TWI626326B - Evaporation and deposition system equipped with diffusion apparatus - Google Patents

Evaporation and deposition system equipped with diffusion apparatus Download PDF

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TWI626326B
TWI626326B TW105136871A TW105136871A TWI626326B TW I626326 B TWI626326 B TW I626326B TW 105136871 A TW105136871 A TW 105136871A TW 105136871 A TW105136871 A TW 105136871A TW I626326 B TWI626326 B TW I626326B
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thermal cracking
diffusion
chamber
parylene
vapor deposition
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TW201817901A (en
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陳泰宏
張均豪
林昆蔚
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財團法人工業技術研究院
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Abstract

一種蒸鍍系統,包括一蒸發裝置,用以蒸發有機材料以形成一汽化氣體;一熱裂解裝置,連接該蒸發裝置,加熱並持溫用以熱裂解進入熱裂解裝置的汽化氣體,以形成有機材料單體;一鍍膜腔體,連接熱裂解裝置,前述有機材料單體料進入鍍膜腔體以進行鍍膜;和一擴散裝置,位於熱裂解裝置中,擴散裝置包括具有複數個孔洞之一擴散噴頭與一擋片組合的至少其中一種。 An evaporation system comprising an evaporation device for evaporating organic material to form a vaporized gas; a thermal cracking device connected to the evaporation device, heating and holding temperature for thermally cracking the vaporized gas entering the thermal cracking device to form an organic a material monomer; a coating chamber connected to the thermal cracking device, the organic material monomer material entering the coating cavity for coating; and a diffusion device located in the thermal cracking device, the diffusion device comprising a diffusion nozzle having a plurality of holes At least one of the combination with a baffle.

Description

具擴散裝置之蒸鍍系統 Evaporation system with diffusion device

本發明是有關於一種蒸鍍系統,且特別是有關於一種具有擴散裝置之蒸鍍系統,可降低材料的蒸鍍流速與改善鍍膜均勻度。 The present invention relates to an evaporation system, and more particularly to an evaporation system having a diffusion device that reduces the vapor deposition flow rate of the material and improves the uniformity of the coating.

近年來,隨著3C產品蓬勃的發展,許多電子元件皆趨向於微小化,因此傳統製作電子元件絕緣層之方法皆需隨著電子元件微小化而改變作法。以聚對二甲苯(Parylene)薄膜為例,其為此世代下最常被使用於製作絕緣層之材料。Parylene薄膜需於真空腔體內鍍製,其鍍製的原理為白色粉末起始原料二聚物雙體於真空150℃蒸發室昇華成氣態後,即進入650℃熱裂解室形成單體形式,最後再將單體導入於常溫(25℃)製程腔體,於基板上聚合成Parylene薄膜。Parylene具有許多良好的特色,如鍍膜環境為室溫、鍍膜後無殘留應力的發生、可精密的控制沉積薄膜厚度與均勻性、抗酸抗鹼、介電特性良好及無色高透明度等,因此被廣泛應用於印刷電路板之電性隔絕、感測器或醫療儀器的防潮保護、以及金屬鍍膜的防蝕等,室溫鍍膜的特性使Parylene成為可配搭光阻犧牲層的結構鍍膜材料。 In recent years, with the vigorous development of 3C products, many electronic components tend to be miniaturized. Therefore, the conventional methods for fabricating electronic component insulating layers need to be changed as the electronic components are miniaturized. For example, a parylene film is most commonly used for making insulating layers for this generation. The Parylene film needs to be plated in a vacuum chamber. The principle of the plating is that the white powder starting material dimer double body is sublimated into a gaseous state in a vacuum chamber at 150 ° C, and then enters the 650 ° C thermal cracking chamber to form a monomer form. Then, the monomer was introduced into a normal temperature (25 ° C) process chamber, and polymerized into a Parylene film on the substrate. Parylene has many good features, such as room temperature, no residual stress after coating, precise control of deposited film thickness and uniformity, acid and alkali resistance, good dielectric properties, colorless and high transparency, etc. Widely used in the electrical isolation of printed circuit boards, moisture protection of sensors or medical instruments, and corrosion protection of metal coatings. The characteristics of room temperature coating make Parylene a structural coating material that can be used with a photoresist sacrificial layer.

Parylene鍍膜係將高溫裂解後的單體於真空沉積室 中以有機聚合方式成膜,若單體濃度過高導致流速較快易產生白化氣相成核之現象,此亦造成鍍膜均勻度不佳之現象,此與蒸鍍源之流場行為息息相關。傳統的解決方式僅於前段蒸發裝置減少Parylene投粉量,使Parylene蒸氣量變小,進而使其單體濃度減量流速降低,達到改善Parylene成膜氣相成核白化問題,不過此手法衍生問題為整體鍍膜速率大幅下降,產率會受限於Parylene投粉量的多寡,此對於產品量產是一大隱憂。 Parylene coating is a high temperature cracking monomer in a vacuum deposition chamber In the organic polymerization mode, if the monomer concentration is too high, the flow rate is faster and the whitening gas phase nucleation is easy to occur, which also causes the coating uniformity to be poor, which is closely related to the flow field behavior of the evaporation source. The traditional solution is to reduce the amount of Parylene powder in the front evaporating device, to reduce the amount of Parylene vapor, and to reduce the flow rate of the monomer concentration, thereby improving the nucleation and whitening of the Parylene film. However, the problem of the method is the whole. The coating rate is greatly reduced, and the yield is limited by the amount of Parylene powder. This is a big concern for mass production.

本發明係有關於一種具有擴散裝置之蒸鍍系統,可降低有機材料的蒸鍍流速與改善鍍膜均勻度,以有效改善有機材料氣相成核白化現象及使蒸鍍氣體達到擴散均勻化之效果,進而改善鍍膜產品性質。 The invention relates to an evaporation system with a diffusion device, which can reduce the evaporation flow rate of the organic material and improve the uniformity of the coating, so as to effectively improve the gas phase nucleation whitening phenomenon of the organic material and achieve the effect of uniform diffusion of the vapor deposition gas. To improve the properties of the coated product.

根據一實施例,係提出一種蒸鍍系統,包括一蒸發裝置,用以蒸發有機材料以形成一汽化氣體;一熱裂解裝置,連接該蒸發裝置,加熱並持溫用以熱裂解進入熱裂解裝置的汽化氣體,以形成有機材料單體;一鍍膜腔體,連接熱裂解裝置,前述有機材料單體料進入鍍膜腔體以進行鍍膜;和一擴散裝置,位於熱裂解裝置中,擴散裝置至少包括具有複數個孔洞之一擴散噴頭。 According to an embodiment, an evaporation system is provided, comprising an evaporation device for evaporating organic material to form a vaporized gas; a thermal cracking device connected to the evaporation device, heated and held for thermal cracking into the thermal cracking device a vaporized gas to form an organic material monomer; a coating chamber connected to the thermal cracking device, the organic material monomer material entering the coating cavity for coating; and a diffusion device located in the thermal cracking device, the diffusion device including at least A diffusion nozzle having a plurality of holes.

