TWI822194B - Wafer cleaning device and method of use - Google Patents

Abstract

The invention discloses a wafer cleaning device and a method of use. The wafer cleaning device includes: a processing chamber, a first gas source, a second gas source located outside the processing chamber, a gas pipe, a remote plasma source and an excitation power supply; The treatment chamber includes a shower head and a base. The shower head is arranged above the inside of the treatment chamber; the base is arranged below the inside of the treatment chamber and is opposite to the shower head; the excitation power supply is connected to the shower head or the base; first The gas source is connected to the shower head in the processing chamber through a remote plasma source and a gas pipe; the first gas source is used to supply the first gas to the remote plasma source or the processing chamber; the second gas source is directly connected to the processing chamber through the gas pipe The second gas source is connected to the shower head in the processing chamber and is used to supply the second gas to the processing chamber. The invention integrates a remote plasma source and an excitation power supply. By selecting the remote plasma source and the excitation power supply to turn on or off, contaminants on the wafer can be removed, thereby meeting different cleaning needs of the wafer.

Description

Wafer cleaning device and method of use

The present invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer cleaning device and a method of use.

In the semiconductor manufacturing process, keeping the wafer surface clean is a key condition for wafer manufacturing, which has a great impact on the yield rate of the wafer. In order to ensure the yield rate of the wafer, the wafer needs to be cleaned in almost every process to remove contaminants on the wafer. For example, contaminants such as natural oxides and carbon on the wafer need to be removed before the deposition process; contaminants such as residual slurry on the wafer need to be removed before the etching process. Especially with the development of microchip manufacturing, the requirements for wafer cleaning are getting higher and higher; however, traditional wafer surface cleaning tools (including wet cleaning and dry cleaning tools) have problems meeting the wafer cleaning requirements. For example, holes and/or trenches with high aspect ratios on the wafer cannot be completely cleaned, so it is necessary to adjust the way contaminants are handled on the wafer.

The object of the present invention is to provide a wafer cleaning device and a method of use, which integrates a remote plasma source, an excitation power supply, and a bias power supply. The wafer can be removed by selecting the remote plasma source, the excitation power supply, and the bias power supply to be turned on or off. The surface, as well as the corresponding contaminants in the holes and grooves with high aspect ratio on the wafer, to meet the different cleaning needs of the wafer.

In order to achieve the above objects, the present invention is achieved through the following technical solutions:

A wafer cleaning device including:

A processing chamber, a first gas source, a second gas source, a gas delivery pipe, a remote plasma source and an excitation power supply located outside the processing chamber;

The treatment chamber includes a shower head and a base, the shower head is arranged above the inside of the treatment chamber; the base is arranged below the inside of the treatment chamber and is opposite to the shower head;

The excitation power supply is connected to the shower head or the base;

The first gas source is connected to the shower head in the processing chamber through the remote plasma source and the gas delivery pipe; the first gas source is used to supply the remote plasma source or the The processing chamber supplies the first gas;

The second gas source is directly connected to the shower head in the processing chamber through the gas pipe, and the second gas source is used to supply a second gas to the processing chamber.

Preferably, the remote plasma source discharges the first gas to generate free radicals.

Preferably, the second gas forms a first mixture with the first gas or the second gas forms a second mixture with the free radicals generated by the remote plasma source;

The gas delivery pipe delivers any one of the first gas, the free radical, the first mixture and the second mixture to the wafer on the base through the shower head.

Preferably, the first gas is a mixed gas of F-containing gas and an inert carrier gas or a mixed gas of H-containing gas and an inert carrier gas;

The second gas is a mixed gas containing H gas and an inert carrier gas.

Preferably, the excitation power supply is a first excitation power supply, and the first excitation power supply is connected to the shower head for ionizing the first gas and/or the second gas to generate a third gas. An in-situ plasma.

Preferably, the wafer cleaning device further includes: a first isolation ring; the first isolation ring is disposed between the shower head and the top of the processing chamber, so that the shower head is in contact with the processing chamber. The processing chambers are insulated.

Preferably, the first excitation power supply is a radio frequency power supply or a direct current power supply.

Preferably, the power of the first excitation power source is continuous or pulsed.

Preferably, the excitation power supply is a second excitation power supply, and the second excitation power supply is connected to the base for ionizing the first gas and/or the second gas to generate a second gas. In situ plasma.

Preferably, the wafer cleaning device further includes: a second isolation ring; the second isolation ring is disposed between the base and the bottom of the processing chamber, so that the base and the processing chamber are Insulation between cavities.

Preferably, the second excitation power source is a radio frequency power source.

Preferably, the wafer cleaning device further includes: a bias power supply; the bias power supply is connected to the base and used to guide the second in-situ plasma onto the wafer.

Preferably, the bias power supply is a DC power supply.

On the other hand, the present invention also provides a method of using the above-mentioned wafer cleaning device, including:

Determine the location of contaminants on the wafer in the processing chamber;

Select to turn on the first gas source or turn on the first gas source and the second gas source at the same time;

Selecting at least one of a remote plasma source or an excitation power source to be turned on or off based on the location of contaminants on the wafer.

Preferably, the contaminants are located on the wafer surface and/or within the first trench,

Selecting both the remote plasma source and the excitation power supply to be turned off so that the first gas or the first mixture formed by the first gas and the second gas cleans the wafer;

Alternatively, it is selected that the remote plasma source is turned on and the excitation power supply is turned off, so that free radicals or a second mixture formed by the free radicals and the second gas clean the wafer.

Preferably, the contamination is located in the second trench of the wafer, and the remote plasma source is selected to be turned off and the first excitation power source is turned on, so that the first in-situ plasma cleans the wafer.

Preferably, the contamination is located in the second trench of the wafer, and the remote plasma source is selected to be turned off and the second excitation power source is turned on, so that the second in-situ plasma cleans the wafer.

Preferably, the bias power is selected to be turned on to guide the second in-situ plasma to the wafer surface and/or into the second trench.

Preferably, the aspect ratio of the first trench is less than 10:1;

The aspect ratio of the second trench is greater than or equal to 10:1.

Compared with the prior art, the present invention has at least one of the following advantages:

The invention provides a wafer cleaning device and a method of use, which integrate a remote plasma source, an excitation power supply and a bias power supply, wherein the excitation power supply is connected to a processing chamber, and the first gas source supplies the first gas source to the remote plasma source or the processing chamber. Gas, so that the corresponding contaminants on the wafer can be removed by selecting the remote plasma source and turning on or off the excitation power, thereby meeting the different cleaning needs of the wafer.

In the present invention, the remote plasma source can discharge the first gas and obtain free radicals to remove contaminants located on the wafer surface and/or in the first trench.

In the present invention, the second gas source directly supplies the second gas to the processing chamber, and the second gas can react with the first gas in the gas delivery pipe to form the first mixture, or the second gas can react with free radicals to form the second mixture, and the reaction obtained The first mixture and the second mixture can remove contaminants located on the wafer surface and/or in the first trench.

In the present invention, the first excitation power supply connected to the shower head in the processing chamber can ionize the first gas and/or the second gas in the processing chamber and generate the first in-situ plasma to remove the third gas located on the wafer. 2. Contaminants in the trench.

In the present invention, the second excitation power supply connected to the base in the processing chamber can ionize the first gas and/or the second gas in the processing chamber and generate a second in-situ plasma to remove the second gas located on the wafer. Contamination in the trench.

In the present invention, the ion sheath can be enlarged by biasing the power supply, resulting in an increase in the bombardment energy of the second in-situ plasma on the second trench, thereby more effectively removing the second trench with a higher aspect ratio. contaminants, thereby improving the cleaning ability of the wafer cleaning device.

A wafer cleaning device and a usage method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use imprecise proportions, and are only used to conveniently and clearly assist in explaining the embodiments of the present invention. In order to make the objects, features and advantages of the present invention more apparent, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to coordinate with the content disclosed in the specification for the understanding and reading of those familiar with this technology, and are not used to limit the implementation of the present invention. conditions, it has no technical substantive significance. Any structural modifications, changes in proportions or adjustments in size should still fall within the scope of the present invention without affecting the efficacy and purpose of the present invention. Within the scope of the disclosed technical content.

It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that these entities or operations are mutually exclusive. any such actual relationship or sequence exists between them. Furthermore, the terms "comprises," "comprises," or any other variations thereof are intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus that includes a list of elements includes not only those elements, but also those not expressly listed other elements, or elements inherent to the process, method, article or equipment. Without further limitation, an element defined by the statement "comprises a..." does not exclude the presence of additional identical elements in a process, method, article, or apparatus that includes the stated element.

As shown in FIGS. 1 to 2 , this embodiment provides a wafer cleaning device, including: a processing chamber 110 , a first gas source 120 located outside the processing chamber 110 , a second gas source 130 , a gas pipe 150 , a remote Plasma source 140 and excitation power supply; the processing chamber 110 includes a shower head 1101 and a base 1102, the shower head 1101 is disposed above the inside of the processing chamber 110; the base 1102 is disposed in the processing chamber 110 is located below the interior and opposite to the shower head 1101; the excitation power supply is connected to the shower head 1101 or to the base 1102; the first gas source 120 passes through the remote plasma source 140, The gas pipe 150 is connected to the shower head 1101 in the processing chamber 110; the first gas source 120 is used to supply the first gas to the remote plasma source 140 or the processing chamber 110; The second gas source 130 is directly connected to the shower head 1101 in the processing chamber 110 through the gas pipe 150; the second gas source 130 is used to supply a second gas to the processing chamber 110.

Please refer to FIGS. 1 and 2 simultaneously, the remote plasma source 140 performs discharge treatment on the first gas to generate free radicals.

It can be understood that in some other embodiments, the second gas and the first gas form a first mixture or the second gas and the free radicals generated by the remote plasma source 140 form a third mixture. Two mixtures; the gas delivery pipe 150 delivers the first gas, the free radicals, the first mixture and the second mixture to the wafer 100 on the base 1102 through the shower head 1101 any kind.

Specifically, in this embodiment, the excitation power supply can ionize the gas transferred into the processing chamber 110 to generate in-situ plasma; and the in-situ plasma, the free radicals, the Both the first gas and the second gas can remove contaminants or impurities on the wafer 100 , thereby cleaning the wafer 100 . More specifically, since the wafer cleaning device integrates the remote plasma source 140 and the excitation power supply, by selecting the remote plasma source 140 and the excitation power supply to be turned on or off, the wafer cleaning device is The circular cleaning device can have multiple working modes to meet different cleaning requirements of the wafer 100 . The multiple working modes may include: one or a combination of a chemical reaction mode, a remote plasma mode and an in-situ plasma mode; wherein, in the chemical reaction mode, the remote plasma source 140 and the excitation power supply If both are turned off, the wafer 100 can be cleaned directly with the first gas or the first mixture formed by the first gas and the second gas; in the remote plasma mode, the remote plasma When the plasma source 140 is turned on and the excitation power supply is turned off, the wafer 100 can be cleaned by the free radicals or the second mixture formed by the free radicals and the second gas; the in-situ plasma In volume mode, when the remote plasma source 140 is turned off and the excitation power supply is turned on, the wafer 100 can be cleaned by the in-situ plasma, but the invention is not limited thereto.

Specifically, in this embodiment, the working mode of the wafer cleaning device can be selected according to the location of the contaminants on the wafer 100 . More specifically, when the contaminants are located on the wafer surface and/or the first trench, that is, when the contaminants are in a position that is easier to clean, the chemical reaction mode or the remote plasma mode can be selected. The wafer 100 is cleaned; the aspect ratio of the first trench is less than 10:1. When the contaminant is located in the second trench of the wafer, that is, when the contaminant is in a position that is difficult to clean, the in-situ plasma mode can be selected to clean the wafer 100; wherein the third The aspect ratio of the two trenches is greater than or equal to 10:1, but the invention is not limited thereto.

Specifically, in this embodiment, the chamber pressure of the processing chamber 110 may be 10 millitorr to 10 torr. A heating device may be provided on the base 1102 for heating the wafer 100 on the base 1102 to improve the cleaning efficiency of the wafer. For example, by heating the wafer 100 in the chemical reaction mode, the reaction rate of the first gas or the first mixture and the contaminants on the wafer 100 can be optimized. , so that the contaminants on the wafer 100 can be quickly removed. In addition, a cooling device can be provided on the base 1102 for cooling the wafer 100 so that the heated wafer 100 can quickly cool down. Preferably, the heating device can heat the wafer to 400°C, and the cooling device can cool the wafer to 25°C, but the invention is not limited thereto.

Please refer to Figure 1 and Figure 2 at the same time. The first gas is a mixed gas containing F gas and an inert carrier gas or a mixed gas containing H gas and an inert carrier gas; the second gas is a mixed gas containing H gas and an inert carrier gas. of mixed gas.

Specifically, in this embodiment, when the first gas is a mixed gas of the H-containing gas and the inert carrier gas, the second gas source 130 may not supply the third gas to the processing chamber 110 . Two gases. When the first gas is a mixed gas of the F-containing gas and the inert carrier gas, the second gas source 130 can supply the second gas to the processing chamber 110, and the second gas The first mixture formed with the first gas or the second mixture formed with the second gas and the free radicals may be formed in the gas delivery pipe 150 . More specifically, the F-containing gas may include NF ₃ , HF, CF ₄ , C ₂ F ₆ , C ₄ F ₆ , C ₄ F ₈ , COF ₂ , SF ₆ , WF ₆ , SiF ₄ , OF _2, etc.; _The inert carrier _gas may include Ar _, He _, Ne, N ₂ , Kr, _and limit.

Specifically, in this embodiment, the composition of the first gas may be determined based on the composition of the contaminant and/or the working mode of the wafer cleaning device. For example, when the component of the pollutant is carbon, the working mode of the wafer cleaning device can be the remote plasma mode, and the first gas can be a mixed gas of H ₂ and Ar, and there is no need to the second gas. When the component of the pollutant is _SiO2 , if the working mode of the wafer cleaning device is the chemical reaction mode, the first gas can be a mixed gas of HF and Ar, and the second gas can be A mixed gas of NH ₃ and Ar; when the composition of the pollutant is also SiO ₂ , if the working mode of the wafer cleaning device is the remote plasma mode, the first gas can be NF ₃ and Ar The second gas may be a mixed gas of NH ₃ and Ar, but the present invention is not limited thereto.

Please continue to refer to Figure 1. In Embodiment 1, the excitation power supply is a first excitation power supply 161, and the first excitation power supply 161 is connected to the shower head 1101 for activating the first gas and/or Or the second gas is ionized to generate a first in-situ plasma.

It can be understood that in some other embodiments, the wafer cleaning device further includes: a first isolation ring 171; the first isolation ring 171 is provided between the shower head 1101 and the processing chamber 110. between the tops of the shower head 1101 and the processing chamber 110 .

In some embodiments, the first excitation power supply 161 is a radio frequency power supply or a DC power supply.

Specifically, when the excitation power supply is the first excitation power supply 161, the working mode of the wafer cleaning device may be the first in-situ plasma mode, and in the first in-situ plasma mode, the The first in-situ plasma cleans the wafer 100 . The power of the first excitation power supply 161 can be continuous or pulsed. When the power of the first excitation power supply 161 is pulsed, due to low energy, the characteristics of the wafer 100 can be reduced. , damage to structures such as trenches, and when the power of the first excitation power supply 161 is pulse power, the duty cycle of the first excitation power supply 161 may be 5% to 90%; in addition, the first excitation power supply 161 The power of 161 is controllable and can be 10~2000W, and the energy of electrons can be 5~15eV. Preferably, the power of the first excitation power supply 161 is pulse power to reduce or eliminate damage to the wafer 100 during the process of removing the contaminants on the wafer 100, but this is not the case in the present invention. is limited.

In this embodiment, when the first excitation power supply 161 is a radio frequency power supply, the radio frequency power supply can be a radio frequency ICP source or a radio frequency CCP source, and the frequency can be 20KHz~60MHz. Since the energy of the radio frequency power supply is greater than the energy of the DC power supply, the density of the first in-situ plasma generated by the radio frequency power supply is greater than the density of the first in-situ plasma generated by the DC power supply. density, the contaminants on the wafer 100 can be better removed.

Please refer to Figure 2. In the second embodiment, the excitation power supply is a second excitation power supply 162, and the second excitation power supply 162 is connected to the base 1102 for stimulating the first gas and/or the The second gas is ionized to generate a second in-situ plasma.

It can be understood that in some other embodiments, the wafer cleaning device further includes: a second isolation ring 172; the second isolation ring 172 is disposed between the base 1102 and the processing chamber 110. between the bottoms to insulate the base 1102 and the processing chamber 110 .

In some embodiments, the second excitation power supply 162 is a radio frequency power supply.

Specifically, in this embodiment, when the excitation power supply is the second excitation power supply 162, the working mode of the wafer cleaning device may be the second in-situ plasma mode, and in the second in-situ plasma mode In the plasma mode, the wafer 100 is cleaned by the second in-situ plasma. The power of the second excitation power supply 162 can be continuous or pulsed. When the power of the second excitation power supply 162 is pulsed, due to low energy, the characteristics of the wafer 100 can be reduced. , damage to structures such as trenches, and when the power of the second excitation power supply 162 is pulse power, the duty cycle of the second excitation power supply 162 may be 5% to 90%; in addition, the second excitation power supply 162 The power of 162 is controllable and can be 10~2000W, and the energy of electrons can be 5~15eV. More specifically, the second excitation power source 162 may be a radio frequency ICP source or a radio frequency CCP source, and the frequency may be 20 KHz~60 MHz. Preferably, the power of the second excitation power supply 162 is pulse power to reduce or eliminate damage to the wafer 100 during the process of removing the contaminants on the wafer 100, but this is not the case in the present invention. is limited.

Please continue to refer to Figure 2. The wafer cleaning device also includes: a bias power supply 180; the bias power supply 180 is connected to the base 1102 and is used to increase the thickness of the ion sheath layer so that the second in-situ The intensity of plasma bombardment increases.

It can be understood that in some other embodiments, the bias power supply 180 is a DC power supply.

Specifically, in this embodiment, the bias power supply 180 is configured such that the working mode of the wafer cleaning device can be the second in-situ plasma+bias mode, and in the second in-situ plasma In the + bias mode, the wafer 100 is also cleaned by the second in-situ plasma. Wherein, the second in-situ plasma can be guided to the surface of the wafer 100 and/or the second trench through the bias power supply 180, so that the second in-situ plasma of the wafer 100 can be removed more effectively. The contaminants in the two trenches are thereby improved to improve the cleaning ability of the wafer cleaning device, but the present invention is not limited thereto.

Specifically, in this embodiment, the power of the bias power supply 180 can be continuous or pulsed; and when the power of the bias power supply 180 is pulse power, the occupancy of the bias power supply 180 The empty ratio can be 5%~90%. Preferably, the power of the bias power supply 180 is pulse power to reduce or eliminate damage to the wafer 100 during the process of guiding the second in-situ plasma, but the present invention is not limited thereto.

On the other hand, this embodiment also provides a method of using the wafer cleaning device as described above, including: step S1, determining the location of contaminants on the wafer 100 in the processing chamber 110 based on the current process. The location may be the wafer. 100, inside the first trench and/or inside the second trench; Step S2, choose to turn on the first gas source 120 or turn on the first gas source 120 and the second gas source 130 at the same time; Step S3, according to the crystal The location of the contaminant on the circle 100 selects whether at least one of the remote plasma source 140 or the excitation power source is turned on or off.

Specifically, in this embodiment, before performing the step S2, the wafer 100 is also placed on the base 1102 of the processing chamber 110, but the invention is not limited thereto.

It can be understood that in some other embodiments, the contaminants are located on the surface of the wafer 100 and/or in the first trench, and both the remote plasma source 140 and the excitation power supply are selected to be turned off. The first gas or the first mixture formed by the first gas and the second gas is used to clean the wafer 100, and at this time, the working mode of the wafer cleaning device is the chemical reaction mode. ; Alternatively, select the remote plasma source 140 to be turned on and the excitation power supply to be turned off, so that free radicals or a second mixture formed by the free radicals and the second gas clean the wafer 100, and this The working mode of the wafer cleaning device is the remote plasma mode.

In some embodiments, the contaminant is located in the second trench of the wafer 100 , the remote plasma source 140 is selected to be turned off and the first excitation power supply 161 is turned on, so that the first in-situ plasma is The wafer is cleaned, and at this time, the working mode of the wafer cleaning device is the first in-situ plasma mode.

In some other embodiments, the contamination is located in the second trench of the wafer 100 , the remote plasma source 140 is selected to be turned off and the second excitation power supply 162 is turned on, so that the second in-situ plasma The wafer 100 is cleaned, and at this time, the working mode of the wafer cleaning device is the second in-situ plasma mode.

In some embodiments, the bias power supply 180 is selected to be turned on to guide the second in-situ plasma to the surface of the wafer 100 and/or into the second trench, and at this time the wafer is cleaned. The working mode of the device is the second in-situ plasma+bias mode.

In some embodiments, the aspect ratio of the first trench is less than 10:1; the aspect ratio of the second trench is greater than or equal to 10:1.

In summary, this embodiment provides a wafer cleaning device and a method of use. The wafer cleaning device integrates a remote plasma source and an excitation power supply. The excitation power supply is connected to the processing chamber, and the first gas source can supply the remote plasma to the process chamber. The source or processing chamber supplies the first gas, so that corresponding contaminants on the wafer can be removed by selecting the remote plasma source and turning on or off the excitation power supply, thereby meeting different cleaning requirements of the wafer. In this embodiment, the remote plasma source can perform discharge treatment on the first gas and obtain free radicals to remove contaminants located on the wafer surface and/or in the first trench; the excitation power source can perform discharge treatment on the gas in the processing chamber. Ionize and generate an in-situ plasma to remove contaminants located within the second trench of the wafer. In addition, in this embodiment, the second gas source can supply the second gas to the processing chamber, and the second gas can form a first mixture with the first gas or the second gas and free radicals can form a second mixture. The first mixture and the second The mixture is capable of removing contaminants located on the wafer surface and/or within the first trench.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and substitutions of the present invention will be apparent to those with ordinary knowledge in the technical field to which this subject belongs after reading the above content. Therefore, the protection scope of the present invention should be limited by the appended patent application scope.

100:wafer 110: Processing chamber 1101:Sprinkler head 1102:Pedestal 120: First gas source 130: Second gas source 140:Remote Plasma Source 150:Gas pipe 161: First excitation power supply 162: Second excitation power supply 171:First isolation ring 172:Second isolation ring 180: Bias power supply

Figure 1 is a schematic structural diagram of a wafer cleaning device when an excitation power supply is connected to a shower head according to Embodiment 1 of the present invention; FIG. 2 is a schematic structural diagram of the excitation power supply and the bias power supply connected to the base in a wafer cleaning device provided in Embodiment 2 of the present invention.

100:wafer

110: Processing chamber

1101:Sprinkler head

1102:Pedestal

120: First gas source

130: Second gas source

140:Remote Plasma Source

150:Gas pipe

161:First excitation power supply

171:First isolation ring

Claims (19)

A wafer cleaning device, which includes: a processing chamber (110), a first gas source (120) located outside the processing chamber (110), a second gas source (130), and a gas delivery pipe (150) , a remote plasma source (140) and an excitation power supply; the processing chamber (110) includes a shower head (1101) and a base (1102), the shower head (1101) is arranged in the processing chamber (110) ) above the interior; the base (1102) is disposed below the interior of the processing chamber (110), opposite to the shower head (1101); the excitation power supply is connected to the shower head (1101) or to the base (1102) ) connection; the first gas source (120) is connected to the shower head (1101) in the processing chamber (110) through the remote plasma source (140) and the gas delivery pipe (150); the first gas source (120) is used to supply a first gas to the remote plasma source (140) or the processing chamber (110); the second gas source (130) directly passes through the gas delivery pipe (150) and the processing chamber (110) The shower head (1101) inside is connected; the second gas source (130) is used to supply a second gas to the processing chamber (110). The wafer cleaning device of claim 1, wherein the remote plasma source (140) performs discharge processing on the first gas to generate a free radical. The wafer cleaning device of claim 2, wherein the second gas and the first gas form a first mixture or the second gas and the free radicals generated by the remote plasma source (140) form a first mixture. Two mixtures; The gas delivery pipe (150) delivers any of the first gas, the free radical, the first mixture and the second mixture to the wafer (100) on the base (1102) through the shower head (1101). One kind. The wafer cleaning device according to claim 3, wherein the first gas is a mixed gas containing F-containing gas and an inert carrier gas or a mixed gas containing H-containing gas and an inert carrier gas; the second gas is a mixed gas containing H-containing gas and an inert carrier gas. A mixture of inert carrier gases. The wafer cleaning device according to claim 1, wherein the excitation power supply is a first excitation power supply (161), and the first excitation power supply (161) is connected to the shower head (1101) for cleaning the wafer. The first gas and/or the second gas are ionized to generate a first in-situ plasma. The wafer cleaning device according to claim 5, further comprising: a first isolation ring (171); the first isolation ring (171) is disposed between the shower head (1101) and the processing chamber (110) between the tops of the shower head (1101) and the processing chamber (110). The wafer cleaning device according to claim 5, wherein the first excitation power supply (161) is a radio frequency power supply or a direct current power supply. The wafer cleaning device according to claim 7, wherein the power of the first excitation power supply (161) is continuous or pulsed. The wafer cleaning device according to claim 1, wherein the excitation power supply is a second excitation power supply (162), and the second excitation power supply (162) is connected to the base (1102) for cleaning the third excitation power supply. A gas and/or the second gas are ionized to generate a second in-situ plasma. The wafer cleaning device according to claim 9, further comprising: a second isolation ring (172); the second isolation ring (172) is disposed between the base (1102) and the processing chamber (110) between the bottoms to insulate the base (1102) and the processing chamber (110). The wafer cleaning device according to claim 9, wherein the second excitation power supply (162) is a radio frequency power supply. The wafer cleaning device according to claim 9, further comprising: a bias power supply (180); the bias power supply (180) is connected to the base (1102) and is used to convert the second in-situ plasma The body is guided onto the wafer (100) on the base (1102). The wafer cleaning device according to claim 12, wherein the bias power supply (180) is a direct current power supply. A method of using the wafer cleaning device as described in any one of claims 1 to 13, which includes: determining the position of a contaminant on a wafer in a processing chamber; selecting to turn on a first gas source or The first gas source and a second gas source are turned on simultaneously; at least one of a remote plasma source or an excitation power source is selected to be turned on or off according to the location of the contaminant on the wafer. The method of using a wafer cleaning device as claimed in claim 14, wherein the contaminant is located on a surface of the wafer and/or in a first trench, and the remote plasma source and the excitation power source are selected to be turned off, Clean the wafer with the first gas or a first mixture formed by the first gas and the second gas; alternatively, select the remote plasma source to be turned on and the excitation power supply to be turned off, so that a free radical or A second mixture formed by the free radicals and the second gas cleans the wafer. The method of using a wafer cleaning device as claimed in claim 15, wherein the contaminant is located in a second trench of the wafer, the remote plasma source is selected to be turned off and a first excitation power source is turned on, so that a The first in-situ plasma cleans the wafer. The method of using a wafer cleaning device as claimed in claim 15, wherein the contaminant is located in a second trench of the wafer, the remote plasma source is selected to be turned off and a second excitation power source is turned on, so that a The second in-situ plasma cleans the wafer. The method of using a wafer cleaning device as claimed in claim 17, wherein a bias power source is selected to be turned on to guide the second in-situ plasma to the surface of the wafer and/or the second trench. . The method of using a wafer cleaning device as claimed in claim 16 or 17, wherein the aspect ratio of the first trench is less than 10:1; the aspect ratio of the second trench is greater than or equal to 10:1.