US20090186467A1 - Substrate Processing Apparatus and Producing Method of Semiconductor Device - Google Patents
Substrate Processing Apparatus and Producing Method of Semiconductor Device Download PDFInfo
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- US20090186467A1 US20090186467A1 US12/414,128 US41412809A US2009186467A1 US 20090186467 A1 US20090186467 A1 US 20090186467A1 US 41412809 A US41412809 A US 41412809A US 2009186467 A1 US2009186467 A1 US 2009186467A1
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- gas
- processing chamber
- tma
- gas supply
- substrates
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- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 114
- 238000000354 decomposition reaction Methods 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052593 corundum Inorganic materials 0.000 abstract description 17
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 17
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 abstract description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 34
- 238000000231 atomic layer deposition Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000011261 inert gas Substances 0.000 description 10
- 230000033001 locomotion Effects 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000012384 transportation and delivery Methods 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910020323 ClF3 Inorganic materials 0.000 description 1
- 229910007245 Si2Cl6 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31616—Deposition of Al2O3
- H01L21/3162—Deposition of Al2O3 on a silicon body
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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Abstract
A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tubeto generate Al2O3 film on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA and a nozzle supplying gas into the reaction tube. The two supply tubes are connected to the nozzle disposed inside the heater in a zone inside the reaction tube where a temperature is lower than a temperature near the wafer, and the ozone and TMA are supplied into the reaction tube through the nozzle.
Description
- This application is a Divisional of co-pending application Ser. No. 10/549,698 filed on Sep. 19, 2005 and for which priority is claimed under 35 U.S.C. § 120. Application Ser. No. 10/549,698 is the national phase of PCT International Application No. PCT/JP2004/009820 filed on Jul. 9, 2004 under 35 U.S.C. § 371, which claims priority to JP2003-293953, filed on Aug. 15, 2003. The entire contents of each of the above-identified applications are hereby incorporated by reference.
- The present invention relates to a substrate processing apparatus and a producing method of a semiconductor device, and more particularly, to a semiconductor producing apparatus which forms a film by ALD (Atomic layer Deposition) method used when an Si semiconductor device is produced, and to a producing method of a semiconductor device by the ALD method.
- A film forming processing using the ALD method which is one of CVD (Chemical Vapor Deposition) methods will be explained briefly.
- The ALD method is a method in which two (or more) kinds of raw material gases used for forming a film are alternately supplied onto a substrate by one kind by one kind under certain film forming conditions (temperature, time and the like), the gases are allowed to be adsorbed by one atomic layer by one atomic layer, and a film is formed utilizing a surface reaction.
- That is, when an Al2O3 (aluminum oxide) film is to be produced for example, a high quality film can be formed at a low temperature as low as 250 to 450° C. by alternately supplying TMA (Al(CH3)3, trimethyl aluminum) and O3(ozone) using the ALD method. In the ALD method, a film is formed by supplying a plurality of reaction gases alternately one kind by one kind in this manner. The thickness of the film is controlled by the number of cycles of the supply of the reaction gases. For example, when film forming speed is 1 Å/cycle, in order to form a film of 20Å, 20 cycles of the film forming processing are carried out.
- A conventional ALD apparatus which forms the Al2O3 film is called a single wafer type apparatus in which the number of substrates to be processed in one processing furnace at a time is one to five, and an apparatus called a batch type apparatus in which 25 or more substrates are arranged in parallel to an axial direction of a reaction tube has not yet become commercially practical.
- When an Al2O3 film is formed by such a vertical batch type apparatus using TMA and O3, if a TMA nozzle and an O3 nozzle separately disposed vertically in the reaction furnace, there is an adverse possibility that TMA is decompose in the TMA gas nozzle and Al (aluminum) film is formed, and if the film becomes thick, it is peeled off and becomes a foreign matter generating source.
- It is a main object of the present invention to provide a substrate processing apparatus and a producing method of a semiconductor device capable of suppressing the generation of foreign matter caused by peel by preventing a film from being produced in a nozzle.
