US20090188704A1 - Mounting substrate - Google Patents
Mounting substrate Download PDFInfo
- Publication number
- US20090188704A1 US20090188704A1 US12/357,693 US35769309A US2009188704A1 US 20090188704 A1 US20090188704 A1 US 20090188704A1 US 35769309 A US35769309 A US 35769309A US 2009188704 A1 US2009188704 A1 US 2009188704A1
- Authority
- US
- United States
- Prior art keywords
- induction heating
- mounting substrate
- solder ball
- substrate
- bonding pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 230000006698 induction Effects 0.000 claims abstract description 124
- 238000010438 heat treatment Methods 0.000 claims abstract description 105
- 229910000679 solder Inorganic materials 0.000 claims abstract description 96
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 239000010949 copper Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
Definitions
- Example embodiments relate to a mounting substrate and a method of manufacturing a semiconductor package using the same. More particularly, example embodiments relate to a mounting substrate to mount a semiconductor chip by applying an alternating magnetic field, and a method of manufacturing a semiconductor package having a semiconductor chip mounted on the mounting substrate.
- BGA ball grid array
- the BGA package using surface-mount technology has been developed to have an increased number of I/O pins to increase a mounting density. That is, in the BGA package, an electrical signal is inputted and outputted between the semiconductor chip and an external printed circuit board (PCB) through a solder ball that is adhered to a surface of the semiconductor package, to thereby increase the number of the I/O pins capable of being accommodated in the semiconductor package.
- SMT surface-mount technology
- the semiconductor chip is mounted on the mounting substrate by a reflow process or an infrared reflow process.
- both the semiconductor chip and the mounting substrate with the solder ball are heated to a temperature higher than the melting point of the solder ball. Accordingly, a stress concentrates in the solder ball due to a difference of the thermal expansion coefficient between the mounting substrate and the semiconductor chip, to deteriorate the reliability of a product during an inspection process such as a temperature cycling (TC) test, a drop test, a bending test, etc. Further, the mounting substrate may be warped by heat in the reflow process, to cause an adhesion failure of the solder ball.
- TC temperature cycling
- Example embodiments provide a mounting substrate to mount a semiconductor chip and capable of preventing deterioration of reliability due to thermal deformation.
- Example embodiments also provide a method of manufacturing a semiconductor package including a semiconductor chip mounted on the mounting substrate.
- a mounting substrate includes a substrate, a bonding pad and an induction heating pad.
- the bonding pad is formed on the substrate, and adhered to a solder ball to mount a semiconductor chip on the substrate.
- the induction heating pad is disposed adjacent to the bonding pad, the induction heating pad being induction heated by an applied alternating magnetic field to reflow the solder ball.
- the induction heating pad may include a diameter greater than a skin depth in response to the frequency of the applied alternating magnetic field.
- the thickness of the induction heating pad may be less than the skin depth.
- the induction heating pad may include copper.
- the frequency of the applied alternating magnetic field may range from about 10 kHz to about 100 kHz.
- the diameter of the induction heating pad may range from about 700 ⁇ m to about 210 ⁇ m.
- the induction heating pad may surround the bonding pad.
- the mounting substrate may further include a solder mask formed on the bonding pad to expose a portion of the bonding pad.
- the mounting substrate may further include a solder mask spaced apart from the bonding pad.
- the mounting substrate may further include an adhesion preventing pattern formed in a peripheral region of the bonding pad to prevent the solder ball from making contact with the solder mask after reflowing.
- a bonding pad and an induction heating pad adjacent to the bonding pad are formed in a substrate.
- a solder ball is arranged on the bonding pad.
- a semiconductor chip is arranged on the solder ball.
- An alternating magnetic field is applied to the induction heating pad to reflow the solder ball using heat caused by induction heating.
- reflowing the solder ball may include applying the alternating magnetic field having a frequency of from about 10 kHz to about 100 kHz to the induction heating pad.
- the method may further include forming a solder mask on the bonding pad to expose a portion of the bonding pad, after forming the bonding pad and the induction heating pad in the substrate.
- the method may further include forming a solder mask spaced apart from the bonding pad on the substrate, after forming the bonding pad and the induction heating pad in the substrate.
- the method may further include forming an adhesion preventing pattern in a peripheral region of the bonding pad to prevent the solder ball from making contact with the solder mask after reflowing.
- the method may further include forming a molding member on the substrate to protect the semiconductor chip from external impacts.
- a mounting substrate includes an induction heating pad adjacent to a bonding pad and having a diameter greater than a skin depth in response to the frequency of an applied alternating magnetic field.
- the induction heating pad is selectively induction heated in response to a low frequency band of the alternating magnetic field applied to the mounting substrate, and then heat caused by induction heating is transferred through the bonding pad to a solder, to thereby reflow a solder ball. Accordingly, during a reflow process for a solder ball, a semiconductor chip may be mounted on the mounting substrate to complete a semiconductor package without damaging the mounting substrate, to thereby improve the reliability of the completed semiconductor package.
- a mounting substrate includes a substrate, and a solder ball adhering member formed on the substrate to adhere to a solder ball to mount a semiconductor chip on the substrate, the solder ball adhering member including an induction heating region capable of being induction heated by an applied alternating magnetic field to reflow the solder ball.
- the induction heating region includes a different material than the remaining portions of the solder ball adhering member.
- FIG. 1 is a plan view illustrating a mounting substrate in accordance with an example embodiment.
- FIG. 2 is a cross-sectional view taken along a line I-I′ in FIG. 1 .
- FIG. 3 is a graph illustrating a skin depth in response to the frequency of an applied alternating magnetic field.
- FIG. 4 is a cross-sectional view illustrating a mounting substrate in accordance with another example embodiment.
- FIG. 5 is a plan view illustrating a mounting substrate in accordance with yet another example embodiment.
- FIG. 6 is a cross-sectional view illustrating a line V-V′ in FIG. 5 .
- FIG. 7 is a cross-sectional view illustrating a mounting substrate in accordance with still another example embodiment.
- FIGS. 8 to 11 are cross-sectional views illustrating a method of manufacturing a semiconductor package in accordance with some example embodiments.
- first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present general inventive concept.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
- Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized example embodiments (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region.
- a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place.
- the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present general inventive concept.
- FIG. 1 is a plan view illustrating a mounting substrate in accordance with an example embodiment.
- FIG. 2 is a cross-sectional view taken along a line I-I′ in FIG. 1 .
- a mounting substrate 100 includes a substrate 110 , a bonding pad 120 formed on the substrate 110 and an induction heating pad 130 arranged adjacent to the bonding pad 120 .
- the substrate 110 may be a printed circuit board (PCB) where a semiconductor chip (not illustrated) is mounted via a solder ball 200 .
- the substrate 110 may include a plurality of internal wirings (not illustrated) formed therein. The internal wiring may be electrically connected to the bonding pad 120 .
- a plurality of the bonding pads 120 may be formed on the substrate 110 .
- the bonding pad 120 or pads may be connected to the solder ball 200 to mount the semiconductor chip.
- the bonding pad may include a metal. Examples of metals that can be used may include gold (Au), copper (Cu), nickel (Ni), titanium (Ti), etc. These may be used alone or in a combination thereof.
- the substrate 100 may further include a solder mask 140 .
- the solder mask 140 may be formed on the bonding pad 120 of the substrate 100 .
- the solder mask 140 may cover a peripheral portion of the bonding pad 120 . Accordingly, the middle portion of the bonding pad 120 may be exposed by the solder mask 140 .
- the solder mask 140 may include an insulation material such as photo solder resist (PSR).
- the peripheral portion of the bonding pad 120 may be supported by the solder mask 140 . Therefore, the bonding pad 120 may be prevented from being lifting off due to external impacts.
- the induction heating pad 130 is formed in the substrate 110 .
- the induction heating pad 130 is arranged adjacent to the bonding pad 120 .
- the induction heating pad 130 makes contact with the bonding pad 120 to transfer heat generated from the induction heating pad 130 to the bonding pad 120 .
- the solder ball 200 on the bonding pad 120 is reflowed to adhere to the bonding pad 120 .
- an eddy current flow is caused to flow through the induction heating pad 130 by an applied alternating magnetic field so that the induction heating pad 130 is induction heated.
- the bonding pad 120 conducts heat generated in the induction heating pad 130 to the solder ball 200 so that the solder ball 200 is reflowed.
- the induction heating pad 130 may include a highly conductive material.
- the highly conductive material may include copper (Cu), aluminum (Al), iron (Fe), nickel (Ni), chromium (Cr), gold (Au), silver (Ag), platinum (Pt), etc. These may be used alone or in a combination thereof.
- the induction heating pad 130 may have a diameter (D) greater than a skin depth ( ⁇ s) in response to the frequency of the applied alternating magnetic field.
- the diameter (D) of the induction heating pad 130 may be larger than that of the bonding pad 120 .
- the thickness (H) of the induction heating pad 130 may be less than the skin depth ( ⁇ s) in response to the frequency of the applied alternating magnetic field.
- an eddy current as described above mainly flows through a surface of a material, as opposed to the inside thereof.
- This effect may be referred to as a skin effect
- the skin depth ( ⁇ s) may be an index indicating how deep the eddy current flows from the surface of a material in response to the frequency of the alternating signal.
- the skin depth ( ⁇ s) may depend on the conductivity of a material such as a metal pad and may be obtained by an Equation 1 as follows.
- ⁇ is a frequency
- ⁇ is a magnetic permeability
- ⁇ is the conductivity of a material.
- FIG. 3 is a graph illustrating a skin depth in response to the frequency of an applied alternating magnetic field.
- FIG. 3 indicates the skin depth in response to the frequency of the alternating magnetic field when the alternating magnetic field is applied to the induction heating pad 130 including copper by a winding induction coil.
- Table 1 below indicates a skin depth detected from a surface of the induction heating pad in response to the frequency of an alternating magnetic field applied to the induction heating pad.
- the induction heating pad includes copper.
- the skin depth ( ⁇ s) is decreased.
- the frequencies are respectively 10 kHz, 50 kHz, 100 kHz, 500 kHz, 1,000 kHz
- the detected skin depths ( ⁇ s) are respectively about 656 ⁇ m, 293 ⁇ m, 208 ⁇ m, 93 ⁇ m, 66 ⁇ m.
- the diameter (D) of the induction heating pad 130 required to reflow the solder ball 200 may be greater than the skin depth ( ⁇ s) in response to the applied frequency.
- the diameter (D) of the induction heating pad 130 may range from about 700 ⁇ m to about 210 ⁇ m when the frequency is in a low frequency band of less than 100 kHz.
- the minimum diameter of the induction heating pad 130 may be substantially the same as the skin depth ( ⁇ s) in response to the applied frequency. However, it will be understood that the maximum diameter of the induction heating pad 130 may be adjusted corresponding to a distance between the adjacent bonding pads.
- the current generated by the applied alternating signal mainly flows through the surface of the induction heating pad 130 . Accordingly, the thickness (H) of the induction heating pad 130 may be adjusted to be the same as or less than the skin depth ( ⁇ s) in response to the applied frequency.
- the induction heating pad 130 may be positioned under the bonding pad 120 .
- the solder mask 140 may be formed on the bonding pad 120 to expose a portion of the bonding pad 120 .
- the induction heating pad 130 having the diameter (D) greater than the skin depth ( ⁇ s) in response to the specific frequency is induction heated. Because the substrate 110 includes a nonconductor of electricity having a high specific resistance, most of heat caused by the induction heating is transferred to the solder ball 200 on the bonding pad 120 through the bonding pad 120 , to thereby reflow the solder ball 200 . Accordingly, most of heat that is selectively generated from only the induction heating pad 130 is transferred to the solder ball 200 through the bonding pad 120 , thereby preventing deformation and warping of the substrate 110 .
- FIG. 4 is a cross-sectional view illustrating a mounting substrate in accordance with another example embodiment.
- the mounting substrate this embodiment can be substantially the same as in the embodiment of FIG. 2 , except for an arrangement and shape of an induction heating pad.
- the same reference numerals will be used to refer to the same or like parts as those described in the previous embodiment, and any further repetitive explanation concerning the above elements will be omitted.
- an induction heating pad 130 ′ of a mounting substrate 101 may be arranged to surround a bonding pad 120 ′.
- the induction heating pad 130 ′ may have a ring shape along a peripheral portion of the bonding pad 120 ′. Accordingly, the induction heating pad 130 ′ may have a closed-loop shape. If the alternating magnetic field is applied in a direction perpendicular to the induction heating pad 130 ′, an eddy current flows through the closed loop of the induction heating pad 130 ′ to cause induction heating.
- an inner diameter (Din) and an outer diameter (Dout) of the ring-shaped induction heating pad 130 ′ may be determined to be greater than the skin depth ( ⁇ s) in response to the applied frequency, and the thickness (H) of the induction heating pad 130 ′ may be substantially the same as or less than the skin depth ( ⁇ s) in response to the applied frequency.
- FIG. 5 is a plan view illustrating a mounting substrate in accordance with still another example embodiment.
- FIG. 6 is a cross-sectional view illustrating a line V-V′ in FIG. 5 .
- the mounting substrate of the present embodiment can be substantially the same as in Embodiment I of FIG. 2 except for an arrangement of a solder mask.
- the same reference numerals will be used to refer to the same or like parts as those described in the embodiment of FIG. 1 , and any further repetitive explanation concerning the above elements will be omitted.
- a mounting substrate 102 includes a substrate 110 ′′, a bonding pad 120 ′′ formed on the substrate 110 ′′, an induction heating pad 130 ′′ arranged adjacent to the bonding pad 120 ′′ and a solder mask 140 ′.
- the induction heating pad 130 ′′ is formed on the substrate 110 ′′.
- the induction heating pad 130 ′′ is arranged adjacent to the bonding pad 120 ′′.
- the bonding pad is formed on the induction heating pad 130 ′′.
- the induction heating pad 130 ′′ makes contact with the bonding pad 120 to transfer heat generated from the induction heating pad 130 ′′ to the bonding pad 120 ′′.
- the solder mask 140 ′′ is formed on the substrate 110 ′′.
- the solder mask 140 ′′ is spaced apart from the bonding pad 120 ′′.
- the bonding pad 120 ′′ may not be covered by the solder mask 140 ′′.
- the bonding pad 120 ′′ is adhered to the solder ball 200 . Accordingly, an adhesion area between the bonding pad 120 ′′ and the solder ball 200 may be increased and interfacial adhesion reliability between the solder ball 200 and the bonding pad 120 ′′ may be improved.
- FIG. 7 is a cross-sectional view illustrating a mounting substrate in accordance with still another example embodiment.
- an adhesion preventing pattern 122 may be formed in a peripheral region of a bonding pad 120 ′′′.
- the adhesion preventing pattern 122 may be formed to extend upwardly from the peripheral region of the bonding pad 120 ′′′.
- the adhesion preventing pattern 122 may have a ring shape. Accordingly, the adhesion preventing pattern 122 may prevent the solder ball 200 from making contact with a solder mask 140 ′′′ after reflowing.
- FIGS. 8 to 11 are cross-sectional views illustrating a method of manufacturing a semiconductor package in accordance with some example embodiments.
- a bonding pad 120 and an induction heating pad 130 adjacent to the bonding pad 120 are formed on a substrate 110 .
- the bonding pad 120 and the induction heating pad 130 may be formed on the substrate 110 including a plurality of internal wirings (not illustrated) formed therein.
- a thermal conductive material to be induction heated by an applied alternating magnetic field is coated on the substrate 110 such as a PCB, and then is patterned to form an induction heating pad 130 .
- the induction heating pad 130 may be formed by a deposition process, a sputtering process, a plating process, a screen printing process, etc.
- the high thermal conductive material may be copper (Cu), aluminum (Al), iron (Fe), nickel (Ni), chromium (Cr), gold (Au), silver (Ag), platinum (Pt), etc. These may be used alone or in a combination thereof.
- the induction heating pad 130 may have a diameter (D) greater than a skin depth ( ⁇ s) in response to the frequency of the applied alternating magnetic field.
- the diameter (D) of the induction heating pad 130 may be larger than that of the bonding pad 120 .
- the thickness (H) of the induction heating pad 130 may be less than the skin depth ( ⁇ s) in response to the frequency of the applied alternating magnetic field.
- the diameter (D) and the thickness (H) of the induction heating pad 130 may be determined based on a frequency of the alternating magnetic field to be applied. As the frequency is increased to a high frequency, the skin depth ( ⁇ s) is decreased, and thus the diameter (D) of the induction heating pad 130 may be determined to be decreased. On the contrary, as the frequency is decreased to a low frequency, the skin depth ( ⁇ s) is increased, and thus the diameter (D) of the induction heating pad 130 may be determined to be increased.
- the skin depths ( ⁇ s) are respectively about 656 ⁇ m, 293 ⁇ m, 208 ⁇ m, 93 ⁇ m, 66 ⁇ m.
- the minimum diameter of the induction heating pad 130 may be substantially the same as the skin depth ( ⁇ s) in response to the applied frequency.
- the maximum diameter of the induction heating pad 130 may also be adjusted corresponding to a distance between the adjacent bonding pads.
- a solder mask 140 is formed on the bonding pad 120 to expose a portion of the bonding pad 120 to thereby complete the mounting substrate 100 .
- the mounting substrate 100 may include a solder mask defined (SMD) type bonding pad where the solder mask 140 covers the peripheral region of the bonding pad 120 such that the middle portion of the bonding pad 120 is exposed.
- the mounting substrate 100 may include a non-solder mask defined (NSMD) type bonding pad where the bonding pad 120 is not covered by the solder mask to be adhered to a solder ball 200 .
- SMD solder mask defined
- NSMD non-solder mask defined
- solder ball 200 is arranged on the bonding pad 120 of the mounting substrate 100 .
- a semiconductor chip 300 is arranged on the solder ball 200 .
- a liquefied paste may be coated on the bonding pad 120 , and then the solder ball 200 may be aligned to be arranged on the bonding pad 120 .
- the paste may include resin, a solder powder or the like, or a combination thereof.
- the solder ball 200 may include tin (Sn), lead (Pb), indium (In), silver (Ag), copper (Cu), etc. These may be used alone or in a combination thereof.
- solder ball 200 may be adhered to a bonding pad 310 of the semiconductor chip 300 , and then the semiconductor chip 300 may be disposed on the mounting substrate 100 to interpose the solder ball 200 between the mounting substrate 100 and the semiconductor chip 300 .
- an alternating magnetic field is applied to the induction heating pad 130 to thereby reflow the solder ball 200 using heat caused by induction heating.
- a winding induction coil 500 is arranged to apply an alternating magnetic field ⁇ right arrow over (F M ) ⁇ to the mounting substrate 100 . If an alternating current flows through the induction coil 500 , an alternating magnetic field is generated at the induction coil 500 and the alternating magnetic field is applied to the induction heating pad 130 of the mounting substrate 100 .
- the frequency of the alternating magnetic field may be in a low frequency band in consideration of avoiding dielectric heating and reducing manufacturing costs.
- the frequency of the alternating magnetic field may range from about 10 kHz to about 100 kHz.
- the induction heating pad 130 may have the diameter (D) greater than the skin depth ( ⁇ s) in response to the applied frequency.
- the thickness (H) of the induction heating pad 130 may be less than the skin depth ( ⁇ s) in response to the applied frequency.
- the solder ball 200 may not be induction heated by the applied alternating magnetic field.
- Heat generated in the induction heating pad 130 of the mounting substrate 100 is transferred through the bonding pad 120 to the solder ball 200 so that the solder ball 200 is reflowed to be adhered to the bonding pad 120 .
- Most of heat that is selectively generated in only the induction heating pad 130 is transferred to the solder ball 200 through the bonding pad 120 , thereby preventing damage to the mounting substrate 100 .
- the induction heating pad 130 of the mounting substrate 100 may be easily induction heated in response to the low frequency band, and further only the induction heating pad 130 may be selectively induction heated in the mounting substrate 100 . Therefore, a time for a reflow process may be reduced to increase productivity.
- a molding member 350 is formed on the substrate 110 to complete a semiconductor package 400 .
- the molding member 350 can protect the semiconductor chip 300 from external impacts.
- the molding member 350 may include an epoxy molding compound (EMC).
- a mounting substrate includes an induction heating pad adjacent to a bonding pad and having a diameter greater than a skin depth in response to the frequency of an applied alternating magnetic field.
- the induction heating pad is selectively induction heated in response to a low frequency band of the alternating magnetic field applied to the mounting substrate, and then heat caused by the induction heating is transferred through the bonding pad to a solder ball, to thereby reflow the solder ball. Accordingly, during a reflow process for a solder ball, a semiconductor chip may be mounted on the mounting substrate to complete a semiconductor package without damaging the mounting substrate, to thereby improve the reliability of the completed semiconductor package.
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Abstract
Description
- This application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 2008-7345, filed on Jan. 24, 2008 in the Korean Intellectual Property Office (KIPO), the contents of which are herein incorporated by reference in their entirety.
- 1. Field of the Invention
- Example embodiments relate to a mounting substrate and a method of manufacturing a semiconductor package using the same. More particularly, example embodiments relate to a mounting substrate to mount a semiconductor chip by applying an alternating magnetic field, and a method of manufacturing a semiconductor package having a semiconductor chip mounted on the mounting substrate.
- 2. Description of the Related Art
- As the degrees of integration of semiconductor chips are increasing, a larger number of input/output (I/O) pins are required therein, and thus a ball grid array (BGA) package, which is a type of semiconductor package corresponding thereto, has been developed.
- The BGA package using surface-mount technology (SMT) has been developed to have an increased number of I/O pins to increase a mounting density. That is, in the BGA package, an electrical signal is inputted and outputted between the semiconductor chip and an external printed circuit board (PCB) through a solder ball that is adhered to a surface of the semiconductor package, to thereby increase the number of the I/O pins capable of being accommodated in the semiconductor package.
- Conventionally, after the solder ball is arranged on a bonding pad of a mounting substrate such as the PCB, and the semiconductor chip is aligned on the solder ball, the semiconductor chip is mounted on the mounting substrate by a reflow process or an infrared reflow process.
- However, in the conventional reflow process, both the semiconductor chip and the mounting substrate with the solder ball are heated to a temperature higher than the melting point of the solder ball. Accordingly, a stress concentrates in the solder ball due to a difference of the thermal expansion coefficient between the mounting substrate and the semiconductor chip, to deteriorate the reliability of a product during an inspection process such as a temperature cycling (TC) test, a drop test, a bending test, etc. Further, the mounting substrate may be warped by heat in the reflow process, to cause an adhesion failure of the solder ball.
- Example embodiments provide a mounting substrate to mount a semiconductor chip and capable of preventing deterioration of reliability due to thermal deformation.
- Example embodiments also provide a method of manufacturing a semiconductor package including a semiconductor chip mounted on the mounting substrate.
- Additional aspects and utilities of the present general inventive concept will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the general inventive concept.
- According to some example embodiments, a mounting substrate includes a substrate, a bonding pad and an induction heating pad. The bonding pad is formed on the substrate, and adhered to a solder ball to mount a semiconductor chip on the substrate. The induction heating pad is disposed adjacent to the bonding pad, the induction heating pad being induction heated by an applied alternating magnetic field to reflow the solder ball.
- In an example embodiment, the induction heating pad may include a diameter greater than a skin depth in response to the frequency of the applied alternating magnetic field. The thickness of the induction heating pad may be less than the skin depth.
- In an example embodiment, the induction heating pad may include copper.
- In an example embodiment, the frequency of the applied alternating magnetic field may range from about 10 kHz to about 100 kHz. The diameter of the induction heating pad may range from about 700 μm to about 210 μm.
- In another example embodiment, the induction heating pad may surround the bonding pad.
- In still another example embodiment, the mounting substrate may further include a solder mask formed on the bonding pad to expose a portion of the bonding pad.
- In still yet another example embodiment, the mounting substrate may further include a solder mask spaced apart from the bonding pad. The mounting substrate may further include an adhesion preventing pattern formed in a peripheral region of the bonding pad to prevent the solder ball from making contact with the solder mask after reflowing.
- According to some example embodiments, in a method of manufacturing a semiconductor package, a bonding pad and an induction heating pad adjacent to the bonding pad are formed in a substrate. A solder ball is arranged on the bonding pad. A semiconductor chip is arranged on the solder ball. An alternating magnetic field is applied to the induction heating pad to reflow the solder ball using heat caused by induction heating.
- In an example embodiment, reflowing the solder ball may include applying the alternating magnetic field having a frequency of from about 10 kHz to about 100 kHz to the induction heating pad.
- In an example embodiment, the method may further include forming a solder mask on the bonding pad to expose a portion of the bonding pad, after forming the bonding pad and the induction heating pad in the substrate.
- In another example embodiment, the method may further include forming a solder mask spaced apart from the bonding pad on the substrate, after forming the bonding pad and the induction heating pad in the substrate. The method may further include forming an adhesion preventing pattern in a peripheral region of the bonding pad to prevent the solder ball from making contact with the solder mask after reflowing.
- In an example embodiment, the method may further include forming a molding member on the substrate to protect the semiconductor chip from external impacts.
- According to some example embodiments, a mounting substrate includes an induction heating pad adjacent to a bonding pad and having a diameter greater than a skin depth in response to the frequency of an applied alternating magnetic field.
- The induction heating pad is selectively induction heated in response to a low frequency band of the alternating magnetic field applied to the mounting substrate, and then heat caused by induction heating is transferred through the bonding pad to a solder, to thereby reflow a solder ball. Accordingly, during a reflow process for a solder ball, a semiconductor chip may be mounted on the mounting substrate to complete a semiconductor package without damaging the mounting substrate, to thereby improve the reliability of the completed semiconductor package.
- According to some example embodiments, a mounting substrate includes a substrate, and a solder ball adhering member formed on the substrate to adhere to a solder ball to mount a semiconductor chip on the substrate, the solder ball adhering member including an induction heating region capable of being induction heated by an applied alternating magnetic field to reflow the solder ball.
- In some embodiments, the induction heating region includes a different material than the remaining portions of the solder ball adhering member.
- These and/or other aspects and utilities of the present general inventive concept will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which.
-
FIG. 1 is a plan view illustrating a mounting substrate in accordance with an example embodiment. -
FIG. 2 is a cross-sectional view taken along a line I-I′ inFIG. 1 . -
FIG. 3 is a graph illustrating a skin depth in response to the frequency of an applied alternating magnetic field. -
FIG. 4 is a cross-sectional view illustrating a mounting substrate in accordance with another example embodiment. -
FIG. 5 is a plan view illustrating a mounting substrate in accordance with yet another example embodiment. -
FIG. 6 is a cross-sectional view illustrating a line V-V′ inFIG. 5 . -
FIG. 7 is a cross-sectional view illustrating a mounting substrate in accordance with still another example embodiment. -
FIGS. 8 to 11 are cross-sectional views illustrating a method of manufacturing a semiconductor package in accordance with some example embodiments. - Reference will now be made in detail to the embodiments of the present general inventive concept, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. The embodiments are described below in order to explain the present general inventive concept by referring to the figures.
- It will be understood that when an element or layer is referred to as being “on,” “connected to” or “coupled to” another element or layer, it can be directly on, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present. Like numerals refer to like elements throughout. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
- It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present general inventive concept.
- Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
- The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
- Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized example embodiments (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present general inventive concept.
- Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
-
FIG. 1 is a plan view illustrating a mounting substrate in accordance with an example embodiment.FIG. 2 is a cross-sectional view taken along a line I-I′ inFIG. 1 . - Referring to
FIGS. 1 and 2 , a mountingsubstrate 100 according to the present example embodiment includes asubstrate 110, abonding pad 120 formed on thesubstrate 110 and aninduction heating pad 130 arranged adjacent to thebonding pad 120. - For example, the
substrate 110 may be a printed circuit board (PCB) where a semiconductor chip (not illustrated) is mounted via asolder ball 200. Thesubstrate 110 may include a plurality of internal wirings (not illustrated) formed therein. The internal wiring may be electrically connected to thebonding pad 120. - A plurality of the
bonding pads 120 may be formed on thesubstrate 110. Thebonding pad 120 or pads may be connected to thesolder ball 200 to mount the semiconductor chip. For example, the bonding pad may include a metal. Examples of metals that can be used may include gold (Au), copper (Cu), nickel (Ni), titanium (Ti), etc. These may be used alone or in a combination thereof. - In an example embodiment, the
substrate 100 may further include asolder mask 140. Thesolder mask 140 may be formed on thebonding pad 120 of thesubstrate 100. Thesolder mask 140 may cover a peripheral portion of thebonding pad 120. Accordingly, the middle portion of thebonding pad 120 may be exposed by thesolder mask 140. For example, thesolder mask 140 may include an insulation material such as photo solder resist (PSR). - Accordingly, the peripheral portion of the
bonding pad 120 may be supported by thesolder mask 140. Therefore, thebonding pad 120 may be prevented from being lifting off due to external impacts. - The
induction heating pad 130 is formed in thesubstrate 110. Theinduction heating pad 130 is arranged adjacent to thebonding pad 120. Theinduction heating pad 130 makes contact with thebonding pad 120 to transfer heat generated from theinduction heating pad 130 to thebonding pad 120. - In order to mount the semiconductor chip on the mounting
substrate 100, thesolder ball 200 on thebonding pad 120 is reflowed to adhere to thebonding pad 120. In this case, an eddy current flow is caused to flow through theinduction heating pad 130 by an applied alternating magnetic field so that theinduction heating pad 130 is induction heated. Thebonding pad 120 conducts heat generated in theinduction heating pad 130 to thesolder ball 200 so that thesolder ball 200 is reflowed. - For example, the
induction heating pad 130 may include a highly conductive material. Examples of the highly conductive material may include copper (Cu), aluminum (Al), iron (Fe), nickel (Ni), chromium (Cr), gold (Au), silver (Ag), platinum (Pt), etc. These may be used alone or in a combination thereof. - In some example embodiments, the
induction heating pad 130 may have a diameter (D) greater than a skin depth (δs) in response to the frequency of the applied alternating magnetic field. The diameter (D) of theinduction heating pad 130 may be larger than that of thebonding pad 120. The thickness (H) of theinduction heating pad 130 may be less than the skin depth (δs) in response to the frequency of the applied alternating magnetic field. - As the frequency of an applied alternating signal is increased to be a high frequency, an eddy current as described above mainly flows through a surface of a material, as opposed to the inside thereof. This effect may be referred to as a skin effect, and the skin depth (δs) may be an index indicating how deep the eddy current flows from the surface of a material in response to the frequency of the alternating signal. The skin depth (δs) may depend on the conductivity of a material such as a metal pad and may be obtained by an Equation 1 as follows.
-
- Here, ω is a frequency, μ is a magnetic permeability and γ is the conductivity of a material.
-
FIG. 3 is a graph illustrating a skin depth in response to the frequency of an applied alternating magnetic field. In this case,FIG. 3 indicates the skin depth in response to the frequency of the alternating magnetic field when the alternating magnetic field is applied to theinduction heating pad 130 including copper by a winding induction coil. - Table 1 below indicates a skin depth detected from a surface of the induction heating pad in response to the frequency of an alternating magnetic field applied to the induction heating pad. In Table 1, the induction heating pad includes copper.
-
TABLE 1 Frequency (Hz) Skin Depth (μm) 10,000 656 50,000 293 100,000 208 500,000 93 1,000,000 66 5,000,000 29 10,000,000 20 - Referring to
FIG. 3 and Table 1, as the frequency of the applied alternating signal is increased to be a high frequency, the skin depth (δs) is decreased. As illustrated inFIG. 3 and Table 1, when the frequencies are respectively 10 kHz, 50 kHz, 100 kHz, 500 kHz, 1,000 kHz, the detected skin depths (δs) are respectively about 656 μm, 293 μm, 208 μm, 93 μm, 66 μm. - In some example embodiments, the diameter (D) of the
induction heating pad 130 required to reflow thesolder ball 200 may be greater than the skin depth (δs) in response to the applied frequency. For example, the diameter (D) of theinduction heating pad 130 may range from about 700 μm to about 210 μm when the frequency is in a low frequency band of less than 100 kHz. - The minimum diameter of the
induction heating pad 130 may be substantially the same as the skin depth (δs) in response to the applied frequency. However, it will be understood that the maximum diameter of theinduction heating pad 130 may be adjusted corresponding to a distance between the adjacent bonding pads. - The current generated by the applied alternating signal mainly flows through the surface of the
induction heating pad 130. Accordingly, the thickness (H) of theinduction heating pad 130 may be adjusted to be the same as or less than the skin depth (δs) in response to the applied frequency. - In an example embodiment, the
induction heating pad 130 may be positioned under thebonding pad 120. Thesolder mask 140 may be formed on thebonding pad 120 to expose a portion of thebonding pad 120. - If the alternating magnetic field having a specific frequency is applied to the mounting
substrate 100, theinduction heating pad 130 having the diameter (D) greater than the skin depth (δs) in response to the specific frequency is induction heated. Because thesubstrate 110 includes a nonconductor of electricity having a high specific resistance, most of heat caused by the induction heating is transferred to thesolder ball 200 on thebonding pad 120 through thebonding pad 120, to thereby reflow thesolder ball 200. Accordingly, most of heat that is selectively generated from only theinduction heating pad 130 is transferred to thesolder ball 200 through thebonding pad 120, thereby preventing deformation and warping of thesubstrate 110. -
FIG. 4 is a cross-sectional view illustrating a mounting substrate in accordance with another example embodiment. The mounting substrate this embodiment can be substantially the same as in the embodiment ofFIG. 2 , except for an arrangement and shape of an induction heating pad. Thus, the same reference numerals will be used to refer to the same or like parts as those described in the previous embodiment, and any further repetitive explanation concerning the above elements will be omitted. - In the example embodiment of
FIG. 4 , aninduction heating pad 130′ of a mountingsubstrate 101 may be arranged to surround abonding pad 120′. For example, theinduction heating pad 130′ may have a ring shape along a peripheral portion of thebonding pad 120′. Accordingly, theinduction heating pad 130′ may have a closed-loop shape. If the alternating magnetic field is applied in a direction perpendicular to theinduction heating pad 130′, an eddy current flows through the closed loop of theinduction heating pad 130′ to cause induction heating. - In this case, an inner diameter (Din) and an outer diameter (Dout) of the ring-shaped
induction heating pad 130′ may be determined to be greater than the skin depth (δs) in response to the applied frequency, and the thickness (H) of theinduction heating pad 130′ may be substantially the same as or less than the skin depth (δs) in response to the applied frequency. -
FIG. 5 is a plan view illustrating a mounting substrate in accordance with still another example embodiment.FIG. 6 is a cross-sectional view illustrating a line V-V′ inFIG. 5 . The mounting substrate of the present embodiment can be substantially the same as in Embodiment I ofFIG. 2 except for an arrangement of a solder mask. Thus, the same reference numerals will be used to refer to the same or like parts as those described in the embodiment ofFIG. 1 , and any further repetitive explanation concerning the above elements will be omitted. - Referring to
FIGS. 5 and 6 , a mountingsubstrate 102 according to this example embodiment includes asubstrate 110″, abonding pad 120″ formed on thesubstrate 110″, aninduction heating pad 130″ arranged adjacent to thebonding pad 120″ and asolder mask 140′. - The
induction heating pad 130″ is formed on thesubstrate 110″. Theinduction heating pad 130″ is arranged adjacent to thebonding pad 120″. The bonding pad is formed on theinduction heating pad 130″. Theinduction heating pad 130″ makes contact with thebonding pad 120 to transfer heat generated from theinduction heating pad 130″ to thebonding pad 120″. - The
solder mask 140″ is formed on thesubstrate 110″. Thesolder mask 140″ is spaced apart from thebonding pad 120″. Thebonding pad 120″ may not be covered by thesolder mask 140″. Thebonding pad 120″ is adhered to thesolder ball 200. Accordingly, an adhesion area between thebonding pad 120″ and thesolder ball 200 may be increased and interfacial adhesion reliability between thesolder ball 200 and thebonding pad 120″ may be improved. -
FIG. 7 is a cross-sectional view illustrating a mounting substrate in accordance with still another example embodiment. - In this example embodiment, as illustrated in
FIG. 7 , anadhesion preventing pattern 122 may be formed in a peripheral region of abonding pad 120′″. Theadhesion preventing pattern 122 may be formed to extend upwardly from the peripheral region of thebonding pad 120′″. For example, theadhesion preventing pattern 122 may have a ring shape. Accordingly, theadhesion preventing pattern 122 may prevent thesolder ball 200 from making contact with asolder mask 140′″ after reflowing. - Hereinafter, a method of manufacturing a semiconductor package including a semiconductor chip mounted on the mounting substrate in
FIG. 1 will be described. -
FIGS. 8 to 11 are cross-sectional views illustrating a method of manufacturing a semiconductor package in accordance with some example embodiments. - Referring to
FIG. 8 , abonding pad 120 and aninduction heating pad 130 adjacent to thebonding pad 120 are formed on asubstrate 110. Thebonding pad 120 and theinduction heating pad 130 may be formed on thesubstrate 110 including a plurality of internal wirings (not illustrated) formed therein. - In an example embodiment, first, a thermal conductive material to be induction heated by an applied alternating magnetic field is coated on the
substrate 110 such as a PCB, and then is patterned to form aninduction heating pad 130. - For example, the
induction heating pad 130 may be formed by a deposition process, a sputtering process, a plating process, a screen printing process, etc. Examples of the high thermal conductive material may be copper (Cu), aluminum (Al), iron (Fe), nickel (Ni), chromium (Cr), gold (Au), silver (Ag), platinum (Pt), etc. These may be used alone or in a combination thereof. - In some example embodiments, the
induction heating pad 130 may have a diameter (D) greater than a skin depth (δs) in response to the frequency of the applied alternating magnetic field. The diameter (D) of theinduction heating pad 130 may be larger than that of thebonding pad 120. The thickness (H) of theinduction heating pad 130 may be less than the skin depth (δs) in response to the frequency of the applied alternating magnetic field. - The diameter (D) and the thickness (H) of the
induction heating pad 130 may be determined based on a frequency of the alternating magnetic field to be applied. As the frequency is increased to a high frequency, the skin depth (δs) is decreased, and thus the diameter (D) of theinduction heating pad 130 may be determined to be decreased. On the contrary, as the frequency is decreased to a low frequency, the skin depth (δs) is increased, and thus the diameter (D) of theinduction heating pad 130 may be determined to be increased. - For example, when the alternating magnetic field is applied to the
induction heating pad 130 including copper by a winding induction coil and the frequencies are respectively 10 kHz, 50 kHz, 100 kHz, 500 kHz, 1,000 kHz, the skin depths (δs) are respectively about 656 μm, 293 μm, 208 μm, 93 μm, 66 μm. Accordingly, the minimum diameter of theinduction heating pad 130 may be substantially the same as the skin depth (δs) in response to the applied frequency. However, it will be understood that the maximum diameter of theinduction heating pad 130 may also be adjusted corresponding to a distance between the adjacent bonding pads. - Then, after a
bonding pad 120 is formed on theinduction heating pad 130 to be connected to the internal wiring of thesubstrate 110, asolder mask 140 is formed on thebonding pad 120 to expose a portion of thebonding pad 120 to thereby complete the mountingsubstrate 100. - For example, the mounting
substrate 100 may include a solder mask defined (SMD) type bonding pad where thesolder mask 140 covers the peripheral region of thebonding pad 120 such that the middle portion of thebonding pad 120 is exposed. Alternatively, the mountingsubstrate 100 may include a non-solder mask defined (NSMD) type bonding pad where thebonding pad 120 is not covered by the solder mask to be adhered to asolder ball 200. - Referring to
FIG. 9 , after thesolder ball 200 is arranged on thebonding pad 120 of the mountingsubstrate 100, asemiconductor chip 300 is arranged on thesolder ball 200. - In an example embodiment, a liquefied paste may be coated on the
bonding pad 120, and then thesolder ball 200 may be aligned to be arranged on thebonding pad 120. For example, the paste may include resin, a solder powder or the like, or a combination thereof. Thesolder ball 200 may include tin (Sn), lead (Pb), indium (In), silver (Ag), copper (Cu), etc. These may be used alone or in a combination thereof. - In another example embodiment, the
solder ball 200 may be adhered to abonding pad 310 of thesemiconductor chip 300, and then thesemiconductor chip 300 may be disposed on the mountingsubstrate 100 to interpose thesolder ball 200 between the mountingsubstrate 100 and thesemiconductor chip 300. - Referring to
FIG. 10 , an alternating magnetic field is applied to theinduction heating pad 130 to thereby reflow thesolder ball 200 using heat caused by induction heating. - In an example embodiment, a winding
induction coil 500 is arranged to apply an alternating magnetic field {right arrow over (FM)} to the mountingsubstrate 100. If an alternating current flows through theinduction coil 500, an alternating magnetic field is generated at theinduction coil 500 and the alternating magnetic field is applied to theinduction heating pad 130 of the mountingsubstrate 100. - For example, the frequency of the alternating magnetic field may be in a low frequency band in consideration of avoiding dielectric heating and reducing manufacturing costs. In an example embodiment, the frequency of the alternating magnetic field may range from about 10 kHz to about 100 kHz.
- In some example embodiments, the
induction heating pad 130 may have the diameter (D) greater than the skin depth (δs) in response to the applied frequency. The thickness (H) of theinduction heating pad 130 may be less than the skin depth (δs) in response to the applied frequency. - By an induced electromotive force caused by the applied alternating magnetic field, an eddy current flows through the
induction heating pad 130 to generate joule heat therein. On the other hand, because the diameter of the solder ball is much less than the minimum diameter needed to be induction heated in response to the specific frequency of the applied alternating magnetic field, thesolder ball 200 may not be induction heated by the applied alternating magnetic field. - Heat generated in the
induction heating pad 130 of the mountingsubstrate 100 is transferred through thebonding pad 120 to thesolder ball 200 so that thesolder ball 200 is reflowed to be adhered to thebonding pad 120. Most of heat that is selectively generated in only theinduction heating pad 130 is transferred to thesolder ball 200 through thebonding pad 120, thereby preventing damage to the mountingsubstrate 100. - The
induction heating pad 130 of the mountingsubstrate 100 may be easily induction heated in response to the low frequency band, and further only theinduction heating pad 130 may be selectively induction heated in the mountingsubstrate 100. Therefore, a time for a reflow process may be reduced to increase productivity. - Referring to
FIG. 11 , amolding member 350 is formed on thesubstrate 110 to complete asemiconductor package 400. Themolding member 350 can protect thesemiconductor chip 300 from external impacts. For example, themolding member 350 may include an epoxy molding compound (EMC). - As mentioned above, according to some example embodiments, a mounting substrate includes an induction heating pad adjacent to a bonding pad and having a diameter greater than a skin depth in response to the frequency of an applied alternating magnetic field.
- The induction heating pad is selectively induction heated in response to a low frequency band of the alternating magnetic field applied to the mounting substrate, and then heat caused by the induction heating is transferred through the bonding pad to a solder ball, to thereby reflow the solder ball. Accordingly, during a reflow process for a solder ball, a semiconductor chip may be mounted on the mounting substrate to complete a semiconductor package without damaging the mounting substrate, to thereby improve the reliability of the completed semiconductor package.
- Although a few embodiments of the present general inventive concept have been shown and described, it will be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the general inventive concept, the scope of which is defined in the appended claims and their equivalents
Claims (17)
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KR2008-007345 | 2008-01-24 | ||
KR1020080007345A KR20090081472A (en) | 2008-01-24 | 2008-01-24 | Mounting substrate and method of manufacturing a semiconductor package using the same |
KR10-2008-0007345 | 2008-01-24 |
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US20090188704A1 true US20090188704A1 (en) | 2009-07-30 |
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US20110088929A1 (en) * | 2009-10-16 | 2011-04-21 | Princo Corp. | Metal structure of flexible multi-layer substrate and manufacturing method thereof |
CN102625595A (en) * | 2011-01-31 | 2012-08-01 | 博大科技股份有限公司 | Method for using high frequency induction heating technology to weld electronic component |
US20130214401A1 (en) * | 2012-02-17 | 2013-08-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and Method for Fine Pitch PoP Structure |
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US9177931B2 (en) | 2014-02-27 | 2015-11-03 | Globalfoundries U.S. 2 Llc | Reducing thermal energy transfer during chip-join processing |
US9190375B2 (en) * | 2014-04-09 | 2015-11-17 | GlobalFoundries, Inc. | Solder bump reflow by induction heating |
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US20220367255A1 (en) * | 2019-08-16 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding method of package components and bonding apparatus |
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US8254140B2 (en) | 2012-08-28 |
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