US20070102833A1 - Integrated circuit device - Google Patents
Integrated circuit device Download PDFInfo
- Publication number
- US20070102833A1 US20070102833A1 US11/360,435 US36043506A US2007102833A1 US 20070102833 A1 US20070102833 A1 US 20070102833A1 US 36043506 A US36043506 A US 36043506A US 2007102833 A1 US2007102833 A1 US 2007102833A1
- Authority
- US
- United States
- Prior art keywords
- nanoparticles
- integrated circuit
- thermal expansion
- encapsulating
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 claims abstract description 98
- 239000002105 nanoparticle Substances 0.000 claims abstract description 78
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000008393 encapsulating agent Substances 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 18
- 239000004593 Epoxy Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 5
- 229910008320 ZrMo2 Inorganic materials 0.000 claims description 4
- 229910006254 ZrP2O7 Inorganic materials 0.000 claims description 4
- -1 ZrW2O8 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910003320 CeOx Inorganic materials 0.000 claims description 3
- 229910020669 PbOx Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910000464 lead oxide Inorganic materials 0.000 claims description 3
- 239000002048 multi walled nanotube Substances 0.000 claims description 3
- 239000002121 nanofiber Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 239000002109 single walled nanotube Substances 0.000 claims description 3
- 150000004763 sulfides Chemical class 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000001721 transfer moulding Methods 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 12
- 229910002601 GaN Inorganic materials 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 239000002041 carbon nanotube Substances 0.000 claims 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000009472 formulation Methods 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 230000009969 flowable effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001334 alicyclic compounds Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Definitions
- the present invention relates to encapsulation materials. More particularly, the present invention relates to encapsulation materials that include a plurality of nanoparticles.
- Integrated circuit devices are commonly encapsulated to protect them from environmental hazards such as air, moisture, chemicals, and light, and to provide the integrated circuit with greater physical strength.
- Useful encapsulating materials include ceramics and polymers.
- encapsulating polymers include, for example, epoxies.
- Epoxies can include epoxy resins and thermosetting epoxy resins.
- Integrated circuit devices include, for example semiconductor devices used in various electronic devices and optical devices.
- the semiconductor device can include many integrated circuit materials such as, at least one metal region, i.e., a metal line, bonding pad, and lead frame, at least one doped region, and at least one insulator layer formed on or in a semiconductor substrate.
- the semiconductor substrate is sometimes called a die.
- the semiconductor device includes a heat sink.
- Heat generated during operation can cause the integrated circuit materials to expand and/or contract.
- the amount that each integrated circuit material expands and/or contracts can be described by the coefficient of thermal expansion (“CTE”) of the particular material.
- CTE coefficient of thermal expansion
- Composite materials, comprising one or more particular material can expand and/or contract in volume and/or area as well.
- the expansion of the composite material can be described by the thermal expansion (“TE”) of the composite.
- the CTE's of the particular materials making up the composite can be combined in various ways, depending on the composite material in question, to yield a TE for the composite.
- the TE of the composite can be a weighted average of the CTE's of each particular material in the composite.
- the CTE's of the particular materials making up the composite combine in other ways to yield the TE for the composite.
- an integrated circuit device having a semiconductor device and an encapsulating material on at least a portion of the semiconductor device.
- the encapsulating material includes a plurality of nanoparticles.
- an integrated circuit encapsulating material having an epoxy and a plurality of nanoparticles.
- the plurality of nanoparticles can be dispersed in the epoxy.
- the method includes providing a semiconductor device and contacting the semiconductor device with the encapsulant material.
- the encapsulant material includes a plurality of nanoparticles.
- FIG. 1 depicts an exemplary semiconductor package in accordance with an embodiment of the invention.
- FIG. 2A depicts an exemplary section of an encapsulation material including a plurality of nanoparticles.
- FIG. 2B depicts another exemplary section of an encapsulation material including a plurality of coated nanoparticles.
- an integrated circuit device comprising a semiconductor device.
- the semiconductor device can include many integrated circuit materials such as metals, insulators, and semiconductors.
- Metal regions can be formed in or on a semiconductor substrate to form metal lines, bonding pads, interconnects, and lead frames. Certain metal regions can be used to dissipate heat generated during operation.
- Metals can include, for example, Ti, W, Al, Mo, Pt, Cu, Ag, Ag, and other materials known to one of skill in the art.
- the integrated circuit materials may also include insulator layers. Insulators often form layers on or in a semiconductor substrate. Examples of insulator materials include oxides and nitrides. Additionally, examples of semiconductor substrate materials include silicon, SiGe, GaAs, AlGaAs, SiC, AlnGaP, InP, and other materials that will be well known to practitioners in the art.
- the different materials used in the integrated circuit can be patterned in or on the semiconductor substrate to form useful devices.
- the surface of the semiconductor device may include the semiconductor material, the insulator material, and/or the metal.
- the integrated circuit device is encapsulated in an encapsulating material.
- semiconductor package 100 comprises a semiconductor device 1 encapsulated by an encapsulating material 20 .
- Semiconductor device 1 typically includes input/output pads 2 at an upper surface of semiconductor device 1 .
- a lower surface of semiconductor device 1 is generally bonded to a circuit board 10 by an adhesive 3 .
- Circuit board 10 generally includes a substrate 15 , a circuit pattern 12 , and bond fingers 11 . Those portions of circuit pattern 12 not covered with bond fingers 11 can be coated with cover coat 16 .
- Encapsulating material 20 can include a ceramic material or an epoxy material. Exemplary thicknesses of the encapsulating material can be in the range of 1.0 ⁇ 10 ⁇ 2 mils to 200 mils; 1.0 ⁇ 10 ⁇ 2 mils to 1.0 mil; and 1 mil to 200 mils. Encapsulating material 20 can contact all, or portions of, semiconductor device 1 . Encapsulating material can also encapsulate leads 4 , circuit pattern 12 , bond fingers 11 , and cover coat 16 . In certain embodiments, the leads contacting the semiconductor device may not be encapsulated.
- the encapsulation material can be any resin that can be cured to form a protective layer over the semiconductor device.
- Suitable resins include phenolic resins, alkyds, diallyl phthalate resins, polycyanate resins, epoxy resins and the like.
- suitable epoxy resins are those based on bisphenols such as bisphenol A; those based on biphenyl; phenol epoxy novolac resins; cresol epoxy novolac resins; those based on trisphenol methane derivatives; those based on cyclohexane or other alicyclic compounds; and the like.
- Bromine-substituted epoxy resins may be used to impart flame retardance to the cured resin.
- the resin can also be selected together with a curing agent and other additives such that upon curing it exhibits a glass transition temperature and heat distortion temperature.
- Suitable epoxy formulations are described, for example, in U.S. Pat. No. 5,232,970 to Solc et al., issued Aug. 3, 1993, incorporated in its entirety herein by reference.
- epoxy resins may include for example:
- the encapsulation material may further comprise a plurality of nanoparticles.
- the nanoparticles have a coefficient of thermal expansion, positive or negative.
- the nanoparticles can have a coefficient of thermal expansion similar to that of the bulk material that make-up the nanoparticles. Nanoparticles are added to the encapsulation material to adjust TE EM .
- Exemplary nanoparticle materials having, a positive TE include single elements, such as the Group IV elements, metals or the rare earth elements.
- Other nanoparticle materials having a positive TE include nitrides, oxides, phosphides, carbides, sulfides, or selenides, or combinations thereof.
- the nanoparticle materials can be metal oxides including titanium dioxide (TiO 2 ), magnesium oxide (MgO), yttria (YtO), zircronia (ZrO 2 ), CeO x , alumina (Al 2 O 3 ), lead oxide (PbO x ), silica, SiO 2 , SiON, or composites of these oxides.
- the materials can be made from III-V compounds or II-VI compounds.
- the nanoparticle materials can also include zinc selenide (ZnSe), zinc sulfide (ZnS), and alloys made from Zn, Se, S, Si, Fe, C, B, BN, and Te.
- the nanoparticle materials can be gallium nitride (GaN), AlGaN, silicon nitride (Si 3 N 4 ), SiN, or aluminum nitride.
- the material of the nanoparticles can also be metallic elements, such as, for example, Ag, Al, Au, Co, Cu, Fe, Mo, Ni, and W, and alloys thereof.
- the material of the nanoparticles can also be non-metallic elements. Exemplary non-metallic elements include, for example, Si and C, in any of their various forms (e.g., diamond, graphite, nanofibers, and single and multi-walled nanotubes). Other types of nanotubes can also be used.
- the resulting composite material may include little or no expansion or contraction even when cycled through various thermal environments.
- the TE of the resulting composite material can be controlled to an extent by the doping level of the nanocomposite within the matrix material.
- the TE of the materials making up the nanoparticles is less than TE EM .
- TE EM can be adjusted to closely match TE SD .
- the nanoparticles reduce or eliminate stress and other detrimental effects of TE mismatch.
- the nanoparticles can also be dispersed throughout the encapsulation material so that the TE EM is globally affected, making the TE EM uniform throughout. Further, because of the small size of the nanoparticles, stress does not arise within the encapsulation material.
- TE EM can be adjusted to be within 20%, 10%, 5%, 1%, or less than 1% of TE SD .
- the nanoparticles used in the embodiments described herein can be substantially spherical.
- the shape of the nanoparticles can be non-spherical.
- the shape of the nanoparticles can be faceted or they can assume geometrical shapes such as cubes, pyramids, triangles, trapezoids, parallelograms, hexagons, tubes, or they can have no defined shape.
- the nanoparticles used in the embodiments described herein do not need to have the same shape.
- the nanoparticles used in the embodiments described herein can be of various sizes.
- the average size of the nanoparticles can be less than about each of the following: 90 nm, 75 nm, 50 nm, 25 nm, 15 nm, 10 nm, 5 nm, 2 nm, 1 nm, or less than 1 nm.
- nanoparticles are included into the material making up the encapsulation material at a wt % of less than 50 wt % of the composites described herein.
- nanoparticles are included into the materials making up the encapsulation material at a wt % of less than 70 wt % of the composites described herein.
- the nanoparticles are not in physical contact with each other in a host material and are prevented from agglomerating. Agglomeration is understood to be when two or more nanoparticles come into physical contact. When any of the nanoparticles are in physical contact with another nanoparticle, the two or more nanoparticles essentially become a single nanoparticle having a size of the combined two or more nanoparticles.
- FIG. 2A shows an exemplary section 200 of an encapsulation material 220 .
- encapsulation material 220 includes a plurality of nanoparticles 225 .
- nanoparticles 225 are separated by encapsulation material 220 .
- the nanoparticles are prevented from agglomerating by coating the nanoparticles with a coating.
- FIG. 2B there is an exemplary section 200 of encapsulation material 220 .
- the encapsulation material 220 includes a plurality of nanoparticles 225 coated with a coating 230 .
- the coating prevents the nanoparticles from agglomerating or flocking together.
- the anti-agglomeration coating is a surfactant organic coating.
- the anti-agglomurant can be any other known organic coating with anti-agglomurant properties.
- the integrated circuit device may be encapsulated by a resin transfer molding process.
- a powder or palletized, normally solid uncured resin formulation is heated to a temperature at which it will flow under pressure, and then transferred under pressure to a mold cavity which contains the integrated circuit device.
- Powders or pellets may contain the nanoparticles or the nanoparticles may be combined with the powder or pellets with heating.
- An alternative method is to inject a liquid resin formulation into a mold via an autodispensing process.
- the resin, curing agent, nanoparticles and other components are formulated so as to be flowable at room temperature (about 25 degrees C.).
- This flowable mixture is then injected into a mold cavity containing the integrated circuit device, where it is cured via the application of heat.
- the resin formulation can be prepared and frozen in a syringe. While frozen, the resin does not cure. This enables the resin to be transported and thawed at the time of use.
- thermosetting resin formulations may also be used, such as the “Blop-Top” encapsulants and other liquid epoxy systems as are used as underfills in flip chip bonding. These resin formulations, when filled with nanoparticles can also be used as die attach adhesives.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
An integrated circuit device having a semiconductor device and an encapsulating material on at least a portion of the semiconductor device and a method for encapsulating an integrated circuit device is disclosed. The encapsulating material includes a plurality of nanoparticles.
Description
- The present invention relates to encapsulation materials. More particularly, the present invention relates to encapsulation materials that include a plurality of nanoparticles.
- Integrated circuit devices are commonly encapsulated to protect them from environmental hazards such as air, moisture, chemicals, and light, and to provide the integrated circuit with greater physical strength. Useful encapsulating materials include ceramics and polymers. Generally, encapsulating polymers include, for example, epoxies. Epoxies can include epoxy resins and thermosetting epoxy resins.
- Integrated circuit devices include, for example semiconductor devices used in various electronic devices and optical devices. The semiconductor device can include many integrated circuit materials such as, at least one metal region, i.e., a metal line, bonding pad, and lead frame, at least one doped region, and at least one insulator layer formed on or in a semiconductor substrate. The semiconductor substrate is sometimes called a die. Often, the semiconductor device includes a heat sink.
- Heat generated during operation can cause the integrated circuit materials to expand and/or contract. The amount that each integrated circuit material expands and/or contracts can be described by the coefficient of thermal expansion (“CTE”) of the particular material. And different materials have different CTE's. Composite materials, comprising one or more particular material, can expand and/or contract in volume and/or area as well. The expansion of the composite material can be described by the thermal expansion (“TE”) of the composite. The CTE's of the particular materials making up the composite can be combined in various ways, depending on the composite material in question, to yield a TE for the composite. For example, in some instances the TE of the composite can be a weighted average of the CTE's of each particular material in the composite. However, in other instances the CTE's of the particular materials making up the composite combine in other ways to yield the TE for the composite.
- Problems often arise in integrated circuit devices, however, when the TE of materials making up the integrated circuit differ. One problem occurs at the interface of the semiconductor device and the encapsulating material. In particular, the thermal expansion of the semiconductor device (“TDSD”) and the thermal expansion of the encapsulating material (“TDEM”) are not the same. As a result, these materials expand to different extents during operation and this can cause stress at the interface of these two materials. This stress often leads to cracking of the encapsulating material.
- Accordingly, it would be useful to be able to match the TESD to the TEEM to prevent stress and reduce the negative effects of the stress.
- In an embodiment of the invention, there is an integrated circuit device having a semiconductor device and an encapsulating material on at least a portion of the semiconductor device. The encapsulating material includes a plurality of nanoparticles.
- In another embodiment of the invention, there is an integrated circuit encapsulating material having an epoxy and a plurality of nanoparticles. The plurality of nanoparticles can be dispersed in the epoxy.
- In another embodiment of the invention, there is a method of encapsulating an integrated circuit device. The method includes providing a semiconductor device and contacting the semiconductor device with the encapsulant material. In this embodiment, the encapsulant material includes a plurality of nanoparticles.
- Additional objects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
- The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate several embodiments of the invention and together with the description, serve to explain the principles of the invention.
-
FIG. 1 depicts an exemplary semiconductor package in accordance with an embodiment of the invention. -
FIG. 2A depicts an exemplary section of an encapsulation material including a plurality of nanoparticles. -
FIG. 2B depicts another exemplary section of an encapsulation material including a plurality of coated nanoparticles. - Reference will now be made in detail to the present embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.
- In an embodiment of the invention, there is an integrated circuit device comprising a semiconductor device. The semiconductor device can include many integrated circuit materials such as metals, insulators, and semiconductors. Metal regions can be formed in or on a semiconductor substrate to form metal lines, bonding pads, interconnects, and lead frames. Certain metal regions can be used to dissipate heat generated during operation. Metals can include, for example, Ti, W, Al, Mo, Pt, Cu, Ag, Ag, and other materials known to one of skill in the art.
- As mentioned, the integrated circuit materials may also include insulator layers. Insulators often form layers on or in a semiconductor substrate. Examples of insulator materials include oxides and nitrides. Additionally, examples of semiconductor substrate materials include silicon, SiGe, GaAs, AlGaAs, SiC, AlnGaP, InP, and other materials that will be well known to practitioners in the art.
- The different materials used in the integrated circuit can be patterned in or on the semiconductor substrate to form useful devices. The surface of the semiconductor device may include the semiconductor material, the insulator material, and/or the metal.
- In an embodiment of the invention, the integrated circuit device is encapsulated in an encapsulating material. As shown in
FIG. 1 ,semiconductor package 100 comprises asemiconductor device 1 encapsulated by anencapsulating material 20.Semiconductor device 1 typically includes input/output pads 2 at an upper surface ofsemiconductor device 1. A lower surface ofsemiconductor device 1 is generally bonded to acircuit board 10 by an adhesive 3.Circuit board 10 generally includes asubstrate 15, acircuit pattern 12, andbond fingers 11. Those portions ofcircuit pattern 12 not covered withbond fingers 11 can be coated withcover coat 16. -
Encapsulating material 20 can include a ceramic material or an epoxy material. Exemplary thicknesses of the encapsulating material can be in the range of 1.0×10−2 mils to 200 mils; 1.0×10−2 mils to 1.0 mil; and 1 mil to 200 mils. Encapsulatingmaterial 20 can contact all, or portions of,semiconductor device 1. Encapsulating material can also encapsulateleads 4,circuit pattern 12,bond fingers 11, and covercoat 16. In certain embodiments, the leads contacting the semiconductor device may not be encapsulated. - The encapsulation material can be any resin that can be cured to form a protective layer over the semiconductor device. Suitable resins include phenolic resins, alkyds, diallyl phthalate resins, polycyanate resins, epoxy resins and the like. Among the suitable epoxy resins are those based on bisphenols such as bisphenol A; those based on biphenyl; phenol epoxy novolac resins; cresol epoxy novolac resins; those based on trisphenol methane derivatives; those based on cyclohexane or other alicyclic compounds; and the like. Bromine-substituted epoxy resins may be used to impart flame retardance to the cured resin. The resin can also be selected together with a curing agent and other additives such that upon curing it exhibits a glass transition temperature and heat distortion temperature. Suitable epoxy formulations are described, for example, in U.S. Pat. No. 5,232,970 to Solc et al., issued Aug. 3, 1993, incorporated in its entirety herein by reference.
- Other epoxy resins may include for example:
- (a) EOCN1020-55, an o-cresol novolac epoxy resin produced by Nippon Kayaku Co., Ltd. (epoxy equivalent, 200)
- (b) YX40000HK, a biphenyl epoxy resin produced by Yuka Shell Epoxy (epoxy equivalent, 190)
- (c) NC-3000P, an epoxy resin of formula (1) produced by Nippon Kayaku Co., Ltd. (epoxy equivalent, 272)
- Curing Agents:
- (d) DL-92, a phenolic novolac resin produced by Meiwa Kasei Industries, Ltd. (phenolic hydroxy equivalent, 110)
- (e) MEH-7800SS, a phenolic aralkyl resin produced by Meiwa Kasei Industries, Ltd. (phenolic hydroxy equivalent, 175)
- (f) MEH-7851L, a phenolic resin of formula (2) produced by Meiwa Kasei Industries, Ltd. (phenolic hydroxy equivalent, 199).
- In an embodiment of the present invention, the encapsulation material may further comprise a plurality of nanoparticles. The nanoparticles have a coefficient of thermal expansion, positive or negative. In various embodiments, the nanoparticles can have a coefficient of thermal expansion similar to that of the bulk material that make-up the nanoparticles. Nanoparticles are added to the encapsulation material to adjust TEEM.
- Exemplary nanoparticle materials having, a positive TE include single elements, such as the Group IV elements, metals or the rare earth elements. Other nanoparticle materials having a positive TE include nitrides, oxides, phosphides, carbides, sulfides, or selenides, or combinations thereof. In certain embodiments, the nanoparticle materials can be metal oxides including titanium dioxide (TiO2), magnesium oxide (MgO), yttria (YtO), zircronia (ZrO2), CeOx, alumina (Al2O3), lead oxide (PbOx), silica, SiO2, SiON, or composites of these oxides. In other embodiments, the materials can be made from III-V compounds or II-VI compounds. The nanoparticle materials can also include zinc selenide (ZnSe), zinc sulfide (ZnS), and alloys made from Zn, Se, S, Si, Fe, C, B, BN, and Te. Further, the nanoparticle materials can be gallium nitride (GaN), AlGaN, silicon nitride (Si3N4), SiN, or aluminum nitride. The material of the nanoparticles can also be metallic elements, such as, for example, Ag, Al, Au, Co, Cu, Fe, Mo, Ni, and W, and alloys thereof. The material of the nanoparticles can also be non-metallic elements. Exemplary non-metallic elements include, for example, Si and C, in any of their various forms (e.g., diamond, graphite, nanofibers, and single and multi-walled nanotubes). Other types of nanotubes can also be used.
- Exemplary nanoparticle materials having a negative TE include, for example, Ni—Ti alloys, ZrW2O8, ZrMo2O8, Y(WO4)3, V doped ZrP2O7, ZrV2O7, ZnW, NaTi2, (Zr2O)(PO4)2, Th4(PO4)4P2O7, and AOMO4, where A=Nb or Ta, and M=P, As, or V. When nanoparticles having a negative TE are combined with a matrix material having a positive TE, the resulting composite material may include little or no expansion or contraction even when cycled through various thermal environments. The TE of the resulting composite material can be controlled to an extent by the doping level of the nanocomposite within the matrix material.
- In certain embodiments of the present invention, the TE of the materials making up the nanoparticles is less than TEEM. Combining the nanoparticles with the encapsulation material, which can form a composite, reduces the overall TE of the composite. Additionally, by adding various amounts of nanoparticles having a negative TE and/or adding various amounts of nanoparticles having a positive TE to the encapsulation material, TEEM can be adjusted to closely match TESD. The nanoparticles reduce or eliminate stress and other detrimental effects of TE mismatch.
- The nanoparticles can also be dispersed throughout the encapsulation material so that the TEEM is globally affected, making the TEEM uniform throughout. Further, because of the small size of the nanoparticles, stress does not arise within the encapsulation material. In an embodiment of the invention, TEEM can be adjusted to be within 20%, 10%, 5%, 1%, or less than 1% of TESD.
- The nanoparticles used in the embodiments described herein can be substantially spherical. Alternatively, the shape of the nanoparticles can be non-spherical. For example, the shape of the nanoparticles can be faceted or they can assume geometrical shapes such as cubes, pyramids, triangles, trapezoids, parallelograms, hexagons, tubes, or they can have no defined shape. Moreover, the nanoparticles used in the embodiments described herein do not need to have the same shape.
- The nanoparticles used in the embodiments described herein can be of various sizes. For example, the average size of the nanoparticles can be less than about each of the following: 90 nm, 75 nm, 50 nm, 25 nm, 15 nm, 10 nm, 5 nm, 2 nm, 1 nm, or less than 1 nm.
- In certain embodiments, nanoparticles are included into the material making up the encapsulation material at a wt % of less than 50 wt % of the composites described herein. Alternatively, nanoparticles are included into the materials making up the encapsulation material at a wt % of less than 70 wt % of the composites described herein.
- In some embodiments, the nanoparticles are not in physical contact with each other in a host material and are prevented from agglomerating. Agglomeration is understood to be when two or more nanoparticles come into physical contact. When any of the nanoparticles are in physical contact with another nanoparticle, the two or more nanoparticles essentially become a single nanoparticle having a size of the combined two or more nanoparticles.
- In certain embodiments, the nanoparticles are separated from each other by the host material. For example,
FIG. 2A shows anexemplary section 200 of anencapsulation material 220. As seen inFIG. 2A ,encapsulation material 220 includes a plurality ofnanoparticles 225. In theexemplary section 200,nanoparticles 225 are separated byencapsulation material 220. - In other embodiments, the nanoparticles are prevented from agglomerating by coating the nanoparticles with a coating. As shown in
FIG. 2B , there is anexemplary section 200 ofencapsulation material 220. As seen inFIG. 2B theencapsulation material 220 includes a plurality ofnanoparticles 225 coated with acoating 230. The coating prevents the nanoparticles from agglomerating or flocking together. In an embodiment, the anti-agglomeration coating is a surfactant organic coating. Alternatively, the anti-agglomurant can be any other known organic coating with anti-agglomurant properties. - The integrated circuit device may be encapsulated by a resin transfer molding process. In this process, a powder or palletized, normally solid uncured resin formulation is heated to a temperature at which it will flow under pressure, and then transferred under pressure to a mold cavity which contains the integrated circuit device. Powders or pellets may contain the nanoparticles or the nanoparticles may be combined with the powder or pellets with heating.
- An alternative method is to inject a liquid resin formulation into a mold via an autodispensing process. In this process, the resin, curing agent, nanoparticles and other components are formulated so as to be flowable at room temperature (about 25 degrees C.). This flowable mixture is then injected into a mold cavity containing the integrated circuit device, where it is cured via the application of heat. In this method, the resin formulation can be prepared and frozen in a syringe. While frozen, the resin does not cure. This enables the resin to be transported and thawed at the time of use.
- Other liquid thermosetting resin formulations may also be used, such as the “Blop-Top” encapsulants and other liquid epoxy systems as are used as underfills in flip chip bonding. These resin formulations, when filled with nanoparticles can also be used as die attach adhesives.
- Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Claims (23)
1-23. (canceled)
24. A method of encapsulating an integrated circuit device comprising:
providing a semiconductor device;
contacting at least a portion of the semiconductor device with an encapsulant material, the encapsulant material comprising a plurality of nanoparticles, wherein the plurality of nanoparticles comprise a material selected from at least one of materials having a positive coefficient of thermal expansion and materials having a negative coefficient of thermal expansion, and wherein the content of nanoparticles in the encapsulant material is between about 1×10−4 and 5×101 parts per weight.
25. The method of encapsulating an integrated circuit device according to claim 24 , wherein the plurality of nanoparticles are selected from oxides, nitrides, and sulfides.
26. The method of encapsulating an integrated circuit device according to claim 1, wherein the plurality of nanoparticles are coated with an antiagglomuant.
27. The method of encapsulating an integrated circuit device according to claim 24 further comprising:
adjusting the coefficient of thermal expansion of the encapsulant material to be within ±20% of the coefficient of thermal expansion of the semiconductor device by controlling the amount of nanoparticles in the encapsulant material.
28. The method of encapsulating an integrated circuit device according to claim 24 , wherein the plurality of nanoparticles have a mean diameter from about 1 nm to about 90 nm.
29. The method of encapsulating an integrated circuit device according to claim 24 , wherein the encapsulant material is selected from at least one of a ceramic and an epoxy.
30. The method of encapsulating an integrated circuit device according to claim 24 , wherein the plurality of nanoparticles are selected from a material comprising at least one of Ni—Ti alloys, ZrW2O8, ZrMo2O8, Y(WO4)3, V doped ZrP2O7, ZrV2O7, ZnW, NaTi2, (Zr2O)(PO4)2, Th4(PO4)4P2O7, and AOMO4, where A=Nb or Ta, and M=P, As, or V.
31. The method of encapsulating an integrated circuit device according to claim 24 , wherein the plurality of nanoparticles are selected from a material comprising at least one of Zn, Se, Si, S, Fe, B, C, Ag, Al, Au, Co, Mo, Ni, W, Te, BN, titanium dioxide (TiO2), magnesium oxide (MgO), yttria (YtO), zirconia (ZrO2), silicon oxide (SiOx), CeOx, alumina (Al2O3), lead oxide (PbOx), carbon nanotubes, a composite of yttria and zirconia, gallium nitride (GaN), silicon nitride, aluminum nitride, zinc selenide (ZnSe), zinc sulfide (ZnS), nanofibers, single and multi-walled nanotubes, III-V compounds, II-VI compounds, GaN, AlGaN, silicon nitride (Si3N4), SiN, aluminum nitride, and the rare earth elements.
32. The method of encapsulating an integrated circuit device according to claim 24 , wherein the portion of the semiconductor device is contacted with the encapsulant using at least one of a resin transfer molding process and a liquid resin injection process.
33. The method of encapsulating an integrated circuit device according to claim 27 , wherein the anti-agglomuration coating is an organic coating.
34. A method of fabricating an integrated circuit device, the method comprising:
providing a semiconductor device;
contacting at least a portion of the semiconductor device with an encapsulant material, the encapsulant material comprising a plurality of nanoparticles having a negative coefficient of thermal expansion, wherein content of the nanoparticles in the encapsulant material is 70 wt % or less.
35. The method of fabricating an integrated circuit device according to claim 34 , wherein the plurality of nanoparticles are selected from at least one of Ni—Ti alloys, ZrW2O8 ZrMo2O8, Y(WO4)3, V doped ZrP2O7, ZrV2O7, ZnW, NaTi2, (Zr2O)(PO4)2, Th4(PO4)4P2O7, and AOMO4, where A=Nb or Ta, and M=P, As, or V.
36. The method of encapsulating an integrated circuit device according to claim 34 , wherein the plurality of nanoparticles are coated with an anti-agglomurant.
37. The method of encapsulating an integrated circuit device according to claim 34 further comprising:
adjusting the coefficient of thermal expansion of the encapsulant material to be within ±20% of the coefficient of thermal expansion of the semiconductor device by controlling the amount of nanoparticles in the encapsulant material.
38. The method of encapsulating an integrated circuit device according to claim 34 , wherein the plurality of nanoparticles have a mean diameter from about 1 nm to about 90 nm.
39. The method of encapsulating an integrated circuit device according to claim 34 , wherein the encapsulant material is selected from at least one of a ceramic and an epoxy.
40. A method of controlling the thermal expansion of an encapsulated device, the method comprising:
providing a device to be encapsulated;
contacting at least a portion of the semiconductor device with an encapsulant material, the encapsulant material comprising a plurality of nanoparticles, wherein the plurality of nanoparticles comprise a material selected from at least one of materials having a positive coefficient of thermal expansion and materials having a negative coefficient of thermal expansion, and wherein the content of nanoparticles in the encapsulant material is between about 1×10−4 and 5×101 parts per weight.
41. The method of controlling the thermal expansion of an encapsulated device according claim 40 , wherein the plurality of nanoparticles are selected from oxides, nitrides, and sulfides.
42. The method of controlling the thermal expansion of an encapsulated device according to claim 40 , wherein the plurality of nanoparticles are coated with an anti-agglomurant.
43. The method of controlling the thermal expansion of an encapsulated device according to claim 40 further comprising:
adjusting the coefficient of thermal expansion of the encapsulant material to be within ±20% of the coefficient of thermal expansion of the semiconductor device by controlling the amount of nanoparticles in the encapsulant material.
44. The method of controlling the thermal expansion of an encapsulated device according to claim 40 , wherein the plurality of nanoparticles are selected from a material comprising at least one of Ni—Ti alloys, ZrW2O8, ZrMo2O8, Y(WO4)3, V doped ZrP2O7, ZrV2O7, ZnW, NaTi2, (Zr2O)(PO4)2, Th4(PO4)4P2O7, and AOMO4, where A=Nb or Ta, and M=P, As, or V.
45. The method of controlling the thermal expansion of an encapsulated device according to claim 40 , wherein the plurality of nanoparticles are selected from a material comprising at least one of Zn, Se, Si, S, Fe, B, C, Ag, Al, Au, Co, Mo, Ni, W, Te, BN, titanium dioxide (TiO2), magnesium oxide (MgO), yttria (YtO), zirconia (ZrO2), silicon oxide (SiOx), CeOx, alumina (Al2O3), lead oxide (PbOx), carbon nanotubes, a composite of yttria and zirconia, gallium nitride (GaN), silicon nitride, aluminum nitride, zinc selenide (ZnSe), zinc sulfide (ZnS), nanofibers, single and multi-walled nanotubes, III-V compounds, II-VI compounds, GaN, AlGaN, silicon nitride (Si3N4), SiN, aluminum nitride, and the rare earth elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/360,435 US20070102833A1 (en) | 2004-06-04 | 2006-02-24 | Integrated circuit device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/860,316 US7109591B2 (en) | 2004-06-04 | 2004-06-04 | Integrated circuit device |
US11/360,435 US20070102833A1 (en) | 2004-06-04 | 2006-02-24 | Integrated circuit device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/860,316 Division US7109591B2 (en) | 2004-06-04 | 2004-06-04 | Integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070102833A1 true US20070102833A1 (en) | 2007-05-10 |
Family
ID=35446797
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/860,316 Expired - Fee Related US7109591B2 (en) | 2004-06-04 | 2004-06-04 | Integrated circuit device |
US11/360,435 Abandoned US20070102833A1 (en) | 2004-06-04 | 2006-02-24 | Integrated circuit device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/860,316 Expired - Fee Related US7109591B2 (en) | 2004-06-04 | 2004-06-04 | Integrated circuit device |
Country Status (1)
Country | Link |
---|---|
US (2) | US7109591B2 (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080050512A1 (en) * | 2006-08-23 | 2008-02-28 | Rockwell Collins, Inc. | Integrated circuit tampering protection and reverse engineering prvention coatings and methods |
US20080299300A1 (en) * | 2006-08-23 | 2008-12-04 | Wilcoxon Ross K | Method for providing near-hermetically coated, thermally protected integrated circuit assemblies |
US20090068474A1 (en) * | 2006-08-23 | 2009-03-12 | Rockwell Collins, Inc. | Alkali silicate glass based coating and method for applying |
US20090262290A1 (en) * | 2007-12-18 | 2009-10-22 | Rockwell Collins, Inc. | Alkali silicate glass for displays |
US20090279257A1 (en) * | 2008-05-06 | 2009-11-12 | Rockwell Collins, Inc. | System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling |
US20100065256A1 (en) * | 2008-09-12 | 2010-03-18 | Wilcoxon Ross K | Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid |
US20100064695A1 (en) * | 2008-09-12 | 2010-03-18 | Wilcoxon Ross K | Flexible flow channel for a modular liquid-cooled thermal spreader |
US20100064518A1 (en) * | 2008-09-12 | 2010-03-18 | Lower Nathan P | Fabrication process for a flexible, thin thermal spreader |
US20100078806A1 (en) * | 2008-09-30 | 2010-04-01 | Nirupama Chakrapani | Microelectronic package with wear resistant coating |
US20100078605A1 (en) * | 2008-09-29 | 2010-04-01 | Lower Nathan P | Glass thick film embedded passive material |
US8076185B1 (en) * | 2006-08-23 | 2011-12-13 | Rockwell Collins, Inc. | Integrated circuit protection and ruggedization coatings and methods |
US8581108B1 (en) | 2006-08-23 | 2013-11-12 | Rockwell Collins, Inc. | Method for providing near-hermetically coated integrated circuit assemblies |
US8637980B1 (en) | 2007-12-18 | 2014-01-28 | Rockwell Collins, Inc. | Adhesive applications using alkali silicate glass for electronics |
US8900703B1 (en) * | 2007-07-02 | 2014-12-02 | Rockwell Collins, Inc. | Nanotechnology for protection of proprietary hardware and software |
CN104292749A (en) * | 2013-07-19 | 2015-01-21 | 味之素株式会社 | Resin composition |
US9197024B1 (en) | 2006-08-23 | 2015-11-24 | Rockwell Collins, Inc. | Method of reinforcing a hermetic seal of a module |
US9435915B1 (en) | 2012-09-28 | 2016-09-06 | Rockwell Collins, Inc. | Antiglare treatment for glass |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005089660A (en) * | 2003-09-18 | 2005-04-07 | Nitto Denko Corp | Resin composition for semiconductor sealing |
DE10345157B4 (en) * | 2003-09-29 | 2009-01-08 | Qimonda Ag | Thermally conductive packaging of electronic circuit units |
DE102004048201B4 (en) * | 2004-09-30 | 2009-05-20 | Infineon Technologies Ag | Semiconductor component with a bonding agent layer, and method for its production |
TWI393226B (en) * | 2004-11-04 | 2013-04-11 | Taiwan Semiconductor Mfg | Nanotube-based filler |
US7712213B2 (en) * | 2005-12-02 | 2010-05-11 | Aai Corporation | Angular encapsulation of tandem stacked printed circuit boards |
US20070135550A1 (en) * | 2005-12-14 | 2007-06-14 | Nirupama Chakrapani | Negative thermal expansion material filler for low CTE composites |
US20080099331A1 (en) * | 2006-01-12 | 2008-05-01 | Chung Yuan Christian University | Solid-state urea biosensor and its data acquisition system |
US8841782B2 (en) * | 2008-08-14 | 2014-09-23 | Stats Chippac Ltd. | Integrated circuit package system with mold gate |
CN101894810A (en) * | 2009-05-21 | 2010-11-24 | 台湾积体电路制造股份有限公司 | Composite underfill, semiconductor package and its forming method |
US20100295173A1 (en) * | 2009-05-21 | 2010-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite Underfill and Semiconductor Package |
JP5419226B2 (en) * | 2010-07-29 | 2014-02-19 | 日東電工株式会社 | Flip chip type film for semiconductor back surface and use thereof |
CN103982868B (en) * | 2014-04-30 | 2018-09-07 | 合肥京东方显示光源有限公司 | One kind is from buffer element and preparation method thereof, backlight module, display device |
US11031364B2 (en) | 2018-03-07 | 2021-06-08 | Texas Instruments Incorporated | Nanoparticle backside die adhesion layer |
US11270921B2 (en) * | 2020-01-30 | 2022-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package including dies having high-modulus dielectric layer and manufacturing method thereof |
CN113185223B (en) * | 2021-04-29 | 2022-06-28 | 长沙市神宇建材有限公司 | Special nano expansion joint filling mortar for doors and windows and preparation method thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5627107A (en) * | 1992-06-08 | 1997-05-06 | The Dow Chemical Company | Semiconductor devices encapsulated with aluminum nitride-filled resins and process for preparing same |
US5777433A (en) * | 1996-07-11 | 1998-07-07 | Hewlett-Packard Company | High refractive index package material and a light emitting device encapsulated with such material |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
US6507122B2 (en) * | 1999-08-09 | 2003-01-14 | International Business Machines Corporation | Pre-bond encapsulation of area array terminated chip and wafer scale packages |
US6518332B2 (en) * | 1998-04-27 | 2003-02-11 | Shin-Etsu Chemical Co., Ltd. | Semiconductor encapsulating epoxy resin compositions, and semiconductor devices encapsulated therewith |
US20040150268A1 (en) * | 2002-01-30 | 2004-08-05 | Garito Anthony F. | Nanocomposite microresonators |
US20050110168A1 (en) * | 2003-11-20 | 2005-05-26 | Texas Instruments Incorporated | Low coefficient of thermal expansion (CTE) semiconductor packaging materials |
-
2004
- 2004-06-04 US US10/860,316 patent/US7109591B2/en not_active Expired - Fee Related
-
2006
- 2006-02-24 US US11/360,435 patent/US20070102833A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5627107A (en) * | 1992-06-08 | 1997-05-06 | The Dow Chemical Company | Semiconductor devices encapsulated with aluminum nitride-filled resins and process for preparing same |
US5777433A (en) * | 1996-07-11 | 1998-07-07 | Hewlett-Packard Company | High refractive index package material and a light emitting device encapsulated with such material |
US6518332B2 (en) * | 1998-04-27 | 2003-02-11 | Shin-Etsu Chemical Co., Ltd. | Semiconductor encapsulating epoxy resin compositions, and semiconductor devices encapsulated therewith |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
US6507122B2 (en) * | 1999-08-09 | 2003-01-14 | International Business Machines Corporation | Pre-bond encapsulation of area array terminated chip and wafer scale packages |
US20040150268A1 (en) * | 2002-01-30 | 2004-08-05 | Garito Anthony F. | Nanocomposite microresonators |
US20050110168A1 (en) * | 2003-11-20 | 2005-05-26 | Texas Instruments Incorporated | Low coefficient of thermal expansion (CTE) semiconductor packaging materials |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8166645B2 (en) | 2006-08-23 | 2012-05-01 | Rockwell Collins, Inc. | Method for providing near-hermetically coated, thermally protected integrated circuit assemblies |
US8935848B1 (en) | 2006-08-23 | 2015-01-20 | Rockwell Collins, Inc. | Method for providing near-hermetically coated integrated circuit assemblies |
US20090068474A1 (en) * | 2006-08-23 | 2009-03-12 | Rockwell Collins, Inc. | Alkali silicate glass based coating and method for applying |
US20090246355A9 (en) * | 2006-08-23 | 2009-10-01 | Rockwell Collins, Inc. | Integrated circuit tampering protection and reverse engineering prevention coatings and methods |
US20080050512A1 (en) * | 2006-08-23 | 2008-02-28 | Rockwell Collins, Inc. | Integrated circuit tampering protection and reverse engineering prvention coatings and methods |
US9196555B1 (en) | 2006-08-23 | 2015-11-24 | Rockwell Collins, Inc. | Integrated circuit protection and ruggedization coatings and methods |
US9565758B2 (en) | 2006-08-23 | 2017-02-07 | Rockwell Collins, Inc. | Alkali silicate glass based coating and method for applying |
US8617913B2 (en) | 2006-08-23 | 2013-12-31 | Rockwell Collins, Inc. | Alkali silicate glass based coating and method for applying |
US8581108B1 (en) | 2006-08-23 | 2013-11-12 | Rockwell Collins, Inc. | Method for providing near-hermetically coated integrated circuit assemblies |
US20080299300A1 (en) * | 2006-08-23 | 2008-12-04 | Wilcoxon Ross K | Method for providing near-hermetically coated, thermally protected integrated circuit assemblies |
US9197024B1 (en) | 2006-08-23 | 2015-11-24 | Rockwell Collins, Inc. | Method of reinforcing a hermetic seal of a module |
US8664047B2 (en) | 2006-08-23 | 2014-03-04 | Rockwell Collins, Inc. | Integrated circuit tampering protection and reverse engineering prevention coatings and methods |
US8076185B1 (en) * | 2006-08-23 | 2011-12-13 | Rockwell Collins, Inc. | Integrated circuit protection and ruggedization coatings and methods |
US8084855B2 (en) * | 2006-08-23 | 2011-12-27 | Rockwell Collins, Inc. | Integrated circuit tampering protection and reverse engineering prevention coatings and methods |
US8900703B1 (en) * | 2007-07-02 | 2014-12-02 | Rockwell Collins, Inc. | Nanotechnology for protection of proprietary hardware and software |
US8637980B1 (en) | 2007-12-18 | 2014-01-28 | Rockwell Collins, Inc. | Adhesive applications using alkali silicate glass for electronics |
US8363189B2 (en) | 2007-12-18 | 2013-01-29 | Rockwell Collins, Inc. | Alkali silicate glass for displays |
US20090262290A1 (en) * | 2007-12-18 | 2009-10-22 | Rockwell Collins, Inc. | Alkali silicate glass for displays |
US8174830B2 (en) | 2008-05-06 | 2012-05-08 | Rockwell Collins, Inc. | System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling |
US20090279257A1 (en) * | 2008-05-06 | 2009-11-12 | Rockwell Collins, Inc. | System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling |
US20100064518A1 (en) * | 2008-09-12 | 2010-03-18 | Lower Nathan P | Fabrication process for a flexible, thin thermal spreader |
US20100064695A1 (en) * | 2008-09-12 | 2010-03-18 | Wilcoxon Ross K | Flexible flow channel for a modular liquid-cooled thermal spreader |
US8616266B2 (en) | 2008-09-12 | 2013-12-31 | Rockwell Collins, Inc. | Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid |
US8205337B2 (en) | 2008-09-12 | 2012-06-26 | Rockwell Collins, Inc. | Fabrication process for a flexible, thin thermal spreader |
US8650886B2 (en) | 2008-09-12 | 2014-02-18 | Rockwell Collins, Inc. | Thermal spreader assembly with flexible liquid cooling loop having rigid tubing sections and flexible tubing sections |
US20100065256A1 (en) * | 2008-09-12 | 2010-03-18 | Wilcoxon Ross K | Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid |
US20100078605A1 (en) * | 2008-09-29 | 2010-04-01 | Lower Nathan P | Glass thick film embedded passive material |
US8585937B2 (en) | 2008-09-29 | 2013-11-19 | Rockwell Collins, Inc. | Glass thick film embedded passive material |
US8119040B2 (en) | 2008-09-29 | 2012-02-21 | Rockwell Collins, Inc. | Glass thick film embedded passive material |
US20100078806A1 (en) * | 2008-09-30 | 2010-04-01 | Nirupama Chakrapani | Microelectronic package with wear resistant coating |
US7759780B2 (en) * | 2008-09-30 | 2010-07-20 | Intel Corporation | Microelectronic package with wear resistant coating |
US9435915B1 (en) | 2012-09-28 | 2016-09-06 | Rockwell Collins, Inc. | Antiglare treatment for glass |
CN104292749A (en) * | 2013-07-19 | 2015-01-21 | 味之素株式会社 | Resin composition |
JP2015038197A (en) * | 2013-07-19 | 2015-02-26 | 味の素株式会社 | Resin composition |
Also Published As
Publication number | Publication date |
---|---|
US20050269719A1 (en) | 2005-12-08 |
US7109591B2 (en) | 2006-09-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7109591B2 (en) | Integrated circuit device | |
US10153411B2 (en) | Light emitting device and method of manufacturing light emitting device | |
US20080061447A1 (en) | Wire-bonded package with electrically insulating wire encapsulant and thermally conductive overmold | |
US9565758B2 (en) | Alkali silicate glass based coating and method for applying | |
US7510888B2 (en) | LED arrangement | |
US7092890B2 (en) | Method for manufacturing thin GaAs die with copper-back metal structures | |
KR100287414B1 (en) | Semiconductor device and manufacturing method of the same | |
EP3163601B1 (en) | Method of producing a semiconductor device by directly bonding silver on a surface of a semiconductor element with silver oxide on a surface of a base | |
CN104979458B (en) | Semiconductor device | |
KR101248245B1 (en) | Coating for a microelectronic device, treatment comprising same, and method of managing a thermal profile of a microelectronic die | |
DE102011003969B4 (en) | Process for producing an optoelectronic component | |
DE102013112267A1 (en) | Semiconductor module with a semiconductor device covering a cover mass | |
US10825695B2 (en) | Method of manufacturing light emitting device | |
GB2086134A (en) | Resin encapsulated electronic devices | |
KR20120082898A (en) | Molded lens incorporating a window element | |
US20050110168A1 (en) | Low coefficient of thermal expansion (CTE) semiconductor packaging materials | |
US7312104B2 (en) | Resin composition for encapsulating semiconductor device | |
US5589714A (en) | Epoxy polymer filled with aluminum nitride-containing polymer and semiconductor devices encapsulated with a thermosetting resin containing aluminum nitride particles | |
US20180040781A1 (en) | Optoelectronic Semiconductor Component | |
US20120086035A1 (en) | LED Device With A Light Extracting Rough Structure And Manufacturing Methods Thereof | |
US10790424B2 (en) | Method of manufacturing light-emitting device, and light-emitting device | |
JP2005051194A (en) | Light-emitting device | |
US5627107A (en) | Semiconductor devices encapsulated with aluminum nitride-filled resins and process for preparing same | |
JPS6124253A (en) | Structure for semiconductor package | |
JP2001354754A (en) | Epoxy resin composition for semiconductor sealing and semiconductor device using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |