TWI786773B - Inspection method and inspection equipment of flux distribution - Google Patents

Abstract

The present invention discloses a method and an apparatus for inspecting flux distribution, which can be used to visualize the flux on the surface of electronic components for subsequent determination of the flux distribution area. For the bump area of the electronic component, the first bump area image capturing method with low-angle irradiating light or the second bump area image capturing method with high-angle irradiating light are selected according to the predetermined thickness of the applied flux. The first bump area image capturing method uses an image capturing angle of 80 to 100 degrees with the carrier board of the electronic component to obtain images. The second bump area image capturing method uses an image capturing angle of 60 to 70 degrees with the carrier board of the electronic component to obtain images. For the non-bump area of electronic component, light is irradiated at a high angle and image is acquired at a capturing angle of 80 to 100 degrees. In this inspection way with different inspection conditions, the distribution of the flux in the bump area and the non-bump area can be accurately displayed.

Description

Detection method and detection equipment for flux distribution

The present invention relates to a detection method and detection equipment, more particularly to a detection method and detection equipment for displaying flux distribution in the semiconductor packaging structure manufacturing process.

Flux (Flux) is a common auxiliary material used to ensure the smooth progress of the soldering process, and is also a commonly used auxiliary material in the process of assembling various electronic components on the substrate. The role of the flux can remove the oxides on the surface of the solder and the base metal to be welded, so that the metal surface can reach a certain degree of cleanliness, which also makes the flux have the function of improving the welding quality, which in turn can affect the electrical connection between the electronic component and the substrate. The connection quality of the sexual connection.

In the semiconductor manufacturing process, the semiconductor package structure with the chip also has a plurality of bumps that are respectively coupled to the corresponding contacts of the chip. The areas of these bumps need to be coated with flux, so that in the subsequent soldering steps, the These bumps are successfully soldered to the substrate, completing the bonding between the contacts. With the gradual improvement of the overall semiconductor process capability, the requirements for packaging accuracy are becoming more and more stringent. When the flux is not applied correctly, it will easily lead to a decrease in the process yield or cause irreversible destructive damage to the chip. Therefore, the coating condition of the flux needs to be effectively detected.

It is an object of the present invention to enable the distribution of flux to be visualized.

Another object of the present invention is to improve the recognition of flux distribution.

In order to achieve the above purpose and other purposes, the present invention proposes a detection method for flux distribution, which is used to display the flux on the surface of at least one electronic component in a detection area, and the surface of the at least one electronic component defines a bump area and a non-bump area, the detection method includes: a step of taking an image of the bump area and a step of taking an image of the non-bump area. The bump area imaging step is to use one of a first bump area imaging method and a second bump area imaging method to image the bump area, wherein when the coated When the predetermined thickness of the soldering flux is less than a thickness threshold value, the imaging method of the first bump area is carried out, and the imaging method of the first bump area adopts an incident angle of 45-75° to the carrier board of the electronic component. A first type of irradiating light of 100 degrees irradiates the detection region, and obtains a first image at an imaging angle of 80 to 100 degrees with the carrier board of the electronic component, wherein, when the predetermined amount of flux coated When the thickness is greater than or equal to the thickness threshold value, the second bump area imaging method is carried out, and the second bump area imaging method adopts an incident angle of 80 to 90 degrees to the carrier board of the electronic component. The second type of irradiating light irradiates the detection area, and obtains a second image at an imaging angle of 60-70 degrees with the carrier plate of the electronic component. The non-bump area imaging step is to irradiate the detection area with the first type of irradiating light, and acquire a third image at an imaging angle of 80-100 degrees with the electronic component carrier. Wherein, the obtained first image or the second image is used for determining the flux distribution area of the bump area, and the obtained third image is used for determining the flux distribution area of the non-bump area.

In an embodiment of the present invention, the thickness threshold may be one of 1.8-10 (μm).

According to an embodiment of the present invention, the brightness of the first type of irradiating light used in the imaging method of the first bump area is the first brightness, and the brightness of the first type of illumination light used in the imaging step of the non-bump area is The brightness of one type of irradiating light is the second brightness, and the first brightness may be smaller than the second brightness.

According to an embodiment of the present invention, the third image includes images of the bump area and the non-bump area, and in the non-bump area located at the edge of the detection area, the second brightness can be set to enable The gray scale value of the pixel in the image without flux coating is between 150~254, wherein the second brightness can be set to make the pixel of the bump area appear in the image The grayscale value is greater than 254.

According to an embodiment of the present invention, the second type of illumination light in the second bump area imaging mode can be provided by a low-angle light source module surrounding the periphery of the detection area. The second type of illumination light can be a non-ring light. The non-ring light means that a light-emitting unit on a side of the low-angle light source module adjacent to the detection area does not provide illumination to the detection area, and the side of the detection area is an imaging side opposite to the second image.

According to an embodiment of the present invention, it may further include a whole-area imaging step, which is to irradiate the detection area with the second type of irradiating light, and take an image at an angle of 80 to 100 degrees with the carrier plate of the electronic component. Obtaining a fourth image, wherein the fourth image is based on the determination of whether there is foreign matter in the bump area and the non-bump area of the electronic component.

According to an embodiment of the present invention, the first type of irradiating light in the imaging mode of the first bump area and the imaging step of the non-bump area can be illuminated by a surrounding high-angle beam surrounding the detection area. The light source module is provided. The second type of illumination light in the whole-area imaging step can be provided by a surrounding low-angle light source module surrounding the detection area. The surround-type high-angle light source module is high In the surrounding low-angle light source module, the detection area only covers the two electronic components arranged side by side on a conveying path.

According to an embodiment of the present invention, the first type of illumination light in the imaging mode of the first bump area can be provided by a parallel high-angle light source module above two opposite sides of the detection area. The second type of illumination light in the whole area imaging step can be provided by a parallel low-angle light source module above two opposite sides of the detection area. The parallel high-angle light source module is higher than the parallel low-angle light source module, wherein the detection area covers at least three or more electronic components arranged in a group on a conveying path.

According to an embodiment of the present invention, under the condition that the first bump region imaging method is adopted in the bump region image capturing step, the bump region image capturing step and the non-bump region image capturing step can be performed And before the whole region imaging step, an additional imaging step is further included. The additional imaging step is to irradiate the detection area with the first type of irradiating light or the second type of irradiating light, and obtain a fifth image at an imaging angle of 80-100 degrees with the carrier plate of the electronic component . The fifth image is used to determine whether the detection area covers the bump area and the non-bump area of the at least one electronic component, wherein the detection area only covers part of the surface of the electronic component.

