US20070058243A1 - Extended optical bandwidth semiconductor source - Google Patents
Extended optical bandwidth semiconductor source Download PDFInfo
- Publication number
- US20070058243A1 US20070058243A1 US11/407,534 US40753406A US2007058243A1 US 20070058243 A1 US20070058243 A1 US 20070058243A1 US 40753406 A US40753406 A US 40753406A US 2007058243 A1 US2007058243 A1 US 2007058243A1
- Authority
- US
- United States
- Prior art keywords
- waveguide
- gain
- ase
- optical bandwidth
- bandwidth source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5036—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-selective
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4251—Sealed packages
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4256—Details of housings
- G02B6/426—Details of housings mounting, engaging or coupling of the package to a board, a frame or a panel
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4256—Details of housings
- G02B6/4262—Details of housings characterised by the shape of the housing
- G02B6/4265—Details of housings characterised by the shape of the housing of the Butterfly or dual inline package [DIP] type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4285—Optical modules characterised by a connectorised pigtail
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4266—Thermal aspects, temperature control or temperature monitoring
- G02B6/4268—Cooling
- G02B6/4271—Cooling with thermo electric cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/04—Gain spectral shaping, flattening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0064—Anti-reflection components, e.g. optical isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0078—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for frequency filtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/0622—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/101—Curved waveguide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1057—Comprising an active region having a varying composition or cross-section in a specific direction varying composition along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
Definitions
- This invention relates to optical components in general, and more particularly to optical components for generating light.
- VCSEL vertical cavity surface emitting lasers
- the light source may emit light across different portions of the wavelength spectrum.
- semiconductor-based light sources emit light across a relatively narrow portion of the wavelength spectrum.
- the present invention is directed to a novel semiconductor light source for emitting light across an extended optical bandwidth.
- the present invention provides an optical bandwidth source for generating amplified spontaneous emission (ASE) across a particular wavelength range, the optical bandwidth source comprising:
- a waveguide having a first end and a second end, and the waveguide having a plurality of separate wavelength gain subsections arranged in a serial configuration to form an active waveguide between the first end and the second end;
- each of the wavelength gain subsections is arranged relative to one another so as to produce ASE across the particular wavelength range.
- ASE amplified spontaneous emission
- ASE amplified spontaneous emission
- a waveguide having a first end and a second end, and the waveguide having a plurality of separate waveguide gain subsections arranged in a serial configuration to form an active waveguide between the first end and the second end;
- first waveguide gain subsection electrically biasing a first waveguide gain subsection and a second waveguide gain subsection from the plurality of separate waveguide gain subsections
- the first waveguide gain subsection being configured between the first end and the second waveguide gain subsection
- the second waveguide gain subsection being configured between the second end and the first waveguide gain subsection
- the first waveguide gain subsection configured with a quantum-well structure having a bandgap with lower energy than the second waveguide gain subsection so as to produce longer wavelength ASE at the first waveguide gain subsection than at the second waveguide gain subsection, wherein the waveguide produces ASE across the particular wavelength range at the second end thereof formed by ASE produced by the first waveguide section and the second waveguide section.
- FIG. 1 is a schematic view illustrating one preferred form of broadband semiconductor light source formed in accordance with the present invention
- FIG. 2 is a schematic view illustrating one preferred form of broadband semiconductor light source module formed in accordance with the present invention
- FIG. 3A is a schematic top view of a package incorporating the broadband semiconductor light source module shown in FIG. 2 ;
- FIG. 3B is a schematic side view of a package incorporating the broadband semiconductor light source module shown in FIG. 2 ;
- FIG. 3C is a schematic end view of a package incorporating the broadband semiconductor light source module shown in FIG. 2 .
- the present invention is based on a novel seeded power-optical-amplifier (SPOA) technology.
- SPOA power-optical-amplifier
- This technology relies on the amplification of a low-power seed optical spectrum by a long-cavity semiconductor waveguide optimized for power amplification.
- This SPOA technology results in a high-power (>200 mW) broad-band ( ⁇ 35 nm) source available from 650 to 1650 nm.
- the SPOA sources are serially-multiplexed. This approach addresses markets such as optical coherence tomography and spectral-sliced wavelength division multiplexing.
- This novel broadband semiconductor light source provides significant advantages in performance, size, and cost over traditional semiconductor and super-continuum light sources.
- FIG. 1 A schematic representation of a novel serial-multiplexed, seeded power-optical-amplifier (SM-SPOA) broadband light source die 5 is shown in FIG. 1 .
- SM-SPOA serial-multiplexed, seeded power-optical-amplifier
- the device 5 consists of a curved active waveguide 10 having a plurality of gain, or seed, subsections 12 serially disposed along waveguide 10 .
- waveguide 10 is a single mode waveguide, although it may also be a multi-mode waveguide.
- Each gain, or seed, subsection 12 is adapted to generate amplified spontaneous emission (ASE).
- the gain profile along the waveguide 10 is engineered to generate ASE across a broad wavelength range (100-200 nm) when electrically biased above transparency. This is accomplished by varying the bandgap of the gain from lower to higher energy along the length of the waveguide in a discrete or continuous fashion using techniques such as semiconductor regrowth or quantum-well intermixing.
- each gain subsection 12 is configured to generate a different ASE profile.
- waveguide 10 may be configured to have a continuous gradation along its length to change the bandgap and thus present what is essentially an infinite number of subsections 12 .
- the ASE generated from the lower energy segments of the waveguide passes through the higher energy portions with low optical loss ( ⁇ 2 cm ⁇ 1).
- An angled waveguide (8-13 degrees) is used at the output of the device, followed by an antireflection coating 15 deposited on the semiconductor facet. This combination is used to reduce feedback ( ⁇ -50 dB) into the device and thus prevent distortion of the broadband spectral profile from Fabry Perot interference.
- the output will be highly linearly polarized due to the polarization dependence of the quantum-well gain.
- a high reflecting coating 17 is preferably placed on the opposite end of the device, e.g., at the end adjacent the low energy end of the waveguide.
- the basic principle of device operation is the amplification of a plurality of gain, or seed, spectrums of amplified spontaneous emission (ASE) along the length of a semiconductor waveguide containing active regions which are biased above transparency.
- the manner in which the seed light is generated and shaped (i.e., filtered), the number of gain, or seed, spectrums used, and the optical bandgap and electrical bias of those sections, all may be varied according to the particular design considerations to be addressed.
- the semiconductor material system used depends to a large extent on the wavelength of the desired application. Among others, material systems such as AlAs, GaAs, InP, GaP, InGaAs, InGaAsP, InAlGaAs, and GaN can be used.
- the die 5 consists of a serial connection of multiple gain subsections 12 formed along the semiconductor waveguide 10 .
- Nine gain subsections 12 are shown in FIG. 1 ; however, it should be appreciated that this number is merely exemplary and more or less than this number of wavelength gain subsections may be used.
- the gain profile within each gain subsection 12 is chosen so as to provide ASE in a particular wavelength range.
- the gain profiles can be defined in each gain subsection 12 by such techniques as epitaxial regrowth or quantum-well intermixing.
- the quantum-well blocks of these gain subsections are designed to provide a region of high gain with, for example, 3-10 quantum wells.
- a high reflectance mirror 17 is used to capture and redirect the portion of seed light traveling away from the output end of the device.
- the spectral profile of this mirror 17 is designed to provide the desired nominal ASE spectrum.
- This high reflectance mirror 17 can be defined through thin film coating of the cleaved semiconductor facet or by incorporating a distributed Bragg reflector along the waveguide.
- Each wavelength gain subsection 12 has an independent electrical contact to allow dynamic tailoring of the seed light spectrum.
- the output power of the wavelength gain sections 12 can range from 1 to 20 mW, although it is not limited to this range.
- An angled waveguide 10 is used at the output of the device, followed by an antireflection coating 15 on the semiconductor facet. This combination is used to eliminate feedback into the device and to prevent distortion of the broadband spectral profile from Fabry-Perot interference.
- the output of the device will be highly linearly polarized because of the polarization dependence of the quantum-well gain or, in the case of bulk active region, excess loss of TM over TE mode.
- the spectral shape of the ASE generated by the device can be dynamically varied by changing the electrical bias applied to the various gain sections 12 .
- the semiconductor die 5 may be soldered to an aluminum nitride carrier 20 and be packaged with its associated optical components so as to form a module 23 .
- a thin-film tap 25 and photodetector 30 may be included to provide power monitoring functionality.
- the thin-film tap 25 is preferably also used for spectral shaping. More particularly, the thin-film coating on this optic is preferably designed to not only reflect a small fraction of light (e.g., 1%) to an auxiliary path, but also to refine and further shape the optical spectrum emitted from the semiconductor device. For many applications, features such as spectral ripples must be removed.
- the thin film coating preferably helps to do this and adjust the spectrum to approach the ideal Gaussian shape.
- this optic could be stand-alone as a separate element from the tap and/or dynamically configurable.
- An optical isolator 35 may be used to eliminate feedback from downstream in the system.
- a thermoelectric cooler (TEC) (not shown, but preferably provided beneath aluminum nitride carrier 20 ) may be used to maintain the temperature of the entire optical platform.
- the optical train may be contained in a 14-pin hermetically-sealed butterfly package 40 with a single-mode fiber pigtail 45 .
- FIGS. 3A, 3B and 3 C show further details of the optical module 23 is shown in FIG. 3 .
- the broadband source module provides the performance criteria outlined in Table 1 over its life throughout the environmental conditions specified in Table 4.
- the specifications for the final product, alpha prototypes, and beta units are listed; however, it should be appreciated that this table is provided by way of example only and not by way of limitation.
- TABLE 1 Final Parameter Unit Min Typical Max ⁇ ⁇ Product Output Optical Power mW 10 25 ⁇ ⁇ ⁇ Spectral Bandwidth nm 100 ⁇ ⁇ ⁇ 200 Center Wavelength nm 1290 1300 1310 ⁇ ⁇ ⁇ Secondary Coherence Lobe 3 dB 30 50 ⁇ ⁇ ⁇ Relative Intensity Noise dB/Hz ⁇ 100 ⁇ ⁇ f ⁇ 1 GHz
- a broadband source module having the mechanical attributes specified in Table 2 for the final product, alpha prototypes, and beta units; however, it should be appreciated that this table is provided by way of example only and not by way of limitation.
- TABLE 2 Final Parameter Unit Value ⁇ ⁇ Product Fiber Type Type Single-Mode ⁇ ⁇ ⁇ Fiber Connector Type Bare ⁇ ⁇ ⁇ Fiber Pigtail Length m >1 ⁇ ⁇ ⁇ Package Style of Optical Type 14-Pin Butterfly ⁇ ⁇ ⁇ Module Dimensions of Optical mm 42 ⁇ 12 ⁇ 13 ⁇ ⁇ Module Sealing of Optical Module Type Hennetic ⁇ ⁇
- a laser source module has the electrical requirements specified in Table 3 for the final product, alpha prototypes, and beta units; however, it should be appreciated that this table is provided by way of example only and not by way of limitation.
- the broadband source module has a mean time to failure (MTTF) of greater than 10,000 hours. End of life (EOL) is considered to occur when the specifications of Table 1 can no longer be met.
