TWI793088B - Wireless communication device and receiver for receiving and processing radio frequency signal based on carrier aggregation mode - Google Patents

Abstract

A wireless communication device includes an amplifier block amplifying a radio frequency (RF) input signal. The amplifier block includes: a first amplification unit and a second amplification unit. The first amplification unit amplifies the RF input signal to generate a first RF amplified signal including a first non-linearity factor and a second RF amplified signal including a second non-linearity factor, and combines the first and second RF amplified signals to generate a third RF amplified signal. The second amplification unit receives and amplifies the third RF amplified signal to output an RF output signal corresponding to the at least one carrier. In addition, a receiver for receiving and processing an RF input signal based on a carrier aggregation mode is also provided.

Description

Wireless communication device and receiver for receiving and processing radio frequency signals based on carrier aggregation mode

The present invention relates to a wireless communication device supporting carrier aggregation, and in particular to a receiver for receiving broadband radio frequency (radio frequency, RF) signals and a wireless communication device including the receiver.

The wireless communication device can modulate the radio frequency signal after placing data on a predetermined carrier, amplify the modulated radio frequency signal, and transmit the amplified radio frequency signal to the wireless communication network. In addition, the wireless communication device can receive radio frequency signals from the wireless communication network, amplify the radio frequency signals and demodulate the radio frequency signals. In order to transmit/receive more data, wireless communication devices can support carrier aggregation (CA) (i.e., transmit/receive radio frequency signals modulated by performing multi-carrier modulation (MCM). take over). However, if the degradation of noise characteristics or gain characteristics cannot be prevented, the wireless communication device may not be able to effectively support carrier aggregation.

At least one embodiment of the present invention provides a receiver capable of improving gain characteristics of a wireless communication device supporting carrier aggregation (CA) and a wireless communication device including the receiver.

According to an exemplary embodiment of the present invention, there is provided a wireless communication device including: an amplifier block configured to receive a radio frequency (RF) input signal transmitted using at least one carrier and to amplify the radio frequency input signal to generate at least one radio frequency output signal. The amplifier block includes: a first amplifying unit configured to amplify the radio frequency input signal to generate a first radio frequency amplified signal comprising a first nonlinearity factor and a second radio frequency amplified signal comprising a second nonlinearity factor a radio frequency amplified signal, and combining the first radio frequency amplified signal and the second radio frequency amplified signal to generate a third radio frequency amplified signal; and a second amplifying unit configured to receive the third radio frequency amplified signal A frequency amplified signal and amplifies the third radio frequency amplified signal to produce a radio frequency output signal corresponding to the at least one carrier.

According to an exemplary embodiment of the present invention, there is provided a receiver that receives a radio frequency input signal and processes the radio frequency input signal based on a carrier aggregation (CA) mode. The receiver includes a plurality of amplifier blocks. Each of the plurality of amplifier blocks includes a first amplification unit and a second amplification unit. The first amplifying unit includes at least two input amplifiers having different properties from each other such that non-linearity factors generated when amplifying the radio frequency input signal have different signs from each other. The first amplification unit is configured to perform a first cancellation of the non-linearity factor and to amplify the radio frequency input signal into a radio frequency amplified signal with the at least two input amplifiers. The second amplifying unit includes a plurality of amplifying circuits respectively including at least one amplifier configured to receive the radio frequency amplified signal and amplify the radio frequency amplified signal to output A radio frequency output signal corresponding to a predetermined carrier.

According to an exemplary embodiment of the present invention, a method of operating a wireless communication device supporting carrier aggregation is provided. The method includes amplifying a radio frequency input signal generated from a radio frequency (RF) signal into a first radio frequency amplified signal and a second radio frequency amplified signal, the radio frequency signal being transmitted using at least one carrier, the first a radio frequency amplified signal comprising a first non-linearity factor, said second radio frequency amplified signal comprising a second non-linearity factor having a sign different from said first non-linearity factor A third radio frequency amplified signal is generated by adding the first radio frequency amplified signal to the second radio frequency amplified signal; a third radio frequency amplified signal is generated by amplifying the third radio frequency amplified signal and the at least one a radio frequency output signal corresponding to the carrier; and generating a baseband signal by down-converting the radio frequency output signal.

According to an exemplary embodiment of the present invention, a wireless communication device is provided, and the wireless communication device includes a first amplifier, a second amplifier and a third amplifier. The first amplifier includes a first complementary transistor having a first width. The first amplifier is configured to amplify an input radio frequency (RF) signal transmitted using at least one carrier to generate a first amplified radio frequency signal. The second amplifier includes a non-complementary transistor having a second width different from the first width. The second amplifier is configured to amplify the input radio frequency signal to generate a second amplified radio frequency signal. The third amplifier includes a second complementary transistor configured to receive the first amplified radio frequency signal and the second amplified radio frequency signal and output a third amplified radio frequency signal.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

FIG. 1 is a diagram of a wireless communication device 100 performing wireless communication operations and a wireless communication system 10 including the wireless communication device 100 .

Referring to FIG. 1, the wireless communication system 10 may be a long term evolution (long term evolution, LTE) system, a code division multiple access (code division multiple access, CDMA) system, a global system for mobile communication (global system for mobile communication, GSM), and One of the wireless local area network (WLAN) systems. The CDMA system may have various implementation forms, such as wideband CDMA (WCDMA), time-division synchronized CDMA (TD-SCDMA), cdma2000, etc.

The wireless communication system 10 includes at least two base stations 110 and 112 and a system controller 120 . However, the inventive concept is not limited thereto. For example, the wireless communication system 10 may include at least two base stations and multiple network entities. The wireless communication device 100 may be called user equipment (user equipment, UE), mobile station (mobile station, MS), mobile terminal (mobile terminal, MT), user terminal (user terminal, UT), subscriber station (subscribe station, SS), portable devices, etc. Base stations 110 and 112 may represent fixed stations that communicate with wireless communication device 100 and/or other base stations to transmit and receive data signals and/or control information. The base stations 110 and 112 may be respectively called Node B, evolved-Node B (evolved-Node B, eNB), base transceiver system (base transceiver system, BTS), access point (access point, AP) and so on.

The wireless communication device 100 can communicate with the wireless communication system 10 and can receive signals from the broadcast station 114 . In addition, the wireless communication device 100 can receive signals from satellites 130 of a global navigation satellite system (GNSS) or a global positioning system (GPS). The wireless communication device 100 may support radio technologies for wireless communication (eg, long-term evolution, cdma2000, wideband CDMA, TDSCDMA, GSM, 802.11, etc.).

In an embodiment, the wireless communication device 100 supports carrier aggregation for performing transmit/receive operations using multiple carriers. The wireless communication device 100 can perform wireless communication with the wireless communication system 10 in the low frequency band, the middle frequency band, and the high frequency band. The low frequency band, the mid frequency band, and the high frequency band may be respectively referred to as band groups, and each band group may include a plurality of frequency bands. Carrier aggregation (hereinafter referred to as 'CA') may be classified into intra-band carrier aggregation and inter-band carrier aggregation. Intra-band CA means performing wireless communication operations using multiple carriers within a frequency band, and inter-band CA means performing wireless communication operations using multiple carriers in different frequency bands.

The wireless communication device 100 according to the embodiment of the present invention can perform both intra-band carrier aggregation and inter-band carrier aggregation, and in addition, can utilize one carrier instead of carrier aggregation (ie, instead of multiple carriers) to perform wireless communication operations. The input impedance of a receiver included in the wireless communication device 100 for receiving radio frequency (RF) signals from the wireless communication system 10 can be kept constant during the operation of the intra-band CA and the operation of the inter-band CA. In an embodiment, the wireless communication device 100 receives a radio frequency signal, and then amplifies the radio frequency signal, and at the same time cancels the non-linearity factor to improve the gain characteristic. Therefore, the signal receiving sensitivity of the wireless communication device 100 can be improved, thereby improving the reliability of the wireless communication operation of the wireless communication device 100 .

2A to 2F are diagrams related to techniques of carrier aggregation.

Figure 2A is a diagram illustrating continuous in-band carrier aggregation. Referring to FIG. 2A, the wireless communication device 100 shown in FIG. 1 performs signal transmission/reception using four consecutive carriers within the same frequency band which is a low frequency band. In an embodiment, a set of carriers is considered contiguous when there is no space between any two carriers in the set.

Figure 2B is a diagram schematically illustrating discontinuous in-band carrier aggregation. Referring to FIG. 2B , the wireless communication device 100 performs signal transmission/reception using four discontinuous carriers within the same frequency band which is a low frequency band. In an embodiment, a set of carriers is considered discontinuous when there is a space between at least two carriers in the set. The carriers may be spaced apart from each other by, for example, 5 MHz, 10 MHz, or another amount, respectively.

FIG. 2C is a diagram schematically illustrating inter-band carrier aggregation in the same frequency band group. Referring to FIG. 2C , the wireless communication device 100 performs signal transmission/reception using four carriers in two frequency bands included in the same frequency band group.

FIG. 2D is a diagram schematically illustrating inter-band carrier aggregation in different frequency band groups. Referring to FIG. 2D , the wireless communication device 100 performs signal transmission/reception using four carriers included in different frequency band groups. In detail, two carriers are in frequency bands included in the low frequency band, and the other two carriers are in frequency bands included in the middle frequency band.

Please note that the present invention is not limited to the exemplary aggregated carriers shown in FIG. 2A to FIG. 2D . For example, the wireless communication device 100 can support various combinations of aggregated carriers for frequency bands or frequency band groups.

Referring to FIG. 2E , an aggregated carrier technique is presented that operates by combining multiple frequency bands in one or more base stations to meet the requirement for higher bit rates. The LTE network, which is one of the mobile networks, can achieve a data transmission speed of 100 Mbps, and thus can transmit/receive large-capacity video in a wireless communication environment. FIG. 2E shows an example in which five frequency bands of the Long-Term Evolution standard are combined according to a carrier aggregation technique capable of increasing data transmission speed by five times. In FIG. 2E , each of the carriers (carrier 1 to carrier 5 ) is defined in the long-term evolution, and in the long-term evolution standard, one frequency bandwidth is defined to be 20 MHz at maximum. Therefore, the wireless communication device 100 according to the embodiment can increase the data rate to a bandwidth of 100 MHz.

FIG. 2E shows an example where only carriers defined by long-term evolution are combined, but the inventive concept is not limited thereto. As shown in FIG. 2F , carriers of different wireless communication networks can be combined. Referring to FIG. 2F , when frequency bands are combined according to the carrier aggregation technology, frequency bands of a 3rd-generation (3G) standard and a wireless fidelity (Wi-fi) standard may also be combined. As mentioned above, LTE-A adopts carrier aggregation technology, and therefore, data transmission can be performed at a faster speed.

FIG. 3 is a block diagram of another example of the wireless communication device 100 shown in FIG. 1 .

Referring to FIG. 3 , the wireless communication device 200 includes a transceiver 220 connected to the main antenna 210 , a transceiver 250 connected to the auxiliary antenna 212 , and a data processor (or controller) 280 . The transceiver 220 may include a plurality of receivers 230a through 230k and a plurality of transmitters 240a through 240k. The transceiver 250 may include a plurality of receivers 260a-260l and a plurality of transmitters 270a-270l. The transceivers 220 and 250 with the above structure can support multiple frequency bands, multiple radio technologies, carrier aggregation, receiving diversity (receiving diversity), and multiple-input multiple-output (multiple-input) between multiple transmit antennas and multiple receive antennas. multiple-out, MIMO).

In an embodiment, the first receiver 230a includes a low noise amplifier (low noise amplifier, LNA) 224a and a receiving circuit 225a. The structure of the first receiver 230a is applicable to other receivers 230b to 230k, and 260a to 260l. Hereinafter, the structure of the first receiver 230a will be explained below. To receive data, the main antenna 210 may receive radio frequency signals from base stations and/or transmitter stations. In an embodiment, the main antenna 210 generates a radio frequency input signal by performing frequency filtering on the received radio frequency signal and routes the filtered radio frequency input signal to a selected receiver through the antenna interface circuit 222 . The antenna interface circuit 222 may include a switch device, a duplexer, a filter circuit, and an input matching circuit. The low noise amplifier 224 a amplifies the filtered radio frequency input signal to generate a radio frequency output signal and provides the radio frequency output signal to the data processor 280 . Data processor 280 may store data in memory 282 based on the radio frequency output signal.

The low noise amplifier 224 a according to an embodiment of the inventive concept constantly maintains an input impedance as a target impedance during communication operations according to various carrier aggregations. In addition, when the radio frequency input signal is amplified, the non-linearity factor that may occur during amplification can be canceled to improve the gain characteristics and noise characteristics during amplification. In one embodiment, the LNA 224a sequentially amplifies the RF input signal by at least a factor of two to generate an RF output signal, and sequentially cancels the non-linearity factor generated during the amplification by at least a factor of two. A detailed description thereof will be provided hereafter.

In an embodiment, the receive circuit 225a downconverts the radio frequency output signal received from the low noise amplifier 224a from radio frequency to baseband to generate a baseband signal. In other embodiments, the receiving circuit 225a may be referred to as an output circuit. In an embodiment, the receiving circuit 225 a amplifies and filters the baseband signal and provides the amplified and filtered baseband signal to the data processor 280 . Data processor 280 may store data in memory 282 based on the amplified and filtered baseband signal. The receiving circuit 225 a may include at least one of a mixer, a filter (filter), an amplifier, an oscillator, a local oscillator generator (local oscillator generator), a phase locked loop (Phase Locked Loop, PLL) circuit and the like.

In an embodiment, the first transmitter 240a includes a power amplifier (Power Amplifier, PA) 226a and a transmitting circuit 227a. The structure of the first emitter 240a is applicable to the other emitters 240b to 240k, and 270a to 270l. Hereinafter, the structure of the first transmitter 240a will be explained below. When transmitting data, the data processor 280 may perform processing (eg, data encoding and data modulation) on the data to be transmitted, and may provide an analog output signal to the selected transmitter. For example, the data processor 280 can process digital data into analog data for storage in the memory 282 .

In an embodiment, the transmit circuit 257a upconverts the analog output signal from baseband to radio frequency, and amplifies and filters the analog output signal to generate a modulated radio frequency signal. In an embodiment, upconversion of the analog output signal results in a modulated radio frequency signal having a higher frequency than the analog output signal. The transmitting circuit 257a may include at least one of an amplifier, a filter, a mixer, an input matching circuit, an oscillator, a local oscillator (local oscillator, LO), a phase-locked loop circuit, and the like. In an embodiment, the power amplifier 226a receives and amplifies the modulated RF signal, and provides the transmit RF signal with a suitable output power level to the main antenna 210 via the antenna interface circuit 222 . The modulated radio frequency signal can be transmitted to the base station via the main antenna 210 .

All or one of the transceiver 220 and the transceiver 250 may be implemented as an analog IC, a radio frequency IC, or a mixed signal IC. For example, the low noise amplifiers 224a to 224k and 254a to 254l, and the receiving circuits 225a to 225k and 255a to 255l may be implemented as a module (eg, a radio frequency integrated circuit). However, the inventive concept is not limited thereto. For example, the circuit configurations of transceivers 220 and 250 can be implemented in a variety of different ways.

FIG. 4 is a block diagram of a receiver 400 according to an exemplary embodiment of the inventive concept. Receiver 400 may be used to implement one or more of receivers 230a-230k and/or receivers 260a-2601 shown in FIG.

Referring to FIG. 4 , the receiver 400 includes a carrier aggregation low noise amplifier 440 supporting non-carrier aggregation and in-band carrier aggregation, an antenna 410 , an antenna interface circuit 420 , an input matching circuit 430 , and a plurality of output circuits 450_1 to 450_M. The CA LNA 440 can operate on the output of at least one of the LNAs 224a to 224k and 254a to 254l shown in FIG. 3 . The carrier aggregation low noise amplifier 440 may include a single input terminal and multiple (M) output terminals. For example, the carrier aggregation low noise amplifier 440 may receive an input RF signal from a single input and output multiple RF signals through multiple output terminals based on the input RF signal. The receiver 400 may receive an input radio frequency signal (or downlink signal) transmitted by at least one carrier via the antenna 410 . Antenna 410 may provide received radio frequency signals to antenna interface circuit 420 . In an embodiment, antenna interface circuit 420 performs frequency filtering and routing of received radio frequency signals to provide receiver input signal RX _IN to input matching circuit 430 . The input matching circuit 430 can provide the radio frequency input signal RF _IN to the CA LNA 440 through impedance matching. The input matching circuit 430 can perform impedance matching between the CA LNA 440 and the antenna interface circuit 420 or the antenna 410 . The input matching circuit 430 can be included in the antenna interface circuit 420 .

The carrier aggregation low noise amplifier 440 amplifies the radio frequency input signal RF _IN in a carrier aggregation form using a carrier or in a non-carrier aggregation form to output a radio frequency output signal through a low noise amplifier output terminal, or to include M The in-band carrier aggregation form of the carrier amplifies the radio frequency input signal RF _IN to output M radio frequency output signals RF _OUT1 to RF _OUTM through M low noise amplifier output terminals, where M is greater than 1. In an embodiment, the CA LNA 440 receives a mode control signal XMOD from an external source, and operates in one of a single output mode or a multiple output mode based on the value or level of the mode control signal XMOD. In the single output mode, the CA LNA 440 operates in a one- _{input and one-output configuration and receives a radio frequency input signal RF IN comprising} at least one signal transmitted via a carrier. Single output mode can be used to receive signals transmitted over one carrier instead of utilizing carrier aggregation. In the multi-output mode, the carrier aggregation low noise amplifier 440 operates in a configuration of one input and M outputs, and receives the radio frequency input signal RF _IN including signals transmitted by multiple carriers and supplies the M output circuits 450_1 to M respectively. 450_M outputs M radio frequency output signals RF _OUT1 to RF _OUTM . One radio frequency output signal may correspond to one carrier. In an embodiment, at least one of the output circuits 450_1 to 450_M receives the radio frequency output signal and down-converts the radio frequency output signal to output the radio frequency output signal as a baseband signal. In an embodiment, the down conversion converts the radio frequency output signal to a lower frequency signal. The output circuits 450_1 to 450_M may correspond to the receiving circuits 225 and 255 shown in FIG. 3 .

5A and 5B are block diagrams of the low noise amplifier 440 and the output circuit 450 of the receiver 400 shown in FIG. 4 according to an exemplary embodiment.

Referring to FIG. 5A , the receiver 400 includes a carrier aggregation low noise amplifier 440 and the plurality of output circuits 450_1 to 450_M. The CA LNA 440 includes at least one amplifier block AMPB. The amplifier block AMPB includes a first amplification unit 442 and a second amplification unit 446 . The first amplifying unit 442 includes an amplifying circuit 443 , which amplifies the radio frequency input signal RF _IN and cancels a non-linearity factor generated during the amplification. The second amplifying unit 446 is connected to the first amplifying unit 442 via the output node X of the first amplifying unit 442 and receives an amplified radio frequency input signal from the first amplifying unit 442 . The second amplifying unit 446 includes a plurality of amplifying circuits 446_1 to 446_M, and each of the amplifying circuits 446_1 to 446_M can receive an enable/disable control signal EN/DIS_CS to control enabling and disabling. For example, when a radio frequency signal transmitted using G (where G is an integer smaller than M) carriers in the form of in-band carrier aggregation is received, G amplifying circuits may be selected and enabled from the amplifying circuits 446_1 to 446_M, and The activated amplifying circuits can respectively output radio frequency output signals. For example, when G is less than the total number of available amplifying circuits, the remaining amplifying circuits can be disabled to save power. When it is assumed that a radio frequency signal transmitted using M carriers in the form of in-band carrier aggregation is received, each of the amplifying circuits 446_1 to 446_M may amplify the radio frequency input signal and cancel a non-linearity factor generated during the amplification to Output radio frequency output signals RF _OUT1 to RF _OUTM .

As described above, the carrier aggregation low noise amplifier 440 according to the present invention can cancel the non-linearity factor generated when amplifying a predetermined signal, so as to improve the gain characteristic whose linearity is valued. In addition, the second amplifying unit 446 receives the amplified radio frequency input signal from the first amplifying unit 442 and amplifies the received radio frequency input signal again, and thus, can consume less direct current (DC) current while outputting a radio frequency output signal having a desired magnitude.

The output circuits 450_1 to 450_M respectively include load circuits 451_1 , 451_2 , . In an embodiment, the load circuits 451_1 to 451_M are baseband filters. The first down-converter circuit 452_1 includes two mixers 453_1 and 454_1, and baseband filters 455_1 and 456_1. The structure of the first down-converter circuit 452_1 can be applied to other down-converter circuits 452_2 to 452_M. For example, the second downconverter circuit 452_2 includes two mixers 453_2 and 454_2, and baseband filters 455_2 and 456_2, and the Mth downconverter circuit 452_M includes mixers 453_M and 454_M, and a baseband filter 455_M and 456_M. When it is assumed that the radio frequency signals transmitted by M carriers in the form of in-band carrier aggregation are received, the output circuits 450_1 to 450_M may respectively convert the radio frequency output signals RF _OUT1 to RF _OUTM into baseband signals XBAS _OUT1 to XBAS _OUTM . The mixers 453_1 , 453_2 , . . . , 453_M may receive the in-phase local oscillator signal ILO1 , and the mixers 454_1 , 454_2 , . . . 454_M may receive the quadrature local oscillator signal QLO1 .

Referring to FIG. 5B , unlike the example shown in FIG. 5A , the receiver 400 ′ further includes a switch unit 444 ′, and the switch unit 444 ′ includes a plurality of switching devices SW _{1 ,} SW _{2 ,} . . . _, SW _M . Therefore, when a radio frequency signal transmitted using N carriers in the form of in-band carrier aggregation is received, the switch unit 444' may be controlled by the switch control signal SWCS so that N amplifying circuits are selected from the amplifying circuits 446_1' to 446_M' . However, embodiments of the inventive concept are not limited to the structure of the receiver 400 shown in FIG. 5A and the receiver 400' shown in FIG. 5B.

FIG. 6 is a block diagram of a receiver 500 according to an exemplary embodiment of the present invention. Receiver 500 may be used to implement one or more of receivers 230a-230k and/or receivers 260a-2601 shown in FIG.

6, the receiver 500 includes a multiple-input multiple-output low noise amplifier 540 supporting non-carrier aggregation, intra-band carrier aggregation, and inter-band carrier aggregation, an antenna 510, an antenna interface circuit 520, an input matching circuit, and multiple output Circuits 550_1 to 550_M. The input matching circuits may include a first input matching circuit 530_1 to an Nth input matching circuit 530_N. MIMO LNA 540 may operate on the output of one of LNAs 224 and 254 shown in FIG. 3 . The MIMO low noise amplifier 540 may include multiple (N) input terminals and multiple (M) output terminals. The receiver 500 may receive radio frequency signals (or downlink signals) transmitted from multiple carriers or one carrier within the same frequency band or different frequency bands via the antenna 510 . Antenna 510 may provide received radio frequency signals to antenna interface circuit 520 . The antenna interface circuit 520 may perform frequency filtering on the received radio frequency signal. As an example, antenna interface circuit 520 filters a radio frequency signal to generate a first receiver input signal RX _IN1 that is transmitted using a carrier wave in a first frequency band. In addition, the antenna interface circuit 520 filters the radio frequency signal to generate an Nth receiver input signal RX _INN transmitted using a carrier in the Nth frequency band. The antenna interface circuit 520 can generate one to N receiver input signals RX _IN1 to RX _INN and can be routed to provide the receiver input signals to the input matching circuits 530_1 to 530_N. The input matching circuits 530_1 to 530_N may provide one to N radio frequency input signals RF _IN1 to RF _INN applied to the MIMO LNA 540 by performing impedance matching operations.

The MIMO low noise amplifier 540 can receive one to N radio frequency input signals RF _IN1 to RF _INN . For example, MIMO LNA 540 may amplify one RF input signal transmitted from non-CA or intra-band CA to N radio frequency input signals transmitted from inter-band CA. The MIMO low noise amplifier 540 amplifies the received one to N radio frequency input signals RF _IN1 to RF INN to output radio frequency output signals RF _OUT1 to RF _OUTM to the output circuits 550_1 to _{550_M} respectively.

In an embodiment, the MIMO LNA 540 receives the mode control signal XMOD from an external source, and based on the value or level of the mode control signal XMOD operates in the single output mode, the intra-band carrier aggregation mode, and the inter-band carrier Runs in one of the aggregation modes. In single output mode, MIMO LNA 540 operates in a one input and one output configuration. In addition, the MIMO low noise amplifier 540 may receive a radio frequency input signal including at least one signal transmitted through a carrier, and amplify the radio frequency input signal to output a radio frequency output signal. In the in-band carrier aggregation mode, MIMO LNA 540 operates in a configuration of one input and M outputs, where M is greater than one. Additionally, the MIMO LNA 540 can receive a radio frequency input signal including multiple transmissions transmitted over multiple carriers in the same frequency band, and can output one to M radio frequency signals to M output circuits 550_1 to 550_M, respectively. Frequency output signals RF _OUT1 to RF _OUTM . One radio frequency output signal may correspond to one carrier. In the inter-band carrier aggregation mode, the MIMO LNA 540 operates in a configuration of N inputs and M outputs, where N and M are greater than one. In addition, the MIMO LNA 540 can receive a radio frequency input signal including multiple transmissions transmitted over one to M carriers in one to N different frequency bands, and can provide M output circuits 550_1 to 550_M, respectively. Output radio frequency output signals RF _OUT1 to RF _OUTM . At least one of the output circuits 550_1 to 550_M may receive the radio frequency output signal and down-convert the radio frequency output signal to output the radio frequency output signal as a baseband signal.

7A is a block diagram of the receiver 500 shown in FIG. 6 according to an exemplary embodiment, FIG. 7B is a block diagram illustrating the operation of the receiver in the form of inter-band carrier aggregation, and FIG. 7C is a block diagram illustrating the operation of the receiver in the form of in-band carrier aggregation. A block diagram of operations performed in aggregate form.

Referring to FIG. 7A , the receiver 500 includes a MIMO low noise amplifier 540 and a plurality of output circuits 550_1 to 550_M. The MIMO low noise amplifier 540 includes a plurality of amplifier blocks AMPB_1 to AMPB_N. The plurality of amplifier blocks AMPB_1 to AMPB_N respectively receive radio frequency input signals RF _IN1 to RF _INN and amplify the radio frequency input signals RF _IN1 to RF _INN to generate radio frequency output signals RF _OUT1 to RF _OUTM , and can output Radio frequency output signals RF _OUT1 to RF _OUTM . The plurality of amplifier blocks AMPB_1 to AMPB_N are connected to output circuits 550_1 to 550_M. For example, the first amplifier block AMPB_1 can be connected to the M output circuits 550_1 to 550_M, and the other amplifier blocks AMPB_2 to AMPB_M can be respectively connected to the M output circuits 550_1 to 550M. The first output circuit 550_1 may include a load circuit 551_1 and a down converter circuit 552_1. The structure of the first output circuit 550_1 can be applied to other output circuits 550_M. For example, the Mth output circuit 550_M may include an Mth load circuit 551_M and an Mth down-converter circuit 552_M. The output circuits 550_1 to 550_M may respectively receive one of the radio frequency output signals RF _OUT1 to RF _OUTM and down-convert the one of the radio frequency output signals RF _OUT1 to RF _OUTM to output baseband signals XBAS _OUT1 to XBAS _OUTM .

FIG. 7B is a diagram illustrating the operation of receiver 500 in inter-band carrier aggregation. Referring to FIG. 7B, the receiver 500 includes a MIMO low noise amplifier 540 and first to fifth output circuits 550_1, 550_2, 550_3, 550_4, and 550_5, and the MIMO low noise amplifier 540 includes a first Amplifier blocks to eighth amplifier blocks AMPB_1 , AMPB_2 , AMPB_3 , AMPB_4 , AMPB_5 , AMPB_6 , AMPB_7 and AMPB_8 . The first output circuit 550_1 includes a first load circuit 551_1 and a first down converter circuit 552_1, the second output circuit 550_2 includes a second load circuit 551_2 and a second down converter circuit 552_2, and the third output circuit 550_3 includes a third load circuit 551_3 and a third down converter circuit 552_3, the fourth output circuit 550_4 includes a fourth load circuit 551_4 and a fourth down converter circuit 552_4, and the fifth output circuit 550_5 includes a fifth load circuit 551_5 and a fifth down converter circuit 552_5 . Hereinafter, a case will be explained in which the base station transmits radio frequency signals using the first carrier ω1 of the first frequency band, the second carrier ω2 of the third frequency band, and the third carrier ω3 of the fifth frequency band.

First, some amplifier blocks (AMPB_1, AMPB_3, and AMPB_5) among the amplifier blocks AMPB_1 to AMPB_8 are enabled, and the enabled amplifier blocks AMPB_1, AMPB_3, and AMPB_5 receive signals corresponding to the first carrier ω1 to the third carrier ω3, respectively. The first radio frequency input signal RF _IN1 to the third radio frequency input signal RF _IN3 . The first amplifier block AMPB_1 amplifies the first radio frequency input signal RF _IN1 and cancels the non-linearity factor generated during the amplification, and may output the first radio frequency output signal RF _OUT1 to the enabled first output circuit 550_1 . The third amplifier block AMPB_3 amplifies the second radio frequency input signal RF _IN2 and cancels the non-linearity factor generated during the amplification, and may output the second radio frequency output signal RF _OUT2 to the enabled second output circuit 550_2 . In addition, the fifth amplifier block AMPB_5 amplifies the third radio frequency input signal RF _IN3 and cancels the non-linearity factor generated during the amplification, and may output the third radio frequency output signal RF _OUT3 to the enabled third output circuit 550_3 . The enabled output circuits 550_1 to 550_3 can output baseband signals XBAS _OUT1 to XBAS _OUT3 corresponding to carriers ω1 to ω3.

FIG. 7C is a diagram illustrating the operation of receiver 500 in in-band carrier aggregation. 7C, the receiver 500 includes a MIMO low noise amplifier 540 and a first output circuit 550_1 to a fifth output circuit 550_5, and the MIMO low noise amplifier 540 includes a first amplifier block AMPB_1 to an eighth Amplifier block AMPB_8. Hereinafter, a case where a base station transmits a radio frequency signal using the first carrier ω1, the second carrier ω2, and the third carrier ω3 of the same frequency band will be explained.

First, the first amplifier block AMPB_1 is enabled from the amplifier blocks AMPB_1 to AMPB_8 , and the enabled amplifier block AMPB_1 receives the first radio frequency input signal RF _IN1 corresponding to the first carrier ω1 to the third carrier ω3 . The first amplifier block AMPB_1 amplifies the first radio frequency input signal RF _IN1 and cancels the non-linearity factor generated during the amplification, and outputs the first radio frequency corresponding to the first carrier ω1 to the enabled first output circuit 550_1 output signal RF _OUT1 . In addition, the first amplifier block AMPB_1 amplifies the first radio frequency input signal RF _IN1 and cancels the non-linearity factor generated during the amplification, and outputs the second signal corresponding to the second carrier ω2 to the enabled second output circuit 550_2 . radio frequency output signal RF _OUT2 . Finally, the first amplifier block AMPB_1 amplifies the first radio frequency input signal RF _IN1 and cancels the non-linearity factor generated during the amplification, and outputs the third signal corresponding to the third carrier ω3 to the enabled third output circuit 550_3 . radio frequency output signal RF _OUT3 . The enabled output circuits 550_1 to 550_3 can output baseband signals XBAS _OUT1 to XBAS _OUT3 corresponding to carriers ω1 to ω3. Hereinafter, features of a detailed structure of an amplifier block according to an embodiment of the inventive concept will be set forth below.

8A and 8B are block diagrams of the first amplifying unit 442 shown in FIG. 5A according to an exemplary embodiment of the present invention.

Referring to FIG. 8A , the first amplifying unit 442A includes a first input amplifier 442_1A and a second input amplifier 442_2A. The first input amplifier 442_1A and the second input amplifier 442_2A may be connected to each other in parallel. That is, the input terminal of the first input amplifier 442_1A is connected to the input terminal of the second input amplifier 442_2A through the Y node, and the output terminal of the first input amplifier 442_1A is connected to the output terminal of the second input amplifier 442_2A through the X node.

The first input amplifier 442_1A receives the radio frequency input signal RF _IN and amplifies the radio frequency input signal RF _IN to generate a first radio frequency amplified signal RF _{IN_B1} including a first nonlinearity factor NLF1 . The second input amplifier 442_2A receives the radio frequency input signal RF _IN and amplifies the radio frequency input signal to generate a second radio frequency amplified signal RF _{IN_B2} including the second nonlinearity factor NLF2 . The non-linearity factor may be a signal generated when a signal is amplified by a predetermined amplifier, and the non-linearity factor may include at least one of the linearity factors that hinder the amplifier. As an example, when the amplifier includes a transistor, a signal generated by a coefficient related to the transconductance of the transistor may correspond to a non-linearity factor.

As an example, the characteristics of the first input amplifier 442_1A and the characteristics of the second input amplifier 442_2A are set differently from each other, and thus, the sign of the first nonlinearity factor NLF1 produced by the first input amplifier 442_1A is different from that produced by the second input amplifier 442_1A. Sign of the second nonlinearity factor NLF2 generated by 442_2A. For example, when the first nonlinearity factor NLF1 has a positive sign, the second nonlinearity factor NLF2 has a negative sign. The first amplified radio frequency signal RF _{IN_B1} and the second amplified radio frequency signal RF _{IN_B2} may be combined at node X and output as a third amplified radio frequency signal RF _{IN_B3} . Here, since the signs of the first nonlinearity factor NLF1 and the second nonlinearity factor NLF2 are different from each other, the first nonlinearity factor NLF1 and the second nonlinearity factor NLF2 can cancel each other out. The cancellation of the non-linearity factor in the first amplification unit 442A may be referred to as a first cancellation. Accordingly, the third radio frequency amplified signal RF _{IN_B3} may comprise a third non-linearity factor NLF3 which is the result of a cancellation between the first non-linearity factor NLF1 and the second non-linearity factor NLF2.

Referring to FIG. 8B , when compared with the configuration of the first amplifying unit 442A shown in FIG. 8A , the first amplifying unit 442B may further include a feedback circuit 442_3B. The feedback circuit 442_3B can be connected in parallel to the first input amplifier 442_1B and the second input amplifier 442_2B. That is to say, the feedback circuit 442_3B can be connected between the X node and the Y node. Since the first amplifying unit 442B includes a feedback circuit 442_3B, the input impedance Z _IN of the first amplifying unit 442B can be constantly maintained at a predetermined value. In an embodiment, the feedback circuit 442_3B is configured to make the input impedance Z _IN of the first amplifying unit 442B correspond to a predetermined target impedance (for example, 50 ohms). In addition, the feedback circuit 442_3B may enable the input matching operation to the low noise amplifier including the first amplifying unit 442B to be sufficiently performed. In addition, the feedback circuit 442_3B can set the amplification gain of the first amplifying unit 442B to be constant so that the linearity of the first amplifying unit 442B can be improved.

9A and 9B are block diagrams showing an example of the second amplifying unit 446 shown in FIG. 5A.

Referring to FIG. 9A , as in FIG. 5A , the second amplification unit 446A may include a plurality of amplification circuits. The amplification circuit 446_1A may be one of the plurality of amplification circuits, and the configuration of the amplification circuit 446_1A may be applied to the plurality of amplification circuits. The amplification circuit 446_1A includes an amplifier 446_11A. The amplifier 446_11A receives the third radio frequency amplified signal RF _{IN_B3} including the third non-linearity factor NLF3 from the first amplifying unit 442A. The amplifier 446_11A can generate the radio frequency output signal RF _OUT by amplifying the third radio frequency amplified signal RF _{IN_B3} . The amplifier 446_11A according to the embodiment of the inventive concept generates a fourth nonlinearity factor NLF4 when amplifying the third radio frequency amplified signal RF _{IN_B3} , and the fourth nonlinearity factor NLF4 has the same value as the third amplified nonlinearity factor BNLF3. Sign different symbols. Here, when the amplifier 446_11A amplifies the third radio frequency amplified signal, the amplifier 446_11A can cancel the fourth nonlinearity by adding the generated fourth nonlinearity factor NLF4 to the amplified third nonlinearity factor BNLF3 degree factor NLF4 and an amplified third non-linearity factor BNLF3. The cancellation of the non-linearity factor in the second amplification unit 446A may be referred to as a second cancellation. Accordingly, the radio frequency output signal RF _OUT may comprise a final non-linearity factor FNLF which is the result of cancellation between the fourth non-linearity factor NLF4 and the amplified third non-linearity factor BNLF. The final nonlinearity factor FNLF may have a value of 0 or a value close to 0. Thus, the second amplifying unit 446A removes the nonlinearity factor and improves the linearity of the second amplifying unit 446A. However, the concept of the present invention is not limited to the first amplifying unit 442A shown in FIG. 8A and the second amplifying unit 446A shown in FIG. 9A . For example, the first amplifying unit 442A or the second amplifying unit 446A may include more circuit configurations for canceling the non-linearity factor besides the first cancellation and the second cancellation.

Referring to FIG. 9B , when compared with the second amplifying unit 446A shown in FIG. 9A , the amplifying circuit 446_1B of the second amplifying unit 446B may further include a current buffer 446_12B. Due to the existence of the current buffer 446_12B, a large input/output impedance can be provided to the amplification circuit 446_1B, and thus, the amplification gain of the amplification circuit 446_1B can be improved. In addition, the current buffer 446_12B can reduce the degree of variation of the current flowing through the amplifying circuit 446_1B, and thus, a stable amplifying operation can be performed.

FIG. 10 is a graph illustrating non-linearity factors to be canceled according to an exemplary embodiment of the present invention.

Referring to FIG. 10 , the transconductance second derivative gm'' of the transistor with respect to the amplifier including the predetermined transistor becomes a factor hindering linearity during the amplification operation of the amplifier. Specifically, the value of gm'' varies according to the gate-source voltage (VGS) or bias voltage of the transistor. In more detail, gm'' may have a positive value in zone A and may have a negative value in zone B based on a predetermined reference value V _R . Although the characteristics of gm'' of the transistor may vary depending on the circuit configuration of the transistor, the following description will be provided based on the graph shown in FIG. 10 .

11A to 11C are detailed circuit diagrams of low noise amplifiers 500A, 500B and 500C according to exemplary embodiments of the present invention.

Referring to FIG. 11A , the low noise amplifier 500A includes a first amplifying unit 510A, a second amplifying unit 520A and a switch 530A. Only one amplification circuit among the plurality of amplification circuits is shown in the second amplification units 520A, 520B, and 520C in FIGS. 11A to 11C . The first amplifying unit 510A includes a first input amplifier 512A and a second input amplifier 514A. The first input amplifier 512A includes a M _A1 transistor that is an NMOS transistor, and the second input amplifier 514A includes a M _A2 transistor that is a PMOS transistor. The source of the _MA1 transistor and the drain of the _MA2 transistor may be connected to each other via an X node, and the gate of the _MA1 transistor and the gate of the _MA2 transistor may be connected to each other via a Y node. The source of the M _A2 transistor can receive the power voltage V _DD , and the drain of the M _A1 transistor can receive the ground voltage. The second amplifying unit 520A includes an amplifier 522A, and the amplifier 522A includes an M _B1 transistor that is an NMOS transistor. The switch 530A includes a switching device SW that is turned on or off according to a switch control signal SWCS, and hereinafter, an explanation will be made on the assumption that the switching device SW is in a conductive state.

First, a radio frequency input signal RF _IN is applied to the gates of the _MA1 transistor and the gates of the _MA2 transistor. The M _A1 transistor amplifies the radio frequency input signal RF _IN to generate a first radio frequency amplified signal RF _{IN_B1} . Hereinafter, the non-linearity cause signal (non-linearity cause signal) is a signal corresponding to the above-mentioned non-linearity factor, and the fundamental signal (fundamental signal) may include when the data processor 280 shown in FIG. 3 performs data processing operations signal that information is required.

The first radio frequency amplified signal RF _{IN_B1} may include a first nonlinearity cause signal NCS1 corresponding to a nonlinearity factor, and a first fundamental wave signal FS _{IN_B1} . The M _A2 transistor can amplify the radio frequency input signal to generate a second radio frequency amplified signal RF _{IN_B2} . The second radio frequency amplified signal RF _{IN_B2} may include a second nonlinearity cause signal NCS2 corresponding to a nonlinearity factor and a second fundamental wave signal FS _{IN_B2} . The non-linearity cause signal is generated by the gm'' component of the transistor, and may be the reason for reducing the linearity of the first amplifying unit 510A or the second amplifying unit 520A.

In the first amplifying unit 510A according to the embodiment, in order to cancel the first non-linearity cause signal NCS1 and the second non-linearity cause signal NCS2, the first input amplifier 512A may generate the first non-linearity cause signal having a positive value NCS1, and the second input amplifier 514A can generate a second nonlinearity cause signal NCS2 with a negative value. In an embodiment, the M _A1 transistor is biased differently from the M _A2 transistor in order to generate the non-linearity cause signal with a different sign. In an embodiment, the width (or function of width) of the M _A1 transistor is different from the width of the M _A2 transistor in order to adjust the magnitude of the non-linearity cause signal with a different sign. As the width of the transistor increases, an amplifier including the transistor may require a smaller bias voltage than is required to achieve a target amplification gain.

Referring to FIG. 10, when the first transistor TR _WD1 has a first width WD1 and the second transistor TR _WD2 has a second width WD2 smaller than the first width WD1, the first transistor TR _WD1 needs a first bias voltage V _GS1 And the second transistor TR _WD2 requires the second bias voltage V _GS2 greater than the first bias voltage V _GS1 to achieve the same target gain. When the first bias voltage V _GS1 is applied to the first transistor TR _WD1 , the gm'' of the first transistor TR _WD1 may have a positive value, and when the second bias voltage V _{GS2 is applied to the second transistor TR WD2 ,} gm'' of the second transistor TR _WD2 may have a negative value.

Based on the above characteristics, the width of the M _A1 transistor and the width of the M _A2 transistor can be set such that the gm'' of the M _A1 transistor has a negative value and the gm'' of the M _A2 transistor has a positive value, and the amplifier can be Design on this basis. To sum up, the operating region of the M _A1 transistor is set differently from that of the M _A2 transistor, and thus, the non-linearity factor can be canceled out while amplifying.

As an example, the width of the M _A1 transistor and the width of the M _A2 transistor can be set such that the absolute value of the first non-linearity cause signal NCS1 generated by the first input amplifier 512A is the same as the absolute value of the first non-linearity cause signal NCS1 generated by the second input amplifier 514A. The absolute values of the two non-linearity cause signals NCS2 are equal to each other. As an example, the width of the _MA2 transistor may be greater than the width of the _MA1 transistor. Here, the third radio frequency amplified signal RF IN_B3 output from the X node after combining the first _radio frequency amplified signal RF _{IN_B1} and the second radio frequency amplified signal RF _{IN_B2} such that the third radio frequency amplified signal RF _{IN_B3} does not include The linearity cause signal NCS3 instead only includes the third fundamental signal FS _{IN — B3} .

The third radio frequency amplified signal RF _{IN_B3} may be applied to the gate of the M _B1 transistor. The M _B1 transistor can amplify the third radio frequency amplification signal RF _{IN_B3} to generate the radio frequency output signal RF _OUT . The radio frequency output signal RF _OUT may include a fundamental output signal FS _OUT and a fourth nonlinearity cause signal NCS4 . Since the non-linearity cause signal is canceled in the first amplifying unit 510A, the radio frequency output signal RF _OUT does not include the non-linearity cause signal except the fourth non-linearity cause signal NCS4, and thus the linearity can be ensured. . The drain of M _B1 transistor can receive ground voltage and the source of M _B1 transistor can provide radio frequency output signal RF _OUT .

Referring to FIG. 11B , the low noise amplifier 500B includes M _A1 'transistor, M _A2 'transistor and M _B1 'transistor, M _A1 'transistor, M _A2 'transistor and M _B1 'transistor have the same It shows the different widths of the M _A1 transistor, the M _A2 transistor and the M _B1 transistor included in the low noise amplifier 500A. The first nonlinearity cause signal NCS1' generated by the first input amplifier 512B has a positive sign and the second nonlinearity cause signal NCS2' generated by the second input amplifier 514B has a negative sign, and the M _A1 ' transistor The width of and the width of the M _A2 'transistor are set such that the absolute value of the first non-linearity cause signal NCS1' is greater than the absolute value of the second non-linearity cause signal NCS2'. As an example, the width of the M _A2 ' transistor may be greater than the width of the M _A1 ' transistor. As a result, the third radio frequency amplified signal RF _{IN_B3} ' generated by the first amplifier 510B may include the third non-linearity cause signal NCS3' having a predetermined positive value.

The amplifier 522B can amplify the third radio frequency amplified signal RF _{IN_B3} ′ to output a radio frequency output signal RF _OUT ′. In an embodiment, the width of the M _B1 ' transistor is set such that the fourth non-linearity cause signal NCS4' produced by the amplifier 522B has a different sign than the third amplified non-linearity cause signal BNCS3', and has the same absolute value as that of the third amplified non-linearity cause signal BNCS3'. As an example, as described above with reference to FIG. 10 , the width of the M _B1 ' transistor may be set such that gm'' of the M _B1 ' transistor has a positive value. Therefore, the fourth nonlinearity cause signal NCS4 ′ and the third amplified nonlinearity cause signal BNCS3 ′ can cancel each other out, and the radio frequency output signal RF _OUT ′ can only include the fundamental output signal FS _OUT . Therefore, the linearity of the low noise amplifier 500B can be improved.

Referring to FIG. 11C, the low noise amplifier 500C includes a M _A1 '' transistor and a M _{A2 '} transistor, and the M _A1 '' transistor and the M _A2 '' transistor have the same characteristics as those included in the low noise amplifier 500B shown in FIG. 11B The M _A1 ' transistor and the M _A2 ' transistor are of different widths. As an example, the width of the M _A1 ″ transistor and the width of the M _A2 ″ transistor can be set such that the first non-linearity cause signal NCS1 ″ generated by the first input amplifier 512C has a positive sign and is generated by the second The second nonlinearity cause signal NCS2 ″ generated by the input amplifier 514C has a negative sign, and the absolute value of the first nonlinearity cause signal NCS1 ″ is smaller than the absolute value of the second nonlinearity cause signal NCS2 ″. As an example, the width of the 'M _A1 '' transistor may be smaller than the width of the M _A2 '' transistor. As a result, the third radio frequency amplified signal RF _{IN_B3} ″ generated by the first amplifier 510C may include the third non-linearity cause signal NCS3 ″ having a predetermined negative value.

The amplifier 522C can amplify the third radio frequency amplified signal RF _{IN_B3} ″ to output a radio frequency output signal RF _OUT ″ _″ . The width of the M _B1 '' transistor can be set such that the fourth non-linearity cause signal NCS4'' produced by the amplifier 522C has a sign different from that of the third amplified non-linearity cause signal BNCS3'' and has An absolute value equal to the absolute value of the third amplified non-linearity cause signal BNCS3''. As an example, as explained above with reference to FIG. 10, the width of the M _B1 '' transistor may be set such that gm'' of the M _B1 '' transistor has a negative value. Therefore, the fourth nonlinearity cause signal NCS4 ″ and the third amplified nonlinearity cause signal BNCS3 ″ may cancel each other out, and the radio frequency output signal RF _OUT ″ may only include the fundamental output signal FS _OUT ″. Therefore, the linearity of the low noise amplifier 500C can be improved. However, the inventive concept is not limited to the LNA embodiment described with reference to FIGS. 11A-11C . Additionally, various embodiments may be provided in which a first cancellation between non-linearity-causing signals in a first amplifier and a second cancellation between non-linearity-causing signals in a second amplifier .

12A to 12C are detailed circuit diagrams of low noise amplifiers 600A, 600B and 600C according to exemplary embodiments of the present invention.

Referring to FIG. 12A , the low noise amplifier 600A includes a first amplifying unit 610A and a second amplifying unit 620A. 12A to 12C illustrate only one amplification circuit among a plurality of amplification circuits included in the second amplification unit 620A. The first amplifying unit 610A includes a first input amplifier 612A, a second input amplifier 614A and a feedback circuit 616A. The feedback circuit 616A may include a resistor device R _F (eg, a resistor) and a capacitor device C _F . The resistor means R _F and the capacitor means _CF may be connected to each other in series. The feedback circuit 616A is connected to the Y node and the X node to be connected in parallel to the first input amplifier 612A and the second input amplifier 614A. The configurations of the first input amplifier 612A and the second input amplifier 614A have been explained above with reference to FIGS. 11A to 11C , and therefore, will not be described in detail here.

The second amplifying unit 620A includes an amplifier 622A and a current buffer 624A. Current buffer 624A may include M _B2 transistor which is an NMOS transistor. The M _B2 transistor may form a cascode structure with the M _B1 transistor of amplifier 622A, and may be referred to as a cascode transistor. As an example, the M _B2 transistor can be controlled on/off according to the switch control signal SWCS2. The second amplifying unit 620A can be enabled or disabled by controlling on/off of the M _B2 transistor.

12B, when compared with the configuration of the low-noise amplifier 600A shown in FIG. 626B. The first interconnection circuit 617B may include a _CC1 coupling capacitor having a capacitance large enough to have an impedance smaller than the transconductance (or 1/gm) of the _MA1 transistor. The second interconnection circuit 618B may include a C _C2 coupling capacitor having a capacitance large enough to have an impedance smaller than the transconductance (or 1/gm) of the _MA2 transistor. Additionally, the first interconnection circuit 626B may include a C _C3 coupling capacitor having a capacitance large enough to have an impedance smaller than the transconductance (or 1/gm) of the M _B1 transistor.

As explained above with reference to FIG. 8B , the input impedance Z _IN1 of the first amplifying unit 610B can have a constant target impedance due to the feedback circuit 616A. Therefore, the amplification gain of the first amplifying unit 610B can have a constant value to improve the linearity of the low noise amplifier 600B. In addition, regarding the input impedance Z _IN2 of the second amplifying unit 620B, as explained above with reference to FIG. The output impedance Z _OUT of the amplifying unit 610B has a much larger impedance value. Therefore, the second amplifying unit 620B may include a plurality of amplifying circuits (not shown in the figure), and may include multiple amplifying circuits even when one amplifying circuit (for example, an amplifying circuit including the amplifier 622B and the current buffer 624B) is enabled or disabled. an amplifier circuit. The input impedance Z _IN2 of the second amplifying unit 620B is very large, and thus, the amount of current flowing in other amplifying circuits varies. Therefore, each of the amplifying circuits included in the second amplifying unit 620B may have an amplifying gain of a constant value, thereby improving the linearity of the low-noise amplifier 600B.

Referring to FIG. 12C , compared with the low noise amplifier 600A shown in FIG. 12A , the second amplifying unit 620C may further include a current steering circuit 626C. The current steering circuit 626C includes an M _B3 transistor, and the on/off of the M _B3 transistor can be controlled according to the switch control signal SWCS3. In more detail, the M _B3 transistor can be turned on if it is desired to reduce the magnitude of the radio frequency output signal RF _OUT . That is, when the M _B3 transistor is turned on, some of the current flowing in the amplifier 622C flows toward the current steering circuit 626C, and thus, may output a radio frequency output signal RF _OUT having a magnitude wherein The magnitude is less than the magnitude of the output when the M _B3 transistor is turned off. The amplification gain of the second amplification unit 620C can be adjusted by using the current steering circuit 626C.

FIG. 13 is a detailed circuit diagram of the low noise amplifier 700 according to an exemplary embodiment of the present invention, and FIGS. 14A and 14B are circuit diagrams illustrating an amplification operation of the low noise amplifier 700. Referring to FIG.

Referring to FIG. 13 , the low noise amplifier 700 includes a first amplifying unit 710 and a second amplifying unit 720 . The first amplifying unit 710 includes a first input amplifier 712 , a second input amplifier 714 , a feedback circuit 716 , and interconnection circuits 717 and 718 . The structure of the first amplifying unit 710 is the same as that described above with reference to FIG. 12A , and will not be described in detail again.

The second amplifying unit 720 includes a plurality of amplifying circuits 720_1, 720_2, . . . , 720_M. The amplification circuits 720_1 to 720_M may respectively include amplifiers 722_1 , 722_2 , . . . , 722_M, current buffers 724_1 , 724_2 , . The first amplifier 722_1 may include a transistor M _{B1_1} , the second amplifier 722_2 may include a transistor M _{B1_2} , and the Mth amplifier 722_M may include a transistor M _{B1_M} . The first current buffer 724_1 may include a transistor M _{B2_1} , the second current buffer 724_2 may include a transistor M _{B2_2} , and the Mth current buffer 724_M may include a transistor M _{B2_M} . The first interconnection circuit 726_1 may include a capacitor C _{C3_1} , the second interconnection circuit 726_2 may include a capacitor C _{C3_2} , and the Mth interconnection circuit 726_M may include a capacitor C _{C3_M} . Although not shown in FIG. 13 , each of the amplifying circuits 720_1 to 720_M may further include a current steering circuit 626C shown in FIG. 12C . The enabling and disabling of the amplifying circuits 720_1 to 720_M of the second amplifying unit 720 can be controlled according to switch control signals SWCS2_1, SWCS2_2, . The amplified radio frequency input signal and the amplified radio frequency input signal are amplified to output radio frequency output signals RF _OUT1 to RF _OUTM .

FIG. 14A is a diagram illustrating the amplification operation of the LNA 700 in a non-CA or inter-band CA form. Referring to FIG. 14A , the first amplifying unit 710 receives a radio frequency input signal RF _IN through a first carrier ω1 in a predetermined frequency band. As described above, the first amplifying unit 710 can amplify the radio frequency input signal RF _IN and cancel the nonlinear factor generated during the amplification. In an embodiment, only the first amplifying circuit 720_1 of the amplifying circuits 720_1 to 720_M of the second amplifying unit 720 is enabled by the switch control signal SWCS2_1 , and the other amplifying circuits 712_2 to 720_M are disabled by the switch control signals SWCS2_2 to SWCS2_M. The first amplifying circuit 720_1 receives the amplified radio frequency input signal from the first amplifying unit 710, amplifies the amplified radio frequency input signal, and cancels a nonlinear factor generated during amplification and a pre-existing nonlinear factor. The first amplifying circuit 720_1 can output the first radio frequency output signal RF _OUT1 corresponding to the first carrier ω1.

FIG. 14B is a diagram illustrating the amplification operation of the low noise amplifier 700 in the form of in-band carrier aggregation. Referring to FIG. 14B , the first amplifying unit 710 receives a radio frequency input signal RF _IN transmitted through a first carrier ω1 and a second carrier ω2 in a predetermined frequency band. As described above, the first amplifying unit 710 can amplify the radio frequency input signal RF _IN and cancel the nonlinear factor generated during the amplification. In an embodiment, only the first amplifying circuit 720_1 and the second amplifying circuit 720_2 among the amplifying circuits 720_1 to 720_M of the second amplifying unit 720 are enabled by the switch control signals SWCS2_1 and SWCS2_2, and the other amplifying circuits 720_M are disabled by the switch control signal SWCS2_M . The first amplifying circuit 720_1 and the second amplifying circuit 720_2 receive the amplified radio frequency input signal from the first amplifying unit 710, amplify the amplified radio frequency input signal, and cancel the nonlinear factor generated during the amplification and the pre-existing nonlinear factor. The first amplifying circuit 720_1 outputs a first radio frequency output signal RF _OUT1 corresponding to the first carrier ω1, and the second amplifying circuit 720_2 outputs a second radio frequency output signal RF OUT2 corresponding to the second carrier _ω2 .

FIG. 15 is a flowchart illustrating the operation of a wireless communication device according to an exemplary embodiment of the present invention.

Referring to FIG. 15 , the first amplifying unit included in the amplifier block of the wireless communication device receives a radio frequency input signal, and amplifies the radio frequency input signal into a first radio frequency amplified signal and a second radio frequency amplified signal, so The first radio frequency amplified signal includes a first non-linearity factor, the second radio frequency amplified signal includes a second non-linearity factor, the second non-linearity factor has a Symbols with different symbols (S100). The first amplifying unit generates a third radio frequency amplified signal by combining the first radio frequency amplified signal with the second radio frequency amplified signal, the third radio frequency amplified signal comprising the first nonlinearity factor and the second nonlinearity factor The result of the factors canceling each other (or the third non-linearity factor) (S110). The second amplifying unit included in the amplifier block receives the third radio frequency amplified signal from the first amplifier and amplifies the third radio frequency amplified signal to generate a radio frequency output signal corresponding to a predetermined carrier (S120). The output circuit included in the wireless communication device receives the radio frequency output signal from the second amplifying unit, and down-converts the radio frequency output signal to generate a baseband signal (S130).

FIG. 16 is a flowchart illustrating operation S120 shown in FIG. 15 according to an exemplary embodiment of the present invention.

Referring to FIG. 16, after operation S110, the second amplifying unit amplifies the third radio frequency amplified signal such that the sign of the amplified third non-linearity factor is different from the fourth non-linearity factor generated when amplifying the third radio frequency amplified signal. Sign of the linearity factor (S122). The second amplifying unit generates a radio frequency output signal including a result of canceling the amplified third nonlinearity factor and the fourth nonlinearity factor ( S124 ). Thereafter, operation S130 may be performed.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10‧‧‧Wireless Communication System 100, 200‧‧‧Wireless Communication Device 110, 112‧‧‧Base Station 114‧‧‧Broadcasting Station 120‧‧‧System Controller 130‧‧‧Satellite 210‧‧‧Main Antenna 212‧‧ ‧Auxiliary antenna 220, 250‧‧‧Transceiver 222, 420, 520‧‧‧Antenna interface circuit 224a~224k, 254a~254l, 500A, 500B, 500C, 600A, 600B, 600C, 700‧‧‧Low noise amplifier 225a~225k, 255a~255l‧‧‧receiving circuit 226a‧‧‧power amplifier 227a‧‧‧transmitting circuit 230a‧‧‧receiver/first receiver 230b~230k, 260a~260l, 400, 400', 500‧ ‧‧Receiver 240a‧‧‧Transmitter/First Transmitter 240b~240k, 270a~270l‧‧‧Transmitter 280‧‧‧Data Processor 282‧‧‧Memory 410, 510‧‧‧Antenna 430‧‧ ‧Input matching circuit 440‧‧‧carrier aggregation low noise amplifier/low noise amplifier 442, 442A, 442B, 510A, 610A, 610B, 710‧‧‧first amplifying unit 442_1A, 442_1B, 512A, 512B, 512C, 612A , 712‧‧‧first input amplifier 442_2A, 442_2B, 514A, 514B, 514C, 614A, 714‧‧‧second input amplifier 442_3B, 616A, 716‧‧‧feedback circuit 443, 446_1, 446_1A, 446_1B, 446_2~446_M , 446_1', 446_2'~446_M', 720_3~720_M‧‧‧amplifier circuit 444'‧‧‧switch unit 446, 446A, 446B, 520A, 520B, 520C, 620A, 620B, 620C, 720‧‧‧second amplifier Unit 446_11A, 522A, 522B, 522C, 622A, 622B, 622C‧‧‧amplifier 446_12B, 624A, 624B‧‧‧current buffer 450_1, 450_2~450_M‧‧‧output circuit 451_1, 451_2~451_M‧‧‧load circuit 452_1 , 552_1‧‧‧down converter circuit/first down converter circuit 452_2~452_M‧‧‧down converter circuit/second down converter circuit~Mth down converter circuit 453_1, 453_2~453_M, 454_1, 454_2~ 454_M‧‧‧mixer 455_1, 455_2~455_M, 456_1, 456_2~456_M‧‧‧baseband filter 510B, 510C‧‧‧first amplifier 530A‧‧‧switch 530_1‧‧‧first input matching circuit /Input matching circuit 530_N‧‧‧Nth input matching circuit/input matching circuit 540‧‧‧multi-input multi-output low noise amplifier 550_1‧‧‧output circuit/first output circuit 550_2‧‧‧output circuit/second output Circuit 550_3‧‧‧output circuit/third output circuit 550_4‧‧‧output circuit/fourth output circuit 550_5~550_M‧‧‧output circuit/fifth output circuit~Mth output circuit 551_1‧‧‧load circuit/first Load circuit 551_2‧‧‧load circuit/second load circuit 551_3‧‧‧load circuit/third load circuit 551_4‧‧‧load circuit/fourth load circuit 551_5~551_M‧‧‧load circuit/fifth load circuit~the first M load circuit 552_2‧‧‧down converter circuit/second down converter circuit 552_3‧‧‧down converter circuit/third down converter circuit 552_4‧‧‧down converter circuit/fourth down converter circuit 552_5~ 552_M‧‧‧down-converter circuit/fifth down-converter circuit~Mth down-converter circuit 617B, 626B‧‧‧first interconnection circuit 618B‧‧‧second interconnection circuit 626C‧‧‧current guiding circuit 717 , 718‧‧‧interconnection circuit 720_1‧‧‧first amplifier circuit/amplifier circuit 720_2‧‧‧second amplifier circuit/amplifier circuit 722_1‧‧‧amplifier/first amplifier 722_2~722_M‧‧‧amplifier/second amplifier ~mth amplifier 724_1‧‧‧current buffer/first current buffer 724_2~724_M‧‧‧current buffer/second current buffer~mth current buffer 726_1‧‧‧interconnection circuit/first interconnection Circuits 726_2~726_M‧‧‧interconnection circuit/second interconnection circuit~mth interconnection circuit AMPB, AMPB_9~AMPB_N‧‧‧amplifier block AMPB_1‧‧‧amplifier block/first amplifier block AMPB_2‧‧‧ Amplifier block/second amplifier block AMPB_3‧‧‧amplifier block/third amplifier block AMPB_4‧‧‧amplifier block/fourth amplifier block AMPB_5‧‧‧amplifier block/fifth amplifier block AMPB_6‧ ‧‧amplifier block/sixth amplifier block AMPB_7‧‧‧amplifier block/seventh amplifier block AMPB_8‧‧‧amplifier block/eighth amplifier block BNCS3', BNCS3''‧‧‧the third is amplified Non-linearity cause signal BNLF3‧‧‧Third amplified nonlinearity factor/Amplified third nonlinearity factor C _C1 , C _C2 , C _C3 ‧‧‧Coupling capacitors C _{C3_1} , C _{C3_2} , C _{C3_M} ‧‧ ‧Capacitor C _F ‧‧Capacitor device EN/DIS_CS ‧‧Enable/disable control signal FS _{IN_B1} ‧‧First fundamental signal FS _{IN_B2} ‧‧ ‧Second fundamental signal FS _{IN_B3} ‧‧‧Third fundamental signal FS _OUT , FS _OUT ''‧‧‧Fundamental output signal FNLF‧‧‧Final nonlinearity factor ILO1‧‧‧In-phase local oscillator signal M _A1 , M _A1 ', M _A1 '', M _A2 , M _A2 ', M _A2 '', M _B1 , M _B1 ', M _B1 '', M _B2 , M _B3 , M _{B1_1} , M _{B1_2} , M _{B1_M} , M _{B2_1} 、 M _{B2_2} 、 M _{B2_M} ‧‧‧transistor NCS1, NCS1', NCS1''‧‧‧first non-linearity cause signal NCS2, NCS2', NCS2''‧‧‧second non-linearity cause signal NCS3‧ ‧‧Nonlinearity Cause Signal NCS3', NCS3''‧‧‧The Third Nonlinearity Cause Signal NCS4, NCS4', NCS4''‧‧The Fourth Nonlinearity Cause Signal NLF1‧‧‧The First Nonlinearity Factor NLF2‧‧‧Second Nonlinearity Factor NLF3‧‧‧Third Nonlinearity Factor NLF4‧‧‧Fourth Nonlinearity Factor QLO1‧‧‧Quadrature Local Oscillator Signal R _F ‧‧‧Resistor Device RF _IN , RF _IN4 ~RF _INN ‧‧‧radio frequency input signal RF _IN1 ‧‧‧radio frequency input signal/first radio frequency input signal RF _IN2 ‧‧‧radio frequency input signal/second radio frequency input signal RF _IN3 ‧‧ ‧Radio Frequency Input Signal/Third Radio Frequency Input Signal RF _{IN_B1} ‧‧‧First Radio Frequency Amplified Signal RF _{IN_B2} ‧‧‧Second Radio Frequency Amplified Signal RF _{IN_B3} , RF _{IN_B3} ', RF _{IN_B3} ''‧‧‧Third Radio frequency amplified signal RF _OUT , RF _OUT ', RF _OUT ''‧‧‧radio frequency output signal RF _OUT1 ‧‧‧radio frequency output signal/first radio frequency output signal RF _OUT2 ‧‧‧radio frequency output signal/second Radio Frequency Output Signal RF _OUT3 ‧‧‧Radio Frequency Output Signal/Third Radio Frequency Output Signal RF _OUT4 ~RF _OUTM ‧‧‧Radio Frequency Output Signal RX _IN ‧‧‧Receiver Input Signal RX _IN1 ‧‧‧First Receiver Input signal/receiver input signal RX _INN ‧‧‧Nth receiver input signal/receiver input signal S100, S110, S120, S122, S124, S130‧‧‧Step SW, SW ₁ , SW ₂ ~SW _M ‧‧ ‧Switch devices SWCS, SWCS2, SWCS3, SWCS2_1, SWCS2_2~SWCS2_M‧‧‧Switch control signal TR _WD1 ‧‧‧ The first transistor TR _WD2 ‧‧‧the second transistor V _DD ‧‧‧power supply voltage V _GS1 ‧‧‧the first bias voltage V _GS2 ‧‧‧the second bias voltage V _R ‧‧‧predetermined reference value WD1‧‧‧ First width WD2‧‧‧Second width X, Y‧‧‧Nodes XBAS _OUT1 , XBAS _OUT2 , XBAS _OUT3 ~XBAS _OUTM ‧‧‧Baseband signal XMOD‧‧‧Mode control signal Z _IN , Z _IN1 , Z _IN2 ‧‧ ‧Input impedance Z _OUT ‧‧‧Output impedance ω1‧‧‧First carrier/carrier ω2‧‧‧Second carrier/carrier ω3‧‧‧Third carrier/carrier

FIG. 1 is a diagram of a wireless communication device and a wireless communication system including the wireless communication device according to an exemplary embodiment of the present invention. 2A to 2F are diagrams illustrating a carrier aggregation (CA) technique according to an exemplary embodiment of the present invention. FIG. 3 is a block diagram of an example of the wireless communication device shown in FIG. 1 . FIG. 4 is a block diagram of a receiver according to an exemplary embodiment of the present invention. 5A and 5B are block diagrams of the receiver shown in FIG. 4 according to an exemplary embodiment of the present invention. FIG. 6 is a block diagram of a receiver according to an exemplary embodiment of the present invention. FIG. 7A is a block diagram of the receiver shown in FIG. 6 according to an exemplary embodiment of the present invention. Figure 7B is a block diagram illustrating the operation of a receiver in the form of inter-band carrier aggregation. Figure 7C is a block diagram illustrating the operation of a receiver in the form of in-band carrier aggregation. 8A and 8B are block diagrams of the first amplifier shown in FIG. 5A according to an exemplary embodiment of the present invention. 9A and 9B are block diagrams of the second amplifier shown in FIG. 5A according to an exemplary embodiment of the present invention. FIG. 10 is a graph illustrating a non-linearity factor to be compensated according to an exemplary embodiment of the present invention. 11A to 11C are detailed circuit diagrams of a low noise amplifier (LNA) according to an exemplary embodiment of the present invention. 12A to 12C are detailed circuit diagrams of a low noise amplifier according to an exemplary embodiment of the present invention. FIG. 13 is a detailed circuit diagram of a low noise amplifier according to an exemplary embodiment of the present invention. 14A and 14B are circuit diagrams illustrating the amplification operation of the low noise amplifier. FIG. 15 is a flowchart illustrating the operation of a wireless communication device according to an exemplary embodiment of the present invention. FIG. 16 is a flowchart illustrating operation S120 shown in FIG. 15 according to an exemplary embodiment of the present invention.

400‧‧‧Receiver

440‧‧‧Carrier Aggregation Low Noise Amplifier / Low Noise Amplifier

442‧‧‧The first amplification unit

443, 446_1, 446_2, 446_M‧‧‧amplifier circuit

446‧‧‧Second amplifier unit

450_1, 450_2, 450_M‧‧‧output circuit

451_1, 451_2, 451_M‧‧‧load circuit

452_1‧‧‧down-converter circuit/first down-converter circuit

452_2, 452_M‧‧‧down-converter circuit/second down-converter circuit, Mth down-converter circuit

453_1, 453_2, 453_M, 454_1, 454_2, 454_M‧‧‧mixer

455_1, 455_2, 455_M, 456_1, 456_2, 456_M‧‧‧Baseband filter

AMPB‧‧‧amplifier block

EN/DIS_CS‧‧‧enable/disable control signal

ILO1‧‧‧in-phase local oscillator signal

QLO1‧‧‧Quadrature local oscillator signal

RF _IN ‧‧‧radio frequency input signal

RF _OUT1 ‧‧‧radio frequency output signal/first radio frequency output signal

RF _OUT2 ‧‧‧radio frequency output signal/second radio frequency output signal

RF _OUTM ‧‧‧radio frequency output signal

X‧‧‧node

XBAS _OUT1 , XBAS _OUT2 , XBAS _OUTM ‧‧‧Baseband signal

Claims (23)

A wireless communication device comprising: an amplifier block configured to receive a radio frequency input signal transmitted using at least one carrier and to amplify the radio frequency input signal to generate at least one radio frequency output signal, wherein the amplifier block includes : a first amplifying unit configured to amplify the radio frequency input signal to generate a first radio frequency amplified signal and a second radio frequency amplified signal, and to amplify the first radio frequency amplified signal and the second radio frequency amplified signal The amplified signals are combined to produce a third radio frequency amplified signal, the first radio frequency amplified signal includes a first non-linearity factor, the second radio frequency amplified signal includes a first non-linearity factor different from the first non-linearity factor two non-linearity factors, and the second non-linearity factor is used to cancel the first non-linearity factor; and a second amplifying unit configured to receive the third radio frequency amplified signal and amplify the first non-linearity factor Three radio frequency amplified signals to generate a radio frequency output signal corresponding to the at least one carrier, wherein the third radio frequency amplified signal includes a third non-linearity factor, wherein the second amplifying unit amplifies the first Three radio frequencies amplify the signal while generating a fourth non-linearity factor different from the third non-linearity factor, and the fourth non-linearity factor is used to cancel the amplified third non-linearity factor. The wireless communication device described in item 1 of the scope of the patent application, wherein The sign of the first non-linearity factor and the sign of the second non-linearity factor are opposite to each other, and wherein the combination is obtained by combining the first radio frequency amplified signal with the second radio frequency amplified signal Calais to execute. The wireless communication device according to claim 2, wherein the absolute value of the first nonlinearity factor and the absolute value of the second nonlinearity factor are equal to each other. The wireless communication device according to claim 1 of the scope of the patent application, wherein the first amplifying unit includes: a first input amplifier configured to receive the radio frequency input signal and amplify the radio frequency input signal to output the the first radio frequency amplified signal; and a second input amplifier connected in parallel to the first input amplifier and configured to receive the radio frequency input signal and amplify the radio frequency input signal to output the second Radio frequency amplifies the signal. The wireless communication device according to claim 4, wherein the output node of the first input amplifier is connected to the output node of the second input amplifier. The wireless communication device as described in item 4 of the patent scope of the application, wherein the first input amplifier includes a first transistor with a first width, the first transistor has a gate, and the radio frequency input signal is applied to the the gate, the second input amplifier includes a second transistor with a second width, and the first Two transistors have gates to which the radio frequency input signal is applied, wherein the second width is different from the first width, and the operating region of the first transistor is different from the first width. The working area of the second transistor. The wireless communication device according to item 6 of the scope of patent application, wherein the first transistor is configured to amplify the radio frequency input signal into the first radio frequency amplified signal, and the first radio frequency amplified signal including said first nonlinearity factor having a first sign, and said second transistor configured to amplify said radio frequency input signal into said second radio frequency amplified signal, said second radio frequency amplified The signal includes the second nonlinearity factor having a second sign different from the first sign. The wireless communication device as described in item 4 of the patent scope of the application, wherein the first amplifying unit further includes a feedback circuit connected in parallel to the first input amplifier and the second input amplifier, and the feedback circuit includes at least one Resistor means and at least one capacitor means. The wireless communication device according to claim 1, wherein the sign of the fourth non-linearity factor is opposite to that of the amplified third non-linearity factor, and wherein the output radio frequency signal The final non-linearity factor is the result of adding the fourth non-linearity factor and the amplified third non-linearity factor. The wireless communication device according to claim 9, wherein the absolute value of the fourth nonlinearity factor is equal to the amplified absolute value of the third nonlinearity factor. The wireless communication device described in item 1 of the scope of the patent application, wherein the second amplifying unit includes a plurality of amplifying circuits, each of the amplifying circuits includes a transistor, and the transistor has a gate, so The third radio frequency amplified signal is applied to the gate, and the transistor has a width such that the fourth nonlinearity factor has an opposite sign to the amplified third nonlinearity factor. The wireless communication device according to claim 11, wherein each of the plurality of amplifying circuits further includes a current buffer connected in series to the transistor, and the current buffer is configured based on the slave A switch control signal transmitted from an external source is turned on or off to enable or disable each of the amplifying circuits. The wireless communication device according to claim 1 of the patent application, wherein the input impedance of the second amplifying unit is greater than the output impedance of the first amplifying unit. The wireless communication device according to claim 1, further comprising an output circuit for outputting the radio frequency output signal after down-converting the radio frequency output signal into a baseband signal. The wireless communication device described in item 1 of the scope of the patent application further includes: at least one antenna configured to receive radio frequency data; an antenna interface circuit configured to filter the radio frequency data according to a predetermined frequency bandwidth; and an input matching circuit configured to perform impedance matching between the at least one antenna and the amplifier block, and utilize The radio frequency data is filtered by the antenna interface circuit to generate the radio frequency input signal. A receiver for receiving a radio frequency input signal and processing the radio frequency input signal based on a carrier aggregation mode, wherein the receiver includes: a plurality of amplifier blocks, wherein each of the plurality of amplifier blocks or comprising: a first amplifying unit comprising at least two input amplifiers having different properties from each other such that a plurality of non-linearity factors generated when amplifying said radio frequency input signal have different signs from each other, said first amplifying unit configured to perform a first cancellation of the plurality of non-linearity factors and amplify the radio frequency input signal into a radio frequency amplified signal using the at least two input amplifiers; and a second amplification unit comprising a plurality of amplification circuits , each of the plurality of amplifying circuits includes at least one amplifier configured to receive the radio frequency amplified signal and amplify the radio frequency amplified signal to output a radio frequency output signal corresponding to a predetermined carrier, wherein The radio frequency amplified signal includes a third non-linearity factor, and the second amplifying unit is configured to perform, with the at least one amplifier, a fourth non-linearity factor generated when amplifying the radio frequency amplified signal and the Say nothing A second cancellation between the amplified third non-linearity factor of the line frequency amplified signal. The receiver according to claim 16, wherein said at least one amplifier has predetermined characteristics such that said fourth non-linearity factor produced when amplifying said radio frequency amplified signal is equal to said radio frequency amplified The amplified third non-linearity factors of the signal have different signs from one another. The receiver according to claim 17, wherein the amplifier includes a transistor having a gate to which the radio frequency amplified signal is applied, and the transistor has a predetermined width, wherein said transistor produces said fourth nonlinearity having a sign different from that of said amplified third nonlinearity factor of said radio frequency amplified signal when amplifying said radio frequency amplified signal factor. The receiver of claim 16, wherein each of said at least two input amplifiers includes a transistor having a gate to which said radio frequency input signal is applied poles, and the transistors have different widths from each other, so that the operating regions of the transistors are different from each other. The receiver of claim 16, wherein when the receiver is in an in-band mode and receives a radio frequency signal transmitted using a first carrier and a second carrier in a first frequency band, A first amplifier block of the plurality of amplifier blocks is enabled to receive a first radio frequency input signal included in the radio frequency signal, the first amplification unit of the first amplifier block is further configured to amplify the first radio frequency input signal to output a first radio frequency amplified signal to the second amplifying unit, and a plurality of A first amplifying circuit and a second amplifying circuit in the amplifying circuit are enabled, the first amplifying circuit is configured to receive and amplify the first radio frequency amplified signal to output a first radio frequency corresponding to the first carrier output signal, and the second amplifying circuit is configured to receive and amplify the first radio frequency amplified signal to output a second radio frequency output signal corresponding to the second carrier. A wireless communication device comprising: a first amplifier including a first complementary transistor having a first width, the first amplifier configured to amplify an input radio frequency signal to generate a first amplified radio frequency signal, said input radio frequency signal is transmitted using at least one carrier; a second amplifier comprising a non-complementary transistor having a second width different from said first width, said second amplifier being configured to amplify the input radio frequency signal to produce a second amplified radio frequency signal, wherein the second amplified radio frequency signal includes a second non-linearity factor for canceling a non-linearity factor included in the first amplified radio frequency signal a first nonlinearity factor; and A third amplifier comprising a second complementary transistor configured to receive the first amplified radio frequency signal and the second amplified radio frequency signal and output a third amplified radio frequency signal, wherein the The signal formed by the sum of the first amplified radio frequency signal and the second amplified radio frequency signal includes a third non-linearity factor, and the third amplified radio frequency signal includes a fourth non-linearity factor for The amplified third non-linearity factor is cancelled. The wireless communication device according to claim 21, wherein the first width and the second width are set so that the sign of the first nonlinearity factor of the first amplified radio frequency signal is the same as The sign of the second nonlinearity factor of the second amplified radio frequency signal is opposite. The wireless communication device according to claim 22, wherein the width of the second complementary transistor is set such that the sign of the amplified third nonlinearity factor is the same as that of the fourth nonlinearity factor sign is opposite.

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