US20100329964A1 - Deposit and electrical devices comprising the same - Google Patents
Deposit and electrical devices comprising the same Download PDFInfo
- Publication number
- US20100329964A1 US20100329964A1 US12/747,991 US74799108A US2010329964A1 US 20100329964 A1 US20100329964 A1 US 20100329964A1 US 74799108 A US74799108 A US 74799108A US 2010329964 A1 US2010329964 A1 US 2010329964A1
- Authority
- US
- United States
- Prior art keywords
- deposit
- molecules
- carbon nanobud
- nanobud
- carbon
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000002646 carbon nanobud Substances 0.000 claims abstract description 123
- 229910021394 carbon nanobud Inorganic materials 0.000 claims abstract description 123
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical group C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 40
- 239000003990 capacitor Substances 0.000 claims abstract description 24
- 229910003472 fullerene Inorganic materials 0.000 claims description 23
- 230000005670 electromagnetic radiation Effects 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 5
- 230000037361 pathway Effects 0.000 claims description 4
- 239000002625 nanobud Substances 0.000 description 83
- 238000000034 method Methods 0.000 description 43
- 239000000758 substrate Substances 0.000 description 41
- 239000003792 electrolyte Substances 0.000 description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 19
- 239000002608 ionic liquid Substances 0.000 description 18
- 238000000151 deposition Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- 229920000642 polymer Polymers 0.000 description 17
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical group CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 239000000020 Nitrocellulose Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 229920001220 nitrocellulos Polymers 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 239000004698 Polyethylene Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- NJMWOUFKYKNWDW-UHFFFAOYSA-N 1-ethyl-3-methylimidazolium Chemical compound CCN1C=C[N+](C)=C1 NJMWOUFKYKNWDW-UHFFFAOYSA-N 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 239000000443 aerosol Substances 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 229920005569 poly(vinylidene fluoride-co-hexafluoropropylene) Polymers 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 239000002071 nanotube Substances 0.000 description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000007306 functionalization reaction Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003760 magnetic stirring Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
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- 238000000206 photolithography Methods 0.000 description 2
- 229920005597 polymer membrane Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000001089 thermophoresis Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
- H10K85/225—Carbon nanotubes comprising substituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
A deposit of material includes carbon nanobud molecules. The carbon nanobud molecules are bonded to each other via at least one fullerene group (2). An electrical device includes a deposit including carbon nanobud molecules. The electrical device may be e.g. a transistor (18), a field emitter (17, 19), a transparent electrode (15, 24, 28, 30), a capacitor (31), a solar cell (32), a light source, a display element or a sensor (33).
Description
- The present invention relates to electronics, microelectronics and electronic materials. Especially the present invention relates to a deposit of material used in different kinds of electronic devices.
- New materials are continuously required to produce faster, more efficient and less expensive electrical components. For example, as the characteristic dimensions in microelectronics components continue to shrink towards the nano-scale, new materials may be required to take into account quantum-mechanical effects occurring specifically at this atomic scale.
- Due to the two-dimensional nature of processing technologies in the electronics and microelectronics industries, the use of new materials in the form of layered structures, films or other deposits is of particular importance. Conventional materials are often limited in their electrical, thermal and mechanical stability. Furthermore the reliable fabrication of electrically conductive continuous metallic layers, films or deposits with a thickness of below 10 nm is difficult with currently known deposition methods. These very thin deposits are especially sensitive to thermal damage and electromigration caused by high current densities in the deposit. The lack of stability of conventional films and other deposits also causes diffusion of the film material into adjacent regions of a device resulting in degradation of the device performance and even failure. As the dimensions of microelectronics devices shrink towards the nano-scale the problem of material diffusion becomes even more pronounced.
- In addition to the generic beneficial properties of good electrical, thermal and mechanical stability, there exist several important material requirements for deposits depending on the specific application in which the deposit is to be used. In, for example, field effect transistors (FETs), the material forming the channel must possess high on-off ratios and high electron mobility in order to comply with the high switching speeds required in state-of-the-art data processors. A low work function is required for deposits that are used as field emitters in for example field emitting displays (FEDs). In addition to the obvious optical requirements, deposits used as transparent electrodes have the requirement of high conductivity which would result in a low sheet resistance. The transparent conductive deposits or electrodes are further used in for example displays (such as FEDs, LCDs, plasma displays and cathode ray tubes), solid state light sources, solar cells, touch screens and charge dissipating surfaces and in, for instance, electromagnetic shielding. In supercapacitors there exists a need for electrically stable, porous, and highly conductive deposits for the electrode material. The electrodes in solar cells require highly conductive material with good transparency to solar radiation. Furthermore, various sensors require e.g. conductivity to vary with environmental conditions. In all of the aforementioned devices mechanical flexibility of a deposit would bring further flexibility to the design of such devices. Furthermore mechanically flexible deposits would enable the fabrication of devices such as flexible solar cells, flexible displays etc.
- In publication PCT/FI2006/000206 a new type of carbon-based molecule and a method to synthesize the same is presented. These molecules, hereinafter referred to as carbon nanobuds or carbon nanobud molecules, have fullerene or fullerene-like molecules covalently bonded to the side of a tubular carbon molecule (
FIG. 1 ). On a molecular level carbon nanobuds are disclosed in the publication to possess interesting electrical properties. - Using individual carbon nanobud molecules in electrical devices is difficult since it is difficult to control the orientation of the molecule at a certain location with sufficient accuracy. Furthermore using a single molecule at a certain point in a device requires that the molecule be of predetermined length and crystal structure which is also very difficult to control. In some devices, e.g. in solar cells and in supercapacitors, the volume or the amount of material simply has to be sufficiently large so that the use of a single molecule is not feasible.
- As explained above it is obvious that, in the art, there exists a strong need for new types of more stable deposits with other device-specific properties to be used in electrical components for e.g. carrier transport and carrier storage. This need is expected to grow as the characteristic dimensions of electrical components shrink in size and their speed and efficiency improves.
- The purpose of the present invention is to reduce the aforementioned technical problems of the prior-art by providing a new type of deposit and improved electrical device structures utilizing the new type of deposit.
- The present invention is characterized by what is presented in
independent claims - The deposit of material according to the present invention comprises carbon nanobud molecules. The carbon nanobud molecules are bonded to each other via at least one fullerene group.
- The electrical device according to the present invention comprises a deposit comprising carbon nanobud molecules.
- An individual carbon nanobud molecule comprises mainly carbon atoms but the molecules may be functionalized with groups containing other elements. Hence the deposit comprising carbon nanobud molecules contains carbon atoms for the most part but other elements may be incorporated into the deposit during functionalization and as impurities.
- The carbon nanobud molecules in the deposit and in the electrical device according to the present invention take the form of a network in which the molecules may be randomly distributed or fully or partially aligned. In one embodiment of the present invention the carbon nanobud molecules form a network of electrically conductive paths in the deposit of material according to the present invention.
- In another embodiment of the present invention the carbon nanobud molecules form an essentially parallel array of electrically conductive paths in the deposit of material according to the present invention. These essentially parallel conductive paths provide a way to fabricate a plurality of single-molecule electrical devices in parallel which can be used to reduce the dependency of e.g. a circuit from the operation of one device.
- A random distribution or parallel array of carbon nanobud molecules in a film or other deposit ensures that the deposit of these molecules contains many possible paths for current flow. The deposit also provides a statistically large number of molecules so that the effects of variation in the properties of individual molecules are suppressed. Therefore the deposit comprising carbon nanobud molecules according to the present invention is not dependent on the functioning of an individual molecule. This improves the reliability of devices exploiting deposits comprising carbon nanobud molecules as opposed to devices in which the flow of current depends on an individual conducting molecule.
- In an electrical device according to one embodiment of the present invention a deposit comprising carbon nanobud molecules serves the function of carrier transport or carrier storage.
- The deposits comprising carbon nanobud molecules according to the present invention may be deposited using the commonly known methods of e.g. filtration from gas phase or from liquid, deposition in a force field and deposition from a solution using spray coating or spin drying. The carbon nanobud molecules can also be suspended in solution and sprayed or spin coated onto e.g. a silicon wafer to form e.g. a film. The carbon nanobud molecules can also be grown on a surface. The deposit can be further patterned to form a special shape. In one embodiment of the present invention the deposit of material according to the present invention is a volume, a film or a wire of material.
- In another embodiment of the present invention the deposit of material according to the present invention has a thickness between 1 nanometre and 10 centimetres and preferably a thickness between 1 nanometre and 100 micrometres.
- Compared to conventional deposits of conductive or semiconductive material, the deposits comprising carbon nanobuds according to the present invention possess superior electrical, thermal and mechanical stability. These properties are particularly important in deposits which are used for carrier transport in electrical devices. The stability requirements become even more pronounced in electrical devices with small physical size or in flexible devices or in electrical devices operating in severe environments.
- In one embodiment of the present invention the carbon nanobud molecules are bonded to each other via at least one fullerene group in the deposit of material according to the present invention.
- The reason for the stability of the deposit according to the present invention is the ability of a fullerene group to bond to the side of the tubular part or to a fullerene group of other carbon nanobud molecules directly or via a bridge molecule. The strong intermolecular bonding enabled by the fullerene groups efficiently prevents the slipping of individual molecules with respect to each other. The stability of the deposit according to the present invention is further enhanced by the strong intramolecular covalent bonds of a carbon nanobud molecule. The bonds can also act as low resistivity junctions between molecules lowering the overall resistance of the network.
- In addition to the stability of the deposit comprising carbon nanobud molecules, the deposit possesses many other device-specific beneficial characteristics resulting from the unique bonding scheme of the deposit according to the present invention. These characteristics including e.g. a low work function, mechanical flexibility, a nanoporous structure, high conductivity, controllable conductivity and semiconductivity and high carrier mobility can be utilized in an electrical device according to the present invention.
- In one embodiment of the present invention the carbon nanobud molecules are functionalized via at least one fullerene group in the deposit of material according to the present invention. This functionaliziation may be, for instance, by a dye or otherwise photo active functional group so as to provide a means of exciting an electron by means of electromagnetic radiation or to change the conductivity or band gap of the deposit comprising carbon nanobud molecules.
- In one embodiment of the present invention the deposit of material according to the present invention has a low work function resulting in electron emission with a threshold electric field of below 10 Volts per micrometer, preferably with a threshold electric field of below 2 Volts per micrometer and most preferably with a threshold electric field of below 1 Volt per micrometer.
- In another embodiment of the present invention the deposit of material according to the present invention has an on-off ratio above 1, preferably above 1×102 and most preferably above 1×104. The on-off ratio is defined here as the ratio of the conductivity of a semiconductive material during an external stimulus (the on-state) and the conductivity of a semiconductive material without an external stimulus (the off-state).
- In another embodiment of the present invention the deposit of material according to the present invention has a conductivity in the range of 1×10−5-1×108 S/m, preferably in the range of 0.1-1×107S/m and most preferably in the range of 1×103-1×106S/m.
- In another embodiment of the present invention the deposit of material according to the present invention has a sheet resistance in the range of 1×10−6-1×104 Ohm/square, preferably in the range of 1×10−5-1×103 Ohm/square and most preferably in the range of 1×10−4-1×102 Ohm/square.
- In yet another embodiment of the present invention the deposit of material according to the present invention has a carrier mobility of above 10−5 cm2/(Vs), preferably above 10−3 cm2/(Vs) and most preferably above 10−1 cm2/(Vs).
- In yet another embodiment of the present invention the deposit of material according to the present invention is semiconductive having a bandgap in the range of 0.001 to 10 electron volts, preferably in the range of 0.01 to 5 electron volts and most preferably in the range of 0.1 to 1.0 electron volts.
- In many electrical devices the use of a deposit comprising carbon nanobud molecules also reduces fabrication costs. For example, in the fabrication of FEDs having a large area, the conventional micro tip technology requires the usage of expensive semiconductor processing equipment. Also, the manufacturing of transparent electrodes from the conventional ITO is expensive in part due to the shortage and the high price of indium and due to the high temperature vacuum processes often needed for manufacturing ITO electrodes. The micro tip technology as well as transparent ITO electrodes could be replaced by using a deposit comprising carbon nanobud molecules as will be described below.
- In one embodiment of the present invention the electrical device according to the present invention is a transistor or a field effect transistor. In these devices e.g. high on-off ratios, high conductivity and controllable semiconductivity may be required from the deposit comprising carbon nanobud molecules depending on the part of the device structure where the deposit resides.
- In another embodiment of the present invention the electrical device according to the present invention is a transparent electrode. In this application e.g. a high lateral conductivity may be required from the deposit comprising carbon nanobud molecules. The transparent electrodes comprising carbon nanobud molecules may be used e.g. in displays, in light sources or in solar cells.
- In yet another embodiment of the present invention the electrical device according to the present invention is a field emitter. A critical property of the deposit comprising carbon nanobud molecules in this application is the low work function which enables the emission of electrons from the deposit even with weak electric fields. This improves the efficiency of the field emitter structure.
- In yet another embodiment of the present invention the electrical device according to the present invention is a light source, a display element, a capacitor, a solar cell or a sensor. These devices may take advantage of the deposit comprising carbon nanobud molecules in many ways. The devices may incorporate e.g. transparent electrodes and field emitters. A capacitor or a supercapacitor may take advantage of the nanoporous structure of the deposit comprising carbon nanobud molecules and a solar cell and a sensor may exploit the conductivity and/or the controllable semiconductivity of the deposit comprising carbon nanobud molecules. In particular a sensor but also the other electrical devices mentioned above may exploit the variable conductivity of a deposit comprising carbon nanobud molecules due to an external stimulus. More precisely the conductivity of the deposit may be affected by e.g. adsorption or other bonding of molecules adhering to the fullerene parts in the deposit. Also variations in temperature or radiation interacting with the deposit comprising carbon nanobud molecules may affect the conductivity of the deposit.
- In the following, the present invention will be described in more detail with references to the accompanying figures, in which
-
FIG. 1 (Prior Art) presents five different molecular models for a carbon nanobud molecule in which a fullerene or fullerene-like molecule is covalently bonded to a tubular carbon molecule, -
FIG. 2 a schematically presents the arrangement of the carbon nanobud molecules in a deposit according to one embodiment of the present invention, -
FIG. 2 b schematically presents the random orientation of the carbon nanobud molecules according to one embodiment of the present invention. -
FIG. 2 c schematically presents the essentially parallel orientation of the carbon nanobud molecules according to one embodiment of the present invention. -
FIG. 3 schematically presents a field effect transistor structure according to one embodiment of the present invention and -
FIG. 4 schematically presents a lateral field emitter structure according one embodiment of the present invention. -
FIG. 5 schematically presents a vertical field emitter structure according one embodiment of the present invention. -
FIG. 6 schematically presents a capacitor structure according one embodiment of the present invention. -
FIG. 7 schematically presents a solar cell structure according one embodiment of the present invention. -
FIG. 8 schematically presents a sensor structure according to one embodiment of the present invention. -
FIGS. 9 a to 9 c schematically illustrate the fabrication of a field emission light source structure according to one embodiment of the present invention. -
FIGS. 10 a to 10 b schematically illustrate the fabrication of a solar cell according to one embodiment of the present invention. -
FIGS. 11 a to 11 b schematically illustrate the fabrication of a capacitor according to one embodiment of the present invention. -
FIGS. 12 a to 12 c schematically illustrate the fabrication of a capacitor according to one embodiment of the present invention. - As depicted in
FIG. 2 a the carbon nanobud molecules may bond to the next carbon nanobud molecule in a deposit comprising carbon nanobuds via a fullerene or fullerene-like part 2 of the molecule. A fullerene or fullerene-like part 2 of the carbon nanobud molecule is covalently bonded to the outer side of thetubular part 1 of the same molecule. The bond or thebonding part 3 of the molecule may comprise several atoms as illustrated inFIG. 1 . The bonding scheme inFIG. 2 a is illustrated two-dimensionally, but the orientation of the individual carbon nanobud molecules may be random or aligned as illustrated inFIGS. 2 b and 2 c, respectively. - The conductivity of an individual carbon nanobud molecule is controlled by the chirality of the
tubular part 1 of the molecule and by the concentration of fullerene or fullerene-like molecules. Increasing the fullerene concentration increases the fraction of semiconducting tubes. This opens up the possibility to fabricate e.g. semiconductive or conductive (metallic) carbon nanobud molecules. Correspondingly by controlling the density, the length (in the direction of the conductive pathway), the width and the thickness of the deposit and the relative amount of conductive and semiconductive molecules in a deposit according to the present invention one can produce conductive or semiconductive deposits. The semiconductivity of the deposit can further be controlled in the same way. - A random distribution (
FIG. 2 b) or aligned orientation (FIG. 2 c) of a plurality of carbon nanobud molecules in a film or other deposit ensures that the network of these molecules contains many possible paths for current flow in the deposit. Therefore the deposit comprising carbon nanobud molecules according to the present invention is not dependent on the functioning of an individual molecule. This improves the reliability of devices exploiting deposits comprising carbon nanobud molecules as opposed to devices in which the flow of current depends on an individual conducting molecule. According to one embodiment of the invention, partial alignment of the network can be used to increase or decrease the number of conductive pathways in a particular direction. Furthermore, according to one embodiment of the present invention the essentially parallel alignment of carbon nanobud molecules in the deposit according to the present invention provides a way to fabricate a plurality of single-molecule electrical devices in parallel. The essentially parallel conductive paths can be used to reduce the dependency of e.g. a circuit on the operation of one device. - Nanobud molecules may be aligned according to the following technique. An aerosol comprising nanobuds is introduced into a narrow slit, for instance, in a plate. The gap height is preferably less than 100 times the average length of the nanobud or nanotube bundle length and more preferably less than 50 times the average length of the nanobud or nanotube bundle length and most preferably less than 20 times the average length of the nanobud or nanotube bundle length. The gap length is preferably greater than 5 times the gap height and more preferably greater than 10 times the gap height and most preferably greater than 20 times the gap height. A substrate can be affixed in the gap to provide a means of depositing on a secondary substrate. Furthermore, the substrate can be cooled or charged to enhance the deposition by thermophoresis or electrophoresis.
- A nanobud deposition unit for aligned deposition of nanobud molecules is constructed by affixing a
flat metal plate 5 mm thick perpendicular the axis of atube 1 cm in diameter such that an aerosol flow of nanobuds in a carrier gas must pass through slits in the plate. The metal plate has 5 parallel slits laser cut perpendicular to the face of the plate. The slits are 0.25 mm high and 7.0 mm wide and separated by 1 mm. An aerosol comprising nanobud bundles about 1 micrometer in diameter is introduced into the tube and flows through the slits, whereupon a fraction of the tubes, approximately aligned to the flow, deposits on the sidewalls of the slit. - The unique bonding scheme of
FIG. 2 a of a carbon nanobud deposit together with the molecular structure of an individual carbon nanobud molecule (seeFIG. 1 ) results in a very useful set of properties for the deposit according to the present invention. The ability of a fullerene group to bond to another carbon nanobud molecule results in the exceptional electrical, thermal and mechanical stability of deposits comprising these molecules, and increases the separation of the tubular sections of the nanobud molecules, thus increasing nano-porosity and specific surface area. The strong intermolecular bonding efficiently prevents the slipping of individual molecules with respect to each other and increases charge trans-fer between individual molecules. The stability of the deposit according to the present invention is further enhanced by the strong intramolecular covalent bonds of a carbon nanobud molecule. - The ability to easily functionalize the carbon nanobud molecules allows, for instance, a dye or otherwise photo active functional group to be bonded to the molecule so as to provide a means of exciting an electron by means of electromagnetic radiation or to otherwise modify the function of molecules in a deposit comprising carbon nanobud molecules.