- MTTF mean time to failure
- EOL End of life
- Processes and techniques compatible with Telcordia qualification standards are preferably used to ensure reliable operation. Qualification testing includes: aging, storage, damp-heat, thermal cycling, and mechanical shock/vibration. Other tests may be performed as needed to ensure product quality.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
An optical bandwidth source for generating amplified spontaneous emission (ASE) across a selected wavelength range, the optical bandwidth source including a waveguide having a first end and a second end, and comprising a plurality of separate wavelength gain subsections arranged in a serial configuration between the first end and the second end so as to collectively form an active waveguide between the first end and the second end; wherein each of the wavelength gain subsections is configured to produce ASE across a wavelength range which is less than, but contained within, the selected wavelength range, whereby the plurality of separate wavelength gain subsections collectively produce ASE across the selected wavelength range.
Description
- This patent application:
- (1) is a continuation-in-part of pending prior U.S. patent application Ser. No. 10/632,779, filed Aug. 1, 2003 by Daryoosh Vakhshoori et al. for SYSTEM FOR AMPLIFYING OPTICAL SIGNALS (Attorney's Docket No. AHURA-1);
- (2) claims benefit of pending prior U.S. Provisional Patent Application Ser. No. 60/454,036, filed Mar. 12, 2003 by Daryoosh Vakhshoori et al. for EXTENDED OPTICAL BANDWIDTH SEMICONDUCTOR SOURCE (Attorney's Docket No. AHURA-5 PROV); and
- (3) claims benefit of pending prior U.S. Provisional Patent Application Ser. No. 60/549,310, filed Mar. 2, 2004 by Kevin J. Knopp et al. for BANDWIDTH ADJUSTABLE BROADBAND LIGHT SOURCE FOR OPTICAL COHERENCE TOMOGRAPHY (Attorney's Docket No. AHURA-20 PROV).
- The three (3) above-identified patent applications are hereby incorporated herein by reference.
- This invention relates to optical components in general, and more particularly to optical components for generating light.
- In many applications it may be necessary and/or desirable to generate light.
- Different optical components are well known in the art for generating light. By way of example but not limitation, semiconductor lasers, such as vertical cavity surface emitting lasers (VCSEL's), are well known in the art for generating light. Depending on the particular construction used, the light source may emit light across different portions of the wavelength spectrum. By way of example, many semiconductor-based light sources emit light across a relatively narrow portion of the wavelength spectrum. However, in many applications it may be necessary and/or desirable to provide a semiconductor light source which emits light across a relatively broad band of wavelengths.
- The present invention is directed to a novel semiconductor light source for emitting light across an extended optical bandwidth.
- The present invention provides an optical bandwidth source for generating amplified spontaneous emission (ASE) across a particular wavelength range, the optical bandwidth source comprising:
- a waveguide having a first end and a second end, and the waveguide having a plurality of separate wavelength gain subsections arranged in a serial configuration to form an active waveguide between the first end and the second end;
- wherein each of the wavelength gain subsections is arranged relative to one another so as to produce ASE across the particular wavelength range.
- In another form of the invention, there is provided a system for generating amplified spontaneous emission (ASE) across a particular wavelength range, the system comprising:
-
- an optical bandwidth source for generating the ASE across the particular wavelength range, the optical bandwidth source comprising:
- a waveguide having a first end and a second end, and the waveguide having a plurality of separate wavelength gain subsections arranged in a serial configuration between the first end and the second end;
- wherein each of the wavelength gain subsections is arranged relative to one another so as to produce ASE across the particular wavelength range;
- a thin-film tap configured adjacent to the second end of the waveguide to divert a portion of the ASE produced by the waveguide to an auxiliary pathway;
- a power monitor configured to receive the portion of the ASE diverted along the auxiliary pathway so as to monitor the ASE produced by the optical bandwidth source;
- an isolator configured to receive the ASE remaining from the portion diverted toward the power monitor, the isolator configured to eliminate feedback therethrough toward the waveguide; and
- a single-mode filter fiber pigtail configured adjacent to the isolator in opposition to the waveguide so as to receive ASE emitted from the waveguide after passing through the isolator.
- an optical bandwidth source for generating the ASE across the particular wavelength range, the optical bandwidth source comprising:
- In another form of the invention, there is provided a method for generating amplified spontaneous emission (ASE) across a particular wavelength range, the method comprising:
- providing a waveguide having a first end and a second end, and the waveguide having a plurality of separate waveguide gain subsections arranged in a serial configuration to form an active waveguide between the first end and the second end; and
- electrically biasing a first waveguide gain subsection and a second waveguide gain subsection from the plurality of separate waveguide gain subsections, the first waveguide gain subsection being configured between the first end and the second waveguide gain subsection, the second waveguide gain subsection being configured between the second end and the first waveguide gain subsection, and the first waveguide gain subsection configured with a quantum-well structure having a bandgap with lower energy than the second waveguide gain subsection so as to produce longer wavelength ASE at the first waveguide gain subsection than at the second waveguide gain subsection, wherein the waveguide produces ASE across the particular wavelength range at the second end thereof formed by ASE produced by the first waveguide section and the second waveguide section.
- These and other objects and features of the present invention will be more fully disclosed or rendered obvious by the following detailed description of the preferred embodiments of the invention, which is to be considered together with the accompanying drawings wherein like numbers refer to like parts and further wherein:
-
FIG. 1 is a schematic view illustrating one preferred form of broadband semiconductor light source formed in accordance with the present invention; -
FIG. 2 is a schematic view illustrating one preferred form of broadband semiconductor light source module formed in accordance with the present invention; -
FIG. 3A is a schematic top view of a package incorporating the broadband semiconductor light source module shown inFIG. 2 ; -
FIG. 3B is a schematic side view of a package incorporating the broadband semiconductor light source module shown inFIG. 2 ; and -
FIG. 3C is a schematic end view of a package incorporating the broadband semiconductor light source module shown inFIG. 2 . - The present invention is based on a novel seeded power-optical-amplifier (SPOA) technology. This technology relies on the amplification of a low-power seed optical spectrum by a long-cavity semiconductor waveguide optimized for power amplification. This SPOA technology results in a high-power (>200 mW) broad-band (˜35 nm) source available from 650 to 1650 nm. To address market needs for sources of lower-power with an extended spectral bandwidth of 100 to 200 nm, the SPOA sources are serially-multiplexed. This approach addresses markets such as optical coherence tomography and spectral-sliced wavelength division multiplexing.
- This novel broadband semiconductor light source provides significant advantages in performance, size, and cost over traditional semiconductor and super-continuum light sources.
- Some of the technical advantages of this novel platform are:
- (i) extended spectral bandwidth (FWHM of 100 to 200 nm);
- (ii) high power (>20 mW);
- (iii) single integrated chip: no spectral “stitching” or external combining is required;
- (iv) smooth spectral shape with low secondary coherence function;
- (v) compact size and low electrical power consumption; and
- (vi) compatible with reliable telcom-qualified packaging techniques.
- A schematic representation of a novel serial-multiplexed, seeded power-optical-amplifier (SM-SPOA) broadband
light source die 5 is shown inFIG. 1 . - The
device 5 consists of a curvedactive waveguide 10 having a plurality of gain, or seed,subsections 12 serially disposed alongwaveguide 10. Preferablywaveguide 10 is a single mode waveguide, although it may also be a multi-mode waveguide. Each gain, or seed,subsection 12 is adapted to generate amplified spontaneous emission (ASE). The gain profile along thewaveguide 10 is engineered to generate ASE across a broad wavelength range (100-200 nm) when electrically biased above transparency. This is accomplished by varying the bandgap of the gain from lower to higher energy along the length of the waveguide in a discrete or continuous fashion using techniques such as semiconductor regrowth or quantum-well intermixing. In one preferred construction, each gainsubsection 12 is configured to generate a different ASE profile. In another construction,waveguide 10 may be configured to have a continuous gradation along its length to change the bandgap and thus present what is essentially an infinite number ofsubsections 12. The ASE generated from the lower energy segments of the waveguide passes through the higher energy portions with low optical loss (<2 cm−1). An angled waveguide (8-13 degrees) is used at the output of the device, followed by anantireflection coating 15 deposited on the semiconductor facet. This combination is used to reduce feedback (<-50 dB) into the device and thus prevent distortion of the broadband spectral profile from Fabry Perot interference. The output will be highly linearly polarized due to the polarization dependence of the quantum-well gain. A high reflectingcoating 17 is preferably placed on the opposite end of the device, e.g., at the end adjacent the low energy end of the waveguide. - The basic principle of device operation is the amplification of a plurality of gain, or seed, spectrums of amplified spontaneous emission (ASE) along the length of a semiconductor waveguide containing active regions which are biased above transparency. The manner in which the seed light is generated and shaped (i.e., filtered), the number of gain, or seed, spectrums used, and the optical bandgap and electrical bias of those sections, all may be varied according to the particular design considerations to be addressed. The semiconductor material system used depends to a large extent on the wavelength of the desired application. Among others, material systems such as AlAs, GaAs, InP, GaP, InGaAs, InGaAsP, InAlGaAs, and GaN can be used.
- The
die 5 consists of a serial connection ofmultiple gain subsections 12 formed along thesemiconductor waveguide 10. Ninegain subsections 12 are shown inFIG. 1 ; however, it should be appreciated that this number is merely exemplary and more or less than this number of wavelength gain subsections may be used. The gain profile within eachgain subsection 12 is chosen so as to provide ASE in a particular wavelength range. The gain profiles can be defined in eachgain subsection 12 by such techniques as epitaxial regrowth or quantum-well intermixing. The quantum-well blocks of these gain subsections are designed to provide a region of high gain with, for example, 3-10 quantum wells. - A
high reflectance mirror 17 is used to capture and redirect the portion of seed light traveling away from the output end of the device. The spectral profile of thismirror 17 is designed to provide the desired nominal ASE spectrum. Thishigh reflectance mirror 17 can be defined through thin film coating of the cleaved semiconductor facet or by incorporating a distributed Bragg reflector along the waveguide. Eachwavelength gain subsection 12 has an independent electrical contact to allow dynamic tailoring of the seed light spectrum. The output power of thewavelength gain sections 12 can range from 1 to 20 mW, although it is not limited to this range. - An
angled waveguide 10 is used at the output of the device, followed by anantireflection coating 15 on the semiconductor facet. This combination is used to eliminate feedback into the device and to prevent distortion of the broadband spectral profile from Fabry-Perot interference. - The output of the device will be highly linearly polarized because of the polarization dependence of the quantum-well gain or, in the case of bulk active region, excess loss of TM over TE mode.
