TWI762279B - Semiconductor part protective coating and method of fabricating the same - Google Patents

Abstract

A semiconductor part protective coating configured to a semiconductor part is provided. The semiconductor part protective coating includes a first seed layer and a first part protection layer. The first seed layer is deposited on a surface of the semiconductor part. The first part protection layer is deposited on a surface of the first seed layer so that a crystal lattice direction of the surface of the first part protection layer is the same as the crystal lattice direction of the surface of the first seed layer. The thickness of the first part protection layer is 7 times or more than the thickness of the first seed layer. The first part protective layer at the bottom layer has a characteristic direction and grows along the direction when depositing the first part protective layer, so that the first part protective layer presents a single crystal-like structure, thereby increasing the resistance to plasma.

Description

Protective coating for semiconductor parts and method for producing the same

The present invention refers to a protective coating for semiconductor parts and a manufacturing method thereof, in particular to a protective coating for semiconductor parts having a first seed layer and a manufacturing method thereof.

In the semiconductor technology industry, commonly used semiconductor processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), reactive ion etching (RIE, Reactive Ion Etching), panel and automated equipment applications, etc., all use ceramic layers To protect the metal parts in the cavity. Because plasma etching uses electromagnetic energy in a gas containing chemically reactive components, such as fluorine or chlorine, the plasma releases charged ions and strikes the wafer to etch the material and create a chemical reaction. The plasma interacts with the etched material to form volatile or non-volatile residues. Therefore, the ceramic layer above the metal layer of the semiconductor part becomes a good protective layer. In addition, when the semiconductor part is exposed to the fluorine-based plasma, the etched ceramic layer will be fluorinated to generate particles, which will pollute the cavity environment and cause defects in the semiconductor part.

The anti-plasma etch coatings currently used to protect semiconductor parts are mainly plasma sprayed. However, since the typical anti-plasma etching coating is polycrystalline ceramics, the grain boundary etching rate in polycrystalline ceramics is relatively fast, which is likely to cause increased surface roughness and contamination after etching.

As semiconductor technology grows, component miniaturization becomes the greatest focus, with the corresponding increase in susceptibility to defects and stricter tolerances for particles and contaminants. In order to reduce the particle contamination and defects caused by the cavity during the process, the current technology usually focuses on the change of materials such as Y ₂ O ₃ , YF ₃ , YOF, Y ₃ Al ₅ O ₁₂ (YAG), Er ₃ Al ₅ Solid solutions such as O ₁₂ (EAG) and Y ₂ O ₃ -ZrO ₂ or solid solutions containing mainly Y ₂ O ₃ and Al ₂ O ₃ and adding rare earth oxides such as Er ₂ O ₃ and Nd ₂ O _3. Ceramic materials such as CeO ₂ , Sm ₂ O ₃ , Yb ₂ O ₃ , La ₂ O ₃ , Sc ₂ O ₃ , etc. Generally speaking, for the purpose of better resistance to plasma corrosion, the anti-plasma corrosion layer is optional Ceramic materials formed from transition metals of higher quality, such as oxides, nitrides, fluorides of transition metals with atomic numbers 39 to 80 in the periodic table of elements, or transition metal oxides, nitrides or fluorine in different proportions The compound forms an anti-plasma corrosion layer, or forms a multi-layer film type to further enhance its ability to resist the plasma corrosion layer.

However, according to Patent No. I389248, using atomic layer deposition (ALD) to deposit an anti-plasma layer with a lattice direction than deposition methods such as chemical vapor deposition (CVD), physical vapor deposition (PVD) ), the anti-plasma layer formed by plasma spraying (Plasma Thermal Spray) has more protection. However, extremely low deposition rates are required to grow a coating with a lattice orientation. Moreover, when it is necessary to deposit a suitable thickness of the anti-plasma layer, it will consume a lot of time and cost.

Therefore, there is an urgent need for a new fabrication method of a protective coating for semiconductor parts or a change in its own structure to meet the requirements of high product characteristics.