- The properties of the deposit according to the present invention may include a low work function with field thresholds of e.g. around 0.65 V/μm, extremely high conductivity with a current carrying capacity of e.g. around 1010 A/cm2 and an extremely high electron mobility of even up to e.g. 100000 cm2/(Vs). Additionally the carbon-based deposit comprising carbon nanobud molecules has a high thermal conductivity which alleviates problems related to heat extraction from high-power electrical devices. All of these properties are a result of the atomic structure of the deposit comprising carbon nanobud molecules. The carbon nanobud deposits combine and enhance the useful properties of carbon nanobud molecules and the advantages of using a carbon nanobud deposit instead of a single molecule in an electrical device, as discussed above.
- The bonds between adjacent molecules in the carbon nanobud deposit may not be covalent but have an ionic nature or are of the Van der Waals type. Nevertheless a fullerene or fullerene-
like part 2 of the molecule serves as an active group which can be further functionalized and is able to form strong bonds between individual carbon nanobud molecules. These molecular properties significantly simplify the fabrication of stable deposits from carbon nanobud molecules. Thefullerene part 2 of the carbon nanobud molecule also brings asymmetry to the molecular structure which may help in aligning the molecules to a specific orientation during deposition of a deposit according to the present invention. Molecular alignment may be useful in tailoring e.g. the electrical properties of the deposit for a specific application. This type of manipulation of the deposit may also be used to locally control the conductivity of the deposit. - The deposits comprising carbon nanobud molecules according to the present invention may be deposited using commonly known methods of e.g. filtration from gas phase or from liquid, deposition in a force field and deposition from a solution using spray coating or spin drying. The carbon nanobud molecules can also be suspended in solution and sprayed or spin coated onto e.g. a silicon wafer to form e.g. a film. The carbon nanobud molecules can also be grown on a surface.
- The
FET structure 18 ofFIG. 3 according to one embodiment of the present invention comprises aconductive gate layer 4 and an insulatinglayer 5 above theconductive gate layer 4. The device further comprises asource electrode 6, adrain electrode 8 and achannel layer 7 in between thesource electrode 6 and thedrain electrode 8 above the insulatinglayer 5. Thechannel layer 7 is in electrical contact with thesource electrode 6 and thedrain electrode 8. Thechannel layer 7 in the device is a semiconductive deposit comprising carbon nanobud molecules. Furthermore theconductive gate layer 4, theconductive source electrode 6 and theconductive drain electrode 8 may also comprise carbon nanobud molecules to enhance the mechanical, electrical and thermal properties of these layers or to simplify fabrication. The conductivity of theconductive gate layer 4, theconductive source electrode 6 and theconductive drain electrode 8 may be increased by increasing the amount of conductive nanobud molecules within the deposits. - The exemplary device in
FIG. 3 according to one embodiment of the present invention operates like a conventional FET although thedevice structure 18 is inverted compared to conventional FET structures in the sense that theconductive gate layer 4 is below thesource electrode 6 and thedrain electrode 8. Thechannel layer 7 being a semiconductive deposit comprising carbon nanobud molecules provides the device with a channel of high conductivity in the on-state of the transistor and high electron mobility. This, together with high on-off ratios, enables superior performance including high switching speeds and reduced power consumption for theexemplary device 18 ofFIG. 3 compared to conventional FET devices where the channel is made of e.g. single crystalline silicon. Furthermore the high thermal conductivity of thechannel layer 7 enables more efficient heat extraction from devices operated at a high power. This brings flexibility to the design of FET structures. Furthermore the stability of the deposit comprising carbon nanobud molecules improves the reliability and increases the lifetime of the device. - The embodiment of
FIG. 3 may also have theconductive gate layer 4 formed of e.g. p-doped silicon, and the insulatinglayer 5 may be e.g. silicon dioxide (SiO2) or other insulating material with e.g. a higher dielectric constant κ. Thesource electrode 6 and thedrain electrode 8 may also be of conductive material e.g. metal, but also, for instance, doped polysilicon may be used. Theconductive gate layer 4, thesource electrode 6 and thegate electrode 8 may also comprise carbon nanobud molecules to enhance the mechanical, electrical and thermal properties of these layers. Ultimately the choice of materials to realize thestructure 18 of the embodiment ofFIG. 3 is obviously governed by the requirements that transistor operation poses on the energy levels of carriers. - The deposit comprising carbon nanobud molecules possesses a low work function required for cold emission of electrons. This property may be exploited in e.g. a lateral
field emitter structure 17 such as the one inFIG. 4 . Thestructure 17 comprises an insulatingsubstrate 9, an extractingelectrode 10, acathode electrode 13 and anelectron emitter 12. The structure further comprises avacuum gap 16 between thecathode electrode 13 and ananode electrode 15 and a light emitting layer 14 over theanode electrode 15. Theelectron emitter 12 may be a deposit comprising carbon nanobud molecules. Theelectron emitter 12 and thecathode electrode 13 are in electrical contact with each other. Furthermore the extractingelectrode 10 and thecathode electrode 13 may also be deposits comprising carbon nanobud molecules. - When a voltage Vf is applied between the extracting
electrode 10 and thecathode electrode 13 theelectron emitter 12 emits electrons into thevacuum gap 16 between thecathode electrode 13 and theanode electrode 15. The electron emission occurs towards the extractingelectrode 10 when the voltage Vf exceeds a threshold value dictated by the work function of theelectron emitter 12. In theexemplary structure 17 ofFIG. 4 there is also a voltage Va applied between thecathode electrode 13 and theanode electrode 15. After extraction from theelectron emitter 12 the velocity vector of the extracted electron begins to turn towards theanode electrode 15 as a result of the electric field generated by Va. The electric field in thevacuum gap 16 is such that electrons follow curved trajectories and eventually impinge on the light emitting layer 14 as illustrated inFIG. 4 . The curvature of the electron trajectories depends on the ratio of the applied voltages Vf and Va. The impinging electrons excite the light emitting layer 14 which may be e.g. of phosphorous material. The lateralfield emitter structure 17 may be utilized as a light emitting component in e.g. field emitting displays (FEDs) or in solid-state lighting. -
FIG. 5 presents another field emitter structure according to the present invention comprising deposit comprising carbon nanobud molecules. The device is a verticalfield emitter structure 19 comprising acathode electrode 20, anelectron emitter 21, avacuum gap 22, alight emitting layer 23 and ananode electrode 24. Theelectron emitter 21 may be a deposit comprising carbon nanobud molecules. Thecathode electrode 20 and theelectron emitter 21 are in electrical contact with each other. When a voltage Va above a threshold value dictated by the work function of theelectron emitter 21 is applied between theanode electrode 24 and thecathode electrode 20 theelectron emitter 21 emits electrons over thevacuum gap 22 to thelight emitting layer 23. The trajectories of the emitted electrons are essentially straight in thisfield emitter configuration 19. When the emitted electrons impinge on thelight emitting layer 23 which is of e.g. phosphorous material, thelight emitting layer 23 emits light. The verticalfield emitter structure 19 may be utilized as a light emitting component in e.g. field emitting displays (FEDs) or in solid-state lighting. - The
electron emitters field emitter structures electron emitters field emitter structure 17 is also sufficient to produce the required curved trajectory for the electrons. The lower operating voltages Va and Vf reduce the power consumption of the corresponding light emitting component in e.g. FEDs or solid state light sources. The high conductivity of the deposit comprising carbon nanobud molecules also reduces resistive losses in thefield emitter structures - Furthermore the stability of the deposit comprising carbon nanobud molecules improves the reliability and increases the lifetime of the
structures - Another example of an electrical device in which the deposit comprising carbon nanobud molecules can be applied is a transparent electrode. Incidentally the exemplary embodiments of
FIGS. 4 and 5 comprise such a device. Theanode electrodes light emitting layers 14, 23 can be transmitted through thetransparent electrodes - A deposit comprising carbon nanobud molecules can be used as a transparent electrode since, due to the deposit's high conductivity, a low sheet resistance is attained even with very thin deposits. As the conductive deposit is very thin it is still able retain its transparency to light. Furthermore the stability of the deposit comprising carbon nanobud molecules improves the reliability and increases the lifetime of the transparent electrode.
- The exemplary capacitor (e.g. a supercapacitor)
structure 31 ofFIG. 6 comprises afirst electrode 25, asecond electrode 27 and anelectrolyte layer 26 between thefirst electrode 25 and thesecond electrode 27. In thisstructure 31 either thefirst electrode 25 or thesecond electrode 27 or both of theelectrodes FIG. 6 theelectrodes capacitor 31. Theelectrolyte 26 may be a solid or a compressible ionic conductor that provides charge to the electrode-electrolyte interface from the side of theelectrolyte 26. The tubular structure of an individual nanobud molecule results in a nanoporous structure for theelectrodes like parts 2 of the carbon nanobud molecules may act as separators between individual nanobud molecules in a deposit, as shown inFIG. 2 a. This reduces the possible packing of individual molecules close to each other in the deposit, which further increases the surface area of the deposit. As a result theelectrodes device 31. To efficiently take advantage of this surface area theelectrolyte 26 is preferably of material that is able to penetrate the pores of the carbon nanobud deposit of theelectrodes electrodes - The
solar cell structure 32 schematically presented inFIG. 7 comprises asemiconductive layer 29 sandwiched in between two electricallyconductive electrodes 28, 30. All of thelayers electrodes 28, 30 an electrically conductive network of carbon nanobud molecules may be used to form a transparent conductive layer which permits electromagnetic radiation to pass with little absorption. Theseelectrodes 28, 30 enabled by the deposit comprising carbon nanobud molecules possess a high lateral conductivity required for efficient low-loss solar cell operation. - The
semiconductive layer 29 inFIG. 7 comprises a semiconductive network of nanobud molecules the electrical conductivity of which may be controlled by the chirality of the nanobud molecules as discussed above. In a network of carbon nanobud molecules the strong intermolecular bonding via the fullerene group increases charge transfer between individual nanobud molecules providing a highly conductive path for carriers throughout the network. In thesemiconductive layer 29 the increased charge transfer reduces resistive losses as charges are collected to the transparent electrodes. The fullerene part of the carbon nanobud molecules further enables the functionalization of the molecules to increase the absorption of electromagnetic radiation so as to, for instance, excite electrons from the valence band to the conduction band in thesemiconductive layer 29. The high electrical conductivity of theelectrodes 28, 30 and the good stability properties of all of thelayers cell structure 32. - The
sensor structure 33 schematically presented inFIG. 8 comprises asubstrate 34, a conductive orsemiconductive layer 35 and aprotective coating 36, if required. Thelayer 35 inFIG. 8 comprises a network of nanobud molecules, which may be functionalized via a fullerene part to e.g. enhance the layer's and the sensor's responsivity to electromagnetic radiation or other external stimuli. Additionally since the conductivity or semiconductivity of thelayer 35 comprising carbon nanobud molecules is controllable as discussed above thesensor structure 33 may be tailored to be sensitive to various kinds of stimuli in various kinds of environments. Furthermore in a network of carbon nanobud molecules the strong intermolecular bonding via the fullerene group increases charge transfer between individual nanobud molecules providing a highly conductive path for carriers throughout the network. The increased charge transfer in thesemiconductive layer 35 reduces resistive losses in thedevice 33. The good stability properties of thenanobud layer 35 comprising carbon nanobud molecules further improves the reliability and the efficiency of thesensor structure 33. - The
exemplary sensor structure 33 operates resistively. A voltage is connected over thedeposit 35 while an external stimulus, e.g. electromagnetic radiation, alters the conductivity of thenanobud layer 35. The changes in conductivity can be observed e.g. by measuring the current (I) flowing e.g. laterally through thenanobud layer 35 as illustrated inFIG. 8 . - In one embodiment of the invention the
nanobud layer 35 may stand alone in a sensor structure in the sense that nosubstrate 34 is needed to support the other layers of the structure. Furthermore, external stimuli to the sensor structure according to the present invention may be e.g. in the form of a field, for instance, electric field, temperature, radiation, for instance, electromagnetic radiation, or adsorbed or bonded molecules and so the device can serve e.g. as an electric field, radiation, temperature or gas or liquid sensor. Moreover, as the density of the deposit comprising carbon nanobud molecules can be modified by the application of an external force or pressure and thus change the number and quality of interconnects between nanobud molecules, such a deposit can serve e.g. as a pressure sensor or accelerometer. - The thickness of the deposits comprising carbon nanobud molecules in the above examples may be e.g. in the range of 1 nm to 10 cm. In this range the deposits comprising carbon nanobud molecules are feasible to fabricate and continuous so the deposit's properties do not suffer from discontinuities in the deposit.
