TWI780066B - Adhesive composition and its utilization - Google Patents

Abstract

[Problems] The present invention realizes an adhesive composition having high heat resistance, high chemical resistance, and high cleanability. [Solution] The adhesive composition is a laminate obtained by laminating the substrate, the adhesive layer, and the support in the order of the substrate, the adhesive composition used to form the above-mentioned adhesive layer, and the glass transition temperature of the above-mentioned adhesive layer 160°C or higher, the resin component in the adhesive layer is a cycloolefin polymer with a glass transition temperature of 160°C or higher.

Description

Adhesive composition and its utilization

[0001] The present invention relates to adhesive compositions and their utilization.

[0002] As a semiconductor package (semiconductor device) including a semiconductor element (electronic component), WLP (Wafer Level Package), PLP (Panel Level Package), etc. are known. In semiconductor packages such as WLP and PLP, there are known discrete packages such as WLP (Fan-in Wafer Level Package) in which the terminals at the end of the bare chip (Bare chip) are relocated in the chip area (Chip Area). In (Fan-in) type technology, and fan-out type WLP (Fan-out Wafer Level Package) in which terminals are relocated outside the chip area. In particular, the out-type technology can be applied to out-type PLP (Fan-out Panel Level Package) in which semiconductor devices are placed on a flat plate and packaged, so it is possible to achieve integration, thinning, and miniaturization of semiconductor devices. These emission-type technologies are attracting great attention. [0003] In Patent Document 1, it is described a kind of adhesive composition containing: a polymer having a cycloolefin structure, and a (meth)acrylate monomer compatible with the polymer. [Prior Art Document] [Patent Document] [0004] [Patent Document 1] JP-A-2014-105316 (published on June 9, 2016)

[Problem to be Solved by the Invention] However, when realizing the advancement of semiconductor packaging technology accompanying the integration, thinning, and miniaturization of semiconductor devices, a method compared with that described in Patent Document 1 is still sought. The adhesive composition is a novel adhesive composition that can form an adhesive layer with high heat resistance, high chemical resistance, and high cleaning property. The present invention is proposed in view of the foregoing problems, and its purpose is to provide a novel adhesive composition capable of forming an adhesive layer with high heat resistance, high drug resistance, and high detergency and its related technologies . [Method to solve the problem] [0007] In order to solve the above-mentioned problems, the adhesive composition in one embodiment of the present invention is, In a laminate obtained by laminating the substrate, the adhesive layer, and the support in the order The adhesive composition for forming the above-mentioned adhesive layer is characterized in that the glass transition temperature of the above-mentioned adhesive layer is 160°C or higher, and the resin component in the adhesive layer is a cycloolefin polymer having a glass transition temperature of 160°C or higher. Or, the adhesive composition in one embodiment of the present invention is an adhesive composition that forms the above-mentioned adhesive layer in a laminate obtained by laminating the substrate, the adhesive layer, and the support in this order, It is characterized in that, in the above-mentioned bonding layer, the resin component is a cycloolefin polymer with a glass transition temperature of 100°C or higher, and a multifunctional curable monomer, and the multifunctional curable monomer is polymerized to make The glass transition temperature when the above-mentioned adhesive layer is hardened is 160° C. or higher. [Effect of the invention] [0009] The adhesive composition of the present invention can achieve the effect of providing a novel adhesive composition with high heat resistance, high drug resistance, and high cleaning performance and related technologies.

、2-氯9-氧硫

、2,4-二甲基9-氧硫

、1-氯-4-丙氧基9-氧硫

、硫

、2-氯硫

、2,4-二乙基硫

、2-甲基硫

、2-異丙基硫

、2-乙基蒽醌、辛甲基蒽醌、1,2-苯併蒽醌、2,3-二苯基蒽醌、偶氮二異丁腈、過氧化苯甲醯、過氧化物異丙苯、2-氫硫基苯併咪唑、2-氫硫基苯併噁唑、2-氫硫基苯併噻唑、2-(o-氯苯基)-4,5-二苯基咪唑二聚物、2-(o-氯苯基)-4,5-二(甲氧苯基)咪唑二聚物、2-(o-氟苯基)-4,5-二苯基咪唑二聚物、2-(o-甲氧苯基)-4,5-二苯基咪唑二聚物、2-(p-甲氧苯基)-4,5-二苯基咪唑二聚物、2,4,5-三芳基咪唑二聚物、二苯甲酮、2-氯二苯甲酮、4,4’-雙二甲胺基二苯甲酮(即、米勒(Michler’s )酮)、4,4’-雙二乙胺基二苯甲酮(即、乙基米勒(Michler’s )酮)、4,4’-二氯二苯甲酮、3,3-二甲基-4-甲氧基二苯甲酮、苄酯、安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香-n-丁醚、安息香異丁醚、安息香-t-丁醚、苯乙酮、2,2-二乙氧苯乙酮、p-二甲苯乙酮、p-二甲胺基丙醯苯、二氯苯乙酮、三氯苯乙酮、p-t-丁苯乙酮、p-二甲胺苯乙酮、p-t-丁基三氯苯乙酮、p-t-丁基二氯苯乙酮、α,α-二氯-4-苯氧苯乙酮、9-氧硫

、2-甲基9-氧硫

、2-異丙基9-氧硫

、二苯併環庚酮、戊基-4-二甲胺苯甲酸酯、9-苯基吖啶、1,7-雙-(9-吖啶基)庚烷、1,5-雙-(9-吖啶基)戊烷、1,3-雙-(9-吖啶基)丙烷、p-甲氧基三

、2,4,6-三(三氯甲基)-s-三

、2-甲基-4,6-雙(三氯甲基)-s-三

、2-[2-(5-甲基呋喃-2-基)乙烯基(ethenyl)]-4,6-雙(三氯甲基)-s-三

、2-[2-(呋喃-2-基)乙烯基]-4,6-雙(三氯甲基)-s-三

、2-[2-(4-二乙胺基-2-甲苯基)乙烯基]-4,6-雙(三氯甲基)-s-三

、2-[2-(3,4-二甲氧苯基)乙烯基]-4,6-雙(三氯甲基)-s-三

、2-(4-甲氧苯基)-4,6-雙(三氯甲基)-s-三

、2-(4-乙氧苯乙烯基)-4,6-雙(三氯甲基)-s-三

、2-(4-n-丁氧苯基)-4,6-雙(三氯甲基)-s-三

、2,4-雙-三氯甲基-6-(3-溴-4-甲氧基)苯基-s-三

、2,4-雙-三氯甲基-6-(2-溴-4-甲氧基)苯基-s-三

、2,4-雙-三氯甲基-6-(3-溴-4-甲氧基)苯乙烯苯基-s-三

及2,4-雙-三氯甲基-6-(2-溴-4-甲氧基)苯乙烯苯基-s-三

等。又，光聚合起始劑，亦可使用市售品之「IRGACURE OXE02」、「IRGACURE OXE01」，「IRGACURE 369」、「IRGACURE 651」及「IRGACURE 907」(商品名：任一者皆為BASF公司製)及「NCI-831」(商品名：ADEKA公司製)等。 　　[0059] 又，聚合起始劑的添加量，可配合接著劑組成物所含的硬化性單體之含量予以調整。又，一般相對於100重量份之硬化性單體時，聚合起始劑之比例以0.1重量份以上、10重量份以下為佳，以0.5重量份以上、5重量份以下為較佳。 　　[0060] 聚合起始劑，可於使用接著劑組成物之前，使用公知的方法添加於接著劑組成物。又，聚合起始劑，可先稀釋於上述(添加溶劑)欄所記載的有機溶劑中之後，再添加於接著劑組成物。又，本實施形態的接著劑組成物中，可於添加溶劑中添加熱聚合阻礙劑。 　　[0061] ＜接著薄膜＞ 　　本發明之一實施形態(實施形態3)中之接著薄膜，為於薄膜上，形成由本發明之一實施形態的接著劑組成物所形成之接著層。使用該些接著薄膜時，可於支撐體上形成適當的接著層。因此，使用本發明之一實施形態的接著劑組成物所形成的接著薄膜亦包含於本發明之範疇。 　　[0062] 於薄膜上形成接著劑層之方法，可配合所期待的接著層之膜厚或均勻性等，適當地使用公知的方法，以薄膜上的接著劑層之乾燥膜厚度為10～1,000μm之方式，塗佈接著劑組成物之方法等。 　　[0063] 使用該些接著薄膜時，與直接將接著劑組成物塗佈於支撐體上形成接著層之情形相比較時，可以形成具有良好膜厚均勻性及表面平滑性的接著層。 　　[0064] 製造接著薄膜時所使用的薄膜，只要可於薄膜上製膜的接著層由該薄膜剝離，且接著層可轉印於支撐體等之被處理面上的離型薄膜即可，而未有特別之限定。例如，膜厚15～125μm的由聚乙烯對苯二甲酸酯、聚乙烯酯、聚丙烯酯、聚碳酸酯，及聚氯乙烯等之合成樹脂薄膜所形成的可撓性薄膜等。上述薄膜，必要時，以實施容易進行轉印的離型處理為佳。 　　[0065] 又，接著薄膜，可使用保護薄膜覆蓋接著層的露出面之方式予以保護。保護薄膜，只要可由接著層剝離時，並未有限定之成份，例如，以聚乙烯對苯二甲酸酯薄膜、聚丙烯薄膜，及聚乙烯薄膜為佳。又，各保護薄膜，就容易由接著層剝離之目的，以塗覆聚矽氧，或實施燒附處理為佳。 　　[0066] 接著薄膜之使用方法，並未有特別之限定，例如，使用保護薄膜之情形，為於剝離後，重疊於露出於支撐體上的接著層，並使用加熱滾筒於薄膜上(形成接著劑層之面的內面)移動之方式，將接著層熱壓著於支撐體表面之方法等。 　　[0067] 又，由接著薄膜剝離後之保護薄膜，可使用依序捲取之輥筒等之輥筒，捲取為圓筒狀保存，而可供再利用。 　　[0068] [層合體] 　　層合體，為將本發明之一實施形態的接著劑組成物，塗佈於支撐體上，而形成具備有高耐熱性、高耐藥性，及高洗淨性的接著層。層合體，於接著層上，形成使用密封材料密封元件而得之密封體，與密封體的一側之平面部具備再配線層的密封基板。即，層合體為，於將設置於元件的端子，擴展至晶片區域而實際連接於再配線層的基於散出型技術而製造密封基板的過程，所製作的層合體。 　　[0069] [密封基板] 　　密封基板(基板)為具備元件，與實際連接元件的再配線層，與密封元件的密封體。密封基板以具備複數個元件者為佳，經由切割該些密封基板結果，即可製得複數個電子零件。 　　[0070] (再配線層) 　　再配線層，亦稱為RDL(Redistribution Layer：再配線層)，其為具有構成連接元件的配線的薄膜之配線體，可具有單層或複數層之構造。於一實施形態中，再配線層為於介電體(例如，氧化矽(SiO_x )、感光性環氧等的感光性樹脂等)上，形成有導電體(例如，鋁、銅、鈦、鎳、金及銀等的金屬及銀-錫合金等的合金)之配線者，但並不僅限定於此。 　　[0071] (元件) 　　元件(裸晶(Bare chip))為，半導體元件或其他元件，其可具有單層或複數層之構造。又，元件為半導體元件之情形，經由切割密封基板而得的電子零件，可作為半導體裝置。 　　[0072] (密封材料) 　　密封材料，例如，可使用含有環氧系樹脂及聚矽氧系樹脂的密封材料等。密封材料，並非設於每一元件上，而是將全部實際裝設於再配線層的複數元件整體密封者為佳。 　　[0073] [支撐體] 　　支撐體，只要具有於形成密封基板時，可防止密封基板的各構成要素發生破損或變形的必要強度者即可。又，支撐體，可使用具有可穿透形成於該支撐體上的分離層使其發生變質的波長之光線的材料所形成。 　　[0074] 支撐體的材料，例如，可使用玻璃、矽及丙烯酸系樹脂等，但並不僅限定於該些成份。支撐體之形狀，例如，可使用矩形，及圓形等的支撐體，但並不僅限定於該些內容。 　　[0075] [接著層] 　　接著層，為由本發明之一實施形態的接著劑組成物所形成，使密封基板固定於支撐體上之層。接著層，於其表面，可配置可經由密封材料密封的元件。又，接著層，於其表面，可直接的塗佈例如，光阻劑等，並經由曝光處理，而形成感光性絕緣膜等的圖型。又，接著層亦具有保護分離層之機能。 　　[0076] 接著層之厚度，可配合支撐體及密封基板之種類，及形成密封基板時所實施的處理等作適當之設定即可，一般以0.1μm以上、50μm以下為佳，以1μm以上、10μm以下為較佳。為1μm以上時，可使密封基板適當地固定於支撐體上。為10μm以下時，於隨後之步驟中，可容易地去除接著層。 　　[0077] [分離層] 　　分離層，為經由光線照射而產生變質之層。光線介由支撐體照射分離層，而使分離層變質結果，可使支撐體由密封基板分離。 　　[0078] 又，本說明書中，分離層「產生變質」係指，分離層受到些許外力而被破壞之狀態，或造成與分離層相接之層的接著力降低之狀態的現象之意。經吸收光線所產生的分離層變質之結果，分離層會失去照射光線前的強度或接著性。即，經由吸收光線結果，使得分離層脆化。分離層之變質係指，分離層受到所吸收的光線之能量而分解、立體配置產生變化或造成官能基解離等之意。分離層之變質，為經由吸收光線結果而產生者。 　　[0079] 因此，例如，可僅僅提起支撐板(support plate)而使分離層被破壞之變質方式，而簡單地將支撐板與基板分離。更具體而言，例如，可使用支撐體分離裝置等，將層合體中之基板及支撐板中之一者固定於載置台上，經使用具有吸附手段的吸附墊(吸附部)等，固定於另一者將其提起，而使支撐板與基板分離，或使用具備有夾器(爪部)等的分離板夾住支撐板之周邊部份端部的斜面部位後，經由施加力道而使基板與支撐板分離等皆可。又，例如，亦可使用具備有供應可剝離接著劑的剝離液之剝離手段的支撐體分離裝置，由層合體中之基板將支撐板剝離。其為經由該剝離手段將剝離液供應於層合體中之接著層的周端部中至少一部份，使層合體中之接著層膨潤，並於該接著層膨潤之際，將力量集中於分離層之方式，對基板與支撐板施加力量。因而可將基板與支撐板適當地分離。 　　[0080] 施加於層合體之力量，可配合層合體之大小等作適當之調整即可，而未有任何限定，例如，為直徑300mm左右的層合體時，經由施加0.1～5kgf左右的力量，即可將基板與支撐板適當地分離。 　　[0081] 分離層之厚度，例如，以0.05μm以上、50μm以下之範圍內為較佳，以0.3μm以上、1μm以下之範圍內為更佳。分離層之厚度集中於0.05μm以上、50μm以下之範圍時，經由短時間之光照射及低能量的光照射時，分離層即會產生所期待的變質。又，分離層之厚度，就生產性之觀點，以集中於1μm以下之範圍者為特佳。 　　[0082] 又，分離層與支撐體之間，可再形成其他之層。該情形中，其他之層可使用可穿透光線的材料所構成。如此，即不會妨礙光線射入分離層，且，可適當地追加具有優良性質之層。依構成分離層之材料的種類之不同，所可使用的光線之波長亦為不同。因此，構成其他之層的材料，並無須使用可穿透所有光線的材料，而可由可穿透可使構成分離層的材料產生變質的光線之材料中適當地選擇使用。 　　[0083] 又，分離層，可僅由具有吸收光線構造的材料所形成者亦佳，亦可於未損及本發明的本質特性之範圍，可添加不具有吸收光線構造的材料，形成分離層。又，分離層中，以與接著層為對向之側的面為平坦(不形成凹凸)者為佳，如此，可容易形成分離層，且於貼附處理中，亦可以均勻貼附。 　　[0084] (氟化碳) 　　分離層，可由氟化碳所形成。分離層，若經由氟化碳所構成時，可因吸收光線而形成變質，其結果將會失去照射光線前的強度或接著性。因此，僅需施加些許外力(例如，將支撐體提升等)，即可使分離層被破壞，而容易使支撐體與密封基板產生分離。構成分離層之氟化碳，可使用電漿CVD(化學氣相堆積)法適當地形成膜。 　　[0085] 氟化碳，依其種類之不同而會吸收特定範圍的波長。經由使用可吸收分離層所使用的氟化碳之範圍的波長之光線照射分離層時，可使氟化碳適當地產生變質。又，分離層中之光的吸收率以80%以上為佳。 　　[0086] 照射分離層之光線，可配合吸收氟化碳之波長，例如，可適當使用YAG雷射、紅寶石雷射、玻璃雷射、YVO₄ 雷射、LD雷射、纖維雷射等的固體雷射、色素雷射等的液體雷射、CO₂ 雷射、準分子雷射、Ar雷射、He-Ne雷射等的氣體雷射、半導體雷射、自由電子雷射等的雷射光，或，非雷射光等。使氟化碳產生變質之波長，此處並未有特別之限定，例如，可使用600nm以下範圍的波長。 　　[0087] (該重複單位含有具有光吸收性的構造之聚合物) 　　分離層中，可含有於該重複單位含有具有光吸收性的構造之聚合物。該聚合物，可受到光線照射而產生變質。該聚合物之變質，可經由上述構造吸收到所照射的光線而產生。分離層，經由聚合物之變質，其會喪失接受光線照射前的強度或接著性。因此，僅施加些許外力(例如，提高支撐體等)，即可使分離層被破壞，而使支撐體與密封基板容易分離。 　　[0088] 具有光吸收性的上述構造為，吸收光線時，可使重複單位之含有該構造的聚合物產生變質之化學構造。該構造，例如，由取代或無取代的苯環、縮合環或雜環所形成之含有共軛π電子系的原子團。更詳細而言，該構造可為，軸節型構造，或存在於上述聚合物側鏈的二苯甲酮構造、二苯基亞碸構造、二苯基碸構造(雙苯基碸構造)、二苯基構造或二苯胺構造等。 　　[0089] 上述構造存在於上述聚合物之側鏈時，該構造可以下式表示。 　　[0090]

(式中，R各別獨立地表示烷基、芳基、鹵素、羥基、酮基、亞碸基、碸基或N(R⁴ )(R⁵ )(其中，R⁴ 及R⁵ 各別獨立地表示氫原子或碳數1～5之烷基)，Z可不存在，或表示-CO-、-SO₂ -、-SO-或-NH-，n為0或1～5之整數)。 　　又，上述聚合物，例如，可於該主鏈中含有以下之式中：(a)～(d)之任一者所表示的重複單位、(e)所表示者，或(f)之構造。 　　[0091]

(式中，l為1以上之整數，m為0或1～2之整數，X為於(a)～(e)中之上述“化1”所示之式中之任一者，(f)中之上述“化1”所示之式中之任一者，或不存在，Y₁ 及Y₂ 各別獨立地表示-CO-或SO₂ -。l較佳為10以下之整數)。 　　上述“化1”所示之苯環、縮合環及雜環之例，可列舉如，苯基、取代苯基、苄基、取代苄基、萘、取代萘、蒽、取代蒽、蒽醌、取代蒽醌、吖啶、取代吖啶、偶氮苯、取代偶氮苯、螢光胺(fluorime)、取代螢光胺(fluorime)、螢光酮(fluorimone)、取代螢光酮(fluorimone)、咔唑、取代咔唑、N-烷基咔唑、二苯併呋喃、取代二苯併呋喃、菲、取代菲、芘及取代芘等。所例示之取代基若再具有取代基時，該取代基，例如，可由烷基、芳基、鹵素原子、烷氧基、硝基、醛、氰基、醯胺、二烷胺基、磺醯胺、醯亞胺、羧酸、羧酸酯、磺酸、磺酸酯、烷胺基及芳胺基中所選出。 　　[0092] 上述“化1”所示之取代基中，具有2個苯基的5號之取代基中，Z為-SO₂ -時之例，可列舉如，雙(2,4-二羥苯基)碸、雙(3,4-二羥苯基)碸、雙(3,5-二羥苯基)碸、雙(3,6-二羥苯基)碸、雙(4-羥苯基)碸、雙(3-羥苯基)碸、雙(2-羥苯基)碸，及雙(3,5-二甲基-4-羥苯基)碸等。 　　[0093] 上述“化1”所示之取代基中，具有2個苯基的5號之取代基中，Z為-SO-時之例，可列舉如，雙(2,3-二羥苯基)亞碸、雙(5-氯-2,3-二羥苯基)亞碸、雙(2,4-二羥苯基)亞碸、雙(2,4-二羥基-6-甲苯基)亞碸、雙(5-氯-2,4-二羥苯基)亞碸、雙(2,5-二羥苯基)亞碸、雙(3,4-二羥苯基)亞碸、雙(3,5-二羥苯基)亞碸、雙(2,3,4-三羥苯基)亞碸、雙(2,3,4-三羥基-6-甲苯基)-亞碸、雙(5-氯-2,3,4-三羥苯基)亞碸、雙(2,4,6-三羥苯基)亞碸、雙(5-氯-2,4,6-三羥苯基)亞碸等。 　　[0094] 上述“化1”所示之取代基中，具有2個苯基之5號的取代基中，Z為-C(=O)-時之例，可列舉如，2,4-二羥基二苯甲酮、2,3,4-三羥基二苯甲酮、2,2’,4,4’-四羥基二苯甲酮、2,2’,5,6’-四羥基二苯甲酮、2-羥基-4-甲氧基二苯甲酮、2-羥基-4-辛氧基二苯甲酮、2-羥基-4-十二烷氧二苯甲酮、2,2’-二羥基-4-甲氧基二苯甲酮、2,6-二羥基-4-甲氧基二苯甲酮、2,2’-二羥基-4,4’-二甲氧基二苯甲酮、4-胺基-2’-羥基二苯甲酮、4-二甲胺基-2’-羥基二苯甲酮、4-二乙胺基-2’-羥基二苯甲酮、4-二甲胺基-4’-甲氧基-2’-羥基二苯甲酮、4-二甲胺基-2’,4’-二羥基二苯甲酮，及4-二甲胺基-3’,4’-二羥基二苯甲酮等。 　　[0095] 上述構造存在於上述聚合物之側鏈時，含有上述構造的重複單位中之上述聚合物所佔之比例，為可使分離層的光線透過率為0.001%以上、10%以下之範圍內。該比例集中於該些範圍內所製得之聚合物，該分離層可充分吸收光線，而可確實且迅速地產生變質。即，容易由密封基板去除支撐體，而可縮短去除處理所需要的光線照射時間。 　　[0096] 上述構造，依其種類選擇之不同，可吸收具有所期待範圍的波長之光線。例如，上述構造可吸收的光線之波長，以100nm以上、2,000nm以下範圍內為較佳。於該範圍內，上述構造可吸收的光線之波長，可為更短波長之側，例如，100nm以上、500nm以下之範圍內。例如，上述構造，較佳為經由吸收具有約300nm以上、370nm以下範圍內的波長之紫外光時，可使含有該構造的聚合物產生變質。 　　[0097] 可被上述構造吸收之光線，例如，高壓水銀燈(波長：254nm以上、436nm以下)、KrF準分子雷射(波長：248nm)、ArF準分子雷射(波長：193nm)、F2準分子雷射(波長：157nm)、XeCl雷射(波長：308nm)、XeF雷射(波長：351nm)或固體UV雷射(波長：355nm)所發出之光，或g線(波長：436nm)、h線(波長：405nm)或i線(波長：365nm)等。 　　[0098] 上述分離層，可含有作為重複單位的含上述構造之聚合物，分離層可再含有上述聚合物以外的成份。該成份，可列舉如，填料、可塑劑，及提高支撐體剝離性的成份等。該些成份，只要不會妨礙或促進經由上述構造之光吸收，及聚合物之變質時，可由以往公知物質或材料中適當地選擇使用。 　　[0099] (無機物) 　　分離層，可由無機物所形成。分離層，因由無機物所構成，故於吸收光線後會產生變質，其結果將會喪失接受光線照射前的強度或接著性。因此，僅施加些許外力(例如，提高支撐體1等)時，即會使分離層被破壞，而使支撐體與密封基板容易分離。 　　[0100] 上述無機物，可具有經由吸收光線而變質者即可，例如，可適當地使用由金屬、金屬化合物及碳所成之群所選出之1種類以上的無機物。金屬化合物，係指含有金屬原子之化合物，例如，金屬氧化物、金屬氮化物等。該些無機物之例示，並非僅限定於下述物質，但可列舉如，由金、銀、銅、鐵、鎳、鋁、鈦、鉻、SiO₂ 、SiN、Si₃ N₄ 、TiN，及碳所成之群所選出之1種類以上的無機物。又，碳為包含碳之同位素之概念，例如，石墨、富勒烯、石墨碳、碳奈米套筒等。 　　[0101] 上述無機物，依其種類之不同而可吸收具有特定範圍的波長之光線。使用具有分離層所使用的無機物吸收範圍的波長之光線照射分離層時，可使上述無機物適當地變質。 　　[0102] 照射由無機物所形成之分離層的光線，可配合上述無機物所可吸收之波長，例如，可適當地使用YAG雷射、紅寶石雷射、玻璃雷射、YVO₄ 雷射、LD雷射、纖維雷射等的固體雷射、色素雷射等的液體雷射、CO₂ 雷射、準分子雷射、Ar雷射、He-Ne雷射等的氣體雷射、半導體雷射、自由電子雷射等的雷射光，或，非雷射光。 　　[0103] 無機物所形成之分離層，例如可使用濺鍍、化學蒸鍍(CVD)、電鍍、電漿CVD、旋轉塗佈等的公知技術，於支撐體上形成。無機物所形成之分離層的厚度並未有特別之限定，只要具有可充分吸收所使用的光線之膜厚者即可，例如，以具有0.05μm以上、10μm以下範圍內的膜厚者為較佳。又，例如，可預先於構成分離層的無機物所形成的無機膜(例如，金屬膜)之兩面或單面上塗佈接著劑，再貼附於支撐體上。 　　[0104] 又，使用作為分離層的金屬膜時，會因分離層之膜質、雷射光源之種類、雷射輸出等的條件，而引起雷射之反射或使膜產生靜電等。因此，可於分離層的上、下或其中任一面設置抗反射膜或抗靜電膜，作為該些情況之對策。 　　[0105] (具有紅外線吸收性的構造之化合物) 　　分離層，可經由具有紅外線吸收性的構造之化合物所形成者。該化合物，可經由吸收紅外線而產生變質。分離層，經由化合物之變質，其結果將會喪失受到紅外線照射前的強度或接著性。因此，僅施加些許外力(例如，提高支撐體等)時，即可使分離層被破壞，而使支撐體與密封基板容易分離。 　　[0106] 具有紅外線吸收性的構造，或含具有紅外線吸收性的構造之化合物，例如，烷烴、烯烴(乙烯基、反、順、亞乙烯、三取代、四取代、共軛、疊烯、環式)、炔烴(一取代、二取代)、單環式芳香族(苯、一取代、二取代、三取代)、醇及酚類(自由OH、分子內氫鍵結、分子間氫鍵結、飽和二級、飽和三級、不飽和二級、不飽和三級)、縮醛、縮酮、脂肪族醚、芳香族醚、乙烯醚、環氧乙環醚、過氧化醚、酮、二烷基羰酯、芳香族羰酯、1,3-二酮之烯醇(Enol)、o-羥基芳酮、二烷基醛、芳香族醛、羧酸(二聚物、羧酸陰離子)、甲酸酯、乙酸酯、共軛酯、非共軛酯、芳香族酯、內酯(β-、γ-、δ-)、脂肪族酸氯化物、芳香族酸氯化物、酸酐(共軛、非共軛、環式、非環式)、一級醯胺、二級醯胺、內醯胺、一級胺(脂肪族、芳香族)、二級胺(脂肪族、芳香族)、三級胺(脂肪族、芳香族)、一級胺鹽、二級胺鹽、三級胺鹽、銨離子、脂肪族腈、芳香族腈、碳二醯亞胺、脂肪族異腈、芳香族異腈、異氰酸酯、硫代氰酸酯、脂肪族異硫代氰酸酯、芳香族異硫代氰酸酯、脂肪族硝基化合物、芳香族硝基化合物、硝胺、亞硝胺、硝酸酯、亞硝酸酯、亞硝基鍵結(脂肪族、芳香族、單體、二聚物)、硫醇及硫酚及硫醇酸等的硫化合物、硫羰酯、亞碸、碸、氯化磺醯酯、一級磺醯胺、二級磺醯胺、硫酸酯、碳-鹵素鍵結、Si-A¹ 鍵結(A¹ 為H、C、O或鹵素)、P-A² 鍵結(A² 為H、C或O)，或Ti-O鍵結。 　　[0107] 含有上述碳-鹵素鍵結之構造，例如，-CH₂ Cl、-CH₂ Br、-CH₂ I、-CF₂ -、-CF₃ 、-CH=CF₂ 、-CF=CF₂ 、氟化芳基，及氯化芳基等。 　　[0108] 含有上述Si-A¹ 鍵結之構造，例如，SiH、SiH₂ 、SiH₃ 、Si-CH₃ 、Si-CH₂ -、Si-C₆ H₅ 、SiO-脂肪族、Si-OCH₃ 、Si-OCH₂ CH₃ 、Si-OC₆ H₅ 、Si-O-Si、Si-OH、SiF、SiF₂ ，及SiF₃ 等。含有Si-A¹ 鍵結之構造，特別是形成矽氧烷骨架及倍半矽氧烷骨架者為佳。 　　[0109] 含有上述P-A² 鍵結之構造，例如，PH、PH₂ 、P-CH₃ 、P-CH₂ -、P-C₆ H₅ 、A³ ₃ -P-O(A³ 為脂肪族或芳香族)、(A⁴ O)₃ -P-O(A⁴ 為烷基)、P-OCH₃ 、P-OCH₂ CH₃ 、P-OC₆ H₅ 、P-O-P、P-OH，及O=P-OH等。 　　[0110] 上述構造，依其種類選擇之不同，而可吸收具有所期待的範圍之波長的紅外線。具體而言，可列舉如，上述構造可吸收的紅外線之波長，例如為1μm以上、20μm以下之範圍內，又以2μm以上、15μm以下之範圍內更適合吸收。此外，上述構造為Si-O鍵結、Si-C鍵結及Ti-O鍵結時，可為9μm以上、11μm以下之範圍內。又，各構造可吸收的紅外線之波長為該業者所容易理解之內容。例如，各構造中之吸收帶，可參照非專利文獻：SILVERSTEIN・BASSLER・MORRILL著「使用有機化合物圖譜之檢定法(第5版)-MS、IR、NMR、UV之併用-」(1992年發行)第146頁～第151頁之記載。 　　[0111] 形成分離層所使用的具有紅外線吸收性的構造之化合物，只要為具有上述構造的化合物中，就塗佈之目的而可溶解於溶劑、可固化形成固體層者時，並未有特別之限定。但，就使分離層中之化合物可有效地變質、容易使支撐體與密封基板分離之觀點，以分離層中之紅外線吸收越大者，即，使用紅外線照射分離層時紅外線的透過率越低者為佳。具體而言，可列舉如，分離層中之紅外線的透過率以低於90%者為佳，紅外線的透過率以低於80%者為較佳。 　　[0112] 舉例說明時，具有矽氧烷骨架的化合物，例如，可使用由下述化學式(1)所表示之重複單位及下述化學式(2)所表示之重複單位的共聚物之樹脂，或下述化學式(1)所表示之重複單位及丙烯酸系化合物所產生之重複單位的共聚物之樹脂。 　　[0113]

(化學式(2)中，R⁶ 為氫、碳數10以下之烷基，或碳數10以下之烷氧基)。 　　其中，具有矽氧烷骨架的化合物，以上述化學式(1)所表示之重複單位及下述化學式(3)所表示之重複單位的共聚物之t-丁苯乙烯(TBST)-二甲基矽氧烷共聚物為較佳，以含有1：1之上述化學式(2)所表示之重複單位及下述化學式(3)所表示之重複單位的TBST-二甲基矽氧烷共聚物為更佳。 　　[0114]

又，具有倍半矽氧烷骨架的化合物，例如，亦可使用下述化學式(4)所表示之重複單位及下述化學式(5)所表示之重複單位的共聚物之樹脂。 　　[0115]

(化學式(4)中，R⁷ 為氫或碳數1以上、10以下之烷基，化學式(5)中，R⁸ 為碳數1以上、10以下之烷基，或苯基)。 　　具有倍半矽氧烷骨架的化合物，於上述內容以外，亦可適當地使用特開2007-258663號公報(2007年10月4日公開)、特開2010-120901號公報(2010年6月3日公開)、特開2009-263316號公報(2009年11月12日公開)，及特開2009-263596號公報(2009年11月12日公開)中所揭示的各倍半矽氧烷樹脂。 　　[0116] 其中，具有倍半矽氧烷骨架的化合物，以下述化學式(6)所表示之重複單位及下述化學式(7)所表示之重複單位之共聚物為較佳，以含有7：3之下述化學式(6)所表示之重複單位及下述化學式(7)所表示之重複單位的共聚物為更佳。 　　[0117]

具有倍半矽氧烷骨架的聚合物，可為無規構造、梯形構造，及籠型構造等，亦可為任何構造。 　　[0118] 又，含有Ti-O鍵結之化合物，例如，(i)四-i-丙氧基鈦、四-n-丁氧基鈦、四(2-乙基己基氧基)鈦，及鈦-i-丙氧基伸辛基乙醇酸酯等的烷氧基鈦；(ii)二-i-丙氧基・雙(乙醯基丙酮)鈦，及雙(乙基丙酮乙酸酯)丙烷二氧代鈦等的螯合物鈦；(iii)i-C₃ H₇ O-[-Ti(O-i-C₃ H₇ )₂ -O-]_n -i-C₃ H₇ ，及n-C₄ H₉ O-[-Ti(O-n-C₄ H₉ )₂ -O-]_n -n-C₄ H₉ 等的鈦聚合物；單硬脂酸(iv)三-n-丁氧基鈦、硬脂酸鈦、二異硬脂酸二-i-丙氧基鈦，及(2-n-丁氧基羰苯甲醯氧基)三丁氧基鈦等的醯酸酯鈦；(v)二-n-丁氧基・雙(三乙醇胺根(aminato))鈦等的水溶性鈦化合物等。 　　[0119] 其中，含有Ti-O鍵結之化合物，又以二-n-丁氧基・雙(三乙醇胺根)鈦(Ti(OC₄ H₉ )₂ [OC₂ H₄ N(C₂ H₄ OH)₂ ]₂ )為佳。 　　[0120] 上述分離層，為含有具有紅外線吸收性的構造之化合物，但分離層可再含有上述化合物以外的成份。該成份，可列舉如，填料、可塑劑，及提高支撐體剝離性之成份等。該些成份，只要不會妨礙或促進經由上述構造的紅外線吸收，及化合物之變質時，可由以往公知的物質或材料適當地選擇。 　　[0121] (紅外線吸收物質) 　　分離層，可含有紅外線吸收物質。分離層，於具有含有紅外線吸收物質之構成內容時，可經由吸收光而產生變質，其結果將會喪失接受光線照射前的強度或接著性。因此，僅施加些許之外力(例如，提高支撐體等)時，將會使分離層被破壞，而使支撐體與密封基板容易被分離。 　　[0122] 紅外線吸收物質只要具有經由吸收紅外線而產生變質之構成內容即可，例如，可適當使用碳黑、鐵粒子，或鋁粒子。紅外線吸收物質，依其種類之不同可吸收具有特定範圍波長之光線。使用光線照射具有分離層所使用的紅外線吸收物質所吸收的範圍之波長的分離層時，可使紅外線吸收物質適當地變質。 　　[0123] (反應性聚倍半矽氧烷) 　　分離層，可將反應性聚倍半矽氧烷進行聚合反應而形成。如此，可使分離層具備高耐藥性與高耐熱性。 　　[0124] 本說明書中，反應性聚倍半矽氧烷係指，聚倍半矽氧烷骨架之末端具有矽醇基，或，具有經由水解可形成矽醇基的官能基之聚倍半矽氧烷，於可形成該矽醇基或矽醇基的官能基經縮合反應，而可互相聚合者。又，反應性聚倍半矽氧烷，只要為具有矽醇基，或，可形成矽醇基的官能基時，可使用具備有無規構造、籠型構造、梯形構造等的倍半矽氧烷骨架之反應性聚倍半矽氧烷。 　　[0125] 又，反應性聚倍半矽氧烷，以具有下述化學式(8)所示構造者為較佳。 　　[0126]

化學式(8)中，R”，各自獨立為由氫及碳數1以上、10以下之烷基所成之群所選出者，又以由氫及碳數1以上、5以下之烷基所成之群所選出者為較佳。R”為氫或碳數1以上、10以下之烷基時，於分離層形成步驟中，經由加熱處理，可使化學式(8)所表示的反應性聚倍半矽氧烷適當地進行縮合反應。 　　[0127] 化學式(8)中，p以1以上、100以下之整數為佳，以1以上、50以下之整數為較佳。反應性聚倍半矽氧烷，於具備化學式(8)所表示之重複單位時，相較於使用其他材料所形成者，其具有更高的Si-O鍵結之含量，而可形成於紅外線(0.78μm以上、1,000μm以下)、較佳為遠紅外線(3μm以上、1,000μm以下)、更佳為波長9μm以上、11μm以下之間，具有高吸光度的分離層。 　　[0128] 又，化學式(8)中，R’，各自獨立為互相相同，或相異之有機基。其中，R，例如，芳基、烷基，及烯基等，該些有機基可具有取代基。 　　[0129] R’為芳基之情形，可列舉如，苯基、萘基、蒽基、菲基等，又以苯基為較佳。又，芳基，可介由碳數1～5之伸烷基鍵結於聚倍半矽氧烷骨架。 　　[0130] R’為烷基之情形，烷基可列舉如，直鏈狀、支鏈狀，或環狀之烷基。又，R為烷基之情形，其碳數以1～15為佳，以1～6為較佳。又，R為環狀之烷基之情形，可為具有單環狀或2～4環狀構造之烷基。 　　[0131] R’為烯基之情形，與為烷基之情形相同，可列舉如，直鏈狀、支鏈狀，或環狀之烯基等，烯基，其碳數以2～15為佳，以2～6為較佳。又，R為環狀烯基之情形，可為單環狀或2～4環狀構造之烯基。烯基，例如，乙烯基，及烯丙基等。 　　[0132] 又，R’所具有的取代基，可列舉如，羥基及烷氧基等。取代基為烷氧基時，可列舉如，直鏈狀、支鏈狀，或環狀之烷基烷氧基等，烷氧基中之碳數以1～15為佳，以1～10為較佳。 　　[0133] 又，其中一觀點為，反應性聚倍半矽氧烷之矽氧烷含量，以70莫耳%以上、99莫耳%以下為佳，以80莫耳%以上、99莫耳%以下為較佳。反應性聚倍半矽氧烷之矽氧烷含量為70莫耳%以上、99莫耳%以下時，於照射紅外線(較佳為遠紅外線，更佳為波長9μm以上、11μm以下之光線)時，可形成容易變質的分離層。 　　[0134] 又，其中一觀點為，反應性聚倍半矽氧烷之重量平均分子量(Mw)，以500以上、50,000以下為佳，以1,000以上、10,000以下為較佳。反應性聚倍半矽氧烷之重量平均分子量(Mw)為500以上、50,000以下時，可容易溶解於溶劑，而容易塗佈於支撐板上。 　　[0135] 可作為反應性聚倍半矽氧烷使用的市售品，例如，小西化學工業股份有限公司製之SR-13、SR-21、SR-23及SR-33等。 　　[0136] ＜層合體之製造方法，及基板處理方法＞ 　　本發明之一實施形態(實施形態4)為有關層合體之製造方法，其為將具備有實際裝設有元件的再配線層，與使用密封材料密封上述元件的密封體之密封基板，介由接著層層合於支撐上述密封基板的支撐體上的層合體之製造方法，其特徵為，包含於上述支撐體上，塗佈上述接著劑組成物以形成上述接著層之接著層形成步驟。又，本實施形態的層合體之製造方法中，為包含將作為支撐體之由透過光線之材料所製得之支撐體，於上述接著層形成步驟前，使用光線照射上述支撐體，使其變質形成分離層之分離層形成步驟。 　　[0137] 又，本實施形態之基板處理方法為包含，使用本發明之一實施形態的層合體之製造方法，製得上述層合體後，介由上述支撐體照射光線，使上述分離層變質，而使上述層合體由上述支撐體分離之分離步驟，與於分離步驟後，使用洗淨液去除殘留於上述密封基板側之上述接著層的殘渣之去除步驟。 　　[0138] 圖1為說明本發明之實施形態1的層合體之製造方法，及基板處理方法中各步驟之圖。本實施形態的層合體之製造方法，為依序實施分離層形成步驟、接著層形成步驟，及密封基板形成步驟。 　　[0139] [分離層形成步驟] 　　如圖1(a)所示般，分離層形成步驟為，使用例如化學氣相成長(CVD)法等，對可透過光線的支撐體1的一側之平面部1a上，照射光線使其變質而形成分離層2。又，「一側之平面部」係指，支撐體1所具有的平面部中之一個之意。又，「平面部」，可具有實質上觀察為平面程度的微細凹凸。 　　[0140] [接著層形成步驟] 　　如圖1(b)所示般，接著層形成步驟，例如，使用旋轉塗佈、浸潤、直排滾輪、噴霧塗佈、縫隙塗佈等的方法塗佈上述接著劑組成物，再經由加熱，或，放置於減壓環境下以去除接著劑組成物所含的稀釋溶劑。隨後，若接著層含有熱聚合起始劑時，亦可經由加熱處理，可使該接著層所含的硬化性單體進行聚合。又，將接著層3加熱之條件，可於熱聚合起始劑中的1分鐘半衰溫度，及1小時半衰溫度為基準，適當地進行設定即可，例如，於50℃以上、300℃以下範圍內之溫度中，於真空下或氮氣體等的惰性氣體氛圍下進行者為佳，又以於氮氣體等的惰性氣體氛圍下進行者為較佳。 　　[0141] 又，接著層含有光聚合起始劑時，經由於氮氣體等的惰性氣體氛圍下進行曝光結果，可使該接著層所含的硬化性單體進行聚合。又，曝光條件，可配合光聚合起始劑之種類等作適當之設定即可。 　　[0142] 又，若接著層3不含硬化性單體時，於去除溶劑之後，並不需進行加熱，或曝光處理。 　　[0143] [密封基板之形成步驟] 　　如圖1(c)～(f)所示般，密封基板形成步驟，為於接著層3上，形成密封基板7之步驟。本實施形態中之密封基板形成步驟，為依再配線層形成步驟、實際裝設步驟、密封步驟，及薄化步驟之順序進行。 　　[0144] [再配線層形成步驟] 　　如圖1(c)所示般，再配線層形成步驟，為於接著層3上形成再配線層4。 　　[0145] 一實施形態中，再配線層4的形成順序，首先，於接著層3上，形成氧化矽(SiO_x )、感光性樹脂等的介電體層。由氧化矽形成的介電體層，例如，可使用濺鍍法、真空蒸鍍法等而形成。由感光性樹脂所形成之介電體層，例如，可使用旋轉塗佈、浸潤、直排滾輪、噴霧塗佈及縫隙塗佈等的方法塗佈感光性樹脂之方式形成。 　　[0146] 隨後，於介電體層上，使用金屬等的導電體形成配線。配線之形成方法，例如，可使用光微影蝕刻(光阻微影蝕刻)等的微影蝕刻處理、蝕刻處理等的公知半導體製程方法。該些微影蝕刻處理，例如，使用正型光阻劑之微影蝕刻處理，及使用負型光阻劑之微影蝕刻處理等。 　　[0147] 如此，於進行光微影蝕刻處理，及蝕刻處理等之際，接著層3為曝露於氟化氫酸等的酸、氫氧化四甲基銨(TMAH)等的鹼，及、溶解光阻劑所使用的光阻溶劑中。光阻溶劑，可使用PGMEA、環戊酮、N-甲基-2-吡咯啶酮(NMP)，及環己酮等。其中，接著層3，於環烯烴聚合物中，因硬化性單體的聚合而可使耐藥性更為提升。因此，不僅於酸、鹼，即使接著層3曝露於甚至該些光阻溶劑時，也可防止溶解，或剝離。因此，於接著層3上可經由光阻劑形成高精度的圖型，而更容易形成再配線層4。 　　[0148] 又，再配線層形成步驟，例如，就使接著層3上所形成的光阻劑硬化之觀點，而於200℃之高溫環境下、進行4小時左右的加熱處理。此時，接著層3，因具備有高耐熱性，故可防止接著層產生龜裂。又，接著層3，因具備有高耐熱性，故即使長時間曝露於高溫環境下時，也可容易地防止接著層3上所形成之光阻被膜產生收縮(shrink)。因此，接著層3上可容易地形成再配線層4。 　　[0149] 如圖1(d)所示般，實際裝設步驟，為於再配線層4上實際裝設元件5之步驟。於再配線層4上實際裝設元件5之方法，例如，可使用晶片貼片機等進行。又，實際裝設步驟中，於再配線層4上介由焊劑凸點而實際裝設元件5時，於密封元件5之前，該焊劑凸點亦可使用底部填充材(Underfill)予以密封。 　　[0150] 如圖1(e)所示般，密封步驟為，使用密封材料6密封元件5之步驟。其並未有特別限制之內容，密封材料6，例如，可於加熱至130℃～170℃之狀態，於維持高黏度狀態下，使用成型模具進行壓縮成型。因此，元件5於使用密封材料6進行密封時，接著層3為於配置元件5之狀態，於130℃～170℃之溫度進行加壓處理者。但，接著層3，因具備高耐熱性，故即使於130℃～170℃之溫度進行加壓時，可容易地防止配置元件5的再配線層4產生變形。 　　[0151] 如圖1(f)所示般，薄化步驟為，使密封材料6薄化。密封材料6，例如可薄化至元件5同等的厚度。 　　[0152] 又，可於薄化步驟後可再進行於密封材料上形成凸點，及形成絕緣層等處理。 　　[0153] 依以上步驟所得之圖1(g)所示層合體8，為依：可透過光線的支撐體1，與經由光線照射產生變質之分離層2，與接著層3，與密封基板7之順序層合而成，密封基板7為具備有：使用密封元件5的密封材料6所密封的密封體，與設置於該密封材料之一側平面部的配置有元件5的再配線層4。 　　[0154] [分離步驟] 　　如圖1(h)所示般，分離步驟為，介由支撐體1，使用光線L照射分離層2，使分離層2變質。所照射之光線L的種類及波長，可配合支撐體1的透過性及分離層2的材質適當地選擇，例如，使用YAG雷射、紅寶石雷射、玻璃雷射、YVO₄ 雷射、LD雷射、纖維雷射等的固體雷射、色素雷射等的液體雷射、CO₂ 雷射、準分子雷射、Ar雷射、He-Ne雷射等的氣體雷射、半導體雷射、自由電子雷射等的雷射光，或，非雷射光。如此，可使分離層2產生變質，使支撐體1與密封基板7形成容易分離之狀態。 　　[0155] 又，照射雷射光之情形的雷射光照射條件之一，可例如以下之條件，但並非限定於此：雷射光之平均輸出值，以1.0W以上、5.0W以下為佳，以3.0W以上、4.0W以下為較佳；雷射光之重複周波數，以20kHz以上、60kHz以下為佳，以30kHz以上、50kHz以下為較佳；雷射光之掃瞄速度，以100mm/s以上、10,000mm/s以下為佳。 　　[0156] 隨後，如圖1(i)所示般，分離步驟為，使支撐體1與密封基板7分離。例如，對支撐體1與密封基板7以互相離開之方向施加力量，而使支撐體1，與密封基板7分離。例如，將支撐體1及密封基板7中一者固定於平台之狀態下，另一者使用具備有風箱墊(bellows 等的吸附墊的分離板於保持吸附下將其提升，即可使支撐體1與密封基板7分離。 　　[0157] [去除步驟] 　　如圖1(h)所示般，去除步驟為，去除殘留於分離支撐體1後的密封基板7上的接著層3與分離層2。例如，可使用含有有機溶劑的洗淨液等，去除接著層3及分離層2之殘渣之去除步驟。接著層3，可使用接著劑組成物所使用的稀釋溶劑作為洗淨液，即，較佳為使用烴系溶劑，特別是以使用p-甲烷等的萜烯系溶劑，及四氫萘等的縮合環烴為更佳。 　　[0158] 經以上步驟，即可製得單離後之密封基板7。 　　[0159] 又，亦可對密封基板7進行焊球形成、切割處理，及、氧化膜形成等的處理。 　　[0160] [實施形態5] 　　以下，將說明本發明之其他實施形態(實施形態5)。又，於說明之簡便上，與上述實施形態所說明的構件具有相同機能的構件，將標記相同之符號，並省略其說明。實施形態2之層合體之製造方法，及基板處理方法，為依序實施分離層形成步驟、接著層形成步驟、密封基板形成步驟、分離步驟，及去除步驟，其中，密封基板形成步驟，為於接著層3上配置元件。又，如圖2(a)所示般，分離層形成步驟，因與實施形態1為相同之內容，故省略其說明。 　　[0161] [接著層形成步驟] 　　本實施形態的層合體之製造方法所包含的接著層形成步驟為，於支撐體1上塗佈本發明之一實施形態的接著劑組成物，並與實施形態1為相同之條件，去除接著劑組成物中所含的稀釋溶劑，但不進行隨後之加熱，或曝光使接著層硬化之步驟。 　　[0162] [密封基板形成步驟] 　　如圖2(c)～(f)所示般，密封基板形成步驟為，於接著層3上形成密封基板7。本實施形態中之密封基板形成步驟，為依配置步驟、密封步驟、薄化步驟，及再配線層形成步驟之順序進行。 　　[0163] 如圖2(c)所示般，配置步驟，為於接著層3上配置元件5。更具體而言，可列舉如，配置步驟為，於將形成接著層3的支撐體1，於加熱至100℃左右的狀態，例如，使用黏晶機(Die Bonder)等，將元件5壓著於接著層3上，使元件5配置於接著層3上。 　　[0164] 又，接著層含有熱聚合起始劑之情形，配置步驟中，可於接著層3上配置元件5之後，經由對接著層3進行加熱，使該接著層3所含的硬化性單體進行聚合反應。又，接著層含有光聚合起始劑之情形，接著層3可經由曝光而硬化。 　　[0165] 圖2(d)所示般，密封步驟，為使用密封材料6密封元件5。密封步驟，與實施形態1之情形相同，為使用密封材料6密封元件5，於接著層3配置元件5之狀態，於130℃～170℃之溫度下進行加壓處理。但，因接著層3具備有高耐熱性，故於130℃～170℃之溫度的溫度條件下，可防止因密封材料6之加壓而造成於接著層3上的元件5之位置產生偏離。因此，可於接著層3上，容易形成元件5以高精度配列而得之密封基板7。 　　[0166] 如圖2(e)所示般，薄化步驟，為使密封材料6薄化之步驟。密封材料6，例如，只要薄化至使元件5的端子部露出密封材料6為止即可。 　　[0167] 如圖2(f)所示般，再配線層形成步驟，為於密封體露出元件5的平面部形成再配線層4之步驟。 　　[0168] 本實施形態中，再配線層4之形成順序，因可與實施形態1為相同之方式，故將省略該說明。 　　[0169] 經由以上之步驟，可與實施形態1相同般，製得層合體9。 　　[0170] 隨後，如圖2(g)及(h)所示般，分離步驟中，經由將光線由支撐體1向分離層2照射時，可使分離層2變質，而將支撐體1由層合體9分離。又，隨後，於去除步驟中，與實施形態1相同般，經使用烴系溶劑去除接著層3結果，即可製得密封基板7(圖2之(i))。 　　[0171] [實施形態6] 　　以下，將對本發明之實施形態6進行說明。又，於說明之簡便上，與上述實施形態1及2中所說明的構件具有相同機能的構件，將標記相同之符號，並省略該說明。實施形態3之層合體之製造方法，及密封基板之製造方法，為依分離層形成步驟、分離層周邊部份去除步驟、接著層形成步驟、密封基板形成步驟，及接著層去除步驟之順序實施。 　　[0172] [分離層形成步驟] 　　圖3(a)所示般，分離層形成步驟，因與實施形態1及2為相同之內容，故將省略該說明。 　　[0173] [分離層周邊部份去除步驟] 　　如圖3(b)所示般，分離層周邊部份去除步驟為，例如，使用EBR(Edge Bead Removal)處理，去除形成於支撐體1之周邊部份1b全周的分離層2。周邊部份1b為平面部1a之周邊部份。如此，如圖3(b)所示般，於平面部1a上，被去除分離層2的周邊部份1b所包圍的部份，為形成分離層2之狀態。EBR處理之詳細內容將於後敘述。 　　[0174] [接著層形成步驟] 　　圖3(c)所示般，接著層形成步驟為，於支撐體1中之去除周邊部份1b全周的分離層2之側的面上，形成接著層3。如此，可使支撐體1上所形成的分離層2全面被接著層3所覆蓋。又，接著層3之形成方法，因與實施形態1為相同之方法，故將省略該說明。 　　[0175] [密封基板形成步驟] 　　如圖3(d)～(g)所示般，密封基板形成步驟為，於接著層3上形成密封基板7’之步驟。本實施形態中之密封基板形成步驟，為依再配線層形成步驟、實際裝設步驟、密封步驟，及薄化步驟之順序進行。 　　[0176] 如圖3(d)所示般，實施形態3為，於再配線層形成步驟中，將接著層3上所形成的再配線層4之外周端部經由修整處理而去除。又，再配線層4之修整，可使用研磨機等的公知手段經由研削而去除即可。如此，於隨後步驟中，可於層合體8’(圖3)中容易地進行EBR處理。 　　[0177] 又，再配線層4之形成方法，因與實施形態1為相同之內容，故將省略該說明。 　　[0178] 如圖3(e)～(g)所示般，實施形態3中，為進行實際裝設步驟、密封步驟，及薄化步驟。又，實施形態3中，實際裝設步驟、密封步驟，及薄化步驟，可依與實施形態1相同之方法進行，故將省略該說明。 　　[0179] [接著層去除步驟] 　　如圖3(h)所示般，接著層去除步驟為，例如，經由EBR處理，而去除形成於支撐體1之周邊部份1b全周的接著層3。接著層3中，形成於支撐體1之周邊部份1b全周的部份，因可不介由分離層2，而使支撐體1與密封基板7’接著，故去除該部份時，於使分離層2變質之際，可使支撐體1與密封基板7’圓滑地分離。 　　[0180] 特別是，去除較支撐體1上所形成的分離層2之外周端部2a為更外側所形成的接著層3時，可使支撐體1與密封基板7’，必須介由分離層2形成接著之狀態，故使分離層2變質之際，可使支撐體1與密封基板7’更圓滑地分離。 　　[0181] [分離步驟～去除步驟] 　　如圖3(i)～(k)所示般，為依與實施形態1相同方式，進行分離步驟，及去除步驟之方式，而可製造密封基板7’。 　　[0182] (EBR處理) 　　上述(A)分離層周邊部份去除步驟中，去除支撐體1之周邊部份1b全周所形成的分離層2之EBR處理，及(B)接著層去除步驟中，去除支撐體1之周邊部份1b全周所形成的接著層3之EBR處理之方法，例如，可使用(i)使用溶劑溶解去除之方法、(ii)使用切斷器或刀片等進行物理性切斷去除之方法、(iii)於大氣壓下以灰化(ashing)處理去除之方法等。其中，就強度及實用性之觀點，以使用溶劑去除之方法為佳。 　　[0183] 使用溶劑去除之方法中，所使用的溶劑，只要可溶解去除對象的分離層2或接著層3者即可，並未有特別之限定，熟悉該項技術者，可配合所欲去除之對象的組成容，適當地選擇使用。例如，對接著層3而言，特別是可以使用p-甲烷等的萜烯系溶劑，及四氫萘等的縮合環烴等。又，對分離層2而言，例如，可使用由單異丙醇胺(MIPA)等的一級脂肪族胺、2-(甲胺基)乙醇等的二級脂肪族胺、三乙醇胺等的三級之脂肪族胺、環己胺等的脂環式胺、苄胺等的芳香族胺及N‐羥基乙基哌啶等的雜環式胺所成之群所選出之至少1種的胺類，或，含有該些胺類的溶劑等。又，溶劑中，於上述(添加溶劑)之欄所列舉之內容，亦可配合使用萜烯溶劑以外的有機溶劑。 　　[0184] 供應溶劑之方法，例如，經由溶劑之噴灑，而將溶劑供應於去除對象之方法、將去除對象浸漬於溶劑中之方法等。 　　[0185] 經由溶劑之噴灑，而將溶劑供應於去除對象之方法中，就可均勻供應溶劑之觀點，以使支撐體1於迴轉中，將溶劑供應於去除對象之方法為佳。使支撐體1於迴轉中，供應溶劑之方法，例如，將噴灑溶劑的噴嘴配置於支撐體1之周邊部份1b的鄰接外側的正上方，再將溶劑由支撐體1之周邊部份1b的鄰接外側於持續滴入中，將支撐體1使用旋轉塗佈器進行迴轉之方法等。如此，可由支撐體1之周邊部份1b全周的鄰接外側直接供應溶劑。又，所配置的噴嘴數量並未有特別之限制，只要為1個以上即可。 　　[0186] 伴隨支撐體1之迴轉及溶劑噴灑的上述方法中，支撐體1之迴轉速度、溶劑由噴嘴供應時的溶劑之流量，及溶劑之供應時間等，依所欲去除對象之組成內容、去除對象之厚度、使用溶劑之種類，及去除程度等而有所差異，但熟悉該項技術者，可毫無困難的評估其最佳條件並予以決定。 　　[0187] 又，使用溶劑溶解去除對象後，以將支撐體1等進行乾燥處理為佳。經由乾燥步驟，可去除不需要的溶劑、非去除對象部份的浸入分離層2或接著層3的溶劑。 　　[0188] 乾燥方法，例如，可使用旋轉塗佈器等，於使支撐體1於迴轉中振動乾燥、使用氮氣體等之以噴霧方式鼓風之乾燥、經燒焙之乾燥，及減壓乾燥等。又，該些乾燥方法中，將其中任一方法單獨使用，或將任意2個以上的方法組合使用之方法皆為可能。 　　[0189] [實施形態7] 　　以下將說明本發明之實施形態7。又，於說明之簡便上，上述實施形態1～3中所說明的構件具有相同機能的構件，將標記相同之符號，並省略該說明。實施形態4之層合體之製造方法，及密封基板之製造方法，為依分離層形成步驟、分離層周邊部份去除步驟、接著層形成步驟、密封基板形成步驟，及接著層去除步驟之順序實施。 　　[0190] [分離層形成步驟～接著層形成步驟] 　　分離層形成步驟、分離層周邊部份去除步驟，及接著層形成步驟，與實施形態2為相同之內容，故將省略該說明。 　　[0191] [密封基板形成步驟] 　　密封基板形成步驟為，於接著層3上，配置元件5後予以密封。即，其為依與實施形態2相同之步驟，而形成密封基板7’。隨後，如圖4(a)所示般，將密封基板7’的外周端部經由修整處理而去除。又，密封基板7之修整，可使用研磨機等的公知手段予以研削而去除即可。如此，於隨後的步驟中，於層合體9’(圖4)中，可容易進行胺處理。 　　[0192] [接著層去除步驟] 　　如圖4(b)所示般，其與實施形態3相同，於實施形態4中，密封基板7’的外周端部亦可經由修整處理，而去除較分離層2的外周端部2a為更外側所形成的接著層3。因此，於使分離層2變質之際，可使支撐體1與密封基板7’圓滑地分離。 　　[0193] 隨後，與實施形態1～3相同般，經使用烴系溶劑去除接著層3結果，而可製得密封基板7’。 　　[0194] [其他實施形態] 　　本發明之層合體之製造方法及基板處理方法，並不僅限定於上述各實施形態(實施形態4、實施形態5、實施形態6、實施形態7)。例如，其他實施形態之層合體之製造方法，可將各實施形態的層合體之製造方法所形成的層合體中之密封基板，介由其他的接著層及其他的分離層，而層合於其他支撐體的層合體之製造方法。如此，可將形成密封基板時所使用的接著層側之支撐體分離，並使用其他的支撐體，以支撐密封基板之狀態下，對該密封基板進行適當的加工。 　　[0195] 又，其他實施形態之層合體之製造方法，為製造一依基板、接著層，及支撐體之順序層合而得之層合體的層合體之製造方法，其為包含：於上述基板上，或上述支撐體上的至少一者，塗佈本案一實施形態的接著劑組成物，經由加熱而形成上述接著層之接著層形成步驟。其中，基板可列舉如，矽、陶瓷，或聚醯亞胺樹脂等的可撓式基板等，典型上，可為矽內埋式載板(Interposer)。 　　[0196] 具有上述構成內容時，於支撐體上，例如，容易對矽內埋式載板(Interposer)進行加工，而形成貫通電極。即，使用本發明之實施形態的接著劑組成物形成接著層時，即使於散入型半導體密封技術中，也容易形成層合體。 　　[0197] 本發明並不僅限定於上述各實施形態，可於請求項所示範圍進行各種的變更，將不同的實施形態所分別揭示的技術的手段適當組合而得之實施形態，亦包含於本發明之技術的範圍中。 [實施例] 　　[0198] 使用作為樹脂成份之基底聚合物與硬化性單體，製得實施例1～15之接著劑組成物。同時製作比較例1～4之接著劑組成物，隨後，使用實施例1～15，及比較例1～4之接著劑組成物形成接著層，並對各接著層實施使用壓縮模具進行元件密封之適應性評估、對形成絕緣圖型製程的適應性評估。 　　[0199] [接著劑組成物之製造，及接著層之形成] 　　[0200] (實施例1) 　　將實施例1之接著劑組成物的APL6015(環烯烴聚合物：三井化學股份有限公司製)85重量份，與作為硬化性單體的A-DCP(三環癸烷二甲醇二丙烯酸酯：新中村化學股份有限公司製)15重量份，溶解於400重量份之十氫萘中。其次，對100重量份之硬化性單體，添加Paroil TCP(熱聚合起始劑：日本油脂股份有限公司製)，使其達2重量份，而製得接著劑組成物。又，Paroil TCP為，溶解於10重量份的乙酸丁酯(添加溶劑)中，添加於樹脂成份者。 　　[0201] 其次、於玻璃支撐體(10cm×10cm、厚度700μm)上，於流量400sccm、壓力700mTorr、高周波電力2500W及成膜溫度240℃之條件下，使用作為反應氣體的C₄ F₈ ，依CVD法形成分離層之氟化碳膜(厚度1μm)。 　　[0202] 其次，將實施例1之接著劑組成物，使用旋轉塗佈法於維持1500rpm迴轉中，塗佈於形成於玻璃支撐體的分離層上。隨後，將塗佈有實施例1之接著劑組成物的玻璃支撐體，於140℃、5分鐘之條件，經由預熱而形成實施例1之接著層(膜厚3μm)。該實施例1之接著層，分別使用於下述評估1及2。 　　[0203] (實施例2～15) 　　實施例2～15，為使用與實施例1相異的組成內容及組成比，分別添加基底聚合物、硬化性單體及聚合起始劑，而製得接著劑組成物。隨後，分別使用該些接著劑組成物形成實施例2～15之接著層。 　　[0204] (比較例1～4) 　　除使用玻璃轉移溫度較低的環烯烴聚合物，或熱可塑性彈性體以外，其他皆依製作實施例1之接著劑組成物的順序，製得比較例1～4之接著劑組成物。其次，分別使用比較例1～4之接著劑組成物，依與實施例1相同之順序，旋轉塗佈於形成分離層的玻璃支撐體上，於160℃之條件，進行5分鐘之預熱，而形成厚度5μm之接著層。 　　[0205] 又，實施例1～15，及比較例1～4中所使用的基底聚合物、硬化性單體，係如以下所示之內容。又，以下表2～4中，為分別標記實施例1～15，及比較例1～4之組成內容。 　　[0206] ・以下為式(9)所示環狀聚烯烴(三井化學股份有限公司製、「APL6015(商品名)」、Tg=140、Mw=80,000、Mw/Mn=2.0、m：n=58：42(莫耳比)) 　　[0207]

[0208] ・以下為式(10)所示環狀聚烯烴(聚塑膠股份有限公司製、「TOPAS6015(商品名)」、Tg=140、Mw=80,000、Mw/Mn=2.0、m：n=48：52(莫耳比)) 　　[0209]

[0210] ・上述式(10)所示環狀聚烯烴(聚塑膠股份有限公司製、「TOPAS6017(商品名)」、降莰烯含量82重量%、Tg=160、Mw=80,000、Mw/Mn=2.0、m：n=43：57(莫耳比)) 　　・苯乙烯-伸乙基-伸丙基-苯乙烯之三嵌段共聚物(熱可塑性彈性體)：SEPS(股份有限公司KURARE製、「Septon2004(商品名)」、Tg=90℃、苯乙烯含量18%、分子量90,000) 　　[0211] 又，實施例及比較例中，所使用的環烯烴聚合物之重量平均分子量，及動態機械分析(DMA:Dynamic Mechanical Analysis)所求得之玻璃轉移溫度(Tg)，係如下表1所示之內容。 　　[0212]

[0213] 又，如表1所示，玻璃轉移溫度(Tg(DMA)[℃])，為使用動態黏彈性測定裝置Rheologel-E4000(UBM股份有限公司製)，於周波數1Hz之條件下，依5℃/分鐘之升溫速度，由溫度25℃上升至300℃為止間所測定的黏彈性變化為基礎所求得者。 　　[0214] 後述表2～4中，除實施例1～10、12～15之接著層之玻璃轉移溫度(Tg(DMA)[℃])，為進行140℃、5分鐘之預熱處理，隨後於200℃、1小時、氮氣氛圍下之加熱處理後進行測定以外，其他皆依與表1所示之玻璃轉移溫度之測定為相同條件下進行測定者。 　　[0215] 又，實施例11之接著層之玻璃轉移溫度(Tg(DMA)[℃])，為進行140℃、5分鐘之預熱處理，隨後使用高壓水銀燈UV曝光機(ORC股份有限公司製)，於減壓真空下、500mJ/cm² 之條件下，進行曝光處理後所測定者以外，其他皆依與表1所示之玻璃轉移溫度之測定為相同條件下進行測定者。 　　[0216] 比較例1、2、4之接著層之玻璃轉移溫度(Tg(DMA)[℃])，為進行160℃、5分鐘之預熱處理以外，其他皆依與表1所示之玻璃轉移溫度之測定為相同條件下進行測定者。又，比較例3之接著層之玻璃轉移溫度(Tg(DMA)[℃])，除未進行160℃、5分鐘之預熱處理以外，其他皆依與實施例1之接著層為相同條件下進行加熱處理，測定玻璃轉移溫度者。 　　[0217] [硬化性單體] 　　・以下為式(11)所示三環癸烷二甲醇二丙烯酸酯(新中村化學股份有限公司製、「A-DCP(商品名)」) 　　[0218]

・以下為式(12)所示三環癸烷二甲醇二甲基丙烯酸酯(新中村化學股份有限公司製、「DCP(商品名)」) 　　[0219]

[0220] ・以下為式(13)所示之1,3-金剛烷二醇二丙烯酸酯(三菱氣體化學股份有限公司製、「ADDA(商品名)」) 　　[0221]

[0222] ・以下為式(14)所示之5-羥基-1,3-金剛烷二醇二甲基丙烯酸酯(三菱氣體化學股份有限公司製、「HADDM(商品名)」) 　　[0223]

[0224] ・以下為式(15)所示之1,3,5-金剛烷三醇三甲基丙烯酸酯(三菱氣體化學股份有限公司製、「ADTM(商品名)」) 　　[0225]

[0226] [評估1：對使用壓縮模具進行元件密封之適應性評估] 　　於實施例1之接著層的特定位置上配置裸晶(Bare chip)，使用密封劑(密封材料)密封裸晶。此時裸晶位置偏離之程度，作為使用壓縮模具進行密封(molding)之適應性評估。 　　[0227] 裸晶(Bare chip)之配置，為使用黏晶機(Die Bonder)(TRESKY公司製)實施。首先，將黏晶機板加熱至150℃，於35N之壓力下，以1秒鐘時間，壓著實施例1之接著層上的2mm四方的矽製裸晶。如此，如圖5所示般，即將裸晶(元件)5配置於由玻璃支撐體1所形成的接著層3中的四邊之周邊部，及中央部。 　　[0228] 其次，將配置裸晶的實施例1之接著層，以200℃、1小時，於氮氣氛圍下進行加熱。加熱後，使裸晶形成配置之狀態，將形成實施例1之接著層的玻璃支撐體，載置於加熱至50℃之板上，再放上含有12g環氧樹脂的密封劑，於低於10Pa的減壓條件下，使用貼附裝置，對加熱至130℃之押壓用板，施加1噸的壓力，並進行5分鐘之壓縮(如圖2(c)及(d)所示，相當於配置步驟)。如此，配置於接著層上的裸晶將受到密封材料所密封，而製得層合密封基板的實施例1之層合體。 　　[0229] 使用光學顯微鏡由玻璃面側觀察實施例1之層合體，並評估貼附後裸晶5位置偏離的程度。如圖5所示般，由配置於接著層3上的各裸晶5貼附時的位置，求取向X方向，及Y方向移動距離之和，作為各裸晶之移動距離。隨後，求取裸晶5之移動距離的平均值，作為評估移動距離之評估值。 　　[0230] 對壓縮模具進行密封之適應性評估中，於裸晶5之移動距離為3μm以下之情形，評估為無位置偏離「○」、裸晶5之移動距離大於3μm之情形，則評估位置有偏離「×」。 　　[0231] 又，實施例2～10、12～15，及比較例3之接著層，為依與實施例1相同之順序，形成接著層後，再對使用壓縮模具進行元件密封之適應性評估。 　　[0232] 又，比較例1、2，及4之接著層，為將裸晶壓著於特定位置之後，除不對接著層進行加熱以外，其他皆依與評估實施例1之接著層的順序相同般，進行對使用壓縮模具進行元件密封之適應性評估。 　　[0233] 實施例11之接著層，為使用黏晶機壓著裸晶後，除使用高壓水銀燈UV曝光機(ORC股份有限公司製)，替代於200℃、1小時、氮氣氛圍下的加熱處理，並於於減壓真空下、500mJ/cm² 之條件下進行曝光處理以外，其他皆依與評估實施例1之接著層的順序相同般，進行對使用壓縮模具進行元件密封之適應性評估。 　　[0234] 以下所示之表2～4中，為表示使用壓縮模具進行元件密封之適應性評估結果。 　　[0235] [評估2：對絕緣圖型形成製程之適應性評估] 　　對依與評估1所使用的接著層為相同順序製得之實施例1～15，及比較例1～4之接著層，進行絕緣圖型形成製程之適應性評估(評估2)。對絕緣圖型形成製程之適應性評估中，為評估對光阻溶劑之耐藥性，及評估圖型形成後的加熱處理之耐熱性。 　　[0236] 又，實施例1～10、12～15及比較例1～4中，於絕緣圖型形成製程之適應性評估，為分別於200℃、1小時、氮氣氛圍下的加熱處理後進行。又，實施例11之接著層，為依與評估1中之曝光條件相同條件曝光之後，進行對絕緣圖型形成製程之適應性評估。 　　[0237] (耐藥性之評估) 　　首先，於正型光阻之評估中，為使用絕緣膜形成用組成物PN-0379D(含PGMEA、東京應化工業股份有限公司製)以1000rpm旋轉塗佈於各接著層後，經110℃、4分鐘條件之預熱處理，而形成5μm的乾燥被膜。其次，使用ORC公司製之平行光曝光機(ghi)，對該被膜進行圖型曝光。其次，將曝光後的被膜於23℃下，浸漬於2.38%TMAH水溶液中5分鐘，而形成100μm寬的線路圖型之經正型光阻而得的感光性絕緣膜。 　　[0238] 又，負型光阻之評估中，為使用負型光阻之BL301(含NMP、旭化成股份有限公司製)以1000rpm旋轉塗佈於各接著層後，經110℃、4分鐘條件之預熱處理，而形成5μm之接著層。其次，使用ORC公司製之平行光曝光機(ghi)進行圖型曝光後，於23℃下，浸漬於環己酮中5分鐘，而形成100μm寬的線路圖型之經負型光阻而得的感光性絕緣膜。 　　[0239] 耐藥性之評估，為將上述所得之圖型分別於23℃下浸漬於PGMEA、TMAH、NMP，及環己酮中5分鐘，再以目視方式觀察浸潤時的各接著層之外觀變化。耐藥性之評估中，重量及外觀未發現變化時評估為「○」，發現重量變化或外觀產生變化(線路圖型之浮起，或接著層中有無龜裂)時評估為「×」。 　　[0240] 以下之表2～4，為表示對絕緣圖型形成製程之適應性評估中，耐藥性之評估結果。 　　[0241] (耐熱性之評估) 　　其次，耐熱性之評估為，將評估耐藥性後之各層合體，於200℃、4小時、氮氣氛圍下，進行加熱處理後，評估其形成100μm寬的線路圖型是否會發生收縮(shrink)。耐熱性之評估，為使用光學顯微鏡，測定加熱處理後的100μm寬之線路圖型的寬度，寬度之增減低於5μm時，則評估耐熱性為「○」，寬度之增減大於5μm時，則評估耐熱性為「×」。 　　[0242] 以下之表2～4，為表示對絕緣圖型形成製程之適應性評估中，耐熱性之評估結果。 　　[0243] 又，實施耐熱性之評估後，於形成線路圖型的各接著層上配置裸晶，並依與評估1相同條件，使用含有環氧樹脂之密封劑密封該裸晶，而製得層合於密封基板之層合體。 　　[0244] [評估3：洗淨性之評估] 　　於評估1及2所形成的各層合體中，將波長532nm之雷射光由玻璃支撐體側向分離層側照射，使該分離層產生變質。其次，將各層合體由玻璃支撐體分離，露出接著層。使用作為洗淨液之p-甲烷，進行5分鐘、噴霧洗淨處理，以洗淨殘留有接著層的密封基板。洗淨性之評估，為以目視方式確認密封基板上是否存在接著層之殘渣，完全未發現殘渣之情形，其洗淨性評估為「○」，發現大量殘渣之情形，其洗淨性評估為「×」。 　　[0245] 以下之表2，為表示實施例1～6之接著劑組成物的組成內容，及各評估結果。

[0246] 以下之表3，為表示實施例7～15之接著劑組成物的組成內容，及各評估結果。 　　[0247]

[0248] 以下之表4，為表示比較例1～4之接著劑組成物的組成內容，及各評估結果。 　　[0249]

[0250] (各評估結果) 　　如表2及3所示般，於使用壓縮模具進行元件密封之適應性評估中，實施例1～15之接著層中任一者，皆未發現所配置之裸晶位置產生偏離(○)。相對於此，如表4所示般，比較例1～4中，則發現裸晶位置產生偏離(×)。由該些結果得知，使用Tg為140℃以上的基底聚合物時，可製得一適合使用於接著層上密封元件的容易密封該元件的接著劑組成物。 　　[0251] 又，以下之表5，為表示於實施例7之接著層中，對使用壓縮模具進行元件密封之適應性評估中，將押壓用加壓機中之加熱溫度由130℃變更為150℃，及170℃之結果。 　　[0252]

[0253] 又，如表5所示般，相對於比較例1中發現晶片產生較大移動(535μm)之現象，實施例7中，即使密封時的平板溫度為170℃時，也幾乎未發現晶片位置產生偏離(≦3μm)。 　　[0254] 又，如表2及3所示般，於使用壓縮模具進行元件密封之適應性評估中，無論實施例1～15之接著層中之任一者，皆未發現配置之裸晶位置產生偏離(○)。相對於此，如表4所示般，比較例1～4中，則發現裸晶位置產生偏離(×)。特別是比較例3之接著層中，即使添加A-DCP，於評估1及評估2中，仍未能得到充分之結果。由該些實施例1～15，及比較例1～4之結果得知，確認使用Tg為100℃以上的環烯烴聚合物及硬化性單體時，可製得即使於高溫環境下，施加力量時，也可防止變形的接著層。又，由此結果得知，確認使用Tg為100℃以上之環烯烴聚合物及硬化性單體時，可製得一種可於接著層上配置元件，並可容易地對該元件進行密封的接著劑組成物。 　　[0255] 對絕緣圖型形成製程之適應性評估的耐藥性中，確認於實施例1～15，及比較例1～4中之任一者，對各光阻溶劑皆具備有高耐藥性。其中，於耐熱性之評估中，實施例1～15之接著層，於200℃、4小時之加熱條件中，於接著層上所形成的光阻圖型皆未發現些微之收縮(〇)。相對於此，比較例1～4之接著層，則發現光阻圖型之收縮現象(×)。由上述結果得知，於併用Tg較高的環烯烴聚合物，與硬化性單體時，可形成防止光阻圖型收縮的接著層。 　　[0256] 又，將實施例7、比較例1之接著層上所形成的線路圖型，與未形成接著層而直些形成玻璃支撐體上的線路圖型，依與評估2中之耐熱性評估為相同條件下進行加熱處理，並測量其線路圖型寬度之增減，及變化量。其結果係如以下表6所示。 　　[0257]

[0258] 如表6所示般，於使用光阻形成圖型之方法中的加熱處理之前後間，確認於實施例7之接著層上所形成的光阻圖型的收縮程度，與於玻璃支撐體上直接形成的光阻圖型的收縮程度，幾乎未有任何變化。 　　[0259] 此外，於洗淨性之評估(評估3)中，實施例1～15之接著層，如表2～4所示般，可使用p-甲烷予以良好地洗淨去除(○)。 　　[0260] 由以上結果得知，於Tg為100℃以上的環烯烴聚合物中配合硬化性單體時，可製得一種對絕緣圖型形成製程具有適應性，及對絕緣圖型形成製程具有高適應性的接著層之接著劑組成物 [產業上利用性] 　　[0261] 本發明特別是適合使用於使用散出型技術的半導體裝置製造中。 [0011] Hereinafter, embodiments of the present invention will be described in detail. <Adhesive composition (Embodiment 1)> The adhesive composition of one embodiment of the present invention (Embodiment 1) is a layer obtained by laminating a substrate, an adhesive layer, and a support in this order In the combination, the adhesive composition forming the above-mentioned adhesive layer is characterized in that the glass transition temperature of the above-mentioned adhesive layer is 160°C or higher, and the resin component in the adhesive layer is a cycloolefin polymer containing a glass transition temperature of 160°C or higher . Also, the glass transition temperature of the adhesive layer formed by the adhesive composition can use known methods, for example, using Dynamic Mechanical Analysis (Dynamic Mechanical Analysis), under the condition of frequency 1Hz, at 5°C/min The heating rate can be calculated based on the change of viscoelasticity measured when the temperature is raised from 25°C to 300°C. [0014] Also, in this specification, when there is no special explanation, "resin component" means cycloolefin polymer, and the meaning of curable monomer described later. The adhesive layer formed using the adhesive composition having the above-mentioned constitution has high heat resistance and high chemical resistance required for forming a sealing substrate (substrate). Moreover, after forming a sealing substrate, the adhesive layer which can remove the residue of an adhesive layer suitably using a solvent can also be formed. In addition, the high heat resistance of the adhesive layer formed by the adhesive composition refers to, for example, (i) the meaning that deformation can be prevented when pressure is applied in a high-temperature environment, (ii) a long-term When exposed to high temperature environment, there will be no signs of damage such as cracks. [Resin Component] The adhesive composition according to the first embodiment of the present invention contains a cycloolefin polymer having a glass transition temperature of 160° C. or higher as a resin component. When a cycloolefin polymer with a glass transition temperature of 160°C or higher is included, an adhesive layer that can be properly removed by solvents can be formed in addition to having high heat resistance and high chemical resistance. [0017] The glass transition point (Tg) of the cycloolefin polymer is preferably above 160°C, preferably above 200°C. Cycloolefin polymer, specifically, can enumerate such as, the ring-opening polymer of the monomer component that contains cycloolefin monomer, the addition polymerization that the monomer component that contains cycloolefin monomer obtains through addition polymerization things etc. The aforementioned cycloolefin polymers, for example, norbornene, norbornadiene, etc. Tetracyclics, pentacyclics such as cyclopentadiene trimers, heptacyclics such as tetracyclopentadiene, or alkyl groups (methyl, ethyl, propyl, butyl, etc.) of these polycyclics ) substituents, alkenyl (vinyl, etc.) substituents, alkylene (ethylene, etc.) substituents, aryl (phenyl, tolyl, naphthyl, etc.) substituents, etc. things etc. Among these, polymers using monomers having a norbornene structure selected from norbornene, tetracyclododecene, or the group formed by these alkyl substituents as structural units are preferred. . When a cycloolefin polymer having such a norbornene structure as a structural unit is used, for example, an adhesive layer that has high chemical resistance to photoresist solvents and can be appropriately dissolved and removed by a hydrocarbon solvent can be formed. Adhesive composition. Cycloolefin polymer, can use above-mentioned cycloolefin monomer and other monomers that can be copolymerized with it as monomer unit also can, for example, be preferably with olefin monomer as monomer unit. Olefin monomers include, for example, olefin monomers having 2 to 10 carbon atoms, such as α-olefins such as vinyl, propenyl, 1-butene, isobutene, and 1-hexene. Among them, Preferably vinyl is used as the monomer unit. The olefin monomer may be linear or branched. With respect to the whole monomer component that constitutes cyclic olefin polymer, the ratio of cyclic olefin monomer is preferably more than 10 mol % and below 100 mol %, and is more than 20 mol % and 100 mol % The following are preferred. Also, a polymer having a cycloolefin structure, for example, such as a monomer component formed by a cycloolefin monomer and an olefin monomer, is like a resin obtained by polymerization, which is a resin without a polar group, and This is preferable from the viewpoint of suppressing gas generation at high temperature. [0023] There are no special restrictions on the polymerization method or polymerization conditions when the monomer components are polymerized, and they can be appropriately set according to ordinary methods. [0024] The weight average molecular weight of the cycloolefin polymer is preferably in the range of 10,000 to 2,000,000, more preferably 30,000 to 1,500,000. When the weight-average molecular weight of the polymer having a cycloolefin structure is 10,000 or more, the softening temperature of the polymer can reach a temperature suitable for bonding to glass. When the weight-average molecular weight of the polymer having a cycloolefin structure is 2,000,000 or less, the polymer can have appropriate solubility in cleaning liquid. Commercially available products that can be used as cycloolefin polymers, for example, "TOPAS (trade name)" made by Polyplastics Co., Ltd., "APEL (trade name)" made by Mitsui Chemicals Co., Ltd., ZEON shares in Japan "ZEONOR (trade name)" and "ZEONEX (trade name)" manufactured by a limited company, "ARTON (trade name)" manufactured by JSR Co., Ltd., etc. [0026] (Thermal polymerization inhibitor) In the present invention, the adhesive composition may also contain a thermal polymerization inhibitor. Thermal polymerization inhibitor has the function of preventing free radical polymerization caused by heat or light. Specifically, for example, since thermal polymerization inhibitors are highly reactive to free radicals, they react more preferentially than cycloolefin polymers, thereby hindering the polymerization reaction between cycloolefin polymers. Therefore, when the adhesive layer formed using the cycloolefin polymer is heated, it is possible to prevent the adhesive layer from lowering the solubility of the cleaning solution. [0027] Thermal polymerization inhibitor, as long as it can effectively prevent free radical polymerization caused by heat, there is no special limitation, generally the thermal polymerization inhibitor with phenol is better. In this way, good solubility can be ensured even after high-temperature treatment in the atmosphere. As these thermal polymerization inhibitors, hindered phenol antioxidants can be used, for example, gallic phenol, benzoquinone, hydroquinone, methylene blue, tert-butyl catechol, monobenzyl ether, methyl hydrogen Quinone, Pentaquinone, Amyloxyhydroquinone, n-Butylphenol, Phenol, Hydroquinone Monopropyl Ether, 4,4'-(1-Methylethylene)bis(2-Cresol), 4,4' -(1-methylethylene)bis(2,6-xylenol), 4,4'-[1-[4-(1-(4-hydroxyphenyl)-1-methylethyl) Phenyl]ethylene]bisphenol, 4,4',4"-ethylenetris(2-cresol), 4,4',4"-ethylenetriphenol, 1,1,3-trisphenol (2,5-Dimethyl-4-hydroxyphenyl)-3-phenylpropane, 2,6-di-tert-butyl-4-methylphenol, 2,2'-methylenebis(4- Methyl-6-tert-butylphenol), 4,4'-butylenebis(3-methyl-6-tert-butyrol), 4,4'-thiobis(3-methyl-6-tert -butylphenol), 3,9-bis[2-(3-(3-tert-butyl-4-hydroxy-5-methylphenyl)-propionyloxy)-1,1-dimethylethyl] -2,4,8,10-tetraoxaspiro(5,5)undecane, triethylene glycol-bis-3-(3-tert-butyl-4-hydroxy-5-tolyl)propionate , n-octyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, pentaerythritol tetrakis[3-(3,5-di-tert-butyl-4-hydroxy Phenyl) propionate] (trade name IRGANOX1010, manufactured by BASF Corporation), tris(3,5-di-tert-butylhydroxybenzyl) isocyanurate, thiodiethylenebis[3- (3,5-di-tert-butyl-4-hydroxyphenyl)propionate] and the like. A thermal polymerization inhibitor may be used individually by 1 type, or may use it in combination of 2 or more types. The content of thermal polymerization inhibitor can be matched with the type of cyclic olefin polymer, and the purpose and use environment of the adhesive composition, etc., and can be properly determined. For example, the amount of cyclic olefin polymer is 100 parts by weight , preferably at least 0.1 parts by weight and at most 10 parts by weight. When the content of the thermal polymerization inhibitor is within the above range, it can exert a good effect of inhibiting polymerization, and for the adhesive composition after high temperature process, it can further suppress the decrease of the solubility of the cleaning solution. [Addition of solvent] The thermal polymerization inhibitor is preferably added to the adhesive composition dissolved in the addition of solvent. The solvent to be added is not particularly limited, and an organic solvent in which components contained in the adhesive composition are dissolved can be used. [0030] The organic solvent, for example, can dissolve each component of the adhesive composition to form a uniform solution, and it may use only one organic solvent, or a combination of two or more organic solvents may be used. Specific examples of organic solvents include, for example, terpene solvents having an oxygen atom as a polar group, a carbonyl group, or an acetyloxyl group, etc., for example, vanillyl alcohol (geraniol), nerol (nerol), sorbyl alcohol, etc. Linalool, citral, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol, γ-Terpineol, Terpine-1-ol, Terpine-4-ol, Dihydroterpineol Acetate, 1,4-Cineole, 1,8-Cineole, Borneol ), carvone (Carvone), ionone (Ionone), thujene (thujene), camphor, etc. Another example is lactones such as γ-butyrolactone; ketones such as acetone, methyl ethyl ketone, cyclohexanone (CH), methyl-n-pentanone, methyl isoamyl ketone, and 2-heptanone ; Polyols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol, etc.; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate Compounds with ester linkages such as the above polyols or monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether and other monoalkyl ethers or monophenyl ethers with ether linkages Derivatives of polyalcohols such as knotted compounds (among them, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred); cyclic ethers such as dioxane, Or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxy propionate, ethyl ethoxy propionate, etc. esters; aromatic organic solvents such as anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetole, butylphenyl ether, etc. The content of adding solvent can be adjusted appropriately with the type of thermal polymerization inhibitor, for example, when the total of the dilution solvent (main solvent) and the added solvent of the dissolved resin components is 100 parts by weight, the added solvent The content is preferably not less than 1 part by weight and not more than 50 parts by weight, more preferably not less than 1 part by weight and not more than 30 parts by weight. When the content of the added solvent is within the above range, the thermal polymerization inhibitor can be sufficiently dissolved. (Solvent) The solvent (principal solvent) contained in the adhesive composition of the first embodiment of the present invention should be able to dissolve the cycloolefin polymer, for example, a non-polar hydrocarbon solvent can be used , polar and non-polar petroleum solvents, etc. Preferably, the solution contains alicyclic hydrocarbons or branched hydrocarbons. Among these, when the solvent contains condensed polycyclic hydrocarbons or branched hydrocarbons, it can avoid the whitening of the adhesive composition when it is stored in a liquid state (especially at low temperature), and It can improve the stability of the product, which is better. [0035] Hydrocarbon solvents include, for example, linear, branched or cyclic hydrocarbons. For example, linear hydrocarbons such as hexane, heptane, octane, nonane, methyloctane, decane, undecane, dodecane, tridecane, etc., isooctane, isononane, iso Branched hydrocarbons with carbon numbers from 4 to 15 such as dodecane; p-methane, o-methane, m-methane, diphenylmethane, 1,4-turpentine, 1,8-turpentine, camphane, norcamphor Saturated aliphatic hydrocarbons such as alkanes, pinane (PINANE), thujane (thujane), carane (carane), longifolene (longifolene), α-terpine, β-terpine, γ-terpine, α-pinene, β-pinene, α-thujone, β-thujone, and the like. Petroleum-based solvents are solvents purified from heavy oils, such as white kerosene, paraffin-based solvents, isoparaffin-based solvents, etc., and may also be mixtures of the above-mentioned linear, branched or cyclic hydrocarbons. In addition, petroleum-based solvents may contain aromatic compounds such as benzene and naphthalene, for example. [0037] Also, alicyclic hydrocarbons refer to hydrocarbons containing a ring structure, for example, cyclohexane, cycloheptane, cyclooctane, etc. [0038] Also, alicyclic hydrocarbons include, for example, condensed polycyclic hydrocarbons and the like. Condensed polycyclic hydrocarbons refer to hydrocarbons formed by condensing two or more monocyclic rings with only one side on each ring, and it is preferable to use hydrocarbons formed by condensation of two monocyclic rings. [0039] These hydrocarbons include, for example, a combination of a 5-membered ring and a 6-membered ring, or a combination of two 6-membered rings. Hydrocarbons obtained by combining 5-membered rings and 6-membered rings, such as indene, pentalene, indenane, tetrahydroindene, etc., hydrocarbons obtained by combining two 6-membered rings, such as naphthalene, tetrahydroindene, etc. Hydronaphthalene (Tetralin) and Decalin (Decalin), etc. Again, branched hydrocarbons, for example, outside of the above-mentioned isooctane, isononane, isododecane, etc., and for example, "Isopa (trade name)" made by Exxon Fluor Chemical Co., Ltd. Petroleum-based solvents such as isoparaffins, etc. Again, when solvent is to contain above-mentioned condensed polycyclic hydrocarbon, or when branched hydrocarbon, the contained composition of solvent can be only above-mentioned condensed polycyclic hydrocarbon, or branched hydrocarbon, and for example, can contain saturated fat Other components such as hydrocarbons. Also, it may be a combination of condensed polycyclic hydrocarbons and branched hydrocarbons, for example, may contain other components such as saturated aliphatic hydrocarbons. In this case, the content of condensed polycyclic hydrocarbons or branched hydrocarbons is preferably at least 40 parts by weight, more preferably at least 60 parts by weight, based on 100 parts by weight of the total hydrocarbon solvent. When the content of condensed polycyclic hydrocarbons or branched hydrocarbons is 40 parts by weight or more based on the total hydrocarbon solvent, a high degree of solubility for the above-mentioned resins can be exhibited. When the mixing ratio of condensed polycyclic hydrocarbons or branched hydrocarbons to saturated aliphatic hydrocarbons is within the above range, the odor of condensed polycyclic hydrocarbons or branched hydrocarbons can be alleviated. Also, the content of the solvent in the adhesive composition of the first embodiment of the present invention can be adjusted appropriately with the thickness of the adhesive layer of the film formed by using the adhesive composition, for example, in the adhesive composition When the total amount is 100 parts by weight, it is preferably in the range of not less than 20 parts by weight and not more than 90 parts by weight. When the content of the solvent is within the above range, the viscosity can be easily adjusted. <Adhesive composition (Embodiment 2)> The adhesive composition of the present invention is not limited to the above-mentioned embodiment (Embodiment 1). For example, the adhesive composition of another embodiment (Embodiment 2) can be laminated in the order of the substrate, the adhesive layer, and the support to form the adhesive composition of the above-mentioned adhesive layer, which It is characterized in that, in the above-mentioned bonding layer, the resin component is a cycloolefin polymer having a glass transition temperature of 100°C or higher, and a multifunctional curable monomer, and the multifunctional curable monomer is polymerized to make the above-mentioned When the adhesive layer is cured, the glass transition temperature of the adhesive layer is above 160°C. Possess the adhesive agent composition of above-mentioned constitution, it is the same as the first embodiment, can form and have the high heat resistance required when forming sealing substrate (substrate), and high chemical resistance, and can be easily passed through Adhesive layer for solvent removal. [0045] Also, the adhesive composition of this embodiment contains a solvent and adds a solvent similarly to the adhesive composition of the above-mentioned embodiment (Embodiment 1). Also, the solvent may be any solvent as long as it can dissolve the cycloolefin polymer and the curable monomer, for example, the solvents described in the above (solvent) column can be used. [Resin Component] In the adhesive composition of this embodiment, the resin component contains a cycloolefin polymer with a glass transition temperature of 100° C. or higher and a curable monomer. [0047] As the cycloolefin polymer, a cycloolefin polymer containing the same monomer components as the cycloolefin polymer described in the above embodiment (Embodiment 1) can be used. In addition, in the adhesive composition of this embodiment, the glass transition temperature of the cycloolefin polymer is preferably 100°C or higher, more preferably 120°C or higher, most preferably 140°C or higher. Therefore, like the above-mentioned embodiment (Embodiment 1), a cycloolefin polymer having a glass transition temperature of 160° C. or higher can also be used. When the glass transition temperature of the cycloolefin polymer is above 100°C, polyfunctional hardening monomers can be polymerized in the state of blending with the cycloolefin polymer, and an adhesive with a glass transition temperature of 160°C or above can be properly formed. Floor. (Multifunctional curable monomer) In the adhesive composition of this embodiment, the resin component contains a multifunctional curable monomer that is compatible with the cycloolefin polymer. Therefore, when using a cycloolefin polymer with a glass transition temperature of 100°C or higher, an adhesive layer with a glass transition temperature of 160°C or higher can be formed when the curable monomer is polymerized. The curable monomer is preferably a monomer that can be polymerized by radical polymerization, and specifically, a polyfunctional (meth)acrylate monomer can be mentioned. Above-mentioned polyfunctional (meth) acrylate monomer, for example, ethylene glycol di(meth) acrylate, diethylene glycol di(meth) acrylate, tetraethylene glycol di(methyl) Acrylates, Propylene Glycol Di(meth)acrylate, Polypropylene Glycol Di(meth)acrylate, Butylene Glycol Di(meth)acrylate, Neopentyl Glycol Di(meth)acrylate, 1,6- Hexanediol di(meth)acrylate, 1,4-cyclohexanedimethanol di(meth)acrylate, tricyclodecane dimethanol di(meth)acrylate, 9,9-bis[4 -(2-(Meth)acryloxyethoxy)phenyl] fennel, propoxylated bisphenol A di(meth)acrylate, 1,3-adamantanediol di(meth)acrylic acid Esters, 5-Hydroxy-1,3-adamantanediol di(meth)acrylate, 1,3,5-adamantanetriol tri(meth)acrylate, Trimethylolpropane tri(meth)acrylate Acrylates, Glycerol Di(meth)acrylate, Pentaerythritol Di(meth)acrylate, Pentaerythritol Tri(meth)acrylate, Pentaerythritol Tetra(meth)acrylate, Dipentaerythritol Penta(meth)acrylate , dipentaerythritol hexa(meth)acrylate, 2-hydroxy-3-(meth)acryloxypropyl(meth)acrylate, ethylene glycol diglycidyl ether di(meth)acrylate, di Ethylene glycol diglycidyl ether di(meth)acrylate, diglycidyl phthalate di(meth)acrylate, glycerol tri(meth)acrylate, glycerol polyglycidyl ether poly( Meth) acrylate, urethane (meth) acrylate (ie, cresyl diisocyanate), trimethylhexylene diisocyanate and hexylene diisocyanate with 2-hydroxyethyl ( Reactants of meth)acrylate, etc. These polyfunctional (meth)acrylates may be used alone or in combination of two or more kinds. [0050] The hardening monomer preferably has a ring structure, and preferably has a polycyclic aliphatic structure. Among the curable monomers, when having a cyclic structure, more preferably having a polycyclic aliphatic structure, the compatibility with the cycloolefin polymer can be improved. Also, when the curable monomer compounded in the cycloolefin polymer is polymerized, the heat resistance of the adhesive layer can be further improved. Therefore, among the above-mentioned (meth)acrylate monomers, especially the (meth)acrylate monomers having a cyclic group are preferred, and the tricyclodecane dimethanol di(meth)acrylate , 1,3-adamantanediol di(meth)acrylate, 5-hydroxy-1,3-adamantanediol di(meth)acrylate, 1,3,5-adamantanediol tri(meth)acrylate base) acrylate, 1,4-cyclohexanedimethanol di(meth)acrylate, 9,9-bis[4-(2-(meth)acryloxyethoxy)phenyl] terpene, At least one selected from the group consisting of propoxylated bisphenol A di(meth)acrylate is preferred. Among these, the viewpoint that the monomer which has an adamantane skeleton can improve the heat resistance of an adhesive layer is more preferable. [0052] The content of the curable monomer can be determined after considering the glass transition temperature of the cycloolefin polymer. For example, when the glass transition temperature of the cycloolefin polymer contained as a resin component in the adhesive composition is 100°C or higher, the content of the curable monomer is 10% by weight when the total of the resin components is 100% by weight. It is preferably in the range of more than 40% by weight. When the content of the curable monomer is 10% by weight or more relative to the resin component, higher heat resistance can be imparted to the adhesive layer. In addition, when the content of the curable monomer is 40% by weight or less, the cleaning property when the adhesive layer is removed using a cleaning solution can be improved. In other words, when using a cycloolefin polymer with a glass transition temperature of 100°C or higher, the content of the curable monomer can be kept below 40% by weight. In this way, the cleaning of the adhesive layer caused by the curable monomer can be prevented. phenomenon of reduced sex. Therefore, when a cycloolefin polymer with a higher glass transition temperature is used, the content of hardening monomer can be further reduced. [0053] (Polymerization initiator) The adhesive composition of this embodiment may further contain a polymerization initiator that accelerates the polymerization reaction of the curable monomer. [0054] The polymerization initiator, as long as it can accelerate the polymerization reaction of the hardening monomer, is not particularly limited, and it can use thermal polymerization initiators, photopolymerization initiators, and the like. Thermal polymerization initiators, for example, peroxides, azo-based polymerization initiators, and the like. Peroxides, for example, ketone peroxide, peroxyketal, hydrogen peroxide, dialkyl peroxide, peroxyester etc. Specifically, for example, acetyl peroxide, dicumyl peroxide, tert-butyl peroxide, t-butyl cumyl peroxide, acyl peroxide, benzyl peroxide BPO, 2-Chlorobenzoyl Peroxide, 3-Chlorobenzoyl Peroxide, 4-Chlorobenzoyl Peroxide, 2,4-Dichlorobenzoyl Peroxide, Peroxide 4-bromocresyl oxide, lauryl peroxide, potassium persulfate, diisopropyl peroxycarbonate, tetralin hydroperoxide, 1-phenyl-2-methylpropyl-1-peroxide Hydrogen, tert-butylpertriphenylacetate, tert-butylhydroperoxide, tert-butylperformate, tert-butylperacetate, tert-butylperbenzoate, tert-butylperphenylacetate ester, tert-butyl per-4-methoxyacetate, tert-butyl per-N-(3-methylphenyl)carbamate, etc. Commercially available peroxides, for example, the trade name " cumyl (registered trademark) " of NOF Co., Ltd., trade name " perbutyl (registered trade mark) ", trade name " oil peroxide Ester (registered trademark)", and the trade name "octyl ester (registered trademark)", etc. Azo-based polymerization initiators, for example, 2,2'-azobispropane, 2,2'-dichloro-2,2'-azobispropane, 1,1'-azobispropane ethyl) diacetate, 2,2'-azobis(2-aminodiketone (amidino) propane) hydrochloride, 2,2'-azobis(2-aminopropane) nitrate, 2,2'-Azobisisobutane, 2,2'-Azobisisobutylamide, 2,2'-Azobisisobutyronitrile, 2,2'-Azobis-2-methane methyl propionate, 2,2'-dichloro-2,2'-azobisbutane, 2,2'-azobis-2-methylbutyronitrile, 2,2'-azobisiso Dimethyl butyrate, 1,1'-azobis(1-methylbutyronitrile-3-sodium sulfonate), 2-(4-tolyl azo)-2-methylmalonyl dinitrile 4,4'-Azobis-4-cyanovaleric acid, 3,5-dihydroxytolylazo-2-allylmalonyl dinitrile, 2,2'-Azobis-2- Methylvaleronitrile, Dimethyl 4,4'-Azobis-4-cyanovalerate, 2,2'-Azobis-2,4-Dimethylvaleronitrile, 1,1'-Azo Bicyclohexanenitrile, 2,2'-azobis-2-propylbutyronitrile, 1,1'-azobiscyclohexanenitrile, 2,2'-azobis-2-propylbutyronitrile, 1 ,1'-Azobis-1-chlorophenylethane, 1,1'-Azobis-1-cyclohexanecarbonitrile, 1,1'-Azobis-1-cycloheptanecarbonitrile, 1 ,1'-Azobis-1-phenylethane, 1,1'-azobiscumene, 4-nitrophenylazobenzyl cyanoacetate, phenylazodiphenylmethane , phenylazotriphenylmethane, 4-nitrophenylazotriphenylmethane, 1,1'-azobis-1,2-diphenylethane, poly(bisphenol A-4,4 '-azobis-4-cyanopentanoate), poly(tetraethylene glycol-2,2'-azobisisobutyrate), etc. (Photopolymerization initiator) The photopolymerization initiator specifically includes, for example, 1-hydroxycyclohexylphenone, 2-hydroxy-2-methyl-1-phenylpropane-1-one , 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 1-(4-isopropylphenyl)-2-hydroxy- 2-methylpropan-1-one, 1-(4-dodecylphenyl)-2-hydroxy-2-methylpropan-1-one, 2,2-dimethoxy-1,2-di Phenylethane-1-one, bis(4-dimethylaminophenyl)one, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropane-1- Ketone, 2-benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butane-1-one, ethyl ketone 1-[9-ethyl-6-(2-toluene Acyl)-9H-carbazol-3-yl]-1-(o-acetyl oxime), 2,4,6-tricresyl diphenylphosphine (phosphine) oxide, 4-benzene Formyl-4'-methyl dimethyl sulfide, 4-dimethylaminobenzoic acid, 4-dimethylaminobenzoic acid methyl ester, 4-dimethylaminobenzoic acid ethyl ester, 4-dimethylamine Butyl benzoate, 4-dimethylamino-2-ethylhexyl benzoic acid, 4-dimethylamino-2-isoamyl benzoic acid, benzyl-β-methoxyethyl acetal, benzyl Dimethyl ketal, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, o-benzoylbenzoic acid methyl ester, 2,4-diethyl 9 -Oxysulfur

, 2-chloro 9-oxysulfur

, 2,4-Dimethyl 9-oxosulfur

, 1-Chloro-4-propoxy 9-oxosulfur

,sulfur

, 2-chlorosulfur

, 2,4-Diethylsulfur

, 2-Methylsulfur

, 2-isopropyl sulfide

, 2-ethylanthraquinone, octylmethylanthraquinone, 1,2-benzoanthraquinone, 2,3-diphenylanthraquinone, azobisisobutyronitrile, benzoyl peroxide, cumene peroxide , 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, 2-mercaptobenzothiazole, 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer , 2-(o-chlorophenyl)-4,5-bis(methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2 -(o-methoxyphenyl)-4,5-diphenylimidazole dimer, 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer, 2,4,5 -triaryl imidazole dimer, benzophenone, 2-chlorobenzophenone, 4,4'-bisdimethylaminobenzophenone (ie, Michler's ketone), 4,4' - bis-diethylaminobenzophenone (i.e., ethyl Miller's (Michler's) ketone), 4,4'-dichlorobenzophenone, 3,3-dimethyl-4-methoxydiphenyl Methyl ketone, benzyl ester, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin-n-butyl ether, benzoin isobutyl ether, benzoin-t-butyl ether, acetophenone, 2,2-diethoxy Acetophenone, p-dimethylacetophenone, p-dimethylaminoacetophenone, dichloroacetophenone, trichloroacetophenone, p-t-butylacetophenone, p-dimethylaminoacetophenone, p-t -Butyltrichloroacetophenone, p-t-butyldichloroacetophenone, α,α-dichloro-4-phenoxyacetophenone, 9-oxosulfur

, 2-methyl 9-oxosulfur

, 2-isopropyl 9-oxosulfur

, dibenzocycloheptanone, pentyl-4-dimethylaminobenzoate, 9-phenylacridine, 1,7-bis-(9-acridyl)heptane, 1,5-bis- (9-acridyl)pentane, 1,3-bis-(9-acridyl)propane, p-methoxytri

, 2,4,6-tri(trichloromethyl)-s-tri

, 2-methyl-4,6-bis(trichloromethyl)-s-tri

, 2-[2-(5-methylfuran-2-yl)ethenyl (ethenyl)]-4,6-bis(trichloromethyl)-s-three

, 2-[2-(furan-2-yl)vinyl]-4,6-bis(trichloromethyl)-s-three

, 2-[2-(4-diethylamino-2-methylphenyl)vinyl]-4,6-bis(trichloromethyl)-s-three

, 2-[2-(3,4-dimethoxyphenyl) vinyl]-4,6-bis(trichloromethyl)-s-three

, 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-s-three

, 2-(4-ethoxystyryl)-4,6-bis(trichloromethyl)-s-tri

, 2-(4-n-butoxyphenyl)-4,6-bis(trichloromethyl)-s-tri

, 2,4-bis-trichloromethyl-6-(3-bromo-4-methoxy)phenyl-s-tri

, 2,4-bis-trichloromethyl-6-(2-bromo-4-methoxy)phenyl-s-tri

, 2,4-bis-trichloromethyl-6-(3-bromo-4-methoxy)styrenephenyl-s-tri

and 2,4-bis-trichloromethyl-6-(2-bromo-4-methoxy)styrenephenyl-s-tri

Wait. Also, as the photopolymerization initiator, commercially available "IRGACURE OXE02", "IRGACURE OXE01", "IRGACURE 369", "IRGACURE 651" and "IRGACURE 907" (trade names: any of them are from BASF Co. manufactured) and "NCI-831" (trade name: manufactured by ADEKA Corporation), etc. [0059] Furthermore, the amount of the polymerization initiator added can be adjusted in accordance with the content of the hardening monomer contained in the adhesive composition. Also, generally, the ratio of the polymerization initiator is preferably not less than 0.1 part by weight and not more than 10 parts by weight, more preferably not less than 0.5 parts by weight and not more than 5 parts by weight, based on 100 parts by weight of the curable monomer. [0060] The polymerization initiator can be added to the adhesive composition by a known method before using the adhesive composition. In addition, the polymerization initiator may be diluted in the organic solvent described in the above (addition of solvent) column, and then added to the adhesive composition. In addition, in the adhesive composition of the present embodiment, a thermal polymerization inhibitor may be added to the added solvent. [0061] <Adhesive film> The adhesive film in one embodiment of the present invention (Embodiment 3) is to form an adhesive layer formed of the adhesive composition of one embodiment of the present invention on the film. When using these adhesive films, an appropriate adhesive layer can be formed on a support body. Therefore, an adhesive film formed using the adhesive composition of one embodiment of the present invention is also included in the scope of the present invention. The method for forming the adhesive layer on the film can be adapted to the expected film thickness or uniformity of the adhesive layer, etc., and a known method can be used appropriately. The dry film thickness of the adhesive layer on the film is 10 to 1,000 The method of μm, the method of coating the adhesive composition, etc. [0063] When these adhesive films are used, compared with the situation in which the adhesive composition is directly coated on the support to form an adhesive layer, an adhesive layer with good film thickness uniformity and surface smoothness can be formed. The film used when making the following film, as long as the following layer of the film can be peeled off by the film, and the following layer can be transferred to the release film on the treated surface of the support body etc., without There are special restrictions. For example, flexible films formed of synthetic resin films such as polyethylene terephthalate, polyvinyl ester, polypropylene ester, polycarbonate, and polyvinyl chloride with a film thickness of 15 to 125 μm. The above-mentioned film is preferably subjected to a release treatment for easy transfer, if necessary. [0065] Also, the adhesive film can be protected by covering the exposed surface of the adhesive layer with a protective film. The composition of the protective film is not limited as long as it can be peeled from the adhesive layer. For example, polyethylene terephthalate film, polypropylene film, and polyethylene film are preferable. In addition, each protective film is preferably coated with polysiloxane or subjected to baking treatment for the purpose of easy peeling from the adhesive layer. Then the using method of film is not particularly limited, for example, the situation of using protective film, for after peeling off, overlap on the adhesive layer exposed on the support body, and use heating roller on film (form adhesive layer) The method of moving the inner surface of the surface of the agent layer, the method of thermally pressing the adhesive layer on the surface of the support body, etc. [0067] Also, the protective film peeled off from the adhesive film can be wound up into a cylindrical shape and preserved by using a roll such as a roll that is wound up sequentially, and can be reused. [Laminated body] The laminated body is formed by applying the adhesive composition of one embodiment of the present invention on a support to form a laminate having high heat resistance, high chemical resistance, and high detergency. Next layer. In the laminated body, a sealed body obtained by sealing elements with a sealing material is formed on the adhesive layer, and a sealed substrate having a rewiring layer is provided on one side of the flat portion of the sealed body. That is, the laminated body is a laminated body produced in the process of manufacturing the sealing substrate based on the spreading technology in which the terminals provided on the element are extended to the wafer area and actually connected to the rewiring layer. [0069] [Sealing Substrate] The sealing substrate (substrate) is a sealing body that has components, a rewiring layer that actually connects components, and seals components. The sealing substrate preferably has a plurality of components, and a plurality of electronic components can be produced by cutting the sealing substrate. [0070] (Redistribution layer) The redistribution layer, also known as RDL (Redistribution Layer: redistribution layer), is a wiring body with a thin film that constitutes the wiring of the connecting element, and can have a single-layer or multiple-layer structure. In one embodiment, the redistribution layer is made of a dielectric (for example, silicon oxide (SiO_x ), photosensitive resins such as photosensitive epoxy, etc.), wiring of conductors (such as metals such as aluminum, copper, titanium, nickel, gold, silver, and alloys such as silver-tin alloys) are formed, but It is not limited to this. [0071] (Component) A component (bare chip (Bare chip)) is a semiconductor component or other component, which may have a single-layer or multiple-layer structure. Also, when the element is a semiconductor element, the electronic component obtained by dicing the sealing substrate can be used as a semiconductor device. [0072] (Sealing material) As the sealing material, for example, a sealing material containing epoxy-based resin and polysiloxane-based resin can be used. It is preferable that the sealing material is not provided on each element, but is integrally sealed to all the plurality of elements actually mounted on the rewiring layer. [0073] [Support body] The support body can be used as long as it has the necessary strength to prevent damage or deformation of the constituent elements of the sealing substrate when forming the sealing substrate. Also, the support can be formed using a material having a wavelength of light that can pass through and degenerate the separation layer formed on the support. [0074] The material of the support body, for example, can use glass, silicon, and acrylic resin, but is not limited to these components. As the shape of the support, for example, supports such as rectangles and circles can be used, but are not limited thereto. [0075] [Adhesive layer] The adhesive layer is formed of the adhesive composition according to one embodiment of the present invention, and is a layer for fixing the sealing substrate to the support. On the surface of the next layer, elements that can be sealed via a sealing material can be arranged. In addition, the surface of the adhesive layer can be directly coated with, for example, photoresist, etc., and subjected to exposure treatment to form patterns such as photosensitive insulating films. Moreover, the adhesive layer also has the function of protecting the separation layer. The thickness of following layer can cooperate with the kind of support body and sealing substrate, and the processing that is implemented when forming sealing substrate etc. can be set appropriately, generally with more than 0.1 μm, below 50 μm is good, with more than 1 μm, 10 μm or less is preferable. When it is 1 μm or more, the sealing substrate can be properly fixed to the support. When it is 10 μm or less, the adhesive layer can be easily removed in a subsequent step. [0077] [Separation layer] The separation layer is a layer that undergoes deterioration by light irradiation. The light irradiates the separation layer through the support body, and as a result of deteriorating the separation layer, the support body can be separated from the sealing substrate. [0078] Also, in this specification, the separation layer "degenerates" refers to a state in which the separation layer is destroyed by a slight external force, or a phenomenon in which the adhesive force of the layer in contact with the separation layer is reduced. As a result of the deterioration of the separation layer produced by absorbing light, the separation layer loses its strength or adhesiveness before being irradiated with light. That is, as a result of absorbing light, the separation layer becomes embrittled. The modification of the separation layer means that the separation layer is decomposed by the energy of the absorbed light, the three-dimensional configuration is changed, or the functional group is dissociated. The deterioration of the separation layer is produced as a result of the absorption of light. [0079] Therefore, for example, it is possible to simply separate the support plate from the substrate by simply lifting the support plate so that the separation layer is destroyed. More specifically, for example, one of the substrate and the support plate in the laminate can be fixed on the mounting table using a support separating device, etc. The other is to lift it up to separate the support plate from the substrate, or use a separation plate equipped with clamps (claws) to clamp the slope at the end of the peripheral portion of the support plate, and then apply force to make the substrate It can be separated from the support plate, etc. Also, for example, the support plate may be peeled from the substrate in the laminate using a support separating device provided with a peeling means for supplying a peeling liquid of a peelable adhesive. It is to supply the peeling liquid to at least a part of the peripheral end of the adhesive layer in the laminate through the peeling means, so that the adhesive layer in the laminate is swelled, and when the adhesive layer swells, the force is concentrated on the separation. In the way of layers, force is applied to the substrate and support plate. Thus, the substrate can be properly separated from the support plate. The power applied to the laminated body can be appropriately adjusted in accordance with the size of the laminated body, without any limitation. For example, when it is a laminated body with a diameter of about 300mm, by applying a power of about 0.1 to 5kgf, The substrate and the support plate can be properly separated. [0081] The thickness of the separation layer, for example, is preferably in the range of 0.05 μm or more and 50 μm or less, more preferably in the range of 0.3 μm or more and 1 μm or less. When the thickness of the separation layer is concentrated in the range of 0.05 μm or more and 50 μm or less, the expected deterioration of the separation layer will occur through short-time light irradiation and low-energy light irradiation. Also, the thickness of the separation layer is particularly preferably in the range of 1 μm or less from the viewpoint of productivity. [0082] Furthermore, other layers can be formed between the separation layer and the support body. In this case, other layers can be made of light-transmitting materials. In this way, it is possible to appropriately add a layer having excellent properties without hindering light from entering the separation layer. Depending on the type of material constituting the separation layer, the wavelength of light that can be used is also different. Therefore, the material constituting the other layer does not need to be a material that can pass through all light, but can be appropriately selected from materials that can pass through light that can degrade the material constituting the separation layer. Also, the separation layer can be formed only by a material with a light-absorbing structure. It can also be added without damaging the essential characteristics of the present invention to form a separation layer. . In addition, it is preferable that the surface of the separation layer opposite to the adhesive layer is flat (no unevenness is formed), so that the separation layer can be easily formed, and uniform adhesion can also be achieved in the adhesion process. [0084] (fluorocarbon) The separation layer may be formed of fluorocarbon. If the separation layer is made of fluorinated carbon, it may be deteriorated by absorbing light, and as a result, it will lose its strength or adhesiveness before being irradiated with light. Therefore, it is only necessary to apply a little external force (for example, lifting the support body, etc.) to destroy the separation layer and easily separate the support body from the sealing substrate. The carbon fluoride constituting the separation layer can be suitably formed into a film by plasma CVD (Chemical Vapor Deposition). [0085] Fluorocarbons, depending on their type, will absorb a specific range of wavelengths. When the separation layer is irradiated with light having a wavelength in a range capable of absorbing the carbon fluoride used in the separation layer, the carbon fluoride can be appropriately denatured. Also, the light absorption rate in the separation layer is preferably 80% or more. [0086] The light that irradiates the separation layer can match the wavelength of carbon fluoride absorption, for example, YAG laser, ruby laser, glass laser, YVO can be used appropriately₄ Solid lasers such as lasers, LD lasers, and fiber lasers, liquid lasers such as pigment lasers, CO₂ Gas lasers such as lasers, excimer lasers, Ar lasers, and He-Ne lasers, laser lights such as semiconductor lasers, and free electron lasers, or non-laser lights. The wavelength for denaturing fluorocarbons is not particularly limited, for example, wavelengths in the range of 600 nm or less can be used. [0087] (The repeating unit contains a polymer having a light-absorbing structure) In the separation layer, the repeating unit may contain a polymer having a light-absorbing structure. The polymer can be deteriorated by exposure to light. The deterioration of the polymer can be caused by absorbing the irradiated light through the above-mentioned structure. The separation layer, through the deterioration of the polymer, will lose its strength or adhesiveness before being exposed to light. Therefore, only by applying a little external force (for example, raising the support body, etc.), the separation layer can be destroyed, and the support body and the sealing substrate can be easily separated. [0088] The above-mentioned structure with light absorption is a chemical structure that can cause the polymer containing the structure of the repeating unit to undergo deterioration when light is absorbed. The structure is, for example, an atomic group containing a conjugated π-electron system formed by a substituted or unsubstituted benzene ring, a condensed ring, or a heterocyclic ring. More specifically, the structure may be an arbor structure, or a benzophenone structure, a diphenylene structure, a diphenylene structure (biphenylene structure), or Diphenyl structure or diphenylamine structure, etc. When the above-mentioned structure exists in the side chain of the above-mentioned polymer, the structure can be represented by the following formula. [0090]

(In the formula, R each independently represents an alkyl group, an aryl group, a halogen group, a hydroxyl group, a keto group, an arylene group, an aroxyl group or N(R⁴ )(R⁵ ) (where R⁴ and R⁵ Each independently represents a hydrogen atom or an alkyl group with 1 to 5 carbons), Z may not exist, or represent -CO-, -SO₂ -, -SO- or -NH-, n is 0 or an integer of 1 to 5). Also, the above-mentioned polymer, for example, may contain the following formula in the main chain: the repeating unit represented by any one of (a) to (d), the structure represented by (e), or (f) . [0091]

(In the formula, l is an integer of 1 or more, m is 0 or an integer of 1 to 2, X is any one of the formulas shown in the above "Chemical 1" in (a) to (e), (f ) in any one of the formulas shown in the above "Chemical 1", or nonexistent, Y₁ and Y₂ Each independently represents -CO- or SO₂ -. l is preferably an integer of 10 or less). Examples of the benzene ring, condensed ring, and heterocycle represented by the above "Chemical 1" include, for example, phenyl, substituted phenyl, benzyl, substituted benzyl, naphthalene, substituted naphthalene, anthracene, substituted anthracene, anthraquinone, Substituted anthraquinone, acridine, substituted acridine, azobenzene, substituted azobenzene, fluorime, substituted fluorime, fluorone, substituted fluorone, Carbazole, substituted carbazole, N-alkylcarbazole, dibenzofuran, substituted dibenzofuran, phenanthrene, substituted phenanthrene, pyrene and substituted pyrene, etc. If the exemplified substituents have further substituents, the substituents, for example, can be composed of alkyl groups, aryl groups, halogen atoms, alkoxy groups, nitro groups, aldehydes, cyano groups, amide groups, dialkylamino groups, sulfonyl groups, etc. Amine, imide, carboxylic acid, carboxylic acid ester, sulfonic acid, sulfonic acid ester, alkylamino group and arylamino group. Among the substituents shown in the above-mentioned "Chemical 1", in the No. 5 substituent with 2 phenyl groups, Z is -SO₂ For example, bis(2,4-dihydroxyphenyl)pyridine, bis(3,4-dihydroxyphenyl)pyridine, bis(3,5-dihydroxyphenyl)pyridine, bis( 3,6-dihydroxyphenyl)threonium, bis(4-hydroxyphenyl)threonium, bis(3-hydroxyphenyl)threonium, bis(2-hydroxyphenyl)threonium, and bis(3,5-dimethyl Base -4-hydroxyphenyl) 碸 and so on. Among the substituents shown in the above-mentioned "Chemical 1", in the substituent No. 5 with 2 phenyl groups, the example when Z is -SO- can be enumerated such as bis(2,3-dihydroxybenzene base) phenylene, bis(5-chloro-2,3-dihydroxyphenyl) phenylene, bis(2,4-dihydroxyphenyl) phenylene, bis(2,4-dihydroxy-6-tolyl) ) phenylene, bis(5-chloro-2,4-dihydroxyphenyl) phenylene, bis(2,5-dihydroxyphenyl) phenylene, bis(3,4-dihydroxyphenyl) phenylene, Bis(3,5-dihydroxyphenyl)phenylene, bis(2,3,4-trihydroxyphenyl)phenylene, bis(2,3,4-trihydroxy-6-methylphenyl)-pyridine, Bis(5-chloro-2,3,4-trihydroxyphenyl)phenylene, bis(2,4,6-trihydroxyphenyl)phenylene, bis(5-chloro-2,4,6-trihydroxy Phenyl) phenylene, etc. Among the substituents shown in the above-mentioned "Chemical 1", in the substituent No. 5 with 2 phenyl groups, the example when Z is -C(=O)- can be enumerated such as, 2,4-di Hydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2,2',5,6'-tetrahydroxydiphenyl Methanone, 2-Hydroxy-4-methoxybenzophenone, 2-Hydroxy-4-octyloxybenzophenone, 2-Hydroxy-4-dodecyloxybenzophenone, 2,2' -Dihydroxy-4-methoxybenzophenone, 2,6-dihydroxy-4-methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxydiphenyl Methanone, 4-amino-2'-hydroxybenzophenone, 4-dimethylamino-2'-hydroxybenzophenone, 4-diethylamino-2'-hydroxybenzophenone, 4 -Dimethylamino-4'-methoxy-2'-hydroxybenzophenone, 4-dimethylamino-2',4'-dihydroxybenzophenone, and 4-dimethylamino- 3',4'-dihydroxybenzophenone, etc. When the above-mentioned structure exists in the side chain of the above-mentioned polymer, the proportion of the above-mentioned polymer in the repeating unit containing the above-mentioned structure is to make the light transmittance of the separation layer more than 0.001% and less than 10%. Inside. This ratio concentrates on the polymer produced in these ranges, the separation layer can absorb light sufficiently, and can degenerate reliably and quickly. That is, the support body can be easily removed from the sealing substrate, and the light irradiation time required for the removal process can be shortened. [0096] The above-mentioned structure, depending on its type selection, can absorb light with wavelengths in the expected range. For example, the wavelength of light that can be absorbed by the above-mentioned structure is preferably in the range of not less than 100 nm and not more than 2,000 nm. Within this range, the wavelength of light that the above-mentioned structure can absorb may be on the shorter wavelength side, for example, within the range of not less than 100 nm and not more than 500 nm. For example, the above-mentioned structure is preferably capable of deteriorating a polymer containing the structure by absorbing ultraviolet light having a wavelength in the range of approximately 300 nm to 370 nm. The light that can be absorbed by the above structure, for example, high pressure mercury lamp (wavelength: more than 254nm, below 436nm), KrF excimer laser (wavelength: 248nm), ArF excimer laser (wavelength: 193nm), F2 excimer Laser (wavelength: 157nm), XeCl laser (wavelength: 308nm), XeF laser (wavelength: 351nm) or solid UV laser (wavelength: 355nm), or g-line (wavelength: 436nm), h line (wavelength: 405nm) or i-line (wavelength: 365nm), etc. [0098] The above-mentioned separation layer may contain a polymer containing the above-mentioned structure as a repeating unit, and the separation layer may further contain components other than the above-mentioned polymer. The components include, for example, fillers, plasticizers, and components that improve the peelability of the support. These components can be appropriately selected from conventionally known substances or materials as long as they do not prevent or promote light absorption through the above-mentioned structure and deterioration of the polymer. [0099] (inorganic substances) The separation layer can be formed of inorganic substances. Since the separation layer is composed of inorganic substances, it will deteriorate after absorbing light, and as a result, it will lose its strength or adhesiveness before being exposed to light. Therefore, when only a little external force is applied (for example, raising the support body 1, etc.), the separation layer is destroyed, and the support body and the sealing substrate are easily separated. [0100] The above-mentioned inorganic substances may be modified by absorbing light. For example, one or more inorganic substances selected from the group consisting of metals, metal compounds and carbon can be suitably used. Metal compounds refer to compounds containing metal atoms, for example, metal oxides, metal nitrides, etc. Examples of these inorganic substances are not limited to the following substances, but examples include gold, silver, copper, iron, nickel, aluminum, titanium, chromium, SiO₂ , SiN, Si₃ N₄ , TiN, and one or more inorganic substances selected from the group consisting of carbon. Also, carbon is a concept including isotopes of carbon, for example, graphite, fullerene, graphitic carbon, carbon nano sleeve, and the like. [0101] The above-mentioned inorganic substances can absorb light having a specific range of wavelengths depending on their type. When the separation layer is irradiated with light having a wavelength in the absorption range of the inorganic substance used in the separation layer, the above-mentioned inorganic substance can be appropriately modified. The light that irradiates the separation layer formed by inorganic matter can match the absorbable wavelength of the above-mentioned inorganic matter, for example, YAG laser, ruby laser, glass laser, YVO can be used appropriately₄ Solid lasers such as lasers, LD lasers, and fiber lasers, liquid lasers such as pigment lasers, CO₂ Gas lasers such as lasers, excimer lasers, Ar lasers, and He-Ne lasers, laser light such as semiconductor lasers, and free electron lasers, or non-laser light. [0103] The separation layer formed by inorganic substances can be formed on the support body by using known techniques such as sputtering, chemical vapor deposition (CVD), electroplating, plasma CVD, and spin coating, for example. The thickness of the separation layer formed by inorganic substances is not particularly limited, as long as it has a film thickness that can sufficiently absorb the light used, for example, a film thickness in the range of 0.05 μm or more and 10 μm or less is preferred. . Also, for example, an adhesive agent may be coated on both sides or one side of an inorganic film (for example, a metal film) formed of an inorganic substance constituting the separation layer in advance, and then attached to a support. [0104] Also, when using a metal film as a separation layer, the reflection of the laser or the static electricity of the film will be caused due to the film quality of the separation layer, the type of laser light source, the laser output and other conditions. Therefore, an antireflection film or an antistatic film may be provided on the top, bottom, or either side of the separation layer as a countermeasure against these situations. [0105] (Compound with an infrared-absorbing structure) The separation layer can be formed by a compound having an infrared-absorbing structure. This compound can be denatured by absorbing infrared rays. The separation layer, through the deterioration of the compound, will lose its strength or adhesiveness before being irradiated by infrared rays. Therefore, when only a little external force is applied (for example, raising the support body, etc.), the separation layer can be broken, and the support body and the sealing substrate can be easily separated. Have infrared-absorbing structure, or contain the compound of infrared-absorbing structure, for example, alkane, alkene (vinyl, trans, cis, vinylidene, trisubstituted, tetrasubstituted, conjugated, alkene, ring formula), alkynes (monosubstituted, disubstituted), monocyclic aromatics (benzene, monosubstituted, disubstituted, trisubstituted), alcohols and phenols (free OH, intramolecular hydrogen bonding, intermolecular hydrogen bonding , saturated secondary, saturated tertiary, unsaturated secondary, unsaturated tertiary), acetal, ketal, aliphatic ether, aromatic ether, vinyl ether, epoxy ring ether, peroxide ether, ketone, di Alkyl carbonyl esters, aromatic carbonyl esters, enols of 1,3-diketones (Enol), o-hydroxyaryl ketones, dialkyl aldehydes, aromatic aldehydes, carboxylic acids (dimers, carboxylic acid anions), Formate, acetate, conjugated ester, non-conjugated ester, aromatic ester, lactone (β-, γ-, δ-), aliphatic acid chloride, aromatic acid chloride, acid anhydride (conjugated , non-conjugated, cyclic, non-cyclic), primary amide, secondary amide, lactam, primary amine (aliphatic, aromatic), secondary amine (aliphatic, aromatic), tertiary amine (aliphatic, aromatic), primary amine salt, secondary amine salt, tertiary amine salt, ammonium ion, aliphatic nitrile, aromatic nitrile, carbodiimide, aliphatic isonitrile, aromatic isonitrile, isocyanate , thiocyanate, aliphatic isothiocyanate, aromatic isothiocyanate, aliphatic nitro compounds, aromatic nitro compounds, nitroamines, nitrosamines, nitrates, nitrites , nitroso bonds (aliphatic, aromatic, monomer, dimer), sulfur compounds such as mercaptans, thiophenols, and thiol acids, thiocarbonyl esters, sulfones, sulfonyl chlorides, sulfonyl chlorides, Primary sulfonamide, secondary sulfonamide, sulfate ester, carbon-halogen bond, Si-A¹ bond (A¹ is H, C, O or halogen), P-A² bond (A² is H, C or O), or a Ti-O bond. Containing the structure of above-mentioned carbon-halogen bond, for example, -CH₂ Cl, -CH₂ Br, -CH₂ I, -CF₂ -, -CF₃ 、-CH=CF₂ 、-CF=CF₂ , fluorinated aryl, and chlorinated aryl, etc. Contain above-mentioned Si-A¹ Bonding structure, e.g. SiH, SiH₂ 、SiH₃ 、Si-CH₃ 、Si-CH₂ -, Si-C₆ h₅ , SiO-aliphatic, Si-OCH₃ 、Si-OCH₂ CH₃ 、Si-OC₆ h₅ , Si-O-Si, Si-OH, SiF, SiF₂ , and SiF₃ Wait. Contains Si-A¹ The bonding structure, especially the formation of a siloxane skeleton and a silsesquioxane skeleton, is preferable. Contain above-mentioned P-A² Bonding configuration, e.g. PH, PH₂ , P-CH₃ , P-CH₂ -, P-C₆ h₅ 、A³ ₃ -P-O(A³ is aliphatic or aromatic), (A⁴ O)₃ -P-O(A⁴ is alkyl), P-OCH₃ , P-OCH₂ CH₃ , P-OC₆ h₅ , P-O-P, P-OH, and O=P-OH, etc. [0110] The above structure, depending on its type selection, can absorb infrared rays with wavelengths in the expected range. Specifically, for example, the wavelength of infrared rays that can be absorbed by the above-mentioned structure is, for example, within the range of 1 μm to 20 μm, and is more suitable for absorption within the range of 2 μm to 15 μm. In addition, when the above-mentioned structure is Si—O bonding, Si—C bonding, and Ti—O bonding, it may be within the range of 9 μm or more and 11 μm or less. In addition, the wavelengths of infrared rays that can be absorbed by each structure are those that can be easily understood by those in the industry. For example, for the absorption bands in each structure, refer to the non-patent literature: SILVERSTEIN·BASSLER·MORRILL "Determination Method Using Spectra of Organic Compounds (5th Edition) - Combined Use of MS, IR, NMR, and UV-" (published in 1992 ) on pages 146 to 151. The compound with the structure of infrared absorption used to form the separation layer, as long as it is among the compounds with the above structure, is soluble in a solvent for the purpose of coating and can be cured to form a solid layer. There is no special limit. However, from the standpoint of effectively degrading the compound in the separation layer and easily separating the support from the sealing substrate, the greater the infrared absorption in the separation layer, that is, the lower the infrared transmittance when the separation layer is irradiated with infrared rays. Whichever is better. Specifically, for example, the infrared transmittance in the separation layer is preferably less than 90%, and the infrared transmittance is preferably less than 80%. When illustrating, the compound with siloxane skeleton, for example, can use the resin of the repeating unit represented by the following chemical formula (1) and the repeating unit of the repeating unit represented by the following chemical formula (2), or A resin of a copolymer of a repeating unit represented by the following chemical formula (1) and a repeating unit produced by an acrylic compound. [0113]

(In chemical formula (2), R⁶ hydrogen, an alkyl group having 10 or less carbon atoms, or an alkoxy group having 10 or less carbon atoms). Among them, the compound having a siloxane skeleton is t-butadiene styrene (TBST)-dimethylsiloxane, which is a copolymer of the repeating unit represented by the above chemical formula (1) and the repeating unit represented by the following chemical formula (3). An oxane copolymer is preferred, and a TBST-dimethylsiloxane copolymer containing the repeating unit represented by the above chemical formula (2) and the repeating unit represented by the following chemical formula (3) at a ratio of 1:1 is more preferable . [0114]

In addition, as the compound having a silsesquioxane skeleton, for example, a resin of a copolymer of a repeating unit represented by the following chemical formula (4) and a repeating unit represented by the following chemical formula (5) can also be used. [0115]

(In chemical formula (4), R⁷ is hydrogen or an alkyl group with a carbon number of 1 to 10, in chemical formula (5), R⁸ an alkyl group with a carbon number of 1 to 10, or a phenyl group). Compounds having a silsesquioxane skeleton, in addition to the above, can also be suitably used in JP-A No. 2007-258663 (published on October 4, 2007), JP-A No. 2010-120901 (published on June 3, 2010) The silsesquioxane resins disclosed in JP-A-2009-263316 (published on November 12, 2009), and JP-A-2009-263596 (published on November 12, 2009). Wherein, the compound with silsesquioxane skeleton is preferably the copolymer of the repeating unit represented by the following chemical formula (6) and the repeating unit represented by the following chemical formula (7), to contain 7:3 A copolymer of a repeating unit represented by the following chemical formula (6) and a repeating unit represented by the following chemical formula (7) is more preferable. [0117]

The polymer having a silsesquioxane skeleton can have a random structure, a ladder structure, a cage structure, etc., or any structure. Also, compounds containing Ti-O bonds, for example, (i) tetra-i-propoxytitanium, tetra-n-butoxytitanium, tetrakis(2-ethylhexyloxy)titanium, and Titanium alkoxides such as titanium-i-propoxyoctyl glycolate; (ii) di-i-propoxy bis(acetylacetonate)titanium, and bis(ethylacetone acetate)propane Titanium chelates such as titanium dioxide; (iii)i-C₃ h₇ O-[-Ti(O-i-C₃ h₇ )₂ -O-]_no -i-C₃ h₇ , and n-C₄ h₉ O-[-Ti(O-n-C₄ h₉ )₂ -O-]_no -n-C₄ h₉ Titanium polymers such as; (iv) tri-n-butoxytitanium monostearate, titanium stearate, di-i-propoxytitanium diisostearate, and (2-n-butoxy (v) Water-soluble titanium compounds such as di-n-butoxy bis(aminato)titanium, etc. [0119] Among them, the compound containing Ti-O bond, and di-n-butoxy bis(triethanolamine root)titanium (Ti(OC₄ h₉ )₂ [OC₂ h₄ N(C₂ h₄ Oh)₂ ]₂ ) is preferred. [0120] The above-mentioned separation layer is a compound containing an infrared-absorbing structure, but the separation layer may further contain components other than the above-mentioned compounds. The components include, for example, fillers, plasticizers, and components that improve the peelability of the support. These components can be appropriately selected from conventionally known substances or materials as long as they do not prevent or promote infrared absorption through the above-mentioned structure or deterioration of the compound. [0121] (infrared absorbing substance) The separation layer may contain an infrared absorbing substance. When the separation layer contains an infrared-absorbing substance, it may undergo deterioration by absorbing light, and as a result, it will lose its strength or adhesiveness before being irradiated with light. Therefore, when only a little external force is applied (for example, raising the support body, etc.), the separation layer will be destroyed, so that the support body and the sealing substrate are easily separated. [0122] The infrared-absorbing material only needs to have a constitution that changes the quality by absorbing infrared rays. For example, carbon black, iron particles, or aluminum particles can be suitably used. Infrared-absorbing substances can absorb light with a specific range of wavelengths depending on their type. When the separation layer having a wavelength within the range absorbed by the infrared absorption material used in the separation layer is irradiated with light, the infrared absorption material can be suitably denatured. [0123] (reactive polysilsesquioxane) The separation layer can be formed by polymerizing reactive polysilsesquioxane. In this way, the separation layer can be provided with high chemical resistance and high heat resistance. In this specification, reactive polysilsesquioxane refers to a polysilsesquioxane having a silanol group at the end of the polysilsesquioxane skeleton, or a polysilsesquioxane having a functional group capable of forming a silanol group through hydrolysis. Oxylkane, which can be polymerized with each other through condensation reaction of the functional group that can form the silanol group or silanol group. Also, as the reactive polysilsesquioxane, as long as it has a silanol group or a functional group that can form a silanol group, a silsesquioxane having a random structure, a cage structure, a trapezoidal structure, etc. can be used. Skeleton reactive polysilsesquioxane. [0125] Also, the reactive polysilsesquioxane is preferably one having a structure shown in the following chemical formula (8). [0126]

In chemical formula (8), R" is independently selected from the group consisting of hydrogen and an alkyl group having 1 to 10 carbons, and is selected from the group consisting of hydrogen and an alkyl group having 1 or more and 5 or less carbons. The one selected by the group is preferred. When R "is an alkyl group with hydrogen or carbon number of 1 or more and 10 or less, in the step of forming the separation layer, through heat treatment, the reactive polymer represented by the chemical formula (8) can be multiplied Semisiloxanes suitably undergo condensation reactions. In the chemical formula (8), p is preferably an integer of more than 1 and less than 100, and is preferably an integer of more than 1 and less than 50. Reactive polysilsesquioxane, when having the repeating unit represented by chemical formula (8), has a higher content of Si-O bonds than those formed with other materials, and can be formed in the infrared (0.78 μm or more and 1,000 μm or less), preferably far-infrared rays (3 μm or more and 1,000 μm or less), more preferably between 9 μm or more and 11 μm or less, a separation layer with high absorbance. [0128] Also, in the chemical formula (8), R' are independently the same or different organic groups. Here, R is, for example, an aryl group, an alkyl group, an alkenyl group, etc., and these organic groups may have substituents. In the case of R' being an aryl group, for example, phenyl, naphthyl, anthracenyl, phenanthrenyl, etc., and phenyl is preferred. Also, the aryl group may be bonded to the polysilsesquioxane skeleton via an alkylene group having 1 to 5 carbon atoms. In the case where R' is an alkyl group, the alkyl group includes, for example, linear, branched, or cyclic alkyl groups. Also, when R is an alkyl group, the number of carbon atoms is preferably 1-15, more preferably 1-6. Also, when R is a cyclic alkyl group, it may be an alkyl group having a monocyclic or 2-4 ring structure. The situation that R' is an alkenyl group is the same as that of an alkyl group, for example, linear, branched, or cyclic alkenyl groups, etc., and the alkenyl group has a carbon number of 2 to 15. Good, preferably 2-6. In addition, when R is a cyclic alkenyl group, it may be a monocyclic alkenyl group or an alkenyl group having a 2-4 ring structure. Alkenyl, for example, vinyl, and allyl, etc. Also, the substituents that R' has include, for example, hydroxyl and alkoxy groups. When the substituent is an alkoxy group, for example, straight-chain, branched-chain, or cyclic alkylalkoxy groups, etc., the number of carbons in the alkoxy group is preferably 1-15, and 1-10. better. Also, one of the viewpoints is that the siloxane content of the reactive polysilsesquioxane is preferably more than 70 mole % and less than 99 mole %, and more than 80 mole % and 99 mole % The following are preferred. When the siloxane content of the reactive polysilsesquioxane is 70 mol% or more and 99 mol% or less, when irradiated with infrared rays (preferably far infrared rays, more preferably light with a wavelength of 9 μm or more and 11 μm or less) , can form a deteriorating separation layer. [0134] Also, one of the viewpoints is that the weight average molecular weight (Mw) of the reactive polysilsesquioxane is preferably not less than 500 and not more than 50,000, and is more preferably not less than 1,000 and not more than 10,000. When the weight-average molecular weight (Mw) of the reactive polysilsesquioxane is 500 to 50,000, it can be easily dissolved in a solvent, and can be easily coated on a support plate. Commercially available products that can be used as reactive polysilsesquioxanes, for example, SR-13, SR-21, SR-23 and SR-33 produced by Konishi Chemical Industry Co., Ltd. <Manufacturing method of laminated body, and substrate processing method> One embodiment of the present invention (embodiment 4) is related to a method for manufacturing a laminated body, which is to have a rewiring layer on which components are actually mounted, and A method for producing a laminate of a sealing substrate in which the above-mentioned element is sealed with a sealing material and laminated on a support for supporting the above-mentioned sealing substrate via an adhesive layer, comprising coating the above-mentioned adhesive on the above-mentioned support. agent composition to form the above-mentioned adhesive layer forming step of the adhesive layer. In addition, in the method for producing a laminate of the present embodiment, the support is made of a light-transmitting material as the support, and before the step of forming the adhesive layer, the above-mentioned support is irradiated with light to degenerate. A separation layer forming step of forming a separation layer. In addition, the substrate processing method of this embodiment includes, using the method for manufacturing a laminated body according to one embodiment of the present invention, after the above-mentioned laminated body is obtained, and then irradiating light through the above-mentioned support body to modify the above-mentioned separation layer, A separation step of separating the laminate from the support, and a removal step of removing residues of the adhesive layer remaining on the sealing substrate side with a cleaning solution after the separation step. [0138] FIG. 1 is a diagram illustrating each step in a method for manufacturing a laminate and a method for treating a substrate according to Embodiment 1 of the present invention. The method of manufacturing the laminated body of this embodiment is to sequentially perform the step of forming the separation layer, the step of forming the adhesive layer, and the step of forming the sealing substrate. [Separation layer formation step] As shown in FIG. 1(a), the separation layer formation step is, for example, using a chemical vapor growth (CVD) method, etc., on a plane on one side of the support body 1 that can transmit light. The portion 1a is denatured by irradiating light to form a separation layer 2 . In addition, "the flat surface part of one side" means one of the flat surface parts which the support body 1 has. In addition, the "flat part" may have fine unevenness substantially viewed as a flat surface. [Continuing layer forming step] As shown in FIG. The adhesive composition is then heated or placed under a reduced pressure environment to remove the diluent solvent contained in the adhesive composition. Subsequently, if the adhesive layer contains a thermal polymerization initiator, the curable monomer contained in the adhesive layer can be polymerized by heat treatment. Also, the conditions for heating the adhesive layer 3 can be set appropriately on the basis of the 1-minute half-life temperature and the 1-hour half-life temperature in the thermal polymerization initiator, for example, at 50°C or more, 300°C Among the temperatures in the following ranges, it is more preferable to carry out under vacuum or an inert gas atmosphere such as nitrogen gas, and more preferably to carry out under an inert gas atmosphere such as nitrogen gas. [0141] Also, when the adhesive layer contains a photopolymerization initiator, the curable monomer contained in the adhesive layer can be polymerized as a result of exposure under an inert gas atmosphere such as nitrogen gas. In addition, exposure conditions may be appropriately set in accordance with the type of photopolymerization initiator and the like. [0142] Again, if the adhesive layer 3 does not contain curable monomers, after removing the solvent, no heating or exposure treatment is required. [0143] [Formation Step of Sealing Substrate] As shown in FIGS. The sealing substrate forming step in this embodiment is performed in the order of the rewiring layer forming step, the actual mounting step, the sealing step, and the thinning step. [0144] [Rewiring layer forming step] As shown in FIG. 1(c), the rewiring layer forming step is to form a rewiring layer 4 on the bonding layer 3. [0145] In one embodiment, the formation sequence of the rewiring layer 4 is as follows: first, on the bonding layer 3, silicon oxide (SiO_x ), dielectric layer such as photosensitive resin. The dielectric layer made of silicon oxide can be formed using, for example, a sputtering method, a vacuum evaporation method, or the like. The dielectric layer formed of photosensitive resin can be formed by coating the photosensitive resin by methods such as spin coating, dipping, in-line roller, spray coating, and slot coating, for example. [0146] Subsequently, on the dielectric layer, a conductor such as metal is used to form wiring. As a method for forming wiring, for example, known semiconductor process methods such as photolithography (photoresist lithography) and etching can be used. These lithographic etching processes include, for example, a lithographic etching process using a positive photoresist, and a lithographic etching process using a negative photoresist. [0147] Thus, when performing photolithographic etching treatment, etching treatment, etc., the adhesive layer 3 is exposed to an acid such as hydrogen fluoride or an alkali such as tetramethylammonium hydroxide (TMAH), and dissolves the photoresist In the photoresist solvent used in the agent. As the photoresist solvent, PGMEA, cyclopentanone, N-methyl-2-pyrrolidone (NMP), and cyclohexanone can be used. Among them, in the adhesive layer 3, in the cycloolefin polymer, the chemical resistance can be further improved due to the polymerization of the hardening monomer. Therefore, not only acid and alkali, but even when the adhesive layer 3 is exposed to these photoresist solvents, it can prevent dissolution or peeling. Therefore, a high-precision pattern can be formed on the bonding layer 3 through the photoresist, and it is easier to form the redistribution layer 4 . [0148] In the rewiring layer forming step, for example, heat treatment is performed in a high temperature environment of 200° C. for about 4 hours from the viewpoint of hardening the photoresist formed on the adhesive layer 3 . At this time, since the adhesive layer 3 has high heat resistance, cracks in the adhesive layer can be prevented. Furthermore, since the adhesive layer 3 has high heat resistance, even when it is exposed to a high temperature environment for a long time, it is easy to prevent the photoresist film formed on the adhesive layer 3 from shrinking. Therefore, the rewiring layer 4 can be easily formed on the adhesive layer 3 . [0149] As shown in Figure 1(d), the actual installation step is the step of actually installing the component 5 on the rewiring layer 4. The method of actually mounting the device 5 on the rewiring layer 4 can be performed, for example, using a chip mounter or the like. In addition, in the actual installation process, when the device 5 is actually mounted on the rewiring layer 4 via solder bumps, the solder bumps can also be sealed with an underfill before sealing the device 5 . [0150] As shown in Figure 1(e), the sealing step is a step of sealing the element 5 with a sealing material 6. It is not particularly limited. For example, the sealing material 6 can be compression-molded using a molding die while heating to 130° C. to 170° C. and maintaining a high viscosity state. Therefore, when the element 5 is sealed with the sealing material 6, the adhesive layer 3 is subjected to pressure treatment at a temperature of 130°C to 170°C in the state where the element 5 is arranged. However, since the adhesive layer 3 has high heat resistance, even when pressure is applied at a temperature of 130° C. to 170° C., deformation of the rewiring layer 4 on which the components 5 are arranged can be easily prevented. [0151] As shown in Figure 1(f), the thinning step is to thin the sealing material 6. The sealing material 6 can be thinned to the same thickness as the element 5, for example. [0152] In addition, after the thinning step, processes such as forming bumps on the sealing material and forming an insulating layer can be performed. The laminated body 8 shown in Fig. 1 (g) obtained according to the above steps is based on: a support body 1 that can pass through light, and a separation layer 2 that undergoes deterioration through light irradiation, an adhesive layer 3, and a sealing substrate 7 The sealing substrate 7 is composed of a sealing body sealed with a sealing material 6 that seals the element 5, and a rewiring layer 4 on which the element 5 is arranged on one side plane of the sealing material. [0154] [Separation step] As shown in FIG. 1(h), the separation step is to irradiate the separation layer 2 with light L through the support body 1, so that the separation layer 2 is deteriorated. The type and wavelength of the irradiated light L can be appropriately selected according to the permeability of the support 1 and the material of the separation layer 2, for example, YAG laser, ruby laser, glass laser, YVO laser, etc.₄ Solid lasers such as lasers, LD lasers, and fiber lasers, liquid lasers such as pigment lasers, CO₂ Gas lasers such as lasers, excimer lasers, Ar lasers, and He-Ne lasers, laser light such as semiconductor lasers, and free electron lasers, or non-laser light. In this way, the separation layer 2 can be altered, and the support body 1 and the sealing substrate 7 can be easily separated. Again, one of the laser light irradiation conditions of the situation of irradiating laser light can be for example the following conditions, but it is not limited to this: the average output value of laser light is better with more than 1.0W and below 5.0W, with 3.0 More than W and less than 4.0W are better; the repetition frequency of laser light is preferably more than 20kHz and less than 60kHz, preferably more than 30kHz and less than 50kHz; the scanning speed of laser light is more than 100mm/s and 10,000 mm/s or less is preferred. [0156] Subsequently, as shown in FIG. 1(i), the separation step is to separate the support body 1 from the sealing substrate 7. For example, a force is applied to the support body 1 and the sealing substrate 7 in a direction away from each other, so that the support body 1 and the sealing substrate 7 are separated. For example, one of the support body 1 and the sealing substrate 7 is fixed on the platform, and the other is lifted under suction by using a separation plate equipped with suction pads such as bellows, to make the support The body 1 is separated from the sealing substrate 7. [Removal step] As shown in FIG. For example, a cleaning solution containing an organic solvent can be used to remove the residues of the adhesive layer 3 and the separation layer 2. The subsequent layer 3 can use the dilution solvent used for the adhesive composition as a cleaning solution, that is, It is preferable to use a hydrocarbon solvent, especially a terpene solvent such as p-methane, and a condensed cyclic hydrocarbon such as tetrahydronaphthalene. [0158] After the above steps, the isolated Sealing substrate 7. [0159] In addition, processes such as solder ball formation, dicing, and oxide film formation may be performed on the sealing substrate 7. [0160] [Embodiment 5] Next, other embodiments of the present invention will be described. (Embodiment 5). Also, for ease of description, members having the same functions as those described in the above-mentioned embodiment will be marked with the same symbols, and their description will be omitted. The method for manufacturing the laminated body of Embodiment 2, and The substrate processing method is to sequentially implement a separation layer forming step, a bonding layer forming step, a sealing substrate forming step, a separation step, and a removal step, wherein the sealing substrate forming step is to arrange components on the bonding layer 3. Also, as shown in FIG. As shown in 2(a), the separation layer forming step is the same as Embodiment 1, so its description is omitted. The layer forming step is to apply the adhesive composition of one embodiment of the present invention on the support body 1, and to remove the diluting solvent contained in the adhesive composition under the same conditions as in Embodiment 1, but not to carry out subsequent steps. The step of heating or exposing the bonding layer to harden. [Sealing substrate forming step] As shown in Figure 2 (c) to (f), the sealing substrate forming step is to form a sealing substrate 7 on the bonding layer 3 The sealing substrate forming step in this embodiment is carried out in the order of the configuration step, the sealing step, the thinning step, and the rewiring layer forming step. [0163] As shown in Figure 2 (c), the configuration step is Arrange the element 5 on the adhesive layer 3. More specifically, for example, the arrangement step is to heat the support body 1 forming the adhesive layer 3 to about 100° C., for example, using a die bonder (Die Bonder) etc., press the element 5 on the adhesive layer 3, so that the element 5 is arranged on the adhesive layer 3. [0164] Also, in the case where the adhesive layer contains a thermal polymerization initiator, in the configuration step, it can be placed on the adhesive layer 3 After placing the element 5 on top, the curable monomer contained in the adhesive layer 3 is polymerized by heating the adhesive layer 3 reaction. In addition, when the adhesive layer contains a photopolymerization initiator, the adhesive layer 3 can be hardened by exposure. [0165] As shown in Fig. 2(d), the sealing step is to use the sealing material 6 to seal the element 5. In the sealing step, as in the first embodiment, the element 5 is sealed with the sealing material 6, and the element 5 is placed on the adhesive layer 3, and the pressure treatment is performed at a temperature of 130°C to 170°C. However, since the adhesive layer 3 has high heat resistance, it is possible to prevent the positional deviation of the element 5 on the adhesive layer 3 due to the pressure of the sealing material 6 under the temperature condition of 130° C. to 170° C. Therefore, the sealing substrate 7 in which the elements 5 are arranged with high precision can be easily formed on the adhesive layer 3 . [0166] As shown in Figure 2(e), the thinning step is a step of thinning the sealing material 6. The sealing material 6 may be thinned, for example, until the terminal portion of the element 5 is exposed to the sealing material 6 . [0167] As shown in FIG. 2(f), the rewiring layer forming step is a step of forming a rewiring layer 4 on the plane portion where the element 5 is exposed in the sealing body. [0168] In this embodiment, the formation sequence of the rewiring layer 4 can be the same as that of the first embodiment, so the description will be omitted. [0169] Through the above steps, the laminated body 9 can be obtained in the same way as in Embodiment 1. Subsequently, as shown in Figure 2 (g) and (h), in the separation step, when the light is irradiated from the support body 1 to the separation layer 2, the separation layer 2 can be deteriorated, and the support body 1 is formed by The laminate 9 is separated. Further, in the subsequent removing step, as in Embodiment 1, the adhesive layer 3 is removed using a hydrocarbon solvent, and the sealing substrate 7 can be obtained ((i) of FIG. 2 ). [0171] [Embodiment 6] Hereinafter, Embodiment 6 of the present invention will be described. In addition, for simplicity of description, members having the same functions as those described in Embodiments 1 and 2 above are denoted by the same reference numerals, and the description thereof will be omitted. The manufacturing method of the laminated body and the manufacturing method of the sealing substrate according to Embodiment 3 are carried out in the order of the separation layer forming step, the separation layer peripheral part removal step, the bonding layer forming step, the sealing substrate forming step, and the bonding layer removing step . [0172] [Separation layer formation step] As shown in FIG. 3(a), the separation layer formation step is the same as that of Embodiments 1 and 2, so the description will be omitted. [Separation layer peripheral part removal step] As shown in Figure 3 (b), the separation layer peripheral part removal step is, for example, using EBR (Edge Bead Removal) to remove the peripheral part formed on the support body 1 Separation layer 2 around the perimeter of part 1b. The peripheral portion 1b is a peripheral portion of the planar portion 1a. In this way, as shown in FIG. 3(b), on the planar portion 1a, the portion surrounded by the peripheral portion 1b from which the separation layer 2 is removed is in a state where the separation layer 2 is formed. Details of EBR processing will be described later. [Adhesive Layer Formation Step] As shown in FIG. 3(c), the adhesive layer formation step is to form an adhesive layer on the surface of the support body 1 on which the separation layer 2 around the peripheral portion 1b is removed. 3. In this way, the separation layer 2 formed on the support body 1 can be completely covered by the adhesive layer 3 . Also, since the method of forming the adhesive layer 3 is the same as that of the first embodiment, the description thereof will be omitted. [0175] [Sealing substrate forming step] As shown in Fig. 3 (d) to (g), the sealing substrate forming step is a step of forming a sealing substrate 7' on the adhesive layer 3. The sealing substrate forming step in this embodiment is performed in the order of the rewiring layer forming step, the actual mounting step, the sealing step, and the thinning step. [0176] As shown in FIG. 3( d), in Embodiment 3, in the rewiring layer forming step, the outer peripheral end of the rewiring layer 4 formed on the bonding layer 3 is removed through trimming. In addition, the trimming of the rewiring layer 4 may be removed by grinding using known means such as a grinder. In this way, EBR treatment can be easily performed in the laminate 8' (Fig. 3) in a subsequent step. [0177] Also, since the method of forming the rewiring layer 4 is the same as that of Embodiment 1, the description thereof will be omitted. [0178] As shown in Figure 3 (e) to (g), in Embodiment 3, the actual installation step, sealing step, and thinning step are carried out. Also, in Embodiment 3, the actual mounting step, sealing step, and thinning step can be performed in the same manner as in Embodiment 1, so the description will be omitted. [0179] [Adhesive Layer Removal Step] As shown in FIG. 3( h), the adhesive layer removal step is, for example, to remove the adhesive layer 3 formed on the entire periphery of the peripheral portion 1b of the support body 1 through EBR treatment. In the bonding layer 3, the part formed on the entire periphery of the peripheral part 1b of the support body 1 can be bonded to the support body 1 and the sealing substrate 7' without intervening the separation layer 2, so when removing this part, the When the separation layer 2 deteriorates, the support body 1 and the sealing substrate 7' can be smoothly separated. In particular, when removing the adhesive layer 3 formed on the outside of the outer peripheral end portion 2a of the separation layer 2 formed on the support body 1, the support body 1 and the sealing substrate 7' must be separated by the separation layer. 2 forms a bonded state, so when the separation layer 2 is changed, the support body 1 and the sealing substrate 7' can be separated more smoothly. [Separation step-removal step] As shown in Figure 3(i)-(k), the sealing substrate 7' can be produced by performing the separation step and the removal step in the same manner as in Embodiment 1. . (EBR treatment) In the above (A) step of removing the peripheral part of the separation layer, the EBR treatment of removing the separation layer 2 formed around the peripheral part 1b of the support body 1, and (B) in the step of removing the adhesive layer The method of removing the EBR treatment of the adhesive layer 3 formed on the entire circumference of the peripheral part 1b of the support body 1, for example, can use (i) the method of using a solvent to dissolve and remove, (ii) use a cutter or a blade to perform physical (iii) a method of removing by ashing under atmospheric pressure, etc. Among them, the method of using a solvent to remove is preferable from the standpoint of strength and practicability. In the method of using solvent removal, the solvent used, as long as the separation layer 2 or the following layer 3 of the dissolving removal object get final product, there is no special limitation, those who are familiar with this technology can cooperate with desired removal The composition of the object can be selected appropriately. For example, for the adhesive layer 3, in particular, terpene-based solvents such as p-methane, condensed cyclic hydrocarbons such as tetralin, and the like can be used. Also, for the separation layer 2, for example, a primary aliphatic amine such as monoisopropanolamine (MIPA), a secondary aliphatic amine such as 2-(methylamino)ethanol, or a tertiary aliphatic amine such as triethanolamine can be used. At least one amine selected from the group consisting of aliphatic amines, alicyclic amines such as cyclohexylamine, aromatic amines such as benzylamine, and heterocyclic amines such as N-hydroxyethylpiperidine , or, solvents containing these amines, etc. In addition, among the solvents, those listed in the above-mentioned (addition of solvent) may be used in combination with organic solvents other than the terpene solvent. [0184] The method of supplying the solvent, for example, by spraying the solvent, the method of supplying the solvent to the object to be removed, the method of immersing the object to be removed in the solvent, etc. [0185] In the method of supplying the solvent to the object of removal through spraying of the solvent, it is better to supply the solvent to the object of removal while the support body 1 is rotating, from the viewpoint of uniformly supplying the solvent. The method of supplying the solvent while the support body 1 is rotating, for example, disposing the nozzle for spraying the solvent directly above the adjacent outer side of the peripheral portion 1b of the support body 1, and then injecting the solvent from the peripheral portion 1b of the support body 1 A method in which the support body 1 is rotated using a spin coater during continuous dripping adjacent to the outside, and the like. In this way, the solvent can be directly supplied from the adjacent outside of the entire periphery of the peripheral portion 1b of the support 1 . Also, the number of nozzles to be arranged is not particularly limited, as long as it is one or more. Accompanied in the above-mentioned method of the revolution of support body 1 and solvent spraying, the flow rate of the solvent when the speed of revolution of support body 1, solvent is supplied by nozzle, and the supply time of solvent etc., remove the composition content of object according to desire, The thickness of the object to be removed, the type of solvent used, and the degree of removal vary, but those who are familiar with the technology can evaluate the best conditions without difficulty and make decisions. [0187] Also, after using a solvent to dissolve and remove the object, it is better to dry the support body 1 and the like. Through the drying step, unnecessary solvents and solvents impregnated into the separation layer 2 or the adhesive layer 3 that are not parts to be removed can be removed. Drying method, for example, can use spin coater etc., in making support body 1 vibrate dry in revolution, use nitrogen gas etc. with the drying of blasting in the form of spraying, the drying of calcining, and drying under reduced pressure Wait. In addition, among these drying methods, any method may be used alone, or any method may be used in combination of two or more methods. [0189] [Embodiment 7] Embodiment 7 of the present invention will be described below. In addition, for simplicity of description, the components described in Embodiments 1 to 3 above have the same functions, are denoted by the same reference numerals, and the description is omitted. The manufacturing method of the laminated body and the manufacturing method of the sealing substrate according to Embodiment 4 are carried out in the order of the separation layer forming step, the separation layer peripheral part removal step, the bonding layer forming step, the sealing substrate forming step, and the bonding layer removing step . [0190] [Separation Layer Formation Step - Subsequent Layer Formation Step] The separation layer formation step, the separation layer peripheral part removal step, and the substratum formation step are the same as in Embodiment 2, so the description will be omitted. [0191] [Sealing substrate forming step] The sealing substrate forming step is to arrange the element 5 on the adhesive layer 3 and seal it. That is, the sealing substrate 7' is formed in the same steps as in the second embodiment. Subsequently, as shown in Fig. 4(a), the outer peripheral end portion of the sealing substrate 7' is removed by trimming. In addition, the trimming of the sealing substrate 7 may be ground and removed using known means such as a grinder. Thus, in a subsequent step, in the laminate 9' (Fig. 4), amine treatment can be easily performed. [Backing layer removal step] As shown in FIG. 4(b), it is the same as Embodiment 3. In Embodiment 4, the outer peripheral end of the sealing substrate 7' can also be trimmed to remove the more separated parts. The outer peripheral end portion 2a of the layer 2 is the adhesive layer 3 formed further outside. Therefore, when the separation layer 2 is modified, the support body 1 and the sealing substrate 7' can be smoothly separated. [0193] Subsequently, as in Embodiments 1 to 3, the sealing substrate 7' can be obtained by removing the adhesive layer 3 using a hydrocarbon solvent. [0194] [Other Embodiments] The manufacturing method of the laminated body and the substrate processing method of the present invention are not limited to the above-mentioned embodiments (Embodiment 4, Embodiment 5, Embodiment 6, and Embodiment 7). For example, in the manufacturing method of the laminated body of other embodiments, the sealing substrate in the laminated body formed by the manufacturing method of the laminated body of each embodiment may be laminated on other adhesive layers and other separation layers. The manufacturing method of the laminated body of a support body. In this way, the support on the side of the adhesive layer used for forming the sealing substrate can be separated, and the sealing substrate can be properly processed while supporting the sealing substrate using another support. Also, the manufacturing method of the laminated body of other embodiments is a manufacturing method of a laminated body obtained by laminating a laminated body according to the order of the substrate, the adhesive layer, and the support body, which comprises: on the above-mentioned substrate On, or at least one of the above-mentioned supports, apply the adhesive composition according to one embodiment of the present invention, and form the above-mentioned adhesive layer by heating the adhesive layer forming step. Wherein, the substrate can be, for example, flexible substrates such as silicon, ceramics, or polyimide resin, etc., and typically, it can be a silicon embedded carrier (Interposer). [0196] With the above constitution, on the support body, for example, it is easy to process a silicon embedded carrier (Interposer) to form through-hole electrodes. That is, when an adhesive layer is formed using the adhesive composition according to the embodiment of the present invention, it is easy to form a laminate even in the semiconductor sealing technique of the injection type. The present invention is not only limited to above-mentioned each embodiment, can carry out various changes in the range shown in claim item, the embodiment that the means of the technology disclosed respectively by different embodiment is properly combined is also included in this within the technical scope of the invention. [Example] [0198] Using the base polymer and curable monomer as the resin component, the adhesive compositions of Examples 1-15 were prepared. At the same time, the adhesive compositions of Comparative Examples 1 to 4 were prepared, and then the adhesive compositions of Examples 1 to 15 and Comparative Examples 1 to 4 were used to form an adhesive layer, and each adhesive layer was subjected to element sealing using a compression mold Adaptability assessment, adaptability assessment to the process of forming insulation patterns. [Manufacture of Adhesive Composition, and Formation of Adhesive Layer] (Example 1) APL6015 (cycloolefin polymer: manufactured by Mitsui Chemicals Co., Ltd.) 85 of the adhesive composition of Example 1 In parts by weight, 15 parts by weight of A-DCP (tricyclodecane dimethanol diacrylate: manufactured by Shin-Nakamura Chemical Co., Ltd.), which is a curable monomer, was dissolved in 400 parts by weight of decahydronaphthalene. Next, Paroil TCP (thermal polymerization initiator: manufactured by NOF Co., Ltd.) was added to 100 parts by weight of the curable monomer to make up to 2 parts by weight to prepare an adhesive composition. In addition, Paroil TCP was dissolved in 10 parts by weight of butyl acetate (added solvent) and added to the resin component. Next, on the glass support body (10cm * 10cm, thickness 700 μ m), under the conditions of flow rate 400sccm, pressure 700mTorr, high frequency power 2500W and film forming temperature 240 ℃, use C as reaction gas₄ f₈ , according to the CVD method to form a separation layer of carbon fluoride film (thickness 1μm). [0202] Next, the adhesive composition of Example 1 was coated on the separation layer formed on the glass support using the spin coating method while maintaining 1500rpm rotation. Subsequently, the glass support coated with the adhesive composition of Example 1 was preheated at 140° C. for 5 minutes to form the adhesive layer of Example 1 (film thickness 3 μm). The adhesive layer of Example 1 was used in the following evaluations 1 and 2, respectively. (Examples 2 to 15) In Examples 2 to 15, in order to use different composition contents and composition ratios from Example 1, base polymers, hardening monomers and polymerization initiators were added respectively to obtain Adhesive composition. Subsequently, these adhesive compositions were used to form the adhesive layers of Examples 2-15. (Comparative Examples 1-4) In addition to using a cycloolefin polymer with a lower glass transition temperature, or a thermoplastic elastomer, the others were prepared in accordance with the sequence of the adhesive composition of Example 1 to prepare Comparative Example 1 ~4 Adhesive composition. Next, using the adhesive compositions of Comparative Examples 1-4, according to the same sequence as in Example 1, spin-coat on the glass support forming the separation layer, and preheat at 160°C for 5 minutes. An adhesive layer with a thickness of 5 µm was formed. [0205] Again, the base polymers and curable monomers used in Examples 1 to 15 and Comparative Examples 1 to 4 are as follows. In addition, in the following Tables 2-4, the compositions of Examples 1-15 and Comparative Examples 1-4 are marked respectively.・The following is a cyclic polyolefin represented by formula (9) (manufactured by Mitsui Chemicals Co., Ltd., "APL6015 (trade name)", Tg=140, Mw=80,000, Mw/Mn=2.0, m: n= 58:42 (mol ratio)) [0207]

・The following is the cyclic polyolefin shown in formula (10) (manufactured by Polyplastics Co., Ltd., "TOPAS6015 (trade name)", Tg=140, Mw=80,000, Mw/Mn=2.0, m: n= 48:52 (mol ratio)) [0209]

・Cyclic polyolefin represented by the above formula (10) (manufactured by Polyplastics Co., Ltd., "TOPAS6017 (trade name)", norbornene content 82% by weight, Tg=160, Mw=80,000, Mw/Mn =2.0, m:n=43:57 (molar ratio) , "Septon2004 (trade name)", Tg=90°C, styrene content 18%, molecular weight 90,000) The glass transition temperature (Tg) obtained by the analysis (DMA: Dynamic Mechanical Analysis) is as shown in Table 1 below. [0212]

Again, as shown in Table 1, the glass transition temperature (Tg(DMA)[°C]) is to use the dynamic viscoelasticity measuring device Rheologel-E4000 (made by UBM Co., Ltd.), under the condition of frequency 1Hz, It is obtained based on the change of viscoelasticity measured from 25°C to 300°C at a heating rate of 5°C/min. In Tables 2 to 4 described later, except for the glass transition temperature (Tg(DMA) [°C]) of the adhesive layer of Examples 1 to 10 and 12 to 15, a preheating treatment at 140°C for 5 minutes was carried out, and then Except for the measurement after heat treatment at 200°C for 1 hour under a nitrogen atmosphere, all other measurements were carried out under the same conditions as the measurement of the glass transition temperature shown in Table 1. Also, the glass transition temperature (Tg(DMA)[°C]) of the adhesive layer in Example 11 was preheated at 140°C for 5 minutes, and then a high-pressure mercury lamp UV exposure machine (manufactured by ORC Co., Ltd. ), under reduced vacuum, 500mJ/cm² Under the conditions except those measured after the exposure treatment, the others were measured under the same conditions as the measurement of the glass transition temperature shown in Table 1. The glass transition temperature (Tg(DMA)[°C]) of the adhesive layer of Comparative Examples 1, 2, and 4 is based on the glass shown in Table 1 except for the preheating treatment at 160°C for 5 minutes The measurement of the transition temperature is carried out under the same conditions. In addition, the glass transition temperature (Tg(DMA)[°C]) of the adhesive layer of Comparative Example 3 was under the same conditions as the adhesive layer of Example 1, except that the preheating treatment at 160°C for 5 minutes was not carried out. Carry out heat treatment and measure the glass transition temperature. [0217] [Hardening monomer] ・The following is tricyclodecane dimethanol diacrylate represented by formula (11) (manufactured by Shin-Nakamura Chemical Co., Ltd., "A-DCP (trade name)") [0218]

・The following is tricyclodecane dimethanol dimethacrylate represented by formula (12) (manufactured by Shin-Nakamura Chemical Co., Ltd., "DCP (trade name)") [0219]

・The following is 1,3-adamantanediol diacrylate represented by formula (13) (manufactured by Mitsubishi Gas Chemical Co., Ltd., "ADDA (trade name)") [0221]

・The following is 5-hydroxyl-1,3-adamantanediol dimethacrylate represented by formula (14) (manufactured by Mitsubishi Gas Chemical Co., Ltd., "HADDM (trade name)") [0223]

・The following is 1,3,5-adamantanetriol trimethacrylate represented by formula (15) (manufactured by Mitsubishi Gas Chemical Co., Ltd., "ADTM (trade name)") [0225]

[Evaluation 1: Evaluation of the suitability of element sealing using a compression mold] A bare chip (bare chip) is placed on a specific position of the bonding layer in Example 1, and a sealant (sealing material) is used to seal the bare chip. At this time, the degree of deviation of the position of the die is used as an evaluation of the adaptability of the compression mold for molding. [0227] The configuration of the bare chip (Bare chip) is implemented by using a die bonder (Die Bonder) (manufactured by TRESKY Corporation). First, heat the die bonder board to 150° C., and press a 2 mm square silicon bare die on the adhesive layer of Example 1 under a pressure of 35 N for 1 second. In this way, as shown in FIG. 5 , the bare die (device) 5 is placed on the peripheral parts and the central part of the four sides of the adhesive layer 3 formed by the glass support body 1 . [0228] Next, the bonding layer of the embodiment 1 with the bare crystal was heated at 200° C. for 1 hour under a nitrogen atmosphere. After heating, make the bare crystal into a state of arrangement, place the glass support body forming the adhesive layer of Example 1 on a plate heated to 50°C, and then put a sealant containing 12g of epoxy resin on it. Under the decompression condition of 10Pa, use the attachment device to apply a pressure of 1 ton to the pressing plate heated to 130°C, and perform compression for 5 minutes (as shown in Figure 2(c) and (d), equivalent to in the configuration step). In this way, the bare die arranged on the adhesive layer is sealed by the sealing material, and the laminated body of Example 1 in which the sealing substrate is laminated is obtained. [0229] Use an optical microscope to observe the laminate of Example 1 from the glass side, and evaluate the degree of positional deviation of the bare die 5 after attachment. As shown in FIG. 5 , the sum of the moving distances in the X direction and the Y direction is obtained from the position of each die 5 disposed on the adhesive layer 3 when attached, and is taken as the moving distance of each die. Subsequently, the average value of the moving distance of the bare die 5 is calculated as an evaluation value for estimating the moving distance. In the suitability evaluation for sealing the compression mold, if the moving distance of the bare die 5 is less than 3 μm, it is evaluated that there is no position deviation “○” and the moving distance of the bare die 5 is greater than 3 μm, then the position is evaluated There is a deviation "×". Also, the bonding layer of Examples 2-10, 12-15, and Comparative Example 3 is based on the same sequence as that of Example 1. After forming the bonding layer, then use a compression mold to carry out the adaptability assessment of element sealing . [0232] Also, for the bonding layer of Comparative Examples 1, 2, and 4, after bonding the bare die to a specific position, except that the bonding layer is not heated, the others are all in the same order as the bonding layer of Evaluation Example 1 Typically, an evaluation of the suitability for sealing of components using a compression mold is performed. [0233] The adhesive layer of Example 11 is to use a die bonder to bond the bare die, instead of using a high-pressure mercury lamp UV exposure machine (manufactured by ORC Co., Ltd.), to replace the heat treatment at 200°C for 1 hour under a nitrogen atmosphere , and under reduced vacuum, 500mJ/cm² Except for the exposure treatment under the above conditions, the evaluation of the adaptability of the element sealing using the compression mold was performed in the same order as the evaluation of the adhesive layer in Example 1. [0234] In Tables 2 to 4 shown below, the suitability evaluation results for element sealing using a compression mold are shown. [Assessment 2: Evaluation of the suitability of the insulating pattern forming process] For the adhesive layers of Examples 1-15 and Comparative Examples 1-4 prepared in the same order as the adhesive layer used in Evaluation 1, Carry out the suitability assessment of the insulating pattern forming process (assessment 2). In the adaptability evaluation of the insulating pattern forming process, it is to evaluate the chemical resistance to the photoresist solvent, and to evaluate the heat resistance of the heat treatment after pattern formation. Also, in Examples 1 to 10, 12 to 15 and Comparative Examples 1 to 4, the suitability evaluation of the insulating pattern forming process is carried out after heat treatment at 200° C. for 1 hour under nitrogen atmosphere respectively . In addition, the adhesive layer of Example 11 was exposed under the same exposure conditions as those in Evaluation 1, and then evaluated for its adaptability to the insulating pattern forming process. (Evaluation of drug resistance) First, in the evaluation of the positive photoresist, spin coating at 1000 rpm was performed using the composition PN-0379D for forming an insulating film (containing PGMEA, manufactured by Tokyo Ohka Industry Co., Ltd.) After each bonding layer, preheat treatment at 110°C for 4 minutes to form a dry film of 5 μm. Next, pattern exposure was performed on the coating film using a collimated light exposure machine (ghi) manufactured by ORC Corporation. Next, the exposed film was immersed in 2.38% TMAH aqueous solution for 5 minutes at 23°C to form a 100 μm wide circuit pattern photosensitive insulating film obtained through positive photoresist. Also, in the evaluation of the negative photoresist, BL301 (including NMP, manufactured by Asahi Kasei Co., Ltd.) using the negative photoresist was spin-coated on each adhesive layer at 1000 rpm, and subjected to the conditions of 110° C. and 4 minutes. Preheat treatment to form a 5 μm adhesive layer. Secondly, after pattern exposure using a parallel light exposure machine (ghi) manufactured by ORC, dip in cyclohexanone for 5 minutes at 23°C to form a negative photoresist with a 100 μm wide circuit pattern photosensitive insulating film. The evaluation of drug resistance is to immerse the above-mentioned pattern in PGMEA, TMAH, NMP, and cyclohexanone at 23°C for 5 minutes, and then visually observe the appearance of each adhesive layer when infiltrating Variety. In the evaluation of chemical resistance, when there is no change in weight and appearance, the evaluation is "○", and when there is a change in weight or appearance (floating of the circuit pattern, or whether there is crack in the adhesive layer), the evaluation is "X". [0240] Tables 2 to 4 below show the evaluation results of drug resistance in the evaluation of the suitability of the insulating pattern forming process. (Evaluation of heat resistance) Next, the evaluation of heat resistance is to evaluate the formation of 100 μm wide lines after heat-treating each laminated body after evaluation of chemical resistance at 200° C. for 4 hours in a nitrogen atmosphere Whether the graphics will shrink. The evaluation of heat resistance is to use an optical microscope to measure the width of a 100 μm wide circuit pattern after heat treatment. When the width increase or decrease is less than 5 μm, the heat resistance is evaluated as "○". When the width increase or decrease is greater than 5 μm, Then, the heat resistance was evaluated as "x". [0242] Tables 2 to 4 below show the evaluation results of heat resistance in the evaluation of the suitability of the insulating pattern forming process. [0243] Also, after the evaluation of heat resistance, a bare die was placed on each bonding layer forming a circuit pattern, and under the same conditions as Evaluation 1, the die was sealed with a sealant containing epoxy resin to obtain A laminate laminated on a sealing substrate. [Evaluation 3: Evaluation of detergency] In each laminate formed in Evaluation 1 and 2, laser light with a wavelength of 532nm was irradiated from the side of the glass support to the side of the separation layer to cause deterioration of the separation layer. Next, each laminated body was separated by the glass support body, and the adhesive layer was exposed. Using p-methane as a cleaning solution, spray cleaning treatment was performed for 5 minutes to clean the sealing substrate with the adhesive layer remaining. The evaluation of detergency is to visually confirm whether there is residue of the adhesive layer on the sealing substrate. If no residue is found at all, the detergency evaluation is "○", and if a large amount of residue is found, the detergency evaluation is " "×". [0245] The following table 2 shows the composition and evaluation results of the adhesive compositions of Examples 1-6.

[0246] The following Table 3 shows the composition and evaluation results of the adhesive compositions of Examples 7-15. [0247]

[0248] The following Table 4 shows the composition and evaluation results of the adhesive compositions of Comparative Examples 1-4. [0249]

(Evaluation results) As shown in Tables 2 and 3, in the suitability evaluation of element sealing using a compression mold, any one of the adhesive layers in Examples 1 to 15 was not found to be configured. The crystal position deviates (○). On the other hand, as shown in Table 4, in Comparative Examples 1-4, it was found that the position of the die was deviated (×). From these results, it can be seen that when a base polymer having a Tg of 140° C. or higher is used, an adhesive composition suitable for sealing a component on an adhesive layer and which can easily seal the component can be obtained. Also, in the following Table 5, in order to express in the adhesive layer of embodiment 7, in the adaptability evaluation of using the compression mold to carry out element sealing, the heating temperature in the pressing machine for pressing is changed from 130 ℃ to 150°C and 170°C results. [0252]

Also, as shown in Table 5, compared with Comparative Example 1, it was found that the wafer moved significantly (535 μm), in Example 7, even when the temperature of the flat plate during sealing was 170° C., it was hardly found. The wafer position deviates (≦3μm). Also, as shown in Tables 2 and 3, in the suitability evaluation of element sealing using a compression mold, regardless of any one of the bonding layers in Examples 1 to 15, no die position for configuration was found Deviation (○) occurs. On the other hand, as shown in Table 4, in Comparative Examples 1-4, it was found that the position of the die was deviated (×). In particular, in the adhesive layer of Comparative Example 3, even if A-DCP was added, sufficient results could not be obtained in Evaluation 1 and Evaluation 2. From the results of these Examples 1 to 15 and Comparative Examples 1 to 4, it was confirmed that when a cycloolefin polymer and a curable monomer having a Tg of 100°C or higher are used, it is possible to obtain a When, also can prevent the deformation of the adhesive layer. Also, from the results, it was confirmed that when a cycloolefin polymer and a curable monomer having a Tg of 100° C. or higher are used, an adhesive that can place an element on the adhesive layer and can easily seal the element can be obtained. agent composition. In the chemical resistance of the adaptability assessment of the insulating pattern forming process, it is confirmed that any one of Examples 1-15 and Comparative Examples 1-4 has high chemical resistance to each photoresist solvent sex. Among them, in the evaluation of heat resistance, the adhesive layers of Examples 1-15 did not show any slight shrinkage (o) in the photoresist pattern formed on the adhesive layer under the heating condition of 200° C. for 4 hours. In contrast, in the adhesive layers of Comparative Examples 1 to 4, shrinkage of the photoresist pattern was found (×). From the above results, it is known that when a cycloolefin polymer with a higher Tg is used together with a curable monomer, an adhesive layer that prevents shrinkage of the photoresist pattern can be formed. Also, the circuit pattern formed on the bonding layer of Example 7 and Comparative Example 1 is compared with the circuit pattern formed on the glass support without forming the bonding layer, according to the heat resistance in Evaluation 2 The evaluation is to conduct heat treatment under the same conditions, and measure the increase or decrease of the width of the circuit pattern, as well as the amount of change. The results are shown in Table 6 below. [0257]

As shown in Table 6, before and after the heat treatment in the method of forming patterns using photoresist, it was confirmed that the degree of shrinkage of the photoresist pattern formed on the adhesive layer of Example 7 was different from that of glass The degree of shrinkage of the photoresist pattern formed directly on the support hardly changed. [0259] In addition, in the evaluation of detergency (evaluation 3), the adhesive layers of Examples 1 to 15, as shown in Tables 2 to 4, can be well cleaned and removed with p-methane (◯). Known from the above results, when Tg is 100 DEG C or more cycloolefin polymers with curable monomers, can make a kind of has adaptability to the insulating pattern forming process, and has the ability to the insulating pattern forming process Adhesive composition of highly adaptable adhesive layer [industrial applicability] [0261] The present invention is particularly suitable for use in the manufacture of semiconductor devices using emission technology.

1‧‧‧support body 3‧‧‧connecting layer 4‧‧‧rewiring layer 5‧‧‧bare crystal (Bare chip) (component, sealing body) 6‧‧‧sealing material (sealing body) 7, 7'‧‧‧Sealing Substrate 8, 8', 9, 9'‧‧‧Laminates

[FIG. 1] It is an explanatory drawing of the manufacturing method of the laminated body of one embodiment of this invention, and a substrate processing method. [Fig. 2] An explanatory diagram of a method of manufacturing a laminate and a method of processing a substrate according to an embodiment of the present invention. [FIG. 3] An explanatory diagram of a method of manufacturing a laminate and a method of processing a substrate according to an embodiment of the present invention. [FIG. 4] A schematic explanatory diagram of a method of manufacturing a laminate according to an embodiment of the present invention. [Fig. 5] It is a schematic explanatory diagram of the device arrangement on the next layer in the suitability evaluation of the device sealing body using the compression model.

Claims (13)

An adhesive composition, which is an adhesive composition that forms the above-mentioned adhesive layer in a laminate obtained by laminating a substrate, an adhesive layer, and a support in this order, and is characterized in that, in the above-mentioned adhesive composition, The resin component contains a cycloolefin polymer with a glass transition temperature of 160°C or higher and a polyfunctional curable monomer, and the content of the polyfunctional curable monomer in the resin component is 40% by weight or less, When the polyfunctional curable monomer is polymerized to harden the adhesive layer, the glass transition temperature of the adhesive layer is 160° C. or higher. An adhesive composition, which is an adhesive composition that forms the above-mentioned adhesive layer in a laminate obtained by laminating a substrate, an adhesive layer, and a support in this order, and is characterized in that, in the above-mentioned adhesive composition, The resin component contains a cycloolefin polymer with a glass transition temperature of 140°C or higher and a polyfunctional curable monomer, and the content of the polyfunctional curable monomer in the above resin component is not less than 10% by weight. 40 In the range of not more than % by weight, when the polyfunctional curable monomer is polymerized to harden the adhesive layer, the glass transition temperature of the adhesive layer is 160°C or higher. The adhesive composition according to claim 1 or 2, wherein the above-mentioned polyfunctional hardening monomer has a polycyclic aliphatic structure. The adhesive composition according to claim 1 or 2, wherein the cycloolefin polymer is an addition polymer of a structural unit having a polycyclic aliphatic structure and a vinyl monomer unit. The adhesive composition of claim 1 or 2 further contains a solvent capable of dissolving the above-mentioned resin components, and the solvent is one selected from the group consisting of condensed polycyclic hydrocarbons and branched hydrocarbons. An adhesive film, characterized in that an adhesive layer formed of the adhesive composition according to any one of claims 1 to 5 is formed on the film. A method for manufacturing a laminate, which is a method for manufacturing a laminate obtained by laminating a substrate, an adhesive layer, and a support in this order, characterized in that it includes any one of claims 1 to 5 An adhesive layer forming step in which the adhesive composition is coated on the above-mentioned substrate or at least one of the above-mentioned support body and heated to form the above-mentioned adhesive layer. A method for manufacturing a laminate, which is a method for manufacturing a laminate obtained by laminating a substrate, an adhesive layer, and a support in this order, and is characterized in that The above-mentioned substrate is a sealing substrate provided with: a sealing body formed by sealing the element with a sealing material, and a rewiring layer on which the above-mentioned element is actually mounted on a plane part provided on one side of the sealing body, and includes: an adhesive composition Coating on the above-mentioned support body, forming the above-mentioned adhesive layer by heating the step of forming the adhesive layer, and the step of arranging the device on the above-mentioned adhesive layer, and the step of sealing the above-mentioned device with a sealing material after the above-mentioned arranging step , the transition temperature of the above-mentioned adhesive layer is 160°C or higher, and in the above-mentioned adhesive composition, the resin component is a cycloolefin polymer with a glass transition temperature of 160°C or higher. A method for manufacturing a laminate, which is a method for manufacturing a laminate obtained by laminating a substrate, an adhesive layer, and a support in the order of lamination, wherein the substrate is characterized in that the substrate is formed by sealing elements through a sealing material The sealing body, and the sealing substrate of the rewiring layer on which the above-mentioned elements are actually installed on the flat part of one side of the above-mentioned sealing body, and includes: coating the adhesive composition on the above-mentioned support body, and forming by heating The bonding layer forming step of the above bonding layer, and the rewiring layer forming step of forming the above rewiring layer on the bonding layer, The transition temperature of the above-mentioned adhesive layer is above 160°C, and in the above-mentioned adhesive composition, the resin component is a cycloolefin polymer containing a glass transition temperature above 160°C. A method for manufacturing a laminate, which is a method for manufacturing a laminate obtained by laminating a substrate, an adhesive layer, and a support in the order of lamination, wherein the substrate is characterized in that the substrate is formed by sealing elements through a sealing material The sealing body, and the sealing substrate of the rewiring layer on which the above-mentioned elements are actually installed on the flat part of one side of the above-mentioned sealing body, and includes: coating the adhesive composition on the above-mentioned support body, and forming by heating The step of forming the adhesive layer of the above-mentioned adhesive layer, the step of arranging components on the above-mentioned adhesive layer, and the step of sealing the above-mentioned components with a sealing material after the above-mentioned arranging step, in the above-mentioned adhesive composition, the resin component contains A cycloolefin polymer with a glass transition temperature of 100°C or higher, and a multifunctional curable monomer. When the multifunctional curable monomer is polymerized to harden the adhesive layer, the glass transition of the adhesive layer The temperature is above 160°C. A method for manufacturing a laminate, which is a method for manufacturing a laminate in which a substrate, an adhesive layer, and a support are laminated in sequence, It is characterized in that the above-mentioned substrate is a sealing substrate with: a sealing body formed by sealing the components with a sealing material; The adhesive composition is coated on the above-mentioned support body, and the above-mentioned adhesive layer forming step is formed by heating, and the re-wiring layer forming step is formed on the above-mentioned adhesive layer, and the above-mentioned re-wiring layer is formed. In the above-mentioned adhesive composition, The resin component is a cycloolefin polymer with a glass transition temperature of 100°C or higher, and a multifunctional curable monomer. When the multifunctional curable monomer is polymerized to harden the above adhesive layer, the adhesive The glass transition temperature of the layer is above 160°C. The method for manufacturing a laminate according to any one of Claims 7 to 11, wherein the above-mentioned support body is a support body formed of a material that can transmit light, and before the above-mentioned step of forming the adhesive layer, it also includes, using light to irradiate the above-mentioned A step of forming a separation layer on the support by denaturing it to form a separation layer. A substrate processing method, characterized by comprising: the manufacturing method of the laminated body according to claim 12, and irradiating the above-mentioned separation layer with light through the above-mentioned support body to make it become The separation step of separating the above-mentioned substrate from the above-mentioned laminate, and the removal step of removing the above-mentioned adhesive layer remaining on the above-mentioned substrate separated from the above-mentioned laminate by using a cleaning solution after the above-mentioned separation step.

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