TWI692117B - Process for manufacturing vertical cylindrical reaction chamber and linear luminous body of micron LED epitaxy - Google Patents

Abstract

A process for manufacturing a microtube LED epitaxial column reaction chamber and a linear luminous body, especially a linear body is used as the epitaxial crystalline baseline, and it is placed on the upper end of the column reaction chamber in a vertical manner Positioning, then use organic metal vapor deposition (MOCVD) to spray the organic compound gas formed by the element to be combined with the organic root on the heated linear crystal crystalline baseline by spraying, resulting in the linear body in the cylindrical reaction chamber of the vertical cylinder A chemical reaction takes place on the surface of the crystalline baseline and forms the required multi-layer single crystal thin film (epitaxy "Epitaxy"), followed by metal evaporation, exposure/development, and photoresist coating, etching, half-cut/power-on point side, and Fully cut (cut off), crystal expansion/appearance inspection, and finally packaged into the warehouse, so as to achieve the linear luminous body function of the linear crystalline baseline with a circumferential surface after epitaxy, and to obtain the grain volume of the ultrafine epitaxial linear body cum The process technology that can effectively cut and assemble is its characteristic.

Description

Process for manufacturing vertical cylindrical reaction chamber and linear luminous body of micron LED epitaxial

The invention relates to a manufacturing process of an upright cylindrical cylindrical reaction cavity and a linear luminous body of a micron LED epitaxial, in particular to a micron LED using a linear body as the epitaxial crystalline baseline and heating the upright cylindrical cylindrical reaction cavity After the linear body crystallization baseline, the compound gas is used for spray coating and attachment to form an epitaxial process for forming an LED epitaxial wire body.

According to, the basic principle of LED: light-emitting diode is a special diode, also composed of semiconductors, these semiconductor materials will be pre-injection or doping and other processes to produce P, N structure, like other diodes , The current in the light-emitting diode can easily flow from the P pole (anode) to the N pole (negative electrode), but not in the opposite direction; that is, the combination of semiconductor holes (P type) and electrons (N type) to emit photons; Two different carrier holes and electrons flow from the electrode to the P and N architecture under the effect of different electrode voltages; when the hole and the electron meet and recombine, the electron will fall to a lower energy level, and at the same time The form releases energy, and the wavelength (color) of the light it emits is determined by the energy gap of the semiconductor materials that make up the P and N structures; since silicon and germanium are indirect energy gap materials, at normal temperature, electrons and electricity within these materials The recombination of the hole is a non-radiative transition. Such a transition does not release photons, but converts energy into heat energy, so the silicon and germanium diodes cannot emit light (it will emit light at a specific temperature of extremely low temperature, and must be at a special angle. It can be found that the brightness of the light emission is not obvious); the materials used for the light-emitting diode are all energy gap, so the energy will be released in the form of photons, and these forbidden band energy correspond to the light in the near infrared, visible or near ultraviolet band can In the early stages of development, light-emitting diodes using gallium arsenide (GaAs) can only emit infrared or red light. With the advancement of material science, various colors of light-emitting diodes can be manufactured today; the breakthrough of the current technical dilemma: since the discovery of light-emitting diodes, it has been widely used as the most basic and huge material demand for display and general lighting in the market. With the rapid advancement of technology, major manufacturers have been developing and manufacturing smaller die sizes with more advanced technology to allow the resolution of displays to be greatly improved, but the general process is based on a round wafer substrate (A) As the tip of the production (please refer to the first picture), as the wafer process is improved by the epitaxial technology, the yield is greatly improved. Only after the size of the die (B) is reduced, the reduced size is not ordinary. The naked eye can observe or assemble. How to cut and assemble in such a small volume has always been a technology that cannot be broken through. It is the one that is missing; it is generally traditional to cut into small pieces after epitaxial wafer substrate (A) Die (B), and die (B) need to be assembled one by one as a manual or machine, and die (B) as a single assembly method, often due to the quality of the welding is not good The rate is reduced, or the size of the die (B) is reduced to the naked eye and the machine cannot be assembled, and it is missing; please refer to the second figure for the manufacturing process of the traditional general light-emitting diode ( (Please follow the arrow to explain): The first process (C) is based on the substrate (C1); the second process (D) is coated with a first layer of n-type epi on the substrate (C1) ( D1) and the second layer (P-type epi) (D2); the third process (E) on the substrate (C1) the first layer of epitaxial (n-type epi) (D1) and the second layer (P- Type epi) (D2) The upper end is coated with a third layer of coating (ITP) (E1) and the lower end of the substrate (C1) is coated with an N electrode layer (E2); the fourth process (F) is coated on the third layer (ITP) (E1) coat a photoresist layer (F1); the fifth process (G) uses a shield (G1) on both ends of the photoresist layer (F1) and uses UV light in the center (G2) Irradiation (exposure/development) to form a recessed groove (G3) in the center; the sixth process (H) is formed in the center of the photoresist layer (F1) A metal vapor deposition layer (P electrode) (H1) is deposited on the upper surface of the recessed groove (G3); the seventh process (I) is etched by electric shock (I1); the eighth process (J) will epitaxial crystal Round half-cutting/power-on spot measurement and the ninth process (K) complete epitaxy (or cutting) of epitaxial wafers; the tenth process (L) is wafer expansion/appearance inspection, and finally the eleventh ( M) for packaging and storage.

Furthermore, the conventional light-emitting diode die manufacturing process requires about 21 processes (different process sequences depending on the display color), that is, the traditional organic metal vapor deposition chamber and light-emitting diode (die) manufacturing Process (please refer to the flow chart shown in the third figure): 1. Wafer cleaning, 2. Epitaxy, 3. Photoresist, 4. First mask, 5. Dry etching, 6. Metal evaporation , 7. Second mask, 8. Chemical etching, 9. Metal evaporation, 10. Third mask, 11. Chemical etching, 12. Fourth mask, 13. Metal evaporation, 14. Chemical etching Etching, 15. Thin film deposition, 16. Fifth mask, 17. Chemical etching, 18. Precision cutting, 19. Grain screening, 20. Packaging and storage, 21. Assembly and sales, etc. 21; due to the use of the display The number of die is very large, so after the size of the die is greatly reduced, it will be quite technical and difficult to assemble with the machine. Therefore, the yield of the assembly is often reduced. Simply put, if the die is assembled on the display The three-point sequence needs to be in the form of points, lines, and surfaces. The problem is that after the size of the die is greatly reduced (not visible to the naked eye), the machine cannot be assembled at all. Therefore, it is not feasible to assemble using the current die manufacturing method. The other is the missing; the other, refer to the traditional conventional organic metal vapor deposition (MOCVD) process method (as shown in the fourth diagram of the top view and front perspective implementation of the manufacturing plan schematic), in which the wafer carrier substrate (C1) Placed in a reaction chamber (N), wherein a gas inlet (N1) is provided at the upper end of the reaction chamber, and the gas inlet (N1) is provided with a gas nozzle (not shown), and A gas outlet (N2) is provided on the left and right sides of the reaction chamber (N), and an RF heater (O) is provided in the reaction chamber (N). By this, most wafers on the substrate (C1) of the wafer carrier The substrate (A) is in the reaction chamber (N) and is reacted The gas injected into the gas inlet (N1) at the upper end of the cavity (N) is used for the epitaxial coating process of the multi-layer thin film; according to this view, the organic metal vapor deposition (MOCVD) epitaxial method only coats the wafer surface with multiple layers Coating, and cutting to form most of the grains, and there are any problems as mentioned above; in accordance with the traditional process, the wafer substrate (A) is cut into fine grains (B) after epitaxy, and the crystal In the huge amount of grains (B), the manufacturing process is really difficult to transfer the total amount and weld each grain one by one, so the yield often has a large gap, and the product Cost is really a big disadvantage.

Therefore, according to the traditional manufacturing process mentioned above, the manufacturing process is complicated and complicated, and the epitaxial grain volume is too small, resulting in a low yield of post-production. Therefore, the inventors focus on this problem to improve, In the spirit of good research and development, and in conjunction with relevant technical engineers, the LED products are indispensable in the future of human life. It is the study of the manufacturing method of micron LEDs that finally created the micron LED of the invention. The process of the cylindrical cylindrical reaction chamber and the linear luminous body is expected to solve the problem that the LED molding die is too small to assemble and the process yield rate problem; based on the above purpose, the linear organic metal vapor deposition chamber and the light emitting of the present invention Diode (crystal line) manufacturing flow chart: 1. Wafer cleaning, 2. First epitaxy, 3. High temperature fusion, 4. Second epitaxy, 5. High temperature fusion, 6. Third epitaxy 7. Conductive mold (ITO), 8. Metal evaporation, 9. Dry etching, 10. Length cutting, 11. Power-on test, 12. Packaging and storage, etc. about 12; after the implementation of the above technical means in the present invention, available Several functions are as follows: 1 The reaction chamber system is set as a vertical cylindrical cylindrical reaction chamber, and the linear crystalline baseline is heated in the vertical cylindrical cylindrical reaction chamber, and the upper end of the vertical cylindrical cylindrical reaction chamber is provided with a plurality of Perforations of the crystalline base lines of linear bodies arranged at equal intervals so that the crystalline base lines of the linear bodies hang vertically through the perforations The organic compound gas is sprayed from the gas inlet at the center of the upper end surface of the upright cylindrical reaction chamber into the process of multi-channel cavity epitaxy. 2. By using the manufacturing method of the vertical cylindrical cylindrical reaction chamber of the present invention as an epitaxial device, a large number of epitaxial devices can be completed at one time, which is a feature. 3. With the linear body grains of the present invention, the linear body grains are used as the direct arrangement and laying of the display. Therefore, in the manufacturing process, only the etching is required, and it is not necessary to cut half or full cut into a single grain, which is characterized . 4. The linear body crystal grains of the present invention are connected in series and can be cut and assembled into a fine volume, which is a feature of it. 5. The linear body grains of the present invention are in series and integrated, so it is different from the old process of cutting and then assembling. After epitaxy, it is used in a linear arrangement and is characterized. 6. With the linear body die of the present invention, the linear body die can be formed at one time, and the number of formed die is larger than that of the conventional wafer manufacturing method. Therefore, under the cost of quantity, the cost is lower. For its characteristics.

In summary, the process of the vertical cylindrical cylindrical reaction chamber and the linear luminous body of the micron LED epitaxial of the present invention can achieve the high economic value of the simple process, the technical means and the structure adopted Features, a feasible embodiment, and the following detailed description with reference to the drawings, so as to have a deeper understanding of the structure of the present invention.

(1): The first process

(10): Linear crystalline baseline (P electrode)

(2): The second process

(11): N semiconductor layer (N-type epi)

(12): P semiconductor layer (P-type epi)

(13): Light emitting layer

(3): The third process

(14): Conductive film (ITO)

(4): The fourth process

(15): Metal coating (N electrode)

(5): The fifth process

(6): The sixth process

(7): The sixth process

(8): Upright cylinder cylindrical reaction chamber

(80): Gas inlet

(81): Gas outlet

(82): Perforation

(9): Heater

(100): Epitaxial body

(101): grain

(200): Driver IC

(A): Wafer substrate

(B): grain

(C): The first process

(C1): substrate

(D): Second process

(D1): first layer epitaxial (n-type epi)

(D2): Second layer (P-type epi)

(E): The third process

(E1): Coating (ITP)

(E2): N electrode layer

(F): Fourth process

(F1): Photoresist layer

(G): The fifth process

(G1): shelter

(G2): UV light

(G3): Depression ditch

(H): The sixth process

(H1): Metal evaporation layer (P electrode)

(I): Seven processes

(I1): P electric shock

(J): Eighth process

(K): The ninth process

(L): Tenth process

(M): Eleventh process

(N): reaction chamber

(N1): gas inlet

(N2): gas outlet

(O): RF heater

The first figure is a three-dimensional schematic diagram of conventional conventional wafer forming.

The second figure is a flow chart of manufacturing conventional conventional light-emitting diodes.

The third diagram is a block diagram of a conventional manufacturing process of an organic metal vapor deposition chamber and a light emitting diode (die).

The fourth picture is the top view and front view of the traditional conventional organic metal vapor deposition chamber (MOCVD) Perspective schematic diagram of the implementation of manufacturing.

The fifth figure is a block diagram of the manufacturing process of the linear organic metal vapor deposition chamber and the light emitting diode (crystal line) of the present invention.

The sixth figure is a flow chart of the production of linear organometallic vapor-deposited tiny light-emitting diode of the present invention.

The seventh figure is a three-dimensional schematic diagram of the manufacturing process of the fifth figure.

The eighth figure is a schematic plan view of the linear organometallic vapor deposition reaction chamber of the present invention in top view and front perspective.

The ninth figure is a three-dimensional schematic diagram of power-on detection of the linear crystal body of the present invention.

The tenth figure is a schematic view of a three-dimensional embodiment of the linear crystal body of the present invention for the installation of finished products.

Please refer to the fifth figure, which is a block diagram of the manufacturing process of the linear organic metal vapor deposition chamber and the light emitting diode (crystal line) of the present invention, which mainly includes: 1. wafer cleaning, 2. the first time Crystal, 3. High temperature fusion, 4. Second epitaxy, 5. High temperature fusion, 6. Third epitaxy, 7. Conductive mold (ITO), 8. Metal evaporation, 9. Dry etching, 10. Length cutting, 11. Power-on test, 12. Packing and storage, etc. about 12 channels; please refer to the sixth and seventh figures again, it is the manufacturing flow chart and the three-dimensional manufacturing process of the linear tiny light emitting diode of the present invention Schematic diagram of the process (please follow the arrow to explain): the first process (1) is the linear body crystalline baseline (linear guide material-P electrode) (10) heating; the second process (2) is in the shape of an upright cylinder A multi-layer epitaxial layer coated with a linear crystalline baseline (10) in the reaction chamber (7), that is, the first layer is an N-type epi (11) and the second layer is a P-semiconductor (P -type epi) (12), and the first layer is an N-semiconductor layer (N-type epi) (11), and the second layer is a P-semiconductor layer (P-type The energy gap between epi) (12) is a light-emitting layer (13); the third process (3) is a P semiconductor layer (P-type epi) (12) and a conductive film (ITO) is coated on the second layer (14); the fourth process (4) is coated with a metal coating (N electrode) (15) on the conductive film (ITO) (14); the fifth process (5) is the epitaxial wire body (100) Etching; The sixth process (6) is the linear crystalline baseline (P electrode) (10) and the metal coating (N electrode) (15) for conduction test; the seventh process (6) is the final packaging and storage; the above The linear crystalline baseline (10) is the P electrode, and the outermost layer is the metal coating (N electrode) (15); the above epitaxial has different wavelengths due to different materials; and the epitaxial structure is different, the brightness will also be different ; Please refer to the eighth figure again, which is a schematic plan view of the top and front perspective of the linear organometallic vapor deposition reaction chamber of the present invention, wherein the reaction chamber is made of a vertical cylindrical cylindrical reaction chamber ( 8), the upper and lower ends are set as gas inlet (80) and gas outlet (81), and a heater (9) is arranged near the lower end inside the cavity to place the linear crystal crystalline baseline (10) in the vertical cylindrical column reaction The cavity (8) is directly thermally conductive for self-heating, and a gas nozzle (not shown) is installed at the upper gas inlet (80), and a plurality of arrangements are arranged around the end surface of the gas inlet (80) Perforations (82), the majority of the perforations (82) are used for penetrating linear crystal base lines (10); the upper end of the above vertical cylindrical reaction chamber (8) is penetratively fixed to a majority linear After the bulk crystallization baseline (10) (may be illustrated with the seventh diagram), the organic compound gas formed by the elements and organic roots to be combined is set in the gas inlet (70) of the cylindrical reaction chamber (7) of the vertical cylinder Under the spray effect of the gas nozzle (not shown), the linear crystal base line (10) is attached to the desired single crystal film, that is, the reaction chamber epitaxial, vapor deposition (ITO), vapor deposition (N electrode), etching Wait for the procedure, and complete the epitaxy process; After the epitaxial epitaxial wire body (100) is etched, a large number of crystal grains (101) are formed on the wire body, and each crystal grain (101) is crystallized with a linear body in the center of the baseline (linear guide material-P electrode) )(10) is the substrate, the first layer is N-type semiconductor layer (N-type epi) (11) and the second layer P-type semiconductor layer (P-type epi) (12), the first layer is N A light-emitting layer (13) is provided between the semiconductor layer (N-type epi) (11) and the second P-type semiconductor layer (P-type epi) (12), followed by a conductive film (ITO) (14) and a metal plating film (N electrode) (15), in order to complete the structure of epitaxial wire body (100) with countless crystal grains (101); finally, the epitaxial wire body (100) is powered on by the driving IC (200) to detect (see ninth) (Shown in the figure), the test of the epitaxial wire body (100) in the final procedure is completed; furthermore, please refer to the tenth figure, which is a schematic diagram of a three-dimensional embodiment of the linear crystal wire body of the present invention for the installation of finished products, in which The linear body formed by the epitaxial line body (100) after completing the epitaxial and multi-channel test inspection is arranged in sequence to form a curtain-type LED display user.

In summary, when knowing the process of the upright cylindrical cylindrical reaction chamber and the linear luminous body of the micron LED epitaxial of the present invention, it can achieve the effect of linear crystal grains with few manufacturing processes and the tiny crystal grains can be easily assembled. Its practicability is beyond doubt. Therefore, I filed an application for an invention patent right according to law, so I urge the examination committee of the Jun Bureau to expedite the examination and approval of the invention patent, which really feels virtuous; however, the above examples and figures The description of the formula is only a preferred single embodiment of the present invention, and it should not be used to limit other implementation scopes of the present invention, that is, any changes or modifications made according to the following functions and features of the patent application scope of the present invention are still It is within the scope of this invention patent, and it is hereby declared.

(10): Linear crystalline baseline (P electrode)

(8): Upright cylinder cylindrical reaction chamber

(80): Gas inlet

(81): Gas outlet

(82): Perforation

(9): Heater

Claims (4)

A process for forming a vertical cylindrical reaction chamber and a linear luminous body of a micrometer LED epitaxial, especially a process method of forming a luminescent crystal composed of tiny LEDs, assuming that a linear luminous body utilizes an upright cylindrical cylindrical reaction chamber, and Achieve the process of epitaxy, evaporation, etching, etc. of the linear luminous body in the cylindrical reaction chamber of the upright cylinder, and then the epitaxial wire body can be assembled in a very fine volume, and its yield can be improved The function is characterized by: making the base body into a linear body crystalline baseline, and using the organic compound gas formed by using the element to be combined with the organic root to spray on the linear body crystalline baseline, so that the linear body crystalline baseline produces a chemical reaction And form the required first and second layers of multi-layer film surface (N-type epi), (P-type epi), then metal evaporation, exposure/development, and photoresist coating, etching, Half-cut/power-on point side, and full-cut (cut), crystal expansion/appearance inspection, and finally packaged into the warehouse; its characteristics are: the reaction chamber is made into a vertical cylindrical cylindrical reaction chamber structure, and the upper and lower ends are designed It is the gas inlet hole and gas outlet of the organic compound, and a heater is provided near the lower end inside the vertical cylindrical cylindrical reaction chamber, so that the crystalline baseline of the linear body is placed in the vertical cylindrical cylindrical reaction chamber to directly conduct heat for self-heating, and The gas inlet at the upper end is equipped with a gas nozzle, and the surrounding end surface of the gas inlet is provided with a plurality of perforations arranged for the crystal base line of the linear body pendant; the crystal base line of the linear body In the vertical way, the vertical position of the cylindrical reaction chamber of the vertical cylinder is arranged and positioned vertically, and then the linear inlet of the linear body is coated with the first layer and the second layer of multilayer film (N- type epi), (P-type epi), and then achieve the linear body of the epitaxial line body and the luminous body has a 360-degree circumferential luminous effect, and the process technology of cutting and assembling can be effectively achieved by obtaining a very fine linear grain size By. As described in item 1 of the patent application, the process of the vertical cylindrical cylindrical reaction chamber and the linear luminous body of the micron LED epitaxial, wherein the surface of the multilayer film on the linear baseline surface of the linear body can be more than two layers. The process of the vertical cylinder cylindrical reaction chamber and the linear luminous body of the micrometer LED epitaxial as described in the first item of the patent scope, wherein the surface of the epitaxial multilayer film on the linear crystal crystalline baseline surface is half cut on the epitaxial line body A large number of crystal grains can be formed. The process of the vertical cylinder cylindrical reaction chamber and linear luminous body of the micron LED epitaxial as described in item 1 of the patent scope, wherein the linear body crystal baseline is between the first layer and the second layer of the multilayer film surface (N A light-emitting layer is provided between -type epi) and (P-type epi).

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