TWI743704B - Substrate processing device and substrate processing method - Google Patents

Substrate processing device and substrate processing method Download PDF

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TWI743704B
TWI743704B TW109108325A TW109108325A TWI743704B TW I743704 B TWI743704 B TW I743704B TW 109108325 A TW109108325 A TW 109108325A TW 109108325 A TW109108325 A TW 109108325A TW I743704 B TWI743704 B TW I743704B
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substrate
thermoplastic resin
outer peripheral
peeling
supply nozzle
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TW202042295A (en
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松下淳
長嶋裕次
土持鷹彬
秋本紗希
林航之介
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日商芝浦機械電子裝置股份有限公司
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
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    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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Abstract

提供一種能夠對於基板尺寸之縮小作抑制的基板處理裝置及基板處理方法。 實施形態之基板處理裝置(10)，係具備有：台(30)，係支持成為蝕刻對象之基板(W)；和加熱器(51a1)或加熱器(52a)，係使熱可塑性樹脂軟化；和供給噴嘴(52)，係相對於藉由台(30)而被作支持的基板(W)，而進行相對移動，並將藉由加熱器(51a1)或加熱器(52a)而軟化了的熱可塑性樹脂，供給至藉由台(30)而被作支持的基板(W)之外周端部(A1)處。Provided is a substrate processing apparatus and a substrate processing method that can suppress the reduction in the size of the substrate. The substrate processing apparatus (10) of the embodiment is provided with: a stage (30) that supports a substrate (W) to be an etching target; and a heater (51a1) or a heater (52a) that softens the thermoplastic resin; And the supply nozzle (52) moves relative to the substrate (W) supported by the stage (30), and softens by the heater (51a1) or heater (52a) The thermoplastic resin is supplied to the outer peripheral end (A1) of the substrate (W) supported by the table (30).

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明之實施形態，係有關於基板處理裝置及基板處理方法。The embodiment of the present invention relates to a substrate processing apparatus and a substrate processing method.

基板處理裝置，係被使用於半導體或液晶面板等之製造工程中，基於均一性以及再現性之理由，係廣泛使用有將基板1枚1枚地藉由專用之處理室來進行處理的單片方式之基板處理裝置。例如，在半導體之製造工程中，係存在有層積記憶體元件製造工程，但是，作為在該製造工程中之層積矽晶圓之薄化工程，係存在有將基板之元件層上之Si層以蝕刻液來薄化的蝕刻工程，在此蝕刻工程中，係使用有單片方式之基板處理裝置。 在前述之蝕刻工程中，蝕刻液係被供給至基板之中央附近處，並藉由基板旋轉之離心力而從基板之外周流落。此時，基板之外周面(基板之外周的端面)也會被蝕刻液所侵蝕，並會有基板之直徑變短或基板尺寸變小的情形(基板尺寸之縮小)。若是發生此基板尺寸之縮小，則係成為無法在基板之外周部分處得到所期望之尺寸的元件晶片，而發生有元件晶片之損失(能夠從1枚之基板所得到的所期望之尺寸之元件晶片數量的減少)。又，在後續工程中之由機器人所致之搬送等之中，由於係以基板尺寸作為基準而進行有搬送裝置之設計和設定，因此，若是基板尺寸成為較容許值而更小，則在後續工程中之基板搬送係成為無法進行。Substrate processing equipment is used in the manufacturing process of semiconductors and liquid crystal panels. For reasons of uniformity and reproducibility, it is widely used to process substrates one by one in a dedicated processing chamber. Method of substrate processing equipment. For example, in the manufacturing process of semiconductors, there is a manufacturing process of laminated memory devices. However, as the thinning process of a laminated silicon wafer in this manufacturing process, there is a process of removing Si on the element layer of the substrate. An etching process in which the layer is thinned with an etching solution. In this etching process, a single-chip substrate processing device is used. In the aforementioned etching process, the etching solution is supplied to the vicinity of the center of the substrate, and flows from the outer periphery of the substrate by the centrifugal force of the rotation of the substrate. At this time, the outer periphery of the substrate (the end surface of the outer periphery of the substrate) will also be corroded by the etching solution, and the diameter of the substrate may be shortened or the size of the substrate may be reduced (substrate size reduction). If this reduction in the size of the substrate occurs, it will be impossible to obtain an element chip of the desired size at the outer periphery of the substrate, and loss of the element chip will occur (the element of the desired size that can be obtained from a single substrate Decrease in the number of wafers). In addition, in the transfer by robots in the subsequent process, the design and setting of the transfer device are based on the substrate size. Therefore, if the substrate size becomes smaller than the allowable value, the subsequent The substrate transportation system in the process became impossible.

本發明所欲解決之課題，係在於提供一種能夠對於基板尺寸之縮小作抑制的基板處理裝置及基板處理方法。 本發明之實施形態之基板處理裝置，係具備有：台，係支持成為蝕刻對象之基板；和加熱部，係使熱可塑性樹脂軟化；和供給噴嘴，係相對於藉由前述台而被作支持的前述基板，而進行相對移動，並將藉由前述加熱部而軟化了的前述熱可塑性樹脂，供給至藉由前述台而被作支持的前述基板之外周端部處。 本發明之實施形態之基板處理方法，係具備有：藉由台而支持成為蝕刻對象之基板之工程；和藉由加熱部而使熱可塑性樹脂軟化之工程；和相對於藉由前述台而被作支持的前述基板而使供給噴嘴進行相對移動，並藉由前述供給噴嘴來將藉由前述加熱部而軟化了的前述熱可塑性樹脂供給至藉由前述台而被作支持的前述基板之外周端部處之工程。 若依據本發明之實施形態，則係能夠對於基板尺寸之縮小作抑制。The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method that can suppress the reduction in the size of the substrate. The substrate processing apparatus according to the embodiment of the present invention is provided with: a table which supports the substrate to be etched; and a heating part which softens the thermoplastic resin; and a supply nozzle which is supported by the table The substrate is relatively moved, and the thermoplastic resin softened by the heating part is supplied to the outer peripheral end of the substrate supported by the stage. The substrate processing method of the embodiment of the present invention is provided with: a process of supporting a substrate to be etched by a stage; a process of softening a thermoplastic resin by a heating part; The substrate supported by the substrate is moved relative to the supply nozzle, and the thermoplastic resin softened by the heating section is supplied by the supply nozzle to the outer peripheral end of the substrate supported by the stage Departmental engineering. According to the embodiment of the present invention, the reduction in the size of the substrate can be suppressed.

＜第1實施形態＞ 參考圖1～圖8，針對第1實施形態作說明。 (基本構成) 如同圖1中所示一般，第1實施形態之基板處理裝置10，係具備有處理室20、和台30、和旋轉機構40、和樹脂供給部50、和剝離部60、和回收部70、以及控制部80。 處理室20，係為用以對於具備有被處理面Wa之基板W進行處理的處理盒。此處理室20，例如，係被形成為箱形狀，並收容台30、旋轉機構40之一部分、樹脂供給部50之一部分、剝離部60等。作為基板W，例如，係使用有晶圓或液晶基板。此基板W，係成為蝕刻處理之對象、亦即是成為蝕刻對象。 在前述之處理室20之上面處，係被設置有清淨單元21。此清淨單元21，例如，係具備有HEPA濾網等之濾網和風扇(均未圖示)，並將從基板處理裝置10所被作設置的清淨室的頂面所下吹的下吹流淨化而導入至處理室20內，以在處理室20內產生從上方而流動至下方的氣流。清淨單元21，係被與控制部80作電性連接，其之驅動係被控制部80所控制。 台30，係被定位在處理室20內之中央附近處，並被水平地設置在旋轉機構40上，而成為能夠在水平面內旋轉。此台30，例如，係被稱作旋轉台(spin table)。基板W之被處理面Wa之中心，係被定位於台30之旋轉軸上。台30，例如，係將被載置於其之上面處的基板W作吸附並作保持(吸附保持)。 旋轉機構40，係支持台30，並構成為使該台30在水平面內作旋轉。例如，旋轉機構40，係具備有被與台30之中央作了連結的旋轉軸、和使該旋轉軸旋轉的馬達(均未圖示)。此旋轉機構40，係藉由馬達之驅動而經由旋轉軸來使台30旋轉。旋轉機構40，係被與控制部80作電性連接，其之驅動係被控制部80所控制。 樹脂供給部50，係具備有儲存單元51、和供給噴嘴52、以及噴嘴移動機構53。此樹脂供給部50，係藉由噴嘴移動機構53來使供給噴嘴52移動並定位於台30上之基板W之外周端部A1之上方處，並從儲存單元51來對於供給噴嘴52而送出軟化狀態之熱可塑性樹脂，並且從供給噴嘴52來對於台30上之基板W之外周端部A1供給軟化狀態之熱可塑性樹脂。另外，針對基板W之外周端部A1之詳細內容，係於後再述。 於此，作為熱可塑性樹脂，例如，係使用有PVA(聚乙烯醇)、EVA(乙烯醋酸乙烯酯共聚物)、胺基甲酸乙酯系樹脂。此熱可塑性樹脂，係相對於在蝕刻工程中所使用之蝕刻液而具備有難溶性、亦即是具備有耐性，而作為保護基板W免於受到蝕刻液之影響的保護材而起作用。熱可塑性樹脂，例如，若是其之溫度成為150℃以上則會軟化，若是成為較150℃更低則會硬化。硬化狀態，係亦可為凝膠狀。 儲存單元51，係具備有槽51a、和開閉閥51b、以及幫浦51c。槽51a，係具備有加熱器51a1，並藉由加熱器51a1來將熱可塑性樹脂加熱而儲存軟化狀態之熱可塑性樹脂。加熱器51a1，係作為藉由熱而使熱可塑性樹脂軟化之加熱部而起作用。槽51a，係經由供給管51a2而被與供給噴嘴52作連接。開閉閥51b以及幫浦51c，係被設置在供給管51a2之路徑的途中。電磁閥等之開閉閥51b，係對於在供給管51a2中而流動的軟化狀態之熱可塑性樹脂之流通(供給量和供給時序等)作控制，幫浦51c係身為用以將槽51a內之軟化狀態之熱可塑性樹脂送至供給噴嘴52處的驅動源。開閉閥51b以及幫浦51c、加熱器51a1等之加熱部，係被與控制部80作電性連接，其之驅動係被控制部80所控制。另外，較理想，在供給管51a2之外周壁處，亦係設置有沿著供給管51a2之延伸路徑而延伸的加熱器(未圖示)。於此情況，該加熱器，亦係作為藉由熱而使熱可塑性樹脂軟化之加熱部而起作用，而維持在供給管51a2中流動的熱可塑性樹脂之軟化狀態。 供給噴嘴52，係被形成為能夠藉由噴嘴移動機構53來在台30之上方處沿著台30上之基板W之被處理面Wa而於水平方向上搖動，又，係被形成為能夠在鉛直方向上移動。此供給噴嘴52，係與台30上之基板W之外周端部A1相對向，並將從槽51a而經由供給管51a2所作了供給的軟化狀態之熱可塑性樹脂，朝向台30上之基板W之外周端部A1作供給。作為供給噴嘴52，例如係使用有分配器。又，供給噴嘴52，係具備有加熱器52a。此加熱器52a，係作為藉由熱而使熱可塑性樹脂軟化之加熱部而起作用，而維持在供給噴嘴52中流動的熱可塑性樹脂之軟化狀態。加熱器52a，係被與控制部80作電性連接，其之驅動係被控制部80所控制。 噴嘴移動機構53，係具備有可動臂53a、和臂移動機構53b。可動臂53a，係藉由臂移動機構53b而被水平地作支持，並於其中一端處保持供給噴嘴52。臂移動機構53b，係將可動臂53a處之與供給噴嘴52相反側之一端作保持，並使該可動臂53a沿著台30上之基板W之被處理面Wa而於水平方向上搖動，並使其在鉛直方向上作升降。此臂移動機構53b，係被與控制部80作電性連接，其之驅動係被控制部80所控制。 例如，噴嘴移動機構53，係使供給噴嘴52，在「台30上之基板W之外周端部A1之正上方之供給位置」與「從台30之上方避開而成為能夠進行基板W之搬入和搬出之待機位置」之間作移動。另外，圖1中所示之供給噴嘴52，係位置於供給位置。 於此，如同圖2中所示一般，基板W之外周端部A1，係藉由基板W之上面(被處理面Wa)之外周區域A1a、和基板W之外周面(基板W之外周之端面)A1b、以及基板W之下面之外周區域A1c，而構成之。又，如同圖2以及圖3中所示一般，在基板W之上面處，係存在有在蝕刻處理工程中而成為蝕刻處理之對象的蝕刻對象區域R1。蝕刻對象區域R1，係身為將基板W之上面之外周區域A1a去除後的基板W之上面之區域。此蝕刻對象區域R1以外之區域，係身為在蝕刻處理工程中而並非為蝕刻處理之對象的非蝕刻對象區域。在圖3中，蝕刻對象區域R1係為圓狀之區域，基板W之上面之外周區域A1a、基板W之下面之外周區域A1c(參照圖2)，係分別身為從基板W之外周起朝向內側(基板W之中心側)而具備有數mm(例如4mm以下)的特定寬幅之圓環狀之區域。 例如，供給噴嘴52，係如同圖2中所示一般，位置於台30上之基板W之外周面A1b的正上方處，並對於該外周面A1b之上部而供給軟化狀態之熱可塑性樹脂B1。另外，軟化狀態之熱可塑性樹脂B1，由於係具備有所期望之黏性，因此，被供給至基板W之外周面A1b之上部處的熱可塑性樹脂B1，係以覆蓋基板W之外周面A1b的方式而逐漸朝向下方擴廣。熱可塑性樹脂B1，係若是被從供給噴嘴52而吐出，則會從表層起而逐漸地硬化，附著於基板W上之熱可塑性樹脂B1之溫度係急遽地降低，附著於基板W上的部分之熱可塑性樹脂B1係急速地硬化。台30上之基板W之溫度，係起因於處理室20內之氣流(例如，從上方而流動至下方之氣流)而有所降低。因此，若是從供給噴嘴52所吐出的熱可塑性樹脂B1附著於基板W上，則熱可塑性樹脂B1之溫度係會有急遽地降低的傾向。 於此樹脂之供給時，由於台30係藉由旋轉機構40而作旋轉，因此，台30上之基板W亦係身為旋轉之狀態。因此，從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周面A1b來依序附著。藉由此，如同圖3中所示一般，在基板W之外周面A1b之全面上，熱可塑性樹脂B1係被作塗布，該基板W之外周面A1b之全面係被熱可塑性樹脂B1所覆蓋(樹脂塗布完成)。此完成樹脂塗布之基板W，係藉由具備有機器手等之搬送裝置(未圖示)而被從處理室20搬出，並被搬入至身為與基板處理裝置10相異之個體的蝕刻處理裝置(未圖示)中，並且藉由蝕刻液而被作處理(詳細內容係於後再述)。 另外，在供給噴嘴52為位置於供給位置處的狀態下，供給噴嘴52與台30上之基板W之間的垂直分離距離，係被設定為特定之距離。此特定之距離，係因應於所使用的熱可塑性樹脂B1之種類(在軟化狀態下之黏度)，來與熱可塑性樹脂B1之供給量和台30之旋轉數等一同地而實驗性地預先求取出來。亦即是，特定之距離和熱可塑性樹脂B1之供給量以及台30之旋轉數等，係以會使從供給噴嘴52所吐出的熱可塑性樹脂B1僅將基板W之外周面A1b作覆蓋並硬化的方式，而預先有所設定。 回到圖1，剝離部60，係具備有剝離手61、和手移動機構62。此剝離部60，係藉由手移動機構62來使剝離手61移動並定位於台30上之外周端部A1之上方處，並藉由此剝離手61來從台30上之基板W之外周端部A1而將硬化狀態之熱可塑性樹脂B1剝離。 於此，熱可塑性樹脂B1，由於相較於熱硬化性樹脂等之材料，其之相對於基板W之密著度係為低，因此，係能夠並不使基板W破損地而將密著於基板W上並硬化了的熱可塑性樹脂B1機械性地剝離。另一方面，若是想要將密著於基板W上並硬化了的熱硬化性樹脂機械性地剝離，則基板W係會破損。另外，熱硬化性樹脂，若是一度硬化，則便無法藉由熱來使熱硬化性樹脂軟化，為了將熱硬化性樹脂去除，係需要藉由藥液等來將熱硬化性樹脂溶解。 剝離手61，係被形成為能夠藉由手移動機構62來在台30之上方移動。此剝離手61，係藉由手移動機構62來與台30上之基板W之外周端部A1相對向而下降，並將該外周端部A1之硬化狀態之熱可塑性樹脂B1的一部分作捏抓，並上升且沿著台30上之基板W之被處理面Wa作移動，而將硬化狀態之熱可塑性樹脂B1從台30上之基板W而剝離。作為剝離手61，例如係使用有鉗狀或鑷狀之手。 手移動機構62，係具備有可動臂62a、和臂移動機構62b。可動臂62a，係藉由臂移動機構62b而被作支持，並於其中一端處保持剝離手61。臂移動機構62b，係將可動臂62a處之與剝離手61相反側之一端作保持，並藉由以其之一端作為旋轉中心之於上下方向上的可動臂62a之搖動和在臂移動機構62b自身之水平方向上之搖動，來使剝離手61移動。此臂移動機構62b，係被與控制部80作電性連接，其之驅動係被控制部80所控制。 例如，前述之手移動機構62，係使剝離手61，在「台30上之基板W之外周端部A1之正上方之剝離開始位置(作為其中一例，基板W之外周面A1b之正上方位置近旁)」和「相對於該剝離開始位置而以台30之旋轉軸(基板W之旋轉軸)作為中心而成為點對象的剝離結束位置」和「回收部70之正上方之回收位置」以及「成為能夠進行基板W之搬入和搬出之待機位置」之間作移動。另外，圖1中所示之剝離手61，係位置於待機位置。 回收部70，係以不會對於台30之旋轉動作造成妨礙的方式，而被設置在台30之周圍。此回收部70，係將藉由剝離手61所剝離了的硬化狀態之熱可塑性樹脂B1作回收。例如，回收部70，係被形成為上部開口之箱形狀，並接收從剝離手61而分離並落下的硬化狀態之熱可塑性樹脂B1而作回收。 控制部80，係具備有對於各部作集中性控制之微電腦、和將關連於基板處理之基板處理資訊和各種程式等作記憶之記憶部(均未圖示)。此控制部80，係基於基板處理資訊和各種程式，而進行對於由旋轉機構40所致之台30之旋轉動作、由樹脂供給部50所致之熱可塑性樹脂B1之供給動作、由剝離部60所致之熱可塑性樹脂B1之剝離動作等的控制(亦包含關連於控制之各種處理)。 (基板處理工程) 接著，針對前述之基板處理裝置10所進行之基板處理工程之流程作說明。在此基板處理工程中，控制部80係對於各部之動作進行控制。 如同圖4中所示一般，在步驟S1中，係藉由機器手而將未處理之基板W搬入至處理室20內並載置於台30上，該被作了載置的基板W係藉由台30而被作吸附保持。機器手，在基板W之載置後，係從處理室20而避開。另外，在基板W之搬入時，供給噴嘴52和剝離手61係位置於待機位置。 若是前述之機器手從處理室20而避開，則在步驟S2中，軟化狀態之熱可塑性樹脂B1係被塗布在台30上之基板W之外周端部A1處。首先，台30係藉由旋轉機構40而開始旋轉，又，供給噴嘴52係藉由噴嘴移動機構53而從待機位置來移動至供給位置處。若是供給噴嘴52到達供給位置處，則供給噴嘴52，係位置於台30上之基板W之外周面A1b的正上方處(參照圖2)，若是台30之旋轉數成為特定之旋轉數(例如10rpm)，則係朝向基板W之外周面A1b之上部而吐出軟化狀態之熱可塑性樹脂B1。從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周面A1b來依序附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則在基板W之外周面A1b之全面上，熱可塑性樹脂B1係被作塗布(參照圖3)，台30上之基板W之外周面A1b之全面係被熱可塑性樹脂B1所覆蓋。被塗布在外周面A1b上的熱可塑性樹脂B1之厚度，例如係為0.5～3mm。若是此樹脂塗布結束而吐出被停止，則台30係停止旋轉，供給噴嘴52係從塗布位置而移動至待機位置處。另外，被塗布在外周面A1b上的熱可塑性樹脂B1，係起因於溫度之降低而成為硬化狀態。 若是前述之供給噴嘴52回到待機位置處，則在步驟S3中，完成樹脂塗布之基板W，係從台30上藉由前述之機器手(未圖示)而被搬出至處理室20外，並被搬入至蝕刻處理裝置(未圖示)中。之後，藉由蝕刻處理裝置，基板W之被處理面Wa係藉由蝕刻液而被作處理。在蝕刻工程中，蝕刻液係被供給至例如以50rpm而進行旋轉的基板W之被處理面Wa之中央附近處，被作了供給的蝕刻液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。藉由此，在基板W之被處理面Wa上係被形成有蝕刻液之液膜，基板W之被處理面Wa係藉由蝕刻液而被作處理。此時，硬化狀態之熱可塑性樹脂B1，係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用。蝕刻處理後之基板W，係在蝕刻處理裝置內，依序被進行使用有洗淨液之洗淨處理、由使基板W進行高速旋轉一事所致的乾燥處理。 在步驟S4中，藉由前述之機器手，完成蝕刻處理之基板W係再度被搬入至處理室20內並載置於台30上，該被作了載置的基板W係藉由台30而被作吸附保持。機器手，在基板W之載置後，係從處理室20而避開。另外，在基板W之搬入時，供給噴嘴52和剝離手61係位置於待機位置。 若是前述之機器手從處理室20而避開，則在步驟S5中，硬化狀態之熱可塑性樹脂B1係被從台30上之基板W之外周端部A1而去除。首先，剝離手61係藉由手移動機構62而從待機位置來移動至剝離開始位置。若是剝離手61到達剝離開始位置，則係位置於台30上之基板W之外周面A1b的正上方處並下降，並且將附著在外周面A1b上之硬化狀態之熱可塑性樹脂B1的一部分作捏抓。另外，若是硬化狀態之熱可塑性樹脂B1為具備有彈性，則由剝離手61所致之捏抓係能夠極為容易地進行。剝離手61，係在將硬化狀態之熱可塑性樹脂B1的一部分作了捏抓的狀態下而上升，並從剝離開始位置而朝向剝離結束位置移動，而將硬化狀態之熱可塑性樹脂B1從基板W之外周面A1b剝下。藉由此，硬化狀態之熱可塑性樹脂B1係被從基板W而去除。若是此樹脂去除結束，則剝離手61係從剝離結束位置而移動至回收位置處，若是到達回收位置，則係使硬化狀態之熱可塑性樹脂B1分離並朝向回收部70落下。回收部70，係接收落下的硬化狀態之熱可塑性樹脂B1並作收容。剝離手61，若是在回收位置處而使硬化狀態之熱可塑性樹脂B1落下，則係從回收位置而移動至待機位置處。 若是前述之剝離手61回到待機位置處，則在步驟S6中，完成樹脂剝離之基板W，係從台30上藉由前述之機器手(未圖示)而被搬出至處理室20外，並為了進行下一工程而被搬送裝置進行搬送。 在此種基板處理工程中，軟化狀態之熱可塑性樹脂B1係被塗布在台30上之基板W之身為外周端部A1之一部分的外周面A1b上，該外周面A1b之全面係被硬化狀態之熱可塑性樹脂B1所覆蓋。藉由此，在身為後續工程之蝕刻工程中，由於硬化狀態之熱可塑性樹脂B1係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用，因此，基板W之外周面A1b被蝕刻液所侵蝕的情形係被作抑制，而能夠對於基板W之直徑變小、亦即是基板尺寸縮小的情形作抑制。其結果，由於係成為就算是在基板W之外周部分處也能夠得到所期望之尺寸的元件晶片，因此係能夠對於元件晶片之損失的發生作抑制。又，係成為能夠進行像是後續工程中之由機器人所致之搬送等的後續工程中之基板搬送，而能夠使良率提升。 又，硬化狀態之熱可塑性樹脂B1係藉由剝離手61而被剝離並被從基板W而去除。藉由此，相較於以藥液來將硬化狀態之熱可塑性樹脂B1溶解並從基板W而去除的情況，係能夠以短時間來將硬化狀態之熱可塑性樹脂B1從基板W而去除，並且也不需要使用藥液，因此係能夠對起因於藥液之廢棄所致的對環境所造成的負擔有所抑制。另外，熱可塑性樹脂B1，相較於熱硬化性樹脂，其之相對於基板W之密著度係為低。因此，藉由並非使用熱硬化性樹脂而是使用熱可塑性樹脂B1，係成為易於將基板W上之硬化狀態之熱可塑性樹脂B1從基板W而剝離，而能夠並不對於基板W造成損傷地而將硬化狀態之熱可塑性樹脂B1從基板W去除。在使用有熱硬化性樹脂的情況時，為了並不對於基板W造成損傷地而將硬化狀態之熱硬化性樹脂從基板W去除，係成為需要設置進行由藥液等所致之去除的裝置，並成為導致裝置之複雜化和成本的提升。 如同以上所作了說明一般，若依據第1實施形態，則藉由將軟化狀態之熱可塑性樹脂B1供給至台30上之基板W之外周端部A1處、例如供給至基板W之外周面A1b處，該外周面A1b係被硬化狀態之熱可塑性樹脂B1所覆蓋。藉由此，在蝕刻工程中，基板W之外周面A1b係被硬化狀態之熱可塑性樹脂B1所保護，由蝕刻液所致之侵蝕的情形係被作抑制，因此係能夠對於基板尺寸的縮小作抑制。 (樹脂塗布之其他例) 將前述之由供給噴嘴52所致之樹脂塗布之例，作為第1例，並作為樹脂塗布之其他例，而針對第2例、第3例以及第4例作說明。 作為第2例，如同圖5中所示一般，供給噴嘴52，係位置於台30上之基板W之外周區域A1a的正上方、例如在外周區域A1a處而位置在接近基板W之外側之位置的正上方處，並對於該外周區域A1a而供給軟化狀態之熱可塑性樹脂B1。在第2例中，相較於第1例，軟化狀態之熱可塑性樹脂B1之供給量係為多。被供給至基板W之外周區域A1a處的熱可塑性樹脂B1，係以覆蓋該外周區域A1a、並且進而覆蓋與外周區域A1a相連之外周面A1b的方式，而逐漸擴廣。在此樹脂供給時，由於台30上之基板W係與台30一同旋轉，因此，從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周區域A1a以及外周面A1b來依序附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則如同圖6中所示一般，在基板W之外周區域A1a之全體以及外周面A1b之全面上，熱可塑性樹脂B1係被作塗布，該基板W之外周區域A1a之全面以及外周面A1b之全面係被熱可塑性樹脂B1所覆蓋。 作為第3例，如同圖7中所示一般，供給噴嘴52，係位置於台30上之基板W之外周區域A1a的正上方、例如在外周區域A1a處而位置在較第2例之位置而更加接近基板W之外側之位置的正上方處，並對於該外周區域A1a而供給軟化狀態之熱可塑性樹脂B1。在第3例中，相較於第2例，軟化狀態之熱可塑性樹脂B1之供給量係為多。被供給至基板W之外周區域A1a處的熱可塑性樹脂B1，係以覆蓋基板W之外周區域A1a、並且進而覆蓋與外周區域A1a相連之外周面A1b、與外周面A1b相連之外周區域A1c的方式，而逐漸擴廣。在此樹脂供給時，由於台30上之基板W係與台30一同旋轉，因此，從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周區域A1a、外周面A1b以及外周區域A1c來依序附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則在基板W之外周區域A1a之全面、外周面A1b之全面以及外周區域A1c之一部分上，熱可塑性樹脂B1係被作塗布，該基板W之外周區域A1a之全面、外周面A1b之全面以及外周區域A1c之一部分係被熱可塑性樹脂B1所覆蓋。 作為第4例，如同圖8中所示一般，供給噴嘴52，係位置於台30上之基板W之外周區域A1a的正上方、例如在外周區域A1a處而位置在較第2例而更加接近基板W之內側之位置的正上方處，並對於該外周區域A1a而供給軟化狀態之熱可塑性樹脂B1。在第4例中，相較於第2例，軟化狀態之熱可塑性樹脂B1之供給量係為少。被供給至基板W之外周區域A1a處的熱可塑性樹脂B1，係以覆蓋基板W之外周區域A1a的方式，而逐漸擴廣。在此樹脂供給時，由於台30上之基板W係與台30一同旋轉，因此，從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周區域A1a來依序附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則在基板W之外周區域A1a之全面上，熱可塑性樹脂B1係被作塗布，該基板W之外周區域A1a之全面係被熱可塑性樹脂B1所覆蓋。 在前述之第2～第4例中，亦係與前述之第1例相同的，能夠對於基板尺寸之縮小作抑制。另外，在熱可塑性樹脂B1之供給時的供給噴嘴52與台30上之基板W之間之垂直分離距離、供給位置、供給量、台30之旋轉數等，係實驗性地預先求取出來，關於此點，係與第1例相同。在第4例中，基板W之外周面A1b之全面係並未被熱可塑性樹脂B1所覆蓋，但是基板W之外周區域A1a之全面係被熱可塑性樹脂B1所覆蓋(參照圖8)。在蝕刻工程中，被供給至進行旋轉的基板W之被處理面Wa之中央附近處的蝕刻液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。此作了擴廣的蝕刻液，係起因於由基板W之旋轉所致的離心力而朝向基板W之外飛散，但是，此時，藉由附著在基板W之外周區域A1a上的硬化狀態之熱可塑性樹脂B1，蝕刻液之飛散方向係相對於水平面而偏向至上方。因此，蝕刻液流入至基板W之外周面A1b處的情形係被作抑制。藉由此，與前述之第1例相同的，係能夠對於基板尺寸之縮小作抑制。第4例，較理想，係使用在當基板W之外周面A1b或下面為藉由SiN或SiO2 而作了被膜時的情況中。但是，較理想，為了確實地保護基板W之外周面A1b免於受到蝕刻液之侵蝕，係藉由熱可塑性樹脂B1來將外周面A1b之全面完全地作覆蓋。 另外，控制部80，在前述之第1～第4例之樹脂塗布之方法中，係以對於供給噴嘴52之對台30上之基板W供給熱可塑性樹脂B1之供給位置、亦即是對於熱可塑性樹脂B1所被作供給的基板W上之位置作改變的方式，來對於噴嘴移動機構53進行控制。例如，控制部80，在使供給噴嘴52對於台30上之基板W之外周面A1b供給熱可塑性樹脂B1的情況時(第1例)、和在對於台30上之基板W之上面的外周區域A1a以及外周面A1b塗布熱可塑性樹脂B1的情況時(第2例)，係以改變對於台30上之基板W而供給熱可塑性樹脂B1之供給位置的方式，來對於噴嘴移動機構53進行控制。 ＜第2實施形態＞ 參考圖9～圖14，針對第2實施形態作說明。另外，在第2實施形態中，係針對與第1實施形態間的相異點(台、杯以及處理液供給部)作說明，並省略其他之說明。 如同圖9中所示一般，第2實施形態之基板處理裝置10，係除了第1實施形態之各部20～80之外，更進而具備有杯85和處理液供給部90。另外，第2實施形態之台30，係身為在基板保持機構上為與第1實施形態相異之台。 台30，係並非如同第1實施形態一般地將基板W作吸附並作保持，而是具備有複數之保持構件31，並藉由該些之保持構件31來在台30之上面側而將基板W夾入，並保持於水平狀態。例如，保持構件31之個數係為6個。 各保持構件31，係如同圖10中所示一般，分別具備有旋轉構件31a和銷31b。旋轉構件31a，係藉由台30而被可旋轉地作支持，並藉由線圈彈簧等之推壓構件31c，而在鉛直方向上被朝向下方作推壓。銷31b，係在旋轉構件31a之上面處，相對於旋轉構件31a之旋轉中心而偏心地作設置。6個的旋轉構件31a，係以藉由旋轉升降機構32而成為能夠進行旋轉以及升降的方式，而被形成。例如，若是在平面觀察下而各旋轉構件31a朝向順時針方向旋轉，則各銷31b係進行偏心旋轉，並對於基板W之外周面A1b而從水平方向來分別作抵接，並將基板W夾入而作保持。又，若是在平面觀察下而各旋轉構件31a朝向逆時針方向旋轉，則由各銷31b所致之基板W之保持係被解放。另外，如同圖12中所示一般，係對應於各保持構件31地，而在以台30之中心作為中心的各60度間隔處，使切缺部30a作對位，並分別以不會對於保持構件31之把持動作和升降動作造成阻礙的方式而被形成於台30處。 旋轉升降機構32，係如同圖10中所示一般，具備有旋轉機構32a和升降機構32b。旋轉機構32a，係相對於台30而使6個的旋轉構件31a同步地進行旋轉。升降機構32b，係使6個的旋轉構件31a同步地而在鉛直方向上作升降。例如，作為旋轉機構32a，係使用有齒輪，作為升降機構32b，係使用有藉由空氣汽缸32b1而被作升降的圓環狀之板32b2。升降機構32b，係將各保持構件31一同地上推並使其上升。若是此上推狀態被解除，則各保持構件31係藉由由各別之推壓構件31c所致之推壓力而被下壓並下降，並且回到原本的位置處。旋轉升降機構32，係被與控制部80作電性連接，其之驅動係被控制部80所控制。 回到圖9，例如，旋轉升降機構32，係使各保持構件31，在「將台30上之基板W定位於杯85內並使從該基板W之被處理面Wa所飛散的處理液被杯85內之內周面所接收之處理位置」與「將台30上之基板W定位於杯85外而成為能夠進行基板W之搬入和搬出之搬入搬出位置」之間作移動。另外，圖9中所示之各保持構件31，係位置於處理位置。 杯85，係收容台30，並以接收從藉由該台30所作了保持的基板W之被處理面Wa所飛散之處理液的方式而被形成。例如，杯85係被形成為上部開口之圓筒狀。此杯85之周壁的上部，係朝向內側而傾斜，並以使台30上之基板W之被處理面Wa露出的方式而開口。杯85，係以內周面來接收起因於台30之旋轉而從台30上之基板W之被處理面Wa所飛散的處理液。作了飛散的處理液，係與杯85之內周面相碰撞，並沿著杯85之內周面而流落至杯85之下方，並且從位於杯85之底面處的排出口(未圖示)而被排出。 處理液供給部90，係具備有複數之供給噴嘴91、和噴嘴移動機構92。此處理液供給部90，係藉由噴嘴移動機構92來使各供給噴嘴91移動並定位於台30之中央附近之上方處，並且從該些之供給噴嘴91來分別對於台30上之基板W之被處理面Wa的中央附近供給處理液。 各供給噴嘴91，係被形成為能夠藉由噴嘴移動機構92來在台30之上方處沿著台30上之基板W之被處理面Wa而於水平方向上搖動。此些之供給噴嘴91，係位置於台30上之基板W之被處理面Wa的中央附近之上方處，並朝向該被處理面Wa而分別供給處理液(例如，蝕刻液或洗淨液、超純水)。另外，在各供給噴嘴91處，係分別從處理室20外之槽(未圖示)而被供給有處理液。例如，在各供給噴嘴91中之1個的供給噴嘴91處，係被供給有蝕刻液，在另外1個的供給噴嘴91處，係被供給有洗淨液，在又另外1個的供給噴嘴91處，係被供給有超純水。 噴嘴移動機構92，係具備有可動臂92a、和臂移動機構92b。可動臂92a，係藉由臂移動機構92b而被水平地作支持，並於其中一端處保持各供給噴嘴91。臂移動機構92b，係將可動臂92a處之與各供給噴嘴91相反側之一端作保持，並使該可動臂92a沿著台30上之基板W之被處理面Wa而於水平方向上搖動。此臂移動機構92b，係被與控制部80作電性連接，其之驅動係被控制部80所控制。 例如，噴嘴移動機構92，係使各供給噴嘴91，在「台30上之基板W之被處理面Wa之中央附近的正上方之供給位置」與「從台30之上方避開而成為能夠進行基板W之搬入和搬出之待機位置」之間作移動。另外，圖9中所示之各供給噴嘴91，係位置於供給位置。 於此，如同圖11以及圖12中所示一般，台30，係以將藉由位置於處理位置處之各保持構件31而被作了保持的基板W、亦即是將位置於處理位置處之各保持構件31上之基板W之外周面A1b作包圍的方式，而被形成。如同圖11中所示一般，台30之上面之高度位置、和位置於處理位置處之各保持構件31上之基板W之上面之高度位置，係為略相同。另外，在圖12中，各保持構件31，係在以台30之旋轉軸作為中心之同一圓周上，而各間隔60度地被作配置。 供給噴嘴52，係如同圖11中所示一般，位置於各保持構件31上之基板W與台30之上面之間的間隙之正上方處，並朝向該間隙(例如，0.1mm～0.5mm程度)而吐出軟化狀態之熱可塑性樹脂B1，而以將各保持構件31上之基板W與台30之上面之間之間隙、各保持構件31上之基板W之外周區域A1a之一部分以及與該外周區域A1a相鄰之台30之上面之一部分作覆蓋的方式，來供給軟化狀態之熱可塑性樹脂B1。另外，軟化狀態之熱可塑性樹脂B1，由於係具備有所期望之黏性，因此，被朝向前述之間隙而作了吐出的熱可塑性樹脂B1，係以覆蓋該間隙的方式而逐漸擴廣。熱可塑性樹脂B1，係若是被從供給噴嘴52而吐出，則會從表層起而逐漸地硬化，若是附著於台30和各保持構件31、基板W上，則熱可塑性樹脂B1之溫度係急遽地降低，附著於該些處的部分之熱可塑性樹脂B1係急速地硬化。 於此樹脂之供給時，由於台30係藉由旋轉機構40而作旋轉，因此，台30上之基板W亦係身為旋轉之狀態。此時，保持構件31由於係被台30所支持，因此係並不會產生被保持於保持構件31處之基板W與台30之間的相對移動。故而，從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉，而以將各保持構件31上之基板W與台30之上面之間之間隙作覆蓋的方式，來依序對於各保持構件31上之基板W之外周區域A1a之一部分以及與該外周區域A1a相鄰之台30之上面之一部分作附著。藉由此，如同圖12中所示一般，熱可塑性樹脂B1係被塗布於特定寬幅之環狀區域處，特定寬幅之環狀區域係被熱可塑性樹脂B1所覆蓋(樹脂塗布完成)。此完成樹脂塗布之基板W，係在處理室20內藉由蝕刻液而被作處理(詳細內容係於後再述)。 (基板處理工程) 接著，針對前述之基板處理裝置10所進行之基板處理工程之流程作說明。在此基板處理工程中，控制部80係對於各部之動作進行控制。 如同圖13中所示一般，在步驟S11中，係藉由機器手而將未處理之基板W搬入至處理室20內並供給至台30處，該被作了供給的基板W係藉由台30之各保持構件31而被夾入並被作保持。機器手，在基板W之供給後，係從處理室20而避開。另外，在基板W之搬入時，供給噴嘴52和剝離手61、各供給噴嘴91係位置於待機位置。 若是前述之機器手從處理室20而避開，則在步驟S12中，軟化狀態之熱可塑性樹脂B1係被塗布在前述之特定寬幅之環狀區域處。首先，台30係藉由旋轉機構40而開始旋轉，又，供給噴嘴52係藉由噴嘴移動機構53而從待機位置來移動至供給位置處。若是供給噴嘴52到達供給位置處，則供給噴嘴52，係位置於各保持構件31上之基板W與台30之上面之間之間隙的正上方處(參照圖11)，若是台30之旋轉數成為特定之旋轉數，則係朝向前述之間隙而吐出軟化狀態之熱可塑性樹脂B1。從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉，而以將各保持構件31上之基板W與台30之上面之間之間隙作覆蓋的方式，來依序對於各保持構件31上之基板W之外周區域A1a之一部分以及與該外周區域A1a相鄰之台30之上面之一部分作附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則熱可塑性樹脂B1係被塗布於特定寬幅之環狀區域處(參照圖12)，前述之特定寬幅之環狀區域係被熱可塑性樹脂B1所覆蓋。若是此樹脂塗布結束而吐出被停止，則供給噴嘴52係從塗布位置而移動至待機位置處。另外，被作了塗布的熱可塑性樹脂B1，係起因於溫度之降低而成為硬化狀態。 若是前述之供給噴嘴52回到待機位置處，則在步驟S13中，一連串之蝕刻處理係被實行。首先，各供給噴嘴91係藉由噴嘴移動機構92而從待機位置來移動至供給位置處。若是各供給噴嘴91到達供給位置處，則係對於正在旋轉之基板W之被處理面Wa的中央附近而分別依序供給處理液。處理液之供給順序，係成為蝕刻液、洗淨液以及超純水之順序。被供給至基板W之被處理面Wa之中央附近處的處理液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。藉由此，在基板W之被處理面Wa上係被形成有處理液之液膜，基板W之被處理面Wa係藉由處理液而被作處理。最初，蝕刻液之供給係被開始，若是從蝕刻液之供給開始起而經過特定之時間，則洗淨液之供給係被開始，蝕刻液之供給係被停止。之後，若是從洗淨液之供給開始起而經過特定之時間，則超純水之供給係被開始，洗淨液之供給係被停止。若是從超純水之供給開始起而經過特定之時間，則超純水之供給係被停止，各供給噴嘴91係從塗布位置而移動至待機位置處。 若是前述之超純水之供給被停止，則在步驟S14中，乾燥處理係被實行。亦即是，若是超純水之供給被停止，則台30之旋轉數係被提升為特定之旋轉數(液之甩開乾燥)。此時之旋轉數，係較步驟S12或S13之旋轉數而更大。若是從超純水之供給停止起而經過特定之時間，則台30係將旋轉停止。 若是前述之各供給噴嘴91到達待機位置處，而台30之旋轉停止，則在步驟S15中，硬化狀態之熱可塑性樹脂B1係被從前述之特定寬幅之環狀區域而去除。首先，剝離手61係藉由手移動機構62而從待機位置來移動至剝離開始位置，又，各保持構件31係藉由旋轉升降機構32而上升至較台30之上面而更上方。藉由此上升，如同圖14中所示一般，硬化狀態之熱可塑性樹脂B1係被從台30之上面之一部分而剝下。若是剝離手61到達剝離開始位置，則係位置於台30上之基板W之外周面A1b的近旁之正上方處，之後係下降，並且將附著在各保持構件31之上面或各保持構件31上之基板W之外周區域A1a之一部分處的硬化狀態之熱可塑性樹脂B1的一部分作捏抓。之後，剝離手61，係在將硬化狀態之熱可塑性樹脂B1的一部分作了捏抓的狀態下而上升，並從剝離開始位置而朝向剝離結束位置移動，而將硬化狀態之熱可塑性樹脂B1從基板W剝下。藉由此，硬化狀態之熱可塑性樹脂B1係被從基板W而去除。若是此樹脂去除結束，則剝離手61係從剝離結束位置而移動至回收位置處，若是到達回收位置，則係使硬化狀態之熱可塑性樹脂B1分離並朝向回收部70落下。回收部70，係接收落下的硬化狀態之熱可塑性樹脂B1並作收容。剝離手61，若是在回收位置處而使硬化狀態之熱可塑性樹脂B1落下，則係從回收位置而移動至待機位置處。 若是前述之剝離手61回到待機位置處，則在步驟S16中，完成樹脂剝離之基板W，係從各保持構件31上藉由前述之機器手(未圖示)而被搬出至處理室20外，並為了進行下一工程而被搬送裝置進行搬送。 在此種基板處理工程中，軟化狀態之熱可塑性樹脂B1係以將各保持構件31上之基板W之上面與台30之上面之間之間隙作覆蓋的方式，而被塗布在特定寬幅之環狀區域處，該特定寬幅之環狀區域係被硬化狀態之熱可塑性樹脂B1所覆蓋。被供給至基板W之上面處的蝕刻液，係起因於離心力，而從基板W之上面經由熱可塑性樹脂B1之上面來轉移至台30之上面處，並被從台30之外周而排出。藉由此，在身為後續工程之蝕刻工程中，硬化狀態之熱可塑性樹脂B1係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用。因此，基板W之外周面A1b被蝕刻液所侵蝕的情形係被作抑制，而能夠對於基板尺寸的縮小作抑制。其結果，由於係成為就算是在基板W之外周部分處也能夠得到所期望之尺寸的元件晶片，因此係能夠對於元件晶片之損失的發生作抑制。又，係成為能夠進行像是後續工程中之由機器人所致之搬送等的後續工程中之基板搬送，而能夠使良率提升。 又，在將硬化狀態之熱可塑性樹脂B1從基板W而去除的工程中，於藉由剝離手61來將基板W上之熱可塑性樹脂B1之一部分作捏抓之前，係藉由旋轉升降機構32來使將基板W作保持之各保持構件31上升，並從台30之上面的一部分來使硬化狀態之熱可塑性樹脂B1被剝下。藉由此，剝離手61由於係成為易於將硬化狀態之熱可塑性樹脂B1的一部分作捏抓，因此，係能夠使將硬化狀態之熱可塑性樹脂B1從基板W而去除的作業變得容易化。 如同以上所作了說明一般，若依據第2實施形態，則係能夠得到與第1實施形態相同之效果。又，藉由以將各保持構件31上之基板W之上面與台30之上面之間之間隙作覆蓋的方式而在特定寬幅之環狀區域處塗布軟化狀態之熱可塑性樹脂B1，相較於在台30上之基板W之外周面A1b處直接塗布軟化狀態之熱可塑性樹脂B1的情況，係能夠使關連於樹脂塗布之各種設定和裝置調整變得容易化。此係因為，在第1實施形態中，係身為藉由使被供給至基板W之外周面A1b之上部處的熱可塑性樹脂B1以覆蓋基板W之外周面A1b的方式而逐漸朝向下方擴廣，來在外周面A1b處塗布熱可塑性樹脂B1者。而，相對於此，在第2實施形態中，則係僅需要在台30之上面、基板W之上面、兩者間之間隙的各者處，而使熱可塑性樹脂B1被作塗布即可之故。當在基板W之外周面A1b處將軟化狀態之熱可塑性樹脂B1直接作塗布的情況時，依存於所使用之熱可塑性樹脂B1之黏度等，係會有難以進行關連於樹脂塗布之各種設定和裝置調整的情形。 ＜第3實施形態＞ 參考圖15～圖17，針對第3實施形態作說明。另外，在第3實施形態中，係針對與第2實施形態間的相異點(台以及導引構件)作說明，並省略其他之說明。 如同圖15中所示一般，第3實施形態之基板處理裝置10，係除了第2實施形態之各部20～90之外，更進而具備有導引構件100。另外，第3實施形態之台30，係身為在一部分處為與第2實施形態相異之台。 台30，係在旋轉中心部處具備有中空部30b。在此中空部30b處，係被固定配置有複數之供給噴嘴33。故而，各供給噴嘴33，係並不會與台30一同旋轉。例如，在被與台30作連結的成為旋轉軸之筒狀之支柱內，係構成中空部30b。此些之供給噴嘴33，係分別朝向台30上之基板W之下面的中央附近而供給處理液(例如，超純水)。藉由此，係能夠藉由超純水來將基板W之下面洗淨。 導引構件100，係在藉由位置於處理位置處之各保持構件31而使基板W被作了保持的狀態下，以將該基板W之外周面A1b作包圍的方式，而例如被形成為圓環狀，並藉由設置在台30之上面處的複數之支柱101，來以從台30之上面而分離並位置在台30之上面之上方處的方式，而被作設置。各支柱101，係在以導引構件100之圓環之中心作為中心的同一圓周上，而各間隔60度地被作配置。另外，導引構件100之上面之高度位置、和藉由位置於處理位置處之各保持構件31而被作了保持的基板W之上面之高度位置，係為略相同。 在前述之導引構件100處，係如同圖16中所示一般，對應於各保持構件31地而被形成有複數之切缺部102。亦即是，各切缺部102，係對應於各保持構件31地，而以導引構件100之圓環之中心作為中心來各間隔60度地被作配置，並分別以不會對於保持構件31之把持動作和升降動作造成阻礙的方式而被形成。 供給噴嘴52，係如同圖17中所示一般，位置於各保持構件31上之基板W與導引構件100之上面之間的間隙之正上方處，並朝向該間隙而吐出軟化狀態之熱可塑性樹脂B1，而以將各保持構件31上之基板W與導引構件100之上面之間之間隙、各保持構件31上之基板W之外周區域A1a之一部分以及與該外周區域A1a相鄰之導引構件100之上面之一部分作覆蓋的方式，來供給軟化狀態之熱可塑性樹脂B1。另外，軟化狀態之熱可塑性樹脂B1，由於係具備有所期望之黏性，因此，被朝向前述之間隙而作了吐出的熱可塑性樹脂B1，係以覆蓋該間隙的方式而逐漸擴廣。熱可塑性樹脂B1，係若是被從供給噴嘴52而吐出，則會從表層起而逐漸地硬化，若是附著於導引構件100和各保持構件31、基板W上，則熱可塑性樹脂B1之溫度係急遽地降低，附著於該些處的部分之熱可塑性樹脂B1係急速地硬化。 於此樹脂之供給時，由於台30係藉由旋轉機構40而作旋轉，因此，台30上之基板W亦係旋轉，在基板W與導引構件100之間係身為不會產生相對移動之狀態。故而，從供給噴嘴52所吐出的熱可塑性樹脂B1，係以將各保持構件31上之基板W與導引構件100之上面之間之間隙作覆蓋的方式，來依序對於各保持構件31上之基板W之外周區域A1a之一部分以及與該外周區域A1a相鄰之導引構件100之上面之一部分作附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則熱可塑性樹脂B1係被塗布於特定寬幅之環狀區域處，該特定寬幅之環狀區域係被熱可塑性樹脂B1所覆蓋(完成樹脂塗布)。此完成樹脂塗布之基板W，係在處理室20內藉由蝕刻液而被作處理。 在蝕刻工程中，係如同第2實施形態一般地而被供給有處理液(蝕刻液、洗淨液以及超純水)，但是，在此處理液之供給中，係對於各保持構件31上之基板W之下面之全體，而從各供給噴嘴33來供給有超純水。藉由此，就算是在蝕刻處理中，也能夠將基板W之下面維持為清淨。此時，由於係存在有導引構件100，因此，係成為能夠使被供給至各保持構件31上之基板W之下面處並沿著該基板W之下面而朝向基板W之外周流動的超純水，在導引構件100與台30之上面之間的空間中流動並排出至台30外。 如同以上所作了說明一般，若依據第3實施形態，則係能夠得到與第2實施形態相同之效果。又，藉由設置導引構件100，係能夠將各保持構件31上之基板W與導引構件100之上面之間之間隙和各保持構件31上之基板W之外周區域A1a之一部分以及與該外周區域A1a相鄰之導引構件100之上面之一部分，藉由熱可塑性樹脂B1來作覆蓋。藉由此，係能夠保護基板W之外周面A1b免於受到蝕刻液之影響，並且亦能夠將被供給至基板W之下面處之超純水排出至台30外。藉由此，由於係能夠對於基板W之下面供給超純水，因此係能夠將基板W之下面維持為清淨。 ＜第4實施形態＞ 參考圖18～圖20，針對第4實施形態作說明。另外，在第4實施形態中，係針對與第1實施形態間的相異點(剝離手61以及回收部70)作說明，並省略其他之說明。 如同圖18中所示一般，第4實施形態之剝離手61，係身為前端為尖銳之針狀的銷。此剝離手61，係藉由熱傳導性為高之材料而被形成，並內藏有鎳鉻合金線等之加熱體62c。此加熱體62c，係加熱剝離手61。可動臂62a，係被形成為可藉由旋轉機構62d而在中途作彎折。旋轉機構62d，係具備有旋轉軸和馬達(均未圖示)，並作為實現自由之彎折的關節而起作用。剝離手61，係經由旋轉機構62e而被與可動臂62a作連結。旋轉機構62e，係具備有旋轉軸和馬達(均未圖示)，並作為以旋轉軸作為旋轉中心來使剝離手61作旋轉的旋轉驅動部而起作用。加熱體62c和各旋轉機構62d、62e，係分別被與控制部80作電性連接，該些之驅動係被控制部80所控制。 如同圖19中所示一般，第4實施形態之回收部70，係具備有本體71、和去除部72。本體71之一部分，係被設置在處理室20內，其他之部分，係被設置在處理室20外。在本體71處之處理室20內之空間，係身為用以將硬化狀態之熱可塑性樹脂B1從剝離手61而去除的空間，處理室20外之空間，係身為用以收容硬化狀態之熱可塑性樹脂B1的空間。本體71，係於上面具備有開口部71a，此開口部71a，係被形成為能夠使剝離手61在保持有硬化狀態之熱可塑性樹脂B1的狀態下而進入至本體71內的大小。去除部72，係具備有可開閉之一對的閘門構件(去除構件之其中一例)72a。此些之閘門構件72a，係作為將本體71之上端之開口部71a作閉塞的蓋體而相互對向地被作設置，並被形成為能夠藉由移動機構72b來朝向相互接近之方向以及相互分離之方向作移動。移動機構72b，係藉由連動構件和馬達(均未圖示)等而被構成，馬達係被與控制部80作電性連接，其之驅動係被控制部80所控制。 一對之閘門構件72a，係如同圖20中所示一般，相互移動並成為完全作了關閉的狀態，但是，係以就算是在完全作了關閉的狀態下亦具備有能夠僅使針狀之剝離手61通過之貫通孔H1的方式而被形成。亦即是，在一對之閘門構件72a完全地作了關閉的狀態下，當保持有硬化狀態之熱可塑性樹脂B1的剝離手61通過貫通孔H1時，藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1係成為與一對之閘門構件72a作抵接。 在樹脂剝離工程中，剝離手61係藉由加熱體62c而被加熱，被作了加熱的剝離手61係從剝離開始位置起而一直下降至接觸位置處。剝離手61之移動，係與第1實施形態相同的，藉由手移動機構62而被進行(以下亦同)。剝離手61，係維持於躺下了的狀態(略水平之狀態)，而與基板W上之硬化狀態之熱可塑性樹脂B1的一部分作接觸，並藉由由加熱體62c所致之熱，來使基板W上之硬化狀態之熱可塑性樹脂B1的一部分軟化(熔融)。之後，在使剝離手61與熱可塑性樹脂B1的一部分作了接觸的狀態下，對於剝離手61之由加熱體62c所致之熱係被停止，起因於熱而軟化了的熱可塑性樹脂B1之一部分係起因於放置冷卻而再度硬化。藉由此，剝離手61係被與熱可塑性樹脂B1作接著，剝離手61係將熱可塑性樹脂B1確實地作保持。另外，於此，熱可塑性樹脂B1雖然並未直接被加熱，但是，係亦可構成為將剝離手61所接觸的區域之熱可塑性樹脂B1預先藉由點狀鹵素燈等之加熱部(未圖示)來作加熱。於此情況，係能夠使對於硬化狀態之熱可塑性樹脂B1的剝離手61之接著更加容易化。 接著，剝離手61，係在將硬化狀態之熱可塑性樹脂B1的一部分作了保持的狀態下，從接觸位置而一直上升至剝離開始位置處，而將硬化狀態之熱可塑性樹脂B1的一部分從基板W剝下。位置在剝離開始位置處之剝離手61，係一面藉由旋轉機構62d來以旋轉軸作為旋轉中心而進行旋轉，一面從剝離開始位置而朝向剝離結束位置來沿著基板W之表面移動，而將硬化狀態之熱可塑性樹脂B1作卷取並從基板W之外周面A1b剝下(參照圖18)。藉由此，硬化狀態之熱可塑性樹脂B1係被從基板W而剝離。 若依據此樹脂剝離工程，則硬化狀態之熱可塑性樹脂B1係藉由剝離手61而被作卷取並被從基板W而去除。藉由此，相較於並不實行由剝離手61所致之卷取而使剝離手61移動並進行熱可塑性樹脂B1之去除的情況，係成為能夠使身為在將熱可塑性樹脂B1剝離時的移動距離之移動衝程縮短。故而，係能夠將在裝置內的剝離手61之移動空間抑制為最小限度。又，相較於並不實行由剝離手61所致之卷取而使剝離手61移動並進行熱可塑性樹脂B1之去除的情況，係成為能夠將熱可塑性樹脂B1統整為更小並進行回收。 若是前述之樹脂剝離工程結束，則剝離手61係從剝離結束位置而移動至回收部70之正上方的回收待機位置處，並到達回收待機位置，而從躺下之狀態來成為立起之狀態(在略鉛直之狀態下而使前端朝向下方的狀態)。此時，去除部72之一對之閘門構件72a係相互分離，並開口有能夠使剝離手61在保持有硬化狀態之熱可塑性樹脂B1的狀態下而進入至本體71內的大小，剝離手61係位置在一對之閘門構件72a之開口的正上方處。若是剝離手61從回收待機位置起而朝向鉛直方向作特定距離之下降，則一對之閘門構件72a係藉由移動機構72b而被關閉，該些之閘門構件72a係包夾剝離手61地而相對向。在一對之閘門構件72a包夾著剝離手61地而相對向的狀態下，剝離手61係一面藉由旋轉機構62e而進行旋轉一面上升，並回到原本的回收待機位置處。此時，藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1，係與一對之閘門構件72a之下端作抵接(參照圖19)，並藉由一對之閘門構件72a而被堵住，並且起因於剝離手61之上升而逐漸朝向剝離手61之下端(前端)移動，而從剝離手61脫落。從剝離手61而脫落了的硬化狀態之熱可塑性樹脂B1，係朝向本體71之底面而落下，並被本體71所收容。 在此樹脂回收工程中，藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1，係因應於剝離手61之移動，來藉由一對之閘門構件72a而被去除。藉由此，係成為能夠將藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1從剝離手61而去除。故而，由於從剝離手61而將熱可塑性樹脂B1去除並作回收的回收作業係被自動化，因此相較於讓作業者(使用者)來對於剝離手61進行清掃並將熱可塑性樹脂B1從剝離手61而回收之回收作業的情況，係能夠使生產效率提升，又，係能夠對於基板W之污染作抑制。由於若是使作業員來進行作業，則會成為需要先將裝置之門打開，之後再進行作業，因此係成為必須先使裝置停止再進行作業。故而，再加上也會耗費作業時間，生產效率係會降低。若是回收作業被自動化，則由於就算是當正在進行回收的途中也能夠對於其他的基板W而塗布熱可塑性樹脂B1，因此生產效率係提升。又，為了藉由作業員之作業來將熱可塑性樹脂B1去除，係成為需要先將裝置之門打開，之後再進行作業。而，將裝置之門開啟一事，由於係成為會使從外部而來之氣體氛圍進入至裝置內，因此裝置內係並不會保持為清淨之氛圍，而會有基板W被污染的情形。若是回收作業被自動化，則係能夠在將裝置內之氛圍保持為清淨的同時，亦將熱可塑性樹脂B1從剝離手61而回收。 如同以上所作了說明一般，若依據第4實施形態，則係能夠得到與第1實施形態相同之效果。又，去除部72，係具備有一對之閘門構件72a，該些之閘門構件72a，係包夾著剝離手61地而相對向，並因應於剝離手61之移動，而與藉由剝離手61所作了保持的硬化狀態之熱可塑性樹脂B1相抵接，並且將硬化狀態之熱可塑性樹脂B1從剝離手61而去除。藉由此，由於從剝離手61而將熱可塑性樹脂B1去除並作回收的回收作業係被自動化，因此相較於讓作業者來進行回收作業的情況，係能夠使生產效率提升，又，係能夠對於基板W之污染作抑制。 另外，在樹脂回收工程中，當使剝離手61朝向上方移動時，雖係使剝離手61進行旋轉，但是，係並不被限定於此，而亦可並不使其作旋轉。但是，為了使去除效率提升，較理想，係一面使剝離手61朝向上方移動，一面使剝離手61進行旋轉。又，雖然係並未使一對之閘門構件72a與剝離手61作接觸，但是，係並不被限定於此，亦可使其作接觸。不過，為了抑制剝離手61或一對之閘門構件72a之損傷乃至於起因於損傷所導致的塵埃之發生，較理想，係並不使一對之閘門構件72a與剝離手61作接觸。 ＜第5實施形態＞ 參考圖21以及圖22，針對第5實施形態作說明。另外，在第5實施形態中，係針對與第4實施形態間的相異點(回收部70)作說明，並省略其他之說明。 如同圖21以及圖22中所示一般，第5實施形態之本體71，係於上面處具備有開口部71b。此開口部71b，係被形成為能夠使剝離手61在保持有硬化狀態之熱可塑性樹脂B1的狀態下而進入至本體71內的大小。又，第5實施形態之去除部70，係具備有複數之輥72c。此些之輥72c，係在剝離手61所移動之方向上而被並排為2列，該些之列係以分離有特定之距離的方式而被作設置。又，各輥72c，係以相互連動地而在本體71之內側(圖21中之箭頭方向)處藉由旋轉機構72d來作旋轉的方式，而被形成。旋轉機構72b，係藉由連動構件和馬達(均未圖示)等而被構成，馬達係被與控制部80作電性連接，其之驅動係被控制部80所控制。前述之列間之特定之距離，係被設定為能夠使各輥72c與藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1作接觸並將該熱可塑性樹脂B1夾入的距離。各輥72c，係朝向使藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1朝向剝離手61之前端側(圖21之下端側)移動並被從剝離手61而拔除之方向來作旋轉。 在樹脂回收工程中，剝離手61係從剝離結束位置而移動至回收待機位置處，並到達回收待機位置，而從躺下之狀態來成為立起之狀態。此時，剝離手61，係在立起了的狀態下而位置在本體71之開口部71b之正上方處，去除部72之各輥72c，係開始朝向從剝離手61之前端來將硬化狀態之熱可塑性樹脂B1拔除的方向作旋轉。接著，剝離手61，係一面進行旋轉機構62e而進行旋轉，一面從回收待機位置起而朝向鉛直方向作特定距離之下降。各輥72c，係一面進行旋轉，一面將藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1作夾入，而使硬化狀態之熱可塑性樹脂B1從剝離手61起而朝向下方移動。又，剝離手61，係若是作特定距離之下降，則會在藉由各輥72c而使硬化狀態之熱可塑性樹脂B1被作了夾入的狀態下，一面進行旋轉一面上升，並回到原本之回收待機位置處。此時，藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1，係藉由各輥72c之旋轉以及剝離手61之上升而朝向剝離手61之下端(前端)移動，並從剝離手61脫落。從剝離手61而脫落了的硬化狀態之熱可塑性樹脂B1，係朝向本體71之底面而落下，並被本體71所收容。若是剝離手61回到原本之回收待機位置處，則各輥72c之旋轉係被停止。 在此樹脂回收工程中，藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1，係因應於各輥72c之旋轉以及剝離手61之移動，來藉由各輥72c而被從剝離手61拔除。藉由此，係成為能夠將藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1從剝離手61而去除並作回收。故而，與第4實施形態相同的，由於從剝離手61而將熱可塑性樹脂B1去除並作回收的回收作業係被自動化，因此相較於讓作業者來進行回收作業的情況，係能夠使生產效率提升，又，係能夠對於基板W之污染作抑制。 如同以上所作了說明一般，若依據第5實施形態，則係能夠得到與第4實施形態相同之效果。又，去除部72，係具備有可旋轉之一對之輥72c，該些之輥72c，係將藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1作夾入並進行旋轉，而將硬化狀態之熱可塑性樹脂B1從剝離手61而去除。藉由此，由於從剝離手61而將熱可塑性樹脂B1去除並作回收的回收作業係被自動化，因此相較於讓作業者來進行回收作業的情況，係能夠使生產效率提升，又，係能夠對於基板W之污染作抑制。 另外，作為去除部72，除了由各輥72c所致之去除以外，例如，係可替代各輥72c，而構成為在本體71之內部設置夾鉗手，並抓住被卷繞在剝離手61上之熱可塑性樹脂B1，再藉由移動機構來使夾鉗手下降，而從剝離手61來將熱可塑性樹脂B1去除。又，雖係構成為藉由輥機構或閘門機構來將熱可塑性樹脂B1去除，但是，係並不被限定於此，例如，係亦可使用在水平地作了設置的去除構件(例如板材)之側面處，於上下方向設置能夠使剝離手61作插入的直線狀之溝，並從與該去除構件(U字形狀之構件)之溝的延伸方向相交叉之方向(例如相正交之方向)來使剝離手61進入至溝內，再將該剝離手61朝向溝之延伸方向而上拉，來使熱可塑性樹脂B1勾掛在去除構件處並去除的機構。去除構件，係於中間包夾著剝離手61，而因應於剝離手61之移動來與藉由剝離手61所作了保持的硬化狀態之熱可塑性樹脂B1作抵接，並且將藉由剝離手61而被作了保持的硬化狀態之熱可塑性樹脂B1從剝離手61而去除。另外，前述之一對的閘門構件72a，亦係身為去除構件之其中一例。 又，在樹脂回收工程中，當藉由各輥72c來從剝離手61而將硬化狀態之熱可塑性樹脂B1去除時，雖係使剝離手61朝向上方移動，但是，係並不被限定於此，亦可構成為並不使其移動地而作固定。又，在樹脂回收工程中，當使剝離手61朝向上方移動時，雖係使剝離手61進行旋轉，但是，係並不被限定於此，在剝離手61之移動時或固定時，係可使其旋轉，亦可並不使其作旋轉。但是，為了使去除效率提升，較理想，係一面使剝離手61朝向上方移動，一面使剝離手61進行旋轉。 ＜其他實施形態＞ 在前述之說明中，作為剝離手61，雖係對於使用將硬化狀態之熱可塑性樹脂B1的一部分作捏抓之夾鉗狀或鑷子狀之手之構成作了例示，但是，係並不被限定於此，例如，係亦可構成為使用針狀之手(銷)、叉狀之手、鎳鉻合金線或燈管等之發熱體，又，係亦可構成為使用有吸引部。針狀之手，係突刺進硬化狀態之熱可塑性樹脂B1的一部分中，並將熱可塑性樹脂B1的一部分作保持。發熱體，係被形成為線狀或環狀、棒狀等，並發熱而使硬化狀態之熱可塑性樹脂B1的一部分熔化並付著於該一部分處而將熱可塑性樹脂B1的一部分作保持。吸引部，係將硬化狀態之熱可塑性樹脂B1的一部分作吸引並作保持。 又，在前述之說明中，雖係並未對於剝離手61之材質作限定，但是，作為剝離手61之材質，當剝離手61為具備有加熱體62c等之加熱機構的情況時，係能夠採用具有熱傳導性之金屬或陶瓷等。又，為了成為易於從剝離手61而將熱可塑性樹脂B1去除，係亦可將剝離手61之表面藉由例如氟樹脂等之材料來作被覆。 又，在前述之說明中(參照第4實施形態或第5實施形態)，雖係針對將與剝離手61作了接觸的熱可塑性樹脂B1於加熱後進行放置冷卻的情況作了例示，但是，係並不被限定於此，係亦可在剝離手61之內部設置冷卻機構(例如，帕耳帖元件)，並藉由冷卻機構來將剝離手61冷卻，來使與剝離手61作了接觸的熱可塑性樹脂B1冷卻。 又，在前述之說明中，雖係針對使將硬化狀態之熱可塑性樹脂B1之一部分作了保持的剝離手61朝向一方向移動並從基板W而將硬化狀態之熱可塑性樹脂B1剝離的情況作了例示，但是，係並不被限定於此，例如，係亦可構成為使將硬化狀態之熱可塑性樹脂B1之一部分作了保持的剝離手61進行旋轉並將硬化狀態之熱可塑性樹脂B1作卷取，而從基板W來將硬化狀態之熱可塑性樹脂B1剝離(參照第4實施形態或第5實施形態)。 又，在前述之說明中，雖僅針對使回收部70將硬化狀態之熱可塑性樹脂B1作回收的情況作了例示，但是，係並不被限定於此，例如，係亦可構成為在回收部70處設置加熱器，並藉由配管來將回收部70與儲存單元51之槽51a作連接，而將作了回收的硬化狀態之熱可塑性樹脂B1藉由加熱器來作加熱並使其軟化，再將軟化狀態之熱可塑性樹脂B1藉由配管來回送至槽51a處。於此情況，由於係成為能夠對於熱可塑性樹脂B1進行再利用，因此，係能夠對成本作抑制，又，係能夠對起因於熱可塑性樹脂B1之廢棄所致的對環境所造成的負擔有所抑制。 又，係亦能夠以使熱可塑性樹脂B1被從供給噴嘴52而適當地吐出的方式，來在供給位置處之吐出動作之前，先進行試行吐出。例如，在供給噴嘴52被定位於供給位置處時，係事先於待機位置處而從供給噴嘴52來吐出熱可塑性樹脂B1(事先吐出)。被從供給噴嘴52所吐出了的熱可塑性樹脂B1，係構成為藉由設置在供給噴嘴52之下方處的承盤來作承接。亦可構成為將供給噴嘴52定位於回收部70之上方處並進行事先吐出。在上述之對於熱可塑性樹脂B1進行再利用的構成中，係亦可構成為於待機時將供給噴嘴52定位於回收部70之上方處並將熱可塑性樹脂B1連續性地持續吐出。 又，在使用剝離手61而將硬化了的熱可塑性樹脂B1剝下時，係亦可構成為對於硬化了的熱可塑性樹脂B1吹附加熱流體並在將熱可塑性樹脂B1之一部分作了熔化的狀態下來進行捏抓。 又，若是想要使剝離手61之離模性提升，則係亦可設置將被定位於回收部70處之剝離手61或者是剝離手61所保持的熱可塑性樹脂B1加熱之溫風加熱器等之加熱構件。 又，係亦可將由供給噴嘴52所致之熱可塑性樹脂B1之塗布，構成為一面使供給噴嘴52進行移動一面例如在台30之旋轉半徑方向上移動地來進行。 又，在熱可塑性樹脂B1之供給中，係只要使台30上之基板W與供給噴嘴52進行相對移動即可，例如，係亦可構成為並不進行台30之旋轉，而相對於台30上之基板W之外周端部A1來使供給噴嘴52移動，而進行熱可塑性樹脂B1之供給。作為使基板W以及供給噴嘴52作相對移動之機構，除了使台30作旋轉之移動機構40以外，例如，係亦可使用使供給旋轉機構52沿著圓環或矩形環等之環或者是沿著直線來移動的移動機構(作為其中一例，例如，將供給噴嘴52作支持並成為能夠使其曲線狀或直線狀地進行滑動移動的導引構件、成為滑動移動之驅動源之馬達等)。 又，雖係構成為若是在基板W處之熱可塑性樹脂B1之附著開始點作了1圈的環繞，則使從供給噴嘴52而來之熱可塑性樹脂B1之吐出停止，但是，係亦可構成為將從供給噴嘴52而來之熱可塑性樹脂B1的吐出在使附著開始點作了2圈以上之移動之後再停止。特別是，在如同圖5之後所示之實施形態一般地對於在基板W處之與重力方向相正交之外周區域A1a處進行塗布的情況時，較理想，係涵蓋2圈以上地來進行塗布。此係因為，相較於以1圈來進行塗布的情況，為了得到相同之塗布寬幅、相同之膜厚的熱可塑性樹脂B1，係能夠使從供給噴嘴52而來之每單位時間之吐出量減少。因此，係能夠使被塗布在基板W、台30或者是導引構件100處的熱可塑性樹脂B1之寬幅、厚度均成為易於控制之故。進而，於此情況，係亦可構成為在每次繞圈時使供給噴嘴52在基板之半徑方向上而有所偏移。 以上，雖係針對本發明之數個實施形態作了說明，但是，此些之實施形態係僅為作為例子所提示者，而並非為對於發明之範圍作限定。此些之新穎的實施形態，係可藉由其他之各種形態來實施，在不脫離發明之要旨的範圍內，係可進行各種之省略、置換、變更。此些之實施形態或其變形，係亦被包含於發明之範圍或要旨中，並且亦被包含在申請專利範圍中所記載的發明及其均等範圍內。<First Embodiment> With reference to Figs. 1 to 8, the first embodiment will be described. (Basic structure) As shown in FIG. 1, the substrate processing apparatus 10 of the first embodiment is provided with a processing chamber 20, a table 30, and a rotating mechanism 40, a resin supply part 50, and a peeling part 60, and The collection unit 70 and the control unit 80. The processing chamber 20 is a processing box for processing the substrate W provided with the processed surface Wa. This processing chamber 20 is formed into a box shape, for example, and accommodates a table 30, a part of the rotating mechanism 40, a part of the resin supply part 50, a peeling part 60, and the like. As the substrate W, for example, a wafer or a liquid crystal substrate is used. This substrate W becomes the object of etching processing, that is, it becomes the object of etching. On the upper surface of the aforementioned processing chamber 20, a cleaning unit 21 is provided. The cleaning unit 21, for example, is equipped with a filter such as a HEPA filter and a fan (none of which are shown), and purifies the downward blowing flow from the top surface of the cleaning room where the substrate processing apparatus 10 is installed. It is introduced into the processing chamber 20 to generate an airflow flowing from above to below in the processing chamber 20. The cleaning unit 21 is electrically connected to the control unit 80, and its drive system is controlled by the control unit 80. The table 30 is positioned near the center of the processing chamber 20, and is horizontally installed on the rotating mechanism 40 so as to be able to rotate in a horizontal plane. This table 30 is, for example, called a spin table. The center of the processed surface Wa of the substrate W is positioned on the rotation axis of the table 30. The stage 30, for example, sucks and holds the substrate W placed on it (suction holding). The rotating mechanism 40 supports the table 30 and is configured to rotate the table 30 in a horizontal plane. For example, the rotating mechanism 40 is provided with a rotating shaft connected to the center of the table 30, and a motor (both not shown) that rotates the rotating shaft. The rotating mechanism 40 is driven by a motor to rotate the table 30 via a rotating shaft. The rotating mechanism 40 is electrically connected to the control unit 80, and its drive system is controlled by the control unit 80. The resin supply unit 50 includes a storage unit 51, a supply nozzle 52, and a nozzle moving mechanism 53. The resin supply part 50 is moved by the nozzle moving mechanism 53 to position the supply nozzle 52 above the outer peripheral end A1 of the substrate W on the table 30, and is sent from the storage unit 51 to the supply nozzle 52 for softening. The thermoplastic resin in a softened state is supplied from the supply nozzle 52 to the outer peripheral end A1 of the substrate W on the stage 30. In addition, the details of the outer peripheral end portion A1 of the substrate W will be described later. Here, as the thermoplastic resin, for example, PVA (polyvinyl alcohol), EVA (ethylene vinyl acetate copolymer), and urethane resin are used. This thermoplastic resin is poorly soluble, that is, resistant to the etching liquid used in the etching process, and functions as a protective material that protects the substrate W from the etching liquid. Thermoplastic resin, for example, softens if its temperature becomes 150°C or higher, and hardens if it becomes lower than 150°C. The hardened state can also be gelatinous. The storage unit 51 includes a tank 51a, an on-off valve 51b, and a pump 51c. The groove 51a is provided with a heater 51a1, and the thermoplastic resin is heated by the heater 51a1 to store the thermoplastic resin in a softened state. The heater 51a1 functions as a heating part that softens the thermoplastic resin by heat. The groove 51a is connected to the supply nozzle 52 via the supply pipe 51a2. The on-off valve 51b and the pump 51c are provided in the middle of the path of the supply pipe 51a2. The opening/closing valve 51b, such as a solenoid valve, controls the flow (supply amount, supply timing, etc.) of the softened thermoplastic resin flowing in the supply pipe 51a2. The softened thermoplastic resin is sent to the driving source at the supply nozzle 52. The on-off valve 51b, the heating unit such as the pump 51c, the heater 51a1, etc. are electrically connected to the control unit 80, and their driving system is controlled by the control unit 80. In addition, preferably, a heater (not shown) extending along the extension path of the supply pipe 51a2 is also provided on the outer peripheral wall of the supply pipe 51a2. In this case, the heater also functions as a heating portion that softens the thermoplastic resin by heat, and maintains the softened state of the thermoplastic resin flowing in the supply pipe 51a2. The supply nozzle 52 is formed to be able to swing in the horizontal direction along the processed surface Wa of the substrate W on the table 30 above the table 30 by the nozzle moving mechanism 53, and is also formed to be able to move in the horizontal direction. Move in the vertical direction. The supply nozzle 52 is opposed to the outer peripheral end A1 of the substrate W on the stage 30, and sends the softened thermoplastic resin supplied from the groove 51a through the supply pipe 51a2 toward the substrate W on the stage 30 The outer peripheral end A1 is supplied. As the supply nozzle 52, for example, a dispenser is used. In addition, the supply nozzle 52 is provided with a heater 52a. The heater 52a functions as a heating portion that softens the thermoplastic resin by heat, and maintains the softened state of the thermoplastic resin flowing in the supply nozzle 52. The heater 52a is electrically connected to the control unit 80, and its driving system is controlled by the control unit 80. The nozzle moving mechanism 53 is provided with a movable arm 53a and an arm moving mechanism 53b. The movable arm 53a is horizontally supported by the arm moving mechanism 53b, and holds the supply nozzle 52 at one end. The arm moving mechanism 53b holds the end of the movable arm 53a opposite to the supply nozzle 52, and makes the movable arm 53a swing in the horizontal direction along the processed surface Wa of the substrate W on the table 30, and Make it rise and fall in the vertical direction. The arm moving mechanism 53b is electrically connected to the control unit 80, and its driving system is controlled by the control unit 80. For example, the nozzle moving mechanism 53 is such that the supply nozzle 52 is positioned at the "supply position directly above the outer peripheral end portion A1 of the substrate W on the table 30" and "avoid from above the table 30 to allow the substrate W to be carried in." And move out between the standby position". In addition, the supply nozzle 52 shown in FIG. 1 is located at the supply position. Here, as shown in FIG. 2, the outer peripheral end portion A1 of the substrate W is formed by the outer peripheral area A1a of the upper surface of the substrate W (the processed surface Wa) and the outer peripheral surface of the substrate W (the end surface of the outer periphery of the substrate W). ) A1b, and the outer peripheral area A1c of the lower surface of the substrate W to constitute it. In addition, as shown in FIGS. 2 and 3, on the upper surface of the substrate W, there is an etching target region R1 that is the target of the etching process in the etching process. The etching target area R1 is the area on the upper surface of the substrate W after the outer peripheral area A1a of the upper surface of the substrate W is removed. The area other than the etching target area R1 is a non-etching target area that is not the target of the etching process during the etching process. In FIG. 3, the etching target area R1 is a circular area, and the outer peripheral area A1a of the upper surface of the substrate W and the outer peripheral area A1c of the lower surface of the substrate W (see FIG. 2) are respectively directed from the outer periphery of the substrate W The inner side (the center side of the substrate W) is provided with a ring-shaped area having a specific width of several mm (for example, 4 mm or less). For example, the supply nozzle 52 is located just above the outer peripheral surface A1b of the substrate W on the stage 30 as shown in FIG. 2, and supplies the softened thermoplastic resin B1 to the upper portion of the outer peripheral surface A1b. In addition, the softened thermoplastic resin B1 has the desired viscosity. Therefore, the thermoplastic resin B1 supplied to the upper part of the outer peripheral surface A1b of the substrate W covers the outer peripheral surface A1b of the substrate W The way gradually expands downward. If the thermoplastic resin B1 is discharged from the supply nozzle 52, it will gradually harden from the surface layer. The temperature of the thermoplastic resin B1 adhering to the substrate W drops sharply, and the temperature of the thermoplastic resin B1 adhering to the substrate W decreases sharply. The thermoplastic resin B1 hardens rapidly. The temperature of the substrate W on the stage 30 is reduced due to the airflow in the processing chamber 20 (for example, the airflow flowing from above to below). Therefore, if the thermoplastic resin B1 discharged from the supply nozzle 52 adheres to the substrate W, the temperature of the thermoplastic resin B1 tends to drop sharply. When the resin is supplied, since the stage 30 is rotated by the rotating mechanism 40, the substrate W on the stage 30 is also in a rotating state. Therefore, the thermoplastic resin B1 discharged from the supply nozzle 52 is sequentially adhered along the outer peripheral surface A1b of the substrate W in response to the rotation of the substrate W. By this, as shown in FIG. 3, the entire surface of the outer peripheral surface A1b of the substrate W is coated with the thermoplastic resin B1, and the entire surface of the outer peripheral surface A1b of the substrate W is covered with the thermoplastic resin B1 ( Resin coating is complete). The resin-coated substrate W is carried out from the processing chamber 20 by a conveying device (not shown) equipped with a robot, etc., and is carried into the etching process of an individual different from the substrate processing apparatus 10 In the device (not shown), it is treated with an etching solution (details will be described later). In addition, in a state where the supply nozzle 52 is positioned at the supply position, the vertical separation distance between the supply nozzle 52 and the substrate W on the stage 30 is set to a specific distance. This specific distance is experimentally determined in advance according to the type of thermoplastic resin B1 used (the viscosity in a softened state), together with the supply amount of the thermoplastic resin B1 and the number of rotations of the table 30, etc. take out. That is, the specific distance, the supply amount of the thermoplastic resin B1, and the number of rotations of the table 30, etc. are such that the thermoplastic resin B1 discharged from the supply nozzle 52 covers only the outer peripheral surface A1b of the substrate W and hardens The method is set in advance. Returning to FIG. 1, the peeling part 60 is provided with a peeling hand 61 and a hand moving mechanism 62. The peeling part 60 is moved and positioned above the outer peripheral end A1 on the stage 30 by the hand moving mechanism 62, and the peeling hand 61 is removed from the outer periphery of the substrate W on the stage 30. The end A1 peels off the thermoplastic resin B1 in the hardened state. Here, the thermoplastic resin B1 has a lower degree of adhesion to the substrate W than other materials such as thermosetting resins. Therefore, it is possible to adhere to the substrate W without damaging the substrate W. The thermoplastic resin B1 hardened on the substrate W is mechanically peeled off. On the other hand, if it is intended to mechanically peel off the thermosetting resin that has been hardened and adhered to the substrate W, the substrate W will be damaged. In addition, if the thermosetting resin is cured once, the thermosetting resin cannot be softened by heat. In order to remove the thermosetting resin, it is necessary to dissolve the thermosetting resin with a chemical solution or the like. The peeling hand 61 is formed to be able to move above the table 30 by the hand moving mechanism 62. The peeling hand 61 is lowered facing the outer peripheral end A1 of the substrate W on the stage 30 by the hand moving mechanism 62, and pinches a part of the thermoplastic resin B1 in the hardened state of the outer peripheral end A1 , And ascend and move along the processed surface Wa of the substrate W on the stage 30, and the cured thermoplastic resin B1 is peeled from the substrate W on the stage 30. As the peeling hand 61, for example, a pliers-shaped or forceps-shaped hand is used. The hand movement mechanism 62 is provided with a movable arm 62a and an arm movement mechanism 62b. The movable arm 62a is supported by the arm moving mechanism 62b, and holds the peeling hand 61 at one end. The arm movement mechanism 62b is to hold the end of the movable arm 62a on the opposite side of the peeling hand 61, and the swing of the movable arm 62a in the vertical direction with one end as the center of rotation and the arm movement mechanism 62b Shake in the horizontal direction of itself to move the peeling hand 61. The arm moving mechanism 62b is electrically connected to the control unit 80, and its driving system is controlled by the control unit 80. For example, the aforementioned hand movement mechanism 62 is such that the peeling hand 61 is positioned at the peeling start position directly above the outer peripheral end A1 of the substrate W on the table 30 (as one example, the position directly above the outer peripheral surface A1b of the substrate W "Nearby)" and "Peeling end position centered on the rotation axis of the table 30 (rotation axis of the substrate W) with respect to the peeling start position" and "recovery position directly above the recovery part 70" and " It becomes a standby position where the substrate W can be moved in and out. In addition, the peeling hand 61 shown in FIG. 1 is in the standby position. The recovery part 70 is provided around the table 30 so as not to interfere with the rotation of the table 30. This recovery part 70 recovers the thermoplastic resin B1 in the hardened state peeled off by the peeling hand 61. For example, the recovery part 70 is formed in a box shape with an upper opening, and receives and recovers the cured thermoplastic resin B1 separated from the peeling hand 61 and dropped. The control section 80 is provided with a microcomputer for centralized control of each section, and a memory section (none of which is shown) that memorizes substrate processing information and various programs related to substrate processing. The control unit 80 is based on substrate processing information and various programs to perform the rotation of the table 30 by the rotation mechanism 40, the supply of the thermoplastic resin B1 by the resin supply unit 50, and the peeling unit 60 The resulting control of the peeling action of the thermoplastic resin B1, etc. (including various processes related to the control). (Substrate Processing Process) Next, the flow of the substrate processing process performed by the aforementioned substrate processing apparatus 10 will be described. In this substrate processing process, the control section 80 controls the actions of each section. As shown in FIG. 4, in step S1, the unprocessed substrate W is moved into the processing chamber 20 by a robot and placed on the table 30, and the substrate W that has been placed is borrowed It is adsorbed and held by the stage 30. The robot hand is avoided from the processing chamber 20 after the substrate W is placed. In addition, when the substrate W is carried in, the supply nozzle 52 and the peeling hand 61 are positioned at the standby position. If the aforementioned robot is evacuated from the processing chamber 20, in step S2, the softened thermoplastic resin B1 is coated on the outer peripheral end A1 of the substrate W on the stage 30. First, the table 30 starts to rotate by the rotation mechanism 40, and the supply nozzle 52 is moved from the standby position to the supply position by the nozzle moving mechanism 53. If the supply nozzle 52 reaches the supply position, the supply nozzle 52 is positioned directly above the outer peripheral surface A1b of the substrate W on the stage 30 (refer to FIG. 2). If the number of rotations of the stage 30 becomes a specific number of rotations (for example, 10rpm), the softened thermoplastic resin B1 is discharged toward the upper part of the outer peripheral surface A1b of the substrate W. The thermoplastic resin B1 discharged from the supply nozzle 52 is sequentially adhered along the outer peripheral surface A1b of the substrate W in response to the rotation of the substrate W. If, for example, the attachment start point of the thermoplastic resin B1 at the substrate W surrounds one round, the thermoplastic resin B1 is coated on the entire surface of the outer peripheral surface A1b of the substrate W (refer to FIG. 3), and the stage 30 The entire outer peripheral surface A1b of the upper substrate W is covered by the thermoplastic resin B1. The thickness of the thermoplastic resin B1 coated on the outer peripheral surface A1b is, for example, 0.5 to 3 mm. If the resin coating is completed and the discharge is stopped, the table 30 stops rotating, and the supply nozzle 52 moves from the coating position to the standby position. In addition, the thermoplastic resin B1 coated on the outer peripheral surface A1b is in a hardened state due to a decrease in temperature. If the aforementioned supply nozzle 52 returns to the standby position, in step S3, the resin-coated substrate W is carried out from the table 30 by the aforementioned robot (not shown) to the outside of the processing chamber 20. And was carried into the etching processing equipment (not shown). After that, by the etching processing device, the processed surface Wa of the substrate W is processed by the etching liquid. In the etching process, the etching solution is supplied to, for example, the vicinity of the center of the processed surface Wa of the substrate W rotating at 50 rpm. The supplied etching solution is caused by the centrifugal force caused by the rotation of the substrate W. It expands to the entire surface Wa of the substrate W to be processed. By this, the liquid film of the etching liquid is formed on the processed surface Wa of the substrate W, and the processed surface Wa of the substrate W is processed by the etching liquid. At this time, the thermoplastic resin B1 in the hardened state functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etchant. The substrate W after the etching process is sequentially subjected to a cleaning process using a cleaning solution and a drying process caused by the high-speed rotation of the substrate W in the etching processing apparatus. In step S4, by the aforementioned robotic hand, the substrate W that has been etched is transported into the processing chamber 20 again and placed on the stage 30, and the mounted substrate W is moved by the stage 30. It is held by adsorption. The robot hand is avoided from the processing chamber 20 after the substrate W is placed. In addition, when the substrate W is carried in, the supply nozzle 52 and the peeling hand 61 are positioned at the standby position. If the aforementioned robotic hand is evacuated from the processing chamber 20, the cured thermoplastic resin B1 is removed from the outer peripheral end A1 of the substrate W on the stage 30 in step S5. First, the peeling hand 61 is moved from the standby position to the peeling start position by the hand moving mechanism 62. If the peeling hand 61 reaches the peeling start position, it is positioned directly above the outer peripheral surface A1b of the substrate W on the table 30 and descends, and a part of the cured thermoplastic resin B1 attached to the outer peripheral surface A1b is pinched. Grasp. In addition, if the thermoplastic resin B1 in the hardened state has elasticity, the gripping system by the peeling hand 61 can be performed extremely easily. The peeling hand 61 lifts up while pinching a part of the cured thermoplastic resin B1, and moves from the peeling start position to the peeling end position, and removes the cured thermoplastic resin B1 from the substrate W The outer peripheral surface A1b is peeled off. By this, the thermoplastic resin B1 in the hardened state is removed from the substrate W. If this resin removal is completed, the peeling hand 61 moves from the peeling end position to the recovery position, and if it reaches the recovery position, the cured thermoplastic resin B1 is separated and dropped toward the recovery part 70. The recovery part 70 receives and accommodates the dropped thermoplastic resin B1 in a hardened state. If the peeling hand 61 drops the cured thermoplastic resin B1 at the recovery position, it moves from the recovery position to the standby position. If the aforementioned peeling hand 61 returns to the standby position, in step S6, the substrate W on which resin peeling is completed is carried out of the processing chamber 20 by the aforementioned robotic hand (not shown) from the table 30. And in order to proceed to the next process, it is transported by the transport device. In this substrate processing process, the softened thermoplastic resin B1 is coated on the outer peripheral surface A1b of the substrate W on the stage 30, which is a part of the outer peripheral end A1, and the entire surface of the outer peripheral surface A1b is in a hardened state Covered by the thermoplastic resin B1. As a result, in the etching process, which is a subsequent process, the cured thermoplastic resin B1 functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etching solution. Therefore, the substrate W The erosion of the outer peripheral surface A1b by the etchant is suppressed, and the reduction of the diameter of the substrate W, that is, the reduction of the size of the substrate, can be suppressed. As a result, it is possible to obtain an element wafer of a desired size even in the outer peripheral portion of the substrate W, so that the occurrence of the loss of the element wafer can be suppressed. In addition, it is possible to carry out the substrate transfer in the subsequent process such as the transfer by the robot in the subsequent process, and the yield can be improved. In addition, the thermoplastic resin B1 in the hardened state is peeled off by the peeling hand 61 and removed from the substrate W. By this, compared to the case where the cured thermoplastic resin B1 is dissolved and removed from the substrate W with a chemical solution, the cured thermoplastic resin B1 can be removed from the substrate W in a short time, and There is also no need to use chemical liquids, so the burden on the environment caused by the disposal of chemical liquids can be suppressed. In addition, the thermoplastic resin B1 has a lower degree of adhesion to the substrate W than the thermosetting resin. Therefore, by using the thermoplastic resin B1 instead of the thermosetting resin, the thermoplastic resin B1 in the hardened state on the substrate W can be easily peeled from the substrate W, and the substrate W can be removed without causing damage to the substrate W. The thermoplastic resin B1 in the hardened state is removed from the substrate W. When a thermosetting resin is used, in order to remove the thermosetting resin in a hardened state from the substrate W without causing damage to the substrate W, it is necessary to install a device for removal by a chemical solution or the like. And it leads to the complexity of the device and the increase in cost. As described above, according to the first embodiment, the softened thermoplastic resin B1 is supplied to the outer peripheral end A1 of the substrate W on the stage 30, for example, to the outer peripheral surface A1b of the substrate W , The outer peripheral surface A1b is covered by the hardened thermoplastic resin B1. As a result, in the etching process, the outer peripheral surface A1b of the substrate W is protected by the thermoplastic resin B1 in the hardened state, and the erosion caused by the etching solution is suppressed, so that the reduction in the size of the substrate can be performed. inhibition. (Other examples of resin coating) The aforementioned example of resin coating by the supply nozzle 52 is taken as the first example, and as another example of resin coating, the second, third, and fourth examples will be described. . As a second example, as shown in FIG. 5, the supply nozzle 52 is positioned directly above the outer peripheral area A1a of the substrate W on the stage 30, for example, in the outer peripheral area A1a and located close to the outer side of the substrate W. Immediately above the outer peripheral area A1a, the softened thermoplastic resin B1 is supplied. In the second example, compared with the first example, the supply amount of the thermoplastic resin B1 in a softened state is larger. The thermoplastic resin B1 supplied to the outer peripheral area A1a of the substrate W gradually expands so as to cover the outer peripheral area A1a and further cover the outer peripheral surface A1b connected to the outer peripheral area A1a. During this resin supply, since the substrate W on the stage 30 rotates together with the stage 30, the thermoplastic resin B1 discharged from the supply nozzle 52 is along the outer peripheral area A1a of the substrate W in response to the rotation of the substrate W And the outer peripheral surface A1b is attached in order. However, for example, if the attachment start point of the thermoplastic resin B1 at the substrate W is surrounded by one circle, as shown in FIG. The resin B1 is coated, and the entire surface of the outer peripheral area A1a of the substrate W and the entire surface of the outer peripheral surface A1b are covered with the thermoplastic resin B1. As a third example, as shown in FIG. 7, the supply nozzle 52 is positioned directly above the outer peripheral area A1a of the substrate W on the stage 30, for example, at the outer peripheral area A1a, and is positioned at a position higher than that of the second example. It is closer to the position directly above the outer side of the substrate W, and the softened thermoplastic resin B1 is supplied to the outer peripheral area A1a. In the third example, compared with the second example, the supply amount of the thermoplastic resin B1 in a softened state is larger. The thermoplastic resin B1 supplied to the outer peripheral area A1a of the substrate W covers the outer peripheral area A1a of the substrate W, and further covers the outer peripheral surface A1b connected to the outer peripheral area A1a and the outer peripheral area A1c connected to the outer peripheral surface A1b , And gradually expanded. During this resin supply, since the substrate W on the stage 30 rotates together with the stage 30, the thermoplastic resin B1 discharged from the supply nozzle 52 is along the outer peripheral area A1a of the substrate W in response to the rotation of the substrate W , The outer peripheral surface A1b and the outer peripheral area A1c are attached in order. However, for example, if the attachment start point of the thermoplastic resin B1 at the substrate W surrounds one circle, the thermoplastic resin B1 is on the entire surface of the outer peripheral area A1a of the substrate W, the entire surface of the outer peripheral surface A1b, and a part of the outer peripheral area A1c. It is coated, and the entire surface of the outer peripheral area A1a, the entire surface of the outer peripheral surface A1b, and a part of the outer peripheral area A1c of the substrate W are covered with the thermoplastic resin B1. As a fourth example, as shown in FIG. 8, the supply nozzle 52 is positioned directly above the outer peripheral area A1a of the substrate W on the stage 30, for example, at the outer peripheral area A1a and is located closer to the second example. Just above the position on the inner side of the substrate W, the softened thermoplastic resin B1 is supplied to the outer peripheral area A1a. In the fourth example, compared with the second example, the supply amount of the thermoplastic resin B1 in a softened state is less. The thermoplastic resin B1 supplied to the outer peripheral area A1a of the substrate W gradually expands so as to cover the outer peripheral area A1a of the substrate W. During this resin supply, since the substrate W on the stage 30 rotates together with the stage 30, the thermoplastic resin B1 discharged from the supply nozzle 52 is along the outer peripheral area A1a of the substrate W in response to the rotation of the substrate W To attach in order. However, for example, if the attachment start point of the thermoplastic resin B1 on the substrate W surrounds one round, the thermoplastic resin B1 is coated on the entire surface of the outer peripheral area A1a of the substrate W, and the outer peripheral area A1a of the substrate W The entire surface is covered by thermoplastic resin B1. In the second to fourth examples described above, the same as the first example described above, it is possible to suppress the reduction in the size of the substrate. In addition, the vertical separation distance between the supply nozzle 52 and the substrate W on the stage 30 when the thermoplastic resin B1 is supplied, the supply position, the supply amount, the number of rotations of the stage 30, etc., are experimentally determined in advance. Regarding this point, it is the same as the first example. In the fourth example, the entire surface of the outer peripheral surface A1b of the substrate W is not covered by the thermoplastic resin B1, but the entire surface of the outer peripheral area A1a of the substrate W is covered by the thermoplastic resin B1 (see FIG. 8). In the etching process, the etching liquid supplied to the vicinity of the center of the processed surface Wa of the rotating substrate W is expanded to the processed surface Wa of the substrate W by the centrifugal force caused by the rotation of the substrate W All. This expanded etching solution is caused by the centrifugal force caused by the rotation of the substrate W to scatter away from the substrate W. However, at this time, the hardened state heat adheres to the outer peripheral area A1a of the substrate W. For the plastic resin B1, the scattering direction of the etching solution is deviated upward with respect to the horizontal plane. Therefore, the inflow of the etching liquid to the outer peripheral surface A1b of the substrate W is suppressed. As a result, as in the first example described above, it is possible to suppress the reduction in the size of the substrate. The fourth example is preferably used when the outer peripheral surface A1b or the lower surface of the substrate W is coated with SiN or SiO 2 . However, preferably, in order to reliably protect the outer peripheral surface A1b of the substrate W from etching liquid, the entire outer peripheral surface A1b is completely covered by the thermoplastic resin B1. In addition, in the resin coating method of the first to fourth examples described above, the control unit 80 supplies the thermoplastic resin B1 to the supply position of the thermoplastic resin B1 to the substrate W on the stage 30 of the supply nozzle 52, that is, the supply position for the heat The nozzle moving mechanism 53 is controlled by changing the position on the substrate W to which the plastic resin B1 is supplied. For example, when the control unit 80 causes the supply nozzle 52 to supply the thermoplastic resin B1 to the outer peripheral surface A1b of the substrate W on the stage 30 (the first example), and when the supply nozzle 52 supplies the thermoplastic resin B1 to the outer peripheral area of the upper surface of the substrate W on the stage 30 When the thermoplastic resin B1 is applied to the A1a and the outer peripheral surface A1b (the second example), the nozzle moving mechanism 53 is controlled by changing the supply position of the thermoplastic resin B1 to the substrate W on the table 30. <Second Embodiment> With reference to Figs. 9 to 14, the second embodiment will be described. In addition, in the second embodiment, the differences from the first embodiment (table, cup, and processing liquid supply part) will be described, and other descriptions will be omitted. As shown in FIG. 9, the substrate processing apparatus 10 of the second embodiment is further provided with a cup 85 and a processing liquid supply part 90 in addition to the parts 20 to 80 of the first embodiment. In addition, the stage 30 of the second embodiment is a stage different from that of the first embodiment in the substrate holding mechanism. The stage 30 does not suck and hold the substrate W as in the first embodiment, but is provided with a plurality of holding members 31. The holding members 31 hold the substrate on the upper surface of the stage 30. W clamped in and kept in a horizontal state. For example, the number system of the holding members 31 is six. Each holding member 31 is as shown in FIG. 10, and is provided with a rotating member 31a and a pin 31b, respectively. The rotating member 31a is rotatably supported by the table 30, and is pressed downward in the vertical direction by a pressing member 31c such as a coil spring. The pin 31b is attached to the upper surface of the rotating member 31a, and is arranged eccentrically with respect to the center of rotation of the rotating member 31a. The six rotating members 31a are formed so as to be capable of being rotated and raised and lowered by rotating the raising and lowering mechanism 32. For example, if each rotating member 31a rotates in a clockwise direction when viewed from a plane, each pin 31b rotates eccentrically and abuts against the outer peripheral surface A1b of the substrate W from the horizontal direction, and clamps the substrate W. Into and to keep. Moreover, if each rotating member 31a rotates counterclockwise in a plan view, the holding system of the substrate W by each pin 31b is released. In addition, as shown in FIG. 12, it corresponds to each holding member 31, and at each 60-degree interval with the center of the table 30 as the center, the cut-out portions 30a are aligned, and they are not opposed to the holding members. The holding action and the lifting action of the member 31 are formed at the table 30 in such a way as to cause obstacles. The rotating lifting mechanism 32 is as shown in FIG. 10, and includes a rotating mechanism 32a and a lifting mechanism 32b. The rotating mechanism 32a rotates the six rotating members 31a in synchronization with the table 30. The elevating mechanism 32b moves the six rotating members 31a synchronously to move up and down in the vertical direction. For example, as the rotating mechanism 32a, a gear is used, and as the lifting mechanism 32b, an annular plate 32b2 that is raised and lowered by an air cylinder 32b1 is used. The lifting mechanism 32b pushes up the holding members 31 together and raises them. If this push-up state is released, each holding member 31 is pushed down and lowered by the pushing force of the respective pushing member 31c, and returns to the original position. The rotating lifting mechanism 32 is electrically connected to the control unit 80, and its driving system is controlled by the control unit 80. Returning to FIG. 9, for example, the rotating lifting mechanism 32 makes each holding member 31 "position the substrate W on the table 30 in the cup 85 and allow the processing liquid scattered from the processed surface Wa of the substrate W to be Move between the processing position received by the inner peripheral surface of the cup 85" and "position the substrate W on the table 30 outside the cup 85 to be a carry-in/out position where the substrate W can be carried in and out". In addition, each holding member 31 shown in FIG. 9 is located at the processing position. The cup 85 is the accommodating table 30, and is formed to receive the processing liquid scattered from the processed surface Wa of the substrate W held by the table 30. For example, the cup 85 is formed in a cylindrical shape with an upper opening. The upper part of the peripheral wall of the cup 85 is inclined toward the inside, and opens so as to expose the processed surface Wa of the substrate W on the table 30. The cup 85 receives the processing liquid scattered from the processed surface Wa of the substrate W on the table 30 due to the rotation of the table 30 on the inner peripheral surface. The scattered treatment liquid collides with the inner circumferential surface of the cup 85, flows along the inner circumferential surface of the cup 85 to the bottom of the cup 85, and flows from a discharge port (not shown) at the bottom surface of the cup 85 And was discharged. The processing liquid supply unit 90 includes a plurality of supply nozzles 91 and a nozzle moving mechanism 92. The processing liquid supply portion 90 is moved by the nozzle moving mechanism 92 to move the supply nozzles 91 and are positioned above the center of the table 30, and from the supply nozzles 91 to the substrate W on the table 30 respectively The treatment liquid is supplied near the center of the treated surface Wa. Each supply nozzle 91 is formed to be able to swing in the horizontal direction along the processed surface Wa of the substrate W on the table 30 above the table 30 by the nozzle moving mechanism 92. These supply nozzles 91 are positioned above the vicinity of the center of the processed surface Wa of the substrate W on the table 30, and respectively supply processing liquids (for example, etching liquid or cleaning liquid, Ultra-pure water). In addition, each supply nozzle 91 is supplied with a processing liquid from a tank (not shown) outside the processing chamber 20, respectively. For example, the supply nozzle 91 of each supply nozzle 91 is supplied with etching liquid, the other supply nozzle 91 is supplied with cleaning liquid, and the other supply nozzle 91 is supplied with cleaning liquid. 91 places are supplied with ultra-pure water. The nozzle moving mechanism 92 is provided with a movable arm 92a and an arm moving mechanism 92b. The movable arm 92a is horizontally supported by the arm moving mechanism 92b, and holds each supply nozzle 91 at one end. The arm moving mechanism 92b holds the end of the movable arm 92a opposite to each supply nozzle 91 and swings the movable arm 92a in the horizontal direction along the processed surface Wa of the substrate W on the table 30. The arm moving mechanism 92b is electrically connected to the control unit 80, and its driving system is controlled by the control unit 80. For example, the nozzle moving mechanism 92 enables each supply nozzle 91 to be provided at the "supply position directly above the center of the substrate W on the table 30 to be processed near the center of the surface Wa on the table 30" and "avoid from above the table 30. Move the substrate W between the waiting positions for loading and unloading. In addition, each supply nozzle 91 shown in FIG. 9 is located at the supply position. Here, as shown in FIGS. 11 and 12, the table 30 is used to hold the substrate W held by the holding members 31 positioned at the processing position, that is, to position the substrate W at the processing position. The outer peripheral surface A1b of the substrate W on each holding member 31 is formed so as to surround it. As shown in FIG. 11, the height position of the upper surface of the table 30 and the height position of the upper surface of the substrate W on each holding member 31 at the processing position are approximately the same. In addition, in FIG. 12, the holding members 31 are arranged on the same circumference with the rotation axis of the table 30 as the center, and are arranged at intervals of 60 degrees. The supply nozzle 52, as shown in FIG. 11, is positioned directly above the gap between the substrate W on each holding member 31 and the upper surface of the stage 30, and faces the gap (for example, about 0.1 mm to 0.5 mm). ) And spit out the softened thermoplastic resin B1, so that the gap between the substrate W on each holding member 31 and the upper surface of the table 30, a part of the outer peripheral area A1a of the substrate W on each holding member 31, and the outer peripheral A part of the upper surface of the table 30 adjacent to the area A1a is covered to supply the softened thermoplastic resin B1. In addition, since the thermoplastic resin B1 in the softened state has a desired viscosity, the thermoplastic resin B1 discharged toward the aforementioned gap gradually expands so as to cover the gap. If the thermoplastic resin B1 is ejected from the supply nozzle 52, it will gradually harden from the surface layer. If it is attached to the table 30, each holding member 31, and the substrate W, the temperature of the thermoplastic resin B1 is sharply increased. When it is lowered, the thermoplastic resin B1 of the part adhering to these places hardens rapidly. When the resin is supplied, since the stage 30 is rotated by the rotating mechanism 40, the substrate W on the stage 30 is also in a rotating state. At this time, since the holding member 31 is supported by the stage 30, there is no relative movement between the substrate W held by the holding member 31 and the stage 30. Therefore, the thermoplastic resin B1 discharged from the supply nozzle 52 sequentially covers the gap between the substrate W on each holding member 31 and the upper surface of the stage 30 in response to the rotation of the substrate W. Attachment is made to a part of the outer peripheral area A1a of the substrate W on each holding member 31 and a part of the upper surface of the stage 30 adjacent to the outer peripheral area A1a. By this, as shown in FIG. 12, the thermoplastic resin B1 is applied to the ring-shaped area of a specific width, and the ring-shaped area of the specific width is covered by the thermoplastic resin B1 (resin coating is completed). The resin-coated substrate W is processed with an etching solution in the processing chamber 20 (details will be described later). (Substrate Processing Process) Next, the flow of the substrate processing process performed by the aforementioned substrate processing apparatus 10 will be described. In this substrate processing process, the control section 80 controls the actions of each section. As shown in FIG. 13, in step S11, the unprocessed substrate W is carried into the processing chamber 20 by a robot and supplied to the stage 30, and the supplied substrate W is transferred by the stage Each holding member 31 of 30 is sandwiched and held. The robot hand is avoided from the processing chamber 20 after the substrate W is supplied. In addition, when the substrate W is carried in, the supply nozzle 52, the peeling hand 61, and each supply nozzle 91 are positioned at the standby position. If the aforementioned robotic hand is avoided from the processing chamber 20, in step S12, the softened thermoplastic resin B1 is applied to the aforementioned specific wide annular region. First, the table 30 starts to rotate by the rotation mechanism 40, and the supply nozzle 52 is moved from the standby position to the supply position by the nozzle moving mechanism 53. If the supply nozzle 52 reaches the supply position, the supply nozzle 52 is positioned directly above the gap between the substrate W on each holding member 31 and the upper surface of the stage 30 (refer to FIG. 11), if it is the number of rotations of the stage 30 When it becomes a specific number of rotations, the softened thermoplastic resin B1 is discharged toward the aforementioned gap. The thermoplastic resin B1 ejected from the supply nozzle 52 is applied to each holding member 31 in order to cover the gap between the substrate W on each holding member 31 and the upper surface of the table 30 in response to the rotation of the substrate W. A part of the outer peripheral area A1a of the substrate W on the holding member 31 and a part of the upper surface of the stage 30 adjacent to the outer peripheral area A1a are attached. And, for example, if the attachment start point of the thermoplastic resin B1 on the substrate W is circled for one round, the thermoplastic resin B1 is applied to a ring-shaped area of a specific width (refer to FIG. 12), the aforementioned specific width The ring-shaped area is covered by thermoplastic resin B1. If this resin coating is completed and the discharge is stopped, the supply nozzle 52 moves from the coating position to the standby position. In addition, the coated thermoplastic resin B1 is in a hardened state due to a decrease in temperature. If the aforementioned supply nozzle 52 returns to the standby position, in step S13, a series of etching processes are executed. First, each supply nozzle 91 is moved from the standby position to the supply position by the nozzle moving mechanism 92. When each supply nozzle 91 reaches the supply position, the processing liquid is sequentially supplied to the vicinity of the center of the processed surface Wa of the rotating substrate W. The supply order of the treatment liquid is the order of the etching liquid, the cleaning liquid, and the ultrapure water. The processing liquid supplied to the vicinity of the center of the processed surface Wa of the substrate W is expanded to the entire processed surface Wa of the substrate W by the centrifugal force caused by the rotation of the substrate W. By this, a liquid film of the processing liquid is formed on the processed surface Wa of the substrate W, and the processed surface Wa of the substrate W is processed by the processing liquid. Initially, the supply of the etching solution is started. If a certain time has elapsed since the start of the supply of the etching solution, the supply of the cleaning solution is started and the supply of the etching solution is stopped. After that, if a specific time has elapsed since the supply of the cleaning liquid was started, the supply of ultrapure water is started, and the supply of the cleaning liquid is stopped. If a specific time has elapsed from the start of the supply of ultrapure water, the supply of ultrapure water is stopped, and each supply nozzle 91 moves from the coating position to the standby position. If the supply of the aforementioned ultrapure water is stopped, in step S14, the drying process is executed. That is, if the supply of ultrapure water is stopped, the rotation number of the table 30 is increased to a specific rotation number (the liquid is thrown off and dried). The number of rotations at this time is greater than the number of rotations in step S12 or S13. If a specific time has elapsed since the supply of ultrapure water was stopped, the table 30 will stop rotating. If the aforementioned supply nozzles 91 reach the standby position and the rotation of the table 30 stops, in step S15, the cured thermoplastic resin B1 is removed from the aforementioned specific wide annular region. First, the peeling hand 61 is moved from the standby position to the peeling start position by the hand moving mechanism 62, and each holding member 31 is raised above the table 30 by the rotating lifting mechanism 32. By this ascent, as shown in FIG. 14, the thermoplastic resin B1 in the hardened state is peeled off from a part of the upper surface of the table 30. If the peeling hand 61 reaches the peeling start position, it will be positioned directly above the outer peripheral surface A1b of the substrate W on the table 30, and then it will be lowered and attached to the upper surface of each holding member 31 or each holding member 31 A part of the hardened thermoplastic resin B1 at a part of the outer peripheral area A1a of the substrate W is pinched. After that, the peeling hand 61 is raised while pinching a part of the cured thermoplastic resin B1, and moves from the peeling start position to the peeling end position, and the cured thermoplastic resin B1 is moved from the peeling end position. The substrate W is peeled off. By this, the thermoplastic resin B1 in the hardened state is removed from the substrate W. If this resin removal is completed, the peeling hand 61 moves from the peeling end position to the recovery position, and if it reaches the recovery position, the cured thermoplastic resin B1 is separated and dropped toward the recovery part 70. The recovery part 70 receives and accommodates the dropped thermoplastic resin B1 in a hardened state. If the peeling hand 61 drops the cured thermoplastic resin B1 at the recovery position, it moves from the recovery position to the standby position. If the aforementioned peeling hand 61 returns to the standby position, in step S16, the substrate W on which resin peeling is completed is carried out from each holding member 31 by the aforementioned robotic hand (not shown) to the processing chamber 20 In addition, it is transported by the transport device in order to proceed to the next process. In this kind of substrate processing process, the softened thermoplastic resin B1 is coated on the specified width by covering the gap between the upper surface of the substrate W on each holding member 31 and the upper surface of the table 30 In the ring area, the specific wide ring area is covered by the thermoplastic resin B1 in a hardened state. The etching liquid supplied to the upper surface of the substrate W is transferred from the upper surface of the substrate W to the upper surface of the stage 30 via the upper surface of the thermoplastic resin B1 due to centrifugal force, and is discharged from the outer periphery of the stage 30. As a result, in the etching process, which is a subsequent process, the thermoplastic resin B1 in the hardened state functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etching solution. Therefore, the erosion of the outer peripheral surface A1b of the substrate W by the etchant is suppressed, and the reduction in the size of the substrate can be suppressed. As a result, it is possible to obtain an element wafer of a desired size even in the outer peripheral portion of the substrate W, so that the occurrence of the loss of the element wafer can be suppressed. In addition, it is possible to carry out the substrate transfer in the subsequent process such as the transfer by the robot in the subsequent process, and the yield can be improved. Furthermore, in the process of removing the thermoplastic resin B1 in the hardened state from the substrate W, before the part of the thermoplastic resin B1 on the substrate W is grasped by the peeling hand 61, the lifting mechanism 32 is used. To raise each holding member 31 holding the substrate W, the hardened thermoplastic resin B1 is peeled off from a part of the upper surface of the table 30. As a result, the peeling hand 61 makes it easy to pinch a part of the thermoplastic resin B1 in the hardened state. Therefore, the work of removing the thermoplastic resin B1 in the hardened state from the substrate W can be facilitated. As described above, according to the second embodiment, the same effect as the first embodiment can be obtained. In addition, by covering the gap between the upper surface of the substrate W on each holding member 31 and the upper surface of the stage 30, the softened thermoplastic resin B1 is applied to the ring-shaped area of a specific width. When the softened thermoplastic resin B1 is directly coated on the outer peripheral surface A1b of the substrate W on the stage 30, various settings and device adjustments related to resin coating can be facilitated. This is because, in the first embodiment, the thermoplastic resin B1 supplied to the upper portion of the outer peripheral surface A1b of the substrate W gradually expands downward so as to cover the outer peripheral surface A1b of the substrate W , To apply the thermoplastic resin B1 to the outer peripheral surface A1b. On the other hand, in the second embodiment, it is only necessary to coat the thermoplastic resin B1 on each of the upper surface of the table 30, the upper surface of the substrate W, and the gap between the two. Therefore. When the softened thermoplastic resin B1 is directly coated on the outer peripheral surface A1b of the substrate W, depending on the viscosity of the thermoplastic resin B1 used, it may be difficult to perform various settings related to the resin coating. Condition of device adjustment. <Third Embodiment> With reference to Figs. 15 to 17, the third embodiment will be described. In addition, in the third embodiment, the differences (the stage and the guide member) between the second embodiment and the second embodiment will be described, and other descriptions will be omitted. As shown in FIG. 15, the substrate processing apparatus 10 of the third embodiment is further provided with a guide member 100 in addition to the sections 20 to 90 of the second embodiment. In addition, the stage 30 of the third embodiment is a stage different from that of the second embodiment in a part. The table 30 is provided with a hollow portion 30b at the center of rotation. In the hollow portion 30b, a plurality of supply nozzles 33 are fixedly arranged. Therefore, each supply nozzle 33 does not rotate together with the table 30. For example, a hollow portion 30b is formed in a cylindrical pillar that is connected to the table 30 and becomes a rotating shaft. These supply nozzles 33 respectively supply processing liquid (for example, ultrapure water) toward the vicinity of the center of the lower surface of the substrate W on the stage 30. With this, the underside of the substrate W can be washed with ultrapure water. The guide member 100 is formed so as to surround the outer peripheral surface A1b of the substrate W in a state in which the substrate W is held by the holding members 31 located at the processing position, for example, It has a circular ring shape and is arranged in a manner of being separated from the upper surface of the stage 30 and positioned above the upper surface of the stage 30 by a plurality of pillars 101 arranged on the upper surface of the stage 30. The pillars 101 are arranged on the same circumference with the center of the ring of the guide member 100 as the center, and are arranged at intervals of 60 degrees. In addition, the height position of the upper surface of the guide member 100 and the height position of the upper surface of the substrate W held by each holding member 31 positioned at the processing position are substantially the same. At the aforementioned guide member 100, as shown in FIG. 16, a plurality of cutout portions 102 are formed corresponding to each holding member 31. That is, each cutout portion 102 corresponds to the ground of each holding member 31, and is arranged at intervals of 60 degrees with the center of the ring of the guide member 100 as the center. 31 is formed in such a way that the holding action and the lifting action cause obstacles. The supply nozzle 52, as shown in FIG. 17, is positioned directly above the gap between the substrate W on each holding member 31 and the upper surface of the guide member 100, and discharges the softened thermoplastic toward the gap. The resin B1 is used to connect the gap between the substrate W on each holding member 31 and the upper surface of the guide member 100, a portion of the outer peripheral area A1a of the substrate W on each holding member 31, and the guide adjacent to the outer peripheral area A1a A part of the upper part of the lead member 100 is covered to supply the thermoplastic resin B1 in a softened state. In addition, since the thermoplastic resin B1 in the softened state has a desired viscosity, the thermoplastic resin B1 discharged toward the aforementioned gap gradually expands so as to cover the gap. If the thermoplastic resin B1 is discharged from the supply nozzle 52, it will gradually harden from the surface. If it adheres to the guide member 100, each holding member 31, and the substrate W, the temperature of the thermoplastic resin B1 is It drops rapidly, and the thermoplastic resin B1 attached to these places hardens rapidly. When the resin is supplied, since the stage 30 is rotated by the rotating mechanism 40, the substrate W on the stage 30 is also rotated, and there is no relative movement between the substrate W and the guide member 100 The state. Therefore, the thermoplastic resin B1 discharged from the supply nozzle 52 is applied to each holding member 31 in order to cover the gap between the substrate W on each holding member 31 and the upper surface of the guide member 100. A part of the outer peripheral area A1a of the substrate W and a part of the upper surface of the guide member 100 adjacent to the outer peripheral area A1a are attached. And, for example, if the attachment start point of the thermoplastic resin B1 at the substrate W surrounds one circle, the thermoplastic resin B1 is applied to the ring-shaped area of a specific width, and the ring-shaped area of the specific width is covered by Covered with thermoplastic resin B1 (resin coating completed). The resin-coated substrate W is processed by etching liquid in the processing chamber 20. In the etching process, the processing liquid (etching liquid, cleaning liquid, and ultrapure water) is supplied as in the second embodiment. However, in the supply of the processing liquid, the processing liquid is supplied to each holding member 31 The entire underside of the substrate W is supplied with ultrapure water from each supply nozzle 33. With this, even during the etching process, the bottom surface of the substrate W can be kept clean. At this time, since the guide member 100 is present, it becomes an ultrapure material that can flow from the bottom surface of the substrate W supplied to each holding member 31 and along the bottom surface of the substrate W toward the outer periphery of the substrate W. The water flows in the space between the guide member 100 and the upper surface of the platform 30 and is discharged to the outside of the platform 30. As described above, according to the third embodiment, the same effect as the second embodiment can be obtained. Moreover, by providing the guide member 100, the gap between the substrate W on each holding member 31 and the upper surface of the guide member 100 and a part of the outer peripheral area A1a of the substrate W on each holding member 31 can be connected to the A part of the upper surface of the guide member 100 adjacent to the outer peripheral area A1a is covered by the thermoplastic resin B1. By this, the outer peripheral surface A1b of the substrate W can be protected from the etching liquid, and the ultrapure water supplied to the lower surface of the substrate W can also be discharged to the outside of the table 30. With this, since ultrapure water can be supplied to the bottom surface of the substrate W, the bottom surface of the substrate W can be maintained clean. <Fourth Embodiment> With reference to Figs. 18 to 20, the fourth embodiment will be described. In addition, in the fourth embodiment, the differences from the first embodiment (the peeling hand 61 and the recovery part 70) will be described, and other descriptions will be omitted. As shown in FIG. 18, the peeling hand 61 of the fourth embodiment is a needle-shaped pin with a sharp tip. The peeling hand 61 is formed of a material with high thermal conductivity, and contains a heating body 62c such as a nickel-chromium alloy wire. This heating body 62c heats the peeling hand 61. The movable arm 62a is formed so that it can be bent in the middle by the rotation mechanism 62d. The rotating mechanism 62d is equipped with a rotating shaft and a motor (neither shown), and functions as a joint for realizing free bending. The peeling hand 61 is connected to the movable arm 62a via the rotation mechanism 62e. The rotation mechanism 62e is provided with a rotation shaft and a motor (both not shown), and functions as a rotation drive part that rotates the peeling hand 61 with the rotation shaft as a rotation center. The heating body 62c and the respective rotating mechanisms 62d and 62e are respectively electrically connected to the control unit 80, and these drive systems are controlled by the control unit 80. As shown in FIG. 19, the recovery part 70 of the fourth embodiment is provided with a main body 71 and a removal part 72. A part of the main body 71 is arranged in the processing chamber 20, and the other part is arranged outside the processing chamber 20. The space inside the processing chamber 20 at the main body 71 is a space for removing the cured thermoplastic resin B1 from the peeling hand 61. The space outside the processing chamber 20 is a space for accommodating the cured state Space for thermoplastic resin B1. The main body 71 is provided with an opening 71a on the upper surface. The opening 71a is formed to a size that allows the peeling hand 61 to enter the main body 71 while maintaining the cured thermoplastic resin B1. The removal portion 72 is provided with a pair of shutter members (an example of removal member) 72a that can be opened and closed. These gate members 72a are provided as covers that close the opening 71a at the upper end of the main body 71 and are arranged to face each other, and are formed so as to be able to move in the direction of approaching each other by the moving mechanism 72b. Move in the direction of separation. The moving mechanism 72b is constituted by an interlocking member, a motor (none of which is shown), etc. The motor is electrically connected to the control unit 80, and its drive system is controlled by the control unit 80. The pair of gate members 72a, as shown in Fig. 20, move to each other and become completely closed. However, even in the completely closed state, it is equipped with a needle-shaped The peeling hand 61 is formed by the through hole H1 through which it passes. That is, in a state where the pair of gate members 72a are completely closed, when the peeling hand 61 holding the thermoplastic resin B1 in a hardened state passes through the through hole H1, it is held by the peeling hand 61 The thermoplastic resin B1 in the hardened state is brought into contact with the pair of shutter members 72a. In the resin peeling process, the peeling hand 61 is heated by the heating body 62c, and the heated peeling hand 61 is lowered from the peeling start position to the contact position. The movement of the peeling hand 61 is the same as in the first embodiment, and is performed by the hand movement mechanism 62 (the same applies hereinafter). The peeling hand 61 is maintained in the state of lying down (slightly horizontal state), and is in contact with a part of the hardened thermoplastic resin B1 on the substrate W, and is heated by the heating body 62c. A part of the thermoplastic resin B1 in the hardened state on the substrate W is softened (melted). After that, in a state where the peeling hand 61 is in contact with a part of the thermoplastic resin B1, the heat caused by the heating body 62c to the peeling hand 61 is stopped, and the thermoplastic resin B1 softened by the heat A part of it was hardened again due to being left to cool down. By this, the peeling hand 61 is bonded to the thermoplastic resin B1, and the peeling hand 61 reliably holds the thermoplastic resin B1. In addition, here, although the thermoplastic resin B1 is not directly heated, it may be configured such that the thermoplastic resin B1 in the area contacted by the peeling hand 61 is preliminarily passed through a heating part such as a point halogen lamp (not shown in the figure). Show) for heating. In this case, it is possible to facilitate the adhesion of the peeling hand 61 to the thermoplastic resin B1 in the hardened state. Next, the peeling hand 61 is raised from the contact position to the peeling start position while holding a part of the thermoplastic resin B1 in the hardened state, and part of the thermoplastic resin B1 in the hardened state is removed from the substrate W peel off. The peeling hand 61 positioned at the peeling start position is rotated by the rotation mechanism 62d with the rotation axis as the center of rotation, and moves along the surface of the substrate W from the peeling start position to the peeling end position, thereby moving The cured thermoplastic resin B1 is taken up and peeled off from the outer peripheral surface A1b of the substrate W (refer to FIG. 18). By this, the thermoplastic resin B1 in the hardened state is peeled from the substrate W. According to this resin peeling process, the thermoplastic resin B1 in the hardened state is wound up by the peeling hand 61 and removed from the substrate W. By this, compared to the case where the peeling hand 61 is moved and the thermoplastic resin B1 is removed without performing the winding caused by the peeling hand 61, it becomes possible to be able to peel off the thermoplastic resin B1. The moving stroke of the moving distance is shortened. Therefore, it is possible to minimize the movement space of the peeling hand 61 in the device. In addition, compared to the case where the peeling hand 61 is moved and the thermoplastic resin B1 is removed without performing the winding by the peeling hand 61, the thermoplastic resin B1 can be integrated into a smaller size and recovered . If the aforementioned resin peeling process is completed, the peeling hand 61 moves from the peeling end position to the recovery standby position directly above the recovery part 70, and reaches the recovery standby position, and then becomes the upright state from the lying state (The state where the front end faces downward in a slightly vertical state). At this time, the shutter members 72a of one of the pair of the removed parts 72 are separated from each other, and there is a size that allows the peeling hand 61 to enter the main body 71 while maintaining the cured thermoplastic resin B1. The peeling hand 61 The tie position is directly above the opening of the pair of gate members 72a. If the peeling hand 61 is lowered a certain distance in the vertical direction from the recovery standby position, the pair of gate members 72a are closed by the moving mechanism 72b, and the gate members 72a are wrapped around the peeling hand 61. Opposite. In a state where the pair of shutter members 72a face each other with the peeling hand 61 sandwiched therebetween, the peeling hand 61 rises while being rotated by the rotation mechanism 62e, and returns to the original recovery standby position. At this time, the cured thermoplastic resin B1 held by the peeling hand 61 is brought into contact with the lower ends of the pair of gate members 72a (refer to FIG. 19), and the pair of gate members 72a It is blocked, and due to the lifting of the peeling hand 61, it gradually moves toward the lower end (front end) of the peeling hand 61, and falls off from the peeling hand 61. The cured thermoplastic resin B1 that has fallen off from the peeling hand 61 falls toward the bottom surface of the main body 71 and is contained in the main body 71. In this resin recovery process, the thermoplastic resin B1 in the hardened state held by the peeling hand 61 is removed by the pair of shutter members 72a in response to the movement of the peeling hand 61. With this, it is possible to remove the thermoplastic resin B1 in the hardened state held by the peeling hand 61 from the peeling hand 61. Therefore, since the recycling operation of removing and recovering the thermoplastic resin B1 from the peeling hand 61 is automated, it is compared with allowing the operator (user) to clean the peeling hand 61 and peel the thermoplastic resin B1 from it. In the case of recycling by hand 61, the production efficiency can be improved, and the contamination of the substrate W can be suppressed. If the operator is used to perform the work, it will be necessary to open the door of the device first and then perform the work. Therefore, the device must be stopped before the work is performed. Therefore, in addition, working time will be consumed, and the production efficiency will be reduced. If the recycling operation is automated, the thermoplastic resin B1 can be applied to other substrates W even while recycling is in progress, so the production efficiency is improved. In addition, in order to remove the thermoplastic resin B1 by the operator's work, it is necessary to open the door of the device first, and then perform the work. However, opening the door of the device causes the gas atmosphere from the outside to enter the device. Therefore, the inside of the device does not maintain a clean atmosphere, and the substrate W may be contaminated. If the recovery operation is automated, it is possible to recover the thermoplastic resin B1 from the peeling hand 61 while keeping the atmosphere in the device clean. As described above, according to the fourth embodiment, the same effect as the first embodiment can be obtained. In addition, the removal portion 72 is provided with a pair of gate members 72a, and these gate members 72a are opposite to each other with the peeling hand 61 sandwiched therebetween, and in response to the movement of the peeling hand 61, and with the peeling hand 61 The thermoplastic resin B1 in the hardened state that has been maintained abuts, and the thermoplastic resin B1 in the hardened state is removed from the peeling hand 61. With this, since the recycling operation of removing and recycling the thermoplastic resin B1 from the peeling hand 61 is automated, the production efficiency can be improved compared to the case where the operator performs the recycling operation. The contamination of the substrate W can be suppressed. In addition, in the resin recovery process, when the peeling hand 61 is moved upward, the peeling hand 61 is rotated, but the system is not limited to this, and it may not be rotated. However, in order to improve the removal efficiency, it is desirable to rotate the peeling hand 61 while moving the peeling hand 61 upward. In addition, although the pair of shutter members 72a are not brought into contact with the peeling hand 61, the system is not limited to this, and it may be brought into contact. However, in order to suppress the damage of the peeling hand 61 or the pair of shutter members 72a and the occurrence of dust caused by the damage, it is preferable that the pair of shutter members 72a and the peeling hand 61 are not brought into contact. <Fifth Embodiment> With reference to Figs. 21 and 22, the fifth embodiment will be described. In addition, in the fifth embodiment, the difference (recovering section 70) from the fourth embodiment will be described, and other descriptions will be omitted. As shown in FIGS. 21 and 22, the main body 71 of the fifth embodiment is provided with an opening 71b on the upper surface. The opening 71b is formed to a size that allows the peeling hand 61 to enter the main body 71 while maintaining the cured thermoplastic resin B1. Moreover, the removal part 70 of 5th Embodiment is equipped with the roller 72c of a plurality of. These rollers 72c are arranged in two rows in the direction in which the peeling hand 61 moves, and the rows are arranged to be separated by a certain distance. In addition, the rollers 72c are formed to be rotated by a rotating mechanism 72d on the inner side of the main body 71 (in the direction of the arrow in FIG. 21) in conjunction with each other. The rotating mechanism 72b is constituted by an interlocking member, a motor (none of which is shown), etc. The motor is electrically connected to the control unit 80, and its drive system is controlled by the control unit 80. The specific distance between the aforementioned rows is set to a distance that enables each roller 72c to contact and sandwich the thermoplastic resin B1 in the hardened state maintained by the peeling hand 61 . Each roller 72c is directed toward the direction in which the thermoplastic resin B1 in the cured state held by the peeling hand 61 moves toward the front end side of the peeling hand 61 (the lower end side in FIG. 21) and is removed from the peeling hand 61 Come to make a spin. In the resin recovery process, the peeling hand 61 moves from the peeling end position to the recovery standby position, reaches the recovery standby position, and becomes a standing state from a lying state. At this time, the peeling hand 61 is in the upright state and the position is directly above the opening 71b of the main body 71, and the rollers 72c of the removing part 72 are started to be hardened from the front end of the peeling hand 61 Rotate the direction in which the thermoplastic resin B1 is removed. Next, the hand 61 is peeled off, while rotating the rotating mechanism 62e, it descends by a predetermined distance in the vertical direction from the recovery standby position. Each roller 72c rotates while sandwiching the thermoplastic resin B1 in the hardened state held by the peeling hand 61, so that the thermoplastic resin B1 in the hardened state is directed downward from the peeling hand 61 move. In addition, if the peeling hand 61 is lowered by a specific distance, the thermoplastic resin B1 in the hardened state is sandwiched by the rollers 72c, and the peeling hand 61 rotates and rises to return to the original state. The recovery standby position. At this time, the thermoplastic resin B1 in the cured state held by the peeling hand 61 moves toward the lower end (front end) of the peeling hand 61 by the rotation of each roller 72c and the lifting of the peeling hand 61, and moves from The peeling hand 61 falls off. The cured thermoplastic resin B1 that has fallen off from the peeling hand 61 falls toward the bottom surface of the main body 71 and is contained in the main body 71. When the peeling hand 61 returns to the original recovery standby position, the rotation of each roller 72c is stopped. In this resin recovery process, the thermoplastic resin B1 in the cured state maintained by the peeling hand 61 is removed by the rollers 72c in response to the rotation of the rollers 72c and the movement of the peeling hands 61. Peel the hand 61 out. By this, the thermoplastic resin B1 in the hardened state held by the peeling hand 61 can be removed from the peeling hand 61 and recovered. Therefore, as in the fourth embodiment, since the recycling operation of removing and recycling the thermoplastic resin B1 from the peeling hand 61 is automated, it is possible to make the production more efficient compared to the case where the operator performs the recycling operation. The efficiency is improved, and the contamination of the substrate W can be suppressed. As explained above, according to the fifth embodiment, the same effect as the fourth embodiment can be obtained. In addition, the removal part 72 is provided with a pair of rotatable rollers 72c, and these rollers 72c sandwich and rotate the thermoplastic resin B1 in the hardened state held by the peeling hand 61. , And the hardened thermoplastic resin B1 is removed from the peeling hand 61. With this, since the recycling operation of removing and recycling the thermoplastic resin B1 from the peeling hand 61 is automated, the production efficiency can be improved compared to the case where the operator performs the recycling operation. The contamination of the substrate W can be suppressed. In addition, as the removal part 72, in addition to the removal by the rollers 72c, for example, instead of the rollers 72c, a clamping hand is provided inside the main body 71, and a gripping hand 61 is wound around the peeling hand 61. The above thermoplastic resin B1 is lowered by the moving mechanism, and the thermoplastic resin B1 is removed from the peeling hand 61. In addition, although it is configured to remove the thermoplastic resin B1 by a roller mechanism or a shutter mechanism, the system is not limited to this. For example, a removing member (such as a plate) that is installed horizontally can also be used. On the side surface, a straight groove into which the peeling hand 61 can be inserted is provided in the vertical direction, and from a direction (for example, a direction orthogonal to) that intersects the extending direction of the groove of the removal member (U-shaped member) ) To get the peeling hand 61 into the groove, and then pull the peeling hand 61 upward toward the extending direction of the groove, so that the thermoplastic resin B1 is hooked on the removing member and removed. The removal member is sandwiched between the peeling hand 61 in the middle, and in response to the movement of the peeling hand 61, it comes into contact with the thermoplastic resin B1 in the hardened state maintained by the peeling hand 61, and will be moved by the peeling hand 61. The thermoplastic resin B1 in the hardened state that has been maintained is removed from the peeling hand 61. In addition, the aforementioned pair of gate members 72a is also an example of removing members. In the resin recovery process, when the cured thermoplastic resin B1 is removed from the peeling hand 61 by the rollers 72c, the peeling hand 61 is moved upward, but the system is not limited to this. It can also be configured to be fixed without moving it. In addition, in the resin recycling process, when the peeling hand 61 is moved upward, the peeling hand 61 is rotated, but the system is not limited to this. When the peeling hand 61 is moved or fixed, it can be Make it rotate, or not make it rotate. However, in order to improve the removal efficiency, it is desirable to rotate the peeling hand 61 while moving the peeling hand 61 upward. <Other Embodiments> In the foregoing description, as the peeling hand 61, although a part of the thermoplastic resin B1 in the cured state is used as a gripper-shaped or tweezer-shaped hand, it is exemplified, but, The system is not limited to this. For example, it can also be configured to use needle-shaped hands (pins), fork-shaped hands, nickel-chromium alloy wires, or lamp tubes, etc. Attraction department. The needle-shaped hand pierces a part of the thermoplastic resin B1 in the hardened state and holds a part of the thermoplastic resin B1. The heating element is formed in a linear, ring, rod shape, etc., and generates heat to melt a part of the thermoplastic resin B1 in a hardened state and adhere to the part to hold a part of the thermoplastic resin B1. The suction part sucks and holds a part of the thermoplastic resin B1 in the hardened state. In addition, in the foregoing description, although the material of the peeling hand 61 is not limited, as the material of the peeling hand 61, when the peeling hand 61 is equipped with a heating mechanism such as a heating body 62c, it can be Use metal or ceramics with thermal conductivity. In addition, in order to make it easier to remove the thermoplastic resin B1 from the peeling hand 61, the surface of the peeling hand 61 may be coated with a material such as fluororesin. In addition, in the foregoing description (refer to the fourth embodiment or the fifth embodiment), the case where the thermoplastic resin B1 in contact with the peeling hand 61 is heated and then left to cool has been exemplified, however, The system is not limited to this. It is also possible to provide a cooling mechanism (for example, a Peltier element) inside the peeling hand 61, and use the cooling mechanism to cool the peeling hand 61 to make contact with the peeling hand 61 The thermoplastic resin B1 is cooled. In addition, in the foregoing description, although the peeling hand 61 holding a part of the thermoplastic resin B1 in the hardened state is moved in one direction and the hardened thermoplastic resin B1 is peeled from the substrate W. It is illustrated, but the system is not limited to this. For example, the system may be configured such that the peeling hand 61 holding a part of the thermoplastic resin B1 in the hardened state is rotated and used as the thermoplastic resin B1 in the hardened state. It is wound up, and the cured thermoplastic resin B1 is peeled from the substrate W (refer to the fourth embodiment or the fifth embodiment). In addition, in the foregoing description, although the case where the thermoplastic resin B1 in the cured state is recovered by the recovery part 70 is exemplified, the system is not limited to this. For example, the system may be configured to recover A heater is installed at the portion 70, and the recovery portion 70 is connected to the groove 51a of the storage unit 51 by piping, and the cured thermoplastic resin B1 is heated and softened by the heater. Then, the softened thermoplastic resin B1 is sent back and forth to the tank 51a through the pipe. In this case, since the thermoplastic resin B1 can be reused, the cost can be suppressed, and the burden on the environment caused by the discarding of the thermoplastic resin B1 can be reduced. inhibition. In addition, it is also possible to perform trial discharge before the discharge operation at the supply position so that the thermoplastic resin B1 is appropriately discharged from the supply nozzle 52. For example, when the supply nozzle 52 is positioned at the supply position, the thermoplastic resin B1 is discharged from the supply nozzle 52 at the standby position in advance (discharged in advance). The thermoplastic resin B1 discharged from the supply nozzle 52 is configured to be received by a retainer provided below the supply nozzle 52. It may be configured to position the supply nozzle 52 above the recovery part 70 and discharge it in advance. In the above-mentioned configuration for reusing the thermoplastic resin B1, the supply nozzle 52 may be positioned above the recovery part 70 during standby and the thermoplastic resin B1 can be continuously discharged continuously. In addition, when peeling off the cured thermoplastic resin B1 using the peeling hand 61, the system may also be configured to blow additional thermal fluid to the cured thermoplastic resin B1 and melt a part of the thermoplastic resin B1. Squeeze in the state. In addition, if it is desired to improve the releasability of the peeling hand 61, a warm air heater for heating the thermoplastic resin B1 held by the peeling hand 61 positioned at the recovery part 70 or the peeling hand 61 can also be installed. And other heating components. In addition, the application of the thermoplastic resin B1 by the supply nozzle 52 may be configured to be performed while moving the supply nozzle 52 in the direction of the rotation radius of the table 30, for example. In addition, in the supply of the thermoplastic resin B1, it is sufficient to move the substrate W on the stage 30 and the supply nozzle 52 relative to each other. For example, it may be configured such that the rotation of the stage 30 is not performed but relative to the stage 30. The outer peripheral end A1 of the upper substrate W moves the supply nozzle 52 to supply the thermoplastic resin B1. As a mechanism for relatively moving the substrate W and the supply nozzle 52, in addition to the moving mechanism 40 that rotates the stage 30, for example, the supply rotating mechanism 52 may be used along a ring or along a ring such as a circular ring or a rectangular ring. A moving mechanism that moves in a straight line (for example, a guide member that supports the supply nozzle 52 and is capable of sliding in a curved or linear manner, a motor that is a driving source of the sliding movement, etc.). In addition, although it is configured to make a loop around the attachment start point of the thermoplastic resin B1 at the substrate W, the ejection of the thermoplastic resin B1 from the supply nozzle 52 is stopped, but it can also be configured In order to discharge the thermoplastic resin B1 from the supply nozzle 52, the adhesion start point is moved two or more times before stopping. In particular, when coating is performed at the outer peripheral area A1a of the substrate W which is orthogonal to the direction of gravity, as in the embodiment shown in FIG. . This is because, compared with the case of coating in one turn, in order to obtain the same coating width and the same film thickness of the thermoplastic resin B1, the discharge amount per unit time from the supply nozzle 52 can be achieved Reduce. Therefore, it is possible to easily control the width and thickness of the thermoplastic resin B1 applied to the substrate W, the stage 30, or the guide member 100. Furthermore, in this case, the supply nozzle 52 may be shifted in the radial direction of the substrate every time it turns. Although several embodiments of the present invention have been described above, these embodiments are merely presented as examples, and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments or their modifications are also included in the scope or gist of the invention, and are also included in the invention described in the scope of the patent application and its equivalent scope.

10:基板處理裝置 30:台 31:保持構件 51a1:加熱器 52:供給噴嘴 52a:加熱器 60:剝離部 61:剝離手 70:回收部 72:去除部 72a:閘門構件 72c:輥 100:導引構件 A1:基板之外周端部 A1a:基板之上面之外周區域 A1b:基板之外周面 B1:熱可塑性樹脂 W:基板10: Substrate processing equipment 30: Taiwan 31: Holding member 51a1: heater 52: Supply nozzle 52a: heater 60: Stripping part 61: Stripped Hands 70: Recycling Department 72: Removal part 72a: Gate component 72c: Roll 100: Guiding member A1: The outer peripheral edge of the substrate A1a: The outer peripheral area on the top of the substrate A1b: The outer peripheral surface of the substrate B1: Thermoplastic resin W: substrate

[圖1]係為對於第1實施形態的基板處理裝置之概略構成作展示之圖。 [圖2]係為用以對於第1實施形態之樹脂塗布的第1例作說明之圖。 [圖3]係為對於藉由第1實施形態之樹脂塗布的第1例而被塗布有樹脂的基板作展示之平面圖。 [圖4]係為對於第1實施形態的基板處理工程之流程作展示之流程圖。 [圖5]係為用以對於第1實施形態之樹脂塗布的第2例作說明之圖。 [圖6]係為對於藉由第1實施形態之樹脂塗布的第2例而被塗布有樹脂的基板作展示之平面圖。 [圖7]係為用以對於第1實施形態之樹脂塗布的第3例作說明之圖。 [圖8]係為用以對於第1實施形態之樹脂塗布的第4例作說明之圖。 [圖9]係為對於第2實施形態的基板處理裝置之概略構成作展示之圖。 [圖10]係為對於第2實施形態之旋轉升降機構作展示之圖。 [圖11]係為用以對於第2實施形態之樹脂塗布的其中一例作說明之圖。 [圖12]係為對於藉由第2實施形態之樹脂塗布的其中一例而被塗布有樹脂的基板以及台作展示之平面圖。 [圖13]係為對於第2實施形態的基板處理工程之流程作展示之流程圖。 [圖14]係為用以對於第2實施形態之樹脂剝離動作的一部分作說明之圖。 [圖15]係為對於第3實施形態的基板處理裝置之一部分作展示之圖。 [圖16]係為對於第3實施形態的導引構件作展示之平面圖。 [圖17]係為用以對於第3實施形態之樹脂塗布的其中一例作說明之圖。 [圖18]係為用以對於第4實施形態之樹脂塗布的其中一例作說明之圖。 [圖19]係為對於第4實施形態的回收部之概略構成作展示之圖。 [圖20]係為對於第4實施形態的回收部之概略構成作展示之平面圖。 [圖21]係為對於第5實施形態的回收部之概略構成作展示之圖。 [圖22]係為對於第5實施形態的回收部之概略構成作展示之平面圖。[Fig. 1] is a diagram showing the schematic configuration of the substrate processing apparatus of the first embodiment. Fig. 2 is a diagram for explaining the first example of resin coating of the first embodiment. Fig. 3 is a plan view showing a substrate coated with resin by the first example of resin coating of the first embodiment. [Fig. 4] is a flowchart showing the flow of the substrate processing process of the first embodiment. Fig. 5 is a diagram for explaining a second example of resin coating in the first embodiment. Fig. 6 is a plan view showing a substrate coated with resin by the second example of resin coating of the first embodiment. Fig. 7 is a diagram for explaining a third example of resin coating in the first embodiment. Fig. 8 is a diagram for explaining a fourth example of resin coating in the first embodiment. Fig. 9 is a diagram showing the schematic configuration of the substrate processing apparatus of the second embodiment. [Fig. 10] is a diagram showing the rotary lifting mechanism of the second embodiment. Fig. 11 is a diagram for explaining one example of resin coating in the second embodiment. Fig. 12 is a plan view showing a substrate and stage coated with resin by one example of resin coating of the second embodiment. [Fig. 13] is a flowchart showing the flow of the substrate processing process of the second embodiment. Fig. 14 is a diagram for explaining a part of the resin peeling operation of the second embodiment. [Fig. 15] is a diagram showing a part of the substrate processing apparatus of the third embodiment. [Fig. 16] is a plan view showing the guide member of the third embodiment. Fig. 17 is a diagram for explaining one example of resin coating in the third embodiment. Fig. 18 is a diagram for explaining one example of resin coating in the fourth embodiment. [Fig. 19] is a diagram showing the schematic configuration of the recovery section of the fourth embodiment. [Fig. 20] is a plan view showing the schematic configuration of the recovery section of the fourth embodiment. [Fig. 21] is a diagram showing the schematic configuration of the recovery section of the fifth embodiment. [Fig. 22] is a plan view showing the schematic configuration of the recovery section of the fifth embodiment.

10:基板處理裝置 10: Substrate processing equipment

20:處理室 20: Processing room

21:清淨單元 21: Cleaning unit

30:台 30: Taiwan

40:旋轉機構 40: Rotating mechanism

50:樹脂供給部 50: Resin Supply Department

51:儲存單元 51: storage unit

51a:槽 51a: Slot

51a1:加熱器 51a1: heater

51a2:供給管 51a2: supply pipe

51b:開閉閥 51b: On-off valve

51c:幫浦 51c: pump

52:供給噴嘴 52: Supply nozzle

52a:加熱器 52a: heater

53:噴嘴移動機構 53: Nozzle moving mechanism

53a:可動臂 53a: movable arm

53b:臂移動機構 53b: Arm moving mechanism

60:剝離部 60: Stripping part

61:剝離手 61: Stripped Hands

62:手移動機構 62: Hand movement mechanism

62a:可動臂 62a: movable arm

62b:臂移動機構 62b: Arm moving mechanism

70:回收部 70: Recycling Department

80:控制部 80: Control Department

A1:基板之外周端部 A1: The outer peripheral edge of the substrate

W:基板 W: substrate

Wa:被處理面 Wa: processed surface

Claims (16)

一種基板處理裝置，係具備有：台，係支持成為蝕刻對象之基板；和加熱部，係使熱可塑性樹脂軟化；和供給噴嘴，係相對於藉由前述台而被作支持的前述基板，而進行相對移動，並在與藉由前述台而被作支持之前述基板之身為並非為蝕刻處理之對象的非蝕刻對象區域之外周端部之正上方相對向的狀態下，將藉由前述加熱部而軟化了的前述熱可塑性樹脂，僅供給至藉由前述台而被作支持的前述基板之身為並非為蝕刻處理之對象的非蝕刻對象區域之外周端部處。 A substrate processing apparatus is provided with: a table for supporting a substrate to be etched; and a heating part for softening a thermoplastic resin; and a supply nozzle for the substrate supported by the table, and Perform relative movement, and in a state facing directly above the outer peripheral end of the non-etching target area of the substrate supported by the stage that is not the target of the etching process, the heating will be performed The softened thermoplastic resin is only supplied to the outer peripheral end of the non-etching target area that is not the target of the etching process of the substrate supported by the table. 如請求項1所記載之基板處理裝置，其中，前述供給噴嘴，係對於藉由前述台而被作支持的前述基板之外周面、以及藉由前述台而被作支持的前述基板之上面的外周區域，此些之其中一方或者是雙方，而供給前述熱可塑性樹脂。 The substrate processing apparatus according to claim 1, wherein the supply nozzle is for the outer periphery of the substrate supported by the stage and the outer periphery of the upper surface of the substrate supported by the stage In the area, one or both of these are supplied with the aforementioned thermoplastic resin. 如請求項1所記載之基板處理裝置，其中，前述台，係具備有在前述台之上面側處而保持前述基板之複數之保持構件，並以將藉由前述複數之保持構件而被作保持的前述基板之外周面作包圍的方式而被形成，前述供給噴嘴，係以將藉由前述複數之保持構件而被作保持的前述基板之上面之外周區域和與該外周區域相鄰 之前述台之上面以及藉由前述複數之保持構件而被作保持的前述基板之上面與前述台之上面之間之間隙作覆蓋的方式，而供給前述熱可塑性樹脂。 The substrate processing apparatus according to claim 1, wherein the table is provided with a plurality of holding members that hold the substrate at the upper surface side of the table, and is held by the plurality of holding members The outer peripheral surface of the substrate is formed to surround the outer peripheral surface of the substrate, and the supply nozzle is formed so that the outer peripheral area of the upper surface of the substrate held by the plurality of holding members is adjacent to the outer peripheral area The upper surface of the table and the gap between the upper surface of the substrate held by the plurality of holding members and the upper surface of the table are covered to supply the thermoplastic resin. 如請求項1所記載之基板處理裝置，其中，前述台，係具備有在前述台之上面側處而保持前述基板之複數之保持構件、和以將藉由前述複數之保持構件而被作保持的前述基板之外周面作包圍的方式而被形成之導引構件，前述供給噴嘴，係以將藉由前述複數之保持構件而被作保持的前述基板之上面之外周區域和與該外周區域相鄰之前述導引構件之上面以及藉由前述複數之保持構件而被作保持的前述基板之上面與前述導引構件之上面之間之間隙作覆蓋的方式，而供給前述熱可塑性樹脂。 The substrate processing apparatus according to claim 1, wherein the table is provided with a plurality of holding members for holding the substrate at the upper surface side of the table, and is to be held by the plurality of holding members The guide member is formed so as to surround the outer peripheral surface of the substrate, and the supply nozzle is used to connect the outer peripheral area of the upper surface of the substrate held by the plurality of holding members to the outer peripheral area The upper surface of the adjacent guide member and the gap between the upper surface of the substrate held by the plurality of holding members and the upper surface of the guide member are covered to supply the thermoplastic resin. 如請求項1所記載之基板處理裝置，其中，前述供給噴嘴，係在對於前述基板之前述外周端部而供給前述熱可塑性樹脂之前，進行將前述熱可塑性樹脂吐出之事先吐出。 The substrate processing apparatus according to claim 1, wherein the supply nozzle discharges the thermoplastic resin in advance before supplying the thermoplastic resin to the outer peripheral end of the substrate. 如請求項1~請求項5中之任一項所記載之基板處理裝置，其中，係具備有：剝離部，係將被供給至前述基板處並硬化了的前述熱可塑性樹脂從前述基板而剝離。 The substrate processing apparatus according to any one of claim 1 to claim 5, which is provided with: a peeling portion for peeling the thermoplastic resin supplied to the substrate and hardened from the substrate . 如請求項6所記載之基板處理裝置，其 中，前述剝離部，係具備有抓捏被供給至前述基板處並硬化了的前述熱可塑性樹脂之手。 The substrate processing apparatus described in claim 6, which Here, the peeling part is provided with a hand that grasps the thermoplastic resin supplied to the substrate and hardened. 如請求項6所記載之基板處理裝置，其中，前述剝離部，係具備有加熱被供給至前述基板處並硬化了的前述熱可塑性樹脂之發熱體。 The substrate processing apparatus according to claim 6, wherein the peeling part is provided with a heating element that heats the thermoplastic resin that is supplied to the substrate and hardened. 如請求項6所記載之基板處理裝置，其中，前述剝離部，係具備有吸引被供給至前述基板處並硬化了的前述熱可塑性樹脂之吸引部。 The substrate processing apparatus according to claim 6, wherein the peeling part is provided with a suction part that sucks the thermoplastic resin supplied to the substrate and hardened. 如請求項6所記載之基板處理裝置，其中，係具備有：回收部，係將藉由前述剝離部而從前述基板所剝離了的前述熱可塑性樹脂作回收。 The substrate processing apparatus according to claim 6, further comprising: a recovery section for recovering the thermoplastic resin peeled from the substrate by the peeling section. 如請求項10所記載之基板處理裝置，其中，前述剝離部，係將剝離了的前述熱可塑性樹脂作保持，前述回收部，係具備有將藉由前述剝離部而被作保持的前述熱可塑性樹脂從前述剝離部而去除之去除部。 The substrate processing apparatus according to claim 10, wherein the peeling portion is to retain the peeled thermoplastic resin, and the recovery portion is provided with the thermoplastic to be retained by the peeling portion Removal part where the resin is removed from the aforementioned peeling part. 如請求項11所記載之基板處理裝置，其中，前述去除部，係具備有去除構件， 前述去除構件，係包夾著前述剝離部地而因應於前述剝離部之移動來與藉由前述剝離部而被作保持的前述熱可塑性樹脂作抵接並將藉由前述剝離部而被作保持的前述熱可塑性樹脂從前述剝離部而去除。 The substrate processing apparatus according to claim 11, wherein the removing section is provided with a removing member, The removal member is sandwiched between the peeling portion, and in response to the movement of the peeling portion, comes into contact with the thermoplastic resin held by the peeling portion and is held by the peeling portion The said thermoplastic resin is removed from the said peeling part. 如請求項11所記載之基板處理裝置，其中，前述去除部，係具備有可旋轉之一對之輥，前述一對之輥，係將藉由前述剝離部而被作保持的前述熱可塑性樹脂夾入並進行旋轉，而將藉由前述剝離部而被作保持的前述熱可塑性樹脂從前述剝離部而去除。 The substrate processing apparatus according to claim 11, wherein the removal part is provided with a rotatable pair of rollers, and the pair of rollers is the thermoplastic resin to be held by the peeling part By sandwiching and rotating, the thermoplastic resin held by the peeling part is removed from the peeling part. 一種基板處理方法，係具備有：藉由台而支持成為蝕刻對象之基板之工程；和藉由加熱部而使熱可塑性樹脂軟化之工程；和相對於藉由前述台而被作支持的前述基板，而使供給噴嘴以會與藉由前述台而被作支持之前述基板之身為並非為蝕刻處理之對象的非蝕刻對象區域之外周端部之正上方相對向的方式來進行相對移動，並藉由前述供給噴嘴來將藉由前述加熱部而軟化了的前述熱可塑性樹脂僅供給至藉由前述台而被作支持的前述基板之身為並非為蝕刻處理之對象的非蝕刻對象區域之外周端部處之工程。 A substrate processing method is provided with: a process of supporting a substrate to be etched by a stage; a process of softening a thermoplastic resin by a heating part; and a process of supporting the substrate by the stage , And the supply nozzle is relatively moved so as to be opposed to directly above the outer peripheral end of the non-etching target area that is not the target of the etching process of the substrate supported by the table, and By the supply nozzle, the thermoplastic resin softened by the heating part is supplied only to the outer periphery of the non-etching target area that is not the target of the etching process of the substrate supported by the table Engineering at the end. 如請求項14所記載之基板處理方法，其中，係具備有將被供給至前述基板處並硬化了的前述熱可塑性樹脂藉由剝離部來從前述基板而剝離之工程。 The substrate processing method according to claim 14, wherein the thermoplastic resin supplied to the substrate and hardened is peeled from the substrate by a peeling portion. 如請求項15所記載之基板處理方法，其中，係具備有將藉由前述剝離部而從前述基板所剝離了的前述熱可塑性樹脂藉由回收部來作回收之工程。 The substrate processing method according to claim 15, wherein the thermoplastic resin peeled from the substrate by the peeling portion is provided with a process for recovering the thermoplastic resin peeled from the substrate by the peeling portion.
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