US20110168261A1 - High transmittance optical windows and method of constructing the same - Google Patents

High transmittance optical windows and method of constructing the same Download PDF

Info

Publication number
US20110168261A1
US20110168261A1 US12/946,580 US94658010A US2011168261A1 US 20110168261 A1 US20110168261 A1 US 20110168261A1 US 94658010 A US94658010 A US 94658010A US 2011168261 A1 US2011168261 A1 US 2011168261A1
Authority
US
United States
Prior art keywords
coating
refractive index
multiple layer
transparent substrate
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/946,580
Inventor
Roger E. Welser
Ashok K. Sood
David J. Poxson
Sameer Chhajed
Frank W. Mont
Jaehee Cho
E. Fred Schubert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rensselaer Polytechnic Institute
Magnolia Solar Inc
Magnolia Optical Technologies Inc
Original Assignee
Rensselaer Polytechnic Institute
Magnolia Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytechnic Institute, Magnolia Solar Inc filed Critical Rensselaer Polytechnic Institute
Priority to US12/946,580 priority Critical patent/US20110168261A1/en
Assigned to MAGNOLIA OPTICAL TECHNOLOGIES, INC. reassignment MAGNOLIA OPTICAL TECHNOLOGIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SOOD, ASHOK K., WELSER, ROGER E.
Assigned to RENNSELAER POLYTECHNIC INSTITUTE reassignment RENNSELAER POLYTECHNIC INSTITUTE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHHAJED, SAMEER, CHO, JACHEE, MONT, FRANK W., POXSON, DAVID J., SCHUBERT, E. FRED
Publication of US20110168261A1 publication Critical patent/US20110168261A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • G02B1/115Multilayers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236Superlattices; Multiple quantum well structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236Superlattices; Multiple quantum well structures
    • H01L31/035263Doping superlattices, e.g. nipi superlattices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/0481Encapsulation of modules characterised by the composition of the encapsulation material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725Multiple junction or tandem solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0304Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/065Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/544Solar cells from Group III-V materials

