctions, or subcells, grown epitaxially on a germanium (Ge) substrate.
- the top subcell has been made of (Al)GaInP, the middle one of (In)GaAs, and the bottom junction included the Ge substrate.
- This structure is not optimal for efficiency, in that the bottom junction can generate roughly twice the short circuit current of the upper two junctions, as reported by J. F.
- this 1 eV material might be considered as a fourth junction to take advantage of the entire portion of the spectrum lying between 0.7 eV (the band gap for germanium) and 1.1 eV (the upper end of the range of bandgaps for the ⁇ 1 eV layer). See for example, S. R. Kurtz, D. Myers, and J. M. Olson, “Projected Performance of Three and Four-Junction Devices Using GaAs and GaInP,” 26 th IEEE Photovoltaics Specialists Conference, 1997, pp. 875-878.
- Ga 1-x In x N y As 1-y has been identified as such a 1 eV material, but currents high enough to match the other subcells have not been achieved, see, e.g., A. J. Ptak et al., Journal of Applied Physics 98 (2005) 094501. This has been attributed to low minority carrier diffusion lengths that prevent effective photocarrier collection.
- Solar subcell design composed of gallium, indium, nitrogen, arsenic and various concentrations of antimony (GaInNAsSb) has been investigated with the reported outcome that antimony is helpful in decreasing surface roughness and allowing growth at higher substrate temperatures where annealing is not necessary, but the investigators reported that antimony, even in small concentrations is critical to be avoided as detrimental to adequate device performance.
- Ga 1-x In x N y As 1-y-z Sb z with 0.05 ⁇ x ⁇ 0.07, 0.01 ⁇ y ⁇ 0.02 and 0.02 ⁇ z ⁇ 0.06 can be used to produce a lattice-matched material with a band gap of approximately 1 eV that can provide sufficient current for integration into a multijunction solar cell.
- an alloy composition that has a bandgap of at least 0.9 eV, namely, Ga 1-x In x N y As 1-y-z Sb z with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content as compared with known alloys of GaInNAsSb, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells suitable for use in multijunction solar cells.
- the composition ranges for Ga 1-x In x N y As 1-y-z Sb z are 0.07 ⁇ x ⁇ 0.18, 0.025 ⁇ y ⁇ 0.04 and 0.001 ⁇ z ⁇ 0.03.
- composition ranges employ greater fractions of In and N in GaInNAsSb than previously taught and allow the creation of subcells with bandgaps that are design-tunable in the range of 0.9-1.1 eV, which is the range of interest for GaInNAsSb subcells.
- This composition range alloy will hereinafter be denoted “low-antimony, enhanced indium-and-nitrogen GaInNAsSb” alloy.
- Subcells of such an alloy can be grown by molecular beam epitaxy (MBE) and should be able to be grown by metallorganic chemical vapor deposition (MOCVD), using techniques known to one skilled in the art.
- FIG. 1A is a schematic cross-section of a three junction solar cell incorporating the invention.
- FIG. 1B is a schematic cross-section of a four junction solar cell incorporating the invention.
- FIG. 2A is a schematic cross-section of a GaInNAsSb subcell according to the invention.
- FIG. 2B is a detailed schematic cross-section illustrating an example GaInNAsSb subcell.
- FIG. 3 is a graph showing the efficiency versus band gap energy of subcells formed from different alloy materials, for comparison.
- FIG. 4 is a plot showing the short circuit current (J sc ) and open circuit voltage (V oc ) of subcells formed from different alloy materials, for comparison.
- FIG. 5 is a graph showing the photocurrent as a function of voltage for a triple junction solar cell incorporating a subcell according to the invention, under 1-sun AM1.5D illumination.
- FIG. 6 is a graph showing the photocurrent as a function of voltage for a triple junction solar cell incorporating a subcell according to the invention, under AM1.5D illumination equivalent to 523 suns.
- FIG. 7 is a graph of the short circuit current (J sc ) and open circuit voltage (V oc ) of low Sb, enhanced In and N GaInNAsSb subcells distinguished by the strain imparted to the film by the substrate.
- FIG. 1A is a schematic cross-section showing an example of a triple junction solar cell 10 according to the invention consisting essentially of a low Sb, enhanced In and N
- Tunnel junction 20 is between subcells 16 and 18
- tunnel junction 22 is between subcells 18 and 12 .
- Each of the subcells 12 , 16 , 18 comprises several associated layers, including front and back surface fields, an emitter and a base.
- the named subcell material e.g., (In)GaAs) forms the base layer, and may or may not form the other layers.
- FIG. 1B shows one such four-junction solar cell 100 with a specific low Sb, enhanced In and N GaInNAsSb subcell 12 as the third junction, and with a top subcell 16 of (Al)InGaP, a second subcell 18 of (In)GaAs and a bottom subcell 140 of Ge, which is also incorporated into a germanium (Ge) substrate.
- Each of the subcells 16 , 18 , 12 , 140 is separated by respective tunnel junctions 20 , 22 , 24 , and each of the subcells 16 , 18 , 12 , 140 may comprise several associated layers, including optional front and back surface fields, an emitter and a base.
- the named subcell material e.g., (In)GaAs
- forms the base layer and may or may not form the other layers.
- FIG. 2A is a schematic cross-section in greater detail of a GaInNAsSb subcell 12 , according to the invention.
- the low Sb, enhanced In and N GaInNAsSb subcell 12 is therefore characterized by its use of low Sb, enhanced In and N GaInNAsSb as the base layer 220 in the subcell 12 .
- Other components of the GaInNAsSb subcell 12 including an emitter 26 , an optional front surface field 28 and back surface field 30 , are preferably III-V alloys, including by way of example GaInNAs(Sb), (In)(Al)GaAs, (Al)InGaP or Ge.
- the low Sb, enhanced In and N GaInNAsSb base 220 may either be p-type or n-type, with an emitter 26 of the opposite type.
- FIG. 2B is a representative example of the more general structure 12 in FIG. 2A .
- Base layers 220 with no Sb, low Sb (0.001 ⁇ z ⁇ 0.03) and high Sb (0.03 ⁇ z ⁇ 0.06) were grown by molecular beam epitaxy and were substantially lattice-matched to a GaAs substrate (not shown). These alloy compositions were verified by secondary ion mass spectroscopy.
- the subcells 12 were subjected to a thermal anneal, processed with generally known solar cell processing, and then measured under the AM1.5D spectrum (1 sun) below a filter that blocked all light above the GaAs band gap.
- This filter was appropriate because a GaInNAsSb subcell 12 is typically beneath an (In)GaAs subcell in a multijunction stack (e.g., FIGS. 1A and 1B ), and thus light of higher energies will not reach the subcell 12 .
- FIG. 3 shows the efficiencies produced by the subcells 12 grown with different fractions of Sb as a function of their band gaps.
- the indium and nitrogen concentrations were each in the 0.07 to 0.18 and 0.025 to 0.04 ranges, respectively.
- the low Sb, enhanced In and N GaInNAsSb subcells represented by triangles
- the other two candidates represented by diamonds and squares. This is due to the combination of high voltage and high current capabilities in the low Sb, enhanced In and N GaInNAsSb devices. (See FIG. 4 ).
- FIG. 4 shows the combination of high voltage and high current capabilities in the low Sb, enhanced In and N GaInNAsSb devices.
- both the low and high concentration Sb devices have sufficient short-circuit current to match high efficiency (Al)InGaP subcells and (In)GaAs subcells (>13 mA/cm 2 under the filtered AM1.5D spectrum), and thus they may be used in typical three junction or four junction solar cells 10 , 100 without reducing the total current through the entire cell. This current-matching is essential for high efficiency.
- the devices without Sb have relatively high subcell efficiencies due to their high open circuit voltages, but their short circuit currents are too low for high efficiency multijunction solar cells, as is shown in FIG. 4 .
- FIG. 4 also confirms that Sb has a deleterious effect on voltage, as previously reported for other alloy compositions.
- the low Sb-type subcells have roughly 100 mV higher open-circuit voltages than the high Sb-type subcells.
- a triple junction solar cell 10 with an open circuit voltage of 3.1 V is found to have 3.3% higher relative efficiency compared to an otherwise identical cell with an open circuit voltage of 3.0 V.
- the inclusion of Sb in GaInNAs(Sb) solar cells is necessary to produce sufficient current for a high efficiency solar cell, but only by using low Sb (0.1-3%) can both high voltages and high currents be achieved.
- Compressive strain improves the open circuit voltage of low Sb, enhanced In and N GaInNAsSb subcells 10 , 100 . More specifically, low Sb, enhanced In and N GaInNAsSb layers 220 that have a lattice constant larger than that of a GaAs or Ge substrate when fully relaxed ( ⁇ 0.5% larger), and are thus under compressive strain when grown pseudomorphically on those substrates. They also give better device performance than layers with a smaller, fully relaxed lattice constant (under tensile strain).
- FIG. 7 shows the short circuit current and open circuit voltage of low Sb, enhanced In and N GaInNAsSb subcells grown on GaAs substrates under compressive strain (triangles) and tensile strain (diamonds). It can be seen that the subcells under compressive strain have consistently higher open circuit voltages than those under tensile strain.
- FIG. 5 shows a current-voltage curve of a triple junction solar cell of the structure in FIG. 1A under AM1.5D illumination equivalent to 1 sun. The efficiency of this device is 30.5%.
- FIG. 6 shows the current-voltage curve of the triple junction solar cell operated under a concentration equivalent to 523 suns, with an efficiency of 39.2%.
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Abstract
Description
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- The present invention relates to multijunction solar cells, and in particular to high efficiency solar cells comprised of III-V semiconductor alloys.
- Multijunction solar cells made primarily of III-V semiconductor alloys are known to produce solar cell efficiencies exceeding efficiencies of other types of photovoltaic materials. Such alloys are combinations of elements drawn from columns III and V of the standard Periodic Table, identified hereinafter by their standard chemical symbols, names and abbreviation. (Those of skill in the art can identify their class of semiconductor properties by class without specific reference to their column.) The high efficiencies of these solar cells make them attractive for terrestrial concentrating photovoltaic systems and systems designed to operate in outer space. Multijunction solar cells with efficiencies above 40% under concentrations equivalent to several hundred suns have been reported. The known highest efficiency devices have three subcells with each subcell consisting of a functional p-n junction and other layers, such as front and back surface field layers. These subcells are connected through tunnel junctions, and the dominant layers are either lattice matched to the underlying substrate or are grown over metamorphic layers. Lattice-matched devices and designs are desirable because they have proven reliability and because they use less semiconductor material than metamorphic solar cells, which require relatively thick buffer layers to accommodate differences in the lattice constants of the various materials. As set forth more fully in U.S. patent application Ser. No. 12/217,818, entitled “GaInNAsSb Solar Cells Grown by Molecular Beam Epitaxy,” which application is incorporated herein by reference, a layer made of GaInNAsSb material to create a third junction having a band gap of approximately 1.0 eV offers a promising approach to improving the efficiency of multijunction cells. Improvements are nevertheless to be considered on the cell described in that application.
- The known highest efficiency, lattice-matched solar cells typically include a monolithic stack of three functional p-n junctions, or subcells, grown epitaxially on a germanium (Ge) substrate. The top subcell has been made of (Al)GaInP, the middle one of (In)GaAs, and the bottom junction included the Ge substrate. (The foregoing nomenclature for a III-V alloy, wherein a constituent element is shown parenthetically, denotes a condition of variability in which that particular element can be zero.) This structure is not optimal for efficiency, in that the bottom junction can generate roughly twice the short circuit current of the upper two junctions, as reported by J. F. Geisz et al., “Inverted GaInP/(In)GaAs/InGaAs triple junction solar cells with low-stress metamorphic bottom junctions,” Proceedings of the 33rd IEEE PVSC Photovoltaics Specialists Conference, 2008. This extra current capability is wasted, since the net current must be uniform through the entire stack, a design feature known as current matching.
- In the disclosure of above noted U.S. patent application Ser. No. 12/217,818, it was shown that a material that is substantially lattice matched to Ge or GaAs with a band gap near 1.0 eV might be used to create a triple junction solar cell with efficiencies higher than the structure described above by replacing the bottom Ge junction with a junction made of a different material that produces a higher voltage.
- In addition, it has been suggested that the use of this 1 eV material might be considered as a fourth junction to take advantage of the entire portion of the spectrum lying between 0.7 eV (the band gap for germanium) and 1.1 eV (the upper end of the range of bandgaps for the ˜1 eV layer). See for example, S. R. Kurtz, D. Myers, and J. M. Olson, “Projected Performance of Three and Four-Junction Devices Using GaAs and GaInP,” 26th IEEE Photovoltaics Specialists Conference, 1997, pp. 875-878. Ga1-xInxNyAs1-y has been identified as such a 1 eV material, but currents high enough to match the other subcells have not been achieved, see, e.g., A. J. Ptak et al., Journal of Applied Physics 98 (2005) 094501. This has been attributed to low minority carrier diffusion lengths that prevent effective photocarrier collection. Solar subcell design composed of gallium, indium, nitrogen, arsenic and various concentrations of antimony (GaInNAsSb) has been investigated with the reported outcome that antimony is helpful in decreasing surface roughness and allowing growth at higher substrate temperatures where annealing is not necessary, but the investigators reported that antimony, even in small concentrations is critical to be avoided as detrimental to adequate device performance. See Ptak et al., “Effects of temperature, nitrogen ion, and antimony on wide depletion width GaInNAs,” Journal of Vacuum Science Technology B 25(3) May/June 2007 pp. 955-959. Devices reported in that paper have short circuit currents far too low for integration into multijunction solar cells. Nevertheless, it is known that Ga1-xInxNyAs1-y-zSbz with 0.05≦x≦0.07, 0.01≦y≦0.02 and 0.02≦z≦0.06 can be used to produce a lattice-matched material with a band gap of approximately 1 eV that can provide sufficient current for integration into a multijunction solar cell. However, the voltages generated by subcells containing this material have not exceeded 0.30 V under 1 sun of illumination. See D. B. Jackrel et al., Journal of Applied Physics 101 (114916) 2007. Thus, a triple junction solar cell with this material as the bottom subcell has been expected to be only a small improvement upon an analogous triple junction solar cell with a bottom subcell of Ge, which produces an open circuit voltage of approximately 0.25 V. See H. Cotal et al., Energy and Environmental Science 2 (174) 2009. What is needed is a material that is lattice-matched to Ge and GaAs with a band gap near 1 eV that produces an open circuit voltage greater than 0.30 V and sufficient current to match (Al)InGaP and (In)GaAs subcells. Such a material would also be advantageous as a subcell in high efficiency solar cells with 4 or more junctions.
- According to the invention, an alloy composition is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content as compared with known alloys of GaInNAsSb, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells suitable for use in multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03. These composition ranges employ greater fractions of In and N in GaInNAsSb than previously taught and allow the creation of subcells with bandgaps that are design-tunable in the range of 0.9-1.1 eV, which is the range of interest for GaInNAsSb subcells. This composition range alloy will hereinafter be denoted “low-antimony, enhanced indium-and-nitrogen GaInNAsSb” alloy. Subcells of such an alloy can be grown by molecular beam epitaxy (MBE) and should be able to be grown by metallorganic chemical vapor deposition (MOCVD), using techniques known to one skilled in the art.
- The invention described herein reflects a further refinement of work described in U.S. patent application Ser. No. 12/217,818, including the discovery and identification of specific ranges of elements, i.e., a specific alloy mix of the various elements in GaInNAsSb that improve significantly the performance of the disclosed solar cells.
- The invention will be better understood by reference to the following detailed description in connection with the accompanying drawings.
-
FIG. 1A is a schematic cross-section of a three junction solar cell incorporating the invention. -
FIG. 1B is a schematic cross-section of a four junction solar cell incorporating the invention. -
FIG. 2A is a schematic cross-section of a GaInNAsSb subcell according to the invention. -
FIG. 2B is a detailed schematic cross-section illustrating an example GaInNAsSb subcell. -
FIG. 3 is a graph showing the efficiency versus band gap energy of subcells formed from different alloy materials, for comparison. -
FIG. 4 is a plot showing the short circuit current (Jsc) and open circuit voltage (Voc) of subcells formed from different alloy materials, for comparison. -
FIG. 5 is a graph showing the photocurrent as a function of voltage for a triple junction solar cell incorporating a subcell according to the invention, under 1-sun AM1.5D illumination. -
FIG. 6 is a graph showing the photocurrent as a function of voltage for a triple junction solar cell incorporating a subcell according to the invention, under AM1.5D illumination equivalent to 523 suns. -
FIG. 7 is a graph of the short circuit current (Jsc) and open circuit voltage (Voc) of low Sb, enhanced In and N GaInNAsSb subcells distinguished by the strain imparted to the film by the substrate. -
FIG. 1A is a schematic cross-section showing an example of a triple junctionsolar cell 10 according to the invention consisting essentially of a low Sb, enhanced In and N -
GaInNAsSb subcell 12 adjacent the Ge, GaAs or otherwisecompatible substrate 14 with atop subcell 16 of (Al)InGaP and amiddle subcell 18 using (In)GaAs.Tunnel junction 20 is betweensubcells tunnel junction 22 is betweensubcells subcells - Low Sb, enhanced In and N GaInNAsSb subcells may also be incorporated into multijunction solar cells with four or more junctions without departing from the spirit and scope of the invention.
FIG. 1B shows one such four-junctionsolar cell 100 with a specific low Sb, enhanced In andN GaInNAsSb subcell 12 as the third junction, and with atop subcell 16 of (Al)InGaP, asecond subcell 18 of (In)GaAs and abottom subcell 140 of Ge, which is also incorporated into a germanium (Ge) substrate. Each of thesubcells respective tunnel junctions subcells - By way of further illustration,
FIG. 2A is a schematic cross-section in greater detail of aGaInNAsSb subcell 12, according to the invention. The low Sb, enhanced In andN GaInNAsSb subcell 12 is therefore characterized by its use of low Sb, enhanced In and N GaInNAsSb as thebase layer 220 in thesubcell 12. Other components of theGaInNAsSb subcell 12, including anemitter 26, an optionalfront surface field 28 and backsurface field 30, are preferably III-V alloys, including by way of example GaInNAs(Sb), (In)(Al)GaAs, (Al)InGaP or Ge. The low Sb, enhanced In andN GaInNAsSb base 220 may either be p-type or n-type, with anemitter 26 of the opposite type. - To determine the effect of Sb on enhanced In and N GaInNAsSb subcell performance, various subcells of the type (12) of the structure shown in
FIG. 2B were investigated.FIG. 2B is a representative example of the moregeneral structure 12 inFIG. 2A . Base layers 220 with no Sb, low Sb (0.001≦z≦0.03) and high Sb (0.03≦z≦0.06) were grown by molecular beam epitaxy and were substantially lattice-matched to a GaAs substrate (not shown). These alloy compositions were verified by secondary ion mass spectroscopy. Thesubcells 12 were subjected to a thermal anneal, processed with generally known solar cell processing, and then measured under the AM1.5D spectrum (1 sun) below a filter that blocked all light above the GaAs band gap. This filter was appropriate because aGaInNAsSb subcell 12 is typically beneath an (In)GaAs subcell in a multijunction stack (e.g.,FIGS. 1A and 1B ), and thus light of higher energies will not reach thesubcell 12. -
FIG. 3 shows the efficiencies produced by thesubcells 12 grown with different fractions of Sb as a function of their band gaps. The indium and nitrogen concentrations were each in the 0.07 to 0.18 and 0.025 to 0.04 ranges, respectively. It can be seen that the low Sb, enhanced In and N GaInNAsSb subcells (represented by triangles) have consistently higher subcell efficiencies than the other two candidates (represented by diamonds and squares). This is due to the combination of high voltage and high current capabilities in the low Sb, enhanced In and N GaInNAsSb devices. (SeeFIG. 4 ). As can be seen inFIG. 4 , both the low and high concentration Sb devices have sufficient short-circuit current to match high efficiency (Al)InGaP subcells and (In)GaAs subcells (>13 mA/cm2 under the filtered AM1.5D spectrum), and thus they may be used in typical three junction or four junctionsolar cells - The devices without Sb have relatively high subcell efficiencies due to their high open circuit voltages, but their short circuit currents are too low for high efficiency multijunction solar cells, as is shown in
FIG. 4 . -
FIG. 4 also confirms that Sb has a deleterious effect on voltage, as previously reported for other alloy compositions. However, in contrast to what has been previously reported for other alloy compositions, the addition of antimony does NOT decrease the short circuit current. The low Sb-type subcells have roughly 100 mV higher open-circuit voltages than the high Sb-type subcells. To illustrate the effect of this improvement, a triple junctionsolar cell 10 with an open circuit voltage of 3.1 V is found to have 3.3% higher relative efficiency compared to an otherwise identical cell with an open circuit voltage of 3.0 V. Thus, the inclusion of Sb in GaInNAs(Sb) solar cells is necessary to produce sufficient current for a high efficiency solar cell, but only by using low Sb (0.1-3%) can both high voltages and high currents be achieved. - Compressive strain improves the open circuit voltage of low Sb, enhanced In and N GaInNAsSb subcells 10, 100. More specifically, low Sb, enhanced In and N GaInNAsSb layers 220 that have a lattice constant larger than that of a GaAs or Ge substrate when fully relaxed (≦0.5% larger), and are thus under compressive strain when grown pseudomorphically on those substrates. They also give better device performance than layers with a smaller, fully relaxed lattice constant (under tensile strain).
-
FIG. 7 shows the short circuit current and open circuit voltage of low Sb, enhanced In and N GaInNAsSb subcells grown on GaAs substrates under compressive strain (triangles) and tensile strain (diamonds). It can be seen that the subcells under compressive strain have consistently higher open circuit voltages than those under tensile strain. - Low Sb, enhanced In and N, compressively-strained GaInNAsSb subcells have been successfully integrated into high efficiency multijunction solar cells.
FIG. 5 shows a current-voltage curve of a triple junction solar cell of the structure inFIG. 1A under AM1.5D illumination equivalent to 1 sun. The efficiency of this device is 30.5%.FIG. 6 shows the current-voltage curve of the triple junction solar cell operated under a concentration equivalent to 523 suns, with an efficiency of 39.2%. - The invention has been explained with reference to specific embodiments. Other embodiments will be evident to those of ordinary skill in the art. It is therefore not intended for the invention to be limited, except as indicated by the appended claims.
Claims (9)
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US20150122318A1 (en) | 2015-05-07 |
US20150027520A1 (en) | 2015-01-29 |
US20150214412A1 (en) | 2015-07-30 |
US20130130431A1 (en) | 2013-05-23 |
KR20130018283A (en) | 2013-02-20 |
US9252315B2 (en) | 2016-02-02 |
US9985152B2 (en) | 2018-05-29 |
EP3471149A1 (en) | 2019-04-17 |
US20160111569A1 (en) | 2016-04-21 |
US9018522B2 (en) | 2015-04-28 |
US20130220409A1 (en) | 2013-08-29 |
CN203707143U (en) | 2014-07-09 |
US8575473B2 (en) | 2013-11-05 |
US20170110607A1 (en) | 2017-04-20 |
US20130014815A1 (en) | 2013-01-17 |
EP2553731B1 (en) | 2019-01-23 |
ES2720596T3 (en) | 2019-07-23 |
WO2011123164A1 (en) | 2011-10-06 |
EP2553731A4 (en) | 2016-09-07 |
SG10201503386SA (en) | 2015-06-29 |
AU2010349711A1 (en) | 2012-11-08 |
EP2553731A1 (en) | 2013-02-06 |
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