TWI644603B - Folding magnetic coupling package structure, leadframe component thereof and method for manufacturing the same - Google Patents

Folding magnetic coupling package structure, leadframe component thereof and method for manufacturing the same Download PDF

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Publication number
TWI644603B
TWI644603B TW106136719A TW106136719A TWI644603B TW I644603 B TWI644603 B TW I644603B TW 106136719 A TW106136719 A TW 106136719A TW 106136719 A TW106136719 A TW 106136719A TW I644603 B TWI644603 B TW I644603B
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lead frames
wafer
lead
coil portion
coil
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TW106136719A
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TW201918135A (en
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又法 王
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光寶新加坡有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Manufacturing Cores, Coils, And Magnets (AREA)

Abstract

本發明公開的翻轉式磁耦合封裝結構的製造方法包括提供具有架體及連接於架體的第一及第二組引線架的引線架結構,第一組引線架包括第一晶片承載部、第一線圈部、多個第一引腳部及第一浮動引腳,第二組引線架包括第二晶片承載部、第二線圈部、多個第二引腳部及第二浮動引腳;將第一及第二晶片分別設置在第一與第二晶片承載部上且分別電性連接於第一與第二引腳部;及相對於架體翻轉第一組引線架並將第一組引線架移至第二組引線架的上或下方,以在第一與第二組引線架間產生電性隔離,第一與第二線圈部相互對準而產生磁耦合。 A method of fabricating a flip-type magnetic coupling package structure according to the present invention includes providing a lead frame structure having a frame body and first and second sets of lead frames connected to the frame body, the first group of lead frames including a first wafer carrier portion, a coil portion, a plurality of first lead portions and a first floating pin, the second set of lead frames including a second wafer carrying portion, a second coil portion, a plurality of second lead portions and a second floating pin; The first and second wafers are respectively disposed on the first and second wafer carrying portions and electrically connected to the first and second lead portions respectively; and flipping the first set of lead frames relative to the frame body and connecting the first set of leads The shelves are moved up or down to the second set of lead frames to create electrical isolation between the first and second sets of lead frames, the first and second coil portions being aligned with one another to create a magnetic coupling.

Description

翻轉式磁耦合封裝結構及其引線架組件與製造方法 Flip type magnetic coupling package structure and lead frame assembly thereof and manufacturing method thereof

本發明涉及一種引線架組件、包括引線架組件的磁耦合封裝結構及其製造方法,特別是涉及一種使用單一引線架所製造的翻轉式引線架組件、包括引線架組件的磁耦合封裝結構及其製造方法。 The present invention relates to a lead frame assembly, a magnetic coupling package structure including the lead frame assembly, and a method of fabricating the same, and more particularly to a flip type lead frame assembly manufactured using a single lead frame, a magnetic coupling package structure including the lead frame assembly, and Production method.

一般而言,在電子裝置中會具有用以在傳輸器(transmitter)以及接收器(receiver)之間傳遞信號的傳輸方式。舉例而言,已知電隔離功能的信號傳輸方式有:光電耦合式、電容耦合式、誘導耦合(inductive coupling)或是磁耦合(magnetic coupling)。 In general, there will be a transmission method in the electronic device for transmitting signals between the transmitter and the receiver. For example, the signal transmission methods of the known electrical isolation function are: photoelectric coupling type, capacitive coupling type, inductive coupling or magnetic coupling.

在現有技術中,磁耦合隔離技術(magnetic coupling isolation technology)除了可以用於光耦合器(optocoupler)以及光電晶體(optotransistor)應用的場合外,也被用於常見的電子元件中以賦予電子元件電隔離功能,以將隔離器與功能半導體器件集成於一個半導體元件中,例如磁耦合隔離(magnetic coupling)的能源管理半導體元件(power management IC)、磁耦合隔離的控制器區域網路發射接收器(Magnetic coupling CAN bus tranceiver)等之中。 In the prior art, magnetic coupling isolation technology can be used in common electronic components to give electronic components in addition to optocouplers and optotransistors. Isolation function to integrate the isolator and functional semiconductor device into a semiconductor component, such as a magnetic management energy management IC, a magnetically coupled isolated controller area network transmitter receiver ( Magnetic coupling CAN bus tranceiver) and so on.

使用磁耦合技術的半導體隔離件,其通常包括在高頻下運作的驅動電路、一對尺寸在微米(μm)及毫米(mm)之間的微線圈(coils),以及高頻接收器。其中一組線圈(第一線圈)連接於驅動電 路的輸出端,另一組線圈(第二線圈)則連接於接收器的輸入端。兩組線圈彼此電性絕緣(galvanic isolated),因此其等之間不具有電連接。在運作時,來自驅動電路的高頻信號通過第一線圈,在第一線圈和第二線圈之間產生高頻磁場,高頻信號通過磁耦合傳輸至第二線圈。第二線圈將所接收到的磁信號轉換為高頻電壓並輸入接收電路。 Semiconductor spacers using magnetic coupling technology typically include a driver circuit that operates at high frequencies, a pair of microils (micrometers) and millimeters (mm), and a high frequency receiver. One set of coils (first coil) is connected to the drive power At the output of the path, another set of coils (second coil) is connected to the input of the receiver. The two sets of coils are galvanic isolated from each other so that there is no electrical connection between them. In operation, the high frequency signal from the drive circuit passes through the first coil, creating a high frequency magnetic field between the first coil and the second coil, the high frequency signal being transmitted to the second coil by magnetic coupling. The second coil converts the received magnetic signal into a high frequency voltage and inputs it to the receiving circuit.

然而,為了達到兩組線圈之間有效的耦合效果,需要精確設計兩組線圈在橫向的設置相對位置以及在垂直方向的間距,以使兩組線圈在橫向相互對準。同時,還必須將兩組線圈的間距被控制在設計範圍裡。如此一來,可以調節分別設置有兩組線圈的兩個引線架組件的隔離距離,進而調節兩組線圈彼此電性絕緣(galvanic isolation)的效果。在現有技術中,仍然缺乏製作程序簡單且可以輕易調整兩組線圈之間耦合量的製造方法與引線架組件。換句話說,引線架組件以及包含引線架組件的封裝結構的製造方法仍具有改善的空間。 However, in order to achieve an effective coupling effect between the two sets of coils, it is necessary to accurately design the relative positions of the two sets of coils in the lateral direction and the pitch in the vertical direction so that the two sets of coils are aligned with each other in the lateral direction. At the same time, the spacing between the two sets of coils must also be controlled within the design range. In this way, the isolation distance of the two lead frame assemblies respectively provided with two sets of coils can be adjusted, thereby adjusting the effect of galvanic isolation of the two sets of coils. In the prior art, there is still a lack of a manufacturing method and lead frame assembly that is simple in fabrication and can easily adjust the amount of coupling between two sets of coils. In other words, the leadframe assembly and the method of fabricating the package structure including the leadframe assembly still have improved space.

本發明所要解決的技術問題在於,針對現有技術的不足提供一種翻轉式引線架組件、包括翻轉式引線架組件的磁耦合封裝結構及其製造方法。本發明所提供的製造方法是通過單一個引線架結構和引線架摺疊的方法,以及其中特定的設計來形成引線架組件(「雙引線架組件」),且可以通過調整引線架結構中特定區段的尺寸來調整包括雙引線架組件的磁耦合封裝結構的耦合效果。本發明所提供的磁耦合封裝結構可以用於隔離半導體元件,例如隔離器(isolator)。 The technical problem to be solved by the present invention is to provide a flip type lead frame assembly, a magnetic coupling package structure including the flip type lead frame assembly, and a manufacturing method thereof, in view of the deficiencies of the prior art. The manufacturing method provided by the present invention is a method of folding a single lead frame structure and a lead frame, and a specific design thereof to form a lead frame assembly ("double lead frame assembly"), and can adjust a specific area in the lead frame structure The size of the segments is adjusted to include the coupling effect of the magnetically coupled package structure of the dual leadframe assembly. The magnetically coupled package structure provided by the present invention can be used to isolate semiconductor components, such as an isolator.

為了解決上述的技術問題,本發明所採用的其中一技術方案是提供一種翻轉式磁耦合封裝結構的製造方法,其包括:提供一引線架結構,所述引線架結構具有一架體、一連接於所述架體的 第一組引線架以及一連接於所述架體的第二組引線架,其中,所述第一組引線架包括一第一晶片承載部、至少一第一線圈部、多個第一引腳部以及多個第一浮動引腳,且所述第二組引線架包括一第二晶片承載部、至少一第二線圈部、多個第二引腳部以及多個第二浮動引腳;將至少一第一晶片以及至少一第二晶片分別設置在所述第一晶片承載部與所述第二晶片承載部上且分別電性連接於所述第一引腳部與所述第二引腳部;以及相對於所述架體翻轉所述第一組引線架,並將所述第一組引線架移至所述第二組引線架的上方或者下方,以在所述第一組引線架與所述第二組引線架之間產生一高度差並使所述第一組引線架與所述第二組引線架彼此電性隔離;所述第一線圈部與所述第二線圈部相互對準而產生磁耦合。 In order to solve the above technical problem, one technical solution adopted by the present invention is to provide a manufacturing method of a flip type magnetic coupling package structure, comprising: providing a lead frame structure, the lead frame structure having a frame body and a connection On the frame a first set of lead frames and a second set of lead frames connected to the frame body, wherein the first set of lead frames comprises a first wafer carrying portion, at least one first coil portion, and a plurality of first pins And a plurality of first floating pins, and the second set of lead frames includes a second wafer carrier, at least one second coil portion, a plurality of second pin portions, and a plurality of second floating pins; The at least one first wafer and the at least one second wafer are respectively disposed on the first wafer carrying portion and the second wafer carrying portion and electrically connected to the first lead portion and the second lead respectively And flipping the first set of lead frames relative to the frame and moving the first set of lead frames above or below the second set of lead frames to be in the first set of lead frames Generating a height difference from the second set of lead frames and electrically isolating the first set of lead frames from the second set of lead frames; the first coil portion and the second coil portion are mutually Alignment produces magnetic coupling.

為了解決上述的技術問題,本發明所採用的另外一技術方案是,提供一種引線架組件,其包括一第一組引線架以及一第二組引線架,所述第一組引線架包括一用於承載至少一第一晶片的第一晶片承載部、一第一線圈部、多個第一引腳部以及多個第一浮動引腳,所述第二組引線架包括一用於承載至少一第二晶片的第二晶片承載部、一第二線圈部、多個第二引腳部以及多個第二浮動引腳。所述第一組引線架設置於所述第二組引線架的上方或者下方,以使得所述第一線圈部與所述第二線圈部相互對準。 In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a lead frame assembly including a first set of lead frames and a second set of lead frames, the first set of lead frames including a a first wafer carrier portion carrying at least one first wafer, a first coil portion, a plurality of first lead portions, and a plurality of first floating pins, the second group of lead frames including one for carrying at least one a second wafer carrier portion of the second wafer, a second coil portion, a plurality of second pin portions, and a plurality of second floating pins. The first set of lead frames are disposed above or below the second set of lead frames such that the first coil portion and the second coil portion are aligned with each other.

為了解決上述的技術問題,本發明所採用的另外再一技術方案是,提供一種翻轉式磁耦合封裝結構,其包括一第一組引線架、一第二組引線架、一第一晶片、一第二晶片以及一絕緣封裝體。所述第一組引線架包括一第一晶片承載部、一第一線圈部、多個第一引腳部以及多個第一浮動引腳。所述第二組引線架包括一第二晶片承載部、一第二線圈部、多個第二引腳部以及多個第二浮動引腳。第一晶片設置於所述第一晶片承載部,且所述第二晶片設置於所述第二晶片承載部。所述絕緣封裝體封裝所述第一晶片 與所述第二晶片並連接所述第一組引線架與所述第二組引線架,其中,每一個所述第一引腳部的一部分裸露在所述絕緣封裝體外,且每一個所述第二引腳部的一部分裸露在所述絕緣封裝體外。所述第一組引線架設置於所述第二組引線架的上方或者下方,以使得所述第一線圈部與所述第二線圈部相互對準而產生磁耦合;其中,所述第一組引線架與所述第二組引線架彼此電性隔離。 In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a flip type magnetic coupling package structure, which comprises a first set of lead frames, a second set of lead frames, a first chip, and a A second wafer and an insulating package. The first set of lead frames includes a first wafer carrier, a first coil portion, a plurality of first lead portions, and a plurality of first floating pins. The second set of lead frames includes a second wafer carrying portion, a second coil portion, a plurality of second lead portions, and a plurality of second floating pins. The first wafer is disposed on the first wafer carrier and the second wafer is disposed on the second wafer carrier. The insulating package encapsulates the first wafer And connecting the first set of lead frames and the second set of lead frames to the second wafer, wherein a portion of each of the first lead portions is exposed outside the insulating package, and each of the A portion of the second lead portion is exposed outside the insulating package. The first set of lead frames are disposed above or below the second set of lead frames such that the first coil portion and the second coil portion are aligned with each other to generate magnetic coupling; wherein the first The set of lead frames and the second set of lead frames are electrically isolated from each other.

本發明的其中一有益效果在於,本發明所提供的翻轉式磁耦合封裝結構及其引線架組件與製造方法,其能通過“所述第一組引線架設置於所述第二組引線架的上方或者下方,以使得所述第一線圈部與所述第二線圈部相互對準以產生磁耦合”或者“相對於所述架體翻轉所述第一組引線架,並將所述第一組引線架移至所述第二組引線架的上方或者下方”的技術方案,以提升第一線圈部與第二線圈部彼此對齊的精準度,並控制第一線圈部與第二線圈部相互匹配後所產生的磁耦合效果。 One of the beneficial effects of the present invention is that the flip type magnetic coupling package structure and the lead frame assembly and the manufacturing method thereof provided by the present invention can be provided by the first set of lead frames on the second set of lead frames. Upper or lower, such that the first coil portion and the second coil portion are aligned with each other to generate magnetic coupling" or "turning the first group of lead frames relative to the frame body, and the first a technical solution of moving the lead frame to the upper or lower side of the second set of lead frames to improve the accuracy of alignment of the first coil portion and the second coil portion with each other, and controlling the first coil portion and the second coil portion to mutually The magnetic coupling effect produced after matching.

為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,然而所提供的附圖僅用於提供參考與說明,並非用來對本發明加以限制。 For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

P‧‧‧磁耦合封裝結構 P‧‧‧Magnetic coupling package structure

1‧‧‧引線架結構 1‧‧‧ lead frame structure

10‧‧‧架體 10‧‧‧ ‧ body

11‧‧‧第一組引線架 11‧‧‧First set of lead frames

111‧‧‧第一晶片承載部 111‧‧‧First wafer carrier

112‧‧‧第一線圈部 112‧‧‧First coil

113‧‧‧第一引腳部 113‧‧‧First pin section

114‧‧‧第一浮動引腳 114‧‧‧First floating pin

12‧‧‧第二組引線架 12‧‧‧Second set of lead frames

121‧‧‧第二晶片承載部 121‧‧‧Second wafer carrier

122‧‧‧第二線圈部 122‧‧‧Second coil

123‧‧‧第二引腳部 123‧‧‧Second pin section

124‧‧‧第二浮動引腳 124‧‧‧Second floating pin

21‧‧‧第一晶片 21‧‧‧First chip

211‧‧‧第一連接線 211‧‧‧First cable

22‧‧‧第二晶片 22‧‧‧second chip

221‧‧‧第二連接線 221‧‧‧second cable

3‧‧‧封裝體 3‧‧‧Package

A‧‧‧切割線 A‧‧‧ cutting line

B‧‧‧翻轉軸 B‧‧‧Flip axis

d‧‧‧高度差 D‧‧‧ height difference

S‧‧‧彎折部 S‧‧‧Bend

R‧‧‧旋轉方向 R‧‧‧Rotation direction

圖1為本發明其中一實施例所使用的引線架結構的俯視示意圖;圖2為本發明另一實施例所使用的引線架結構的俯視示意圖;圖3為本發明其中一實施例的翻轉式磁耦合封裝結構的製造方法的流程圖;圖4為本發明另一實施例的翻轉式磁耦合封裝結構的製造方法的流程圖;圖5為圖1中沿V-V剖面線所得的局部剖面視圖;圖6為本發明其中一實施例的翻轉式磁耦合封裝結構的製造方法的其中一步驟的示意圖; 圖7為本發明其中一實施例的翻轉式磁耦合封裝結構的製造方法的另一步驟的示意圖;圖8為本發明其中一實施例的翻轉式磁耦合封裝結構的製造方法的再一步驟的示意圖;圖9為本發明其中一實施例所提供的翻轉式磁耦合封裝結構的示意圖;圖10為本發明另一實施例所提供的翻轉式磁耦合封裝結構的示意圖;以及圖11本發明再一實施例所提供的翻轉式磁耦合封裝結構的示意圖。 1 is a top plan view of a lead frame structure used in one embodiment of the present invention; FIG. 2 is a top plan view of a lead frame structure used in another embodiment of the present invention; FIG. 3 is a flip type according to an embodiment of the present invention; FIG. 4 is a flow chart of a method for manufacturing a flip-type magnetic coupling package structure according to another embodiment of the present invention; FIG. 5 is a partial cross-sectional view taken along line VV of FIG. 1; 6 is a schematic diagram of one step of a method of fabricating a flip-type magnetic coupling package structure according to an embodiment of the present invention; FIG. 7 is a schematic diagram showing another step of a manufacturing method of a flip type magnetic coupling package structure according to an embodiment of the present invention; FIG. 8 is still another step of a manufacturing method of a flip type magnetic coupling package structure according to an embodiment of the present invention; FIG. 9 is a schematic diagram of a flip-type magnetic coupling package structure according to an embodiment of the present invention; FIG. 10 is a schematic diagram of a flip-type magnetic coupling package structure according to another embodiment of the present invention; and FIG. A schematic diagram of a flip-type magnetically coupled package structure provided by an embodiment.

以下是通過特定的具體實施例來說明本發明所公開有關“翻轉式磁耦合封裝結構及其引線架組件與製造方法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的精神下進行各種修飾與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 The following is a description of an embodiment of the present invention relating to a "flip type magnetic coupling package structure and its lead frame assembly and manufacturing method" by a specific embodiment, and those skilled in the art can understand the present invention from the contents disclosed in the present specification. Advantages and effects. The present invention may be carried out or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not intended to be stated in the actual size. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the scope of the present invention.

請參閱圖1及圖2。圖1及圖2為本發明不同實施例所使用的引線架結構的俯視示意圖。本發明所提供的翻轉式磁耦合封裝結構的製造方法可以利用單一引線架結構1來形成。換句話說,通過例如如圖1以及圖2所示的引線架結構1,可以在簡單的製造步驟下形成引線架組件以及翻轉式磁耦合封裝結構,同時確保引線架組件以及翻轉式磁耦合封裝結構中一對線圈彼此的對齊精準性及電性絕緣特性。 Please refer to Figure 1 and Figure 2. 1 and 2 are top plan views of a lead frame structure used in various embodiments of the present invention. The method of fabricating the flip-type magnetically coupled package structure provided by the present invention can be formed using a single leadframe structure 1. In other words, the lead frame assembly and the flip type magnetic coupling package structure can be formed in a simple manufacturing step by, for example, the lead frame structure 1 as shown in FIGS. 1 and 2, while ensuring the lead frame assembly and the flip type magnetic coupling package. Alignment accuracy and electrical insulation properties of a pair of coils in a structure.

如圖1以及圖2所示,本發明所使用的引線架結構1包括架體10以及連接於架體10的第一組引線架11以及第二組引線架12。第一組引線架11包括第一晶片承載部111、第一線圈部112、多個第一引腳部113以及多個第一浮動引腳114。第二組引線架包括第二晶片承載部121、第二線圈部122、多個第二引腳部123以及多個第二浮動引腳124。架體10、第一組引線架11以及第二組引線架12可以由導電材料,例如金屬所製成。架體10、第一組引線架11以及第二組引線架12的材料可為相同或不相同。 As shown in FIGS. 1 and 2, the lead frame structure 1 used in the present invention includes a frame body 10 and a first set of lead frames 11 and a second set of lead frames 12 connected to the frame body 10. The first set of lead frames 11 includes a first wafer carrier 111, a first coil portion 112, a plurality of first pin portions 113, and a plurality of first floating pins 114. The second set of lead frames includes a second wafer carrier 121, a second coil portion 122, a plurality of second pin portions 123, and a plurality of second floating pins 124. The frame body 10, the first set of lead frames 11 and the second set of lead frames 12 may be made of a conductive material such as metal. The materials of the frame 10, the first set of lead frames 11, and the second set of lead frames 12 may be the same or different.

第一線圈部112以及第二線圈部122可以由引線架結構1的條型金屬所構成的金屬框或是金屬環所形成。第一線圈部112以及第二線圈部122可以是單圈線圈或是多圈線圈。第一線圈部112與第二線圈部122分別連接於第一浮動引腳114與第二浮動引腳124。第一浮動引腳114是用以支撐第一線圈部112,第二浮動引腳124是用以支撐第二線圈部122。另外,在本發明中,第一線圈部112以及第二線圈部122的數量不在此限制。舉例而言,在第一組引線架11中可以包括對稱地分佈在其中的兩個第一線圈部112,且在第二組引線架12中可以包括對稱地分佈在其中的兩個第二線圈部122。具體來說,兩個第一線圈部112可以分佈在第一晶片承載部111的兩相反側,而兩個第二線圈部122可以分佈在第二晶片承載部121的兩相反側,從而形成兩個電信通道。 The first coil portion 112 and the second coil portion 122 may be formed of a metal frame or a metal ring formed of a strip metal of the lead frame structure 1. The first coil portion 112 and the second coil portion 122 may be a single coil or a multi-turn coil. The first coil portion 112 and the second coil portion 122 are respectively connected to the first floating pin 114 and the second floating pin 124. The first floating pin 114 is for supporting the first coil portion 112, and the second floating pin 124 is for supporting the second coil portion 122. Further, in the present invention, the number of the first coil portion 112 and the second coil portion 122 is not limited thereto. For example, two first coil portions 112 symmetrically distributed therein may be included in the first set of lead frames 11, and two second coils symmetrically distributed therein may be included in the second set of lead frames 12 Part 122. Specifically, the two first coil portions 112 may be distributed on opposite sides of the first wafer carrying portion 111, and the two second coil portions 122 may be distributed on opposite sides of the second wafer carrying portion 121, thereby forming two Telecommunications channels.

須注意的是,除了引線架結構1之外,圖1以及圖2同時繪示設置在第一晶片承載部111上的第一晶片21以及設置在第二晶片承載部121上的第二晶片22,以及用以分別對第一晶片21以及第二晶片22提供電性連接的多條第一連接線211以及多條第二連接線221。另外,圖1與圖2的差異在於,第一組引線架11中的第一晶片承載部111及第一線圈部112,以及第二組引線架12中的第二晶片承載部121及第二線圈部122的設置位置不同。 It should be noted that, in addition to the lead frame structure 1, FIGS. 1 and 2 simultaneously illustrate the first wafer 21 disposed on the first wafer carrier 111 and the second wafer 22 disposed on the second wafer carrier 121. And a plurality of first connection lines 211 and a plurality of second connection lines 221 for providing electrical connection to the first wafer 21 and the second wafer 22, respectively. In addition, FIG. 1 differs from FIG. 2 in that the first wafer carrier portion 111 and the first coil portion 112 of the first group of lead frames 11 and the second wafer carrier portion 121 and the second of the second group of lead frames 12 The arrangement positions of the coil portions 122 are different.

請先參閱圖1,在本發明的其中一實施例中,第一組引線架 11中的第一晶片承載部111是被第一線圈部112包圍,且第一晶片承載部111以及第一線圈部112都通過第一浮動引腳114與架體10連接。相似地,第二組引線架12中的第二晶片承載部121是被第二線圈部122包圍,且第二晶片承載部121以及第二線圈部122都通過第二浮動引腳124與架體10連接。 Referring first to FIG. 1, in one embodiment of the present invention, a first set of lead frames The first wafer carrying portion 111 of the first wafer carrying portion 111 is surrounded by the first coil portion 112, and the first wafer carrying portion 111 and the first coil portion 112 are both connected to the frame body 10 through the first floating pin 114. Similarly, the second wafer carrying portion 121 of the second set of lead frames 12 is surrounded by the second coil portion 122, and the second wafer carrying portion 121 and the second coil portion 122 are both passed through the second floating pin 124 and the frame. 10 connections.

如圖2所示,在本發明的另一實施例中,第一組引線架11中的第一晶片承載部111與第一線圈部112是彼此分離並相鄰設置,且第二組引線架12中的第二晶片承載部121與第二線圈部122是彼此分離而相鄰設置。在本發明中,第一晶片承載部111與第一線圈部112之間以及第二晶片設置部121與第二線圈部122之間的相對位置關係可以依據產品的需求加以調整,在本發明中並不加以限制。 As shown in FIG. 2, in another embodiment of the present invention, the first wafer carrier portion 111 and the first coil portion 112 of the first group of lead frames 11 are separated from each other and disposed adjacent to each other, and the second group of lead frames The second wafer carrying portion 121 and the second coil portion 122 of 12 are disposed apart from each other and disposed adjacent to each other. In the present invention, the relative positional relationship between the first wafer carrying portion 111 and the first coil portion 112 and between the second wafer setting portion 121 and the second coil portion 122 can be adjusted according to the requirements of the product, in the present invention. There are no restrictions.

換句話說,只要能使得引線架組件或是磁耦合封裝結構中的第一線圈部112以及第二線圈部122相互匹配以通過電磁耦合傳遞信號,第一晶片承載部111與第一線圈部112之間以及第二晶片設置部121與第二線圈部122之間的相對位置關係在本發明中並不加以限制。然而,如圖1所示的第一晶片承載部111、第一線圈部112、第二晶片承載部121以及第二線圈部122的設置方式可以在使用最大線圈面積之下有效節省所形成的引線架組件或是磁耦合封裝結構的整體體積並提升耦合效果。因此,較佳地,第一線圈部112圍繞第一晶片承載部111,且第二線圈部122圍繞第二晶片承載部121。 In other words, the first wafer carrier portion 111 and the first coil portion 112 can be made as long as the first coil portion 112 and the second coil portion 122 in the lead frame assembly or the magnetic coupling package structure can be matched to each other to transmit signals by electromagnetic coupling. The relative positional relationship between the second wafer setting portion 121 and the second coil portion 122 is not limited in the present invention. However, the arrangement of the first wafer carrier 111, the first coil portion 112, the second wafer carrier 121, and the second coil portion 122 as shown in FIG. 1 can effectively save the formed leads under the use of the maximum coil area. The frame assembly is either the overall volume of the magnetically coupled package structure and enhances the coupling effect. Therefore, preferably, the first coil portion 112 surrounds the first wafer carrier portion 111, and the second coil portion 122 surrounds the second wafer carrier portion 121.

除此之外,在本發明其他實施利中,第一線圈部112以及第二線圈部122還可以利用由晶片承載部的至少一部分所支撐,藉此降低產品的整體尺寸。 In addition, in other embodiments of the present invention, the first coil portion 112 and the second coil portion 122 may also be supported by at least a portion of the wafer carrying portion, thereby reducing the overall size of the product.

請同樣參閱圖1以及圖2。第一組引線架11以及第二組引線架12還設置有多個第一連接線211以及多個第二連接線221。通過多條第一連接線211以及多條第二連接線221(例如,圖1所示 的其中兩條第一連接線211以及其中兩條第二連接線221),第一晶片承載部111與第一線圈部112彼此電性連接而形成迴路,且第二晶片承載部121與第二線圈部122彼此電性連接而形成封閉電路,且第一晶片承載部111與第二晶片承載部121也可以通過另外的多條第一連接線211以及多條第二連接線221(例如,圖1所示的另外四條第一連接線211以及另外四條第二連接線221)分別與第一引腳部113以及第二引腳部123電性連接而形成封閉電路。 Please also refer to Figure 1 and Figure 2. The first set of lead frames 11 and the second set of lead frames 12 are further provided with a plurality of first connecting lines 211 and a plurality of second connecting lines 221. Through a plurality of first connecting lines 211 and a plurality of second connecting lines 221 (for example, as shown in FIG. 1 Two of the first connecting lines 211 and two of the second connecting lines 221), the first wafer carrying portion 111 and the first coil portion 112 are electrically connected to each other to form a loop, and the second wafer carrying portion 121 and the second The coil portions 122 are electrically connected to each other to form a closed circuit, and the first wafer carrier portion 111 and the second wafer carrier portion 121 may also pass through a plurality of other first connection lines 211 and a plurality of second connection lines 221 (for example, The other four first connecting lines 211 and the other four second connecting lines 221) shown in FIG. 1 are electrically connected to the first lead portion 113 and the second lead portion 123, respectively, to form a closed circuit.

在本發明中,多個第一引腳部113以及多個第二引腳部123的數量以及形狀可以依據產品需求加以設計以及調整,在本發明中並不加以限制。另外,有關多條第一連接線211以及多條第二連接線221的連接方式以及具體型態,在本發明中同樣不加以限制,且可以由該項發明技術領域中具有通常知識者依據其專業知識加以理解及設計。 In the present invention, the number and shape of the plurality of first lead portions 113 and the plurality of second lead portions 123 can be designed and adjusted according to product requirements, and are not limited in the present invention. In addition, the connection manner and specific types of the plurality of first connecting lines 211 and the plurality of second connecting lines 221 are also not limited in the present invention, and may be based on the general knowledge in the technical field of the invention. Expertise is understood and designed.

接下來,請參閱圖3以及圖4。圖3以及圖4分別為本發明不同實施例的磁耦合封裝結構的製造方法的流程圖。如圖3所示,磁耦合封裝結構的製造方法包括:提供引線架結構,引線架結構具有架體、連接於架體的第一組引線架以及連接於架體的第二組引線架,其中,第一組引線架包括第一晶片承載部、第一線圈部以及多個第一引腳部,且第二組引線架包括第二晶片承載部、第二線圈部以及多個第二引腳部(步驟S100);將至少一第一晶片以及至少一第二晶片分別設置在第一晶片承載部與第二晶片承載部上且分別電性連接於第一引腳部與第二引腳部(步驟S102);以及相對於架體翻轉第一組引線架,並將第一組引線架移至第二組引線架的上方或者下方,以使得第一線圈部與第二線圈部相互匹配(步驟S104),以產生磁耦合。 Next, please refer to FIG. 3 and FIG. 4. 3 and 4 are flow charts of a method of fabricating a magnetically coupled package structure in accordance with various embodiments of the present invention, respectively. As shown in FIG. 3, the manufacturing method of the magnetic coupling package structure includes: providing a lead frame structure, the lead frame structure having a frame body, a first group of lead frames connected to the frame body, and a second group of lead frames connected to the frame body, wherein The first set of lead frames includes a first wafer carrying portion, a first coil portion, and a plurality of first lead portions, and the second set of lead frames includes a second wafer carrying portion, a second coil portion, and a plurality of second pins a portion (step S100); the at least one first wafer and the at least one second wafer are respectively disposed on the first wafer carrying portion and the second wafer carrying portion and electrically connected to the first lead portion and the second lead portion, respectively (Step S102); and flipping the first set of lead frames with respect to the frame body, and moving the first set of lead frames above or below the second set of lead frames such that the first coil portion and the second coil portion match each other ( Step S104) to generate magnetic coupling.

相較於圖3所示的磁耦合封裝結構的製造方法,圖4所示的磁耦合封裝結構的製造方法進一步包含步驟S103、S105以及 S106。具體來說,圖4所示的製造方法包括下列步驟:提供引線架結構,引線架結構具有架體、連接於架體的第一組引線架以及連接於架體的第二組引線架,其中,第一組引線架包括第一晶片承載部、第一線圈部以及多個第一引腳部,且第二組引線架包括第二晶片承載部、第二線圈部以及多個第二引腳部(步驟S100);將至少一第一晶片以及至少一第二晶片分別設置在第一晶片承載部與第二晶片承載部上且分別電性連接於第一引腳部與第二引腳部(步驟S102);在第一組引線架中形成至少一彎折部(步驟S103);相對於架體翻轉第一組引線架,並將第一組引線架移至第二組引線架的上方或者下方,以使得第一線圈部與第二線圈部相互匹配(步驟S104);形成一絕緣封裝體以封裝所述第一晶片與所述第二晶片並連接所述第一組引線架與所述第二組引線架(步驟S105);以及移除架體(步驟S106)。 The manufacturing method of the magnetic coupling package structure shown in FIG. 4 further includes steps S103 and S105, and the manufacturing method of the magnetic coupling package structure shown in FIG. S106. Specifically, the manufacturing method shown in FIG. 4 includes the following steps: providing a lead frame structure having a frame body, a first group of lead frames connected to the frame body, and a second group of lead frames connected to the frame body, wherein The first set of lead frames includes a first wafer carrying portion, a first coil portion, and a plurality of first lead portions, and the second set of lead frames includes a second wafer carrying portion, a second coil portion, and a plurality of second pins a portion (step S100); the at least one first wafer and the at least one second wafer are respectively disposed on the first wafer carrying portion and the second wafer carrying portion and electrically connected to the first lead portion and the second lead portion, respectively (Step S102): forming at least one bent portion in the first set of lead frames (step S103); inverting the first set of lead frames with respect to the frame body, and moving the first set of lead frames to above the second set of lead frames Or underneath, so that the first coil portion and the second coil portion are matched with each other (step S104); forming an insulating package to encapsulate the first wafer and the second wafer and connecting the first set of lead frames and The second set of lead frames (step S105); and the removal frame Body (step S106).

值得一提的是,本發明所提供的磁耦合封裝結構的製造方法中,步驟S102以及步驟S103不是必須依照上述順序進行。換句話說,在相對於架體翻轉第一組引線架,即步驟S104之前,可以是先完成第一晶片21以及第二晶片22的設置再形成彎折部,或是先形成彎折部,再將第一晶片21以及第二晶片22分別設置在第一晶片承載部111以及第二晶片承載部121上。在以下說明中,是以先進行步驟S102再進行步驟S103的情況進行說明。 It should be noted that in the manufacturing method of the magnetic coupling package structure provided by the present invention, step S102 and step S103 are not necessarily performed in accordance with the above sequence. In other words, before the first set of lead frames is flipped relative to the frame body, that is, before the step S104, the first wafer 21 and the second wafer 22 may be disposed first to form a bent portion, or the bent portion may be formed first. The first wafer 21 and the second wafer 22 are respectively disposed on the first wafer carrying portion 111 and the second wafer carrying portion 121. In the following description, the case where the step S102 is performed first and then the step S103 is performed will be described.

請同時配合圖1以及圖5至8。圖5為圖1中沿V-V剖面線所得的局部剖面視圖;圖6為磁耦合封裝結構的製造方法的步驟S103的示意圖,圖7為步驟S104的示意圖,而圖8為步驟S105的示意圖。 Please also cooperate with Figure 1 and Figures 5 to 8. 5 is a partial cross-sectional view taken along line V-V of FIG. 1. FIG. 6 is a schematic view of step S103 of the method of manufacturing a magnetic coupling package structure, FIG. 7 is a schematic view of step S104, and FIG. 8 is a schematic view of step S105.

首先,在步驟S100中,提供引線架結構1。引線架結構1可以是圖1或是圖2所示的引線架結構1,其具有架體10、第一組引線架11以及第二組引線架12。如圖5所示,引線架結構1的第一組引線架11與第二組引線架12彼此相鄰且具有相似的結構。 第一組引線架11包括第一晶片承載部111、第一線圈部112以及第一引腳部113,而第二組引線架12包括第二晶片承載部121、第二線圈部122以及第二引腳部123。另外,第一組引線架11與第二組引線架12還分別包括多個第一浮動引腳114與多個第二浮動引腳124。 First, in step S100, the lead frame structure 1 is provided. The lead frame structure 1 may be the lead frame structure 1 shown in FIG. 1 or FIG. 2, which has a frame body 10, a first set of lead frames 11, and a second set of lead frames 12. As shown in FIG. 5, the first set of lead frames 11 and the second set of lead frames 12 of the lead frame structure 1 are adjacent to each other and have a similar structure. The first set of lead frames 11 includes a first wafer carrying portion 111, a first coil portion 112, and a first lead portion 113, and the second set of lead frames 12 includes a second wafer carrying portion 121, a second coil portion 122, and a second Pin portion 123. In addition, the first set of lead frames 11 and the second set of lead frames 12 further include a plurality of first floating pins 114 and a plurality of second floating pins 124, respectively.

接著,在步驟102中,將第一晶片21以及第二晶片22分別設置在第一晶片承載部111與第二晶片承載部121上,以分別電性連接於第一引腳部113與第二引腳部123。第一晶片21以及第二晶片22各自的數量在本發明中並不加以限制。在如圖1以及圖2所示的實施例中,引線架結構1的第一組引線架11以及第二組引線架12分別包括一個第一晶片21以及一個第二晶片22。舉例而言,第一晶片21與第二晶片22都是積體電路晶片(IC)。 Next, in step 102, the first wafer 21 and the second wafer 22 are respectively disposed on the first wafer bearing portion 111 and the second wafer carrier portion 121 to be electrically connected to the first lead portion 113 and the second portion, respectively. Pin portion 123. The number of each of the first wafer 21 and the second wafer 22 is not limited in the present invention. In the embodiment shown in FIGS. 1 and 2, the first set of lead frames 11 and the second set of lead frames 12 of the lead frame structure 1 respectively include a first wafer 21 and a second wafer 22. For example, the first wafer 21 and the second wafer 22 are integrated circuit wafers (ICs).

舉例而言,第一晶片21包括線圈驅動電路單元,第二晶片22包括接收電路單元。一高頻訊號通過線圈驅動電路單元與第一線圈部112的電性連接以傳輸至第一線圈部112,且第二線圈部122通過接收電路單元與第二線圈部122的電性連接以接收一高頻電壓。或是,在另一個實施例中,第一晶片21可以包括接收電路單元,而第二晶片22包括線圈驅動電路單元。 For example, the first wafer 21 includes a coil driving circuit unit, and the second wafer 22 includes a receiving circuit unit. A high frequency signal is electrically connected to the first coil portion 112 through the coil driving circuit unit to be transmitted to the first coil portion 112, and the second coil portion 122 is electrically connected to the second coil portion 122 through the receiving circuit unit to receive A high frequency voltage. Alternatively, in another embodiment, the first wafer 21 may include a receiving circuit unit and the second wafer 22 includes a coil driving circuit unit.

藉此,由線圈驅動電路單元所輸入的輸入訊號可以通過第一線圈部112與第二線圈部122在橫向方向上相互對準所產生的有效磁耦合而傳輸到輸出端(接收電路單元)。具體來說,第一組引線架11的第一線圈部112通過其中一部分的第一連接線211與第一晶片21一起形成一個第一封閉電路。對第一封閉電路通入電流可以產生高頻交流磁場。高頻交流磁場通過第一線圈部112與第二線圈部122的磁耦合,而在第二組引線架12的第二線圈部122、其中一部分的第二連接線221以及第二晶片22形成的第二封閉電路中產生高頻交流電流。據此,可以將電訊號從第一晶片21(例如發射器)傳輸到與第一晶片21電隔離的第二晶片22(例如接收器)。 Thereby, the input signal input by the coil driving circuit unit can be transmitted to the output terminal (receiving circuit unit) by the effective magnetic coupling generated by the first coil portion 112 and the second coil portion 122 being aligned with each other in the lateral direction. Specifically, the first coil portion 112 of the first group of lead frames 11 forms a first closed circuit together with the first wafer 21 through a portion of the first connection line 211. A high frequency alternating magnetic field can be generated by applying current to the first closed circuit. The high frequency alternating magnetic field is magnetically coupled to the second coil portion 122 by the first coil portion 112, and formed at the second coil portion 122 of the second group of lead frames 12, a portion of the second connecting line 221, and the second wafer 22 A high frequency alternating current is generated in the second closed circuit. Accordingly, the electrical signal can be transmitted from the first wafer 21 (e.g., the transmitter) to the second wafer 22 (e.g., the receiver) that is electrically isolated from the first wafer 21.

步驟S102中第一晶片21以及第二晶片22的設置方式在本發明中並不加以限制。另外,在步驟S102中,可以在設置第一晶片21以及第二晶片22的同時設置多條第一連接線211以及多條第二連接線221。舉例而言,第一連接線211以及第二連接線221可以以打線方式連接於第一晶片21、第二晶片22、第一晶片承載部111、第二晶片承載部121、第一線圈部112、第二線圈部122、第一引腳部113以及第二引腳部123之間。 The arrangement of the first wafer 21 and the second wafer 22 in step S102 is not limited in the present invention. In addition, in step S102, a plurality of first connection lines 211 and a plurality of second connection lines 221 may be provided while the first wafer 21 and the second wafer 22 are disposed. For example, the first connection line 211 and the second connection line 221 may be connected to the first wafer 21, the second wafer 22, the first wafer carrier 111, the second wafer carrier 121, and the first coil portion 112 in a wire bonding manner. The second coil portion 122 is between the first lead portion 113 and the second lead portion 123.

接下來,請參圖6。在步驟S103中,在第一組引線架11中形成至少一彎折部S。事實上,在本發明中,彎折部S可以形成於第一組引線架11中或是形成於第二組引線架12中。換句話說,本發明所提供的製造方法可以包括形成至少一彎折部在第一組引線架11與第二組引線架12兩者之中的至少一個上。在圖6所示的實施例中,彎折部S是形成於第一引腳部113與第一線圈部112之間以及第一引腳部113與第一晶片承載部111之間。舉例而言,彎折部S可以通過彎折第一浮動引腳114而形成。形成彎折部S可以避免在後續步驟中,第一線圈部112與第二線圈部122彼此接觸,也可以避免設置在第一晶片承載部111上的第一晶片21與設置在第二晶片承載部121上的第二晶片22彼此接觸。 Next, please refer to Figure 6. In step S103, at least one bent portion S is formed in the first group of lead frames 11. In fact, in the present invention, the bent portion S may be formed in the first set of lead frames 11 or in the second set of lead frames 12. In other words, the manufacturing method provided by the present invention may include forming at least one bent portion on at least one of the first set of lead frames 11 and the second set of lead frames 12. In the embodiment shown in FIG. 6, the bent portion S is formed between the first lead portion 113 and the first coil portion 112 and between the first lead portion 113 and the first wafer carrying portion 111. For example, the bent portion S can be formed by bending the first floating pin 114. Forming the bent portion S can prevent the first coil portion 112 and the second coil portion 122 from contacting each other in a subsequent step, and can also prevent the first wafer 21 disposed on the first wafer carrier portion 111 from being disposed on the second wafer carrier The second wafers 22 on the portion 121 are in contact with each other.

承上所述,只要可以達到上述避免第一組引線架11與第二組引線架12在產品中不相互接觸的目的,即,確保第一組引線架11與第二組引線架12彼此電性絕緣,彎折部S的具體尺寸以及彎折的方向也可以被調整。具體來說,彎折部S的詳細參數可以依據製造方法的流程,以及目標產品的磁耦合及電壓絕緣特性而加以設計。舉例而言,可以依據後續步驟S104中對第一組引線架11的翻轉方向來決定彎折部S的彎折方向。 As described above, as long as the above-mentioned avoidance of avoiding mutual contact between the first set of lead frames 11 and the second set of lead frames 12 in the product can be achieved, that is, ensuring that the first set of lead frames 11 and the second set of lead frames 12 are electrically connected to each other The insulating material, the specific size of the bent portion S and the direction of the bending can also be adjusted. Specifically, the detailed parameters of the bent portion S can be designed according to the flow of the manufacturing method and the magnetic coupling and voltage insulation characteristics of the target product. For example, the bending direction of the bending portion S can be determined according to the turning direction of the first group of lead frames 11 in the subsequent step S104.

如圖6所示,在此實施例中,是在第一組引線架11中形成彎折部S。請配合圖1所示,在形成彎折部S之前,可沿第一組引線架11中所標示切割線A處截斷,使得接近第一組引線架11與第二組引線架12的交界處的多個第一引腳部113以及多個第一浮動引腳114向下彎折。換句話說,就圖1的圖面來看,位於兩條切割線A的連線的右側的多個第一引腳部113以及多個第一浮動引腳114可以(向進入圖面的方向)被彎折,使得位於兩條切割線A的連線的左側的第一晶片承載部121以及第一線圈部122向下(即,向進入圖面的方向)位移至另一平面。 As shown in FIG. 6, in this embodiment, the bent portion S is formed in the first group of lead frames 11. Please be cut along the cutting line A indicated in the first set of lead frames 11 so as to be close to the junction of the first set of lead frames 11 and the second set of lead frames 12 before forming the bent portion S. The plurality of first pin portions 113 and the plurality of first floating pins 114 are bent downward. In other words, as seen from the drawing of FIG. 1, the plurality of first pin portions 113 and the plurality of first floating pins 114 located on the right side of the line connecting the two cutting lines A may (in the direction of entering the drawing) ) is bent such that the first wafer carrying portion 121 and the first coil portion 122 located on the left side of the line connecting the two cutting lines A are displaced downward (i.e., in the direction of entering the drawing) to another plane.

如上所述,用以承載第一晶片21的第一晶片承載部111以及第一線圈部112相對於第二組引線架12是向下降低至另一個平面。換句話說,通過彎折部S的設置,第一晶片承載部111以及第一線圈部112被向下位移,使得第一組引線架11的一部分與第二組引線架12之間具有高度差d,使得第一線圈部112與第二線圈部122之間相距等同於高度差d的距離。 As described above, the first wafer carrier 111 and the first coil portion 112 for carrying the first wafer 21 are lowered downward to the other plane with respect to the second group of lead frames 12. In other words, by the arrangement of the bent portion S, the first wafer carrying portion 111 and the first coil portion 112 are displaced downward such that a difference in height between a portion of the first set of lead frames 11 and the second set of lead frames 12 d, such that the distance between the first coil portion 112 and the second coil portion 122 is equal to the height difference d.

如前所述,高度差d可以依據目標產品的磁耦合及電壓絕緣特性加以設計。換句話說,調整高度差d的大小可以調整兩組引線架之間的隔離電壓,以及兩個線圈部之間的磁耦合強度。在本發明中,高度差d較佳為介於100至500微米之間。換句話說,在目標產品(引線架組件或磁耦合封裝結構)中,第一線圈部112與第二線圈部122之間的距離較佳為介於100至500微米之間。將高度差d控制於介於100至500微米之間可以在確保第一線圈部112與第二線圈部122之間的隔離電壓和磁耦合效率之外,有效減少目標產品的體積。 As mentioned above, the height difference d can be designed according to the magnetic coupling and voltage insulation characteristics of the target product. In other words, adjusting the height difference d can adjust the isolation voltage between the two sets of lead frames and the magnetic coupling strength between the two coil portions. In the present invention, the height difference d is preferably between 100 and 500 μm. In other words, in the target product (lead frame assembly or magnetically coupled package structure), the distance between the first coil portion 112 and the second coil portion 122 is preferably between 100 and 500 microns. Controlling the height difference d between 100 and 500 μm can effectively reduce the volume of the target product in addition to the isolation voltage and magnetic coupling efficiency between the first coil portion 112 and the second coil portion 122.

接下來,請參閱圖7。於步驟S104中,相對於架體1翻轉第一組引線架11,並將第一組引線架11移至第二組引線架12的上方或者下方,以使得第一線圈部112與第二線圈部122相互匹配並產生磁耦合。具體來說,請參閱圖1所示,第一組引線架11是沿著翻轉軸B,朝向旋轉方向R而相對於架體1被翻轉180度,使得第一組引線架11移至第二組引線架12的上方。在進行步驟S104時,架體1保持在原先的位置。 Next, please refer to Figure 7. In step S104, the first set of lead frames 11 are flipped relative to the frame body 1, and the first set of lead frames 11 are moved above or below the second set of lead frames 12 such that the first coil portion 112 and the second coil Portions 122 match each other and create a magnetic coupling. Specifically, referring to FIG. 1 , the first set of lead frames 11 are flipped 180 degrees with respect to the frame body 1 along the inversion axis B toward the rotation axis R, so that the first group of lead frames 11 are moved to the second position. Above the set of lead frames 12. When the step S104 is performed, the frame 1 is held at the original position.

值得一提的是,假使在形成彎折部S的步驟S103中,彎折部S是通過將第一組引線架11的第一引腳部113向下彎折而形成,在步驟S104中,第一組引線架11會被翻轉至第二組引線架12上方,方可避免第一晶片21與第二晶片22相互接觸或是第一線圈部112與第二線圈部122相互接觸。相對地,假使在步驟S103中,彎折部S是通過將第一組引線架11的第一引腳部113向上彎折而形成,在步驟S104中,第一組引線架11會被翻轉至第二組引線架12下方。換句話說,形成彎折部S的步驟與翻轉第一組引線架11的步驟必須相互配合。 It is to be noted that, in the step S103 of forming the bent portion S, the bent portion S is formed by bending the first lead portion 113 of the first group of lead frames 11 downward, in step S104, The first set of lead frames 11 are flipped over the second set of lead frames 12 to prevent the first wafer 21 and the second wafer 22 from contacting each other or the first coil portion 112 and the second coil portion 122 are in contact with each other. In contrast, if the bending portion S is formed by bending the first lead portion 113 of the first group of lead frames 11 upward in step S103, the first group of lead frames 11 is turned over to step S104. The second set of lead frames 12 is below. In other words, the step of forming the bent portion S and the step of turning the first set of lead frames 11 must cooperate.

通過步驟S104,第一組引線架11的第一線圈部112與第二組引線架12的第二線圈部122之間具有由彎折部S所形成的高度差d。如前所述,通過控制d的數值,可以調整後續形成的引線架組件或磁耦合封裝結構的耦合以及電壓絕緣效果。除此之外,翻轉第一組引線架11的步驟可以一次進行,即,在同一步驟中翻轉180度,或是分次進行,即分別在多個步驟中進行不同角度的翻轉。 In step S104, the first coil portion 112 of the first group of lead frames 11 and the second coil portion 122 of the second group of lead frames 12 have a height difference d formed by the bent portion S. As previously mentioned, by controlling the value of d, the coupling and voltage insulation effects of the subsequently formed leadframe assembly or magnetically coupled package structure can be adjusted. In addition to this, the step of flipping the first set of lead frames 11 can be performed at one time, that is, by 180 degrees in the same step, or in successive steps, that is, flipping at different angles in a plurality of steps, respectively.

在圖5至圖8所顯示的實施例中,完成步驟S104後,如圖8所示,第一線圈部112會設置在第二線圈部122的正上方且與第二線圈部122相互平行,使得第一晶片21與第二晶片22相對設置。另外,第一線圈部112與第二線圈部122會彼此對齊(aligned),進而確保第一線圈部112與第二線圈部122之間的耦合效果。除此之外,第一線圈部112與第二線圈部122之間具有一個不導電的間隔(間隔距離為高度差d)。 In the embodiment shown in FIG. 5 to FIG. 8 , after step S104 is completed, as shown in FIG. 8 , the first coil portion 112 is disposed directly above the second coil portion 122 and parallel to the second coil portion 122 . The first wafer 21 is disposed opposite to the second wafer 22. In addition, the first coil portion 112 and the second coil portion 122 are aligned with each other, thereby ensuring the coupling effect between the first coil portion 112 and the second coil portion 122. In addition to this, there is a non-conductive interval between the first coil portion 112 and the second coil portion 122 (the separation distance is the height difference d).

在使第一線圈部112與第二線圈部122相互匹配後,可以進一步進行步驟S105,即,形成絕緣封裝體3以封裝(molding)第一晶片21與第二晶片22並連接第一組引線架11與所述第二組引線架12。請參閱圖9所示,封裝體3包覆第一組引線架11的第一晶片承載部111、第一線圈部112、第二組引線架12的第二晶片承載部121、第二線圈部122以及分別設置在第一晶片承載部111以 及第二晶片承載部121上的第一晶片21以及第二晶片22。封裝體3的一部分填充(設置)於第一組引線架11與第二組引線架12之間,以將第一線圈部112與第二線圈部122彼此絕緣。 After the first coil portion 112 and the second coil portion 122 are matched with each other, step S105 may be further performed, that is, the insulating package 3 is formed to mold the first wafer 21 and the second wafer 22 and connect the first group of leads. The frame 11 and the second set of lead frames 12. Referring to FIG. 9 , the package 3 covers the first wafer carrier portion 111 of the first group of lead frames 11 , the first coil portion 112 , the second wafer carrier portion 121 of the second group of lead frames 12 , and the second coil portion 122 and respectively disposed on the first wafer carrier 111 And the first wafer 21 and the second wafer 22 on the second wafer carrier 121. A portion of the package 3 is filled (disposed) between the first set of lead frames 11 and the second set of lead frames 12 to insulate the first coil portion 112 and the second coil portion 122 from each other.

另外,每一個第一引腳部113的一部分裸露在絕緣封裝體3外,且每一個第二引腳部123的一部分裸露在絕緣封裝體3外。第一浮動引腳114的一部分裸露在絕緣封裝體3外,且第二浮動引腳124的一部分裸露在絕緣封裝體3外。由封裝體3裸露的第一引腳部113的一部分以及第二引腳部123的一部分可以與其他電子元件進行電性連接。舉例而言,第一引腳部113的一部分以及第二引腳部123的一部分可以提供磁耦合封裝結構所需的隔離電壓。 In addition, a portion of each of the first lead portions 113 is exposed outside the insulating package 3, and a portion of each of the second lead portions 123 is exposed outside the insulating package 3. A portion of the first floating pin 114 is exposed outside the insulating package 3, and a portion of the second floating pin 124 is exposed outside the insulating package 3. A portion of the first lead portion 113 exposed by the package 3 and a portion of the second lead portion 123 may be electrically connected to other electronic components. For example, a portion of the first lead portion 113 and a portion of the second lead portion 123 can provide an isolation voltage required for the magnetically coupled package structure.

請再次參閱圖4,在步驟S105之後,本發明實施例所提供的磁耦合封裝結構的製造方法還進一步包括移除架體10。具體來說,架體10在製作過程中可以用於支撐第一組引線架11以及第二組引線架12。在通過封裝體3連接第一組引線架11與所述第二組引線架12後,架體10可以被裁切(deflash,trim and form)及移除。將架體10移除的方式在本發明中不加以限制。在移除架體10的同時,在切除裸露在絕緣的封裝體3外的第一浮動引腳114與第二浮動引腳124時。值得注意的是,在本發明中,第一浮動引腳114與第二浮動引腳124的切除方向相反,並且是由半導體元件封裝之內向外切除,以增加隔離距離,從而保證隔離電壓。 Referring to FIG. 4 again, after the step S105, the method for manufacturing the magnetic coupling package structure provided by the embodiment of the present invention further includes removing the frame 10. In particular, the frame 10 can be used to support the first set of lead frames 11 and the second set of lead frames 12 during fabrication. After the first set of lead frames 11 and the second set of lead frames 12 are connected through the package 3, the frame 10 can be trimmed (deflash, trim and form) and removed. The manner in which the frame body 10 is removed is not limited in the present invention. While the frame body 10 is being removed, the first floating pin 114 and the second floating pin 124 exposed outside the insulated package 3 are cut off. It should be noted that, in the present invention, the first floating pin 114 and the second floating pin 124 are opposite to each other, and are cut outward from the inside of the semiconductor component package to increase the isolation distance, thereby ensuring the isolation voltage.

值得注意的是,在本發明中,於步驟S104之後與步驟S105之前,還可以包括在第一組引線架11與第二組引線架12之間設置聚醯亞胺薄膜,以提高隔離電壓。換句話說,聚醯亞胺薄膜可以增強第一組引線架11與第二組引線架12之間的電隔離效果。另外,通過設置聚醯亞胺薄膜,第一線圈部112與第二線圈部122之間的高度差(即間隔的距離)可以被有效減少至介於100至200微米之間。如此一來,可以在確保隔離電壓之下同時增加磁耦合效 率。 It should be noted that, in the present invention, after step S104 and before step S105, a polyimide film may be disposed between the first set of lead frames 11 and the second set of lead frames 12 to increase the isolation voltage. In other words, the polyimide film enhances the electrical isolation between the first set of lead frames 11 and the second set of lead frames 12. Further, by providing the polyimide film, the difference in height (i.e., the distance of the interval) between the first coil portion 112 and the second coil portion 122 can be effectively reduced to between 100 and 200 μm. In this way, the magnetic coupling effect can be increased while ensuring the isolation voltage. rate.

接下來,請參閱圖10及圖11。圖10及圖11為本發明另外兩個實施例所提供的磁耦合封裝結構的示意圖。相較於圖9所示的實施例,圖10及圖11所示的實施例的磁耦合封裝結構P在彎折部的數量以及第一晶片21與第二晶片22設置的位置上有所不同。具體來說,如圖10所示,除了第一組引線架11的第一引腳部113形成有彎折部S之外,第二組引線架12的第二引腳部123也形成有彎折部S。換句話說,第一線圈部112與第二線圈部122之間的距離可以通過在第一引腳部113、第一浮動引腳114、第二引腳部123以及第二浮動引腳124中都形成彎折部S來加以調整。 Next, please refer to FIG. 10 and FIG. 10 and 11 are schematic views of a magnetic coupling package structure provided by two other embodiments of the present invention. The magnetic coupling package structure P of the embodiment shown in FIGS. 10 and 11 differs in the number of the bent portions and the positions at which the first wafer 21 and the second wafer 22 are disposed, compared to the embodiment shown in FIG. . Specifically, as shown in FIG. 10, in addition to the first lead portion 113 of the first group of lead frames 11, a second bent portion S is formed, and the second lead portion 123 of the second set of lead frames 12 is also formed with a bent portion. Folding part S. In other words, the distance between the first coil portion 112 and the second coil portion 122 can pass through the first lead portion 113, the first floating pin 114, the second lead portion 123, and the second floating pin 124. The bent portion S is formed to be adjusted.

相較於圖9以及圖10,圖11所示的實施例中,第一晶片21以及第二晶片22的設置方式有所不同。具體而言,在圖11中,第一晶片21與第二晶片22是分別設置在彼此背對的兩個晶片承載部上,使得第一晶片21與第二晶片22相對設置。換句話說,相較於圖10的磁耦合封裝結構P中設置有第一晶片21與第二晶片22的兩個表面是彼此相對,使得第一晶片21與第二晶片22相對設置,圖11中的第一晶片21與第二晶片22是彼此背對。如此一來,可以減少高度差d而增加磁耦合效率。事實上,針對第一晶片21與第二晶片22的設置方式,在本發明中並不加以限制。 Compared with FIG. 9 and FIG. 10, in the embodiment shown in FIG. 11, the arrangement of the first wafer 21 and the second wafer 22 is different. Specifically, in FIG. 11, the first wafer 21 and the second wafer 22 are respectively disposed on the two wafer carriers facing away from each other such that the first wafer 21 and the second wafer 22 are disposed opposite each other. In other words, the two surfaces of the magnetic coupling package structure P in which the first wafer 21 and the second wafer 22 are disposed are opposed to each other such that the first wafer 21 and the second wafer 22 are disposed opposite each other, FIG. The first wafer 21 and the second wafer 22 are opposite to each other. In this way, the height difference d can be reduced to increase the magnetic coupling efficiency. In fact, the manner in which the first wafer 21 and the second wafer 22 are disposed is not limited in the present invention.

本發明另外提供一種引線架組件,以及一種磁耦合封裝結構。本發明所提供的引線架組件以及磁耦合封裝結構P可以通過上述磁耦合封裝結構的製造方法來形成。因此,有關引線架組件以及磁耦合封裝結構P的結構以及製造方法在此不再次敘述。 The present invention further provides a lead frame assembly, and a magnetically coupled package structure. The lead frame assembly and the magnetic coupling package structure P provided by the present invention can be formed by the above-described manufacturing method of the magnetic coupling package structure. Therefore, the structure and manufacturing method of the lead frame assembly and the magnetic coupling package structure P will not be described again.

[實施例的有益效果] [Advantageous Effects of Embodiments]

本發明的有益效果在於,本發明技術方案所提供的引線架組件、包括引線架組件的磁耦合封裝結構P及其製造方法,其能通過“所述第一組引線架11設置於所述第二組引線架12的上方或 者下方,以使得所述第一線圈部112與所述第二線圈部122相互匹配以產生磁耦合”或者“相對於所述架體10翻轉所述第一組引線架11,並將所述第一組引線架11移至所述第二組引線架12的上方或者下方”的技術方案,以提升第一線圈部112與第二線圈部122彼此對齊的精準度,並控制第一線圈部112與第二線圈部122相互匹配後所產生的磁耦合效果。 The beneficial effects of the present invention are the lead frame assembly provided by the technical solution of the present invention, the magnetic coupling package structure P including the lead frame assembly, and the manufacturing method thereof, which can be provided by the first set of lead frames 11 Above the two sets of lead frames 12 or Bottom, such that the first coil portion 112 and the second coil portion 122 are matched to each other to generate a magnetic coupling" or "the first set of lead frames 11 are inverted with respect to the frame body 10, and the The first set of lead frames 11 are moved to the upper or lower side of the second set of lead frames 12 to improve the accuracy of the alignment of the first coil portion 112 and the second coil portion 122 with each other, and to control the first coil portion The magnetic coupling effect produced by the matching of the second coil portion 122 and the second coil portion 122.

具體來說,本發明所提供的磁耦合封裝結構P可以適用於半導體封裝元件,例如,微型變壓器中,且可以通過簡單的製造方法配合尺寸設計達到使位於單一個引線架結構1的不同區域(第一組引線架11以及第二組引線架12)中的線圈部自動化對齊的效果。除此之外,通過封裝體3的設置,第一線圈部112以及第二線圈部122彼此相互高度絕緣。本發明所提供的磁耦合封裝結構P可以具有5kV以上的絕緣電壓。 In particular, the magnetic coupling package structure P provided by the present invention can be applied to a semiconductor package component, such as a micro-transformer, and can be dimensioned to achieve different regions of a single leadframe structure 1 by a simple manufacturing method ( The effect of the automatic alignment of the coil portions in the first set of lead frames 11 and the second set of lead frames 12). In addition to this, the first coil portion 112 and the second coil portion 122 are highly insulated from each other by the arrangement of the package 3. The magnetic coupling package structure P provided by the present invention may have an insulation voltage of 5 kV or more.

除此之外,在本發明中,第一線圈部112以及第二線圈部122相互橫向對準而產生有效的磁耦合,使得訊號可以由輸入端(例如反射器)通過線圈耦合而傳輸到輸出端(例如接收器)並輸出。除此之外,第一線圈部112以及第二線圈部122的垂直距離可以通過對引線架結構1的設計而控制。舉例而言,調整第一線圈部112所在的第一組引線架11與第二線圈部122所在的第二組引線架12的隔離距離,可以調整兩個線圈彼此電性絕緣的效果。 In addition, in the present invention, the first coil portion 112 and the second coil portion 122 are laterally aligned with each other to generate an effective magnetic coupling, so that the signal can be transmitted to the output through the coil coupling by the input terminal (eg, a reflector). End (such as receiver) and output. In addition to this, the vertical distance of the first coil portion 112 and the second coil portion 122 can be controlled by the design of the lead frame structure 1. For example, adjusting the isolation distance between the first set of lead frames 11 where the first coil portion 112 is located and the second set of lead frames 12 where the second coil portion 122 is located can adjust the effect of electrically insulating the two coils from each other.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及附圖內容所做的等效技術變化,均包含於本發明的申請專利範圍內。 The above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the present specification and the contents of the drawings are included in the application of the present invention. Within the scope of the patent.

Claims (10)

一種翻轉式磁耦合封裝結構的製造方法,其包括:提供一引線架結構,所述引線架結構具有一架體、一連接於所述架體的第一組引線架以及一連接於所述架體的第二組引線架,其中,所述第一組引線架包括一第一晶片承載部、至少一第一線圈部、多個第一引腳部以及多個支撐所述第一線圈部的第一浮動引腳,且所述第二組引線架包括一第二晶片承載部、至少一第二線圈部、多個第二引腳部以及多個支撐所述第二線圈部的第二浮動引腳;將至少一第一晶片以及至少一第二晶片分別設置在所述第一晶片承載部與所述第二晶片承載部上且分別電性連接於所述第一引腳部與所述第二引腳部;以及相對於所述架體翻轉所述第一組引線架,並將所述第一組引線架移至所述第二組引線架的上方或者下方,以在所述第一組引線架與所述第二組引線架之間產生一高度差並使所述第一組引線架與所述第二組引線架彼此電性隔離;所述第一線圈部與所述第二線圈部相互對準而產生磁耦合。 A manufacturing method of a flip-type magnetic coupling package structure, comprising: providing a lead frame structure, the lead frame structure having a frame body, a first set of lead frames connected to the frame body, and a frame connected to the frame a second set of lead frames, wherein the first set of lead frames includes a first wafer carrying portion, at least one first coil portion, a plurality of first lead portions, and a plurality of supporting the first coil portions a first floating pin, and the second set of lead frames includes a second wafer carrier, at least one second coil portion, a plurality of second pin portions, and a plurality of second floats supporting the second coil portion a pin; at least one first wafer and at least one second wafer are respectively disposed on the first wafer bearing portion and the second wafer carrier portion and electrically connected to the first pin portion and the a second lead portion; and flipping the first set of lead frames relative to the frame body and moving the first set of lead frames above or below the second set of lead frames to Generating a height between a set of lead frames and the second set of lead frames And the first set and the second set of lead frame are electrically isolated from the lead frame; the first coil portion and the second coil portion are aligned with each other to generate magnetic coupling. 如請求項1所述的翻轉式磁耦合封裝結構的製造方法,其中,在相對於所述架體翻轉所述第一組引線架之前,還進一步包括:形成至少一彎折部在所述第一組引線架與所述第二組引線架兩者之中的至少一個上。 The manufacturing method of the flip-type magnetic coupling package structure of claim 1, wherein before the flipping the first set of lead frames with respect to the frame body, the method further includes: forming at least one bent portion at the At least one of a set of lead frames and the second set of lead frames. 如請求項1所述的翻轉式磁耦合封裝結構的製造方法,其中,在相對於所述架體翻轉所述第一組引線架之後,還進一步包括:形成一絕緣封裝體,以封裝所述第一晶片與所述第二晶片並連接所述第一組引線架與所述第二組引線架,其中,所述第一浮動引腳的一部分裸露在所述絕緣封裝體外且所述第二浮 動引腳的一部分裸露在所述絕緣封裝體外;以及移除裸露在所述絕緣封裝體外的一部分所述第一浮動引腳以及裸露在所述絕緣封裝體的一部分所述第二浮動引腳;其中,每一個所述第一引腳部的一部分裸露在所述絕緣封裝體外,且每一個所述第二引腳部的一部分裸露在所述絕緣封裝體外,所述第一引腳部的所述部分以及所述第二引腳部的所述部分用以分別提供一隔離電壓至所述第一組引線架以及所述第二組引線架;其中,所述第一浮動引腳被裸露在外的部分與所述第二浮動引腳被裸露在外的部分是沿相反方向被移除;其中,所述絕緣封裝體的一部分設置於所述第一組引線架與所述第二組引線架之間。 The manufacturing method of the flip-type magnetic coupling package structure of claim 1, wherein after the first set of lead frames are reversed with respect to the frame body, the method further includes: forming an insulating package to encapsulate the a first wafer and the second wafer are connected to the first set of lead frames and the second set of lead frames, wherein a portion of the first floating pins are exposed outside the insulating package and the second float a portion of the movable pin is exposed outside the insulating package; and removing a portion of the first floating pin exposed outside the insulating package and a portion of the second floating pin exposed to the insulating package; Wherein a portion of each of the first lead portions is exposed outside the insulating package, and a portion of each of the second lead portions is exposed outside the insulating package, the first lead portion And the portion of the second lead portion for providing an isolation voltage to the first set of lead frames and the second set of lead frames, respectively; wherein the first floating pin is exposed And a portion of the second floating pin that is exposed is removed in an opposite direction; wherein a portion of the insulating package is disposed on the first set of lead frames and the second set of lead frames between. 如請求項3所述的翻轉式磁耦合封裝結構的製造方法,其中,在形成所述絕緣封裝體的步驟之前,還進一步包括:在所述第一組引線架與所述第二組引線架之間設置一聚醯亞胺薄膜以提高所述隔離電壓。 The manufacturing method of the flip-type magnetic coupling package structure according to claim 3, further comprising, before the step of forming the insulating package, the first set of lead frames and the second set of lead frames A polyimide film is placed between them to increase the isolation voltage. 一種引線架組件,其包括:一第一組引線架,所述第一組引線架包括一用於承載至少一第一晶片的第一晶片承載部、一第一線圈部、多個第一引腳部以及多個支撐所述第一線圈部的第一浮動引腳;以及一第二組引線架,所述第二組引線架包括一用於承載至少一第二晶片的第二晶片承載部、一第二線圈部、多個第二引腳部以及多個支撐所述第二線圈部的第二浮動引腳;其中,所述第一組引線架設置於所述第二組引線架的上方或者下方,以使得所述第一線圈部與所述第二線圈部相互對準,並使得所述第一晶片與所述第二晶片相對設置。 A lead frame assembly includes: a first set of lead frames, the first set of lead frames including a first wafer carrying portion for carrying at least one first wafer, a first coil portion, and a plurality of first leads a leg and a plurality of first floating pins supporting the first coil portion; and a second set of lead frames, the second group of lead frames including a second wafer carrier for carrying at least one second wafer a second coil portion, a plurality of second lead portions, and a plurality of second floating pins supporting the second coil portion; wherein the first set of lead frames are disposed on the second set of lead frames Upper or lower, such that the first coil portion and the second coil portion are aligned with each other, and the first wafer is disposed opposite to the second wafer. 如請求項5所述的引線架組件,其中,所述第一線圈部與所述第二線圈部之間具有介於100至500微米之間的一高度差。 The lead frame assembly of claim 5, wherein the first coil portion and the second coil portion have a height difference of between 100 and 500 microns. 一種翻轉式磁耦合封裝結構,其包括:一第一組引線架,所述第一組引線架包括一第一晶片承載部、一第一線圈部、多個第一引腳部以及多個支撐所述第一線圈部的第一浮動引腳;一第二組引線架,所述第二組引線架包括一第二晶片承載部、一第二線圈部、多個第二引腳部以及多個支撐所述第二線圈部的第二浮動引腳;一第一晶片,所述第一晶片設置在所述第一晶片承載部;一第二晶片,所述第二晶片設置在所述第二晶片承載部;以及一絕緣封裝體,所述絕緣封裝體封裝所述第一晶片與所述第二晶片並連接所述第一組引線架與所述第二組引線架,其中,每一個所述第一引腳部的一部分裸露在所述絕緣封裝體外,且每一個所述第二引腳部的一部分裸露在所述絕緣封裝體外;其中,所述第一組引線架設置於所述第二組引線架的上方或者下方,以使得所述第一線圈部與所述第二線圈部相互對準而產生磁耦合;其中,所述第一組引線架與所述第二組引線架彼此電性隔離。 A flip type magnetic coupling package structure includes: a first set of lead frames, the first set of lead frames including a first wafer carrying portion, a first coil portion, a plurality of first lead portions, and a plurality of supports a first floating lead of the first coil portion; a second set of lead frames, the second set of lead frames including a second wafer carrying portion, a second coil portion, a plurality of second lead portions, and a plurality a second floating pin supporting the second coil portion; a first wafer, the first wafer is disposed on the first wafer carrier; a second wafer, the second wafer is disposed in the first a second wafer carrying portion; and an insulating package encapsulating the first wafer and the second wafer and connecting the first set of lead frames and the second set of lead frames, wherein each a portion of the first lead portion is exposed outside the insulating package, and a portion of each of the second lead portions is exposed outside the insulating package; wherein the first set of lead frames are disposed on the Above or below the second set of lead frames The first coil portion and the second coil portion are aligned with each other to generate magnetic coupling; wherein the first set and the second set of lead frame lead frame are electrically isolated. 如請求項7所述的翻轉式磁耦合封裝結構,其中,所述第一晶片包括一線圈驅動電路單元,所述第二晶片包括一接收電路單元,所述第一晶片通過一第一連接線而與所述第一線圈部形成一第一封閉電路,所述第二晶片通過一第二連接線而與所述第二線圈部形成一第二封閉電路。 The flip-type magnetic coupling package structure of claim 7, wherein the first wafer comprises a coil driving circuit unit, the second wafer comprises a receiving circuit unit, and the first wafer passes through a first connecting line And forming a first closed circuit with the first coil portion, the second wafer forming a second closed circuit with the second coil portion through a second connecting line. 如請求項7所述的翻轉式磁耦合封裝結構,其中,一高頻訊號通過一線圈驅動電路單元與所述第一線圈部的電性連接以傳輸至所述第一線圈部,且所述第二線圈部通過一接收電路單元與所述第二線圈部的電性連接以接收一高頻電壓。 The flip-type magnetic coupling package structure of claim 7, wherein a high frequency signal is electrically connected to the first coil portion through a coil driving circuit unit to be transmitted to the first coil portion, and The second coil portion is electrically connected to the second coil portion through a receiving circuit unit to receive a high frequency voltage. 如請求項7所述的翻轉式磁耦合封裝結構,其中,所述第一晶 片與所述第二晶片彼此背對。 The flip type magnetic coupling package structure according to claim 7, wherein the first crystal The sheet and the second wafer are opposite each other.
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