Definitions

  • This invention relates to transparent optical windows for detectors, sensors, and other optical devices; and to semiconductor-based photovoltaic energy converters, also known as “solar cells,” and to the design and fabrication of the same.
  • Transparent windows are employed in a wide range of military and commercial applications, including optical lenses and photovoltaic cover glass.
  • Glass, sapphire, and quartz are well-known materials used to form high transmittance optical windows for a wide range of applications. Because these materials have very low absorption coefficients over a wide range of photon energies, optical transmittance through glass, sapphire, and quartz windows is typically limited by reflection losses.
  • Fresnel reflection losses in optical windows arise from the difference in index of refraction between air (n ⁇ 1) and the window material (n ⁇ 1.4-1.8). Although Fresnel reflection losses are typically relatively low at normal incidence, they can become quite substantial for off-angle light incidence. For example, Fresnel reflection from uncoated glass generally varies from over 4% at normal incidence to as much as 40% at an incident angle of 75°.
  • Reducing optical reflection from surfaces is highly desirable to many applications in optics. Reducing reflection is commonly achieved through coating or texturing the surface of interest. Numerous applications involving dielectric or semiconducting materials use the light that is transmitted through the material's surface. Examples of such an application are optical lenses, windows, photovoltaic devices, and photodetectors. Glass (amorphous SiO 2 ) is an example of a dielectric material widely used in a variety of optical applications (e.g. lenses, windows) and as a cover or encapsulation for semiconductor optoelectronic devices.
  • Glass is completely transparent for wavelengths longer than 400 nm. However, due to Fresnel reflection, it reflects about 4% of the incident light from its surface ( ⁇ 8% from two surfaces). This reflection is undesirable in many applications as it can degrade the efficiency of the underlying device (e.g. efficiency of a solar photovoltaic cell), reduce signal-to-noise ratio (e.g. in a photodetector), and cause glare (e.g. from LCD screens, computer monitors, and televisions). For these applications, it is desirable not only to reduce reflectance but also to improve transmittance through the surface, which is achieved through a coating material that is non-absorbing and a coating surface that is specular.
  • a single-layer coating with optical thickness equal to one quarter of the wavelength ( ⁇ /4) of interest has been used as an AR coating.
  • such single-layer ⁇ /4 AR coating should have a refractive index, n ⁇ /4 as given by
  • This invention overcomes the disadvantages of the prior art by providing antireflection structures and a method of manufacturing the antireflection structures to increase the transmittance through a variety of different optical windows for a variety of applications.
  • the various illustrative embodiments reduce reflection losses, thus maximizing transmittance through optical windows.
  • the various illustrative embodiments utilize multiple layer optical coatings in which the refractive index is varied between that of the window material and air in discrete steps. It is possible to design antireflection (AR) coatings that, due to interference effects, have a lower reflectivity than a continuously graded AR coating.
  • AR antireflection
  • the optical antireflection coating comprised of at least two layers, up to any plurality of layers, which have a similar chemical composition but a different porosity and thus a different refractive index.
  • the optical antireflection coating contains (i) at least one layer of the AR coating comprising a single dense material, (ii) at least one layer of the AR coating comprising a solid solution of two different dense materials (that is a mixture of two dense materials), and (iii) at least one layer of the AR coating comprising a porous material.
  • a pore-closure layer is employed that covers the top surface and prevents moisture, or particles, from infiltrating the porous film.
  • the pore-closure layer is very thin (much smaller than ⁇ ) so as to be applied without influencing the reflectivity of the AR coating. More particularly, the pore closure layer is constructed and arranged to avoid negatively affecting the reflectivity.
  • a high transmittance window comprises a transparent substrate coated on both sides with a multiple layer coating, such that each multiple layer coating comprises a plurality of optical films.
  • the multiple layer coating defines a refractive index intermediate between the refractive index of the transparent substrate and air.
  • the window can comprise, but is not limited to, glass, quartz, and sapphire materials.
  • the multiple layer coating can comprise a plurality of various optical thin film materials, including but not limited to, SiO 2 , TiO 2 , Si 3 N 4 , BaF 2 , CdTe, and diamond like carbon materials.
  • Conductive, transparent coatings can be formed by using transparent conductive oxide (TCO) materials such as indium tin oxide (ITO) and zinc oxide (ZnO).
  • the individual layers in the optical coating can comprise a single material of varying porosity, or of a solid solution of two different, dense materials, or any combination thereof.
  • the window material comprises sapphire and the index of refraction in each coating is varied from 1.5 to 1.1 over two steps, with the plurality of deposited layers defining approximately 230 nm of dense SiO 2 (n ⁇ 1.46) and approximately 300 nm of porous SiO 2 (n ⁇ 1.18).
  • a plurality of antireflection layers of transparent refractive thin film are deposited on the front, sun-facing surface of a photovoltaic device.
  • the purpose of the antireflection layers is to maximize the number of incident photons that are directed into the active region of an underlying semiconductor solar cell device.
  • the antireflection structure is formed of multiple layers of optical thin film material on top of a transparent cover glass, while having an index of refraction intermediate between that of the glass and air.
  • the profile is characterized by a step-graded profile that may or may not follow a quintic profile to provide maximum photon transmission through the antireflection layers.
  • the exact thickness and index of refraction of each of the layers in the antireflection layer can be adjusted to further minimize reflection losses over a broad spectrum of photon wavelengths and angles of incidence.
  • the antireflection coating can be built using a variety of different materials, either in combination or with various degrees of porosity, including but not limited to, SiO 2 , TiO 2 , Si 3 N 4 , BaF 2 , CdTe, ITO or other TCO materials, and diamond like carbon materials.
  • the index of refraction in the topmost coating is varied from 1.5 to 1.1 over three steps, with the plurality of deposited layers defining approximately 192 nm of porous SiO 2 (n ⁇ 1.36), approximately 179 nm of porous SiO 2 (n ⁇ 1.19), and approximately 260 nm of porous SiO 2 (n ⁇ 1.10).
  • a method of constructing the improved antireflection structures described herein comprises coating the top and sometimes also the bottom surfaces of a transparent window with nanostructured optical coatings.
  • the nanostructured optical coatings can be applied using the oblique angle deposition material synthesis technique.
  • a transparent substrate is provided having a front surface and a back surface.
  • the transparent substrate is then coated on at least one surface with a multiple layer (“multi-layer”) coating comprising a plurality of optical films, and the multi-layer coating defining a refractive index intermediate between the refractive index of the transparent substrate and the refractive index of air.
  • the coating can be performed by depositing porous SiO 2 layers using oblique-angle deposition.
  • the coating can also be performed by depositing layers comprising SiO 2 , TiO 2 , Si 3 N 4 , BaF 2 , CdTe and diamond like carbon materials using oblique angle deposition.
  • the coating is applied to the front surface after forming a thin film solar cell device on the back surface of the transparent substrate.
  • FIG. 1 is a schematic side cross-sectional view of a double-side coated optical window, according to an illustrative embodiment
  • FIG. 2 is a graph showing index of refraction versus position for a two-layered step-graded antireflection coating structure on a sapphire window to enhance optical transmission into or out of the window, according to the illustrative embodiment
  • FIG. 3 is a graph showing measured transmittance through an uncoated sapphire window and through a sapphire window coated on both sides with a 2-layer AR structure, according to the illustrative embodiment
  • FIG. 4 is a graph showing index of refraction versus position for a three-layered step-graded antireflection coating structure on a glass window to enhance optical transmission into or out of the window, according to the illustrative embodiment
  • FIG. 5 is a graph showing measured transmittance through an uncoated glass slide and through a glass side coated on one and both sides with a 3-layer AR structure, according to the illustrative embodiment
  • FIG. 6 is a graph showing index of refraction versus position for a four-layered step-graded antireflection coating structure on a glass window to enhance optical transmission into or out of the window, according to the illustrative embodiment.
  • FIG. 7 is a schematic side cross sectional view of a photovoltaic device employing a step-graded antireflection coating on the top side of a glass window covering a semiconductor device structure, configured and arranged to face the sun to enhance optical transmission of photon energies into the active regions of the underlying solar cell, according to an illustrative embodiment.
  • Ultra-high, broadband transmittance through coated glass windows is demonstrated over a wide range of incident angles.
  • the measured improvements in transmittance result from coating the windows with materials consisting of porous nanorods.
  • porous nano-materials fabricated by, for example, oblique-angle deposition enables a tunable refractive index, flexibility in choice of material, simplicity of a physical vapor deposition process, and the ability to optimize the coating for any substrate-ambient material system.
  • a multi-layer coating adapted for a glass substrate is fabricated and characterized as described below.
  • the refractive index of the layers is step-graded (i.e. decreased in discrete steps), from the substrate value, 1.46, to a value of 1.18, according to the various illustrative embodiments.
  • FIG. 1 details a cross-sectional view illustrating a high transmittance window structure 100 comprising a transparent optical window 120 having an antireflection structure 110 and 130 coated, respectively, on the front and back sides.
  • the front coating 110 is deposited on a device window 120 configured and arranged to face a light source, which provides a readily available source of photons 140 .
  • the front coating 110 is a multiple-layer coating comprising a plurality of optical films, and the multiple-layer coating defines an index of refraction between air 150 and the window 120 .
  • the multi-layer coating can comprise two, three, or more layers, up to a plurality of layers, defining refractive indices as appropriate to achieve the desired transmittance. Refer to FIGS.
  • a back coating 130 is applied to the back side of the window 120 and comprises materials possessing indices of refraction between that of the window 120 and air 150 .
  • photons 140 are illustratively shown as a series of a single direction of photon stream, it should be clear to those skilled in the art that the various, illustrative, and alternate embodiments will function with various varying degrees and/or amount of incident of light or source of photon energies.
  • front coating 110 and back coating 130 are configured and arranged with transparent antireflection coating structures to reduce the reflection of incident photons at the material interface between air 150 and the window 120 .
  • front coating 110 and back coating 130 are implemented in accordance with industry standard processes and materials known to those skilled in the art.
  • Transparent antireflection coating structures can comprise a single layer or multiple layers of materials having an index of refraction intermediate between the window 120 and the media in which the incident photons are delivered, which by way of example is illustrated as air 150 in FIG. 1 .
  • Single-layer transparent antireflection coating structures are generally characterized by enhanced transmittance around a single wavelength of light when the light is at normal incidence to the transparent antireflection coating structure surface.
  • graded-index coatings with variable-index profiles are utilized.
  • a quintic profile is illustrated at near optimum profile for a graded-index antireflection coating (see, for example, by way of useful background information, U.S. Pat. No. 4,583,822, entitled QUINTIC REFRACTIVE INDEX PROFILE ANTIREFLECTION COATINGS, by W. H. Southwell, the teachings of which are expressly incorporated herein by reference as useful background information).
  • the various illustrative and alternate embodiments utilize optical materials with very low refractive indices that closely match the refractive index of air, which historically have not been utilized.
  • Oblique-angle deposition is utilized as an effective technique for tailoring the refractive index of a variety of thin film materials (see for example, by way of useful background, J.-Q. Xi, M. F. Schubert, J. K. Kim, E. F. Schubert, M. Chen, S.-Y. Lin, W. Liu, and J. A. Smart, Optical Thin - Film Materials with Low Refractive Index for Broad - Band Elimination of Fresnel Reflection , Nat. Photon., vol. 1, pp. 176-179, 2007).
  • Oblique-angle deposition is a method of growing nanostructured, porous thin films, and hence thin films with low-refractive index (low-n), enabled by surface diffusion and self-shadowing effects during the deposition process.
  • low-n low-refractive index
  • random growth fluctuations on the substrate produce a shadow region that incident vapor flux cannot reach, and a non-shadow region where incident flux deposits preferentially, thereby creating an oriented rod-like structure with high porosity.
  • the deposition angle defined as the angle between the normal to the sample surface and the incident vapor flux, results in the formation of nanorod structures that are tilted relative to the sample surface.
  • the nanostructured layers act as a single homogeneous film with a refractive index intermediate between air and the nanorod material, decreasing in refractive index with increasing porosity.
  • both conducting and non-conducting graded-index antireflection coatings that are broadband and Omni-directional have been demonstrated using this deposition technique.
  • both oblique angle deposition and co-sputtering are material synthesis techniques that can be used to construct multiple layer, graded refractive index coatings to minimize reflection losses.
  • the teachings of this patent are expressly incorporated herein by reference as useful background information. It is contemplated in illustrative embodiments that these processes can be adapted to minimize reflection losses for optical windows.
  • the refractive index of a front coating 110 and/or a back coating 130 on a window 120 is shown in the graph of FIG. 2 according to an illustrative embodiment.
  • One example of step graded profile 210 is shown, along with a continuously varying quintic profile 200 of the index of refraction approximated as taught in U.S. Pat. No. 4,583,822, which is incorporated by reference as useful background information.
  • the index of refraction herein referred to as “n” is varied from that of the window 120 , which in this case is composed of transparent sapphire material 220 having a reflection value “n” of approximately 1.77, to that of air 150 , which is shown by way of example to be approximately 1.
  • Fresnel reflection from one surface of uncoated sapphire generally varies from approximately 8% at normal incidence to up to approximately 50% at an incident angle of 75°. While dense SiO 2 is an optically transparent material, it has an index of refraction comparable to common silicon encapsulants (n ⁇ 1.47). Thus, in conventional implementations, SiO 2 is not typically used to reduce reflection losses. However, according to the illustrative embodiment, oblique angle deposition is employed to produce porous SiO 2 layer with lower index of refraction.
  • the index of refraction of the front coating 110 is varied from 1.77 to 1 over two discrete steps which can comprise a first approximately 230 nm layer 230 of dense SiO 2 material (n ⁇ 1.46) and a second approximately 300 nm layer 240 of porous SiO 2 material (n ⁇ 1.18).
  • all layers of a multi-layer AR coating are constructed from a single material, porous silica (porous SiO 2 ), according to the illustrative embodiment.
  • Silica is particularly adept for use as AR coating on a glass, quartz, or sapphire substrate, as it is native, stable and robust.
  • SiO 2 coatings are well known for their long-term stability and high transmittance over a wide spectral range.
  • dense SiO 2 has a refractive index of approximately 1.46, and thus is not an effective antireflection material for glass windows with a refractive index of approximately 1.5.
  • the refractive index of porous SiO 2 can be reduced to values of 1.1 or lower by increasing the porosity. Oblique angle deposition enables the creation of a wide variety of step graded refractive index structures.
  • This particular combination of index of refraction and layer thicknesses illustratively provides an appropriate approximation of the quintic profile 200 , as shown in the graph of FIG. 2 .
  • the thickness as well as the porosity of each layer in the multi-layer graded index AR coating is permitted to vary.
  • the coatings are optimized in the wavelength range of 400 nm to 2500 nm, and the angle of incidence ranges from 0° to 40°.
  • the thickness and refractive index values of each coating can be measured using any conventional technique known to those of ordinary skill, including variable angle spectroscopic ellipsometry and scanning electron microscopy, among others.
  • FIG. 3 shows a graph that compares the measured transmittance of an uncoated sapphire (without AR) to sapphire coated on two sides with a two-layered, nanostructured SiO 2 AR coating.
  • the samples were prepared in an electron-beam evaporator using two different deposition angles ( ⁇ 0° and 60°).
  • a sacrificial silicon substrate was placed alongside the sapphire windows during each deposition step.
  • the thickness and refractive index of the single layer films on silicon were measured with an ellipsometry-based measurement system.
  • the transmittance of the coated and uncoated glass slides was then measured using an angle and wavelength dependent transmittance measurement setup.
  • the measurement setup for characterizing transmittance versus wavelength includes a Xenon lamp light source and an Ando AQ6315A optical spectrum analyzer.
  • the spectrum analyzer is calibrated to detect transmitted photons over a broadband spectrum (400 nm-1800 nm).
  • the measured peak transmittance of the uncoated glass slide is approximately 88%, in-line with the expected approximate 6-7% reflection loss at each glass/air interface.
  • the peak transmittance increases to over 98% for the double-sided coated samples.
  • the transmittance of the double-sided two-layer antireflection coating is also significantly higher than the sample without antireflection coating across a wide range of incident angles. While the transmittance of the uncoated sapphire falls to below 80% at an incident angle of approximately 60°, the sapphire with the double-sided coating still maintains at a transmittance above 92%.
  • the measured average transmittance of the sample with double-sided 2-layer antireflection coatings is 97% (between 0° and 75° and between 400 nm and 1600 nm), which represents tremendous increase over the 86% average transmittance of the uncoated reference sample.
  • the refractive index of a front coating 110 or a back coating 130 on a window 120 is shown in the graph of FIG. 4 according to an illustrative embodiment in which the window material is glass and the coating comprises SiO 2 of varying porosity.
  • One example of step graded profile 410 is shown, along with a continuously varying quintic profile 400 of the index of refraction approximated as taught in U.S. Pat. No. 4,583,822, which is incorporated by reference as useful background information.
  • the index of refraction is varied from that of the window 120 , which in this case is composed of transparent glass material 420 having a reflection value “n” of approximately 1.5, to that of air 150 , which is shown by way of example to be approximately 1.
  • the Fresnel reflection from one surface of uncoated glass generally varies from approximately 4% at normal incidence to up to approximately 40% at an incident angle of 75°.
  • oblique angle deposition is employed to produce a porous SiO 2 layer with a lower index of refraction.
  • the index of refraction of front coating 110 is varied from 1.5 to 1 over three discrete steps, which can comprise one 192 nm layer optical material 430 having a refractive index of n ⁇ 1.36, a second 179 nm layer of optical material 440 having a refractive index of n ⁇ 1.19, and a third 260 nm layer of optical material 450 having a refractive index of n ⁇ 1.10.
  • This particular combination of index of refraction and layer thicknesses illustratively provides an appropriate approximation of the quintic profile 200 , as shown in the graph of FIG. 2 . It should be clear to those skilled in the art that the number of discrete steps and the illustrated refraction index are only shown for illustrative purposes and that the number of discrete steps and various values of refractive index can be varied according to the various embodiments.
  • FIG. 5 shows a graph that compares the measured transmittance of an uncoated glass slide to the measured transmittance of glass slides coated on either one side, or two sides, with a three-layered, nanostructured SiO 2 coating.
  • the samples were prepared in an electron-beam evaporator using three different deposition angles ( ⁇ 60°, 72°, and 80° respectively).
  • a sacrificial silicon substrate was placed alongside the glass slides during each deposition step.
  • the thickness and refractive index of the single layer films on silicon were measured with an ellipsometry-based measurement system, yielding layers with n ⁇ 1.10, 1.22, and 1.36 at a wavelength of 460 nm.
  • the transmittance of the coated and uncoated glass slides was then measured using an angle and wavelength dependent transmittance measurement setup.
  • the measurement setup for characterizing transmittance versus wavelength includes a Xenon lamp light source and an Ando AQ6315A optical spectrum analyzer.
  • the spectrum analyzer is calibrated to detect transmitted photons over a broadband spectrum (400 nm-1800 nm).
  • the measured broadband transmittance of the uncoated glass slide is approximately 92% at normal incidence, which is expected given the approximate 4% reflection loss at each glass/air interface.
  • the broadband transmittance at normal incidence increases to over 96% and 98%, respectively, for the single- and double-sided coated samples.
  • the glass slide with the double-sided coating While the transmittance of the uncoated glass slide falls to below 80% at an incident angle of 65°, the glass slide with the double-sided coating still maintains a transmittance above 95%.
  • the measured average transmittance of the sample with double-sided double-layer antireflection coatings is 97% (between 0° and 75° and between 400 nm and 1600 nm), which represents tremendous increase relative to the 86% average transmittance of the uncoated reference sample.
  • SiO 2 materials have been employed for the coating material because of its high transmission and stability.
  • Window material can include quartz, glass, and sapphire.
  • Additional optical material can also be employed in step graded AR coatings on optical windows, including SiO 2 , TiO 2 , Si 3 N 4 , BaF 2 , CdTe, and diamond like carbon materials.
  • Conductive, transparent coatings can be formed by using transparent conductive oxide (TCO) materials such as indium tin oxide (ITO).
  • TCO transparent conductive oxide
  • ITO indium tin oxide
  • the individual layers in the optical coating can comprise a single material of varying porosity, or of a solid solution of two different, dense materials, or any combination thereof.
  • a variety of different index profiles can be employed, using two, three, four, or more index steps.
  • index steps and individual layer thickness can be adjusted to approximate a continuous graded profile
  • the index versus thickness profile can deviate from that of a continuously graded profile in order to take advantage of interference phenomena.
  • the index step profile can be altered to minimize reflections and maximize transmittance through the optical window over specific spectral regions or incidence angles.
  • the refractive index of a front coating 110 or a back coating 130 on a window 120 is shown in the graph of FIG. 6 , according to another illustrative embodiment.
  • One example of step graded profile 610 is shown, along with a continuously varying quintic profile 600 of the index of refraction approximated as taught in U.S. Pat. No. 4,583,822, which is incorporated by reference as useful background information.
  • the index of refraction herein referred to as “n”
  • n is varied from that of the window 120 , which in this case is composed of transparent glass material 220 having a reflection value “n” of approximately 1.5, to that of air 150 , which is shown by way of example to be approximately 1.
  • Layer 6 depicts a profile for a four-layered coating in which Layer 1 630 comprises a 70 nm layer having a refractive index of n ⁇ 1.43, Layer 2 640 comprises a 90 nm layer having a refractive index of n ⁇ 1.37, Layer 3 650 comprises a 150 nm layer having a refractive index of n ⁇ 1.26, and Layer 4 660 comprises a 350 nm layer having a refractive index of n ⁇ 1.09.
  • the index of refraction of front coating 110 is varied from 1.5 to 1 over four discrete steps, which can comprise one 75 nm layer optical material 630 having a refractive index of n ⁇ 1.35, a second 100 nm layer of optical material 640 having a refractive index of n ⁇ 1.29, third 160 nm layer of optical material 650 having a refractive index of n ⁇ 1.20, and a forth 210 nm layer of optical material 660 having a refractive index of n ⁇ 1.09. It should be clear to those skilled in the art that the number of discrete steps and the illustrated refraction index are only shown for illustrative purposes and that the number of discrete steps and various values of refractive index can be varied according to the various embodiments.
  • a pore-closure layer is employed that covers the top surface and does not allow moisture, or particles, to enter the porous film.
  • the pore-closure layer is very thin (much smaller than ⁇ ) so that it does not influence the AR coating in terms of its reflectivity. That is, the pore closure layer does not affect the reflectivity in a negative way.
  • the topmost, low-index layer in the AR coating can be capped with a thin ( ⁇ 10 nm), dense layer of SiO 2 .
  • FIG. 7 details a cross sectional view illustrating a partial photovoltaic structure 700 comprising a semiconductor solar cell device structure 740 with a bottom contact 750 .
  • An intermediate layer 730 connects the semiconductor device structure 740 to a glass cover 720 .
  • the photovoltaic structure 700 includes an antireflection structure 710 to enhance photon absorption within the active region of the semiconductor structure 740 .
  • a front coating 710 is deposited on a device covered by a glass window 720 configured and arranged in a photovoltaic (PV) system arranged to face the sun, which provides a readily available source of photon energies 760 to the PV system.
  • the front coating 710 is comprised of materials possessing optical characteristics having index of refractions between air 770 and the glass window 720 . Refer to FIGS. 4 and 6 showing examples of the refractive index.
  • photons 760 are illustratively shown as a series of a single direction of photon stream, it should be clear to those skilled in the art that the various, illustrative, and alternate embodiments will function with various varying degrees and/or amount of incident of light or source of photon energies.
  • a multi-layer, broadband, omnidirectional AR coating made of a single material having tailored-refractive-index layers on a glass substrate reduced reflectance while improving optical transmittance.
  • the availability of the nanostructured low-n material and tunable-n materials deposited by using oblique-angle deposition has allowed the fabrication of highly effective AR coatings for low index substrates such as glass.
  • Antireflection coatings consisting of three layers of nanostructured SiO 2 have been shown to significantly increase the transmittance of optical glass windows. Double-sided coatings have achieved average transmittance values in excess of 98% over a broad spectrum and range of incident angles, which has benefits for a wide variety of specialized commercial and military optical window applications.
  • single-sided, step graded-refractive index coatings can benefit from crystalline silicon or thin film photovoltaic systems which employ either a top cover glass or a glass superstrate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

Designs for ultra-high, broadband transmittance through windows over a wide range of incident angles are disclosed. The improvements in transmittance result from coating the windows with a new class of materials consisting of porous nanorods. A high transmittance optical window comprises a transparent substrate coated on one or both sides with a multiple layer coating. Each multiple layer coating includes optical films with a refractive index intermediate between the refractive index of the transparent substrate and air. The optical coatings are applied using an oblique-angle deposition material synthesis technique. The coating can be performed by depositing porous SiO2 layers using oblique angle deposition. The high transmittance window coated with the multiple layer coating exhibits reduced reflectance and improved transmittance, as compared to an uncoated transparent substrate.

Description

    RELATED APPLICATIONS
  • This application claims the benefit of co-pending U.S. Provisional Patent Application Ser. No. 61/293,469, filed on Jan. 8, 2010 entitled EFFICIENT SOLAR CELL EMPLOYING MULTIPLE ENERGY-GAP LAYERS AND LIGHT-SCATTERING STRUCTURES AND METHODS FOR CONSTRUCTING THE SAME, which is expressly incorporated herein by reference.
  • GOVERNMENT SUPPORT
  • This invention was supported in part by Small Business Innovative Research (SBIR) contract # W31P4Q-08-C-0300 from the Defense Advanced Research Projects Agency (DARPA) to Magnolia Optical Technologies, Inc., 52 B Cummings Park, Suite 314, Woburn, Mass. 01801. The government may have certain rights in this invention.
  • FIELD OF THE INVENTION
  • This invention relates to transparent optical windows for detectors, sensors, and other optical devices; and to semiconductor-based photovoltaic energy converters, also known as “solar cells,” and to the design and fabrication of the same.
  • BACKGROUND OF THE INVENTION
  • Transparent windows are employed in a wide range of military and commercial applications, including optical lenses and photovoltaic cover glass. Glass, sapphire, and quartz are well-known materials used to form high transmittance optical windows for a wide range of applications. Because these materials have very low absorption coefficients over a wide range of photon energies, optical transmittance through glass, sapphire, and quartz windows is typically limited by reflection losses. Fresnel reflection losses in optical windows arise from the difference in index of refraction between air (n˜1) and the window material (n˜1.4-1.8). Although Fresnel reflection losses are typically relatively low at normal incidence, they can become quite substantial for off-angle light incidence. For example, Fresnel reflection from uncoated glass generally varies from over 4% at normal incidence to as much as 40% at an incident angle of 75°.
  • Reducing optical reflection from surfaces is highly desirable to many applications in optics. Reducing reflection is commonly achieved through coating or texturing the surface of interest. Numerous applications involving dielectric or semiconducting materials use the light that is transmitted through the material's surface. Examples of such an application are optical lenses, windows, photovoltaic devices, and photodetectors. Glass (amorphous SiO2) is an example of a dielectric material widely used in a variety of optical applications (e.g. lenses, windows) and as a cover or encapsulation for semiconductor optoelectronic devices.
  • Glass is completely transparent for wavelengths longer than 400 nm. However, due to Fresnel reflection, it reflects about 4% of the incident light from its surface (−8% from two surfaces). This reflection is undesirable in many applications as it can degrade the efficiency of the underlying device (e.g. efficiency of a solar photovoltaic cell), reduce signal-to-noise ratio (e.g. in a photodetector), and cause glare (e.g. from LCD screens, computer monitors, and televisions). For these applications, it is desirable not only to reduce reflectance but also to improve transmittance through the surface, which is achieved through a coating material that is non-absorbing and a coating surface that is specular.
  • Conventionally, a single-layer coating with optical thickness equal to one quarter of the wavelength (λ/4) of interest has been used as an AR coating. Preferably, such single-layer λ/4 AR coating should have a refractive index, nλ/4 as given by

  • n λ/4−√{square root over (n substrate ×n air)}.
  • Often due to unavailability of materials with the desired, exact value of the refractive index, the performance of such λ/4 AR coatings deviates from the optimum. This is especially the case for low-index substrates, such as glass. An ideal single-layer λ/4 AR coating on glass surface in an air ambient would require a material with refractive index of (1.46)1/2≈1.2. There is no conventional inorganic material that has such a low refractive index. Also, fundamentally, these single-layer λ/4 AR coatings can minimize reflection only for one specific wavelength at normal incidence and they are inherently unable to exhibit spectrally broadband reduction in reflectance over wide range of angles-of-incidence.
  • In 1880, Lord Rayleigh mathematically demonstrated that graded-refractive-index layers have broadband antireflection properties. Multi-layer stacks of materials with different refractive indices have been used in order to achieve broadband reduction in reflection. Anti-reflection (AR) coatings with specular surface made of multiple discrete layers of non-absorbing materials can exploit thin film interference effects to reduce the reflectance while improving transmittance.
  • Optimization of multi-layer AR coatings is a difficult challenge because of the extremely large and complex dimensional space of possible solutions. Analytical methods to optimize AR coatings are not feasible due to the complexity of the problem. Heuristic methods such as needle-optimization, jump-elimination, and genetic algorithm are commonly used. It is desirable to provide a computational genetic algorithm method to achieve optimization of the coatings.
  • Theoretically, it has been known for some time that Fresnel reflection losses can be minimized between two media by varying the index of refraction across the interface. Until recently, however, the unavailability of materials with desired refractive indices, particularly materials with very low refractive indices below n=1.2, prevented the implementation of high-performance step graded refractive index designs. Recently, however, Prof. Fred Schubert and his group at Rensselear Polytechnic Institute (RPI) have created a new class of materials comprising porous nanorods. In particular, the RPI group has demonstrated that oblique-angle deposition can be used to tailor the refractive index of a wide variety of thin film materials. Therefore it is desirable to apply this new material synthesis technique to the formation of coatings that can minimize reflection losses and maximize the transmittance through a wide variety of optical windows.
  • SUMMARY OF THE INVENTION
  • This invention overcomes the disadvantages of the prior art by providing antireflection structures and a method of manufacturing the antireflection structures to increase the transmittance through a variety of different optical windows for a variety of applications. The various illustrative embodiments reduce reflection losses, thus maximizing transmittance through optical windows. The various illustrative embodiments utilize multiple layer optical coatings in which the refractive index is varied between that of the window material and air in discrete steps. It is possible to design antireflection (AR) coatings that, due to interference effects, have a lower reflectivity than a continuously graded AR coating. In one embodiment, the optical antireflection coating comprised of at least two layers, up to any plurality of layers, which have a similar chemical composition but a different porosity and thus a different refractive index. In another embodiment, the optical antireflection coating contains (i) at least one layer of the AR coating comprising a single dense material, (ii) at least one layer of the AR coating comprising a solid solution of two different dense materials (that is a mixture of two dense materials), and (iii) at least one layer of the AR coating comprising a porous material. In yet another embodiment, a pore-closure layer is employed that covers the top surface and prevents moisture, or particles, from infiltrating the porous film. The pore-closure layer is very thin (much smaller than λ) so as to be applied without influencing the reflectivity of the AR coating. More particularly, the pore closure layer is constructed and arranged to avoid negatively affecting the reflectivity.
  • In the illustrative embodiment, a high transmittance window comprises a transparent substrate coated on both sides with a multiple layer coating, such that each multiple layer coating comprises a plurality of optical films. The multiple layer coating defines a refractive index intermediate between the refractive index of the transparent substrate and air. The window can comprise, but is not limited to, glass, quartz, and sapphire materials. The multiple layer coating can comprise a plurality of various optical thin film materials, including but not limited to, SiO2, TiO2, Si3N4, BaF2, CdTe, and diamond like carbon materials. Conductive, transparent coatings can be formed by using transparent conductive oxide (TCO) materials such as indium tin oxide (ITO) and zinc oxide (ZnO). The individual layers in the optical coating can comprise a single material of varying porosity, or of a solid solution of two different, dense materials, or any combination thereof. In a specific embodiment, the window material comprises sapphire and the index of refraction in each coating is varied from 1.5 to 1.1 over two steps, with the plurality of deposited layers defining approximately 230 nm of dense SiO2 (n˜1.46) and approximately 300 nm of porous SiO2 (n˜1.18).
  • In another illustrative embodiment, a plurality of antireflection layers of transparent refractive thin film are deposited on the front, sun-facing surface of a photovoltaic device. The purpose of the antireflection layers is to maximize the number of incident photons that are directed into the active region of an underlying semiconductor solar cell device. The antireflection structure is formed of multiple layers of optical thin film material on top of a transparent cover glass, while having an index of refraction intermediate between that of the glass and air. In the illustrative embodiment, the profile is characterized by a step-graded profile that may or may not follow a quintic profile to provide maximum photon transmission through the antireflection layers. The exact thickness and index of refraction of each of the layers in the antireflection layer can be adjusted to further minimize reflection losses over a broad spectrum of photon wavelengths and angles of incidence. The antireflection coating can be built using a variety of different materials, either in combination or with various degrees of porosity, including but not limited to, SiO2, TiO2, Si3N4, BaF2, CdTe, ITO or other TCO materials, and diamond like carbon materials. In a specific embodiment, the index of refraction in the topmost coating is varied from 1.5 to 1.1 over three steps, with the plurality of deposited layers defining approximately 192 nm of porous SiO2 (n˜1.36), approximately 179 nm of porous SiO2(n˜1.19), and approximately 260 nm of porous SiO2(n˜1.10).
  • A method of constructing the improved antireflection structures described herein comprises coating the top and sometimes also the bottom surfaces of a transparent window with nanostructured optical coatings. The nanostructured optical coatings can be applied using the oblique angle deposition material synthesis technique. According to the illustrative embodiment, a transparent substrate is provided having a front surface and a back surface. The transparent substrate is then coated on at least one surface with a multiple layer (“multi-layer”) coating comprising a plurality of optical films, and the multi-layer coating defining a refractive index intermediate between the refractive index of the transparent substrate and the refractive index of air. The coating can be performed by depositing porous SiO2 layers using oblique-angle deposition. The coating can also be performed by depositing layers comprising SiO2, TiO2, Si3N4, BaF2, CdTe and diamond like carbon materials using oblique angle deposition. In further embodiments, the coating is applied to the front surface after forming a thin film solar cell device on the back surface of the transparent substrate.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention will be readily understood by the following detailed description in conjunction with the accompanying drawings, wherein like reference numerals designate like structural elements, and in which:
  • FIG. 1 is a schematic side cross-sectional view of a double-side coated optical window, according to an illustrative embodiment;
  • FIG. 2 is a graph showing index of refraction versus position for a two-layered step-graded antireflection coating structure on a sapphire window to enhance optical transmission into or out of the window, according to the illustrative embodiment;
  • FIG. 3 is a graph showing measured transmittance through an uncoated sapphire window and through a sapphire window coated on both sides with a 2-layer AR structure, according to the illustrative embodiment;
  • FIG. 4 is a graph showing index of refraction versus position for a three-layered step-graded antireflection coating structure on a glass window to enhance optical transmission into or out of the window, according to the illustrative embodiment;
  • FIG. 5 is a graph showing measured transmittance through an uncoated glass slide and through a glass side coated on one and both sides with a 3-layer AR structure, according to the illustrative embodiment;
  • FIG. 6 is a graph showing index of refraction versus position for a four-layered step-graded antireflection coating structure on a glass window to enhance optical transmission into or out of the window, according to the illustrative embodiment; and
  • FIG. 7 is a schematic side cross sectional view of a photovoltaic device employing a step-graded antireflection coating on the top side of a glass window covering a semiconductor device structure, configured and arranged to face the sun to enhance optical transmission of photon energies into the active regions of the underlying solar cell, according to an illustrative embodiment.
  • The drawings are not necessarily to scale with emphasis instead being placed upon illustrating embodiments of the present invention.
  • DETAILED DESCRIPTION
  • Ultra-high, broadband transmittance through coated glass windows is demonstrated over a wide range of incident angles. The measured improvements in transmittance result from coating the windows with materials consisting of porous nanorods. The use of porous nano-materials fabricated by, for example, oblique-angle deposition, enables a tunable refractive index, flexibility in choice of material, simplicity of a physical vapor deposition process, and the ability to optimize the coating for any substrate-ambient material system. A multi-layer coating adapted for a glass substrate, is fabricated and characterized as described below. For multi-layer AR coatings, according to an illustrative embodiment, the refractive index of the layers is step-graded (i.e. decreased in discrete steps), from the substrate value, 1.46, to a value of 1.18, according to the various illustrative embodiments.
  • FIG. 1 details a cross-sectional view illustrating a high transmittance window structure 100 comprising a transparent optical window 120 having an antireflection structure 110 and 130 coated, respectively, on the front and back sides. According to the illustrative embodiment, the front coating 110 is deposited on a device window 120 configured and arranged to face a light source, which provides a readily available source of photons 140. The front coating 110 is a multiple-layer coating comprising a plurality of optical films, and the multiple-layer coating defines an index of refraction between air 150 and the window 120. The multi-layer coating can comprise two, three, or more layers, up to a plurality of layers, defining refractive indices as appropriate to achieve the desired transmittance. Refer to FIGS. 2, 4 and 6, showing examples of the refractive index profile. A back coating 130 is applied to the back side of the window 120 and comprises materials possessing indices of refraction between that of the window 120 and air 150. Although photons 140 are illustratively shown as a series of a single direction of photon stream, it should be clear to those skilled in the art that the various, illustrative, and alternate embodiments will function with various varying degrees and/or amount of incident of light or source of photon energies.
  • In various embodiments, front coating 110 and back coating 130 are configured and arranged with transparent antireflection coating structures to reduce the reflection of incident photons at the material interface between air 150 and the window 120. In the various embodiments, front coating 110 and back coating 130 are implemented in accordance with industry standard processes and materials known to those skilled in the art. Transparent antireflection coating structures can comprise a single layer or multiple layers of materials having an index of refraction intermediate between the window 120 and the media in which the incident photons are delivered, which by way of example is illustrated as air 150 in FIG. 1. Single-layer transparent antireflection coating structures are generally characterized by enhanced transmittance around a single wavelength of light when the light is at normal incidence to the transparent antireflection coating structure surface. In alternate embodiments, graded-index coatings with variable-index profiles are utilized. By way of example, a quintic profile is illustrated at near optimum profile for a graded-index antireflection coating (see, for example, by way of useful background information, U.S. Pat. No. 4,583,822, entitled QUINTIC REFRACTIVE INDEX PROFILE ANTIREFLECTION COATINGS, by W. H. Southwell, the teachings of which are expressly incorporated herein by reference as useful background information). The various illustrative and alternate embodiments utilize optical materials with very low refractive indices that closely match the refractive index of air, which historically have not been utilized.
  • Oblique-angle deposition is utilized as an effective technique for tailoring the refractive index of a variety of thin film materials (see for example, by way of useful background, J.-Q. Xi, M. F. Schubert, J. K. Kim, E. F. Schubert, M. Chen, S.-Y. Lin, W. Liu, and J. A. Smart, Optical Thin-Film Materials with Low Refractive Index for Broad-Band Elimination of Fresnel Reflection, Nat. Photon., vol. 1, pp. 176-179, 2007). Oblique-angle deposition is a method of growing nanostructured, porous thin films, and hence thin films with low-refractive index (low-n), enabled by surface diffusion and self-shadowing effects during the deposition process. In oblique-angle deposition, random growth fluctuations on the substrate produce a shadow region that incident vapor flux cannot reach, and a non-shadow region where incident flux deposits preferentially, thereby creating an oriented rod-like structure with high porosity. The deposition angle, defined as the angle between the normal to the sample surface and the incident vapor flux, results in the formation of nanorod structures that are tilted relative to the sample surface. Given that the gaps between the nanorods can be much smaller than the wavelength of visible and infrared light, the nanostructured layers act as a single homogeneous film with a refractive index intermediate between air and the nanorod material, decreasing in refractive index with increasing porosity.
  • Both conducting and non-conducting graded-index antireflection coatings that are broadband and Omni-directional have been demonstrated using this deposition technique. As taught by Cho et al. in U.S. Pat. No. 7,483,212, by way of background, both oblique angle deposition and co-sputtering are material synthesis techniques that can be used to construct multiple layer, graded refractive index coatings to minimize reflection losses. The teachings of this patent are expressly incorporated herein by reference as useful background information. It is contemplated in illustrative embodiments that these processes can be adapted to minimize reflection losses for optical windows.