根據一實施例,再提出一種蒸鍍系統,包括一蒸發裝置,用以蒸發有機材料以形成一汽化氣體;一熱裂解裝置,連接該蒸發裝置,加熱並持溫用以熱裂解進入熱裂解裝置的汽化氣體,以形成有機材料單體;一鍍膜腔體,連接熱裂解裝置,前述有機材料單體料進入鍍膜腔體以進行鍍膜;和一擴散裝置,位於 熱裂解裝置中,擴散裝置包括具有複數個孔洞之一擴散噴頭與一擋片組合的至少其中一種。 According to an embodiment, an evaporation system is further provided, including an evaporation device for evaporating organic material to form a vaporized gas; a thermal cracking device connected to the evaporation device, heated and held for thermal cracking into the thermal cracking device a vaporized gas to form an organic material monomer; a coating chamber connected to the thermal cracking device, the organic material monomer material entering the coating cavity for coating; and a diffusion device located at In the thermal cracking apparatus, the diffusing means includes at least one of a diffusion nozzle having a plurality of holes and a shutter combination.

為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式,作詳細說明如下。然而,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In order to better understand the above and other aspects of the present invention, the following detailed description of the embodiments and the accompanying drawings are set forth below. However, the scope of the invention is defined by the scope of the appended claims.

1‧‧‧蒸鍍系統 1‧‧‧ evaporation system

10‧‧‧蒸發裝置 10‧‧‧Evaporation unit

20‧‧‧熱裂解裝置 20‧‧‧Thermal cracker

202‧‧‧熱裂解室 202‧‧‧ Thermal cracking chamber

204‧‧‧加熱部 204‧‧‧heating department

AHeat‧‧‧加熱持溫區域 A Heat ‧‧‧heating temperature zone

30‧‧‧鍍膜腔體 30‧‧‧coating cavity

40‧‧‧擴散裝置 40‧‧‧Diffusion device

402‧‧‧擴散噴頭 402‧‧‧Diffusion nozzle

402h‧‧‧孔洞 402h‧‧‧ hole

40M‧‧‧基材 40M‧‧‧Substrate

402t‧‧‧上表面 402t‧‧‧ upper surface

402b‧‧‧下表面 402b‧‧‧ lower surface

405‧‧‧擋片組合 405‧‧‧Block combination

405a、405b、405c、405d、405e‧‧‧擋片 405a, 405b, 405c, 405d, 405e‧‧ ‧

第1圖係為本揭露一實施例之一蒸鍍系統之示意圖。 1 is a schematic view of an evaporation system according to an embodiment of the present disclosure.

第2圖為第1圖中圈選處之局部放大示意圖。 Figure 2 is a partial enlarged view of the circled portion in Figure 1.

第3圖為根據本揭露一實施例之蒸鍍系統中一種擴散裝置之示意圖。 3 is a schematic view of a diffusion device in an evaporation system according to an embodiment of the present disclosure.

第4圖為根據本揭露一實施例之一種擴散裝置設置於熱裂解室內之示意圖。 4 is a schematic view of a diffusing device disposed in a thermal cracking chamber according to an embodiment of the present disclosure.

第5A圖為實驗一中無擴散裝置之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的蒸鍍流體噴流濃度之分佈圖。 Fig. 5A is a distribution diagram of the vapor deposition fluid jet concentration after the Parylene organic vapor-deposited organic monomer vapor entering the coating chamber in the first experiment without the diffusion device.

第5B、5C圖為實驗一中無擴散裝置之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的流體速度分佈圖。 5B and 5C are fluid velocity distribution diagrams of Parylene organic vapor-deposited organic monomer vapor entering the coating chamber without diffusion device in Experiment 1.

第5D圖為根據實驗一而實際成膜之Parylene。 Fig. 5D is a graph of Parylene actually formed according to Experiment 1.

第6A圖為實驗二中僅設置擴散噴頭之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的蒸鍍流體噴流濃度之分佈圖。 Fig. 6A is a distribution diagram of the vapor deposition fluid jet concentration after the Parylene organic vapor-deposited organic monomer vapor of the diffusion nozzle is placed in the coating chamber in the second experiment.

第6B、6C圖為實驗二中僅設置擴散噴頭之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的流體速度分佈圖。 6B and 6C are fluid velocity distribution diagrams of the Parylene organic vapor-deposited organic monomer vapor which only provided the diffusion nozzle in the experiment 2 after entering the coating chamber.

第6D圖為根據實驗二而實際成膜之Parylene。 Fig. 6D is a graph of Parylene actually formed according to Experiment 2.

第7A圖為實驗三中僅設置擋片組合之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的蒸鍍流體噴流濃度之分佈圖。 Fig. 7A is a distribution diagram of the vapor deposition fluid jet concentration after the Parylene organic vapor-deposited organic monomer vapor is placed in the coating chamber in the third experiment.

第7B、7C圖為實驗三中僅設置擋片組合之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的流體速度分佈圖。 7B and 7C are fluid velocity distribution diagrams of the Parylene organic vapor-deposited organic monomer vapor which only sets the flap combination in the experiment 3 after entering the coating chamber.

第7D圖為根據實驗三而實際成膜之Parylene。 Fig. 7D is a graph of Parylene actually formed according to Experiment 3.

第8A圖為實驗四中設置擴散噴頭和多個擋片之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的蒸鍍流體噴流濃度之分佈圖。 Fig. 8A is a distribution diagram of the vapor deposition fluid jet concentration after the Parylene organic vapor-deposited organic monomer vapor of the diffusion head and the plurality of flaps are placed in the coating chamber in the fourth experiment.

第8B、8C圖為實驗四中設置擴散噴頭和擋片之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的流體速度分佈圖。 8B and 8C are fluid velocity distribution diagrams of the Parylene organic vapor-deposited organic monomer vapor which is provided with the diffusion nozzle and the stopper in the experiment 4 after entering the coating chamber.

第8D圖為根據實驗四而實際成膜之Parylene。 Fig. 8D is a graph of Parylene actually formed according to Experiment 4.

實施例係提出一種蒸鍍系統,且特別是有關於一種具有擴散裝置之蒸鍍系統,可降低有機材料的蒸鍍流速與改善鍍膜均勻度。相較於傳統蒸鍍方式,應用實施例之蒸鍍系統可有效改善有機材料氣相成核白化現象及達到擴散均勻化之效果,改善有機材料蒸鍍成膜的產品性質。 The embodiment proposes an evaporation system, and particularly relates to an evaporation system having a diffusion device, which can reduce the vapor deposition flow rate of the organic material and improve the uniformity of the coating. Compared with the conventional vapor deposition method, the vapor deposition system of the embodiment can effectively improve the gas phase nucleation whitening phenomenon of the organic material and achieve the effect of diffusion homogenization, and improve the product properties of the organic material vapor deposition film formation.

本揭露之蒸鍍系統可應用於有機材料的製作,例如聚對二甲苯(Parylene)蒸鍍薄膜之製作。以下係參照所附圖式詳細敘述本揭露之其中幾組實施態樣。相關的結構細節例如相關元件和空間配置等內容如下面實施例內容所述。然而,但本揭露並非僅限於所述態樣,本揭露並非顯示出所有可能的實施例。實施例中相同或類似的標號係用以標示相同或類似之部分。再者,未於 本揭露提出的其他實施態樣也可能可以應用。相關領域者可在不脫離本揭露之精神和範圍內對實施例之結構加以變化與修飾,以符合實際應用所需。而圖式係已簡化以利清楚說明實施例之內容,圖式上的尺寸比例並非按照實際產品等比例繪製。因此,說明書和圖示內容僅作敘述實施例之用,而非作為限縮本揭露保護範圍之用。 The vapor deposition system of the present disclosure can be applied to the production of organic materials, such as the production of parylene vapor deposited films. Hereinafter, several sets of embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Relevant structural details such as related components and spatial configurations are as described in the following examples. However, the disclosure is not limited to the description, and the disclosure does not show all possible embodiments. The same or similar reference numerals in the embodiments are used to designate the same or similar parts. Furthermore, not Other implementations proposed by the present disclosure may also be applicable. Variations and modifications of the structure of the embodiments can be made in the relevant embodiments without departing from the spirit and scope of the disclosure. The drawings have been simplified to clearly illustrate the contents of the embodiments, and the dimensional ratios in the drawings are not drawn to scale in terms of actual products. Therefore, the description and illustration are for illustrative purposes only and are not intended to be limiting.

第1圖係為本揭露一實施例之一蒸鍍系統之示意圖。一實施例之蒸鍍系統1係包括一蒸發裝置10、一熱裂解裝置20、一鍍膜腔體30和一擴散裝置40。其中蒸發裝置10用以蒸發一有機材料以形成一汽化氣體;熱裂解裝置20連接蒸發裝置10(例如位於蒸發裝置10後方且連接蒸發裝置10之一出口端),對進入熱裂解裝置20的汽化氣體進行加熱並持溫,以使汽化氣體熱裂解而形成有機材料單體。鍍膜腔體30連接熱裂解裝置20,有機材料單體料進入鍍膜腔體30以進行鍍膜。擴散裝置40則位於熱裂解裝置20中。如第1圖所示,擴散裝置40例如是設置於鄰近熱裂解裝置20與鍍膜腔體30之連接處。 1 is a schematic view of an evaporation system according to an embodiment of the present disclosure. The evaporation system 1 of an embodiment includes an evaporation device 10, a thermal cracking device 20, a coating chamber 30, and a diffusion device 40. The evaporation device 10 is configured to evaporate an organic material to form a vaporized gas; the thermal cracking device 20 is coupled to the evaporation device 10 (for example, located behind the evaporation device 10 and connected to an outlet end of the evaporation device 10) for vaporization into the thermal cracking device 20. The gas is heated and held at a temperature to thermally crack the vaporized gas to form an organic material monomer. The coating chamber 30 is connected to the thermal cracking device 20, and the organic material monomer material enters the coating chamber 30 for coating. The diffusion device 40 is then located in the thermal cracker 20. As shown in FIG. 1, the diffusing device 40 is disposed, for example, at a junction adjacent to the thermal cracking device 20 and the coating chamber 30.

第2圖為第1圖中圈選處之局部放大示意圖。請同時參照第1、2圖。一實施例中,熱裂解裝置包括一熱裂解室202和一加熱部204。加熱部204係包覆熱裂解室202以於熱裂解室202形成一加熱持溫區域AHeat(第1圖)。其中擴散裝置40設置於熱裂解室202內且位於加熱持溫區域AHeat(第1圖)中。擴散裝置40的設置可降低蒸鍍流速(即有機材料汽化之氣體的流速)以及增加熱裂解反應時間,使汽化之有機材料能完整裂解,如此可有效改善形成之蒸鍍薄膜的品質,例如改善有機材料氣相成核白化的 現象,以及使有機材料單體料進入鍍膜腔體30後的擴散達到更均勻化之效果。 Figure 2 is a partial enlarged view of the circled portion in Figure 1. Please refer to Figures 1 and 2 at the same time. In one embodiment, the thermal cracking unit includes a thermal cracking chamber 202 and a heating portion 204. The heating unit 204 coats the thermal cracking chamber 202 to form a heating temperature holding area A Heat in the thermal cracking chamber 202 (Fig. 1). The diffusion device 40 is disposed in the thermal cracking chamber 202 and is located in the heating temperature holding area A Heat (Fig. 1). The dispersing device 40 is arranged to reduce the vapor deposition flow rate (that is, the flow rate of the vaporized gas of the organic material) and increase the thermal cracking reaction time, so that the vaporized organic material can be completely cracked, so that the quality of the formed vapor deposited film can be effectively improved, for example, improved. The phenomenon of gas phase nucleation whitening of the organic material and the effect of diffusing the organic material monomer material into the coating cavity 30 to achieve a more uniform effect.

第3圖為根據本揭露一實施例之蒸鍍系統中一種擴散裝置之示意圖。第4圖為根據本揭露一實施例之一種擴散裝置設置於熱裂解室內之示意圖。根據本揭露,擴散裝置40包括具有複數個孔洞之一擴散噴頭402與擋片組合405,擴散裝置40亦可僅有擴散噴頭402或僅有擋片組合405。 3 is a schematic view of a diffusion device in an evaporation system according to an embodiment of the present disclosure. 4 is a schematic view of a diffusing device disposed in a thermal cracking chamber according to an embodiment of the present disclosure. According to the present disclosure, the diffusion device 40 includes a diffusion nozzle 402 and a shutter assembly 405 having a plurality of apertures. The diffusion device 40 may also have only a diffusion nozzle 402 or only a shutter assembly 405.

於一實施例中,擴散裝置40例如是包括具有複數個孔洞402h之一擴散噴頭402;如第1圖所示,擴散噴頭402例如是設置於鄰近熱裂解裝置20與鍍膜腔體30之連接處。擴散噴頭402包括一基材(base)40M具有上表面402t和下表面402b,該些孔洞402h係為貫穿基材40M之上表面402t和下表面402b的多個通孔。熱裂解後形成的有機材料單體係透過孔洞402h(通孔)而進入鍍膜腔體30。 In one embodiment, the diffusion device 40 includes, for example, a diffusion showerhead 402 having a plurality of holes 402h; as shown in FIG. 1, the diffusion showerhead 402 is disposed, for example, adjacent to the junction of the thermal cracker 20 and the coating cavity 30. . The diffusion nozzle 402 includes a base 40M having an upper surface 402t and a lower surface 402b, the holes 402h being a plurality of through holes extending through the upper surface 402t and the lower surface 402b of the substrate 40M. The organic material single system formed after the thermal cracking passes through the holes 402h (through holes) and enters the plating chamber 30.

於另一實施例中,擴散裝置40例如是一擋片組合405,包括至少兩片或兩片以上的複數個擋片,例如第3、4圖所示之擋片405a、405b、405c、405d、405e,可延長汽化之有機材料於熱裂解室202內的流動路徑,進而增加熱裂解時間。再者,位於熱裂解室202中且該些擋片405a、405b、405c、405d、405e可以等距地或是不等距地分佈,本揭露並沒有特別限制。 In another embodiment, the diffusing device 40 is, for example, a flap assembly 405 comprising at least two or more than one plurality of flaps, such as the flaps 405a, 405b, 405c, 405d shown in FIGS. 3 and 4. 405e, which can prolong the flow path of the vaporized organic material in the thermal cracking chamber 202, thereby increasing the thermal cracking time. Furthermore, the present invention is not particularly limited in the thermal cracking chamber 202 and the baffles 405a, 405b, 405c, 405d, 405e may be equally or non-equally distributed.

再一實施例中,擴散裝置40例如可包括兩者,亦即包括擴散噴頭402(具有複數個孔洞402h)與擋片組合405,擋片組合405例如是包括擋片405a、405b、405c、405d、405e)共五個擋片,但擋片組合405亦可依需求不限制五個擋片,亦可使用至少 兩個擋片。第1圖中即繪示包括擴散噴頭402與擋片組合405的擴散裝置40,其中設置擴散裝置40後擴散噴頭402係位於該些擋片(例如405a-405e)與鍍膜腔體30之間。 In another embodiment, the diffusing device 40 can include, for example, both, including a diffusion nozzle 402 (having a plurality of holes 402h) and a flap assembly 405. The shutter assembly 405 includes, for example, flaps 405a, 405b, 405c, 405d. 405e) A total of five flaps, but the flap assembly 405 can also be used without limiting five flaps, or at least Two blanks. The diffusion device 40 including the diffusion nozzle 402 and the shutter assembly 405 is illustrated in FIG. 1 , wherein the diffusion device 40 is disposed between the spacers (eg, 405a-405e) and the coating chamber 30.

一實施例中,如第1、2、4圖所示,熱裂解室202係為一圓柱型腔室,擋片例如405a-405e的形狀例如是半圓形擋片,相鄰的半圓形擋片係部分遮蔽圓柱型腔室的不同橫截面區域,例如擋片405a遮住圓柱型腔室的左半橫截面區域,下一個擋片405b遮住腔室的右半橫截面區域,再下一個擋片405c遮住腔室的左半橫截面區域...等,如此交替地遮蔽腔室的左右(或上下)兩半橫截面區域,因而使熱裂解室20形成一彎曲的流動路徑。擋片組合405如此設置可延長汽化之氣體進入熱裂解裝置202後的流動路徑,增加熱裂解反應時間。 In one embodiment, as shown in Figures 1, 2, and 4, the thermal cracking chamber 202 is a cylindrical chamber, and the flaps, for example, 405a-405e are shaped, for example, as semi-circular flaps, adjacent semicircles. The flap partially shields different cross-sectional areas of the cylindrical chamber, for example, the flap 405a covers the left half cross-sectional area of the cylindrical chamber, and the next flap 405b covers the right half cross-sectional area of the chamber, and then A flap 405c obscures the left half cross-sectional area of the chamber, etc., thus alternately shielding the left and right (or upper and lower) two-half cross-sectional areas of the chamber, thereby causing the thermal cracking chamber 20 to form a curved flow path. The flap assembly 405 is configured to extend the flow path of the vaporized gas into the thermal cracker 202, increasing the thermal cracking reaction time.

一實施例中,擴散噴頭402的尺寸設計例如是基材40M面積實質上等於熱裂解室202(ex:圓柱型腔室)的橫截面面積。當擴散裝置40置入熱裂解室202時,基材40M可設置在鍍膜腔體30之入口,使裂解後的單體只能透過孔洞402h進入鍍膜腔體30。一實施例中,半圓形擋片例如405a-405e的半徑約90%~100%的圓柱型腔室之橫截面的半徑,使絕大部分的氣體在彎曲的通道中流動。一實施例中,擋片的大小例如是:擋片一部分外緣鄰近甚至接觸熱裂解室202(ex:圓柱型腔室)之內壁,以有效延長氣體的流動路徑。 In one embodiment, the diffusion showerhead 402 is sized, for example, such that the substrate 40M has an area substantially equal to the cross-sectional area of the thermal cracking chamber 202 (ex: cylindrical chamber). When the diffusion device 40 is placed in the thermal cracking chamber 202, the substrate 40M can be disposed at the entrance of the coating chamber 30 so that the cracked monomer can enter the coating chamber 30 only through the holes 402h. In one embodiment, the semicircular baffles, such as 405a-405e, have a radius of the cross-section of the cylindrical cavity having a radius of about 90% to 100%, such that most of the gas flows in the curved passage. In one embodiment, the flap is, for example, a portion of the outer edge of the flap adjacent to or even in contact with the inner wall of the thermal cracking chamber 202 (ex: cylindrical chamber) to effectively extend the flow path of the gas.

綜合來說,設置於熱裂解室202內且位於加熱持溫區域AHeat(第1圖)中的擋片組合405可延長汽化之有機材料於熱裂解室202內的流動路徑,進而增加熱裂解時間,使汽化之有機 材料蒸氣能完整裂解。而擴散噴頭402,例如是設置於熱裂解室202與鍍膜腔體30之連接處且可設置於加熱持溫區域AHeat中,則可降低有機材料單體進入鍍膜腔體之流速。 In summary, the flap assembly 405 disposed in the thermal cracking chamber 202 and located in the heated temperature holding zone A Heat (Fig. 1) can extend the flow path of the vaporized organic material in the thermal cracking chamber 202, thereby increasing thermal cracking. Time, the vaporized organic material vapor can be completely cracked. The diffusion nozzle 402 is disposed, for example, at the junction of the thermal cracking chamber 202 and the coating chamber 30 and can be disposed in the heating temperature holding region A Heat to reduce the flow rate of the organic material monomer into the coating chamber.

以下係根據第1圖之蒸鍍系統簡述形成聚對二甲苯(Parylene)之蒸鍍薄膜的製造方法,以作為本揭露其中一組可應用態樣之說明。Parylene是一種高分子聚合物,不同於一般常見經由液體塗層方法的製備方式,Parylene是經由活潑的單體(monomer)氣體,聚合於物體表面上以完成沉積。其沉積(deposition)過程,係先將粉末狀的二甲苯的二聚物(di-para-xylylene;dimer)材料放置於蒸發裝置10中加熱汽化(例如150℃),再將汽化後氣體於熱裂解裝置20中(如熱裂解室202)透過高溫裂解(例如650℃)為對二甲苯(para-xylylene)的單體,最後單體通過擴散裝置40之擴散噴頭402導入於鍍膜腔體30中聚合沈積以形成Parylene有機膜,例如以氣相沈積(CVD)的方式沈積在一基板表面。Parylene有機膜可形成無針孔膜層,有極好的阻水氧的特性,材料無色與高透明度,具有極高的絕緣強度,抵抗生銹、腐蝕、風化等的優異性質。其他例如C型聚對二甲苯(parylene C)、D型聚對二甲苯(parylene D)、N型聚對二甲苯(parylene N)、F型聚對二甲苯(parylene F)等有機材料亦可應用本揭露之蒸鍍系統進行沈積。 Hereinafter, a method for producing a vapor-deposited film of parylene according to the vapor deposition system of Fig. 1 will be briefly described as a description of one of the applicable aspects of the present disclosure. Parylene is a high molecular polymer. Unlike the common method of preparation by liquid coating method, Parylene is polymerized on the surface of the object to complete deposition via a reactive monomer gas. In the deposition process, a di-para-xylylene dimer material is placed in the evaporation device 10 to be heated and vaporized (for example, 150 ° C), and then the vaporized gas is heated. The pyrolysis device 20 (such as the thermal cracking chamber 202) is subjected to pyrolysis (for example, 650 ° C) as a monomer of para-xylylene, and finally the monomer is introduced into the coating cavity 30 through the diffusion nozzle 402 of the diffusion device 40. Polymerization is deposited to form a Parylene organic film, for example, deposited on a substrate surface by vapor deposition (CVD). Parylene organic film can form a pinhole-free film layer, has excellent water-blocking oxygen characteristics, colorless and high transparency, high dielectric strength, and excellent resistance to rust, corrosion and weathering. Other organic materials such as C-type parylene C, parylene D, parylene N, and parylene F may also be used. The deposition is carried out using the evaporation system of the present disclosure.

實施例中係以Parylene為例提出數組相關實驗,並進行有機單體蒸氣的噴流濃度模擬分析與流體速度模擬分析,以及觀察Parylene實際成膜之產品。以下係提出其中幾組實驗及相關結果作實施例之說明。 In the examples, Parylene was used as an example to propose an array-related experiment, and the jet concentration concentration simulation analysis and fluid velocity simulation analysis of organic monomer vapor were carried out, and the product of Parylene actual film formation was observed. The following sets of experiments and related results are presented as examples of the examples.

<實驗一> <Experiment 1>

實驗一為對照組,亦即沒有設置擴散裝置於熱裂解裝置中。有機材料Parylene仍應用如第1圖所示之蒸鍍系統進行鍍膜(包括蒸發裝置10、熱裂解裝置20、及鍍膜腔體30,即為業界傳統Parylene標準鍍製過程),但沒有設置擴散裝置40。第5A圖為實驗一中無擴散裝置之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的蒸鍍流體噴流濃度之分佈圖。其中係以氬氣進行噴流濃度之模擬分析,以熱裂解室內和鍍膜腔體入口的氬氣濃度為1,進入鍍膜腔體後的濃度以相對於氬氣濃度1的比值為表示。如第5A圖所示,Parylene有機蒸鍍沒有擴散裝置,由噴流濃度之模擬分析可得知,蒸鍍源濃度高導致流速快,即蒸鍍流體(有機蒸氣)快速噴流導致擴散效果不佳。 Experiment 1 was a control group, that is, no diffusion device was provided in the thermal cracking device. The organic material Parylene is still coated with an evaporation system as shown in Fig. 1 (including the evaporation device 10, the thermal cracking device 20, and the coating chamber 30, which is the standard Parylene standard plating process in the industry), but no diffusion device is provided. 40. Fig. 5A is a distribution diagram of the vapor deposition fluid jet concentration after the Parylene organic vapor-deposited organic monomer vapor entering the coating chamber in the first experiment without the diffusion device. Among them, the argon gas is used for the simulation analysis of the jet concentration, and the argon concentration in the thermal cracking chamber and the inlet of the coating chamber is 1, and the concentration after entering the coating chamber is expressed as the ratio of the argon gas concentration 1. As shown in Fig. 5A, Parylene organic vapor deposition has no diffusion device. It can be known from the simulation analysis of the jet concentration that the high concentration of the vapor deposition source results in a fast flow rate, that is, the rapid flow of the vapor deposition fluid (organic vapor) causes poor diffusion effect.

第5B、5C圖為實驗一中無擴散裝置之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的流體速度分佈圖。第5D圖為根據實驗一而實際成膜之Parylene。由第5B、5C圖所示之流場模擬可知,有機蒸氣在沒有擴散裝置的情況下,於鍍膜腔體30內直接快速噴流,導致產生氣相成核白化之現象。其於鍍膜腔體30實際成膜之Parylene,得到白化不透明亦不均勻化之Parylene薄膜效果,如第5D圖所示。 5B and 5C are fluid velocity distribution diagrams of Parylene organic vapor-deposited organic monomer vapor entering the coating chamber without diffusion device in Experiment 1. Fig. 5D is a graph of Parylene actually formed according to Experiment 1. It can be seen from the flow field simulation shown in Figs. 5B and 5C that the organic vapor directly sprays directly in the coating chamber 30 without a diffusion device, resulting in a phenomenon of gas phase nucleation whitening. The Parylene film which is actually formed in the coating chamber 30 is obtained as a Parylene film which is whitened and opaque and non-uniform, as shown in Fig. 5D.

<實驗二> <Experiment 2>

實驗二中,係模擬設置擴散噴頭402於熱裂解裝置中對Parylene蒸鍍成膜的影響。有機材料Parylene仍應用如第1圖所示之蒸鍍系統進行鍍膜,但僅設置有複數個孔洞402h的擴散噴頭402,而沒有設置擋片組合405。第6A圖為實驗二中僅設 置擴散噴頭之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的蒸鍍流體噴流濃度之分佈圖。其中係以氬氣進行噴流濃度之模擬分析。Parylene有機蒸鍍經擴散裝置(擴散噴頭402)已經有效降低流速,由第6A圖所示噴流濃度之模擬分析可得知,擴散範圍已經比沒有經過擴散裝置的(第5A圖)擴散範圍要更廣些。 In the second experiment, the influence of the diffusion nozzle 402 on the vapor deposition of Parylene in the thermal cracking device was simulated. The organic material Parylene is still coated by the vapor deposition system shown in Fig. 1, but only the diffusion nozzle 402 having a plurality of holes 402h is provided, and the shutter assembly 405 is not provided. Figure 6A shows that only experiment 2 The distribution profile of the vapor deposition fluid spray concentration after the Parylene organic vapor-deposited organic monomer vapor of the diffusion nozzle enters the coating chamber. Among them, the simulation analysis of the jet concentration was carried out with argon gas. The Parylene organic vapor deposition diffusion device (diffusion nozzle 402) has been effective in reducing the flow rate. From the simulation analysis of the jet concentration shown in Fig. 6A, it can be seen that the diffusion range is already more than the diffusion range without the diffusion device (Fig. 5A). More extensive.

第6B、6C圖為實驗二中僅設置擴散噴頭之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的流體速度分佈圖。第6D圖為根據實驗二而實際成膜之Parylene。由第6B、6C圖所示之流場模擬可知,有機蒸氣快速噴流經過擴散裝置(擴散噴頭402)於鍍膜腔體30可有效減低流速,但是有機蒸氣進入擴散噴頭之前其流速仍偏快(i.e.在熱裂解室202中的流速仍然偏快,比實驗三的有機蒸氣在熱裂解室202中的流速更快)。其於鍍膜腔體30實際成膜之Parylene,得到透明但呈不均勻化彩虹紋之Parylene薄膜效果,如第6D圖所示。 6B and 6C are fluid velocity distribution diagrams of the Parylene organic vapor-deposited organic monomer vapor which only provided the diffusion nozzle in the experiment 2 after entering the coating chamber. Fig. 6D is a graph of Parylene actually formed according to Experiment 2. From the flow field simulation shown in Figures 6B and 6C, it can be seen that the rapid flow of organic vapor through the diffusion device (diffusion nozzle 402) in the coating chamber 30 can effectively reduce the flow rate, but the flow rate of the organic vapor before the diffusion nozzle is still fast (ie The flow rate in the thermal cracking chamber 202 is still relatively fast, faster than the flow rate of the organic vapor in the thermal cracking chamber 202 of Experiment 3. The Parylene film which is actually formed in the coating chamber 30 is obtained as a Parylene film which is transparent but has uneven rainbow pattern, as shown in Fig. 6D.

<實驗三> <Experiment 3>

實驗三中,係模擬設置擋片組合405於熱裂解裝置中對Parylene蒸鍍成膜的影響。有機材料Parylene仍應用如第1圖所示之蒸鍍系統進行鍍膜,但僅設置擋片組合405(多個擋片如405a-405e),而沒有設置有複數個孔洞402h的擴散噴頭402。第7A圖為實驗三中僅設置擋片組合之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的蒸鍍流體噴流濃度之分佈圖。其中係以氬氣進行噴流濃度之模擬分析。Parylene有機蒸鍍經擋片組合405(擋片405a-405e)已經有效降低流速,由第7A圖所示噴流濃度之模擬分析可得知,擴散範圍已經比沒有經過擴散裝置的(第5A 圖)擴散範圍要更廣些。 In Experiment 3, the effect of the set flap assembly 405 on the vapor deposition of Parylene in the thermal cracking apparatus was simulated. The organic material Parylene is still coated using an evaporation system as shown in Fig. 1, but only the shutter assembly 405 (a plurality of shutters such as 405a-405e) is provided, and the diffusion nozzle 402 provided with a plurality of holes 402h is not provided. Fig. 7A is a distribution diagram of the vapor deposition fluid jet concentration after the Parylene organic vapor-deposited organic monomer vapor is placed in the coating chamber in the third experiment. Among them, the simulation analysis of the jet concentration was carried out with argon gas. Parylene organic vapor deposition via flap assembly 405 (blocks 405a-405e) has been effective in reducing the flow rate. It can be seen from the simulation analysis of the jet concentration shown in Figure 7A that the diffusion range is already better than that without the diffusion device (5A). Figure) The spread range is broader.

第7B、7C圖為實驗三中僅設置擋片組合之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的流體速度分佈圖。第7D圖為根據實驗三而實際成膜之Parylene。由第7B、7C圖所示之流場模擬可知,有機蒸氣快速噴流經過擋片組合於鍍膜腔體30可有效減低流速,但是有機蒸氣進入鍍膜腔體30之前的流速仍偏快(i.e.有機蒸氣在熱裂解室202中的流速仍然偏快,比實驗四的有機蒸氣在熱裂解室202中的流速更快)。其於鍍膜腔體30實際成膜之Parylene,得到透明但呈不均勻化彩虹紋之Parylene薄膜效果,如第7D圖所示。再者,又以僅設置擴散噴頭(實驗二)降流速效果略優於僅擴散擋板(實驗三)降流速效果。 7B and 7C are fluid velocity distribution diagrams of the Parylene organic vapor-deposited organic monomer vapor which only sets the flap combination in the experiment 3 after entering the coating chamber. Fig. 7D is a graph of Parylene actually formed according to Experiment 3. From the flow field simulation shown in Figures 7B and 7C, it can be seen that the rapid flow of organic vapor through the baffle in the coating chamber 30 can effectively reduce the flow rate, but the flow rate of the organic vapor before entering the coating chamber 30 is still fast (ie organic vapor) The flow rate in the thermal cracking chamber 202 is still relatively fast, faster than the flow rate of the organic vapor in the thermal cracking chamber 202 of Experiment 4. The Parylene film which is actually formed in the coating chamber 30 is obtained as a Parylene film which is transparent but has uneven rainbow pattern, as shown in Fig. 7D. Furthermore, the effect of lowering the flow rate with only the diffusion nozzle (Experiment 2) is slightly better than that of the diffusion only baffle (Experiment 3).

<實驗四> <Experiment 4>

實驗四中,係模擬設置擴散噴頭402和擋片組合405於熱裂解裝置中對Parylene蒸鍍成膜的影響。有機材料Parylene係應用如第1圖所示之蒸鍍系統進行鍍膜,且擴散裝置40包括了擴散噴頭402和多個擋片如405a-405e。第8A圖為實驗四中設置擴散噴頭和多個擋片之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的蒸鍍流體噴流濃度之分佈圖。其中係以氬氣進行噴流濃度之模擬分析。Parylene有機蒸鍍經過如實驗三之擴散裝置(擴散噴頭402+擋片),擴散噴頭402使有機蒸鍍降低流速;擴散擋片如405a-405e則使有機蒸鍍於熱裂解室202中延長流動路徑,進而增加熱裂解時間,使汽化之有機蒸氣能完整裂解。 In the fourth experiment, the influence of the diffusion nozzle 402 and the shutter assembly 405 on the vapor deposition of Parylene in the thermal cracking device was simulated. The organic material Parylene is applied by an evaporation system as shown in Fig. 1, and the diffusion device 40 includes a diffusion nozzle 402 and a plurality of shutters such as 405a-405e. Fig. 8A is a distribution diagram of the vapor deposition fluid jet concentration after the Parylene organic vapor-deposited organic monomer vapor of the diffusion head and the plurality of flaps are placed in the coating chamber in the fourth experiment. Among them, the simulation analysis of the jet concentration was carried out with argon gas. Parylene organic vapor deposition is passed through a diffusion device such as Experiment 3 (diffusion nozzle 402 + baffle), diffusion nozzle 402 is used to reduce the flow rate of organic evaporation; diffusion baffles such as 405a-405e allow organic evaporation to prolong the flow in thermal cracking chamber 202 The path, which in turn increases the thermal cracking time, allows the vaporized organic vapor to be completely cracked.

如第8A圖所示噴流濃度之模擬分析可得知,實驗四之有機蒸氣於鍍膜腔體內的擴散範圍比實驗二和三的擴散範 圍要增廣許多,而比沒有經過擴散裝置的(第5A圖)擴散範圍明顯地大幅增廣。第8B、8C圖為實驗四中設置擴散噴頭和擋片之Parylene有機蒸鍍的有機單體蒸氣進入鍍膜腔體後的流體速度分佈圖。第8D圖為根據實驗四而實際成膜之Parylene。由第8B、8C圖所示之流場模擬可知,有機蒸氣快速噴流經過擴散裝置(擴散噴頭402+擋片)已大幅降低流速(ex:實驗四之有機蒸氣在熱裂解室202中的流速比實驗二和三要下降很多)。如第8D圖所示,其於鍍膜腔體30實際成膜之Parylene,可有效改善Parylene氣相成核白化現象,並得到透明均勻化之Parylene薄膜效果。 As shown in the simulation analysis of the jet concentration shown in Fig. 8A, it can be known that the diffusion range of the organic vapor in the coating chamber of Experiment 4 is larger than that of Experiments 2 and 3. The area is much wider, and the diffusion range is significantly larger than that without the diffusion device (Fig. 5A). 8B and 8C are fluid velocity distribution diagrams of the Parylene organic vapor-deposited organic monomer vapor which is provided with the diffusion nozzle and the stopper in the experiment 4 after entering the coating chamber. Fig. 8D is a graph of Parylene actually formed according to Experiment 4. From the flow field simulation shown in Figures 8B and 8C, it can be seen that the rapid flow of organic vapor through the diffusion device (diffusion nozzle 402 + baffle) has greatly reduced the flow rate (ex: the flow rate ratio of the organic vapor in the thermal cracking chamber 202 of Experiment 4 Experiments 2 and 3 are going to drop a lot). As shown in FIG. 8D, the Parylene which is actually formed in the coating chamber 30 can effectively improve the nucleation whitening phenomenon of Parylene, and obtain a transparent and uniform Parylene film effect.

綜合上述,實施例所提出之具有擴散裝置之蒸鍍系統,其設計例如是包括擴散噴頭及擴散擋片至少其中一者,且擴散裝置設置於熱裂解裝置中(ex:熱裂解室內),其中藉由擴散噴頭可使有機蒸鍍降低流速,藉由擴散擋片可使有機蒸鍍於熱裂解室中延長流動路徑。因此,實施例之擴散裝置可降低蒸鍍流速和/或提升熱裂解反應時間(使汽化之有機材料蒸氣能完整裂解)。相較於傳統蒸鍍方式,應用實施例之蒸鍍系統可有效改善有機材料氣相成核白化現象及達到擴散均勻化之效果,改善有機材料蒸鍍成膜的產品性質。例如其中一實施例之設置擴散噴頭及擴散擋片可得到透明均勻化之Parylene蒸鍍薄膜。再者,實施例所提出之擴散裝置還具有與現有蒸鍍系統的相容性高,可輕易置放於原有的熱裂解室中,設置程序簡易便利且容易更換等優點,在不過度增加製造成本的情況下就能大幅改善有機成膜的產品性質,因此本揭露之設計在應用上極富經濟價值。 In summary, the vapor deposition system with a diffusion device as set forth in the above embodiments is designed, for example, to include at least one of a diffusion showerhead and a diffusion barrier, and the diffusion device is disposed in the thermal cracking device (ex: thermal cracking chamber), wherein The organic vapor deposition can be reduced in flow rate by the diffusion nozzle, and the organic vapor deposition in the thermal cracking chamber can be extended by the diffusion barrier. Thus, the diffusion device of the embodiment can reduce the evaporation flow rate and/or increase the thermal cracking reaction time (to enable complete vaporization of the vaporized organic material vapor). Compared with the conventional vapor deposition method, the vapor deposition system of the embodiment can effectively improve the gas phase nucleation whitening phenomenon of the organic material and achieve the effect of diffusion homogenization, and improve the product properties of the organic material vapor deposition film formation. For example, in one embodiment, a diffusion nozzle and a diffusion barrier are provided to obtain a transparent and uniformized Parylene vapor-deposited film. Furthermore, the diffusion device proposed in the embodiment has high compatibility with the existing vapor deposition system, can be easily placed in the original thermal cracking chamber, and has the advantages of simple and convenient setting procedure and easy replacement, without excessive increase. In the case of manufacturing cost, the product properties of the organic film formation can be greatly improved, and thus the design of the present disclosure is extremely economical in application.

其他實施例,例如蒸發裝置、熱裂解裝置、鍍膜腔 體的已知構件在此不再贅述,而擴散裝置的相關元件可能有不同的元件設置與排列等,亦可能可以應用,係視應用時之實際需求與條件而可作適當的調整或變化。因此,說明書與圖式中所示之結構僅作說明之用,並非用以限制本揭露欲保護之範圍。另外,相關技藝者當知,實施例中構成部件的形狀和位置亦並不限於圖示所繪之態樣,亦是根據實際應用時之需求和/或製造步驟在不悖離本揭露之精神的情況下而可作相應調整。 Other embodiments, such as an evaporation device, a thermal cracking device, a coating chamber The known components of the body will not be described here, and the related components of the diffusion device may have different component arrangement and arrangement, etc., and may also be applied, and may be appropriately adjusted or changed depending on the actual needs and conditions of the application. Therefore, the structures shown in the specification and drawings are for illustrative purposes only and are not intended to limit the scope of the disclosure. In addition, it is to be understood by those skilled in the art that the shapes and positions of the components in the embodiments are not limited to those illustrated in the drawings, and the requirements and/or manufacturing steps according to actual applications are not deviated from the spirit of the disclosure. In the case of the situation can be adjusted accordingly.

綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In conclusion, the present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Claims (16)

一種蒸鍍系統,包括:一蒸發裝置,用以蒸發有機材料以形成一汽化氣體;一熱裂解裝置,連接該蒸發裝置,加熱並持溫用以熱裂解進入該熱裂解裝置的該汽化氣體,以形成有機材料單體;一鍍膜腔體,連接該熱裂解裝置,前述有機材料單體料進入該鍍膜腔體以進行鍍膜;和一擴散裝置,位於該熱裂解裝置中,該擴散裝置至少包括具有複數個孔洞之一擴散噴頭,以及至少兩個擋片分佈於該熱裂解裝置中,以延長進入該熱裂解裝置之該汽化氣體的流動路徑。 An evaporation system comprising: an evaporation device for evaporating organic material to form a vaporized gas; a thermal cracking device coupled to the evaporation device, heated and maintained to thermally crack the vaporized gas entering the thermal cracking device, Forming an organic material monomer; a plating chamber connected to the thermal cracking device, the organic material monomer material entering the coating cavity for coating; and a diffusion device located in the thermal cracking device, the diffusion device comprising at least A diffusion nozzle having a plurality of holes, and at least two flaps are distributed in the thermal cracking device to extend a flow path of the vaporized gas entering the thermal cracking device. 如申請專利範圍第1項所述之蒸鍍系統,其中該擴散噴頭設置於鄰近該熱裂解裝置與該鍍膜腔體之連接處。 The vapor deposition system of claim 1, wherein the diffusion nozzle is disposed adjacent to a junction of the thermal cracking device and the coating chamber. 如申請專利範圍第1項所述之蒸鍍系統,其中該熱裂解裝置包括:一熱裂解室;和一加熱部,包覆該熱裂解室以於該熱裂解室形成一加熱持溫區域;其中該擴散裝置設置於該熱裂解室且位於該加熱持溫區域中。 The vapor deposition system of claim 1, wherein the thermal cracking device comprises: a thermal cracking chamber; and a heating portion covering the thermal cracking chamber to form a heating temperature holding region in the thermal cracking chamber; Wherein the diffusion device is disposed in the thermal cracking chamber and is located in the heating temperature holding region. 如申請專利範圍第1項所述之蒸鍍系統,其中該擴散噴頭位於該些擋片與該鍍膜腔體之間。 The vapor deposition system of claim 1, wherein the diffusion nozzle is located between the spacers and the coating chamber. 如申請專利範圍第1項所述之蒸鍍系統,其中該熱裂解裝置包括圓柱型之一熱裂解室,該擴散噴頭包括一圓形基材,該些孔洞係為貫穿該圓形基材之上表面和下表面的多個通孔,該圓形 基材面積等於該熱裂解室之橫截面面積。 The vapor deposition system of claim 1, wherein the thermal cracking device comprises a cylindrical one type thermal cracking chamber, the diffusion head comprising a circular substrate, the holes being through the circular substrate a plurality of through holes on the upper surface and the lower surface, the circle The area of the substrate is equal to the cross-sectional area of the thermal cracking chamber. 如申請專利範圍第5項所述之蒸鍍系統,其中該些擋片係分別遮蔽該熱裂解室之橫截面的部分面積,使該熱裂解室形成一彎曲的流動路徑。 The vapor deposition system of claim 5, wherein the baffles respectively shield a portion of the cross-section of the thermal cracking chamber such that the thermal cracking chamber forms a curved flow path. 如申請專利範圍第5項所述之蒸鍍系統,其中該些擋片為半圓形檔片,該些半圓形擋片之半徑為90%~100%的該熱裂解室之橫截面的半徑。 The vapor deposition system of claim 5, wherein the baffles are semi-circular baffles having a radius of 90% to 100% of a cross section of the thermal cracking chamber. radius. 如申請專利範圍第1項所述之蒸鍍系統,其中該擴散噴頭包括一基材(base)具有上表面和下表面,該些孔洞係為貫穿該基材之該上表面和該下表面的多個通孔。 The vapor deposition system of claim 1, wherein the diffusion nozzle comprises a base having an upper surface and a lower surface, the holes being through the upper surface and the lower surface of the substrate Multiple through holes. 如申請專利範圍第1項所述之蒸鍍系統,其中前述有機材料包括聚對二甲苯(parylene)。 The vapor deposition system of claim 1, wherein the aforementioned organic material comprises parylene. 如申請專利範圍第1項所述之蒸鍍系統,其中前述有機材料包括C型聚對二甲苯(parylene C)、D型聚對二甲苯(parylene D)、N型聚對二甲苯(parylene N)、F型聚對二甲苯(parylene F)。 The vapor deposition system according to claim 1, wherein the organic material comprises parylene C, parylene D, and parylene N. ), F-type parylene F (parylene F). 一種蒸鍍系統,包括:一蒸發裝置,用以蒸發有機材料以形成一汽化氣體;一熱裂解裝置,連接該蒸發裝置,加熱並持溫用以熱裂解進入該熱裂解裝置的該汽化氣體,以形成有機材料單體;一鍍膜腔體,連接該熱裂解裝置,前述有機材料單體進入該鍍膜腔體以進行鍍膜;和一擴散裝置,位於該熱裂解裝置中,該擴散裝置包括具有複數個孔洞之一擴散噴頭與一擋片組合,該擋片組合包括至少兩個擋片分佈於該熱裂解裝置中。 An evaporation system comprising: an evaporation device for evaporating organic material to form a vaporized gas; a thermal cracking device coupled to the evaporation device, heated and maintained to thermally crack the vaporized gas entering the thermal cracking device, Forming an organic material monomer; a plating chamber connected to the thermal cracking device, the organic material monomer entering the coating cavity for coating; and a diffusion device located in the thermal cracking device, the diffusion device comprising a plurality One of the holes is a diffusion nozzle that is combined with a baffle that includes at least two baffles distributed in the thermal cracker. 如申請專利範圍第11項所述之蒸鍍系統,其中該擴散裝置包括:該擴散噴頭,設置於鄰近該熱裂解裝置與該鍍膜腔體之連接處。 The vapor deposition system of claim 11, wherein the diffusion device comprises: the diffusion nozzle disposed adjacent to the junction of the thermal cracking device and the coating chamber. 如申請專利範圍第12項所述之蒸鍍系統,其中該擴散裝置之該擴散噴頭位於該些擋片與該鍍膜腔體之間。 The vapor deposition system of claim 12, wherein the diffusion nozzle of the diffusion device is located between the shutter and the coating chamber. 如申請專利範圍第13項所述之蒸鍍系統,其中該擴散噴頭包括一基材(base)具有上表面和下表面,該些孔洞係為貫穿該基材之該上表面和該下表面的多個通孔。 The vapor deposition system of claim 13, wherein the diffusion nozzle comprises a base having an upper surface and a lower surface, the holes being through the upper surface and the lower surface of the substrate Multiple through holes. 如申請專利範圍第11項所述之蒸鍍系統,其中該熱裂解裝置包括:一熱裂解室;和一加熱部,包覆該熱裂解室以於該熱裂解室形成一加熱持溫區域;其中該擴散裝置設置於該熱裂解室且位於該加熱持溫區域中。 The vapor deposition system of claim 11, wherein the thermal cracking device comprises: a thermal cracking chamber; and a heating portion covering the thermal cracking chamber to form a heating and holding temperature region in the thermal cracking chamber; Wherein the diffusion device is disposed in the thermal cracking chamber and is located in the heating temperature holding region. 如申請專利範圍第11項所述之蒸鍍系統,其中前述有機材料包括C型聚對二甲苯(parylene C)、D型聚對二甲苯(parylene D)、N型聚對二甲苯(parylene N)、F型聚對二甲苯(parylene F)。 The vapor deposition system of claim 11, wherein the organic material comprises parylene C, parylene D, and parylene N. ), F-type parylene F (parylene F).
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JP2004199904A (en) * 2002-12-16 2004-07-15 Fujikura Ltd Low insertion force connector
CN103031519A (en) * 2011-10-06 2013-04-10 财团法人工业技术研究院 Vapor deposition apparatus and method for forming organic thin film

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004199904A (en) * 2002-12-16 2004-07-15 Fujikura Ltd Low insertion force connector
CN103031519A (en) * 2011-10-06 2013-04-10 财团法人工业技术研究院 Vapor deposition apparatus and method for forming organic thin film

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