US20010050142A1 - Chemical-mechanical polishing apparatus with megasonic energy slurry supply system - Google Patents
Chemical-mechanical polishing apparatus with megasonic energy slurry supply system Download PDFInfo
- Publication number
- US20010050142A1 US20010050142A1 US09/444,474 US44447499A US2001050142A1 US 20010050142 A1 US20010050142 A1 US 20010050142A1 US 44447499 A US44447499 A US 44447499A US 2001050142 A1 US2001050142 A1 US 2001050142A1
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- US
- United States
- Prior art keywords
- slurry
- pipe
- polishing
- polishing pad
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
Definitions
- the present invention relates to apparatus for manufacturing semiconductor, more particularly to apparatus for chemical-mechanical polishing process.
- CMP Chemical-mechanical polishing
- the method is used to achieve a planar surface over the entire chip and wafer, referred to as “global planarity”. It consists of a rotating holder that holds the wafer, an appropriate slurry, and a polishing pad that is applied to the wafer at a specified pressure.
- CMP is not limited to dielectrics. It is used to planarize deep and shallow trenches filled with polysilicon or oxide, and various metal films.
- Polishing results from a combination of chemical and mechanical effects.
- a suggested mechanism for CMP involves the formation of a chemically altered layer at the surface of the material being polished. This layer is mechanically removed from the surface, beginning the process again.
- the altered layer may be a hydrated oxide that can be mechanically removed or, for metal polishing, a metal oxide may be formed and removed.
- the slurry composition and pad pressure determine the polishing rate.
- the hardness of the polishing particles should be about the same as the hardness of the film being polished to avoid damaging the film.
- the particle size should be uniform, commonly less than 0.1 ⁇ m in the diameter, and the solution free of metallic contaminants.
- Slurry typically consists of an abrasive component and a component that chemically interacts with the surface.
- a typical oxide polishing slurry may consist of a colloidal suspension of oxide particles, with and average size of 0.03 ⁇ m, in an alkali solution (pH ⁇ 10).
- a polishing rate of about 0.12 ⁇ m/min can be achieved with this solution.
- polishing pads/cloths are available. They are typically grouped by their mechanical properties. Hard pads produce better planarity, while soft pads achieve better uniformity and less surface damage. The choice of pads is application dependent. For example, while soft pads are used for flat silicon substrates to avoid scratches, these pads are often not suitable for surfaces containing patterns.
- polishing particles in the slurry such as SiO 2
- SiO 2 some polishing particles in the slurry, such as SiO 2
- the gel or larger grain can usually damage the polished surface of wafer.
- the aggregation is due to the static and the gelling effects.
- a mechanism for performing chemical-mechanical polishing, that substantially prevents the damages on polished surface of wafer during CMP.
- the mechanism includes: a pump for forcing slurry to be flown inward to receive the slurry from a supply reservoir; a first pipe having a first end, coupled to an outlet of the forcing means through which the forced slurry flows therein; a megasonic generator, coupled in approximately midway of the first pipe and surrounded the first pipe; a second pipe coupled to a second end of the first pipe, for further conducting the slurry and then exhausting the slurry through an outlet of the second pipe; a polishing pad onto which the slurry from the second pipe is dropped; a polishing table underlying the polishing pad for supporting the polishing pad; and a wafer holder, located above the polishing pad, for fixing the wafer to the wafer holder while in rotational movement with respect to the polishing pad.
- FIG. 1 shows the chemical-mechanical polishing mechanism introduced by the present invention.
- the sonic energy is generally used for cleaning system to loosen particles on wafers.
- the high frequency sonic waves (about 850 kHz) will be generated in the cleaning process.
- the sonic energy can also be used for chemical-mechanical polishing (CMP) to prevent the situation of polishing particles aggregating together.
- CMP chemical-mechanical polishing
- a chemical-mechanical polishing mechanism including a megasonic energy slurry supply system is provided.
- a megasonic generator 12 is added to the slurry supply system of the conventional CMP mechanism.
- the slurry includes polishing particles and a solution.
- Each of the polishing particles has the size about less than 0.1 ⁇ m in the diameter, and its selected material is according as the polished object.
- a typical peristalsis pump 10 forces slurry to be flown inward to receive the slurry from a supply reservoir.
- a first pipe 11 having a first end is coupled to an outlet of the peristalsis pump 10 through which the forced slurry flows therein.
- the first pipe 11 has an interior passage way configured to conduct the slurry.
- a megasonic generator 12 which can generate megasonic or sonic wave, is coupled in approximately midway of the first pipe 11 and surrounded the first pipe 11 .
- the generated megasonic or sonic wave transmits into and affecting the slurry in the interior passage way of the first pipe 11 , thereby grain size of each of the particles in the affected slurry is made small enough or the grains are prevented from being aggregated. Accordingly, the polishing of the chemical-mechanical polishing apparatus can be improved.
- a second pipe 13 coupled to a second end of the first pipe 11 , for further conducting the slurry and then exhausting the slurry through an outlet of the second pipe 13 . Then the slurry from the second pipe 13 is dropped onto a polishing pad 14 , therein, the polishing pad 14 is located under the outlet of the second pipe 13 .
- a wafer 17 under polishing and the polishing pad 14 are in rotational contact such that the dropped slurry facilitates the polishing of the chemical-mechanical polishing apparatus.
- a rotary polishing table 15 underlying the polishing pad 14 is used to support the polishing pad 14 .
- a wafer holder 16 located above the polishing pad 14 , is used to fixing the wafer 17 to the rotary wafer holder 16 while in rotational movement with respect to the polishing pad 14 .
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
An apparatus for chemical-mechanical polishing is disclosed. The apparatus includes the following elements. A pump is used for forcing slurry to be flown inward to receive the slurry from a supply reservoir. A first pipe having a first end, is coupled to an outlet of the forcing means through which the forced slurry flows therein. A megasonic generator coupled in approximately midway of the first pipe and surrounded the first pipe, is used for generating megasonic wave. A second pipe, coupled to a second end of the first pipe, is used for conducting the slurry and then exhausting the slurry through an outlet of the second pipe. A polishing pad, onto that the slurry from the second pipe is dropped, is fixed on a polishing table. The polishing table underlying the polishing pad is used for supporting the polishing pad. A wafer holder, located above the polishing pad, is used for fixing the wafer to the wafer holder while in rotational movement with respect to the polishing pad.
Description
- 1. Field of the Invention
- The present invention relates to apparatus for manufacturing semiconductor, more particularly to apparatus for chemical-mechanical polishing process.
- 2. Description of the Prior Art
- Chemical-mechanical polishing (CMP) is one of the common planarizing techniques. The method is used to achieve a planar surface over the entire chip and wafer, referred to as “global planarity”. It consists of a rotating holder that holds the wafer, an appropriate slurry, and a polishing pad that is applied to the wafer at a specified pressure. CMP is not limited to dielectrics. It is used to planarize deep and shallow trenches filled with polysilicon or oxide, and various metal films.
- Polishing results from a combination of chemical and mechanical effects. A suggested mechanism for CMP involves the formation of a chemically altered layer at the surface of the material being polished. This layer is mechanically removed from the surface, beginning the process again. For example, in SiO2 polishing, the altered layer may be a hydrated oxide that can be mechanically removed or, for metal polishing, a metal oxide may be formed and removed.
- The slurry composition and pad pressure determine the polishing rate. Oxide films, for example, polish twice as fast in a slurry with pH=11 than with pH=7. The hardness of the polishing particles should be about the same as the hardness of the film being polished to avoid damaging the film. The particle size should be uniform, commonly less than 0.1 μm in the diameter, and the solution free of metallic contaminants. Slurry typically consists of an abrasive component and a component that chemically interacts with the surface. A typical oxide polishing slurry may consist of a colloidal suspension of oxide particles, with and average size of 0.03 μm, in an alkali solution (pH≧10). A polishing rate of about 0.12 μm/min can be achieved with this solution.
- A variety of polishing pads/cloths is available. They are typically grouped by their mechanical properties. Hard pads produce better planarity, while soft pads achieve better uniformity and less surface damage. The choice of pads is application dependent. For example, while soft pads are used for flat silicon substrates to avoid scratches, these pads are often not suitable for surfaces containing patterns.
- Several methods to detect the polish end-point are being investigated. Some of them rely on the change in frictional forces between pad and polished surface. The most widely used method is, however, to measure the thickness of the polished film at several intervals between polishing and determine the time needed to achieve the required polished thickness.
- During the polishing process, some polishing particles in the slurry, such as SiO2, are easily aggregated together and then become a gel or a larger grain that has the size more than 0.5 μm. Unfortunately, the gel or larger grain can usually damage the polished surface of wafer. The aggregation is due to the static and the gelling effects.
- For the foregoing reason, there is a need to develop an apparatus, that can avoid the aggregation of the polishing particles in the slurry during polishing process.
- In accordance with the present invention, a mechanism is provided for performing chemical-mechanical polishing, that substantially prevents the damages on polished surface of wafer during CMP. In one embodiment, the mechanism includes: a pump for forcing slurry to be flown inward to receive the slurry from a supply reservoir; a first pipe having a first end, coupled to an outlet of the forcing means through which the forced slurry flows therein; a megasonic generator, coupled in approximately midway of the first pipe and surrounded the first pipe; a second pipe coupled to a second end of the first pipe, for further conducting the slurry and then exhausting the slurry through an outlet of the second pipe; a polishing pad onto which the slurry from the second pipe is dropped; a polishing table underlying the polishing pad for supporting the polishing pad; and a wafer holder, located above the polishing pad, for fixing the wafer to the wafer holder while in rotational movement with respect to the polishing pad.
- The foregoing aspects and many of the attendant advantages of this invention will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:
- FIG. 1 shows the chemical-mechanical polishing mechanism introduced by the present invention.
- In semiconductor manufacturing, the sonic energy is generally used for cleaning system to loosen particles on wafers. The high frequency sonic waves (about 850 kHz) will be generated in the cleaning process. Similarly, to loosen the particles in polishing slurry, the sonic energy can also be used for chemical-mechanical polishing (CMP) to prevent the situation of polishing particles aggregating together.
- In the present invention, a chemical-mechanical polishing mechanism including a megasonic energy slurry supply system is provided. As shown in FIG. 1, mainly, a
megasonic generator 12 is added to the slurry supply system of the conventional CMP mechanism. The slurry includes polishing particles and a solution. Each of the polishing particles has the size about less than 0.1 μm in the diameter, and its selected material is according as the polished object. - In the mechanism of this invention, a
typical peristalsis pump 10 forces slurry to be flown inward to receive the slurry from a supply reservoir. Afirst pipe 11 having a first end is coupled to an outlet of theperistalsis pump 10 through which the forced slurry flows therein. Therein, thefirst pipe 11 has an interior passage way configured to conduct the slurry. A megasonicgenerator 12, which can generate megasonic or sonic wave, is coupled in approximately midway of thefirst pipe 11 and surrounded thefirst pipe 11. Therefore, the generated megasonic or sonic wave transmits into and affecting the slurry in the interior passage way of thefirst pipe 11, thereby grain size of each of the particles in the affected slurry is made small enough or the grains are prevented from being aggregated. Accordingly, the polishing of the chemical-mechanical polishing apparatus can be improved. - Moreover, a
second pipe 13, coupled to a second end of thefirst pipe 11, for further conducting the slurry and then exhausting the slurry through an outlet of thesecond pipe 13. Then the slurry from thesecond pipe 13 is dropped onto apolishing pad 14, therein, thepolishing pad 14 is located under the outlet of thesecond pipe 13. Awafer 17 under polishing and thepolishing pad 14 are in rotational contact such that the dropped slurry facilitates the polishing of the chemical-mechanical polishing apparatus. A rotary polishing table 15 underlying thepolishing pad 14 is used to support thepolishing pad 14. Awafer holder 16, located above thepolishing pad 14, is used to fixing thewafer 17 to therotary wafer holder 16 while in rotational movement with respect to thepolishing pad 14. - Although specific embodiments have been illustrated and described, it will be obvious to those skilled in the art that various modifications may be made without departing from what is intended to be limited solely by the appended claims.
Claims (10)
1. A chemical-mechanical polishing apparatus, comprising:
means for forcing slurry to be flown inward to receive the slurry from a supply reservoir;
a first pipe having a first end coupled to an outlet of said forcing means through which the forced slurry flows therein, wherein said first pipe has an interior passage way configured to conduct the slurry;
means for generating sonic wave, coupled in approximately midway of said first pipe and surrounded said first pipe, therefore said generated sonic wave transmitting into and affecting the slurry in the interior passage way of said first pipe, thereby grain size of the affected slurry is made small enough or the grains of the affected slurry are prevented from being aggregated, thereby improving the polishing of the chemical-mechanical polishing apparatus;
a second pipe, coupled to a second end of said first pipe, for further conducting the slurry and then exhausting the slurry through an outlet of said second pipe;
a polishing pad onto which the slurry from said second pipe is dropped, wherein said polishing pad is located under the outlet of said second pipe, therefore a wafer under polishing and said polishing pad are in rotational contact such that the dropped slurry facilitates the polishing of the chemical-mechanical polishing apparatus;
a polishing table underlying said polishing pad for supporting said polishing pad; and
a wafer holder, located above said polishing pad, for fixing the wafer to said wafer holder while in rotational movement with respect to said polishing pad.
2. The apparatus according to , wherein said forcing means includes a pump.
claim 1
3. The apparatus according to , wherein said pump includes a peristalsis pump.
claim 2
4. The apparatus according to , wherein said generating means includes a megasonic generator.
claim 1
5. The apparatus according to , wherein said polishing table includes a rotary polishing table.
claim 1
6. The apparatus according to , wherein said wafer holder includes a rotary wafer holder.
claim 1
7. A slurry supply system for chemical-mechanical polishing (CMP), comprising:
means for forcing slurry to be flown inward to receive the slurry from a supply reservoir;
a first pipe having a first end coupled to an outlet of said forcing means through which the forced slurry flows therein, wherein said first pipe has an interior passage way configured to conduct the slurry;
means for generating sonic wave, coupled in approximately midway of said first pipe and surrounded said first pipe, therefore said generated sonic wave transmitting into and affecting the slurry in the interior passage way of said first pipe, thereby grain size of the affected slurry is made small enough or the grains of the affected slurry are prevented from being aggregated, thereby improving the polishing of the chemical-mechanical polishing apparatus;
a second pipe, coupled to a second end of said first pipe, for further conducting the slurry and then exhausting the slurry through an outlet of said second pipe;
8. The apparatus according to , wherein said forcing means includes a pump.
claim 7
9. The apparatus according to , wherein said pump includes a peristalsis pump.
claim 7
10. The apparatus according to , wherein said generating and transmitting means includes a megasonic generator.
claim 7
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/444,474 US20010050142A1 (en) | 1999-11-22 | 1999-11-22 | Chemical-mechanical polishing apparatus with megasonic energy slurry supply system |
TW088120649A TW422757B (en) | 1999-11-22 | 1999-11-26 | Chemical mechanical polishing device with ultrasonic slurry supply system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/444,474 US20010050142A1 (en) | 1999-11-22 | 1999-11-22 | Chemical-mechanical polishing apparatus with megasonic energy slurry supply system |
TW088120649A TW422757B (en) | 1999-11-22 | 1999-11-26 | Chemical mechanical polishing device with ultrasonic slurry supply system |
Publications (1)
Publication Number | Publication Date |
---|---|
US20010050142A1 true US20010050142A1 (en) | 2001-12-13 |
Family
ID=26666774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/444,474 Abandoned US20010050142A1 (en) | 1999-11-22 | 1999-11-22 | Chemical-mechanical polishing apparatus with megasonic energy slurry supply system |
Country Status (2)
Country | Link |
---|---|
US (1) | US20010050142A1 (en) |
TW (1) | TW422757B (en) |
-
1999
- 1999-11-22 US US09/444,474 patent/US20010050142A1/en not_active Abandoned
- 1999-11-26 TW TW088120649A patent/TW422757B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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TW422757B (en) | 2001-02-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: UNITED MICROELECTRONICS CORP., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LIN, TSANG-JUNG;REEL/FRAME:010417/0714 Effective date: 19991028 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |