US20060292804A1 - Nitride semiconductor light emitting diode and fabrication method thereof - Google Patents
Nitride semiconductor light emitting diode and fabrication method thereof Download PDFInfo
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- US20060292804A1 US20060292804A1 US11/458,938 US45893806A US2006292804A1 US 20060292804 A1 US20060292804 A1 US 20060292804A1 US 45893806 A US45893806 A US 45893806A US 2006292804 A1 US2006292804 A1 US 2006292804A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 66
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000002310 reflectometry Methods 0.000 claims description 18
- 239000003989 dielectric material Substances 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
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- 238000010030 laminating Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 21
- 238000009413 insulation Methods 0.000 abstract description 10
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- SEWHDNLIHDBVDZ-UHFFFAOYSA-N 1,2,3-trichloro-4-(2-chlorophenyl)benzene Chemical compound ClC1=C(Cl)C(Cl)=CC=C1C1=CC=CC=C1Cl SEWHDNLIHDBVDZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- IUYHQGMDSZOPDZ-UHFFFAOYSA-N 2,3,4-trichlorobiphenyl Chemical compound ClC1=C(Cl)C(Cl)=CC=C1C1=CC=CC=C1 IUYHQGMDSZOPDZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
Definitions
- the present invention relates to a nitride semiconductor light emitting diode, and more particularly, to a nitride semiconductor light emitting diode and a fabrication method thereof, in which a high reflectivity layer is formed to minimize light loss as well as achieve excellent electrostatic discharge characteristics.
- Nitride semiconductor Light Emitting Diodes are being spotlighted as high power optical devices capable of generating single wavelength light such as blue or green light to realize full color display.
- a nitride semiconductor LED is made by growing single crystal semiconductor expressed as a formula of Al x In y Ga (1-x-y) N (wherein 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 and 0 ⁇ x+y ⁇ 1) on a specific substrate of for example sapphire for growing GaN.
- the sapphire substrate as a representative substrate for growing GaN has two electrodes formed on crystallized semiconductor layers as shown in FIG. 1 a because it is insulated.
- a nitride semiconductor LED 10 includes a sapphire substrate 11 , a first nitride semiconductor layer 13 , an active layer 15 and a second nitride semiconductor layer 17 formed in their order on the sapphire substrate 11 . Further, in order to form two electrodes on the semiconductor layers as described above, predetermined regions of the second nitride semiconductor layer 17 and the active layer 15 are etched to form a general mesa structure.
- the first electrode 18 a is arranged on the exposed region of the first nitride semiconductor layer 13
- the second electrode 18 b is arranged on the second nitride semiconductor 17 .
- the nitride semiconductor LED 10 can be loaded on a Printed Circuit Board (PCB) 21 and then covered with resin 28 to form an LED package 20 .
- a circuit pattern including first and second conductive patterns 22 a and 22 b are formed on the PCB 21 , the LED 10 is attached to the second conductive pattern 22 b via a conductive paste layer 16 , and the electrodes 18 b and 18 a of the LED 10 are connected to the first and second conductive patterns 22 a and 22 b via the wires 24 a and 24 b.
- nitride semiconductor LEDs and a fabrication method thereof which can minimize light loss as well as maximize luminous efficiency by using a suitable reflector structure.
- a nitride semiconductor Light Emitting Diode comprising: a transparent substrate for growing nitride semiconductor single crystal thereon; a light emitting structure including a first nitride semiconductor layer, an active region a second nitride semiconductor layer formed in their order on the substrate; a dielectric mirror layer formed on the underside of the substrate and having at least a pair of first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity, the first and second dielectric films being laminated on each other in an alternating fashion; and a lateral insulation layer formed on the side of the substrate and the light emitting structure.
- a transparent substrate for growing nitride semiconductor single crystal thereon
- a light emitting structure including a first nitride semiconductor layer, an active region a second nitride semiconductor layer formed in their order on the substrate
- a dielectric mirror layer formed on the underside of the substrate and having at least a pair of first dielectric
- the lateral insulation layer comprises a dielectric mirror layer equal to the dielectric mirror layer formed on the underside of the substrate.
- the first and second dielectric films comprise oxide or nitride containing one element selected from a group including Si, Zr, Ta, Ti and Al. It is also preferred that each of the first and second dielectric films has a thickness of about 300 to 900 ⁇ .
- each of the first and second dielectric films may comprise a SiO 2 film or a Si 3 N 4 film, wherein the SiO 2 film may have a thickness of about 600 to 600 ⁇ , and the Si 3 N 4 film has a thickness of about 400 to 600 ⁇ .
- the dielectric mirror layer preferably may have a reflectivity of at least 90%, and more preferably a reflectivity of at least 95%.
- a wafer-level fabrication method of nitride semiconductor Light Emitting Diodes comprising the following steps of: preparing a transparent wafer for growing single crystal nitride semiconductor thereon; forming a light emitting structure including a first nitride semiconductor layer, an active layer and a second nitride semiconductor layer laminated in their order on the wafer; cutting the wafer together with the light emitting structure into the size of LED to expose the side of each LED; and laminating at least one alternating pair of first and second dielectric materials on the side and the underside of the LED, the first dielectric material having a first refractivity and the second dielectric material having a second refractivity larger than the first refractivity, whereby the first and second dielectric materials are laminated at least on the underside of the LED to form a dielectric mirror layer.
- LEDs Light Emitting Diodes
- the step of cutting the wafer together with the light emitting structure into the size of LED may include: attaching a tape on the light emitting structure, cutting the wafer from the underside into LEDs and stretching the tape to sufficiently expose the side of the cut LEDs.
- first and second dielectric materials are laminated on the side of the LED at substantially same thickness and number as the first and second dielectric materials on the underside of the LED to form a dielectric mirror layer.
- FIG. 1 a is a sectional view illustrating a conventional nitride semiconductor LED
- FIG. 1 b is an LED package incorporating the LED in FIG. 1 a;
- FIG. 2 a is a sectional view illustrating a nitride semiconductor LED according to a first embodiment of the invention
- FIG. 2 b is a magnification of the part A in FIG. 2 a for illustrating the sectional configuration of a multilayer mirror structure adopted to the LED;
- FIG. 3 is a sectional view illustrating a package having the semiconductor LED according to the invention.
- FIGS. 4 a to 4 e are sectional views illustrating a fabrication method of nitride semiconductor LEDs according to the invention.
- FIG. 5 is a graph showing Optical Power of the present example and the comparative example.
- FIG. 2 a is a sectional view illustrating a nitride semiconductor LED according to a first embodiment of the invention.
- a nitride semiconductor LED 30 includes a transparent substrate 31 for growing nitride semiconductor thereon, a first nitride semiconductor substrate 33 , an active region or layer 35 and a second nitride semiconductor layer 37 formed in their order on the substrate 31 .
- the first and second electrodes 38 a and 38 b are formed respectively on a predetermined region of the first nitride semiconductor layer 33 exposed by mesa etching and the second semiconductor layer 35 .
- the transparent substrate 31 may be made of sapphire, and the first nitride semiconductor layer 33 may be formed of an n-doped GaN layer.
- the active layer 35 maybe formed of an undoped InGaN layer of a multi-quantum well structure, and the second nitride semiconductor layer 37 may be formed of a p-doped GaN layer and a p-doped AlGaN layer.
- the nitride semiconductor LED 30 of the invention includes a dielectric mirror layer 39 formed on both the side and the underside. As shown in FIG. 3 b, the dielectric mirror layer 39 has three pairs of alternating first and second dielectric materials or films 39 a and 39 b, but is not limited thereto.
- the first dielectric films 39 a have a first refractivity
- the second dielectric films 39 b have a second refractivity higher than the first refractivity.
- the material type, thickness and alternating number (i.e., the number of pairs) of the dielectric mirror layer 39 can be so set that the dielectric mirror layer 39 has a suitable reflectivity according to oscillation wavelength.
- the dielectric films 39 a and 39 b may be made of oxide or nitride containing one element selected from the group consisting of Si, Zr, Ta, Ti and Al.
- the dielectric material shows substantially no light loss owing to its low absorptivity nearing zero, and can realize high reflectivity based upon the refractivity difference of the multilayer dielectric films of the dielectric mirror layer.
- the dielectric mirror layer 39 adopted in the invention can have a reflectivity of about 80%, preferably 90%, and more preferably 98%.
- Each of the first and second dielectric films 39 a and 39 b preferably has a thickness of about 300 to 900 ⁇ regarding a typical wavelength range (e.g., about 350 to 550 mm) oscillated from the nitride semiconductor LED.
- Representative examples of the dielectric films may include a SiO 2 film and a Si 3 N 4 film.
- the SiO 2 film is used to form a lower refractivity layer with relation to that formed by the Si 3 N 4 film. It is preferred that the SiO 2 film has a thickness of about 600 to 800 ⁇ and the Si 3 N 4 film has a thickness of about 400 to 600 ⁇ .
- Table 1 below illustrates a dielectric mirror layer structure for realizing high reflectivity of at least 98%: TABLE 1 Oscillation Re- Number of Re- wavelength Material Thickness fractivity Pairs flectivity 390 nm SiO 2 663 1.47 6 98 Si 3 N 4 469 2.0787 450 nm SiO 2 765 1.47 6 98.5 Si 3 N 4 547 2.0547 470 nm SiO 2 799 1.47 6 98 Si 3 N 4 573 2.0489
- the dielectric mirror layer 39 composed according to conditions in Table 1 above has a high reflectivity of at least 98% with respect to an oscillation wavelength range from 390 to 470 nm. Instead of being scattered or absorbed from/into a defective reflective surface, the most of light directed downward in the diode is reflected upward by the dielectric mirror layer of the invention.
- the semiconductor LED of the invention also has an insulation layer formed on the side.
- This lateral insulation layer provides protection to the outside surface of the diode as well as the electrically-insulated dielectric mirror layer. That is, although an LED with an exposed lateral portion may be destructed by surge voltage, the LED 30 shown in FIG. 2 a can have excellent reliability of fine Electrostatic Discharge (ESD) characteristics because the insulation layer is formed also on the side.
- ESD Electrostatic Discharge
- the lateral insulation layer may be formed of an insulating material different from that of the dielectric mirror layer only on the side of the LED, separate from the formation of the dielectric mirror layer.
- the lateral insulation layer on the side of the LED may be formed simultaneous with the dielectric mirror layer 39 , with the same dielectric mirror layer as the dielectric mirror layer 39 .
- FIG. 3 is a sectional view illustrating a package having the semiconductor LED according to the invention.
- a nitride semiconductor LED package 40 includes a PCB 41 , a nitride semiconductor LED 30 mounted on the PCB 41 and 1 transparent resin structure 48 formed around the LED 30 mounted on the PCB 41 .
- the PCB 41 includes first and second conductive patterns 42 a and 42 b formed thereon.
- the LED 30 has a dielectric mirror layer 39 formed beneath and around the LED 30 , and is bonded onto the second conductive pattern 42 b via an adhesive (not shown) made of conductive paste such as Ag. Further, the LED 30 has electrodes (e.g., 38 b and 38 a in FIG. 2 a ) which are connected respectively to the first and second conductive patterns 42 a and 42 b.
- the package 40 adopting the LED 30 of the invention even if directed downward through a transparent sapphire substrate, a light ray a generated from the nitride semiconductor LED 30 is not scattered or absorbed from/into a reflective surface, which is uneven owing to the adhesive, but reflects upward from the high reflectivity dielectric mirror layer 39 . Also, because the dielectric mirror layer 39 is formed around the lateral portion of the LED 30 of the invention, a light ray b directed toward the lateral portion can be re-reflected upward. Therefore, the invention effectively forms the high reflectivity dielectric mirror layer also on the side of the LED
- the LED of the invention has the high reflectivity dielectric mirror layer formed up to the side of the LED to minimize substantial extinction of undesirably directed light rays thereby maximizing resultant luminous efficiency. Further, the LED of the invention is protected at both the side and the underside by the electrically-insulated dielectric mirror layer to improve ESD characteristics.
- FIGS. 4 a to 4 e are sectional views illustrating a fabrication method of a plurality of nitride semiconductor LEDs according to the invention.
- the wafer-level fabrication process of nitride semiconductor LEDs will provide more apparent understanding to an advantage of the invention that further facilitates the formation of the dielectric mirror layer of the invention.
- a light emitting structure 105 including a first nitride semiconductor layer, an active layer and a second nitride semiconductor layer is formed on a transparent wafer 101 of for example sapphire for growing nitride thereon.
- the sapphire wafer 101 together with the light emitting structure 105 can be divided into respective unit LEDs 110 as indicated with dotted lines.
- a first electrode 111 a is formed on an exposed region of the first nitride semiconductor layer, which is exposed via mesa etching, and a second electrode 111 b is formed on the second nitride semiconductor layer as shown in FIG. 4 b.
- a p-electrode can be provided by forming a transparent electrode layer on the p-doped nitride semiconductor layer and then a bonding metal on the transparent electrode layer.
- the wafer having the light emitting structure is cut according to the size of unit LED exposing the side of the unit LEDs, which in turn are provided at the side and the underside with suitable dielectric mirror layers made of a desired dielectric material.
- this process can be performed according to the steps as shown in FIGS. 4 c to 4 e, starting with the step of attaching a tape 120 on the light emitting structure.
- a resultant structure attached with the tape 120 is placed with the upside down so as to facilitate the following cutting step.
- the cutting step is performed from the underside of the wafer to divide the resultant structure into the unit LEDs, and the tape is stretched to expose the side of the cut unit LEDs.
- a first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity are laminated alternating with each other for at least one time on the side and the underside of the unit LEDs.
- the lamination is performed to suitably form the first and second dielectric films with a desired thickness in order to realize the dielectric mirror layers.
- the dielectric layer lamination as shown in FIG. 4 d provides a plurality of LEDs 110 each having a dielectric mirror layer 119 on the side and the underside, in which the dielectric mirror layer 119 includes the first dielectric film of the first refractivity and the second dielectric film of the second refractivity.
- This embodiment illustrates that the same dielectric mirror layer 119 is also formed on the side of the each LED by adopting a desired process and material capable of sufficiently overcoming step coverage. This structure can improve the reflectivity at the side of the LED to further raise the luminous efficiency.
- the dielectric mirror layer coated on the side of the LED can function as a desirable insulation layer to improve ESC characteristics of the LED so that high reliability LEDs can be expected.
- GaN LED according to the present invention was produced.
- n-type GaN layer, InGaN/GaN MQW active layer and p-type GaN layer were grown on a sapphire substrate sequentially. Then, 7 pairs of Al 2 O 3 film and Si 3 N 4 film were formed as the present dielectric mirror layer on bottom and side surfaces of the resulting structure as the LED shown in FIG. 2A .
- the thickness of Al 2 O 3 film was about 700 ⁇ and the thickness of Si 3 N 4 film was about 540 ⁇ .
- GaN LED of this comparative example is made in the same manner and material as the above example except that the dielectric mirror layer was employed.
- the optical power of each LED was measured using a chip prober(OPTO corp. Japan). The result is shown in FIG. 5 .
- the LED according to the present example shows more optical power(increased about 90.2%) than that of the comparative example.
- the high reflectivity dielectric mirror layer including the alternating pair of dielectric films having different refractivities is formed on both the side and the underside of the LED to effectively collimate undesirably-directed light rays, which may be otherwise extinguished, thereby maximizing luminous efficiency. Furthermore, the dielectric mirror layer can also protect the side of the LED to remarkably improve ESD characteristics of the LED.
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Abstract
The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent substrate. A dielectric mirror layer is formed on the underside of the substrate, and has at least a pair of alternating first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity. A lateral insulation layer is formed on the side of the substrate and the light emitting structure. The LED of the invention effectively collimate undesirably-directed light rays, which may be otherwise extinguished, to maximize luminous efficiency, and are protected by the dielectric mirror layer formed on the side thereof to remarkably improve ESD characteristics.
Description
- This application is a divisional application of U.S. application Ser. No. 10/870,467 filed Jun. 18, 2004, which claims priority from Korean Patent Application No. 2003-95172 filed Dec. 23, 2003, which is incorporated herein by reference in its entirety.
- 1. Field of the Invention
- The present invention relates to a nitride semiconductor light emitting diode, and more particularly, to a nitride semiconductor light emitting diode and a fabrication method thereof, in which a high reflectivity layer is formed to minimize light loss as well as achieve excellent electrostatic discharge characteristics.
- 2. Description of the Related Art
- As well-known in the art, Nitride semiconductor Light Emitting Diodes (LEDs) are being spotlighted as high power optical devices capable of generating single wavelength light such as blue or green light to realize full color display. A nitride semiconductor LED is made by growing single crystal semiconductor expressed as a formula of AlxInyGa(1-x-y)N (wherein 0≦x≦1, 0≦y≦1 and 0≦x+y≦1) on a specific substrate of for example sapphire for growing GaN.
- Unlike a GaAs-based red LED that has electrodes formed on the underside of a substrate, the sapphire substrate as a representative substrate for growing GaN has two electrodes formed on crystallized semiconductor layers as shown in
FIG. 1 a because it is insulated. - Referring to
FIG. 1 a, anitride semiconductor LED 10 includes asapphire substrate 11, a firstnitride semiconductor layer 13, anactive layer 15 and a secondnitride semiconductor layer 17 formed in their order on thesapphire substrate 11. Further, in order to form two electrodes on the semiconductor layers as described above, predetermined regions of the secondnitride semiconductor layer 17 and theactive layer 15 are etched to form a general mesa structure. Thefirst electrode 18 a is arranged on the exposed region of the firstnitride semiconductor layer 13, and thesecond electrode 18 b is arranged on thesecond nitride semiconductor 17. - The
nitride semiconductor LED 10, as shown inFIG. 1 a, can be loaded on a Printed Circuit Board (PCB) 21 and then covered withresin 28 to form anLED package 20. A circuit pattern including first and secondconductive patterns PCB 21, theLED 10 is attached to the secondconductive pattern 22 b via aconductive paste layer 16, and theelectrodes LED 10 are connected to the first and secondconductive patterns wires - In the package shown in
FIG. 1 b, light rays generated from the nitride semiconductor LED are projected not only in desirable upward directions but also in downward directions through the transparent sapphire substrate. Light rays directed downward are partially absorbed and extinguished or partially reach theconductive paste layer 16 bonding theLED 10 with the secondconductive pattern 22 b that reflects the light rays upward. However, because theconductive paste layer 16 itself does not define an irregular surface, high reflectivity can be rarely expected from theconductive paste layer 16 even though it is made of a high reflectivity material such as Ag. Rather, the light rays are scattered from the irregular surface to disappear. - Accordingly, there have been required in the art nitride semiconductor LEDs and a fabrication method thereof which can minimize light loss as well as maximize luminous efficiency by using a suitable reflector structure.
- Therefore the present invention has been made to solve the foregoing problems of the prior art.
- It is therefore an object of the present invention to provide a nitride semiconductor LED which can utilize high reflectivity characteristics of a dielectric mirror layer to minimize light loss as well as insulation properties thereof to remarkably improve electrostatic discharge characteristics.
- It is another object of the present invention to provide a wafer-level fabrication method of nitride semiconductor LEDs.
- According to an aspect of the invention for realizing the above objects, there is provided a nitride semiconductor Light Emitting Diode (LED) comprising: a transparent substrate for growing nitride semiconductor single crystal thereon; a light emitting structure including a first nitride semiconductor layer, an active region a second nitride semiconductor layer formed in their order on the substrate; a dielectric mirror layer formed on the underside of the substrate and having at least a pair of first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity, the first and second dielectric films being laminated on each other in an alternating fashion; and a lateral insulation layer formed on the side of the substrate and the light emitting structure.
- It is preferred that the lateral insulation layer comprises a dielectric mirror layer equal to the dielectric mirror layer formed on the underside of the substrate. It is preferred that the first and second dielectric films comprise oxide or nitride containing one element selected from a group including Si, Zr, Ta, Ti and Al. It is also preferred that each of the first and second dielectric films has a thickness of about 300 to 900 Å.
- Representatively, each of the first and second dielectric films may comprise a SiO2 film or a Si3N4 film, wherein the SiO2 film may have a thickness of about 600 to 600 Å, and the Si3N4 film has a thickness of about 400 to 600 Å.
- According to the present invention, the dielectric mirror layer preferably may have a reflectivity of at least 90%, and more preferably a reflectivity of at least 95%.
- According to an aspect of the invention for realizing the above objects, there is provided a wafer-level fabrication method of nitride semiconductor Light Emitting Diodes (LEDs), the method comprising the following steps of: preparing a transparent wafer for growing single crystal nitride semiconductor thereon; forming a light emitting structure including a first nitride semiconductor layer, an active layer and a second nitride semiconductor layer laminated in their order on the wafer; cutting the wafer together with the light emitting structure into the size of LED to expose the side of each LED; and laminating at least one alternating pair of first and second dielectric materials on the side and the underside of the LED, the first dielectric material having a first refractivity and the second dielectric material having a second refractivity larger than the first refractivity, whereby the first and second dielectric materials are laminated at least on the underside of the LED to form a dielectric mirror layer.
- It is preferred that the step of cutting the wafer together with the light emitting structure into the size of LED may include: attaching a tape on the light emitting structure, cutting the wafer from the underside into LEDs and stretching the tape to sufficiently expose the side of the cut LEDs.
- It is also preferred that the first and second dielectric materials are laminated on the side of the LED at substantially same thickness and number as the first and second dielectric materials on the underside of the LED to form a dielectric mirror layer.
- The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
-
FIG. 1 a is a sectional view illustrating a conventional nitride semiconductor LED; -
FIG. 1 b is an LED package incorporating the LED inFIG. 1 a; -
FIG. 2 a is a sectional view illustrating a nitride semiconductor LED according to a first embodiment of the invention; -
FIG. 2 b is a magnification of the part A inFIG. 2 a for illustrating the sectional configuration of a multilayer mirror structure adopted to the LED; -
FIG. 3 is a sectional view illustrating a package having the semiconductor LED according to the invention; and -
FIGS. 4 a to 4 e are sectional views illustrating a fabrication method of nitride semiconductor LEDs according to the invention. -
FIG. 5 is a graph showing Optical Power of the present example and the comparative example. - Hereinafter the present invention will be described in more detail with reference to the accompanying drawings.
-
FIG. 2 a is a sectional view illustrating a nitride semiconductor LED according to a first embodiment of the invention. - Referring to
FIG. 2 a, anitride semiconductor LED 30 includes atransparent substrate 31 for growing nitride semiconductor thereon, a firstnitride semiconductor substrate 33, an active region orlayer 35 and a secondnitride semiconductor layer 37 formed in their order on thesubstrate 31. The first andsecond electrodes nitride semiconductor layer 33 exposed by mesa etching and thesecond semiconductor layer 35. - For example, the
transparent substrate 31 may be made of sapphire, and the firstnitride semiconductor layer 33 may be formed of an n-doped GaN layer. Theactive layer 35 maybe formed of an undoped InGaN layer of a multi-quantum well structure, and the secondnitride semiconductor layer 37 may be formed of a p-doped GaN layer and a p-doped AlGaN layer. - The
nitride semiconductor LED 30 of the invention includes adielectric mirror layer 39 formed on both the side and the underside. As shown inFIG. 3 b, thedielectric mirror layer 39 has three pairs of alternating first and second dielectric materials orfilms dielectric films 39 a have a first refractivity, and the seconddielectric films 39 b have a second refractivity higher than the first refractivity. The material type, thickness and alternating number (i.e., the number of pairs) of thedielectric mirror layer 39 can be so set that thedielectric mirror layer 39 has a suitable reflectivity according to oscillation wavelength. - Preferably, the
dielectric films dielectric mirror layer 39 adopted in the invention can have a reflectivity of about 80%, preferably 90%, and more preferably 98%. - Each of the first and second
dielectric films TABLE 1 Oscillation Re- Number of Re- wavelength Material Thickness fractivity Pairs flectivity 390 nm SiO2 663 1.47 6 98 Si3N4 469 2.0787 450 nm SiO2 765 1.47 6 98.5 Si3N4 547 2.0547 470 nm SiO2 799 1.47 6 98 Si3N4 573 2.0489 - It is reported that the
dielectric mirror layer 39 composed according to conditions in Table 1 above has a high reflectivity of at least 98% with respect to an oscillation wavelength range from 390 to 470 nm. Instead of being scattered or absorbed from/into a defective reflective surface, the most of light directed downward in the diode is reflected upward by the dielectric mirror layer of the invention. - The semiconductor LED of the invention also has an insulation layer formed on the side. This lateral insulation layer provides protection to the outside surface of the diode as well as the electrically-insulated dielectric mirror layer. That is, although an LED with an exposed lateral portion may be destructed by surge voltage, the
LED 30 shown inFIG. 2 a can have excellent reliability of fine Electrostatic Discharge (ESD) characteristics because the insulation layer is formed also on the side. - The lateral insulation layer may be formed of an insulating material different from that of the dielectric mirror layer only on the side of the LED, separate from the formation of the dielectric mirror layer. Alternatively, the lateral insulation layer on the side of the LED may be formed simultaneous with the
dielectric mirror layer 39, with the same dielectric mirror layer as thedielectric mirror layer 39. -
FIG. 3 is a sectional view illustrating a package having the semiconductor LED according to the invention. - Referring to
FIG. 3 , a nitridesemiconductor LED package 40 includes aPCB 41, anitride semiconductor LED 30 mounted on thePCB 41 and 1transparent resin structure 48 formed around theLED 30 mounted on thePCB 41. - The
PCB 41 includes first and secondconductive patterns LED 30 has adielectric mirror layer 39 formed beneath and around theLED 30, and is bonded onto the secondconductive pattern 42 b via an adhesive (not shown) made of conductive paste such as Ag. Further, theLED 30 has electrodes (e.g., 38 b and 38 a inFIG. 2 a) which are connected respectively to the first and secondconductive patterns - In the
package 40 adopting theLED 30 of the invention, even if directed downward through a transparent sapphire substrate, a light ray a generated from thenitride semiconductor LED 30 is not scattered or absorbed from/into a reflective surface, which is uneven owing to the adhesive, but reflects upward from the high reflectivitydielectric mirror layer 39. Also, because thedielectric mirror layer 39 is formed around the lateral portion of theLED 30 of the invention, a light ray b directed toward the lateral portion can be re-reflected upward. Therefore, the invention effectively forms the high reflectivity dielectric mirror layer also on the side of the LED - As a result, the LED of the invention has the high reflectivity dielectric mirror layer formed up to the side of the LED to minimize substantial extinction of undesirably directed light rays thereby maximizing resultant luminous efficiency. Further, the LED of the invention is protected at both the side and the underside by the electrically-insulated dielectric mirror layer to improve ESD characteristics.
-
FIGS. 4 a to 4 e are sectional views illustrating a fabrication method of a plurality of nitride semiconductor LEDs according to the invention. The wafer-level fabrication process of nitride semiconductor LEDs will provide more apparent understanding to an advantage of the invention that further facilitates the formation of the dielectric mirror layer of the invention. - As shown in
FIG. 4 a, alight emitting structure 105 including a first nitride semiconductor layer, an active layer and a second nitride semiconductor layer is formed on atransparent wafer 101 of for example sapphire for growing nitride thereon. In a following step, thesapphire wafer 101 together with thelight emitting structure 105 can be divided intorespective unit LEDs 110 as indicated with dotted lines. - Then, in each
unit LED 110, afirst electrode 111 a is formed on an exposed region of the first nitride semiconductor layer, which is exposed via mesa etching, and asecond electrode 111 b is formed on the second nitride semiconductor layer as shown inFIG. 4 b. For example, a p-electrode can be provided by forming a transparent electrode layer on the p-doped nitride semiconductor layer and then a bonding metal on the transparent electrode layer. - Then, the wafer having the light emitting structure is cut according to the size of unit LED exposing the side of the unit LEDs, which in turn are provided at the side and the underside with suitable dielectric mirror layers made of a desired dielectric material. Preferably, this process can be performed according to the steps as shown in
FIGS. 4 c to 4 e, starting with the step of attaching atape 120 on the light emitting structure. A resultant structure attached with thetape 120 is placed with the upside down so as to facilitate the following cutting step. - Then, as shown in
FIG. 4 d, the cutting step is performed from the underside of the wafer to divide the resultant structure into the unit LEDs, and the tape is stretched to expose the side of the cut unit LEDs. A first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity are laminated alternating with each other for at least one time on the side and the underside of the unit LEDs. The lamination is performed to suitably form the first and second dielectric films with a desired thickness in order to realize the dielectric mirror layers. - The dielectric layer lamination as shown in
FIG. 4 d provides a plurality ofLEDs 110 each having adielectric mirror layer 119 on the side and the underside, in which thedielectric mirror layer 119 includes the first dielectric film of the first refractivity and the second dielectric film of the second refractivity. This embodiment illustrates that the samedielectric mirror layer 119 is also formed on the side of the each LED by adopting a desired process and material capable of sufficiently overcoming step coverage. This structure can improve the reflectivity at the side of the LED to further raise the luminous efficiency. On the other hand, although the reflection effect of the dielectric mirror layer cannot be expected because the dielectric films are not formed with suitable thickness on the side of the LED, the dielectric mirror layer coated on the side of the LED can function as a desirable insulation layer to improve ESC characteristics of the LED so that high reliability LEDs can be expected. - To demonstrate the improvement of brightness in the present invention, GaN LED according to the present invention was produced.
- First, n-type GaN layer, InGaN/GaN MQW active layer and p-type GaN layer were grown on a sapphire substrate sequentially. Then, 7 pairs of Al2O3 film and Si3N4 film were formed as the present dielectric mirror layer on bottom and side surfaces of the resulting structure as the LED shown in
FIG. 2A . In this example, the thickness of Al2O3 film was about 700 Å and the thickness of Si3N4 film was about 540 Å. - GaN LED of this comparative example is made in the same manner and material as the above example except that the dielectric mirror layer was employed.
- Then, the optical power of each LED was measured using a chip prober(OPTO corp. Japan). The result is shown in
FIG. 5 . Referring toFIG. 5 , it can be observed that the LED according to the present example shows more optical power(increased about 90.2%) than that of the comparative example. - While the present invention has been described with reference to the particular illustrative embodiments and the accompanying drawings, it is not to be limited thereto but will be defined by the appended claims. It is to be appreciated that those skilled in the art can substitute, change or modify the embodiments into various forms without departing from the scope and spirit of the present invention.
- According to the present invention as set forth above, the high reflectivity dielectric mirror layer including the alternating pair of dielectric films having different refractivities is formed on both the side and the underside of the LED to effectively collimate undesirably-directed light rays, which may be otherwise extinguished, thereby maximizing luminous efficiency. Furthermore, the dielectric mirror layer can also protect the side of the LED to remarkably improve ESD characteristics of the LED.
Claims (9)
1. A wafer-level fabrication method of nitride semiconductor Light Emitting Diodes (LEDs), the method comprising the following steps of:
preparing a transparent wafer for growing single crystal nitride semiconductor thereon;
forming a light emitting structure including a first nitride semiconductor layer, an active layer and a second nitride semiconductor layer laminated in their order on the wafer;
cutting the wafer together with the light emitting structure into the size of LED to expose the side of each LED; and
laminating at least one alternating pair of first and second dielectric materials on the side and the underside of the LED, the first dielectric material having a first refractivity and the second dielectric material having a second refractivity larger than the first refractivity,
whereby the first and second dielectric materials are laminated at least on the underside of the LED to form a dielectric mirror layer.
2. The wafer-level fabrication method of nitride semiconductor LEDs according to claim 1 , wherein the step of cutting the wafer together with the light emitting structure into the size of LED includes: attaching a tape on the light emitting structure, cutting the wafer from the underside into LEDs and stretching the tape to sufficiently expose the side of the cut LEDs.
3. The wafer-level fabrication method of nitride semiconductor LEDs according to claim 1 , wherein the first and second dielectric materials are laminated on the side of the LED at substantially same thickness and number as the first and second dielectric materials on the underside of the LED to form a dielectric mirror layer.
4. The wafer-level fabrication method of nitride semiconductor LEDs according to claim 1 , wherein the first and second dielectric materials comprise oxide or nitride containing one element selected from a group including Si, Zr, Ta, Ti and Al.
5. The wafer-level fabrication method of nitride semiconductor LEDs according to claim 1 , wherein each of the first and second dielectric films forms a film having a thickness of about 300 to 900 Å.
6. The wafer-level fabrication method of nitride semiconductor LEDs according to claim 1 , wherein each of the first and second dielectric materials comprises a SiO2 film or a Si3N4 film.
7. The wafer-level fabrication method of nitride semiconductor LEDs according to claim 5 , wherein the SiO2 film has a thickness of about 600 to 600 Å, and the Si3N4 film has a thickness of about 400 to 600 Å.
8. The wafer-level fabrication method of nitride semiconductor LEDs according to claim 1 , wherein the dielectric mirror layer has a reflectivity of at least 90%.
9. The wafer-level fabrication method of nitride semiconductor LEDs according to claim 8 , wherein the dielectric mirror layer has a reflectivity of at least 95%.
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Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5358880A (en) * | 1993-04-12 | 1994-10-25 | Motorola, Inc. | Method of manufacturing closed cavity LED |
US5799030A (en) * | 1996-07-26 | 1998-08-25 | Honeywell Inc. | Semiconductor device with a laser and a photodetector in a common container |
US20020110169A1 (en) * | 1999-09-13 | 2002-08-15 | Norihiro Iwai | Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array |
US20030001163A1 (en) * | 2000-05-25 | 2003-01-02 | Rohm Co., Ltd. | Semiconductor light emitting device and method for manufacturing the same |
US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
US20030190770A1 (en) * | 2002-04-09 | 2003-10-09 | Oriol, Inc. | Method of etching substrates |
US6643304B1 (en) * | 2000-07-26 | 2003-11-04 | Axt, Inc. | Transparent substrate light emitting diode |
US20040113156A1 (en) * | 2002-11-27 | 2004-06-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method for fabricating the same |
US20040206975A1 (en) * | 2002-06-10 | 2004-10-21 | Tsuyoshi Tojo | Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device |
US20040213315A1 (en) * | 1999-02-17 | 2004-10-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical disk apparatus and optical integrated unit |
US20040238810A1 (en) * | 2001-10-26 | 2004-12-02 | Robert Dwilinski | Nitride semiconductor laser device and manufacturing method therefor |
US6875627B2 (en) * | 1999-09-29 | 2005-04-05 | Xerox Corporation | Structure and method for index-guided buried heterostructure AlGaInN laser diodes |
US6949395B2 (en) * | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
US6960485B2 (en) * | 2000-03-31 | 2005-11-01 | Toyoda Gosei Co., Ltd. | Light-emitting device using a group III nitride compound semiconductor and a method of manufacture |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3326545B2 (en) * | 1994-09-30 | 2002-09-24 | ローム株式会社 | Semiconductor light emitting device |
US6074892A (en) * | 1996-05-07 | 2000-06-13 | Ciena Corporation | Semiconductor hetero-interface photodetector |
FR2753577B1 (en) * | 1996-09-13 | 1999-01-08 | Alsthom Cge Alcatel | METHOD FOR MANUFACTURING A SEMICONDUCTOR OPTOELECTRONIC COMPONENT AND COMPONENT AND MATRIX OF COMPONENTS MANUFACTURED ACCORDING TO THIS METHOD |
US5825796A (en) * | 1996-09-25 | 1998-10-20 | Picolight Incorporated | Extended wavelength strained layer lasers having strain compensated layers |
JP3439063B2 (en) * | 1997-03-24 | 2003-08-25 | 三洋電機株式会社 | Semiconductor light emitting device and light emitting lamp |
JPH11274641A (en) * | 1998-03-19 | 1999-10-08 | Sanyo Electric Co Ltd | Semiconductor element and manufacture thereof |
FR2789496B1 (en) * | 1999-02-10 | 2002-06-07 | Commissariat Energie Atomique | LIGHT EMITTING DEVICE AND GUIDE, WITH AN ACTIVE SILICON REGION CONTAINING RADIATION CENTERS, AND METHOD FOR MANUFACTURING SUCH A DEVICE |
JP3456938B2 (en) | 1999-02-17 | 2003-10-14 | 松下電器産業株式会社 | Semiconductor laser device, optical disk device, and optical integrated device |
JP3723434B2 (en) * | 1999-09-24 | 2005-12-07 | 三洋電機株式会社 | Semiconductor light emitting device |
JP2001345484A (en) * | 2000-06-01 | 2001-12-14 | Seiwa Electric Mfg Co Ltd | Light emitting diode chip and light emitting diode lamp |
JP2002043625A (en) * | 2000-07-19 | 2002-02-08 | Koha Co Ltd | Led |
US6459716B1 (en) * | 2001-02-01 | 2002-10-01 | Nova Crystals, Inc. | Integrated surface-emitting laser and modulator device |
US6707840B2 (en) * | 2001-06-04 | 2004-03-16 | Keith W. Goossen | Vertical cavity surface emitting laser |
JP3956941B2 (en) | 2001-06-15 | 2007-08-08 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device and light emitting device using the same |
US7295589B2 (en) * | 2003-02-15 | 2007-11-13 | Avago Technologies Fiber (Singapore) Pte Ltd | Frequency modulated vertical cavity laser |
-
2003
- 2003-12-23 KR KR1020030095172A patent/KR100576856B1/en active IP Right Grant
-
2004
- 2004-06-16 JP JP2004178842A patent/JP2005183911A/en active Pending
- 2004-06-18 US US10/870,467 patent/US7148514B2/en active Active
-
2006
- 2006-07-20 US US11/458,938 patent/US20060292804A1/en not_active Abandoned
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5358880A (en) * | 1993-04-12 | 1994-10-25 | Motorola, Inc. | Method of manufacturing closed cavity LED |
US5799030A (en) * | 1996-07-26 | 1998-08-25 | Honeywell Inc. | Semiconductor device with a laser and a photodetector in a common container |
US20040213315A1 (en) * | 1999-02-17 | 2004-10-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical disk apparatus and optical integrated unit |
US20020110169A1 (en) * | 1999-09-13 | 2002-08-15 | Norihiro Iwai | Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array |
US6875627B2 (en) * | 1999-09-29 | 2005-04-05 | Xerox Corporation | Structure and method for index-guided buried heterostructure AlGaInN laser diodes |
US6960485B2 (en) * | 2000-03-31 | 2005-11-01 | Toyoda Gosei Co., Ltd. | Light-emitting device using a group III nitride compound semiconductor and a method of manufacture |
US20030001163A1 (en) * | 2000-05-25 | 2003-01-02 | Rohm Co., Ltd. | Semiconductor light emitting device and method for manufacturing the same |
US6643304B1 (en) * | 2000-07-26 | 2003-11-04 | Axt, Inc. | Transparent substrate light emitting diode |
US6949395B2 (en) * | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
US20040238810A1 (en) * | 2001-10-26 | 2004-12-02 | Robert Dwilinski | Nitride semiconductor laser device and manufacturing method therefor |
US20030190770A1 (en) * | 2002-04-09 | 2003-10-09 | Oriol, Inc. | Method of etching substrates |
US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
US20040206975A1 (en) * | 2002-06-10 | 2004-10-21 | Tsuyoshi Tojo | Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device |
US20040113156A1 (en) * | 2002-11-27 | 2004-06-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method for fabricating the same |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8378380B2 (en) | 2006-03-05 | 2013-02-19 | Lg Innotek Co., Ltd. | Nitride semiconductor light-emitting device and method for manufacturing the same |
US20070205429A1 (en) * | 2006-03-05 | 2007-09-06 | Tae Yun Kim | Nitride Semiconductor Light-Emitting Device and Method for Manufacturing the Same |
US8575633B2 (en) | 2008-12-08 | 2013-11-05 | Cree, Inc. | Light emitting diode with improved light extraction |
US7915629B2 (en) | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
US8598609B2 (en) | 2008-12-08 | 2013-12-03 | Cree, Inc. | Composite high reflectivity layer |
US9362459B2 (en) | 2009-09-02 | 2016-06-07 | United States Department Of Energy | High reflectivity mirrors and method for making same |
US8431945B2 (en) | 2010-04-23 | 2013-04-30 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package, and lighting system |
KR20130111996A (en) * | 2012-04-02 | 2013-10-11 | 제이디에스 유니페이즈 코포레이션 | Broadband dielectric reflectors for led |
US20140034986A1 (en) * | 2012-04-02 | 2014-02-06 | Richard A. Bradley, Jr. | Broadband dielectric reflectors for led with varying thickness |
US8889517B2 (en) * | 2012-04-02 | 2014-11-18 | Jds Uniphase Corporation | Broadband dielectric reflectors for LED with varying thickness |
US9099626B2 (en) * | 2012-04-02 | 2015-08-04 | Jds Uniphase Corporation | Broadband dielectric reflectors for LED |
US20130256720A1 (en) * | 2012-04-02 | 2013-10-03 | Jds Uniphase Corporation | Broadband dielectric reflectors for led |
TWI575781B (en) * | 2012-04-02 | 2017-03-21 | 唯亞威方案公司 | Broadband dielectric reflectors for led |
KR102113858B1 (en) | 2012-04-02 | 2020-05-21 | 비아비 솔루션즈 아이엔씨. | Broadband dielectric reflectors for LED |
US9905741B2 (en) | 2013-02-28 | 2018-02-27 | Nichia Corporation | Light emitting device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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US7148514B2 (en) | 2006-12-12 |
KR20050063925A (en) | 2005-06-29 |
KR100576856B1 (en) | 2006-05-10 |
JP2005183911A (en) | 2005-07-07 |
US20050133796A1 (en) | 2005-06-23 |
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