TWI695291B - Electronic equipment - Google Patents

Abstract

The present invention provides an electronic device including a display unit, a light detection device, a main circuit board, a processor, and a storage medium; a display unit, a light detection device, and a main circuit board are arranged from top to bottom; the main The circuit board is provided with a universal integrated circuit card slot, and the universal integrated circuit card slot is provided with a universal integrated circuit card. By storing the user's physiological characteristic information in the UICC card, the present invention does not need to be verified by the cloud server during the identification and authentication process, but the processor obtains the default identification information in the UICC card and stores it Compare with the identity message to be authenticated to realize the identity recognition and authentication process.

Description

Electronic equipment

The invention relates to the field of safety certification, in particular to an electronic device.

Universal Integrated Circuit Card (UICC) is a general term for smart cards with physical characteristics. If it is used in a terminal device of a broadband mobile network, the UICC can be used as a removable smart card in the terminal for storing user information, authentication keys (including public keys and keys), payment methods, and other information. The ISO/IEC International Standardization Organization has formulated a series of smart card security feature agreements to ensure the secure access of UICC files to terminal devices of broadband mobile network users. UICC introduces the concept of multiple application platforms, and implements a multi-channel mechanism in which multiple logical applications run simultaneously. The UICC can include various logic modules, such as a Subscriber Identity Module (SIM), a Universal Subscriber Identity Module (USIM), and an IP Multimedia Service Identity module (IP Multimedia Service Identity Module, ISIM) and other non-telecommunication application modules such as electronic signature authentication and electronic wallet. The logic modules in the UICC can exist alone or multiple at the same time.

Although UICC has been used in terminal devices related to electronic signature authentication, electronic wallets, and other user privacy-related application modules, and the ISO/IEC International Standardization Organization’s security feature agreement guarantees the terminal device’s secure access to UICC files, but It is not applicable to the identification of mobile terminals that have become increasingly popular. For example, fingerprint recognition, face recognition, etc., the current method is still relying on the sensing device and application program configured on the terminal. It is known that this type of recognition function is mainly for unlocking the terminal device, or relatively considering message security. The unlocking function is implemented on the application of the application. The application or the hardware recognition processor with the recognition function is only the identification image (such as the fingerprint message) that the user presses and enters, through the software or hardware configured by the terminal device and the original storage The image on the terminal (pre-set fingerprint image) is compared, and it is not bound together with the encryption function of UICC.

However, in applications such as financial payment and physiological health monitoring with high information security, increasingly strict identity authentication and message encryption have become the trend. Especially for such applications that require extreme information security, cloud servers are usually used. As a back-end computing processing platform. In order to ensure that the terminal device sending the physiological characteristic message is a registered terminal device, the server for cloud computing generally performs security verification on the legality of the terminal device. For example, in an application for financial transactions, after a user sends an authentication request to the financial transaction cloud platform, the cloud platform usually sends a security verification code to the same terminal device or a different terminal device, prompting the user to enter the verification code to Improve the security of financial transactions. Even so, this cloud verification platform still cannot improve that the user who operates the terminal device is the person who legally registered the user, that is, although the verification of the legitimacy of the terminal device is realized, it is impossible to identify whether the terminal device is used. The head of the household (ie, a legal user) still has a large security risk.

To this end, it is necessary to provide an electronic device to solve the problem that the current cloud server cannot authenticate the user operating the terminal device, resulting in hidden safety hazards in the message verification process.

To achieve the above object, the inventor provides an electronic device including a display unit, a light detection device, a main circuit board, a processor and a storage medium; the display unit, the light detection device and the main circuit board are top-down The light detection device is connected to the processor, the display unit is provided with an identification area, the light detection device is provided below the identification area; the main circuit board is provided with a universal body A circuit card card slot, the universal integrated circuit card slot is provided with a universal integrated circuit card; an executable computer program is stored in the storage medium, and when the computer program is executed by the processor, the following steps are realized: receiving light Detecting the preset identification information collected by the detection device, and writing the preset identification information to the general integrated circuit card; receiving the identity authentication request and the identity information to be authenticated collected by the light detection device, from the general purpose The integrated circuit card obtains the preset identity recognition message, and compares the identity message to be authenticated with the corresponding preset identity recognition message. If the matching succeeds, the identity authentication succeeds, otherwise the authentication fails.

In an embodiment of the present invention, the light detection device includes MxN pixel detection areas, and each pixel detection area is correspondingly provided with more than one thin film transistor to form a group of pixel thin film circuits for scanning driving and data transmission. And a light detection film; the light detection film includes an array formed by photosensitive diodes or photosensitive transistors.

In an embodiment of the present invention, the light detection film is an array formed by photosensitive diodes, and the array formed by the photosensitive diodes includes a photosensitive diode sensing area, the photosensitive diode sensing The region includes a photodiode layer including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, and the p-type semiconductor layer, i-type semiconductor layer, and n-type semiconductor layer are stacked from top to bottom, The i-type semiconductor layer is a microcrystalline silicon structure or an amorphous germanium silicide structure.

In an embodiment of the present invention, the light detection film is an array formed by photosensitive transistors, and the array formed by the photosensitive transistors includes a photosensitive transistor sensing area, and the photosensitive transistor sensing area is provided with a photosensitive Thin film transistor, the photosensitive thin film transistor includes a gate electrode, a source electrode, a drain electrode, an insulating layer, and a light-absorbing semiconductor layer; the photosensitive thin film transistor is an inverted coplanar structure, and the inverted coplanar structure includes: The gate electrode, the insulating layer, and the source electrode are longitudinally arranged from bottom to top, and the drain electrode and the source electrode are laterally coplanar; the insulating layer wraps the gate electrode, so that the gate electrode and the source electrode, and the gate electrode There is no contact between the drain electrodes; there is a gap between the source electrode and the drain electrode, a photosensitive current channel is formed between the source electrode and the drain electrode laterally, and the light-absorbing semiconductor layer is disposed in the photosensitive current channel.

In an embodiment of the present invention, the identity recognition area includes a plurality of identity recognition sub-areas, and a light detection device is correspondingly disposed under each identity recognition sub-area; the electronic device further includes a light detection device control circuit. The light detection device control circuit is connected to the light detection device under each identity recognition sub-region; the light detection device control circuit is used to control the light detection device when receiving a start signal for a light detection device Turn on, or used to control a light detection device to turn off when it receives a signal to turn off the light detection device.

In an embodiment of the present invention, when the computer program is executed by the processor, the following steps are further implemented: an encrypted hash function is used to convert the default identification message into a summary of the default identification message, and the predetermined identification message It is stored in the universal integrated circuit card in the form of a summary of the preset identification message.

In an embodiment of the present invention, when the computer program is executed by the processor, the following steps are realized: when the electronic device collects the preset identification information, the array pixels on the display unit are combined to illuminate the identity to be collected Identify the part of the body where the message is located, and the light detection device receives the reflected light signal to obtain the identification message. During the collection of the preset identification information, the computer program can cooperatively encode the array pixel groups on the display unit to illuminate the body part with the encrypted combined light source and collect multiple encrypted light of the preset identification information Message; or the computer program does not encode the array pixel group cooperative hash function on the display unit, and after the multiple preset identification messages collected by the light detection device, the computer program will use the encrypted hash function to convert multiple preset identities The identification information is converted into a summary of the default identification information; the default identification information includes face information, fingerprint information, iris information, and blood volume information.

In an embodiment of the present invention, when the computer program is executed by the processor, the following steps are further implemented: the authentication key is stored in the integrated circuit card, and the authentication key includes a public key and a private key ; Obtain the public key in the universal integrated circuit card, and use the RSA encryption algorithm to apply the public key to encrypt the digest of the preset ID message to obtain the preset encrypted message, which includes the encrypted preset Digest of the identity recognition message; after receiving the identity message to be authenticated, use the encrypted hash function to convert the identity message to be authenticated into the digest of the identity message to be authenticated; and use the RSA encryption algorithm to encrypt the digest of the authenticated identity message using the public key, Obtain the encrypted message to be authenticated, the encrypted message to be authenticated includes the digest of the encrypted identity message to be authenticated; obtain the private key in the universal integrated circuit card, and use the RSA encryption algorithm to decrypt the preset encrypted message using the private key To obtain a summary of the preset identity recognition message, and compare the summary of the preset identity recognition message with the digest of the identity message to be authenticated. If the match is successful, the identity authentication succeeds, otherwise the authentication fails.

In an embodiment of the present invention, when the computer program is executed by the processor, the following steps are further implemented: after receiving the preset identification message, a first random number string and a first randomly filled blank are randomly generated, the first Randomly filled blanks are randomly generated characters that are filled in the digest of the default identity recognition message; the preset encrypted message also includes an encrypted first random number string and a first randomly filled blank; after receiving the identity message to be authenticated , Randomly generate a second random number string and a second random padding blank, the second random padding blank is randomly generated characters filled in the identity message digest to be authenticated; obtain the private key in the universal integrated circuit card, Use the RSA encryption algorithm to decrypt the preset encrypted message with the private key to obtain the first random number string and the first random padding blank; compare the first random number string with the second random digital string and the first random padding Whether the blank matches the second random filled blank successfully, if yes, the identity authentication succeeds, otherwise the authentication fails.

In an embodiment of the present invention, when the computer program is executed by the processor, the following steps are further implemented: receiving an encryption level setting instruction, setting an encryption level of an electronic device, the encryption level including a first encryption level and a second encryption level And the third encryption level; when the electronic device is at the first encryption level, the conditions for judging the successful identity authentication are the default digest of the identification message and the digest of the identity message to be authenticated, the first random number string and the second random number string, Both the first random filled blank and the second random filled blank match successfully; when the electronic device is at the second encryption level, the condition for judging successful identity authentication is that the preset digest of the identity identification message and the digest of the identity message to be authenticated match successfully , And any one of the first random number string and the second random number string, the first random padding blank and the second random padding blank are matched successfully; when the electronic device is at the third encryption level, the identity authentication is judged The condition for success is a successful match between the digest of the default identification message and the digest of the identity message to be authenticated.

Different from the prior art, the electronic equipment of the above technical solution includes a display unit, a light detection device, a main circuit board, a processor, and a storage medium; the display unit, the light detection device, and the main circuit board are arranged from top to bottom; The light detection device is connected to the processor, the display unit is provided with an identification area, the light detection device is provided below the identification area; the main circuit board is provided with a universal integrated circuit card slot, The universal integrated circuit card slot is provided with a universal integrated circuit card; an executable computer program is stored in the storage medium, and when the computer program is executed by the processor, the following steps are implemented: The default identity identification message, and write the preset identity identification message into the universal integrated circuit card; receiving the identity authentication request and the identity information to be authenticated collected by the light detection device, from the universal integrated circuit card Obtain the preset identity recognition message, and compare the identity message to be authenticated with the corresponding preset identity recognition message. If the match is successful, the identity authentication succeeds, otherwise the authentication fails. By storing the user's physiological characteristic information in the UICC card, the present invention does not need to be verified by the cloud server during the identification and authentication process, but the processor obtains the default identification information in the UICC card and stores it Compare with the identity message to be authenticated to realize the identity recognition and authentication process. Because the identity information is collected and authenticated in real time, it can ensure that the verification operator of the device is the legally registered user himself, which effectively improves the security of the authentication process.

In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following detailed description will be given in conjunction with specific embodiments and accompanying drawings.

Please refer to FIG. 1, which is a schematic diagram of an electronic device according to an embodiment of the present invention. The electronic device is a device with a touch display screen, such as a smart mobile device such as a mobile phone, a tablet computer, a personal digital assistant, or a personal computer. Electronic equipment such as computers for industrial equipment. The electronic device includes a display unit 102, a light detection device 104, a main circuit board 106, a processor, and a storage medium; a display unit 102, a light detection device 104, and a main circuit board 106 are arranged from top to bottom; the light detection The measuring device 104 is connected to the processor, the display unit 102 is provided with an identification area, the light detection device 104 is provided below the identification area; the main circuit board 106 is provided with a universal integrated circuit card In the slot 107, the universal integrated circuit card slot 107 is provided with a universal integrated circuit card 108.

In some embodiments, the display unit 102 is an active array thin film transistor as a display screen for scanning driving and transmitting data. The display screen includes an AMOLED display screen or a micro light-emitting diode display screen. The light transmittance of the display screen is greater than 3%, so that in the process of realizing the light detection function, the luminous flux of the light passing through the display screen is large enough to be received by the light detection device disposed under the display screen, thereby realizing the light detection function . In other embodiments, a touch screen or cover glass 101 is also provided above the display unit 102, so as to meet the needs of different terminal products.

The lower end surface of the display unit 102 and the upper end surface of the light detection device 104 may be bonded via a low-refractive index adhesive 103, and the refractive index of the low-refractive index adhesive is less than 1.4. On the one hand, the low-refractive index adhesive can play an adhesive role, so that the light detection film is fastened to the bottom surface of the display unit, and it is not easy to send off; When the film is thin, due to the refraction effect of the low-refractive index adhesive (the refractive index of the adhesive is lower than the refractive index of the part on the light detection film that contacts it, under normal circumstances, the refraction of the part of the light detection film that contacts the low refractive index adhesive (The rate is above 1.4), so that after the light is refracted at the position of the low refractive index glue, it can enter the light detection film in the vertical direction as much as possible, which can effectively improve the photoelectric conversion rate. In this embodiment, the low refractive index glue is an organic compound glue material having a carbon-fluorine bond.

The processor is an electronic component with a data processing function, such as a central processing unit (Central Processing Unit, CPU for short), a digital signal processor (Digital Signal Processor, DSP for short), or a system on chip (SoC for short). The storage medium is an electronic component with a data storage function, including but not limited to: RAM, ROM, magnetic disk, magnetic tape, optical disk, flash memory, U disk, removable hard disk, memory card, memory stick, etc.

An executable computer program is stored in the storage medium, and when the computer program is executed by the processor, the following steps are realized: receiving the preset identification information collected by the light detection device, and writing the preset identification information Universal integrated circuit card; receiving the identity authentication request and the identity information to be authenticated collected by the light detection device, obtaining the preset identity recognition information from the universal integrated circuit card, and comparing the identity information to be authenticated with the corresponding preset The identification information is compared, if the match is successful, the identity authentication is successful, otherwise the authentication fails. In this embodiment, the preset identification information includes face information, fingerprint information, iris information, and blood volume information.

Since the preset identification information is pre-stored in the universal integrated circuit card (hereinafter referred to as the UICC card), the processor can obtain the preset identification information in the UICC card and compare it with the identity information to be authenticated, Realize the process of identification and authentication. Because the identity information is collected and authenticated in real time, it can ensure that the verification operator of the device is the legally registered user himself. Compared with the authentication method on the cloud server, the security of the authentication process is effectively improved.

Taking the preset identification information as the blood volume information as an example, when light passes through the human skin and enters other tissues below the body surface, some light will be absorbed, and some light will be reflected, scattered, etc. The change of the light path depends on The structure of the tissue below the skin. In general, human blood can absorb more light than the surrounding tissue, so when the light signal encounters more blood, the less light signal is reflected back. Therefore, the blood volume information corresponding to the user can be obtained by detecting the light signal information reflected by the body part, and according to the blood volume information corresponding to the user, other preset identification information of the user (such as blood pressure index) can be obtained by conversion , Body fat content, blood oxygen saturation, cardiopulmonary index, electrocardiogram, etc.).

In some embodiments, the light detection device 104 and the main circuit board 106 are connected via a flexible circuit board 105, and the flexible circuit board 105 includes a chip with an image signal reading and recognition function. The chip with the identification function includes a fingerprint image reading chip, a fingerprint identification algorithm chip, etc. The chip model is such as the ADAS1256 chip of Analog Devices. Flexible circuit boards are also called flexible circuit boards and flexible circuit boards. Referred to as the flexible board or FPC, it is compared with the ordinary hard resin circuit board. The flexible circuit board has the advantages of high wiring density, light weight, thin thickness, less wiring space restrictions, and high flexibility. The arrangement of the flexible circuit board can make the whole light detection device thinner and lighter to meet the market demand.

In order to enhance the security of the preset identification message in the UICC card and save the storage space of the preset identification message in the UICC card, in some embodiments, the computer program is also executed by the processor when the following steps are implemented: When the electronic device collects the preset identification information, the array pixels on the display unit are combined to illuminate the body part where the identification information to be collected is located, and the light detection device receives the reflected light signal to obtain the identification information. During the collection of the preset identification information, the computer program can cooperatively encode the array pixel groups on the display unit to illuminate the body part with the encrypted combined light source and collect multiple encrypted light of the preset identification information Message; or the computer program does not encode the cooperative hash function of the array pixel group on the display unit, and after the multiple default identification information collected by the light detection device, the computer program uses the encrypted hash function to convert the default identification information It is a preset ID message digest, which is stored in the universal integrated circuit card in the form of a preset ID message digest. The cryptographic hash function, Hash Function (also directly transliterated as "hash"), is to convert an input of any length (also known as pre-image) to a fixed-length output by a hash algorithm. The output is the hash value. This conversion is a kind of compression mapping, that is, the space of the hash value is usually much smaller than the space of the input, and different inputs may be hashed into the same output. In short, the cryptographic hash function is a function that compresses a message of any length into a fixed-length message digest. The conversion can compress the storage space of the preset identification message, so that the preset identification message Well stored.

As shown in FIG. 12, it is a flowchart of steps when a computer program according to an embodiment of the present invention is executed by a processor. When the computer program is executed by the processor, the following steps are also implemented:

First go to step S1201 to store the authentication key in the integrated circuit card, the authentication key includes a public key and a private key;

Then go to step S1202 to obtain the public key in the universal integrated circuit card, and use the RSA encryption algorithm to apply the public key to encrypt the digest of the preset ID message to obtain the preset encrypted message, which includes the encrypted A summary of the default identification message;

Then, in step S1203, after receiving the identity message to be authenticated, the encrypted hash function is used to convert the identity message to be authenticated into the digest of the identity message to be authenticated; and the RSA encryption algorithm is applied to encrypt the digest of the authenticated identity message using the public key to obtain An encrypted message to be authenticated, the encrypted message to be authenticated includes a digest of the encrypted identity message to be authenticated;

Then go to step S1204 to obtain the private key in the universal integrated circuit card, and use the RSA encryption algorithm to decrypt the preset encrypted message by using the private key to obtain a summary of the preset identification message;

Then, proceed to step S1205 to compare the preset digest of the identity identification message with the digest of the identity message to be authenticated. If the match is successful, proceed to step S1207, and the authentication succeeds; With the above method, public key encryption and private key decryption are adopted. Since the public key and private key are stored in the UICC card, the extraction security of extracting the digest of the default identification information in the UICC card is greatly improved. In other embodiments, the algorithm for encrypting or decrypting the digest is not limited to the RSA algorithm, but may be other existing encryption and decryption algorithms.

As shown in FIG. 13, in order to further improve the security of message authentication, in some embodiments, when the computer program is executed by the processor, the following steps are also implemented:

Firstly, after step S1301 is received to receive the preset identity recognition message, a first random number string and a first random blank are randomly generated. The first randomly filled blank is a character randomly generated and filled in a digest of a preset ID message; the preset encrypted message further includes an encrypted first random number string and a first randomly filled blank; and then enters the step After receiving the identity message to be authenticated, S1302 randomly generates a second random number string and a second random padding blank. The second random padding blank is a randomly generated character filled in the digest of the identity message to be authenticated; and then proceeds to step S1303 Obtain the private key in the universal integrated circuit card, and use the RSA encryption algorithm to decrypt the preset encrypted message by using the private key to obtain the first random number string and the first randomly filled blank; then proceed to step S1304 to compare the first Whether the random number string and the second random number string, the first random padding blank and the second random padding blank match successfully, if yes, go to step S1306, identity authentication succeeds, otherwise go to step S1305, authentication fails. In short, in order for the identity message to be authenticated to pass the authentication, in addition to the digest generated by it matching the digest of the default identity message in the UICC card, it also requires the first random number string and the second random number string 1. The first randomly filled blank matches one or more of the second randomly filled blank, thereby effectively improving the security of identity message authentication.

In order to allow users to set different application software or encryption levels for booting of electronic devices according to actual needs, in some embodiments, when the computer program is executed by the processor, the following steps are also implemented:

Receiving an encryption level setting instruction to set the encryption level of the electronic device, the encryption level including a first encryption level, a second encryption level, and a third encryption level;

When the electronic device is at the first encryption level, the conditions for judging the success of the identity authentication are the default identity message digest and the identity message digest to be authenticated, the first random number string and the second random number string, and the first random filled blank and All the three random match blanks match successfully;

When the electronic device is at the second encryption level, the conditions for judging successful identity authentication are that the preset digest of the identification message matches the digest of the identity message to be authenticated successfully, and the first random number string and the second random number string, the first random Any one of the blank filling and the second random blank filling is successfully matched;

When the electronic device is at the third encryption level, the condition for judging successful identity authentication is that the preset digest of the identity identification message and the digest of the identity message to be authenticated are successfully matched.

In short, the encryption level from high to low is the first encryption level, the second encryption level, and the third encryption level. For applications that require enhanced encryption, such as software that involves financial transactions, trade secret data, and online payment passwords, users can set the encryption level of these applications to the first encryption level, so that during the authentication process of identity messages, Only when the preset digest of the identification message and the digest of the identity message to be authenticated, the first random number string and the second random number string, the first random padding blank and the second random padding blank match all successfully The corresponding unlocking operation or payment operation can be completed, thereby improving the security of the message data. For applications that do not require enhanced encryption, such as browsing album pictures, users can set the encryption level of the application to the second encryption level or the third encryption level according to their needs.

In some embodiments, when the computer program is executed by the processor, the following steps are implemented: receiving multiple preset identification messages collected by the light detection device, and using a cryptographic hash function to convert the multiple preset identification messages Convert to default digest of identification message. Multiple preset identification messages may be the same type or different types. For example, when the preset identification information is fingerprint information of different fingers, when the user places multiple fingers on the identification area, the light detection device can simultaneously collect the preset fingerprint information corresponding to the multiple fingers of the user, and then use The encrypted hash function converts the collected multiple fingerprint information into a fingerprint summary. As another example, multiple preset identification messages include fingerprint information and face information of a finger, and the encrypted hash function will be used to convert the face information and fingerprint information into corresponding fingerprint digests. There are multiple preset identification messages, on the one hand, it provides users with more choices, and on the other hand, it effectively improves the security and accuracy of the authentication of the identification message.

The light detection device is a TFT image sensing array film, which includes MxN pixel detection areas, and each pixel detection area is correspondingly provided with more than one thin film transistor to form a set of pixel thin film circuits for scanning driving and transmitting data, and A light detection film; the light detection film includes a photosensitive diode or a photosensitive transistor. Taking the light detection film including a photodiode as an example, the basic circuit composition of each pixel detection area is shown in FIG. 2. The photodiode is the main sensing device that forms the light detection film. The gate scanning line operates the thin film transistor (TFT) in the on mode at a fixed frame rate. When the light detection device detects When the optical signal is detected, the opened thin film transistor can transmit the capacitor voltage data to the reading chip. For details, please refer to the following two documents: [1] "MJ Powell, ID French, JR Hughes, NC Bird, OS Davies, C. Glasse, and JE Curran, [2] "Amorphous silicon image sensor arrays," in Mater. Res . Soc. Symp. Proc., 1992, vol. 258, pp. 1127–1137", "B. Razavi, "Design of Analog CMOS Integrated Circuits," McGraw-Hill, 2000".

The light detection device is a TFT image sensing array film, and its light detection wavelength range includes a visible light band or an infrared light band. The TFT image sensing array film is composed of MXN light detection films, and each light detection film corresponds to one pixel. Therefore, the TFT image sensing array film can be used to detect MXN pixels to form a corresponding image. For each light detection film, there are several ways to achieve:

Embodiment 1: The TFT image sensing array film (that is, the light detection device) is an array formed by photosensitive diodes. The array formed by the photosensitive diodes includes a photosensitive diode sensing area. Existing liquid crystal display (LCD) panels or organic light emitting diode (OLED) display panels are driven by a TFT structure to scan a single pixel to achieve the display function of the pixel array on the panel. The main structure for forming the TFT switching function is a semiconductor field effect transistor (FET). Among the well-known semiconductor layer materials, amorphous silicon, polysilicon, indium gallium zinc oxide (IGZO), or organic compounds mixed with carbon nanomaterials, etc. Wait. Since the structure of the light-sensing diode can also be prepared by using such semiconductor materials, and the production equipment is also compatible with the production equipment of the TFT array, in recent years, TFT light detection diodes (ie, photosensitive diodes) have begun to TFT array preparation method for production. For the specific structure of the existing photosensitive diode, reference may be made to the description of the structure of the light detection device in US Patent No. US6943070B2 and Patent No. CN204808361U of the People's Republic of China. The production process of the TFT image sensing array film is different from the TFT structure of the display panel: the pixel opening area of the display panel is originally changed into a light sensing area in the production process. The TFT preparation method can use thin glass as the base material, and can also use high temperature resistant plastic material as the base material, as described in US patent US6943070B2.

The existing TFT image sensing array film is susceptible to factors such as the reflection and refraction of ambient light or visible light emitted by the pixels of the display screen, causing optical interference and seriously affecting the signal of the TFT image sensing array film embedded under the display panel Noise ratio (SNR), in order to improve the signal-to-noise ratio, as shown in FIG. 3, the light detection film of the present invention has been further improved so that the improved TFT image sensing array film can detect and recognize the user's body parts Infrared signal reflected back. The specific structure is as follows:

The photosensitive diode layer includes a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer. The p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are stacked from top to bottom, and the i-type semiconductor layer is Microcrystalline silicon structure or non-crystalline germanium silicide structure. The microcrystalline silicon structure is a semiconductor layer formed by chemical vapor deposition of silane and hydrogen. The crystallinity of the microcrystalline silicon structure is greater than 40%, and the forbidden band width is less than 1.7 eV. The amorphous germanium silicide structure is an amorphous semiconductor layer formed by chemical vapor deposition of silane, hydrogen, and germane, and its forbidden band width is less than 1.7 eV.

Band gap (Band gap) refers to a band gap width (unit is electron volt (eV)), the energy of the electron in the solid can not be continuous value, but some discontinuous energy band, it is necessary to conduct electricity Free electrons exist, and the energy band in which free electrons exist is called the conduction band (which can conduct electricity). To become a free electron, the bound electron must obtain enough energy to transition from the valence band to the conduction band. The minimum value of this energy is the forbidden band width. . The width of the forbidden band is an important characteristic parameter of the semiconductor. Its size is mainly determined by the energy band structure of the semiconductor, that is, it is related to the crystal structure and the bonding properties of atoms.

At room temperature (300K), the forbidden band width of germanium is about 0.66ev. The silane contains germanium. When doped with germanium, the band gap of the i-type semiconductor layer will be reduced. When it is less than 1.7 eV, It indicates that the i-type semiconductor layer can receive optical signals in the wavelength range from visible light to infrared light (or near infrared light). By adjusting the concentration of GeH4 deposited by chemical meteorology, the operating wavelength range of photosensitive diodes containing amorphous or microcrystalline germanium silicide structures can be extended to the range of 600nm to 2000nm.

Embodiment 2: On the basis of adopting Embodiment 1, in order to improve the quantum efficiency of photoelectric conversion, amorphous silicon photodiodes can also be formed by stacking p-type/i-type/n-type structures with more than two junctions. The p-type/i-type/n-type material of the first junction layer of the photodiode is still an amorphous silicon structure, and the p-type/i-type/n-type material above the second junction layer may be a microcrystalline structure, a polycrystalline structure or Doped with compound materials that extend the photosensitive wavelength range. In short, multiple sets of p-type/i-type/n-type structures can be stacked on top of each other to form a photosensitive diode structure. For each p-type/i-type/n-type structure, the photosensitizer described in Embodiment 1 is used. Diode structure.

Embodiment 3: On the basis of Embodiment 1 or Embodiment 2, for each p-type/i-type/n-type structure, the p-type semiconductor layer contained therein may be a multi-layer structure with more than two layers. For example, the p-type semiconductor layer has a three-layer structure, and includes a first p-type semiconductor layer (p1 layer), a second p-type semiconductor layer (p2 layer), and a third p-type semiconductor layer (p3 layer) from top to bottom. Among them, the p1 layer can use an amorphous structure and heavily doped boron (containing boron concentration is more than twice the standard process); p2 and p3 use microcrystalline structure, and normally doped boron (doped according to standard process concentration), rely on The reduced thickness of the p2 layer and p3 layer reduces the absorption of light, so that the light enters the i layer as much as possible and is absorbed by the i layer, improving the photoelectric conversion rate; on the other hand, the p2 layer and p3 layer are normally doped with boron It can effectively avoid the deterioration of the built-in potential due to heavy doping of the p1 layer. When the p-type semiconductor layer includes other layers, the multilayer structure is similar to this, and will not be described here.

Similarly, the n-type semiconductor layer may have a multilayer structure with more than two layers. For example, the n-type semiconductor layer has a three-layer structure, and includes a first n-type semiconductor layer (n1 layer), a second n-type semiconductor layer (n2 layer), and a third n-type semiconductor layer (n3 layer) from top to bottom. Among them, the n3 layer can use an amorphous structure and heavily doped phosphorus (phosphorus content is more than twice the standard process); n1 and n2 use a microcrystalline structure and normal doping phosphorus (according to the standard production process), relying on thickness reduction The n1 layer and the n2 layer reduce the absorption of light, so that the light enters the i layer as much as possible and is absorbed by the i layer, improving the photoelectric conversion rate; on the other hand, the normal phosphorus doping of the n1 layer and n2 layer can be effectively avoided The built-in potential is degraded due to the heavy doping of the n3 layer. When the n-type semiconductor layer includes a multi-layer structure of other layers, it is similar to this, and will not be repeated here.

Embodiment 4: This embodiment is a further improvement of Embodiment 1 or 2 or 3, as shown in (a) of FIG. 6, and specifically includes: a first optical device is provided on the upper end surface of the p-type semiconductor layer The first optical device is used to reduce the reflectance of light on the upper end surface of the p-type semiconductor layer, or to reduce the angle of refraction of light on the p-type semiconductor layer to increase the amount of light incident. Reducing the angle of refraction of light in the p-type semiconductor layer allows the light to enter the p-type semiconductor layer as close to the vertical direction as possible, so that the light is absorbed by the i-type semiconductor layer under the p-type semiconductor layer as much as possible, thereby Further improve the photoelectric conversion rate of photosensitive diode. When the p-type semiconductor layer has a multilayer structure, the first optical device is disposed on the upper end surface of the p-type semiconductor layer on the uppermost layer.

The first optical device includes a photonic crystal structure or a microlens array structure whose refractive index changes periodically, or a diffuse scattering structure whose refractive index changes non-periodically. The refractive index of the first optical device is less than the refractive index of the p-type semiconductor layer, so that after the first optical device is refracted, the incident angle is smaller than the refraction angle, that is, the light enters the p-type as close to the vertical direction as possible Semiconductor layer.

Embodiment 5: This embodiment is a further improvement of Embodiment 1, or 2, 3, or 4, as shown in (b) and (c) of FIG. 6, the lower end surface of the n-type semiconductor layer is further provided with a second An optical device, the second optical device is used to increase the multiple reflectivity of light on the lower end surface of the n-type semiconductor layer. The multiple reflectivity means that the light enters the i-type semiconductor layer after being reflected by the second optical device and is absorbed by the i-type semiconductor layer again, and the absorbed light enters the i-type semiconductor layer after being reflected by the second optical device again. Repeat this many times to increase the photoelectric conversion rate of the i-type semiconductor layer. When the n-type semiconductor layer has a multilayer structure, the second optical device is disposed on the lower end surface of the n-type semiconductor layer at the bottom.

The second optical device includes a photonic crystal structure with a periodically changing refractive index, or a diffuse scattering structure with a non-periodic changing refractive index, and the refractive index of the second optical device is less than the refractive index of the n-type semiconductor layer . In this way, the light can be reflected on the lower end surface of the n-type semiconductor layer as much as possible, so that the reflected light is absorbed by the i-type semiconductor layer again, and then the signal within the light wavelength range that can be absorbed by the i-type semiconductor layer is appropriately amplified. Increase the photoelectric flow in this wavelength range.

