US20080012087A1 - Bonded wafer avalanche photodiode and method for manufacturing same - Google Patents
Bonded wafer avalanche photodiode and method for manufacturing same Download PDFInfo
- Publication number
- US20080012087A1 US20080012087A1 US11/725,661 US72566107A US2008012087A1 US 20080012087 A1 US20080012087 A1 US 20080012087A1 US 72566107 A US72566107 A US 72566107A US 2008012087 A1 US2008012087 A1 US 2008012087A1
- Authority
- US
- United States
- Prior art keywords
- avalanche photodiode
- layer
- further including
- substrate
- active substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 238000001465 metallisation Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 19
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
Definitions
- This invention relates to avalanche photodiodes and their methods of manufacturing.
- An avalanche photodiode is a semiconductor device that converts light into an electrical signal.
- the APD detects low levels of electromagnetic radiation (photons) and is constructed so that a photon dislodges an electron (primary electron) and creates a hole-electron pair. These holes and electrons move in the opposite direction in the semiconductor device due to the electrical field that is applied across the photodiode. The movement of electrons through the structure is called photocurrent and it is proportional to the light intensity.
- the primary electron hits other atoms with sufficient velocity and energy in the lattice structure to create additional electron-hole pairs. This cascade effect in avalanche photodiodes results in an effective gain and allows the detection of very low light levels. Indeed, even single photon detection is possible.
- APDs are typically manufactured on thin wafers. This is because the use of an APD wafer having an active thickness on the order of or greater than 200 ⁇ m results in undesirable electrical characteristics of the APD. However, the thinness of typical APD wafers may make them fragile during handling and high temperature furnacing. Additionally, the frail nature of these wafers may make them unsuitable for large dimension APDs due to breakage and poor yield.
- a prior method for increasing the thickness of APD wafers is to grow a thin electrically active “epi” layer over a thicker substrate layer.
- a disadvantage to this approach is that is difficult to grow crystals having an acceptable quality on top of the substrate. This difficulty of growing acceptable crystals increases as the thickness of the crystal increases.
- Another disadvantage is that the active layer can not be isolated from the substrate.
- the subject invention results from the realization that an avalanche photodiode having greater thickness and strength can be manufactured by using a high quality optically active substrate, a handle substrate bonded to the active substrate, and an avalanche photodiode active area formed in the high quality optically active substrate that includes a high field region for generating avalanche current gain.
- This invention features an avalanche photodiode including a high quality electrooptically active substrate, a handle substrate bonded to the active substrate, and an avalanche photodiode active area formed in the high quality electrooptically active substrate including a high field region for generating avalanche current gain.
- the high quality electrooptically active substrate may include lightly doped silicon, which has a resistivity greater than 100 ohm ⁇ cm.
- the handle substrate may include heavily doped silicon, which has a resistivity less than 1 ohm ⁇ cm.
- the avalanche photodiode may further include a heavily doped layer between the lightly doped silicon layer and the heavily doped silicon layer.
- the avalanche photodiode may also further include an oxide layer between the lightly doped silicon layer and the heavily doped silicon layer.
- the high quality electrooptically active substrate may include p ⁇ silicon.
- the handle substrate may include p+ silicon.
- the avalanche photodiode may further include a p+ layer between the p ⁇ silicon layer and the p+ silicon layer.
- the avalanche photodiode may further include an oxide layer between the p ⁇ silicon layer and the p+ silicon layer.
- the high quality optically active substrate may include n ⁇ silicon.
- the handle substrate may include n+ silicon.
- the avalanche photodiode may further include an n+ layer between the n ⁇ silicon layer and the n+ silicon layer.
- the avalanche photodiode may further include an oxide layer between the n ⁇ silicon layer and the n+ silicon layer.
- the avalanche photodiode active area may include a gain region and a channel stop formed in the high quality optically active substrate.
- the avalanche photodiode may further include a passivated layer formed on the surface of the avalanche photodiode for protecting the surface of the avalanche photodiode.
- the avalanche photodiode may further include a junction formed adjacent the gain region for providing the high field region that generates avalanche current gain.
- the avalanche photodiode may further include an anti-reflection coating formed adjacent the diffused junction for reducing the reflection of radiation from the avalanche photodiode.
- the avalanche photodiode may further include a metallization layer for providing electrical contact.
- the avalanche photodiode may further include a well in the handle substrate.
- the avalanche photodiode may further include a heavily doped contact layer formed in the well.
- the heavily doped contact layer may include p+ silicon.
- the avalanche photodiode may further include a back metallization layer formed adjacent the heavily doped layer and adjacent the handle substrate.
- This invention also features a method of manufacturing an avalanche photodiode, the method including providing a wafer having a high quality electrooptically active substrate and a handle substrate bonded to the active substrate, diffusing a gain region in the optically active substrate, and diffusing a junction adjacent the gain region to provide a high field region for generating avalanche current gain.
- the method may further include the step of diffusing a channel stop in the optically active substrate to reduce current leakage.
- the method may further include the step of passivating the surface of the avalanche photodiode for protecting the surface.
- the method may further include the step of providing an anti-reflective coating on the diffused junction for reducing the reflection of radiation.
- the method may further include the step of etching a well in the handle substrate.
- the method may further include providing a heavily doped layer in the well.
- This invention further features an avalanche photodiode including a high quality active substrate, a handle substrate bonded to the active substrate, a well formed in the handle substrate, and an avalanche photodiode active area formed in the high quality active substrate, the active area including a gain region diffused in the active substrate, and a junction diffused adjacent the gain region to provide a high field region for generating avalanche current gain.
