TWI629353B - Receptor stripping solution - Google Patents

Abstract

The present invention relates to a resist stripping liquid; that is, in a manufacturing process of a semiconductor device or the like, hardening is performed at a temperature higher than before, and hardening of the resist is prevented. Therefore, a peeling liquid having a peeling force stronger than before is required.

A resist stripping liquid characterized by comprising a secondary amine, 1,3-dimethyl-2-imidazolidinone (DMI) as a polar solvent, and water, comprising a hydrazine as an additive, the aforementioned water system 10.0 The mass% or more and 31.0 mass% are not full, and the resist stripping liquid can peel off the high temperature baking resist, and does not cause corrosion on the film surface and the cross section.

Description

Resist stripper  

The present invention is for peeling off a stripping liquid which is used as a resist agent in the manufacture of a liquid crystal, an organic EL or the like, or a semiconductor, and more particularly, a resist film which can be cured even if it is hardened and baked. Moreover, even for the aluminum film and the copper film, it can be said that it is a resist stripping liquid which does not substantially corrode.

A flat panel display (FPD) such as liquid crystal or organic EL (Electro-Luminescence) requires a large screen. On the other hand, as a notebook PC, a desktop PC, and a smart phone, a small high-definition screen is required. A TFT (Thin Film Transistor) is used as the large-screen system (using Cu wiring or Cu/Mo laminated wiring (hereinafter, simply referred to as "Cu wiring"). In addition, TFTs (using Al wiring) are used as small-sized high-definition screens. Further, in the following, Cu is also referred to as copper, Mo is molybdenum, and Al is aluminum.

Among the panel manufacturers, in one factory, there is also a state in which TFTs using Cu wiring and TFTs of mixed Cu wiring and Al wiring are produced. If the resist stripping solution is shared by the stripping process of the resist film and the state in which the Al wiring is used and the state in which the Cu wiring is used in the state in which the TFTs of the mixed Cu wiring and the Al wiring are produced, the production cost can be reduced and device.

The stripping liquid for a positive resist of a water type is generally composed of an alkanolamine, a polar solvent, and water, and is heated and used in a resist stripping apparatus to a temperature of 40 ° C or more and 50 ° C or less.

The alkanolamine is a carbonyl group of a DNQ (diazonaphthoquinone) compound which becomes an alkali insolubilizing agent in a positive photoresist stripping solution by a nucleation action, and can be dissolved in a polar solvent and water. Become an essential ingredient. The alkanolamine is classified into the first, second and third stages by the number of substituents other than the hydrogen bonded to the nitrogen element. Among them, the smaller the number of stages is, the stronger the basicity is, and the stronger the nuclearity is.

Therefore, when the number of the alkanolamines is small, the strength of the DNQ compound which becomes an alkali insolubilizing agent can be melted in a polar solvent or water, and the strong agent peeling performance is exhibited.

On the other hand, it is known that an alkanolamine has chelation for Cu. For the chelation of Cu, Cu can be melted, and therefore, the Cu film is corroded. The chelation of Cu is the same as basic or nuclear, and the smaller the number of alkanolamines, the stronger the chelation. Therefore, as the alkanolamine having a small number is added, the Cu film is more strongly corroded.

In the case of amorphous yttrium (hereinafter, also referred to as "a-Si") or low-temperature polycrystalline yttrium (hereinafter, also referred to as "LTPS"), an oxide semiconductor (hereinafter, also referred to as "IGZO") The high-definition TFT manufacturing process of the semiconductor is performed in a dry etching process in which a resist is damaged to be denatured and the resist is not easily peeled off. This is considered to be due to the excessive polymerization between the DNQ compound constituting the positive resist film and the phenol resin.

The Al wiring system is not corroded by the alkanolamine (chelation). Therefore, the denatured resist is peeled off, and therefore, a monoalkanolamine having a strong peeling property is generally used.

On the other hand, in the state of the Cu wiring, when the primary or secondary alkanolamine is used, corrosion of many Cu wirings occurs to such an extent that it is unacceptable. Therefore, it is proposed to use a stripping solution of a tertiary alkanolamine. The tertiary alkanolamine system weakens the chelation of Cu, and can suppress the corrosion of the Cu film to the extent that there is no practical problem. However, the basic or nuclear-requiring system is also weakened by the same chelate, and the so-called resist peeling force is weakened compared to the resist stripping liquid using the primary or secondary alkanolamine.

In such a technical background, a resist stripping liquid composition is required, which has a peeling performance equivalent to or higher than that of a resist stripping liquid for Al wiring using a primary alkanolamine, and can be used for both Cu wiring and Al wiring.

Further, Patent Document 1 discloses a resist stripping liquid containing a compound and a solvent which are represented by the chemical formula (1). Such a resist stripping system can also be used in common for the resist stripping process of Cu wiring and Al wiring.

Further, Patent Document 2 discloses a resist stripping liquid which has a peeling force equivalent to that of a resist stripping liquid for Al wiring using a primary alkanolamine, regardless of whether or not a tertiary alkanolamine is used. The stripping liquid contains a tertiary amine, a polar solvent, water, a cyclic amine, a sugar alcohol, and a reducing agent, and the above-mentioned five-membered cyclic amine has a pyrrolidine or a pyrrolidine having a substituent at the 3-position.

 [Previous Technical Literature]    [Li literature]  

Patent Document 1: Japanese Laid-Open Patent Publication No. 2012-514765 (Japanese Patent No. 5297921)

Patent Document 2: JP-A-2016-085378 (Japanese Patent No. 5880410)

The stripping liquid of Patent Document 2 can be used in common for Cu wiring (including Cu/Mo laminated wiring) and a resist stripping process for Al wiring. Further, it is assumed that the resist film can be peeled off even if the resist film is subjected to hardening baking.

However, at the manufacturing site of the semiconductor device using the resist, the processing of the substrate of a larger scale is performed once. Therefore, the failure of the process of lithography in one time is related to a large number of defective products. Therefore, in the various processes of photolithography, in terms of safety, the operating parameters are used.

Specifically, in the hardening process of the resist, hardening at a higher temperature is performed to avoid the problem of poor curing of the so-called resist. However, at the same time, this system indicates that the peeling force is required to be stronger than the previous stripping solution.

The present invention has been conceived in view of the above problems, and provides a resist stripping liquid which can be peeled off even if it is a binder which is baked at a temperature higher than before. Needless to say, it goes without saying that not only is the peeling force becoming strong, but also the aspect of the corrosion of the metal called Cu, Mo and Al is lowered.

More specifically, the resist stripping solution of the present invention is characterized in that it comprises a secondary amine, 1,3-dimethyl-2-imidazolidinone (DMI) as a polar solvent, and water, and contains a hydrazine as a The additive is not more than 10.0% by mass and 31.0% by mass of the above-mentioned water system.

Since the resist stripping liquid of the present invention uses a secondary amine, the peeling can be surely performed even if the resist is baked at a temperature higher than before. Further, the resist stripping liquid of the present invention contains 1,3-dimethyl-2-imidazolidinone (DMI) as a polar solvent, and therefore inhibits so-called Cu or Mo, Al regardless of whether or not a secondary amine is contained. Corrosion of metal.

Further, in the resist stripping liquid of the present invention, a high-boiling secondary amine is used, and therefore, it can be recycled after use.

Further, the resist stripping liquid of the present invention has a good bath life, and even if it is left in the open state for 12 hours or more, the resist stripping ability is not changed even if it is sealed for 4 days.

1‧‧‧Substrate

2‧‧‧Mouth Department

3‧‧‧ basal layer

4‧‧‧ (film part) surface

5‧‧‧ cone angle

10‧‧‧(between the Mo layer and the Cu layer of the substrate)

Fig. 1 is a view showing the taper angle of the Cu/Mo laminated film and the undercut of Mo.

Hereinafter, the resist stripping liquid of the present invention will be described. In addition, the following description shows an embodiment of the photoresist stripping liquid of the present invention, and the following embodiments and examples can be changed without departing from the spirit of the invention. In addition, in the present specification, the terms "above" and "below" when used in the scope of the expression mean the meaning of "including the value is larger" and "including the value is smaller", and "underfill" is the so-called The meaning of "not including its value and being small".

The peeling resist film of the resist stripping solution of the present invention is assumed to be a positive resist. In the positive resist, a phenolic resin as a resin is used, and a diazo naphthoquinone (DNQ) compound is used as a sensitizer. In the state where etching is performed, a resist film is formed on the substrate, and the pattern is exposed to light.

The DNQ compound was changed by this exposure to become ketene. When the ketene is combined with water, it becomes a hydrazine carboxylic acid and is dissolved in water. The phenolic resin originally has a property of being dissolved in an alkali solution, and the dissolution point is protected by the DNQ compound. The DNQ compound is degraded by exposure, dissolved in a developing solution containing water, and a phenolic resist is also eluted. Patterning of the resist film is completed as such.

The substrate which is patterned by the resist film is subjected to post-baking to perform wet etching or dry etching. The post-baking is carried out in order to carry out polymerization of a phenolic resin and a DNQ compound in a certain resist film. The heat treatment is usually carried out at 140 ° C for about 5 minutes. In the present specification, the term "hardening baking" means heating at 170 ° C for 30 minutes or longer. When the baking temperature is raised, the phenol resin and the DNQ compound are rapidly polymerized and firmly adhered to the metal film of the substrate, and are not easily dissolved. The resist stripping liquid of the present invention is also targeted by a resist film which is hardened and baked like this.

The resist stripping solution of the present invention comprises a secondary amine, a polar solvent and a reducing agent. As the secondary amine, the boiling point is higher than that of water, and it is preferred that no azeotrope is present in the water. Because it is separated from water at the time of recycling the stripping solution. As such a system, N-methylethanolamine (hereinafter, also referred to as "MMA", boiling point of 155 ° C. CAS No. 109-83-1), N-ethylethanolamine (hereinafter, also referred to as "MMA") It is "EEA" and has a boiling point of 170 ° C. CAS No. 110-73-6). These lines can be mixed.

In addition, the total amount of the peeling liquid is preferably 0.5% by mass or more and 9.0% by mass or less, more preferably 1.0% by mass or more and 8.0% by mass or less, and most preferably 2.0% by mass or more and 7.0% by mass or less. When the secondary amine is reduced, the hardening baked resist film cannot be peeled off. On the other hand, when there is too much, the metal damage will become large. Further, as a performance, it was confirmed that even if it contained 9.0% by mass, there was no problem with the required performance.

The polar solvent may be any organic solvent (also referred to as a water-soluble organic solvent) having affinity with water. Further, it is more suitable if the mixing property with the aforementioned secondary amine is good.

As such a water-soluble organic solvent system, 1,3-dimethyl-2-imidazolidinone (hereinafter also referred to as "DMI". CAS No. 80-73-9) can be suitably used. The polar solvent is composed of a water-soluble organic solvent and water.

The amount of the secondary amine and the reducing dose described later is removed as the polar solvent based on the total amount of the stripping solution. Specifically, it is 90.60% by mass or more and 99.47% by mass or less.

The various materials in the polar solvent have the following desirable ranges. First, the water system is preferably 10.0% by mass or more and less than 31.0% by mass based on the total amount of the resist stripping liquid. Because in the case of excessive water, in the metal film In the state of Al, a problem called corrosion Al occurs. The 1,3-dimethyl-2-imidazolidinone (DMI) system can be a residue of a polar solvent. The 1,3-dimethyl-2-imidazolidinone (DMI) merely stabilizes the hydrazine by this, and alleviates the damage of the surface and the cross section of the metal film by the secondary amine and the hydrazine.

As the additive, a hydrazine of a reducing agent (hereinafter also referred to as "HN". CAS No. 302-01-2) can be suitably used. The addition of a reducing agent inhibits the undercut of Mo due to the secondary amine. The reducing agent is preferably in a range of 0.03 mass% or more and 0.4 mass% or less based on the total amount of the resist stripper. The range of 0.06 mass% or more and 0.2 mass% or less is more preferable. Further, from the viewpoint of safe treatment, a hydrate (a hydrazine-hydrate: "HN.H ₂ O") can be used as the hydrazine.

Example

Hereinafter, examples and comparative examples of the resist stripping liquid of the present invention are shown. The resist stripping solution was evaluated in terms of "resistance peelability", "corrosion of metal film", and "liquid bath life".

<Resistance stripping>

On the tantalum substrate, a thermal oxide film of 100 nm was formed, and a copper film having a thickness of 300 nm was formed on the thermal oxide film of tantalum by sputtering. On the copper film, a positive resist liquid was applied by spin coating to form a resist film. After the resist film is dried, exposure is performed using a mask of the wiring pattern. Next, the photosensitive portion of the resist is removed by the developer. In other words, it is a portion of the resist film that remains on the copper film and has a portion in which the copper film is exposed. Then, at 170 ° C, the entire substrate was subjected to post-baking for 30 minutes.

Next, the exposed copper film is etched and removed using a hydrolyzed copper etchant. After the etching of the copper film is finished, the resist film of the residual copper pattern is peeled off using the sample resist stripper. The treatment time for peeling was 15 minutes, and the time until peeling was measured. The interference is applied by an optical microscope that can be peeled off, and observation is performed at the same time.

In the state where the residue of the resist film is confirmed on the copper film even after 15 minutes, it is "x" (poor.), and in the state where the residue of the non-resist film is confirmed, it becomes "○" (circle. good). In this state, the completion time of the peeling is also recorded. In addition, "○" (circle. good) indicates success or pass, and "x" (fork. bad) indicates failure or failure. Even in the following evaluations, the same.

 <Corrosion of metal film>  

The corrosiveness of the metal film was evaluated as follows. First, a thermal oxide film having a thickness of 100 nm was formed on the tantalum substrate. Next, a molybdenum film was formed on the tantalum thermal oxide film on the tantalum substrate at a thickness of 20 nm, and a copper film was formed thereon at a thickness of 300 nm to prepare a Cu/Mo laminated film sample. This system is described as "Cu/Mo". Further, an aluminum film was formed on the thermal oxide film of tantalum on the tantalum substrate at a thickness of 300 nm to prepare an aluminum film sample. This department is described as "Al".

On these evaluation samples, a resist which was patterned in a wiring shape was formed, and it became a base material for corrosion evaluation. That is, the substrate for corrosion evaluation is any one of a Cu/Mo film and an Al film formed on a thermal oxide film of tantalum formed on a tantalum substrate, and a resist layer formed in a wiring shape thereon. And composed.

The substrate for corrosion evaluation is immersed in an etching agent for a copper film or an aluminum film at an appropriate amount of etching time for etching. Then, the sample resist stripping solution was immersed in the substrate for corrosion evaluation after etching for 4 minutes to peel off the resist film. The substrate for corrosion evaluation was immersed in the sample resist stripping solution for 4 minutes, washed, and after drying, the surface of the film was observed. Further, the wiring portion was cut and the cut surface was observed.

Further, the judgment of the appropriate amount of etching is from the start of etching to the point in time at which the thermal oxide film of the crucible can be visually confirmed.

The observation of the film surface and the cut surface was carried out by using an SEM (Scanning Electron Microscope) (SU8020 type manufactured by Hitachi, Ltd.) under the conditions of an acceleration voltage of 1 kV and 30,000 to 50,000 times.

In Fig. 1, a conceptual diagram of the shape of the cut surface is shown. In Fig. 1(a), the state of the cut surface in the state of "Al" is displayed. The shape of the cut surface of the portion which is appropriately etched is formed into a taper angle 5 which is an angle of about 30 or even 60 with respect to the substrate 1. The film portion 2 is an Al film.

In Fig. 1(b), the state of "Cu/Mo" is displayed. The state of "Cu/Mo" is that at least the film portion 2 (Cu) of the upper layer has a taper angle of 5. The base layer 3 (Mo) is preferably etched along the tapered surface 6 of the film portion 2. However, as shown in Fig. 1(b), the etching residue can be started from the film portion 2.

The evaluation of the corrosivity is judged to be a fork in the state where the corrosion of the film portion 2, the surface 4 of the film portion 2, or the base layer 3 is confirmed by observation of the cross-sectional shape. Bad (×), judged to be round in the state where no corrosion is observed. Good (○).

In particular, in the state of "Cu/Mo", as shown in Fig. 1(c), corrosion occurs between the underlayer 3 (Mo) and the film portion 2 (Cu). That is, Mo which dissolves the underlying layer 3 from the interface between the film portion 2 and the underlying layer 3 selectively causes Mo (base layer 3) to be etched more rapidly than the copper layer (film portion 2). Therefore, in the state where the gap 10 can be confirmed between the base layer 3 and the film portion 2, the evaluation becomes a fork. Bad (×).

 <Liquid bath life>  

The resist stripping liquid is a mixed composition of a material of an amine, an organic solvent, and a so-called reducing agent. The carbon dioxide in the air is dissolved in the stripping solution and becomes carbonic acid. Heavy carbonate ions, or react with amines to form formic acid amine ions, as a result, reduce peeling force, or increase metal damage.

Especially in large-scale factories, a large number of resist strippers are used in an open atmosphere. Further, the resist stripping liquid is used cyclically, and therefore, the chance of the resist stripping liquid meeting with the air becomes large. Therefore, when the bath life becomes short, the resist stripping liquid must be frequently replaced or replenished.

As a test method, after the respective resist stripping liquids were prepared, they were allowed to stand for 0 hours, 6 hours, and 12 hours in a normal temperature atmosphere, and a resist stripping test was performed to observe "Cu/Mo" by SEM. The surface and cross-section of "Al". The evaluation method is the same as the case of <resist stripping property> and <corrosion of metal>.

In addition, the resist stripping solution is placed in a container for carrying in. However, if it is not stored in a container at normal temperature, the operational suitability at the factory is extremely poor. Therefore, the investigation is also carried out by changing the components stored in the sealed room temperature.

The evaluation method was placed in a closed container and allowed to stand at room temperature for 4 days to determine the stability of the hydrazine. When the hydrazine is prepared, the state in which the hydrazine is reduced is 1% or more is "x", and if it is less than 1%, it is "○".

<sample resist stripping solution>

The sample resist stripper was prepared by the following method.

(Example 1)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping liquid of Example 1 was mixed and stirred.

Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass. In all of the following examples and comparative examples, the state in which the hydrazine-hydrate is used is the same.

(Example 2)

N-ethylethanolamine (N-ethylethanolamine (EEA): 5.0% by mass) was used as a secondary amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping liquid of Example 2 was mixed and stirred.

Example 2 is to change the N-methyl group as the secondary amine of Example 1. Ethanolamine (MMA) is a component of N-ethylethanolamine (EEA). Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Example 3)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 70.9% by mass, water: 24.0% by mass). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Example 3 was mixed and stirred.

Example 3 is a modification of the composition of the ratio of DMI to water of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 24.036% by mass.

(Example 4)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 68.9 mass%, water: 26.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Example 4 was mixed and stirred.

Example 4 is a modification of the composition of the ratio of DMI to water of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 26.036% by mass.

(Example 5)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 66.9 mass%, water: 28.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Example 5 was mixed and stirred.

Example 5 is a modification of the composition of the ratio of DMI to water of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 28.036% by mass.

(Example 6)

N-methylethanolamine (N-methylethanolamine (MMA): 2.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 73.9 mass%, water: 24.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Example 6 was mixed and stirred.

Example 6 is a composition which reduces the amount of the secondary amine of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 24.036% by mass.

(Example 7)

N-methylethanolamine (N-methylethanolamine (MMA): 3.0% by mass) was used as a secondary amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 72.9% by mass, water: 24.0% by mass). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Example 7 was mixed and stirred.

Example 7 is a composition which reduces the amount of the secondary amine of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 24.036% by mass.

(Example 8)

N-methylethanolamine (N-methylethanolamine (MMA): 4.0% by mass) was used as a secondary amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 71.9% by mass, water: 24.0% by mass). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Example 8 was mixed and stirred.

Example 8 is a reduction in the composition of the amount of the secondary amine of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 24.036% by mass.

(Example 9)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 70.9% by mass, water: 24.0% by mass). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Example 9 was mixed and stirred.

Example 9 is the same amount of composition as the amount of the secondary amine of Example 1. However, it differs from the amount of water of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 24.036% by mass.

(Embodiment 10)

N-methylethanolamine (N-methylethanolamine (MMA): 6.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 69.9 mass%, water: 24.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Example 10 was mixed and stirred.

Example 10 is an increase in the composition of the amount of the secondary amine of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 24.036% by mass.

(Example 11)

N-methylethanolamine (N-methylethanolamine (MMA): 7.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 68.9 mass%, water: 24.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Example 11 was mixed and stirred.

Example 11 is an increase in the composition of the amount of the secondary amine of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 24.036% by mass.

(Comparative Example 1)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and N-methylformamide (N-methylformamide (NMF: CAS No. 123-39-7): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping liquid of Comparative Example 1 was mixed and stirred.

Comparative Example 1 was changed to the composition of N-methylformamide (NMF) by changing the 1,3-dimethyl-2-imidazolidinone (DMI) of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 2)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and N,N-dimethylformamide (N,N-dimethylformamide (DMF: CAS No. 68-12-2): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping liquid of Comparative Example 2 was mixed and stirred.

Comparative Example 2 was changed to the composition of N,N-dimethylformamide (DMF) by changing the 1,3-dimethyl-2-imidazolidinone (DMI) of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 3)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 2-pyrrolidone (2-pyrrolidone (2P: CAS No. 616-45-5): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist peeling liquid of Comparative Example 3 was mixed and stirred.

Comparative Example 3 was changed to the composition of 2-pyrrolidone (2P) by changing the 1,3-dimethyl-2-imidazolidinone (DMI) of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 4)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1-methyl-2-pyrrolidone (1-methyl-2-pyrrolidone (NMP: CAS No. 872-50-4): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping liquid of Comparative Example 4 was mixed and stirred.

Comparative Example 4 was changed to the composition of 1-methyl-2-pyrrolidone (NMP) by changing the 1,3-dimethyl-2-imidazolidinone (DMI) of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 5)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and NEP (1-ethyl-2-pyrrolidone (NEP: CAS No. 2687-91-4): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping liquid of Comparative Example 5 was mixed and stirred.

Comparative Example 5 was changed to the composition of 1-ethyl-2-pyrrolidone (NEP) by changing the 1,3-dimethyl-2-imidazolidinone (DMI) of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 6)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. Polar solvent-mixed water and γ-butyrolactone (γ-butyrolactone (GBL: CAS No. 96-48-0): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Comparative Example 6 was mixed and stirred.

Comparative Example 6 was changed to the composition of γ-butyrolactone (GBL) by changing the 1,3-dimethyl-2-imidazolidinone (DMI) of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 7)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and ethylene carbonate (ethylene carbonate (EC: CAS No. 96-49-1): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping liquid of Comparative Example 7 was mixed and stirred.

Comparative Example 7 was changed to the composition of ethylene carbonate (EC) by changing the 1,3-dimethyl-2-imidazolidinone (DMI) of the polar solvent of Example 1. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 8)

N-methyldiethanolamine (N-methyldiethanolamine (MDEA: CAS No. 105-59-9): 5.0% by mass) of a tertiary amine was used as the amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (DMI: 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Comparative Example 8 was mixed and stirred.

Comparative Example 8 was a composition in which N-methylethanolamine (MMA) of the secondary amine of Example 1 was changed to become a tertiary amine N-methyldiethanolamine (MDEA). Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the aforementioned water is included as a part of the hydrazine-hydrate input, and it can be said that 20.036% by mass.

(Comparative Example 9)

A pyrrolidine (pyrrolidine (PRL: CAS No. 123-75-1): 1.5% by mass) of a cyclic amine was used as an amine. The polar solvent-based mixed water and DMI (1,3-dimethyl-2-imidazolidinone (DMI): 78.4% by mass, water: 20.0% by mass). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Comparative Example 9 was mixed and stirred.

Comparative Example 9 was a composition in which the N-methylethanolamine (MMA) of the secondary amine of Example 1 was changed to be a pyrrolidine (PRL) of a cyclic amine. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 10)

Hydroxyethylpiperazine (hydroxyethylpiperazine (OH-PIZ: CAS No. 103-76-4): 5.0% by mass) of a cyclic amine was used as an amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The mixture was stirred and stirred to obtain a sample resist stripping solution of Comparative Example ^- 10.

Comparative Example 10 is a composition which changes the N-methylethanolamine (MMA) of the secondary amine of Example 1 to form a cyclic amine hydroxyethylpiperazine (OH-PIZ). In addition, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064 mass of the hydrazine. %. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 11)

Monoethanolamine (monoethanolamine (MEA: CAS No. 141-43-5): 5.0% by mass) using a primary amine was used as the amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 74.9 mass%, water: 20.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Comparative Example 11 was mixed and stirred.

Comparative Example 11 is a composition which changes the N-methylethanolamine (MMA) of the secondary amine of Example 1 to become a primary amine monoethanolamine (MEA). Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 20.036% by mass.

(Comparative Example 12)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 75.0% by mass, water: 20.0% by mass). No reducing agent was added. The sample resist stripping liquid of Comparative Example 12 was mixed and stirred. Comparative Example 12 is a composition in which the hydrazine (HN) of the reducing agent of Comparative Example 1 was removed.

(Comparative Example 13)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 74.5 mass%, water: 20.0 mass%). Sorbitol was used as an additive (sorbitol (Stol: CAS No. 50-70-4): 0.5% by mass). The sample resist stripping solution of Comparative Example 13 was mixed and stirred. Comparative Example 13 was a composition in which the additive of Example 1 (reducing agent: hydrazine (HN)) was changed to become sorbitol.

(Comparative Example 14)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 74.5 mass%, water: 20.0 mass%). Diglycerin was used as an additive (diglycerol (CAS No. 627-82-7): 0.5% by mass). The sample resist stripping solution of Comparative Example 14 was mixed and stirred. Comparative Example 14 was a composition in which the additive of Example 1 (reducing agent: hydrazine (HN)) was changed to become diglycerin.

(Comparative Example 15)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 74.5 mass%, water: 20.0 mass%). Saccharin was used as an additive (saccharin (CAS No. 81-07-2): 0.5% by mass). The sample resist stripping liquid of Comparative Example 15 was mixed and stirred. In Comparative Example 15, the additive of Example 1 (reducing agent: hydrazine (HN)) was changed to become a composition of saccharin.

(Comparative Example 16)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. The polar solvent-based mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 74.5 mass%, water: 20.0 mass%). Polyethylene glycol 400 was used as an additive (PEG400) (polyethylene glycol 400 (PEG400: CAS No. 25322-68-3): 0.5% by mass). The sample resist stripping solution of Comparative Example 16 was mixed and stirred. Comparative Example 16 was changed to the composition of Example 1 (reducing agent: hydrazine (HN)) to form a composition of polyethylene glycol 400.

(Comparative Example 17)

N-methylethanolamine (N-methylethanolamine (MMA): 5.0% by mass) was used as a secondary amine. Polar solvent-mixed water and 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone (DMI): 63.9 mass%, water: 31.0 mass%). A hydrazine was used as a reducing agent (amine-hydrate (HN.H ₂ O): 0.1% by mass). The sample resist stripping solution of Comparative Example 17 was mixed and stirred.

Comparative Example 17 is a composition in which the amount of water of Example 1 was increased from 20.0% by mass to 31.0% by mass. Further, 0.1% by mass of the hydrazine-hydrate corresponds to 0.064% by mass of the hydrazine. The 0.036% by mass of the residue of the hydrazine-hydrate is water. Therefore, the composition ratio of the water described above is included as a portion of the hydrazine-hydrate input, and it can be said to be 31.036 mass%.

In Table 1, the compositions and evaluation results of Example 1 and Comparative Examples 1 to 7 are shown. Further, in Table 2, the compositions and evaluation results of Examples 1 and 2 and Comparative Examples 8 to 11 are shown. Further, in Table 3, the compositions and evaluation results of Example 1 and Comparative Examples 12 to 16 are shown. Further, in Table 4, the compositions and evaluation results of Examples 1, 3 to 5 and Comparative Example 17 are shown. Further, in Table 5, the compositions and evaluation results of Examples 6 to 11 are shown.

In Table 1, the compositions and evaluation results of Example 1 and Comparative Examples 1 to 7 are shown. Refer to Example 1. By using a secondary amine N-methylethanolamine (MMA) as an amine, 1,3-dimethyl-2-imidazolidinone (DMI) can be used as a mixture of a polar solvent and water. The resist which was baked at 170 ° C for 30 minutes was peeled off within 4 minutes. In addition, the film damage system of "Cu/Mo" and "Al" also became good.

Further, the liquid bath life at the time of placing the stripping liquid in the open state of the atmosphere does not change the peeling force even after 12 hours have elapsed. Further, even if it was kept in a sealed state for 4 days, no decrease in the hydrazine was observed.

Comparative Example 1 used N-methylformamide (NMF) in place of the 1,3-dimethyl-2-imidazolidinone (DMI) of the polar solvent of Example 1.

Comparative Example 2 used N,N-dimethylformamide (DMF) instead of DMI.

In Comparative Example 3, 2-pyrrolidone (2P) was used instead of DMI.

In Comparative Example 4, 1-methyl-2-pyrrolidone (NMP) was used instead of DMI.

Comparative Example 5 used 1-ethyl-2-pyrrolidone (NEP) instead of DMI.

Comparative Example 6 used γ-butyrolactone (GBL) instead of DMI.

In Comparative Example 7, ethylene carbonate (EC) was used instead of DMI.

In Comparative Example 1, the peeling property immediately after the preparation was carried out, and the peeling was favorably performed. However, when placed in the atmosphere, damage occurs on the cross section and surface of "Cu/Mo". In addition, a decrease in hydrazine was observed in a closed position on the 4th.

Comparative Example 2 is also about the peelability immediately after the modulation, which is good. Peel off well. However, after being placed in the atmosphere, damage occurred on the cross section and surface of "Cu/Mo" after 12 hours. In addition, a decrease in hydrazine was observed in a closed position on the 4th.

In Comparative Example 3, the problem of damage to the metal film did not occur immediately after the peeling property immediately after the preparation and after standing for 12 hours in the atmosphere. However, in the closed position on the 4th day, a decrease in hydrazine was observed.

In Comparative Example 4, the problem of damage to the metal film did not occur immediately after the peeling property immediately after the preparation and after standing for 12 hours in the atmosphere. However, in the closed position on the 4th day, a decrease in hydrazine was observed.

In Comparative Example 5, the problem of damage to the metal film did not occur immediately after the peeling property immediately after the preparation and after standing for 12 hours in the atmosphere. However, in the closed position on the 4th day, a decrease in hydrazine was observed.

In Comparative Example 6, the peeling property immediately after the preparation was carried out, and the peeling was performed satisfactorily. However, damage occurred in the section and surface of "Cu/Mo". Therefore, no test was conducted regarding the bath life.

In Comparative Example 7, the resist film which was subjected to hardening baking immediately after the preparation was not peeled off. Therefore, no test was conducted regarding the bath life.

As above, the N-methylethanolamine (MMA) of the secondary amine of Example 1 was used and a mixture of 1,3-dimethyl-2-imidazolidinone (DMI) and water, which is only a polar solvent, was used and contained The hydrazine stripping solution gave good results with respect to the peeling ability and the bath life.

In Table 2, the compositions and evaluation results of Examples 1 and 2 and Comparative Examples 8 to 11 are shown. Embodiment 1 is disclosed again, and therefore, Embodiment 1 is shown by brackets. Example 2 is a state in which a secondary amine is substituted to become N-methylethanolamine (MMA) and N-ethylethanolamine (EEA) is used. In Example 2, the peeling force, the damage to the metal, and the bath life were the same as in Example 1, and it became good.

Comparative Examples 8 to 11 changed the state of the amine. In Comparative Example 8, N-methyldiethanolamine (MDEA) of a tertiary amine was used as an amine. Further, in Comparative Example 9, the state of pyrrolidine (PRL) of a cyclic amine was used, and in Comparative Example 10, the state of hydroxyethylpiperazine (OH-PIZ) of a cyclic amine was used. Comparative Example 11 is an example of a monoethanolamine (MEA) using a primary amine.

Comparative Examples 8, 9, and 10 were incapable of peeling off the hardening baking resist. Therefore, no test was conducted regarding the bath life. In addition, the primary amine monoethanolamine (MEA) can be used to remove the hardening baking agent immediately after preparation, but it causes damage on the surface and cross section of "Cu/Mo". Therefore, even with respect to Comparative Example 11, no test was conducted on the life of the liquid bath.

In Table 3, the compositions and evaluation results of Example 1 and Comparative Examples 12 to 16 are shown. Embodiment 1 is disclosed again, and therefore, Embodiment 1 is shown by brackets. Comparative Example 12 was a composition without the addition of a hydrazine (a hydrazine-hydrate (HN.H ₂ O)). Comparative Example 12 is a resist which can be peeled off and hardened immediately after preparation. However, film damage of "Cu/Mo" occurred.

Comparative Example 13 was added with sorbitol (Stol) as an additive. Further, Comparative Example 14 was added with diglycerin as an additive. Comparative Example 13 and Comparative Example 14 were incapable of peeling off the resist which was immediately subjected to hardening baking after preparation.

Comparative Example 15 was added with saccharin as an additive. Further, Comparative Example 16 was added to polyethylene glycol 400 (PEG400) as an additive. In Comparative Example 15 and Comparative Example 16, a resist which was subjected to hardening baking immediately after the preparation was prepared. However, both comparative examples were in the "Cu/Mo" section and were damaged.

From the above, it can be said that hydrazine (a hydrazine-hydrate (HN.H ₂ O)) is a material necessary for the stripping liquid of the present invention.

In Table 4, the compositions and evaluation results of Examples 1, 3 to 5 and Comparative Example 17 are shown. Embodiment 1 is disclosed again, and therefore, Embodiment 1 is shown by brackets. Table 4 reviews the amount of water. In Example 3, the moisture content was 24.0% by mass, the water content in Example 4 was 26.0% by mass, and the water content in Example 5 was 28.0% by mass. On the other hand, Comparative Example 17 increased the moisture content to 31.0% by mass.

The other components are the same as in the first embodiment. Therefore, with regard to the peeling force and the bath life, no problem occurs in any of the sample systems. However, Comparative Example 17 in which the amount of water was increased to 31.0% by mass was caused by corrosion on the surface and the fracture surface of "Al". From the above, it is known that the water content is required to be 31.0% by mass or less.

In Table 5, the compositions and evaluation results of Examples 6 to 11 are shown. Examples 6 to 11 are to examine the amount of amine. The water amount was all consistently 24.0% by mass. In addition, the arrangement of the tables is based on the amount of amine being less than the amount of amine. Example 6 was 2.0% by mass of N-methylethanolamine (MMA), 3.0% by mass of Example 7, and 4.0% by mass of Example 8. These compositions are smaller in composition ratio (5.0% by mass) than N-methylethanolamine (MMA) of Example 1, and have a small amine composition. Further, the amount of the amine of Example 9 was the same as the composition ratio of the MMA of Example 1, and was 5.0% by mass.

In Example 10, N-methylethanolamine (MMA) was 6.0% by mass, and Example 11 was in a state of 7.0% by mass of N-methylethanolamine (MMA). In Example 10 and Example 12, the amount of N-methylethanolamine (MMA) was more than that of Example 1.

The sample of any of Examples 6 to 11 shown in Table 5 was also excellent in the same manner as in Example 1 regarding the peeling force, the damage to the metal surface, and the bath life. In other words, even if N-methylethanolamine (MMA) is prepared to have a high concentration of 7.0% by mass, there is no problem in performance. That is to say, in the composition of the present invention, even if the amine is deviated from the prescribed blending ratio, there is no problem in performance.

 [Industrial Availability]  

The resist stripping liquid of the present invention can particularly effectively peel off the hardening and baking resist, and can be suitably used in the case of using a photoresist.

Claims (1)

A resist stripping liquid which is a resist stripping liquid which is obtained by peeling off a resist agent, and is characterized in that it is a secondary amine of 0.5% by mass or more and 9.0% by mass or less, a hydrazine of 0.03% by mass or more and 0.4% by mass or less, and 10.0. Water having a mass % or more and less than 31.0% by mass, and a residual 1,3-dimethyl-2-imidazolidinone (DMI).