- The spectral shape of the ASE generated by the device can be dynamically varied by changing the electrical bias applied to the
various gain sections 12. - Looking next at
FIG. 2 , the semiconductor die 5 may be soldered to analuminum nitride carrier 20 and be packaged with its associated optical components so as to form amodule 23. A thin-film tap 25 andphotodetector 30 may be included to provide power monitoring functionality. The thin-film tap 25 is preferably also used for spectral shaping. More particularly, the thin-film coating on this optic is preferably designed to not only reflect a small fraction of light (e.g., 1%) to an auxiliary path, but also to refine and further shape the optical spectrum emitted from the semiconductor device. For many applications, features such as spectral ripples must be removed. The thin film coating preferably helps to do this and adjust the spectrum to approach the ideal Gaussian shape. Also, if desired, this optic could be stand-alone as a separate element from the tap and/or dynamically configurable. Anoptical isolator 35 may be used to eliminate feedback from downstream in the system. A thermoelectric cooler (TEC) (not shown, but preferably provided beneath aluminum nitride carrier 20) may be used to maintain the temperature of the entire optical platform. The optical train may be contained in a 14-pin hermetically-sealed butterfly package 40 with a single-mode fiber pigtail 45. -
FIGS. 3A, 3B and 3C show further details of theoptical module 23 is shown inFIG. 3 . - In a preferred embodiment of the present invention, the broadband source module provides the performance criteria outlined in Table 1 over its life throughout the environmental conditions specified in Table 4. The specifications for the final product, alpha prototypes, and beta units are listed; however, it should be appreciated that this table is provided by way of example only and not by way of limitation.
TABLE 1 Final Parameter Unit Min Typical Max α β Product Output Optical Power mW 10 25 √ √ √ Spectral Bandwidth nm 100 √ √ √ 200 Center Wavelength nm 1290 1300 1310 √ √ √ Secondary Coherence Lobe3 dB 30 50 √ √ √ Relative Intensity Noise dB/Hz −100 √ √ f < 1 GHz - In a preferred embodiment of the present invention, there is provided a broadband source module having the mechanical attributes specified in Table 2 for the final product, alpha prototypes, and beta units; however, it should be appreciated that this table is provided by way of example only and not by way of limitation.
TABLE 2 Final Parameter Unit Value α β Product Fiber Type Type Single-Mode √ √ √ Fiber Connector Type Bare √ √ √ Fiber Pigtail Length m >1 √ √ √ Package Style of Optical Type 14-Pin Butterfly √ √ √ Module Dimensions of Optical mm 42 × 12 × 13 √ √ Module Sealing of Optical Module Type Hennetic √ √ - In a preferred embodiment of the present, a laser source module has the electrical requirements specified in Table 3 for the final product, alpha prototypes, and beta units; however, it should be appreciated that this table is provided by way of example only and not by way of limitation.
TABLE 3 Final Parameter Unit Min Typical Max α β Product SM-SPOA Current V 0 2 2.3 √ √ Driver A 0 0.5 1.5 √ √ TEC Driver V −1.5 1.5 √ √ A −1.5 1.5 √ √ Power Dissipation4 W 5 √ √ Thermistor kΩ 9.5 10 10.5 √ √ √ Resistance (@ 25° C.) Monitor Photodiode nA 100 √ √ Dark Current (Vreverse = 5 V) Signal Power μA/mW 3.8 4 4.2 √ √ Monitor Responsivity (Vreverse = 5 V) - The environmental operating conditions are shown in Table 4; however, it should be appreciated that this table is provided by way of example only and not by way of limitation.
TABLE 4 Final Parameter Unit Value α β Product Operating Temperature ° C. 5 to 45 √ √ Storage Temperature Range ° C. −40 to 75 √ √ Operating Humidity Range % 0 to 90 √ √ - The broadband source module has a mean time to failure (MTTF) of greater than 10,000 hours. End of life (EOL) is considered to occur when the specifications of Table 1 can no longer be met. Processes and techniques compatible with Telcordia qualification standards are preferably used to ensure reliable operation. Qualification testing includes: aging, storage, damp-heat, thermal cycling, and mechanical shock/vibration. Other tests may be performed as needed to ensure product quality.
Claims (25)
1. An optical bandwidth source for generating amplified spontaneous emission (ASE) across a particular wavelength range, the optical bandwidth source comprising:
a waveguide having a first end and a second end, and the waveguide having a plurality of separate wavelength gain subsections arranged in a serial configuration to form an active waveguide between the first end and the second end;
wherein each of the wavelength gain subsections is arranged relative to one another so as to produce ASE across the particular wavelength range.
2. An optical bandwidth source according to claim 1 wherein said waveguide comprises a single mode waveguide.
3. An optical bandwidth source according to claim 1 wherein said waveguide comprises a multi-mode waveguide.
4. An optical bandwidth source according to claim 1 wherein the particular wavelength range has a width of at least 100 nm.
5. An optical bandwidth source according to claim 4 wherein the width of the particular wavelength range is about 200 nm.
6. An optical bandwidth source according to claim 1 wherein the plurality of separate wavelength gain subsections of the waveguide comprise a quantum-well structure having a given gain profile in a direction from the first end of the waveguide toward the second end of the waveguide, wherein the gain profile of the quantum-well structure comprises a bandgap varying from lower to higher energy.
7. An optical bandwidth source according to claim 6 wherein the gain profile of the quantum-well structure is varied in a discrete fashion along a length of the waveguide.
8. An optical bandwidth source according to claim 6 wherein the gain profile of the quantum-well structure is varied in a continuous fashion along a length of the waveguide.
9. An optical bandwidth source according to claim 6 wherein the quantum-well structure is formed by semiconductor regrowth.
10. An optical bandwidth source according to claim 6 wherein the quantum-well structure is formed by quantum-well intermixing.
11. An optical bandwidth source according to claim 1 wherein at least a portion of the waveguide is curved between the first end and the second end.
12. An optical bandwidth source according to claim 11 wherein the curved portion of the waveguide forms an angle within a range of about 8° to 13°.
13. An optical bandwidth source according to claim 12 further comprising an antireflection coating deposited adjacent to the second end of the waveguide.
14. An optical bandwidth source according to claim 11 wherein the second end of the waveguide comprises a semiconductor facet having the antireflection coating disposed thereon so as to prevent distortion of a profile of the generated ASE.
15. An optical bandwidth source according to claim 14 further comprising a mirror disposed at the first end of the waveguide.
16. A system for generating amplified spontaneous emission (ASE) across a particular wavelength range, the system comprising:
an optical bandwidth source for generating the ASE across the particular wavelength range, the optical bandwidth source comprising:
a waveguide having a first end and a second end, and the waveguide having a plurality of separate wavelength gain subsections arranged in a serial configuration between the first end and the second end;
wherein each of the wavelength gain subsections is arranged relative to one another so as to produce ASE across the particular wavelength range;
a thin-film tap configured adjacent to the second end of the waveguide to divert a portion of the ASE produced by the waveguide to an auxiliary pathway;
a power monitor configured to receive the portion of the ASE diverted along the auxiliary pathway so as to monitor the ASE produced by the optical bandwidth source;
an isolator configured to receive the ASE remaining from the portion diverted toward the power monitor, the isolator configured to eliminate feedback therethrough toward the waveguide; and
a filter fiber pigtail configured adjacent to the isolator in opposition to the waveguide so as to receive ASE emitted from the waveguide after passing through the isolator.
17. A system according to claim 16 wherein said waveguide is a single mode waveguide and further wherein said filter fiber pigtail is a single mode filter fiber pigtail.
18. A system according to claim 17 wherein said waveguide is a multi-node waveguide and further wherein said filter fiber pigtail is a multi-mode filter fiber pigtail.
19. A system for generating amplified spontaneous emission (ASE) according to claim 16 further comprising a mounting substrate in thermal connection to a thermoelectric cooling device (TEC), and the mounting substrate in thermal connection to the optical bandwidth source.
20. A system for generating amplified spontaneous emission (ASE) according to claim 19 wherein the mounting substrate is in aluminum nitride carrier.
21. A method for generating amplified spontaneous emission (ASE) across a particular wavelength range, the method comprising:
providing a waveguide having a first end and a second end, and the waveguide having a plurality of separate waveguide gain subsections arranged in a serial configuration to form an active waveguide between the first end and the second end; and
electrically biasing a first waveguide gain subsection and a second waveguide gain subsection from the plurality of separate waveguide gain subsections, the first waveguide gain subsection being configured between the first end and the second waveguide gain subsection, the second waveguide gain subsection being configured between the second end and the first waveguide gain subsection, and the first waveguide gain subsection configured with a quantum-well structure having a bandgap with lower energy than the second waveguide gain subsection so as to produce longer wavelength ASE at the first waveguide gain subsection than at the second waveguide gain subsection, wherein the waveguide produces ASE across the particular wavelength range at the second end thereof formed by ASE produced by the first waveguide section and the second waveguide section.
22. A method according to claim 21 wherein said waveguide comprises a single mode waveguide.
23. A method according to claim 21 wherein said waveguide comprises a multi-mode waveguide.
24. A method according to claim 21 wherein the particular wavelength range has a width of at least 100 nm.
25. A method according to claim 21 wherein the width of the particular wavelength range is about 200 nm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/407,534 US20070058243A1 (en) | 2003-03-12 | 2006-04-19 | Extended optical bandwidth semiconductor source |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45403603P | 2003-03-12 | 2003-03-12 | |
US10/632,779 US7215836B2 (en) | 2002-08-02 | 2003-08-01 | System for amplifying optical signals |
US54931004P | 2004-03-02 | 2004-03-02 | |
US10/800,206 US7068905B2 (en) | 2003-03-12 | 2004-03-12 | Extended optical bandwidth semiconductor source |
US11/407,534 US20070058243A1 (en) | 2003-03-12 | 2006-04-19 | Extended optical bandwidth semiconductor source |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/800,206 Continuation US7068905B2 (en) | 2003-03-12 | 2004-03-12 | Extended optical bandwidth semiconductor source |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070058243A1 true US20070058243A1 (en) | 2007-03-15 |
Family
ID=33493084
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/800,206 Expired - Fee Related US7068905B2 (en) | 2003-03-12 | 2004-03-12 | Extended optical bandwidth semiconductor source |
US11/407,534 Abandoned US20070058243A1 (en) | 2003-03-12 | 2006-04-19 | Extended optical bandwidth semiconductor source |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/800,206 Expired - Fee Related US7068905B2 (en) | 2003-03-12 | 2004-03-12 | Extended optical bandwidth semiconductor source |
Country Status (1)
Country | Link |
---|---|
US (2) | US7068905B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090014646A1 (en) * | 2006-02-13 | 2009-01-15 | Daryoosh Vakhshoori | Method and apparatus for incorporating electrostatic concentrators and/or ion mobility separators with Raman, IR, UV, XRF, LIF and LIBS spectroscopy and /or other spectroscopic techniques |
US8081305B2 (en) | 2007-05-21 | 2011-12-20 | Ahura Scientific Inc. | Preparing samples for optical measurement |
US8248588B2 (en) | 2007-05-21 | 2012-08-21 | Thermo Scientific Portable Analytical Instruments Inc. | Handheld infrared and raman measurement devices and methods |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7344905B2 (en) * | 2003-04-15 | 2008-03-18 | Ahura Corporation | Spatial bandgap modifications and energy shift of semiconductor structures |
ATE304248T1 (en) * | 2003-04-16 | 2005-09-15 | Cit Alcatel | RAMAN PUMP SOURCE BASED ON SEMICONDUCTOR OPTICAL AMPLIFIER |
EP2193878B1 (en) | 2006-12-15 | 2011-08-03 | Fachhochschule Bonn-Rhein-Sieg | A manually fed machine for working on materials, objects and the like, and protective means for such a machine |
JP2010525583A (en) * | 2007-05-01 | 2010-07-22 | エグザロス・アクチェンゲゼルシャフト | Light source and equipment |
US8049957B2 (en) * | 2007-11-06 | 2011-11-01 | Northrop Grumman Systems Corporation | Scalable semiconductor waveguide amplifier |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US8143148B1 (en) | 2008-07-14 | 2012-03-27 | Soraa, Inc. | Self-aligned multi-dielectric-layer lift off process for laser diode stripes |
US8259769B1 (en) * | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
US8124996B2 (en) | 2008-08-04 | 2012-02-28 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
WO2010120819A1 (en) | 2009-04-13 | 2010-10-21 | Kaai, Inc. | Optical device structure using gan substrates for laser applications |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8891086B2 (en) * | 2009-06-15 | 2014-11-18 | Thermo Scientific Portable Analytical Instruments Inc. | Optical scanning systems and methods for measuring a sealed container with a layer for reducing diffusive scattering |
US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9927611B2 (en) | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
US8269977B2 (en) * | 2010-05-26 | 2012-09-18 | Gerard A Alphonse | Discrete spectrum broadband optical source |
US8259304B2 (en) * | 2010-05-26 | 2012-09-04 | Gerard A Alphonse | Broadband discrete spectrum optical source |
US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9318875B1 (en) | 2011-01-24 | 2016-04-19 | Soraa Laser Diode, Inc. | Color converting element for laser diode |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
US9236530B2 (en) | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
US9287684B2 (en) | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
US8971370B1 (en) | 2011-10-13 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices using a semipolar plane |
US9020003B1 (en) | 2012-03-14 | 2015-04-28 | Soraa Laser Diode, Inc. | Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates |
US9343871B1 (en) | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9800016B1 (en) | 2012-04-05 | 2017-10-24 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9099843B1 (en) | 2012-07-19 | 2015-08-04 | Soraa Laser Diode, Inc. | High operating temperature laser diodes |
US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
US9166372B1 (en) | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
US9520695B2 (en) | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
US9209596B1 (en) | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
US9564736B1 (en) | 2014-06-26 | 2017-02-07 | Soraa Laser Diode, Inc. | Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
US9666677B1 (en) | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
US9653642B1 (en) | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
US10938182B2 (en) | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
US11437775B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US10903623B2 (en) | 2019-05-14 | 2021-01-26 | Soraa Laser Diode, Inc. | Method and structure for manufacturable large area gallium and nitrogen containing substrate |
US11228158B2 (en) | 2019-05-14 | 2022-01-18 | Kyocera Sld Laser, Inc. | Manufacturable laser diodes on a large area gallium and nitrogen containing substrate |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6038239A (en) * | 1995-04-20 | 2000-03-14 | Gabbert; Manfred | Tunable alignment-stable laser light source having a spectrally filtered exit |
US6141477A (en) * | 1997-01-10 | 2000-10-31 | Nec Corporation | Semiconductor optical amplification element |
US6212310B1 (en) * | 1996-10-22 | 2001-04-03 | Sdl, Inc. | High power fiber gain media system achieved through power scaling via multiplexing |
US6292288B1 (en) * | 1998-07-23 | 2001-09-18 | The Furukawa Electric Co., Ltd. | Raman amplifier, optical repeater, and raman amplification method |
US6433921B1 (en) * | 2001-01-12 | 2002-08-13 | Onetta, Inc. | Multiwavelength pumps for raman amplifier systems |
US6522465B1 (en) * | 2001-09-27 | 2003-02-18 | Intel Corporation | Transmitting spectral filtering of high power extreme ultra-violet radiation |
US6542287B1 (en) * | 2000-12-12 | 2003-04-01 | Onetta, Inc. | Optical amplifier systems with transient control |
US20030095737A1 (en) * | 2001-10-09 | 2003-05-22 | Welch David F. | Transmitter photonic integrated circuits (TxPIC) and optical transport networks employing TxPICs |
US6614819B1 (en) * | 1999-09-02 | 2003-09-02 | Agility Communications, Inc. | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator |
US6693740B2 (en) * | 2001-08-07 | 2004-02-17 | Corning Incorporated | Dispersion managed discrete Raman amplifiers |
US6697558B2 (en) * | 2000-03-03 | 2004-02-24 | Fitel U.S.A. Corp | Raman amplified optical system with reduction of four-wave mixing effects |
US6731426B2 (en) * | 2001-02-23 | 2004-05-04 | Photon-X, Inc. | Long wavelength optical amplifier |
US6751013B1 (en) * | 2002-01-15 | 2004-06-15 | Onetta, Inc. | Gain-clamped semiconductor optical amplifiers with adjustable gain levels |
US6804281B1 (en) * | 2001-01-23 | 2004-10-12 | James N. Walpole | Large modal volume semiconductor laser system with spatial mode filter |
US6803604B2 (en) * | 2001-03-13 | 2004-10-12 | Ricoh Company, Ltd. | Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device |
US7116851B2 (en) * | 2001-10-09 | 2006-10-03 | Infinera Corporation | Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance |
US7127168B2 (en) * | 2001-06-13 | 2006-10-24 | Nippon Telegraph And Telephone Corporation | Multi-wavelength optical modulation circuit and wavelength-division multiplexed optical signal transmitter |
-
2004
- 2004-03-12 US US10/800,206 patent/US7068905B2/en not_active Expired - Fee Related
-
2006
- 2006-04-19 US US11/407,534 patent/US20070058243A1/en not_active Abandoned
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6038239A (en) * | 1995-04-20 | 2000-03-14 | Gabbert; Manfred | Tunable alignment-stable laser light source having a spectrally filtered exit |
US6212310B1 (en) * | 1996-10-22 | 2001-04-03 | Sdl, Inc. | High power fiber gain media system achieved through power scaling via multiplexing |
US6141477A (en) * | 1997-01-10 | 2000-10-31 | Nec Corporation | Semiconductor optical amplification element |
US6292288B1 (en) * | 1998-07-23 | 2001-09-18 | The Furukawa Electric Co., Ltd. | Raman amplifier, optical repeater, and raman amplification method |
US6614819B1 (en) * | 1999-09-02 | 2003-09-02 | Agility Communications, Inc. | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator |
US6697558B2 (en) * | 2000-03-03 | 2004-02-24 | Fitel U.S.A. Corp | Raman amplified optical system with reduction of four-wave mixing effects |
US6542287B1 (en) * | 2000-12-12 | 2003-04-01 | Onetta, Inc. | Optical amplifier systems with transient control |
US6433921B1 (en) * | 2001-01-12 | 2002-08-13 | Onetta, Inc. | Multiwavelength pumps for raman amplifier systems |
US6804281B1 (en) * | 2001-01-23 | 2004-10-12 | James N. Walpole | Large modal volume semiconductor laser system with spatial mode filter |
US6731426B2 (en) * | 2001-02-23 | 2004-05-04 | Photon-X, Inc. | Long wavelength optical amplifier |
US6803604B2 (en) * | 2001-03-13 | 2004-10-12 | Ricoh Company, Ltd. | Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device |
US7127168B2 (en) * | 2001-06-13 | 2006-10-24 | Nippon Telegraph And Telephone Corporation | Multi-wavelength optical modulation circuit and wavelength-division multiplexed optical signal transmitter |
US6693740B2 (en) * | 2001-08-07 | 2004-02-17 | Corning Incorporated | Dispersion managed discrete Raman amplifiers |
US6522465B1 (en) * | 2001-09-27 | 2003-02-18 | Intel Corporation | Transmitting spectral filtering of high power extreme ultra-violet radiation |
US20030095737A1 (en) * | 2001-10-09 | 2003-05-22 | Welch David F. | Transmitter photonic integrated circuits (TxPIC) and optical transport networks employing TxPICs |
US7116851B2 (en) * | 2001-10-09 | 2006-10-03 | Infinera Corporation | Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance |
US6751013B1 (en) * | 2002-01-15 | 2004-06-15 | Onetta, Inc. | Gain-clamped semiconductor optical amplifiers with adjustable gain levels |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090014646A1 (en) * | 2006-02-13 | 2009-01-15 | Daryoosh Vakhshoori | Method and apparatus for incorporating electrostatic concentrators and/or ion mobility separators with Raman, IR, UV, XRF, LIF and LIBS spectroscopy and /or other spectroscopic techniques |
US7838825B2 (en) | 2006-02-13 | 2010-11-23 | Ahura Scientific Inc. | Method and apparatus for incorporating electrostatic concentrators and/or ion mobility separators with Raman, IR, UV, XRF, LIF and LIBS spectroscopy and/or other spectroscopic techniques |
US8081305B2 (en) | 2007-05-21 | 2011-12-20 | Ahura Scientific Inc. | Preparing samples for optical measurement |
US8248588B2 (en) | 2007-05-21 | 2012-08-21 | Thermo Scientific Portable Analytical Instruments Inc. | Handheld infrared and raman measurement devices and methods |
Also Published As
Publication number | Publication date |
---|---|
US7068905B2 (en) | 2006-06-27 |
US20040247275A1 (en) | 2004-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7068905B2 (en) | Extended optical bandwidth semiconductor source | |
US7760782B2 (en) | Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser | |
US20050018732A1 (en) | Uncooled and high temperature long reach transmitters, and high power short reach transmitters | |
JP2001339118A (en) | Light emitting module | |
US7933304B2 (en) | Semiconductor laser diode and optical module employing the same | |
KR100575966B1 (en) | Broadband light source | |
Adachi et al. | 100° C, 25 Gbit/s direct modulation of 1.3 µm surface emitting laser | |
US20020041613A1 (en) | Semiconductor laser device and opticlal fiber amplifier using the same | |
US20100074282A1 (en) | Wavelength-tunable external cavity laser | |
US20050105575A1 (en) | Multi-channel light source and multi-channel optical module using the same | |
US20020075914A1 (en) | Semiconductor laser module, laser unit, and raman amplifier | |
US20020097772A1 (en) | Stabilized optical pump laser | |
CA2732912C (en) | External cavity laser module comprising a multi-functional optical element | |
US6798798B2 (en) | Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module | |
Wipiejewski et al. | Red VCSELs for POF data transmission and optical sensing applications | |
EP3254346B1 (en) | Combined gain-soa chip | |
EP1168538A1 (en) | Semiconductor laser module and pumping light source comprising the same | |
Grillanda et al. | 16 wavelengths comb source using large-scale hybrid photonic integration | |
Kimura et al. | 1480-nm laser diode module with 250-mw output for optical amplifiers (fol 1404qq series) | |
Kisker et al. | Infrared vertical-cavity surface-emitting lasers: An industrial perspective | |
CN218070543U (en) | Semiconductor laser and 10G PON OLT, OTDR detection optical module and high-capacity data communication optical module applying same | |
JP7107180B2 (en) | Multi-wavelength optical transmitter | |
US20030210729A1 (en) | Multimode light generating module, semiconductor laser apparatus, and optical fiber amplifier | |
Saini et al. | 150 mW high-power angled-stripe superluminescent diode at 1550 nm | |
Akhavan et al. | High power external cavity semiconductor laser with wavelength tuning over C, L, and S-bands using single-angled-facet gain chip |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |