TWI755034B - Device substrate and manufacturing method thereof - Google Patents

Abstract

An element substrate includes a drive circuit substrate, a connection layer, and a light-emitting element substrate. The light-emitting element substrate is fixed to the driving circuit substrate by the connection layer. The driving circuit substrate includes a first substrate, a driving circuit, a protective layer, and a plurality of first pads. The protective layer covers the driving circuit. The first pads are located on the protective layer and are electrically connected to the driving circuit. The connection layer includes a plurality of electrical connection structures and at least one auxiliary structure. The electrical connection structures are respectively formed on the first pads. The auxiliary structure is formed on the protective layer. The light-emitting element substrate includes an insulating layer, a wire layer, a plurality of second pads, and a plurality of light-emitting elements. The second pads are connected to the electrical connection structures.

Description

Element substrate and manufacturing method thereof

The present invention relates to an element substrate, and more particularly, to an element substrate having a light-emitting element and a method for manufacturing the same.

An-isotropic Conductive Film (ACF) is a common connection medium. Generally speaking, the anisotropic conductive film includes a glue material and conductive particles distributed in the glue material. A whole piece of anisotropic conductive film is attached to the circuit substrate and covers a plurality of pads on the circuit substrate, and then the chip is hot-pressed on the anisotropic conductive film, so that the chip can be electrically connected to the circuit substrate. The conductive particles in the anisotropic conductive film are connected to each other after hot pressing, so that electrons can pass through the anisotropic conductive film through the conductive particles connected together. However, during the hot pressing process, due to the large area of the anisotropic conductive film, the anisotropic conductive film has poor debinding effect (or poor fluidity), resulting in the conductive particles failing to flow in the expected direction, which is easy to The different pads are connected to each other, causing the different pads to short-circuit. In addition, the process of bonding by the anisotropic conductive film needs to be performed in a high temperature and high pressure environment, and it is necessary to apply pressure to the conductive particles in the anisotropic conductive film with bumps. However, it is not easy to fabricate a large-area bump array, and the bumps are easily damaged due to stress concentration in the environment of high temperature and high pressure. Therefore, anisotropic conductive films are used to bond and integrate large-area electronic components. not realistic.

The present invention provides an element substrate, and the light-emitting element substrate can be preferably connected to the driving circuit substrate.

The present invention provides a manufacturing method of an element substrate, and the light-emitting element substrate can be preferably connected to a driving circuit substrate.

At least one embodiment of the present invention provides an element substrate, which includes a driving circuit substrate, a connection layer, and a light-emitting element substrate. The connection layer is located on the driving circuit substrate. The light-emitting element substrate is fixed to the driving circuit substrate through the connection layer. The driving circuit substrate includes a first substrate, a driving circuit, a protective layer and a plurality of first pads. The driving circuit is located on the first substrate. The protective layer covers the driving circuit. The plurality of first pads are located on the protective layer and are electrically connected to the driving circuit. The connection layer includes a plurality of electrical connection structures and at least one auxiliary structure. The electrical connection structures are respectively formed on the first pads. The auxiliary structure is formed on the protective layer and separated from the electrical connection structure. The light-emitting element substrate includes at least one insulating layer, at least one wire layer, a plurality of second pads and a plurality of light-emitting elements. The wire layer is located in the insulating layer. The plurality of second pads are located on the side of the insulating layer facing the connection layer and connected to the electrical connection structure. The light-emitting element is arranged on the insulating layer and is electrically connected to the second pad through the wire layer.

At least one embodiment of the present invention provides a method for manufacturing an element substrate, including: providing a driving circuit substrate, forming a first connection material layer on the driving circuit substrate, patterning the first connection material layer and forming a plurality of electrical connection structures, and The light-emitting element substrate is arranged on the electrical connection structure. The driving circuit substrate includes a first substrate, a driving circuit, a protective layer and a plurality of first pads. The driving circuit is located on the first substrate. The protective layer covers the driving circuit. The plurality of first pads are located on the protective layer and are electrically connected to the driving circuit. A plurality of electrical connection structures are respectively formed on the plurality of first pads. The light-emitting element substrate includes at least one insulating layer, at least one wire layer, a plurality of second pads and a plurality of light-emitting elements. The wire layer is located in the insulating layer. The plurality of second pads are located on the side of the insulating layer facing the electrical connection structure, and are connected to the electrical connection structure. The plurality of light emitting elements are disposed on the insulating layer and are electrically connected to the plurality of second pads through the wire layer.

1A to 1F are schematic cross-sectional views of a method for manufacturing a device substrate according to an embodiment of the present invention.

Referring to FIG. 1A , a driving circuit substrate 100 is provided. The driving circuit substrate 100 includes a first substrate 110 , a driving circuit 120 , a protective layer 130 and a plurality of first pads 140 .

The driving circuit 120 is located on the first substrate 110 . The protective layer 130 covers the driving circuit 120 . The plurality of first pads 140 are located on the protective layer 130 and are electrically connected to the driving circuit 120 . In this embodiment, the driving circuit 120 includes at least one conductive layer 122 and at least one insulating layer 124 . In some embodiments, the driving circuit 120 further includes other active elements and passive elements.

The first connection material layer 200 is formed on the driving circuit substrate 100 . The method for forming the first connection material layer 200 includes attaching a whole piece of the first connection material layer 200 on the driving circuit substrate 100 or coating the first connection material layer 200 on the driving circuit substrate 100 . In some embodiments, the first connection material layer 200 includes a first photoresist material, such as a positive photoresist or a negative photoresist. In some embodiments, the first photoresist material includes a resin, a sensitizer, a solvent, and a conductive material. In some embodiments, the first photoresist material includes a conductive polymer.

In some embodiments, the viscosity (Viscosity) of the first connection material layer 200 is 1˜250 Pa s.

In some embodiments, after the first connection material layer 200 is formed on the driving circuit substrate 100 , a soft bake process is performed to remove the solvent in the first connection material layer 200 . The temperature of the soft baking process is, for example, 60 to 220 degrees.

Referring to FIG. 1B and FIG. 1C , the first connection material layer 200 is patterned to form a plurality of electrical connection structures 210 .

In this embodiment, the method for patterning the first connection material layer 200 includes a lithography process. The position of the electrical connection structure 210 is defined on the first connection material layer 200 by the first mask O1 , and then a developing process is performed to remove part of the first connection material layer 200 . The first mask O1 has a light-transmitting region TR1 and a non-light-transmitting region NTR1. In this embodiment, the first connection material layer 200 includes a first photoresist material, and the first photoresist material is a negative photoresist, the electrical connection structure 210 is a cured first photoresist material, and the position corresponds to the first photoresist material. The light-transmitting region TR1 of the mask O1.

Each of the first pads 140 overlaps a corresponding one of the electrical connection structures 210 respectively, and the electrical connection structures 210 are not connected to each other. In other words, even if the conductive materials in the single connection structure 210 are connected to each other in the horizontal direction to form a circuit, the adjacent first pads 140 will not be short-circuited accordingly. In some embodiments, unlike anisotropic conductive materials, a single connection structure 210 can conduct electricity in both vertical and horizontal directions. In some embodiments, the connection structure 210 can conduct electricity without an additional hot pressing process. In some embodiments, the sheet resistance of the connection structure 210 is <100 Ω/□.

Referring to FIG. 1D and FIG. 1E , a second connection material layer 300 is formed on the driving circuit substrate 100 . In some embodiments, after the second connection material layer 300 is formed on the driving circuit substrate 100 , a soft bake process is performed to remove the solvent in the second connection material layer 300 . The temperature of the soft baking process is, for example, 60 to 220 degrees. In some embodiments, the second connection material layer 300 is formed on the driving circuit substrate 100 and the electrical connection structure 210 .

The second connection material layer 300 is patterned to form the auxiliary structure 310 . In this embodiment, the method for patterning the second connection material layer 300 includes a lithography process. The position of the electrical connection structure 210 is defined on the second connection material layer 300 by the second mask O2 , and then a developing process is performed to remove part of the second connection material layer 300 . The second mask O2 has a light-transmitting region TR2 and a non-light-transmitting region NTR2. In this embodiment, the second connection material layer 300 includes a second photoresist material, and the second photoresist material is a negative photoresist. The auxiliary structure 310 is a cured second photoresist material, and the position corresponds to the light-transmitting region TR2 of the second mask O2 . Although in this embodiment, the first photoresist material and the second photoresist material are both negative photoresist, the invention is not limited to this. In other embodiments, the first photoresist material and the second photoresist material are both positive photoresist. In other embodiments, one of the first photoresist material and the second photoresist material is a positive photoresist, and the other is a negative photoresist.

In this embodiment, the auxiliary structure 310 includes an insulating material. The auxiliary structure 310 includes a plurality of openings OP, and the electrical connection structures 210 are respectively located in the openings OP. In some embodiments, the first mask O1 and the second mask O2 have opposite patterns. In other words, the position of the light-transmitting region TR1 of the first mask O1 corresponds to the non-light-transmitting region of the second mask O2 The position of NTR2, and the position of the light-transmitting region TR2 of the second mask O2 corresponds to the position of the non-light-transmitting region NTR1 of the first mask O1.

In this embodiment, both the electrical connection structure 210 and the auxiliary structure 310 are formed by a lithography process, but the invention is not limited thereto. In other embodiments, the electrical connection structure 210 and the auxiliary structure 310 define the pattern of the conduction region and/or the pattern of the insulating region by laser, plasma or other physical/chemical means.

In some embodiments, the auxiliary structure 310 is separated from the electrical connection structure 210 , in other words, the auxiliary structure 310 does not cover the upper surface of the electrical connection structure 210 . In some embodiments, the height of the auxiliary structure 310 and the electrical connection structure 210 are approximately the same.

Referring to FIG. 1F , the light-emitting element substrate 400 is disposed on the electrical connection structure 210 . In this embodiment, the connection layer CL includes an electrical connection structure 210 and an auxiliary structure 310 . The connection layer CL is located on the driving circuit substrate 100, and the light-emitting element substrate 400 is fixed on the driving circuit substrate 100 through the connection layer CL. In some embodiments, the adhesion of the electrical connection structure 210 is 100-2000 gf/inches, and the adhesion of the auxiliary structure 310 is 100-6000 gf/inches.

The light-emitting element substrate 400 includes at least one insulating layer 410 , at least one wire layer 420 , a plurality of second pads 430 and a plurality of light-emitting elements 440 . The wire layer 420 is located in the insulating layer 410 . The plurality of second pads 430 are located on the side of the insulating layer 410 facing the connection layer CL. In this embodiment, the second pad 430 is located on the side of the insulating layer 410 facing the electrical connection structure 210 and is connected to the electrical connection structure 210 .

The plurality of light emitting elements 440 are disposed on the insulating layer 410 and are electrically connected to the plurality of second pads 430 through the wire layer 420 . In this embodiment, the light-emitting element 440 is an organic light-emitting diode, and includes a first electrode 442 , a second electrode 446 , and an organic light-emitting layer 444 located between the first electrode 442 and the second electrode 446 . In some embodiments, the first electrode 442 and the second electrode 446 include a hole injection layer (HIL), a hole conducting layer (HTL), an organic light emitting layer 444, a hole blocking layer (HBL), an electron Transport Layer (ETL) and Electron Injection Layer (EIL). In this embodiment, the second electrodes 446 are common electrodes, and each of the second electrodes 446 overlaps the plurality of organic light-emitting layers 444 .

In this embodiment, the light-emitting element substrate 400 further includes a flexible substrate 450 . The flexible substrate 450 is located on the second electrode 446 .

In this embodiment, the light-emitting element substrate 400 and the driving circuit substrate 100 can be fabricated separately, and then connected together by the connection layer CL. In this embodiment, the light-emitting element substrate 400 and the driving circuit substrate 100 can be bonded together in a low temperature (eg, room temperature (about 25° C.)) environment, which can reduce the probability of failure of the light-emitting element substrate 400 and the driving circuit substrate 100 .

FIG. 2 is a schematic top view of a connection layer according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 2 uses the element numbers and part of the content of the embodiment of FIG. 1A to FIG. 1F , wherein the same or similar reference numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

Referring to FIG. 2 , in the present embodiment, the first connection material layer is formed on the driving circuit substrate 100 in one piece, for example, and then patterned into an electrical connection structure 210 having a desired shape. The second connection material layer is, for example, integrally formed on the driving circuit substrate 100 , and then patterned into an auxiliary structure 300 having a desired shape.

The plurality of electrical connection structures 210 are respectively located in the plurality of openings OP of the auxiliary structure 300 .

3A to 3B are schematic cross-sectional views of a method for manufacturing a device substrate according to an embodiment of the present invention, wherein FIG. 3A continues the steps of FIG. 1C .

Referring to FIG. 3A and FIG. 3B , a second connection material layer 300 is formed on the driving circuit substrate 100 . In some embodiments, after the second connection material layer 300 is formed on the driving circuit substrate 100 , a soft bake process is performed to remove the solvent in the second connection material layer 300 . The temperature of the soft baking process is, for example, 60 to 220 degrees. In some embodiments, the second connection material layer 300 is formed on the driving circuit substrate 100 and the electrical connection structure 210 .

The second connection material layer 300 is patterned to form the auxiliary structure 310 . In this embodiment, the method for patterning the second connection material layer 300 includes a lithography process. The position of the electrical connection structure 210 is defined on the second connection material layer 300 by the first mask O1 , and then a developing process is performed to remove part of the second connection material layer 300 . In this embodiment, the second connection material layer 300 includes a second photoresist material, and the second photoresist material is a positive photoresist. The auxiliary structure 310 is a cured second photoresist material, and corresponds to the opaque region NTR1 of the first mask O1 . In this embodiment, the first photoresist material is a negative photoresist, and the second photoresist material is a positive photoresist. The first photoresist material and the second photoresist material are patterned by the same first mask O1, This saves manufacturing costs. In other embodiments, the first photoresist material is a positive photoresist, and the second photoresist material is a negative photoresist.

In this embodiment, the size of the opening OP of the auxiliary structure 310 is made larger than the size of the corresponding electrical connection structure 210 by controlling the exposure time or the developing time of the lithography process. Therefore, the auxiliary structure 310 and the electrical connection structure 210 are separated from each other, and the auxiliary structure 310 does not cover the upper surface of the electrical connection structure 210 .

In this embodiment, the light-emitting element substrate 400 and the driving circuit substrate 100 can be bonded together in a low temperature (eg, normal temperature) environment, which can reduce the probability of failure of the light-emitting element substrate 400 and the driving circuit substrate 100 .

4A to 4G are schematic cross-sectional views of a method for manufacturing a device substrate according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 2 uses the element numbers and part of the content of the embodiment of FIG. 1A to FIG. 1F , wherein the same or similar reference numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

Referring to FIG. 4A , a driving circuit substrate 100 is provided. The driving circuit substrate 100 includes a first substrate 110 , a driving circuit 120 , a protective layer 130 and a plurality of first pads 140 , wherein the specific structure of the driving circuit 120 is omitted in FIG. 4A .

The driving circuit 120 is located on the first substrate 110 . The protective layer 130 covers the driving circuit 120 . The plurality of first pads 140 are located on the protective layer 130 and are electrically connected to the driving circuit 120 .

The first connection material layer 200 is formed on the driving circuit substrate 100 . The method for forming the first connection material layer 200 includes attaching a whole piece of the first connection material layer 200 on the driving circuit substrate 100 or coating the first connection material layer 200 on the driving circuit substrate 100 . The first connection material layer 200 includes a first photoresist material, and the first photoresist material is, for example, a positive photoresist or a negative photoresist. In some embodiments, the first photoresist material includes a resin, a sensitizer, a solvent, and a conductive material.

Referring to FIG. 4B and FIG. 4C , the first connection material layer 200 is patterned to form a plurality of electrical connection structures 210 . In this embodiment, the first connection material layer 200 is patterned to form a plurality of electrical connection structures 210 and a plurality of auxiliary structures 220 .

In this embodiment, the method for patterning the first connection material layer 200 includes a lithography process. Positions of the electrical connection structure 210 and the auxiliary structure 220 are defined on the first connection material layer 200 by the first mask O1 , and then a developing process is performed to remove part of the first connection material layer 200 . The first mask O1 has a light-transmitting region TR1 and a light-transmitting region NTR1. In this embodiment, the first connection material layer 200 includes a first photoresist material, and the first photoresist material is a negative photoresist. The electrical connection structure 210 and the auxiliary structure 220 include the same material. The electrical connection structure 210 and the auxiliary structure 220 are cured first photoresist materials, and their positions correspond to the light-transmitting regions TR1 of the first mask O1 . In other embodiments, the first photoresist material is a positive photoresist, and the positions of the electrical connection structure 210 and the auxiliary structure 220 correspond to the opaque region NTR1 of the first mask O1 .

Each of the first pads 140 overlaps a corresponding one of the electrical connection structures 210 respectively. The auxiliary structure 220 is formed on the protective layer 130 and is a floating electrode. The electrical connection structures 210 are not connected to each other, and the electrical connection structures 210 and the auxiliary structures 220 are not connected to each other.

Referring to FIG. 4D, an interposer substrate TS is provided. The insulating layer 410 , the wire layer 420 and the second pad 430 are formed on the interposer substrate TS. The second pad 430 is located on the side of the insulating layer 410 close to the interposer substrate TS. In some embodiments, the numbers of the insulating layers 410 , the wire layers 420 and the second pads 430 can be adjusted according to actual requirements.

Referring to FIG. 4E , a plurality of test traces TL are formed on the insulating layer 410 . The light-emitting element 440 is disposed on the at least one insulating layer, and the light-emitting element 440 is electrically connected to the test line TL and the second pad 430 . In this embodiment, the light emitting element 440 includes a micro light emitting diode (Micro LED) or a sub-millimeter light emitting diode (Mini LED). The light emitting element 440 is tested through the test trace TL.

Referring to FIG. 4F , the test trace TL is selectively removed. The interposer substrate TS is removed to form the light emitting element substrate 400 . In this embodiment, the light-emitting element substrate 400 does not include the test wiring TL, but the invention is not limited to this. In other embodiments, the light-emitting element substrate 400 includes test traces TL.

Referring to FIG. 4G , the light-emitting element substrate 400 is disposed on the electrical connection structure 210 . In this embodiment, the connection layer CL includes an electrical connection structure 210 and an auxiliary structure 310 . The connection layer CL is located on the driving circuit substrate 100, and the light-emitting element substrate 400 is fixed on the driving circuit substrate 100 through the connection layer CL. In some embodiments, the adhesion between the electrical connection structure 210 and the auxiliary structure 310 is 100˜6000 gf/inches.

In this embodiment, the light-emitting element substrate 400 and the driving circuit substrate 100 can be fabricated separately, and then connected together by the connection layer CL. In this embodiment, the light-emitting element substrate 400 and the driving circuit substrate 100 can be bonded together in a low temperature (eg, room temperature) environment, which can reduce the probability of failure of the light-emitting element substrate 400 and the driving circuit substrate 100 .

FIG. 5 is a schematic top view of a connection layer according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 5 uses the element numbers and part of the content of the embodiment of FIG. 4A to FIG. 4G , wherein the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

Referring to FIG. 5 , in this embodiment, the first connection material layer is formed on the driving circuit substrate 100 as a whole, and then patterned into an electrical connection structure 210 and an auxiliary structure 220 having a desired shape. The electrical connection structure 210 and the auxiliary structure 220 are separated from each other.

6 is a schematic cross-sectional view of a device substrate according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 5 uses the element numbers and part of the content of the embodiment of FIG. 4A to FIG. 4G , wherein the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

Referring to FIG. 6 , in this embodiment, the first connecting material layer includes solvent, resin and silver halide. Solvents include cyanides, thiocyanates, thiosulfates, thioureas, amines, ammonium salts, sulfites, thioethers, crown ethers, or other materials or combinations thereof. In some embodiments, the resin is viscous and includes natural resins, epoxy resins, ion exchange resins, or other materials or combinations thereof. Silver halides include AgBr, AgCl, AgI, _AgF2 , AgF, _Ag2F or other materials.

In this embodiment, after patterning the first connection material layer, a heating process is performed to reduce the silver halide to silver. The method of heating the silver halide is, for example, baking heating, and the baking temperature is, for example, 60°C to 220°C. After the silver halide is heated, silver crystals are formed, and the resistance value is greatly reduced, so as to form the electrical connection structure 210a and the auxiliary structure 220a.

In this embodiment, the light-emitting element substrate 400 and the driving circuit substrate 100 can be fabricated separately, and then connected together by the connection layer CL. In this embodiment, the light-emitting element substrate 400 and the driving circuit substrate 100 can be bonded together in a low temperature (eg, room temperature) environment, which can reduce the probability of failure of the light-emitting element substrate 400 and the driving circuit substrate 100 .

7A and 7B are schematic cross-sectional views of a method for manufacturing a device substrate according to an embodiment of the present invention. It must be noted here that the embodiments of FIG. 7A and FIG. 7B use the element numbers and part of the content of the embodiment of FIG. 6 , wherein the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

Referring to FIG. 7A , in this embodiment, the first connecting material layer includes solvent, resin and silver halide. The first connection material layer is patterned to form the electrical connection structure 210a. In this embodiment, an electrical connection structure 210a having a desired pattern is formed in the first connection material layer by a laser process LS. The silver halide in the portion of the first connection material layer heated by the laser is reduced to silver and transformed into an electrically conductive electrical connection structure 210a, and the portion not heated by the laser is an insulating auxiliary structure 220b. In this embodiment, the electrical connection structure 210a and the auxiliary structure 220b are connected to each other.

7B , the light emitting element substrate 400 is disposed on the electrical connection structure 210a and the auxiliary structure 220b, and the light emitting element substrate 400 is fixed on the driving circuit substrate 100 by the electrical connection structure 210a and the auxiliary structure 220b.

In this embodiment, the light-emitting element substrate 400 and the driving circuit substrate 100 can be fabricated separately, and then connected together by the connection layer CL. In this embodiment, the light-emitting element substrate 400 and the driving circuit substrate 100 can be bonded together in a low temperature (eg, room temperature) environment, which can reduce the probability of failure of the light-emitting element substrate 400 and the driving circuit substrate 100 .

8 is a schematic cross-sectional view of a driving circuit substrate according to an embodiment of the present invention.

Referring to FIG. 8 , in this embodiment, the driving circuit substrate 120 is formed by stacking multilayer circuit structures 120 a , for example, the circuit structures 120 a are connected together by a connection layer (not shown in FIG. 8 ) similar to the previous embodiment, or are connected in other ways. In this embodiment, each circuit structure 120 a includes a conductive layer 122 and an insulating layer 124 , and some circuit structures also include an active element T. As shown in FIG. The active element T includes a source-drain electrode SD, a gate electrode G, a channel layer CH and a gate insulating layer GI. The gate electrode G overlaps with the channel layer CH, and a gate insulating layer GI is spaced between the gate electrode G and the channel layer CH. The source and drain electrodes SD are electrically connected to the channel layer CH. In some embodiments, the active element T is electrically connected to the light-emitting element in the light-emitting element substrate.

In this embodiment, the driving circuit substrate 120 is formed by stacking the multi-layer circuit structures 120 a, thereby reducing the area of the driving circuit substrate 120 .

9 is a schematic cross-sectional view of a first connecting material layer according to an embodiment of the present invention.

Referring to FIG. 9 , in this embodiment, the upper and lower sides of the first connecting material layer 200 have release films PF. The method of forming the first connecting material layer 200 on the driving circuit substrate includes firstly peeling off one of the release films PF, then sticking the first connecting material layer 200 on the driving circuit substrate, and finally peeling off another release film PF pf.

In this embodiment, the first connecting material layer 200 sandwiched by two release films PF includes resin and conductive material. When the first connection material layer 200 is attached to the driving circuit substrate, a solvent is additionally added to the first connection material layer 200 to adjust the viscosity of the first connection material layer 200 .

In this embodiment, after the first connection material layer 200 is attached to the driving circuit substrate, the conductivity of the predetermined area is reduced by the post-processing process, so that the predetermined area can achieve an insulating effect, thereby defining the electrical connection structure and auxiliary structure. In some embodiments, the aforementioned post-processing process is, for example, a plasma treatment process, a laser lift-off process, or other similar processes.

In conclusion, the light-emitting element substrate and the driving circuit substrate can be joined together in a low temperature environment, which can reduce the probability of failure of the light-emitting element substrate and the driving circuit substrate.

100: Drive circuit substrate 110: The first substrate 120: Drive circuit 120a: Circuit Structure 122: Conductive layer 124: Insulation layer 130: Protective layer 140: first pad 200: first connecting material layer 210, 210a: Electrical connection structure 220, 220a, 220b, 310: Auxiliary structures 300: Second connecting material layer 400: Light-emitting element substrate 410: Insulation layer 420: wire layer 430:Second pad 440: Light-emitting element 442: First Electrode 444: Organic Light Emitting Layer 446: Second Electrode 450: flexible substrate CH: channel layer CL: connection layer G: gate GI: gate insulating layer LS: Laser Process NTR1, NTR2: Opaque area O1: First mask O2: Second mask PF: release film SD: source drain T: Active element TR1, TR2: light transmission area

1A to 1F are schematic cross-sectional views of a method for manufacturing a device substrate according to an embodiment of the present invention. FIG. 2 is a schematic top view of a connection layer according to an embodiment of the present invention. 3A to 3B are schematic cross-sectional views of a method for manufacturing a device substrate according to an embodiment of the present invention. 4A to 4G are schematic cross-sectional views of a method for manufacturing a device substrate according to an embodiment of the present invention. FIG. 5 is a schematic top view of a connection layer according to an embodiment of the present invention. 6 is a schematic cross-sectional view of a device substrate according to an embodiment of the present invention. 7A and 7B are schematic cross-sectional views of a method for manufacturing a device substrate according to an embodiment of the present invention. 8 is a schematic cross-sectional view of a driving circuit substrate according to an embodiment of the present invention. 9 is a schematic cross-sectional view of a first connecting material layer according to an embodiment of the present invention.

100: Drive circuit substrate

110: The first substrate

120: Drive circuit

122: Conductive layer

124: Insulation layer

130: Protective layer

140: first pad

210: Electrical connection structure

310: Auxiliary Structure

400: Light-emitting element substrate

410: Insulation layer

420: wire layer

430:Second pad

440: Light-emitting element

442: First Electrode

444: Organic Light Emitting Layer

446: Second Electrode

450: flexible substrate

CL: connection layer

Claims (6)

An element substrate, comprising: a driving circuit substrate, comprising: a first substrate; a driving circuit on the first substrate; a protective layer covering the driving circuit; and a plurality of first pads on the protective layer on the drive circuit and electrically connected to the drive circuit; a connection layer located on the drive circuit substrate and comprising: a plurality of electrical connection structures respectively formed on the first pads; and at least one auxiliary structure formed on the On the protective layer, and the at least one auxiliary structure is separated from the electrical connection structures, wherein the electrical connection structures include a cured first photoresist material, and the at least one auxiliary structure includes a cured second photoresist material , one of the first photoresist material and the second photoresist material is a positive photoresist, the other is a negative photoresist; and a light-emitting element substrate is fixed on the driving circuit substrate by the connection layer, and It includes: at least one insulating layer; at least one wire layer, located in the at least one insulating layer; a plurality of second pads, located on the side of the at least one insulating layer facing the connection layer, and connected to the electrical connection structures ;as well as A plurality of light-emitting elements are disposed on the at least one insulating layer, and the light-emitting elements are electrically connected to the second pads through the at least one wire layer. The device substrate of claim 1, wherein the at least one auxiliary structure includes a plurality of openings, and the electrical connection structures are respectively located in the openings. The device substrate of claim 1, wherein the at least one auxiliary structure includes an insulating material. The device substrate of claim 1, wherein each of the first pads respectively overlaps a corresponding one of the electrical connection structures, and the electrical connection structures are not connected to each other. A method for manufacturing an element substrate, comprising: providing a driving circuit substrate, the driving circuit substrate comprising: a first substrate; a driving circuit on the first substrate; a protective layer covering the driving circuit; and a plurality of first substrates a pad located on the protective layer and electrically connected to the driving circuit; forming a first connecting material layer on the driving circuit substrate, wherein the first connecting material layer includes a first photoresist material; patterning The first connection material layer forms a plurality of electrical connection structures, wherein the electrical connection structures are respectively formed on the first pads; a second connection material layer is formed on the driving circuit substrate, and the second connection The material layer includes a second photoresist material, and the first photoresist material and the second photoresist material are in the middle One of them is a positive photoresist, and the other is a negative photoresist; the second connection material layer is patterned to form at least one auxiliary structure, wherein the at least one auxiliary structure includes an insulating material, and the at least one auxiliary structure includes a plurality of openings, and the electrical connection structures are respectively located in the openings; and a light-emitting element substrate is arranged on the electrical connection structures, and the light-emitting element substrate includes: at least one insulating layer; at least one wire layer, located in the at least one In the insulating layer; a plurality of second pads located on the side of the at least one insulating layer facing the electrical connection structures and connected to the electrical connection structures; and a plurality of light emitting elements disposed on the at least one insulating layer layer, and the light-emitting elements are electrically connected to the second pads through the at least one wire layer. The method for manufacturing a component substrate according to claim 5, wherein the method for forming the first connection material layer on the driving circuit substrate comprises attaching a whole piece of the first connection material layer on the driving circuit substrate or attaching the first connection material layer to the driving circuit substrate. The first connection material layer is coated on the driving circuit substrate.

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