- In the following the fabrication of electrical devices comprising carbon nanobud molecules is described in detail. The following methods are presented as examples for some embodiments of the present invention. The nanobud molecules used in the examples are commercially available from Canatu Oy and can be synthesized using the method disclosed in patent application publication WO/2007/057501. In order to synthesize carbon nanobud molecules with a fullerene concentration of 1 fullerene per nm, the H2O and CO2 concentrations in the synthesis reactor, in the method disclosed in publication WO/2007/057501, are 135 ppm and 4000 ppm, respectively. The corresponding H2O and CO2 concentrations to synthesize carbon nanobud molecules with a fullerene concentration of 1 fullerene per 10 nm are 100 ppm and 500 ppm, respectively.
- Transparent Electrode
- A transparent electrode according to one embodiment of the present invention is manufactured according the following procedure. A nanobud synthesis reactor is operated at a furnace set temperature of 1000° C. The nanobud product is collected on a nitrocellulose filter and the reactor is operated at conditions where the nanobud product has a concentration of approximately 1 fullerene per 10 nm. The resulting film is pressed against a transparent PE substrate outside the synthesis reactor, and the deposit is transferred from the nitrocellulose filter to the PE substrate at room temperature. The resulting layer is first dipped in ethanol and then in nitric acid. The nitric acid treatment increases the conductivity of the nanobud layer by about ten times and the ethanol treatment increases the conductivity of the nanobud layer by an additional five times. These treatments do not affect the transparency of the nanobud layer. As an example the sheet resistance of the resulting nanobud film was measured to be about 500 ohms/square, 100 ohms/square and 30 ohms/square for a transmittance of 90%, 50% and 40% at 550 nm wavelength, respectively. The transparent electrodes comprising carbon nanobud molecules fabricated with the disclosed method may be used e.g. in displays, in light sources or in solar cells.
- Field Effect Transistor
- A bottom gate field effects transistor according to one embodiment of the present invention is manufactured according the following procedure. A bottom-gate transistor is fabricated by depositing nanobud networks having a concentration of approximately 1 fullerene per nanometer on a highly B-doped Si substrate coated with a thermally grown SiO2 (100 nm), acting as a gate dielectric. A 300 nm layer of Pt is sputtered on the back-side for better conductivity. Prior to the nanobud deposition, a photolithography step of AZ polymer deposition with open windows is performed. After the lift-off in acetone the nanobud network is patterned on the substrate. Subsequently a second photolithography step deposits PMMA with open windows for subsequent metal electrode deposition. The source and drain electrodes (30 nm Ti and 200 nm Au) contacting the nanobud transistor channels are deposited using electron beam evaporator. Then the lift-off process to remove the AZ polymer and unnecessary metal is performed.
- Sensor
- A sensor according to one embodiment of the present invention is manufactured according the procedure similar to FET manufacturing procedure. Sensors are fabricated by depositing nanobud networks on a highly B-doped Si substrate coated with a thermally grown SiO2 (100 nm), acting as a gate dielectric. Prior to the nanobud deposition, the source and drain electrodes (30 nm Ti and 200 nm Au), for further contacting the nanobud network channels, are deposited using an electron beam evaporator. In order to avoid the electrical contacts between different sensor devices excessive CNTs are etched by laser. A 300 nm layer of Pt is sputtered on the back-side for better conductivity, and the Pt layer can be used to bias the gate electrode. The sensors can be operated either in the gas or liquid phases to sense gaseous and liquid molecules.
- Field Emission Light Source
- A field emission light source according to one embodiment of the present invention is manufactured according to the following procedure. The procedure is schematically presented by the series of
FIGS. 9 a to 9 c, whereFIG. 9 a represents the cross sectional structure of the device in the beginning of the process, andFIG. 9 c represents the cross sectional structure of the device at the end of the process. The device can be a “stand alone” device or be all or part of a pixel in a display device. A nanobud synthesis reactor is operated at a furnace set temperature of 1000° C. The product is collected on two nitrocellulose filters, and the reactor is operated at conditions where the nanobud product has a concentration of approximately 1 fullerene per nm. One of the resultingfilms 41 is pressed against agold substrate 39 at a temperature of 100 C, and the deposit is transferred from the filter to thegold substrate 39. A glass substrate 37 (e.g. 1 cm̂2 and 0.5 mm thick) is epoxyed to the nanobud coatedgold substrate 39 and anepoxy layer 40 is left in between theglass substrate 37 and thegold layer 39. Asecond nanobud film 41 is pressed against aglass substrate 37 coated with a P20 ((Zn, Cd)S:Ag)phosphor 38 and thenanobud deposit 41 is transferred from the filter to the phosphor coatedglass substrate 37 at room temperature. Gold electrodes (not shown in the figures) are sputtered at two opposing edges of the nanobud and phosphor coatedglass 37. The resulting layered substrate with thephosphor 38 andnanobud 41 coatings is first dipped in ethanol and then in nitric acid. The first and second substrates are glued together with the nanobud coated surfaces 41 facing inward in high vacuum to create avacuum gap 43 between them usingspacer elements 42. When a current is applied between the two coated substrates on each side of thevacuum gap 43, the device operates as a light source. - Solar Cell
- A solar cell according to one embodiment of the present invention is manufactured according the following procedure. The procedure is schematically presented by the series of
FIGS. 10 a to 10 b, whereFIG. 10 a represents the cross sectional structure of the device in the beginning of the process, andFIG. 10 b represents the cross sectional structure of the device at the end of the process. A nanobud synthesis reactor is operated at a furnace set temperature of 1000° C., and the reactor is operated at conditions where the nanobud product has a concentration of approximately 1 fullerene per 10 nm. The product is collected on a nitrocellulose filter. The resultingnanobud film 45 is pressed against atransparent PE substrate 44 and thedeposit 45 is transferred from the filter to thePE substrate 44 at room temperature. The resultingfirst nanobud layer 45 is first dipped in ethanol and then in nitric acid to create a transparent electrode. A second layer ofnanobuds 46 collected from nanobud synthesis reactor operated at a furnace set temperature of 1000° C., and at conditions where the nanobud product has a concentration of approximately 1 fullerene per nm is prepared on a glass filter. The sample is submerged in a 20 wt % solution of polyethylene imine (PEI) in methanol overnight, followed by thorough rinsing with methanol. The sample is then dipped in a photosensitive ruthenium-polypyridine dye and ethanol. After soaking the film in the dye solution and then drying, a thin layer of the dye is left covalently bonded to the surface of the nanobuds. The nanobud-dye-layer 46 is then transferred to the transparent electrode and on thefirst nanobud layer 45 by pressing the two nanobud layers together. A separate backing is made with a thin layer of iodide electrolyte 47 spread over aconductive platinum sheet 48. The front part with the nanobud layers 45, 46 and the back part with the iodide electrolyte 47 on aplatinum sheet 48 are then joined and sealed together to prevent the electrolyte 47 from leaking. This structure is used as a solar cell. - Solar Cell
- A solar cell according to one embodiment of the present invention is manufactured according the following procedure. The procedure is schematically presented by the series of
FIGS. 12 a to 12 c, whereFIG. 12 a represents the cross sectional structure of the device in the beginning of the process, andFIG. 12 c represents the cross sectional structure of the device at the end of the process. A nanobud synthesis reactor is operated at a furnace set temperature of 1000° C., and the nanobud product is collected on two nitrocellulose filters in two synthesis processes. The reactor is operated at conditions where the nanobud product on one nitrocellulose filter has a concentration of approximately 1 fullerene per nm and on the other nitrocellulose filter the nanobud product has a concentration of approximately 1 fullerene per 10 nm. The resultingnanobud film 53 having approximately 1 fullerene per 10 nm is pressed against atransparent PE substrate 52 and theother nanobud film 53, having approximately 1 fullerene per nm is pressed against aplatinum substrate 57. Thenanobud films 53 are then transferred from the nitrocellulose filter to thePE 52 andplatinum 57 substrates at room temperature. - Both of the
nanobud films 53 are first dipped in ethanol and then in nitric acid to create a transparent electrode comprising thePE substrate 52 and an opaque electrode comprising theplatinum substrate 57. Athin buffer layer 54 of PEDOT:PSS is spin coated on the transparent electrode and dried at 100° C. in atmosphere. A solution of P3HT and toluene is spin coated on the PEDOT:PSS layer 54 in a nitrogen atmosphere to create an approximately 0.1 micronthick deposit 55. A third layer ofnanobuds 56 collected from a nanobud synthesis reactor operated at a furnace set temperature of 1000° C., and at conditions where the nanobud product has a concentration of approximately 1 fullerene per nm, is prepared on a glass filter. Thethird layer 56 is pressed against theP3HT layer 55 at 130° C. to transfer thelayer 56 and imbed thethird nanobud layer 56 into theP3HT layer 55. Thenanobud film 53 on theplatinum substrate 57 is then pressed against the P3HT/nanobud composite layer 58, and this resulting structure is used as a solar cell. - Capacitor (Super Capacitor)
- A super capacitor according to one embodiment of the present invention is made by depositing several layers of nanobuds. The procedure is schematically presented by the series of
FIGS. 11 a to 11 b, whereFIG. 11 a represents the cross sectional structure of the device in the beginning of the process, andFIG. 11 b represents the cross sectional structure of the device at the end of the process. One conductive layer ofnanobuds 50 is deposited on a substrate by collecting the aerosol product from a floating catalyst aerosols reactor on a nitrocellulose filter. In the following examples, the nanobuds are transfer deposited either on a non-conductive substrate (PE) 49 or a conductive substrate 49 (e.g. nanotubes, nanobuds, gold or aluminium). When transfer deposited on anon-conductive substrate 49, thenanobud layer 50 acts as both the collector and the porous electrode. In the case of a separate conductive collector, the first and second conductive collectors may be any highly conductive or superconductive material. Examples include conductive metals (e.g., copper, aluminium, nickel or stainless steel), superconductive ceramics, and the like. The super capacitor can be of other designs, including, without limitation, stacked and spiral-wound configurations. The nanobuds may be deposited either on the conductive ornon-conductive substrate 49 by other known techniques to form the anode and the cathode electrode layers. For efficient charge storage, ideally, each electrode should contain nanobuds with diameters corresponding to approximately three times the diameter of the corresponding ion responsible for charge storage in the electrode. The diameter of the nanobud molecule should be understood as the diameter of the tubular part of the molecule. - To form the
electrolyte layer 51, any of a number of methods known in the art are possible according to the invention. In the following examples, an ionic liquid is generally understood to be a liquid composed almost entirely, if not completely, of ions. An ionic liquid commonly acts as both a salt and solvent or is said to be 100% salt and 100% solvent. - In one method (method 1) to form the
electrolyte layer 51, a polymer host is dissolved in a solvent (preferably a solvent for the polymer host). In this example the solvent is 1-methyl-2-pyrrolidinone (NMP). Other solvents are possible. Various polymer hosts are possible. In this case PVdFHFP/[EMIM][Tf2N]. PVdF-HFP is used. 0.34 g of PVdF-HFP powder is dissolved in 1.7 ml of NMP under magnetic stirring for three hours. When the polymer host is fully dissolved in the solvent, the solution is mixed with an appropriate amount of ionic liquid to allow gellation of the polymer with the ionic liquid. Various ionic liquids are possible (in this case [EMIM] [Tf2N] is used). The resulting polymer solution is then mixed with 0.8 ml of [EMIM] [Tf2N] under magnetic stirring for two hours to complete the polymer gellation with the ionic liquid. 0.4 ml of the obtained homogeneous polymer-solvent-ionic liquid mixture is then poured onto a substrate, in this case a piece of glass slide (surface area about 6.25 cm2). Heating this solution-containing glass slide at 110° C. under vacuum (22 InHg) for fifteen hours completely evaporates the solvent NMP and forms a uniform and transparent PVdFHFP/[EMIM][Tf2N] film. The freestanding andselfsupporting electrolyte film 51 is easily separated from the substrate for later assembly of the super capacitor. - Another method (method 2) for producing the