The present invention provides a protective coating for semiconductor parts, the process time of the protective coating for semiconductor parts is short, and the manufacturing cost can be reduced. In addition, the protective coating for the semiconductor part can improve the anti-plasma corrosion property of the semiconductor part so as to reduce the contamination of the semiconductor part.

The semiconductor component protective coating of the present invention is applied to a semiconductor component, and the semiconductor component protective coating includes a first seed layer and a first component protective layer. Wherein, the first seed layer is deposited on the surface of the semiconductor component. In addition, a first part protective layer is deposited on the surface of the first seed layer, so as to The crystal lattice direction of the surface of the first part protective layer is the same as the crystal lattice direction of the surface of the first seed crystal layer. Wherein, the thickness of the protective layer of the first part is 7 times or more than the thickness of the first seed crystal layer.

Another embodiment of the semiconductor component protective coating of the present invention is applied to a semiconductor component. The semiconductor component protective coating includes a first seed layer, an adhesive layer and a first component protective layer. Wherein, the first seed layer is deposited on the surface of the semiconductor component, and the adhesive layer is located between the first seed layer and the semiconductor component. In addition, the first component protective layer is deposited on the surface of the first seed crystal layer, so that the crystal lattice direction of the surface of the first component protective layer is the same as the crystal lattice direction of the surface of the first seed crystal layer. Wherein, the thickness of the protective layer of the first part is 7 times or more than the thickness of the first seed crystal layer.

The above-mentioned semiconductor component protective coating further includes at least one second seed layer and at least one second component protective layer. The second seed layer is deposited on the surface of the first component protective layer, and the second zero layer is deposited on the surface of the first component protective layer. The component protection layer is deposited on the surface of the second seed crystal layer, so that the crystal lattice direction of the surface of the second component protection layer is the same as the crystal lattice direction of the surface of the second seed crystal layer.

In the above-mentioned protective coating for semiconductor parts, the crystal lattice direction of the surface of the second seed layer is different from the crystal lattice direction of the surface of the first seed layer.

In the above-mentioned protective coating for semiconductor parts, the lattice direction of the surface of the protective layer of the second part is different from the lattice direction of the surface of the protective layer of the first part.

In the above-mentioned protective coating for semiconductor parts, the deposition rate of the first part protective layer is 20 times or more the deposition rate of the first seed layer.

In the above-mentioned protective coating for semiconductor parts, the first seed layer is selected from one of oxides, nitrides, borides, fluorides or any combination thereof of transition metal elements with atomic numbers 39 to 80 of the periodic table.

In the above-mentioned protective coating for semiconductor parts, the first protective layer is selected from one of oxides, nitrides, borides, fluorides or any combination of transition metal elements with atomic numbers 39 to 80 of the periodic table.

In the above-mentioned protective coating for semiconductor parts, the material of the first seed layer is different from the material of the protective layer of the first part.

In the above-mentioned protective coating for semiconductor parts, the crystal lattice direction of the surface of the protective layer of the first part is along the closest packing direction.

In the above-mentioned protective coating for semiconductor parts, the thermal expansion coefficient of the protective layer for the first part is between 6.0x10 ^-6 /°C and 8.0x10 ^-6 /°C.

In the above-mentioned protective coating for semiconductor parts, the flexural strength of the protective layer for the first part is greater than 150 MPa.

In the above-mentioned protective coating for semiconductor parts, the material of the adhesive layer is one selected from aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), aluminum fluoride (AlF ₃ ) or any combination thereof.

Another object of the present invention is to provide a method for manufacturing the protective coating for semiconductor parts, which can shorten the production time of the protective coating for semiconductor parts, so that the production cost of the protective coating for semiconductor parts can be reduced. In addition, the protective coating of the semiconductor parts produced by the method can improve the anti-plasma corrosion properties of the semiconductor parts and reduce the contamination of the semiconductor parts.

The manufacturing method of the protective coating for semiconductor parts of the present invention includes the following steps. First, a first seed layer is deposited on the surface of a semiconductor component. Afterwards, a first component protective layer is deposited on the surface of the first seed crystal layer, so that the crystal lattice direction of the surface of the first component protective layer is the same as the crystal lattice direction of the surface of the first seed crystal layer. Wherein, the thickness of the protective layer of the first part is 7 times or more than the thickness of the first seed crystal layer.

In the above-mentioned manufacturing method of the protective coating for semiconductor parts, the deposition rate of the protective layer of the first part is 20 times or more than the deposition rate of the first seed layer.

In the above-mentioned manufacturing method of the protective coating for semiconductor parts, the material of the first seed layer is different from the material of the protective layer of the first part.

In the above-mentioned manufacturing method of the protective coating for semiconductor parts, the lattice direction of the surface of the protective layer of the first part is along the closest packing direction.

In the above-mentioned manufacturing method of the protective coating for semiconductor parts, the thermal expansion coefficient of the protective layer for the first part is between 6.0×10 ^-6 /°C and 8.0×10 ^-6 /°C.

In the above-mentioned manufacturing method of the protective coating for semiconductor components, the flexural strength of the protective coating for the first component is greater than 150 MPa.

The above-mentioned manufacturing method of the protective coating for semiconductor parts further includes the following step after the step of depositing the first seed layer: preheating treatment.

In the above-mentioned manufacturing method of the protective coating for semiconductor parts, the temperature of the preheating treatment is 80°C or more.

The above-mentioned manufacturing method of the protective coating for semiconductor parts further includes the following steps after depositing the first protective coating for the semiconductor parts: temperature-maintaining treatment and cooling treatment.

In the above-mentioned manufacturing method of the protective coating for semiconductor parts, the temperature of the temperature-holding treatment is 80°C or more.

In the above-mentioned manufacturing method of the protective coating for semiconductor parts, the rate of the cooling treatment is 5°C per minute or more than 5°C per minute.

The above-mentioned manufacturing method of the protective coating for semiconductor parts further includes the following steps after the temperature-maintaining treatment and the cooling-down treatment: tempering treatment.

In the above-mentioned manufacturing method of the protective coating for semiconductor parts, the temperature of the tempering treatment is 500°C or more.

1, 2, 3, 4: protective coating for semiconductor parts

11: The first seed layer

11': second seed layer

12: The first part protective layer

12': Second part protective layer

14: Textured ceramic layer

15, 15': Adhesive layer

7: Laser annealing machine

8: Semiconductor parts

S1~S7: Steps

FIG. 1 is a schematic diagram of the semiconductor component protective coating 1 and the semiconductor component 8 of the present embodiment.

FIG. 2 is a schematic diagram illustrating the laser annealing process of the protective coating 1 for semiconductor parts.

FIG. 3 is a schematic diagram of forming the textured ceramic layer 14 .

FIG. 4 is a schematic diagram of a semiconductor component protective coating 2 and a semiconductor component 8 according to another embodiment.

FIG. 5A is a schematic diagram of a semiconductor component protective coating 3 and a semiconductor component 8 according to still another embodiment.

FIG. 5B is a schematic diagram of a semiconductor component protective coating 4 and a semiconductor component 8 according to another embodiment.

FIG. 6 is a flow chart of the manufacturing method of the protective coating for semiconductor parts of the present invention.

Please refer to FIG. 1 . FIG. 1 is a schematic diagram of the semiconductor component protective coating 1 and the semiconductor component 8 of the present embodiment. The semiconductor component protective coating 1 of this embodiment is applied to a semiconductor component 8 , and the semiconductor component protective coating 1 includes a first seed layer 11 having a crystal lattice direction and a first component protective layer 12 . The material of the first seed layer 11 is, for example, one of oxides, nitrides, borides, fluorides or any combination thereof selected from transition metal elements with atomic numbers 39-80 of the periodic table.

In this embodiment, the first seed layer 11 is deposited on the upper surface of the semiconductor component 8 using a low deposition rate process, and the semiconductor component 8 is deposited with at least one first seed layer 11 having a lattice closest packing direction. Specifically, the low deposition rate process is, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), molecular beam epitaxy (MBE), and atomic layer deposition (ALD), and the first seed layer 11 The thickness of the deposited layer is between 0.3um and 8um, the thermal expansion coefficient of the first seed layer 11 is between 6.0x10 ^-6 /°C and 8.0x10 ^-6 /°C, and the flexural strength is between 150MPa and between 400MPa.

In addition, the material of the first part protective layer 12 is, for example, one of oxides, nitrides, borides, fluorides or any combination thereof selected from transition metals with atomic numbers 39-80 of the periodic table. It should be noted that, in other embodiments, the material of the first part protection layer 12 may be different from the material of the first seed layer 11 .

In this embodiment, the first component protective layer 12 is deposited on the upper surface of the first seed layer 11 using a high deposition rate process, such as vacuum plasma spraying (VPS), atmospheric plasma spraying (APS), Suspension Plasma Spraying (SPS), Aerosol Deposition (ADM), etc. It should be noted that the first component protection layer 12 using the high deposition rate process and the first seed layer 11 using the low deposition rate process have the same crystallographic direction. Specifically, the lattice direction of the surface of the first part protective layer 12 is the same as the lattice direction of the surface of the first seed layer 11, and the lattice direction of the surface of the first seed layer 11 is yttrium oxide (Y ₂ O ₃ ) and yttrium aluminum garnet (YAG) For example, the closest packing directions of (2 2 2) and (4 2 0) are formed, so the thickness of the deposited first component protection layer 12 can be in the range of 60um to 200um.

In addition, the thermal expansion coefficient of the first part protective layer 12 is between 6.0×10 ⁻⁶ /°C to 8.0×10 ⁻⁶ /°C, and the flexural strength of the first part protective layer 12 is 150 MPa. If the difference between the expansion coefficients of the first part protective layer 12 and the first seed layer 11 is too large, the temperature may be affected by the temperature during the preheating treatment process, the cooling treatment process (which will be described in detail in the following paragraphs) and even in the etching environment. The sudden change causes cracks in the protective layer 12 of the first part, which reduces the strength of the finished product or causes serious defects. In addition, the function of the first seed layer 11 in this embodiment is to increase the crystallization rate of the first part protection layer 12 and help to form a texture grain structure with a preferred orientation, so as to protect the first part The layer 12 achieves the closest-packed crystal structure to improve the characteristics of anti-plasma corrosion, wherein the deposition rate of the first part protection layer 12 is 20 times or more than the deposition rate of the first seed layer 11, and the first The thickness of the part protective layer 12 is 7 times or more the thickness of the first seed layer 11 . In addition, in a preferred embodiment, the thickness of the first component protective layer 12 is more than 15 times the thickness of the first seed layer 11 , this method can greatly shorten the process time of the semiconductor component protective coating 1 and manufacture High-quality anti-plasma coating.

Please refer to FIG. 2 . FIG. 2 is a schematic diagram illustrating the laser annealing process of the protective coating 1 of the semiconductor part. The protective coating 1 of the semiconductor part of the present embodiment can be used to improve the performance of the anti-plasma layer by means of laser annealing. In detail, the first part protective layer 12 is irradiated with a laser by a laser annealing machine 7, and the high deposition rate layer is triggered by using the low deposition rate layer (the first seed layer 11) as a seed to perform high temperature melting (The first part protective layer 12) grows in a single lattice direction, and then achieves the textured ceramic layer 14 with the closest packing direction (please refer to FIG. 3 , which is a schematic diagram of forming the textured ceramic layer 14 ) .) . Also, during the simultaneous annealing process, the first part protective layer 12 becomes molten to reduce porosity formed by rapid deposition.

Please refer to FIG. 4 . FIG. 4 is a schematic diagram of a semiconductor component protective coating 2 and a semiconductor component 8 according to another embodiment. The difference between the semiconductor component protective coating 2 and the semiconductor component protective coating 1 is that the semiconductor component protective coating 2 further includes an adhesive layer 15 located between the first seed layer 11 and the semiconductor component 8 . Specifically, a densely structured adhesion layer 15 is deposited at a low deposition rate on the semiconductor component 8 (aluminum or anodized component). The material of the adhesive layer 15 can be selected from aluminum oxide (Al ₂ O _{3 )} , aluminum nitride (AlN) or aluminum fluoride (AlF ₃ ), or a combination thereof. The function of the adhesive layer 15 is to strengthen the adhesion between the subsequent first part protective layer 12 and the semiconductor part 8 , the thickness of the deposited adhesive layer 15 can be between 0.1um and 5um, and the thermal expansion coefficient of the adhesive layer 15 is between 6.0 Between x10 ^-6 /°C and 11.0x10 ^-6 /°C, the flexural strength of the adhesive layer 15 is between 300MPa and 700MPa. If the strength is insufficient, there will be a risk in use.

Please refer to FIG. 5A . FIG. 5A is a schematic diagram of a semiconductor component protective coating 3 and a semiconductor component 8 according to still another embodiment. The difference between the semiconductor part protective coating 3 and the semiconductor part protective coating 1 is that the semiconductor part protective coating 3 further includes a second seed layer 11' and a second part protective layer 12'. The second component protective layer 12' is deposited on the upper surface of the second seed crystal layer 11'. The thickness of the ceramic layer deposited on the second component protective layer 12' can be between 40um and 60um. The layer 11 ′ is deposited on the upper surface of the first part protection layer 12 , and the thickness of the ceramic layer deposited on the second seed layer 11 ′ can be between 0.3 μm and 3 μm. Therefore, the protective coating 3 for semiconductor parts is equivalent to stacking two sets of protective coatings 1 for semiconductor parts, so that the crystal texture is better. It should be noted that the material of the second part protective layer 12' and the material of the first part protective layer 12 may be different, and the lattice directions of the two may also be different. Similarly, the material of the second seed layer 11 ′ can also be different from the material of the first seed layer 11 , and the lattice direction of the second seed layer 11 ′ can also be different from that of the first seed layer 11 . direction. In this way, the strength of the semiconductor component protective coating 3 can be further strengthened.

In the above, the semiconductor component protective coating 3 is equivalent to using two sets of semiconductor component protective coatings 1 for stacking, and the combination of the first seed layer 11 and the first component protective layer 12 can be regarded as the first group, the second seed crystal The combination of layer 11' and second part protection layer 12' can be considered a second group. However, in other embodiments, the semiconductor component protective coating 3 can also be stacked with more groups of semiconductor component protective coatings 1 , for example, three or more groups, which can also enhance the strength of the overall coating.

FIG. 5B is a schematic diagram of a semiconductor component protective coating 4 and a semiconductor component 8 according to another embodiment. The difference between the semiconductor component protective coating 4 and the semiconductor component protective coating 3 is that the semiconductor component protective coating 3 further includes an adhesive layer 15 ′, and the adhesive layer 15 ′ is located between the first seed layer 11 and the semiconductor component 8 . The material of the adhesive layer 15 ′ can be selected from aluminum oxide (Al ₂ O _{3 )} , aluminum nitride (AlN) or aluminum fluoride (AlF ₃ ) or a combination thereof. The function of the adhesive layer 15 ′ is also to enhance the adhesion between the subsequent first component protective layer 12 and the semiconductor component 8 .

To sum up, the process time of the protective coating for semiconductor parts of the present invention is short, and the manufacturing cost can be reduced. In addition, the protective coating for the semiconductor part can improve the anti-plasma corrosion property of the semiconductor part so as to reduce the contamination of the semiconductor part.

Please refer to FIG. 6 . FIG. 6 is a flow chart of the manufacturing method of the protective coating for semiconductor parts of the present invention. The manufacturing method of the protective coating for semiconductor parts includes the following steps: First, referring to step S1, a semiconductor component 8 is provided, and the semiconductor component 8 is, for example, aluminum or an anodized component.

After that, referring to step S2 , an adhesive layer 15 is deposited on the surface of the semiconductor component 8 .

After that, referring to step S3 , a first seed layer 11 is deposited on the surface of the adhesive layer 15 . However, in other embodiments, step S2 may be omitted, and there is no need to deposit the adhesive layer 15 on the surface of the semiconductor component 8 . Therefore, the first seed layer 11 is deposited on the surface of the semiconductor component 8 . Also, the surface of the first seed layer 11 has a lattice direction.

After that, please refer to step S4 to perform preheating treatment. The temperature of the preheating treatment can be 80°C or above, and the preferred temperature of the preheating treatment is above 100°C.

After that, please refer to step S5 , deposit a first component protective layer 12 on the surface of the first seed layer 11 , so that the crystal lattice direction of the surface of the first component protective layer 12 is the same as that of the first seed layer 11 . The lattice orientation of the surface. It is worth noting that the thickness of the first part protective layer 12 is 7 times or more than the thickness of the first seed layer 11 .

After that, please refer to step S6 to perform the temperature-maintaining treatment and the cooling-down treatment. Wherein, the temperature of the temperature-maintaining treatment can be 80°C or above, preferably the temperature of the temperature-maintaining treatment is 100°C or above, and the upper limit is 300°C. The holding time is more than 1 minute. In addition, the rate of cooling treatment is 5°C per minute or lower than 5°C per minute, and the slower the cooling rate, the better the crystallization effect.

After that, referring to step S7, a tempering treatment is performed, and the temperature of the tempering treatment is 500°C or above. Specifically, through the subsequent heat treatment process (tempering treatment), the crystallographic orientation and anti-plasma properties of the film layer are improved. Taking laser annealing as an example: the sintering effect is formed by melting the anti-plasma layer at high temperature, and the first The seed layer 11 (intermediate layer) acts as a seed to trigger the growth of ceramics in a single crystal lattice direction, preferably a textured ceramic layer whose crystallographic direction is the closest-packed direction. The power of the laser annealing laser is between 10W and 100W so that the surface temperature of the film is kept at 500℃ or above. If the laser power is too low, there will be no improvement effect. If the laser power is too high, it may There are film cracks, and the surface roughness of the first part protective layer 12 after laser annealing is between 3um and 6um.

To sum up, through the technical means adopted in the present invention, an anti-plasma layer with a certain crystallographic orientation can be produced at a lower cost, and the anti-plasma capability in a plasma environment can be improved.

1: Protective coating for semiconductor parts

11: The first seed layer

12: The first part protective layer

8: Semiconductor parts

Claims (26)

A protective coating for semiconductor parts, applied to a semiconductor part, the protective coating for semiconductor parts comprises: a first seed layer, deposited on the surface of the semiconductor part; and a first part protective layer, deposited on the first The surface of the seed layer, so that the lattice direction of the surface of the first part protective layer is the same as the lattice direction of the surface of the first seed layer; wherein, the thickness of the first part protective layer is the 7 times or more the thickness of a seed layer. A semiconductor component protective coating, applied to a semiconductor component, the semiconductor component protective coating comprising: a first seed layer deposited on the surface of the semiconductor component; an adhesive layer located on the first seed layer and the semiconductor component between parts; and a first part protective layer, deposited on the surface of the first seed layer, so that the crystal lattice direction of the surface of the first part protective layer is the same as that of the surface of the first seed layer Lattice direction; wherein, the thickness of the first part protective layer is 7 times or more than the thickness of the first seed layer. The semiconductor component protective coating as claimed in claim 1 or claim 2, further comprising: at least one second seed layer deposited on the surface of the first component protective layer; and at least one second component protective layer, and deposited on the surface of the second seed crystal layer, so that the crystal lattice direction of the surface of the second component protection layer is the same as the crystal lattice direction of the surface of the second seed crystal layer. The protective coating for semiconductor parts as claimed in claim 3, wherein the crystal lattice direction of the surface of the second seed layer is different from the crystal lattice direction of the surface of the first seed layer. The protective coating for semiconductor parts as claimed in claim 3, wherein the lattice direction of the surface of the second part protective layer is different from the lattice direction of the surface of the first part protective layer. The protective coating for semiconductor parts as claimed in claim 1 or claim 2, wherein the deposition rate of the first part protective layer is 20 times or more than the deposition rate of the first seed layer. The protective coating for semiconductor parts according to claim 1 or claim 2, wherein the first seed layer is selected from oxides, nitrides, borides, fluorides of transition metal elements with atomic numbers 39-80 of the periodic table of elements one or any combination thereof. The protective coating for semiconductor parts according to claim 1 or claim 2, wherein the first protective layer is selected from oxides, nitrides, borides, fluorines of transition metal elements with atomic numbers 39-80 in the periodic table of elements one or any combination thereof. The protective coating for semiconductor parts as claimed in claim 1 or claim 2, wherein the material of the first seed layer is different from the material of the first part protective layer. The protective coating for semiconductor parts according to claim 1 or claim 2, wherein the crystal lattice direction of the surface of the first part protective layer is along the closest packing direction. The protective coating for semiconductor parts as claimed in claim 1 or claim 2, wherein the thermal expansion coefficient of the first part protective layer is between 6.0x10 ^-6 /°C and 8.0x10 ^-6 /°C. The semiconductor part protective coating according to claim 1 or claim 2, wherein the flexural strength of the first part protective layer is greater than 150 MPa. The protective coating for semiconductor parts as claimed in claim 2, wherein the material of the adhesive layer is one selected from aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), aluminum fluoride (AlF ₃ ) or any one thereof combination. A method for manufacturing a protective coating for a semiconductor component, comprising: (a1) depositing a first seed layer on the surface of a semiconductor component; and (b1) depositing a first component protective layer on the surface of the first seed layer , so that the lattice direction of the surface of the first part protective layer is the same as the lattice direction of the surface of the first seed layer; wherein, the thickness of the first part protective layer is the thickness of the first seed layer 7 times or more the thickness. The method for manufacturing a protective coating for a semiconductor component as claimed in claim 14, wherein the deposition rate of the first component protective layer is 20 times or more than the deposition rate of the first seed layer. The manufacturing method of the protective coating for semiconductor parts as claimed in claim 14, wherein the material of the first seed layer is different from the material of the protective layer of the first part. The manufacturing method of the protective coating for semiconductor parts as claimed in claim 14, wherein the crystal lattice direction of the surface of the protective layer for the first part is along the closest packing direction. The method for manufacturing a protective coating for semiconductor parts as claimed in claim 14, wherein the thermal expansion coefficient of the first protective layer for parts is between 6.0x10 ^-6 /°C and 8.0x10 ^-6 /°C. The method for manufacturing a protective coating for semiconductor parts as claimed in claim 14, wherein the flexural strength of the first protective layer for parts is greater than 150 MPa. The method for manufacturing a protective coating for a semiconductor part according to claim 14, wherein after the step (a1), the method further comprises: (a2) performing a preheating treatment. The method for manufacturing a protective coating for a semiconductor part as claimed in claim 20, wherein the temperature of the preheating treatment is 80°C or higher. The method for manufacturing a protective coating for a semiconductor part according to claim 14, wherein after the step (b1), the method further comprises: (b2) performing a temperature-maintaining treatment and a cooling treatment. The method for manufacturing a protective coating for semiconductor parts as claimed in claim 22, wherein the temperature of the temperature-holding treatment is 80°C or higher. The method for manufacturing a protective coating for semiconductor parts as claimed in claim 22, wherein the rate of the cooling treatment is 5°C per minute or lower than 5°C per minute. The method for manufacturing a protective coating for a semiconductor part according to claim 22, wherein after the step (b2), the method further comprises: (b3) performing a tempering treatment. The manufacturing method of the protective coating for semiconductor parts as claimed in claim 25, wherein the temperature of the tempering treatment is 500°C or higher.

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