- According to one aspect of the present invention, there is provided a substrate processing apparatus having a processing chamber which accommodates a substrate or substrates therein, and a heating member which heats said substrate or substrates, in which at least two gases which react with each other are alternately supplied into said processing chamber to form a desired film or films on a surface or surfaces of said substrate or substrates, characterized by comprising:
- two supply tubes through which said two gases respectively flow independently from each other; and
- a single gas supply member which supplies said gases into said processing chamber and which has a portion extending to a region whose temperature is equal to or higher than a decomposition temperature of at least one of said two gases, wherein
- said two supply tubes are connected to said gas supply member at a location whose temperature is lower than the decomposition temperature of said at least one gas, and said two gases are supplied into said processing chamber through said gas supply member.
- According to another aspect of the present invention, there is provided a substrate processing apparatus comprising a hot wall type processing furnace which includes a processing chamber which accommodates a substrate or substrates therein and a heating member which is disposed outside of said processing chamber and which heats said substrate or substrates, wherein at least two gases which react with each other are alternately supplied into said processing chamber to produce a desired film or films on a surface or surfaces of said substrate or substrates, characterized by comprising:
- two supply tubes through which said two gases respectively flow independently from each other; and
- a single gas supply member which supplies said gases into said processing chamber, and which has a portion disposed inside of said heating member, wherein said two supply tubes are connected to said gas supply member in a region whose temperature is lower than a temperature in said processing chamber in the vicinity of said substrate or substrates, and said two gases are supplied into said processing chamber through said gas supply member.
- According to still another preferable aspect of the present invention, there is provided a semiconductor device producing method characterized in that
- using a substrate processing apparatus having a processing chamber which accommodates a substrate or substrates therein, and a heating member which heats said substrate or substrates, in which at least two gases which react with each other are alternately supplied into said processing chamber to form a desired film or films on a surface or surfaces of said substrate or substrates, comprising:
- two supply tubes through which said two gases respectively flow independently from each other; and
- a single gas supply member which supplies said gases into said processing chamber and which has a portion extending to a region whose temperature is equal to or higher than a decomposition temperature of at least one of said two gases, wherein
- said two supply tubes are connected to said gas supply member at a location whose temperature is lower than the decomposition temperature of said at least one gas, and said two gases are supplied into said processing chamber through said gas supply member,
- said two gases are alternately supplied into said processing chamber through said gas supply member to form said desired film or films on said surface or surfaces of said substrate or substrates.
-
FIG. 1 is a schematic longitudinal sectional view of a vertical substrate processing furnace of a substrate processing apparatus according to one embodiment of the present invention. -
FIG. 2 is a schematic transversal sectional view of the vertical substrate processing furnace of the substrate processing apparatus according to the one embodiment of the present invention. -
FIG. 3A is a schematic diagram for explaining anozzle 233 of the vertical substrate processing furnace of the substrate processing apparatus according to the one embodiment of the present invention. -
FIG. 3B is a partial enlarged diagram of a portion A inFIG. 3A . -
FIG. 4 is a schematic perspective view for explaining the substrate processing apparatus according to the one embodiment of the present invention. - In a batch type processing apparatus according to a preferred embodiment of the present invention, trimethyl aluminum (chemical formula: Al(CH3)3, TMA) and ozone (O3) are used as raw materials, the processing apparatus includes a substrate holding jig capable of holding a plurality of substrates, a reaction tube in which the substrate holding jig is inserted and which processes the substrates, heating means which heats the substrates, an evacuator capable of exhausting gas in the reaction tube, and one gas nozzle from which gas is issued toward the substrates in parallel to surfaces thereof, TMA and 03 gas supply lines connected to the nozzle are merge with each other in a reaction chamber, TMA and O3 are alternately supplied onto the substrates, thereby forming aluminum oxide films (Al2O3 films). Here, TMA is adsorbed on the substrate, O3 gas which flows next reacts with the adsorbed TMA, and Al2O3 film of one atomic layer is produced.