electrolyte layer 51 is described here. In this method, inorganic particulate fillers are introduced into the previously described electrolyte frommethod 1 to enhance its mechanical strength and decrease the level of polymer crystallinity. Similar tomethod 1, a polymer solution is prepared by dissolving a polymer host, in this case 0.34 g of PVdF-HFP in a solvent (though other polymers and amounts are possible), in this case 1.7 ml of NMP (though other polymers and amounts are possible) and stirring for three hours (though longer or shorter times are possible). The resultant solution is mixed with an ionic liquid, in this case 0.8 ml [EMIM] [Tf2N] (though other ionic liquids and amounts are possible), and an appropriate amount of inorganic particulate (in this case 0.02 g zeolite was the inorganic particulate filler though other fillers and amounts are possible) for two hours ensuring the complete dispersion of the filler powder in the solution and the gellation of polymer with the ionic liquid. The resulting mixture is processed by solution casting on a non-adhesive substrate, in this case a glass slide with a surface area of 6.25 cm2 (though other substrates are possible). The solvent-cast film is heated, in this case at 110° C. (though other temperatures are possible) under vacuum (though atmospheric and overpressure are possible) to evaporate essentially all of the solvent to form an inorganic filler-embodied electrolyte film. The obtainedelectrolyte layer 51 can be peeled easily from the substrate for later assembly of the super capacitor. - In a third method (method 3) for producing the electrolyte layer 51 a pre-made microporous and permeable polymer separator, in this case (PTFE) membrane (thickness: 23 μm, pore size: 0.05-15 μm, porosity: 50-70%) obtained from W.L. Gore & Associates (though other permeable membranes are possible), is impregnated with a selected ionic liquid (in this case 0.5 ml [EMIM] [Tf2N], though other ionic liquids and amounts are possible). The preformed, microporous and permeable polymer membrane is contacted with the ionic liquid by placing the membrane in a bath of the ionic liquid. In this case, this is done by soaking a piece of PTFE membrane (
dimensions 2×2 cm2) in a pan containing the [EMIM] [Tf2N]. The polymer membrane, while contacted with the ionic liquid or ionic liquid/solvent mixture, is heated to directly swell/gel the polymer host, in this case at 110° C. and under vacuum (22 InHg) for fifteen hours (though other temperatures, times and pressure conditions are possible) to form theelectrolyte layer 51. The resultant electrolyte membrane is removed from the ionic liquid and the excess ionic liquid on the membrane is removed, in this case by hanging the membrane for a few minutes (though other methods of removing the excess liquid are possible). - The super capacitor is assembled by sandwiching the anode and
cathode nanobud electrodes 50 andelectrolyte layer 51 between the two supportingsubstrates 49 which can be current collectors or non-conductive substrates (e.g. PE). Edges of the capacitor are sealed with epoxy (not shown in the figures). One piece of the electrolyte layer 51 (thickness: about 100 μm) can be used directly as a separator for capacitor fabrication. - Another means of producing super capacitors involves using plasma-etched nanobuds in the electrodes. The super capacitors are produced as in
methods - The super capacitors fabricated according to the aforementioned exemplary methods can have highly attractive properties. By way of example, the power density of the super capacitors can be at least about 10 kW/kg with an energy density of at least about 10 Wh/kg.
- As is clear for a person skilled in the art, the invention is not limited to the examples described above but the embodiments can freely vary within the scope of the claims.
Claims (16)
1-14. (canceled)
15. A deposit of material comprising carbon nanobud molecules, characterized in that the carbon nanobud molecules are bonded to each other via at least one fullerene group (2) such that a fullerene group (2) of a carbon nanobud molecule is bonded to a fullerene group (2) of another carbon nanobud molecule.
16. The deposit of material of claim 15 , characterized in that the carbon nanobud molecules form a network of electrically conductive paths.
17. The deposit of material of claim 15 characterized in that the carbon nanobud molecules form an essentially parallel array of electrically conductive paths.
18. The deposit of material of claim 15 characterized in that the carbon nanobud molecules are functionalized via at least one fullerene group so as to provide a means of exciting an electron by means of electromagnetic radiation.
19. The deposit of material of claim 15 characterized in that said deposit has an on-off ratio above 1, preferably above 1×102 and most preferably above 1×104.
20. The deposit of material of claim 15 characterized in that the semiconductivity of said deposit is controllable by the density of the deposit, the length of the deposit in the direction of the conductive pathway, the width of the deposit in the direction perpendicular to the conductive pathway, the thickness of the deposit, by the concentration of fullerene or fullerene-like appendages and/or by the relative amount of conductive and semiconductive molecules in the deposit.
21. An electrical device characterized in that said device comprises a deposit comprising carbon nanobud molecules, wherein a fullerene group (2) of a carbon nanobud molecule is bonded to a fullerene group (2) of another carbon nanobud molecule.
22. The electrical device of claim 21 characterized in that said deposit serves the function of carrier transport or carrier storage.
23. The electrical device of claim 21 characterized in that said device is a transistor.
24. The electrical device of claim 23 characterized in that said transistor is a field effect transistor (18).
25. The electrical device of claim 21 characterized in that said device is an electrode or transparent electrode (15, 24, 28, 30).
26. The electrical device of claim 25 characterized in that said electrode or transparent electrode is a transparent electrode in a display, in a light source or in a solar cell (32).
27. The electrical device of claim 21 characterized in that said device is a field emitter (17, 19).
28. The electrical device of claim 21 characterized in that said device is a light source, a display element, a capacitor (31), a solar cell (32) or a sensor (33).
29. The deposit of material of claim 16 characterized in that the carbon nanobud molecules form an essentially parallel array of electrically conductive paths.
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PCT/FI2008/050618 WO2009056686A1 (en) | 2007-10-30 | 2008-10-30 | A deposit and electrical devices comprising the same |
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US (1) | US20100329964A1 (en) |
EP (2) | EP2217530A4 (en) |
JP (2) | JP5616227B2 (en) |
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FI (1) | FI20075767A0 (en) |
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Also Published As
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JP2014209630A (en) | 2014-11-06 |
EP2217530A1 (en) | 2010-08-18 |
RU2010115219A (en) | 2011-12-10 |
JP2011505312A (en) | 2011-02-24 |
EP2217530A4 (en) | 2011-02-16 |
CN101842317A (en) | 2010-09-22 |
KR101513574B1 (en) | 2015-04-20 |
WO2009056686A1 (en) | 2009-05-07 |
CA2701295A1 (en) | 2009-05-07 |
RU2488552C2 (en) | 2013-07-27 |
FI20075767A0 (en) | 2007-10-30 |
AU2008320786B2 (en) | 2014-11-20 |
AU2008320786A1 (en) | 2009-05-07 |
CA2701295C (en) | 2017-09-26 |
JP5616227B2 (en) | 2014-10-29 |
CN101842317B (en) | 2013-02-20 |
KR20100091998A (en) | 2010-08-19 |
BRPI0818572A2 (en) | 2015-04-22 |
EP3028993A1 (en) | 2016-06-08 |
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