TWI694508B - Adhesive tape for semiconductor processing - Google Patents

Abstract

The present invention provides a tape for semiconductor processing that can be sufficiently heated and contracted in a short time and can maintain a kerf width. The adhesive tape (10) for semiconductor processing of the present invention is characterized by having an adhesive tape (15) having a base film (11) and an adhesive formed on at least one side of the base film (11) Layer (12), the average value of the differential value of the thermal deformation rate per 1°C between 40°C and 80°C in the MD direction of the aforementioned adhesive tape (15) measured by a thermomechanical characteristic testing machine at elevated temperature and In the TD direction, the sum of the average values of the differential values of the thermal deformation rate per 1°C between 40°C and 80°C measured by the thermomechanical characteristic tester at the time of temperature rise is a negative value.

Description

Adhesive tape for semiconductor processing

The invention relates to an expandable adhesive tape for semiconductor processing, which can be used to fix a wafer in a slicing step of cutting a wafer into a wafer-like element, and can also be used to make a chip-to-chip or a chip after slicing The die attaching step or the mounting step followed with the substrate, and can be used in the step of cutting the adhesive layer along the wafer by expansion.

Conventionally, in the manufacturing steps of semiconductor devices such as integrated circuits (IC: Integrated Circuit), the following steps have been carried out: in order to thin the wafer after the circuit pattern is formed, the back grinding step of grinding the back surface of the wafer is carried out, and the back surface of the wafer is pasted. After attaching adhesive and stretchable tape for semiconductor processing, the dicing step of cutting the wafer in wafer units, the expansion step of expanding (expanding) the tape for semiconductor processing, and the pickup step of picking up the cut wafer Then, the die bonding (mounting) step of picking the wafers on a lead frame, a packaging substrate, etc. (or stacking and bonding the wafers in a stacked package).

In the above back grinding step, in order to protect the circuit pattern formation surface (wafer surface) of the wafer from contamination, surface protection tape is used. After grinding the back surface of the wafer, when peeling the surface protection tape from the wafer surface, fix the tape for semiconductor processing (slicing and die bonding tape) described below on the back surface of the wafer, and then fix the tape side for semiconductor processing At the suction table, the surface protection tape is applied to reduce the adhesion to the wafer, and then the surface protection tape is peeled off. The wafer after peeling the surface protection tape is then picked up from the suction table in a state where the wafer is attached to the back side and used for the next slicing step. In addition, the above-mentioned treatment to reduce the adhesive force is when the surface protective tape is made of energy ray-curable components such as ultraviolet rays, is an energy ray irradiation treatment, and when the surface protective tape is made of thermosetting components, it is Heat treatment.

In the slicing step to the mounting step after the back grinding step, a tape for semiconductor processing in which an adhesive layer and an adhesive layer are sequentially laminated on the base film is used. Generally, when using these semiconductor processing tapes, first, the adhesive layer of the semiconductor processing tape is attached to the back of the wafer to fix the wafer, and the wafer and the adhesive layer are sliced in units of wafers using a slicing blade. Subsequently, by expanding the tape in the radial direction of the wafer, an expansion step of expanding the interval between the wafers is performed. This expansion step is implemented in order to improve the visibility of the wafer by a CCD camera or the like in the subsequent pickup step and to prevent damage to the wafer due to contact between adjacent wafers when picking up the wafer. Subsequently, the wafer is peeled off from the adhesive layer together with the adhesive layer in the pickup step and picked up, and is directly adhered to the lead frame or the packaging substrate in the mounting step. In this way, by using an adhesive tape for semiconductor processing, the wafer with the adhesive layer can be directly adhered to the lead frame or the packaging substrate, so that the step of applying the adhesive or the step of attaching the die bonding film to each wafer can be omitted.

However, in the slicing step, as described above, since the wafer is sliced together with the adhesive layer using the slicing blade, not only the cutting chips of the wafer but also the adhesive layer. Therefore, when the cutting chips of the adhesive layer are blocked in the dicing groove of the wafer, the wafers are closely adhered to each other to cause poor pickup, and there is a problem that the manufacturing yield of the semiconductor device is reduced.

In order to solve these problems, a method is proposed in which only the wafer is sliced by a blade in the slicing step, and in the expansion step, the adhesive layer is cut into individual wafers by expanding the tape for semiconductor processing (for example, Patent Literature 1). In this way, according to the method of cutting the adhesive layer by using the tension during expansion, no cutting chips of the adhesive will occur, and there will be no adverse effect on the pick-up step.

Furthermore, in recent years, as a method of cutting a wafer, a so-called stealth dicing method that can cut a wafer without contact using a laser processing apparatus has been proposed. For example, Patent Document 2 discloses a cutting method of a semiconductor substrate as an invisible slicing method, which includes the steps of: interposing an adhesive layer (adhesive resin layer) to focus the light inside the semiconductor substrate to which the sheet is attached , By irradiating laser light, a modified region is formed by multiphoton absorption inside the semiconductor substrate, and the modified region is used as a step of cutting the part, and the semiconductor substrate is cut along the planned part by expanding the sheet And the steps of the adhesive layer.

In addition, as another wafer cutting method using a laser processing apparatus, for example, a method for dividing a wafer is disclosed in Patent Document 3, which includes the following steps: installing an adhesive layer for die bonding on the back of the wafer (then Film), the step of attaching an extendable protective adhesive tape to the adhesive layer side of the wafer to which the adhesive layer is attached, and irradiating laser light along the channel from the surface of the wafer to which the protective adhesive tape is attached, and The step of dividing into individual wafers, expanding the protective adhesive tape to apply tensile force to the adhesive layer, breaking the adhesive layer into steps for each wafer, and detaching the broken adhesive-attached wafer from the protective adhesive tape step.

According to the wafer cutting methods described in these Patent Documents 2 and 3, the wafers are cut in a non-contact manner by laser light irradiation and expansion of the tape, so the physical load on the wafers is When wafer cutting chips (chips) are generated when cutting blades that are currently mainstream, wafer cutting can be performed. In addition, since the adhesive layer is cut by expansion, cutting of the adhesive layer does not occur. Therefore, it has attracted attention as an excellent technology that can replace blade slicing.

However, as described in the above Patent Documents 1 to 3, the method of cutting the adhesive layer by expansion and expansion, when using conventional semiconductor processing tapes, has the following problem: As the expansion amount increases, the expansion ring The lifted portion stretches, and after the expansion is released, the portion relaxes, and the gap between the wafers cannot be maintained (hereinafter referred to as "notch width").

Therefore, a method is proposed in which the adhesive layer is cut by spreading, and after the spreading is released, the slack portion of the tape for semiconductor processing is heated and contracted to maintain the width of the cut (for example, Patent Documents 4 and 5). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-5530 [Patent Document 2] Japanese Patent Laid-Open No. 2003-338467 [Patent Document 3] Japanese Patent Laid-Open No. 2004-273895 [Patent Document 4] International Publication No. 2016/152957 No. [Patent Document 5] Japanese Patent Laid-Open No. 2015-211081

[Problem to be solved by invention]

However, the method of slackening and shrinking the tape for semiconductor processing due to expansion by heating is generally used for the slack circular ring portion that is lifted from the expansion ring, and the warm air is caused by surrounding a pair of warm air nozzles A method of heating and shrinking by touching this part.

The adhesive tape for semiconductor processing described in the above-mentioned Patent Document 4 has a heat shrinkage rate of 0% or more and 20% or less in both the tape longitudinal direction and the width direction when heated at 100°C for 10 seconds. However, when heating around the hot air nozzle, the temperature near the surface of the semiconductor processing tape gradually rises, so there is a problem that it takes time to remove the slack in all parts of the ring. Moreover, there is a problem that the width of the notch is narrow, and it is difficult to discriminate the boundary line with the adjacent wafer. In the image recognition at the time of picking up, a misrecognition of the wafer occurs, which deteriorates the yield of the manufacturing process of the semiconductor product.

In addition, the tape for semiconductor processing described in Patent Document 5 has a shrinkage ratio of 130% to 160°C or more (refer to claim 1 of Patent Document 5), and the temperature at which shrinkage occurs is high. Therefore, when heating and shrinking with warm air, a high temperature and a long heating time are required, and the warm air affects the adhesive layer near the periphery of the wafer, and the divided adhesive layer may melt and re-melt. Moreover, there is a problem that the width of the notch is narrow, and it is difficult to discriminate the boundary line with the adjacent wafer. In the image recognition at the time of picking up, a misrecognition of the wafer occurs, which deteriorates the yield of the manufacturing process of the semiconductor product.

Therefore, the object of the present invention is to provide sufficient heating and shrinking in a short time and to easily distinguish the boundary with the adjacent wafer, and to suppress the degree of misrecognition of the wafer in image recognition at the time of pickup, and to sufficiently maintain the width of the cut Adhesive tape for semiconductor processing. [Means to solve the problem]

In order to solve the above-mentioned problem, the adhesive tape for semiconductor processing of the present invention is characterized by having an adhesive tape having a base film and an adhesive layer formed on at least one side of the base film. The average value of the differential value of the thermal deformation rate per 1°C between 40°C and 80°C measured by the thermomechanical characteristic testing machine at a temperature rise and 40 measured by the thermomechanical characteristic testing machine at a temperature rise in the TD direction The sum of the average value of the differential value of the thermal deformation rate per 1°C between ℃ and 80°C is a negative value.

In addition, it is preferable that the adhesive tape for semiconductor processing laminates the adhesive layer and the release film sequentially on the adhesive layer side.

In addition, the above-mentioned tape for semiconductor processing is preferably used for full-cut and half-cut blade dicing, full-cut laser dicing, or stealth dicing using laser. [Effect of the invention]

The tape for semiconductor processing according to the present invention can be sufficiently heated and contracted in a short time and the boundary with the adjacent wafer can be easily discriminated, and the degree of wafer misrecognition in image recognition at the time of pickup can be suppressed, and the notch width can be sufficiently maintained.

The embodiments of the present invention will be described in detail below.

FIG. 1 is a cross-sectional view showing an adhesive tape 10 for semiconductor processing according to an embodiment of the present invention. The semiconductor processing tape 10 of the present invention cuts the adhesive layer 13 along the wafer when the wafer is cut into wafers by spreading. The adhesive tape 10 for semiconductor processing has an adhesive tape 15 formed by a base film 11 and an adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the adhesive layer 12, and the adhesive The layer 13 is attached to the back of the wafer. In addition, each layer can also be cut into a specific shape (pre-cut) in advance in accordance with the use step or device. Furthermore, the tape 10 for semiconductor processing of the present invention may be in the form of being cut per wafer, or a plurality of long sheets formed by cutting each wafer may be wound as Roll shape. The structure of each layer will be described below.

<Base film> The base film 11 is preferable in that it has uniform and isotropic expansibility and the wafer can be cut in all directions without being biased during the expansion step, and its material is not particularly limited. In general, cross-linked resins have a greater resilience to stretching than non-cross-linked resins, and have greater shrinkage stress when heat is applied in the stretched state after the expansion step. Therefore, the slack generated in the tape after the expansion step is removed by heat shrinkage, which is better in terms of making the tape tension and stably maintaining the interval (notch width) of each wafer. Even if it is a cross-linked resin, it is better to use a thermoplastic cross-linked resin. On the other hand, non-crosslinked resins have less resilience to stretching than crosslinked resins. Therefore, after the expansion step at a low temperature region such as -15°C to 0°C, the adhesive tape is not easily contracted due to the temporary relaxation and return to normal temperature during the pickup step and the mounting step, so that the adhesive layers attached to the wafer can be prevented from being mutually The contact is better. Even if it is a non-crosslinked resin, it is preferably an olefin-based non-crosslinked resin.

Examples of such thermoplastic cross-linked resins are, for example, ethylene-(meth)acrylic acid binary copolymers or terpolymers having ethylene-(meth)acrylic acid-alkyl (meth)acrylate as the main polymer constituent. Ionic polymer resin with metal ions crosslinked. These are particularly good in terms of uniform expansion and suitable for the expansion step, and exerting strong resilience upon heating by cross-linking. The metal ions contained in the ionic polymer resin are not particularly limited, but examples are zinc, sodium, and the like, and zinc ions are preferred because they have low dissolution properties and low pollution. Among the alkyl (meth)acrylates of the above terpolymer, an alkyl group having a carbon number of 1 to 4 is preferable in terms of a high elasticity and a strong force for wafer propagation. Examples of such alkyl (meth)acrylates are methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate Ester etc.

Moreover, as the above-mentioned thermoplastic cross-linked resin, in addition to the above-mentioned ionic polymer resin, it is also preferable for low-density polyethylene having a specific gravity of 0.910 or more to less than 0.930, or ultra-low density polyethylene having a specific gravity of not more than 0.910, and The resin selected from the ethylene-vinyl acetate copolymer is irradiated with energy beams such as electron beams and cross-linked. These thermoplastic cross-linked resins have a certain degree of uniform expansion due to the co-existence of cross-linked sites and non-cross-linked sites in the resin. Moreover, since it exerts strong resilience when heated, it is also preferable in terms of removing the relaxation of the tape caused by the expansion step. Since the molecular chain is almost free of chlorine, unnecessary tape after use is not burned even after incineration. Chlorinated aromatic hydrocarbons of dioxin or its analogs may occur, so the environmental load is also small. By adjusting the amount of energy rays irradiated to the polyethylene or ethylene-vinyl acetate copolymer, a resin with sufficiently uniform expandability can be obtained.

Furthermore, as the non-crosslinked resin, for example, a mixed resin composition of polypropylene and styrene-butadiene copolymer is exemplified.

As the polypropylene, for example, a homopolymer of propylene or a block-type or random propylene-ethylene copolymer can be used. Random propylene-ethylene copolymers are less rigid and preferred. When the content of the ethylene constituent unit in the propylene-ethylene copolymer is 0.1% by weight or more, the rigidity of the adhesive tape and the compatibility of the resins in the mixed resin composition are high. If the rigidity of the adhesive tape is appropriate, the cuttability of the wafer is improved, and when the compatibility between the resins is high, it is easy to stabilize the ejection amount of the extrusion. More preferably, it is 1% by weight or more. In addition, if the content rate of the ethylene constituent unit in the propylene-ethylene copolymer is 7% by weight or less, it is preferable in terms of easy stability polymerization of polypropylene. More preferably, it is 5% by weight or less.

As the styrene-butadiene copolymer, hydrogenated ones can also be used. When styrene-butadiene copolymer is hydrogenated, it has good compatibility with propylene and can prevent embrittlement and discoloration caused by oxidative deterioration of double bonds in butadiene. In addition, if the content rate of the styrene constituent unit in the styrene-butadiene copolymer is 5 wt% or more, it is preferred that the styrene-butadiene copolymer is easily polymerized stably. Furthermore, if it is 40% by weight or less, it is excellent in softness and expandability. More preferably, it is 25% by weight or less, and more preferably 15% by weight or less. As the styrene-butadiene copolymer, either a block copolymer or a random copolymer can be used. Random copolymers are preferred because the styrene phase is uniformly dispersed, which suppresses the rigidity from becoming too large and improves the expandability.

If the polypropylene content in the mixed resin composition is 30% by weight or more, it is preferable in terms of suppressing unevenness in the thickness of the base film. If the thickness is uniform, the expandability is easy to be isotropic, and it is easy to prevent the stress relaxation of the base film from becoming too large, and the distance between the wafers becomes small over time, so that the adhesive layers contact each other and re-melt. More preferably, it is 50% by weight or more. In addition, if the polypropylene content is 90% by weight or less, it is easy to appropriately adjust the rigidity of the base film. When the rigidity of the base film becomes too large, the force required to expand the base film becomes large, so the load of the device becomes large, and the wafer or the adhesive layer 13 may not be sufficiently expanded to be cut, so The important thing is to adjust properly. The lower limit of the content rate of the styrene-butadiene copolymer in the mixed resin composition is preferably 10% by weight or more, and it is easy to adjust the rigidity of the base film suitable for the device. If the upper limit is 70% by weight or less, it is better in suppressing unevenness in thickness, and more preferably 50% by weight or less.

In addition, in the example shown in FIG. 1, the base film 11 is a single layer, but it is not limited thereto, and may be a multiple-layer structure in which two or more resin layers are synthesized, or one or more resins of two or more layers may be laminated. If two or more resins are unified as cross-linking or non-cross-linking, it is better from the viewpoint that they can show their respective characteristics stronger. When combining cross-linking or non-cross-linking, they will make up for their shortcomings The aspect is better. The thickness of the base film 11 is not particularly limited as long as it has sufficient strength that it can be easily stretched without breaking during the expansion step of the tape 10 for semiconductor processing. For example, it is preferably about 50 to 300 μm, more preferably 70 to 200 μm.

As a method for manufacturing the plurality of base film 11, a conventionally known extrusion method, lamination method, etc. can be used. When using the layer method, the adhesive can also be interposed between the layers. As the adhesive, conventionally known adhesives can be used.

<Adhesive layer> The adhesive layer 12 may be formed by applying an adhesive composition on the base film 11. The adhesive layer 12 constituting the tape 10 for semiconductor processing of the present invention does not peel off from the adhesive layer 13 during dicing, has a degree of retention that does not cause defects such as wafer scattering, or is easy to contact with the adhesive during pickup It suffices for the characteristics of the layer 13 peeling.

In the adhesive tape 10 for semiconductor processing of the present invention, the structure of the adhesive composition constituting the adhesive layer 12 is not particularly limited, but in order to improve the pick-up property after dicing, it is preferably energy-ray curable, preferably after curing A material that can be easily peeled off from the adhesive layer 13. As an example, there is exemplified a polymer (A) as a base resin in the adhesive composition, the polymer (A) containing 60 mol% or more of an alkyl chain having a carbon number of 6 to 12 (Meth) acrylate, and has an energy ray curable carbon-carbon double bond with an iodine value of 5-30. In addition, the energy beam here refers to ionizing radiation such as ultraviolet rays or electron beams.

Among these polymers (A), if the amount of energy ray-curable carbon-carbon double bonds introduced is at least 5 in terms of iodine value, the effect of reducing the adhesion after energy ray irradiation is high. More preferably 10 or more. In addition, if the iodine value is 30 or less, the holding force of the wafer after the energy ray irradiation to the time before picking is high, which is preferable in that it is easy to expand the wafer gap when expanding immediately before the picking step. If the gap between the wafers can be sufficiently enlarged before the pickup step, the image recognition of each wafer at the time of pickup is easier, which is preferable because it is easy to pick up. In addition, if the amount of the carbon-carbon double bond introduced is 5 or more and 30 or less in terms of iodine value, the polymer (A) itself has stability and manufacturing is easy, which is preferable.

In addition, if the glass transition temperature of the polymer (A) is -70°C or higher, the heat resistance with heat irradiated with energy rays is better, and more preferably -66°C or higher. Moreover, if it is 15 degrees C or less, the wafer scattering prevention effect after dicing in a wafer with a rough surface state is better, and it is more preferably 0 degrees C or less, and still more preferably -28 degrees C or less.

The above polymer (A) can be produced by any method, but for example, an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond can be used, or an acrylic copolymer having a functional group or A methacrylic copolymer (A1) having a functional group is reacted with a compound (A2) having a functional group reactive with the functional group and having an energy ray-curable carbon-carbon double bond.

Among them, as the methacrylic copolymer (A1) having the above functional group, a monomer (A1-1) having a carbon-carbon double bond such as an alkyl acrylate or alkyl methacrylate and a carbon- It is obtained by copolymerizing a monomer (A1-2) with a carbon double bond and a functional group. Examples of the monomer (A1-1) include hexyl acrylate having a C 6-12 alkyl chain, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, Amyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or the same methyl group as decyl acrylate, lauryl acrylate, or a monomer having an alkyl chain carbon number of 5 or less Acrylic esters, etc.

In addition, the component having a carbon number of 6 or more in the alkyl chain in the monomer (A1-1) can reduce the peeling force of the adhesive layer and the adhesive layer, so it is preferable in terms of pick-up properties. In addition, components with a carbon number of 12 or less are superior in terms of low elasticity at room temperature and adhesion at the interface between the adhesive layer and the adhesive layer. When the adhesive force at the interface between the adhesive layer and the adhesive layer is high, when the adhesive tape is expanded and the wafer is cut, the interface deviation between the adhesive layer and the adhesive layer can be suppressed, so that the cuttability is improved.

In addition, as the monomer (A1-1), since a monomer having a larger alkyl chain carbon number is used, the glass transition temperature becomes lower, so by appropriately selecting, an adhesive composition having a desired glass transition temperature can be prepared Thing. In addition to the glass transition temperature, low molecular compounds having carbon-carbon double bonds such as vinyl acetate, styrene, and acrylonitrile can also be formulated for the purpose of improving various properties such as compatibility. In this case, these low-molecular compounds are formulated within a range of 5 mass% or less of the total mass of the monomer (A1-1).

On the other hand, the functional group possessed by the monomer (A1-2) can be exemplified by a carboxyl group, a hydroxyl group, an amine group, a cyclic anhydride group, an epoxy group, an isocyanate group, etc., as specific examples of the monomer (A1-2) Examples include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, acrylic acid 2-hydroxyalkyl esters, methacrylic acid 2-hydroxyalkyl esters, glycol monoacrylic acid Esters, glycol methacrylates, N-methylolacrylamide, N-methylolacrylamide, allyl alcohol, N-alkylaminoethyl acrylate, N methacrylate -Alkylaminoethyl esters, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate , Allyl glycidyl ether and so on.

In addition, in the compound (A2), when the functional group used in the compound (A1) is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, an epoxy group, an isocyanate group, etc. can be exemplified. When the hydroxyl group is exemplified by a cyclic acid anhydride group, isocyanate group, etc., when the functional group is an amine group, it can be exemplified by an epoxy group, isocyanate group, etc., when the functional group is an epoxy group, it can be exemplified by a carboxyl group, cyclic The acid anhydride group, the amine group, etc. are the same as those exemplified in the specific examples of the monomer (A1-2). In addition, as the compound (A2), a part of the isocyanate group of the polyisocyanate compound may be carbamateized with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond.

In addition, in the reaction between the compound (A1) and the compound (A2), by leaving unreacted functional groups, it is possible to produce a desired one with respect to characteristics such as acid value or hydroxyl value. When the OH group remains in such a way that the hydroxyl value of the polymer (A) becomes 5 to 100, the risk of pick-up leakage can be further reduced by reducing the adhesive force after irradiation with energy rays. In addition, when the COOH group remains so that the acid value of the polymer (A) is 0.5 to 30, the improvement effect after the adhesive layer after the expansion of the adhesive tape for semiconductor processing of the present invention is restored is preferably obtained. When the hydroxyl value of the polymer (A) is 5 or more, the effect of reducing the adhesive strength after irradiation with energy rays is better, and if it is 100 or less, the flowability of the adhesive after irradiation with energy rays is better. When the acid value is 0.5 or more, the recovery of the adhesive tape is better, and when it is 30 or less, the flowability of the adhesive is better.

In the synthesis of the polymer (A), ketone, ester, alcohol, and aromatic solvents can be used as the organic solvent for the reaction by solution polymerization, but toluene, ethyl acetate, and isopropyl alcohol are preferred , Benzyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone and other good solvents for general acrylic polymers, and solvents with a boiling point of 60 to 120 ℃, as the polymerization initiator, usually use α , α'-azobisisobutyronitrile and other azo bis series, benzoyl peroxide and other organic peroxides and other free radical generators. At this time, a catalyst and a polymerization inhibitor can be used in combination as needed, and by adjusting the polymerization temperature and polymerization time, a polymer (A) having a desired molecular weight can be obtained. In addition, for adjusting the molecular weight, mercaptan and carbon tetrachloride-based solvents are preferably used. In addition, the reaction is not limited to solution polymerization, and may be other methods such as bulk polymerization and suspension polymerization.

As described above, although the polymer (A) can be obtained, in the present invention, when the molecular weight of the polymer (A) is 300,000 or more, it is preferable in terms of improving the cohesive force. When the cohesive force is high, it has the effect of suppressing the interface deviation with the adhesive layer during expansion, and it is easy to transmit the tensile force to the adhesive layer. Therefore, it is preferable in view of the improvement of the division of the adhesive layer. When the molecular weight of the polymer (A) is 2 million or less, it is superior in the suppression of gelation during synthesis and coating. In addition, the molecular weight in this invention is a polystyrene conversion mass average molecular weight.

In addition, in the adhesive tape 10 for semiconductor processing of the present invention, the resin composition constituting the adhesive layer 12 may further have the compound (B) acting as a crosslinking agent in addition to the polymer (A). Examples are, for example, polyisocyanates, melamine/formaldehyde resins, and epoxy resins, which can be used alone or in combination of two or more. The compound (B) has a cross-linked structure resulting from the reaction with the polymer (A) or the base film, and after coating the adhesive composition, it can increase the content of the polymer (A) and (B) as the main components. The cohesive force of the adhesive.

The polyisocyanates are not particularly limited, and examples thereof include 4,4′-diphenylmethane diisocyanate, toluene diisocyanate, xylene diisocyanate, 4,4′-diphenyl ether diisocyanate, and 4,4′. -[2,2-bis(4-phenoxyphenyl)propane] diisocyanate and other aromatic isocyanates, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, Isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, ionic acid diisocyanate, amine acid triisocyanate, etc., specifically CORONATE L (Japan Made by Polyurethane Co., Ltd., trade name), etc. Specifically, as the melamine/formaldehyde resin, NIKALAC MX-45 (manufactured by Sanwa Chemical Co., Ltd., trade name), MELAN (manufactured by Hitachi Chemical Industry Co., Ltd., trade name), etc. can be used. As the epoxy resin, TETRAD-X (manufactured by Mitsubishi Chemical Corporation, trade name) and the like can be used. In the present invention, polyisocyanates are particularly preferably used.

The amount of the compound (B) added is preferably 0.1% by mass or more of the adhesive layer with respect to 100 parts by mass of the polymer (A) in terms of cohesive force. More preferably, it is 0.5 mass parts or more. Moreover, an adhesive layer of 10 parts by mass or less is preferable in terms of suppressing intense gelation during coating, and the workability of the preparation or application of the adhesive becomes good. More preferably, it is 5 mass parts or less.

In addition, in the present invention, the adhesive layer 12 may contain a photopolymerization initiator (C). The photopolymerization initiator (C) contained in the adhesive layer 12 is not particularly limited, and conventional ones can be used. Examples include benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, etc. Acetophenones such as benzophenone, acetophenone, diethoxyacetophenone, 2-anthraquinone, anthraquinones such as tert-butylanthraquinone, 2-chlorothioxanthone, Benzoin ether, benzoin isopropyl ether, biphenyl amide, 2,4,5-triarylimidazole dimer (Lophine dimer), acridine-based compounds, etc., these can be separated Or use in combination of two or more. The amount of the photopolymerization initiator (C) added is preferably 0.1 part by mass or more, more preferably 0.5 part by mass or more, based on 100 parts by mass of the polymer (A). In addition, the upper limit thereof is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less.

In addition, the energy ray-curable adhesive used in the present invention may be formulated with an adhesion-imparting agent, an adhesion-modulating agent, a surfactant, or other modifiers as needed. Moreover, an inorganic compound filler can also be added appropriately.

The adhesive layer 12 can be formed by a conventional adhesive layer forming method. For example, it is formed by applying the above adhesive composition on a specific surface of the base film 11, or applying the above adhesive composition to a separator (such as a plastic film coated with a release agent or After forming the adhesive layer 12 on the sheet, etc., the adhesive layer 12 can be formed on the base film 11 by transferring the adhesive layer 12 to a specific surface of the base. In addition, the adhesive layer 12 may have a single-layer form or a layered form.

The thickness of the adhesive layer 12 is not particularly limited. If the thickness is 2 μm or more, it is better in terms of contact adhesion, and more preferably 5 μm or more. If it is 15 μm or less, the pickup property is excellent, and more preferably 10 μm or less.

The average value of the differential value of the thermal deformation rate per 1°C between 40°C and 80°C measured by the thermomechanical characteristic testing machine at the temperature increase of the adhesive tape 15 in the MD (Machine Direction) direction and in the TD (Transverse Direction ) In the direction, the sum of the average value of the differential value of the thermal deformation rate per 1°C between 40°C and 80°C measured by the thermomechanical characteristic testing machine at a temperature rise is a negative value, that is, it does not reach 0. The MD direction is the traveling direction when the film is formed, and the TD direction is the direction perpendicular to the MD direction.

The average value of the differential value of the thermal deformation rate per 1°C between 40°C and 80°C between 40°C and 80°C measured by the thermomechanical characteristic tester in the MD direction of the adhesive tape 15 in the MD direction and the difference in the TD direction The sum of the average value of the differential value of the thermal deformation rate per 1°C between 40°C and 80°C measured by the thermomechanical characteristic testing machine at the time of heating becomes a negative value, and the semiconductor can be heated by a low temperature for a short time. The processing tape 10 shrinks. Therefore, when using a method of heating and shrinking the portion of the semiconductor processing tape 10 that surrounds a pair of warm air nozzles, even if the expansion amount is reduced without any heating shrinkage, the relaxation caused by the expansion can be removed in a short time. It can maintain proper width of incision.

The thermal deformation rate can be measured according to JIS K7197:2012 and the amount of deformation due to temperature is calculated from the following formula (1).　　 Thermal deformation rate TMA (%) = (distortion amount of sample length / length of sample before measurement) × 100 (1) 　　 Furthermore, the amount of deformation represents the expansion direction of the sample as positive and the shrinkage direction as negative.

The differential value of the thermal deformation rate is the curve in the MD direction or the curve in the TD direction in FIG. 9, and the sum of the average value of the differential value in the MD direction and the average value of the differential value in the TD direction becomes a negative value, meaning that 40 ℃ The overall shrinkage behavior of the adhesive tape between ～80℃. In order to make the sum of the average value of the differential value in the MD direction and the average value of the differential value in the TD direction negative, a stretching step is added after the resin film is formed, as long as the adhesion is adjusted according to the type of resin constituting the adhesive tape 15 The thickness of the adhesive tape 15 or the amount of stretching in the MD direction or the TD direction may be sufficient. As a method of stretching the adhesive tape in the TD direction, there are a method using a tenter, a method of blow forming (blowing), a method of using an expansion roll, etc. As a method of stretching in the MD direction, there are The method of stretching when the die is ejected, the method of stretching in the conveying roller, etc. As a method for obtaining the adhesive tape 15 of the present invention, any method can be used.

<Adhesive layer> In the adhesive tape 10 for semiconductor processing of the present invention, the adhesive layer 13 is after the wafer is bonded and diced, and when the wafer is picked up, it is peeled off from the adhesive layer 12 and attached to the wafer. Moreover, it is used as an adhesive when fixing a wafer to a substrate or a lead frame.

The adhesive layer 13 is not particularly limited, as long as it is a film-like adhesive generally used for wafers, and examples include those containing a thermoplastic resin and a thermally polymerizable component. The above-mentioned thermoplastic resin used in the adhesive layer 13 of the present invention is preferably a resin having thermoplasticity or a resin having thermoplasticity in an uncured state and heated to form a cross-linked structure, which is not particularly limited, but as an example, for example It is a thermoplastic resin with a weight average molecular weight of 5000 to 200,000 and a glass transition temperature of 0 to 150°C. As another aspect, a thermoplastic resin having a weight average molecular weight of 100,000 to 1,000,000 and a glass transition temperature of -50 to 20°C is exemplified.

The former thermoplastic resin may be exemplified by polyimide resins, polyamide resins, polyether amide resins, polyamide amide resins, polyester resins, polyester amide resins, and phenoxy resins. 、Polyphenol resin, polyether resin, polyphenylene sulfide resin, polyether ketone resin, etc. Among them, polyimide resin and phenoxy resin are preferably used. As the latter thermoplastic resin, polymerization containing functional groups is preferably used. Thing.

Polyimide resin can be obtained by condensation reaction of tetracarboxylic dianhydride and diamine by conventional methods. That is, in an organic solvent, use equivalent molar or substantially equivalent molar tetracarboxylic dianhydride and diamine (the order of addition of each component is arbitrary), and add at a reaction temperature of 80°C or lower, preferably 0 to 60°C.成反应。 In response. As the reaction progresses, the viscosity of the reaction solution slowly rises, producing polyamic acid, which is a precursor of polyimide. The polyamide acid is depolymerized by heating at a temperature of 50 to 80°C, whereby the molecular weight can also be adjusted. Polyimide resin can be obtained by dehydration ring-closure of the above reactant (polyamide acid). The dehydration loop can be carried out by the thermal loop method of heat treatment and the chemical loop method using a dehydrating agent.

The tetracarboxylic dianhydride used as the raw material of the polyimide resin is not particularly limited, and for example, 1,2-(ethylidene)bis(trimellitic anhydride), 1,3-(trimethylene)bis (Trimellitic anhydride), 1,4-(tetramethylene) bis(trimellitic anhydride), 1,5-(pentamethylene) bis(trimellitic anhydride), 1,6-(hexamethylene Methyl)bis(trimellitic anhydride), 1,7-(heptamethylene)bis(trimellitic anhydride), 1,8-(octamethylene)bis(trimellitic anhydride), 1,9 -(Numethylene)bis(trimellitic anhydride), 1,10-(decamethylene)bis(trimellitic anhydride), 1,12-(dodecylmethylene)bis(trimellitic anhydride ), 1,16-(hexamethylene)bis(trimellitic anhydride), 1,18-(octadecylene methylene)bis(trimellitic anhydride), pyromellitic dianhydride, 3,3 ',4,4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propanedi Anhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4 -Dicarboxyphenyl)ethane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxybenzene Base) dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride Anhydride, 3,4,3',4'-benzophenone tetracarboxylic dianhydride, 2,3,2',3'-benzophenone tetracarboxylic dianhydride, 3,3,3',4 '-Benzophenone tetracarboxylic dianhydride, 1,2,5,6-naphthalene tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 2,3,6,7- Naphthalene tetracarboxylic dianhydride, 1,2,4,5-naphthalene tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloro Naphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9, 10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3',4' -Biphenyltetracarboxylic dianhydride, 3,4,3',4'-biphenyltetracarboxylic dianhydride, 2,3,2',3'-biphenyltetracarboxylic dianhydride, bis(3,4 -Dicarboxyphenyl)dimethylsilane dianhydride, bis(3,4-dicarboxyphenyl)methylphenylsilane dianhydride, bis(3,4-dicarboxyphenyl)diphenylsilane dianhydride, 1,4-bis(3,4-dicarboxyphenyldimethylsilyl)phthalic anhydride, 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetramethyl Dicyclohexane dianhydride, p-phenylene bis (trimellitic anhydride), ethyl tetracarboxylic dianhydride, 1,2,3,4-butane tetracarboxylic dianhydride, decalin-1,4 ,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dicarboxylic acid Anhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutane tetracarboxylic acid Acid dianhydride, bis(hang-bicyclo[2,2,1]heptane-2,3-dicarboxylic dianhydride, bicyclic-[2,2,2]-oct-7-ene-2,3,5 ,6-Tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 2,2-bis[4-(3,4-dicarboxyphenyl)phenyl ] Hexafluoropropane dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy)diphenyl sulfide dianhydride, 1,4-bis(2-hydroxyhexafluoroisopropyl)benzene bis( Trimellitic anhydride), 1,3-bis(2-hydroxyhexafluoroisopropyl)benzenebis(trimellitic anhydride), 5-(2,5-dioxotetrahydrofuranyl)-3-methyl-3-cyclohexene-1 , 2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride, etc., one of these or two or more of them can be used in combination.

(式中，R1及R2表示碳原子數1～30之二價烴基，各可相同亦可不同，R3及R4表示一價烴基，各可相同亦可不同，m為1以上之整數)。Moreover, the diamine used as a raw material of polyimide is not particularly limited, and for example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diamine group can be preferably used Diphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-di Aminodiphenylmethane, 4,4'-diaminodiphenylethermethane, bis(4-amino-3,5-dimethylphenyl)methane, bis(4-amino-3,5 -Diisopropylphenyl)methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyl Difluoromethane, 3,3'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl ash, 4,4'-diaminodiphenyl ash, 3,3'-di Amino diphenyl sulfide, 3,4'-diamino diphenyl sulfide, 4,4'-diamino diphenyl sulfide, 3,3'-diamino diphenyl ketone, 3 ,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis(3-aminophenyl)propane, 2,2'-(3,4' -Diaminodiphenyl)propane, 2,2-bis(4-aminophenyl)propane, 2,2-bis(3-aminophenyl)hexafluoropropane, 2,2-(3,4 '-Diaminodiphenyl) hexafluoropropane, 2,2-bis(4-aminophenyl) hexafluoropropane, 1,3-bis(3-aminophenoxy)benzene, 1,4- Bis(3-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 3,3'-(1,4-phenylenebis(1-methylethylene )) bisaniline, 3,4'-(1,4-phenylene bis(1-methylethylene)) bisaniline, 4,4'-(1,4-phenylene bis(1-methyl Ethylidene)) bisaniline, 2,2-bis(4-(3-aminophenoxy)phenyl)propane, 2,2-bis(4-(4-aminophenoxy)phenyl ) Propane, 2,2-bis(4-(3-aminophenoxy)phenyl)hexafluoropropane, 2,2-bis(4-(4-aminophenoxy)phenyl)hexafluoropropane , Bis(4-(3-aminophenoxy)phenyl) sulfide, bis(4-(4-aminophenoxy)phenyl) sulfide, bis(4-(3-aminophenoxy)phenyl Aromatic diamines such as phenyl) phenanthrene, bis(4-(4-aminophenoxy)phenyl) phenanthrene, 3,5-diaminobenzoic acid, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1 ,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane , 1,2-Diaminocyclohexane, diaminopolysiloxane represented by the following general formula (1), 1,3-bis(aminomethyl)cyclohexane, SAN TECHNO Chemical Co., Ltd. JEFFAMINE D-230, D-400, D-2000, D-4000, ED-600, ED-900, Aliphatic diamines such as polyoxyalkylene diamines such as ED-2001 and EDR-148 may be used alone or in combination of two or more. The glass transition temperature of the polyimide resin is preferably 0 to 200°C, and the weight average molecular weight is preferably 10,000 to 200,000.

(In the formula, R1 and R2 represent a divalent hydrocarbon group having 1 to 30 carbon atoms, which may be the same or different, and R3 and R4 represent monovalent hydrocarbon groups, which may be the same or different, and m is an integer of 1 or more).

The phenoxy resin which is one of the preferred thermoplastic resins other than the above is preferably a resin obtained by a method of reacting various bisphenols with epichlorohydrin or a method of reacting liquid epoxy resin with bisphenol, as the bisphenol Examples are bisphenol A, bisphenol bisphenol AF, bisphenol AD, bisphenol F, and bisphenol S. Because the structure of phenoxy resin is similar to epoxy resin, it has good compatibility with epoxy resin, and can give good adhesion to the adhesive film.

As the phenoxy resin used in the present invention, for example, a resin having a repeating unit represented by the following general formula (2) is exemplified.

In the above general formula (2), X represents a single bond or a divalent linking group. Examples of the divalent linking group include alkylene, phenylene, -O-, -S-, -SO- or -SO ₂ -. Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, more preferably -C(R1)(R2)-. R1 and R2 represent a hydrogen atom or an alkyl group, and the alkyl group is preferably a linear or branched alkyl group having 1 to 8 carbon atoms, and examples thereof include methyl, ethyl, n-propyl, isopropyl, and isooctyl. , 2-ethylhexyl, 1,3,3-trimethylbutyl, etc. In addition, the alkyl group may be substituted with a halogen atom, for example, trifluoromethyl. X is preferably alkylene, -O-, -S-, fluorenyl, or -SO ₂ -, more preferably alkylene, -SO ₂ -. Among them, -C(CH ₃ ) ₂ -, -CH(CH ₃ )-, -CH ₂ -, -SO ₂ -are preferred, and -C(CH ₃ ) ₂ -, -CH(CH ₃ )- are more preferred , -CH ₂ -, particularly preferably -C(CH ₃ ) ₂ -.

If the phenoxy resin represented by the above general formula (2) has repeating units, it may be a resin having a plurality of repeating units with different X of the above general formula (2), or may be composed only of X being the same repeating unit . In the present invention, a resin composed only of X as the same repeating unit is preferred.

In addition, when the phenoxy resin represented by the above general formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, the compatibility with the thermally polymerizable component can be improved, and a uniform appearance or characteristics can be imparted.

If the mass average molecular weight of the phenoxy resin is 5000 or more, it is superior in terms of film formability. More preferably, it is more than 10,000, and more preferably, it is more than 30,000. In addition, if the mass average molecular weight is 150,000 or less, it is preferable in terms of fluidity during heat pressing and compatibility with other resins. More preferably, it is less than 100,000. In addition, if the glass transition temperature is -50°C or higher, the film formability is better, preferably 0°C or higher, and more preferably 50°C or higher. If the glass transition temperature is 150°C, the adhesion of the adhesive layer 13 when the crystal grains are bonded is excellent, preferably 120°C or less, and more preferably 110°C or less.

On the other hand, examples of the functional group in the polymer containing a functional group include, for example, glycidyl group, acryl group, methacryl group, hydroxyl group, carboxyl group, isocyanurate group, amine group, amide group Among others, glycidyl is preferred.

Examples of the high-molecular-weight component containing functional groups include, for example, (meth)acrylic copolymers containing functional groups such as glycidyl groups, hydroxyl groups, and carboxyl groups.

As the (meth)acrylic copolymer, for example, (meth)acrylate copolymer, acrylic rubber, etc. can be used, and acrylic rubber is preferred. Acrylic rubber is mainly composed of acrylate, and is mainly composed of a copolymer of butyl acrylate and acrylonitrile or a copolymer of ethyl acrylate and acrylonitrile.

When a glycidyl group is contained as a functional group, the amount of the repeating unit containing a glycidyl group is preferably 0.5 to 6.0% by weight, more preferably 0.5 to 5.0% by weight, and particularly preferably 0.8 to 5.0% by weight. The repeating unit containing a glycidyl group is a constituent monomer of a (meth)acrylic acid copolymer containing a glycidyl group, and specifically is glycidyl acrylate or glycidyl methacrylate. If the amount of the repeating unit containing the glycidyl group is within this range, the adhesive force can be ensured and gelation can be prevented.

Examples of the constituent monomers of the (meth)acrylic acid copolymer other than glycidyl acrylate and glycidyl methacrylate are, for example, ethyl (meth)acrylate, butyl (meth)acrylate, etc. Used alone or in combination of two or more. In the present invention, ethyl (meth)acrylate means ethyl acrylate and/or ethyl methacrylate. The mixing ratio when using the functional monomer in combination may be determined in consideration of the glass transition temperature of the (meth)acrylic copolymer. When the glass transition temperature is above -50°C, the film formability is excellent, and it is preferable in that it can be suppressed from excessive touch at normal temperature. If the touch adhesion at room temperature is excessive, the handling of the adhesive layer becomes difficult. More preferably, it is above -20°C, and still more preferably above 0°C. In addition, if the glass transition temperature is 30°C or lower, the adhesion of the adhesive layer when the crystal grains are bonded is better, and more preferably 20°C or lower.

When the above monomers are polymerized to produce a high molecular weight component containing a functional monomer, the polymerization method is not particularly limited, and methods such as bead polymerization and solution polymerization can be used, and bead polymerization is preferred. .

In the present invention, if the weight average molecular weight of the high molecular weight component containing the functional monomer is 100,000 or more, the film formability is better, more preferably 200,000 or more, and still more preferably 500,000 or more. In addition, when the weight average molecular weight is adjusted to 2,000,000 or less, the adhesive layer at the time of bonding of the crystal grains is better in terms of improving the heating fluidity. When the heating fluidity of the adhesive layer during grain bonding is improved, the adhesion of the adhesive layer and the adherend can be improved, the adhesion can be improved, and the concavities and convexities of the adherend can be easily embedded and holes can be suppressed. It is more preferably 1,000,000 or less, and still more preferably 800,000 or less. If it is 500,000 or less, a greater effect can be obtained.

The thermally polymerizable component is not particularly limited as long as it is polymerized by heat, and examples thereof include, for example, a glycidyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, and an isocyanurate group. , Amine group, amide group and other functional group compounds and trigger materials, these can be used alone or in combination of two or more, but when considering the heat resistance of the adhesive layer, it is preferable to contain together by heat Hardens and brings thermosetting resins, curing agents and accelerators for continuous use. Examples of thermosetting resins are, for example, epoxy resins, acrylic resins, polysiloxane resins, phenol resins, thermosetting polyimide resins, polyurethane resins, melamine resins, urea resins, etc., especially based on availability For the adhesive layer excellent in heat resistance, workability, and reliability, epoxy resin is preferably used.

The epoxy resin is not particularly limited as long as it is hardened and has a continuous role. Bifunctional epoxy resins such as bisphenol A epoxy resin, phenol novolac epoxy resin, or cresol novolac epoxy resin can be used. Phenolic novolac epoxy resin, etc. It is also generally applicable to polyfunctional epoxy resins, glycidyl amine type epoxy resins, heterocyclic ring-containing epoxy resins or alicyclic epoxy resins.

Examples of the bisphenol A type epoxy resin are EPICOTE series (EPICOTE 807, EPICOTE 815, EPICOTE 825, EPICOTE 827, EPICOTE 828, EPICOTE 834, EPICOTE 1001, EPICOTE 1004, EPICOTE 1007, EPICOTE 1009 manufactured by Mitsubishi Chemical Corporation. ), DER-330, DER-301, DER-361 manufactured by Dow Chemical Company and YD8125, YDF8170 manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd. Examples of the phenol novolac-type epoxy resin include EPICOTE 152, EPICOTE 154 manufactured by Mitsubishi Chemical Corporation, EPPN-201 manufactured by Nippon Kayaku Co., Ltd., and DEN-438 manufactured by Dow Chemical Company. Examples of o-cresol novolac epoxy resins are EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027, or Nippon Steel & Sumitomo Corporation YDCN701, YDCN702, YDCN703, YDCN704, etc. manufactured by Chemical Co., Ltd. Examples of the above multifunctional epoxy resins are Epon 1031S manufactured by Mitsubishi Chemical Corporation, ARALDITE 0163 manufactured by Ciba Special Chemicals Corporation, DENACOL EX-611, EX-614, EX-614B manufactured by NAGASE CHEMTEX Corporation, EX-622, EX-512, EX-521, EX-421, EX-411, EX-321, etc. Examples of the amine-type epoxy resins include EPICOTE 604 manufactured by Mitsubishi Chemical Corporation, YH-434 manufactured by Toto Chemical Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., and Sumitomo Chemical Industry Co., Ltd. ELM-120 manufactured by a limited company. Examples of the heterocyclic ring-containing epoxy resin include ARALDITE PT810 manufactured by Ciba Special Chemicals Co., Ltd., ERL4234 manufactured by UCC, ERL4299, ERL4221, ERL4206, and the like. These epoxy resins can be used alone or in combination of two or more.

In order to harden the above thermosetting resin, an appropriate additive may be added. Examples of such additives include, for example, hardeners, hardening accelerators, catalysts, and the like, and auxiliary catalysts may be used as needed when adding catalysts.

When an epoxy resin is used for the thermosetting resin, an epoxy resin hardener or a hardening accelerator is preferably used, and these are more preferably used in combination. Examples of the hardener include phenol resin, dicyanodiamide, boron trifluoride complex, organic hydrazine compound, amines, polyamide resin, imidazole compound, urea or thiourea compound, polythiol compound, Polysulfide resin, acid anhydride, light/ultraviolet hardener with mercapto group at the end. These can be used alone or in combination of two or more. Among them, the boron trifluoride complex is exemplified by boron trifluoride-amine complex with various amine compounds (preferably primary amine compounds), and the organic hydrazine compound is exemplified by dihydrazine isophthalate.

Examples of the phenol resins include novolak-type phenol resins such as phenol novolak resins, phenol aralkyl resins, cresol novolak resins, third butyl phenol novolak resins, nonylphenol novolak resins, and soluble phenol novolak resins. Polyoxystyrene, such as phenol resin, polyparaoxystyrene, etc. Among them, a phenol compound having at least two phenolic hydroxyl groups in the molecule is preferred.

Examples of the phenolic compound having at least two phenolic hydroxyl groups in the molecule are, for example, phenol novolak resin, cresol novolak resin, third butylphenol novolak resin, dicyclopentadiene cresol novolak resin, diphenol Cycloprene-phenol novolak resin, xylene modified phenol novolak resin, naphthol novolak resin, triphenol novolak resin, tetraphenol novolak resin, bisphenol A novolak resin, poly-p-vinylphenol Resin, phenol aralkyl resin, etc. Furthermore, among these phenol resins, phenol novolak resin and phenol aralkyl resin are particularly preferred, which can improve connection reliability.

Examples of amines are chain aliphatic amines (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N,N-dimethylpropylamine, benzyldimethylamine, 2-(dimethyl (Amino)phenol, 2,4,6-tris(dimethylaminomethyl)phenol, m-xylenediamine, etc.), cyclic aliphatic amines (N-aminoethylpiperazine, bis(3- Methyl-4-aminocyclohexyl)methane, bis(4-aminocyclohexyl)methane, diaminodiphenylmethane (mensendiamine), isophoronediamine, 1,3-bis(aminomethyl) ) Cyclohexane, etc.), heterocyclic amines (piperazine, N,N-dimethylpiperazine, triethylenediamine, melamine, guanamine, etc.), aromatic amines (o-phenylenediamine, 4,4' -Diaminodiphenylmethane, diamino, 4,4'-diaminodiphenyl sulfide, etc.), polyamidoamine resin (preferably polyamidoamine, condensate of dimer acid and polyamine ), imidazole compounds (2-phenyl-4,5-dihydroxymethylimidazole, 2-methylimidazole, 2,4-dimethylimidazole, 2-n-heptadecylimidazole, 1-cyanoethyl -2-undecyl imidazolium, trimellitate, epoxy, imidazole adducts, etc.), urea or thiourea compounds (N,N-dialkylurea compounds, N,N-dialkyl Thiourea compounds, etc.), polythiol compounds, polythioether resins with mercapto groups at the ends, acid anhydrides (tetrahydrophthalic anhydride, etc.), light/ultraviolet hardeners (diphenylphosphonium hexafluorophosphate, tribenzene Base phosphonium hexafluorophosphate, etc.).

The curing accelerator is not particularly limited as long as it can cure the thermosetting resin, and examples include imidazoles, dicyanodiamide derivatives, dicarboxylic acid dihydrazine, triphenylphosphine, and tetrabenzene Phosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo[5.4.0]undecene-7-tetraphenylborate Wait. Examples of imidazoles are imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl 2-methylimidazole, 1-benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxydimethyl Imidazole, 2-phenyl-4,5-dihydroxymethylimidazole, etc.

The content of the adhesive layer of the hardener or hardening accelerator for epoxy resin is not particularly limited, and the optimum content varies with the type of hardener or hardening accelerator.

The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the epoxy group in the epoxy resin component is equivalent to 1 equivalent, and the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents. It is more preferably 0.8 to 1.2 equivalents. That is, if the blending ratio of the two deviates from the aforementioned range, sufficient curing reaction cannot proceed, and the characteristics of the adhesive layer are likely to be deteriorated. For other thermosetting resins and hardeners, in one embodiment, the hardener is 0.5-20 parts by mass relative to 100 parts by mass of the thermosetting resin, and in other embodiments, the hardener is 1-10 parts by mass. . The content of the hardening accelerator is preferably less than the content of the hardener, and the hardening accelerator is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 0.95 parts by mass relative to 100 parts by mass of the thermosetting resin. By adjusting to the aforementioned range, sufficient hardening reaction can be assisted. The catalyst content is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 1.0 parts by mass relative to 100 parts by mass of the thermosetting resin.

In addition, the adhesive layer 13 of the present invention can be appropriately formulated with fillers according to its use. Thereby, it is possible to improve the slicability of the adhesive layer in the uncured state, improve the handling, adjust the melt viscosity, impart thixotropy, and further impart the thermal conductivity and improve the adhesion of the adhesive layer in the cured state. The filler used in the present invention is preferably an inorganic filler. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whiskers. , Boron nitride, crystalline silicon oxide, amorphous silicon oxide, antimony oxide, etc. Moreover, these can be used individually or in mixture of 2 or more types.

In addition, among the above inorganic fillers, from the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silicon oxide, amorphous silicon oxide, and the like are preferably used. Further, from the viewpoint of adjusting the melt viscosity or imparting thixotropy, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystalline oxidation are preferred Silicon, amorphous silicon oxide. In addition, from the viewpoint of improving the sliceability, aluminum oxide and silicon oxide are preferably used.

If the content of the filler is 30% by mass or more, it is superior in wire bondability. In wire bonding, it is preferable to adjust the storage elastic modulus of the adhesive layer after the bonding of the wafer to the range of 20 to 1000 MPa at 170° C. When the filler content is 30% by mass or more, it is easy to apply the adhesive The storage elastic modulus of the layer after hardening is adjusted to this range. In addition, when the content ratio of the filler is 75% by mass or less, the film-forming property and the adhesive fluidity of the adhesive layer at the time of grain bonding are excellent. When the heating fluidity of the adhesive layer during grain bonding is improved, the adhesion between the adhesive layer and the adherend is good to improve the adhesion, and it is easy to embed the irregularities of the adherend to suppress holes. More preferably, it is 70% by mass or less, and more preferably 60% by mass or less.

The adhesive layer of the present invention may contain two or more fillers having different average particle diameters as the filler. In this case, compared to the case of using a single filler, in the raw material mixture before filming, it is easy to prevent the viscosity increase when the filler content is high or the viscosity decrease when the filler content is low, and it is easy to obtain good film formation It can optimally control the fluidity of the unhardened adhesive layer, and it is easy to obtain excellent adhesion after the adhesive layer is hardened.

Furthermore, in the adhesive layer of the present invention, the average particle size of the filler is preferably 2.0 μm or less, more preferably 1.0 μm or less. When the average particle diameter of the filler is 2.0 μm or less, the film becomes thinner. The thin film here means a thickness of 20 μm or less. Moreover, when it is 0.01 μm or more, the dispersibility is good. Furthermore, from the viewpoint of preventing the viscosity of the raw material mixture before filming from increasing or decreasing, optimally controlling the fluidity of the uncured adhesive layer, and improving the adhesive strength of the adhesive layer after curing, it is preferable to include the average particle size in The first filler in the range of 0.1 to 1.0 μm and the second filler in which the average particle size of the primary particle size is in the range of 0.005 to 0.03 μm. It is preferable to include the first filler having an average particle size in the range of 0.1 to 1.0 μm and 99% or more of the particles distributed in the range of 0.1 to 1.0 μm, and the average particle size of the primary particle size in the range of 0.005 to 0.03 μm The second filler with a particle size of 0.005 to 0.1 μm distributed within 99% or more of the particles.　　 The average particle diameter in the present invention means that 50% by volume of particles have a D50 value of a cumulative volume distribution curve having a diameter smaller than this value. In the present invention, the average particle diameter or D50 value is measured by a laser diffraction method using, for example, Malvern Mastersizer 2000 manufactured by Malvern Instruments. In this technique, the particle size in the dispersion is based on any application of Fraunhofer or Mie theory and is measured using the diffraction of laser light. In the present invention, it is about using the Mie theory or the modified Mie theory for non-spherical particles to measure the average particle diameter or D50 value of incident laser light at 0.02 to 135°.

In one aspect of the invention, the entire adhesive composition constituting the adhesive layer 13 may contain 10 to 40% by mass of a thermoplastic resin having a weight average molecular weight of 5000 to 200,000 and 10 to 40% by mass of thermal polymerization Sexual ingredients and 30 to 75% by mass filler. In this embodiment, the filler content may be 30 to 60% by mass or 40 to 60% by mass. In addition, the mass average molecular weight of the thermoplastic resin may be 5,000 to 150,000, or 10,000 to 100,000. In another aspect, the entire adhesive composition constituting the adhesive layer 13 may contain 10 to 20% by mass of a thermoplastic resin with a weight average molecular weight of 200,000 to 2,000,000, and 20 to 50% by mass of a thermally polymerizable component and 30 ~75% by mass filler. In this embodiment, the filler content may be 30 to 60% by mass or 30 to 50% by mass. In addition, the mass average molecular weight of the thermoplastic resin may be 200,000 to 1,000,000, or 200,000 to 800,000.　　By adjusting the blending ratio, the storage elastic modulus and fluidity of the adhesive layer 13 after hardening can be optimized, and there is a tendency that the high-temperature heat resistance can be sufficiently obtained.

In the adhesive tape 10 for semiconductor processing of the present invention, the adhesive layer 13 may be formed by directly or indirectly laminating a film previously formed (hereinafter referred to as an adhesive film) on the base film 11. The temperature during lamination is preferably in the range of 10 to 100°C, and a linear pressure of 0.01 to 10 N/m is applied. Moreover, these adhesive films may be those in which the adhesive layer 13 is formed on the release film. In this case, the release film may be peeled off after lamination, or it may be directly used as a cover film of the tape 10 for semiconductor processing. Peel off when bonding wafers.

The aforementioned adhesive film may be laminated on the entire surface of the adhesive layer 12, or may be laminated on the adhesive layer 12 in advance to be cut into a film corresponding to the shape of the bonded wafer (pre-cut). In this way, when laminating the adhesive film corresponding to the wafer, as shown in FIG. 3, there is an adhesive layer 13 on the portion bonded to the wafer W, and there is no adhesive layer 13 only on the portion bonded to the ring frame 20. Adhesive layer 12. In general, since the adhesive layer 13 is not easy to peel off from the adherend, the pre-cut adhesive film can be used to make the ring frame 20 and the adhesive layer 12 adhere to each other, and it is not easy to produce a ring frame when the tape after use is peeled off. The effect of 20 paste residues.

<Usage> The tape 10 for semiconductor processing of the present invention can be used in a method of manufacturing a semiconductor device including an expansion step of cutting the adhesive layer 13 by expansion at least. Therefore, other steps or order of steps are not particularly limited. For example, it can be preferably used in the following semiconductor device manufacturing methods (A) to (E).

Manufacturing method of semiconductor device (A) 　　 A manufacturing method of semiconductor device, which includes the following steps: 　　(a) The step of attaching surface protection tape to the surface of a wafer forming a circuit pattern, 　　(b) Grinding the back surface of the aforementioned wafer back surface Polishing step, 　　 (c) the step of bonding the adhesive film of the adhesive layer of the adhesive tape for semiconductor processing to the back of the wafer with the wafer heated at 70-80°C, 　　(d) The step of peeling the surface protection tape from the surface of the wafer, 　　(e) irradiates the predetermined portion of the wafer with laser light, and forms a modified region by multiphoton absorption inside the wafer, 　　(f) by making The step of expanding the tape for semiconductor processing, and cutting the wafer and the adhesive film along a cutting line to obtain a plurality of wafers with an adhesive film, 　　(g) The portion overlapping with the wafer is heat-shrinked to remove the slack generated in the expansion step and maintain the gap between the wafers, and (h) to pick up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape step.　　 The manufacturing method of this semiconductor device is a method using stealth slicing.

Manufacturing method of semiconductor device (B) 　　 A manufacturing method of semiconductor device, which includes the following steps: 　　(a) The step of attaching surface protection tape to the surface of the wafer on which the circuit pattern is formed, 　　(b) Grinding the back surface of the aforementioned wafer back surface In the polishing step, 　　(c) The step of bonding the adhesive film of the adhesive layer that has been bonded to the tape for semiconductor processing on the backside of the wafer with the wafer heated at 70-80°C. 　　(d) The step of peeling the surface protection tape on the wafer surface, 　　(e) is a step of irradiating laser light along the dividing line from the wafer surface and cutting into individual wafers, 　　(f) by expanding the tape for semiconductor processing, and The step of cutting the adhesive film corresponding to the wafer to obtain a plurality of wafers with an adhesive film, 　　(g) by heating and shrinking the portion of the tape for semiconductor processing that does not overlap with the wafer to remove the foregoing The step of relaxing the expansion step and maintaining the gap between the wafers, and (h) the step of picking up the wafer of the adhesive layer from the adhesive layer of the tape for semiconductor processing.　　 The manufacturing method of this semiconductor device is a method using a fully cut laser slicing.

Manufacturing method of semiconductor device (C) 　　 A manufacturing method of semiconductor device, which includes the following steps: 　　(a) The step of attaching surface protection tape on the surface of a wafer forming a circuit pattern, 　　(b) Grinding the back surface of the aforementioned wafer back surface In the polishing step, 　　(c) The step of bonding the adhesive film of the adhesive layer that has been bonded to the tape for semiconductor processing on the backside of the wafer with the wafer heated at 70-80°C. 　　(d) The step of peeling the surface protection tape on the surface of the wafer, 　　(e) cutting the wafer along the dividing line using a slicing blade, and cutting it into individual wafers, 　　(f) by expanding the tape for semiconductor processing, so that The step of cutting the adhesive film corresponding to the wafer to obtain a plurality of wafers with an adhesive film, 　　 (g) by heating and shrinking the portion of the tape for semiconductor processing that does not overlap with the wafer, the expansion is removed The slack generated in the step and the step of maintaining the gap between the wafers, and (h) the step of picking up the aforementioned wafer of the adhesive layer from the adhesive layer of the semiconductor processing tape.　　 The manufacturing method of this semiconductor device is a method of slicing using a fully cut blade.

Semiconductor device manufacturing method (D) 　　A semiconductor device manufacturing method, which includes the following steps: 　　(a) Using a dicing blade to cut a circuit pattern-formed wafer to a depth less than the wafer thickness along a line to be cut Steps: 　　(b) the step of attaching the surface protection tape on the surface of the wafer, 　　(c) the back grinding step of grinding the back of the wafer, 　　(d) with the wafer heated at 70-80°C The step of bonding the adhesive film on the adhesive layer of the adhesive tape for semiconductor processing on the back side, 　　 (e) the step of peeling the surface protection tape from the surface of the wafer, 　　 (f) by using the semiconductor processing A step of expanding the adhesive tape to cut the adhesive film corresponding to the wafer to obtain a plurality of wafers with an adhesive film, 　　(g) by heating and shrinking the portion of the semiconductor processing tape that does not overlap with the wafer The step of removing the slack generated in the expansion step and maintaining the gap between the wafers, and (h) the step of picking up the wafer with the adhesive layer from the adhesive layer of the adhesive tape for semiconductor processing.　　 The manufacturing method of this semiconductor device is a method of slicing with a half-cut blade.

Method of manufacturing a semiconductor device (E) 　　 A method of manufacturing a semiconductor device, which includes the following steps: 　　(a) the step of attaching surface protection tape to the surface of a wafer forming a circuit pattern, 　　(b) the plan to divide the aforementioned wafer Partially irradiated with laser light, and the step of forming a modified region by multiphoton absorption inside the wafer, 　　(c) Grinding the backside grinding step of the wafer backside, 　　(d) State of heating the wafer at 70-80℃ Next, the step of attaching the adhesive layer of the tape for semiconductor processing to the back of the wafer, 　　(e) the step of peeling the surface protective tape from the surface of the wafer, 　　(f) by expanding the tape for semiconductor processing , The step of cutting the wafer and the adhesive layer along the cutting line to obtain a plurality of wafers with an adhesive film, 　　 (g) by making the semiconductor processing tape not overlap with the wafer The step of partially shrinking by heating to remove the slack generated in the expansion step and maintain the gap between the wafers, and (h) the step of picking up the wafer of the adhesive layer from the adhesive layer of the adhesive tape for semiconductor processing.　　 The manufacturing method of this semiconductor device is a method using stealth slicing.

<Usage method> 　　 The method of using the tape when the semiconductor processing tape 10 of the present invention is used in the above-described semiconductor device manufacturing method (A) will be described with reference to FIGS. 2 to 5. First, as shown in FIG. 2, a surface protection tape 14 for circuit pattern protection containing an ultraviolet curable component in an adhesive is attached to the surface of the wafer W forming the circuit pattern, and a back grinding step of grinding the back surface of the wafer W is performed.

After the back grinding step is completed, as shown in FIG. 3, after the wafer W is placed on the heating table 25 of the wafer mounting machine with the front side facing, the semiconductor processing tape 10 is attached to the back of the wafer W. The tape 10 for semiconductor processing used here is laminated with an adhesive film pre-cut (pre-cut) corresponding to the shape of the bonded wafer W, on the surface bonded to the wafer W, on the adhesive layer 13 The adhesive layer 12 is exposed around the exposed area. The exposed adhesive layer 13 of the semiconductor processing tape 10 is attached to the back surface of the wafer W, and the exposed portion of the adhesive layer 12 around the adhesive layer 13 is attached to the ring frame 20. At this time, the heating table 25 is set at 70 to 80° C. in advance, thereby performing heat bonding. In this embodiment, a semiconductor having an adhesive tape 15 formed by the base film 11 and the adhesive layer 12 provided on the base film 11 and an adhesive layer 13 provided on the adhesive layer 12 is used The adhesive tape 10 for processing, but an adhesive tape and a film-like adhesive may be used separately. In this case, first, a film-like adhesive is attached to the back surface of the wafer to form an adhesive layer, and an adhesive layer of an adhesive tape is attached to the adhesive layer. At this time, the adhesive tape 15 of the present invention is used as the adhesive tape.

Next, the wafer W to which the tape 10 for semiconductor processing is bonded is carried out from the heating table 25 and, as shown in FIG. 4, is placed on the suction table 26 with the tape 10 for semiconductor processing facing the side. Next, self-adsorption is fixed above the wafer W of the adsorption stage 26, and the energy ray light source 27 is used to irradiate the substrate surface side of the surface protection tape 14 with ultraviolet rays of, for example, 1000 mJ/cm ^{2 to} make the surface protection tape 14 face the wafer W Then, the force is reduced, and the surface protective tape 14 is peeled off from the surface of the wafer W.

Next, as shown in FIG. 5, laser light is irradiated to the portion to be divided of the wafer W, and the modified region 32 is formed inside the wafer W by multiphoton absorption.

Next, as shown in FIG. 6( a ), the semiconductor processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the step 21 of the expansion device with the base film 11 side facing down.

Next, as shown in FIG. 6(b), in a state where the ring frame 20 is fixed, the hollow cylindrical jacking member 22 of the expansion device is raised to expand (expand) the tape 10 for semiconductor processing. As the expansion condition, the expansion speed is, for example, 5 to 500 mm/sec, and the expansion amount (lifting amount) is, for example, 5 to 25 mm. In this manner, by stretching the tape 10 for semiconductor processing in the radial direction of the wafer W, the wafer W is cut in units of wafers 34 starting from the modified region 32 as a starting point. At this time, although the adhesive layer 13 is restrained from being stretched (deformed) by expansion due to expansion and does not cause breakage, the position between the wafers 34 is broken due to the concentration of tension due to expansion of the adhesive tape. Therefore, as shown in FIG. 6(c), the adhesive layer 13 is cut together with the wafer W. Thereby, a plurality of wafers 34 with the adhesive layer 13 can be obtained.

Next, as shown in FIG. 7, the jacking member 22 returns to its original position, and a step for removing the slack of the semiconductor processing tape 10 that occurred in the previous expansion step and stably maintaining the interval between the wafers 34 is performed. In this step, for example, in the annular heat-shrinkable region 28 between the region where the wafer 34 exists in the semiconductor processing tape 10 and the ring frame 20, a warm air nozzle 29 is used to blow warm air at 40 to 120°C to make the substrate film 11 Heat shrinks, and the tape 10 for semiconductor processing is in a state of being opened with the pin. Subsequently, the adhesive layer 12 is subjected to energy ray hardening treatment or thermosetting treatment, etc., so that the adhesive force of the adhesive layer 12 to the adhesive layer 13 is weakened, and then the wafer 34 is picked up.

In addition, although the adhesive tape 10 for semiconductor processing of the present embodiment is configured to include the adhesive layer 13 on the adhesive layer 12, the adhesive layer 13 may not be provided. In this case, the wafer may be bonded to the adhesive layer 12 to cut only the wafer, or when the adhesive tape for semiconductor processing is used, the adhesive film and the crystal produced in the same manner as the adhesive layer 13 The circles are bonded together on the adhesive layer 12 to cut the wafer and the adhesive film. <Examples> Next, in order to clarify the effect of the present invention, examples and comparative examples will be described in detail, but the present invention is not limited to those examples.

[Preparation of tape for semiconductor processing] (1) Preparation of base film <base film A> A zinc ion polymer of ethylene-methacrylic acid-ethyl methacrylate copolymer synthesized by a radical polymerization method ( Resin pellets with a methacrylic acid content of 15%, ethyl methacrylate content of 5%, a softening point of 72°C, a melting point of 90°C, a density of 0.96g/cm ³ , and a zinc ion content of 5% by mass) are melted at 230°C and extruded The machine is formed into a long film with a thickness of 150 μm. Subsequently, the long film was stretched in the TD direction so as to have a thickness of 90 μm to produce a base film A.

<Base film B> 　　 The base film B was produced in the same manner as the base film A except that the long film was set to 180 μm and stretched in the TD direction so that the long film had a thickness of 90 μm.

<Base film C> 　　 The base film C was produced in the same manner as the base film A except that the long film thickness was 215 μm and the long film was stretched in the TD direction so as to have a thickness of 90 μm.

<Base film D> Zinc ion polymer of ethylene-methacrylic acid-isobutyl methacrylate copolymer synthesized by radical polymerization method (methacrylic acid content 11%, isobutyl methacrylate content 9 %, softening point 64 ℃, melting point 83 ℃, density 0.95 g/cm ³ , zinc ion content 4% by mass) resin pellets are melted at 230 ℃, and formed into a long film with a thickness of 150 μm using an extruder. Subsequently, the long film was stretched in the TD direction so as to have a thickness of 90 μm to produce a base film D.

<Substrate film E> 　　Mixed resin pellets of hydrogenated styrene-based thermoplastic elastomer and homopolypropylene (PP) at a blending ratio of 52:48 were melted at 200°C and formed into a long film with a thickness of 150 μm using an extruder . Subsequently, the long film was stretched in the TD direction so as to have a thickness of 90 μm to produce a base film E.

＜Base film F＞ 　　Mixed resin pellets mixed with hydrogenated styrene-based thermoplastic elastomer and homopolypropylene (PP) at a blending ratio of 64:36 were melted at 200°C and formed into a long film with a thickness of 150 μm using an extruder . Subsequently, the long film was stretched in the TD direction so as to have a thickness of 90 μm to produce a base film F.

<Base film G> A base film G was produced in the same manner as the base film A except that the long film thickness was 150 μm, and the long film was stretched in the MD direction so as to have a thickness of 90 μm.

<Base film H> 　　The base film H was produced in the same manner as the base film D except that the long film was set to 150 μm and stretched in the MD direction so that the long film had a thickness of 90 μm.

<Base film I> The base film I was produced in the same manner as the base film A except that the thickness of the long film was set to 90 μm, and the long film was not stretched.

<Base film J> 　　The base film J was prepared in the same manner as the base film D except that the long film thickness was set to 90 μm and the long film was not stretched.

<Base film K> 　　The base film K was produced in the same manner as the base film E except that the long film thickness was 90 μm, and the long film was not stretched.

<Base film L> The base film K was produced in the same manner as the base film F except that the long film thickness was 90 μm, and the long film was not stretched.

<Base film M> 　　 The base film M was produced in the same manner as the base film A except that the long film thickness was set to 110 μm and the long film was stretched in the TD direction so as to have a thickness of 90 μm.

<Base film N> 　　The base film N was produced in the same manner as the base film A except that the long film thickness was 120 μm and the long film was stretched in the TD direction so as to have a thickness of 90 μm.

(2) Preparation of acrylic copolymer As functional acrylic polymer (A1), 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid are prepared. A copolymer with a ratio of hexyl ester of 60 mol% and a mass average molecular weight of 700,000. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value became 25 to prepare an acrylic copolymer having a glass transition temperature of -50°C, a hydroxyl value of 10 mgKOH/g, and an acid value of 5 mgKOH/g.

(3) The preparation of the adhesive composition is made of epoxy resin "1002" (made by Mitsubishi Chemical Corporation, solid bisphenol A epoxy resin, epoxy equivalent 600) 40 parts by mass, epoxy resin "806" ( Product name manufactured by Mitsubishi Chemical Corporation, bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, hardener "Dyhard 100SF" (product name manufactured by DEGUSSA, dicyanodiamide) 5 quality Parts, silica filler "SO-C2" (ADMAFINE Co., Ltd. trade name, average particle size 0.5 μm) 200 parts by mass and silica filler "AEROSIL R972" (Japan AEROSIL Co., Ltd. trade name, primary particle size (Average particle diameter of 0.016 μm) MEK was added to 3 parts by mass of the composition and stirred and mixed to prepare a uniform composition. To this, 100 parts by mass of phenoxy resin "PKHH" (trade name made by INCHEM, mass average molecular weight 52,000, glass transition temperature 92°C) and coupling agent "KBM-802" (made by Shin-Etsu Polysilicone Co., Ltd.) were added. Trade name, mercaptopropyltrimethoxysilane) 0.6 parts by mass and "CUREZOL 2PHZ-PW" as a hardening accelerator (trade name manufactured by Shikoku Chemical Co., Ltd., 2-phenyl-4,5-dihydroxymethyl (Imidazole, decomposition temperature 230°C) 0.5 parts by mass, stirred and mixed until uniform. Furthermore, it was filtered with a 100-mesh filter and defoamed by vacuum to obtain a varnish of the adhesive composition.

