TWI761433B - Photosensitive resin composition, cured film, method for producing the same, and electronic component - Google Patents

Photosensitive resin composition, cured film, method for producing the same, and electronic component Download PDF

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TWI761433B
TWI761433B TW107102505A TW107102505A TWI761433B TW I761433 B TWI761433 B TW I761433B TW 107102505 A TW107102505 A TW 107102505A TW 107102505 A TW107102505 A TW 107102505A TW I761433 B TWI761433 B TW I761433B
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resin composition
photosensitive resin
compound
film
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TW201831999A (en
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菅野貴美幸
山口虎彦
多田羅了嗣
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日商Jsr股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00Chemical modification by after-treatment
    • C08F8/30Introducing nitrogen atoms or nitrogen-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G83/00Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

Abstract

本發明兼顧自含有具有酚性羥基的樹脂作為鹼可溶性樹脂的感光性樹脂組成物所獲得的硬化膜的耐化學品性與耐龜裂性。一種感光性樹脂組成物,其含有:具有酚性羥基的樹脂(A)、光酸產生劑(B)、以及含馬來醯亞胺基的化合物(C)。The present invention achieves both chemical resistance and crack resistance of a cured film obtained from a photosensitive resin composition containing a resin having a phenolic hydroxyl group as an alkali-soluble resin. A photosensitive resin composition containing a resin (A) having a phenolic hydroxyl group, a photoacid generator (B), and a maleimide group-containing compound (C).

Description

感光性樹脂組成物、硬化膜及其製造方法以及電子零件Photosensitive resin composition, cured film, method for producing the same, and electronic component

本發明是有關於一種較佳地用於電子零件等所具有的表面保護膜及層間絕緣膜等的形成的感光性樹脂組成物,進而是有關於一種由所述組成物所形成的硬化膜及其製造方法、以及具有所述硬化膜的電子零件。The present invention relates to a photosensitive resin composition preferably used for the formation of a surface protective film, an interlayer insulating film, etc., which electronic parts and the like have, and further relates to a cured film formed from the composition and the like. Its manufacturing method, and the electronic component which has the said cured film.

先前,作為形成用於電子零件中的半導體元件中的表面保護膜及層間絕緣膜等時所使用的材料,提出有各種感光性樹脂組成物。例如,研究了含有具有酚性羥基的樹脂作為鹼可溶性樹脂的感光性樹脂組成物(專利文獻1及專利文獻2)。 [現有技術文獻] [專利文獻]Conventionally, various photosensitive resin compositions have been proposed as materials used for forming surface protective films, interlayer insulating films, and the like in semiconductor elements used in electronic components. For example, a photosensitive resin composition containing a resin having a phenolic hydroxyl group as an alkali-soluble resin has been studied (Patent Document 1 and Patent Document 2). [Prior Art Document] [Patent Document]

[專利文獻1]日本專利特開2014-186300號公報 [專利文獻2]日本專利特開2013-210606號公報[Patent Document 1] Japanese Patent Laid-Open No. 2014-186300 [Patent Document 2] Japanese Patent Laid-Open No. 2013-210606

於含有具有酚性羥基的樹脂作為鹼可溶性樹脂的感光性樹脂組成物中,存在難以兼顧自感光性樹脂組成物所獲得的硬化膜的耐化學品性與耐龜裂性的課題,推斷其在於以下理由。若於具有酚性羥基的樹脂的交聯中例如僅使用環氧系交聯劑,則於交聯反應中藉由環氧環的開環而產生羥基,另外若僅使用羥甲基系交聯劑,則於交聯反應後亦殘存酚性羥基,故耐化學品性變差。另一方面,為了提升耐化學品性,若使用環氧系交聯劑或羥甲基系交聯劑提高硬化膜的交聯密度,則硬化膜的伸長物性降低,耐龜裂性變差。In a photosensitive resin composition containing a resin having a phenolic hydroxyl group as an alkali-soluble resin, it is difficult to achieve both chemical resistance and crack resistance of the cured film obtained from the photosensitive resin composition. The following reasons. When, for example, only an epoxy-based crosslinking agent is used for the crosslinking of a resin having a phenolic hydroxyl group, a hydroxyl group is generated by ring-opening of the epoxy ring during the crosslinking reaction, and if only a methylol-based crosslinking agent is used If the agent is used, the phenolic hydroxyl group will remain after the cross-linking reaction, so the chemical resistance will be deteriorated. On the other hand, in order to improve chemical resistance, if the crosslinking density of a cured film is increased using an epoxy-based crosslinking agent or a methylol-based crosslinking agent, the elongation properties of the cured film will decrease, resulting in poor crack resistance.

本發明者等人為了解決所述課題而進行了努力研究。結果發現包含具有酚性羥基的樹脂的下述組成的感光性樹脂組成物可解決所述課題,從而完成了本發明。The inventors of the present invention have made diligent studies in order to solve the above-mentioned problems. As a result, the photosensitive resin composition of the following composition containing the resin which has a phenolic hydroxyl group discovered that the said subject can be solved, and completed this invention.

本發明例如為以下[1]~[8]。 [1] 一種感光性樹脂組成物,其含有:具有酚性羥基的樹脂(A)、光酸產生劑(B)、以及含馬來醯亞胺基的化合物(C)。The present invention is, for example, the following [1] to [8]. [1] A photosensitive resin composition comprising: a resin (A) having a phenolic hydroxyl group, a photoacid generator (B), and a maleimide group-containing compound (C).

[2] 如所述[1]所述的感光性樹脂組成物,其中,所述含馬來醯亞胺基的化合物(C)包含具有兩個以上馬來醯亞胺基的化合物(C1)。[2] The photosensitive resin composition according to the above [1], wherein the maleimide group-containing compound (C) includes a compound (C1) having two or more maleimide groups .

[3] 如所述[1]或[2]所述的感光性樹脂組成物,其進而含有交聯劑(D)(其中,將含馬來醯亞胺基的化合物(C)除外)。[3] The photosensitive resin composition according to the above [1] or [2], which further contains a crosslinking agent (D) (however, the maleimide group-containing compound (C) is excluded).

[4] 如所述[3]所述的感光性樹脂組成物,其中,所述交聯劑(D)包含選自環氧系交聯劑(D1)、及具有至少兩個由-CH2 OR表示的基(所述式中,R為氫原子、碳數1~10的烷基或碳數2~10的醯基)的交聯劑(D2)中的至少一種交聯劑。 [4] The photosensitive resin composition according to the above [3], wherein the crosslinking agent (D) contains an epoxy-based crosslinking agent (D1), and has at least two components consisting of -CH 2 At least one crosslinking agent among the crosslinking agents (D2) of the group represented by OR (in the above formula, R is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an acyl group having 2 to 10 carbon atoms).

[5]如所述[1]至[4]中任一項所述的感光性樹脂組成物,其中,所述光酸產生劑(B)包含醌二疊氮化合物(B1)。 [5] The photosensitive resin composition according to any one of the above [1] to [4], wherein the photoacid generator (B) contains a quinonediazide compound (B1).

[6]一種硬化膜的製造方法,其包括:於支撐體上形成如所述[1]至[5]中任一項所述的感光性樹脂組成物的樹脂膜的步驟;對所述樹脂膜進行曝光的步驟;藉由鹼性顯影液對所述樹脂膜進行顯影並形成圖案化樹脂膜的步驟;以及對所述圖案化樹脂膜進行加熱的步驟。 [6] A method for producing a cured film, comprising: forming a resin film of the photosensitive resin composition according to any one of the above [1] to [5] on a support; The step of exposing the film; the step of developing the resin film with an alkaline developer to form a patterned resin film; and the step of heating the patterned resin film.

[7]一種硬化膜,其是由如所述[1]至[5]中任一項所述的感光性樹脂組成物所形成。 [7] A cured film formed from the photosensitive resin composition according to any one of the above [1] to [5].

[8]一種電子零件,其具有所述[7]所述的硬化膜。 [8] An electronic component having the cured film according to the above [7].

根據本發明,可兼顧自含有具有酚性羥基的樹脂作為鹼可溶性樹脂的感光性樹脂組成物所獲得的硬化膜的耐化學品性與耐龜裂性。 According to this invention, the chemical resistance and crack resistance of the cured film obtained from the photosensitive resin composition containing the resin which has a phenolic hydroxyl group as an alkali-soluble resin can be made compatible.

以下,對於用以實施本發明的形態,亦包含較佳態樣在內進行說明。 〔感光性樹脂組成物〕 本發明的感光性樹脂組成物含有以下所說明的具有酚性羥基的樹脂(A)、光酸產生劑(B)、以及含馬來醯亞胺基的化合物(C)。Hereinafter, the embodiment for implementing the present invention will also be described including preferred embodiments. [Photosensitive resin composition] The photosensitive resin composition of the present invention contains a resin (A) having a phenolic hydroxyl group, a photoacid generator (B), and a maleimide group-containing compound (C) described below. ).

〈樹脂(A)〉 具有酚性羥基的樹脂(A)例如可列舉:含有源於具有酚性羥基的自由基聚合性單體的結構單元的聚合物(a1)(以下,亦稱為「聚合物(a1)」)、酚醛清漆樹脂(a2)、聚苯并噁唑前驅物(a3)、具有酚性羥基的聚醯亞胺、苯酚-茬二醇(phenol-xylylene glycol)縮合樹脂、甲酚-茬二醇縮合樹脂、苯酚-二環戊二烯縮合樹脂。該些之中,就組成物的硬化性的觀點而言,較佳為聚合物(a1)、酚醛清漆樹脂(a2)、及聚苯并噁唑前驅物(a3),更佳為聚合物(a1)。 樹脂(A)可使用一種,或者可併用兩種以上來使用。<Resin (A)> Examples of the resin (A) having a phenolic hydroxyl group include a polymer (a1) (hereinafter, also referred to as "polymerization") containing a structural unit derived from a radically polymerizable monomer having a phenolic hydroxyl group. (a1)」), novolac resin (a2), polybenzoxazole precursor (a3), polyimide with phenolic hydroxyl group, phenol-xylylene glycol condensation resin, methyl alcohol Phenol-stubble diol condensation resin, phenol-dicyclopentadiene condensation resin. Among these, from the viewpoint of the curability of the composition, the polymer (a1), the novolak resin (a2), and the polybenzoxazole precursor (a3) are preferred, and the polymer (a3) is more preferred. a1). One type of resin (A) may be used, or two or more types may be used in combination.

《聚合物(a1)》 聚合物(a1)例如可列舉:具有酚性羥基的自由基聚合性單體的均聚物或共聚物、具有酚性羥基的自由基聚合性單體與其他自由基聚合性單體的共聚物。<<Polymer (a1)>> The polymer (a1) includes, for example, a homopolymer or copolymer of a radically polymerizable monomer having a phenolic hydroxyl group, a radically polymerizable monomer having a phenolic hydroxyl group, and other radicals. Copolymers of polymerizable monomers.

具有酚性羥基的自由基聚合性單體例如可列舉:鄰羥基苯乙稀、間羥基苯乙稀、對羥基苯乙稀、鄰異丙烯基苯酚、間異丙烯基苯酚、對異丙烯基苯酚等羥基苯乙稀系單體;羥基苯乙稀系單體的鍵結於芳香環碳上的一個或兩個以上氫原子經烷基、烷氧基、鹵素、鹵代烷基、硝基或氰基取代而成的單體;乙烯基對苯二酚、5-乙烯基五倍子酚、6-乙烯基五倍子酚。另外,亦可列舉所述單體的酚性羥基經烷基或矽烷基等保護而成的單體。於使用將所述酚性羥基保護而成的單體的情況下,可藉由形成聚合物之後除去該保護而成為具有酚性羥基的聚合物(a1)。所述單體可使用一種,或者可併用兩種以上來使用。Examples of the radically polymerizable monomer having a phenolic hydroxyl group include o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, o-isopropenyl phenol, m-isopropenyl phenol, and p-isopropenyl phenol. Hydroxystyrene-based monomers; Hydroxystyrene-based monomers have one or more hydrogen atoms bonded to the aromatic ring carbon through alkyl, alkoxy, halogen, haloalkyl, nitro or cyano Substituted monomers; vinyl hydroquinone, 5-vinyl gallic phenol, 6-vinyl gallic phenol. Moreover, the monomer which the phenolic hydroxyl group of the said monomer was protected by an alkyl group, a silyl group, etc. can also be mentioned. When using the monomer which protected the said phenolic hydroxyl group, it can become the polymer (a1) which has a phenolic hydroxyl group by removing this protection after forming a polymer. These monomers may be used alone, or two or more of them may be used in combination.

其他自由基聚合性單體例如可列舉:苯乙烯、α-甲基苯乙烯、鄰乙烯基苄基縮水甘油醚、間乙烯基苄基縮水甘油醚、對乙烯基苄基縮水甘油醚等苯乙烯系單體;苯乙烯系單體的鍵結於芳香環碳上的一個或兩個以上氫原子經烷基、烷氧基、鹵素、鹵代烷基、硝基或氰基取代而成的單體;丁二烯、異戊二烯、氯丁二烯等二烯;不飽和單羧酸、不飽和二羧酸及其半酯等不飽和羧酸;鄰乙烯基苯甲酸、間乙烯基苯甲酸、對乙烯基苯甲酸或者該些單體的鍵結於芳香環碳上的一個或兩個以上氫原子經烷基、烷氧基、鹵素、鹵代烷基、硝基或氰基取代而成的單體;(甲基)丙烯酸縮水甘油酯等(甲基)丙烯酸酯、(甲基)丙烯腈、丙烯醛(acrolein)、氯乙烯、偏二氯乙烯、氟乙烯、偏二氟乙烯、N-乙烯基吡咯啶酮、乙烯基吡啶、乙酸乙烯酯、N-苯基馬來醯亞胺、N-環己基馬來醯亞胺、N-(甲基)丙烯醯氧基鄰苯二甲醯亞胺、(甲基)丙烯酸(3,4-環氧環己基)甲酯。所述單體可使用一種,或者可併用兩種以上來使用。Examples of other radically polymerizable monomers include styrenes such as styrene, α-methylstyrene, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether. Monomers; monomers in which one or more hydrogen atoms of styrene-based monomers bonded to aromatic ring carbons are substituted by alkyl, alkoxy, halogen, haloalkyl, nitro or cyano groups; Dienes such as butadiene, isoprene, and chloroprene; unsaturated carboxylic acids such as unsaturated monocarboxylic acids, unsaturated dicarboxylic acids and their half esters; Monomers in which p-vinyl benzoic acid or these monomers have one or more hydrogen atoms bonded to aromatic ring carbons substituted with alkyl, alkoxy, halogen, haloalkyl, nitro or cyano groups ; (Meth)acrylates such as glycidyl (meth)acrylate, (meth)acrylonitrile, acrolein, vinyl chloride, vinylidene chloride, vinyl fluoride, vinylidene fluoride, N-vinyl Pyrrolidone, vinylpyridine, vinyl acetate, N-phenylmaleimide, N-cyclohexylmaleimide, N-(meth)acryloyloxyphthalimide, (3,4-Epoxycyclohexyl)methyl (meth)acrylate. These monomers may be used alone, or two or more of them may be used in combination.

於所述自由基聚合性單體的聚合物中,相對於源於具有酚性羥基的自由基聚合性單體的結構單元與源於其他自由基聚合性單體的結構單元的含有比例的合計100莫耳%,源於具有酚性羥基的自由基聚合性單體的結構單元的含有比例較佳為30莫耳%以上,更佳為40莫耳%~95莫耳%。In the polymer of the radical polymerizable monomer, the sum of the content ratios relative to the structural unit derived from the radical polymerizable monomer having a phenolic hydroxyl group and the structural unit derived from the other radical polymerizable monomer 100 mol %, the content ratio of the structural unit derived from the radically polymerizable monomer having a phenolic hydroxyl group is preferably 30 mol % or more, more preferably 40 mol % to 95 mol %.

所述自由基聚合性單體的聚合物較佳為可列舉:聚對羥基苯乙烯、間羥基苯乙烯/對羥基苯乙烯共聚物、對羥基苯乙烯/苯乙烯共聚物、對羥基苯乙烯/對乙烯基苄基縮水甘油醚/苯乙烯共聚物、對羥基苯乙烯/甲基丙烯酸(3,4-環氧環己基)甲酯共聚物、對羥基苯乙烯/甲基丙烯酸(3,4-環氧環己基)甲酯/苯乙烯共聚物等羥基苯乙烯系聚合物。Preferred examples of the polymer of the radically polymerizable monomer include poly-p-hydroxystyrene, m-hydroxystyrene/p-hydroxystyrene copolymer, p-hydroxystyrene/styrene copolymer, p-hydroxystyrene/ p-Vinylbenzyl glycidyl ether/styrene copolymer, p-hydroxystyrene/(3,4-epoxycyclohexyl)methyl methacrylate copolymer, p-hydroxystyrene/methacrylic acid (3,4- Hydroxystyrene-based polymers such as epoxycyclohexyl) methyl ester/styrene copolymers.

《酚醛清漆樹脂(a2)》 酚醛清漆樹脂(a2)例如可藉由在酸觸媒的存在下使酚類與醛類縮合而獲得。酚類例如可列舉:苯酚、鄰甲酚、間甲酚、對甲酚、鄰乙基苯酚、間乙基苯酚、對乙基苯酚、鄰丁基苯酚、間丁基苯酚、對丁基苯酚、2,3-二甲苯酚、2,4-二甲苯酚、2,5-二甲苯酚、2,6-二甲苯酚、3,4-二甲苯酚、3,5-二甲苯酚、2,3,5-三甲基苯酚、3,4,5-三甲基苯酚、鄰苯二酚、間苯二酚(resorcinol)、五倍子酚、α-萘酚、β-萘酚。醛類例如可列舉:甲醛、多聚甲醛、乙醛、苯甲醛、柳醛。<<Novolak Resin (a2)>> The novolak resin (a2) can be obtained, for example, by condensing phenols and aldehydes in the presence of an acid catalyst. Examples of phenols include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, p-butylphenol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2, 3,5-trimethylphenol, 3,4,5-trimethylphenol, catechol, resorcinol, gallic phenol, α-naphthol, β-naphthol. Examples of aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, benzaldehyde, and sulfalaldehyde.

酚醛清漆樹脂(a2)的具體例可列舉:苯酚/甲醛縮合酚醛清漆樹脂、甲酚/甲醛縮合酚醛清漆樹脂、甲酚/柳醛縮合酚醛清漆樹脂、苯酚-萘酚/甲醛縮合酚醛清漆樹脂、酚醛清漆樹脂經丁二烯系聚合物等具有聚合性乙烯基的橡膠狀聚合物(polymer)改質而成的樹脂(例如,日本專利特開2010-015101號公報中記載的樹脂)。Specific examples of the novolak resin (a2) include: phenol/formaldehyde condensed novolak resin, cresol/formaldehyde condensed novolak resin, cresol/salalaldehyde condensed novolak resin, phenol-naphthol/formaldehyde condensed novolak resin, A novolak resin is a resin in which a rubber-like polymer (polymer) having a polymerizable vinyl group, such as a butadiene-based polymer, is modified (for example, the resin described in Japanese Patent Laid-Open No. 2010-015101).

《聚苯并噁唑前驅物(a3)》 聚苯并噁唑前驅物(a3)例如可列舉具有式(1)所示的結構單元的聚合物。聚苯并噁唑前驅物(a3)可為具有一種結構單元的聚合物,亦可為具有兩種以上結構單元的聚合物。<<Polybenzoxazole Precursor (a3)>> The polybenzoxazole precursor (a3) includes, for example, a polymer having a structural unit represented by formula (1). The polybenzoxazole precursor (a3) may be a polymer having one structural unit or a polymer having two or more structural units.

[化1]

Figure 02_image001
式(1)中,X為2價的有機基,Y為4價的含芳香環的基,鍵結於Y的N與OH形成對,各對的N與OH鍵結於同一芳香環上的相鄰的碳原子。[hua 1]
Figure 02_image001
In formula (1), X is a divalent organic group, Y is a tetravalent aromatic ring-containing group, N and OH bonded to Y form pairs, and N and OH of each pair are bonded to the same aromatic ring. adjacent carbon atoms.

X中的2價的有機基例如可列舉:可經鹵化的碳數6~20的伸芳基、由式(g1):-Ar1 -R1 -Ar1 -表示的2價的基、碳數1~10的烷烴二基、以及碳數3~20的環烷烴二基。式(g1)中,Ar1 分別獨立地為可經鹵化的碳數6~20的伸芳基,R1 為直接鍵或2價的基。2價的基例如可列舉:氧原子、硫原子、磺醯基、羰基、可經鹵化的碳數1~10的烷烴二基。The divalent organic group in X includes, for example, a halogenated arylidene group having 6 to 20 carbon atoms, a divalent group represented by the formula (g1): -Ar 1 -R 1 -Ar 1 -, carbon Alkanediyl having 1 to 10 carbons, and cycloalkanediyl having 3 to 20 carbons. In the formula (g1), Ar 1 is each independently a halogenated arylidene group having 6 to 20 carbon atoms, and R 1 is a direct bond or a divalent group. Examples of the divalent group include an oxygen atom, a sulfur atom, a sulfonyl group, a carbonyl group, and a halogenated alkanediyl group having 1 to 10 carbon atoms.

可經鹵化的碳數6~20的伸芳基例如可列舉:伸苯基、甲基伸苯基、第三丁基伸苯基、氟伸苯基、氯伸苯基、溴伸苯基、伸萘基。碳數1~10的烷烴二基例如可列舉:亞甲基、乙烷-1,2-二基。可經鹵化的碳數1~10的烷烴二基例如可列舉:亞甲基、二甲基亞甲基、雙(三氟甲基)亞甲基。碳數3~20的環烷烴二基例如可列舉:環丁烷二基、環戊烷二基、環己烷二基。Examples of arylidene groups having 6 to 20 carbon atoms that may be halogenated include phenylene groups, methylphenylene groups, tert-butylphenylene groups, fluorophenylene groups, chlorophenylene groups, bromophenylene groups, phenylene groups naphthyl. Examples of the alkanediyl group having 1 to 10 carbon atoms include a methylene group and an ethane-1,2-diyl group. Examples of the halogenated alkanediyl group having 1 to 10 carbon atoms include a methylene group, a dimethylmethylene group, and a bis(trifluoromethyl)methylene group. As a C3-C20 cycloalkanediyl group, a cyclobutanediyl group, a cyclopentanediyl group, and a cyclohexanediyl group are mentioned, for example.

Y中的4價的含芳香環的基例如可列舉:苯環、萘環、蒽環等源於芳香族烴的4價的基、由式(g2):>Ar2 -R2 -Ar2 <表示的4價的基。Examples of the tetravalent aromatic ring - containing group in Y include tetravalent groups derived from aromatic hydrocarbons such as a benzene ring, a naphthalene ring, an anthracene ring, and the like ; The tetravalent base indicated by <.

式(g2)中,Ar2 分別獨立地為苯環、萘環、蒽環等源於芳香族烴的3價的基,R2 為直接鍵或2價的基。2價的基例如可列舉:氧原子、硫原子、磺醯基、羰基、可經鹵化的碳數1~10的烷烴二基。In formula (g2), Ar 2 is each independently a trivalent group derived from an aromatic hydrocarbon such as a benzene ring, a naphthalene ring, and an anthracene ring, and R 2 is a direct bond or a divalent group. Examples of the divalent group include an oxygen atom, a sulfur atom, a sulfonyl group, a carbonyl group, and a halogenated alkanediyl group having 1 to 10 carbon atoms.

形成Y或Ar2 的芳香族烴例如可列舉:苯、萘、蒽等碳數6~20的芳香族烴。可經鹵化的碳數1~10的烷烴二基例如可列舉:亞甲基、二甲基亞甲基、雙(三氟甲基)亞甲基。Examples of the aromatic hydrocarbons that form Y or Ar 2 include aromatic hydrocarbons having 6 to 20 carbon atoms such as benzene, naphthalene, and anthracene. Examples of the halogenated alkanediyl group having 1 to 10 carbon atoms include a methylene group, a dimethylmethylene group, and a bis(trifluoromethyl)methylene group.

於聚苯并噁唑前驅物(a3)中,式(1)所示的結構單元的含有比例通常為70質量%以上,較佳為80質量%以上,更佳為90質量%以上。所述含有比例例如可藉由核磁共振法測定。In the polybenzoxazole precursor (a3), the content ratio of the structural unit represented by the formula (1) is usually 70% by mass or more, preferably 80% by mass or more, and more preferably 90% by mass or more. The content ratio can be measured, for example, by a nuclear magnetic resonance method.

《其他樹脂》 樹脂(A)的其他具體例可列舉:日本專利特開2002-139835號公報、日本專利特開2004-240144號公報、日本專利特開2007-056108號公報、日本專利特開2010-102271號公報、日本專利特開2007-192936號公報、日本專利特開2009-237125號公報以及日本專利特開2012-123378號公報中記載的樹脂。樹脂(A)的製造方法的詳細內容亦記載於該些文獻中。<<Other Resins>> Other specific examples of the resin (A) include: Japanese Patent Laid-Open No. 2002-139835, Japanese Patent Laid-Open No. 2004-240144, Japanese Patent Laid-Open No. 2007-056108, and Japanese Patent Laid-Open No. 2010 - Resins described in Japanese Patent Laid-Open No. 102271, Japanese Patent Laid-Open No. 2007-192936, Japanese Patent Laid-Open No. 2009-237125, and Japanese Patent Laid-Open No. 2012-123378. The details of the manufacturing method of resin (A) are also described in these documents.

《樹脂(A)的構成》 就感光性樹脂組成物的解析性、硬化膜的彈性係數及耐龜裂性的觀點而言,樹脂(A)的藉由凝膠滲透層析(Gel Permeation Chromatography,GPC)法測定的重量平均分子量(Mw)以聚苯乙烯換算計通常為1,000~200,000,較佳為2,000~100,000,進而佳為5,000~50,000。Mw的測定方法的詳細內容如實施例中所記載般。<<Constitution of Resin (A)>> From the viewpoints of the analytical properties of the photosensitive resin composition, the elastic modulus of the cured film, and the crack resistance, the resin (A) is subjected to gel permeation chromatography (Gel Permeation Chromatography, The weight average molecular weight (Mw) measured by the GPC) method is usually 1,000 to 200,000 in terms of polystyrene, preferably 2,000 to 100,000, and more preferably 5,000 to 50,000. Details of the method for measuring Mw are as described in Examples.

樹脂(A)較佳為於2.38質量%濃度的四甲基氫氧化銨水溶液(23℃)中溶解0.001 mg/ml以上的樹脂。 樹脂(A)的含有比例相對於本發明的感光性樹脂組成物的固體成分100質量%通常為30質量%~95質量%,較佳為40質量%~90質量%,進而佳為50質量%~85質量%。若樹脂(A)的含有比例處於所述範圍,則存在可獲得能夠形成解析度優異的硬化膜的感光性樹脂組成物的傾向。固體成分是指除後述溶劑以外的所有成分。The resin (A) is preferably a resin in which 0.001 mg/ml or more is dissolved in an aqueous tetramethylammonium hydroxide solution (23° C.) having a concentration of 2.38% by mass. The content of the resin (A) is usually 30 to 95% by mass, preferably 40 to 90% by mass, and more preferably 50% by mass relative to 100% by mass of the solid content of the photosensitive resin composition of the present invention. ~85% by mass. When the content rate of resin (A) is in the said range, there exists a tendency for the photosensitive resin composition which can form the cured film excellent in resolution to be obtained. The solid content refers to all components other than the solvent described later.

〈光酸產生劑(B)〉 本發明的感光性樹脂組成物含有光酸產生劑(B)。 光酸產生劑(B)為藉由包含光照射的處理產生酸的化合物。藉由對由本發明的感光性樹脂組成物所形成的樹脂膜進行的曝光處理,基於光酸產生劑(B)而於曝光部產生酸,基於該酸的作用,曝光部朝鹼性顯影液的溶解性發生變化。<Photoacid generator (B)> The photosensitive resin composition of this invention contains a photoacid generator (B). The photoacid generator (B) is a compound that generates an acid by treatment including light irradiation. By the exposure treatment of the resin film formed from the photosensitive resin composition of the present invention, an acid is generated in the exposed part based on the photoacid generator (B), and by the action of the acid, the exposed part is directed toward the alkaline developer. Solubility changes.

本發明的感光性樹脂組成物可為正型或負型中的任一者。光酸產生劑(B)的種類可對應於正型或負型而適當選擇。 光酸產生劑(B)例如可列舉:具有醌二疊氮基的化合物(醌二疊氮化合物)等可於正型抗蝕劑中使用的光酸產生劑;鎓鹽化合物、含鹵素的化合物、碸化合物、磺酸化合物、磺醯亞胺化合物、重氮甲烷化合物等藉由光照射而產生強酸且可於負型抗蝕劑中使用的光酸產生劑。以下,亦將醌二疊氮化合物稱為「醌二疊氮化合物(B1)」,亦將除此以外的所述例示的光酸產生劑稱為「其他光酸產生劑(B2)」。The photosensitive resin composition of this invention may be either positive type or negative type. The type of the photoacid generator (B) can be appropriately selected according to the positive type or the negative type. Examples of the photoacid generator (B) include photoacid generators that can be used in positive resists such as compounds having a quinonediazide group (quinonediazide compound); onium salt compounds and halogen-containing compounds , sulfonic acid compounds, sulfonic acid compounds, sulfonimide compounds, diazomethane compounds, etc., are photoacid generators that generate strong acids by light irradiation and can be used in negative resists. Hereinafter, the quinonediazide compound is also referred to as "quinonediazide compound (B1)", and the photoacid generators exemplified above are also referred to as "other photoacid generators (B2)".

醌二疊氮化合物(B1)藉由包含光照射以及使用鹼性顯影液的顯影的處理產生羧酸。自含有醌二疊氮化合物(B1)的組成物所獲得的樹脂膜為相對於鹼性顯影液難溶的膜。因而,藉由使用醌二疊氮化合物(B1),可形成正型的圖案。The quinonediazide compound (B1) generates a carboxylic acid by a treatment including light irradiation and development with an alkaline developer. The resin film obtained from the composition containing a quinonediazide compound (B1) is a film which is hardly soluble with respect to an alkaline developer. Therefore, by using the quinonediazide compound (B1), a positive pattern can be formed.

其他酸產生劑(B2)為藉由光照射而產生強酸的化合物。自含有其他酸產生劑(B2)的組成物所獲得的樹脂膜藉由利用光照射所產生的所述酸作用於後述交聯劑(D)等來形成交聯結構。因而,藉由使用其他酸產生劑(B2),可形成負型的圖案。The other acid generator (B2) is a compound which generates a strong acid by light irradiation. The resin film obtained from the composition containing another acid generator (B2) forms a crosslinked structure by acting on the crosslinking agent (D) and the like described later by the acid generated by light irradiation. Therefore, by using another acid generator (B2), a negative pattern can be formed.

《醌二疊氮化合物(B1)》 醌二疊氮化合物(B1)例如可列舉萘醌二疊氮化合物,且為具有一個以上酚性羥基的化合物與1,2-萘醌二疊氮-4-磺酸或1,2-萘醌二疊氮-5-磺酸的酯化合物。作為具有一個以上酚性羥基的化合物的具體例,例如可列舉日本專利特開2014-186300號公報的段落[0065]~段落[0070]中記載的化合物,將該些記載於本說明書中。<<quinonediazide compound (B1)>> The quinonediazide compound (B1) includes, for example, a naphthoquinonediazide compound, and is a compound having one or more phenolic hydroxyl groups and 1,2-naphthoquinonediazide-4 -Ester compound of sulfonic acid or 1,2-naphthoquinonediazide-5-sulfonic acid. Specific examples of the compound having one or more phenolic hydroxyl groups include compounds described in paragraphs [0065] to [0070] of JP 2014-186300 A, which are described in the present specification.

作為醌二疊氮化合物(B1)的具體例,例如可列舉:選自4,4'-二羥基二苯基甲烷、4,4'-二羥基二苯醚、2,3,4-三羥基二苯甲酮、2,3,4,4'-四羥基二苯甲酮、2,3,4,2',4'-五羥基二苯甲酮、三(4-羥基二苯基)甲烷、三(4-羥基苯基)甲烷、1,1-雙(4-羥基苯基)-1-苯基乙烷、1,3-雙[1-(4-羥基苯基)-1-甲基乙基]苯、1,4-雙[1-(4-羥基苯基)-1-甲基乙基]苯、4,6-雙[1-(4-羥基苯基)-1-甲基乙基]-1,3-二羥基苯、及1,1-雙(4-羥基苯基)-1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基]乙烷中的化合物、與1,2-萘醌二疊氮-4-磺酸或1,2-萘醌二疊氮-5-磺酸的酯化合物。Specific examples of the quinonediazide compound (B1) include, for example, those selected from the group consisting of 4,4'-dihydroxydiphenylmethane, 4,4'-dihydroxydiphenyl ether, and 2,3,4-trihydroxyl Benzophenone, 2,3,4,4'-Tetrahydroxybenzophenone, 2,3,4,2',4'-Pentahydroxybenzophenone, Tris(4-hydroxydiphenyl)methane , Tris(4-hydroxyphenyl)methane, 1,1-bis(4-hydroxyphenyl)-1-phenylethane, 1,3-bis[1-(4-hydroxyphenyl)-1-methyl ethyl]benzene, 1,4-bis[1-(4-hydroxyphenyl)-1-methylethyl]benzene, 4,6-bis[1-(4-hydroxyphenyl)-1-methyl] ethyl]-1,3-dihydroxybenzene, and 1,1-bis(4-hydroxyphenyl)-1-[4-[1-(4-hydroxyphenyl)-1-methylethyl] A compound in phenyl]ethane, an ester compound with 1,2-naphthoquinonediazide-4-sulfonic acid or 1,2-naphthoquinonediazide-5-sulfonic acid.

醌二疊氮化合物(B1)可使用一種,或者可併用兩種以上來使用。 本發明的感光性樹脂組成物中,於使用醌二疊氮化合物(B1)作為光酸產生劑(B)的情況下,醌二疊氮化合物(B1)的含量相對於樹脂(A)100質量份通常為5質量份~50質量份,較佳為10質量份~40質量份,更佳為15質量份~35質量份。若醌二疊氮化合物(B1)的含量為所述下限值以上,則未曝光部的殘膜率提升,而容易獲得忠實於圖案遮罩的圖像。若醌二疊氮化合物(B1)的含量為所述上限值以下,則有容易獲得圖案形狀優異的樹脂膜、且亦可防止製膜時的起泡的傾向。The quinonediazide compound (B1) may be used alone or in combination of two or more. In the photosensitive resin composition of the present invention, when the quinonediazide compound (B1) is used as the photoacid generator (B), the content of the quinonediazide compound (B1) is based on 100 mass of the resin (A) The part is usually 5 parts by mass to 50 parts by mass, preferably 10 parts by mass to 40 parts by mass, and more preferably 15 parts by mass to 35 parts by mass. When the content of the quinonediazide compound (B1) is equal to or more than the above lower limit value, the residual film ratio of the unexposed portion increases, and it becomes easy to obtain an image faithful to the pattern mask. When the content of the quinonediazide compound (B1) is equal to or less than the above upper limit value, a resin film having an excellent pattern shape is easily obtained, and foaming during film formation tends to be prevented.

《其他酸產生劑(B2)》 其他酸產生劑(B2)例如為選自鎓鹽化合物、含鹵素的化合物、碸化合物、磺酸化合物、磺醯亞胺化合物及重氮甲烷化合物中的至少一種。作為該些化合物的具體例,例如可列舉日本專利特開2014-186300號公報的段落[0074]~段落[0079]中記載的化合物,將該些記載於本說明書中。<<Other Acid Generators (B2)>> The other acid generators (B2) are, for example, at least one selected from the group consisting of onium salt compounds, halogen-containing compounds, sulfur compounds, sulfonic acid compounds, sulfonimide compounds, and diazomethane compounds . Specific examples of these compounds include compounds described in paragraphs [0074] to [0079] of JP 2014-186300 A, which are described in the present specification.