  • The refractive index of a front coating 110 and/or a back coating 130 on a window 120 is shown in the graph of FIG. 2 according to an illustrative embodiment. One example of step graded profile 210 is shown, along with a continuously varying quintic profile 200 of the index of refraction approximated as taught in U.S. Pat. No. 4,583,822, which is incorporated by reference as useful background information. In particular, the index of refraction, herein referred to as “n”, is varied from that of the window 120, which in this case is composed of transparent sapphire material 220 having a reflection value “n” of approximately 1.77, to that of air 150, which is shown by way of example to be approximately 1. Fresnel reflection from one surface of uncoated sapphire generally varies from approximately 8% at normal incidence to up to approximately 50% at an incident angle of 75°. While dense SiO2 is an optically transparent material, it has an index of refraction comparable to common silicon encapsulants (n˜1.47). Thus, in conventional implementations, SiO2 is not typically used to reduce reflection losses. However, according to the illustrative embodiment, oblique angle deposition is employed to produce porous SiO2 layer with lower index of refraction. More particularly, the index of refraction of the front coating 110 is varied from 1.77 to 1 over two discrete steps which can comprise a first approximately 230 nm layer 230 of dense SiO2 material (n˜1.46) and a second approximately 300 nm layer 240 of porous SiO2 material (n˜1.18).
  • Notably, all layers of a multi-layer AR coating are constructed from a single material, porous silica (porous SiO2), according to the illustrative embodiment. Silica is particularly adept for use as AR coating on a glass, quartz, or sapphire substrate, as it is native, stable and robust.
  • SiO2 coatings are well known for their long-term stability and high transmittance over a wide spectral range. Conventional, dense SiO2 has a refractive index of approximately 1.46, and thus is not an effective antireflection material for glass windows with a refractive index of approximately 1.5. However, the refractive index of porous SiO2 can be reduced to values of 1.1 or lower by increasing the porosity. Oblique angle deposition enables the creation of a wide variety of step graded refractive index structures.
  • This particular combination of index of refraction and layer thicknesses illustratively provides an appropriate approximation of the quintic profile 200, as shown in the graph of FIG. 2. During an operational embodiments of a design-optimization process, the thickness as well as the porosity of each layer in the multi-layer graded index AR coating is permitted to vary. In an embodiment, the coatings are optimized in the wavelength range of 400 nm to 2500 nm, and the angle of incidence ranges from 0° to 40°. The thickness and refractive index values of each coating can be measured using any conventional technique known to those of ordinary skill, including variable angle spectroscopic ellipsometry and scanning electron microscopy, among others. It should be clear to those skilled in the art that the number of discrete steps and the illustrated refraction index are only shown for illustrative purposes and that the number of discrete steps and various values of refractive index can be varied according to the various embodiments. Furthermore, discrete antireflection coatings can surpass the performance of continuously graded coatings by taking of advantage of interference effects, which continuously graded coatings are expressly designed to avoid, as taught by Martin F. Schubert et al. in Appl. Phys. Express, volume 3, article no. 082502.
  • FIG. 3 shows a graph that compares the measured transmittance of an uncoated sapphire (without AR) to sapphire coated on two sides with a two-layered, nanostructured SiO2 AR coating. The samples were prepared in an electron-beam evaporator using two different deposition angles (˜0° and 60°). In order to quantify the thickness and refractive index of each individual layer, a sacrificial silicon substrate was placed alongside the sapphire windows during each deposition step. The thickness and refractive index of the single layer films on silicon were measured with an ellipsometry-based measurement system. The transmittance of the coated and uncoated glass slides was then measured using an angle and wavelength dependent transmittance measurement setup. The measurement setup for characterizing transmittance versus wavelength includes a Xenon lamp light source and an Ando AQ6315A optical spectrum analyzer. The spectrum analyzer is calibrated to detect transmitted photons over a broadband spectrum (400 nm-1800 nm).
  • The measured peak transmittance of the uncoated glass slide is approximately 88%, in-line with the expected approximate 6-7% reflection loss at each glass/air interface. The peak transmittance increases to over 98% for the double-sided coated samples. As shown in the graph of FIG. 3, the transmittance of the double-sided two-layer antireflection coating is also significantly higher than the sample without antireflection coating across a wide range of incident angles. While the transmittance of the uncoated sapphire falls to below 80% at an incident angle of approximately 60°, the sapphire with the double-sided coating still maintains at a transmittance above 92%. The measured average transmittance of the sample with double-sided 2-layer antireflection coatings is 97% (between 0° and 75° and between 400 nm and 1600 nm), which represents tremendous increase over the 86% average transmittance of the uncoated reference sample.
  • The refractive index of a front coating 110 or a back coating 130 on a window 120 is shown in the graph of FIG. 4 according to an illustrative embodiment in which the window material is glass and the coating comprises SiO2 of varying porosity. One example of step graded profile 410 is shown, along with a continuously varying quintic profile 400 of the index of refraction approximated as taught in U.S. Pat. No. 4,583,822, which is incorporated by reference as useful background information. In particular, the index of refraction, herein referred to as “n”, is varied from that of the window 120, which in this case is composed of transparent glass material 420 having a reflection value “n” of approximately 1.5, to that of air 150, which is shown by way of example to be approximately 1. The Fresnel reflection from one surface of uncoated glass generally varies from approximately 4% at normal incidence to up to approximately 40% at an incident angle of 75°. According to the illustrative embodiment, oblique angle deposition is employed to produce a porous SiO2 layer with a lower index of refraction. More particularly, the index of refraction of front coating 110 is varied from 1.5 to 1 over three discrete steps, which can comprise one 192 nm layer optical material 430 having a refractive index of n˜1.36, a second 179 nm layer of optical material 440 having a refractive index of n˜1.19, and a third 260 nm layer of optical material 450 having a refractive index of n˜1.10. This particular combination of index of refraction and layer thicknesses illustratively provides an appropriate approximation of the quintic profile 200, as shown in the graph of FIG. 2. It should be clear to those skilled in the art that the number of discrete steps and the illustrated refraction index are only shown for illustrative purposes and that the number of discrete steps and various values of refractive index can be varied according to the various embodiments.
  • FIG. 5 shows a graph that compares the measured transmittance of an uncoated glass slide to the measured transmittance of glass slides coated on either one side, or two sides, with a three-layered, nanostructured SiO2 coating. The samples were prepared in an electron-beam evaporator using three different deposition angles (˜60°, 72°, and 80° respectively). In order to quantify the thickness and refractive index of each individual layer, a sacrificial silicon substrate was placed alongside the glass slides during each deposition step. The thickness and refractive index of the single layer films on silicon were measured with an ellipsometry-based measurement system, yielding layers with n˜1.10, 1.22, and 1.36 at a wavelength of 460 nm. The transmittance of the coated and uncoated glass slides was then measured using an angle and wavelength dependent transmittance measurement setup. The measurement setup for characterizing transmittance versus wavelength includes a Xenon lamp light source and an Ando AQ6315A optical spectrum analyzer. The spectrum analyzer is calibrated to detect transmitted photons over a broadband spectrum (400 nm-1800 nm).
  • The measured broadband transmittance of the uncoated glass slide is approximately 92% at normal incidence, which is expected given the approximate 4% reflection loss at each glass/air interface. The broadband transmittance at normal incidence increases to over 96% and 98%, respectively, for the single- and double-sided coated samples. These results are dramatically better than previous efforts to improve the transmittance through glass by reducing reflection losses (for example, as shown in U.S. Pat. No. 7,642,199 by Paul Meredith and Michael Harvey). The transmittance of the double-sided three-layer antireflection coating is also significantly higher than the sample without antireflection coating across a wide range of incident angles, as shown in FIG. 5. While the transmittance of the uncoated glass slide falls to below 80% at an incident angle of 65°, the glass slide with the double-sided coating still maintains a transmittance above 95%. The measured average transmittance of the sample with double-sided double-layer antireflection coatings is 97% (between 0° and 75° and between 400 nm and 1600 nm), which represents tremendous increase relative to the 86% average transmittance of the uncoated reference sample.
  • In the illustrative embodiments discussed above, SiO2 materials have been employed for the coating material because of its high transmission and stability. Window material can include quartz, glass, and sapphire. Additional optical material can also be employed in step graded AR coatings on optical windows, including SiO2, TiO2, Si3N4, BaF2, CdTe, and diamond like carbon materials. Conductive, transparent coatings can be formed by using transparent conductive oxide (TCO) materials such as indium tin oxide (ITO). The individual layers in the optical coating can comprise a single material of varying porosity, or of a solid solution of two different, dense materials, or any combination thereof. A variety of different index profiles can be employed, using two, three, four, or more index steps. While in some cases these index steps and individual layer thickness can be adjusted to approximate a continuous graded profile, in further embodiments the index versus thickness profile can deviate from that of a continuously graded profile in order to take advantage of interference phenomena. Moreover, the index step profile can be altered to minimize reflections and maximize transmittance through the optical window over specific spectral regions or incidence angles.
  • The refractive index of a front coating 110 or a back coating 130 on a window 120 is shown in the graph of FIG. 6, according to another illustrative embodiment. One example of step graded profile 610 is shown, along with a continuously varying quintic profile 600 of the index of refraction approximated as taught in U.S. Pat. No. 4,583,822, which is incorporated by reference as useful background information. In particular, the index of refraction, herein referred to as “n”, is varied from that of the window 120, which in this case is composed of transparent glass material 220 having a reflection value “n” of approximately 1.5, to that of air 150, which is shown by way of example to be approximately 1. FIG. 6 depicts a profile for a four-layered coating in which Layer 1 630 comprises a 70 nm layer having a refractive index of n˜1.43, Layer 2 640 comprises a 90 nm layer having a refractive index of n˜1.37, Layer 3 650 comprises a 150 nm layer having a refractive index of n˜1.26, and Layer 4 660 comprises a 350 nm layer having a refractive index of n˜1.09. In another embodiment, the index of refraction of front coating 110 is varied from 1.5 to 1 over four discrete steps, which can comprise one 75 nm layer optical material 630 having a refractive index of n˜1.35, a second 100 nm layer of optical material 640 having a refractive index of n˜1.29, third 160 nm layer of optical material 650 having a refractive index of n˜1.20, and a forth 210 nm layer of optical material 660 having a refractive index of n˜1.09. It should be clear to those skilled in the art that the number of discrete steps and the illustrated refraction index are only shown for illustrative purposes and that the number of discrete steps and various values of refractive index can be varied according to the various embodiments.
  • In yet another embodiment, a pore-closure layer is employed that covers the top surface and does not allow moisture, or particles, to enter the porous film. The pore-closure layer is very thin (much smaller than λ) so that it does not influence the AR coating in terms of its reflectivity. That is, the pore closure layer does not affect the reflectivity in a negative way. For example, the topmost, low-index layer in the AR coating can be capped with a thin (˜10 nm), dense layer of SiO2.
  • Double coated windows as described hereinabove can be applicable to a variety of different optical systems used for both defense and commercial applications. Optical windows coated on a single side are also of interest for a variety of applications, including photovoltaic solar cells. FIG. 7 details a cross sectional view illustrating a partial photovoltaic structure 700 comprising a semiconductor solar cell device structure 740 with a bottom contact 750. An intermediate layer 730 connects the semiconductor device structure 740 to a glass cover 720. The photovoltaic structure 700 includes an antireflection structure 710 to enhance photon absorption within the active region of the semiconductor structure 740. According to the illustrative embodiment, a front coating 710 is deposited on a device covered by a glass window 720 configured and arranged in a photovoltaic (PV) system arranged to face the sun, which provides a readily available source of photon energies 760 to the PV system. The front coating 710 is comprised of materials possessing optical characteristics having index of refractions between air 770 and the glass window 720. Refer to FIGS. 4 and 6 showing examples of the refractive index. Although photons 760 are illustratively shown as a series of a single direction of photon stream, it should be clear to those skilled in the art that the various, illustrative, and alternate embodiments will function with various varying degrees and/or amount of incident of light or source of photon energies.
  • It should now be apparent that a multi-layer, broadband, omnidirectional AR coating made of a single material having tailored-refractive-index layers on a glass substrate reduced reflectance while improving optical transmittance. The availability of the nanostructured low-n material and tunable-n materials deposited by using oblique-angle deposition has allowed the fabrication of highly effective AR coatings for low index substrates such as glass. Antireflection coatings consisting of three layers of nanostructured SiO2 have been shown to significantly increase the transmittance of optical glass windows. Double-sided coatings have achieved average transmittance values in excess of 98% over a broad spectrum and range of incident angles, which has benefits for a wide variety of specialized commercial and military optical window applications. In addition, single-sided, step graded-refractive index coatings can benefit from crystalline silicon or thin film photovoltaic systems which employ either a top cover glass or a glass superstrate.
  • The many features and advantages of the illustrative embodiments described herein are apparent from the above written description and thus it is intended by the appended claims to cover all such features and advantages of the invention. Further, because numerous modifications and changes will readily occur to those skilled in the art, it is not desired to limit the invention to the exact construction and operation as illustrated and described. For example, the illustrative embodiments can include additional layers to perform further functions or enhance existing, described functions. Likewise, while not shown, the electrical connectivity of the cell structure with other cells in an array and/or an external conduit is expressly contemplated and highly variable within ordinary skill. More generally, while some ranges of layer thickness and illustrative materials are described herein. It is expressly contemplated that additional layers, layers having differing thicknesses and/or material choices can be provided to achieve the functional advantages described herein. In addition, directional and locational terms such as “top”, “bottom”, “center”, “front”, “back”, “above”, and “below” should be taken as relative conventions only, and not as absolute. Furthermore, it is expressly contemplated that various semiconductor and thin films fabrication techniques can be employed to form the structures described herein. Accordingly, this description is to be taken only by way of example and not to otherwise limit the scope of the invention.

Claims (20)

1. A high transmittance optical window comprising:
a transparent substrate coated on both sides with a multiple layer coating; and
the multiple layer coating comprising a plurality of optical films, and the multiple layer coating defining a refractive index intermediate between the refractive index of the transparent substrate and air.
2. The high transmittance window of claim 1 wherein the transparent substrate comprises at least one of glass, quartz, and sapphire materials.
3. The high transmittance window of claim 1 wherein the multiple layer coating comprises at least one of SiO2, TiO2, Si3N4, BaF2, CdTe, and diamond like carbon materials.
4. The high transmittance window of claim 1 wherein the multiple layer coating comprises a transparent conductive oxide including at least one of indium tin oxide and zinc oxide.
5. The high transmittance window of claim 1 wherein the multiple layer coating is deposited by oblique-angle deposition.
6. The high transmittance window of claim 1 wherein the multiple layer coating comprises at least two layers having a similar chemical composition but a different porosity and thus a different refractive index.
7. The high transmittance window of claim 6 wherein the transparent substrate comprises sapphire and the index of refraction for each of the plurality of optical films is varied from 1.5 to 1.1 over two steps, with the plurality of deposited layers defining approximately 230 nm of dense SiO2 (n˜1.46) and approximately 300 nm of porous SiO2 (n˜1.18).
8. The high transmittance window of claim 1 wherein the multiple layer coating contains one of (i) at least one layer of the AR coating comprises a single dense material, (ii) at least one layer of the AR coating comprises a solid solution of two different dense materials, and (iii) at least one layer of the AR coating comprises a porous material.
9. The high transmittance window of claim 6 further comprising a pore closing coating.
10. A photovoltaic device comprising:
a glass window coated on a top, sun-facing surface with a multiple layer coating comprising a plurality of optical films, and the multiple layer coating defining a refractive index intermediate between the refractive index of the glass window (n˜1.5) and air (n˜1); and
an underlying semiconductor solar cell device.
11. The photovoltaic device of claim 10 wherein the glass window forms a cover glass that is attached to the underlying semiconductor device with transparent epoxy.
12. The photovoltaic device of claim 10 wherein the glass window forms a transparent superstrate upon which a semiconductor thin film solar cell structure is deposited.
13. The photovoltaic device of claim 10 wherein the multiple layer coating comprises at least two layers having a similar chemical composition but a different porosity and thus a different refractive index.
14. The photovoltaic device of claim 13 wherein the index of refraction in the topmost coating is varied from 1.5 to 1.1 over three steps, with the plurality of optical films defining approximately 192 nm of porous SiO2 (n˜1.36), approximately 179 nm of porous SiO2(n˜1.19), and approximately 260 nm of porous SiO2(n˜1.10).
15. The photovoltaic device of claim 13 further comprising a pore closing coating covering the topmost layer in the antireflection coating.
16. A method of manufacturing a thin film solar cell comprising:
providing a transparent substrate having a front surface and a back surface; and
coating the transparent substrate on at least one side with a multiple layer optical coating comprising a plurality of optical films, and the multiple layer optical coating defining a refractive index intermediate between the refractive index of the transparent substrate and the refractive index of air.
17. The method of claim 16 wherein the step of coating the transparent substrate comprises the deposition of porous SiO2 layers using oblique-angle deposition.
18. The method of claim 16 wherein the step of coating the transparent substrate comprises the deposition of porous TiO2 layer using oblique-angle deposition.
19. The method of claim 16 wherein the step of coating the transparent substrate comprises the depositing of a porous layers consisting of SiO2, TiO2, Si3N4, BaF2, CdTe, and diamond like carbon materials using oblique-angle deposition.
20. The method of claim 16 wherein the multiple layer optical coating is applied on the front surface after forming a thin film solar cell device on the back surface of the transparent substrate.
US12/946,580 2010-01-08 2010-11-15 High transmittance optical windows and method of constructing the same Abandoned US20110168261A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/946,580 US20110168261A1 (en) 2010-01-08 2010-11-15 High transmittance optical windows and method of constructing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29346910P 2010-01-08 2010-01-08
US12/946,580 US20110168261A1 (en) 2010-01-08 2010-11-15 High transmittance optical windows and method of constructing the same

Publications (1)

Publication Number Publication Date
US20110168261A1 true US20110168261A1 (en) 2011-07-14

Family

ID=44257581

Family Applications (7)

Application Number Title Priority Date Filing Date
US12/719,811 Active 2031-08-16 US8895838B1 (en) 2010-01-08 2010-03-08 Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same
US12/946,580 Abandoned US20110168261A1 (en) 2010-01-08 2010-11-15 High transmittance optical windows and method of constructing the same
US14/547,055 Active US9543456B1 (en) 2010-01-08 2014-11-18 Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same
US14/813,095 Abandoned US20160027940A1 (en) 2010-01-08 2015-07-29 Quantum well waveguide solar cells and methods of constructing the same
US14/818,274 Active US9590133B1 (en) 2010-01-08 2015-08-04 Thin film solar cells on flexible substrates and methods of constructing the same
US15/708,057 Active US11177400B1 (en) 2010-01-08 2017-09-18 Concentrator photovoltaic subassembly and method of constructing the same
US17/526,623 Active US11817524B1 (en) 2010-01-08 2021-11-15 Concentrator photovoltaic subassembly and method of constructing the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US12/719,811 Active 2031-08-16 US8895838B1 (en) 2010-01-08 2010-03-08 Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same

Family Applications After (5)

Application Number Title Priority Date Filing Date
US14/547,055 Active US9543456B1 (en) 2010-01-08 2014-11-18 Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same
US14/813,095 Abandoned US20160027940A1 (en) 2010-01-08 2015-07-29 Quantum well waveguide solar cells and methods of constructing the same
US14/818,274 Active US9590133B1 (en) 2010-01-08 2015-08-04 Thin film solar cells on flexible substrates and methods of constructing the same
US15/708,057 Active US11177400B1 (en) 2010-01-08 2017-09-18 Concentrator photovoltaic subassembly and method of constructing the same
US17/526,623 Active US11817524B1 (en) 2010-01-08 2021-11-15 Concentrator photovoltaic subassembly and method of constructing the same

Country Status (1)

Country Link
US (7) US8895838B1 (en)

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175690A (en) * 2012-02-27 2013-09-05 Yamagata Univ Method of assisting manufacturing multilayer substrate, method of manufacturing multilayer substrate, method of identifying failure cause, manufacture assisting program for multilayer substrate, and multilayer substrate
US20140096817A1 (en) * 2012-10-10 2014-04-10 Silevo, Inc. Novel hole collectors for silicon photovoltaic cells
US20140102524A1 (en) * 2012-10-15 2014-04-17 Silevo, Inc. Novel electron collectors for silicon photovoltaic cells
WO2014093221A1 (en) * 2012-12-10 2014-06-19 Gt Crystal Systems, Llc A mobile electronic device comprising a multilayer sapphire cover plate
US20150137836A1 (en) * 2012-06-18 2015-05-21 Postech Academy-Industry Foundation Metal oxide semiconductor gas sensor having nanostructure and method for manufacturing same
US20150177426A1 (en) * 2012-08-01 2015-06-25 Ferro Corporation Light Influencing Nano Layer
JP2015121512A (en) * 2013-12-25 2015-07-02 セイコーエプソン株式会社 Cover glass and timepiece
DE102014100769A1 (en) * 2014-01-23 2015-07-23 Carl Zeiss Jena Gmbh Process for producing a reflection-reducing layer system and reflection-reducing layer system
US9400343B1 (en) 2014-04-30 2016-07-26 Magnolia Optical Technologies, Inc. Highly durable hydrophobic antireflection structures and method of manufacturing the same
CN106733548A (en) * 2017-01-09 2017-05-31 清华大学 A kind of preparation method of the double-deck oxidation silicone self-cleaning antireflective film of the modified homogeneity in surface
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US20170322359A1 (en) * 2016-05-04 2017-11-09 Samsung Display Co., Ltd. Display device
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
WO2018023032A1 (en) * 2016-07-28 2018-02-01 Racing Optics, Inc. Low reflectance optical web
US9887306B2 (en) 2011-06-02 2018-02-06 Tesla, Inc. Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
JP2018509766A (en) * 2015-03-12 2018-04-05 ビトロ、エセ.ア.ベ. デ セ.ウベ. Optoelectronic device and manufacturing method thereof
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US10084107B2 (en) 2010-06-09 2018-09-25 Tesla, Inc. Transparent conducting oxide for photovoltaic devices
US10084099B2 (en) 2009-11-12 2018-09-25 Tesla, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US10115839B2 (en) 2013-01-11 2018-10-30 Tesla, Inc. Module fabrication of solar cells with low resistivity electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10164127B2 (en) 2013-01-11 2018-12-25 Tesla, Inc. Module fabrication of solar cells with low resistivity electrodes
US10283657B1 (en) 2010-01-08 2019-05-07 Magnolia Optical Technologies, Inc. Broadband photovoltaic sheets and method of constructing the same
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
WO2020118312A1 (en) 2018-12-07 2020-06-11 Scholtz James An infrared imager and related systems
CN113149458A (en) * 2021-02-26 2021-07-23 中建材蚌埠玻璃工业设计研究院有限公司 Cover plate glass of colored photovoltaic module and preparation method thereof
WO2021207389A1 (en) * 2020-04-07 2021-10-14 Scholtz James I Apparatus and methods for selective detection of pathogens and/or chemicals
US20210367091A1 (en) * 2017-11-21 2021-11-25 Technion Research & Development Foundation Limited Harvesting of energy from diverse wavelengths
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
US20220077337A1 (en) * 2018-12-21 2022-03-10 Loughborough University Cover sheet for photovoltaic panel
US11307329B1 (en) 2021-07-27 2022-04-19 Racing Optics, Inc. Low reflectance removable lens stack
US11490667B1 (en) 2021-06-08 2022-11-08 Racing Optics, Inc. Low haze UV blocking removable lens stack
US11585962B2 (en) 2018-10-19 2023-02-21 Racing Optics, Inc. Transparent covering having anti-reflective coatings
US11622592B2 (en) 2014-06-17 2023-04-11 Racing Optics, Inc. Adhesive mountable stack of removable layers
US11625072B2 (en) 2010-05-14 2023-04-11 Racing Optics, Inc. Touch screen shield
EP4062206A4 (en) * 2019-11-18 2023-05-03 Lockheed Martin Corporation Reduction of reflections through relatively angled transmissive surfaces
US11648723B2 (en) 2019-12-03 2023-05-16 Racing Optics, Inc. Method and apparatus for reducing non-normal incidence distortion in glazing films
US11684106B2 (en) 2005-07-14 2023-06-27 Stryker Corporation Surgical personal protection apparatus
US11709296B2 (en) 2021-07-27 2023-07-25 Racing Optics, Inc. Low reflectance removable lens stack
US11807078B2 (en) 2020-03-10 2023-11-07 Racing Optics, Inc. Protective barrier for safety glazing
US11808952B1 (en) 2022-09-26 2023-11-07 Racing Optics, Inc. Low static optical removable lens stack
US11833790B2 (en) 2019-05-21 2023-12-05 Racing Optics, Inc. Polymer safety glazing for vehicles
US11845249B2 (en) 2019-02-01 2023-12-19 Racing Optics, Inc. Thermoform windshield stack with integrated formable mold and method
US11846788B2 (en) 2019-02-01 2023-12-19 Racing Optics, Inc. Thermoform windshield stack with integrated formable mold
US11933943B2 (en) 2022-06-06 2024-03-19 Laminated Film Llc Stack of sterile peelable lenses with low creep

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2981195A1 (en) * 2011-10-11 2013-04-12 Soitec Silicon On Insulator MULTI-JUNCTION IN A SEMICONDUCTOR DEVICE FORMED BY DIFFERENT DEPOSITION TECHNIQUES
US11367800B1 (en) 2012-04-20 2022-06-21 Magnolia Solar, Inc. Optically-thin III-V solar cells and methods for constructing the same
TWI656651B (en) 2014-02-05 2019-04-11 美商太陽光電公司 Monolithic multijunction power converter
US20170110613A1 (en) 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
US10600928B1 (en) * 2016-09-20 2020-03-24 Apple Inc. Systems with photovoltaic cells
KR101931712B1 (en) * 2016-12-28 2018-12-24 엘지전자 주식회사 Compound semiconductor solar cell
EP3669402A1 (en) 2017-09-27 2020-06-24 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having a dilute nitride layer
US11978813B1 (en) 2019-12-23 2024-05-07 United States Of America As Represented By The Secretary Of The Air Force Systems, methods and apparatus for coupling solar cells
CN111446313B (en) * 2020-03-11 2021-11-26 长春理工大学 Quantum well structure and growth method thereof
US11670735B2 (en) * 2020-12-14 2023-06-06 Lumileds Llc Monolithic electrical power converter formed with layers

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535026A (en) * 1983-06-29 1985-08-13 The United States Of America As Represented By The United States Department Of Energy Antireflective graded index silica coating, method for making
US4583822A (en) * 1984-10-31 1986-04-22 Rockwell International Corporation Quintic refractive index profile antireflection coatings
US20030082399A1 (en) * 2001-10-31 2003-05-01 Liu He Radiation-curable anti-reflective coating system
US20030121542A1 (en) * 2000-03-30 2003-07-03 Wolfgang Harneit Method for producing a solar module with thin-film solar cells which are series-connected in an integrated manner and solar modules produced according to the method, especially using concentrator modules
US20060165963A1 (en) * 2002-07-03 2006-07-27 Saint-Gobain Glass France Transparent substrate comprising antiglare coating
US20080223434A1 (en) * 2007-02-19 2008-09-18 Showa Denko K.K. Solar cell and process for producing the same
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
US7553691B2 (en) * 2002-10-31 2009-06-30 Emcore Solar Power, Inc. Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
US20090324910A1 (en) * 2008-06-16 2009-12-31 Massachussetts Institute Of Technology Coatings
US7642199B2 (en) * 2004-11-22 2010-01-05 Xerocoat Inc. Silica and silica-like films and method of production

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2668867A (en) 1952-03-21 1954-02-09 Vitro Corp Of America Photocell construction
US3368078A (en) 1964-10-02 1968-02-06 North American Rockwell Radiant energy sensitive device
DE3741477A1 (en) 1987-12-08 1989-06-22 Fraunhofer Ges Forschung CONCENTRATOR ARRANGEMENT
JP2719230B2 (en) 1990-11-22 1998-02-25 キヤノン株式会社 Photovoltaic element
GB9122197D0 (en) * 1991-10-18 1991-11-27 Imperial College A concentrator solar cell
EP0915523A3 (en) 1997-10-29 2005-11-02 Canon Kabushiki Kaisha A photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovoltaic element
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
JP3717372B2 (en) 2000-05-15 2005-11-16 シャープ株式会社 Solar cell module
US20060076047A1 (en) * 2001-04-23 2006-04-13 Green David R Potted domed solar panel capsule and traffic warning lamps incorporating same
WO2004032189A2 (en) 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells
JP2004296658A (en) * 2003-03-26 2004-10-21 Sharp Corp Multijunction solar cell and its current matching method
US7812249B2 (en) 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
US7202411B1 (en) * 2003-05-01 2007-04-10 United States Of America Department Of Energy Photovoltaic and thermophotovoltaic devices with quantum barriers
JP5151012B2 (en) 2005-05-30 2013-02-27 富士電機株式会社 Manufacturing method of semiconductor device
KR101173527B1 (en) 2005-06-30 2012-08-14 노키아 코포레이션 Apparatus, method and computer -readable storage medium providing closed loop transmit antenna operation for systems using multiple antennas
US10069026B2 (en) * 2005-12-19 2018-09-04 The Boeing Company Reduced band gap absorber for solar cells
US20080121269A1 (en) 2006-08-23 2008-05-29 Welser Roger E Photovoltaic micro-concentrator modules
TW200814343A (en) 2006-09-12 2008-03-16 Delta Electronics Inc Energy collecting system
FR2908406B1 (en) 2006-11-14 2012-08-24 Saint Gobain POROUS LAYER, METHOD FOR MANUFACTURING THE SAME, AND APPLICATIONS THEREOF
US20100006143A1 (en) * 2007-04-26 2010-01-14 Welser Roger E Solar Cell Devices
US20080276990A1 (en) 2007-05-10 2008-11-13 Board Of Regents, University Of Texas System Substrate surface structures and processes for forming the same
US8013238B2 (en) 2007-07-09 2011-09-06 Energy Related Devices, Inc. Micro concentrators elastically coupled with spherical photovoltaic cells
WO2009012345A2 (en) * 2007-07-16 2009-01-22 Ascent Solar Technologies, Inc. Hybrid multi-junction photovoltaic cells and associated methods
US20090101209A1 (en) 2007-10-19 2009-04-23 Guardian Industries Corp. Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same
CA2713910A1 (en) * 2008-02-12 2009-08-20 Michael Julian Brett Photovoltaic device based on conformal coating of columnar structures
CN102832281A (en) 2008-04-04 2012-12-19 纳幕尔杜邦公司 Solar cell modules comprising high melt flow poly (vinyl butyral) encapsulants
US20100065120A1 (en) * 2008-09-12 2010-03-18 Solfocus, Inc. Encapsulant with Modified Refractive Index
US8022291B2 (en) 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
US8866005B2 (en) * 2008-10-17 2014-10-21 Kopin Corporation InGaP heterojunction barrier solar cells
US8236600B2 (en) * 2008-11-10 2012-08-07 Emcore Solar Power, Inc. Joining method for preparing an inverted metamorphic multijunction solar cell
US8217259B2 (en) 2009-05-29 2012-07-10 International Business Machines Corporation Enhanced efficiency solar cells and method of manufacture

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535026A (en) * 1983-06-29 1985-08-13 The United States Of America As Represented By The United States Department Of Energy Antireflective graded index silica coating, method for making
US4583822A (en) * 1984-10-31 1986-04-22 Rockwell International Corporation Quintic refractive index profile antireflection coatings
US20030121542A1 (en) * 2000-03-30 2003-07-03 Wolfgang Harneit Method for producing a solar module with thin-film solar cells which are series-connected in an integrated manner and solar modules produced according to the method, especially using concentrator modules
US20030082399A1 (en) * 2001-10-31 2003-05-01 Liu He Radiation-curable anti-reflective coating system
US20060165963A1 (en) * 2002-07-03 2006-07-27 Saint-Gobain Glass France Transparent substrate comprising antiglare coating
US7553691B2 (en) * 2002-10-31 2009-06-30 Emcore Solar Power, Inc. Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
US7642199B2 (en) * 2004-11-22 2010-01-05 Xerocoat Inc. Silica and silica-like films and method of production
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
US20080223434A1 (en) * 2007-02-19 2008-09-18 Showa Denko K.K. Solar cell and process for producing the same
US20090324910A1 (en) * 2008-06-16 2009-12-31 Massachussetts Institute Of Technology Coatings

Cited By (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11910861B2 (en) 2005-07-14 2024-02-27 Stryker Corporation Surgical personal protection apparatus
US11684106B2 (en) 2005-07-14 2023-06-27 Stryker Corporation Surgical personal protection apparatus
US10084099B2 (en) 2009-11-12 2018-09-25 Tesla, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US10283657B1 (en) 2010-01-08 2019-05-07 Magnolia Optical Technologies, Inc. Broadband photovoltaic sheets and method of constructing the same
US11625072B2 (en) 2010-05-14 2023-04-11 Racing Optics, Inc. Touch screen shield
US10084107B2 (en) 2010-06-09 2018-09-25 Tesla, Inc. Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9887306B2 (en) 2011-06-02 2018-02-06 Tesla, Inc. Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
JP2013175690A (en) * 2012-02-27 2013-09-05 Yamagata Univ Method of assisting manufacturing multilayer substrate, method of manufacturing multilayer substrate, method of identifying failure cause, manufacture assisting program for multilayer substrate, and multilayer substrate
US20150137836A1 (en) * 2012-06-18 2015-05-21 Postech Academy-Industry Foundation Metal oxide semiconductor gas sensor having nanostructure and method for manufacturing same
US9689785B2 (en) * 2012-06-18 2017-06-27 Postech Academy-Industry Foundation Metal oxide semiconductor gas sensor having nanostructure and method for manufacturing same
US9671529B2 (en) * 2012-08-01 2017-06-06 Ferro Corporation Light influencing nano layer
US20150177426A1 (en) * 2012-08-01 2015-06-25 Ferro Corporation Light Influencing Nano Layer
US9865754B2 (en) * 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US20140096817A1 (en) * 2012-10-10 2014-04-10 Silevo, Inc. Novel hole collectors for silicon photovoltaic cells
US20140102524A1 (en) * 2012-10-15 2014-04-17 Silevo, Inc. Novel electron collectors for silicon photovoltaic cells
US9655293B2 (en) 2012-12-10 2017-05-16 Gtat Corporation Mobile electronic device comprising a multilayer sapphire cover plate
WO2014093221A1 (en) * 2012-12-10 2014-06-19 Gt Crystal Systems, Llc A mobile electronic device comprising a multilayer sapphire cover plate
US10115839B2 (en) 2013-01-11 2018-10-30 Tesla, Inc. Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US10164127B2 (en) 2013-01-11 2018-12-25 Tesla, Inc. Module fabrication of solar cells with low resistivity electrodes
JP2015121512A (en) * 2013-12-25 2015-07-02 セイコーエプソン株式会社 Cover glass and timepiece
DE102014100769A1 (en) * 2014-01-23 2015-07-23 Carl Zeiss Jena Gmbh Process for producing a reflection-reducing layer system and reflection-reducing layer system
DE102014100769B4 (en) 2014-01-23 2019-07-18 Carl Zeiss Ag Process for producing a reflection-reducing layer system and reflection-reducing layer system
US9400343B1 (en) 2014-04-30 2016-07-26 Magnolia Optical Technologies, Inc. Highly durable hydrophobic antireflection structures and method of manufacturing the same
US10281617B1 (en) 2014-04-30 2019-05-07 Magnolia Optical Technologies, Inc. Highly durable hydrophobic antireflection structures and method of manufacturing the same
US11622592B2 (en) 2014-06-17 2023-04-11 Racing Optics, Inc. Adhesive mountable stack of removable layers
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
JP2018509766A (en) * 2015-03-12 2018-04-05 ビトロ、エセ.ア.ベ. デ セ.ウベ. Optoelectronic device and manufacturing method thereof
US10672921B2 (en) 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with transparent conductive layer and method of making the same
US10680123B2 (en) 2015-03-12 2020-06-09 Vitro Flat Glass Llc Article with transparent conductive oxide coating
US10672920B2 (en) 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with buffer layer
US10181536B2 (en) 2015-10-22 2019-01-15 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US20170322359A1 (en) * 2016-05-04 2017-11-09 Samsung Display Co., Ltd. Display device
EP4220243A3 (en) * 2016-07-28 2023-11-01 Racing Optics, Inc. Low reflectance optical web
US10427385B2 (en) 2016-07-28 2019-10-01 Racing Optics, Inc. Low reflectance optical web
WO2018023032A1 (en) * 2016-07-28 2018-02-01 Racing Optics, Inc. Low reflectance optical web
US11141959B2 (en) 2016-07-28 2021-10-12 Racing Optics, Inc. Low reflectance optical web
US11833785B2 (en) 2016-07-28 2023-12-05 Racing Optics, Inc. Low reflectance optical web
CN106733548A (en) * 2017-01-09 2017-05-31 清华大学 A kind of preparation method of the double-deck oxidation silicone self-cleaning antireflective film of the modified homogeneity in surface
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US20210367091A1 (en) * 2017-11-21 2021-11-25 Technion Research & Development Foundation Limited Harvesting of energy from diverse wavelengths
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
US11585962B2 (en) 2018-10-19 2023-02-21 Racing Optics, Inc. Transparent covering having anti-reflective coatings
US11381760B2 (en) * 2018-12-07 2022-07-05 James Scholtz Infrared imager and related systems
EP3890917A4 (en) * 2018-12-07 2022-10-19 Scholtz, James An infrared imager and related systems
WO2020118312A1 (en) 2018-12-07 2020-06-11 Scholtz James An infrared imager and related systems
US20220077337A1 (en) * 2018-12-21 2022-03-10 Loughborough University Cover sheet for photovoltaic panel
US11846788B2 (en) 2019-02-01 2023-12-19 Racing Optics, Inc. Thermoform windshield stack with integrated formable mold
US11845249B2 (en) 2019-02-01 2023-12-19 Racing Optics, Inc. Thermoform windshield stack with integrated formable mold and method
US11833790B2 (en) 2019-05-21 2023-12-05 Racing Optics, Inc. Polymer safety glazing for vehicles
EP4062206A4 (en) * 2019-11-18 2023-05-03 Lockheed Martin Corporation Reduction of reflections through relatively angled transmissive surfaces
US11648723B2 (en) 2019-12-03 2023-05-16 Racing Optics, Inc. Method and apparatus for reducing non-normal incidence distortion in glazing films
US11807078B2 (en) 2020-03-10 2023-11-07 Racing Optics, Inc. Protective barrier for safety glazing
US11513073B2 (en) 2020-04-07 2022-11-29 James I. Scholtz Apparatus and methods for selective detection of pathogens and/or chemicals
WO2021207389A1 (en) * 2020-04-07 2021-10-14 Scholtz James I Apparatus and methods for selective detection of pathogens and/or chemicals
CN113149458A (en) * 2021-02-26 2021-07-23 中建材蚌埠玻璃工业设计研究院有限公司 Cover plate glass of colored photovoltaic module and preparation method thereof
US11723420B2 (en) 2021-06-08 2023-08-15 Racing Optics, Inc. Low haze UV blocking removable lens stack
US11490667B1 (en) 2021-06-08 2022-11-08 Racing Optics, Inc. Low haze UV blocking removable lens stack
US11307329B1 (en) 2021-07-27 2022-04-19 Racing Optics, Inc. Low reflectance removable lens stack
US11709296B2 (en) 2021-07-27 2023-07-25 Racing Optics, Inc. Low reflectance removable lens stack
US11624859B2 (en) 2021-07-27 2023-04-11 Racing Optics, Inc. Low reflectance removable lens stack
US11988850B2 (en) 2021-07-27 2024-05-21 Laminated Film Llc Low reflectance removable lens stack
US11933943B2 (en) 2022-06-06 2024-03-19 Laminated Film Llc Stack of sterile peelable lenses with low creep
US11808952B1 (en) 2022-09-26 2023-11-07 Racing Optics, Inc. Low static optical removable lens stack

Also Published As

Publication number Publication date
US9543456B1 (en) 2017-01-10
US9590133B1 (en) 2017-03-07
US11817524B1 (en) 2023-11-14
US20160027940A1 (en) 2016-01-28
US11177400B1 (en) 2021-11-16
US8895838B1 (en) 2014-11-25

Similar Documents

Publication Publication Date Title
US20110168261A1 (en) High transmittance optical windows and method of constructing the same
US10281617B1 (en) Highly durable hydrophobic antireflection structures and method of manufacturing the same
US11088291B2 (en) Ultra-low reflectance broadband omni-directional anti-reflection coating
KR101739823B1 (en) Layered element, and photovoltaic device including such an element
CN105022106B (en) The ultra wide band absorber and preparation method of a kind of visible near-infrared wave band
US20150349147A1 (en) Broad Band Anti-Reflection Coating for Photovoltaic Devices and Other Devices
KR20110137367A (en) Optical coating
KR101194257B1 (en) Transparent substrate for solar cell having a broadband anti-reflective multilayered coating thereon and method for preparing the same
JP7307148B2 (en) Solar module with patterned cover plate and optical interference layer
US20120319223A1 (en) Diffuse omni-directional back reflectors and methods of manufacturing the same
Beye et al. Optimization of SiNx single and double layer ARC for silicon thin film solar cells on glass
CN103069308A (en) Silicon multilayer anti-reflective film with gradually varying refractive index and manufacturing method therefor, and solar cell having same and manufacturing method therefor
JP2013529845A (en) Substrate provided with transparent conductive oxide film and method for manufacturing the same
CN101846756A (en) MgF2/oxide composite membrane used for anti-reflection of glass surface
Richards et al. TiO2 DLAR coatings for planar silicon solar cells
Welser et al. Broadband nanostructured antireflection coating on glass for photovoltaic applications
WO2019075215A1 (en) Nanocone metasurface for omni-directional detectors and photovoltaics
Woo et al. Wideband Antireflection Coatings of Porous MgF∼ 2 Films by Using Glancing Angle Deposition
CN102916057B (en) A kind of crystal silicon solar batteries graded index antireflective film and preparation method thereof
Welser et al. Ultra-high transmittance through nanostructure-coated glass for solar cell applications
KR20120107203A (en) Transparent substrate for solar cell having a broadband anti-reflective multilayered coating thereon and method for preparing the same
Lim et al. Broadband antireflection for a high-index substrate using SiNx/SiO2 by inductively coupled plasma chemical vapour deposition
Ateto et al. Triple layer antireflection design concept for the front side of c-Si heterojunction solar cell based on the antireflective effect of nc-3C-SiC: H emitter layer
Amin et al. Fabrication solar cell of CdTe _ 0.65 P _ 0.35 CdTe 0.65 P 0.35/Si with high efficiency using double-layer antireflection
KR101543657B1 (en) Transparent colored solar cell

Legal Events

Date Code Title Description
AS Assignment

Owner name: RENNSELAER POLYTECHNIC INSTITUTE, NEW YORK

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:POXSON, DAVID J.;CHHAJED, SAMEER;MONT, FRANK W.;AND OTHERS;REEL/FRAME:025440/0590

Effective date: 20101118

Owner name: MAGNOLIA OPTICAL TECHNOLOGIES, INC., MASSACHUSETTS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WELSER, ROGER E.;SOOD, ASHOK K.;SIGNING DATES FROM 20101117 TO 20101119;REEL/FRAME:025438/0458

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION