TWI629729B - Chip positioning method and manufacturing equipment for use in fan-out process - Google Patents

Abstract

The present invention provides a grain positioning method applied to a fan-out process, which includes a seeding step, a measuring step, a potting step, a laser drilling step, a plating step, and a circuit exposure step, respectively. The die positioning method comprises the following steps: an X-ray inspection step, an image analysis step and a repositioning step between the filling step and the laser drilling step, and performing an X-ray scan on the X-ray inspection step to generate an X-ray scan image Information, in the image analysis step, analyzing the offset state between the actual position and the predetermined position of each die to obtain the grain offset state information, and correcting the laser drilling data according to the grain offset state information in the repositioning step The laser drilling step is performed in accordance with the corrected laser drilling data. The present invention also provides a production apparatus for use in a fan-out process.

Description

Grain positioning method and production equipment applied in fan-out process

The invention relates to a grain positioning method and a production device, in particular to a grain positioning method and a production device applied in a fan-out process.

In the fan-out process of a semiconductor, a crystallization step, a potting step, a laser drilling step, and a circuit exposure step are generally included. By crystallizing, a plurality of diced dies are placed on a predetermined position of a substrate for subsequent processing and packaging. The step of filling the glue means coating the insulating glue on the upper surface of the substrate and the die to form an insulating layer for encapsulating and fixing the crystal grains. After the insulating glue is fixed, the laser drilling device performs laser drilling according to the laser drilling data (related to the predetermined position of the die) to form a through hole penetrating the insulating layer and the substrate. The through holes of the vertical substrate and the insulating layer are usually located outside the die, and wires can be disposed to electrically connect the contact portions of the die and the substrate.

However, the glue before the fixation is a fluid, so in the potting step, the flow of the glue may cause the crystal grains to deviate from the predetermined position, or the stress from each direction when the fixation is applied may cause the crystal grains to deviate. This deviation is not only two-dimensional, but also three-dimensional. Once the die is buried in the insulating layer, its offset will be difficult to observe. If the laser drilling is performed according to the original laser drilling data, the laser beam may be accidentally damaged due to the deviation of the crystal grain from the original predetermined position, and the position where the perforation is formed cannot correspond to the crystal grain and the like. This in turn affects the subsequent plating steps and the circuit exposure steps cannot be performed smoothly. As a result, not only the production yield is greatly reduced, but also time and material costs are wasted.

Therefore, in order to solve the above problems, an object of the present invention is to provide a die positioning method and a production apparatus which are applied to a fan-out process.

The technical means adopted by the present invention for solving the problems of the prior art provides a method for locating a grain in a fan-out process, wherein the fan-out process sequentially includes placing a plurality of dies on a predetermined position of a substrate. a seeding step, a potting step of coating a plurality of dies on the upper surface of the substrate and the substrate to form a package structure, and performing a laser drill according to a laser drilling material a laser drilling step of the hole, the grain positioning method comprising the following steps: an X-ray inspection step, between the potting step and the laser drilling step, the package structure and the X-ray inspection mechanism Performing an X-ray scan to generate an X-ray scan image information, the X-ray scan image information includes planar image information of positions of the plurality of crystal grains relative to the substrate, and each of the plurality of different depths Depth image information of the embedded state of the die in the package structure; an image analysis step, wherein the image analysis mechanism analyzes each of the X-ray scan image information a grain offset state information obtained by an offset position between the actual position of the plurality of dies and a predetermined position of the package structure; and a repositioning step by which a repositioning mechanism is based on the die offset state information And correcting the laser drilling data, wherein the laser drilling step is performed by the laser drilling mechanism according to the corrected laser drilling data, and then the corrected circuit step is based on the corrected Execution by laser drilling data.

In an embodiment of the invention, a method for locating a grain in a fan-out process is provided. The image analysis step includes: displaying a planar image of the position of the plurality of dies relative to the substrate according to the X-ray scan image information. The information is used to analyze an X-axis offset distance, a Y-axis offset distance, and an offset rotation angle between an actual position of each of the plurality of crystal grains and the predetermined position.

In an embodiment of the invention, a method for positioning a grain in a fan-out process is provided. The image analysis step further includes scanning the image information according to the X-ray to analyze a warpage state of the package structure.

The technical means adopted by the present invention to solve the problems of the prior art provides a production apparatus for use in a fan-out process, wherein the fan-out process includes forming a package structure and a plurality of crystal grains embedded in predetermined positions of the package structure. And forming a laser drilling data according to the predetermined position and performing laser drilling according to the laser drilling data, and then performing the circuit exposure step according to the corrected laser drilling data. The production device for the fan-out process includes: an X-ray inspection mechanism, performing X-ray scanning on the package structure and the plurality of dies embedded in the package structure to generate an X-ray scan image information, the X-ray scan The image information includes the planar image information of the positions of the plurality of crystal grains relative to the substrate, and the depth image information of the embedded states of the plurality of crystal grains at different depths in the package structure; an image analysis mechanism, The signal is connected to the X-ray inspection mechanism, and the image analysis mechanism analyzes the offset position between the actual position of the plurality of crystal grains and the predetermined position of the package structure according to the X-ray scan image information to obtain a crystal grain. Offset status information; and a repositioning mechanism, the signal is connected to the image analysis mechanism, and the repositioning mechanism corrects the laser drilling data according to the grain offset state information.

In an embodiment of the invention, there is provided a production apparatus for use in a fan-out process, further comprising a laser drilling mechanism and a laser exposure machine, wherein the signal is connected to the repositioning mechanism, and the laser drilling mechanism is corrected according to The laser drilling material is then subjected to laser drilling, and the laser exposure is performed by the laser exposure machine in accordance with the corrected data.

In an embodiment of the invention, a production apparatus for use in a fan-out process is provided, the X-ray inspection mechanism being a 3DX ray inspection mechanism.

In one embodiment of the invention, a production apparatus for use in a fan-out process is provided, the X-ray inspection mechanism including a digital micro mirror element.

Through the technical means adopted by the present invention, the offset state between the actual position and the predetermined position of each die can be analyzed to obtain the grain offset state information, and the information is accurately repositioned according to the die offset state information. These grains are used to correct the laser drilling data, so that the perforations formed by the laser drilling can correspond to the positionally displaced crystal grains, thereby improving the production yield and reducing the cost. In addition, the X-ray scanning image information generated by the X-ray inspection step includes the buried state of each of the plurality of crystal grains at different depths, so that the warpage state of the package structure can be analyzed, thereby facilitating the improvement of the subsequent Precision of processing and packaging processes.

The specific embodiments of the present invention will be further described by the following examples and the accompanying drawings.

Hereinafter, embodiments of the present invention will be described with reference to Figs. 1 to 14 . This description is not intended to limit the embodiments of the invention, but is an embodiment of the invention.

Before describing the present invention, it is necessary to understand what a fan-out process of a semiconductor package is. The fan-out process includes a crystallization step, a measuring step, a potting step, a laser drilling step, a plating step, and a circuit exposure step.

As shown in FIG. 1, in the seeding step, a plurality of crystal grains D are placed at a predetermined position of a substrate B.

Then, as shown in FIG. 2, in the step of filling the glue, an insulating layer G is coated on the upper surfaces of the plurality of crystal grains D and the substrate B, and the insulating layer G and the substrate B form a package structure to form a plurality of crystal grains D. It is buried and only the contact portion of the die D is exposed.

As shown in Fig. 3, before the laser drilling step, the surface of the insulating layer G is plated with a wire electrically connecting the contact portion of the die D.

As shown in FIG. 4, in the laser drilling step, laser drilling is performed according to a laser drilling data (related to the arrangement of the substrate B and the die D), that is, the energy concentrated by the laser light A hole is punched at a specific position in the package structure for the subsequent plating step and the circuit exposure step to continue plating the wire so that the die D is electrically connected to the substrate B through the contact portion and the wire.

Please refer to FIG. 5 and FIG. 6 together, and the die positioning method and the production device according to an embodiment of the present invention are applied to the fan-out process in the application. The grain positioning method includes the following steps: an X-ray inspection step S101, an image analysis step S102, and a repositioning step S103. The production device 100 for use in the fan-out process of an embodiment of the present invention includes an X-ray inspection mechanism 1, an image analysis mechanism 2, and a repositioning mechanism 3. The image analysis mechanism 2 is connected to the X-ray inspection mechanism 1 and the repositioning mechanism 3. The production apparatus 100 further includes a laser drilling mechanism 4 and a laser exposure mechanism 5 connected to the repositioning mechanism 3.

In the X-ray inspection step S101, between the potting step and the laser drilling step, the X-ray inspection mechanism 1 performs X-ray scanning on the package structure and a plurality of crystal grains D embedded in the package structure to generate an X. Radiographic image information T1. Since the insulating layer G hardly reflects and absorbs X-rays (that is, the insulating layer G hardly causes penetration of X-rays, it is not exposed in the X-ray scanning image information T1), and the crystal grains D and the substrate B The degree of absorption and reflection of X-rays is also different, so that a plurality of crystal grains D embedded in the insulating layer G can be easily distinguished by X-rays (as shown in the photographs of FIGS. 12 and 13), and thus The relative positional relationship between the individual crystal grains D and the substrate B in space is known to achieve accurate positioning.

The X-ray scan image information T1 includes planar image information of the positions of the plurality of crystal grains D with respect to the substrate B, and depth image information of the buried state of each of the plurality of crystal grains D at different depths with respect to the package structure. The planar image information refers to image information in which a plurality of crystal grains D are projected on the upper surface of the substrate B. By using the set X-rays to image at different depths, the depth image information of the plurality of crystal grains D in the buried state relative to the package structure can be obtained.

Next, in the image analysis step S102, the image analysis mechanism 2 analyzes the offset position between the actual position of each of the plurality of crystal grains D and the predetermined position of the package structure based on the X-ray scan image information T1. Grain offset status information T2. In this embodiment, the image analyzing step S102 includes: analyzing the actual position of each of the plurality of crystal grains D and the predetermined position according to the planar image information of the positions of the plurality of crystal grains D relative to the substrate B of the X-ray scanning image information T1. The X-axis offset distance, the Y-axis offset distance, and the offset rotation angle. As shown in Fig. 7, there is no offset between the actual position of each of the plurality of crystal grains D and the predetermined position. As shown in Fig. 8, there is an X-axis offset distance between the actual position of each of the plurality of crystal grains D and the predetermined position. As shown in Fig. 9, there is a Y-axis offset distance between the actual position of each of the plurality of crystal grains D and the predetermined position. As shown in Fig. 10, there is an offset rotation angle between the actual position of each of the plurality of crystal grains D and the predetermined position. As shown in Fig. 11, the actual position of each of the plurality of crystal grains D and the predetermined position have an offset distance between the X-axis and the Y-axis. In addition, the degree of offset and offset of each of the plurality of crystal grains D on one substrate B are also different, and there may be both unshifted crystal grains D and offset crystal grains D. The offset state as shown in Fig. 12 is formed by the total complexity of the degree of offset. Therefore, the image analysis mechanism 2 analyzes the respective offset states of the respective crystal grains D. In detail, the image analysis mechanism 2 can determine that part of the crystal grain D is not offset according to the X-ray scan image information T1, and the other crystal grains D are each shifted from the original predetermined position, and the state and extent of the deviation are individual differences. Then, the image analysis mechanism 2 calculates the exact distance between the actual position of the offset die D and the original predetermined position, and the angle is obtained to obtain the die offset state information T2.

Next, in the repositioning step S103, the re-positioning mechanism 3 corrects the aforementioned laser drilling data according to the grain offset state information T2. In detail, the specific partial grain D is not offset by the grain offset state information T2, so the repositioning mechanism 3 is retained at a predetermined perforation position corresponding to the unshifted crystal grains D; According to the grain offset state information T2, the exact distance between the actual position of the other offset crystal grains D and the original predetermined position and the exact value of the angle are known, thereby recalculating and determining those offset grains D. Corresponding individual perforation locations. The repositioning mechanism 3 finally corrects the original laser drilling data according to the above calculation.

In the laser drilling step S104, the laser drilling is performed by the laser drilling mechanism 4 in accordance with the corrected laser drilling data T3. Therefore, the perforations formed by the laser drilling can correspond to the respective crystal grains D, so that the subsequent electroplating step S105 and the circuit exposure step S106 can be smoothly performed, thereby improving the production yield and reducing the production cost.

Further, after the package structure is plated in the plating step S105, the laser exposure mechanism 5 performs a circuit exposure step S106 on the package structure according to the corrected laser drilling data T3.

In the present embodiment, the X-ray inspection mechanism 1 is a 3DX ray inspection mechanism including a digital micro mirror device (DMD) for rapid scanning imaging. Therefore, in the image analysis step S102, the depth image information of the embedded state of each of the plurality of crystal grains D in the package structure according to different depths of the X-ray scan image information T1 is further included to analyze the warpage of the package structure. status.

In summary, the present invention is applied to a die positioning process for grain positioning and production equipment, which can solve many problems of the prior art, improve the production yield of the semiconductor fan-out process, and reduce the cost.

The above description and description are only illustrative of the preferred embodiments of the present invention, and those of ordinary skill in the art can make other modifications in accordance with the scope of the invention as defined below and the description above, but such modifications should still be It is within the scope of the invention to the invention of the invention.

<TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> 100 </td><td> Production equipment for fan-out process</td>< /tr><tr><td> 1 </td><td> X-ray inspection agency</td></tr><tr><td> 2 </td><td> Image analysis agency</td> </tr><tr><td> 3 </td><td> Repositioning Mechanism</td></tr><tr><td> 4 </td><td> Laser Drilling Mechanism</ Td></tr><tr><td> 5 </td><td> laser exposure mechanism</td></tr><tr><td> B </td><td> substrate</td ></tr><tr><td> D </td><td> grain </td></tr><tr><td> G </td><td> insulating layer </td>< /tr><tr><td> S101 </td><td> X-ray inspection steps</td></tr><tr><td> S102 </td><td> Image analysis steps</td> </tr><tr><td> S103 </td><td> Repositioning Steps</td></tr><tr><td> S104 </td><td> Laser Drilling Steps</ Td></tr><tr><td> S105 </td><td> Plating Steps</td></tr><tr><td> S106 </td><td> Circuit Exposure Steps </ Td></tr><tr><td> T1 </td><td> X-ray scan image information</td></tr><tr><td> T2 </td><td> Shift status information</td></tr><tr><td> T3 </td><td> Corrected laser drilling data</td></tr></TBODY>< /TABLE>

Figure 1 is a schematic diagram showing the step of crystallizing the fan-out process. Figure 2 is a schematic diagram showing the steps of the potting process of the fan-out process. Figure 3 is a schematic diagram showing the plating steps of the fan-out process. Figure 4 is a schematic diagram showing the laser drilling steps of the fan-out process. FIG. 5 is a flow chart showing a method of locating a die applied in a fan-out process according to an embodiment of the invention. Fig. 6 is a schematic view showing a production apparatus applied to a fan-out process according to an embodiment of the present invention. 7 to 11 are views showing an offset state between the actual position and the predetermined position of each of the crystal grains. Fig. 12 is a view showing the state of displacement of each of the crystal grains on the substrate. Figures 13 and 14 are schematic views showing information of X-ray scanned images.

Claims (9)

A method for locating a grain in a fan-out process, wherein the fan-out process sequentially includes a crystallization step of placing a plurality of dies on a predetermined position of a substrate, and coating an insulating layer on the plurality of crystals a filling step of forming a package structure with the upper surface of the substrate and the substrate, and a laser drilling step of performing laser drilling according to a laser drilling material, the grain positioning method comprising the following steps An X-ray inspection step, between the potting step and the laser drilling step, an X-ray inspection mechanism performs X-ray scanning on the package structure and the plurality of crystal grains to generate an X-ray scan image information The X-ray scanning image information includes planar image information of positions of the plurality of crystal grains relative to the substrate, and depth image information of the embedded states of the plurality of crystal grains at different depths in the package structure; An image analysis step of analyzing, by an image analysis mechanism, the actual position of each of the plurality of dies and the predetermined position of the package structure according to the X-ray scan image information The offset state obtains a die offset state information; and a repositioning step of correcting the laser drilling data by a repositioning mechanism according to the die offset state information, wherein the laser drilling step The laser drilling mechanism is executed by the laser drilling data according to the calibration. The method for locating a grain in a fan-out process according to claim 1, wherein the image analyzing step comprises: analyzing, according to the image information of each of the plurality of dies relative to the position of the substrate according to the X-ray scanning image information; An X-axis offset distance, a Y-axis offset distance, and an offset rotation angle between an actual position of each of the plurality of crystal grains and the predetermined position. The method for processing a grain in a fan-out process according to claim 1, wherein the image analyzing step further comprises: scanning the image information according to the X-ray to analyze a warpage state of the package structure. The method for locating a grain in a fan-out process according to claim 1, wherein after the laser drilling step, a plating step and a circuit exposure step are further included. A production device for use in a fan-out process, wherein the fan-out process includes forming a package structure and a plurality of die embedded in a predetermined position of the package structure, and forming a laser drilling data according to the predetermined position and The laser drilling apparatus performs laser drilling, and the application device for the fan-out process comprises: an X-ray inspection mechanism, performing X-ray scanning on the package structure and the plurality of crystal grains embedded in the package structure And generating an X-ray scan image information, wherein the X-ray scan image information includes planar image information of positions of the plurality of crystal grains relative to the substrate, and each of the plurality of crystal grains at different depths is opposite to the package structure The depth image information of the embedded state; an image analysis mechanism, the signal is connected to the X-ray inspection mechanism, and the image analysis mechanism analyzes the actual position of each of the plurality of crystal grains and the package structure according to the X-ray scan image information a state of offset between the predetermined positions to obtain a grain offset state information; and a repositioning mechanism, the signal is connected to the Like analysts, the re-positioning mechanism according to the state grain information and offset correction of the laser drilling data. The production device for use in a fan-out process as claimed in claim 5, further comprising a laser drilling mechanism, wherein the signal is connected to the repositioning mechanism, and the laser drilling mechanism is based on the corrected laser drilling data. Perform laser drilling. The production device applied in the fan-out process as claimed in claim 6 further includes a laser exposure mechanism, and the signal is connected to the repositioning mechanism. The production apparatus for use in a fan-out process as claimed in claim 5, wherein the X-ray inspection mechanism is a 3DX ray inspection mechanism. A production apparatus for use in a fan-out process as claimed in claim 8, wherein the X-ray inspection mechanism comprises a digital micro mirror element.