<Example 1> For 100 parts by mass of the acrylic copolymer, 5 parts by mass of CORONATE L (manufactured by Japan Polyurethane) as a polyisocyanate was added, and Esacure KIP 150 (as a photopolymerization initiator was added (Lamberti) 3 parts by mass of the resulting mixture was dissolved in ethyl acetate and stirred to prepare an adhesive composition. Next, the adhesive composition was coated on a release liner made of a polyethylene terephthalate film subjected to mold release so that the thickness after drying became 10 μm, and after drying at 110° C. for 3 minutes, It is bonded to the base film to make an adhesive sheet that forms an adhesive layer on the base film.

Next, the above-mentioned adhesive composition was coated on a release liner made of a polyethylene terephthalate film subjected to mold release so that the thickness after drying became 20 μm, and dried at 110° C. for 5 minutes to produce An adhesive film of an adhesive layer is formed on the release liner.

The adhesive sheet is cut into a shape shown in FIG. 3 and the like so as to fit the ring frame so as to cover the opening. Then, the adhesive film is cut into a shape as shown in FIG. 3 and the like so as to cover the back surface of the wafer. Next, as shown in FIG. 3 etc., the adhesive layer side of the adhesive sheet and the adhesive layer side of the adhesive film are bonded together in such a manner that a portion exposing the adhesive layer 12 is formed around the adhesive film to fabricate a semiconductor process Use adhesive tape.

<Examples 2-8, Comparative Examples 1-6> 　　Except for using the base film described in Table 1, the semiconductor processing for Examples 2-8 and Comparative Examples 1-6 was produced by the same method as Example 1 tape.

The adhesive tape of the semiconductor processing tape of Examples and Comparative Examples was cut into a length of 24 mm (direction for measuring the amount of deformation) and a width of 5 mm (direction perpendicular to the direction of measuring the amount of deformation) to prepare sample pieces. For the obtained sample piece, a thermomechanical property testing machine (manufactured by RIGAKU Co., Ltd., trade name: TMA8310) was used to measure the deformation caused by the temperature in the two directions of MD and TD by the tensile load method under the following measurement conditions.　　 (Measurement conditions) 　　 Measurement temperature: -60～100℃ 　　 Heating rate: 5℃/min 　　 Measurement load: 19.6mN 　　 Ambient gas: Nitrogen environment (100ml/min) 　　 Sampling: 0.5s 　　 Distance between fixtures: 20mm

Next, the thermal deformation rate is calculated from the following formula (1), the differential value of the thermal deformation rate per 1°C in the MD direction and the TD direction between 40°C and 80°C is calculated, and the sum is calculated. The results are shown in Tables 1 and 2.　　 Thermal deformation rate TMA (%) = (displacement of sample length / sample length before measurement) × 100 (1)

[Evaluation of Misidentification of Wafers] 　　The wafers were cut into wafers for each of the semiconductor processing tapes of the foregoing examples and the comparative examples by the method shown below, and the misidentification of the wafers was evaluated.

The following steps are implemented: 　　(a) the step of attaching surface protection tape on the surface of the wafer forming the circuit pattern, 　　(b) irradiating laser light to the predetermined portion of the wafer, and absorbing the multi-photon inside the wafer The step of forming the modified region, 　　(c) grinds the backside grinding step of the back surface of the wafer, 　　(d), while heating the wafer at 70-80°C, attaches the tape for semiconductor processing to the back surface of the wafer The step of the adhesive layer, 　　(e) step of peeling the surface protective tape from the surface of the wafer, 　　(f) by spreading the tape for semiconductor processing, so that the wafer and the adhesive layer are along the cutting line And the step of cutting to obtain a plurality of wafers with adhesive film, 　　 (g) by making the portion of the semiconductor processing tape that does not overlap with the wafer (annular area between the area where the wafer exists and the ring frame) ) Heating and shrinking to remove (f) the slack generated in the expansion step and maintain the gap between the wafers, and (h) the step of picking up the aforementioned wafer of the adhesive layer from the adhesive layer of the semiconductor processing tape.

Furthermore, in step (d), the wafer is bonded to the tape for semiconductor processing in such a manner that the cutting line of the wafer is along the MD and TD directions of the base film.

(f) In the step, using DDS2300 made by DISCO Co., Ltd., the ring frame for dicing attached to the tape for semiconductor processing is pressed by the expansion ring of DDS2300 made by DISCO, and the wafer of tape for semiconductor processing is attached The part of the outer periphery of the joint portion that does not overlap with the wafer is pressed against the circular jacking member to expand. As a condition of step (f), the expansion amount is adjusted so that the expansion speed is 300 mm/sec and the expansion height is 10 mm. Here, the expansion amount refers to the amount of change in the relative position of the ring frame and the jacking member before and after pressing. The wafer size becomes 1×1mm square.

(g) The step is performed at room temperature, the expansion speed is 1 mm/sec, and the expansion height is 10 mm, and the heat shrinkage treatment is performed under the following conditions. [Condition 1] 　　 Heater set temperature: 220°C 　　 Hot air volume: 40L/min 　　 Interval between heater and semiconductor processing tape: 20mm 　　 Heater rotation speed: 7°/sec 　　 [Condition 2] 　　 Heater set temperature: 220°C 　　Quantity: 40L/min 　　 Interval between heater and tape for semiconductor processing: 20mm 　　 Heater rotation speed: 5°/sec

For the semiconductor processing tapes of Examples 1 to 8 and Comparative Examples 1 to 6, picking up after the step (g) above will not be able to correctly identify the wafer because the boundary with the adjacent wafer cannot be discriminated and the wafer cannot be picked up As a misidentification of the wafer, the frequency of occurrence was evaluated. In condition (1) and condition (2), the frequency of chip misrecognition is 0%, and the good product is evaluated as "◎", and the frequency of chip misrecognition in condition 2 is less than 1%, as the good product. "○" evaluation, the occurrence frequency of chip misrecognition in condition 2 is more than 1% and less than 3% as an allowable product. The evaluation is "△", and the occurrence frequency of chip misrecognition in condition 1 and condition 2 is 3% The above are evaluated as "X" as defective products. The results are shown in Tables 1 and 2. Also, during the evaluation, as shown in FIG. 8, the periphery of the wafer 50a on the rightmost end of FIG. 8 in the MD direction of the adhesive tape is the same as the leftmost end of FIG. 8 in the MD direction of the adhesive tape. 100 wafers each were picked for the evaluation of the periphery of the wafer 50b, the periphery of the non-defective wafer 51 at the two ends in the TD direction of the adhesive tape, and the periphery of the wafer 52 at the center.

As shown in Table 1, the adhesive tapes for semiconductor processing of Examples 1 to 8 are based on the heat per 1°C between 40°C and 80°C measured by the thermomechanical property testing machine in the MD direction of the adhesive tape at elevated temperature The sum of the average value of the differential value of the deformation rate and the average value of the differential value of the thermal deformation rate per 1°C between 40°C and 80°C measured by the thermomechanical characteristic tester in the TD direction at elevated temperature is The negative value makes it easy to determine the boundary with the adjacent wafer, and it is a good result that the frequency of misrecognition of the wafer is low in the image recognition when the wafer is picked up.

On the other hand, the tapes for semiconductor processing of Comparative Examples 1 to 6, as shown in Table 2, are measured in the MD direction of the adhesive tape at a temperature of 40°C to 80°C per temperature measured by a thermomechanical characteristic tester at elevated temperature The average value of the differential value of the thermal deformation rate at ℃ and the average value of the differential value of the thermal deformation rate per 1°C between 40°C and 80°C measured by the thermomechanical characteristic tester at elevated temperature in the TD direction The sum is not a negative value, so it becomes a poor result of the high frequency of chip misidentification.

10‧‧‧ Adhesive tape for semiconductor processing 11‧‧‧ Base film 12‧‧‧ Adhesive layer 13‧‧‧ Adhesive layer 14‧‧‧ Surface protection tape 15‧‧‧ Adhesive tape 20‧‧‧Ring frame 21‧ ‧ Step 22 ‧ ‧ ‧ Lifting member 25 ‧ ‧ ‧ Heating table 26 ‧ ‧ ‧ Adsorption table 27 ‧ ‧ ‧ Energy line light source 28 ‧ ‧ ‧ Heat shrinkage area 29 ‧ ‧ ‧ Warm air nozzle 32 ‧ ‧ ‧ Modified area 34‧‧‧ Wafer 50, 50a, 50b, 51, 52‧‧‧ Wafer W‧‧‧ Wafer

FIG. 1 is a cross-sectional view schematically showing the structure of a semiconductor processing tape according to an embodiment of the present invention.　　 Figure 2 is a cross-sectional view showing the state where the surface protection tape is attached to the wafer. FIG. 3 is a cross-sectional view for explaining the steps of attaching the wafer and the ring frame to the semiconductor processing tape of the embodiment of the present invention. FIG. 4 is a cross-sectional view illustrating the step of peeling the surface protection tape from the wafer surface. FIG. 5 is a cross-sectional view showing a state where a modified region is formed on a wafer by laser processing. FIG. 6(a) is a cross-sectional view showing a state where the semiconductor processing tape of the embodiment of the present invention is mounted on an expansion device. (b) is a cross-sectional view showing a process of cutting a wafer into wafers by expanding tape for semiconductor processing. (c) is a cross-sectional view showing the expanded semiconductor processing tape, adhesive layer, and wafer.　　 FIG. 7 is a cross-sectional view for explaining the heat shrinking step.　　 FIG. 8 is an explanatory diagram showing the measurement locations of the notch width in the evaluation of Examples and Comparative Examples. FIG. 9 is an example of measurement results of thermal deformation rate.

10‧‧‧Tape for semiconductor processing

11‧‧‧ Base film

12‧‧‧Adhesive layer

13‧‧‧ Adhesive layer

15‧‧‧ Adhesive tape

Claims (3)

An adhesive tape for semiconductor processing, characterized by having an adhesive tape having a substrate film and an adhesive layer formed on at least one side of the substrate film The average value of the differential value of the thermal deformation rate per 1°C measured between 40°C and 80°C at the time of temperature rise and the 40°C to 80°C measured by the thermomechanical characteristic tester at the temperature rise in the TD direction The average value of the differential value of the thermal deformation rate per 1°C is a negative value. The adhesive tape for semiconductor processing according to claim 1, wherein an adhesive layer is laminated on the adhesive layer side. The tape for semiconductor processing as claimed in claim 1 or 2 is used for blade cutting, laser slicing, or stealth dicing using full laser cutting and half cutting.

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