- If the pressure and the temperature of TMA are increased, self decomposition of TMA is prone to take place, and Al film is produced. The gas nozzle is provided with a nozzle hole from which gas is issued. Since the nozzle hole is small, the pressure in the nozzle becomes higher than the pressure in the furnace. When the pressure in the furnace is 0.5 Torr (about 67 Pa), it is expected that the pressure in the nozzle becomes 10 Torr (about 1330 Pa). Therefore, especially in a nozzle located in a high temperature region, the self decomposition of TMA is prone to take place. On the other hand, although the temperature in the furnace is high, the pressure in the furnace does not become as high as that in the nozzle and thus, the self decomposition of TMA is less prone to take place. Therefore, a problem of generation of Al film in the nozzle becomes serious.
- To remove Al2O3 film adhered to an inner wall of the reaction tube, ClF3 gas is allowed to flow to carry out cleaning. If this cleaning gas is supplied from the nozzle, Al2O3 film in the nozzle can also be removed at the same time, and the cleaning operation is facilitated and efficiency thereof is also be enhanced.
- The present invention is suitably applied not only to a forming operation of Al2O3 films but also to a forming operation of HfO2 films. This is because that Hf raw material causes the same problem as that of TMA. In this case, In this case, O3 gas and Hf raw material gas of vaporized tetrakis (N-ethyl-N-methyl amino) hafnium (liquid at normal temperature) are allowed to flow alternately to form HfO2 film.
- The present invention is also suitably applied to a forming operation of SiO2 films using the following materials:
- (1) a case in which O3 and Si2Cl6 (hexachloro disilane) are allowed to flow alternately to form SiO2 films by the ALD method;
(2) a case in which O3 and HSi (OC2H5)3(TRIES) are allowed to flow alternately to form SiO2 films by the ALD method; and
(3) a case in which O3 and HSi [N(CH3)2]3(TrisDMAS) are allowed to flow alternately to form SiO2 films by the ALD method. -
FIG. 1 is a schematic diagram showing a structure of a vertical substrate processing furnace according to an embodiment, and is a vertical sectional view of a processing furnace portion, andFIG. 2 is a schematic diagram showing a structure of the vertical substrate processing furnace, and is a transverse sectional view of the processing furnace portion.FIG. 3A is a schematic diagram used for explaining anozzle 233 of the vertical substrate processing furnace of a semiconductor producing apparatus of the embodiment, andFIG. 3B is a partial enlarged diagram of a portion A inFIG. 3A . - A
reaction tube 203 as a reaction container is provided inside of aheater 207 which is heating means. Thereaction tube 203processes wafers 200 which are substrates. A manifold 209 made of stainless steel for example is engaged with a lower end of thereaction tube 203. A lower end opening of the manifold 209 is air-tightly closed with aseal cap 219 which is a lid through an O-ring 220 which is a hermetic member. At least theheater 207, thereaction tube 203, the manifold 209 and theseal cap 219 form aprocessing furnace 202. The manifold 209 is fixed to holding means (heater base 251, hereinafter). - A lower end of the
reaction tube 203 and an upper opening end of the manifold 209 are provided with annular flanges, respectively. A hermetic member (O-ring 220, hereinafter) is disposed between the flanges to air-tightly seal between them. - A
boat 217 which is substrate holding means is vertically provided above theseal cap 219 through aquartz cap 218. Thequartz cap 218 is a holding body which holds theboat 217. Theboat 217 is inserted into aprocessing furnace 202. The plurality ofwafers 200 to be batch-processed are multi-stacked on theboat 217 in their horizontal attitudes in an axial direction of theboat 217. Theheater 207 heats thewafers 200 inserted into theprocessing furnace 202 to a predetermined temperature. - The
processing furnace 202 is provided with twogas supply tubes processing furnace 202. Thegas supply tubes gas supply tube 232 a in theprocessing furnace 202, and the twogas supply tubes porous nozzle 233. Thenozzle 233 is provided in theprocessing furnace 202, and its upper portion extends to a region whose temperature is equal to or higher than the decomposition temperature of TMA supplied from thegas supply tube 232 b. However, a location where thegas supply tube 232 b merges with thegas supply tube 232 a in theprocessing furnace 202 is a region whose temperature is lower than the decomposition temperature of TMA, and the temperature of this region is lower than a temperature of thewafers 200 and a temperature in the vicinity of thewafers 200. Here, reaction gas (O3) is supplied from the firstgas supply tube 232 a into theprocessing furnace 202 through a firstmass flow controller 241 a which is flow rate control means, a first valve 243 a which is an open/close valve, and a later-describedporous nozzle 233 disposed in theprocessing furnace 202. Reaction gas (TMA) is supplied from the secondgas supply tubes 232 b into theprocessing furnace 202 through a secondmass flow controller 241 b which is flow rate control means, asecond valve 252 which is an open/close valve, aTMA container 260, athird valve 250 which is an open/close valve, and theporous nozzle 233. Aheater 300 is provided in thegas supply tube 232 b at a location between theTMA container 260 and the manifold 209, and the temperature of thegas supply tube 232 b is maintained at 50 to 60° C. - An
inert gas line 232 c is connected to thegas supply tube 232 b downstream of thethird valve 250 through an open/close valve 253. Aninert gas line 232 d is connected to thegas supply tube 232 a downstream of the first valve 243 a through an open/close valve 254. - The
processing furnace 202 is connected to avacuum pump 246 which is exhausting means through afourth valve 243 d by agas exhausting tube 231 which is an exhausting tube for exhausting gas so as to evacuate theprocessing furnace 202. Thefourth valve 243 d is the open/close valve which can open and close the valve to evacuate theprocessing furnace 202 and to stop the evacuation, and can adjust the pressure by adjusting the valve opening. - The
nozzle 233 is disposed such as to extend from a lower portion to an upper portion of thereaction tube 203 along the stacking direction of thewafers 200. Thenozzle 233 is provided with gas supply holes 248 b through which a plurality of gases are supplied. - The
boat 217 is provided at a central portion in thereaction tube 203. The plurality ofwafers 200 are stacked on theboat 217. Thewafers 200 are stacked at the same distances from one another. Theboat 217 can come into and out from thereaction tube 203 by a boat elevator mechanism (not shown). To enhance the consistency of processing, a boatrotating mechanism 267 which is rotating means for rotating theboat 217 is provided. By rotating the boatrotating mechanism 267, theboat 217 held by thequartz cap 218 is rotated. - A
controller 121 which is control means controls the first and secondmass flow controllers fourth valves valves heater 207, thevacuum pump 246, the boatrotating mechanism 267, and adjustment of flow rates of the first and secondmass flow controllers third valves valves fourth valve 243 d, adjustment of the temperature of theheater 207, actuation and stop of thevacuum pump 246, adjustment of rotation speed of the boatrotating mechanism 267, and vertical movement of the boat elevator mechanism. - Next, examples of forming operation of Al2O3 films using TMA and O3 will be explained.
- First,
semiconductor silicon wafers 200 on which films are to be formed are loaded on theboat 217, and theboat 217 is transferred into theprocessing furnace 202. After the transfer, the following three steps are carried out in succession. - In step 1, O3 gas is allowed to flow. First, the first valve 243 a provided in the first
gas supply tube 232 a and thefourth valve 243 d provided in thegas exhausting tube 231 are opened, and gas is exhausted from thegas exhausting tube 231 while supplying O3 gas whose flow rate is adjusted by the first valve 243 a from the firstgas supply tube 232 a into theprocessing furnace 202 through the gas supply holes 248 b of thenozzle 233 and in this state. When O3 gas is allowed to flow, thefourth valve 243 d is appropriately adjusted, and the pressure in theprocessing furnace 202 is set to 10 to 100 Pa. A supply flow rate of O3 controlled by the firstmass flow controller 241 a is 1000 to 1000 sccm. Thewafers 200 are exposed to O3 for 2 to 120 seconds. The temperature of theheater 207 at that time is set such that the temperature of the wafers becomes 250 to 450° C. - At the same time, if the open/
close valve 253 is opened and inert gas is allowed to flow from theinert gas line 232 c which is connected to an intermediate portion of thegas supply tube 232 b, it is possible to prevent O3 gas from flowing toward TMA. - At that time, the gas flowing into the
processing furnace 202 is O3 and only inert gas such as N2 and Ar, and there exists no TMA. Therefore, O3 does not cause the vapor-phase reaction, and surface-reacts with a ground film on thewafer 200. - In step 2, the first valve 243 a of the first
gas supply tube 232 a is closed to stop the supply of O3. Thegas exhausting tube 231fourth valve 243 d is held opened, theprocessing furnace 202 is evacuated by thevacuum pump 246 to a pressure equal to or lower than 20 Pa, and remaining O3 is exhausted from theprocessing furnace 202. At that time, inert gas such as N2 is supplied into theprocessing furnace 202 from the firstgas supply tube 232 a which is an O3 supply line and from the secondgas supply tubes 232 b which is a TMA supply line, the evacuating effect of remaining O3 is further enhanced. - In step 3, TMA gas is allowed to flow. Here, TMA is liquid at the normal temperature. To supply TMA to the
processing furnace 202, there are a method in which TMA is heated and evaporated and then is supplied to theprocessing furnace 202, and a method in which inert gas called carrier gas such as nitrogen gas and rare gas is allowed to flow into theTMA container 260, and evaporated TMA is supplied to the processing furnace together with the carrier gas. Among them, the later method will be explained. First, all of avalve 252 provided in a carriergas supply tube 232 b, avalve 250 provided between theTMA container 260 and theprocessing furnace 202 and thefourth valve 243 d provided in thegas exhausting tube 231 are opened, carrier gas whose flow rate is adjusted by the secondmass flow controller 241 b is allowed to flow through theTMA container 260 from the carriergas supply tube 232 b, and mixture gas of TMA and carrier gas is supplied to theprocessing furnace 202 from the gas supply holes 248 b and in this state, gas is exhausted from thegas exhausting tube 231. When TMA gas is allowed to flow, thefourth valve 243 d is appropriately adjusted and the pressure in theprocessing furnace 202 is set to 10 to 900 Pa. The supply flow rate of carrier gas controlled by the secondmass flow controller 241 a is 10000 sccm or less. The time during which TMA is supplied is set to 1 to 4 seconds. The time during which wafers are exposed to higher pressure atmosphere to further adsorb may be set to 0 to 4 seconds. The temperature of the wafer at that time is 250 to 450° C. like the case in which O3 is supplied. By supplying TMA, O3 of the ground film and TMA surface react with each other, and Al2O3 film is formed on thewafer 200. - At the same time, if the open/
close valve 254 is opened and inert gas is allowed to flow from theinert gas line 232 d which is connected to an intermediate portion of thegas supply tube 232 a, it is possible to prevent TMA gas from flowing toward O3 side. - After films are formed, the
valve 250 is closed, thefourth valve 243 d is opened, theprocessing furnace 202 is evacuated, and remaining gas which contributed to the formation of TMA films is exhausted. At that time, if inert gas such as N2 is supplied into theprocessing furnace 202 from the firstgas supply tube 232 a which is the O3 supply line and from the secondgas supply tubes 232 b which is the TMA supply line, the exhausting effect of remaining gas after the gas contributed to the formation of TMA films from theprocessing furnace 202 is enhanced. - If the steps 1 to 3 are defined as one cycle, Al2O3 films having predetermined thickness can be formed on the
wafers 200 by repeating this cycle a plurality of times. - The
processing furnace 202 is evacuated to remove O3 gas and then, TMA is allowed to flow. Therefore, O3 gas and TMA do not react with each other on the way to thewafers 200. The supplied TMA can effectively react only with O3 which is adsorbed to thewafers 200. - The first
gas supply tube 232 a which is the O3 supply line and from the secondgas supply tubes 232 b which is the TMA supply line merge with each other in theprocessing furnace 202. With this, TMA and O3 can be adsorbed and can react with each other alternately even in thenozzle 233, thereby forming Al2O3 deposition films, and it is possible to avoid such a problem that Al film that can be a foreign matter generation source in the TMA nozzle when TMA and O3 are supplied through independent nozzles. The Al2O3 film has more excellent adhesion as compared with Al film, and the Al2O3 film is less prone to be peeled off and thus, Al2O3 film is less prone to be the foreign matter generation source. - Next, referring to
FIG. 4 , an outline of the semiconductor producing apparatus which is one example of the semiconductor producing apparatus to which the present invention is preferably applied will be explained. - A
cassette stage 105 as a holding tool delivery member which deliveries acassette 100 as a substrate accommodating container between acasing 101 and an external transfer apparatus (not shown) is provided on a front surface side in thecasing 101. A cassette elevator 115 as elevator means is provided on a rear side of thecassette stage 105. Acassette loader 114 as transfer means is mounted on the cassette elevator 115. Acassette shelf 109 as placing means of thecassette 100 is provided on the rear side of the cassette elevator 115, and anauxiliary cassette shelf 110 is provided also above thecassette stage 105. Aclean unit 118 is provided above theauxiliary cassette shelf 110 so that clean air can flow into thecasing 101. - The
processing furnace 202 is provided above a rear portion of thecasing 101. Aboat elevator 121 as elevator means is provided below theprocessing furnace 202. Theboat elevator 121 vertically moves theboat 217 as the substrate holding means to and from theprocessing furnace 202. Theboat 217 holds thewafers 200 as substrates in the multi-stacked manner in their horizontal attitudes. Theseal cap 219 as a lid is mounted on a tip end of a vertically movingmember 122 which is mounted on theboat elevator 121, and theseal cap 219 vertically supports theboat 217. Aloading elevator 113 as elevator means is provided between theboat elevator 121 and thecassette shelf 109. Awafer loader 112 as transfer means is mounted on theloading elevator 113. Afurnace opening shutter 116 as a shielding member is provided by the side of theboat elevator 121. Thefurnace opening shutter 116 has an opening/closing mechanism and closes a lower surface of theprocessing furnace 202. - The
cassette 100 in which thewafers 200 are rotated through 90° by thecassette stage 105 such thatwafers 200 are brought into thecassette stage 105 from an external transfer apparatus (not shown) and thewafers 200 assume the horizontal attitudes. Thecassette 100 is transferred to thecassette shelf 109 or theauxiliary cassette shelf 110 from thecassette stage 105 by cooperation of vertical movement and lateral movement of the cassette elevator 115 and forward and backward movement and rotational movement of thecassette loader 114. - The
cassette shelf 109 includes atransfer shelf 123 in whichcassette 100 to be transferred by thewafer loader 112 is accommodated. Thecassette 100 on which thewafers 200 are set is transferred to thetransfer shelf 123 by the cassette elevator 115 and thecassette loader 114. - If the
cassette 100 is transferred to thetransfer shelf 123, thewafers 200 are loaded on theboat 217 which is lowered from thetransfer shelf 123 by cooperation of forward and backward motion and rotational motion of thewafer loader 112 and vertical motion of theloading elevator 113. - If a necessary number of
wafers 200 are loaded on theboat 217, theboat 217 is inserted into theprocessing furnace 202 by theboat elevator 121, and theprocessing furnace 202 is air-tightly closed with theseal cap 219. In the air-tightlyclosed processing furnace 202, thewafers 200 are heated, processing gas is supplied into theprocessing furnace 202, and thewafers 200 are processed. - If the processing of the
wafers 200 is completed, thewafers 200 are moved to thecassette 100 of thetransfer shelf 123 from theboat 217 following the above procedure in reverse, thecassette 100 is moved to thecassette stage 105 from thetransfer shelf 123 by thecassette loader 114, and is transferred out from thecasing 101 by the external transfer apparatus (not shown). In the state in which theboat 217 is lowered, thefurnace opening shutter 116 closes the lower surface of theprocessing furnace 202 to prevent outside air from entering into theprocessing furnace 202. - The transfer motions of the
cassette loader 114 and the like are controlled by transfer control means 124. - The entire disclosure of Japanese Patent Application No. 2003-293953 filed on Aug. 15, 2003 including specification, claims, drawings and abstract are incorporated herein by reference in its entirety.
- As explained above, according to the embodiment of the present invention, it becomes possible to form Al2O3 films by the ALD method using the batch type processing apparatus which has excellent mass productivity, and to suppress the formation of films such as Al films in the nozzle which is by-product.
- As a result, the present invention can be preferably utilized especially for a substrate processing apparatus which processes a semiconductor wafer, and for a device producing method using the substrate processing apparatus.
Claims (1)
1. A producing method of a semiconductor device, comprising:
transferring a plurality of substrates into a processing chamber of a substrate processing apparatus comprising:
the processing chamber which accommodates the plurality of substrates with the substrates being stacked therein;
a heating member which heats the substrates;
two supply tubes through which two gases respectively flow independently from each other; and
a single gas supply member which supplies the gases into the processing chamber and which has a portion extending along a stacked direction of the substrates to a region whose temperature is equal to or higher than a decomposition temperature of at least one of the two gases, wherein
the two supply tubes are connected to the gas supply member at a location whose temperature is lower than the decomposition temperature of the at least one gas, the two gases are supplied into the processing chamber through the gas supply member, and a connection portion of the two supply tubes and the gas supply
member is disposed in the processing chamber;
forming films on surfaces of the substrates and on an inner wall of the gas supply member by repeating:
supplying a first one of the two gases into the processing chamber;
removing the first gas and an intermediate thereof which have been remained in the processing chamber;
supplying a second one of the two gases into the processing chamber; and
removing the second gas and an intermediate thereof which have been remained in the processing chamber;
transferring the plurality of substrates out from the processing chamber; and
supplying a cleaning gas into the processing chamber through the gas supply member, thereby performing cleaning of the processing chamber and removing the film formed on the gas supply member.
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US13/270,811 US8598047B2 (en) | 2003-08-15 | 2011-10-11 | Substrate processing apparatus and producing method of semiconductor device |
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US12/414,128 US20090186467A1 (en) | 2003-08-15 | 2009-03-30 | Substrate Processing Apparatus and Producing Method of Semiconductor Device |
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US11/549,698 Division US20070271580A1 (en) | 2006-05-16 | 2006-10-16 | Methods, Apparatus and Computer Program Products for Audience-Adaptive Control of Content Presentation Based on Sensed Audience Demographics |
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- 2004-07-09 KR KR1020057017612A patent/KR100819639B1/en active IP Right Grant
- 2004-07-09 US US10/549,698 patent/US20060258174A1/en not_active Abandoned
- 2004-08-13 TW TW093124294A patent/TWI243403B/en active
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Also Published As
Publication number | Publication date |
---|---|
TW200514130A (en) | 2005-04-16 |
US20120034788A1 (en) | 2012-02-09 |
WO2005017987A1 (en) | 2005-02-24 |
CN1762042A (en) | 2006-04-19 |
US8598047B2 (en) | 2013-12-03 |
CN100367459C (en) | 2008-02-06 |
JP3913723B2 (en) | 2007-05-09 |
US20060258174A1 (en) | 2006-11-16 |
KR20050117574A (en) | 2005-12-14 |
KR100819639B1 (en) | 2008-04-03 |
TWI243403B (en) | 2005-11-11 |
JP2005064305A (en) | 2005-03-10 |
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