- the avalanche photodiode may further include a passivated layer formed adjacent the surface of the avalanche photodiode for protecting the surface of the avalanche photodiode.
- the handle substrate may be an active substrate.
- FIG. 1 is a schematic cross-sectional view of one example of a bonded wafer avalanche photodiode in accordance with the subject invention
- FIGS. 2-5 are schematic diagrams illustrating the primary steps associated with the manufacture of the bonded wafer avalanche photodiode of FIG. 1 ;
- FIGS. 6-9 are schematic diagrams that illustrate the primary steps associated with the manufacture of an alternative embodiment of a bonded wafer avalanche photodiode in which a well is etched in the back of the avalanche photodiode;
- FIG. 10 is a schematic cross-sectional view of a front entry avalanche photodiode.
- FIG. 11 is a schematic cross-sectional view of a rear entry avalanche photodiode.
- avalanche photodiode (APD) 10 FIG. 1
- wafer 11 comprising handle substrate 12 bonded to high quality optically active substrate 14 .
- Optically active substrate 14 includes active area 16 that includes high field region 18 for generating avalanche current gain.
- Handle substrate 12 may be purchased with active substrate 14 already bonded thereto. Alternatively, handle substrate 12 may be purchased separately from active substrate 14 and handle substrate 12 can be subsequently bonded to active substrate 14 .
- One method of manufacturing bonded wafer APD 10 begins with providing a wafer 11 , FIG. 2A , in which handle substrate 12 is bonded to optically active substrate 14 .
- Handle substrate 12 may have a thickness of 20-1000 ⁇ m, but preferably has a thickness of 250-500 ⁇ m.
- Active substrate 14 may have the thickness of 2-200 ⁇ M, but preferably has a thickness of 6-150 ⁇ m.
- Handle substrate 12 typically includes heavily doped silicon which is p+ silicon, but may alternatively be n+ silicon depending on the type of APD.
- Optically active substrate 14 includes lightly doped silicon which is p ⁇ silicon, but may likewise alternatively be n ⁇ silicon depending on the type of APD.
- An alternative embodiment of bonded wafer 11 a , FIG. 2B includes a heavily doped silicon layer 20 , FIG. 2A , which is added to active substrate 14 prior to bonding active substrate 14 to handle substrate 12 .
- Heavily doped silicon layer 20 improves the interface quality between substrates 12 and 14 .
- Heavily doped silicon layer 20 may include either a p+ layer or an n+ layer depending on the type of APD.
- an oxide layer may be used between substrates 12 and 14 to improve interface quality.
- Gain region 22 , FIG. 3 and channel stops 24 are diffused in the APD active area 16 a of optically active substrate 14 .
- Channel stops 24 provide a barrier to prevent small leakage paths from traveling to the outside of optically active substrate 14 .
- junction 26 , FIG. 4 is diffused adjacent gain region 22 to provide high field region 18 a which generates the avalanche current gain of APD 10 a .
- a passivated layer 28 is formed on the surface of APD 10 a for protecting the surface of the APD. Passivated layer 28 preferably includes silicon nitride and silicon oxide.
- Anti-reflection coating 30 is formed adjacent diffused junction 26 for reducing the reflection of radiation from APD 10 a .
- Metallization layers 32 and 34 are provided for electrical contact.
- Metallization layer 32 is formed adjacent diffused junction 26 and anti-reflection coating 30 .
- Metallization layer 34 is formed adjacent handle substrate 12 .
- high quality optically active substrate 14 is provided with a strong handle substrate 12 to provide an APD having greater thickness and strength than those of the prior art, without reducing the desirable electrical characteristics of the APD.
- bonded silicon wafer 11 FIG. 6 which includes handle substrate 12 b and active substrate 14 b .
- Wafer 11 a may additionally include a heavily doped layer 20 b , FIG. 6A , which is added prior to bonding substrates 12 b and 14 b as done in FIG. 2A .
- heavily doped layer 20 a may include either a p+ layer or an n+ layer, depending on the type of APD.
- Wafer 11 c may include oxide layer 40 , FIG. 6B , which may be added in addition to heavily doped layer 20 b.
- FIG. 7 gain region 22 a and junction 26 a are diffused in active area 16 a of high quality active substrate 14 to create high gain region 18 b .
- guard ring structure 42 may be provided to reduce the electric field at the edge of the junction.
- Dividing line 40 is provided to show that APD 10 b may include oxide layer 40 but may be manufactured without the oxide layer.
- Well 46 is etched in the back surface of handle substrate 12 b .
- the etching of well 46 also removes oxide layer 40 if one is present in APD 10 b.
- Heavily doped layer 48 is provided through the back contact of well 46 to provide improved performance of APD 10 b .
- a front entry APD 10 b is formed by adding back metallization layers 50 and 52 and front metallization layer 54 and anti-reflection coating 56 .
- a rear entry standard APD 10 d is provided by adding metallization layers 60 and 62 and anti-reflection coating 66 adjacent well 46 and adding reflective metallization layer 64 adjacent high gain region 18 b to the APD of 10 b of FIG. 9 .
Abstract
An avalanche photodiode includes a high quality electrooptically active substrate, a handle substrate bonded to the active substrate, and an avalanche photodiode active area formed in the high quality electrooptically active substrate including a high field region for generating avalanche current gain. By using a handle wafer bonded to the active substrate, the avalanche photodiode of the subject invention has a greater strength and thickness without the reduction of desirable electrical characteristics.
Description
- This application claims benefit of U.S. Provisional Application Ser. No. 60/793,084, filed on Apr. 19, 2006, entitled “Bonded Wafer Avalanche Photodiode and Method for Manufacturing Same”, incorporated herein by this reference.