Embodiment 6: As shown in FIG. 4, the TFT image sensing array film (ie, light detection device) is an array formed by photosensitive transistors, and the array formed by the photosensitive transistors includes a photosensitive transistor sensing area, The photosensitive transistor sensing area is provided with a photosensitive thin film transistor. The photosensitive thin film transistor includes a gate 1, a source 2, a drain 3, an insulating layer 4, and a light-absorbing semiconductor layer 5. The photosensitive thin film transistor is Inverted coplanar structure, the inverted coplanar structure includes: the gate electrode 1, the insulating layer 4, and the source electrode 2 are arranged longitudinally from bottom to top, and the drain electrode 3 and the source electrode 2 are arranged laterally and coplanar ; The insulating layer 4 wraps the gate 1, so that the gate 1 and the source 2, the gate 1 and the drain 3 are not in contact; the gap between the source 2 and the drain 3, the source 2 and A photosensitive current channel is formed between the lateral sides of the drain 3, and the light-absorbing semiconductor layer 5 is disposed in the photosensitive current channel.

Generally, the gate voltage controls the TFT to operate in the off state, and no current flows from the source to the drain; however, when the TFT is irradiated by the light source, due to the energy of light, the electron-hole pair is excited in the semiconductor. The field effect of the structure will cause the electron-hole pairs to separate, which in turn causes the TFT to produce a photosensitive current. Such photosensitive current characteristics allow TFT arrays to be used in light detection or light detection technology. Compared with the device that generally uses TFT current as the photosensitive thin film transistor, the present invention uses the inverted coplanar field effect transistor structure to arrange the light-absorbing semiconductor layer on the uppermost light-absorbing layer, which greatly increases the excitation of photoelectrons and improves the photoelectric conversion. effectiveness.

As shown in FIG. 7, it is a flowchart of a method for manufacturing a light detection film according to an embodiment of the present invention. The method is used to prepare the photosensitive thin film transistor of Example 6 (that is, the light detection film), and specifically includes the following steps:

Firstly, go to step S801, the gate electrode is formed on the substrate of the pixel thin film transistor by chemical magnetron sputtering coating. The substrate of the pixel thin film transistor can be a hard board or a flexible material (such as polyimide);

Then enter step S802 to form an insulating layer by chemical vapor deposition or magnetron sputtering on the gate electrode;

Then proceed to step S803 to coat the source and drain n-type doped semiconductor layers by chemical vapor deposition on the insulating layer, and to coat the source and drain metal layers by magnetron sputtering, The source electrode and the drain electrode of the predetermined structure are defined by the yellow photoetching process, and the source electrode and the drain electrode are laterally coplanar, and the gap is matched, and the photosensitive current channel is formed between the source electrode and the drain electrode laterally;

Then, step S804 is performed to deposit a light-absorbing semiconductor layer by chemical vapor deposition coating in the photosensitive current channel.

Embodiment 7: In terms of the well-known field effect transistor structure, the TFT as the scan drive and data transfer switch does not need to be specifically designed for the structure of collecting photocurrent between the source and the drain; however, it is applied to the field effect transistor In the detection of photosensitive current, if the electron-hole pairs excited by the light are separated by the field effect, the drift path driven by the electric field is too long, and it is very likely that the photoelectrons have already reached the electrode before they have successfully reached the electrode. Recombination with holes, or trapped by Dangling Bond defects in the light-absorbing semiconductor layer itself, cannot effectively contribute to the photocurrent output for light detection.

In order to improve the photosensitive current affected by the channel length between the source and the drain, in order to achieve the purpose of increasing the absorption semiconductor area without deteriorating the photoelectric conversion efficiency, in this embodiment, the source and drain of the fourth embodiment are carried out With further improvement, a new structure of source and drain was proposed.

As shown in FIG. 5, the number of the source electrode and the drain electrode are multiple, the source electrode and the source electrode are connected in parallel with each other, and the drain electrode and the drain electrode are connected in parallel with each other; the gap between the source electrode and the drain electrode Cooperating, forming a photosensitive current channel between the source electrode and the drain electrode laterally includes: forming a first gap between adjacent source electrodes, one drain electrode being placed in the first gap, and forming a second gap between adjacent drain electrodes In the gap, one source electrode is placed in the second gap, and the source electrode and the drain electrode are alternately arranged and the gap fits. The distance between each source electrode and the adjacent drain electrode is less than the electron drift distance, which is the distance that electrons can survive under the action of field effect. In this way, in each detection pixel, multiple source electrodes belonging to the same pixel are connected in parallel with each other, and multiple drain electrodes belonging to the same pixel are also connected in parallel, which can effectively reduce the probability of recombination of photo-excited electrons and holes. The successful probability of collecting photoelectrons under the field effect is improved, and the photosensitivity of the TFT current photosensitive thin film transistor is maximized.

As shown in FIGS. 8 to 11, in order to gradually prepare the photosensitive thin film transistor of Example 7 (ie, the light detection film), the general steps are similar to those of preparing the photosensitive thin film transistor of Example 6. The difference is that when preparing the source and the drain, in step S803, the source and the drain of the predetermined structure are defined by the yellow photoetching process, the source and the drain are laterally coplanar, and the gap fits, and makes The formation of a photosensitive current channel between the source and the drain laterally includes: the source electrode group and the drain electrode group are defined by a yellow photoetching process, and each source electrode group includes multiple source electrodes, source electrodes and source electrodes Parallel to each other; each drain electrode group includes multiple drain electrodes, and the drain electrodes and the drain electrodes are parallel to each other; a first gap is formed between adjacent source electrodes, and a drain electrode is placed in the first gap A second gap is formed between adjacent drain electrodes, a source electrode is placed in the second gap, and the source electrode and the drain electrode are alternately arranged and the gap is matched.

In some embodiments, the light detection device is used to receive a detection trigger signal, is in a light detection state, and receives a light signal reflected by a detection part (such as a fingerprint, eyeball, iris, etc.) to capture the user's Detecting part information; and for receiving light source trigger signal, in the state of emitting light source (such as infrared light source). Preferably, the light source trigger signal and the detection trigger signal are alternately switched and conform to a preset frequency. Taking an array formed by light detection devices as photosensitive diodes as an example, in actual application, a bias voltage (including forward bias voltage, or zero bias voltage or negative bias voltage) can be applied by the TFT as a scan drive Between the p-type/i-type/n-type photodiode, the TFT image sensing array film can emit infrared light.

Specifically, a positive bias voltage, or a zero bias voltage or a negative bias voltage may be alternately applied between the p-type/i-type/n-type infrared photosensitive diodes to trigger the first trigger signal or the second trigger signal. Taking the array formed by infrared photosensitive diodes as an example, there are 10 columns of pixel dots. In the first period, the forward bias is applied to the p-type/i-type/n-type infrared photosensitive diodes, so that 10 columns of pixel dots All are in the state of emitting infrared light; during the second period, the zero bias or negative bias is applied to the p-type/i-type/n-type infrared photosensitive diode, so that the 10 columns of pixel dots are all in the infrared light detection state. In order to capture the infrared light information reflected by the user's eyeball and generate the corresponding infrared image output; in the third cycle, the p-type/i-type/n-type infrared photodiode is forward biased to make 10 columns The pixel lattice is in the state of emitting infrared light, and it alternates repeatedly, and so on. Further, the light source trigger signal (ie, the first trigger signal) and the detection trigger signal (ie, the second trigger signal) are alternately switched, and the switching frequency conforms to a preset frequency. The time interval between adjacent cycles can be set according to the actual needs. The preferred time interval can be set as the TFT array driver scans each frame (Frame). The infrared photosensitive diode array can receive at least one frame of complete image signal. Time, that is, the preset frequency is to switch every time the above time interval passes.

In some embodiments, the identity recognition area includes a plurality of identity recognition sub-areas, and a light detection device is correspondingly disposed under each identity recognition sub-area. Taking fingerprint recognition as an example, when the computer program is executed by the processor, the following steps are realized: receiving a start command for the fingerprint recognition sub-region (ie, identification recognition sub-region), and the detection control circuit turns on the fingerprint recognition sub-region (ie, recognition recognition sub-region) ) Below the light detection device; or, upon receiving a close command to the fingerprint recognition sub-region, the detection control circuit turns on the light detection device below the fingerprint recognition sub-region.

Taking the number of fingerprint recognition sub-regions as an example, the two fingerprint recognition sub-regions may be evenly distributed on the screen one by one or one from left to right, or may be distributed on the screen in other arrangements. The following specifically describes the application process of a terminal with two fingerprint recognition sub-regions: During use, it receives a trigger signal triggered by the user and connects the light detection device (ie, light detection device) under the two fingerprint recognition sub-regions Both are set to on. In a preferred embodiment, the range formed by the two fingerprint recognition sub-regions covers the entire display screen, so as to ensure that when the light detection devices below the two fingerprint recognition sub-regions are all set to the on state, the light signal entering the display screen can be The TFT image sensing array film (ie light detection device) underneath is absorbed, so that the user's fingerprint information or body part information can be captured in time. Of course, the user can also set the light detection device under a certain fingerprint recognition sub-region to turn on, and turn off the light detection device under another fingerprint recognition sub-region according to their own preferences.

It should be noted that although the above embodiments have been described herein, it does not limit the scope of patent protection of the present invention. Therefore, based on the innovative concept of the present invention, the changes and modifications to the embodiments described herein, or the equivalent structure or equivalent process transformation made by the description and drawings of the present invention, directly or indirectly apply the above technical solutions All other related technical fields are included in the patent protection scope of the present invention.

1‧‧‧Gate 2‧‧‧Source 3‧‧‧Drain 4‧‧‧Insulation layer 5‧‧‧Light absorbing semiconductor layer 101‧‧‧Touch screen or cover glass 102‧‧‧Display unit 103‧‧‧Low refractive index adhesive 104‧‧‧Light detection device 105‧‧‧Flexible circuit board 106‧‧‧Main circuit board 107‧‧‧Universal integrated circuit card slot 108‧‧‧Universal integrated circuit card D‧‧‧Drain electrode G‧‧‧Gate electrodes n1, n2, i2, p1, p2‧‧‧Semiconductor layer S‧‧‧Source electrodes S801~S804 ~S1306‧‧‧ Step TFT‧‧‧ Thin Film Transistor

FIG. 1 is a schematic diagram of an electronic device according to an embodiment of the present invention. 2 is a schematic circuit diagram of a pixel detection area according to an embodiment of the invention. 3 is a schematic structural diagram of a light detection film according to an embodiment of the invention. 4 is a schematic structural diagram of a light detection film according to another embodiment of the present invention. FIG. 5 is a schematic diagram of the cooperation between the source and the drain according to an embodiment of the present invention. 6 is a schematic diagram of a distribution method of an optical device according to an embodiment of the present invention. 7 is a flowchart of a method for manufacturing a light detection film according to an embodiment of the invention. FIG. 8 is a schematic diagram of a light detection film according to an embodiment of the present invention. FIG. 9 is a schematic diagram of a light detection film according to another embodiment of the present invention. FIG. 10 is a schematic diagram of a light detection film according to another embodiment of the present invention. FIG. 11 is a schematic diagram of a light detection film according to another embodiment of the present invention. FIG. 12 is a flowchart of steps when a computer program according to an embodiment of the present invention is executed by a processor. FIG. 13 is a flowchart of steps when a computer program according to another embodiment of the present invention is executed by a processor.

101‧‧‧Touch screen or cover glass

102‧‧‧Display unit

103‧‧‧Low refractive index adhesive

104‧‧‧light detection device

105‧‧‧ flexible circuit board

106‧‧‧Main circuit board

107‧‧‧General integrated circuit card slot

108‧‧‧General Integrated Circuit Card

Claims (9)

An electronic device includes a display unit, a light detection device, a main circuit board, a processor, and a storage medium; the display unit, the light detection device, and the main circuit board are arranged from top to bottom; the light detection A detection device is connected to the processor, an identification recognition area is provided on the display unit, and the light detection device is provided below the identification recognition area; the light detection device includes MxN pixel detection areas, Each of the pixel detection areas is correspondingly provided with a group of more than one thin film transistors to form a group of pixel drive circuits for scanning driving and data transmission, and a light detection film; the light detection film includes a photodiode or photoelectric An array formed by crystals; a universal integrated circuit card slot is provided on the main circuit board, a universal integrated circuit card is provided in the universal integrated circuit card slot; an executable computer is stored in the storage medium Program, when the computer program is executed by the processor, the following steps are realized: receiving the preset identification information collected by the light detection device, and writing the preset identification information to the general integrated circuit Card; receiving an identity authentication request and the identity information to be authenticated collected by the light detection device, obtaining the preset identity recognition information from the universal integrated circuit card, and matching the identity information to be authenticated with the corresponding The preset identity recognition information is compared, if the match is successful, the identity authentication is successful, otherwise the authentication fails, wherein the light detection film is an array formed by photosensitive diodes, and the photosensitive diodes are formed by The array includes a photodiode sensing region, the photodiode sensing region includes a photodiode layer, the photodiode layer includes a p-type semiconductor layer, an i-type semiconductor layer, an n-type semiconductor layer, the p-type semiconductor Layer, the i-type semiconductor And the n-type semiconductor layer are stacked from top to bottom. The i-type semiconductor layer is a microcrystalline silicon structure or an amorphous germanium silicide structure. The electronic device as described in item 1 of the patent application scope, wherein the identity recognition area includes a plurality of identity recognition sub-areas, and each of the identity recognition sub-areas is correspondingly provided with the light detection device; the electronic device also A light detection device control circuit is included, and the light detection device control circuit is connected to the light detection device under each of the identification sub-regions; the light detection device control circuit is used to When the start signal of the light detection device is controlled, the light detection device is controlled to be turned on, or used to control the light detection device to be turned off when a shutdown signal of a certain light detection device is received. The electronic device according to item 1 or item 2 of the patent application scope, wherein the computer program is executed by the processor and further implements the following steps: encoding the pixel array combination preset on the display unit, and The coded pixel array is used to illuminate the body part and receive the light signal reflected back from the body part to obtain the preset identification information. The electronic device as described in item 1 or 2 of the patent application scope, wherein the computer program is executed by the processor and further implements the following steps: adopting an encrypted hash function to convert the preset identification information into a preset A summary of the identification message, the preset identification message is stored in the universal integrated circuit card in the form of the summary of the preset identification message. The electronic device as described in item 4 of the patent application scope, wherein the computer program implements the following steps when executed by the processor: Receiving the preset ID information collected by the light detection device, and using an encrypted hash function to convert the preset ID information into the digest of the preset ID information; the preset ID information Including face information, fingerprint information, iris information, blood volume information. The electronic device as described in item 4 of the patent application scope, in which the computer program is executed by the processor and further implements the following steps: storing the authentication key in the integrated circuit card, the authentication key includes Public key and private key; obtain the public key in the universal integrated circuit card, and use the RSA encryption algorithm to encrypt the digest of the preset identification message using the public key to obtain a preset encrypted message , The preset encrypted message includes an encrypted digest of the preset identity recognition message; after receiving the identity message to be authenticated, the encrypted hash function is used to convert the identity message to be authenticated to the identity to be authenticated Message digest; and using the RSA encryption algorithm to encrypt the digest of the identity message to be authenticated using a public key to obtain an encrypted message to be authenticated, the encrypted message to be authenticated includes the encrypted digest of the identity message to be authenticated; Obtain the private key in the universal integrated circuit card, and use the RSA encryption algorithm to apply the private key to decrypt the preset encrypted message, obtain the digest of the preset identity identification message, and set the preset The digest of the identity recognition message is compared with the digest of the identity message to be authenticated. If the match is successful, the identity authentication is successful, otherwise the authentication fails. The electronic device as described in item 6 of the patent application scope, wherein the computer program is executed by the processor and further implements the following steps: after receiving the preset identification message, randomly generate a first random number string and a A randomly filled blank, the first randomly filled blank is a randomly generated character filled in the digest of the preset identification message; the preset encrypted message further includes the encrypted first random number string and The first random filled blank; after receiving the identity message to be authenticated, randomly generated a second random digital string and a second random filled blank, the second random filled blank is randomly generated and filled in the to-be-authenticated The characters of the digest of the identity message; obtain the private key in the universal integrated circuit card, and use the RSA encryption algorithm to apply the private key to decrypt the preset encrypted message to obtain the first random A digital string and the first randomly filled blank; and comparing whether the first random digital string and the second random digital string, whether the first random filled blank and the second random filled blank match successfully , If it is, the identity authentication is successful, otherwise the authentication fails. The electronic device as described in item 7 of the patent application scope, wherein the computer program is executed by the processor and further implements the following steps: receiving an encryption level setting instruction, setting an encryption level of the electronic device, the encryption level including A first encryption level, a second encryption level, and a third encryption level; when the electronic device is at the first encryption level, the conditions for judging successful identity authentication are the summary of the preset identity recognition message and the identity to be authenticated Message digest, the first random number string and the second random number string, the first All three of the randomly filled blank and the second randomly filled blank match successfully; when the electronic device is at the second encryption level, the condition for judging successful identity authentication is the digest of the preset identity recognition message A successful match with the digest of the identity message to be authenticated, and any of the first random number string and the second random number string, the first random padding blank, and the second random padding blank One match is successful; when the electronic device is at the third encryption level, the condition for judging that the identity authentication is successful is that the preset digest of the identity recognition message and the digest of the identity message to be authenticated are successfully matched. An electronic device includes a display unit, a light detection device, a main circuit board, a processor, and a storage medium; the display unit, the light detection device, and the main circuit board are arranged from top to bottom; the light detection A detection device is connected to the processor, an identification recognition area is provided on the display unit, and the light detection device is provided below the identification recognition area; the light detection device includes MxN pixel detection areas, Each of the pixel detection areas is correspondingly provided with a group of more than one thin film transistors to form a group of pixel drive circuits for scanning driving and data transmission, and a light detection film; the light detection film includes a photodiode or photoelectric An array formed by crystals; a universal integrated circuit card slot is provided on the main circuit board, a universal integrated circuit card is provided in the universal integrated circuit card slot; an executable computer is stored in the storage medium Program, when the computer program is executed by the processor, the following steps are realized: receiving the preset identification information collected by the light detection device, and writing the preset identification information to the general integrated circuit card; Receiving an identity authentication request and the identity message to be authenticated collected by the light detection device, obtaining the preset identity recognition message from the universal integrated circuit card, and comparing the identity message to be authenticated with the corresponding The preset identification information is compared, if the matching is successful, the identity authentication is successful, otherwise the authentication fails, wherein the light detection film is an array formed by photosensitive transistors, and the array formed by the photosensitive transistors includes photosensitive A crystal sensing area, the photosensitive transistor sensing area is provided with a photosensitive thin film transistor, the photosensitive thin film transistor includes a gate electrode, a source electrode, a drain electrode, an insulating layer, and a light absorbing semiconductor layer; the photosensitive thin film transistor is inverted A coplanar structure, the inverted coplanar structure includes: the gate electrode, the insulating layer, and the source electrode are longitudinally arranged from bottom to top, and the drain electrode and the source electrode are laterally coplanar; The insulating layer wraps the gate electrode, so that the gate electrode and the source electrode, and the gate electrode and the drain electrode are not in contact; the gap between the source electrode and the drain electrode is matched, A photosensitive current channel is formed between the source electrode and the drain electrode laterally, and the light-absorbing semiconductor layer is disposed in the photosensitive current channel.

Images