本發明的感光性樹脂組成物中,於使用其他酸產生劑(B2)作為光酸產生劑(B)的情況下,酸產生劑(B2)的含量相對於樹脂(A)100質量份通常為0.1質量份~10質量份,較佳為0.3質量份~5質量份,更佳為0.5質量份~5質量份。若其他酸產生劑(B2)的含量為所述下限值以上,則曝光部的硬化變得充分,且容易提升耐熱性。若其他酸產生劑(B2)的含量為所述上限值以下,則容易獲得解析度高的圖案而不會使相對於曝光光的透明性降低。In the photosensitive resin composition of the present invention, when another acid generator (B2) is used as the photoacid generator (B), the content of the acid generator (B2) is usually 100 parts by mass of the resin (A). 0.1 to 10 parts by mass, preferably 0.3 to 5 parts by mass, more preferably 0.5 to 5 parts by mass. When content of another acid generator (B2) is more than the said lower limit, hardening of an exposure part becomes sufficient, and it becomes easy to improve heat resistance. When content of another acid generator (B2) is below the said upper limit, it becomes easy to obtain the pattern with high resolution, and transparency with respect to exposure light falls.

〈含馬來醯亞胺基的化合物(C)〉 本發明的感光性樹脂組成物含有含馬來醯亞胺基的化合物(C)。含馬來醯亞胺基的化合物(C)為具有一個以上、較佳為兩個以上的馬來醯亞胺基的化合物,馬來醯亞胺基數量的上限較佳為10,更佳為5。<Maleimide group-containing compound (C)> The photosensitive resin composition of the present invention contains a maleimide group-containing compound (C). The maleimide group-containing compound (C) is a compound having one or more, preferably two or more maleimide groups, and the upper limit of the number of maleimide groups is preferably 10, more preferably 5.

馬來醯亞胺基為於熱交聯時等直接作用於酚性羥基的基,例如認為進行以下反應。該反應中,羥基並非新生成者,另外,酚性羥基被消耗。The maleimide group is a group that acts directly on a phenolic hydroxyl group during thermal crosslinking or the like, and for example, it is considered that the following reaction proceeds. In this reaction, the hydroxyl group is not newly formed, and the phenolic hydroxyl group is consumed.

[化2]

Figure 02_image003
因而,藉由感光性樹脂組成物含有含馬來醯亞胺基的化合物(C),例如能夠以於後烘烤時消耗樹脂(A)的酚性羥基的形式形成交聯結構。此處,藉由硬化膜中的酚性羥基減少,即便不那麼提高交聯密度,亦能夠提升耐化學品性。[hua 2]
Figure 02_image003
Therefore, when the photosensitive resin composition contains the maleimide group-containing compound (C), a crosslinked structure can be formed, for example, in such a manner that the phenolic hydroxyl group of the resin (A) is consumed at the time of post-baking. Here, by reducing the phenolic hydroxyl group in the cured film, the chemical resistance can be improved even if the crosslinking density is not so increased.

含馬來醯亞胺基的化合物(C)較佳為具有兩個以上馬來醯亞胺基的化合物(C1)(以下,亦稱為「交聯性馬來醯亞胺化合物(C1)」),所述「交聯性馬來醯亞胺化合物(C1)例如可列舉由式(C1)表示的化合物。藉由使用交聯性馬來醯亞胺化合物(C1),由感光性樹脂組成物所形成的硬化膜可進一步發揮所述耐化學品性的提升效果。The maleimide group-containing compound (C) is preferably a compound (C1) having two or more maleimide groups (hereinafter, also referred to as "crosslinkable maleimide compound (C1)" ), the “cross-linkable maleimide compound (C1) includes, for example, a compound represented by formula (C1). By using the cross-linkable maleimide compound (C1), it is composed of a photosensitive resin. The cured film formed by the material can further exert the improvement effect of the chemical resistance.

[化3]

Figure 02_image005
式(C1)中,RC1 為有機基,有機基例如可列舉:烷烴二基、伸芳基等含芳香環的基、伸環烷基等含脂環的基、源於自不飽和脂肪酸所獲得的二聚酸的基。[hua 3]
Figure 02_image005
In the formula (C1), R C1 is an organic group, and the organic group includes, for example, an aromatic ring-containing group such as an alkanediyl group and an aryl-extended group, an alicyclic ring-containing group such as a cyclo-extended alkyl group, and a group derived from an unsaturated fatty acid. The base of the dimer acid obtained.

烷烴二基的碳數通常為1~20,較佳為2~10。 含芳香環的基及含脂環的基例如除碳數6~20的伸芳基及碳數3~20的伸環烷基以外,可列舉:由-A-X-A-表示的基、由-A-O-A-X-A-O-A-表示的基、由-RC2 -A-RC2 -表示的基。A為苯環或環己烷環,且亦可分別獨立地具有一個或兩個以上碳數1~10的烷基及碳數1~6的烷氧基等取代基。X為直接鍵、-O-、-SO2 -、碳數1~10的烷烴二基、或者碳數3~20的含脂環的基。RC2 為碳數1~10的烷烴二基。The number of carbon atoms in the alkanediyl group is usually 1-20, preferably 2-10. The aromatic ring-containing group and the alicyclic group-containing group include, for example, a group represented by -AXA-, a group represented by -AOAXAOA-, in addition to an aryl extended group having 6 to 20 carbon atoms and a cycloextended alkyl group having 3 to 20 carbon atoms. A base represented, a base represented by -R C2 -AR C2 -. A is a benzene ring or a cyclohexane ring, and may each independently have one or more substituents such as an alkyl group having 1 to 10 carbon atoms and an alkoxy group having 1 to 6 carbon atoms. X is a direct bond, -O-, -SO 2 -, an alkanediyl group having 1 to 10 carbon atoms, or an alicyclic group having 3 to 20 carbon atoms. R C2 is an alkanediyl group having 1 to 10 carbon atoms.

烷烴二基可列舉:亞甲基、乙烷二基、丙烷二基、己烷二基、辛烷二基、壬烷二基、癸烷二基等。伸芳基可列舉:伸苯基、甲基伸苯基、第三丁基伸苯基、伸萘基等。伸環烷基可列舉:環丁烷二基、環戊烷二基、環己烷二基等。烷基可列舉:甲基、乙基、丙基等。烷氧基可列舉:甲氧基、乙氧基等。脂環可列舉環己烷環、三環癸烷環等。The alkanediyl group includes a methylene group, an ethanediyl group, a propanediyl group, a hexanediyl group, an octanediyl group, a nonanediyl group, a decanediyl group, and the like. As an arylidene group, a phenylene group, a methylphenylene group, a tert-butylphenylene group, a naphthylene group, etc. are mentioned. As a cycloextended alkyl group, a cyclobutanediyl group, a cyclopentanediyl group, a cyclohexanediyl group, etc. are mentioned. As an alkyl group, a methyl group, an ethyl group, a propyl group, etc. are mentioned. As an alkoxy group, a methoxy group, an ethoxy group, etc. are mentioned. As an alicyclic ring, a cyclohexane ring, a tricyclodecane ring, etc. are mentioned.

作為交聯性馬來醯亞胺化合物(C1)的具體例,例如可列舉: N,N'-伸乙基雙馬來醯亞胺、 N,N'-六亞甲基雙馬來醯亞胺、 N,N'-(2,2,4-三甲基己烷)雙馬來醯亞胺、 N,N'-對伸苯基雙馬來醯亞胺、 N,N'-間伸苯基雙馬來醯亞胺、 N,N'-2,4-甲伸苯基雙馬來醯亞胺、 N,N'-2,6-甲伸苯基雙馬來醯亞胺、 N,N'-對伸二甲苯基雙馬來醯亞胺、 N,N'-間伸二甲苯基雙馬來醯亞胺、 N,N'-(1,3-二亞甲基環己烷)雙馬來醯亞胺、 N,N'-(1,4-二亞甲基環己烷)雙馬來醯亞胺、 N,N'-(4,4'-伸聯苯)雙馬來醯亞胺、 N,N'-(4,4'-二苯基甲烷)雙馬來醯亞胺、 N,N'-(4,4'-二環己基甲烷)雙馬來醯亞胺、 N,N'-(4,4'-二苯基氧基)雙馬來醯亞胺、 N,N'-(4,4'-二苯基碸)雙馬來醯亞胺。Specific examples of the crosslinkable maleimide compound (C1) include N,N'-ethylidenebismaleimide, N,N'-hexamethylenebismaleimide, for example. Amine, N,N'-(2,2,4-trimethylhexane)bismaleimide, N,N'-p-phenylene bismaleimide, N,N'-dimaleimide Phenylbismaleimide, N,N'-2,4-methylenebismaleimide, N,N'-2,6-methylenebismaleimide, N ,N'-p-xylylenebismaleimide, N,N'-m-xylylenebismaleimide, N,N'-(1,3-dimethylenecyclohexane)bis Maleimide, N,N'-(1,4-dimethylenecyclohexane)bismaleimide, N,N'-(4,4'-biphenylene)bismaleimide Imine, N,N'-(4,4'-diphenylmethane)bismaleimide, N,N'-(4,4'-dicyclohexylmethane)bismaleimide, N , N'-(4,4'-diphenyloxy) bismaleimide, N,N'-(4,4'-diphenyloxy) bismaleimide.

作為交聯性馬來醯亞胺化合物(C1)的其他具體例,例如可列舉:雙[4-(4-馬來醯亞胺苯氧基)苯基]甲烷、2,2-雙[4-(4-馬來醯亞胺苯氧基)苯基]丙烷、雙[4-(4-馬來醯亞胺苯氧基)苯基]辛烷、雙[4-(4-馬來醯亞胺苯氧基)苯基]癸烷、雙[4-(4-馬來醯亞胺苯氧基)苯基]環己烷、雙[4-(4-馬來醯亞胺苯氧基)苯基]-三環-[5.2.1.O2.6 ]癸烷。As other specific examples of the crosslinkable maleimide compound (C1), for example, bis[4-(4-maleimidephenoxy)phenyl]methane, 2,2-bis[4 -(4-Maleimidophenoxy)phenyl]propane, bis[4-(4-maleimidophenoxy)phenyl]octane, bis[4-(4-maleimide) iminophenoxy)phenyl]decane, bis[4-(4-maleimidophenoxy)phenyl]cyclohexane, bis[4-(4-maleimidophenoxy) )phenyl]-tricyclo-[ 5.2.1.O2.6 ]decane.

所述例示化合物中的苯環及環己烷環中的至少一個氫原子亦可分別獨立地經C1-10 烷基取代。烷基例如可列舉:甲基、乙基、丙基。At least one hydrogen atom in the benzene ring and the cyclohexane ring in the exemplified compounds may also be independently substituted with a C 1-10 alkyl group, respectively. Examples of the alkyl group include a methyl group, an ethyl group, and a propyl group.

此外,亦可使用聚氧伸烷基二胺的兩末端經馬來酸酐密封的雙馬來醯亞胺化合物。例如,可列舉:聚氧乙烯二胺的兩末端經馬來酸酐密封的雙馬來醯亞胺化合物、聚氧丙烯二胺的兩末端經馬來酸酐密封的雙馬來醯亞胺化合物、聚氧丁烯二胺的兩末端經馬來酸酐密封的雙馬來醯亞胺化合物。In addition, a bismaleimide compound in which both ends of the polyoxyalkylene diamine are sealed with maleic anhydride can also be used. For example, the bismaleimide compound in which both ends of polyoxyethylene diamine are sealed with maleic anhydride, the bismaleimide compound in which both ends of polyoxypropylene diamine are sealed with maleic anhydride, the A bismaleimide compound in which both ends of oxybutenediamine are sealed with maleic anhydride.

另外,含馬來醯亞胺基的化合物(C)亦可使用具有一個馬來醯亞胺基的化合物(C2)(以下,亦稱為「非交聯性馬來醯亞胺化合物(C2)」)。於使用非交聯性馬來醯亞胺化合物(C2)的情況下,例如亦可於後烘烤時消耗樹脂(A)的酚性羥基,因而可提升所獲得的膜的耐化學品性。另外,於使用非交聯性馬來醯亞胺化合物(C2)的情況下,就硬化性的觀點而言,較佳為使用交聯劑(D)。In addition, as the maleimide group-containing compound (C), a compound (C2) having one maleimide group (hereinafter, also referred to as "non-crosslinkable maleimide compound (C2)" may be used. '). In the case of using the non-crosslinkable maleimide compound (C2), for example, the phenolic hydroxyl group of the resin (A) can also be consumed during post-baking, so that the chemical resistance of the obtained film can be improved. Moreover, when using a non-crosslinkable maleimide compound (C2), it is preferable to use a crosslinking agent (D) from a sclerosing viewpoint.

非交聯性馬來醯亞胺化合物(C2)例如可列舉:N-苯基馬來醯亞胺、N-鄰甲基苯基馬來醯亞胺等N-C6-20 芳基馬來醯亞胺;N-甲基馬來醯亞胺、N-丙基馬來醯亞胺、N-丁基馬來醯亞胺、N-癸基馬來醯亞胺等N-C1-20 烷基馬來醯亞胺;N-環己基馬來醯亞胺等N-C3-20 環烷基馬來醯亞胺。Examples of the non-crosslinkable maleimide compound (C2) include NC 6-20 arylmaleimide such as N-phenylmaleimide and N-o-methylphenylmaleimide. Amines; N-methylmaleimide, N-propylmaleimide, N-butylmaleimide, N-decylmaleimide, etc. NC 1-20 alkyl maleimide Imide; N-cyclohexylmaleimide and other NC 3-20 cycloalkylmaleimide.

含馬來醯亞胺基的化合物(C)可使用一種,或者可併用兩種以上來使用。 本發明的感光性樹脂組成物中,含馬來醯亞胺基的化合物(C)的含量相對於樹脂(A)100質量份通常為0.1質量份~200質量份,較佳為1質量份~100質量份,更佳為5質量份~50質量份。含馬來醯亞胺基的化合物(C)的含量若處於所述範圍,則自感光性樹脂組成物所獲得的硬化膜的耐化學品性與耐龜裂性的兼顧優異。The maleimide group-containing compound (C) may be used alone or in combination of two or more. In the photosensitive resin composition of the present invention, the content of the maleimide group-containing compound (C) is usually 0.1 parts by mass to 200 parts by mass, preferably 1 part by mass to 100 parts by mass of the resin (A). 100 parts by mass, more preferably 5 parts by mass to 50 parts by mass. When content of the maleimide group-containing compound (C) is within the above range, the cured film obtained from the photosensitive resin composition is excellent in both chemical resistance and crack resistance.

〈交聯劑(D)〉 為了提升樹脂膜的硬化性,另外為了兼顧硬化膜的耐化學品性與耐龜裂性,本發明的感光性樹脂組成物可含有交聯劑(D)作為任意成分。其中,自交聯劑(D)中將所述含馬來醯亞胺基的化合物(C)除外。交聯劑(D)作為樹脂(A)、或者以交聯劑彼此進行反應的交聯成分(硬化成分)起作用。<Crosslinking agent (D)> The photosensitive resin composition of the present invention may contain a crosslinking agent (D) as an optional Element. However, the maleimide group-containing compound (C) is excluded from the self-crosslinking agent (D). The crosslinking agent (D) functions as a resin (A) or a crosslinking component (hardening component) in which the crosslinking agents react with each other.

交聯劑(D)較佳為包含選自環氧系交聯劑(D1)、及具有至少兩個由-CH2 OR表示的基(所述式中,R為氫原子、碳數1~10的烷基或碳數2~10的醯基)的交聯劑(D2)中的至少一種交聯劑。The crosslinking agent (D) preferably contains an epoxy-based crosslinking agent (D1) and has at least two groups represented by -CH 2 OR (in the formula, R is a hydrogen atom and has 1 to 1 carbon atoms) At least one cross-linking agent in the cross-linking agent (D2) of an alkyl group of 10 or an acyl group of 2 to 10 carbon atoms).

環氧系交聯劑(D1)例如可列舉:苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、萘酚酚醛清漆型環氧樹脂、萘酚-苯酚共縮合酚醛清漆型環氧樹脂、萘酚-甲酚共縮合酚醛清漆型環氧樹脂、雙酚型環氧樹脂、聯苯型環氧樹脂、三酚型環氧樹脂、四酚型環氧樹脂、苯酚-伸二甲苯基型環氧樹脂、萘酚-伸二甲苯基型環氧樹脂、苯酚-二環戊二烯型環氧樹脂、苯酚芳烷基型環氧樹脂、萘酚芳烷基型環氧樹脂、聯苯芳烷基型環氧樹脂、間苯二酚(resorcin)型環氧樹脂、對苯二酚型環氧樹脂、鄰苯二酚型環氧樹脂、二羥基萘型環氧樹脂、脂環式環氧樹脂、脂肪族環氧樹脂。Examples of the epoxy-based crosslinking agent (D1) include: phenol novolak epoxy resin, cresol novolak epoxy resin, naphthol novolak epoxy resin, and naphthol-phenol co-condensation novolak epoxy resin Resin, naphthol-cresol co-condensation novolac type epoxy resin, bisphenol type epoxy resin, biphenyl type epoxy resin, trisphenol type epoxy resin, tetraphenol type epoxy resin, phenol-xylylene type Epoxy resin, naphthol-xylylene type epoxy resin, phenol-dicyclopentadiene type epoxy resin, phenol aralkyl type epoxy resin, naphthol aralkyl type epoxy resin, biphenylaralkyl Base type epoxy resin, resorcin type epoxy resin, hydroquinone type epoxy resin, catechol type epoxy resin, dihydroxynaphthalene type epoxy resin, alicyclic epoxy resin , Aliphatic epoxy resin.

交聯劑(D2)具有至少兩個由-CH2 OR表示的基。所述式中,R為氫原子、碳數1~10的烷基或碳數2~10的醯基,較佳為氫原子或碳數1~6的烷基。所述烷基可列舉:甲基、乙基、丙基、丁基等。所述醯基可列舉乙醯基等。此處,關於由-CH2 OR表示的基,認為藉由熱或酸而亞甲基與樹脂(A)的芳香環發生反應,且進行交聯反應。The crosslinking agent (D2) has at least two groups represented by -CH2OR . In the formula, R is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an amide group having 2 to 10 carbon atoms, preferably a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, and the like. Examples of the acyl group include an acetyl group and the like. Here, regarding the group represented by -CH 2 OR, it is considered that the methylene group reacts with the aromatic ring of the resin (A) by heat or acid, and the crosslinking reaction proceeds.

交聯劑(D2)例如可列舉:具有兩個以上由式(d2-1)表示的基的化合物、具有兩個以上由式(d2-2)表示的基的化合物、含羥甲基的酚化合物、含烷基羥甲基的酚化合物、含醯氧基甲基的酚化合物。The crosslinking agent (D2) includes, for example, a compound having two or more groups represented by formula (d2-1), a compound having two or more groups represented by formula (d2-2), and a methylol-containing phenol. Compounds, alkylmethylol-containing phenolic compounds, acyloxymethyl-containing phenolic compounds.

[化4]

Figure 02_image007
式(d2-1)及式(d2-2)中,m為1或2,n為0或1,m+n為2,R為氫原子、碳數1~10的烷基或碳數2~10的醯基,較佳為氫原子或碳數1~6的烷基,*為結合鍵。[hua 4]
Figure 02_image007
In formula (d2-1) and formula (d2-2), m is 1 or 2, n is 0 or 1, m+n is 2, R is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a carbon number 2 The acyl group of ~10 is preferably a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and * is a bond.

交聯劑(D2)例如可列舉:聚羥甲基化三聚氰胺、聚羥甲基化甘脲、聚羥甲基化胍胺、聚羥甲基化脲等氮化合物;所述氮化合物中的活性羥甲基(鍵結於N原子的CH2 OH基)的全部或一部分經烷基醚化或醯氧基化的化合物。此處,構成烷基醚的烷基例如可列舉甲基、乙基、丙基、丁基,該些彼此可相同,亦可不同。另外,未經烷基醚化或醯氧基化的活性羥甲基可於一分子內自縮合,或者,於二分子之間縮合,其結果,可形成寡聚物成分。Examples of the crosslinking agent (D2) include nitrogen compounds such as polymethylolated melamine, polymethylolated glycoluril, polymethylolated guanamine, and polymethylolated urea; the activity of the nitrogen compounds A compound in which all or a part of the methylol group (CH 2 OH group bonded to the N atom) is alkyl-etherified or oxy-alkylated. Here, examples of the alkyl group constituting the alkyl ether include a methyl group, an ethyl group, a propyl group, and a butyl group, and these may be the same or different from each other. In addition, the active methylol group which has not been alkyl-etherified or oxyalkylated can be self-condensed in one molecule or condensed between two molecules, and as a result, an oligomer component can be formed.

交聯劑(D2)例如可列舉:日本專利特開平6-180501號公報、日本專利特開2006-178059號公報、以及日本專利特開2012-226297號公報中記載的交聯劑。具體而言,可列舉:聚羥甲基化三聚氰胺、六甲氧基甲基三聚氰胺、六乙氧基甲基三聚氰胺、六丙氧基甲基三聚氰胺、六丁氧基甲基三聚氰胺等三聚氰胺系交聯劑;聚羥甲基化甘脲、四甲氧基甲基甘脲、四丁氧基甲基甘脲等甘脲系交聯劑;3,9-雙[2-(3,5-二胺基-2,4,6-三氮雜苯基)乙基]2,4,8,10-四氧代螺[5.5]十一烷、3,9-雙[2-(3,5-二胺基-2,4,6-三氮雜苯基)丙基]2,4,8,10-四氧代螺[5.5]十一烷等胍胺經羥甲基化的化合物、以及該化合物中的活性羥甲基的全部或一部分經烷基醚化或醯氧基化的化合物等胍胺系交聯劑。該些之中,較佳為三聚氰胺系交聯劑及胍胺系交聯劑。As a crosslinking agent (D2), the crosslinking agent described in Unexamined-Japanese-Patent No. 6-180501, Unexamined-Japanese-Patent No. 2006-178059, and Unexamined-Japanese-Patent No. 2012-226297 is mentioned, for example. Specifically, melamine-based crosslinking agents such as polymethylolated melamine, hexamethoxymethyl melamine, hexaethoxymethyl melamine, hexapropoxymethyl melamine, and hexabutoxymethyl melamine may be mentioned. ; Glycoluril based cross-linking agents such as polymethylolated glycoluril, tetramethoxymethyl glycoluril, tetrabutoxymethyl glycoluril; 3,9-bis[2-(3,5-diamino) -2,4,6-Triazaphenyl)ethyl]2,4,8,10-tetraoxospiro[5.5]undecane, 3,9-bis[2-(3,5-diamine hydroxymethylated guanamines such as guanamines such as yl-2,4,6-triazaphenyl)propyl]2,4,8,10-tetraoxospiro[5.5]undecane, and compounds in the compounds A guanamine-based crosslinking agent such as a compound in which all or a part of the active methylol group is alkyl-etherified or oxo-oxylated. Among these, a melamine-based crosslinking agent and a guanamine-based crosslinking agent are preferred.

作為含羥甲基的酚化合物、含烷基羥甲基的酚化合物及含醯氧基甲基的酚化合物,例如可列舉:由下述式表示的化合物、2,6-二甲氧基甲基-4-第三丁基苯酚、2,6-二甲氧基甲基-對甲酚、2,6-二乙醯氧基甲基-對甲酚。Examples of the methylol group-containing phenol compound, the alkylmethylol group-containing phenol compound, and the acyloxymethyl group-containing phenol compound include compounds represented by the following formulas, 2,6-dimethoxymethyl yl-4-tert-butylphenol, 2,6-dimethoxymethyl-p-cresol, 2,6-diethyloxymethyl-p-cresol.

[化5]

Figure 02_image009
交聯劑(D2)可使用一種,或者可併用兩種以上來使用。[hua 5]
Figure 02_image009
One type of crosslinking agent (D2) may be used, or two or more types may be used in combination.

交聯劑(D)亦可使用除環氧系交聯劑(D1)及所述交聯劑(D2)以外的其他交聯劑(D3)。其他交聯劑(D3)例如可列舉:含氧雜環丁烷的化合物、含噁唑啉環的化合物、含異氰酸酯基的化合物(包含經封端化而成者)、含醛基的酚化合物。As the crosslinking agent (D), other crosslinking agents (D3) other than the epoxy-based crosslinking agent (D1) and the crosslinking agent (D2) may be used. Examples of other crosslinking agents (D3) include oxetane-containing compounds, oxazoline ring-containing compounds, isocyanate group-containing compounds (including those obtained by blocking), and aldehyde group-containing phenolic compounds .

本發明的感光性樹脂組成物中,交聯劑(D)的含量相對於樹脂(A)100質量份,通常為1質量份~60質量份,較佳為3質量份~50質量份、更佳為5質量份~40質量份。若交聯劑(D)的含量處於所述範圍,則可形成耐化學品性與耐龜裂性的兼顧優異的硬化膜。另外,組成物的硬化性優異。In the photosensitive resin composition of the present invention, the content of the crosslinking agent (D) is usually 1 to 60 parts by mass, preferably 3 to 50 parts by mass, preferably 3 to 50 parts by mass, relative to 100 parts by mass of the resin (A). Preferably it is 5 mass parts - 40 mass parts. When content of a crosslinking agent (D) exists in the said range, the cured film excellent in both chemical resistance and crack resistance can be formed. In addition, the composition has excellent curability.

〈溶劑〉 本發明的感光性樹脂組成物可含有溶劑。藉由使用溶劑,可提升本發明的感光性樹脂組成物的操作性,或者調節黏度或保存穩定性。<Solvent> The photosensitive resin composition of this invention may contain a solvent. By using a solvent, the handleability of the photosensitive resin composition of the present invention can be improved, or the viscosity or storage stability can be adjusted.

溶劑例如可列舉: 乙二醇單甲醚乙酸酯、乙二醇單乙醚乙酸酯等乙二醇單烷基醚乙酸酯類;丙二醇單甲醚、丙二醇單乙醚、丙二醇單丙醚、丙二醇單丁醚等丙二醇單烷基醚類;丙二醇二甲醚、丙二醇二乙醚、丙二醇二丙醚、丙二醇二丁醚等丙二醇二烷基醚類;丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯、丙二醇單丁醚乙酸酯等丙二醇單烷基醚乙酸酯類; 乙基溶纖劑、丁基溶纖劑等溶纖劑類;丁基卡必醇等卡必醇類;乳酸甲酯、乳酸乙酯、乳酸正丙酯、乳酸異丙酯等乳酸酯類;乙酸乙酯、乙酸正丙酯、乙酸異丙酯、乙酸正丁酯、乙酸異丁酯、乙酸正戊酯、乙酸異戊酯、丙酸異丙酯、丙酸正丁酯、丙酸異丁酯等脂肪族羧酸酯類;3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、丙酮酸甲酯、丙酮酸乙酯等其他酯類; 2-庚酮、3-庚酮、4-庚酮、環己酮等酮類;N-二甲基甲醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、N-甲基吡咯啶酮等醯胺類; γ-丁內酯等內酯類; 甲苯、二甲苯等芳香族烴類。Examples of the solvent include: ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol propylene glycol monoalkyl ethers such as monobutyl ether; propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dipropyl ether, propylene glycol dibutyl ether and other propylene glycol dialkyl ethers; propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate Esters, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate and other propylene glycol monoalkyl ether acetates; ethyl cellosolve, butyl cellosolve and other cellosolves; butyl carbitol and other carbitol Alcohols; lactate esters such as methyl lactate, ethyl lactate, n-propyl lactate, isopropyl lactate; ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, acetic acid Aliphatic carboxylic acid esters such as n-amyl, isoamyl acetate, isopropyl propionate, n-butyl propionate, isobutyl propionate; methyl 3-methoxypropionate, 3-methoxypropionate Acid ethyl ester, methyl 3-ethoxy propionate, ethyl 3-ethoxy propionate, methyl pyruvate, ethyl pyruvate and other esters; 2-heptanone, 3-heptanone, 4-heptanone Ketones such as heptanone and cyclohexanone; N-dimethylformamide, N-methylacetamide, N,N-dimethylacetamide, N-methylpyrrolidone and other amides; Lactones such as γ-butyrolactone; Aromatic hydrocarbons such as toluene and xylene.

該些之中,較佳為內酯類、乳酸酯類、丙二醇單烷基醚乙酸酯類、丙二醇單烷基醚類;更佳為γ-丁內酯、乳酸乙酯、丙二醇單甲醚乙酸酯、丙二醇單甲醚。Among these, lactones, lactate esters, propylene glycol monoalkyl ether acetates, propylene glycol monoalkyl ethers are preferred; γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether ethyl are more preferred acid ester, propylene glycol monomethyl ether.

溶劑可使用一種,或者可併用兩種以上來使用。 於使用溶劑的情況下,本發明的感光性樹脂組成物中的溶劑的含有比例通常為10質量%~95質量%,較佳為30質量%~90質量%。One type of solvent may be used, or two or more types may be used in combination. When using a solvent, the content rate of the solvent in the photosensitive resin composition of this invention is 10 mass % - 95 mass % normally, Preferably it is 30 mass % - 90 mass %.

〈其他添加劑〉 本發明的感光性樹脂組成物除此以外,亦可於不損及本發明的目的及特性的範圍內含有密接助劑、交聯微粒子、調平劑、界面活性劑、增感劑、無機填料、淬滅劑、以及鹼溶解性促進劑等各種添加劑。<Other Additives> The photosensitive resin composition of the present invention may contain, in addition to the above, an adhesion adjuvant, a cross-linked fine particle, a leveling agent, a surfactant, a sensitizer, within a range that does not impair the purpose and properties of the present invention. additives, inorganic fillers, quenchers, and alkali solubility enhancers.

〈感光性樹脂組成物的製備方法〉 本發明的感光性樹脂組成物可藉由將各成分均勻混合而製備。另外,為了去除異物,亦可將各成分均勻混合之後,藉由過濾器等對所獲得的混合物進行過濾。<Preparation method of photosensitive resin composition> The photosensitive resin composition of this invention can be prepared by uniformly mixing each component. Moreover, in order to remove a foreign material, after mixing each component uniformly, you may filter the obtained mixture with a filter etc..

〔硬化膜及其製造方法〕 本發明的硬化膜是由所述感光性樹脂組成物所形成。藉由使用所述感光性樹脂組成物,可製造耐化學品性及耐龜裂性高、且解析度高的圖案化硬化膜。THE CURRED FILM AND THE MANUFACTURING METHOD THEREOF The cured film of this invention is formed from the said photosensitive resin composition. By using the photosensitive resin composition, a patterned cured film having high chemical resistance and crack resistance and high resolution can be produced.

因而,本發明的感光性樹脂組成物可較佳地用於硬化膜及絕緣膜的形成,例如可較佳地用作電路基板(半導體元件)、半導體封裝或顯示元件等電子零件所具有的表面保護膜、層間絕緣膜及平坦化膜等的形成材料、或者高密度安裝基板用絕緣膜材料。Therefore, the photosensitive resin composition of the present invention can be preferably used for the formation of cured films and insulating films, and can be preferably used, for example, as a surface of electronic parts such as circuit boards (semiconductor elements), semiconductor packages, and display elements. Forming materials for protective films, interlayer insulating films, planarizing films, etc., or insulating film materials for high-density mounting substrates.

以下示出本發明的硬化膜的製造例。該製造例包括:於支撐體上形成本發明的感光性樹脂組成物的樹脂膜的步驟(膜形成步驟);介隔所需的圖案遮罩對所述樹脂膜進行曝光的步驟(曝光步驟);藉由鹼性顯影液對所述樹脂膜進行顯影,並於正型的情況下將曝光部溶解·去除,於負型的情況下將非曝光部溶解·去除,藉此於支撐體上形成所需的圖案化樹脂膜的步驟(顯影步驟);以及對所述圖案化樹脂膜進行加熱的步驟(加熱步驟)。The manufacture example of the cured film of this invention is shown below. This production example includes: a step of forming a resin film of the photosensitive resin composition of the present invention on a support (film forming step); and a step of exposing the resin film through a desired pattern mask (exposure step) ; The resin film is developed by an alkaline developer, and in the case of a positive type, the exposed part is dissolved and removed, and in the case of a negative type, the non-exposed part is dissolved and removed, thereby forming on the support. A desired step of patterning the resin film (developing step); and a step of heating the patterned resin film (heating step).

[1] 膜形成步驟 於膜形成步驟中,將所述感光性樹脂組成物以最終獲得的硬化膜的膜厚成為例如0.1 μm~100 μm的方式塗佈於支撐體上。使用烘箱或加熱板對其例如於50℃~140℃下加熱10秒鐘~360秒鐘(預烘烤)。如此般將樹脂膜形成於支撐體上。[1] Film forming step In the film forming step, the photosensitive resin composition is applied on a support so that the film thickness of the finally obtained cured film may be, for example, 0.1 μm to 100 μm. This is heated at, for example, 50° C. to 140° C. for 10 seconds to 360 seconds using an oven or a hot plate (pre-baking). In this way, the resin film is formed on the support.

支撐體例如可列舉:矽晶圓、化合物半導體晶圓、附帶金屬薄膜的晶圓、玻璃基板、石英基板、陶瓷基板、鋁基板、以及於該些支撐體的表面具有半導體晶片的基板。塗佈方法例如可列舉:浸漬法、噴霧法、棒塗法、輥塗法、旋塗法、簾式塗佈法、凹版印刷法、絲網印製法、噴墨法。Examples of the support include silicon wafers, compound semiconductor wafers, wafers with metal thin films, glass substrates, quartz substrates, ceramic substrates, aluminum substrates, and substrates having semiconductor wafers on the surfaces of these supports. The coating method includes, for example, a dipping method, a spray method, a bar coating method, a roll coating method, a spin coating method, a curtain coating method, a gravure printing method, a screen printing method, and an inkjet method.

[2] 曝光步驟 於曝光步驟中,介隔所需的圖案遮罩,並使用例如接觸式對準機(contact aligner)、步進機或掃描儀對所述樹脂膜進行曝光。曝光光可列舉紫外線、可見光線等,例如使用波長200 nm~500 nm的光(例如:i射線(365 nm))。光化射線的照射量因所述感光性樹脂組成物中的各成分的種類、調配比例、所述樹脂膜的厚度等而不同,但曝光量通常為100 mJ/cm2 ~5,000 mJ/cm2[2] Exposure Step In the exposure step, a desired pattern mask is interposed, and the resin film is exposed using, for example, a contact aligner, a stepper, or a scanner. The exposure light includes ultraviolet rays, visible rays, and the like, and for example, light having a wavelength of 200 nm to 500 nm (eg, i-ray (365 nm)) is used. The exposure dose of actinic rays varies depending on the type of each component in the photosensitive resin composition, the mixing ratio, the thickness of the resin film, etc., but the exposure dose is usually 100 mJ/cm 2 to 5,000 mJ/cm 2 .

另外,於負型的情況下,亦可於曝光後進行樹脂膜的加熱處理。加熱處理的條件因所述感光性樹脂組成物的各成分的含量及膜厚等而不同,但通常為於70℃~150℃、較佳為80℃~120℃下進行1分鐘~60分鐘左右。Moreover, in the case of a negative type, you may perform heat processing of a resin film after exposure. The conditions of the heat treatment vary depending on the content and film thickness of each component of the photosensitive resin composition, but are usually performed at 70°C to 150°C, preferably 80°C to 120°C for about 1 minute to 60 minutes. .

[3] 顯影步驟 於顯影步驟中,藉由鹼性顯影液對所述樹脂膜進行顯影,於正型的情況下將曝光部溶解·去除,於負型的情況下將非曝光部溶解·去除,藉此於支撐體上形成所需的圖案。顯影方法可列舉覆液顯影法等。顯影條件例如為於5℃~40℃下進行1分鐘~10分鐘左右。[3] Development step In the development step, the resin film is developed with an alkaline developer, and in the case of a positive type, the exposed part is dissolved and removed, and in the case of a negative type, the non-exposed part is dissolved and removed , thereby forming the desired pattern on the support. As a development method, a liquid-overlap development method etc. are mentioned. The development conditions are, for example, about 1 minute to 10 minutes at 5°C to 40°C.

鹼性顯影液例如可列舉:使氫氧化鈉、氫氧化鉀、氨水、四甲基氫氧化銨、膽鹼等鹼性化合物以成為1質量%~10質量%濃度的方式溶解於水中而成的鹼性水溶液。所述鹼性水溶液中例如可適量添加甲醇、乙醇等水溶性的有機溶劑及界面活性劑等。再者,藉由鹼性顯影液對樹脂膜進行顯影之後,可藉由水進行清洗並加以乾燥。Examples of the alkaline developer include those obtained by dissolving basic compounds such as sodium hydroxide, potassium hydroxide, ammonia water, tetramethylammonium hydroxide, and choline in water so as to have a concentration of 1% by mass to 10% by mass. Alkaline aqueous solution. For example, an appropriate amount of water-soluble organic solvents such as methanol and ethanol, surfactants and the like can be added to the alkaline aqueous solution. In addition, after developing a resin film with an alkaline developing solution, it can wash|clean with water, and can be dried.

[4] 加熱步驟 加熱步驟例如是為了充分體現出作為絕緣膜的特性而進行的步驟,藉由加熱使圖案硬化(後烘烤)。硬化條件並無特別限定,但對應於硬化膜的用途,例如於100℃~350℃的溫度下加熱30分鐘~10小時左右。為了使硬化充分地進行、或者防止圖案形狀的變形,可以多階段來進行加熱。 如以上般,可獲得硬化膜。[4] Heating step The heating step is, for example, a step performed in order to fully express the properties as an insulating film, and the pattern is cured by heating (post-baking). The curing conditions are not particularly limited, but according to the application of the cured film, for example, it is heated at a temperature of 100° C. to 350° C. for about 30 minutes to 10 hours. In order to sufficiently advance hardening or prevent deformation of the pattern shape, heating may be performed in multiple stages. As described above, a cured film can be obtained.

〔電子零件〕 若使用本發明的感光性樹脂組成物,則可製造具有所述硬化膜的電子零件,例如具有選自表面保護膜、層間絕緣膜及平坦化膜中的一種以上硬化膜的、電路基板(半導體元件)、半導體封裝或者顯示元件等電子零件。 [實施例][ELECTRONIC COMPONENTS] When the photosensitive resin composition of the present invention is used, an electronic component having the cured film, for example, one having one or more cured films selected from the group consisting of a surface protective film, an interlayer insulating film, and a planarizing film can be produced. Electronic components such as circuit boards (semiconductor elements), semiconductor packages, or display elements. [Example]

以下,基於實施例來進一步具體地說明本發明,但本發明不限定於該些實施例。於以下實施例等的記載中,只要未特別提及,則「份」是以「質量份」的含義使用。Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples. In the description of the following examples and the like, unless otherwise specified, "parts" are used in the meaning of "parts by mass".

1. 物性的測定方法 樹脂(A)的重量平均分子量(Mw)的測定方法 於下述條件下藉由凝膠滲透層析法測定Mw。 ·管柱:將東曹公司製造的管柱TSK-M及TSK2500串聯連接 ·溶媒:四氫呋喃 ·溫度:40℃ ·檢測方法:折射率法 ·標準物質:聚苯乙烯 ·GPC裝置:東曹製造的裝置名「HLC-8220-GPC」 樹脂(A)的結構單元的含量的測定方法 結構單元的含量藉由13 C-NMR測定。1. Measurement method of physical properties Measurement method of weight average molecular weight (Mw) of resin (A) Mw was measured by gel permeation chromatography under the following conditions.・Column: TSK-M and TSK2500 manufactured by Tosoh Corporation were connected in series ・Solvent: Tetrahydrofuran ・Temperature: 40°C ・Detection method: Refractive index method ・Standard material: Polystyrene ・GPC apparatus: manufactured by Tosoh Corporation Apparatus name "HLC-8220-GPC" Method for measuring the content of the structural unit of the resin (A) The content of the structural unit was measured by 13 C-NMR.

2. 樹脂(A)的合成 [合成例1] 共聚物(a-1)的合成 使對第三丁氧基苯乙烯70份與苯乙烯10份溶解於丙二醇單甲醚150份中,於氮氣環境下,將反應溫度保持為70℃,使用偶氮雙異丁腈4份進行10小時聚合。然後,向反應溶液中加入硫酸,將反應溫度保持為90℃並進行10小時反應,將對第三丁氧基苯乙烯單元脫保護並轉換為對羥基苯乙烯單元。向所獲得的共聚物中添加乙酸乙酯,反覆進行5次水洗,對乙酸乙酯層進行分選,並去除溶劑,從而獲得對羥基苯乙烯/苯乙烯共聚物(a-1)。2. Synthesis of Resin (A) [Synthesis Example 1] Synthesis of Copolymer (a-1) 70 parts of p-tertiary butoxystyrene and 10 parts of styrene were dissolved in 150 parts of propylene glycol monomethyl ether, and the mixture was heated under nitrogen. The reaction temperature was kept at 70° C. under ambient conditions, and polymerization was performed for 10 hours using 4 parts of azobisisobutyronitrile. Then, sulfuric acid was added to the reaction solution, the reaction temperature was kept at 90° C. and the reaction was carried out for 10 hours to deprotect the tertiary butoxystyrene unit and convert it into a p-hydroxystyrene unit. Ethyl acetate was added to the obtained copolymer, the water washing was repeated five times, the ethyl acetate layer was sorted, and the solvent was removed to obtain a p-hydroxystyrene/styrene copolymer (a-1).

共聚物(a-1)的重量平均分子量(Mw)為10,000。另外,共聚物(a-1)為具有80莫耳%的對羥基苯乙烯單元、20莫耳%的苯乙烯單元的共聚物。The weight average molecular weight (Mw) of the copolymer (a-1) was 10,000. In addition, the copolymer (a-1) is a copolymer having 80 mol % of p-hydroxystyrene units and 20 mol % of styrene units.

3. 感光性樹脂組成物的製造 [實施例1] 將作為樹脂(A)的合成例1的共聚物(a-1)95份、作為光酸產生劑(B)的1,1-雙(4-羥基苯基)-1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基]乙烷與1,2-萘醌二疊氮-5-磺酸的縮合物(莫耳比=1:2)(b-1)27.5份、作為含馬來醯亞胺基的化合物(C)的4,4'-聯苯甲烷雙馬來醯亞胺(c-1)30份、以及作為交聯劑(D)的二環戊二烯·苯酚聚合物的聚縮水甘油醚(日本化藥公司製造的商品名「XD-1000」)(d-1)10份均勻溶解於γ-丁內酯300份中,繼而,藉由膜濾器自溶液中去除異物,從而製造實施例1的感光性樹脂組成物。使用所獲得的感光性樹脂組成物進行規定的評價。3. Production of Photosensitive Resin Composition [Example 1] 95 parts of the copolymer (a-1) of Synthesis Example 1 as the resin (A) and 1,1-bis( 4-Hydroxyphenyl)-1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethane and 1,2-naphthoquinonediazide-5-sulfonic acid 27.5 parts of the condensate (mol ratio = 1:2) (b-1), 4,4'-biphenylmethanebismaleimide (c) as the maleimide group-containing compound (C) -1) 30 parts, and polyglycidyl ether of dicyclopentadiene-phenol polymer (trade name "XD-1000" manufactured by Nippon Kayaku Co., Ltd.) as a crosslinking agent (D) (d-1) 10 parts were uniformly dissolved in 300 parts of γ-butyrolactone, and then, the photosensitive resin composition of Example 1 was produced by removing foreign matter from the solution by a membrane filter. The predetermined evaluation was performed using the obtained photosensitive resin composition.

[實施例2~實施例11、以及比較例1~比較例3] 除使用下述表1所示的成分以外,與實施例1同樣地將各成分均勻混合於溶劑中,製備實施例2~實施例11、以及比較例1~比較例3的感光性樹脂組成物。使用所獲得的感光性樹脂組成物進行規定的評價。[Examples 2 to 11, and Comparative Examples 1 to 3] Except for using the components shown in the following Table 1, each component was uniformly mixed in a solvent in the same manner as in Example 1 to prepare Examples 2 to Example 11 and the photosensitive resin compositions of Comparative Examples 1 to 3. The predetermined evaluation was performed using the obtained photosensitive resin composition.

[表1]

Figure 107102505-A0304-0001
[Table 1]
Figure 107102505-A0304-0001

以下示出表1中所記載的成分的詳細情況。 《樹脂(A)》 a-1:合成例1的共聚物(a-1) a-2:甲酚酚醛清漆樹脂(間甲酚:對甲酚=6:4(莫耳比),聚苯乙烯換算重量平均分子量=6,000) 《光酸產生劑(B)》 b-1:1,1-雙(4-羥基苯基)-1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基]乙烷與1,2-萘醌二疊氮-5-磺酸的縮合物(莫耳比=1:2) 《含馬來醯亞胺基的化合物(C)》 c-1:4,4'-聯苯甲烷雙馬來醯亞胺 c-2:N,N'-間伸苯基雙馬來醯亞胺 c-3:1,6-雙馬來醯亞胺-(2,2,4-三甲基)己烷 《交聯劑(D)》 d-1:二環戊二烯·苯酚聚合物的聚縮水甘油醚(日本化藥公司製造的商品名「XD-1000」) d-2:下述式所示的聚羥甲基化三聚氰胺系交聯劑Details of the components described in Table 1 are shown below. <<Resin (A)>> a-1: Copolymer (a-1) of Synthesis Example 1 a-2: Cresol novolak resin (m-cresol:p-cresol=6:4 (mol ratio), polystyrene Ethylene conversion weight average molecular weight = 6,000) <Photoacid generator (B)> b-1: 1,1-bis(4-hydroxyphenyl)-1-[4-[1-(4-hydroxyphenyl)- Condensation product of 1-methylethyl]phenyl]ethane and 1,2-naphthoquinonediazide-5-sulfonic acid (mol ratio=1:2) "maleimide-containing compound ( C)" c-1: 4,4'-biphenylmethane bismaleimide c-2: N,N'-m-phenylene bismaleimide c-3: 1,6-bismaleimide Lysimide-(2,2,4-trimethyl)hexane <Crosslinking Agent (D)> d-1: Polyglycidyl ether of dicyclopentadiene-phenol polymer (manufactured by Nippon Kayaku Co., Ltd. The trade name of "XD-1000") d-2: Polymethylolated melamine-based crosslinking agent represented by the following formula

[化6]

Figure 02_image011
《添加劑(E)》 e-1(密接助劑):三(三甲氧基矽烷基丙基)異氰脲酸酯 e-2(鹼溶解性促進劑):4,4'-[1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基]亞乙基]雙苯酚 《溶劑(F)》 f-1:γ-丁內酯 f-2:乳酸乙酯[hua 6]
Figure 02_image011
"Additive (E)" e-1 (adhesion aid): tris(trimethoxysilylpropyl) isocyanurate e-2 (alkali solubility enhancer): 4,4'-[1-[ 4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylene]bisphenol "Solvent (F)" f-1: γ-butyrolactone f-2: Ethyl lactate ester

4. 評價 感光性樹脂組成物的評價方法如下。4. Evaluation The evaluation method of the photosensitive resin composition is as follows.

4-1. 解析性 將感光性樹脂組成物旋塗於6英吋的矽晶圓上,然後使用加熱板於120℃下加熱3分鐘,而製作厚度7 μm的均勻的樹脂膜。繼而,使用對準機(蘇斯微技術(SussMicrotec)公司製造的型式「MA-150」),介隔圖案遮罩,以波長350 nm的曝光量為800 mJ/cm2 將來自高壓水銀燈的紫外線照射於樹脂膜。繼而,使用2.38質量%濃度的四甲基氫氧化銨水溶液於23℃下對樹脂膜進行240秒鐘浸漬顯影。繼而,藉由超純水對顯影後的樹脂膜進行60秒鐘清洗,藉由空氣進行風乾之後,藉由光學顯微鏡進行觀察,將所解析的最小圖案的圖案尺寸設為解析度。4-1. Analytical The photosensitive resin composition was spin-coated on a 6-inch silicon wafer, and then heated at 120° C. for 3 minutes using a hot plate to form a uniform resin film with a thickness of 7 μm. Next, using an aligner (type "MA-150" manufactured by Suss Microtec), through a pattern mask, the ultraviolet rays from the high-pressure mercury lamp were aligned at an exposure amount of 800 mJ/cm 2 at a wavelength of 350 nm. Irradiate on the resin film. Next, the resin film was subjected to immersion development for 240 seconds at 23° C. using a 2.38 mass % concentration of tetramethylammonium hydroxide aqueous solution. Next, the developed resin film was washed with ultrapure water for 60 seconds, air-dried with air, and then observed with an optical microscope, and the pattern size of the analyzed minimum pattern was defined as the resolution.

4-2. 耐化學品性 將感光性樹脂組成物塗佈於4英吋的矽晶圓上,使用加熱板於120℃下加熱3分鐘,而製作厚度10 μm的樹脂膜。然後,藉由對流式烘箱,於120℃下加熱30分鐘,於150℃下加熱30分鐘,進而於實施例1、實施例2及比較例1中於250℃下加熱1小時,於實施例3~實施例11、以及比較例2及比較例3中於200℃下加熱1小時,而獲得硬化膜。對所獲得的硬化膜塗佈焊劑(製品名「WF-6317」,千住金屬(股)公司製造),於氮氣環境下,藉由加熱為260℃的回焊裝置(型式「STR-2010N2M-III」,千住金屬(股)公司製造)加熱3分鐘,測定硬化膜的膨潤率(%)((浸漬後的膜厚-浸漬前的膜厚)/浸漬前的膜厚×100(%))。4-2. Chemical resistance The photosensitive resin composition was coated on a 4-inch silicon wafer, and heated at 120°C for 3 minutes using a hot plate to form a resin film with a thickness of 10 μm. Then, in a convection oven, heated at 120°C for 30 minutes, heated at 150°C for 30 minutes, and further heated at 250°C for 1 hour in Example 1, Example 2 and Comparative Example 1, in Example 3 - Example 11, and the comparative example 2 and the comparative example 3 heated at 200 degreeC for 1 hour, and obtained the cured film. A flux (product name "WF-6317", manufactured by Senju Metal Co., Ltd.) was applied to the obtained cured film, and a reflow apparatus (type "STR-2010N2M-III") heated to 260°C in a nitrogen atmosphere was used. ”, manufactured by Senju Metal Co., Ltd.) was heated for 3 minutes, and the swelling ratio (%) of the cured film was measured ((film thickness after immersion−film thickness before immersion)/film thickness before immersion×100(%)).

4-3. 耐龜裂性 耐龜裂性的評價是藉由測定儲存彈性係數(E')來進行。 將感光性樹脂組成物塗佈於附帶脫模材的基板上,使用加熱板於120℃下加熱5分鐘,從而形成厚度15 μm的均勻的樹脂膜。繼而,於氮氣環境下,藉由對流式烘箱對所述樹脂膜於120℃下加熱30分鐘,於150℃下加熱30分鐘,進而於實施例1、實施例2及比較例1中於250℃下加熱1小時,於實施例3~實施例11、以及比較例2及比較例3中於200℃下加熱1小時而形成硬化膜。4-3. Crack resistance Evaluation of crack resistance was performed by measuring the storage elastic modulus (E'). The photosensitive resin composition was apply|coated on the board|substrate with a mold release material, and it heated at 120 degreeC for 5 minutes using a hotplate, and formed the uniform resin film of thickness 15 micrometers. Then, in a nitrogen atmosphere, the resin film was heated at 120° C. for 30 minutes by a convection oven, and heated at 150° C. for 30 minutes, and then in Example 1, Example 2 and Comparative Example 1 at 250° C. The cured film was formed by heating at 200° C. for 1 hour in Examples 3 to 11, and Comparative Example 2 and Comparative Example 3 by heating for 1 hour.

自所述附帶脫模材的基板剝離所述硬化膜,並將硬化膜裁切為2.5 cm×0.3 cm的長條狀。藉由熱機械分析(thermomechanical analysis,TMA)裝置(裝置名「TMA/SS6100」,SII·奈米技術(Nanotechnology)(股)公司製造)測定長條狀的硬化膜的儲存彈性係數(E')。測定時的條件如下。 卡盤距離:2 cm 測定頻率:0.1 Hz 測定溫度範圍:23℃~330℃,升溫速度:5℃/minThe cured film was peeled off from the release material-attached substrate, and the cured film was cut into a 2.5 cm×0.3 cm strip. The storage elastic modulus (E') of the elongated cured film was measured by a thermomechanical analysis (TMA) apparatus (apparatus name "TMA/SS6100", manufactured by SII Nanotechnology Co., Ltd.). . The measurement conditions are as follows. Chuck distance: 2 cm Measuring frequency: 0.1 Hz Measuring temperature range: 23℃~330℃, heating rate: 5℃/min

[表2]

Figure 107102505-A0304-0002
Figure 107102505-A0304-0003
[Table 2]
Figure 107102505-A0304-0002
Figure 107102505-A0304-0003

自含有含馬來醯亞胺基的化合物(C)的感光性樹脂組成物所獲得的硬化膜與自未含有含馬來醯亞胺基的化合物(C)的感光性樹脂組成物所獲得的硬化膜相比,即便為同等的耐化學品性,硬化溫度以上(實施例1~實施例2、以及比較例1為250℃以上,實施例3~實施例11、以及比較例2~比較例3為200℃以上)的高溫區域中的儲存彈性係數(E')亦低,即交聯密度低,故判斷為耐龜裂性優異。Cured film obtained from a photosensitive resin composition containing a maleimide group-containing compound (C) and a cured film obtained from a photosensitive resin composition containing no maleimide group-containing compound (C) Compared with the cured film, even if it is the same chemical resistance, the curing temperature is higher than the curing temperature (Examples 1 to 2 and Comparative Example 1 are 250°C or more, Examples 3 to 11, and Comparative Examples 2 to Comparative Examples Since the storage elastic modulus (E') in the high temperature region where 3 is 200° C. or higher is also low, that is, the crosslinking density is low, it is judged that the crack resistance is excellent.

none

圖1表示實施例及比較例的硬化膜的儲存彈性係數(E')。 FIG. 1 shows the storage elastic modulus (E') of the cured films of Examples and Comparative Examples.

圖2表示實施例的硬化膜的儲存彈性係數(E')。 FIG. 2 shows the storage elastic modulus (E') of the cured film of the Example.

圖3表示實施例的硬化膜的儲存彈性係數(E')。 FIG. 3 shows the storage elastic modulus (E') of the cured film of the Example.

圖4表示比較例的硬化膜的儲存彈性係數(E')。 FIG. 4 shows the storage elastic modulus (E') of the cured film of the comparative example.

Claims (8)

一種感光性樹脂組成物,其含有:具有酚性羥基的樹脂(A),其中所述具有酚性羥基的樹脂(A)為聚合物(a1),所述聚合物(a1)係選自具有酚性羥基的自由基聚合性單體的均聚物或共聚物、及具有酚性羥基的自由基聚合性單體與其他自由基聚合性單體的共聚物中的至少一種、光酸產生劑(B)、以及含馬來醯亞胺基的化合物(C)。 A photosensitive resin composition comprising: a resin (A) having a phenolic hydroxyl group, wherein the resin (A) having a phenolic hydroxyl group is a polymer (a1) selected from the group consisting of At least one of a homopolymer or copolymer of a radically polymerizable monomer having a phenolic hydroxyl group, and a copolymer of a radically polymerizable monomer having a phenolic hydroxyl group and another radically polymerizable monomer, and a photoacid generator (B), and the maleimide group-containing compound (C). 如申請專利範圍第1項所述的感光性樹脂組成物,其中,所述含馬來醯亞胺基的化合物(C)包含具有兩個以上馬來醯亞胺基的化合物(C1)。 The photosensitive resin composition according to claim 1, wherein the maleimide group-containing compound (C) includes a compound (C1) having two or more maleimide groups. 如申請專利範圍第1項或第2項所述的感光性樹脂組成物,其進而含有交聯劑(D)(其中,將含馬來醯亞胺基的化合物(C)除外)。 The photosensitive resin composition according to claim 1 or claim 2, further comprising a crosslinking agent (D) (however, the maleimide group-containing compound (C) is excluded). 如申請專利範圍第3項所述的感光性樹脂組成物,其中,所述交聯劑(D)包含選自環氧系交聯劑(D1)、及具有至少兩個由-CH2OR表示的基(所述式中,R為氫原子、碳數1~10的烷基或碳數2~10的醯基)的交聯劑(D2)中的至少一種交聯劑。 The photosensitive resin composition according to claim 3, wherein the crosslinking agent (D) is selected from epoxy-based crosslinking agents (D1) and has at least two components represented by -CH 2 OR (in the formula, R is a hydrogen atom, an alkyl group with 1 to 10 carbons or an acyl group with 2 to 10 carbons) at least one crosslinking agent in the crosslinking agent (D2). 如申請專利範圍第1項或第2項所述的感光性樹脂組成物,其中,所述光酸產生劑(B)包含醌二疊氮化合物(B1)。 The photosensitive resin composition according to claim 1 or claim 2, wherein the photoacid generator (B) contains a quinonediazide compound (B1). 一種硬化膜的製造方法,其包括:於支撐體上形成如申請專利範圍第1項至第5項中任一項所述的感光性樹脂組成物的樹脂膜的步驟;對所述樹脂膜進行曝光的步驟;藉由鹼性顯影液對所述樹脂膜進行顯影並形成圖案化樹脂膜的步驟;以及對所述圖案化樹脂膜進行加熱的步驟。 A method for producing a cured film, comprising: forming a resin film of the photosensitive resin composition as described in any one of the first to fifth items on a support on a support; the step of exposing; the step of developing the resin film with an alkaline developer to form a patterned resin film; and the step of heating the patterned resin film. 一種硬化膜,其是由如申請專利範圍第1項至第5項中任一項所述的感光性樹脂組成物所形成。 A cured film formed from the photosensitive resin composition as described in any one of claim 1 to claim 5. 一種電子零件,其具有申請專利範圍第7項所述的硬化膜。 An electronic component having the cured film described in claim 7 of the scope of application.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5080965A (en) * 1987-11-04 1992-01-14 Hitachi, Ltd. Prepreg from poly(p-hydroxystyrene), epoxy-modified polybutadiene and maleimide
TW200947123A (en) * 2008-03-14 2009-11-16 Nagase Chemtex Corp Radiation-sensitive resin composition
JP2013190698A (en) * 2012-03-14 2013-09-26 Asahi Kasei E-Materials Corp Photosensitive resin composition, cured relief pattern-manufacturing method, and semiconductor device
TW201538614A (en) * 2014-04-01 2015-10-16 Taiyo Ink Mfg Co Ltd Curable resin composition, curable resin composition for forming permanent coating film, dry film and printed wiring board

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05257273A (en) * 1992-03-11 1993-10-08 Fuji Photo Film Co Ltd Positive type photoresist composition
JP5981737B2 (en) * 2012-03-14 2016-08-31 旭化成株式会社 Photosensitive resin composition and method for producing cured relief pattern
JP6271272B2 (en) * 2014-01-31 2018-01-31 昭和電工株式会社 Radiation-sensitive composition and method for producing radiation lithography structure
JP6506184B2 (en) * 2016-01-21 2019-04-24 富士フイルム株式会社 Photosensitive resin composition, method of producing cured product, cured film, display device, and touch panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5080965A (en) * 1987-11-04 1992-01-14 Hitachi, Ltd. Prepreg from poly(p-hydroxystyrene), epoxy-modified polybutadiene and maleimide
TW200947123A (en) * 2008-03-14 2009-11-16 Nagase Chemtex Corp Radiation-sensitive resin composition
JP2013190698A (en) * 2012-03-14 2013-09-26 Asahi Kasei E-Materials Corp Photosensitive resin composition, cured relief pattern-manufacturing method, and semiconductor device
TW201538614A (en) * 2014-04-01 2015-10-16 Taiyo Ink Mfg Co Ltd Curable resin composition, curable resin composition for forming permanent coating film, dry film and printed wiring board

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