- This invention relates to avalanche photodiodes and their methods of manufacturing.
- An avalanche photodiode (APD) is a semiconductor device that converts light into an electrical signal. The APD detects low levels of electromagnetic radiation (photons) and is constructed so that a photon dislodges an electron (primary electron) and creates a hole-electron pair. These holes and electrons move in the opposite direction in the semiconductor device due to the electrical field that is applied across the photodiode. The movement of electrons through the structure is called photocurrent and it is proportional to the light intensity. In APDs, the primary electron hits other atoms with sufficient velocity and energy in the lattice structure to create additional electron-hole pairs. This cascade effect in avalanche photodiodes results in an effective gain and allows the detection of very low light levels. Indeed, even single photon detection is possible.
- One application of an avalanche photodiode is disclosed in U.S. Pat. No. 6,525,305 B2, which is incorporated herein by reference. The '305 patent discloses a large current watchdog circuit that includes a variable impedance to protect the photodetector from high current levels.
- APDs are typically manufactured on thin wafers. This is because the use of an APD wafer having an active thickness on the order of or greater than 200 μm results in undesirable electrical characteristics of the APD. However, the thinness of typical APD wafers may make them fragile during handling and high temperature furnacing. Additionally, the frail nature of these wafers may make them unsuitable for large dimension APDs due to breakage and poor yield.
- One prior method for increasing the thickness of APD wafers is to grow a thin electrically active “epi” layer over a thicker substrate layer. A disadvantage to this approach, however, is that is difficult to grow crystals having an acceptable quality on top of the substrate. This difficulty of growing acceptable crystals increases as the thickness of the crystal increases. Another disadvantage is that the active layer can not be isolated from the substrate.
- It is therefore an object of this invention to provide a new method for manufacturing an improved avalanche photodiode.
- It is a further object of this invention to provide such an avalanche photodiode having a greater thickness.
- It is a further object of this invention to provide such an avalanche photodiode having a greater strength.
- It is a further object of this invention to provide such an avalanche photodiode having a greater electromagnetic detection in certain applications.
- The subject invention results from the realization that an avalanche photodiode having greater thickness and strength can be manufactured by using a high quality optically active substrate, a handle substrate bonded to the active substrate, and an avalanche photodiode active area formed in the high quality optically active substrate that includes a high field region for generating avalanche current gain.
- The subject invention, however, in other embodiments, need not achieve all these objectives and the claims hereof should not be limited to structures or methods capable of achieving these objectives.
- This invention features an avalanche photodiode including a high quality electrooptically active substrate, a handle substrate bonded to the active substrate, and an avalanche photodiode active area formed in the high quality electrooptically active substrate including a high field region for generating avalanche current gain.
- In one embodiment, the high quality electrooptically active substrate may include lightly doped silicon, which has a resistivity greater than 100 ohm×cm. The handle substrate may include heavily doped silicon, which has a resistivity less than 1 ohm×cm. The avalanche photodiode may further include a heavily doped layer between the lightly doped silicon layer and the heavily doped silicon layer. The avalanche photodiode may also further include an oxide layer between the lightly doped silicon layer and the heavily doped silicon layer. The high quality electrooptically active substrate may include p− silicon. The handle substrate may include p+ silicon. The avalanche photodiode may further include a p+ layer between the p− silicon layer and the p+ silicon layer. The avalanche photodiode may further include an oxide layer between the p− silicon layer and the p+ silicon layer. The high quality optically active substrate may include n− silicon. The handle substrate may include n+ silicon. The avalanche photodiode may further include an n+ layer between the n− silicon layer and the n+ silicon layer. The avalanche photodiode may further include an oxide layer between the n− silicon layer and the n+ silicon layer. The avalanche photodiode active area may include a gain region and a channel stop formed in the high quality optically active substrate. The avalanche photodiode may further include a passivated layer formed on the surface of the avalanche photodiode for protecting the surface of the avalanche photodiode. The avalanche photodiode may further include a junction formed adjacent the gain region for providing the high field region that generates avalanche current gain. The avalanche photodiode may further include an anti-reflection coating formed adjacent the diffused junction for reducing the reflection of radiation from the avalanche photodiode. The avalanche photodiode may further include a metallization layer for providing electrical contact. The avalanche photodiode may further include a well in the handle substrate. The avalanche photodiode may further include a heavily doped contact layer formed in the well. The heavily doped contact layer may include p+ silicon. The avalanche photodiode may further include a back metallization layer formed adjacent the heavily doped layer and adjacent the handle substrate.
- This invention also features a method of manufacturing an avalanche photodiode, the method including providing a wafer having a high quality electrooptically active substrate and a handle substrate bonded to the active substrate, diffusing a gain region in the optically active substrate, and diffusing a junction adjacent the gain region to provide a high field region for generating avalanche current gain.
- In one embodiment, the method may further include the step of diffusing a channel stop in the optically active substrate to reduce current leakage. The method may further include the step of passivating the surface of the avalanche photodiode for protecting the surface. The method may further include the step of providing an anti-reflective coating on the diffused junction for reducing the reflection of radiation. The method may further include the step of etching a well in the handle substrate. The method may further include providing a heavily doped layer in the well.
- This invention further features an avalanche photodiode including a high quality active substrate, a handle substrate bonded to the active substrate, a well formed in the handle substrate, and an avalanche photodiode active area formed in the high quality active substrate, the active area including a gain region diffused in the active substrate, and a junction diffused adjacent the gain region to provide a high field region for generating avalanche current gain.
- In one embodiment, the avalanche photodiode may further include a passivated layer formed adjacent the surface of the avalanche photodiode for protecting the surface of the avalanche photodiode. The handle substrate may be an active substrate.