In order to achieve the above and other purposes, the present invention further proposes a detection device for flux distribution, which is used to implement the detection method using the first bump area imaging method. The detection device is arranged above a platform defined for placing at least one electronic component, and the detection device is used to visualize the solder flux on the surface of the at least one electronic component in a detection area and obtain corresponding image data For subsequent determination of the flux distribution area, the surface of the at least one electronic component defines a bump area and a non-bump area, the detection area is defined on the carrier platform, and the detection equipment includes: a first sampling image module, a high-angle light source module, and a low-angle light source module. The first imaging module can be equipped with Placed above the detection area, the first imaging module is configured to acquire images at an imaging angle of 80° to 100° with the carrier board of the electronic component. The high-angle light source module can be configured to provide a first type of irradiating light with an incident angle of 45-75 degrees to the carrier board of the electronic component to irradiate the detection area. The low-angle light source module can be configured to provide a second type of irradiating light with an incident angle of 80-90 degrees to the carrier board of the electronic component to irradiate the detection area. Wherein, the low-angle light source module is turned off to capture the image of the bump area, and the high-angle light source module is configured to generate the first type of irradiating light with a first brightness. Wherein, for capturing the image of the non-bump area, the low-angle light source module is turned off, and the high-angle light source module is configured to generate the first type of irradiating light with a second brightness. Wherein, the first brightness may be smaller than the second brightness, and the second brightness is to make the area not coated with flux in the non-bump area located at the edge of the inspection area appear in the image obtained by the first imaging module. The displayed pixel gray scale value is between 150-254, and the second brightness makes the pixel gray scale value displayed by the bump area greater than 254 in the image obtained by the first imaging module.

According to an embodiment of the present invention, the second type of irradiating light generated by the low-angle light source module can be used to visualize foreign objects on the surface of the at least one electronic component in the detection area, while the high-angle light source module Groups are configured to be closed.

According to an embodiment of the present invention, each of the high-angle light source module and the low-angle light source module can be arranged in a manner surrounding the detection area. The high-angle light source module is higher than the low-angle light source module. Wherein, the detection area is configured to only cover the two electronic components arranged in a group on a conveying lane.

According to an embodiment of the present invention, each of the high-angle light source module and the low-angle light source module can be configured to have two parallel light source devices on two opposite sides of the detection area. The high-angle light source module is higher than the low-angle light source module. Among them, the detection zone is assigned Arranging to only cover at least three or more of the at least three electronic components arranged in a group on a conveying path, the parallel direction of the at least three electronic components is parallel to each of the light source devices, and the conveying direction of the conveying path is perpendicular to each The light source device.

According to an embodiment of the present invention, the low-angle light source module and the high-angle light source module each include a plurality of light-emitting units, and the half-power angle of the light-emitting units can be less than 30 degrees.

In order to achieve the above and other purposes, the present invention further proposes a detection device for flux distribution, which is used to implement the detection method using the second bump area imaging method as described above. The detection device is arranged above a platform defined for placing at least one electronic component, and the detection device is used to visualize the solder flux on the surface of the at least one electronic component in a detection area and obtain corresponding image data , for subsequent determination of the flux distribution area. The surface of the at least one electronic component defines a bump area and a non-bump area, the detection area is defined on the carrying platform, and the detection equipment includes: a first imaging module, a second imaging module, A high-angle light source module and a low-angle light source module. The first imaging module is disposed above the detection area, and the first imaging module is configured to acquire images at an imaging angle of 80-100 degrees with the carrier plate of the electronic component. The second imaging module is arranged above the first outer area of the detection area, and the second imaging module is configured to obtain an image at an included angle of 60 to 70 degrees with the carrier plate of the electronic component. image. The high-angle light source module is configured to provide a first type of irradiating light with an incident angle of 45-75 degrees to the carrier board of the electronic component to irradiate the electronic component. The low-angle light source module is configured to provide a second type of irradiating light with an incident angle of 80-90 degrees to the carrier board of the electronic component to irradiate the electronic component. Wherein, the operation of the low-angle light source module and the second image-taking module is used to obtain a second image for determining the flux distribution area of the bump area, and the high-angle light source module and the first image-taking module The operation of the image module is used to obtain a third image for determining the flux distribution area of the non-bump area.

According to an embodiment of the present invention, the low-angle light source module may include a first low-angle light source device adjacent to the first outer area, the second outer area, the third outer area, and the fourth outer area of the detection area, respectively, The second low-angle light source device, the third low-angle light source device and the fourth low-angle light source device. The second type of irradiating light is formed by the irradiating light of the first low-angle light source device, the third low-angle light source device and the fourth low-angle light source device, and the first outer area and the second outer area are respectively Located on opposite sides of the detection area, the third outer area and the fourth outer area are respectively located on opposite sides of the detection area.

The low-angle light source module and the high-angle light source module each include a plurality of light-emitting units, and the half-power angle of the light-emitting units can be less than 30 degrees.

For the bump area of the electronic components, the predetermined thickness of the coated flux is used as the distinguishing criterion, and the matching imaging method of the bump area is adopted, and the same image of the non-bump area is adopted. step, to obtain the corresponding image data, and then provide for the judgment of flux distribution in the subsequent bump area and non-bump area. The technical content disclosed above can make the obtained image have the characteristics of low interference and high contrast, and then provide the correct sampling image for the subsequent determination of whether the flux distribution area is correct, or even the determination of whether there is foreign matter attached or generated. .

100: carrying platform

200: electronic components

311: The first imaging module

312:Second imaging module

313: Reflection module

411: High angle light source module

412:Low angle light source module

412a: First low-angle light source device

412b: Second low-angle light source device

412c: The third low-angle light source device

412d: The fourth low-angle light source device

θ ₁ : the incident angle of the first type of irradiating light

θ ₂ : the incident angle of the second type of irradiating light

A: Detection area

A': area (corresponding to detection area A)

P1: first lateral zone

P2: second lateral region

P3: third lateral zone

P4: fourth lateral zone

C1: first image

C2:Second Image

C3: Third Image

C4: Fourth Image

L1: The first type of irradiation light

L2: The second type of irradiation light

F: Conveying direction of conveying lane

S100~S200: Steps

[ Fig. 1 ] is a schematic diagram of a detection method according to an embodiment of the present invention.

[ Fig. 2 ] is a schematic diagram of the detection environment configuration in the first bump area imaging mode according to the embodiment of Fig. 1 .

[ FIG. 3 ] is a schematic diagram of the detection environment configuration in the second bump area imaging mode according to the embodiment of FIG. 1 .

[ FIG. 4 ] is a schematic configuration diagram of the detection environment in the first bump area imaging mode according to another embodiment of the present invention.

[ Fig. 5 ] is a schematic configuration diagram of the detection equipment according to the first embodiment of the present invention under the imaging mode of the first bump area.

[ FIG. 6 ] is a schematic configuration diagram of the detection equipment according to the second embodiment of the present invention under the imaging method of the first bump area.

[ Fig. 7 ] is a schematic configuration diagram of the detection equipment according to the first embodiment of the present invention under the second bump area imaging mode.

In order to fully understand the purpose, characteristics and effects of the present invention, the present invention will be described in detail by means of the following specific embodiments and accompanying drawings, as follows: In this article, the term " "a" or "one" to describe a unit, component, structure, device, module, system, part or region, etc. This is done for convenience of description only and to provide a general sense of the scope of the invention. Accordingly, such description should be read to include one or at least one and the singular also includes the plural unless it is obvious that it is otherwise meant.

In this document, the described terms "comprising, including, having" or any other similar terms mean that they are not limited to the elements listed herein, but may include elements not explicitly listed but described, Other elements normally inherent in a component, structure, device, module, system, site or area.

In this article, the words "first" or "second" and similar ordinal numbers described are used to distinguish or refer to the same or similar elements, structures, parts or regions, and do not necessarily imply The spatial order of such elements, structures, parts or regions. It should be understood that in some cases or configurations, ordinal terms may be used interchangeably without affecting the practice of the present invention.

An electronic component with a semiconductor package structure may include a chip and a substrate carrying the chip, such as a flip chip (Flip Chip), or other semiconductor structures that use bumps to lead out the electrodes of the semiconductor chip. The surface of the electronic component can be divided into a bump area where bumps are distributed and a non-bump area where no bumps are distributed, which is determined by the design of the semiconductor package structure. According to the design of the semiconductor package structure, the coating device is used to coat the flux on the bump area (the bump area may be concentrated in one block or consist of multiple small blocks). Therefore, it is obviously impossible to accurately and comprehensively inspect these electronic components one by one by means of manual random inspection and visual inspection. As a result, various problems such as poor electrical connection and appearance defects may occur when the flux is not applied correctly.

Since the flux itself has light-transmitting properties and the surface curvature is prone to inconsistencies. In addition, in the bump area, the bumps under the flux are also made of metal or contain metal materials, and the flat surface of the carrier under the flux, etc., make the lighting and imaging conditions of general optical inspection In this situation, it is difficult to correctly distinguish whether the reflected light is from the bumps, the reflected light from the carrier board or the reflected light from the flux, which makes it difficult to determine the distribution of the subsequent flux.

In addition, according to the embodiment of the present invention, the coating thickness of the flux can be used as the configuration basis of the detection method. The electronic component to be tested has a flux coating thickness of a predetermined specification (not referring to the actual thickness value). The predetermined thickness of the flux mentioned in the embodiments of the present invention refers to the flux that should be achieved under the predetermined coating conditions. In addition to the predetermined thickness of the flux, it also includes but is not limited to the actual flux thickness on the electronic components. Matching the corresponding detection method with the flux coating thickness of a predetermined specification can effectively display the flux for the distribution of the flux in the bump area and improve the degree of recognition. Furthermore, for the distribution of flux in the non-bump area, another corresponding detection step is adopted, also for the purpose of Make the flux can be effectively displayed to improve the recognition. Therefore, according to the embodiment of the present invention, it is easier and more accurate to determine the distribution of the subsequent soldering flux, which has remarkable effects.

Please refer to FIG. 1 , which is a schematic diagram of a detection method according to an embodiment of the present invention. The surface of the electronic component is captured by matching lighting and imaging conditions to solve the problem that the flux distribution is difficult to be visualized. As shown in Fig. 1, the image capturing step S100 of the bump area is performed first, and then the image capturing step S200 of the non-bump area is performed. However, this is only an example, and the order of these two steps can also be exchanged and other steps can be added between the two. step.

In step S100 of capturing the image of the bump area, the detection mode adopted is the first imaging mode of the bump area or the second imaging mode of the bump area. One of the two imaging methods of the bump area is the imaging step adopted for the bump area in the embodiment of the present invention. The predetermined thickness of the aforementioned solder flux is regarded as a thickness threshold value. If it is less than this thickness threshold value, the first bump area imaging method will be used. Otherwise, if it is greater than or equal to this thickness threshold value, the second bump area will be used. Image acquisition method. To sum up, in this embodiment, the electronic components with thicker flux thickness adopt the second bump area imaging mode, and on the contrary, the electronic components with thinner flux thickness adopt the first bump area imaging mode.

The first image can be obtained by the first bump area imaging method, and the second image can be obtained by the second bump area imaging method. Wherein, the obtained first image or the second image is used for determining the flux distribution area of the bump area. In this embodiment, in the image capturing step S100 of the bump area, the flux distribution in the bump area can be displayed. The imaging method of the first bump area adopts the first type of high-angle illumination light L1 (bright field illumination) and the detection environment of high-angle imaging to obtain the image of the flux distribution in the bump area (the first image ). The second bump area imaging method adopts the second type of low-angle illumination light L2 (dark field illumination) and the detection environment of low-angle imaging to obtain the flux distribution in the bump area. image of the situation (second image). The configuration of the detection equipment of the two will be further explained in the content described later.

In the non-bump area imaging step S200, regardless of whether the first bump area imaging mode or the second bump area imaging mode is used, the first type of high-angle illumination light L1 (bright field illumination) can be used and the detection environment of high-angle imaging to obtain an image (third image) of flux distribution in the non-bump area.

In the step S100 of capturing an image of the bump area and the step S200 of capturing an image of the non-bump area, the range of imaging is not limited to only the bump area or only the non-bump area. For example, the imaging range in the bump area imaging step S100 may include the bump area and the non-bump area, but for the analysis of the flux distribution, the image obtained in the bump area imaging step S100 The first image or the second image is suitable for judging the flux distribution in the bump area, in other words, the flux in the bump area can have a more obvious appearance in the first image or the second image, which is easy to be judged Flux application in the bump area. On the other hand, the soldering flux in the non-bump area may have a relatively obvious appearance in the third image, which is easy to determine the flux coating in the non-bump area.

Next, please refer to FIG. 1 and FIG. 2 at the same time. FIG. 2 is a schematic diagram of a detection environment configuration in the first bump area imaging mode according to the embodiment of FIG. 1 . The imaging condition of the first bump area imaging method is to use high-angle bright field illumination and high-angle imaging angle to configure the detection environment. In the first bump area imaging method of the bump area imaging step S100 , the first type of illumination light L1 with an incident angle of the illumination light ranging from 45° to 75° is incident on the electronic component 200 . Here, the light incident angle is defined relative to the normal of the surface of the electronic component 200 or the normal of the center plane of the carrier. In addition, if one side of the normal line is defined as positive and the opposite side is negative, then the first type of illumination light L1 with an incident angle of 45 to 75 degrees can include 45 to 75 degrees and -45 degrees relative to the normal. ~-75 degrees.

In the detection environment illustrated in FIG. 2 , the carrier platform 100 defines a detection area A for placing electronic components 200, and above the carrier platform 100 is configured a high-angle light source module 411 for illuminating the detection area A and a detection area A. A The first imaging module 311 for imaging. Single or multiple electronic components can be placed on the carrying platform 100 , and the testing environment can also be a testing station on the production line. The carrying platform 100 can be a continuous conveyor belt or a part of the conveyor belt.

Referring to FIG. 2 , the high-angle light source module 411 provides illumination light incident on the detection area A to illuminate the electronic component 200 . At this time, the incident angle _θ1 of the irradiating light provided by the high-angle light source module 411 to the electronic component 200 is between 40-75 degrees (for example, 40-60 degrees, 60-70 degrees, 45-70 degrees, 75 degrees) to form the first type of irradiating light L1. Wherein, the illumination light provided by the high-angle light source module 411 can define an incident angle between 45° and 75°. For the application of thinner flux thickness, it can be further defined as between 60 and 70 degrees. In the illumination light provided by the high-angle light source module 411, it can be based on the distance between the central beam or the optical axis of the light beam generated by the high-angle light source module 411 (as shown by the L1 arrow in FIG. 2 ) and the carrier board of the electronic component 200. The angle relationship between the normals of the center planes of the boards defines the incident angle θ ₁ incident on the electronic component 200 . In other embodiments, it can also be defined based on the angular relationship between all the beams in the beams generated by the high-angle light source module 411 and the normal line of the center plane of the carrier board of the electronic component 200, all the beams All meet the specification that the incident angle θ ₁ is between 45 and 75 degrees. In other implementations, it can also be defined based on the range of the half-power angle (or beam angle, Beam angle) of the light-emitting units in the high-angle light source module 411, that is, in this aspect, half All beams within the power angle must comply with the specification that the incident angle θ ₁ is between 45 and 75 degrees.

As shown in FIG. 2 , the first imaging module 311 is disposed above the detection area A, and is configured to obtain the first image C1 at an imaging angle between 80° and 100°. The imaging angle of the first imaging module 311 refers to the distance between the optical axis of the first imaging module 311 (such as the optical axis of the camera lens) and the carrier board of the electronic component 200 Angle (different from the aforementioned angle of incidence). The included angle is, for example, the included angle between the center plane of the carrier board of the electronic component 200 and the optical axis of the first imaging module 311 . For electronic components coated with thinner flux, based on the high-angle irradiation light and high-angle imaging, it can be formed to take an image of the electronic component 200 in a bright-field illumination mode, which is helpful to The appearance of flux. This makes it possible to judge whether the flux is applied or not by the better comparison presented.

In the area where flux is coated in the bump area, the thinner flux layer and the thicker flux layer have different sensitivities to the illumination angle and imaging angle. Although there is an area coated with flux in the bump area, the area between the bumps on the carrier board of the electronic component 200 will be filled with flux to make the surface flat and improve the reflectivity (the reflectivity will be low if it is not coated). , the reflected light is not easy to enter the first imaging module 311). However, in this embodiment, aiming at the coating condition of the thinner flux layer, the detection environment under the high-angle irradiation light and the high-angle imaging method can more effectively reveal the flux coating condition. The coated flux can show a higher contrast in the image, and then the area with a higher gray scale value (that is, brighter) in the bump area in the image can be directly used to determine the coated flux. Conversely, for the thicker flux layer coating conditions, the detection environment is also under the high-angle irradiation light and high-angle imaging method, based on the fact that the thicker flux tends to show uneven curvature on the surface, it is easy to cause Strong reflections will interfere with the detection, and the difference in gray scale value between areas with and without flux coating is relatively low, which is not enough to achieve an effective display effect. Setting a distinguishing point based on the thickness index of the flux will more effectively achieve the effect of the flux.

Accordingly, adopting the parameter specification of the predetermined thickness of the applied flux to match the corresponding detection environment is helpful to the accuracy of detection of the state of coating of the material such as flux. In this embodiment, the parameter specification as the predetermined thickness is regarded as a thickness threshold value, and this thickness threshold value is preferably defined as a value in 1.8-10 (μm) for this material of flux, more preferably Preferably, for example 2.1, 2.2, One of 2.3, 2.4 (μm), or one of 5.7, 5.8, 5.9, 6.0, 6.1, 6.2 (μm), or 8, 9, 10 (μm) one of the values of . When the predetermined thickness of the flux is less than the thickness threshold value, the first bump area imaging method is used to build the detection environment in the bump area imaging step S100; and when the predetermined thickness of the flux is greater than or equal to the thickness threshold value In this case, the second bump area imaging method is adopted in step S100 of capturing images of the bump areas to establish a detection environment.

Therefore, in the detection environment of the first bump area imaging method, in the first image C1 obtained, there is an area coated with flux, and the brightness in the image increases significantly, which can be compared with that without coating The lower brightness of the area where the flux is exposed to the flux produces a clear difference, which helps to improve the recognition of the flux distribution in the bump area, and then helps the analysis and judgment of the back end.

Please refer to FIG. 1 and FIG. 2 at the same time. The imaging conditions of the non-bump area imaging step S200 are also bright field illumination, and the first type of illumination light L1 provided by the high-angle light source module 411 is also used. , and use the first imaging module 311 to obtain the third image C3 at an imaging angle between 80° and 100°. In the step S200 of capturing an image of the non-bump area, the irradiating light is incident on the electronic component 200 at an incident angle of 45-75 degrees. Here, the incident angle of light can be defined relative to the normal line of the surface of the carrier board of the electronic device 200 as mentioned above.

In a further embodiment, the brightness of the first type of irradiating light L1 used in the first bump area imaging method in the bump area imaging step S100 is set to the first brightness, and the image is captured in the non-bump area The brightness of the first type of illumination light L1 employed in step S200 is set as the second brightness. Wherein, the first brightness is smaller than the second brightness.

For a thinner flux coating layer, to further enhance the grayscale contrast in the image, detailed settings can be made for the brightness of the lighting. The first type of irradiating light L1 with the second brightness must meet the following general conditions. In the non-bump area in the third image C3, the area not coated with flux The gray scale value of the displayed pixel must be close to 255, for example, it must be between 245~254. In addition, the gray scale value of the pixel displayed in the bump area in the third image C3 needs to be greater than 254. At the same time, with the above-mentioned condition that the first brightness is smaller than the second brightness, the distribution of the flux can be more clearly displayed in the detection environment of the electronic component 200 whose predetermined coating thickness of the flux is less than the thickness threshold. , to improve the recognition of flux distribution.

The aforementioned general situation means that the circuit board exposed in the non-bump area is a circuit board without patterned lines on the surface. However, when the circuit board exposed in the non-bump area is a circuit board with patterned lines on the surface, in the non-bump area in the third image C3, the pixel gray in the area where no flux is applied The order value needs to be close to 150 or more, for example, it can be between 150-180, 170-200, 190-220, 210-240, etc., preferably between 170-180. The grayscale value of the pixel displayed in the bump area in the third image C3 must also be greater than 254.

Next, please refer to FIG. 3 , which is a schematic diagram of a detection environment configuration in the second bump area imaging mode according to the embodiment of FIG. 1 . The imaging condition of the second bump area imaging mode is to adopt the dark field illumination mode. In step S100 , the second type of irradiating light L2 with an incident angle of the irradiating light ranging from 80° to 90° is incident on the electronic component 200 . Here, the light incident angle is defined relative to the normal to the surface of the electronic component 200 or the normal to the center plane of the carrier. In addition, if one side of the normal line is defined as positive and the opposite side is negative, then the second type of illumination light L2 with a light incident angle between 80 and 90 degrees can include 80 to 90 degrees and -80 degrees relative to the normal. ~-90 degrees.

Please refer to FIG. 3 , the low-angle light source module 412 provides irradiating light to brighten the surface of the electronic component 200, and the incident angle θ ₂ of the irradiating light provided by the low-angle light source module 412 on the carrier plate of the electronic component 200 is Between 80-90 degrees, used to form the second type of illumination light L2. Among them, the better one is between 85 and 90 degrees, which is close to the so-called 0-degree incident light. In the illumination light provided by the low-angle light source module 412 , the incident angle can be defined based on the center beam of the light beam generated by the low-angle light source module 412 and the center plane of the carrier board of the electronic component 200 . In other implementations, it can also be defined based on the center plane of all beams in the beams generated by the low-angle light source module 412 and the carrier board of the electronic component 200, and all beams must comply with the incident angle between 80° Specification between ~90 degrees. In other embodiments, it can also be defined based on the range of the half-power angle (or beam angle, Beam angle) of the light-emitting units in the low-angle light source module 412, that is, in this aspect, half All beams within the power angle must comply with the specification that the incident angle is between 80 and 90 degrees.

As shown in FIG. 3 , under the second bump area imaging mode in the bump area imaging step S100, and under the irradiation of the second type of illumination light L2, the second imaging module 312 is between 60 and 70 The image is captured at an imaging angle of 100 degrees to obtain the second image C2. The imaging angle of the second imaging module 312 refers to the angle between the optical axis of the second imaging module 312 (such as the optical axis of a camera lens) and the carrier board of the electronic component 200 (different from the aforementioned incident angle) . The included angle is, for example, the included angle between the center plane of the carrier board of the electronic component 200 and the optical axis of the second imaging module 312 . For electronic components coated with thicker flux, based on the low-angle irradiation light and low-angle imaging angle, it can be used to capture images of electronic components in the form of dark field illumination, which is helpful in the bump area. The appearance of flux.

In the detection environment of the second type of illumination light L2 and oblique imaging at a low angle, there is an area coated with flux in the bump area, because the transparent flux has different properties from the bump and the surface of the carrier The reflectivity and the second type of illumination light L2 have a longer optical path in the transparent soldering flux, so the grayscale brightness can appear darker on the image. On the other hand, in the bump area, the area not coated with flux can be displayed on the image due to the reflection of the metal (bump position) and even the reflection of the carrier surface (flatter). The case where the gray scale brightness is brighter. Therefore, the brightness of the image in the area coated with flux is significantly reduced, which can be compared with the higher brightness of the area not coated with flux. It is helpful to improve the recognition of flux distribution, which is beneficial to the analysis and judgment of the back end.

Further, the second type of illumination light L2 may not include the illumination light generated on the opposite side of the second imaging module 312 . That is, as shown in FIG. 3 , the second imaging module 312 located above one side of the detection area A is the imaging side, and the imaging side does not provide illumination to the opposite side of the detection area A. For light, the opposite side of the low-angle light source module 412 shown in FIG. 3 does not provide illumination light (the light source module may not be provided or the light source module may be provided but not lit). This can also help to identify the flux distribution.

Wherein, the second image C2 may contain the image data of the non-bump area, however, the back-end analysis and determination can be performed on the image data of the bump area in the second image C2, for example, based on the design information of the semiconductor package structure And in the second image C2, the image data in the bump area to be analyzed is defined.

Please refer to FIG. 1 and FIG. 3 at the same time. The imaging condition of the non-bump area imaging step S200 is to adopt the bright field illumination method, which is also the same as the above, using the first type of illumination light L1 provided by the high-angle light source module 411. , and use the first imaging module 311 to obtain the third image C3 at an imaging angle between 80° and 100°. In step S200 , the irradiating light is incident on the electronic component 200 at a light incident angle ranging from 45° to 75°. Here, the incident angle of light can be defined relative to the normal line of the surface of the carrier board of the electronic device 200 as mentioned above.

In step S200 , under the irradiation of the first type of light L1 , the first imaging module 311 captures an image at an imaging angle ranging from 80° to 100° to obtain a third image C3 . Wherein, the third image C3 is preferably captured at an imaging angle between 85° and 95° (forward shooting). The imaging angle of the first imaging module 311 refers to the distance between the optical axis of the first imaging module 311 (such as the optical axis of the camera lens) and the carrier board of the electronic component 200 angle. The included angle is, for example, the included angle between the center plane of the carrier board of the electronic component 200 and the optical axis of the first imaging module 311 . For the non-bump area without bumps, under the high-angle illumination light and high-angle imaging, it can form a bright field illumination method to take images of electronic components, which is helpful for the non-bump area The appearance of flux.

Generally, the flux coating area is set to be coated within a certain distance between the bump area and the periphery of the bump area. In the non-bump area, due to the interference of no bumps and the difference in reflectivity between the surface of the substrate and the surface of the flux, under the detection environment of the first type of illumination light L1 and high-angle imaging, a relatively flat substrate Areas that have been coated with flux may also exhibit darker grayscale brightness. On the contrary, in the non-bump area and the area not coated with flux, the gray scale brightness can be brighter in the image. Therefore, the brightness of the image in the area coated with flux is significantly reduced, which can be clearly distinguished from the higher brightness of the area not coated with flux, which helps to improve the identification of flux distribution degree, and the third image C3 is helpful for the analysis and determination of the flux distribution area for the non-bump area at the rear end.

In the examples shown in Figure 1 and Figure 3, for the thicker flux coating layer, the combination of two special conditions further increases the gray scale difference, so that the flux distribution on the electronic components can It is effectively identified and overcomes the shortcomings of the high reflectivity of the substrate and bumps that make it difficult to correctly identify the flux. Further, based on the increase in the degree of difference, the detection of the flux can also be automatically performed. .

In addition to the aforementioned step S100 and step S200, it may also include a whole-area imaging step (not shown in FIG. 1 ). The sequence of these three steps is not limited, and may be individually executed in any sequence. In the whole-area imaging step, under the irradiation of the second type of illumination light L2, the first imaging module 311 performs imaging at an imaging angle between 80° and 100° to obtain a fourth image C4. The configuration of the first imaging module 311 is the same as that described above The configuration will not be repeated here. The fourth image C4 is used to determine whether there is foreign matter in the bump area and the non-bump area of the electronic device 200 .

Please refer to FIG. 4 , which is a schematic configuration diagram of a detection environment in the first bump area imaging mode according to another embodiment of the present invention. Figure 4 takes the detection environment in the first bump area imaging mode as an example, and the detection environment in the second bump area imaging mode (already equipped with the first imaging module 311 and the low-angle light source module 412) Also apply at the same time.

In the detection environment of high-angle imaging (by the first image-taking module 311) and low-angle irradiation light (by the low-angle light source module 412, while turning off the high-angle light source module 411), most of the light from electronic components The light reflected by the surface will be reflected out of the high-angle imaging system. However, if foreign matter is attached to the surface of the electronic component or other foreign matter is generated, a protrusion will be formed on the surface of the electronic component, and then the low-angle irradiation light will be reflected back to the high-angle imaging system at the protrusion, making the protrusion The grayscale brightness of the starting point can be higher than that of the bumps, flux and carrier board, so that it can detect whether there are foreign objects (such as dust spots or other foreign objects).

Further, the low-angle light source module 412 in the example shown in FIG. 4 can be used to generate ring light irradiating towards the detection area A, that is, the low-angle light source module 412 is arranged above and around the detection area A. As shown in FIG. 4 , low-angle illumination light (second type illumination light L2 ) is provided on two opposite sides of the detection area A. As shown in FIG. In addition, due to the limitation of the viewing angle in FIG. 4, the illumination light on the other two opposite sides of the detection area A is not shown in FIG. 4 (refer to FIG. 7). The second type of A illuminates first L2 (the configuration here is ring light).

Next, please refer to FIG. 5 , which is a schematic configuration diagram of a detection device according to a first embodiment of the present invention under the imaging method of the first bump area. The detection equipment includes: a first imaging module 311 , a high-angle light source module 411 , and a low-angle light source module 412 .

The first imaging module 311 is disposed above the detection area A, and the first imaging module 311 is configured to obtain an image at an imaging angle of 80-100 degrees with the carrier board of the electronic component. When the first imaging module 311 is operated in the first bump area imaging mode in the bump area imaging step S100, it is used to obtain the aforementioned first image C1 (refer to FIG. 2 ). At this time, the low angle The light source module 412 is turned off, and only the high-angle light source module 411 is turned on to generate the first type of illumination light L1 with the first brightness. The first imaging module 311 is operated in the non-bump area imaging step S200 to obtain the aforementioned third image C3 (refer to FIG. 2 ). At this time, the low-angle light source module 412 is also turned off, and only Turn on the high-angle light source module 411 and generate the first type of illumination light L1 with the second brightness.

The high-angle light source module 411 is configured to provide the first type of illumination light L1 with an incident angle of 45-75 degrees to the carrier of the electronic component 200 to illuminate the detection area A. The low-angle light source module 412 is configured to provide the second type of illumination light L2 with an incident angle of 80-90 degrees to the carrier of the electronic component 200 to illuminate the detection area A.

When the first type of illumination light L1 is operated in the first bump area imaging mode in the bump area imaging step S100 , the first brightness is used. When the first type of illumination light L1 is operated in the non-bump region imaging step S200, the second brightness is used. As mentioned before, the first brightness is smaller than the second brightness. The second brightness can be defined as the gray scale of the pixels in the third image C3 obtained by the first imaging module 311 in the non-bump area on the edge of the detection area A where no flux is applied. The value is between 150~254. And, the second brightness can make the pixel grayscale value of the raised dot area in the third image C3 obtained by the first imaging module 311 greater than 254. Wherein, when the circuit board exposed in the non-bump area is a circuit board without patterned lines on the surface, the second brightness must make the gray scale value of the pixel in the area not coated with flux close to 255, for example For example, it needs to be between 245~254; on the other hand, when the circuit board exposed in the non-bump area is a circuit board with patterned lines on the surface, the second brightness must make the area not coated with flux appear out The grayscale value of the pixel must be close to 150 or more, for example, it can be between 150-180, 170-200, 190-220, 210-240, etc., preferably between 170-180.

As shown in FIG. 5 , for ease of illustration, on the carrying platform 100 as the conveying path, an area A' is used to mark the range of image capture in the detection area A below the first image capturing module 311. In the example shown in FIG. 5 , there are two electronic components 200 (to be detected together) arranged side by side in a group on the conveying path, and they are arranged backwards on the conveying path in sequence. The label F is the conveying direction of the conveying path.

In addition, under the configuration of the compact light source module, the detection area A can only cover part of the electronic components 200 (the detection method disclosed in this embodiment can still complete the detection of the flux distribution). Among them, the high-angle light source module 411 and the low-angle light source module 412 are respectively arranged in a manner surrounding the detection area A, respectively forming a surrounding high-angle light source module and a surrounding low-angle light source module, and respectively Detection zone A provides annular illumination light. The high-angle light source module 411 is configured higher than the low-angle light source module 412 .

Next, please refer to FIG. 6 , which is a schematic configuration diagram of a detection device according to a second embodiment of the present invention under the imaging mode of the first bump area. The detection device also includes: a first imaging module 311 , a high-angle light source module 411 , and a low-angle light source module 412 . What is different from the example in FIG. 5 is that there are at least three or more electronic components 200 arranged side by side in a group on the conveying path (the example in FIG. 6 is that 5 are detected together), and they are arranged backwards on the conveying path in sequence. The symbol F is also the conveying direction of the conveying path.

In addition, in FIG. 6 , each of the high-angle light source module 411 and the low-angle light source module 412 is configured to have two parallel light source devices on two opposite sides of the detection area A. The high-angle light source module 411 is higher than the low-angle light source module 412 . The conveying direction F of the conveying path can be perpendicular to each of the light source devices (411, 412).

Further, in the first bump area imaging method, a compact light source module configuration can be used (the captured image only covers a part of the surface of an electronic component), and in addition, the bump area image capturing step S100, non- An additional imaging step is performed before the bump area imaging step S200 and the entire area imaging step. The additional imaging step may use the first type of illumination light or the second type of illumination light to illuminate the detection zone A. And, take a fifth image (not shown) at an imaging angle of 80 to 100 degrees with the carrier plate of the electronic component 200, and the fifth image is used for detecting whether the area A covers the set electronic component 200 Determination of bump area and non-bump area, that is, positioning before detection. Wherein, the detection area A can be set to cover only a part of the surface of the electronic component (as shown in FIGS. 5 and 6 ).

Further, in the example of FIG. 6 , the wavelength of the illumination light provided by the high-angle light source module 411 and the low-angle light source module 412 can be configured to be complementary to the color of the substrate of the electronic component 200, which can help Further highlighting of flux distribution. This is because when the wavelength of the irradiating light is configured to be complementary to the color of the substrate, the contrast of the reflected light of the substrate can be further improved, which is helpful for the visualization of flux distribution. For example, when the color of the substrate is green, the high-angle light source module 411 and the low-angle light source module 412 can use a light-emitting unit that can provide a red light band, or through the high-angle light source module 411 and the low-angle light source module The switching of the output optical band of the module 412 is realized.

Next, please refer to FIG. 7 , which is a schematic configuration diagram of the detection equipment according to the first embodiment of the present invention under the second bump area imaging mode. The inspection equipment can be erected on the production line, and then can inspect the electronic components passing through the lower inspection area A one by one. In addition, the first imaging module 311 illustrated in FIG. 7 includes two sets of cameras to cover the area of the electronic components passing through the production line (corresponding to the detection area A), which is only an example and not a limitation.

The detection device illustrated in FIG. 7 includes a first imaging module 311 , a second imaging module 312 , a low-angle light source module (including 412 a - 412 d ), a high-angle light source module 411 and a reflection module 313 . The reflective module 313 can be used to guide the light (such as reflected light) from the surface of the electronic component in the detection area A to enter the second imaging module 312. This configuration can further reduce the installation space required by the detection equipment. In other implementations, the reflection module 313 may not be provided, and the second imaging module 312 may be configured as shown in FIG. 3 . The reflection module 313 is, for example, a combination of a mirror and a fixing seat.

The low-angle light source module 412 is configured adjacent to the detection area A, the first low-angle light source device 412a above the first outer area P1 of the detection area A, and the second low-angle light source device 412a above the second outer area P2 of the detection area A. The low-angle light source device 412b is the third low-angle light source device 412c above the third outer area P3 of the detection area A, and the fourth low-angle light source device 412d is above the fourth outer area P4 of the detection area A. Further, when the four low-angle light source devices (412a-412d) are all turned on, a ring-shaped light source group surrounding the detection area A can be formed. The respective outer sides of the aforementioned detection area A refer to the associated areas adjacent to the detection area A on the extension plane of the detection area A. In FIG. 7 , the adjacent areas ( P1 , P2 , P3 , P4 ) on the four sides of the rectangular detection area A are used as examples for marking.

The operation of the low-angle light source module (including 412 a - 412 d ) and the second image capturing module 312 is used to obtain the second image C2. The second image C2 can be used to determine the flux distribution area of the bump area of the electronic component. The operation of the high-angle light source module 411 and the first image capturing module 311 is used to obtain the third image C3. The third image C3 can be used to determine the flux distribution area of the non-bump area of the electronic component. The operation of the low-angle light source module (including 412a~412d) and the first imaging module 311 is used to obtain the fourth image C4, which can be used to determine the bump area and non-bump area of the electronic component Whether there are foreign objects.

The illuminating light used to form the aforementioned second image C2 is the second type of illuminating light L2 (refer to FIG. It is formed by the irradiation light of the three low-angle light source devices 412c and the fourth low-angle light source device 412d. Apparently, the second type of illumination light L2 is non-circular light illuminated at a low angle. Non-ring light refers to the light-emitting unit on one side of the low-angle light source module (including 412a~412d) adjacent to the detection area A, which is controlled to not provide illumination to the detection area A. The image-capturing side of the second image C2 (that is, at 412b).

The illumination light used to form the aforementioned third image C3 is the first type illumination light L1 (refer to FIG. 3 together), and the first type illumination light L1 can be formed by the high-angle light source module 411 . As shown in FIG. 7 , the high-angle light source module 411 may also be composed of four sets of light source devices disposed around and above the detection area A. As shown in FIG. When the four groups of light source devices of the high-angle light source module 411 are all turned on, a ring light illuminating the detection area A can also be formed.

In the example of FIG. 7, the illumination light used to form the aforementioned fourth image C4 is the second type illumination light L2 (refer to FIG. It is formed by the irradiation light of the second low-angle light source device 412b, the third low-angle light source device 412c and the fourth low-angle light source device 412d. Apparently, the second type of illumination light L2 used to form the aforementioned fourth image C4 is a low-angle illumination ring light.

Each of the above-mentioned light source devices may include a single or multiple light-emitting units (such as light-emitting diodes), wherein each light-emitting unit may use a light-emitting unit with a half-power angle of less than 30 degrees, which can further improve the concentration of light and the degree of angle matching. accuracy.

To sum up, by applying specific detection conditions (including lighting conditions and imaging conditions) to electronic components, the correct visualization of flux distribution in bump areas and non-bump areas can be achieved. Among them, the first bump area imaging mode with low-angle irradiation light or the second bump area imaging mode with high-angle irradiation light are selected according to the predetermined thickness of the coated flux, so that the image data has low noise contrast with high The characteristics of the flux, and then the subsequent determination of whether the flux distribution area is correct, and even the determination of whether there is foreign matter attached and generated, provides the correct sampling image.

The present invention has been disclosed above with preferred embodiments, but those skilled in the art should understand that the embodiments are only used to describe the present invention, and should not be construed as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to the embodiment should be included in the scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the patent application.

S100~S200: Steps

Claims (17)

A detection method for the distribution of solder flux, which is used to display the flux on the surface of at least one electronic component in a detection area, the surface of the at least one electronic component defines a bump area and a non-bump area, the detection method Including: a step of capturing an image of the bump area, which is to take the image of the bump area by using one of a first image capture method of the bump area and a second image capture method of the bump area, wherein, when When the predetermined thickness of the coated solder flux is less than a thickness threshold value, the first bump area imaging method is carried out, and the first bump area imaging method adopts the incident angle of the carrier board of the electronic component as A first type of irradiating light of 45 to 75 degrees irradiates the detection area, and obtains a first image at an imaging angle of 80 to 100 degrees with the carrier plate of the electronic component, wherein, when the coated auxiliary When the predetermined thickness of the solder is greater than or equal to the thickness threshold value, the second bump area imaging method is carried out. The second bump area imaging method adopts an incident angle of 80~90° to the carrier board of the electronic component. A second type of irradiating light of 100 degrees irradiates the detection area, and obtains a second image at an imaging angle of 60 to 70 degrees with the carrier plate of the electronic component; and a non-bump area imaging step, which is irradiating the detection area with the first type of irradiating light, and obtaining a third image at an imaging angle of 80 to 100 degrees with the carrier plate of the electronic component, wherein the obtained first image or the first The second image is used for the determination of the flux distribution area of the bump area, and the obtained third image is used for the determination of the flux distribution area of the non-bump area. The detection method as described in Claim 1, wherein the thickness threshold is a value in the range of 1.8-10 (μm). The detection method as described in claim 1, wherein the brightness of the first type of illumination light used in the imaging method of the first bump area is the first brightness, which is used in the imaging step of the non-bump area The brightness of the first type of irradiating light is a second brightness, and the first brightness is smaller than the second brightness. The detection method as described in claim 3, wherein the third image includes images of the bump area and the non-bump area, and in the non-bump area located at the edge of the detection area, the second brightness is set to In order to make the gray scale value of the pixel displayed in the image in the area coated with flux be between 150~254, wherein the second brightness is set to make the bump area appear in the image The grayscale value of the pixel is greater than 254. The detection method as described in claim 1, wherein the second type of illumination light in the second bump area imaging method is provided by a low-angle light source module surrounding the periphery of the detection area, the first The second type of illumination light system is a non-ring light, which means that a light-emitting unit on one side of the low-angle light source module adjacent to the detection area does not provide illumination to the detection area, and the side of the detection area is opposite on the image-capturing side of the second image. The detection method as described in any one of Claims 1 to 5, which further includes a whole-area imaging step, which is to irradiate the detection area with the second type of illumination light, and use the included angle with the carrier plate of the electronic component Obtain a fourth image for an imaging angle of 80-100 degrees, which The fourth image is based on the determination of whether foreign matter exists in the bump area and the non-bump area of the electronic component. The detection method as described in claim 6, wherein the first type of illumination light in the imaging mode of the first bump area and the imaging step of the non-bump area is passed through a surrounding type around the detection area. Provided by a high-angle light source module, the second type of illumination light in the whole-area imaging step is provided by a surrounding low-angle light source module surrounding the detection area. The surrounding high-angle light source module The group system is higher than the surrounding low-angle light source module, wherein the detection area only covers the two electronic components arranged in a group on a conveying path. The detection method as described in claim 6, wherein the first type of illumination light in the imaging mode of the first bump area is generated by a parallel high-angle light source module above two opposite sides of the detection area Provided that the second type of illumination light in the whole-area imaging step is provided by a parallel low-angle light source module above two opposite sides of the detection area, the parallel high-angle light source module is high In the parallel low-angle light source module, the detection area covers at least three or more electronic components arranged in a group on a conveying path. The detection method as described in claim 6, wherein in the step of capturing images of the bump areas, under the condition that the first imaging method of the bump areas is adopted, the imaging step of the bump areas and the imaging of the non-bump areas are carried out. Before the imaging step and the whole-area imaging step, an additional imaging step is included. The additional imaging step is to irradiate the detection area with the first type of illumination light or the second type of illumination light, and to communicate with the electronic component The included angle of the carrier plate is 80~100 degrees to obtain a fifth image, and the fifth image is used for the detection determining whether the area covers the bump area and the non-bump area of the at least one electronic component, wherein the detection area only covers part of the surface of the electronic component. A detection device for flux distribution, which is used to implement the detection method using the first bump area imaging method as described in any one of claim items 1-4 and 6-9, the detection device is configured in the defined On the top of a carrying platform for at least one electronic component to be placed, the detection device is used to make the flux on the surface of the at least one electronic component in a detection area be visualized and obtain corresponding image data for subsequent fluxing For the determination of the distribution area, the surface of the at least one electronic component defines a bump area and a non-bump area, the detection area is defined on the carrier platform, and the detection equipment includes: a first imaging module, which is configured on Above the detection area, the first imaging module is configured to obtain an image at an imaging angle of 80 to 100 degrees with the carrier board of the electronic component; a high-angle light source module is configured to provide a first type of irradiating light having an incident angle of 45 to 75 degrees to the carrier of the electronic component to illuminate the detection area; and a low-angle light source module configured to provide light to the carrier of the electronic component A second type of irradiating light with an incident angle of 80-90 degrees is used to irradiate the detection area, wherein, to capture an image of the bump area, the low-angle light source module is turned off, and the high-angle light source module is configured as generating the first type of illumination light with a first brightness, Wherein, the low-angle light source module is turned off for capturing images of the non-bump area, and the high-angle light source module is configured to generate the first type of illumination light with a second brightness, wherein the first brightness is Less than the second brightness, the second brightness is the grayscale value of the pixel in the image obtained by the first imaging module in the non-bump area located at the edge of the detection area. Between 150-254, and the second brightness makes the pixel gray scale value of the raised dot area greater than 254 in the image obtained by the first imaging module. The inspection device as described in claim 10, wherein the second type of illumination light generated by the low-angle light source module is used to reveal foreign objects on the surface of the at least one electronic component in the inspection area, and at the same time, the high Angular light mods are configured to be off. The detection device as described in claim 10, wherein the high-angle light source module and the low-angle light source module are arranged around the detection area, and the high-angle light source module is higher than the low-angle light source In the module, the detection area is configured to only cover the two electronic components arranged in a group on a conveying lane. The detection device as described in claim 10, wherein the high-angle light source module and the low-angle light source module are arranged in such a way that there are two light source devices parallel to each other on two opposite sides of the detection area, the The high-angle light source module is higher than the low-angle light source module, wherein the detection area is configured to only cover the at least three electronic components arranged in a group on a conveying lane, and the at least three electronic components The juxtaposition direction is parallel to each of the light source devices, and the conveying direction of the transport path is perpendicular to each of the light source devices. The detection device according to claim 10, wherein the low-angle light source module and the high-angle light source module each include a plurality of light-emitting units, and the half-power angle of each light-emitting unit is less than 30 degrees. A detection device for flux distribution, which is used to implement the detection method using the second bump area imaging method as described in claim 1 or 5, the detection device is configured in a defined area for at least one electronic component to be placed Above a carrying platform, the detection device is used to visualize the flux on the surface of the at least one electronic component in a detection area and obtain corresponding image data for subsequent determination of the flux distribution area. The at least one A bump area and a non-bump area are defined on the surface of the electronic component, and the detection area is defined on the carrying platform. The detection equipment includes: a first imaging module arranged above the detection area, and the second An imaging module is configured to obtain an image at an imaging angle of 80 to 100 degrees with the carrier board of the electronic component; a second imaging module is arranged in the first outer area of the detection area Above, the second imaging module is configured to obtain an image at an imaging angle of 60 to 70 degrees with the carrier board of the electronic component; a high-angle light source module is configured to provide the electronic component A first type of irradiating light with an incident angle of 45 to 75 degrees on the carrier plate irradiates the electronic component; and a low-angle light source module configured to provide an incident angle of 80 to 90 degrees to the carrier plate of the electronic component A second type of irradiating light at a high degree irradiates the electronic component, wherein the operation of the low-angle light source module and the second imaging module is used to obtain a second image for determining the flux distribution area of the bump area imagery, the high angle The operation of the light source module and the first imaging module is used to obtain a third image for determining the flux distribution area of the non-bump area. The detection device as claimed in claim 15, wherein the low-angle light source module includes a first low-angle light source of the first outer area, the second outer area, the third outer area, and the fourth outer area adjacent to the detection area, respectively. A light source device, a second low-angle light source device, a third low-angle light source device, and a fourth low-angle light source device. Formed by the irradiation light of four low-angle light source devices, the first outer area and the second outer area are respectively located on the opposite sides of the detection area, and the third outer area and the fourth outer area are respectively located on the sides of the detection area opposite side. The detection device according to claim 15, wherein the low-angle light source module and the high-angle light source module each include a plurality of light-emitting units, and the half-power angle of each light-emitting unit is less than 30 degrees.

Images