TWI693267B - Adhesive and connecting structure - Google Patents

Adhesive and connecting structure Download PDF

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TWI693267B
TWI693267B TW104116412A TW104116412A TWI693267B TW I693267 B TWI693267 B TW I693267B TW 104116412 A TW104116412 A TW 104116412A TW 104116412 A TW104116412 A TW 104116412A TW I693267 B TWI693267 B TW I693267B
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adhesive
anisotropic conductive
solder particles
mass
acrylic resin
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TW104116412A
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Chinese (zh)
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TW201610056A (en
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青木正治
蟹澤士行
波木秀次
石神明
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日商迪睿合股份有限公司
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Priority claimed from JP2014107167A external-priority patent/JP6430148B2/en
Priority claimed from JP2014107168A external-priority patent/JP6419457B2/en
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
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    • C08G59/24Di-epoxy compounds carbocyclic
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    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
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    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062Copolymers with monomers not covered by C09J133/06
    • C09J133/066Copolymers with monomers not covered by C09J133/06 containing -OH groups
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08Homopolymers or copolymers of acrylic acid esters
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J133/20Homopolymers or copolymers of acrylonitrile
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    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/181Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
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    • H01ELECTRIC ELEMENTS
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    • H01R12/00Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70Coupling devices
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    • H05K2201/10106Light emitting diode [LED]

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Abstract

本發明提供一種對氧化膜具有優異之接著性及散熱性之接著劑、及使用其之連接構造體。 The present invention provides an adhesive having excellent adhesion and heat dissipation to an oxide film, and a connection structure using the same.

接著劑含有環氧化合物、陽離子觸媒、及包含丙烯酸與具有羥基之丙烯酸酯之丙烯酸樹脂。丙烯酸樹脂中之丙烯酸與環氧化合物反應,產生丙烯酸樹脂之島13與環氧化合物之海12的連結,並且使氧化膜11a之表面變粗糙而增強與環氧化合物之海12的投錨效應,而且熔解所含有之焊料粒子1,藉此可與電極10之間形成金屬結合,提高接著劑與電極10之接著力,並且進一步提高自金屬結合面之散熱特性。 The adhesive contains an epoxy compound, a cationic catalyst, and an acrylic resin containing acrylic acid and an acrylate having a hydroxyl group. The acrylic acid in the acrylic resin reacts with the epoxy compound to produce a connection between the island 13 of the acrylic resin and the sea 12 of the epoxy compound, and roughens the surface of the oxide film 11a to enhance the anchoring effect with the sea 12 of the epoxy compound, and The solder particles 1 contained therein are melted, thereby forming a metal bond with the electrode 10, improving the adhesion between the adhesive and the electrode 10, and further improving the heat dissipation characteristics from the metal bonding surface.

Description

接著劑及連接構造體 Adhesive and connecting structure

本發明係關於一種將電子零件彼此電性連接之接著劑,特別是關於一種將發熱之電子零件與配線基板連接並且使電子零件之熱散熱的接著劑、及電子零件與配線基板連接而成之連接構造體。 The invention relates to an adhesive that electrically connects electronic components to each other, in particular to an adhesive that connects a heat-generating electronic component to a wiring board and dissipates heat of the electronic component, and an electronic component is connected to the wiring board Connect the structure.

本申請案係以2014年5月23日於日本申請之日本專利申請編號特願2014-107167及於2014年5月23日於日本申請之日本專利申請編號特願2014-107168為基礎而主張優先權者,該等申請案係以參照之形式引用於本申請案。 This application is based on the Japanese Patent Application No. Japanese Patent Application No. 2014-107167 filed in Japan on May 23, 2014 and the Japanese Patent Application No. Japanese Patent Application No. 2014-107168 filed on May 23, 2014. If the right is right, these applications are cited in this application by reference.

作為將LED等晶片零件構裝至電路基板之方法,廣泛地採用使用使導電性粒子分散於環氧系接著劑並成形為膜狀之異向性導電膜(ACF:Anisotropic Conductive Film)進行倒裝晶片構裝之方法(例如,參照專利文獻1、2)。根據該方法,藉由異向性導電膜之導電性粒子達成晶片零件與電路基板之間之電性連接,故而可縮短連接製程,可提高生產效率。 As a method of assembling wafer components such as LEDs on a circuit board, flip-chip mounting using anisotropic conductive film (ACF: Anisotropic Conductive Film) in which conductive particles are dispersed in an epoxy adhesive and formed into a film shape is widely used A method of wafer mounting (for example, refer to Patent Documents 1 and 2). According to this method, the electrical connection between the chip component and the circuit board is achieved by the conductive particles of the anisotropic conductive film, so the connection process can be shortened and the production efficiency can be improved.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2010-24301號公報 [Patent Document 1] Japanese Patent Application Publication No. 2010-24301

[專利文獻2]日本特開2012-186322號公報 [Patent Document 2] Japanese Unexamined Patent Publication No. 2012-186322

於近年來之LED製品中,有為了實現低成本化而將電路基板之配線之金屬自Au、Ag變更為Al、Cu者、及使用於PET(Polyethylene terephthalate)基材上形成有ITO(Indium Tin Oxide)配線之透明基板者。 In recent years, LED products have changed the metal of the wiring of the circuit board from Au, Ag to Al, Cu in order to achieve low cost, and ITO (Indium Tin) is formed on PET (Polyethylene terephthalate) substrate Oxide) Wiring transparent substrate.

然而,於Al、Cu等金屬配線或ITO配線之表面,形成有鈍態、氧化被膜等氧化物,故而先前之環氧系接著劑係接著較為困難。 However, on the surface of metal wirings such as Al and Cu or ITO wirings, oxides such as a passive state and an oxide film are formed. Therefore, the previous epoxy-based adhesive system is difficult to adhere.

又,除接著較為困難以外,為了充分地自LED製品等發熱之電子零件散熱,必須於接著劑中含有散熱用材料,因含有散熱用材料而接著劑成分變少,從而難以充分地保持接著力。 In addition to the difficulty in adhesion, in order to fully dissipate heat from electronic components that generate heat, such as LED products, it is necessary to include a material for heat dissipation in the adhesive. Since the material for heat dissipation is included, the component of the adhesive is reduced, which makes it difficult to maintain the adhesion sufficiently. .

又,若於接著劑中含有用作散熱用材料之無機填料或金屬填料,則該等無機填料或金屬填料成為間隔件,無法使接著劑層變薄。 In addition, if the adhesive contains an inorganic filler or a metal filler used as a material for heat dissipation, the inorganic filler or the metal filler becomes a spacer, and the adhesive layer cannot be thinned.

本發明係解決上述先前技術之課題者,目的在於提供一種具有對氧化膜優異之接著性及自散熱之電子零件向外部之優異的散熱性之接著劑、及使用其之連接構造體。 The present invention is to solve the above-mentioned problems of the prior art, and an object of the present invention is to provide an adhesive having excellent adhesion to an oxide film and excellent heat dissipation from an electronic component that radiates heat to the outside, and a connection structure using the same.

為了解決上述課題,本發明之接著劑係將發熱之電子零件與具有配線圖案之基板接著者,其特徵在於由含有焊料粒子之樹脂黏合劑所構成。 In order to solve the above-mentioned problems, the adhesive of the present invention connects a heat-generating electronic component to a substrate having a wiring pattern, and is characterized by being composed of a resin binder containing solder particles.

又,本發明之連接構造體之特徵在於包括:基板,其具有配線圖案;異向性導電膜,其形成於配線圖案之電極上;及發熱之電子零件,其構裝於異向性導電膜上;且異向性導電膜含有樹脂黏合劑及焊料粒子,上述焊料粒子與上述電子零件之端子部分金屬結合。 In addition, the connection structure of the present invention is characterized by including: a substrate having a wiring pattern; an anisotropic conductive film formed on the electrode of the wiring pattern; and a heat-generating electronic component built on the anisotropic conductive film On; and the anisotropic conductive film contains a resin binder and solder particles, the solder particles and the metal part of the terminal part of the electronic component.

又,為了解決上述課題,本發明之接著劑之特徵在於,含有脂環式環氧化合物或氫化環氧化合物、陽離子觸媒、重量平均分子量為50000~900000之丙烯酸樹脂、及焊料粒子,丙烯酸樹脂包含0.5~10wt%之丙烯酸、及0.5~10wt%之具有羥基之丙烯酸酯。 In order to solve the above-mentioned problems, the adhesive of the present invention is characterized by containing an alicyclic epoxy compound or a hydrogenated epoxy compound, a cationic catalyst, an acrylic resin having a weight average molecular weight of 50,000 to 900,000, and solder particles, acrylic resin Contains 0.5~10wt% acrylic acid and 0.5~10wt% acrylic acid ester with hydroxyl group.

又,本發明之連接構造體之特徵在於包括:基板,其具有表面被設為氧化物之配線圖案;異向性導電膜,其形成於上述配線圖案之電極上;及電子零件,其構裝於異向性導電膜上;且異向性導電膜係異向性導電接著劑之硬化物,該異向性導電接著劑含有脂環式環氧化合物或氫化環氧化合物、陽離子觸媒、重量平均分子量為50000~900000之丙烯酸樹脂、導電性粒子、及焊料粒子,上述丙烯酸樹脂包含0.5~10wt%之丙烯酸、及0.5~10wt%之具有羥基之丙烯酸酯。 Moreover, the connection structure of the present invention is characterized by including: a substrate having a wiring pattern whose surface is made of oxide; an anisotropic conductive film formed on the electrode of the above-mentioned wiring pattern; and an electronic component, its structure On the anisotropic conductive film; and the anisotropic conductive film is a cured product of anisotropic conductive adhesive, the anisotropic conductive adhesive contains an alicyclic epoxy compound or hydrogenated epoxy compound, cationic catalyst, weight Acrylic resins, conductive particles, and solder particles having an average molecular weight of 50,000 to 900,000. The acrylic resins include 0.5 to 10% by weight of acrylic acid and 0.5 to 10% by weight of acrylates with hydroxyl groups.

根據本發明,樹脂黏合劑內之焊料粒子與電子零件之端子部分金屬結合,藉此於接著劑層與電子零件之間獲得優異之接著力,並且使產生於電子零件內之熱擴散至金屬結合之焊料粒子,可更有效率地散熱。又,根據本發明,藉由調配包含丙烯酸、及具有羥基之丙烯酸酯之丙烯酸樹脂,而可對氧化膜以硬化物整體接著,獲得優異之接著力,並且可藉由焊料粒子而充分地確保接著強度。 According to the present invention, the solder particles in the resin adhesive bond to the metal of the terminal part of the electronic part, thereby obtaining excellent adhesion between the adhesive layer and the electronic part, and diffusing the heat generated in the electronic part to the metal bond The solder particles can dissipate heat more efficiently. In addition, according to the present invention, by blending an acrylic resin containing acrylic acid and an acrylate having a hydroxyl group, the oxide film can be bonded as a whole with a cured product, and excellent adhesive force can be obtained, and the bonding can be sufficiently ensured by solder particles. strength.

1‧‧‧焊料粒子 1‧‧‧ solder particles

1a‧‧‧熔解焊料 1a‧‧‧melted solder

1b‧‧‧端面(金屬結合面) 1b‧‧‧End face (metal joint face)

2‧‧‧導電性粒子 2‧‧‧ conductive particles

3‧‧‧樹脂黏合劑 3‧‧‧Resin adhesive

10‧‧‧電極 10‧‧‧electrode

11‧‧‧配線 11‧‧‧Wiring

11a‧‧‧氧化膜 11a‧‧‧Oxide film

12‧‧‧環氧化合物之海 12‧‧‧Sea of Epoxy Compounds

13‧‧‧丙烯酸樹脂之島 13‧‧‧ Island of acrylic resin

21‧‧‧基板 21‧‧‧ substrate

22‧‧‧配線圖案 22‧‧‧Wiring pattern

23‧‧‧發光元件 23‧‧‧Lighting element

24‧‧‧n電極 24‧‧‧n electrode

25‧‧‧p電極 25‧‧‧p electrode

26‧‧‧凸塊 26‧‧‧Bump

30‧‧‧異向性導電膜 30‧‧‧Anisotropic conductive film

50‧‧‧異向性導電接著劑 50‧‧‧Anisotropic conductive adhesive

51‧‧‧配線基板 51‧‧‧Wiring board

52‧‧‧LED晶片 52‧‧‧LED chip

53‧‧‧熱加壓工具 53‧‧‧Hot press tool

54‧‧‧工具 54‧‧‧Tool

55‧‧‧試驗輥 55‧‧‧Test roller

61‧‧‧氮化鋁粒子 61‧‧‧Aluminum nitride particles

62‧‧‧Cu粒子 62‧‧‧Cu particles

63‧‧‧金剛石粒子 63‧‧‧ Diamond particles

圖1係表示將環氧化合物設為海、及將丙烯酸樹脂設為島時之海島模型之剖面圖。 FIG. 1 is a cross-sectional view of a sea island model when an epoxy compound is used as a sea and an acrylic resin is used as an island.

圖2係說明焊料粒子之剖面圖。 2 is a cross-sectional view illustrating solder particles.

圖3係表示發光裝置之一例之剖面圖。 3 is a cross-sectional view showing an example of a light-emitting device.

圖4係表示90度剝離強度試驗之概要之剖面圖。 Fig. 4 is a cross-sectional view showing the outline of a 90-degree peel strength test.

圖5係用以說明LED構裝樣品之製作步驟之圖。 FIG. 5 is a diagram for explaining the manufacturing steps of the LED mounting samples.

圖6係表示晶片剪切強度試驗之概要之剖面圖。 6 is a cross-sectional view showing the outline of a wafer shear strength test.

圖7係說明使用金剛石粒子作為散熱用材料之情形時之圖。 FIG. 7 is a diagram illustrating the case of using diamond particles as a material for heat dissipation.

圖8係說明使用銅粉作為散熱用材料之情形時之圖。 FIG. 8 is a diagram illustrating the case of using copper powder as a material for heat dissipation.

圖9係說明使用氮化鋁粉作為散熱用材料之情形時之圖。 FIG. 9 is a diagram illustrating the case of using aluminum nitride powder as a material for heat dissipation.

圖10係說明樹脂黏合劑之散熱特性之圖。 FIG. 10 is a diagram illustrating the heat dissipation characteristics of the resin adhesive.

圖11係用以說明彎曲試驗之圖。 Fig. 11 is a diagram for explaining a bending test.

圖12係用以說明彎曲試驗之圖。 Fig. 12 is a diagram for explaining a bending test.

以下,一面參照圖式,一面根據下述順序詳細地對本發明之實施形態(以下,稱為本實施形態)進行說明。再者,本發明並不僅僅限定於以下之實施形態,當然可於不脫離本發明之主旨之範圍內實現各種變更。又,圖式係示意性者,各尺寸之比率等存在與現實者不同之情形。具體之尺寸等應斟酌以下之說明而判斷。又,當然於圖式相互間亦包含彼此 之尺寸關係或比率不同之部分。 Hereinafter, referring to the drawings, an embodiment of the present invention (hereinafter, referred to as the present embodiment) will be described in detail in the following order. Furthermore, the present invention is not limited to the following embodiments, and of course various changes can be made without departing from the gist of the present invention. In addition, the figures are schematic, and the ratio of each size may differ from the actual one. Specific dimensions, etc. should be judged taking into account the following description. Also, of course, the schema also includes each other The size relationship or ratio is different.

1.接著劑 1. Adhesive

2.連接構造體 2. Connection structure

3.實施例 3. Examples

<1.接著劑> <1. Adhesive>

可應用本發明之接著劑含有脂環式環氧化合物或氫化環氧化合物、陽離子觸媒、重量平均分子量為50000~900000之丙烯酸樹脂、及焊料粒子,且丙烯酸樹脂包含0.5~10wt%之丙烯酸、及0.5~10wt%之具有羥基之丙烯酸酯。 Adhesives applicable to the present invention contain an alicyclic epoxy compound or a hydrogenated epoxy compound, a cationic catalyst, an acrylic resin with a weight average molecular weight of 50,000 to 900,000, and solder particles, and the acrylic resin contains 0.5 to 10% by weight of acrylic acid, And 0.5~10wt% of acrylate with hydroxyl group.

圖1係表示於接著劑與氧化膜之界面,將環氧化合物設為海、將丙烯酸樹脂設為島時之海島模型之剖面圖。該海島模型係表示分散於環氧化合物之海12之丙烯酸樹脂之島13接觸於配線11之氧化膜11a上之狀態的硬化物模型。 FIG. 1 is a cross-sectional view of a sea-island model when an epoxy compound is sea and an acrylic resin is an island at the interface between an adhesive and an oxide film. The sea island model is a model of a cured product in which the island 13 of acrylic resin dispersed in the sea 12 of epoxy compound is in contact with the oxide film 11a of the wiring 11.

於該硬化物模型中,丙烯酸樹脂中之丙烯酸與環氧化合物反應,而產生丙烯酸樹脂之島13與環氧化合物之海12之連結,並且使氧化膜11a之表面變粗糙而增強與環氧化合物之海12之投錨效應。又,丙烯酸樹脂中之具有羥基之丙烯酸酯係因羥基之極性而獲得對配線11之靜電接著力。藉由如上所述,以丙烯酸樹脂之島13及環氧化合物之海12之硬化物整體對氧化膜11a進行接著,可獲得優異之接著力。 In the cured product model, acrylic acid in the acrylic resin reacts with the epoxy compound to produce a connection between the island 13 of the acrylic resin and the sea 12 of the epoxy compound, and roughens the surface of the oxide film 11a to strengthen the epoxy compound The investment anchor effect of the sea of 12. In addition, the acrylate having a hydroxyl group in the acrylic resin obtains the electrostatic adhesion to the wiring 11 due to the polarity of the hydroxyl group. By bonding the oxide film 11 a with the cured product of the island 13 of acrylic resin and the sea 12 of epoxy compound as described above, excellent adhesion can be obtained.

其次,對焊料粒子進行說明。具體而言,使用以接著劑將LED元件與具有表面被設為氧化物之配線圖案之鋁配線基板接著之例進行說明。圖2係說明接著劑中含有之焊料粒子之作用之剖面圖。 Next, the solder particles will be described. Specifically, an example will be described in which an LED element is bonded to an aluminum wiring substrate having a wiring pattern whose surface is an oxide with an adhesive. Fig. 2 is a cross-sectional view illustrating the action of solder particles contained in an adhesive.

如圖2所示,焊料粒子1係與下文將述之導電性粒子2一併添加於上述構成之樹脂黏合劑3。焊料粒子1係與導電性粒子2一併分散配置於LED元件之電極10與鋁配線基板之配線11之間,於壓接步驟中被熔解而成為熔解焊料1a。 As shown in FIG. 2, the solder particles 1 are added to the resin binder 3 configured as described above together with the conductive particles 2 described below. The solder particles 1 are dispersed together with the conductive particles 2 between the electrode 10 of the LED element and the wiring 11 of the aluminum wiring board, and are melted in the pressure bonding step to become the molten solder 1a.

此處,LED元件之電極10由Au或Au-Sn所構成。焊料粒子1若被加熱至熔點以上則熔解,若被冷卻至凝固點以下則凝固成大致柱狀,一端面1b與電極10金屬結合。另一方面,焊料粒子1無法與配線11金屬結合。其原因在於,於配線11上存在由氧化鋁形成之氧化膜11a,於通常之壓接步驟中,熔解焊料1a與鋁配線基板之配線11無法實現金屬結合。因此,不存在熔解焊料1a於LED元件之電極10與配線11之間有助於電性導通之情形。 Here, the electrode 10 of the LED element is composed of Au or Au-Sn. The solder particles 1 melt when heated above the melting point, and solidify into a substantially columnar shape when cooled below the freezing point, and one end face 1b is metal-bonded to the electrode 10. On the other hand, the solder particles 1 cannot be combined with the metal of the wiring 11. The reason for this is that there is an oxide film 11a formed of aluminum oxide on the wiring 11, and in the normal pressure bonding step, the solder 1a is melted and the wiring 11 of the aluminum wiring board cannot be metal-bonded. Therefore, there is no case where the melting solder 1a contributes to electrical conduction between the electrode 10 and the wiring 11 of the LED element.

然而,熔解焊料1a係於端面1b與電極10金屬結合,故而電極10與熔解焊料1a形成一個構造體。其結果,於LED元件與接著劑之間接著力變高。具體而言,於不存在熔解焊料1a之情形時,LED元件之電極10與接著劑僅以二維之面接觸,但由LED元件之電極10與熔解焊料1a形成之構造體具有三維構造,故而結果於電極10與接著劑之間接著面積增加。即,熔解焊料1a與電極10之一部分金屬結合,藉此對接著劑發揮作為樁子(錨)之功能,故而可於電極10與接著劑之間提高接著強度。 However, the melted solder 1a is metal-bonded to the electrode 10 at the end surface 1b, so the electrode 10 and the melted solder 1a form a structure. As a result, the adhesion between the LED element and the adhesive increases. Specifically, when there is no molten solder 1a, the electrode 10 of the LED element and the adhesive are only in two-dimensional contact, but the structure formed by the electrode 10 of the LED element and the molten solder 1a has a three-dimensional structure, so As a result, the area between the electrode 10 and the adhesive increases. That is, the molten solder 1a is bonded to a part of the metal of the electrode 10, thereby acting as a pile (anchor) to the adhesive, so that the bonding strength can be improved between the electrode 10 and the adhesive.

又,由於熔解焊料1a與電極10金屬結合,因此並非如用作散熱用材料之其他粒子般為點接觸、而是成為面接觸,可自LED元件側經由熔融焊料1a而進行散熱,可飛躍性地提高散熱特性。又,與配線11之接觸面亦介隔氧化膜11a,但成為面接觸而變得易於傳遞熱,於該方面而言, 亦可提高散熱特性。再者,亦於比較例中詳細地說明與其他散熱用材料之比較。 In addition, since the molten solder 1a is metal-bonded with the electrode 10, it is not a point contact like other particles used as a heat dissipation material, but a surface contact, and heat can be dissipated from the LED element side through the molten solder 1a, which can be leapfrogged. Improve heat dissipation characteristics. In addition, the contact surface with the wiring 11 also interposes the oxide film 11a, but it becomes a surface contact and becomes easy to transfer heat. In this respect, Can also improve the heat dissipation characteristics. In addition, the comparison with other materials for heat dissipation is explained in detail in the comparative example.

焊料粒子1可根據電極材料或連接條件等而自例如JIS Z 3282-1999中規定之Sn-Pb系、Pb-Sn-Sb系、Sn-Sb系、Sn-Pb-Bi系、Bi-Sn系、Sn-Cu系、Sn-Pb-Cu系、Sn-In系、Sn-Ag系、Sn-Pb-Ag系、Pb-Ag系等中適當地選擇。又,焊料粒子1之形狀可自粒狀、鱗片狀等中適當地選擇。 The solder particles 1 can be selected from, for example, Sn-Pb series, Pb-Sn-Sb series, Sn-Sb series, Sn-Pb-Bi series, Bi-Sn series specified in JIS Z 3282-1999 according to electrode materials or connection conditions, etc. , Sn-Cu system, Sn-Pb-Cu system, Sn-In system, Sn-Ag system, Sn-Pb-Ag system, Pb-Ag system, etc. are selected as appropriate. In addition, the shape of the solder particles 1 can be appropriately selected from granular, scaly, and the like.

再者,焊料粒子1之平均粒徑(D50)較佳為設為3μm以上且未達30μm,焊料粒子1之添加量較佳為設為50質量份以上且未達150質量份。其原因在於:若添加量過少,則無法期待如上所述之投錨效應,又,若過度增加添加量,則樹脂黏合劑3相對變少,作為接著劑之接著力下降。 Furthermore, the average particle diameter (D50) of the solder particles 1 is preferably 3 μm or more and less than 30 μm, and the added amount of the solder particles 1 is preferably 50 parts by mass or more and less than 150 parts by mass. The reason is that if the added amount is too small, the anchoring effect as described above cannot be expected, and if the added amount is excessively increased, the resin binder 3 relatively decreases, and the adhesion as an adhesive decreases.

又,焊料粒子1之熔點較佳為使用構裝溫度以下者。若使用此種熔點之焊料粒子1,則可藉由構裝(壓接步驟)時之加熱而熔解焊料粒子1,故而無需追加僅用以熔解焊料粒子1之加熱步驟。即,可使接著劑硬化,並且熔解焊料粒子1。又,其原因在於,為了形成熔解焊料1a,不會對LED元件或基板賦予過度之加熱應力。例如,於在使用鋁配線之樹脂基板接著LED元件之情形時,考慮樹脂基板之耐熱性而以180℃進行構裝,故而於該情形時,較佳為180℃以下。 In addition, the melting point of the solder particles 1 is preferably the one below the assembly temperature. If the solder particles 1 having such a melting point are used, the solder particles 1 can be melted by heating during assembly (crimping step), so there is no need to add a heating step for melting the solder particles 1 only. That is, the adhesive can be hardened and the solder particles 1 can be melted. The reason for this is that in order to form the molten solder 1a, excessive heating stress is not applied to the LED element or the substrate. For example, in a case where a resin substrate using aluminum wiring is attached to an LED element, the heat resistance of the resin substrate is taken into consideration at 180°C. Therefore, in this case, it is preferably 180°C or lower.

其次,作為脂環式環氧化合物,可較佳地列舉於分子內具有2個以上之環氧基者。該等脂環式環氧化合物可為液狀,亦可為固體狀。具體而言,可列舉3,4-環氧環己烯基甲基-3',4'-環氧環己烯羧酸酯、環氧 丙六氫雙酚A等。於該等中,就可於硬化物中確保適於LED元件之構裝等之透光性,且速硬化性亦優異之方面而言,可較佳地使用3,4-環氧環己烯基甲基-3',4'-環氧環己烯羧酸酯。 Next, as the alicyclic epoxy compound, those having two or more epoxy groups in the molecule can be preferably exemplified. The alicyclic epoxy compound may be liquid or solid. Specifically, 3,4-epoxycyclohexenylmethyl-3',4'-epoxycyclohexene carboxylate, epoxy Hexahydrobisphenol A, etc. Among these, 3,4-epoxycyclohexene can be preferably used in terms of ensuring light transmittance suitable for the construction of LED elements and the like and excellent rapid hardening property in the cured product. Methyl-3',4'-epoxycyclohexene carboxylate.

作為氫化環氧化合物,可使用上述脂環式環氧化合物之氫化物、或雙酚A型、雙酚F型等公知之氫化環氧化合物。 As the hydrogenated epoxy compound, a known hydrogenated epoxy compound such as the hydride of the alicyclic epoxy compound or the bisphenol A type and the bisphenol F type can be used.

脂環式環氧化合物或氫化環氧化合物可單獨使用,亦可併用2種以上。又,除該等環氧化合物以外,只要不損壞本發明之效果,則亦可併用其他環氧化合物。例如,可列舉:使雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、對苯二酚、鄰苯二酚、間苯二酚、甲酚、四溴雙酚A、三羥基聯苯、二苯甲酮、雙間苯二酚、雙酚六氟丙酮、四甲基雙酚A、四甲基雙酚F、三(羥苯基)甲烷、聯二甲苯酚、酚系酚醛清漆、甲酚酚醛清漆等多酚與表氯醇反應而獲得之環氧丙醚;使甘油、新戊二醇、乙二醇、丙二醇、丁二醇、己二醇、聚乙二醇、聚丙二醇等脂肪族多元醇與表氯醇反應而獲得之聚環氧丙醚;使如對羥基苯甲酸、β-羥萘甲酸之羥基羧酸與表氯醇反應而獲得之環氧丙醚酯;自如鄰苯二甲酸、甲基鄰苯二甲酸、間苯二甲酸、對苯二甲酸、四氫鄰苯二甲酸、內亞甲基四氫鄰苯二甲酸、內亞甲基六氫鄰苯二甲酸、1,2,4-苯三甲酸、聚合脂肪酸之聚羧酸獲得之聚環氧丙酯;自胺基苯酚、胺基烷酚獲得之環氧丙基胺基環氧丙醚;自胺基苯甲酸獲得之環氧丙基胺基環氧丙酯;自苯胺、甲苯胺、三溴苯胺、苯二甲胺、二胺基環己烷、雙胺基甲基環己烷、4,4'-二胺基二苯甲烷、4,4'-二胺基二苯基碸等獲得之環氧丙胺;環氧化聚烯烴等公知之環氧樹脂類。 The alicyclic epoxy compound or hydrogenated epoxy compound may be used alone or in combination of two or more. In addition to these epoxy compounds, other epoxy compounds may be used in combination as long as the effects of the present invention are not impaired. For example, bisphenol A, bisphenol F, bisphenol S, tetramethyl bisphenol A, diaryl bisphenol A, hydroquinone, catechol, resorcinol, cresol, Tetrabromobisphenol A, trihydroxybiphenyl, benzophenone, bisresorcinol, bisphenol hexafluoroacetone, tetramethylbisphenol A, tetramethylbisphenol F, tris(hydroxyphenyl)methane, Glycidyl ether obtained from the reaction of polyphenols such as bixylenol, phenolic novolak, cresol novolak and epichlorohydrin; glycerin, neopentyl glycol, ethylene glycol, propylene glycol, butylene glycol, hexanediol Polypropylene oxide obtained by reacting aliphatic polyhydric alcohols such as alcohol, polyethylene glycol, polypropylene glycol and epichlorohydrin; reacting hydroxycarboxylic acids such as p-hydroxybenzoic acid and β-hydroxynaphthoic acid with epichlorohydrin The obtained glycidyl ether ester; free phthalic acid, methyl phthalic acid, isophthalic acid, terephthalic acid, tetrahydrophthalic acid, internal methylenetetrahydrophthalic acid, internal Polypropylene oxide obtained from methylenehexahydrophthalic acid, 1,2,4-benzenetricarboxylic acid, polycarboxylic acid polymerized fatty acid; epoxypropylamine obtained from aminophenol, aminoalkanol Glycidyl ether; glycidyl propyl glycidyl ester obtained from aminobenzoic acid; from aniline, toluidine, tribromoaniline, xylylenediamine, diaminocyclohexane, diaminomethyl Cyclopropylamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylbenzene, etc., obtained from glycidylamine; epoxidized polyolefin and other known epoxy resins.

作為陽離子觸媒,例如可列舉鋁螯合物系潛伏性硬化劑、咪 唑系潛伏性硬化劑、鋶系潛伏性硬化劑等潛伏性陽離子硬化劑。於該等中,可較佳地使用速硬化性優異之鋁螯合物系潛伏性硬化劑。 Examples of the cationic catalyst include aluminum chelate latent hardeners and Latent cationic hardeners such as azole-based latent hardeners and lacquer-based latent hardeners. Among these, an aluminum chelate latent hardener excellent in rapid hardening property can be preferably used.

陽離子觸媒之含量存在如下傾向,即,若過少則反應性消失,若過多則接著劑之製品壽命減少,故而相對於環氧化合物100重量份較佳為0.1~30質量份,更佳為0.5~20質量份。 The content of the cationic catalyst has a tendency that if it is too little, the reactivity disappears, and if it is too much, the product life of the adhesive decreases, so it is preferably 0.1 to 30 parts by mass, more preferably 0.5 with respect to 100 parts by weight of the epoxy compound. ~20 parts by mass.

丙烯酸樹脂係重量平均分子量為50000~900000。於圖1所示之硬化物模型中,丙烯酸樹脂之重量平均分子量對丙烯酸樹脂之島13之大小有影響,藉由丙烯酸樹脂之重量平均分子量為50000~900000而可使適度之大小之丙烯酸樹脂的島13與氧化膜11a接觸。於丙烯酸樹脂之重量平均分子量未達50000之情形時,丙烯酸樹脂之島13與氧化膜11a之接觸面積變小,無法獲得提高接著力之效果。又,於丙烯酸樹脂之重量平均分子量超過900000之情形時,丙烯酸樹脂之島13變大,不可謂以丙烯酸樹脂之島13及環氧化合物之海12之硬化物整體對氧化膜11a進行接著之狀態,而接著力下降。 The weight average molecular weight of the acrylic resin system is 50,000 to 900,000. In the cured product model shown in FIG. 1, the weight average molecular weight of acrylic resin has an influence on the size of the island 13 of acrylic resin. By the weight average molecular weight of acrylic resin being 50000~900000, the acrylic resin of appropriate size can be made The island 13 is in contact with the oxide film 11a. When the weight average molecular weight of the acrylic resin is less than 50000, the area of contact between the island 13 of the acrylic resin and the oxide film 11a becomes small, and the effect of improving the adhesion cannot be obtained. In addition, when the weight average molecular weight of the acrylic resin exceeds 900,000, the island 13 of the acrylic resin becomes larger, and it cannot be said that the oxide film 11a is bonded to the entire cured product of the island 13 of the acrylic resin and the sea of the epoxy compound 12 , And then the force drops.

又,丙烯酸樹脂包含0.5~10wt%之丙烯酸,更佳為包含1~5wt%。藉由在丙烯酸樹脂中包含0.5~10wt%之丙烯酸,因與環氧化合物之反應而產生丙烯酸樹脂之島13與環氧化合物之海12之連結,並且氧化膜11a之表面變粗糙而增強與環氧化合物之海12之投錨效應。 In addition, the acrylic resin contains 0.5 to 10 wt% of acrylic acid, more preferably 1 to 5 wt%. By including acrylic resin in an amount of 0.5 to 10 wt% in acrylic resin, the connection between the island of acrylic resin 13 and the sea of epoxy compound 12 is generated due to the reaction with the epoxy compound, and the surface of the oxide film 11a becomes roughened to strengthen and ring The anchor effect of the sea of oxygen compounds 12.

又,丙烯酸樹脂包含0.5~10wt%之具有羥基之丙烯酸酯,更佳為包含1~5wt%。藉由在丙烯酸樹脂中包含0.5~10wt%之丙烯酸酯,而因羥基之極性而獲得對配線11之靜電接著力。 In addition, the acrylic resin contains 0.5 to 10 wt% of acrylate having a hydroxyl group, more preferably 1 to 5 wt%. By including 0.5 to 10 wt% of acrylate in the acrylic resin, the electrostatic adhesion to the wiring 11 is obtained due to the polarity of the hydroxyl group.

作為具有羥基之丙烯酸酯,可列舉甲基丙烯酸2-羥基乙 酯、甲基丙烯酸2-羥基丙酯、丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯等。於該等中,可較佳地使用對氧化膜之接著性優異之甲基丙烯酸2-羥基乙酯。 Examples of the acrylate having a hydroxyl group include 2-hydroxyethyl methacrylate Ester, 2-hydroxypropyl methacrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, etc. Among these, 2-hydroxyethyl methacrylate excellent in adhesion to an oxide film can be preferably used.

又,丙烯酸樹脂係除丙烯酸及具有羥基之丙烯酸酯以外,包含不具有羥基之丙烯酸酯。作為不具有羥基之丙烯酸酯,可列舉丙烯酸丁酯、丙烯酸乙酯、丙烯酸腈等。 In addition, acrylic resins include acrylates that do not have hydroxyl groups in addition to acrylic acid and acrylates that have hydroxyl groups. Examples of acrylates having no hydroxyl group include butyl acrylate, ethyl acrylate, and acrylic nitrile.

又,丙烯酸樹脂之含量係相對於環氧化合物100質量份較佳為1~10質量份,更佳為1~5質量份。藉由丙烯酸樹脂之含量相對於環氧化合物100質量份為1~10質量份,可獲得丙烯酸樹脂之島13以良好之密度分散於環氧樹脂之海12之硬化物。 In addition, the content of the acrylic resin is preferably 1 to 10 parts by mass, and more preferably 1 to 5 parts by mass relative to 100 parts by mass of the epoxy compound. When the content of the acrylic resin is 1 to 10 parts by mass relative to 100 parts by mass of the epoxy compound, a cured product in which the island 13 of the acrylic resin is dispersed in the sea 12 of the epoxy resin with good density can be obtained.

又,本發明所應用之接著劑係為了提高與無機材料之於界面之接著性,作為其他成分,亦可更含有矽烷偶合劑。作為矽烷偶合劑,可列舉環氧系、甲基丙烯醯氧基系、胺系、乙烯系、巰-硫系、醯脲(ureide)系等,該等可單獨使用,亦可混合2種類以上而使用。於該等中,在本實施形態中可較佳地使用環氧系矽烷偶合劑。 In addition, the adhesive used in the present invention is intended to improve the adhesion with the inorganic material at the interface. As other components, it may further contain a silane coupling agent. Examples of the silane coupling agent include epoxy-based, methacryloxy-based, amine-based, ethylene-based, mercapto-sulfur-based, and ureide-based. These can be used alone or two or more types can be mixed. And use. Among these, the epoxy-based silane coupling agent can be preferably used in this embodiment.

又,為了控制流動性,提高粒子捕捉率,接著劑亦可含有無機填料。作為無機填料,並無特別限定,可使用氧化矽、滑石、氧化鈦、碳酸鈣、氧化鎂等。此種無機填料能夠以緩和藉由接著劑連接之連接構造體之應力為目的而適當地使用。又,亦可調配熱塑性樹脂、橡膠成分等柔軟劑等。 In addition, in order to control the fluidity and improve the particle capture rate, the adhesive may contain an inorganic filler. The inorganic filler is not particularly limited, and silicon oxide, talc, titanium oxide, calcium carbonate, magnesium oxide, and the like can be used. Such an inorganic filler can be suitably used for the purpose of easing the stress of the connection structure connected by an adhesive. In addition, softeners such as thermoplastic resins and rubber components can also be blended.

根據此種接著劑,可對鋁等難接著金屬獲得較高之接著力。 According to such an adhesive, it is possible to obtain a high adhesion to difficult metals such as aluminum.

又,接著劑亦可為含有導電性粒子之異向性導電接著劑。作 為導電性粒子,可使用公知之導電性粒子。例如,可列舉鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或金屬合金之粒子、金屬氧化物、於碳、石墨、玻璃、陶瓷、塑膠等之粒子之表面塗敷金屬而成者、於該等粒子之表面進而塗敷絕緣薄膜而成者等。於在樹脂粒子之表面塗敷金屬而成者之情形時,作為樹脂粒子,例如可使用環氧樹脂、酚系樹脂、丙烯酸樹脂、丙烯腈-苯乙烯(AS)樹脂、苯胍胺樹脂、二乙烯苯系樹脂、苯乙烯系樹脂等之粒子。 In addition, the adhesive may be an anisotropic conductive adhesive containing conductive particles. Make As the conductive particles, known conductive particles can be used. For example, particles of various metals or metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, gold, etc., metal oxides, particles of carbon, graphite, glass, ceramics, plastics, etc. Those coated with metal on the surface, those coated with an insulating film on the surface of these particles, etc. In the case of a metal coated on the surface of the resin particles, as the resin particles, for example, epoxy resin, phenol resin, acrylic resin, acrylonitrile-styrene (AS) resin, benzoguanamine resin, dimethacrylate Particles of vinylbenzene resin, styrene resin, etc.

作為導電性粒子之平均粒徑,通常為1~10μm,更佳為2~6μm。又,接著劑成分中之導電性粒子之平均粒子密度係就連接可靠性及絕緣可靠性之觀點而言,較佳為1000~100000個/mm2、更佳為30000~80000個/mm2。此處,導電性粒子之含量較佳為設為1~20質量份。 The average particle diameter of the conductive particles is usually 1 to 10 μm, more preferably 2 to 6 μm. Further, the average particle density is then based agent component of the conductive particles on the connection reliability and insulation reliability of the viewpoint, preferably 1,000 to 100,000 / mm 2, more preferably 30,000 to 80,000 / mm 2. Here, the content of the conductive particles is preferably 1 to 20 parts by mass.

根據此種異向性導電接著劑,可對具有氧化膜之鋁配線或ITO配線獲得優異之連接可靠性。 According to such anisotropic conductive adhesive, excellent connection reliability can be obtained for aluminum wiring or ITO wiring having an oxide film.

<2.連接構造體> <2. Connection structure>

其次,對應用本發明之連接構造體進行說明。圖3係作為連接構造體之一例,表示作為發熱之電子零件之LED元件之剖面圖。連接構造體包括具有配線圖案22之基板21、形成於配線圖案22之電極上之異向性導電膜30、及構裝於異向性導電膜30上之發光元件23,且異向性導電膜30由上述異向性導電接著劑之硬化物所構成。該發光裝置係藉由如下方式獲得:於基板21上之配線圖案22、與連接用凸塊26之間塗佈上述異向性導電接著劑,而倒裝晶片構裝基板21與發光元件23;該連接用凸塊26分別形成於作為發光元件23之LED元件之n電極24及p電極25。 Next, the connection structure to which the present invention is applied will be described. 3 is a cross-sectional view of an LED element as an electronic component that generates heat as an example of a connection structure. The connection structure includes a substrate 21 having a wiring pattern 22, an anisotropic conductive film 30 formed on an electrode of the wiring pattern 22, and a light-emitting element 23 structured on the anisotropic conductive film 30, and the anisotropic conductive film 30 is composed of the cured product of the anisotropic conductive adhesive. The light-emitting device is obtained by applying the above-mentioned anisotropic conductive adhesive between the wiring pattern 22 on the substrate 21 and the connection bumps 26, and flip-chip mounting the substrate 21 and the light-emitting element 23; The connection bumps 26 are formed on the n electrode 24 and the p electrode 25 of the LED element as the light emitting element 23, respectively.

再者,此處所說明之凸塊26係使用實施Au或Au-Sn之合金鍍敷而成者。因此,凸塊26相當於在圖2中所說明之電極10,焊料粒子1係與凸塊26之間金屬結合。 In addition, the bump 26 described here is formed by plating Au or Au-Sn alloy. Therefore, the bump 26 corresponds to the electrode 10 described in FIG. 2, and the solder particles 1 are metal-bonded to the bump 26.

於本實施形態中,使用上述異向性導電接著劑,藉此可較佳地使用具有由鋁所構成之配線圖案之基板。藉此,可謀求LED製品之低成本化。 In this embodiment, the anisotropic conductive adhesive described above is used, whereby a substrate having a wiring pattern composed of aluminum can be preferably used. With this, the cost of LED products can be reduced.

又,可較佳地使用具有由ITO等透明導電膜所構成之配線圖案之透明基板。藉此,例如可於在PET(Polyethylene terephthalate)基材上形成有ITO(Indium Tin Oxide)配線之透明樹脂基板構裝LED元件。 In addition, a transparent substrate having a wiring pattern composed of a transparent conductive film such as ITO can be preferably used. In this way, for example, an LED element can be mounted on a transparent resin substrate with ITO (Indium Tin Oxide) wiring formed on a PET (Polyethylene terephthalate) substrate.

再者,亦可視需要利用散熱特性良好之透明模塑樹脂以覆蓋發光元件23之整體之方式進行密封。又,亦可於發光元件23設置光反射層。又,作為發光元件,除LED元件以外,可於不損壞本發明之效果之範圍內使用公知之發熱的電子零件。 Furthermore, if necessary, a transparent mold resin with good heat dissipation characteristics may be used to seal the entire light-emitting element 23. In addition, a light reflection layer may be provided on the light emitting element 23. In addition, as the light-emitting element, in addition to the LED element, a known heat-generating electronic component can be used within a range that does not impair the effects of the present invention.

<3.實施例> <3. Example> [實施例] [Example] [第1實施例] [First embodiment]

以下,對本發明之第1實施例進行說明。於本實施例中,製作各種異向性導電接著劑,使用該等異向性導電接著劑於基板上搭載LED元件而製作LED構裝樣品,對有無LED元件之端子部分與焊料粒子之合金形成、熱阻值、及對鋁接著力進行評價。再者,本發明並不限定於該等實施例。 Hereinafter, the first embodiment of the present invention will be described. In this embodiment, various anisotropic conductive adhesives are produced, and LED components are fabricated by using these anisotropic conductive adhesives to mount LED elements on a substrate, and alloys of terminal portions with and without LED elements and solder particles are formed , Thermal resistance, and evaluation of aluminum adhesion. Furthermore, the invention is not limited to these embodiments.

[剝離強度之測定] [Measurement of Peel Strength]

於由陶瓷所構成之白色板上,以厚度成為100μm之方式塗佈異向性 導電接著劑,以180℃-1.5N-30sec之條件對1.5mm×10mm之鋁片進行熱壓接,從而製作接合體。 Apply anisotropy to a white plate made of ceramics with a thickness of 100 μm The conductive adhesive was thermocompression-bonded to an aluminum sheet of 1.5 mm×10 mm under the conditions of 180° C.-1.5 N-30 sec, thereby producing a bonded body.

如圖4所示,使用拉力試驗機,以拉伸速度50mm/sec向90°之Y軸方向剝離接合體之鋁片,測定該剝離所需之剝離強度之最大值。 As shown in FIG. 4, using a tensile tester, the aluminum sheet of the bonded body was peeled in the Y-axis direction of 90° at a tensile speed of 50 mm/sec, and the maximum value of peel strength required for the peeling was measured.

[LED構裝樣品之製作] [Production of LED construction samples]

如圖5所示,製作LED構裝樣品。於平台上排列多個間距為50μm之配線基板(50μm之Al配線-25μm之PI(聚醯亞胺)層-50μm之Al基底)51,於各配線基板51上塗佈約10μg之異向性導電接著劑50。於異向性導電接著劑50上,搭載Cree公司製造之LED晶片(商品名:DA3547,最大額定:150mA,尺寸:0.35mm×0.46mm)52,使用熱加壓工具53進行倒裝晶片構裝,從而獲得LED構裝樣品。 As shown in Fig. 5, a sample of the LED structure was fabricated. A plurality of wiring substrates with a pitch of 50 μm (Al wiring of 50 μm—PI (polyimide) layer of 50 μm—Al base of 50 μm) are arranged on the platform, and an anisotropy of about 10 μg is coated on each wiring substrate 51 Conductive adhesive 50. On the anisotropic conductive adhesive 50, an LED chip (trade name: DA3547, maximum rating: 150mA, size: 0.35mm×0.46mm) 52 manufactured by Cree is mounted, and a flip chip is mounted using a hot press tool 53 , So as to obtain LED construction samples.

[晶片剪切強度之測定] [Measurement of wafer shear strength]

如圖6所示,使用晶片剪切測試機,以工具54之剪切速度20μm/sec、25℃之條件測定各LED構裝樣品之接合強度。 As shown in FIG. 6, using a wafer shear tester, the bonding strength of each LED mounting sample was measured under the conditions of the shear speed of the tool 54 at 20 μm/sec and 25°C.

[有無合金形成之評價] [Evaluation of alloy formation]

使用顯微鏡(SEM:Scanning Electron Microscope)等,對各LED構裝樣品之外觀確認是否已於LED元件之電極部分與焊料粒子之間實現合金形成。具體而言,若實現合金形成,則電極部分與焊料粒子之間係藉由熔解焊料而面接觸。因此,可藉由觀察熔融焊料之擴展面積而判斷是否形成有合金,即,可判斷是否已實現金屬結合。 Using a microscope (SEM: Scanning Electron Microscope), etc., confirm whether the appearance of each LED mounting sample has been alloyed between the electrode part of the LED element and the solder particles. Specifically, if alloy formation is achieved, the electrode portion and the solder particles are in surface contact by melting the solder. Therefore, whether the alloy is formed can be judged by observing the expanded area of the molten solder, that is, whether the metal bonding has been achieved can be judged.

[熱阻值之評價] [Evaluation of Thermal Resistance]

使用暫態熱阻測定裝置(CATS電子設計公司製造),測定LED構裝體 之熱阻值(℃/W)。測定條件係以If=200mA(定電流控制)進行。 Using a transient thermal resistance measuring device (manufactured by CATS Electronic Design) to measure the LED structure The thermal resistance value (℃/W). The measurement conditions were performed with If=200mA (constant current control).

[綜合評價] [Overview]

將有無LED元件之端子部分與焊料粒子之合金形成、熱阻值均為「○」、剝離強度為2.0N以上、且晶片剪切強度為5.0N以上者評價為「OK」,將除此之外者評價為「NG」。 If the terminal part of the LED element is formed with an alloy of solder particles, the thermal resistance value is "○", the peel strength is 2.0N or more, and the wafer shear strength is 5.0N or more, it is evaluated as "OK", except for this Outsiders are evaluated as "NG".

[實施例1] [Example 1]

使焊料熔點為150℃之焊料粒子30質量份及導電性粒子(品名:AUL704,積水化學工業公司製造)10質量份分散於由脂環式環氧化合物(品名:Celloxide2021P,Daicel化學公司製造)100質量份、潛伏性陽離子硬化劑(鋁螯合物系潛伏性硬化劑)5質量份、丙烯酸樹脂(丙烯酸丁酯(BA):15%,丙烯酸乙酯(EA):63%,丙烯酸腈(AN):20%,丙烯酸(AA):1wt%,甲基丙烯酸2-羥基乙酯(HEMA):1wt%,重量平均分子量Mw:70萬)3質量份構成之接著劑中,製作異向性導電接著劑。又,製作LED構裝樣品時之硬化條件係設為180℃-1.5N-30sec。 30 parts by mass of solder particles with a melting point of 150°C and 10 parts by mass of conductive particles (product name: AUL704, manufactured by Sekisui Chemical Industry Co., Ltd.) are dispersed in 100 parts of an alicyclic epoxy compound (product name: Celloxide2021P, manufactured by Daicel Chemical Company) 100 Mass parts, latent cationic hardener (aluminum chelate-based latent hardener) 5 parts by mass, acrylic resin (butyl acrylate (BA): 15%, ethyl acrylate (EA): 63%, acrylonitrile (AN ): 20%, acrylic acid (AA): 1% by weight, 2-hydroxyethyl methacrylate (HEMA): 1% by weight, weight average molecular weight Mw: 700,000) 3 parts by mass of an adhesive composed of anisotropic conductive Then agent. In addition, the curing conditions at the time of manufacturing the LED structure sample were set to 180°C-1.5N-30sec.

再者,於各實施例中使用焊料粒子之平均粒徑為5μm、7μm、10μm、12μm、25μm者。未於上述範圍內之粒徑中發現顯著差異,故而省略各個粒徑之試驗結果,藉由使用至少上述範圍之粒徑者而可獲得本申請案實施例之結果。於以下之實施例及調配有焊料粒子之比較例中亦相同。 In addition, in each Example, the average particle diameter of the solder particle was 5 micrometers, 7 micrometers, 10 micrometers, 12 micrometers, and 25 micrometers. No significant difference was found in the particle size within the above range, so the test results for each particle size were omitted, and the results of the examples of the present application can be obtained by using a particle size of at least the above range. The same applies to the following examples and comparative examples prepared with solder particles.

於表1中,表示實施例1之各評價結果。確認到合金形成,熱阻值為17(K/W),且剝離強度為4.0N。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為OK。 Table 1 shows the evaluation results of Example 1. It was confirmed that the alloy was formed, the thermal resistance value was 17 (K/W), and the peel strength was 4.0N. In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is OK.

[實施例2] [Example 2]

將焊料粒子之熔點設為150℃,將調配設為40質量份,除此之外,與實施例1相同地製作異向性導電接著劑。 An anisotropic conductive adhesive was prepared in the same manner as in Example 1 except that the melting point of the solder particles was 150°C and the formulation was 40 parts by mass.

於表1中,表示實施例2之各評價結果。確認到合金形成,熱阻值為16(K/W),且剝離強度為4.0N。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為OK。 Table 1 shows the evaluation results of Example 2. It was confirmed that the alloy was formed, the thermal resistance value was 16 (K/W), and the peel strength was 4.0N. In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is OK.

[實施例3] [Example 3]

將焊料粒子之熔點設為150℃,將調配設為60質量份,除此之外,與實施例1相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 1 except that the melting point of the solder particles was 150°C and the formulation was 60 parts by mass.

於表1中,表示實施例3之各評價結果。確認到合金形成,熱阻值為16(K/W),且剝離強度為4.0N。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為OK。 Table 1 shows the evaluation results of Example 3. It was confirmed that the alloy was formed, the thermal resistance value was 16 (K/W), and the peel strength was 4.0N. In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is OK.

[實施例4] [Example 4]

將焊料粒子之熔點設為150℃,將調配設為80質量份,除此之外,與實施例1相同地製作異向性導電接著劑。 An anisotropic conductive adhesive was prepared in the same manner as in Example 1 except that the melting point of the solder particles was 150°C and the formulation was 80 parts by mass.

於表1中,表示實施例4之各評價結果。確認到合金形成,熱阻值為15(K/W),且剝離強度為4.0N。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為OK。 Table 1 shows the evaluation results of Example 4. It was confirmed that the alloy was formed, the thermal resistance value was 15 (K/W), and the peel strength was 4.0N. In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is OK.

[實施例5] [Example 5]

將焊料粒子之熔點設為170℃,將調配設為30質量份,除此之外,與實施例1相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 1 except that the melting point of the solder particles was 170°C and the formulation was 30 parts by mass.

於表1中,表示實施例5之各評價結果。確認到合金形成, 熱阻值為16(K/W),且剝離強度為4.0N。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為OK。 Table 1 shows the evaluation results of Example 5. Confirmation of alloy formation, The thermal resistance value was 16 (K/W), and the peel strength was 4.0N. In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is OK.

[實施例6] [Example 6]

將焊料粒子之熔點設為170℃,將調配設為80質量份,除此之外,與實施例1相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 1 except that the melting point of the solder particles was 170°C and the formulation was 80 parts by mass.

於表1中,表示實施例6之各評價結果。確認到合金形成,熱阻值為16(K/W),且剝離強度為4.0N。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為OK。 Table 1 shows the evaluation results of Example 6. It was confirmed that the alloy was formed, the thermal resistance value was 16 (K/W), and the peel strength was 4.0N. In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is OK.

[比較例1] [Comparative Example 1]

未調配焊料粒子,除此之外,與實施例1相同地製作異向性導電接著劑。 An anisotropic conductive adhesive was prepared in the same manner as in Example 1 except that the solder particles were not prepared.

於表1中,表示比較例1之各評價結果。未確認到合金形成,熱阻值為29(K/W),且剝離強度為4.0N。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為NG。 Table 1 shows the evaluation results of Comparative Example 1. No alloy formation was confirmed, the thermal resistance value was 29 (K/W), and the peel strength was 4.0N. In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is NG.

[比較例2] [Comparative Example 2]

將焊料粒子之熔點設為150℃,將調配設為160質量份,除此之外,與實施例1相同地製作異向性導電接著劑。 An anisotropic conductive adhesive was prepared in the same manner as in Example 1 except that the melting point of the solder particles was 150°C and the formulation was 160 parts by mass.

於表1中,表示比較例2之各評價結果。確認到合金形成,熱阻值為16(K/W),且剝離強度為1.2N。又,LED構裝樣品之晶片剪切強度為2.0N。因此,綜合評價為NG。 Table 1 shows the evaluation results of Comparative Example 2. It was confirmed that the alloy was formed, the thermal resistance value was 16 (K/W), and the peel strength was 1.2N. In addition, the wafer shear strength of the LED structure sample was 2.0N. Therefore, the comprehensive evaluation is NG.

[比較例3] [Comparative Example 3]

將焊料粒子之熔點設為170℃,將調配設為160質量份,除此之外,與 實施例1相同地製作異向性導電接著劑。 The melting point of the solder particles is set to 170°C, and the formulation is set to 160 parts by mass. In Example 1, an anisotropic conductive adhesive was produced in the same manner.

於表1中,表示比較例3之各評價結果。確認到合金形成,熱阻值為16(K/W),且剝離強度為1.2N。又,LED構裝樣品之晶片剪切強度為2.0N。因此,綜合評價為NG。 Table 1 shows the evaluation results of Comparative Example 3. It was confirmed that the alloy was formed, the thermal resistance value was 16 (K/W), and the peel strength was 1.2N. In addition, the wafer shear strength of the LED structure sample was 2.0N. Therefore, the comprehensive evaluation is NG.

[比較例4] [Comparative Example 4]

將焊料粒子之熔點設為200℃,將調配設為30質量份,除此之外,與實施例1相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 1 except that the melting point of the solder particles was 200° C. and the formulation was 30 parts by mass.

於表1中,表示比較例4之各評價結果。未確認到合金形成,熱阻值為26(K/W),且剝離強度為4.0N。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為NG。 Table 1 shows the evaluation results of Comparative Example 4. No alloy formation was confirmed, the thermal resistance value was 26 (K/W), and the peel strength was 4.0N. In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is NG.

[比較例5] [Comparative Example 5]

將焊料粒子之熔點設為200℃,將調配設為80質量份,除此之外,與實施例1相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 1, except that the melting point of the solder particles was 200°C and the formulation was 80 parts by mass.

於表1中,表示比較例5之各評價結果。未確認到合金形成,熱阻值為23(K/W),且剝離強度為4.0N。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為NG。 Table 1 shows the evaluation results of Comparative Example 5. No alloy formation was confirmed, the thermal resistance value was 23 (K/W), and the peel strength was 4.0N. In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is NG.

[比較例6] [Comparative Example 6]

將焊料粒子之熔點設為200℃,將調配設為160質量份,除此之外,與實施例1相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 1 except that the melting point of the solder particles was 200° C. and the formulation was 160 parts by mass.

於表1中,表示比較例6之各評價結果。未確認到合金形成,熱阻值為23(K/W),且剝離強度為1.2N。又,LED構裝樣品之晶片剪切強度為2.0N。因此,綜合評價為NG。 Table 1 shows the evaluation results of Comparative Example 6. No alloy formation was confirmed, the thermal resistance value was 23 (K/W), and the peel strength was 1.2N. In addition, the wafer shear strength of the LED structure sample was 2.0N. Therefore, the comprehensive evaluation is NG.

[比較例7] [Comparative Example 7]

代替焊料粒子而將作為散熱材料之平均粒徑為0.4μm之氧化鋁粉末60質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 60 parts by mass of alumina powder having an average particle diameter of 0.4 μm as a heat dissipation material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表2中,表示比較例7之各評價結果。未確認到合金形成,且熱阻值為25(K/W)。又,LED構裝樣品之晶片剪切強度為8.5N。因此,綜合評價為NG。 Table 2 shows the evaluation results of Comparative Example 7. No alloy formation was confirmed, and the thermal resistance value was 25 (K/W). In addition, the wafer shear strength of the LED structure sample was 8.5N. Therefore, the comprehensive evaluation is NG.

[比較例8] [Comparative Example 8]

代替焊料粒子而將作為散熱材料之平均粒徑為0.4μm之氧化鋁粉末150質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 150 parts by mass of alumina powder having an average particle diameter of 0.4 μm as a heat dissipation material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表2中,表示比較例8之各評價結果。未確認到合金形成,且熱阻值為23(K/W)。又,LED構裝樣品之晶片剪切強度為5.3N。因此,綜合評價為NG。 Table 2 shows the evaluation results of Comparative Example 8. No alloy formation was confirmed, and the thermal resistance value was 23 (K/W). In addition, the wafer shear strength of the LED structure sample was 5.3N. Therefore, the comprehensive evaluation is NG.

[比較例9] [Comparative Example 9]

代替焊料粒子而將作為散熱材料之平均粒徑為3μm之氧化鋁粉末60質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 60 parts by mass of alumina powder having an average particle diameter of 3 μm as a heat dissipation material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表2中,表示比較例9之各評價結果。未確認到合金形成,且熱阻值為29(K/W)。又,LED構裝樣品之晶片剪切強度為8.8N。因此,綜合評價為NG。 Table 2 shows the evaluation results of Comparative Example 9. No alloy formation was confirmed, and the thermal resistance value was 29 (K/W). In addition, the wafer shear strength of the LED structure sample was 8.8N. Therefore, the comprehensive evaluation is NG.

[比較例10] [Comparative Example 10]

代替焊料粒子而將作為散熱材料之平均粒徑為3μm之氧化鋁粉末150質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 150 parts by mass of alumina powder having an average particle diameter of 3 μm as a heat dissipation material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表2中,表示比較例10之各評價結果。未確認到合金形成,且熱阻值為28(K/W)。又,LED構裝樣品之晶片剪切強度為6.2N。因此,綜合評價為NG。 Table 2 shows the evaluation results of Comparative Example 10. No alloy formation was confirmed, and the thermal resistance value was 28 (K/W). In addition, the wafer shear strength of the LED structure sample was 6.2N. Therefore, the comprehensive evaluation is NG.

[比較例11] [Comparative Example 11]

代替焊料粒子而將作為散熱材料之平均粒徑為10μm之氧化鋁粉末60質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 60 parts by mass of alumina powder having an average particle diameter of 10 μm as a heat dissipation material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表2中,表示比較例11之各評價結果。未確認到合金形成,且熱阻值為35(K/W)。又,LED構裝樣品之晶片剪切強度為6.1N。因此,綜合評價為NG。 Table 2 shows the evaluation results of Comparative Example 11. No alloy formation was confirmed, and the thermal resistance value was 35 (K/W). In addition, the wafer shear strength of the LED structure sample was 6.1N. Therefore, the comprehensive evaluation is NG.

[比較例12] [Comparative Example 12]

代替焊料粒子而將作為散熱材料之平均粒徑為10μm之氧化鋁粉末150質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 150 parts by mass of alumina powder having an average particle diameter of 10 μm as a heat dissipation material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表2中,表示比較例12之各評價結果。未確認到合金形成,且熱阻值為33(K/W)。又,LED構裝樣品之晶片剪切強度為5.5N。因此,綜合評價為NG。 Table 2 shows the evaluation results of Comparative Example 12. No alloy formation was confirmed, and the thermal resistance value was 33 (K/W). In addition, the wafer shear strength of the LED structure sample was 5.5N. Therefore, the comprehensive evaluation is NG.

[比較例13] [Comparative Example 13]

代替焊料粒子而將作為散熱材料之平均粒徑為1.5μm之氮化鋁粉末 60質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, aluminum nitride powder with an average particle size of 1.5 μm as a heat dissipation material 60 parts by mass was blended in the resin binder, except that the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表3中,表示比較例13之各評價結果。未確認到合金形成,且熱阻值為22(K/W)。又,LED構裝樣品之晶片剪切強度為8.1N。因此,綜合評價為NG。 Table 3 shows the evaluation results of Comparative Example 13. No alloy formation was confirmed, and the thermal resistance value was 22 (K/W). In addition, the wafer shear strength of the LED structure sample was 8.1N. Therefore, the comprehensive evaluation is NG.

[比較例14] [Comparative Example 14]

代替焊料粒子而將作為散熱材料之平均粒徑為1.5μm之氮化鋁粉末150質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 150 parts by mass of aluminum nitride powder having an average particle diameter of 1.5 μm as a heat dissipating material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表3中,表示比較例14之各評價結果。未確認到合金形成,且熱阻值為19(K/W)。又,LED構裝樣品之晶片剪切強度為5.9N。因此,綜合評價為NG。 Table 3 shows the evaluation results of Comparative Example 14. No alloy formation was confirmed, and the thermal resistance value was 19 (K/W). In addition, the wafer shear strength of the LED structure sample was 5.9N. Therefore, the comprehensive evaluation is NG.

[比較例15] [Comparative Example 15]

代替焊料粒子而將作為散熱材料之平均粒徑為3μm之Ni粉末60質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 60 parts by mass of Ni powder having an average particle diameter of 3 μm as a heat dissipation material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表3中,表示比較例13之各評價結果。未確認到合金形成,且熱阻值為28(K/W)。又,LED構裝樣品之晶片剪切強度為7.9N。因此,綜合評價為NG。 Table 3 shows the evaluation results of Comparative Example 13. No alloy formation was confirmed, and the thermal resistance value was 28 (K/W). In addition, the wafer shear strength of the LED structure sample was 7.9N. Therefore, the comprehensive evaluation is NG.

[比較例16] [Comparative Example 16]

代替焊料粒子而將作為散熱材料之平均粒徑為3μm之Ni粉末150質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電 接著劑。 Instead of solder particles, 150 parts by mass of Ni powder having an average particle diameter of 3 μm as a heat-dissipating material was blended into the resin binder, and the anisotropic conductive material was produced in the same manner as in Example 1. Then agent.

於表3中,表示比較例16之各評價結果。未確認到合金形成,且熱阻值為27(K/W)。又,LED構裝樣品之晶片剪切強度為6.0N。因此,綜合評價為NG。 Table 3 shows the evaluation results of Comparative Example 16. No alloy formation was confirmed, and the thermal resistance value was 27 (K/W). In addition, the wafer shear strength of the LED structure sample was 6.0N. Therefore, the comprehensive evaluation is NG.

[比較例17] [Comparative Example 17]

代替焊料粒子而將作為散熱材料之平均粒徑為10μm之Cu粉末60質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 60 parts by mass of Cu powder having an average particle diameter of 10 μm as a heat dissipation material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表3中,表示比較例17之各評價結果。未確認到合金形成,且熱阻值為41(K/W)。又,LED構裝樣品之晶片剪切強度為8.12N。因此,綜合評價為NG。 Table 3 shows the evaluation results of Comparative Example 17. No alloy formation was confirmed, and the thermal resistance value was 41 (K/W). In addition, the wafer shear strength of the LED structure sample was 8.12N. Therefore, the comprehensive evaluation is NG.

[比較例18] [Comparative Example 18]

代替焊料粒子而將作為散熱材料之平均粒徑為10μm之Cu粉末150質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 150 parts by mass of Cu powder having an average particle diameter of 10 μm as a heat dissipation material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表3中,表示比較例18之各評價結果。未確認到合金形成,且熱阻值為38(K/W)。又,LED構裝樣品之晶片剪切強度為6.2N。因此,綜合評價為NG。 Table 3 shows the evaluation results of Comparative Example 18. No alloy formation was confirmed, and the thermal resistance value was 38 (K/W). In addition, the wafer shear strength of the LED structure sample was 6.2N. Therefore, the comprehensive evaluation is NG.

[比較例19] [Comparative Example 19]

代替焊料粒子而將作為散熱材料之平均粒徑為0.3μm之金剛石粉末60質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 60 parts by mass of diamond powder having an average particle diameter of 0.3 μm as a heat dissipating material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表3中,表示比較例19之各評價結果。未確認到合金形成,且熱阻值為21(K/W)。又,LED構裝樣品之晶片剪切強度為8.3N。因此,綜合評價為NG。 Table 3 shows the evaluation results of Comparative Example 19. No alloy formation was confirmed, and the thermal resistance value was 21 (K/W). In addition, the wafer shear strength of the LED structure sample was 8.3N. Therefore, the comprehensive evaluation is NG.

[比較例20] [Comparative Example 20]

代替焊料粒子而將作為散熱材料之平均粒徑為0.3μm之金剛石粉末150質量份調配於樹脂黏合劑中,除此之外,與實施例1相同地製作異向性導電接著劑。 Instead of solder particles, 150 parts by mass of diamond powder having an average particle diameter of 0.3 μm as a heat dissipating material was blended into the resin binder, and the anisotropic conductive adhesive was prepared in the same manner as in Example 1.

於表3中,表示比較例20之各評價結果。未確認到合金形成,且熱阻值為22(K/W)。又,LED構裝樣品之晶片剪切強度為8.1N。因此,綜合評價為NG。 Table 3 shows the evaluation results of Comparative Example 20. No alloy formation was confirmed, and the thermal resistance value was 22 (K/W). In addition, the wafer shear strength of the LED structure sample was 8.1N. Therefore, the comprehensive evaluation is NG.

Figure 104116412-A0202-12-0023-1
Figure 104116412-A0202-12-0023-1

Figure 104116412-A0202-12-0024-2
Figure 104116412-A0202-12-0024-2

Figure 104116412-A0202-12-0025-3
Figure 104116412-A0202-12-0025-3

比較例1未調配焊料粒子,故而不會產生由熔解焊料實現之金屬結合,而熱阻值變得過大,從而散熱特性變差。 In Comparative Example 1, solder particles are not blended, so metal bonding by melting solder does not occur, and the thermal resistance value becomes too large, thereby deteriorating heat dissipation characteristics.

又,比較例2、3係較多地調配有焊料粒子,故而雖形成熔解焊料,但於鋁配線基板與異向性導電接著劑之間接著力下降,從而於異向性導電接著劑與LED元件之間接著力下降。 In addition, in Comparative Examples 2 and 3, there are many solder particles, so although the molten solder is formed, the adhesion between the aluminum wiring substrate and the anisotropic conductive adhesive is reduced, and the anisotropic conductive adhesive and the LED element Then the force drops.

又,比較例4、5、6中,焊料粒子之熔點設為200℃,故而焊料不會於壓接步驟中充分地熔解,而不會產生由熔解焊料實現之金屬結合,從而於異向性導電接著劑與LED元件之間接著力下降,又,熱阻值變得過大,從而散熱特性變差。 Also, in Comparative Examples 4, 5, and 6, the melting point of the solder particles is set at 200°C, so the solder will not be sufficiently melted in the crimping step, and the metal bonding by the melted solder will not occur, resulting in anisotropy The adhesive force between the conductive adhesive and the LED element decreases, and the thermal resistance value becomes too large, so that the heat dissipation characteristics deteriorate.

又,比較例7、8、9、10、11、12係使用氧化鋁粉末作為散熱材料,故而不會產生由熔解焊料實現之金屬結合,而於異向性導電接著劑與LED元件之間接著力下降,又,熱阻值變得過大,從而散熱特性變差。氧化鋁粉末之熱導率為40W/mK,但根據與本申請案實施例之比較,即便代替焊料粒子而含有於接著劑中,亦無法獲得所期望之特性。 In addition, Comparative Examples 7, 8, 9, 10, 11, and 12 use alumina powder as a heat dissipation material, so there is no metal bonding by melting solder, but the adhesion between the anisotropic conductive adhesive and the LED element When it drops, the thermal resistance value becomes too large, and the heat dissipation characteristics become poor. The thermal conductivity of the alumina powder is 40 W/mK, but according to comparison with the examples of the present application, even if it is contained in the adhesive instead of the solder particles, the desired characteristics cannot be obtained.

又,比較例13、14係使用氮化鋁粉末作為散熱材料,故而不會產生由熔解焊料實現之金屬結合,而於異向性導電接著劑與LED元件之間接著力下降,又,熱阻值變得過大,從而散熱特性變差。氮化鋁粉末之熱導率為180W/mK,但根據與本申請案實施例之比較,即便代替焊料粒子而含有於接著劑中,亦無法獲得所期望之特性。 In addition, Comparative Examples 13 and 14 use aluminum nitride powder as a heat dissipation material, so there is no metal bonding by melting solder, and the adhesion between the anisotropic conductive adhesive and the LED element is reduced, and the thermal resistance value It becomes too large, so that the heat dissipation characteristics deteriorate. The thermal conductivity of aluminum nitride powder is 180 W/mK, but according to comparison with the examples of the present application, even if it is contained in the adhesive instead of the solder particles, the desired characteristics cannot be obtained.

此處,對作為散熱材料而添加氮化鋁之情形進行探討。如圖7所示,於在樹脂黏合劑3中添加氮化鋁粒子61之情形時,不存在如焊料粒子般簡單地熔解之情形,故而保持粒形狀,電極10與氮化鋁粒子61成為 點接觸。因此,傳遞來自LED元件之熱之面積變得非常少,與使用焊料粒子之情形相比,散熱特性變差。又,氮化鋁粒子61與配線11之間之接觸亦成為點接觸。因此,自氮化鋁粒子61向配線基板側之散熱特性亦變差。 Here, the case of adding aluminum nitride as a heat dissipation material will be discussed. As shown in FIG. 7, when the aluminum nitride particles 61 are added to the resin binder 3, there is no case of melting as easily as solder particles, so the particle shape is maintained, and the electrode 10 and the aluminum nitride particles 61 become Point of contact. Therefore, the area for transferring heat from the LED element becomes very small, and the heat dissipation characteristics become worse compared to the case where solder particles are used. In addition, the contact between the aluminum nitride particles 61 and the wiring 11 also becomes a point contact. Therefore, the heat dissipation characteristics from the aluminum nitride particles 61 to the wiring substrate side also deteriorate.

又,比較例15、16係使用Ni粉末作為散熱材料,故而不會產生由熔解焊料實現之金屬結合,而於異向性導電接著劑與LED元件之間接著力下降,又,熱阻值變得過大,從而散熱特性變差。Ni粉末之熱導率為95W/mK,但根據與本申請案實施例之比較,即便代替焊料粒子而含有於接著劑中,亦無法獲得所期望之特性。 In addition, Comparative Examples 15 and 16 use Ni powder as a heat dissipation material, so there is no metal bonding by melting solder, and the adhesion between the anisotropic conductive adhesive and the LED element decreases, and the thermal resistance value becomes If it is too large, the heat dissipation characteristics will deteriorate. The thermal conductivity of Ni powder is 95 W/mK, but according to comparison with the examples of the present application, even if it is contained in the adhesive instead of the solder particles, the desired characteristics cannot be obtained.

又,比較例17、18係使用Cu粉末作為散熱材料,故而不會產生由熔解焊料實現之金屬結合,而於異向性導電接著劑與LED元件之間接著力下降,又,熱阻值變得過大,從而散熱特性變差。Cu粉末之熱導率為400W/mK,但根據與本申請案實施例之比較,即便代替焊料粒子而含有於接著劑中,亦無法獲得所期望之特性。 In addition, Comparative Examples 17 and 18 use Cu powder as a heat dissipation material, so metal bonding by melting solder does not occur, and the adhesion between the anisotropic conductive adhesive and the LED element decreases, and the thermal resistance value becomes If it is too large, the heat dissipation characteristics will deteriorate. The thermal conductivity of Cu powder is 400 W/mK, but according to comparison with the examples of the present application, even if it is contained in the adhesive instead of the solder particles, the desired characteristics cannot be obtained.

此處,對作為散熱材料而添加Cu粒子之情形進行探討。如圖8所示,於在樹脂黏合劑3中添加Cu粒子62之情形時,如下方面與氮化鋁粒子61之情形相同:不存在如焊料粒子般簡單地熔解之情形,故而保持粒形狀,電極10與Cu粒子62成為點接觸。又,Cu粒子62之粒徑非常大,故而接著劑厚度變厚。即便使用高熱導率之Cu粒子,接著劑層之厚度於接著劑層整體上阻礙散熱特性,從而亦無法獲得所期望之散熱特性。 Here, the case of adding Cu particles as a heat dissipation material will be discussed. As shown in FIG. 8, when the Cu particles 62 are added to the resin binder 3, it is the same as the aluminum nitride particles 61 in the following respects: there is no case of melting as easily as solder particles, so the particle shape is maintained, The electrode 10 comes into point contact with the Cu particles 62. In addition, the particle diameter of the Cu particles 62 is very large, so the thickness of the adhesive becomes thicker. Even if Cu particles with high thermal conductivity are used, the thickness of the adhesive layer as a whole hinders the heat dissipation characteristics, so that the desired heat dissipation characteristics cannot be obtained.

又,比較例19、20係使用金剛石粉末作為散熱材料,故而不會產生由熔解焊料實現之金屬結合,而於異向性導電接著劑與LED元件之間接著力下降,又,熱阻值變得過大,從而散熱特性變差。金剛石粉末 之熱導率為1500W/mK,但根據與本申請案實施例之比較,即便代替焊料粒子而含有於接著劑中,亦無法獲得所期望之特性。 In addition, Comparative Examples 19 and 20 use diamond powder as a heat dissipation material, so metal bonding by melting solder does not occur, and the adhesion between the anisotropic conductive adhesive and the LED element decreases, and the thermal resistance value becomes If it is too large, the heat dissipation characteristics will deteriorate. Diamond powder The thermal conductivity is 1500W/mK, but according to comparison with the examples of the present application, even if it is contained in the adhesive instead of the solder particles, the desired characteristics cannot be obtained.

此處,對作為散熱材料而添加金剛石粒子之情形進行探討。如圖9所示,於在樹脂黏合劑3中添加金剛石粒子63之情形時,金剛石粒子63小於接著劑層之厚度,故而無法與LED元件之電極部分、或基板側之配線接觸。即,不會自LED元件向配線基板側形成熱傳遞路徑,故而即便使用高熱導率之金剛石粒子,亦無法獲得所期望之散熱特性。 Here, the case of adding diamond particles as a heat dissipation material will be discussed. As shown in FIG. 9, when the diamond particles 63 are added to the resin binder 3, the diamond particles 63 are smaller than the thickness of the adhesive layer, so they cannot contact the electrode portion of the LED element or the wiring on the substrate side. That is, no heat transfer path is formed from the LED element to the wiring substrate side, so even if diamond particles with high thermal conductivity are used, the desired heat dissipation characteristics cannot be obtained.

另一方面,實施例1~6係調配有脂環式環氧化合物、潛伏性陽離子硬化劑、及具有丙烯酸(AA)與甲基丙烯酸2-羥基乙酯(HEMA)之丙烯酸樹脂,故而具有光學用途之特性,進而,可對具有氧化膜之鋁配線獲得較高之接著力及優異之導通可靠性,又,焊料粒子之熔點係設為構裝溫度以下,故而於壓接步驟中焊料粒子熔解,熔解焊料與LED元件之電極金屬結合,可獲得較高之接著力與優異之散熱特性。 On the other hand, Examples 1 to 6 are formulated with an alicyclic epoxy compound, a latent cationic hardener, and an acrylic resin having acrylic acid (AA) and 2-hydroxyethyl methacrylate (HEMA), so it has optical The characteristics of the application, in addition, can obtain high adhesion and excellent conduction reliability for aluminum wiring with an oxide film, and the melting point of the solder particles is set below the assembly temperature, so the solder particles are melted in the pressure bonding step The melting solder is combined with the electrode metal of the LED element to obtain higher adhesion and excellent heat dissipation characteristics.

再者,於圖10中,作為參考表示樹脂黏合劑之散熱特性。樹脂A係將熱導率調整為10W/mK之例,樹脂B係將熱導率調整為30W/mK之例,樹脂C係將熱導率調整為50W/mK之例,樹脂D係將熱導率調整為70W/mK之例。通常,已知若接著劑層中之散熱樹脂之體積率(vol%)不變高,則無法獲得散熱特性。熱阻係以層厚/(接著面積×熱導率)定義,故而若層厚過大則熱阻變高,因此可知粒徑較大之散熱材料係使層厚變大,故而欠佳。 In addition, in FIG. 10, the heat dissipation characteristic of the resin adhesive is shown as a reference. Resin A is an example where the thermal conductivity is adjusted to 10W/mK, Resin B is an example where the thermal conductivity is adjusted to 30W/mK, Resin C is an example where the thermal conductivity is adjusted to 50W/mK, and Resin D is a thermal example An example of conductivity adjustment to 70W/mK. Generally, it is known that if the volume ratio (vol%) of the heat-dissipating resin in the adhesive layer is not high, the heat dissipation characteristics cannot be obtained. The thermal resistance is defined by the layer thickness/(adjacent area×thermal conductivity). Therefore, if the layer thickness is too large, the thermal resistance becomes high. Therefore, it can be seen that the heat dissipation material with a larger particle size increases the layer thickness, which is not good.

[第2實施例] [Second Embodiment]

以下,對本發明之第2實施例進行說明。於本實施例中,製作各種異 向性導電接著劑,使用該等異向性導電接著劑於基板上搭載LED元件而製作LED構裝樣品,對接著強度、及導通電阻進行評價。再者,本發明並不限定於該等實施例。 Hereinafter, the second embodiment of the present invention will be described. In this embodiment, various Anisotropic conductive adhesive, using these anisotropic conductive adhesives to mount an LED element on a substrate to prepare an LED structure sample, and evaluated the adhesive strength and on-resistance. Furthermore, the invention is not limited to these embodiments.

[剝離強度之測定] [Measurement of Peel Strength]

於由陶瓷所構成之白色板上,以厚度成為100μm之方式塗佈異向性導電接著劑,以180℃-1.5N-30sec之條件熱壓接1.51nm×10mm之鋁片,從而製作接合體。 On a white plate made of ceramics, anisotropic conductive adhesive is applied with a thickness of 100 μm, and an aluminum sheet of 1.51 nm×10 mm is thermocompression-bonded under the conditions of 180° C.-1.5 N-30 sec to produce a bonded body .

如圖4所示,使用拉力試驗機,以拉伸速度50mm/sec向90°之Y軸方向剝離接合體之鋁片,測定該剝離所需之剝離強度之最大值。 As shown in FIG. 4, using a tensile tester, the aluminum sheet of the bonded body was peeled in the Y-axis direction of 90° at a tensile speed of 50 mm/sec, and the maximum value of peel strength required for the peeling was measured.

[LED構裝樣品之製作] [Production of LED construction samples]

如圖5所示,製作LED構裝樣品。於平台上排列多個間距為50μm之配線基板(50μm之Al配線-25μm之PI(聚醯亞胺)層-50μm之Al基底)51,於各配線基板51上塗佈約10μg之異向性導電接著劑50。於異向性導電接著劑50上,搭載Cree公司製造之LED晶片(商品名:DA3547,最大額定:150mA,尺寸:0.35mm×0.46mm)52,使用熱加壓工具53進行倒裝晶片構裝,從而獲得LED構裝樣品。 As shown in Fig. 5, a sample of the LED structure was fabricated. A plurality of wiring substrates with a pitch of 50 μm (Al wiring of 50 μm—PI (polyimide) layer of 50 μm—Al base of 50 μm) are arranged on the platform, and an anisotropy of about 10 μg is coated on each wiring substrate 51 Conductive adhesive 50. On the anisotropic conductive adhesive 50, an LED chip (trade name: DA3547, maximum rating: 150mA, size: 0.35mm×0.46mm) 52 manufactured by Cree is mounted, and a flip chip is mounted using a hot press tool 53 , So as to obtain LED construction samples.

[晶片剪切強度之測定] [Measurement of wafer shear strength]

如圖6所示,使用晶片剪切測試機,以工具54之剪切速度20μm/sec、25℃之條件測定各LED構裝樣品之接合強度。 As shown in FIG. 6, using a wafer shear tester, the bonding strength of each LED mounting sample was measured under the conditions of the shear speed of the tool 54 at 20 μm/sec and 25°C.

[彎曲試驗前之導通電阻之評價] [Evaluation of on-resistance before bending test]

測定各LED構裝樣品之初期、冷熱循環試驗(TCT)後之導通電阻。冷熱循環試驗係將LED構裝樣品於-40℃及100℃之環境中各暴露30分 鐘,進行1000循環將其作為1循環之冷熱循環而測定導通電阻。導通電阻之評價係測定If=50mA時之Vf值,將自試驗成績表之Vf值之Vf值之上升程度未達5%之情形設為「○」,將5%以上之情形設為「×」。 The on-resistance of each LED configuration sample was measured at the initial stage and after the thermal cycle test (TCT). The hot and cold cycle test is to expose the LED configuration sample to -40℃ and 100℃ for 30 minutes each Then, 1000 cycles were performed as a cycle of cooling and heating, and the on-resistance was measured. The evaluation of the on-resistance is to measure the Vf value at If=50mA, and the degree of increase of the Vf value from the Vf value of the test score table is less than 5% is set to "○", and the case of more than 5% is set to "× ".

[彎曲試驗後之導通電阻值之評價] [Evaluation of on-resistance value after bending test]

如圖11及圖12所示,於進行向圓筒形之試驗輥55之側面壓抵各LED構裝樣品而使其彎曲之試驗後,測定導通電阻。具體而言,LED晶片52係設為大致長方形,故而分別各進行1次如下之試驗:如圖11所示,於LED晶片52之長邊方向(X軸方向)捲繞配線基板51之試驗;及如圖12所示,於LED晶片52之短邊方向(Y軸方向)捲繞配線基板51之試驗。 As shown in FIGS. 11 and 12, after conducting a test in which each LED mounting sample was pressed against the side of the cylindrical test roller 55 to bend it, the on-resistance was measured. Specifically, the LED wafer 52 is substantially rectangular, so each of the following tests is performed: the test of winding the wiring board 51 in the longitudinal direction (X-axis direction) of the LED wafer 52 as shown in FIG. 11; And as shown in FIG. 12, a test of winding the wiring board 51 in the short side direction (Y-axis direction) of the LED wafer 52.

又,試驗輥55係其半徑(R)越小,則對各LED構裝樣品之彎曲應力越強地發揮作用,故而使用多個直徑者分別進行試驗。具體而言,試驗輥55係使用直徑為20mm(R=10mm)、直徑為10mm(R=5mm)、及直徑為6mm(R=3mm)者進行彎曲試驗,對各別測定導通電阻。導通電阻之評價係測定If=50mA時之Vf值,將自試驗成績表之Vf值之Vf值之上升程度未達5%之情形設為「○」,將5%以上之情形設為「×」。 In addition, the smaller the radius (R) of the test roller 55, the stronger the bending stress exerted on each LED mounting sample. Therefore, a plurality of diameters are used for the test. Specifically, the test roller 55 was subjected to a bending test using a diameter of 20 mm (R=10 mm), a diameter of 10 mm (R=5 mm), and a diameter of 6 mm (R=3 mm), and the on-resistance was measured for each. The evaluation of the on-resistance is to measure the Vf value at If=50mA, and the degree of increase of the Vf value from the Vf value of the test score table is less than 5% is set to "○", and the case of more than 5% is set to "× ".

此處,於異向性導電接著劑對配線基板之接著力較弱之情形時,在彎曲試驗後導通特性消失、即導通電阻值上升。其原因在於,於接著力較弱之情形時,存在因彎曲試驗而於電極與配線之間之構件間產生距離,從而導電性粒子之接觸消失之情形。 Here, in the case where the adhesion of the anisotropic conductive adhesive to the wiring substrate is weak, the conduction characteristics disappear after the bending test, that is, the on-resistance value increases. The reason for this is that, in the case where the adhesion force is weak, there is a case where a distance is generated between the member between the electrode and the wiring due to the bending test, and the contact of the conductive particles disappears.

[綜合評價] [Overview]

將初期及冷熱循環試驗後之導通電阻值均為「○」、剝離強度為2.0N以上、晶片剪切強度為5.0N以上、及彎曲試驗後之導通性評價均為「○」 者評價為「OK」,將除此之外者評價為「NG」。 The on-resistance values after the initial and after the thermal cycle test are both "○", the peel strength is 2.0 N or more, the wafer shear strength is 5.0 N or more, and the continuity evaluation after the bending test is "○" The person evaluated as "OK", and the others were evaluated as "NG".

[實施例7] [Example 7]

使焊料熔點為150℃之焊料粒子30質量份及導電性粒子(品名:AUL704,積水化學工業公司製造)10質量份分散於由作為黏合劑A的脂環式環氧化合物(品名:Celloxide2021P,Daicel化學公司製造)100質量份、潛伏性陽離子硬化劑(鋁螯合物系潛伏性硬化劑)5質量份、丙烯酸樹脂(丙烯酸丁酯(BA):15%,丙烯酸乙酯(EA):63%,丙烯酸腈(AN):20%,丙烯酸(AA):1wt%,甲基丙烯酸2-羥基乙酯(HEMA):1wt%,重量平均分子量Mw:70萬)3質量份所構成之接著劑中,製作異向性導電接著劑。又,製作LED構裝樣品時之硬化條件係設為180℃-1.5N-30sec。 30 parts by mass of solder particles with a melting point of 150°C and 10 parts by mass of conductive particles (product name: AUL704, manufactured by Sekisui Chemical Industry Co., Ltd.) are dispersed in an alicyclic epoxy compound (product name: Celloxide2021P, Daicel) 100 parts by mass of chemical company, 5 parts by mass of latent cationic hardener (aluminum chelate-based latent hardener), acrylic resin (butyl acrylate (BA): 15%, ethyl acrylate (EA): 63% , Acrylonitrile (AN): 20%, Acrylic acid (AA): 1wt%, 2-hydroxyethyl methacrylate (HEMA): 1wt%, weight average molecular weight Mw: 700,000) 3 parts by mass of the adhesive To produce anisotropic conductive adhesive. In addition, the curing conditions at the time of manufacturing the LED structure sample were set to 180°C-1.5N-30sec.

再者,於各實施例中使用焊料粒子之平均粒徑為5μm、7μm、10μm、12μm、25μm者。未於上述範圍內之粒徑中發現顯著差異,故而省略各個粒徑之試驗結果,藉由使用至少上述範圍之粒徑者而可獲得本申請案實施例之結果。於以下之實施例及調配有焊料粒子之比較例中亦相同。 In addition, in each Example, the average particle diameter of the solder particle was 5 micrometers, 7 micrometers, 10 micrometers, 12 micrometers, and 25 micrometers. No significant difference was found in the particle size within the above range, so the test results for each particle size were omitted, and the results of the examples of the present application can be obtained by using a particle size of at least the above range. The same applies to the following examples and comparative examples prepared with solder particles.

於表4中,表示實施例7之各評價結果。初期之剝離強度為4.0N。又,LED構裝樣品之初期之晶片剪切強度為8.5N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為○,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為○、直徑為10mm時為○、直徑為6mm時為○。因此,綜合評價為OK。 Table 4 shows the evaluation results of Example 7. The initial peel strength was 4.0N. In addition, the initial wafer shear strength of the LED assembly sample was 8.5N. In addition, the initial conductivity evaluation of the LED structure sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ○, and the conduction evaluation after the bending test was ○ when the diameter of the test roller was 20 mm. It is ○ when it is 10 mm and ○ when it is 6 mm in diameter. Therefore, the comprehensive evaluation is OK.

[實施例8] [Example 8]

將焊料粒子之熔點設為150℃,將調配設為80質量份,除此之外,與 實施例7相同地製作異向性導電接著劑。 The melting point of the solder particles is set to 150°C, and the formulation is set to 80 parts by mass. In Example 7, an anisotropic conductive adhesive was produced in the same manner.

於表4中,表示實施例8之各評價結果。初期之剝離強度為4.0N。又,LED構裝樣品之初期之晶片剪切強度為8.5N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為○,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為○、直徑為10mm時為○、直徑為6mm時為○。因此,綜合評價為OK。 Table 4 shows the evaluation results of Example 8. The initial peel strength was 4.0N. In addition, the initial wafer shear strength of the LED assembly sample was 8.5N. In addition, the initial conductivity evaluation of the LED structure sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ○, and the conduction evaluation after the bending test was ○ when the diameter of the test roller was 20 mm. It is ○ when it is 10 mm and ○ when it is 6 mm in diameter. Therefore, the comprehensive evaluation is OK.

[實施例9] [Example 9]

將焊料粒子之熔點設為170℃,將調配設為30質量份,除此之外,與實施例7相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 7 except that the melting point of the solder particles was 170°C and the formulation was 30 parts by mass.

於表4中,表示實施例9之各評價結果。初期之剝離強度為4.0N。又,LED構裝樣品之初期之晶片剪切強度為8.5N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為○,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為○、直徑為10mm時為○、直徑為6mm時為○。因此,綜合評價為OK。 Table 4 shows the evaluation results of Example 9. The initial peel strength was 4.0N. In addition, the initial wafer shear strength of the LED assembly sample was 8.5N. In addition, the initial conductivity evaluation of the LED structure sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ○, and the conduction evaluation after the bending test was ○ when the diameter of the test roller was 20 mm. It is ○ when it is 10 mm and ○ when it is 6 mm in diameter. Therefore, the comprehensive evaluation is OK.

[實施例10] [Example 10]

將焊料粒子之熔點設為170℃,將調配設為80質量份,除此之外,與實施例7相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 7 except that the melting point of the solder particles was 170°C and the formulation was 80 parts by mass.

於表4中,表示實施例10之各評價結果。初期之剝離強度為4.0N。又,LED構裝樣品之初期之晶片剪切強度為8.5N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為○,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為○、直徑為10mm時為○、直徑為6mm時為○。因此,綜合評價為OK。 Table 4 shows the evaluation results of Example 10. The initial peel strength was 4.0N. In addition, the initial wafer shear strength of the LED assembly sample was 8.5N. In addition, the initial conductivity evaluation of the LED structure sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ○, and the conduction evaluation after the bending test was ○ when the diameter of the test roller was 20 mm. It is ○ when it is 10 mm and ○ when it is 6 mm in diameter. Therefore, the comprehensive evaluation is OK.

[比較例21] [Comparative Example 21]

未調配焊料粒子,除此之外,與實施例7相同地製作異向性導電接著劑。 An anisotropic conductive adhesive was prepared in the same manner as in Example 7 except that the solder particles were not prepared.

於表4中,表示比較例21之各評價結果。初期之剝離強度為4.0N。又,LED構裝樣品之初期之晶片剪切強度為8.5N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為○,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為○、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 4 shows the evaluation results of Comparative Example 21. The initial peel strength was 4.0N. In addition, the initial wafer shear strength of the LED assembly sample was 8.5N. In addition, the initial conductivity evaluation of the LED structure sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ○, and the conduction evaluation after the bending test was ○ when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

[比較例22] [Comparative Example 22]

將焊料粒子之熔點設為150℃,將調配設為160質量份,除此之外,與實施例7相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 7 except that the melting point of the solder particles was 150°C and the formulation was 160 parts by mass.

於表4中,表示比較例22之各評價結果。初期之剝離強度為1.2N。又,LED構裝樣品之初期之晶片剪切強度為2.0N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為×、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 4 shows the evaluation results of Comparative Example 22. The initial peel strength was 1.2N. In addition, the initial wafer shear strength of the LED assembly sample was 2.0N. In addition, the initial conductivity evaluation of the LED mounting sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ×, and the conductivity evaluation after the bending test was × when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

[比較例23] [Comparative Example 23]

將焊料粒子之熔點設為170℃,將調配設為160質量份,除此之外,與實施例7相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 7 except that the melting point of the solder particles was 170°C and the formulation was 160 parts by mass.

於表4中,表示比較例23之各評價結果。初期之剝離強度為1.2N。又,LED構裝樣品之初期之晶片剪切強度為2.0N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之 導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為×、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 4 shows the evaluation results of Comparative Example 23. The initial peel strength was 1.2N. In addition, the initial wafer shear strength of the LED assembly sample was 2.0N. In addition, the initial conductivity evaluation of the LED mounting sample before the bending test was ○, and after 1000 cycles of the cold and hot cycle test The conductivity evaluation was ×, and the conductivity evaluation after the bending test was × when the diameter of the test roller was 20 mm, × when the diameter was 10 mm, and × when the diameter was 6 mm. Therefore, the comprehensive evaluation is NG.

[比較例24] [Comparative Example 24]

將焊料粒子之熔點設為200℃,將調配設為30質量份,除此之外,與實施例7相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 7 except that the melting point of the solder particles was 200° C. and the formulation was 30 parts by mass.

於表4中,表示比較例24之各評價結果。初期之剝離強度為4.0N。又,LED構裝樣品之初期之晶片剪切強度為8.5N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為×、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 4 shows the evaluation results of Comparative Example 24. The initial peel strength was 4.0N. In addition, the initial wafer shear strength of the LED assembly sample was 8.5N. In addition, the initial conductivity evaluation of the LED mounting sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ×, and the conductivity evaluation after the bending test was × when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

[比較例25] [Comparative Example 25]

將焊料粒子之熔點設為200℃,將調配設為80質量份,除此之外,與實施例7相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 7 except that the melting point of the solder particles was 200° C. and the formulation was 80 parts by mass.

於表4中,表示比較例25之各評價結果。初期之剝離強度為4.0N。又,LED構裝樣品之初期之晶片剪切強度為8.5N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為×、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 4 shows the evaluation results of Comparative Example 25. The initial peel strength was 4.0N. In addition, the initial wafer shear strength of the LED assembly sample was 8.5N. In addition, the initial conductivity evaluation of the LED mounting sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ×, and the conductivity evaluation after the bending test was × when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

[比較例26] [Comparative Example 26]

將焊料粒子之熔點設為200℃,將調配設為160質量份,除此之外,與實施例7相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Example 7 except that the melting point of the solder particles was 200°C and the formulation was 160 parts by mass.

於表4中,表示比較例26之各評價結果。初期之剝離強度 為1.2N。又,LED構裝樣品之初期之晶片剪切強度為2.0N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為○,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為○、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 4 shows the evaluation results of Comparative Example 26. Initial peel strength It is 1.2N. In addition, the initial wafer shear strength of the LED assembly sample was 2.0N. In addition, the initial conductivity evaluation of the LED structure sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ○, and the conduction evaluation after the bending test was ○ when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

[比較例27] [Comparative Example 27]

使導電性粒子(品名:AUL704,積水化學工業公司製造)10質量份分散於由作為黏合劑B之脂環式環氧化合物(品名:Celloxide2021P、Daicel化學公司製造)50質量份、酸酐硬化劑(甲基六氫鄰苯二甲酸酐)40質量份、丙烯酸樹脂(BA:15%,EA:63%,AN:20%,AA:1wt%,HEMA:1wt%,Mw:20萬)3質量份所構成之接著劑中,製作異向性導電接著劑。未添加焊料粒子。又,製作LED構裝樣品時之硬化條件係設為230℃-1.5N-30sec。 Disperse 10 parts by mass of conductive particles (product name: AUL704, manufactured by Sekisui Chemical Co., Ltd.) in 50 parts by mass of an alicyclic epoxy compound (product name: Celloxide 2021P, manufactured by Daicel Chemical Company) as an adhesive B, and an anhydride hardener ( 40 parts by mass of methylhexahydrophthalic anhydride, 3 parts by mass of acrylic resin (BA: 15%, EA: 63%, AN: 20%, AA: 1wt%, HEMA: 1wt%, Mw: 200,000) Among the constructed adhesives, anisotropic conductive adhesives are produced. No solder particles are added. In addition, the curing conditions at the time of manufacturing the LED structure sample were 230°C-1.5N-30sec.

於表5中,表示比較例27之各評價結果。初期之剝離強度未達0.5N。又,LED構裝樣品之初期之晶片剪切強度為3.8N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為×、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 5 shows the evaluation results of Comparative Example 27. The initial peel strength did not reach 0.5N. In addition, the initial wafer shear strength of the LED assembly sample was 3.8N. In addition, the initial conductivity evaluation of the LED mounting sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ×, and the conductivity evaluation after the bending test was × when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

[比較例28] [Comparative Example 28]

將焊料粒子之熔點設為170℃,將調配設為80質量份而添加於接著劑中,除此之外,與比較例27相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Comparative Example 27 except that the melting point of the solder particles was 170° C. and the formulation was added to the adhesive by 80 parts by mass.

於表5中,表示比較例28之各評價結果。初期之剝離強度未達0.5N。又,LED構裝樣品之初期之晶片剪切強度為3.8N。又,彎曲試 驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為×、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 5 shows the evaluation results of Comparative Example 28. The initial peel strength did not reach 0.5N. In addition, the initial wafer shear strength of the LED assembly sample was 3.8N. Again, bending test The initial conductivity evaluation of the LED configuration sample before the inspection is ○, the conductivity evaluation after the 1000 cycle of the heat and cold cycle test is ×, and the conductivity evaluation after the bending test is × when the diameter of the test roller is 20 mm, and when the diameter is 10 mm It is × when the diameter is 6 mm. Therefore, the comprehensive evaluation is NG.

[比較例29] [Comparative Example 29]

代替脂環式環氧化合物而使用環烯100質量份作為黏合劑C,除此之外,與實施例7相同地製作異向性導電接著劑。未添加焊料粒子。又,製作LED構裝樣品時之硬化條件係設為180℃-1.5N-240sec。 An anisotropic conductive adhesive was prepared in the same manner as in Example 7 except that 100 parts by mass of cycloolefin was used as the binder C instead of the alicyclic epoxy compound. No solder particles are added. In addition, the curing conditions at the time of manufacturing the LED structure sample were set to 180°C-1.5N-240sec.

於表5中,表示比較例29之各評價結果。初期之剝離強度為1.4N。又,LED構裝樣品之初期之晶片剪切強度為7.2N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為×、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 5 shows the evaluation results of Comparative Example 29. The initial peel strength was 1.4N. In addition, the initial wafer shear strength of the LED assembly sample was 7.2N. In addition, the initial conductivity evaluation of the LED mounting sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ×, and the conductivity evaluation after the bending test was × when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

[比較例30] [Comparative Example 30]

將焊料粒子之熔點設為170℃,將調配設為80質量份而添加於接著劑中,除此之外,與比較例29相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Comparative Example 29 except that the melting point of the solder particles was 170° C. and the formulation was added to the adhesive by 80 parts by mass.

於表5中,表示比較例30之各評價結果。初期之剝離強度為1.4N。又,LED構裝樣品之初期之晶片剪切強度為7.2N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為×、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 5 shows the evaluation results of Comparative Example 30. The initial peel strength was 1.4N. In addition, the initial wafer shear strength of the LED assembly sample was 7.2N. In addition, the initial conductivity evaluation of the LED mounting sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ×, and the conductivity evaluation after the bending test was × when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

[比較例31] [Comparative Example 31]

代替脂環式環氧化合物而使用雙酚F型環氧化合物作為黏合劑D,使 用陰離子硬化劑(胺系硬化劑)來代替潛伏性陽離子硬化劑,且未調配丙烯酸樹脂,除此之外,與實施例7相同地製作異向性導電接著劑。未添加焊料粒子。又,製作LED構裝樣品時之硬化條件係設為150℃-1.5N-30sec。 Instead of an alicyclic epoxy compound, a bisphenol F-type epoxy compound is used as the binder D, so that An anisotropic conductive adhesive was produced in the same manner as in Example 7 except that the latent cationic hardener was replaced with an anionic hardener (amine-based hardener), and the acrylic resin was not formulated. No solder particles are added. In addition, the curing conditions at the time of manufacturing the LED mounting sample were set to 150°C-1.5N-30sec.

於表5中,表示比較例31之各評價結果。初期之剝離強度為2.5N。又,LED構裝樣品之初期之晶片剪切強度為7.1N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為○、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 5 shows the evaluation results of Comparative Example 31. The initial peel strength was 2.5N. In addition, the wafer shear strength at the initial stage of the LED assembly sample was 7.1N. In addition, the initial conductivity evaluation of the LED structure sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ×, and the conductivity evaluation after the bending test was ○ when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

[比較例32] [Comparative Example 32]

將焊料粒子之熔點設為170℃,將調配設為80質量份而添加於接著劑中,除此之外,與比較例31相同地製作異向性導電接著劑。 The anisotropic conductive adhesive was prepared in the same manner as in Comparative Example 31 except that the melting point of the solder particles was 170° C. and the formulation was added to the adhesive by 80 parts by mass.

於表5中,表示比較例32之各評價結果。初期之剝離強度為2.5N。又,LED構裝樣品之初期之晶片剪切強度為7.1N。又,彎曲試驗前之LED構裝樣品之初期之導通性評價為○,冷熱循環試驗1000循環後之導通性評價為×,彎曲試驗後之導通評價係試驗輥之直徑為20mm時為○、直徑為10mm時為×、直徑為6mm時為×。因此,綜合評價為NG。 Table 5 shows the evaluation results of Comparative Example 32. The initial peel strength was 2.5N. In addition, the wafer shear strength at the initial stage of the LED assembly sample was 7.1N. In addition, the initial conductivity evaluation of the LED structure sample before the bending test was ○, the conductivity evaluation after the 1000-cycle cooling and heating test was ×, and the conductivity evaluation after the bending test was ○ when the diameter of the test roller was 20 mm. It is × when it is 10 mm, and it is × when it is 6 mm in diameter. Therefore, the comprehensive evaluation is NG.

Figure 104116412-A0202-12-0038-4
Figure 104116412-A0202-12-0038-4

Figure 104116412-A0202-12-0039-6
Figure 104116412-A0202-12-0039-6

比較例21未調配焊料粒子,故而不會形成熔解焊料而無法獲得投錨效應,故而於異向性導電接著劑與LED元件之間接著力下降,於使用直徑為10mm以下之試驗輥之彎曲試驗後,導通可靠性變低。 In Comparative Example 21, the solder particles were not formulated, so the molten solder was not formed and the anchoring effect could not be obtained. Therefore, the adhesion between the anisotropic conductive adhesive and the LED element was reduced. After the bending test using a test roller with a diameter of 10 mm or less, The conduction reliability becomes low.

又,比較例22、23係較多地調配有焊料粒子,故而雖形成熔解焊料,但於鋁配線基板與異向性導電接著劑之間接著力下降,從而於異向性導電接著劑與LED元件之間接著力下降,於彎曲試驗後,導通可靠性變低。 In addition, Comparative Examples 22 and 23 have a large amount of solder particles. Therefore, although molten solder is formed, the adhesion between the aluminum wiring substrate and the anisotropic conductive adhesive decreases, which results in the anisotropic conductive adhesive and the LED device. Then the bonding force decreases, and after the bending test, the conduction reliability becomes low.

又,比較例24、25、26係焊料粒子之熔點設為200℃,故而焊料不會於壓接步驟中充分地熔解,而不會產生由熔解焊料實現之金屬結合,從而於異向性導電接著劑與LED元件之間接著力下降,於TCT試驗後及彎曲試驗後,導通可靠性變低。 In addition, the melting point of the solder particles of the comparative examples 24, 25, and 26 is set to 200°C, so the solder will not be sufficiently melted in the crimping step, and the metal bonding by the melted solder will not occur, thereby causing anisotropic conduction The adhesive force between the adhesive and the LED element decreased, and the conduction reliability became lower after the TCT test and after the bending test.

又,於比較例27、28中,作為黏合劑B,使用酸酐作為硬化劑,故而無論有無焊料粒子,於TCT試驗後及彎曲試驗後,導通可靠性均變低。藉此,可知存在因黏合劑A與焊料粒子之組合產生之效果。 In Comparative Examples 27 and 28, acid anhydride was used as the hardener as the binder B. Therefore, regardless of the presence or absence of solder particles, the conduction reliability became lower after the TCT test and after the bending test. From this, it can be seen that there is an effect due to the combination of the adhesive A and the solder particles.

又,於比較例29、30中,作為黏合劑C,使用環烯(cycloolefin)作為主劑,故而無論有無焊料粒子,於TCT試驗後及彎曲試驗後,導通可靠性均變低。藉此,可知存在因黏合劑A與焊料粒子之組合產生之效果。 In Comparative Examples 29 and 30, cycloolefin was used as the main agent as the binder C. Therefore, regardless of the presence or absence of solder particles, the conduction reliability became lower after the TCT test and after the bending test. From this, it can be seen that there is an effect due to the combination of the adhesive A and the solder particles.

又,於比較例31、32中,作為黏合劑D,因胺系硬化劑之極性效果而對鋁具有接著力,但於彎曲試驗中,至直徑為10mm以下之試驗輥未能耐受導通評價,而導通可靠性較低。藉此,可知存在因黏合劑A與焊料粒子之組合產生之效果。 Also, in Comparative Examples 31 and 32, as the adhesive D, due to the polar effect of the amine-based hardener, it has adhesion to aluminum, but in the bending test, the test roller with a diameter of 10 mm or less failed to withstand conduction evaluation , And conduction reliability is low. From this, it can be seen that there is an effect due to the combination of the adhesive A and the solder particles.

另一方面,實施例7~10係調配有脂環式環氧化合物、潛伏 性陽離子硬化劑、及具有丙烯酸(AA)與甲基丙烯酸2-羥基乙酯(HEMA)之丙烯酸樹脂,故而具有光學用途之特性,進而,可對具有氧化膜之鋁配線獲得較高之接著力及優異之導通可靠性,又,焊料粒子之熔點係設為構裝溫度以下,故而於壓接步驟中焊料粒子熔解,熔解焊料與LED元件之電極金屬結合,於TCT試驗後及彎曲試驗後,亦可獲得較高之接著力及優異之導通可靠性。 On the other hand, Examples 7 to 10 were formulated with alicyclic epoxy compounds, latent Cationic hardener and acrylic resin with acrylic acid (AA) and 2-hydroxyethyl methacrylate (HEMA), so it has the characteristics of optical applications, and furthermore, it can obtain high adhesion to aluminum wiring with oxide film And excellent conduction reliability, and the melting point of the solder particles is set below the assembly temperature, so the solder particles are melted in the crimping step, the molten solder is combined with the electrode metal of the LED element, after the TCT test and after the bending test, It can also obtain higher adhesion and excellent conduction reliability.

11‧‧‧配線 11‧‧‧Wiring

11a‧‧‧氧化膜 11a‧‧‧Oxide film

12‧‧‧環氧化合物之海 12‧‧‧Sea of Epoxy Compounds

13‧‧‧丙烯酸樹脂之島 13‧‧‧ Island of acrylic resin

Claims (14)

一種接著劑,其含有環氧樹脂、陽離子觸媒、重量平均分子量為50000~900000之丙烯酸樹脂、及焊料粒子,且上述丙烯酸樹脂包含0.5~10wt%之丙烯酸、及0.5~10wt%之具有羥基之丙烯酸酯;上述環氧樹脂至少包含脂環式環氧化合物或氫化環氧化合物。 An adhesive comprising epoxy resin, cationic catalyst, acrylic resin with a weight average molecular weight of 50,000 to 900,000, and solder particles, and the acrylic resin contains 0.5 to 10% by weight of acrylic acid and 0.5 to 10% by weight of hydroxyl group Acrylate; the above epoxy resin contains at least an alicyclic epoxy compound or a hydrogenated epoxy compound. 如申請專利範圍第1項之接著劑,其中,上述焊料粒子之調配量為50質量份以上且未達150質量份。 For example, the adhesive agent according to item 1 of the patent application, wherein the amount of the solder particles is 50 parts by mass or more and less than 150 parts by mass. 如申請專利範圍第1或2項之接著劑,其中,上述焊料粒子之平均粒徑為3μm以上且未達30μm。 As for the adhesive agent according to item 1 or 2 of the patent application, the average particle diameter of the above solder particles is 3 μm or more and less than 30 μm. 如申請專利範圍第1或2項之接著劑,其中,上述丙烯酸樹脂之含量相對於上述環氧樹脂100質量份為1~10質量份。 As for the adhesive agent according to item 1 or 2 of the patent application, the content of the acrylic resin is 1 to 10 parts by mass relative to 100 parts by mass of the epoxy resin. 如申請專利範圍第3項之接著劑,其中,上述丙烯酸樹脂之含量相對於上述環氧樹脂100質量份為1~10質量份。 As for the adhesive agent of claim 3, the content of the acrylic resin is 1 to 10 parts by mass relative to 100 parts by mass of the epoxy resin. 如申請專利範圍第1或2項之接著劑,其中,上述具有羥基之丙烯酸酯係選自由甲基丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基丙酯、丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯所組成之群中之1種以上。 Adhesives as claimed in item 1 or 2 of the patent application, wherein the above-mentioned acrylate having a hydroxyl group is selected from 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 2-hydroxyethyl acrylate, acrylic acid One or more of the group consisting of 2-hydroxypropyl ester. 如申請專利範圍第3項之接著劑,其中,上述具有羥基之丙烯酸酯係選自由甲基丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基丙酯、丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯所組成之群中之1種以上。 Adhesive as claimed in item 3 of the patent application, wherein the acrylate having a hydroxyl group is selected from 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 2-hydroxyethyl acrylate, acrylic acid 2- One or more of the group consisting of hydroxypropyl esters. 如申請專利範圍第1或2項之接著劑,其中,上述丙烯酸樹脂包含丙烯酸丁酯、丙烯酸乙酯、及丙烯酸腈。 As the adhesive agent according to item 1 or 2 of the patent application, the acrylic resin includes butyl acrylate, ethyl acrylate, and acrylic nitrile. 如申請專利範圍第3項之接著劑,其中,上述丙烯酸樹脂包含丙烯酸丁酯、丙烯酸乙酯、及丙烯酸腈。 As the adhesive agent of claim 3 of the patent application, the acrylic resin includes butyl acrylate, ethyl acrylate, and nitrile acrylate. 如申請專利範圍第1或2項之接著劑,其中,上述陽離子觸媒為鋁螯合物系潛伏性硬化劑。 As the adhesive agent of claim 1 or 2, the above cationic catalyst is an aluminum chelate latent hardener. 如申請專利範圍第3項之接著劑,其中,上述陽離子觸媒為鋁螯合物系潛伏性硬化劑。 As the adhesive agent of claim 3, the cationic catalyst is an aluminum chelate latent hardener. 如申請專利範圍第1或2項之接著劑,其含有導電性粒子。 If the adhesive agent of the patent application scope item 1 or 2 contains conductive particles. 如申請專利範圍第3項之接著劑,其含有導電性粒子。 For example, the adhesive agent according to item 3 of the patent application contains conductive particles. 一種連接構造體,其具備:基板,其具有於表面形成有氧化物之配線圖案;異向性導電膜,其形成於上述配線圖案之電極上;及電子零件,其構裝於上述異向性導電膜上;且上述異向性導電膜為異向性導電接著劑之硬化物,該異向性導電接著劑含有脂環式環氧化合物或氫化環氧化合物、陽離子觸媒、重量平均分子量為50000~900000之丙烯酸樹脂、導電性粒子、及焊料粒子,上述丙烯酸樹脂包含0.5~10wt%之丙烯酸、及0.5~10wt%之具有羥基之丙烯酸酯。 A connection structure comprising: a substrate having a wiring pattern having an oxide formed on the surface; an anisotropic conductive film formed on the electrode of the wiring pattern; and an electronic component constructed on the anisotropy On the conductive film; and the anisotropic conductive film is a cured product of an anisotropic conductive adhesive, the anisotropic conductive adhesive contains an alicyclic epoxy compound or a hydrogenated epoxy compound, a cationic catalyst, and the weight average molecular weight is 50000~900000 acrylic resin, conductive particles, and solder particles, the acrylic resin contains 0.5~10wt% acrylic acid, and 0.5~10wt% acrylic acid ester with hydroxyl group.
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EP3147340A1 (en) 2017-03-29
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EP3147340A4 (en) 2018-01-03

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