TWI662630B - A separation apparatus and a method for separating a cap layer from a chip package by means of the separation apparatus - Google Patents

Abstract

The invention provides a peeling device for peeling a stacked structure composed of a substrate and a cover layer. The peeling device includes a vacuum nozzle head, suction cups with opposite upper and lower surfaces, a vacuum hole penetrating the upper and lower surfaces of the suction cup, and A hollow vacuum tube coupled to a vacuum hole and a vacuum pump, a platform, located below the vacuum nozzle head and substantially aligned with the suction cup, so that the stacking structure can be fixed on the platform, a control mechanism, coupled to the vacuum nozzle head, It can be lifted or lowered relative to the platform, and a first cutter has a first body and a first blade portion. After the cover layer is adsorbed by the vacuum nozzle head, the first blade portion is cut into the interface layer between the substrate and the cover layer through the first side wall of the stacked structure, and is generated by the suction force of the vacuum nozzle head and the vacuum nozzle head being lifted upwards. The lifting force causes the substrate and the cover layer to be peeled off.

Description

Peeling device and method for peeling surface cover layer of chip package by using same

The invention relates to a peeling device, and in particular to a peeling device for peeling a surface cover layer of a chip package, and a method for peeling a surface of a chip package by using the peeling device.

The sensing elements of a chip package with a sensing function are susceptible to contamination or damage during the traditional manufacturing process, resulting in a decrease in the efficiency of the sensing element, thereby reducing the reliability or quality of the chip package. In addition, in order to comply with the trend of miniaturization of electronic products, how to reduce the thickness of the packaging substrate used to carry semiconductor wafers in the packaging structure of electronic products is also an important issue in the development of electronic products. In the manufacturing process of the package substrate, the circuit is fabricated on a thin core layer. If the package substrate meets the requirements of miniaturization, when a package substrate with an excessively thin thickness is selected, not only the production workability of the package substrate is poor, but also the package substrate is liable to be deformed due to environmental factors in the packaging process due to the excessively thin thickness. Warping or damage Into defective products.

In order to overcome the aforementioned problems, the industry has developed SLP (Small Leadless Package) technology. This technology is mainly used to pre-laminate a carrier material on the other side of the package substrate when it is manufactured. The carrier material provides reinforcement to the body of the sealed substrate. The function of supporting and overcoming the problem of overly thin package substrate and easy deformation and damage in the packaging process. After the packaging substrate completes the molding process, the carrier material is removed to meet the needs of miniaturized products. However, in the aforementioned packaging substrate, the carrier material is laminated on the body side of the packaging substrate. Due to the strong bonding force between the carrier material and the body, when the carrier material is subsequently peeled off, the packaging is likely to be caused by improper handling of the peeling means. The wiring layer on the substrate body is damaged.

An embodiment of the present invention provides a peeling device for peeling a stacked structure including a substrate and a cap layer. The peeling device includes a vacuum nozzle head, which has a top and a bottom. The suction cup on the lower surface, a vacuum hole passing through the upper and lower surfaces of the suction cup, a hollow vacuum tube coupled to the vacuum hole and a vacuum pump, and a stage are located under the vacuum nozzle head and are substantially aligned with the suction cup So that the stacking structure can be fixed on the platform, a control mechanism, coupled to the vacuum nozzle head, so that the vacuum nozzle head can be raised or lowered relative to the platform, and a first cutter having a first body and a Connected to the first knife of the first body. Wherein, the cover layer is pressed by the lower surface and is hollow due to the true hole pump. After the vacuum tube is evacuated and sucked, the first blade portion passes through the first side wall of the stacked structure, cuts an interface layer between the substrate and the cover layer, and is lifted upward by the suction force of the vacuum nozzle head and the vacuum nozzle head. The generated lifting force causes the substrate and the cover layer to be peeled off.

Another embodiment of the present invention provides another peeling device for peeling a stacked structure composed of a substrate and a cap layer, including a vacuum nozzle head having opposite upper and lower surfaces. Suction cup, an edge frame surrounding the edge of the lower surface, a vacuum hole penetrating the upper and lower surfaces of the suction cup, a hollow vacuum tube coupled to the vacuum hole and a vacuum pump, a stage, located in a vacuum The nozzle head is below, and is substantially aligned with the suction cup, so that the stacking structure can be fixed on the platform, and a control mechanism is coupled to the empty nozzle head, so that the vacuum nozzle head can be driven to rotate and be relative to the platform. Raise or lower. Wherein, after the cover layer is pressed against the lower surface of the suction cup and is adsorbed because the vacuum pump draws the hollow vacuum tube, the mechanism rotates the vacuum nozzle head for a period of time to generate a torque and simultaneously drives the empty nozzle head. Lifting upward causes the cover layer to be peeled off under a torsional force and an upward lifting force.

Another embodiment of the present invention provides a method for peeling a surface cover layer of a chip package. The steps include providing a stripping device for a cap layer of a chip package, including a vacuum nozzle head. Suction cups on the upper and lower surfaces, a vacuum hole penetrating the upper and lower surfaces of the suction cup, and a hollow vacuum coupled to the vacuum holes and a vacuum pump A tube, a stage, located below the vacuum nozzle head and substantially aligned with the suction cup, a control mechanism coupled to the vacuum nozzle head, so that the vacuum nozzle head can be raised or lowered relative to the platform, And a first cutter, comprising a first body and a first knife connected to the first body; providing a chip package and fixing it on a platform, the chip package including a base having an opposite first surface And a second surface, wherein a sensing element is formed adjacent to the first surface, and a redistribution layer is formed adjacent to the second surface, and the redistribution layer is electrically connected to the sensing element and a capping layer, including the opposite first Three surfaces and a fourth surface. The third surface includes a bonding area with an area equal to the first surface area and a peripheral area surrounding the bonding area. The capping layer covers the first surface of the substrate through the bonding area. And an adhesive layer located between the substrate and the cover layer and covering the sensing element, wherein the chip package further includes first, second, third, and third layers formed by the edges of the cover layer, the adhesive layer and the base layer. Fourth side wall And the first and second side walls are opposed to each other, and the third and fourth side walls are opposed to each other; the lower surface of the suction cup is pressed against the fourth surface of the cover layer; the vacuum source is used to extract a vacuum from the hollow vacuum tube, so that the cover layer is Sucked by the suction cup; and moving the first cutter toward the first side wall of the chip package in a manner relative to the chip package, so that the first blade portion enters the peripheral region adjacent to the first side wall, and is located along the peripheral region. The third surface is cut into the adhesive layer, and at the same time, the control mechanism is operated to drive the vacuum nozzle head upward, so that the cover layer and the adhesive layer are peeled off the chip package.

Another embodiment of the present invention provides another method for peeling a surface cover layer of a chip package. The steps include providing a stripping device for a cap layer of a chip package, including a vacuum nozzle head. A suction cup opposite to the upper and lower surfaces, a vacuum hole penetrating the upper and lower surfaces of the suction cup, a hollow vacuum tube coupled to the vacuum hole and a vacuum pump, and a stage are located under the vacuum nozzle head and communicate with the The suction cup is substantially aligned, a control mechanism is coupled to the vacuum nozzle head, so that the vacuum nozzle head can be raised or lowered relative to the platform, and a first cutter, including a first body and a connection to the first body A first knife edge (knife); a chip package is provided and fixed on the platform, the chip package includes a substrate with opposite first and second surfaces, and a sensing element disposed adjacent to the first surface A cover layer having a third surface and a fourth surface opposite to each other, the third surface covering the first surface of the substrate, and an adhesive layer located between the substrate and the cover layer and covering the sensing element, wherein , Chip The body further includes first, second, third, and fourth side walls formed by the cover layer, the adhesive layer, and the edge of the base, and the first and second side walls are opposed to each other, and the third and fourth side walls are opposed to each other; The lower surface of the chuck is pressed against the fourth surface of the cover layer; the hollow vacuum tube is evacuated by a vacuum pump so that the chip package is attracted by the chuck; and the first cutter is moved toward the chip package in a manner relative to the chip package. The first side wall of the body is approached, so that the first blade edge portion is cut into the adhesive layer along the third surface of the cover layer, and at the same time, the control mechanism is operated to drive the vacuum nozzle head to lift up, so that the cover layer is peeled off the chip package.

Yet another embodiment of the present invention provides another method for peeling a surface cover layer of a chip package, and a method for peeling a surface cover layer of a chip package. The steps include providing a peeling device for a cap layer of a chip package, including: A vacuum nozzle head has suction cups facing the upper and lower surfaces, an edge frame surrounding the edge of the lower surface, a vacuum hole penetrating the upper and lower surfaces of the suction cup, and a vacuum hole coupled to the vacuum nozzle head. And a hollow vacuum tube of a vacuum pump, a stage, which is located below the vacuum nozzle head, is substantially aligned with the suction cup, and a control mechanism is coupled to the vacuum nozzle head, so that the vacuum nozzle head can be controlled Rotate and be lifted or lowered relative to the platform; provide a chip package and fix it on the platform, the chip package includes a substrate with opposite first and second surfaces, and the second surface faces the platform A sensing element is disposed adjacent to the first surface, a cover layer has a third surface and a fourth surface opposite to each other, and a side wall surrounding the third and fourth surfaces, and the third surface covers On the first surface of the substrate, and an adhesive layer, located between the substrate and the cover layer, and covering the sensing element; the control mechanism is operated to lower the vacuum nozzle head toward the platform and press the cover surface against the cover layer The fourth surface of the suction cup against the side wall of the cover layer; using a vacuum pump to evacuate the hollow vacuum tube to reach a predetermined vacuum Pi, so that the cover layer is adsorbed by the nozzle head, Pi -90Kpa; and the operation control mechanism, the vacuum nozzle head is rotated at a rotation speed of 300-750 degrees per second for one t time to generate a torque TF (torque force), and the vacuum nozzle head is lifted upward to generate an upward lift Lift force LF (lift force) makes the cover layer be peeled off the chip package under the action of torsion and upward lifting force, where 0 seconds <tl <5 seconds.

100‧‧‧ foundation layer

100a, 1122‧‧‧First surface

100b, 1121‧‧‧ second surface

112‧‧‧ substrate

120‧‧‧Chip Area

140‧‧‧Conductive pad

160‧‧‧sensing element

180‧‧‧ Adhesive layer

200‧‧‧ cap

200a‧‧‧Combination area

200b‧‧‧surrounding area

201, 301, 401, 501, 601‧‧‧vacuum nozzle head

202, 302, 402, 502, 602‧‧‧

204, 304, 404, 504, 604‧‧‧ upper surface

206, 306, 406, 506, 606‧‧‧ lower surface

208, 308, 408, 508, 608‧‧‧vacuum holes

210, 310, 410, 510, 610‧‧‧ hollow vacuum tube

212, 312, 412, 512, 612‧‧‧ hollow pipes

214, 314, 414, 514, 614‧‧‧ Control agencies

216, 316, 416, 516, 616‧‧‧ platforms

220, 330, 420‧‧‧The first cutter

330 ’, 420’‧‧‧Second cutter

222, 332, 422‧‧‧ First Body

332 ’, 422’‧‧‧Second body

224, 334, 424‧‧‧‧The first blade

334 ’, 424’‧‧‧Second blade section

315‧‧‧first opening

320‧‧‧ Insulation

340‧‧‧ redistribution layer

360‧‧‧Passive protective layer

380‧‧‧Second opening

400‧‧‧ conductive structure

424‧‧‧protective layer

426, 603‧‧‧ border

428‧‧‧The first gap

430‧‧‧Second Gap

620‧‧‧seal ring

L’ ‧‧‧ separated channels

1000‧‧‧Chip Package

2000, 3000, 4000, 5000, 6000 ‧‧‧ stripping devices

FIG. 1A shows a perspective view of a chip package with a cap layer.

1B to 1D show schematic sectional views according to the section line B-B 'of FIG. 1A.

Figures 1A 'to 1F' show a method for manufacturing a chip package having a schematic cross-sectional view as shown in Figure 1D.

Figures 2A to 2E are schematic cross-sectional views showing a peeling device according to the first embodiment of the present invention, and peeling a surface cover layer of a chip package by using the peeling device.

FIGS. 3A to 3E are schematic cross-sectional views showing a peeling device according to a second embodiment of the present invention, and peeling a surface cover layer of a chip package by using the peeling device.

FIGS. 4A to 4E are schematic cross-sectional views showing a peeling device according to a third embodiment of the present invention, and peeling a surface cover layer of a chip package by using the peeling device.

5A to 5D are schematic cross-sectional views showing a peeling device according to a fourth embodiment of the present invention, and a peeling device for peeling off a surface cover layer of a chip package by using the peeling device;

FIGS. 6A to 6D are schematic cross-sectional views of a peeling device according to a fifth embodiment of the present invention, and peeling a surface cover layer of a chip package by using the peeling device.

The following will explain in detail the manufacturing and using methods of the embodiments of the present invention. It should be noted, however, that the present invention provides many applicable inventions Concept, it can be implemented in many specific types. The specific embodiments discussed by way of example are merely specific ways of making and using the invention, and are not intended to limit the scope of the invention. In addition, duplicate numbers or designations may be used in different embodiments. These repetitions are merely for the purpose of simply and clearly describing the invention, and do not represent any relevance between the different embodiments and / or structures discussed. This will be explained in detail below.

The chip package according to the embodiment of the present invention can be used to package a micro-electro-mechanical system chip. However, its application is not limited to this. For example, in the embodiment of the chip package of the present invention, it can be applied to various types including active or passive elements, digital circuits or analog circuits. The electronic components of integrated circuits are, for example, related to opto electronic devices, micro electro mechanical systems (MEMS), micro fluidic systems, or the use of heat, light, and A physical sensor that measures changes in physical quantities such as pressure. In particular, a wafer scale package (WSP) process can be used to select image sensing elements, light-emitting diodes (LEDs), solar cells, RF circuits, Accelerators, gyroscopes, micro actuators, surface acoustic wave devices, process sensors, or ink printer heads seal Installed.

The above-mentioned wafer-level packaging process mainly refers to cutting into individual packages after the packaging steps are completed at the wafer stage. However, in a specific embodiment, for example, the separated semiconductor wafers are redistributed on a carrier wafer. On the circle, a packaging process is performed, which can also be referred to as a wafer-level packaging process. In addition, the above-mentioned wafer-level packaging process is also suitable for arranging a plurality of wafers with integrated circuits by a stack method to form a multi-layer integrated circuit devices chip package.

Hereinafter, the conventional chip package structure will be described with reference to FIGS. 1A to 1D and FIGS. 1A 'to 1F'.

Please refer to FIG. 1A, which shows a perspective view of a chip package 1000. The chip package 1000 has a substrate 112, a capping layer 200, and an adhesive layer 180 sandwiched between the substrate 112 and the capping layer 200. The sidewalls of the cover layer 200, the adhesive layer 180, and the substrate 112 constitute a first sidewall 250a, a second sidewall 250b, a third sidewall 250c, and a fourth sidewall 250d, wherein the first sidewall 250a, the second sidewall 250b are opposed to each other, and the third The side wall 250c and the fourth side wall 250d are opposite to each other, and the first side wall 250a and the second side wall 250b are simultaneously connected to the third side wall 250c and the fourth side wall 250d. The cover layer 200 may be glass, aluminum nitride, scotch tape, sapphire, or other suitable protective materials. The adhesive layer 180 may be a light-sensitive resin (for example, epoxy resin or UV glue), an inorganic material (for example, silicon oxide, silicon nitride, silicon oxynitride, metal oxide, or a combination thereof), an organic polymer material ( (E.g. polyimide resin, phenylcyclobutene, parylene, naphthalene polymers, fluorocarbons, acrylates) or Other suitable adhesive materials.

Please refer to FIG. 1B, which shows a cross-sectional view of the chip package 1000 according to the direction of the line B-B 'shown in FIG. 1A. As shown in FIG. 1B, the substrate 112 includes a first surface 1122 and a second surface 1121 opposite thereto, and the cover layer 200 includes a third surface 1221 and a fourth surface 1222 opposite thereto, and the second surface 1121 borrows The adhesive layer 180 is in contact with the third surface 1221. In one embodiment, the chip package 1000 further includes a printed circuit board (not shown) bonded to the second surface 1121 of the substrate 112. The detailed structure of the substrate 112 will be described in detail in FIG. 1C and FIG. 1D.

As shown in FIG. 1C and FIG. 1D, the substrate 112 includes a base layer 100 having an upper surface 100a and a lower surface 100b, and a sensing element 160 and a plurality of adjacent sensing elements 160 adjacent to the upper surface 100a. Conductive pad 140. The base layer 100 may be a silicon substrate or other semiconductor substrates, or a silicon wafer to facilitate the wafer-level packaging process. The sensing element 160 may include an image sensing element, and the sensing element 160 is used to sense a biological feature, such as a fingerprint recognition element, a sensing environment feature element, such as a temperature sensing element, a humidity sensing element, a pressure sensing element, or other Suitable sensing element. In addition, the sensing element 160 can be electrically connected to the conductive pad 140 through an interconnect structure (not shown).

As shown in FIG. 1C and FIG. 1D, the lower surface 100b of the base layer 100 further includes a plurality of first openings 315 exposing the conductive pad 140, and each of the first openings 315 has a weight connected to the conductive pad 140 The wiring layer 340 is electrically isolated from the redistribution layer 340 and the base layer 100 by an insulating layer 320. The wiring 340 of the redistribution layer may include copper, aluminum, gold, platinum, nickel, tin, The foregoing combination, a conductive polymer material, a conductive ceramic material (for example, indium tin oxide or indium zinc oxide), or other suitable conductive materials. In addition, the redistribution layer 340 is further covered with a passivation protection layer 360, and a plurality of second openings 380 are formed in the passivation protection layer 360 to expose a part of the redistribution layer 340 on the lower surface 100b of the base layer 100, A conductive structure (for example, a solder ball, a bump, or a conductive pillar) 400 is formed in each of the second openings 380 to directly contact the exposed redistribution layer 340. The passivation protection layer 360 may include an epoxy resin, a solder mask, an inorganic material (for example, silicon oxide, silicon nitride, silicon oxynitride, metal oxide, or a combination thereof), an organic polymer material (for example, polymer Fluorene imine resin, phenylcyclobutene, parylene, naphthalene polymer, fluorocarbon, acrylate) or other suitable insulating materials. The conductive structure 400 may include tin, lead, copper, gold, nickel, a combination of the foregoing, or other suitable conductive materials.

Compared with the structure of the chip package shown in FIG. 1C, a part of the base layer 100 and the adhesive layer 180 of the chip package shown in FIG. 1D are removed to expose a part of the third surface 1221 of the cover layer 200, so that The third surface 1221 forms a bonding region 200 a having an area equal to that of the upper surface 100 a of the base layer 100 and a peripheral region 200 b surrounding the bonding region 200 a. The manufacturing process of the chip package shown in FIG. 1D will be described in detail in FIGS. 1A ′ to 1F ′.

As shown in FIG. 1A ', a base layer 100 is provided, which has a first surface 100a and a second surface 100b opposite to the first surface 100a, and includes a plurality of wafer regions 120. A plurality of conductive pads 140 are provided in each wafer region 120 of the base layer 100, which may be adjacent to the first surface 100a. In order to simplify the diagram, only shown here Two adjacent wafer regions 120 and two conductive pads 140 respectively located in a single wafer region 120 of the base layer 100 are obtained. In one embodiment, the conductive pad 140 may be a single-layer conductive layer or a multi-layer conductive layer structure. Here, only a single conductive layer is used as an example. In this embodiment, each chip region 120 of the base layer 100 has a sensing element 160 which can be adjacent to the first surface 100 a of the base layer 100.

Next, referring to FIG. 1B ′, a cover layer 200 having a third surface 1221 and a fourth surface 1222 is attached to the first surface 100 a of the base layer 100 with the third surface 1221 through an adhesive layer 180. . With the cover layer 200 as a carrier substrate, a thinning process (for example, an etching process, a milling process, a mechanical grinding process, or a chemical mechanical polishing process) is performed on the second surface 100b of the base layer 100. ) To reduce the thickness of the base layer 100. Then, it can be formed in each wafer region 120 of the base layer 100 through a lithography process and an etching process (for example, a dry etching process, a wet etching process, a plasma etching process, a reactive ion etching process, or other suitable processes). Plural first opening 310. The first openings 315 extend from the second surface 100b of the base layer 100 toward the first surface 100a, and respectively expose corresponding conductive pads 140 adjacent to the first surface 100a. Then, an insulating layer 320 may be conformably formed on the second surface 100b of the base layer 100 through a deposition process (for example, a coating process, a physical vapor deposition process, a chemical vapor deposition process, or other suitable processes), which is Extending into the first opening 315 of the base layer 100.

Please refer to Figure 1C ’. Through the lithography process and the etching process (for example, dry etching process, wet etching process, plasma etching process, reactivity An ion etching process or other suitable processes), removing the insulating layer 320 on the bottom of the first opening 315 to expose the surface of the conductive pad 140. Next, the insulating layer 320 may be deposited through a deposition process (for example, a coating process, a physical vapor deposition process, a chemical vapor deposition process, a plating process, an electroless plating process, or other suitable processes), a lithography process, and an etching process. A patterned redistribution layer 340 is formed.

The redistribution layer 340 conformably extends to the bottom of the first opening 315 of the base layer 100 and directly contacts the exposed conductive pad 140 to be electrically connected to the conductive pad 140 and is electrically connected to the base layer 100 through the insulating layer 320 isolation. Therefore, the lead 340 of the redistribution layer in the first opening 315 is also referred to as a through silicon via (TSV). Then, a passivation protection layer 360 is formed on the redistribution layer 340 through a deposition process, and is filled into the first opening 315 of the base layer 100 to cover the redistribution layer 340. Then, through the lithography process and the etching process, a plurality of second openings 380 are formed in the passivation protection layer 360 of each wafer region 120 to expose the redistribution layer wires 340 on the second surface 100 b of the base layer 100. a part of.

Next, referring to FIG. 1D ′, a conductive structure (for example, a solder ball, a bump, or a conductive pillar) 400 is formed in the second opening 380 of the passivation protective layer 360 so as to directly contact the exposed redistribution layer 340 and The conductive lines 340 of the patterned redistribution layer are electrically connected. For example, a solder can be formed in the second opening 380 of the passivation protective layer 360 through a plating process, a screen printing process, or other suitable processes, and a reflow process can be performed to form the conductive structure 400. . In addition, although not shown in the drawings, the conductive structure 400 may be on the second surface of the base layer 100 when viewed from above. 100b is arranged in a matrix. In this embodiment, the conductive structure 400 may include tin, lead, copper, gold, nickel, a combination of the foregoing, or other suitable conductive materials. Next, a protective layer 420 (for example, an adhesive tape) is formed on the passivation protective layer 360 and the conductive structure 400 to provide a flat surface and protect the conductive structure 400.

Then, referring to FIG. 1E ′, another carrier board 270 is provided. The structure shown in FIG. 1D ′ is reversed, so that the cover plate 200 is attached to the carrier board 270 with its fourth surface 1222, and then the protective layer 420 is removed. . Next, a portion of the passivation protective layer 360, the redistribution layer 340, the insulating layer 320, the base layer 100, and the adhesive layer 180 at the adjacent wafer region 120 is removed by etching to form a separation channel exposing a portion of the third surface 1221 of the capping layer 200. L '.

Finally, referring to FIG. 1F ', a cutting process is performed along the separation channel L' from the base layer 100 toward the cover layer 200 to form a plurality of chip packages 1000 with schematic cross-sectional views as shown in FIG. 1D.

First embodiment:

Figures 2A to 2E show schematic cross-sectional views of the cover layer 200 of the chip package 1000 shown in Figure 1C or Figure 1D according to the first embodiment of the present invention. In order to facilitate understanding of the technical characteristics of this embodiment, the following This will be explained with reference to the schematic sectional view shown in FIG. 1B.

Please refer to FIG. 2A, which shows a peeling device 2000 according to a first embodiment of the present invention. The peeling device 2000 includes a vacuum nozzle head 201, a platform 216 below the vacuum nozzle head 201, a control mechanism 214 coupled to the vacuum nozzle head 201, and a first mechanism coupled to the control mechanism 214. The cutter 220 and a platform 216 on which the chip package 1000 is placed. Among them, the vacuum nozzle head 201 includes a surface having opposite upper and lower surfaces 204 and 206. A vacuum chuck 202, a vacuum hole 208 penetrating the upper and lower surfaces 204, 206 of the vacuum chuck 202, and a hollow vacuum tube 210 connected to a vacuum pump, and the hollow vacuum tube 210 has a hollow pipe 212 coupled to the vacuum hole 208, and The vacuum nozzle head 201 can be lifted or lowered relative to the platform by the control mechanism 214 coupled to the vacuum nozzle head 201. The first cutter 220 has a first body 222 and a first cutting edge portion 224 extending from an end of the first body 222.

Referring to FIG. 2B, the chip package 1000 shown in FIG. 1B is first placed on the platform 216 with the second surface 1121 thereof. Next, referring to FIG. 2C, the control mechanism 214 of the peeling device 200 is operated so that the vacuum nozzle head 201 is lowered relative to the platform 216, and the lower surface 206 of the vacuum chuck 202 is pressed against the fourth surface 1222 of the cover layer 200. Then, the vacuum pump is started to evacuate the hollow vacuum tube 210, so that the chip package 1000 is sucked by the vacuum chuck 202.

Then, referring to FIG. 2D, the control mechanism 214 is operated so that the first tool 220 coupled to the first tool 220 moves toward the first side wall 250a of the chip package 1000 in a manner to move relative to the chip package 1000, thereby making it first. The blade portion 224 cuts into the adhesive layer 180 along the edge of the third surface 1221 of the cover layer 200 to reduce the adhesion between the cover layer 200 and the substrate 112.

Next, referring to FIG. 2E, the control mechanism 214 is operated to drive the vacuum nozzle head 201 to be lifted upward, so that the cover layer 200 and the adhesive layer 180 are peeled off the substrate 112.

Wherein, when the chip package 1000 has a peripheral region 200b that exposes the third surface 1221 of the cap layer as shown in FIG. 1D, the first cutting edge portion 224 of the first cutter 220 will be more accurately along the peripheral region. The edge of the third surface 1221 of 200b is cut into the adhesive layer 180 and is driven by the control mechanism 214 When the vacuum nozzle head 201 is lifted upward, the peripheral area 200b is caught by the first blade portion 224, and as the vacuum nozzle head 201 is lifted upward, the cover layer 200 and the adhesive layer 180 are peeled off the substrate 112.

In addition, when the adhesive layer 180 of this embodiment is selected from a light-sensitive resin (such as UV glue), the chip package 1000 may be pre-treated with light and / or heat before the cover layer 200 is stripped, so that the cover layer 200 And the adhesive layer 180 is more easily peeled off the substrate 112 by the peeling device 2000. Among them, the light pretreatment is irradiated with ultraviolet light with a wavelength of 254nm, and the pretreatment is performed under an environment with a temperature between 25 ° C and 60 ° C.

Second embodiment:

FIGS. 3A to 3E are schematic cross-sectional views of the cover layer 200 of the chip package 1000 shown in FIG. 1C or FIG. 1D according to the second embodiment of the present invention. In order to facilitate understanding of the technical features of this embodiment, Explanation will be given with a schematic sectional view shown in FIG. 1B.

Please refer to FIG. 3A, which shows a peeling device 3000 according to a second embodiment of the present invention. The peeling device 3000 includes a vacuum nozzle head 301, a platform 316 below the vacuum nozzle head 301, a control mechanism 314 coupled to the vacuum nozzle head 301, and a first mechanism coupled to the control mechanism 314. The cutter 330, the second cutter 330 ′, and a platform 316 on which the chip package 1000 is placed. The vacuum nozzle head 301 includes a vacuum chuck 302 having opposite upper and lower surfaces 304 and 306, a vacuum hole 308 penetrating the upper and lower surfaces 304 and 306 of the vacuum chuck 302, and a hollow vacuum tube 311 connected to a vacuum pump. The hollow vacuum tube 311 has a hollow pipe 312 coupled to the vacuum hole 308, and the vacuum nozzle head 301 can be driven by the control mechanism 314 to which the vacuum nozzle head 301 is coupled. Down, relative to the platform being lifted or lowered. The first cutter 330 has a first body 322 and a first blade portion 324 extending from the end of the first body, and is coupled to the control mechanism 314 through the first body. The second cutter 330 'has a second body 322 'and a second blade portion 324' extending from the end of the second body 322 ', and coupled to the control mechanism 314 through the second body 322'.

Referring to FIG. 3B, the chip package 1000 shown in FIG. 1B is first placed on the platform 316 with its second surface 1121. Next, referring to FIG. 3C, the control mechanism 314 of the peeling device 3000 is operated so that the vacuum nozzle head 301 is lowered relative to the platform 316, and the lower surface 306 of the vacuum chuck 302 is pressed against the fourth surface 1222 of the cover layer 200. Then, the vacuum pump is started to evacuate the hollow vacuum tube 310, so that the chip package 1000 is sucked by the vacuum chuck 302.

Then, referring to FIG. 3D, the control mechanism 314 is operated so that the first tool 330 and the second tool 330 ′ coupled to the first tool 330 and the second tool 330 'are moved relative to the chip package 1000 toward the first side wall of the chip package 1000, respectively. 250a and the second side wall 250b are approached, so that the first blade portion 324 and the second blade portion 324 'are respectively cut into the adhesive layer 180 to reduce the adhesion between the cover layer 200 and the substrate 112.

Finally, referring to FIG. 3E, the control mechanism 314 is operated to drive the vacuum nozzle head 301 to be lifted upward, so that the cover layer 200 and the adhesive layer 180 are peeled off the substrate 112.

Wherein, when the chip package 1000 has a peripheral region 200b that exposes the third surface 1221 of the cap layer as shown in FIG. 1D, the first blade portion 324 of the first tool 330 and the second blade 330 ' The second blade portion 324 'cuts more accurately along the edge of the third surface 1221 of the peripheral region 200b. Into the adhesive layer 180, and when the vacuum nozzle head 301 is lifted upward by the control mechanism 314, the peripheral area 200b is hooked by the first and second blade portions 224, 224 ', and is moved along with the vacuum nozzle head 201. Lifting upward, the cover layer 200 and the adhesive layer 180 are peeled off the substrate 112.

In addition, when the adhesive layer 180 of this embodiment is selected from a light-sensitive resin (such as UV glue), the chip package 1000 may be pre-treated with light and / or heat before the cover layer 200 is stripped, so that the cover layer 200 And the adhesive layer 180 is more easily peeled off the substrate 112 by the peeling device 3000. Among them, the light pretreatment is irradiated with ultraviolet light with a wavelength of 254nm, and the pretreatment is performed under an environment with a temperature between 25 ° C and 60 ° C.

Third embodiment:

FIGS. 4A to 4E are schematic cross-sectional views of the cover layer 200 of the chip package 1000 shown in FIG. 1C or FIG. 1D according to a third embodiment of the present invention. To facilitate the understanding of the technical features of this embodiment, the following will be described. Explanation will be given with a schematic sectional view shown in FIG. 1B.

Please refer to FIG. 4A, which shows a peeling device 400 according to a third embodiment of the present invention. The peeling device 4000 includes a vacuum nozzle head 401, a platform 416 below the vacuum nozzle head 401, a control mechanism 414 coupled to the vacuum nozzle head 401, and a first mechanism coupled to the control mechanism 414. The cutter 420, the second cutter 420 ′, and a platform 416 on which the chip package 1000 is placed. The vacuum nozzle head 401 includes a vacuum chuck 402 having opposite upper and lower surfaces 404 and 406, a vacuum hole 408 passing through the upper and lower surfaces 404 and 406 of the vacuum chuck 402, and a hollow vacuum tube 410 connected to a vacuum pump. And the edge of the lower surface 406 of the vacuum suction cup 402 is surrounded by a border. 426, and the frame 426 has a first slit 428 and a second slit 430. In addition, the hollow vacuum tube 410 has a hollow pipe 412 coupled to the vacuum hole 408, and the vacuum nozzle head 401 can be lifted or lowered relative to the platform by the control mechanism 414 coupled thereto. The first cutter 420 has a first body 422 and a first cutting edge portion 424 extending from an end of the first body. The first cutter 420 is coupled to the control mechanism 414. The second cutter 420 'has a second body. 422 'and a second blade portion 424' extending from the end of the second body 422 ', and coupled to the control mechanism 414 through the second body 422'.

Referring to FIG. 4B, the chip package 1000 shown in FIG. 1 is first placed on the platform 416 with its second surface 1121. Next, referring to FIG. 4C, the control mechanism 414 of the peeling device 400 is operated, so that the vacuum nozzle head 401 is lowered relative to the platform 416, and the lower surface 406 of the vacuum chuck 402 is pressed against the fourth surface 1222 of the cover layer 200. The frame 426 abuts the surface of the first sidewall 250 a, the second sidewall 250 b, the third sidewall 250 c, the fourth sidewall 250 d, and the platform 416 of the chip package 1000. The first slit 428 and the second slit 430 face the first sidewall 250a and the second sidewall 250b, respectively. Then, the vacuum pump is started to evacuate the hollow vacuum tube 410, so that the chip package 1000 is sucked by the vacuum chuck 402.

Then, referring to FIG. 4D, the control mechanism 414 is operated so that the first tool 420 and the second tool 420 ′ coupled to the first tool 420 and the second tool 420 ′ move toward the first side wall of the chip package 1000 respectively. 250a and the second side wall 250b are close, so that the first blade portion 424 and the second blade portion 424 'pass through the first slit 428 and the second slit 430, respectively, and then cut into the adhesive layer 414 along the third surface 1221 of the cover layer 200, To reduce the cover layer 200 and the substrate Adhesion between 112.

Finally, referring to FIG. 4E, the control mechanism 414 is operated to drive the vacuum nozzle head 401 to be lifted upward, so that the cover layer 200 and the adhesive layer 180 are peeled off the second surface 1121 of the substrate 112.

Wherein, when the chip package 1000 has a peripheral region 200b that exposes the third surface 1221 of the cap layer as shown in FIG. 1D, the first blade portion 424 of the first cutter 420 and the second blade 420 ' The second blade portion 424 'cuts the adhesive layer 180 more accurately along the edge of the third surface 1221 of the peripheral region 200b, and when the control mechanism 414 drives the vacuum nozzle head 401 to rise upward, the first and second blade edges The portions 424 and 424 'catch the peripheral area 200b, and as the vacuum nozzle head 201 is lifted upward, the acceleration cover layer 200 and the adhesive layer 180 are peeled off the substrate 112.

In addition, when the adhesive layer 180 of this embodiment is selected from a light-sensitive resin (such as UV glue), the chip package 1000 may be pre-treated with light and / or heat before the cover layer 200 is stripped, so that the cover layer 200 And the adhesive layer 180 can be more easily peeled off the substrate 112 by the peeling device 4000. Among them, the light pretreatment is irradiated with ultraviolet light with a wavelength of 254nm, and the pretreatment is performed under an environment with a temperature between 25 ° C and 60 ° C.

Fourth embodiment:

FIGS. 5A to 5D are schematic cross-sectional flow diagrams of peeling the cover layer 200 of the chip package 1000 shown in FIGS. 1A to 1C according to a fourth embodiment of the present invention. In order to facilitate the understanding of the technical features of this embodiment, the following will be described. This is illustrated and explained with the cross-sectional schematic diagram shown in FIG. 1B.

Please refer to FIG. 5A, which shows a fourth embodiment of the present invention. Example peeling device 5000. The peeling device 5000 includes a vacuum nozzle head 501, a platform 516 below the vacuum nozzle head 501, and a control mechanism 514 coupled to the vacuum nozzle head 501. The vacuum nozzle head 501 includes a vacuum chuck 502 having opposite upper and lower surfaces 504 and 506, a vacuum hole 508 penetrating the upper and lower surfaces 504 and 506 of the vacuum chuck 502, and a hollow vacuum tube 510 connected to a vacuum pump. A border 509 surrounds the edge of the lower surface 506 of the vacuum chuck 502. In addition, the 510 hollow vacuum tube has a hollow pipe 512 coupled to the vacuum hole 508, and the vacuum nozzle head 501 can be controlled to rotate and be lifted relative to the platform or driven by the control mechanism 514 to which it is coupled. decline.

Referring to FIG. 5B, the chip package 1000 shown in FIG. 1B is first placed on the platform 516 with the second surface 1121 thereof. Next, referring to FIG. 5C, the control mechanism 514 of the peeling device 5000 is operated, so that the vacuum nozzle head 501 is lowered relative to the platform 516, and the lower surface 506 of the vacuum chuck 502 is pressed against the fourth surface 1222 of the cover layer 200. The frame 509 abuts against the first, second, third, and fourth side walls of the chip package 1000 and the surface of the platform 516. Then, the vacuum pump is started to evacuate the hollow vacuum tube 510 to reach a predetermined vacuum degree Pi, and Pi -90Kpa, so that the chip package 1000 is sucked by the vacuum chuck 502.

Then, referring to FIG. 5D, the operation control mechanism 514 causes the vacuum nozzle head 501 to rotate at a rotation speed of 300 to 750 degrees / second for less than five seconds, so that the vacuum nozzle head 501 generates a torque with respect to the chip package 1000. (torque force). Thereafter, the control mechanism 514 is operated to drive the vacuum nozzle head 501 to be lifted upwards to generate an upward lift force, so that the cover layer 200 The first surface 1122 of the substrate 112 is peeled from the adhesive layer 180 under the action of torsion and upward lifting force.

In addition, when the adhesive layer 180 of this embodiment is selected from a light-sensitive resin (such as UV glue), the chip package 1000 may be pre-treated with light and / or heat before the cover layer 200 is stripped, so that the cover layer 200 And the adhesive layer 180 is more easily peeled from the substrate 112 by the peeling device 5000. Among them, the light pretreatment is irradiated with ultraviolet light with a wavelength of 254nm, and the pretreatment is performed under an environment with a temperature between 25 ° C and 60 ° C.

Fifth embodiment:

FIGS. 6A to 6D are schematic cross-sectional flow diagrams of peeling the cover layer 200 of the chip package 1000 shown in FIGS. 1A to 1C according to the fifth embodiment of the present invention. In order to facilitate the understanding of the technical features of this embodiment, the following will be described. Explanation will be given with a schematic sectional view shown in FIG. 1B.

Please refer to FIG. 6A, which shows a peeling device 6000 according to a fifth embodiment of the present invention. The peeling device 6000 includes a vacuum nozzle head 601, a platform 616 below the vacuum nozzle head 601, and a control mechanism 614 coupled to the vacuum nozzle head 601. The vacuum nozzle head 601 includes a vacuum chuck 602 having opposite upper and lower surfaces 604 and 606, a vacuum hole 608 passing through the upper and lower surfaces 604 and 606 of the vacuum chuck 602, and a hollow vacuum tube 610 connected to a vacuum pump. The edge of the lower surface 606 of the vacuum chuck 602 is further surrounded by a frame 603, and a seal ring 620, such as an O-ring, is further surrounded inside the frame 603. In addition, the hollow vacuum tube 610 has a hollow pipe 612 coupled to the vacuum hole 608, and the vacuum nozzle head 601 can be controlled to rotate and be lifted relative to the platform under the control mechanism 614 coupled to the vacuum nozzle head 601. Or fall.

Referring to FIG. 6B, the chip package 1000 shown in FIG. 1B is first placed on the platform 616 with the second surface 1121 thereof. Next, referring to FIG. 6C, the control mechanism 614 of the peeling device 6000 is operated, so that the vacuum nozzle head 601 is lowered relative to the platform 616, and the lower surface 606 of the vacuum chuck 602 is pressed against the fourth surface 1222 of the cover layer 200. The frame 603 abuts against the surfaces of the first side wall 250 a, the second side wall 250 b, the third side wall 250 c, the fourth side wall 250 d, and the platform 616 of the chip package 1000 by the inner sealing ring 620. Then, the vacuum pump is started to evacuate the hollow vacuum tube 610 to reach a predetermined vacuum degree Pi, and Pi -90Kpa, so that the chip package 1000 is sucked by the vacuum chuck 602.

Then, referring to FIG. 6D, the operation control mechanism 614 causes the vacuum nozzle head 601 to rotate at a rotation speed of 300 to 750 degrees / second for less than five seconds, so that the vacuum nozzle head 601 generates a torque with respect to the chip package 1000. (torque force), and then the control mechanism 614 is operated to drive the vacuum nozzle head 601 upward to generate a lift force, so that the cover layer 200 and the adhesive layer 180 are affected by the torque and the upward lifting force. The first surface 1122 of the substrate 112 is peeled.

In addition, when the adhesive layer 180 of this embodiment is selected from a light-sensitive resin (such as UV glue), the chip package 1000 may be pre-treated with light and / or heat before the cover layer 200 is stripped, so that the cover layer 200 And the adhesive layer 180 is more easily peeled off the substrate 112 by the peeling device 6000. Among them, the light pretreatment is irradiated with ultraviolet light with a wavelength of 254nm, and the pretreatment is performed under an environment with a temperature between 25 ° C and 60 ° C.

Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can change and combine the above various implementations without departing from the spirit and scope of the present invention. example.

Claims (47)

A peeling device is used for peeling a stacked structure including a substrate and a cap layer. The peeling device includes a vacuum nozzle head including a suction cup with opposite upper and lower surfaces, a through The vacuum holes of the upper and lower surfaces of the suction cup and a hollow vacuum tube coupled to the vacuum holes and a vacuum pump; a stage is located under the vacuum nozzle head and is substantially aligned with the suction cup, so that the The stacking structure can be fixed on the platform; a control mechanism coupled to the vacuum nozzle head so that the vacuum nozzle head can be raised or lowered relative to the platform; and a first cutter including a first body And a first knife edge portion connected to the first body; wherein the first knife edge portion is pressed by the lower surface and adsorbed by the vacuum pump to evacuate the hollow vacuum tube; An interface layer between the base and the cover layer is cut through a first side wall of the stacked structure, and the suction force generated by the vacuum nozzle head and the lifting force generated by the vacuum nozzle head being lifted upward are cut, So that the substrate and the cover layer are peeled . According to the peeling device described in item 1 of the scope of patent application, the first cutter is moved toward the first side wall of the stacked structure in a manner of moving relative to the stacked structure, so that the first blade portion passes through the first The sidewall cuts into the interface layer. The peeling device according to item 2 of the scope of patent application, further includes a second cutter, including a second body and a second knife portion (knife) connected to the second body, wherein the second cutter is also opposite to The stacked structure moves toward a second side wall of the stacked structure, so that the second blade portion is cut into the interface layer through the second side wall, wherein the first and second side walls are located opposite to the stacked structure. side. According to the peeling device described in any one of claims 1 to 3, the nozzle head further includes an edge frame surrounding the edge of the lower surface, and the lower surface is pressed against the cover layer. In this case, the frame can abut against part of the sidewall of the stacked structure. The peeling device according to item 4 of the scope of patent application, wherein the frame further includes a first gap and a second gap that expose the sides of the interface layer immediately adjacent to the first and second side walls of the stacked structure. The first and second blade portions pass through the first and second gaps respectively, and then cut into the interface layer. A method for stripping a surface cover layer of a chip package includes providing a stripping device for a cap layer of a chip package, including: a vacuum nozzle head, including a vacuum nozzle head having opposite upper and lower surfaces. A suction cup, a vacuum hole penetrating the upper and lower surfaces of the suction cup, and a hollow vacuum tube coupled to the vacuum hole and a vacuum pump; a stage is located below the vacuum nozzle head and is substantially the same as the suction cup Aligning; a control mechanism coupled to the vacuum nozzle head so that the vacuum nozzle head can be raised or lowered relative to the platform; and a first cutter including a first body and a connection to the first A first knife portion of the body; a chip package is provided and fixed on the platform, and the chip package includes a substrate including a first surface opposite to the first surface and a second surface adjacent to the first surface A sensing element is formed at a location, and a redistribution layer is formed adjacent to the second surface, and the redistribution layer is electrically connected to the sensing element; a capping layer includes a third surface opposite to the fourth surface Surface, the first The surface includes a bonding area having an area equal to the first surface area, and a peripheral area surrounding the bonding area, and the capping layer covers the first surface of the substrate through the bonding area; and an adhesive A layer between the substrate and the cover layer, and covering the sensing element; wherein the chip package further includes a first, second, and first layer formed by the cover layer, the adhesive layer, and an edge of the substrate; Third and fourth side walls, and the first and second side walls are opposed to each other, and the third and fourth side walls are opposed to each other; the lower surface of the suction cup is pressed against the fourth surface of the cover layer; using the vacuum source Vacuum is applied to the hollow vacuum tube so that the cover layer is attracted by the suction cup; the first cutter is moved toward the first side wall of the chip package in a manner of moving relative to the chip package, so that the first The blade portion enters a peripheral area adjacent to the first side wall, and cuts into the adhesive layer along the third surface located in the peripheral area; and the control mechanism is operated to drive the vacuum nozzle head to lift upward so that the cover layer And this The adhesive layer is peeled off the surface of the substrate of the chip package. The method according to any one of item 6 of the scope of patent application, further comprising a second cutter, including a second body and a second knife connected to the second body, wherein the second cutter is also the same Moving relative to the chip package, approaching the second side wall of the chip package, so that the second blade portion enters the third surface of another peripheral region adjacent to the second side wall and cuts into the adhesive layer. The method according to item 7 of the scope of patent application, wherein the nozzle head further includes an edge frame surrounding the edge of the lower surface, and when the lower surface presses against the cover layer, the frame abuts tightly Parts of the chip package are the first, second, third, and fourth side walls. The method according to item 8 of the scope of patent application, further comprising: a first slit located at a position where the frame abuts the first side wall of the chip package, so that the first blade portion passes through After the first slit, the adhesive layer is cut along a third surface located in the peripheral region; and a second slit is located at a position where the frame is abutted against the second sidewall of the chip package, After the second blade portion passes through the second gap, the interface layer is cut along a third surface located in the peripheral region. The method of claim 6, further comprising a circuit board bonded to the second surface of the substrate. The method according to any one of claims 6 to 10, wherein the sensing element includes an environmental sensing element and / or a biometric sensing element and / or a touch sensing element. The method of claim 11, wherein the biometric sensing element comprises a fingerprint identification sensing element. The method according to item 11 of the scope of patent application, wherein the material constituting the cover layer may be selected from one of the group consisting of glass, sapphire, aluminum nitride, and scotch tape. The method of claim 11, wherein the adhesive layer comprises a light-sensitive material. The method of claim 14, wherein the adhesive layer includes a UV glue. The method according to item 15 of the scope of patent application, wherein the chip package is pre-treated with light and / or heat before being subjected to a peeling process. According to the method described in item 16 of the scope of the patent application, the light pretreatment is irradiated with ultraviolet light having a wavelength of 254 nm. According to the method described in item 16 of the patent application scope, the heating pretreatment is performed under an environment of temperature T, where 25 ° C <T <60 ° C. The method according to item 11 of the scope of patent application, wherein the manufacturing method of the chip package includes: providing a base layer having a first surface and a second surface opposite to each other, and the first surface defines a plurality of components. Forming a plurality of sensing elements adjacent to the first surface, and each element region includes a sensing element; forming an adhesive layer on the first surface and covering the sensing elements; providing A cover layer having a third surface and a fourth surface opposite to each other, and the third surface of the cover layer and the first surface of the substrate are joined together by the adhesive layer, so that the cover layer covers A semiconductor stack structure is formed on the base layer; the semiconductor stack structure is turned over so that it is placed on a carrier board through the fourth surface of the cover plate; and a part of the periphery of each of the device regions is removed. The base layer and the adhesive layer form a plurality of divided lanes separating the element regions; and cutting along each of these divided lanes to form a plurality of independent chip packages. The method of claim 19, wherein a plurality of conductive pads are further formed adjacent to the first surface, and each element region includes at least two conductive pads separated from each other. The method according to item 20 of the patent application scope, wherein before the inversion process, a wiring process is further included, including: forming a plurality of first openings exposing the conductive pads on the second surface of the substrate; forming a An insulating layer covers the second surface and the opening surfaces in a flexible manner; a redistribution layer is formed on the second surface, and the redistribution layer includes a plurality of wires filled in the first openings, and each wire Electrically connect to each of the conductive pads exposed by each of the first openings; form a passivation protection layer on the redistribution layer and include a plurality of second openings exposing each of the wires; and A plurality of conductive contact pads are formed in each of the exposed second openings. A method for stripping a surface cover layer of a chip package includes providing a stripping device for a cap layer of a chip package, including: a vacuum nozzle head, including a vacuum nozzle head having opposite upper and lower surfaces. A suction cup, a vacuum hole penetrating the upper and lower surfaces of the suction cup, and a hollow vacuum tube coupled to the vacuum hole and a vacuum pump; a stage is located below the vacuum nozzle head and is substantially the same as the suction cup Aligning; a control mechanism coupled to the vacuum nozzle head so that the vacuum nozzle head can be raised or lowered relative to the platform; and a first cutter including a first body and a connection to the first A first knife portion of the body; a chip package is provided and fixed on the platform, and the chip package includes: a base including a first surface and a second surface opposite to each other; and a sensing element provided. Near the first surface; a capping layer including a third surface and a fourth surface opposite to each other, the third surface covering the first surface of the substrate; and an adhesive layer between the substrate and Between cap layers The sensing element; wherein the chip package further includes a first, second, third, and fourth sidewall formed by the cover layer, the adhesive layer, and an edge of the substrate, and the first and second sides The side walls are opposed to each other, and the third and fourth side walls are opposed to each other; the lower surface of the suction cup is pressed against the fourth surface of the cover layer; the vacuum pump is used to evacuate the hollow vacuum tube so that the cover layer is held by the suction plate Attracted; moving the first cutter toward the first side wall of the chip package in a manner relative to the chip package, and further causing the first blade portion to cut into the along the third surface of the cover layer An adhesive layer; and operating the control mechanism to drive the vacuum nozzle head upward, so that the cover layer is peeled off the substrate surface of the chip package. The method according to any one of item 22 of the scope of patent application, further comprising a second cutter, including a second body and a second knife connected to the second body, wherein the second cutter is also the same Moving relative to the chip package, approaching the second side wall of the chip package, so that the second blade portion is cut into the adhesive layer along the third surface of the cover layer. The method of claim 23, wherein the nozzle head further includes an edge frame surrounding the edge of the lower surface, and when the lower surface is pressed against the cover layer, the frame is pressed against Parts of the chip package are the first, second, third, and fourth side walls. The method according to item 24 of the scope of patent application, further comprising: a first slit located at a position where the frame abuts the first side wall of the chip package so that the first blade portion passes through After the first slit, the adhesive layer is cut along a third surface located in the peripheral region; and a second slit is located at a position where the frame is abutted against the second sidewall of the chip package, After the second blade portion passes through the second gap, the interface layer is cut along a third surface located in the peripheral region. The method of claim 22, further comprising a circuit board bonded to the second surface of the substrate. The method according to any one of claims 22-26, wherein the sensing element comprises an environmental sensing element and / or a biometric sensing element and / or a touch sensing element. The method of claim 27, wherein the biometric sensing element comprises a fingerprint identification sensing element. The method of claim 27, wherein the material constituting the cover layer may be selected from one of the group consisting of glass, sapphire, aluminum nitride, and scotch tape. The method of claim 27, wherein the adhesive layer comprises a light-sensitive material. The method of claim 30, wherein the adhesive layer comprises a UV glue. The method according to item 31 of the scope of patent application, wherein the wafer package is pre-treated with light and / or heat before being subjected to a peeling process. According to the method described in the patent application No. 32, the light pretreatment is irradiated with ultraviolet light having a wavelength of 254 nm. According to the method described in the patent application No. 32, the heating pretreatment is performed under an environment of temperature T, where 25 ° C <T <60 ° C. A peeling device is used for peeling a stacked structure composed of a substrate and a cap layer. The peeling device includes a vacuum nozzle head, including a suction cup with opposite upper and lower surfaces, and a surround. An edge frame at the edge of the lower surface, a vacuum hole penetrating the upper and lower surfaces of the suction cup, and a hollow vacuum tube coupled to the vacuum hole and a vacuum pump; a stage in the vacuum It is below the nozzle head and is substantially aligned with the suction cup, so that the stacking structure can be fixed on the platform; and a control mechanism is coupled to the vacuum nozzle head, so that the vacuum nozzle head can be driven to rotate, and After being lifted or lowered relative to the platform; wherein the cover layer is pressed against the lower surface of the suction cup and is adsorbed due to the vacuum pump evacuating the hollow vacuum tube, the control mechanism rotates the vacuum nozzle head For a period of time, a torque is generated and the vacuum nozzle head is lifted upwards at the same time, so that the cover layer is peeled off under a torque and an upward lifting force. The peeling device according to item 35 of the patent application scope further includes a sealing ring surrounding the inner side of the frame. A method for stripping a surface cover layer of a chip package includes providing a stripping device for a cap layer of a chip package, including: a vacuum nozzle head, including a vacuum nozzle head having opposite upper and lower surfaces. A suction cup, an edge frame surrounding the edge of the lower surface, a vacuum hole penetrating the upper and lower surfaces of the suction cup, and a hollow vacuum tube coupled to the vacuum hole and a vacuum pump; a stage, Located under the vacuum nozzle head and substantially aligned with the suction cup; and a control mechanism coupled to the vacuum nozzle head so that the vacuum nozzle head can be controlled to rotate and be lifted relative to the platform (lift) or lower; providing a chip package and fixed on the platform, the chip package includes: a substrate including a first surface and a second surface opposite to each other, the second surface facing the platform; The sensing element is disposed near the first surface; a capping layer includes a third surface and a fourth surface opposite to each other, and a side wall surrounding the third and fourth surfaces, wherein, The third surface is covered On the first surface of the substrate; and an adhesive layer located between the substrate and the cover layer and covering the sensing element; operating the control mechanism to lower the vacuum nozzle head toward the platform, and using the suction cup The lower surface of the cover layer is pressed against the fourth surface of the cover layer, and the frame of the suction cup is abutted against a part of the side wall of the cover layer; the hollow vacuum tube is evacuated by the vacuum pump to achieve a predetermined vacuum degree Pi, The cover layer is adsorbed by the nozzle head, Pi -90Kpa; and operating the control mechanism to rotate the vacuum nozzle head at a rotation speed of 300-750 degrees / second for a t time to generate a torque TF (torque force), and drive the vacuum nozzle head upward to generate A lift force LF (lift force) causes the cover layer to be peeled off the chip package under the torque and the lift force, where 0 seconds <tl <5 seconds. The method of claim 37, further comprising a circuit board bonded to the second surface of the substrate. The method according to item 38 of the patent application scope, further comprising a sealing ring surrounding the frame and a part of the side wall of the cover layer, so that the vacuum nozzle head can abut against the cover layer. The method according to any one of claims 37 to 39, wherein the sensing element comprises an environmental sensing element and / or a biometric sensing element and / or a touch sensing element. The method of claim 40, wherein the biometric sensing element comprises a fingerprint identification sensing element. The method according to item 40 of the scope of patent application, wherein the material constituting the cover layer may be selected from one of the group consisting of glass, sapphire, aluminum nitride, and scotch tape. The method of claim 40, wherein the adhesive layer comprises a light-sensitive material. The method according to item 43 of the patent application, wherein the adhesive layer comprises a UV glue. The method according to item 44 of the scope of patent application, wherein the wafer package is pretreated with light and / or heat before being subjected to a peeling process. According to the method described in item 45 of the scope of the patent application, the light pretreatment is irradiated with ultraviolet light having a wavelength of 254 nm. According to the method described in item 45 of the scope of patent application, the heating pretreatment is performed under the environment of temperature T, where 25 ° C <T <60 ° C.