US20020142599A1 - Method and apparatus for etching a workpiece - Google Patents
Method and apparatus for etching a workpiece Download PDFInfo
- Publication number
- US20020142599A1 US20020142599A1 US10/141,969 US14196902A US2002142599A1 US 20020142599 A1 US20020142599 A1 US 20020142599A1 US 14196902 A US14196902 A US 14196902A US 2002142599 A1 US2002142599 A1 US 2002142599A1
- Authority
- US
- United States
- Prior art keywords
- xef
- reservoir
- etching
- gas
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Abstract
An XeF2 source includes an XeF2 source chamber having a tray or ampoule for XeF2 crystals, a reservoir coupled to the XeF2 source chamber via a valve, a flow controller fed by the reservoir and a valve between the reservoir and the flow controller. Pressure sources are provided respectively to maintain the reservoir and the source chamber at the sublimation pressure of XeF2. The arrangement allows for a steady supply of XeF2 to an etching chamber.
Description
- This invention relates to methods and apparatus for etching a workpiece using Xenon Difluoride (XeF2) Xenon Difluoride is a dry isotropic gas phase etchant, which provides a gentle etch for silicon at low temperature. Xenon Difluoride is usually supplied in the form of colourless crystals which sublime without decomposition. The sublimation pressure for XeF2 is approximately 4 Torr.
- Present attempts to use XeF2 for etching have been essentially experimental and have taken place using a pulsed supply of XeF2 which requires the etch to be stopped and started with the etch chamber being pumped down between each etch step. Such an arrangement is impracticable for production processes. Direct flow has been attempted unsuccessfully.
- From one aspect the invention consists in a method of etching a workpiece using XeF2, comprising allowing XeF2 in its solid phase to sublimate into its gaseous state into a reservoir of sufficient volume to provide gas at a predetermined flow rate for a pre-determined etch period, supplying the gas at the desired flow rate to an etching chamber containing the workpiece and etching the workpiece.
- The XeF2 gas may be mixed with an inert carrier gas prior to its introduction into the etch chamber. It is particularly preferred that the XeF2 source continues to sublimate during the outward flow of XeF2 from the reservoir. Additionally or alternatively the reservoir may be recharged between the etching of separate workpieces.
- From a further aspect the invention consists in apparatus for etching a workpiece comprising, an etched chamber, a XeF2 source, a reservoir, valve means for connecting the source to the reservoir to allow sublimination of the source into XeF2 gas, a flow controller for feeding the etch chamber and valve means for connecting the reservoir to the flow controller.
- Preferably the apparatus includes pressure control means for maintaining the reservoir at approximately the sublimination pressure of XeF2 when there is no outward flow from the reservoir. Means may be provided for mixing the XeF2 gas with an inert carrier gas prior to its introduction into the process chamber. It is particularly preferred that the flow controller is a pressure-based flow controller.
- A chamber will normally be provided for the solid XeF2 and conveniently the reservoir may have a volume which is approximately three times the volume of the XeF2 chamber.
- Although the invention has been described above, it is to be understood that it includes any inventive combination of the features set out above or in the following description.
- The invention may be performed in various ways and a specific embodiment will not be described, by way of example, reference to the accompanying drawing, which is a schematic view of etching apparatus.
- Etching apparatus is generally indicated at10 and comprises at
etch chamber 11, a XeF2 supply generally indicated at 12, aflow controller 13, a roughing pump assembly, generally indicated at 14, and acarrier gas supply 15. - The XeF2 supply comprises a XeF2 source chamber 16, which includes a tray or
ampoule 17 for the XeF2 crystals 17 a. Thesource chamber 16 is connected to areservoir 18 via avalve 19, which in turn is connected to theflow controller 13 by avalve 20.Pressure sources reservoir 18 andsource chamber 16 at approximately 4 Torr which is the sublimination pressure of XeF2. Downstream of thecontroller 13 is avalve 23 which connects the flow controller to asupply line 24 betweenvalves supply 15 into thesupply line 24, whilstvalve 26 controls the supply of gases in thesupply line 24 to anetch chamber 27 of theetching apparatus 11. As is conventional the roughingpump installation 14 is connected downstream of theetch chamber 27, but it is also connected to thesource chamber 16 viabypass 28. Aline 29 andvalve 30 allows carrier gas to be supplied to this region for purging purposes. - In this the XeF2 crystals are placed in the ampoule or tray 17 with the
valve 19 closes andvalve 30 open. Carrier gas is used to purge the chamber and the roughingpump assembly 14 pumps the source down to the sublimination pressure. The roughing pump assembly and carrier gas are then isolated andvalve 19 is opened allowing XeF2 gas to expand or diffuse into thereservoir 18. - A wafer is then loaded into the
etch chamber 27 using conventional apparatus andvalves roughing pump assembly 14 and its automaticpressure control valve 14 a. On certain occasions carrier gas may not be required in whichcase valve 25 remains closed. - Valve19 may be open or closed, depending on the process and production levels which are required. A optical detector generally indicated at 31 determines when the etch has been completed or alternatively a time basis may be used. Upon completion of the
etch valves reservoir 18 is re-charged and thus not only can each water be fully etched in one process, continuous etching of wafers is achieved. Continuous delivery of XeF2 also enhances uniformity and the use of a pressure basedflow control mechanism 13 is considerably beneficial over say mass flow measurement. It will be noted that the process chamber pressure control is independent of the flow control mechanism for XeF2.
Claims (9)
1. A method of etching a workpiece using XeF2, comprising allowing solid XeF2 to subliminate into its gaseous state into a reservoir of sufficient volume to provide gas at a pre-determined flow rate for a pre-determined etch period, supplying the gas at the desired flow rate to an etching chamber containing the workpiece and etching the workpiece.
2. A method as claimed in claim 1 wherein XeF2 gas is mixed with an inert carrier gas prior to its introduction into the etch chamber.
3. A method as claimed in claim 1 or claim 2 wherein the XeF2 source continues to subliminate going outward flow from the reservoir.
4. A method as claimed in any one of claims 1 to 3 including recharging the reservoir between etches.
5. A method as claimed in any one of the preceding claims wherein the flow rate is controlled on a pressure basis.
6. Apparatus for etching a workpiece comprising an etch chamber, a XeF2 source, a reservoir, valve means for connecting the source to the reservoir to allow sublimination of the source into XeF2 gas, a flow control of the feeding of the etch chamber and valve means for connecting the reservoir to the flow controller.
7. Apparatus as claimed in claim 6 further including pressure control means for maintaining the reservoir at approximately sublimination pressure of XeF2 when there is no outward flow from the reservoir.
8. Apparatus as claimed in claim 6 or claim 7 further comprising means for mixing the XeF2 gas with an inert carrier gas prior to its introduction into the process.
9. Apparatus as claimed in any one claim 6 to 8 when the flow controller is a pressure based flow controller.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/141,969 US20020142599A1 (en) | 1997-05-13 | 2002-05-10 | Method and apparatus for etching a workpiece |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9709659.8A GB9709659D0 (en) | 1997-05-13 | 1997-05-13 | Method and apparatus for etching a workpiece |
GB9709659.8 | 1997-05-13 | ||
US09/065,622 US6409876B1 (en) | 1997-05-13 | 1998-04-24 | Apparatus for etching a workpiece |
US10/141,969 US20020142599A1 (en) | 1997-05-13 | 2002-05-10 | Method and apparatus for etching a workpiece |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/065,622 Division US6409876B1 (en) | 1997-05-13 | 1998-04-24 | Apparatus for etching a workpiece |
Publications (1)
Publication Number | Publication Date |
---|---|
US20020142599A1 true US20020142599A1 (en) | 2002-10-03 |
Family
ID=10812209
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/065,622 Expired - Lifetime US6409876B1 (en) | 1997-05-13 | 1998-04-24 | Apparatus for etching a workpiece |
US10/141,969 Abandoned US20020142599A1 (en) | 1997-05-13 | 2002-05-10 | Method and apparatus for etching a workpiece |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/065,622 Expired - Lifetime US6409876B1 (en) | 1997-05-13 | 1998-04-24 | Apparatus for etching a workpiece |
Country Status (6)
Country | Link |
---|---|
US (2) | US6409876B1 (en) |
EP (1) | EP0878824A3 (en) |
JP (1) | JP4047970B2 (en) |
KR (1) | KR19980086769A (en) |
DE (1) | DE878824T1 (en) |
GB (1) | GB9709659D0 (en) |
Cited By (2)
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US10790203B2 (en) | 2016-04-26 | 2020-09-29 | Active Layer Parametrics, Inc. | Methods and systems for material property profiling of thin films |
US11289386B2 (en) | 2016-04-26 | 2022-03-29 | Active Layer Parametrics, Inc. | Methods and apparatus for test pattern forming and film property measurement |
Families Citing this family (51)
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US6849471B2 (en) | 2003-03-28 | 2005-02-01 | Reflectivity, Inc. | Barrier layers for microelectromechanical systems |
US6969635B2 (en) | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
DE19919471A1 (en) * | 1999-04-29 | 2000-11-09 | Bosch Gmbh Robert | Process for eliminating defects in silicon bodies by selective etching |
US6942811B2 (en) | 1999-10-26 | 2005-09-13 | Reflectivity, Inc | Method for achieving improved selectivity in an etching process |
US6960305B2 (en) * | 1999-10-26 | 2005-11-01 | Reflectivity, Inc | Methods for forming and releasing microelectromechanical structures |
US6949202B1 (en) * | 1999-10-26 | 2005-09-27 | Reflectivity, Inc | Apparatus and method for flow of process gas in an ultra-clean environment |
US7041224B2 (en) | 1999-10-26 | 2006-05-09 | Reflectivity, Inc. | Method for vapor phase etching of silicon |
US6290864B1 (en) | 1999-10-26 | 2001-09-18 | Reflectivity, Inc. | Fluoride gas etching of silicon with improved selectivity |
US6736987B1 (en) * | 2000-07-12 | 2004-05-18 | Techbank Corporation | Silicon etching apparatus using XeF2 |
US7019376B2 (en) * | 2000-08-11 | 2006-03-28 | Reflectivity, Inc | Micromirror array device with a small pitch size |
US6887337B2 (en) * | 2000-09-19 | 2005-05-03 | Xactix, Inc. | Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto |
WO2002050883A1 (en) | 2000-12-18 | 2002-06-27 | Sumitomo Precision Products Co., Ltd | Cleaning method and etching method |
AU2002303842A1 (en) * | 2001-05-22 | 2002-12-03 | Reflectivity, Inc. | A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
US7189332B2 (en) | 2001-09-17 | 2007-03-13 | Texas Instruments Incorporated | Apparatus and method for detecting an endpoint in a vapor phase etch |
US6965468B2 (en) | 2003-07-03 | 2005-11-15 | Reflectivity, Inc | Micromirror array having reduced gap between adjacent micromirrors of the micromirror array |
US7027200B2 (en) | 2002-03-22 | 2006-04-11 | Reflectivity, Inc | Etching method used in fabrications of microstructures |
JP4694201B2 (en) | 2002-09-20 | 2011-06-08 | インテグレイテッド ディーエヌエイ テクノロジーズ インコーポレイテッド | Anthraquinone quenching dyes, their production and use |
US7781850B2 (en) | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
US6913942B2 (en) | 2003-03-28 | 2005-07-05 | Reflectvity, Inc | Sacrificial layers for use in fabrications of microelectromechanical devices |
TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
US6980347B2 (en) * | 2003-07-03 | 2005-12-27 | Reflectivity, Inc | Micromirror having reduced space between hinge and mirror plate of the micromirror |
US7645704B2 (en) * | 2003-09-17 | 2010-01-12 | Texas Instruments Incorporated | Methods and apparatus of etch process control in fabrications of microstructures |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US7708859B2 (en) * | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
US20070066038A1 (en) | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
GB0413554D0 (en) * | 2004-06-17 | 2004-07-21 | Point 35 Microstructures Ltd | Improved method and apparartus for the etching of microstructures |
US20060022136A1 (en) * | 2004-07-29 | 2006-02-02 | Moore Thomas M | Multiple gas injection system for charged particle beam instruments |
US7684104B2 (en) | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
EP1866074A4 (en) * | 2005-03-16 | 2017-01-04 | Entegris Inc. | System for delivery of reagents from solid sources thereof |
CN101558477B (en) | 2005-08-23 | 2012-05-30 | 埃克提斯公司 | Pulsed etching cooling |
CN101336312B (en) * | 2005-12-01 | 2011-07-06 | 埃克提斯公司 | Pulsed-continuous etching |
US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
JP2010503977A (en) * | 2006-04-26 | 2010-02-04 | アドバンスト テクノロジー マテリアルズ,インコーポレイテッド | Cleaning method for semiconductor processing system |
US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
WO2008103632A2 (en) * | 2007-02-20 | 2008-08-28 | Qualcomm Mems Technologies, Inc. | Equipment and methods for etching of mems |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7569488B2 (en) * | 2007-06-22 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | Methods of making a MEMS device by monitoring a process parameter |
JP2010534865A (en) | 2007-07-25 | 2010-11-11 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | MEMS display device and method for manufacturing the same |
WO2009028114A1 (en) * | 2007-08-31 | 2009-03-05 | Ulvac, Inc. | Etching system |
JP2009149959A (en) * | 2007-12-21 | 2009-07-09 | Ulvac Japan Ltd | Etching system, and etching method |
CN101981661A (en) | 2008-02-11 | 2011-02-23 | 高级技术材料公司 | Ion source cleaning in semiconductor processing systems |
US8394454B2 (en) * | 2008-03-08 | 2013-03-12 | Omniprobe, Inc. | Method and apparatus for precursor delivery system for irradiation beam instruments |
JP5144352B2 (en) * | 2008-04-22 | 2013-02-13 | 株式会社アルバック | Etching device |
US8023191B2 (en) * | 2008-05-07 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Printable static interferometric images |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
EP2872669A4 (en) | 2012-07-13 | 2016-03-23 | Omniprobe Inc | Gas injection system for energetic-beam instruments |
WO2024057509A1 (en) * | 2022-09-15 | 2024-03-21 | 日本碍子株式会社 | Xef2 dry-etching system and process |
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US4190488A (en) * | 1978-08-21 | 1980-02-26 | International Business Machines Corporation | Etching method using noble gas halides |
US4478677A (en) * | 1983-12-22 | 1984-10-23 | International Business Machines Corporation | Laser induced dry etching of vias in glass with non-contact masking |
JPS61134019A (en) * | 1984-12-05 | 1986-06-21 | Nec Corp | Formation of pattern |
WO1991017284A1 (en) * | 1990-04-30 | 1991-11-14 | International Business Machines Corporation | Apparatus for low temperature cvd of metals |
US5198390A (en) | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
JP2833946B2 (en) * | 1992-12-08 | 1998-12-09 | 日本電気株式会社 | Etching method and apparatus |
US5340437A (en) * | 1993-10-08 | 1994-08-23 | Memc Electronic Materials, Inc. | Process and apparatus for etching semiconductor wafers |
US5726480A (en) | 1995-01-27 | 1998-03-10 | The Regents Of The University Of California | Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same |
EP0729175A1 (en) | 1995-02-24 | 1996-08-28 | International Business Machines Corporation | Method for producing deep vertical structures in silicon substrates |
GB9616225D0 (en) | 1996-08-01 | 1996-09-11 | Surface Tech Sys Ltd | Method of surface treatment of semiconductor substrates |
JP3417239B2 (en) * | 1997-01-17 | 2003-06-16 | 三菱電機株式会社 | Manufacturing method of microelectromechanical device |
-
1997
- 1997-05-13 GB GBGB9709659.8A patent/GB9709659D0/en not_active Ceased
-
1998
- 1998-04-24 EP EP98303196A patent/EP0878824A3/en not_active Withdrawn
- 1998-04-24 DE DE0878824T patent/DE878824T1/en active Pending
- 1998-04-24 US US09/065,622 patent/US6409876B1/en not_active Expired - Lifetime
- 1998-05-06 KR KR1019980016054A patent/KR19980086769A/en not_active Application Discontinuation
- 1998-05-12 JP JP12845398A patent/JP4047970B2/en not_active Expired - Lifetime
-
2002
- 2002-05-10 US US10/141,969 patent/US20020142599A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10790203B2 (en) | 2016-04-26 | 2020-09-29 | Active Layer Parametrics, Inc. | Methods and systems for material property profiling of thin films |
US11289386B2 (en) | 2016-04-26 | 2022-03-29 | Active Layer Parametrics, Inc. | Methods and apparatus for test pattern forming and film property measurement |
US11699622B2 (en) | 2016-04-26 | 2023-07-11 | Active Layer Parametrics, Inc. | Methods and apparatus for test pattern forming and film property measurement |
Also Published As
Publication number | Publication date |
---|---|
GB9709659D0 (en) | 1997-07-02 |
EP0878824A3 (en) | 2000-01-19 |
KR19980086769A (en) | 1998-12-05 |
US6409876B1 (en) | 2002-06-25 |
JPH10317169A (en) | 1998-12-02 |
EP0878824A2 (en) | 1998-11-18 |
JP4047970B2 (en) | 2008-02-13 |
DE878824T1 (en) | 1999-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |