TWI638452B - Room temperature oscillator - Google Patents

Abstract

The present invention provides a room temperature oscillator, characterized in that the room temperature oscillator has a diode, and the two-pole system is composed of a porous germanium structure and a two-electrode layer, and the electrode layers are respectively disposed on the The porous tantalum structure has a plurality of high porosity layers and a plurality of low porosity layers formed on the substrate, and the high porosity layers are spaced apart from the low porosity layers. The structure; wherein, when the diode is supplied with a bias power supply, the voltage across the diode oscillates between two voltage values, thereby causing the room temperature oscillator to generate a stable oscillation waveform of a fixed frequency. In this way, the room temperature oscillator provided by the invention can transmit the oscillating waveform of the fixed frequency at room temperature without passing through other processes through the characteristics of the material itself.

Description

Room temperature oscillator

The present invention is in the field of oscillators, and more particularly to a room temperature oscillator that oscillates over a range of room temperatures by relying entirely on material properties after passing current or voltage.

According to the current oscillators, they are widely used in various wired and wireless electronic products or systems. In the military, machinery, communications, electronics, medical and other consumer industries, there are products that use oscillators. Therefore, in today's electronic systems, One of the important components, and in the harmonic oscillator, in addition to the feedback oscillator, the most commonly used is a negative differential resistance (NDR) oscillator. In general, NDRs are usually complex circuits using LC circuits and CMOS amplifiers. There are only a few special two-terminal diodes, such as the Gunn diode, and many recently discussed resonant tunneling diodes. (RTDs, Resonant tunneling diodes), etc., can be formed in a simple diode.

However, the above-mentioned diode oscillators are all in the low power range, and the RTD needs to be in an extremely low temperature state to generate an oscillating waveform. The reason is that the RTD oscillator needs to rely on quantum electrons to generate an oscillating waveform, but the general oscillation At room temperature, the activity of the hot electrons is more active, which obscures the activity of the quantum electrons, so the activity of the quantum electrons cannot be detected, and the oscillation waveform generated by the quantum electrons is not lifted. Therefore, the conventional method reduces the temperature to such an extent that the thermal electrons are almost inactive to highlight the activity of the quantum electrons, so that the oscillation waveform can be detected and the oscillator can be formed. However, the cryogenic oscillator is very narrow in terms of application It is narrow and cannot be used in a wide range of applications. Therefore, how to make an oscillator that can detect an oscillating waveform at room temperature and has an oscillating waveform with a fixed frequency is an important issue.

In view of this, the present inventors feel that they have not perfected their efforts and painstakingly studied, and based on their accumulated experience in the research for many years, and then provided a room temperature oscillator, in order to improve the lack of the above-mentioned prior art.

Accordingly, it is an object of the present invention to provide an oscillator that can operate at room temperature and that is capable of generating an oscillating waveform of high power and a fixed frequency at room temperature.

In order to achieve the above object, the room temperature oscillator of the present invention is characterized in that the room temperature oscillator has a diode composed of a porous germanium structure and a two-electrode layer, and the electrode layer is Separately disposed at two ends of the porous tantalum structure, the porous tantalum structure is formed on a substrate having a plurality of high porosity layers and a plurality of low porosity layers, and the high porosity layers and the low porosity layers are a structure for spacing; wherein, when the diode is supplied with a bias power supply, the voltage across the diode oscillates between two voltage values, thereby making the room temperature oscillator stable to a fixed frequency Oscillating waveform. In this way, after passing through the energy source, the characteristics of the material itself can make the oscillator generate an oscillating waveform at room temperature.

In some embodiments, the bias supply is a fixed current to cause the room temperature oscillator to generate an oscillating waveform through material properties using current.

Preferably, the high porosity layer and the low porosity layer are formed by anodization etching on the germanium substrate using an etching solution and a current having a periodic high and low variation to utilize a periodically varying current etching. An oscillator capable of generating oscillation at room temperature is produced.

Preferably, an etching solution and a voltage having a periodic high and low variation are utilized Anodization etching is performed on the germanium substrate to form the high-porosity layer and the low-porosity layers to form an oscillator capable of generating oscillation at room temperature by periodically varying voltage etching.

Preferably, an etching solution and a light source having a periodic light-dark change are used for illuminating the anode substrate to form the high-porosity layer and the low-porosity layer to utilize the cycle. A source of varying light is etched into an oscillator that is capable of oscillating at room temperature.

In some embodiments, the bias supply is a fixed voltage to drive the room temperature oscillator through the material characteristics to produce an oscillating waveform.

Preferably, the high porosity layer and the low porosity layer are formed by anodization etching on the germanium substrate using an etching solution and a current having a periodic high and low variation to utilize a periodically varying current etching. An oscillator capable of generating oscillation at room temperature is produced.

Preferably, the high porosity layer and the low porosity layer are formed by anodization etching on the germanium substrate by using an etching solution and a voltage having a periodic high and low variation to utilize a periodically varying voltage etching. An oscillator capable of generating oscillation at room temperature is produced.

Preferably, an etching solution and a light source having a periodic light-dark change are used for illuminating the anode substrate to form the high-porosity layer and the low-porosity layer to utilize the cycle. A source of varying light is etched into an oscillator that is capable of oscillating at room temperature.

In addition, the germanium substrate may further have a plurality of dopants, and the doping concentration changes periodically from the top of the germanium substrate to the depth, and then anodization is performed on the germanium substrate by using an etching solution. The high porosity layer and the low porosity layers are formed to be etched to form an oscillator capable of oscillating at room temperature by utilizing a difference in doping concentration.

In this way, the room temperature oscillator provided by the invention can penetrate the characteristics of the material itself, and can generate oscillation at room temperature without adding another process, and is an oscillation waveform of high power and fixed frequency. Therefore, the disadvantages that the conventional oscillator can only be used at low temperature are improved, and the characteristics that can be used at room temperature are utilized, thereby expanding the scope of application, so that the present invention can have more subsequent applications and increase practicality.

1‧‧‧ room temperature oscillator

11‧‧‧II

111‧‧‧Porous 矽 structure

112‧‧‧electrode layer

1111‧‧‧矽 substrate

1112‧‧‧High porosity layer

1113‧‧‧low porosity layer

2‧‧‧ bias power supply

1 is a schematic circuit diagram of a preferred embodiment of the present invention.

2 is a schematic structural view of a preferred embodiment of the present invention.

Figure 3 is a graph of etch current and voltage versus etch time for a preferred embodiment of the invention.

Fig. 4 is a I-V diagram of a diode of a preferred embodiment of the invention.

FIG. 5A is a schematic diagram showing the oscillation mechanism of the diode of the preferred embodiment of the present invention after applying a fixed bias current.

FIG. 5B is a schematic diagram showing the oscillation mechanism of the diode of the preferred embodiment of the present invention after applying a fixed bias current.

Fig. 6 is a view showing a comparison of an oscillating waveform and a sine wave generated by a diode of a preferred embodiment of the present invention.

In the following description, the same components are denoted by the same reference numerals for the sake of understanding.

Please refer to FIG. 1 and FIG. 2, which are circuit diagrams and structural diagrams of a preferred embodiment of the present invention. As shown in the figure, the room temperature oscillator 1 of the present invention is characterized in that the room temperature oscillator 1 has a diode 11 which is composed of a porous germanium structure 111 and a two-electrode layer 112. The electrode layers 112 are respectively disposed at two ends of the porous tantalum structure 111, and the porous tantalum structure 111 is formed on the tantalum substrate 1111 with a plurality of high porosity layers 1112 and a plurality of low porosity layers 1113, and The high-porosity layer 1112 and the low-porosity layer 1113 are spaced apart from each other; wherein when the diode 11 is supplied with a bias power source 2, the voltage across the diode 11 is The oscillation between the two voltage values causes the room temperature oscillator 1 to generate a stable oscillation waveform of a fixed frequency. In the present embodiment, the bias power supply 2 is a result of using a fixed current for subsequent experiments. Of course, a fixed voltage may be used, and is not limited thereto.

In this embodiment, the Miller index of the crystal plane of the germanium substrate 1111 is (100), and the resistance is 1~10Ω. Cm, and the associated anodizing etching process is established in the Teflon cavity. In addition, the etching solution is prepared by mixing hydrofluoric acid and ethanol, and the mixing ratio of hydrofluoric acid and ethanol is 1:4, the anode is a copper sheet to make metal contact with the crucible substrate, and the cathode is silver plate. . Moreover, all experiments and measurements in this example were performed at room temperature.

The chemical reaction between the germanium substrate and the etching solution is expressed as follows: Si+2HF+2h ⁺ →SiF ₂ +2H ⁺ SiF ₂ +4H ⁺ →H ₂ +H ₂ SiF ₆

In the HF-based electrolyte, the fluoride ion is continuously driven by the etching voltage to move to the surface of the germanium substrate, and generates H ₂ SiF ₆ with the hole (h ⁺ ) and the germanium atom. Since H ₂ SiF ₆ is soluble, when H ₂ SiF _{6 is} dissolved in the electrolyte, nano-sized pores are formed on the ruthenium substrate 111 to cause vacancy to occur. This process can form the porous tantalum structure 111.

In the anodizing etching, the HF concentration of the electrolytic solution, the concentration of h ⁺ in the tantalum substrate 1111, and the etching current density are three important factors for the control of details such as the pore size of the porous tantalum structure 111. In this embodiment, by adjusting the end value of the etching current, that is, alternating between 6 mA and 2 mA, and the etching current lasts for 15 seconds at each end point, and the number of alternating cycles is 10 times. The porous tantalum structure 111 is formed, and the area of etching is 5.3 square centimeters, and other parameters such as voltage are constant, that is, only the current value changes periodically. Since the etching current was alternated between 6 mA and 2 mA, the etching current had a density of 1.13 and 0.38 mA/cm ^{-2 , respectively} . In addition, the porous germanium structure 111 can be formed by adjusting the two end values of the etching current in the foregoing manner, but although different combinations of high and low etching currents can form the porous germanium structure 111, when the etching current is two When the endpoint values are 6 mA and 2 mA, the diode 11 produced will have more pronounced NDR and oscillation properties.

In other embodiments, when the anode etching is performed, the voltage is changed to a periodic high or low voltage, other parameters such as an etching current are fixed, or the light and dark of the light source are periodically changed as an etching behavior. One of the conditions, and other parameters such as an etch current and an etch voltage are constant values; or the ruthenium substrate 1111 may have a plurality of dopants therein, and the doping concentration is different from the top of the ruthenium substrate 1111 with depth The periodic high and low variations are performed, and the etching solution is used to perform anodization etching on the germanium substrate 1111 to form the high porosity layer 1112 and the low porosity layer 1113, and other parameters such as an etching current and an etching voltage are Value. This provides a variety of process options for anode etching, not limited to periodically varying currents.

Please refer to FIG. 3, which is a data diagram of etching current and voltage versus etching time for a preferred embodiment of the present invention. As shown in the figure, the solid line in the figure represents the eclipse. The voltage across the electrode layer 112 is indicated by the dotted line, and the dotted line indicates the etching current. As can be seen from the figure, the etching current is alternately replaced between 6 mA and 2 mA because the etching current changes periodically, resulting in etching. The current density also changes periodically, so that a periodic change in porosity occurs, and thus the porous crucible structure 111 is formed on the crucible substrate 1111.

Please refer to FIG. 4, which is an I-V characteristic diagram of a diode of a preferred embodiment of the present invention. As shown, it can be clearly seen that the diode 11 can provide a distinct NDR curve, especially in the third quadrant, the relative peak value is (-6.8V, -64.6mA), and the trough value is (- 6.9V, -8.2mA), so the peak-to-valley current ratio is as high as 7.9.

The porous germanium structure 111 is formed by adjusting two different porosityes generated by the end values of the etching currents, and the high porosity layers 1112 and the low porosity layers 1113 are actually correspondingly different in size. Multiple microcolumns, the two larger or smaller microcolumn systems correspond to two quantum confinement effects, two band gaps, and two electron mobility. Due to the relationship between the confinement effect and the scattering effect, the electron mobility is higher in the larger microcylinder (high porosity layer 1112) compared to the smaller microcylinder (low porosity layer 1113). In the low voltage region, electrons tend to conduct in the larger microcylinder (high porosity layer 1112) rather than in the smaller microcylinder (low porosity layer 1113). When the applied voltage reaches a limit, a sharp scattering effect is produced, and the electrons have enough energy to overcome the discontinuous band and cross the nano-scale pores into the smaller micro-cylinder (low porosity layer) In 1113), the average mobility will drop suddenly and the NDR phenomenon will occur.

Please refer to FIG. 5A and FIG. 5B together, which is a schematic diagram of the oscillation mechanism of the diode of the preferred embodiment of the present invention after applying a fixed bias current. As shown in the figure, when the diode 11 is supplied with the bias power source 2 (here, a fixed current), the voltage across the diode 11 oscillates between two voltage values, thereby generating an approximate sine wave. A stable oscillation waveform of a fixed frequency. In this embodiment, when the fixed current is applied to the two-electrode layer 112 and the value is set to -70 mA, the operating point of the NDR curve is moved from the initial state Q ₀ (0 V, 0 mA) to the current peak point. Q _p (-15.2V, -64.6mA), because this point is very close to the value of the fixed current (-70mA), so it is very easy to reach the Q _p +dQ _p point (-16.0V) due to the inertia of the overcurrent effect. -17.0mA). However, the Q _p +dQ _p point is not in a stable state on the NDR curve, so the system temporarily drops the fixed current flowing through the diode 11 to Q ₃ +dQ ₃ point (-16V, -17.0 mA) for stability. However, at a moment after falling more than ₃ points of Q ₃ +dQ, the fixed current will have an inertia that continues to move forward, so the fixed current will continue to fall to 10.0 mA along the NDR curve. At this time, there are two stable states on the NDR curve, one is Q ₃ point (-12.0V, -10mA), the other is Q ₁ point (-4.0V, -10mA), and the Q ₁ point is also the NDR curve and Q. _{3 One} of the three points at which the initial circuit load line intersects, thus attracting the operating point from Q ₃ to Q ₁ and will repeat the process as harmonic motion, as shown in Figure 5B .

Furthermore, as shown in FIG. 6 and see Annex 1 together with solid line is for a sine wave oscillation waveform was broken line of the present invention, this experiment can be seen in the results point to Q ₃ Q ₁ point The waveform is indeed perfectly matched to a sinusoidal waveform having a frequency of 101.3 kHz, so that the room temperature oscillator of the present invention can indeed produce an oscillating waveform having a fixed frequency, and more preferably, it can almost coincide with a sinusoidal waveform. Then, after the operating point returns to Q ₁ point, since the current value of the fixed current continues to increase to -70 mA, the operating point moves toward the point Q _p +dQ _V +dQ _i , and then continues along the almost straight NDR curve. Move to the point Q _p , complete an oscillation cycle and continue to continue this cycle steadily as mentioned at the beginning. Moreover, although the Q ₂ point on the NDR curve in Fig. 5A is the intersection of one of the NDR curves and the circuit load line, the Q ₂ point is only a transient state between Q ₁ and Q ₃ rather than a stable state, so the operating point Will not stay here.

In summary, the present invention does provide a room temperature oscillator 1 of the first N-type NDR curve made of porous tantalum material, so that the room temperature oscillator 1 can be made possible by utilizing the material properties of the porous tantalum itself. The NDR characteristic is operated at room temperature, and an oscillating waveform having a fixed frequency can be generated, and the oscillating waveform has an amplitude of 12.4 V and a frequency of 101.3 kHz, and can have a stable peak-to-valley current ratio of up to 7.9. Further, the diode 11 in the room temperature oscillator 1 is made of a material base, and therefore can be highly integrated with the current mainstream V-based VLSI.

However, the above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the practice of the present invention, so that it is common knowledge in the art or equivalent or easy to be familiar with the technology. Variations and modifications made by those skilled in the art without departing from the spirit and scope of the invention are intended to be included within the scope of the invention.

Claims (9)

A room temperature oscillator is characterized in that the room temperature oscillator has a diode consisting of a porous crucible structure and a two-electrode layer, and the electrode layers are respectively disposed on the porous crucible structure. At both ends, the porous tantalum structure is a structure in which a plurality of high porosity layers and a plurality of low porosity layers are formed on a substrate, and the high porosity layers are spaced apart from the low porosity layers, and The ruthenium substrate has a plurality of dopants therein, and the doping concentration changes periodically from the top of the ruthenium substrate to the depth, and then anodization is performed on the ruthenium substrate by using an etching solution to form the a high porosity layer and the low porosity layer; wherein, when the diode is supplied with a bias power supply, the voltage across the diode oscillates between two voltage values, thereby making the room temperature The oscillator produces a stable oscillation waveform at a fixed frequency. The room temperature oscillator of claim 1, wherein the bias power source is a fixed current. The room temperature oscillator of claim 2, wherein the high porosity layer is formed by performing anodization etching on the germanium substrate by using an etching solution and a current having a periodic high and low variation Low porosity layer. The room temperature oscillator of claim 2, wherein the high porosity layer is formed by performing anodization etching on the germanium substrate by using an etching solution and a voltage having a periodic high or low variation Low porosity layer. The room temperature oscillator of claim 2, wherein the etching is performed by using an etching solution and a light source having a periodic light-dark change to form the high-porosity by performing anodization etching on the germanium substrate. The rate layer and the low porosity layer. The room temperature oscillator of claim 1, wherein the bias power source is a fixed voltage. The room temperature oscillator of claim 6, wherein the high porosity layer is formed by performing anodization etching on the germanium substrate with an etching solution and a current having a periodic high and low variation. Low porosity layer. The room temperature oscillator of claim 6, wherein the high porosity layer is formed by performing anodization etching on the germanium substrate with an etching solution and a voltage having a periodic high or low variation Low porosity layer. The room temperature oscillator of claim 6, wherein the etching is performed by using an etching solution and a light source having a periodic light-dark change to form the high-porosity by performing anodization etching on the germanium substrate. The rate layer and the low porosity layer.