TWI630968B - Processing method of single crystal substrate - Google Patents
Processing method of single crystal substrate Download PDFInfo
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- TWI630968B TWI630968B TW104107783A TW104107783A TWI630968B TW I630968 B TWI630968 B TW I630968B TW 104107783 A TW104107783 A TW 104107783A TW 104107783 A TW104107783 A TW 104107783A TW I630968 B TWI630968 B TW I630968B
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- single crystal
- crystal substrate
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- amorphous
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- 239000000758 substrate Substances 0.000 title claims abstract description 214
- 239000013078 crystal Substances 0.000 title claims abstract description 122
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000005498 polishing Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000000227 grinding Methods 0.000 claims abstract description 15
- 239000003082 abrasive agent Substances 0.000 claims abstract description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 19
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 16
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 15
- 239000006061 abrasive grain Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000003892 spreading Methods 0.000 claims description 4
- 230000007480 spreading Effects 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- 230000001012 protector Effects 0.000 abstract description 21
- 230000001681 protective effect Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 description 80
- 235000012431 wafers Nutrition 0.000 description 71
- 230000007246 mechanism Effects 0.000 description 46
- 229910052594 sapphire Inorganic materials 0.000 description 40
- 239000010980 sapphire Substances 0.000 description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 16
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- 239000011148 porous material Substances 0.000 description 9
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- High Energy & Nuclear Physics (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Abstract
本發明之課題是提供一種可有效率地將單結晶基板之上表面研磨以形成所期望之厚度，且可在單結晶基板之上表面有效率地進行散佈而形成複數個凹部的單結晶基板之加工方法。解決手段為一種單結晶基板之加工方法，其包含：數值孔徑設定步驟，將用以供脈衝雷射光線聚光之聚光透鏡的數值孔徑(NA)相對於單結晶基板設定成預定值；屏護通孔形成步驟，將脈衝雷射光線之聚光點從單結晶基板的上表面定位到預定位置以照射脈衝雷射光線，而從單結晶基板之上表面使細孔和屏護該細孔之非晶質成長以形成屏護通孔；以及非晶質去除步驟，以研磨材料對形成於單結晶基板上之屏護通孔進行研磨以去除非晶質。 An object of the present invention is to provide a single crystal substrate capable of efficiently polishing a surface of a single crystal substrate to form a desired thickness and efficiently dispersing a surface of a single crystal substrate to form a plurality of concave portions. processing methods. The solution is a method for processing a single crystal substrate, comprising: a numerical aperture setting step of setting a numerical aperture (NA) of a collecting lens for collecting laser light to a predetermined value with respect to a single crystal substrate; a protective via forming step of positioning a focused spot of the pulsed laser light from a top surface of the single crystal substrate to a predetermined position to illuminate the pulsed laser beam, and the fine hole and the screen are protected from the upper surface of the single crystal substrate The crystal growth is performed to form a screen protector through hole; and the amorphous removal step is performed by grinding the screen protection via hole formed on the single crystal substrate with an abrasive material to remove the amorphous material.
Description
本發明是有關於對藍寶石(Al2O3)基板、碳化矽(SiC)基板、氮化鎵(GaN)基板等單結晶基板施行加工之單結晶基板之加工方法。 The present invention relates to a method for processing a single crystal substrate on which a single crystal substrate such as a sapphire (Al 2 O 3 ) substrate, a tantalum carbide (SiC) substrate, or a gallium nitride (GaN) substrate is processed.
在光器件製造步驟中，是在藍寶石(Al2O3)基板、碳化矽(SiC)基板、氮化鎵(GaN)基板的表面積層由n型氮化物半導體層及p型氮化物半導體層所形成的光器件層，並在形成為格子狀之複數條分割預定線所劃分出的複數個區域中形成發光二極體、雷射二極體等光器件而構成光器件晶圓。並且，可藉由沿著分割預定線照射雷射光線以切斷光器件晶圓之作法將形成有光器件的區域分割以製造出一個個光器件。 In the optical device manufacturing step, the surface area layer of the sapphire (Al 2 O 3 ) substrate, the tantalum carbide (SiC) substrate, or the gallium nitride (GaN) substrate is composed of an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The optical device layer is formed, and an optical device such as a light-emitting diode or a laser diode is formed in a plurality of regions defined by a plurality of predetermined dividing lines formed in a lattice shape to constitute an optical device wafer. Further, the region in which the optical device is formed can be divided to fabricate the optical devices by irradiating the laser light along the dividing line to cut the optical device wafer.
作為分割上述之光器件晶圓等之晶圓的方法，以下的方法也正在被嘗試中：使用對被加工物具有穿透性之波長的脈衝雷射光線，將聚光點對準用來分割的區域之內部而照射脈衝雷射光線的雷射加工方法。使用了這個雷射加工方法的分割方法，其技術如下：從晶圓其中一方之面 側使聚光點對準內部而照射對晶圓具有穿透性之波長的脈衝雷射光線，並沿著分割預定線在被加工物內部連續地形成改質層，並對藉由形成此改質層而使強度降低了的切割道(street)施加外力，以分割晶圓(參照例如，專利文獻1)。 As a method of dividing a wafer of the above-described optical device wafer or the like, the following method is also being attempted: using a pulsed laser beam having a wavelength that is transparent to a workpiece, and aligning the focused spot for division A laser processing method that illuminates a pulsed laser beam inside the area. The segmentation method using this laser processing method is as follows: from one side of the wafer The side aligns the condensed spot to the inside to illuminate the pulsed laser light having a wavelength that is transparent to the wafer, and continuously forms a modified layer inside the workpiece along the dividing line, and forms a modified layer by An outer layer is applied to the slab whose strength is reduced by the mass layer to divide the wafer (see, for example, Patent Document 1).
又，作為沿著分割預定線分割半導體晶圓或光器件晶圓等之晶圓的方法，藉由沿著分割預定線照射對晶圓具有吸收性之波長的脈衝雷射光線以施行燒蝕加工而形成雷射加工溝，再沿著形成有成為其破斷起點之雷射加工溝的分割預定線賦予外力以進行割斷的技術已經被實用化(參照例如，專利文獻2)。 Further, as a method of dividing a wafer such as a semiconductor wafer or an optical device wafer along a predetermined dividing line, ablation processing is performed by irradiating a pulsed laser beam having an absorptive wavelength to the wafer along a dividing line. In addition, a technique of forming a laser processing groove and applying an external force to the cutting line along the line to be formed which is the starting point of the breaking process has been put into practical use (see, for example, Patent Document 2).
專利文獻1：日本專利第3408805號公報 Patent Document 1: Japanese Patent No. 3408805
專利文獻2：日本專利特開平10-305420號公報 Patent Document 2: Japanese Patent Laid-Open No. Hei 10-305420
然而，以上述任一種加工方法所分割成的光器件中，都會有改質層等之污渣或碎片殘留在外周面而使光器件的亮度降低的問題。 However, in the optical device which is divided by any of the above-described processing methods, there is a problem that dirt or debris such as a modified layer remains on the outer peripheral surface to lower the luminance of the optical device.
又，藍寶石(Al2O3)基板、碳化矽(SiC)基板、氮化鎵(GaN)基板等單結晶基板都是難切削材料，會有下列問題：要研磨單結晶基板之上表面以形成所期望之厚度，或為了提升光器件的亮度而在單結晶基板的上表面將複數個凹部散佈 而形成之作法都是困難的。 Further, a single crystal substrate such as a sapphire (Al 2 O 3 ) substrate, a tantalum carbide (SiC) substrate, or a gallium nitride (GaN) substrate is a difficult-to-cut material, and has the following problem: the upper surface of the single crystal substrate is polished to form It is difficult to form a desired thickness or to spread a plurality of concave portions on the upper surface of the single crystal substrate in order to increase the brightness of the optical device.
本發明是有鑒於上述事實而作成的，其主要技術課題為提供一種可以研磨單結晶基板之上表面而有效率地形成所期望之厚度的單結晶基板之加工方法。 The present invention has been made in view of the above circumstances, and a main technical object thereof is to provide a method for processing a single crystal substrate which can efficiently form a desired thickness by polishing a surface of a single crystal substrate.
又，其他之技術課題為提供一種可在單結晶基板之表面上有效率地將複數個凹部散佈而形成的單結晶基板之加工方法。 Further, another technical problem is to provide a method for processing a single crystal substrate which can be formed by efficiently spreading a plurality of concave portions on the surface of a single crystal substrate.
為解決上述的主要技術課題，根據本發明所提供的單結晶基板之加工方法，其特徵為，該單結晶基板之加工方法包含：數值孔徑設定步驟，將使脈衝雷射光線聚光之聚光透鏡的數值孔徑(NA)相對於單結晶基板設定成預定值；屏護通孔(Shield Tunnel)形成步驟，將脈衝雷射光線之聚光點從單結晶基板的上表面定位到預定位置並照射脈衝雷射光線，並從單結晶基板之上表面使細孔和屏護(Shield)該細孔之非晶質成長而形成屏護通孔；以及非晶質去除步驟，以研磨材料研磨形成於單結晶基板上之屏護通孔以去除非晶質。 In order to solve the above-mentioned main technical problems, a method for processing a single crystal substrate according to the present invention is characterized in that the method for processing the single crystal substrate comprises: a numerical aperture setting step for concentrating the pulsed laser light The numerical aperture (NA) of the lens is set to a predetermined value with respect to the single crystal substrate; a Shield Tunnel forming step is performed to position the focused spot of the pulsed laser light from the upper surface of the single crystal substrate to a predetermined position and illuminate Pulsed laser light, and pores and Shields are grown from the upper surface of the single crystal substrate to form a screen protection through hole; and an amorphous removal step is performed by grinding the abrasive material to form a single crystal A through-hole is shielded on the substrate to remove amorphous.
在上述數值孔徑設定步驟中設定為預定值之聚光透鏡的數值孔徑(NA)，是設定成使除以單結晶基板之折射率(N)後之值在0.05~0.2的範圍。 The numerical aperture (NA) of the condensing lens set to a predetermined value in the numerical aperture setting step is set such that the value obtained by dividing the refractive index (N) of the single crystal substrate is in the range of 0.05 to 0.2.
在上述非晶質去除步驟中所使用的研磨材料，其硬度在單結晶基板的硬度以下。 The abrasive used in the above-described amorphous removal step has a hardness equal to or less than the hardness of the single crystal substrate.
再者，較理想的是，單結晶基板是藍寶石(Al2O3)基板、碳化矽(SiC)基板、氮化鎵(GaN)基板之任一種，且研磨材料是由藍寶石(Al2O3)、碳化矽(SiC)、氮化鎵(GaN)、矽酸鹽、石英所構成之任一種磨粒。 Furthermore, it is preferable that the single crystal substrate is any one of a sapphire (Al 2 O 3 ) substrate, a tantalum carbide (SiC) substrate, and a gallium nitride (GaN) substrate, and the abrasive material is made of sapphire (Al 2 O 3 ). Any one of abrasive grains composed of tantalum carbide (SiC), gallium nitride (GaN), niobate, and quartz.
上述屏護通孔形成步驟是沿著將單結晶基板分割成晶片的輪廓連接屏護通孔而形成，且上述非晶質去除步驟是研磨晶片的外周。 The screen protection via forming step is formed along the outline connecting screen protection vias for dividing the single crystal substrate into wafers, and the amorphous removal step is to polish the outer periphery of the wafer.
又，上述屏護通孔形成步驟是於單結晶基板之上表面以預定的深度連接屏護通孔而形成，且上述非晶質去除步驟是研磨單結晶基板的上表面而將單結晶基板形成為預定的厚度。 Moreover, the screen protecting via forming step is formed by connecting the screen protecting vias at a predetermined depth on the upper surface of the single crystal substrate, and the amorphous removing step is to polish the upper surface of the single crystal substrate to form a single crystal substrate. For a predetermined thickness.
此外，上述屏護通孔形成步驟是於單結晶基板的上表面將屏護通孔散佈在所期望的位置上而形成，且上述非晶質去除步驟是研磨單結晶基板而在單結晶基板上表面形成凹部。 In addition, the screen protection via forming step is formed by spreading the screen protection via at a desired position on the upper surface of the single crystal substrate, and the amorphous removal step is to polish the single crystal substrate on the single crystal substrate. The surface forms a recess.
根據本發明的單結晶基板之加工方法，因為包含以下步驟：數值孔徑設定步驟，將用以供脈衝雷射光線聚光之聚光透鏡的數值孔徑(NA)相對於單結晶基板設定成預定值；屏護通孔形成步驟，將脈衝雷射光線之聚光點從單結晶基板的上表面定位到預定位置以照射脈衝雷射光線，而從單結晶基板之上表面使細孔和屏護該細孔之非晶質成長以形成屏護通孔；以及非晶質去除步驟，以研磨材料對形成於單結晶基板上之屏護通孔進行研磨以去除非晶質。 因此，在屏護通孔形成步驟中構成形成在單結晶基板上之屏護通孔的非晶質是脆弱的，所以在非晶質去除步驟中所使用的研磨材料會使用由硬度在單結晶基板的硬度以下之材料所構成之磨粒來進行研磨，而可以輕易地僅將非晶質去除。因此，可以有效率地實施以下的研磨：沿著形成於單結晶基板上之屏護通孔而被分割好的晶片之分割面的研磨、為了將單結晶基板形成為預定厚度而於單結晶基板之上表面側所形成的屏護通孔層的研磨，以及散佈形成於單結晶基板之上表面側的屏護通孔的研磨。 The method for processing a single crystal substrate according to the present invention comprises the following steps: a numerical aperture setting step of setting a numerical aperture (NA) of a collecting lens for collecting laser light to a predetermined value with respect to a single crystal substrate a screen protection through hole forming step of positioning a focused spot of the pulsed laser light from a top surface of the single crystal substrate to a predetermined position to illuminate the pulsed laser beam, and the fine hole and the screen are protected from the upper surface of the single crystal substrate The amorphous material is grown to form a screen protector through hole; and the amorphous removal step is performed by grinding the screen protection via hole formed on the single crystal substrate with an abrasive material to remove the amorphous material. Therefore, the amorphous material forming the screen protective via formed on the single crystal substrate in the screen protective via forming step is fragile, so the abrasive used in the amorphous removal step is used in the single crystal by hardness. The abrasive grains composed of the material having a hardness equal to or less than the hardness of the substrate are polished, and the amorphous material can be easily removed. Therefore, the following polishing can be efficiently performed: polishing of the divided faces of the divided wafers along the shield via holes formed on the single crystal substrate, and forming the single crystal substrate into a predetermined thickness to form a single crystal substrate The polishing of the screen-protecting via layer formed on the upper surface side and the polishing of the screen-protecting via formed on the upper surface side of the single crystal substrate.
2‧‧‧光器件晶圓 2‧‧‧Optical device wafer
2a‧‧‧表面 2a‧‧‧ surface
2b‧‧‧背面 2b‧‧‧back
21‧‧‧光器件 21‧‧‧Optical devices
22‧‧‧分割預定線 22‧‧‧Division line
23‧‧‧屏護通孔 23‧‧‧ Screen Protected Through Hole
231‧‧‧細孔 231‧‧‧Pore
232‧‧‧非晶質 232‧‧‧Amorphous
3‧‧‧環狀框架 3‧‧‧Ring frame
30‧‧‧切割膠帶 30‧‧‧Cut Tape
4‧‧‧雷射加工裝置 4‧‧‧ Laser processing equipment
41、61‧‧‧工作夾台 41, 61‧‧‧Working table
42‧‧‧雷射光線照射機構 42‧‧‧Laser light irradiation mechanism
421‧‧‧套管 421‧‧‧ casing
422‧‧‧聚光器 422‧‧‧ concentrator
422a‧‧‧聚光透鏡 422a‧‧‧ Condenser lens
43‧‧‧攝像機構 43‧‧‧ camera organization
5‧‧‧分割裝置 5‧‧‧Splitting device
51‧‧‧框架保持機構 51‧‧‧Framekeeping agency
511‧‧‧框架保持構件 511‧‧‧Frame holding members
511a‧‧‧載置面 511a‧‧‧Loading surface
512‧‧‧夾具 512‧‧‧ fixture
52‧‧‧攝像機構 52‧‧‧ camera organization
521‧‧‧擴張圓筒 521‧‧‧Expansion cylinder
522‧‧‧支撐凸緣 522‧‧‧Support flange
523‧‧‧支撐機構 523‧‧‧Support institutions
523a‧‧‧汽缸 523a‧‧ ‧ cylinder
523b‧‧‧活塞桿 523b‧‧‧ piston rod
53‧‧‧拾取式夾頭 53‧‧‧ pick-up chuck
6‧‧‧砂紙(研磨裝置) 6‧‧‧ sandpaper (grinding device)
62‧‧‧研磨機構 62‧‧‧ grinding mechanism
621‧‧‧主軸殼體 621‧‧‧ spindle housing
622‧‧‧旋轉主軸 622‧‧‧Rotating spindle
623‧‧‧機座 623‧‧‧After
624‧‧‧研磨工具 624‧‧‧ grinding tools
625‧‧‧基台 625‧‧‧Abutment
626‧‧‧研磨墊 626‧‧‧ polishing pad
627‧‧‧連結螺栓 627‧‧‧Link bolt
10‧‧‧藍寶石基板 10‧‧‧Sapphire substrate
101‧‧‧凹部 101‧‧‧ recess
LB‧‧‧脈衝雷射光線 LB‧‧‧pulse laser light
P‧‧‧聚光點 P‧‧‧ spotlight
S‧‧‧間隔 S‧‧‧ interval
α、β‧‧‧角度 α, β‧‧‧ angle
X、Y、X1、61a、624a、624b‧‧‧箭頭 X, Y, X1, 61a, 624a, 624b‧‧‧ arrows
圖1是以本發明之單結晶基板之加工方法所加工之作為單結晶基板的光器件晶圓的立體圖。 1 is a perspective view of an optical device wafer processed as a single crystal substrate processed by the method for processing a single crystal substrate of the present invention.
圖2是顯示裝設在環狀框架上的切割膠帶上黏貼有圖1所示之光器件晶圓之狀態的立體圖。 Fig. 2 is a perspective view showing a state in which the optical device wafer shown in Fig. 1 is adhered to a dicing tape provided on an annular frame.
圖3是用以實施本發明之單結晶基板之加工方法中的屏護通孔形成步驟之雷射加工裝置的主要部位立體圖。 Fig. 3 is a perspective view showing the main part of a laser processing apparatus for performing a screen through hole forming step in the method for processing a single crystal substrate of the present invention.
圖4(a)~(e)是表示本發明之單結晶基板之加工方法中的屏護通孔形成步驟之第1實施形態的說明圖。 4(a) to 4(e) are explanatory views showing a first embodiment of a screen-protecting through-hole forming step in the method for processing a single crystal substrate of the present invention.
圖5是顯示聚光透鏡之數值孔徑(NA)、光器件晶圓之折射率(N)和將數值孔徑(NA)除以折射率(N)後之值(S=NA/N)之間的關係之圖。 Figure 5 is a graph showing the numerical aperture (NA) of the concentrating lens, the refractive index (N) of the optical device wafer, and the value (S = NA / N) after dividing the numerical aperture (NA) by the refractive index (N). Diagram of the relationship.
圖6是用於將藉由本發明之單結晶基板之加工方法而形成有屏護通孔之光器件晶圓分割為一個個光器件之分割裝置的立體圖。 Fig. 6 is a perspective view of a dividing device for dividing an optical device wafer having a screen protector through a processing method of a single crystal substrate of the present invention into individual optical devices.
圖7(a)~(c)是藉由圖6所示之分割裝置所實施之晶圓分割步驟的說明圖。 7(a) to 7(c) are explanatory views of a wafer dividing step performed by the dividing device shown in Fig. 6.
圖8是藉由圖7所示之晶圓分割步驟而分割為一個個的光器件之立體圖。 Fig. 8 is a perspective view of an optical device divided into individual pieces by the wafer dividing step shown in Fig. 7.
圖9(a)、(b)是表示本發明之單結晶基板之加工方法中的非晶質去除步驟之第1實施形態的說明圖。 (a) and (b) of FIG. 9 are explanatory views showing a first embodiment of an amorphous removal step in the method for processing a single crystal substrate of the present invention.
圖10是以本發明之單結晶基板之加工方法所加工之作為單結晶基板的藍寶石基板的立體圖。 Fig. 10 is a perspective view showing a sapphire substrate processed as a single crystal substrate processed by the method for processing a single crystal substrate of the present invention.
圖11是表示本發明之單結晶基板之加工方法中的屏護通孔形成步驟之第2實施形態的說明圖。 Fig. 11 is an explanatory view showing a second embodiment of the step of forming a screen through hole in the method for processing a single crystal substrate of the present invention.
圖12(a)~(c)是顯示本發明之單結晶基板之加工方法中的非晶質去除步驟之第2實施形態的說明圖。 Figs. 12(a) to 12(c) are explanatory views showing a second embodiment of the amorphous removal step in the method for processing a single crystal substrate of the present invention.
圖13(a)、(b)是表示本發明之單結晶基板之加工方法中的屏護通孔形成步驟之第3實施形態的說明圖。 (a) and (b) of FIG. 13 are explanatory views showing a third embodiment of the step of forming a screen through hole in the method for processing a single crystal substrate of the present invention.
以下，將參照附加之圖式，針對本發明之單結晶基板之加工方法，作更詳細的說明。 Hereinafter, a method of processing a single crystal substrate of the present invention will be described in more detail with reference to the accompanying drawings.
圖1中所示為以本發明之雷射加工方法所加工之作為單結晶基板的光器件晶圓的立體圖。圖1所示之光器件晶圓2，是將發光二極體、雷射二極體等光器件21在厚度為300μm的藍寶石基板之表面2a上形成為矩陣狀。並且，以形成為格子狀之分割預定線22劃分各光器件21。 1 is a perspective view of an optical device wafer processed as a single crystal substrate by the laser processing method of the present invention. In the optical device wafer 2 shown in FIG. 1, the optical device 21 such as a light-emitting diode or a laser diode is formed in a matrix on the surface 2a of a sapphire substrate having a thickness of 300 μm. Further, each of the optical devices 21 is divided by a predetermined dividing line 22 formed in a lattice shape.
參照圖3至圖9，說明對作為上述之單結晶基板之 光器件晶圓2進行加工的單結晶基板之加工方法的第1實施形態。 Referring to FIG. 3 to FIG. 9, a description will be given of the single crystal substrate as the above. The first embodiment of the method for processing a single crystal substrate in which the optical device wafer 2 is processed.
首先，實施將光器件晶圓2黏貼於裝設在環狀框架上之切割膠帶的表面的晶圓支撐步驟。亦即，如圖2所示，將光器件晶圓2的背面2b黏貼於切割膠帶30的表面，且該切割膠帶30是以覆蓋環狀框架3之內側開口部的方式裝設外周部。如此一來，黏貼在切割膠帶30的表面上的光器件晶圓2，就會成為表面2a在上側。 First, a wafer supporting step of adhering the optical device wafer 2 to the surface of the dicing tape mounted on the annular frame is carried out. That is, as shown in FIG. 2, the back surface 2b of the optical device wafer 2 is adhered to the surface of the dicing tape 30, and the dicing tape 30 is provided with the outer peripheral portion so as to cover the inner opening portion of the annular frame 3. As a result, the optical device wafer 2 adhered to the surface of the dicing tape 30 becomes the upper side of the surface 2a.
圖3中所示為沿著已實施過上述晶圓支撐步驟之光器件晶圓2的分割預定線22施行雷射加工之雷射加工裝置。圖3所示之雷射加工裝置4具備有保持被加工物的工作夾台41、對保持於該工作夾台41上之被加工物照射雷射光線的雷射光線照射機構42，以及對保持於工作夾台41上之被加工物進行拍攝的攝像機構43。工作夾台41是構成為可吸引保持被加工物，並形成為可藉由圖未示之加工進給機構使其在圖3中以箭頭X所示之加工進給方向上移動，並且可藉由圖未示之分度進給機構使其在圖3中以箭頭Y所示之分度進給方向上移動。 A laser processing apparatus for performing laser processing along the dividing line 22 of the optical device wafer 2 on which the wafer supporting step has been performed is shown in FIG. The laser processing apparatus 4 shown in FIG. 3 is provided with a working chuck 41 for holding a workpiece, and a laser beam irradiation mechanism 42 for irradiating a laser beam to a workpiece held on the work chuck 41, and for holding An image pickup mechanism 43 that photographs a workpiece on the work chuck 41. The working chuck 41 is configured to attract and hold the workpiece, and is formed to be movable in the processing feed direction indicated by an arrow X in FIG. 3 by a processing feed mechanism not shown, and can be borrowed The indexing feed mechanism, not shown, moves it in the indexing feed direction indicated by the arrow Y in Fig. 3.
上述雷射光線照射機構42包含實質上配置成水平之圓筒形狀的套管(casing)421。套管421內配置有圖未示之脈衝雷射光線振盪機構，該脈衝雷射光線振盪機構包括了脈衝雷射光線振盪器和重複頻率設定機構。在上述套管421的前端部裝設有聚光器422，該聚光器422包括有用於將從脈衝雷射光線振盪機構所振盪發出的脈衝雷射光線聚光 之聚光透鏡422a。此聚光器422之聚光透鏡422a，是將數值孔徑(NA)設定如下。亦即，是將聚光透鏡422a之數值孔徑(NA)設定成使數值孔徑(NA)除以單結晶基板之折射率(N)後之值在0.05~0.2的範圍(數值孔徑設定步驟)。再者，雷射光線照射機構42包括有用於調整透過聚光器422的聚光透鏡422a而被聚光之脈衝雷射光線的聚光點位置的聚光點位置調整機構(圖未示)。 The above-described laser beam irradiation mechanism 42 includes a casing 421 which is substantially arranged in a horizontal cylindrical shape. A pulsed laser ray oscillating mechanism, not shown, is disposed in the sleeve 421. The pulsed laser ray oscillating mechanism includes a pulsed laser ray oscillator and a repetition frequency setting mechanism. A concentrator 422 is disposed at a front end portion of the sleeve 421, and the concentrator 422 includes a concentrating pulse laser light oscillated from a pulsed laser oscillating mechanism. Condenser lens 422a. The condensing lens 422a of the concentrator 422 sets the numerical aperture (NA) as follows. That is, the numerical aperture (NA) of the condensing lens 422a is set such that the value of the numerical aperture (NA) divided by the refractive index (N) of the single crystal substrate is in the range of 0.05 to 0.2 (numerical aperture setting step). Further, the laser beam irradiation unit 42 includes a condensed spot position adjustment mechanism (not shown) for adjusting the position of the condensed point of the pulsed laser beam condensed by the condensing lens 422a of the concentrator 422.
裝設於構成上述雷射光線照射機構42之套管421之前端部的攝像機構43，除了以可見光進行拍攝之一般攝像元件(CCD)之外，還可以由用於對被加工物照射紅外線之紅外線照明機構、用於捕捉藉由該紅外線照明機構所照射之紅外線的光學系統，以及將對應於藉由該光學系統所捕捉到之紅外線的電氣信號輸出的攝像元件(紅外線CCD)等所構成，並將拍攝到的影像信號傳送至圖未示的控制機構。 The imaging unit 43 installed at the front end of the sleeve 421 constituting the laser beam irradiation unit 42 may be used to irradiate the workpiece with infrared rays in addition to a general imaging element (CCD) that images with visible light. An infrared illuminating mechanism, an optical system for capturing infrared rays irradiated by the infrared illuminating means, and an imaging element (infrared CCD) for outputting an electric signal corresponding to infrared rays captured by the optical system, The captured image signal is transmitted to a control mechanism not shown.
要使用上述之雷射加工裝置4，沿著已實施過上述晶圓支撐步驟之光器件晶圓2的分割預定線22施行雷射加工時，會實施將聚光透鏡和單結晶基板相對地在光軸方向上定位的定位步驟，以將脈衝雷射光線的聚光點定位在作為單結晶基板之光器件晶圓2的厚度方向的所期望的位置上。 When the laser processing apparatus 4 described above is used to perform laser processing along the planned dividing line 22 of the optical device wafer 2 on which the wafer supporting step has been performed, the condensing lens and the single crystal substrate are opposed to each other. The positioning step of positioning in the optical axis direction is to position the condensed spot of the pulsed laser light at a desired position in the thickness direction of the optical device wafer 2 as a single crystal substrate.
首先，是將黏貼有光器件晶圓2之切割膠帶30側載置於上述圖3所示之雷射加工裝置4的工作夾台41上。然後，藉由將圖未示之吸引機構作動，以透過切割膠帶30將光器件 晶圓2保持於工作夾台41上(晶圓保持步驟)。因此，保持於工作夾台41上之光器件晶圓2會形成表面2a在上側。再者，在圖3中雖然是將裝設有切割膠帶30之環狀框架3省略而顯示，但環狀框架3將受到配置於工作夾台41上之適當的框架保持機構所保持。如此進行而吸引保持了光器件晶圓2的工作夾台41可透過圖未示之加工進給機構被定位到攝像機構43的正下方。 First, the side of the dicing tape 30 to which the optical device wafer 2 is pasted is placed on the work chuck 41 of the laser processing apparatus 4 shown in Fig. 3 described above. Then, the optical device is passed through the dicing tape 30 by actuating a suction mechanism not shown. The wafer 2 is held on the work chuck 41 (wafer holding step). Therefore, the optical device wafer 2 held on the working chuck 41 forms the surface 2a on the upper side. Further, in FIG. 3, the annular frame 3 on which the dicing tape 30 is attached is omitted, and the annular frame 3 is held by an appropriate frame holding mechanism disposed on the working table 41. The work chuck 41 thus sucked and held by the optical device wafer 2 can be positioned directly below the image pickup mechanism 43 through a processing feed mechanism (not shown).
當將工作夾台41定位於攝像機構43的正下方時，即可實行校準(aligment)作業，以藉由攝像機構43及圖未示之控制機構檢測光器件晶圓2的用來雷射加工之加工區域。亦即，攝像機構43及圖未示之控制機構可實行用於對形成於光器件晶圓2之預定方向上的分割預定線22，與沿著分割預定線22照射雷射光線的雷射光線照射機構42的聚光器422進行位置對準的型樣匹配(pattern matching)等之影像處理，而完成雷射光線照射位置的校準(校準步驟)。又，對於光器件晶圓2上之與上述預定方向垂直相交的方向上所形成的分割預定線22，也是同樣地完成雷射光線照射位置的校準。 When the working chuck 41 is positioned directly below the camera mechanism 43, an algment operation can be performed to detect the laser wafer 2 for laser processing by the camera mechanism 43 and a control mechanism not shown. Processing area. That is, the imaging unit 43 and the control unit (not shown) can perform the divisional line 22 for the predetermined direction formed in the optical device wafer 2, and the laser beam for irradiating the laser beam along the division line 22 The concentrator 422 of the illuminating mechanism 42 performs image processing such as position matching pattern matching, and completes calibration of the laser beam irradiation position (calibration step). Further, the alignment of the laser beam irradiation position is similarly performed on the division planned line 22 formed in the direction perpendicular to the predetermined direction on the optical device wafer 2.
當實施了上述校準步驟後，如圖4所示，就可將工作夾台41移動至照射雷射光線之雷射光線照射機構42之聚光器422所在的雷射光線照射區域，並將預定之分割預定線22定位於聚光器422的正下方。此時，是如圖4(a)所示地將光器件晶圓2定位成使分割預定線22的一端(圖4(a)中為左端)位於聚光器422的正下方。然後，作動圖未示之聚光 點位置調整機構使聚光器422在光軸方向上移動，以將藉由聚光器422的聚光透鏡422a所聚光之脈衝雷射光線LB的聚光點P定位到作為單結晶基板之光器件晶圓2之厚度方向的所期望的位置上(定位步驟)。再者，在圖示之實施形態中，是將脈衝雷射光線的聚光點P設定在距離光器件晶圓2之供脈衝雷射光線入射之上表面(表面2a側)所期望的位置處(例如距離表面2a為5~10μm之背面2b側的位置)。 After the above calibration step is performed, as shown in FIG. 4, the working chuck 41 can be moved to the laser light irradiation area where the concentrator 422 of the laser beam irradiation mechanism 42 for irradiating the laser light is placed, and the predetermined The dividing line 22 is positioned directly below the concentrator 422. At this time, the optical device wafer 2 is positioned such that one end (the left end in FIG. 4(a)) of the division planned line 22 is located directly below the concentrator 422 as shown in FIG. 4(a). Then, the action picture is not shown The dot position adjustment mechanism moves the concentrator 422 in the optical axis direction to position the condensed spot P of the pulsed laser beam LB condensed by the condensing lens 422a of the concentrator 422 to be a single crystal substrate. The desired position of the thickness direction of the optical device wafer 2 (positioning step). Further, in the illustrated embodiment, the condensed spot P of the pulsed laser light is set at a desired position from the upper surface (surface 2a side) on which the pulsed laser light is incident on the optical device wafer 2. (For example, the position on the back side 2b side of the surface 2a is 5 to 10 μm).
如上述地實施了定位步驟後，就可以實施屏護通孔形成步驟，其為作動雷射光線照射機構42而從聚光器422照射脈衝雷射光線LB，以使其從已定位在光器件晶圓2之聚光點P附近(上表面(表面2a))朝向底面(背面2b)形成細孔和屏護該細孔之非晶質而形成屏護通孔。亦即，從聚光器422照射對構成光器件晶圓2的藍寶石基板具有穿透性之波長的脈衝雷射光線LB，並使工作夾台41在圖4(a)中朝箭頭X1所示之方向以預定之進給速度移動(屏護通孔形成步驟)。然後，如圖4(b)所示，當分割預定線22的另一端(在圖4(a)中為右端)到達雷射光線照射機構42之聚光器422的照射位置時，即停止脈衝雷射光線的照射，同時停止工作夾台41的移動。 After the positioning step is performed as described above, a screen through hole forming step of illuminating the pulsed laser beam LB from the concentrator 422 to actuate the optical device from the illuminator 422 is performed. The vicinity of the condensing point P of the wafer 2 (the upper surface (surface 2a)) forms fine pores toward the bottom surface (back surface 2b) and shields the pores from the amorphous material to form a screen-protecting through-hole. That is, the pulsed laser beam LB having a wavelength penetrating the sapphire substrate constituting the optical device wafer 2 is irradiated from the concentrator 422, and the working chuck 41 is shown by an arrow X1 in Fig. 4(a). The direction is moved at a predetermined feed speed (screen protection through hole forming step). Then, as shown in FIG. 4(b), when the other end of the division planned line 22 (the right end in FIG. 4(a)) reaches the irradiation position of the concentrator 422 of the laser beam irradiation mechanism 42, the pulse is stopped. The irradiation of the laser light stops the movement of the working chuck 41 at the same time.
藉由實施上述屏護通孔形成步驟，可在光器件晶圓2的內部，如圖4(c)所示地從脈衝雷射光線LB之聚光點P附近(上表面(表面2a))朝底面(背面2b)使細孔231和形成於該細孔231之周圍的非晶質232成長，並沿著分割預定線22以預定的間隔(在圖示之實施形態中為16μm的間隔(加工 進給速度：800mm/秒)/(重複頻率：50kHz))形成非晶質的屏護通孔23。此屏護通孔23，如圖4(d)及(e)所示，是由形成於中心之直徑為φ 1μm左右之細孔231和形成於該細孔231周圍之直徑為φ 16μm之非晶質232所構成，且在圖示之實施形態中是成為以下的形態：將互相鄰接之非晶質232形成為彼此連接。再者，上述之屏護通孔形成步驟中所形成之非晶質的屏護通孔23，因為可以從光器件晶圓2的上表面(表面2a)涵蓋到底面(背面2b)而形成，因此即使晶圓的厚度厚，也只需要照射1次脈衝雷射光線即可，故可使生產性變得極為良好。又，因為在屏護通孔形成步驟中碎片不會飛散，因此也可以解決使器件的品質降低的問題。 By performing the above-described screen through hole forming step, it is possible to be in the vicinity of the light collecting point P of the pulsed laser beam LB (upper surface (surface 2a)) as shown in FIG. 4(c) inside the optical device wafer 2. The pores 231 and the amorphous 232 formed around the pores 231 are grown toward the bottom surface (back surface 2b), and are spaced apart along the dividing line 22 at predetermined intervals (in the illustrated embodiment, the interval is 16 μm ( machining Feed rate: 800 mm/sec) / (repetition frequency: 50 kHz)) An amorphous screen protector 23 was formed. As shown in Figs. 4(d) and 4(e), the screen protection through hole 23 is formed by a fine hole 231 having a diameter of about 1 μm formed at the center and a diameter of φ 16 μm formed around the fine hole 231. The crystal 232 is configured, and in the illustrated embodiment, the amorphous 232 adjacent to each other is formed to be connected to each other. Furthermore, the amorphous shield via 23 formed in the above-described screen via forming step can be formed from the upper surface (surface 2a) of the optical device wafer 2 to the bottom surface (back surface 2b). Therefore, even if the thickness of the wafer is thick, it is only necessary to irradiate the pulsed laser light once, so that the productivity can be extremely excellent. Further, since the chips do not scatter during the screen through hole forming step, the problem of lowering the quality of the device can be solved.
如上述地沿著預定之分割預定線22實施上述屏護通孔形成步驟後，就可以使工作夾台41在以箭頭Y所示的方向上僅分度移動形成於光器件晶圓2上之分割預定線22的間隔(分度步驟)，以執行上述屏護通孔形成步驟。如此進行，而沿著形成在預定方向上之所有分割預定線22均實施了上述屏護通孔形成步驟後，就可以使工作夾台41旋轉90度，以沿著相對於上述預定方向上所形成之分割預定線22為直交的方向上延伸之分割預定線22實行上述屏護通孔形成步驟。 After the above-described screen through hole forming step is performed along the predetermined dividing line 22 as described above, the working chuck 41 can be formed on the optical device wafer 2 by only indexing movement in the direction indicated by the arrow Y. The interval of the predetermined line 22 (indexing step) is divided to perform the above-described screen through hole forming step. By performing the above-described screen-protecting through-hole forming step along all the predetermined dividing lines 22 formed in the predetermined direction, the working chuck 41 can be rotated by 90 degrees to be along with respect to the predetermined direction. The divided dividing line 22 formed is a predetermined dividing line 22 extending in the direction orthogonal to the above-described screen protecting through hole forming step.
再者，在上述之實施形態中，雖然所舉出的例子是做成讓光器件晶圓2之表面2a在上側而保持在工作夾台41上，並從光器件晶圓2的表面2a側沿著分割預定線22照射脈衝雷射光線而形成屏護通孔23，但也可以做成讓光器件晶圓2 的背面在上側而保持在工作夾台41上，並從光器件晶圓2的背面側沿著分割預定線22照射脈衝雷射光線而形成屏護通孔23。 Further, in the above-described embodiment, the example is such that the surface 2a of the optical device wafer 2 is held on the upper surface of the optical device wafer 2 from the surface 2a side of the optical device wafer 2. The pulsed laser beam is irradiated along the dividing line 22 to form the screen through hole 23, but may also be made to allow the optical device wafer 2 The back surface is held on the upper stage on the working chuck 41, and the pulsed laser beam is irradiated from the back side of the optical device wafer 2 along the dividing line 22 to form the screen through hole 23.
在上述的屏護通孔形成步驟中，為了要形成良好的屏護通孔23，重要的是如上述地將聚光透鏡422a之數值孔徑(NA)，設定成使數值孔徑(NA)除以單結晶基板之折射率(N)後之值(S)在0.05~0.2的範圍。 In the above-described screen protecting through hole forming step, in order to form a good screen through hole 23, it is important to set the numerical aperture (NA) of the collecting lens 422a to divide the numerical aperture (NA) as described above. The value (S) after the refractive index (N) of the single crystal substrate is in the range of 0.05 to 0.2.
此處，針對數值孔徑(NA)、折射率(N)和將數值孔徑(NA)除以折射率(N)後之值(S=NA/N)的關係，參照圖5進行說明。圖5中，是將入射至聚光透鏡422a之脈衝雷射光線LB以相對於光軸形成角度(α)進行聚光。此時，sin α為聚光透鏡422a之數值孔徑(NA)(NA=sin θ)。當將透過聚光透鏡422a而被聚光之脈衝雷射光線LB照射至由單結晶基板所構成之光器件晶圓2上時，因為構成光器件晶圓2之單結晶基板之密度比空氣還高，所以脈衝雷射光線LB會由角度(α)折射成角度(β)。此時，相對於光軸的角度(β)，會因為構成光器件晶圓2之單結晶基板的折射率(N)而改變。因為折射率(N)是(N=sin α/sin β)，所以將數值孔徑(NA)除以單結晶基板之折射率(N)後之值(S=NA/N)會成為sin β。因此，將sin β設定在0.05~0.2的範圍(0.05≦sin β≦0.2)是很重要的。 Here, the relationship between the numerical aperture (NA), the refractive index (N), and the value (S=NA/N) obtained by dividing the numerical aperture (NA) by the refractive index (N) will be described with reference to FIG. 5. In Fig. 5, the pulsed laser beam LB incident on the collecting lens 422a is condensed at an angle (α) with respect to the optical axis. At this time, sin α is the numerical aperture (NA) (NA = sin θ) of the condensing lens 422a. When the pulsed laser light LB collected by the condensing lens 422a is irradiated onto the optical device wafer 2 composed of the single crystal substrate, since the density of the single crystal substrate constituting the optical device wafer 2 is higher than that of the air High, so the pulsed laser ray LB is refracted by the angle (α) to an angle (β). At this time, the angle (β) with respect to the optical axis changes due to the refractive index (N) of the single crystal substrate constituting the optical device wafer 2. Since the refractive index (N) is (N=sin α/sin β), the value (S=NA/N) obtained by dividing the numerical aperture (NA) by the refractive index (N) of the single crystal substrate becomes sin β. Therefore, it is important to set sin β in the range of 0.05 to 0.2 (0.05 ≦ sin β ≦ 0.2).
以下，說明將聚光透鏡422a的數值孔徑(NA)除以單結晶基板之折射率(N)後之值(S=NA/N)設定在0.05~0.2的範圍之理由。 Hereinafter, the reason why the numerical aperture (NA) of the condensing lens 422a is divided by the refractive index (N) of the single crystal substrate (S=NA/N) is set in the range of 0.05 to 0.2 will be described.
[實驗1-1] [Experiment 1-1]
將厚度1000μm的藍寶石(Al2O3)基板(折射率：1.7)以下列的加工條件形成屏護通孔，並判定屏護通孔之良窳。 A sapphire (Al 2 O 3 ) substrate (refractive index: 1.7) having a thickness of 1000 μm was formed into a screen protector through the following processing conditions, and the goodness of the screen through hole was determined.
加工條件 Processing conditions
如以上所述，在藍寶石基板(折射率：1.7)中，是藉由將供脈衝雷射光線聚光之聚光透鏡422a的數值孔徑(NA)設 定成使數值孔徑(NA)除以單結晶基板之折射率(N)後之值(S=NA/N)在0.05~0.2的範圍，而形成屏護通孔。因此，在藍寶石基板(折射率：1.7)中，將供脈衝雷射光線聚光之聚光透鏡422a的數值孔徑(NA)設定在0.1~0.35是很重要的。 As described above, in the sapphire substrate (refractive index: 1.7), the numerical aperture (NA) of the condensing lens 422a for concentrating the pulsed laser light is set. The value of the numerical aperture (NA) divided by the refractive index (N) of the single crystal substrate (S=NA/N) is set to be in the range of 0.05 to 0.2 to form a screen protector. Therefore, in the sapphire substrate (refractive index: 1.7), it is important to set the numerical aperture (NA) of the condensing lens 422a for concentrating the pulsed laser light to 0.1 to 0.35.
[實驗1-2] [Experiment 1-2]
將厚度1000μm的碳化矽(SiC)基板(折射率：2.63)以下列的加工條件形成屏護通孔，並判定屏護通孔之良窳。 A lanthanum carbide (SiC) substrate (refractive index: 2.63) having a thickness of 1000 μm was formed into a screen-protecting via hole under the following processing conditions, and the goodness of the screen-protecting through-hole was determined.
加工條件 Processing conditions
如以上所述，在碳化矽(SiC)基板(折射率：2.63)中，是藉由將供脈衝雷射光線聚光之聚光透鏡422a的數值孔徑(NA)除以單結晶基板之折射率(N)後之值(S=NA/N)設定在0.05~0.2的範圍，而形成屏護通孔。因此，在碳化矽(SiC)基板中，要將供脈衝雷射光線聚光之聚光透鏡422a的數值孔徑(NA)設定在0.15~0.55是很重要的。 As described above, in the tantalum carbide (SiC) substrate (refractive index: 2.63), the numerical aperture (NA) of the collecting lens 422a for collecting the pulsed laser light is divided by the refractive index of the single crystal substrate. The value after (N) (S=NA/N) is set in the range of 0.05 to 0.2 to form a screen through hole. Therefore, in the tantalum carbide (SiC) substrate, it is important to set the numerical aperture (NA) of the collecting lens 422a for collecting the pulsed laser light to 0.15 to 0.55.
[實驗1-3] [Experiment 1-3]
將厚度1000μm的氮化鎵(GaN)基板(折射率：2.3)以下列的加工條件形成屏護通孔，並判定屏護通孔之良窳。 A gallium nitride (GaN) substrate (refractive index: 2.3) having a thickness of 1000 μm was formed into a screen-protecting via hole under the following processing conditions, and the goodness of the screen-protecting through-hole was determined.
加工條件 Processing conditions
如以上所述，在氮化鎵(GaN)基板中，是藉由將供脈衝雷射光線聚光之聚光透鏡422a的數值孔徑(NA)除以單結晶基板之折射率(N)後之值(S=NA/N)設定在0.05~0.2的範圍，而形成屏護通孔。因此，在氮化鎵(GaN)基板中，將供脈衝雷射光線聚光之聚光透鏡422a的數值孔徑(NA)設定在0.1~0.5是很重要的。 As described above, in the gallium nitride (GaN) substrate, the numerical aperture (NA) of the collecting lens 422a for collecting the pulsed laser light is divided by the refractive index (N) of the single crystal substrate. The value (S=NA/N) is set in the range of 0.05 to 0.2 to form a screen through hole. Therefore, in a gallium nitride (GaN) substrate, it is important to set the numerical aperture (NA) of the collecting lens 422a for collecting the pulsed laser light to 0.1 to 0.5.
再者，因為屏護通孔是從聚光點P形成到照射雷射光線之側，因此必須將脈衝雷射光線之聚光點定位在和脈衝雷射光線入射之側為相反側之面鄰接的內側。 Furthermore, since the screen protector through hole is formed from the condensed spot P to the side that illuminates the laser beam, the condensed spot of the pulsed laser ray must be positioned adjacent to the side opposite to the side on which the pulsed laser ray is incident. The inside.
由上述之實驗1-1、實驗1-2、實驗1-3，能夠確認到藉由將供脈衝雷射光線聚光之聚光透鏡422a的數值孔徑(NA)除以單結晶基板之折射率(N)後之值(S=NA/N)設定在0.05~0.2的範圍內，可形成屏護通孔。 From the above Experiment 1-1, Experiment 1-2, and Experiment 1-3, it was confirmed that the numerical aperture (NA) of the condensing lens 422a for concentrating the pulsed laser light was divided by the refractive index of the single crystal substrate. The value after (N) (S=NA/N) is set in the range of 0.05 to 0.2 to form a screen through hole.
其次，探討脈衝雷射光線之能量和屏護通孔之長度的相關關係。 Secondly, the relationship between the energy of the pulsed laser light and the length of the screen through hole is discussed.
[實驗2] [Experiment 2]
將厚度1000μm的藍寶石(Al2O3)基板、碳化矽(SiC)基板、氮化鎵(GaN)基板以下列的加工條件照射脈衝雷射光線，並求出脈衝雷射光線之能量(μJ/1個脈衝)和屏護通孔之長度(μm)的關係。 A sapphire (Al 2 O 3 ) substrate, a tantalum carbide (SiC) substrate, a gallium nitride (GaN) substrate having a thickness of 1000 μm is irradiated with pulsed laser light under the following processing conditions, and the energy of the pulsed laser light is obtained (μJ/ The relationship between the length of one screen pulse and the length of the shield hole (μm).
加工條件 Processing conditions
將平均輸出，以間隔0.05W(1μJ/1個脈衝)使平均輸出上昇直至形成屏護通孔為止，形成屏護通孔之後，以間隔0.5W(10μJ/1個脈衝)使平均輸出上昇直至10W(200μJ/1個脈衝)為止，並量測屏護通孔的長度(μm)。 The average output is increased by an interval of 0.05 W (1 μJ/1 pulse) until the screen protector is formed. After the screen protector is formed, the average output is increased by 0.5 W (10 μJ/1 pulse). 10W (200μJ/1 pulse), and measure the length (μm) of the screen protection hole.
由上述實驗2可知，只要將脈衝雷射光線的脈衝能量設定為90μJ/1個脈衝，就可以在上述加工條件中從厚度為300μm的藍寶石(Al2O3)基板所構成之光器件晶圓2的(上表面(表面2a))涵蓋到底面(背面2b)而形成屏護通孔。再者，如果是厚度為300μm的碳化矽(SiC)基板時，只要將脈衝雷射光線的脈衝能量設定成80μJ/1個脈衝即可，如果是厚度為300μm的氮化鎵(GaN)基板時，只要將脈衝雷射光 線的脈衝能量設定成70μJ/1個脈衝即可。 As can be seen from the above Experiment 2, as long as the pulse energy of the pulsed laser light is set to 90 μJ/1 pulse, the optical device wafer composed of a sapphire (Al 2 O 3 ) substrate having a thickness of 300 μm can be used in the above processing conditions. The upper surface (surface 2a) of 2 is covered to the bottom surface (back surface 2b) to form a screen through hole. Further, in the case of a tantalum carbide (SiC) substrate having a thickness of 300 μm, the pulse energy of the pulsed laser light may be set to 80 μJ/1 pulse, and if it is a gallium nitride (GaN) substrate having a thickness of 300 μm. Just set the pulse energy of the pulsed laser light to 70 μJ/1 pulse.
其次，探討脈衝雷射光線的波長和屏護通孔的形成狀況。 Secondly, the wavelength of the pulsed laser light and the formation of the screen through hole are discussed.
[實驗3-1] [Experiment 3-1]
對厚度1000μm的藍寶石基板以下列之加工條件將脈衝雷射光線的波長依2940nm、1550nm、1030nm、515nm、343nm、257nm、151nm往下降低，以驗證是否可以在能帶隙8.0eV(波長換算：155nm)的藍寶石基板上形成屏護通孔。 For a sapphire substrate having a thickness of 1000 μm, the wavelength of the pulsed laser light is lowered by 2940 nm, 1550 nm, 1030 nm, 515 nm, 343 nm, 257 nm, and 151 nm under the following processing conditions to verify whether the band gap can be 8.0 eV (wavelength conversion: A screen protector through hole is formed on the 155 nm) sapphire substrate.
加工條件 Processing conditions
可以確認到的是，如以上所述，在藍寶石基板中，當將脈衝雷射光線的波長設定成對應於能帶隙8.0eV之波長(波長換算：155nm)的2倍以上時，就可以形成屏護通孔。 It can be confirmed that, as described above, in the sapphire substrate, when the wavelength of the pulsed laser light is set to be twice or more the wavelength (wavelength conversion: 155 nm) corresponding to the energy band gap of 8.0 eV, it can be formed. Screen protector through hole.
[實驗3-2] [Experiment 3-2]
對厚度為1000μm的碳化矽(SiC)基板以下列之加工條件將脈衝雷射光線的波長依2940nm、1550nm、1030nm、515nm、257nm往下降低，以驗證是否可以在能帶隙2.9eV(波長換算：425nm)的碳化矽(SiC)基板上形成屏護通孔。 For a silicon carbide (SiC) substrate having a thickness of 1000 μm, the wavelength of the pulsed laser light is lowered by 2940 nm, 1550 nm, 1030 nm, 515 nm, and 257 nm under the following processing conditions to verify whether the band gap can be 2.9 eV (wavelength conversion) A screen protector through hole is formed on a SiC substrate of 425 nm).
加工條件 Processing conditions
可以確認到的是，如以上所述，在碳化矽(SiC)基板中，當將脈衝雷射光線的波長設定成對應於能帶隙2.9eV之波 長(波長換算：425nm)的2倍以上時，就可以形成屏護通孔。 It can be confirmed that, as described above, in the tantalum carbide (SiC) substrate, when the wavelength of the pulsed laser light is set to a wave corresponding to an energy band gap of 2.9 eV When the length (wavelength conversion: 425 nm) is twice or more, the screen protection through hole can be formed.
[實驗3-3] [Experiment 3-3]
對厚度1000μm的氮化鎵(GaN)基板以下列之加工條件將脈衝雷射光線的波長依2940nm、1550nm、1030nm、515nm、257nm往下降低，以驗證是否可在能帶隙3.4eV(波長換算：365nm)的氮化鎵(GaN)基板上形成屏護通孔。 For a gallium nitride (GaN) substrate having a thickness of 1000 μm, the wavelength of the pulsed laser light is lowered by 2940 nm, 1550 nm, 1030 nm, 515 nm, and 257 nm under the following processing conditions to verify whether the band gap can be 3.4 eV (wavelength conversion) A screen protector through hole is formed on a gallium nitride (GaN) substrate of 365 nm).
加工條件 Processing conditions
可以確認到的是，如以上所述，在氮化鎵(GaN)基板中，當將脈衝雷射光線的波長設定成對應於能帶隙3.4eV之波長(波長換算：365nm)的2倍以上時，就可以形成屏護通孔。 It can be confirmed that, as described above, in the gallium nitride (GaN) substrate, the wavelength of the pulsed laser light is set to be twice or more the wavelength (in terms of wavelength: 365 nm) corresponding to the energy band gap of 3.4 eV. When the screen protector through hole can be formed.
由上述之實驗3-1、實驗3-2、實驗3-3，可以確認 到當將脈衝雷射光線的波長設定成對應於單結晶基板的能帶隙之波長的2倍以上時，就可以形成屏護通孔。 It can be confirmed by the above experiment 3-1, experiment 3-2, experiment 3-3 When the wavelength of the pulsed laser light is set to be more than twice the wavelength of the energy band gap of the single crystal substrate, the screen protection via hole can be formed.
以上，雖然就藍寶石(Al2O3)基板、碳化矽(SiC)基板、氮化鎵(GaN)基板作了說明，但本發明也可適用於石英(SiO2)基板、鉭酸鋰(Lithium tantalate)(LT)基板、鈮酸鋰(Lithium niobate)(LN)基板、蘭克賽(Langasite)(La3Ga5SiO14)基板等單結晶基板。 Although the sapphire (Al 2 O 3 ) substrate, the tantalum carbide (SiC) substrate, and the gallium nitride (GaN) substrate have been described above, the present invention is also applicable to a quartz (SiO 2 ) substrate or lithium niobate (Lithium). A single crystal substrate such as a tantalate (LT) substrate, a Lithium niobate (LN) substrate, or a Langasite (La 3 Ga 5 SiO 14 ) substrate.
實施過上述之屏護通孔形成步驟後，就可以實施晶圓分割步驟，對光器件晶圓2賦予外力並沿著連續形成有由細孔231和形成於該細孔231周圍之非晶質232所構成之屏護通孔23的分割預定線22將光器件晶圓2分割成一個個光器件21。晶圓分割步驟，是利用圖6所示之分割裝置5而實施。圖6所示之分割裝置5具備有用以保持上述環狀框架3之框架保持機構51、用以將裝設在該框架保持機構51所保持之環狀框架3上的光器件晶圓2擴張的膠帶擴張機構52，以及拾取式夾頭53。框架保持機構51是由環狀的框架保持構件511，和配置於該框架保持構件511外周之作為固定機構的複數個夾具512所構成。框架保持構件511的上表面形成有用以載置環狀框架3的載置面511a，並可將環狀框架3載置於此載置面511a上。並且，載置於載置面511a上的環狀框架3，可藉由夾具512而被固定在框架保持構件511上。如此所構成之框架保持機構51是被支撐成可藉由膠帶擴張機構52在上下方向上作進退。 After the screen forming via forming step described above is performed, the wafer dividing step can be performed to apply an external force to the optical device wafer 2 and continuously form the amorphous hole 231 and the amorphous formed around the fine hole 231. The dividing line 22 of the screen through hole 23 formed by 232 divides the optical device wafer 2 into individual optical devices 21. The wafer dividing step is carried out using the dividing device 5 shown in FIG. The dividing device 5 shown in FIG. 6 is provided with a frame holding mechanism 51 for holding the annular frame 3, and for expanding the optical device wafer 2 mounted on the annular frame 3 held by the frame holding mechanism 51. A tape expansion mechanism 52, and a pick-up collet 53. The frame holding mechanism 51 is composed of an annular frame holding member 511 and a plurality of jigs 512 which are disposed on the outer periphery of the frame holding member 511 as a fixing mechanism. The upper surface of the frame holding member 511 is formed with a mounting surface 511a on which the annular frame 3 is placed, and the annular frame 3 can be placed on the mounting surface 511a. Further, the annular frame 3 placed on the placing surface 511a can be fixed to the frame holding member 511 by the jig 512. The frame holding mechanism 51 thus constructed is supported so as to advance and retreat in the up and down direction by the tape expanding mechanism 52.
膠帶擴張機構52具備有配置於上述環狀的框架 保持構件511內側之擴張圓筒521。此擴張圓筒521具有比環狀框架3的內徑小，且比黏貼在裝設於該環狀框架3之切割膠帶30上的光器件晶圓2的外徑大的內徑及外徑。又，擴張圓筒521包括有位於下端的支撐凸緣522。圖示之實施形態中的膠帶擴張機構52具備有可於上下方向上將上述環狀的框架保持構件511作進退之支撐機構523。此支撐機構523是由配置於上述支撐凸緣522上的複數個汽缸523a所構成，並將其活塞桿523b連結於上述環狀的框架保持構件511的下表面。像這樣由複數個汽缸523a所構成之支撐機構523，可使環狀的框架保持構件511在如圖7(a)所示之使載置面511a與擴張圓筒521的上端大致形成相同高度之基準位置，與如圖7(b)所示之距離擴張圓筒521的上端預定量下方處的擴張位置之間於上下方向上進行移動。 The tape expansion mechanism 52 is provided with a frame disposed in the above ring shape The expansion cylinder 521 inside the holding member 511 is held. The expansion cylinder 521 has an inner diameter and an outer diameter which are smaller than the inner diameter of the annular frame 3 and larger than the outer diameter of the optical device wafer 2 attached to the dicing tape 30 attached to the annular frame 3. Further, the expansion cylinder 521 includes a support flange 522 at the lower end. The tape expansion mechanism 52 in the illustrated embodiment includes a support mechanism 523 that can advance and retract the annular frame holding member 511 in the vertical direction. The support mechanism 523 is composed of a plurality of cylinders 523a disposed on the support flange 522, and the piston rod 523b is coupled to the lower surface of the annular frame holding member 511. The support mechanism 523 composed of the plurality of cylinders 523a can form the annular frame holding member 511 at substantially the same height as the upper end of the expansion cylinder 521 as shown in Fig. 7(a). The reference position is moved in the vertical direction between the expansion position below the predetermined amount of the upper end of the expansion cylinder 521 as shown in Fig. 7(b).
參照圖7，針對利用如以上所構成之分割裝置5而實施的晶圓分割步驟進行說明。亦即，可將裝設有黏貼著光器件晶圓2之切割膠帶30的環狀框架3，如圖7(a)所示地載置在構成框架保持機構51之框架保持構件511的載置面511a上，並以夾具512固定於框架保持構件511上(框架保持步驟)。此時，是將框架保持構件511定位於圖7(a)所示之基準位置上。接著，將構成膠帶擴張機構52之作為支撐機構523的複數個汽缸523a作動，以使環狀的框架保持構件511下降至圖7(b)所示之擴張位置。如此一來，因為被固定在框架保持構件511的載置面511a上的環狀框架3也會下降，所以可如圖7(b)所示地，使裝設於環狀框架3上的切割膠帶30 接觸於擴張圓筒521的上端緣而被擴張(膠帶擴張步驟)。其結果為，在黏貼於切割膠帶30上的光器件晶圓2上會因為拉伸力放射狀地作用，而沿著連續形成上述屏護通孔23且強度已降低之分割預定線22被分離成一個個的光器件21，並且在光器件21之間形成間隔S。 A wafer dividing step performed by the dividing device 5 configured as described above will be described with reference to Fig. 7 . In other words, the annular frame 3 on which the dicing tape 30 to which the optical device wafer 2 is attached can be placed on the frame holding member 511 constituting the frame holding mechanism 51 as shown in Fig. 7(a). The surface 511a is fixed to the frame holding member 511 by a jig 512 (frame holding step). At this time, the frame holding member 511 is positioned at the reference position shown in Fig. 7 (a). Next, the plurality of cylinders 523a constituting the tape expansion mechanism 52 as the support mechanism 523 are actuated to lower the annular frame holding member 511 to the expanded position shown in Fig. 7(b). As a result, since the annular frame 3 fixed to the mounting surface 511a of the frame holding member 511 is also lowered, the cutting provided on the annular frame 3 can be cut as shown in Fig. 7(b). Tape 30 It is expanded in contact with the upper end edge of the expansion cylinder 521 (tape expansion step). As a result, the optical device wafer 2 adhered to the dicing tape 30 is radially actuated by the tensile force, and is separated along the dividing line 22 which continuously forms the screen protecting hole 23 and whose strength has been lowered. The optical devices 21 are formed one by one, and a space S is formed between the optical devices 21.
接著，如圖7(c)所示，作動拾取式夾頭53以將光器件21吸附、從切割膠帶30剝離以進行拾取、搬送至圖未示之托盤(tray)或晶粒黏著(die bonding)步驟中。再者，在拾取步驟中，由於如上所述地可將黏貼在切割膠帶30上的一個個光器件21之間的間隙S加寬，所以不會有與相鄰之光器件21接觸之情形而可容易地進行拾取。 Next, as shown in FIG. 7(c), the pickup chuck 53 is actuated to suck the optical device 21, peel it off from the dicing tape 30, pick it up, and transport it to a tray or die bonding (not shown). ) in the step. Further, in the pickup step, since the gap S between the one optical devices 21 adhered to the dicing tape 30 can be widened as described above, there is no possibility of contact with the adjacent optical device 21. Picking up is easy.
如此進行而被拾取的光器件21會如圖8所示地於外周面殘存非晶質232。 The optical device 21 picked up in this manner retains the amorphous 232 on the outer peripheral surface as shown in FIG.
實施過上述之拾取步驟後，就可以實施用研磨材料研磨殘存於光器件21之外周面之非晶質232以去除非晶質的非晶質去除步驟。 After the above-described pick-up step, the amorphous 232 remaining on the outer peripheral surface of the optical device 21 by the abrasive material is removed to remove the amorphous amorphous removal step.
此非晶質去除步驟，可如圖9(a)所示地藉由使用砂紙6研磨光器件21的外周面，以去除殘存於光器件21之外周面的非晶質232。其結果，如圖9(b)所示，光器件21的外周面會因為將非晶質去除而露出藍寶石(Al2O3)基板。因此，可提昇光器件21的亮度。 In the amorphous removal step, the outer peripheral surface of the optical device 21 can be polished by using the sandpaper 6 as shown in FIG. 9(a) to remove the amorphous 232 remaining on the outer peripheral surface of the optical device 21. As a result, as shown in FIG. 9(b), the outer peripheral surface of the optical device 21 is exposed to remove amorphous material to expose a sapphire (Al 2 O 3 ) substrate. Therefore, the brightness of the optical device 21 can be improved.
再者，在上述屏護通孔形成步驟中，因為由作為單結晶基板之藍寶石(Al2O3)基板所構成的光器件晶圓2上所形成之構成屏護通孔23的非晶質232很脆弱，因此在非晶質去 除步驟中所使用的研磨材料是採用硬度在單結晶基板的硬度以下之材料所構成的磨粒以進行研磨，藉此可以輕易地僅去除非晶質232。在上述之實施形態中，因為構成光器件晶圓2之單結晶基板是由藍寶石(Al2O3)基板所構成，因此作為研磨材料而採用的是由硬度在藍寶石(Al2O3)的硬度(新莫氏硬度No.12)以下的材料所構成之磨粒。因此，當在碳化矽(SiC)基板上形成有屏護通孔23時，作為研磨材料可使用硬度在碳化矽(SiC)基板的硬度(新莫氏硬度No.13)以下的材料，例如碳化矽(SiC)、氮化鎵(GaN)、矽酸鹽、石英所構成之磨粒。 Further, in the above-described screen-protecting via forming step, the amorphous layer constituting the screen-protecting via 23 formed on the optical device wafer 2 composed of the sapphire (Al 2 O 3 ) substrate as the single crystal substrate is formed. Since the 232 is very fragile, the abrasive used in the amorphous removal step is abrasive grains made of a material having a hardness lower than the hardness of the single crystal substrate, whereby the amorphous 232 can be easily removed. In the above embodiment, since the single crystal substrate constituting the optical device wafer 2 is made of a sapphire (Al 2 O 3 ) substrate, the hardness is in sapphire (Al 2 O 3 ). Abrasive grains composed of materials having a hardness (new Mohs hardness No. 12) or less. Therefore, when the screen protector 23 is formed on the tantalum carbide (SiC) substrate, a material having a hardness lower than the hardness (new Mohs hardness No. 13) of the tantalum carbide (SiC) substrate, for example, carbonization, can be used as the abrasive. Abrasive grains composed of bismuth (SiC), gallium nitride (GaN), niobate, and quartz.
其次，參照圖10至圖12，針對本發明之單結晶基板之加工方法的第2實施形態進行說明。 Next, a second embodiment of the method for processing a single crystal substrate of the present invention will be described with reference to Figs. 10 to 12 .
圖10中所示為作為單結晶基板之厚度為例如300μm的藍寶石基板10。針對將此藍寶石基板10的厚度形成為150μm的加工方法進行說明。 A sapphire substrate 10 having a thickness of, for example, 300 μm as a single crystal substrate is shown in FIG. A processing method for forming the thickness of the sapphire substrate 10 to 150 μm will be described.
要將厚度為300μm的藍寶石基板10形成為150μm的厚度，首先，要如上述地實施數值孔徑設定步驟，將供脈衝雷射光線聚光之聚光透鏡的數值孔徑(NA)相對於作為單結晶基板之藍寶石基板10設定成預定值。 To form a sapphire substrate 10 having a thickness of 300 μm to a thickness of 150 μm, first, the numerical aperture setting step is performed as described above, and the numerical aperture (NA) of the condensing lens for collecting the pulsed laser light is used as a single crystal. The sapphire substrate 10 of the substrate is set to a predetermined value.
然後，實施屏護通孔形成步驟，如圖11所示地將脈衝雷射光線之聚光點從單結晶基板的上表面定位到所期望的位置上而照射脈衝雷射光線，並從作為單結晶基板之藍寶石基板10的上表面使細孔和屏護該細孔之非晶質成長，而由藍寶石基板10的上表面到150μm的深度處連接形成屏護 通孔23。此屏護通孔形成步驟是藉由使用上述圖3所示之雷射加工裝置3，且根據上述之加工條件對藍寶石基板10的整個面實施，以從上表面到150μm的深度處形成屏護通孔23層。此時，為了從藍寶石基板10的上表面到150μm的深度處形成屏護通孔23，是根據上述實驗2的結果將脈衝雷射光線的脈衝能量設定成30μJ/1個脈衝。 Then, a screen through hole forming step is performed, as shown in FIG. 11, the spotlight of the pulsed laser light is positioned from the upper surface of the single crystal substrate to a desired position to illuminate the pulsed laser light, and The upper surface of the sapphire substrate 10 of the crystal substrate causes the pores and the amorphous portion of the screen to grow, and is connected by the upper surface of the sapphire substrate 10 to a depth of 150 μm to form a screen protector. Through hole 23. This screen guard through hole forming step is performed by using the above-described laser processing apparatus 3 shown in FIG. 3 and performing the entire surface of the sapphire substrate 10 in accordance with the above-described processing conditions to form a screen guard from the upper surface to a depth of 150 μm. 23 holes through the hole. At this time, in order to form the screen protector 23 from the upper surface of the sapphire substrate 10 to a depth of 150 μm, the pulse energy of the pulsed laser light was set to 30 μJ / 1 pulse according to the result of the above Experiment 2.
其次，實施非晶質去除步驟，對已實施過上述屏護通孔形成步驟之作為單結晶基板的藍寶石基板10的上表面進行研磨以將藍寶石基板10形成為預定的厚度(例如150μm)。此非晶質去除步驟，是使用圖12(a)所示之研磨裝置6而實施。圖12(a)所示之研磨裝置6具備有保持被加工物之工作夾台61，以及用以磨削被該工作夾台61所保持之被加工物的研磨機構62。工作夾台61是構成為可將被加工物吸引保持在上表面，並可藉由圖未示之旋轉驅動機構使其在圖12(a)中朝箭頭61a所示的方向旋轉。研磨機構62具備有主軸殼體621、被該主軸殼體621支撐成旋轉自如並藉由圖未示的旋轉驅動機構使其旋轉的旋轉主軸622、裝設於該旋轉主軸622的下端之機座623，及安裝在該機座623之底面的研磨工具624。此研磨工具624是由圓形之基台625，以及裝設在該基台625底面的研磨墊626所構成，且是藉由連結螺栓627將基台625安裝在機座623的底面。再者，在圖示之實施形態中，研磨墊626是在毛氈(felt)中混入由作為研磨材料的二氧化矽(silica)所構成之磨粒。 Next, an amorphous removal step is performed to polish the upper surface of the sapphire substrate 10 as a single crystal substrate on which the above-described screen through hole forming step has been performed to form the sapphire substrate 10 to a predetermined thickness (for example, 150 μm). This amorphous removal step is carried out using the polishing apparatus 6 shown in Fig. 12 (a). The polishing apparatus 6 shown in Fig. 12(a) is provided with a work chuck 61 for holding a workpiece, and a polishing mechanism 62 for grinding a workpiece held by the work chuck 61. The work chuck 61 is configured to suck and hold the workpiece on the upper surface, and is rotatable in a direction indicated by an arrow 61a in Fig. 12(a) by a rotary drive mechanism (not shown). The polishing mechanism 62 includes a spindle housing 621, a rotary spindle 622 that is rotatably supported by the spindle housing 621 and that is rotated by a rotary drive mechanism (not shown), and a base that is attached to the lower end of the rotary spindle 622. 623, and an abrasive tool 624 mounted on a bottom surface of the base 623. The grinding tool 624 is composed of a circular base 625 and a polishing pad 626 mounted on the bottom surface of the base 625, and the base 625 is attached to the bottom surface of the base 623 by a connecting bolt 627. Further, in the illustrated embodiment, the polishing pad 626 is formed by mixing abrasive grains composed of silica as an abrasive in a felt.
在使用上述之研磨裝置6以實施上述非晶質去除 步驟時，是如圖12(a)所示地將已實施過上述屏護通孔形成步驟之藍寶石基板10中的和形成有屏護通孔23層之面側為相反側之面載置於之工作夾台61的上表面(保持面)。並且，以圖未示之吸引機構將藍寶石基板10吸附保持於工作夾台61上(晶圓保持步驟)。因此，保持於工作夾台61上的藍寶石基板10，會成為形成有屏護通孔23層之面在上側。像這樣將藍寶石基板10吸引保持於工作夾台61上之後，就可以在使工作夾台61於圖12(a)中朝箭頭61a所示的方向以預定之旋轉速度旋轉時，使研磨機構62之研磨工具624在圖12(a)中朝箭頭624a所示的方向以預定之旋轉速度旋轉，以如圖12(b)所示地使研磨墊626接觸成為被加工面之藍寶石基板10的上表面，並將研磨工具624在圖12(a)及圖12(b)中如箭頭624b所示地以預定之磨削進給速度朝下方(對工作夾台61之保持面為垂直的方向)磨削進給預定量。其結果，可如圖12(c)所示地將形成於藍寶石基板10之上表面側的屏護通孔23層去除而露出藍寶石(Al2O3)基板。再者，在上述屏護通孔形成步驟中，因為形成在作為單結晶基板之藍寶石基板10上之構成屏護通孔23層的非晶質232如上所述地很脆弱，因此，透過在非晶質去除步驟中所使用的研磨材料是使用硬度在單結晶基板的硬度以下之二氧化矽所構成的磨粒來進行研磨之作法，就可以輕易地僅去除屏護通孔23層。在上述的實施形態中，因為單結晶基板是由藍寶石基板所構成，所以作為研磨材料，可以使用硬度在藍寶石(Al2O3)的硬度(新莫氏硬度No.12)以下之材料所構成之磨粒，例如 藍寶石(Al2O3)、氮化鎵(GaN)、矽酸鹽所構成的磨粒。 When the above-described polishing apparatus 6 is used to carry out the above-described amorphous removal step, as shown in FIG. 12(a), the screen in the sapphire substrate 10 on which the above-described screen-protecting via-forming step is formed is formed. The surface on the opposite side of the hole 23 is placed on the upper surface (holding surface) of the working chuck 61. Further, the sapphire substrate 10 is adsorbed and held on the work chuck 61 by a suction mechanism (not shown) (wafer holding step). Therefore, the sapphire substrate 10 held on the work chuck 61 is on the upper side of the surface on which the screen protector 23 is formed. After the sapphire substrate 10 is sucked and held on the work chuck 61 as described above, the grinding mechanism 62 can be caused to rotate the work chuck 61 at a predetermined rotational speed in the direction indicated by the arrow 61a in Fig. 12(a). The grinding tool 624 is rotated at a predetermined rotational speed in the direction indicated by the arrow 624a in Fig. 12(a) to bring the polishing pad 626 into contact with the sapphire substrate 10 as the processed surface as shown in Fig. 12(b). The surface, and the grinding tool 624 is turned downward at a predetermined grinding feed speed as shown by an arrow 624b in FIGS. 12(a) and 12(b) (the direction perpendicular to the holding surface of the work chuck 61) Grinding feeds a predetermined amount. As a result, as shown in FIG. 12(c), the screen protection via 23 formed on the upper surface side of the sapphire substrate 10 can be removed to expose a sapphire (Al 2 O 3 ) substrate. Further, in the above-described screen-protecting via forming step, since the amorphous 232 constituting the layer of the screen-protecting via 23 formed on the sapphire substrate 10 as the single-crystal substrate is fragile as described above, The polishing material used in the crystal removal step is a method of polishing using abrasive grains composed of cerium oxide having a hardness equal to or less than the hardness of the single crystal substrate, so that only the layer of the through-hole 23 can be easily removed. In the above-described embodiment, since the single crystal substrate is composed of a sapphire substrate, it is possible to use a material having a hardness equal to or less than the hardness of sapphire (Al 2 O 3 ) (new Mohs hardness No. 12) as the polishing material. Abrasive particles, such as abrasive grains composed of sapphire (Al 2 O 3 ), gallium nitride (GaN), and niobate.
像這樣，在屏護通孔形成步驟中，因為形成在作為單結晶基板之藍寶石基板10上之構成屏護通孔23層的非晶質232如上所述地很脆弱，因此，藉由在非晶質去除步驟中使用硬度在藍寶石(Al2O3)的硬度以下的二氧化矽等所構成的磨粒來進行研磨，就可以輕易地僅去除屏護通孔23層，因而可以將作為單結晶基板之藍寶石基板10有效率地形成為預定的厚度。 As described above, in the screen protective via forming step, since the amorphous 232 constituting the layer of the shield via 23 formed on the sapphire substrate 10 as the single crystal substrate is fragile as described above, In the crystal removal step, the abrasive grains composed of cerium oxide or the like having a hardness equal to or less than the hardness of sapphire (Al 2 O 3 ) are used for polishing, so that only the layer of the through-hole 23 can be easily removed, so that it can be used as a single The sapphire substrate 10 of the crystal substrate is efficiently formed to have a predetermined thickness.
其次，參照圖13，針對本發明之單結晶基板之加工方法的第3實施形態進行說明。再者，在第3實施形態中是針對在圖10所示之作為單結晶基板之厚度為例如300μm的藍寶石基板10之表面上將凹部散佈而形成之方法進行說明。 Next, a third embodiment of the method for processing a single crystal substrate of the present invention will be described with reference to Fig. 13 . In the third embodiment, a method of forming a concave portion on the surface of the sapphire substrate 10 having a thickness of, for example, 300 μm as the single crystal substrate shown in FIG. 10 will be described.
要在厚度300μm之藍寶石基板10的表面上將例如深度為75μm的凹部散佈而形成，首先，要如上述地實施數值孔徑設定步驟，將供脈衝雷射光線聚光之聚光透鏡的數值孔徑(NA)相對於作為單結晶基板之藍寶石基板10設定成預定值。 To form a concave portion having a depth of, for example, 75 μm on the surface of the sapphire substrate 10 having a thickness of 300 μm, first, the numerical aperture setting step is performed as described above, and the numerical aperture of the condensing lens for concentrating the pulsed laser light is NA) is set to a predetermined value with respect to the sapphire substrate 10 as a single crystal substrate.
然後，實施屏護通孔形成步驟，如圖13所示地將脈衝雷射光線之聚光點從單結晶基板的上表面定位到所期望的位置上以照射脈衝雷射光線，並從作為單結晶基板之藍寶石基板10的上表面使細孔和屏護該細孔之非晶質成長，而由藍寶石基板10的上表面到75μm的深度處將屏護通孔23散佈而形成。此屏護通孔形成步驟是藉由使用上述圖3所示 之雷射加工裝置3，且根據上述之加工條件對藍寶石基板10的整個面實施，以從上表面到150μm的深度處形成屏護通孔23層。此時，為了從藍寶石基板10的上表面到75μm的深度處形成屏護通孔23，是根據上述實驗2的結果將脈衝雷射光線的脈衝能量設定成10μJ/1個脈衝。 Then, a screen through hole forming step is performed, as shown in FIG. 13, the spotlight of the pulsed laser light is positioned from the upper surface of the single crystal substrate to a desired position to illuminate the pulsed laser light, and The upper surface of the sapphire substrate 10 of the crystal substrate is formed by the pores and the amorphous growth of the pores, and is formed by spreading the screen-protecting through holes 23 from the upper surface of the sapphire substrate 10 to a depth of 75 μm. The screen through hole forming step is performed by using the above FIG. The laser processing apparatus 3 is applied to the entire surface of the sapphire substrate 10 in accordance with the above-described processing conditions, and a layer of the screen protector 23 is formed from the upper surface to a depth of 150 μm. At this time, in order to form the screen protector 23 from the upper surface of the sapphire substrate 10 to a depth of 75 μm, the pulse energy of the pulsed laser light was set to 10 μJ / 1 pulse according to the result of the above Experiment 2.
其次，實施非晶質去除步驟，對已實施過上述屏護通孔形成步驟之作為單結晶基板的藍寶石基板10的上表面進行研磨以在藍寶石基板10之上表面將凹部散佈而形成。此非晶質去除步驟，是使用上述圖12(a)所示之研磨裝置6，而與上述圖12(a)及12(b)所示之非晶質去除步驟同樣地實施。其結果，因為在藍寶石基板10之上表面將屏護通孔23散佈而形成之區域如上所述地很脆弱，所以藉由使用硬度在藍寶石(Al2O3)硬度以下的二氧化矽等所構成的磨粒來進行研磨，就可以輕易地僅去除形成有屏護通孔23的區域，因此可以在圖13(b)所示之作為單結晶基板的藍寶石基板10的表面上將預定深度(在圖示之實施形態中為深度75μm)之凹部101有效率地形成為預定的厚度。 Next, an amorphous removal step is performed, and the upper surface of the sapphire substrate 10 as a single crystal substrate on which the screen through hole forming step has been performed is polished to spread the concave portion on the upper surface of the sapphire substrate 10. This amorphous removal step is carried out in the same manner as the amorphous removal step shown in Figs. 12(a) and 12(b) above, using the polishing apparatus 6 shown in Fig. 12(a). As a result, since the region formed by dispersing the screen-protecting through-holes 23 on the upper surface of the sapphire substrate 10 is fragile as described above, it is used by using cerium oxide having a hardness equal to or less than the hardness of sapphire (Al 2 O 3 ). By arranging the abrasive grains to be polished, it is possible to easily remove only the region in which the screen protector 23 is formed, and thus the predetermined depth can be set on the surface of the sapphire substrate 10 as a single crystal substrate shown in Fig. 13 (b) ( The recessed portion 101 having a depth of 75 μm in the illustrated embodiment is efficiently formed to have a predetermined thickness.
以上，雖然在上述之實施形態中主要針對藍寶石(Al2O3)基板的加工，和藍寶石(Al2O3)基板、碳化矽(SiC)基板、氮化鎵(GaN)基板的實驗例進行說明，但本發明也可以適用於石英(SiO2)基板、鉭酸鋰(LT)基板、鈮酸鋰(LN)基板、蘭克賽(Langasite)(La3Ga5SiO14)基板等單結晶基板。 Above, although mainly for machining of sapphire (Al 2 O 3) substrate, and a sapphire (Al 2 O 3) substrate, silicon carbide (SiC) substrate, Experimental Example nitride (GaN) substrate of the above-described embodiment Note that the present invention is also applicable to a single crystal such as a quartz (SiO 2 ) substrate, a lithium niobate (LT) substrate, a lithium niobate (LN) substrate, or a Langasite (La 3 Ga 5 SiO 14 ) substrate. Substrate.
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