- Other objects, features and advantages will occur to those skilled in the art from the following description of a preferred embodiment and the accompanying drawings, in which the attached figures are embodiments of the bonded wafer APD and its method of manufacture.
-
FIG. 1 is a schematic cross-sectional view of one example of a bonded wafer avalanche photodiode in accordance with the subject invention; -
FIGS. 2-5 are schematic diagrams illustrating the primary steps associated with the manufacture of the bonded wafer avalanche photodiode ofFIG. 1 ; -
FIGS. 6-9 are schematic diagrams that illustrate the primary steps associated with the manufacture of an alternative embodiment of a bonded wafer avalanche photodiode in which a well is etched in the back of the avalanche photodiode; -
FIG. 10 is a schematic cross-sectional view of a front entry avalanche photodiode; and -
FIG. 11 is a schematic cross-sectional view of a rear entry avalanche photodiode. - Although specific features of this invention are shown in some drawings and not others, this is for convenience only as each feature may be combined with any or all of the other features in accordance with the invention.
- Aside from the preferred embodiment or embodiments disclosed below, this invention is capable of other embodiments and of being practiced or being carried out in various ways. Thus, it is to be understood that the invention is not limited in its application to the details of construction and the arrangements of components set forth in the following description or illustrated in the drawings. If only one embodiment is described herein, the claims hereof are not to be limited to that embodiment. Moreover, the claims hereof are not to be read restrictively unless there is clear and convincing evidence manifesting a certain exclusion, restriction, or disclaimer.
- Whereas APDs in the prior art are typically manufactured on thin wafers, avalanche photodiode (APD) 10,
FIG. 1 , in accordance with this invention includeswafer 11 comprisinghandle substrate 12 bonded to high quality opticallyactive substrate 14. Opticallyactive substrate 14 includesactive area 16 that includeshigh field region 18 for generating avalanche current gain.Handle substrate 12 may be purchased withactive substrate 14 already bonded thereto. Alternatively, handlesubstrate 12 may be purchased separately fromactive substrate 14 and handlesubstrate 12 can be subsequently bonded toactive substrate 14. - One method of manufacturing bonded
wafer APD 10 begins with providing awafer 11,FIG. 2A , in which handlesubstrate 12 is bonded to opticallyactive substrate 14.Handle substrate 12 may have a thickness of 20-1000 μm, but preferably has a thickness of 250-500 μm.Active substrate 14 may have the thickness of 2-200 μM, but preferably has a thickness of 6-150 μm. -
Handle substrate 12 typically includes heavily doped silicon which is p+ silicon, but may alternatively be n+ silicon depending on the type of APD. Opticallyactive substrate 14 includes lightly doped silicon which is p− silicon, but may likewise alternatively be n− silicon depending on the type of APD. - An alternative embodiment of bonded
wafer 11 a,FIG. 2B , includes a heavily dopedsilicon layer 20,FIG. 2A , which is added toactive substrate 14 prior to bondingactive substrate 14 to handlesubstrate 12. Heavily dopedsilicon layer 20 improves the interface quality betweensubstrates silicon layer 20 may include either a p+ layer or an n+ layer depending on the type of APD. Alternatively, rather than using a heavily doped silicon layer, an oxide layer may be used betweensubstrates -
Gain region 22,FIG. 3 and channel stops 24 are diffused in the APDactive area 16 a of opticallyactive substrate 14. Channel stops 24 provide a barrier to prevent small leakage paths from traveling to the outside of opticallyactive substrate 14. -
Junction 26,FIG. 4 is diffusedadjacent gain region 22 to providehigh field region 18 a which generates the avalanche current gain ofAPD 10 a. A passivatedlayer 28 is formed on the surface ofAPD 10 a for protecting the surface of the APD.Passivated layer 28 preferably includes silicon nitride and silicon oxide. -
Anti-reflection coating 30,FIG. 5 is formed adjacent diffusedjunction 26 for reducing the reflection of radiation fromAPD 10 a. Metallization layers 32 and 34 are provided for electrical contact.Metallization layer 32 is formed adjacent diffusedjunction 26 andanti-reflection coating 30.Metallization layer 34 is formedadjacent handle substrate 12. - Thus, with
APD 10 a ofFIG. 5 , high quality opticallyactive substrate 14 is provided with astrong handle substrate 12 to provide an APD having greater thickness and strength than those of the prior art, without reducing the desirable electrical characteristics of the APD. - In one alternative embodiment, bonded
silicon wafer 11,FIG. 6 , is provided which includeshandle substrate 12 b andactive substrate 14 b.Wafer 11 a may additionally include a heavily dopedlayer 20 b,FIG. 6A , which is added prior tobonding substrates FIG. 2A . As with heavily dopedlayer 20, heavily doped layer 20 a may include either a p+ layer or an n+ layer, depending on the type of APD. Wafer 11 c may includeoxide layer 40,FIG. 6B , which may be added in addition to heavily dopedlayer 20 b. - To provide
APD 10 b,FIG. 7 gain region 22 a and junction 26 a are diffused inactive area 16 a of high qualityactive substrate 14 to createhigh gain region 18 b. Optionally,guard ring structure 42 may be provided to reduce the electric field at the edge of the junction. Dividingline 40 is provided to show thatAPD 10 b may includeoxide layer 40 but may be manufactured without the oxide layer. - Well 46,
FIG. 8 , is etched in the back surface ofhandle substrate 12 b. The etching of well 46 also removesoxide layer 40 if one is present inAPD 10 b. - Heavily doped
layer 48,FIG. 9 , is provided through the back contact of well 46 to provide improved performance ofAPD 10 b. Afront entry APD 10 b is formed by adding back metallization layers 50 and 52 andfront metallization layer 54 andanti-reflection coating 56. Alternatively, a rearentry standard APD 10 d,FIG. 10 , is provided by adding metallization layers 60 and 62 andanti-reflection coating 66adjacent well 46 and addingreflective metallization layer 64 adjacenthigh gain region 18 b to the APD of 10 b ofFIG. 9 . - The words “including”, “comprising”, “having”, and “with” as used herein are to be interpreted broadly and comprehensively and are not limited to any physical interconnection. Moreover, any embodiments disclosed in the subject application are not to be taken as the only possible embodiments. Other embodiments will occur to those skilled in the art and are within the following claims.
- In addition, any amendment presented during the prosecution of the patent application for this patent is not a disclaimer of any claim element presented in the application as filed: those skilled in the art cannot reasonably be expected to draft a claim that would literally encompass all possible equivalents, many equivalents will be unforeseeable at the time of the amendment and are beyond a fair interpretation of what is to be surrendered (if anything), the rationale underlying the amendment may bear no more than a tangential relation to many equivalents, and/or there are many other reasons the applicant can not be expected to describe certain insubstantial substitutes for any claim element amended.
Claims (30)
1. An avalanche photodiode comprising:
a high quality electrooptically active substrate;
a handle substrate bonded to the active substrate; and
an avalanche photodiode active area formed in the high quality optically active substrate including a high field region for generating avalanche current gain.
2. The avalanche photodiode of claim 1 in which the high quality electrooptically active substrate includes lightly doped silicon.
3. The avalanche photodiode of claim 2 in which the handle substrate includes heavily doped silicon.
4. The avalanche photodiode of claim 3 further including a heavily doped layer between the lightly doped silicon layer and the heavily doped silicon layer.
5. The avalanche photodiode of claim 3 further including an oxide layer between the lightly doped silicon layer and the heavily doped silicon layer.
6. The avalanche photodiode of claim 2 in which the high quality electrooptically active substrate includes p− silicon.
7. The avalanche photodiode of claim 6 in which the handle substrate includes p+ silicon.
8. The avalanche photodiode of claim 7 further including a p+ layer between the p− silicon layer and the p+ silicon layer.
9. The avalanche photodiode of claim 7 further including an oxide layer between the p− silicon layer and the p+ silicon layer.
10. The avalanche photodiode of claim 2 in which the high quality electrooptically active substrate includes n− silicon.
11. The avalanche photodiode of claim 10 in which the handle substrate includes n+ silicon.
12. The avalanche photodiode of claim 11 further including an n+ layer between the n− silicon layer and the n+ silicon layer.
13. The avalanche photodiode of claim 11 further including an oxide layer between the n− silicon layer and the n+ silicon layer.
14. The avalanche photodiode of claim 1 in which the avalanche photodiode active area includes a gain region and a channel stop formed in the high quality optically active substrate.
15. The avalanche photodiode of claim 14 further including a passivated layer formed on the surface of the avalanche photodiode for protecting the surface of the avalanche photodiode.
16. The avalanche photodiode of claim 14 further including a junction formed adjacent the gain region for providing the high field region that generates avalanche current gain.
17. The avalanche photodiode of claim 16 further including an anti-reflection coating formed adjacent the diffused junction for reducing the reflection of radiation from the avalanche photodiode.
18. The avalanche photodiode of claim 1 further including a well in said handle substrate.
19. The avalanche photodiode of claim 18 further including a heavily doped contact layer formed in the well.
20. The avalanche photodiode of claim 19 in which the heavily doped contact layer includes p+ silicon.
21. The avalanche photodiode of claim 19 further including a back metallization layer formed adjacent the heavily doped layer and adjacent the handle substrate.
22. A method of manufacturing an avalanche photodiode, the method comprising:
providing a wafer having a high quality electrooptically active substrate and a handle substrate bonded to the active substrate;
diffusing a gain region in the electrooptically active substrate; and
diffusing a junction adjacent the gain region to provide a high field region for generating avalanche current gain.
23. The method of claim 22 further including the step of diffusing a channel stop in the electrooptically active substrate to reduce current leakage.
24. The method of claim 22 further including the step of passivating the surface of the avalanche photodiode for protecting the surface.
25. The method of claim 24 further including the step of providing an anti-reflective coating on the diffused junction for reducing the reflection of radiation.
26. The method of claim 22 further including the step of etching a well in the handle substrate.
27. The method of claim 26 further including providing a heavily doped layer in the well.
28. An avalanche photodiode comprising:
a high quality active substrate;
a handle substrate bonded to the active substrate;
a well formed in the handle substrate; and
an avalanche photodiode active area formed in the high quality active substrate, the active area including:
a gain region diffused in the active substrate, and
a junction diffused adjacent the gain region to provide a high field region for generating avalanche current gain.
29. The avalanche photodiode of claim 28 , further including a passivated layer formed adjacent the surface of the avalanche photodiode for protecting the surface of the avalanche photodiode.
30. The avalanche photodiode of claim 28 in which the handle substrate is an active substrate.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/725,661 US20080012087A1 (en) | 2006-04-19 | 2007-03-20 | Bonded wafer avalanche photodiode and method for manufacturing same |
EP20070719577 EP2013915A4 (en) | 2006-04-19 | 2007-04-18 | Bonded wafer avalanche photodiode and method for manufacturing same |
JP2009505690A JP5079785B2 (en) | 2006-04-19 | 2007-04-18 | Bonded wafer avalanche photodiode and manufacturing method thereof |
PCT/CA2007/000650 WO2007118330A1 (en) | 2006-04-19 | 2007-04-18 | Bonded wafer avalanche photodiode and method for manufacturing same |
CA2643938A CA2643938C (en) | 2006-04-19 | 2007-04-18 | Bonded wafer avalanche photodiode and method for manufacturing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79308406P | 2006-04-19 | 2006-04-19 | |
US11/725,661 US20080012087A1 (en) | 2006-04-19 | 2007-03-20 | Bonded wafer avalanche photodiode and method for manufacturing same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080012087A1 true US20080012087A1 (en) | 2008-01-17 |
Family
ID=38609008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/725,661 Abandoned US20080012087A1 (en) | 2006-04-19 | 2007-03-20 | Bonded wafer avalanche photodiode and method for manufacturing same |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080012087A1 (en) |
EP (1) | EP2013915A4 (en) |
JP (1) | JP5079785B2 (en) |
CA (1) | CA2643938C (en) |
WO (1) | WO2007118330A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013009615A1 (en) | 2011-07-08 | 2013-01-17 | Excelitas Technologies LED Solutions, Inc. | Photon counting uv-apd |
US20130214134A1 (en) * | 2010-11-12 | 2013-08-22 | Kabushiki Kaisha Toshiba | Photon detector |
US11081612B2 (en) * | 2015-12-01 | 2021-08-03 | Sharp Kabushiki Kaisha | Avalanche photodiode |
US20230065356A1 (en) * | 2021-08-31 | 2023-03-02 | Brookhaven Science Associates, Llc | Simplified Structure for a Low Gain Avalanche Diode with Closely Spaced Electrodes |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2793273B1 (en) * | 2013-04-17 | 2016-12-28 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Silicon photomultiplier with very low optical cross-talk and improved readout |
JP7178613B2 (en) * | 2019-03-29 | 2022-11-28 | パナソニックIpマネジメント株式会社 | photodetector |
Citations (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4127932A (en) * | 1976-08-06 | 1978-12-05 | Bell Telephone Laboratories, Incorporated | Method of fabricating silicon photodiodes |
US4727649A (en) * | 1983-11-21 | 1988-03-01 | Sumitomo Electric Industries, Ltd. | Method for producing an optical device |
US5021854A (en) * | 1987-12-03 | 1991-06-04 | Xsirius Photonics, Inc. | Silicon avalanche photodiode array |
US5374564A (en) * | 1991-09-18 | 1994-12-20 | Commissariat A L'energie Atomique | Process for the production of thin semiconductor material films |
US5451547A (en) * | 1991-08-26 | 1995-09-19 | Nippondenso Co., Ltd. | Method of manufacturing semiconductor substrate |
US5506153A (en) * | 1993-12-08 | 1996-04-09 | Siemens Aktiengesellschaft | Method for manufacture of a controllable power semiconductor element with buffer zone |
US5541122A (en) * | 1995-04-03 | 1996-07-30 | Motorola Inc. | Method of fabricating an insulated-gate bipolar transistor |
US5596186A (en) * | 1993-12-08 | 1997-01-21 | Nikon Corporation | High sensitivity silicon avalanche photodiode |
US5755914A (en) * | 1992-08-25 | 1998-05-26 | Canon Kabushiki Kaisha | Method for bonding semiconductor substrates |
US5804494A (en) * | 1993-08-20 | 1998-09-08 | Shin-Etsu Handotai Co., Ltd. | Method of fabricating bonded wafer |
US6136667A (en) * | 1997-10-08 | 2000-10-24 | Lucent Technologies Inc. | Method for bonding two crystalline substrates together |
US6229162B1 (en) * | 1998-05-08 | 2001-05-08 | Nec Corporation | Planar-type avalanche photodiode |
US6245161B1 (en) * | 1997-05-12 | 2001-06-12 | Silicon Genesis Corporation | Economical silicon-on-silicon hybrid wafer assembly |
US20010035540A1 (en) * | 2000-04-28 | 2001-11-01 | Fujitsu Limited, Kawasaki, Japan | Photodetector having a mixed crystal layer of SiGeC |
US6492239B2 (en) * | 2000-06-29 | 2002-12-10 | Samsung Electronic Co, Ltd | Method for fabricating avalanche photodiode |
US6525305B2 (en) * | 2000-09-11 | 2003-02-25 | Perkinelmer Canada, Inc. | Large current watchdog circuit for a photodetector |
US6548878B1 (en) * | 1998-02-05 | 2003-04-15 | Integration Associates, Inc. | Method for producing a thin distributed photodiode structure |
US20030178636A1 (en) * | 2002-02-11 | 2003-09-25 | Jds Uniphase Corporation | Back illuminated photodiodes |
US6690078B1 (en) * | 1999-08-05 | 2004-02-10 | Integration Associates, Inc. | Shielded planar dielectrically isolated high speed pin photodiode and method for producing same |
US20040087109A1 (en) * | 2002-08-29 | 2004-05-06 | Mccann Paul Damien | Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure |
US20050133838A1 (en) * | 2003-12-17 | 2005-06-23 | Samsung Electronics Co., Ltd. | Photodiode and method of manufacturing the same |
US6943051B2 (en) * | 2000-10-19 | 2005-09-13 | Quantum Semiconductor Llc | Method of fabricating heterojunction photodiodes integrated with CMOS |
US20050205930A1 (en) * | 2004-03-16 | 2005-09-22 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
US20050253132A1 (en) * | 2002-07-11 | 2005-11-17 | Marshall Gillian F | Photodetector circuits |
US7192841B2 (en) * | 2002-04-30 | 2007-03-20 | Agency For Science, Technology And Research | Method of wafer/substrate bonding |
US7341921B2 (en) * | 2003-05-14 | 2008-03-11 | University College Cork - National University Of Ireland, Cork | Photodiode |
US7605052B2 (en) * | 1999-06-30 | 2009-10-20 | Intersil Corporation | Method of forming an integrated circuit having a device wafer with a diffused doped backside layer |
US7655999B2 (en) * | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
US7759623B2 (en) * | 2004-05-05 | 2010-07-20 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier |
US20100237366A1 (en) * | 2009-03-17 | 2010-09-23 | Kabushiki Kaisha Toshiba | Method for manufacturing light emitting device and light emitting device |
US7863647B1 (en) * | 2007-03-19 | 2011-01-04 | Northrop Grumman Systems Corporation | SiC avalanche photodiode with improved edge termination |
US20120117799A1 (en) * | 2010-11-11 | 2012-05-17 | Dr. Qi Luo | Miniaturized Spring Contact |
US20120293191A1 (en) * | 2011-05-19 | 2012-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | HVMOS Reliability Evaluation using Bulk Resistances as Indices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63215084A (en) * | 1987-03-04 | 1988-09-07 | Toshiba Corp | Semiconductor photodetector |
JP3091903B2 (en) * | 1994-08-17 | 2000-09-25 | セイコーインスツルメンツ株式会社 | Avalanche photodiode and method of manufacturing the same |
US6054369A (en) * | 1997-06-30 | 2000-04-25 | Intersil Corporation | Lifetime control for semiconductor devices |
JP2000174325A (en) * | 1998-12-02 | 2000-06-23 | Lucent Technol Inc | Process for adhering crystalline substrate having different crystal lattices |
JP2000252512A (en) * | 1999-02-25 | 2000-09-14 | Siird Center:Kk | Pin photo-diode |
US6593636B1 (en) * | 2000-12-05 | 2003-07-15 | Udt Sensors, Inc. | High speed silicon photodiodes and method of manufacture |
-
2007
- 2007-03-20 US US11/725,661 patent/US20080012087A1/en not_active Abandoned
- 2007-04-18 WO PCT/CA2007/000650 patent/WO2007118330A1/en active Application Filing
- 2007-04-18 EP EP20070719577 patent/EP2013915A4/en not_active Withdrawn
- 2007-04-18 JP JP2009505690A patent/JP5079785B2/en active Active
- 2007-04-18 CA CA2643938A patent/CA2643938C/en active Active
Patent Citations (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4127932A (en) * | 1976-08-06 | 1978-12-05 | Bell Telephone Laboratories, Incorporated | Method of fabricating silicon photodiodes |
US4727649A (en) * | 1983-11-21 | 1988-03-01 | Sumitomo Electric Industries, Ltd. | Method for producing an optical device |
US5021854A (en) * | 1987-12-03 | 1991-06-04 | Xsirius Photonics, Inc. | Silicon avalanche photodiode array |
US5451547A (en) * | 1991-08-26 | 1995-09-19 | Nippondenso Co., Ltd. | Method of manufacturing semiconductor substrate |
US5374564A (en) * | 1991-09-18 | 1994-12-20 | Commissariat A L'energie Atomique | Process for the production of thin semiconductor material films |
US5755914A (en) * | 1992-08-25 | 1998-05-26 | Canon Kabushiki Kaisha | Method for bonding semiconductor substrates |
US5804494A (en) * | 1993-08-20 | 1998-09-08 | Shin-Etsu Handotai Co., Ltd. | Method of fabricating bonded wafer |
US5506153A (en) * | 1993-12-08 | 1996-04-09 | Siemens Aktiengesellschaft | Method for manufacture of a controllable power semiconductor element with buffer zone |
US5596186A (en) * | 1993-12-08 | 1997-01-21 | Nikon Corporation | High sensitivity silicon avalanche photodiode |
US5541122A (en) * | 1995-04-03 | 1996-07-30 | Motorola Inc. | Method of fabricating an insulated-gate bipolar transistor |
US6245161B1 (en) * | 1997-05-12 | 2001-06-12 | Silicon Genesis Corporation | Economical silicon-on-silicon hybrid wafer assembly |
US6136667A (en) * | 1997-10-08 | 2000-10-24 | Lucent Technologies Inc. | Method for bonding two crystalline substrates together |
US6548878B1 (en) * | 1998-02-05 | 2003-04-15 | Integration Associates, Inc. | Method for producing a thin distributed photodiode structure |
US6229162B1 (en) * | 1998-05-08 | 2001-05-08 | Nec Corporation | Planar-type avalanche photodiode |
US7605052B2 (en) * | 1999-06-30 | 2009-10-20 | Intersil Corporation | Method of forming an integrated circuit having a device wafer with a diffused doped backside layer |
US6690078B1 (en) * | 1999-08-05 | 2004-02-10 | Integration Associates, Inc. | Shielded planar dielectrically isolated high speed pin photodiode and method for producing same |
US20010035540A1 (en) * | 2000-04-28 | 2001-11-01 | Fujitsu Limited, Kawasaki, Japan | Photodetector having a mixed crystal layer of SiGeC |
US6492239B2 (en) * | 2000-06-29 | 2002-12-10 | Samsung Electronic Co, Ltd | Method for fabricating avalanche photodiode |
US6525305B2 (en) * | 2000-09-11 | 2003-02-25 | Perkinelmer Canada, Inc. | Large current watchdog circuit for a photodetector |
US6943051B2 (en) * | 2000-10-19 | 2005-09-13 | Quantum Semiconductor Llc | Method of fabricating heterojunction photodiodes integrated with CMOS |
US20030178636A1 (en) * | 2002-02-11 | 2003-09-25 | Jds Uniphase Corporation | Back illuminated photodiodes |
US7192841B2 (en) * | 2002-04-30 | 2007-03-20 | Agency For Science, Technology And Research | Method of wafer/substrate bonding |
US20050253132A1 (en) * | 2002-07-11 | 2005-11-17 | Marshall Gillian F | Photodetector circuits |
US20040087109A1 (en) * | 2002-08-29 | 2004-05-06 | Mccann Paul Damien | Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure |
US7341921B2 (en) * | 2003-05-14 | 2008-03-11 | University College Cork - National University Of Ireland, Cork | Photodiode |
US20050133838A1 (en) * | 2003-12-17 | 2005-06-23 | Samsung Electronics Co., Ltd. | Photodiode and method of manufacturing the same |
US20050205930A1 (en) * | 2004-03-16 | 2005-09-22 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
US7759623B2 (en) * | 2004-05-05 | 2010-07-20 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier |
US7655999B2 (en) * | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
US7863647B1 (en) * | 2007-03-19 | 2011-01-04 | Northrop Grumman Systems Corporation | SiC avalanche photodiode with improved edge termination |
US20100237366A1 (en) * | 2009-03-17 | 2010-09-23 | Kabushiki Kaisha Toshiba | Method for manufacturing light emitting device and light emitting device |
US20120117799A1 (en) * | 2010-11-11 | 2012-05-17 | Dr. Qi Luo | Miniaturized Spring Contact |
US20120293191A1 (en) * | 2011-05-19 | 2012-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | HVMOS Reliability Evaluation using Bulk Resistances as Indices |
Non-Patent Citations (1)
Title |
---|
Lasky "Wafer bonding ro silicon on insulator technologies. Applied Physics letters Number 48 (1) january 6, 1986 pages 78-80. * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130214134A1 (en) * | 2010-11-12 | 2013-08-22 | Kabushiki Kaisha Toshiba | Photon detector |
WO2013009615A1 (en) | 2011-07-08 | 2013-01-17 | Excelitas Technologies LED Solutions, Inc. | Photon counting uv-apd |
US8368159B2 (en) | 2011-07-08 | 2013-02-05 | Excelitas Canada, Inc. | Photon counting UV-APD |
US11081612B2 (en) * | 2015-12-01 | 2021-08-03 | Sharp Kabushiki Kaisha | Avalanche photodiode |
US20230065356A1 (en) * | 2021-08-31 | 2023-03-02 | Brookhaven Science Associates, Llc | Simplified Structure for a Low Gain Avalanche Diode with Closely Spaced Electrodes |
Also Published As
Publication number | Publication date |
---|---|
EP2013915A4 (en) | 2011-08-03 |
WO2007118330A1 (en) | 2007-10-25 |
CA2643938C (en) | 2014-12-09 |
JP2009533882A (en) | 2009-09-17 |
JP5079785B2 (en) | 2012-11-21 |
EP2013915A1 (en) | 2009-01-14 |
CA2643938A1 (en) | 2007-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI262611B (en) | Avalanche photo diode | |
US6838741B2 (en) | Avalanche photodiode for use in harsh environments | |
US7863647B1 (en) | SiC avalanche photodiode with improved edge termination | |
JP2011009749A (en) | Avalanche photodiode | |
US7084471B2 (en) | Photosensitive device | |
US11239382B2 (en) | Semiconductor photomultiplier | |
CA2643938C (en) | Bonded wafer avalanche photodiode and method for manufacturing same | |
EP2355155B1 (en) | Vertical silicon photomultipler with superior quantum efficiency at optical wavelengths | |
JPWO2008090733A1 (en) | Semiconductor photo detector | |
US20060189027A1 (en) | Method of fabricating avalanche photodiode | |
CN113921646A (en) | Single-photon detector, manufacturing method thereof and single-photon detector array | |
JP4154293B2 (en) | Avalanche photodiode, optical module and optical receiver | |
US20120299141A1 (en) | Avalanche photodiode and avalanche photodiode array | |
US20110303949A1 (en) | Semiconductor light-receiving element | |
CN106024922A (en) | Photoelectric transistor based on GeSn materials and manufacturing method thereof | |
US10686093B2 (en) | Semiconductor light receiving element including si avalanche multiplication part and compound semiconductor light receiving layer | |
EP3680941B1 (en) | Avalanche photodiode and method for manufacturing same | |
JPH0513798A (en) | Semiconductor photodetection device | |
TW202038479A (en) | Semiconductor light-receiving element and method of manufacturing semiconductor light-receiving element | |
KR20040032026A (en) | Avalanche Photodiode and Method for Fabricating the Same | |
JP2011176094A (en) | Photodiode | |
KR20050029129A (en) | Radiation hardened visible p-i-n detector | |
Zimmermann et al. | Ultralow-capacitance lateral pin photodiode in a thin c-Si film | |
CN114927582A (en) | Narrow-band near-infrared thermal electron photoelectric detector with completely embedded grating structure | |
JP2006245432A (en) | Photodiode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: PERKINELMER CANADA, INC., CANADA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:DAUTET, HENRI;SEYMOUR, RICHARD;REEL/FRAME:019089/0473 Effective date: 20070313 |
|
AS | Assignment |
Owner name: EXCELITAS CANADA INC., QUEBEC Free format text: MERGER;ASSIGNORS:PERKINELMER CANADA INC.;EXCELITAS CANADA INC.;REEL/FRAME:026686/0545 Effective date: 20101129 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION |